id	sid	tid	token	lemma	pos
ajst-24974	1	1	academic	academic	ADJ
ajst-24974	1	2	journal	journal	NOUN
ajst-24974	1	3	of	of	ADP
ajst-24974	1	4	science	science	NOUN
ajst-24974	1	5	and	and	CCONJ
ajst-24974	1	6	technology	technology	NOUN
ajst-24974	1	7	issn	issn	NOUN
ajst-24974	1	8	:	:	PUNCT
ajst-24974	1	9	2771	2771	NUM
ajst-24974	1	10	-	-	SYM
ajst-24974	1	11	3032	3032	NUM
ajst-24974	1	12	|	|	NOUN
ajst-24974	1	13	vol	vol	NOUN
ajst-24974	1	14	.	.	PROPN
ajst-24974	2	1	12	12	NUM
ajst-24974	2	2	,	,	PUNCT
ajst-24974	2	3	no	no	INTJ
ajst-24974	2	4	.	.	NOUN
ajst-24974	2	5	1	1	NUM
ajst-24974	2	6	,	,	PUNCT
ajst-24974	2	7	2024	2024	NUM
ajst-24974	2	8	168	168	NUM
ajst-24974	2	9	study	study	NOUN
ajst-24974	2	10	of	of	ADP
ajst-24974	2	11	soi‐mos	soi‐mos	PROPN
ajst-24974	2	12	self‐heating	self‐heate	VERB
ajst-24974	2	13	effect	effect	NOUN
ajst-24974	2	14	suppression	suppression	NOUN
ajst-24974	2	15	method	method	NOUN
ajst-24974	2	16	in	in	ADP
ajst-24974	2	17	cmos	cmos	PROPN
ajst-24974	2	18	process	process	NOUN
ajst-24974	2	19	yang	yang	PROPN
ajst-24974	2	20	liu	liu	PROPN
ajst-24974	3	1	*	*	PUNCT
ajst-24974	3	2	tianjin	tianjin	PROPN
ajst-24974	3	3	sino	sino	ADJ
ajst-24974	3	4	-	-	PUNCT
ajst-24974	3	5	german	german	ADJ
ajst-24974	3	6	university	university	NOUN
ajst-24974	3	7	of	of	ADP
ajst-24974	3	8	applied	apply	VERB
ajst-24974	3	9	technology	technology	NOUN
ajst-24974	3	10	,	,	PUNCT
ajst-24974	3	11	tianjin	tianjin	PROPN
ajst-24974	3	12	,	,	PUNCT
ajst-24974	3	13	300350	300350	NUM
ajst-24974	3	14	,	,	PUNCT
ajst-24974	3	15	china	china	PROPN
ajst-24974	3	16	*	*	PUNCT
ajst-24974	3	17	corresponding	correspond	VERB
ajst-24974	3	18	author	author	NOUN
ajst-24974	3	19	email	email	NOUN
ajst-24974	3	20	:	:	PUNCT
ajst-24974	3	21	liu581199@gmail.com	liu581199@gmail.com	X
ajst-24974	4	1	abstract	abstract	ADJ
ajst-24974	4	2	:	:	PUNCT
ajst-24974	4	3	silicon	silicon	NOUN
ajst-24974	4	4	on	on	ADP
ajst-24974	4	5	insulator	insulator	NOUN
ajst-24974	4	6	metal	metal	NOUN
ajst-24974	4	7	oxide	oxide	NOUN
ajst-24974	4	8	semiconductor	semiconductor	NOUN
ajst-24974	4	9	(	(	PUNCT
ajst-24974	4	10	soi	soi	NOUN
ajst-24974	4	11	-	-	PUNCT
ajst-24974	4	12	mos	mos	NOUN
ajst-24974	4	13	)	)	PUNCT
ajst-24974	4	14	technology	technology	NOUN
ajst-24974	4	15	,	,	PUNCT
ajst-24974	4	16	as	as	ADP
ajst-24974	4	17	a	a	DET
ajst-24974	4	18	new	new	ADJ
ajst-24974	4	19	fabrication	fabrication	NOUN
ajst-24974	4	20	method	method	NOUN
ajst-24974	4	21	,	,	PUNCT
ajst-24974	4	22	has	have	VERB
ajst-24974	4	23	good	good	ADJ
