id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ajst-15580	Xiao, Jiazhan	Advancements in the Preparation and Application Research of TMDCs	2023	5	.pdf	application/pdf	3740	262	47	Transferring p-type WS2 at room temperature onto n-type GaN produced high-quality p-n junctions, with a leakage current density of 29.6μA/cm2 at -1V, exhibiting superior performance compared to directly grown WS2/GaN heterojunctions, significantly expanding the application of WS2 thin films in electronic and optoelectronic devices. 116 Understanding and optimizing the deposition conditions for the growth mechanism have ultimately led to the realization of WS2 films with larger particle sizes.	cache/ajst-15580.pdf	txt/ajst-15580.txt