id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ajst-25629	Ji, Mei	Study on Preparation of CrSi Thin Film Resistance by Magnetron Sputtering 	2024	3	.pdf	application/pdf	1932	92	46	The sputtering argon pressure and the volume flow into the process chamber (argon gas) are in a positive ratio, so the influence of substrate temperature increase on the temperature coefficient of CrSi film resistance is similar to that of substrate temperature increase. As can be seen from Fig.4, with the continuous increase of nitrogen volume flow rate in reactive sputtering, the temperature coefficient of CrSi film resistance decreases continuously.	cache/ajst-25629.pdf	txt/ajst-25629.txt