ajst-24974	4	24	thermal	thermal	ADJ
ajst-24974	4	25	characteristics	characteristic	NOUN
ajst-24974	4	26	compared	compare	VERB
ajst-24974	4	27	with	with	ADP
ajst-24974	4	28	the	the	DET
ajst-24974	4	29	traditional	traditional	ADJ
ajst-24974	4	30	cmos	cmos	PROPN
ajst-24974	4	31	technology	technology	NOUN
ajst-24974	4	32	,	,	PUNCT
ajst-24974	4	33	which	which	PRON
ajst-24974	4	34	can	can	AUX
ajst-24974	4	35	effectively	effectively	ADV
ajst-24974	4	36	reduce	reduce	VERB
ajst-24974	4	37	the	the	DET
ajst-24974	4	38	self	self	NOUN
ajst-24974	4	39	-	-	PUNCT
ajst-24974	4	40	heating	heating	NOUN
ajst-24974	4	41	effect	effect	NOUN
ajst-24974	4	42	of	of	ADP
ajst-24974	4	43	the	the	DET
ajst-24974	4	44	device	device	NOUN
ajst-24974	4	45	.	.	PUNCT
ajst-24974	5	1	however	however	ADV
ajst-24974	5	2	,	,	PUNCT
ajst-24974	5	3	with	with	ADP
ajst-24974	5	4	the	the	DET
ajst-24974	5	5	continuous	continuous	ADJ
ajst-24974	5	6	development	development	NOUN
ajst-24974	5	7	of	of	ADP
ajst-24974	5	8	nanotechnology	nanotechnology	NOUN
ajst-24974	5	9	,	,	PUNCT
ajst-24974	5	10	the	the	DET
ajst-24974	5	11	feature	feature	NOUN
ajst-24974	5	12	size	size	NOUN
ajst-24974	5	13	of	of	ADP
ajst-24974	5	14	cmos	cmos	PROPN
ajst-24974	5	15	integrated	integrate	VERB
ajst-24974	5	16	circuits	circuit	NOUN
ajst-24974	5	17	is	be	AUX
ajst-24974	5	18	gradually	gradually	ADV
ajst-24974	5	19	reduced	reduce	VERB
ajst-24974	5	20	,	,	PUNCT
ajst-24974	5	21	and	and	CCONJ
ajst-24974	5	22	the	the	DET
ajst-24974	5	23	thickness	thickness	NOUN
ajst-24974	5	24	of	of	ADP
ajst-24974	5	25	silicon	silicon	NOUN
ajst-24974	5	26	on	on	ADP
ajst-24974	5	27	the	the	DET
ajst-24974	5	28	insulating	insulating	NOUN
ajst-24974	5	29	layer	layer	NOUN
ajst-24974	5	30	is	be	AUX
ajst-24974	5	31	gradually	gradually	ADV
ajst-24974	5	32	thinned	thin	VERB
ajst-24974	5	33	,	,	PUNCT
ajst-24974	5	34	which	which	PRON
ajst-24974	5	35	makes	make	VERB
ajst-24974	5	36	the	the	DET
ajst-24974	5	37	"	"	PUNCT
ajst-24974	5	38	self	self	NOUN
ajst-24974	5	39	-	-	PUNCT
ajst-24974	5	40	heating	heating	NOUN
ajst-24974	5	41	effect	effect	NOUN
ajst-24974	5	42	"	"	PUNCT
ajst-24974	5	43	increase	increase	NOUN
ajst-24974	5	44	.	.	PUNCT
ajst-24974	6	1	the	the	DET
ajst-24974	6	2	passage	passage	NOUN
ajst-24974	6	3	of	of	ADP
ajst-24974	6	4	current	current	NOUN
ajst-24974	6	5	through	through	ADP
ajst-24974	6	6	a	a	DET
ajst-24974	6	7	conductor	conductor	NOUN
ajst-24974	6	8	may	may	AUX
ajst-24974	6	9	result	result	VERB
ajst-24974	6	10	in	in	ADP
ajst-24974	6	11	a	a	DET
