id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ajst-2992	Guo, Jianing	Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs	2022	8	.pdf	application/pdf	4345	212	57	Test circuit analysis In this paper, the test circuit of SiC MOSFET device in parallel as shown in Fig.1 is established. Influence of device temperature difference Due to the asymmetric heat dissipation condition and asymmetric aging of the device, the junction temperature of the device will be different during operation.	cache/ajst-2992.pdf	txt/ajst-2992.txt