ajst-24974	6	12	localized	localize	VERB
ajst-24974	6	13	temperature	temperature	NOUN
ajst-24974	6	14	increase	increase	NOUN
ajst-24974	6	15	due	due	ADP
ajst-24974	6	16	to	to	ADP
ajst-24974	6	17	the	the	DET
ajst-24974	6	18	material	material	NOUN
ajst-24974	6	19	impedance	impedance	NOUN
ajst-24974	6	20	and	and	CCONJ
ajst-24974	6	21	internal	internal	ADJ
ajst-24974	6	22	resistance	resistance	NOUN
ajst-24974	6	23	of	of	ADP
ajst-24974	6	24	the	the	DET
ajst-24974	6	25	conductor	conductor	NOUN
ajst-24974	6	26	caused	cause	VERB
ajst-24974	6	27	by	by	ADP
ajst-24974	6	28	the	the	DET
ajst-24974	6	29	current	current	NOUN
ajst-24974	6	30	.	.	PUNCT
ajst-24974	7	1	this	this	DET
ajst-24974	7	2	temperature	temperature	NOUN
ajst-24974	7	3	increase	increase	NOUN
ajst-24974	7	4	may	may	AUX
ajst-24974	7	5	affect	affect	VERB
ajst-24974	7	6	the	the	DET
ajst-24974	7	7	performance	performance	NOUN
ajst-24974	7	8	and	and	CCONJ
ajst-24974	7	9	stability	stability	NOUN
ajst-24974	7	10	of	of	ADP
ajst-24974	7	11	the	the	DET
ajst-24974	7	12	device	device	NOUN
ajst-24974	7	13	.	.	PUNCT
ajst-24974	8	1	therefore	therefore	ADV
ajst-24974	8	2	,	,	PUNCT
ajst-24974	8	3	it	it	PRON
ajst-24974	8	4	is	be	AUX
ajst-24974	8	5	important	important	ADJ
ajst-24974	8	6	to	to	PART
ajst-24974	8	7	take	take	VERB
ajst-24974	8	8	measures	measure	NOUN
ajst-24974	8	9	to	to	PART
ajst-24974	8	10	protect	protect	VERB
ajst-24974	8	11	or	or	CCONJ
ajst-24974	8	12	regulate	regulate	VERB
ajst-24974	8	13	this	this	DET
ajst-24974	8	14	"	"	PUNCT
ajst-24974	8	15	self	self	NOUN
ajst-24974	8	16	-	-	PUNCT
ajst-24974	8	17	heating	heating	NOUN
ajst-24974	8	18	effect	effect	NOUN
ajst-24974	8	19	"	"	PUNCT
ajst-24974	8	20	in	in	ADP
ajst-24974	8	21	the	the	DET
ajst-24974	8	22	design	design	NOUN
ajst-24974	8	23	.	.	PUNCT
ajst-24974	9	1	in	in	ADP
ajst-24974	9	2	this	this	DET
ajst-24974	9	3	paper	paper	NOUN
ajst-24974	9	4	,	,	PUNCT
ajst-24974	9	5	through	through	ADP
ajst-24974	9	6	the	the	DET
ajst-24974	9	7	analysis	analysis	NOUN
ajst-24974	9	8	of	of	ADP
ajst-24974	9	9	the	the	DET
ajst-24974	9	10	thermal	thermal	ADJ
ajst-24974	9	11	characteristics	characteristic	NOUN
ajst-24974	9	12	of	of	ADP
ajst-24974	9	13	soi	soi	ADJ
ajst-24974	9	14	-	-	PUNCT
ajst-24974	9	15	mos	mos	NOUN
ajst-24974	9	16	devices	device	NOUN
ajst-24974	9	17	,	,	PUNCT
ajst-24974	9	18	this	this	DET
ajst-24974	9	19	article	article	NOUN
ajst-24974	9	20	has	have	AUX
ajst-24974	9	21	studied	study	VERB
ajst-24974	9	22	the	the	DET
ajst-24974	9	23	methods	method	NOUN
ajst-24974	9	24	of	of	ADP
ajst-24974	9	25	suppressing	suppress	VERB
ajst-24974	9	26	the	the	DET
ajst-24974	9	27	self	self	NOUN
ajst-24974	9	28	-	-	PUNCT
ajst-24974	9	29	heating	heating	NOUN
ajst-24974	9	30	effect	effect	NOUN
ajst-24974	9	31	of	of	ADP
ajst-24974	9	32	soi	soi	ADJ
ajst-24974	9	33	-	-	PUNCT
ajst-24974	9	34	mos	mos	NOUN
ajst-24974	9	35	devices	device	NOUN
ajst-24974	9	36	based	base	VERB
ajst-24974	9	37	on	on	ADP
ajst-24974	9	38	thermal	thermal	ADJ
ajst-24974	9	39	interface	interface	NOUN
ajst-24974	9	40	materials	material	NOUN
ajst-24974	9	41	,	,	PUNCT
ajst-24974	9	42	and	and	CCONJ
ajst-24974	9	43	the	the	DET
ajst-24974	9	44	experimental	experimental	ADJ
ajst-24974	9	45	results	result	NOUN
ajst-24974	9	46	show	show	VERB
ajst-24974	9	47	that	that	SCONJ
ajst-24974	9	48	these	these	DET
ajst-24974	9	49	methods	method	NOUN
ajst-24974	9	50	can	can	AUX
ajst-24974	9	51	effectively	effectively	ADV
ajst-24974	9	52	improve	improve	VERB
ajst-24974	9	53	the	the	DET
ajst-24974	9	54	thermal	thermal	ADJ
ajst-24974	9	55	conductivity	conductivity	NOUN
ajst-24974	9	56	of	of	ADP
ajst-24974	9	57	the	the	DET
ajst-24974	9	58	devices	device	NOUN
ajst-24974	9	59	,	,	PUNCT
ajst-24974	9	60	thus	thus	ADV
ajst-24974	9	61	suppressing	suppress	VERB
ajst-24974	9	62	the	the	DET
ajst-24974	9	63	self	self	NOUN
ajst-24974	9	64	-	-	PUNCT
ajst-24974	9	65	heating	heating	NOUN
ajst-24974	9	66	effect	effect	NOUN
ajst-24974	9	67	of	of	ADP
ajst-24974	9	68	the	the	DET
ajst-24974	9	69	devices	device	NOUN
ajst-24974	9	70	.	.	PUNCT
ajst-24974	10	1	keywords	keyword	NOUN
ajst-24974	10	2	:	:	PUNCT
ajst-24974	10	3	soi	soi	ADJ
ajst-24974	10	4	-	-	PUNCT
ajst-24974	10	5	mos	mos	NOUN
ajst-24974	10	6	device	device	NOUN
ajst-24974	10	7	;	;	PUNCT
ajst-24974	10	8	thermal	thermal	ADJ
ajst-24974	10	9	interface	interface	NOUN
ajst-24974	10	10	material	material	NOUN
ajst-24974	10	11	;	;	PUNCT
ajst-24974	10	12	self	self	NOUN
ajst-24974	10	13	-	-	PUNCT
ajst-24974	10	14	heating	heating	NOUN
ajst-24974	10	15	effect	effect	NOUN
ajst-24974	10	16	;	;	PUNCT
ajst-24974	10	17	heat	heat	NOUN
ajst-24974	10	18	dissipation	dissipation	NOUN
ajst-24974	10	19	technology	technology	NOUN
ajst-24974	10	20	.	.	PUNCT
ajst-24974	11	1	1	1	X
ajst-24974	11	2	.	.	X
ajst-24974	11	3	introduction	introduction	NOUN
ajst-24974	11	4	with	with	ADP
ajst-24974	11	5	the	the	DET
ajst-24974	11	6	rapid	rapid	ADJ
ajst-24974	11	7	development	development	NOUN
ajst-24974	11	8	of	of	ADP
ajst-24974	11	9	integrated	integrated	ADJ
ajst-24974	11	10	circuit	circuit	NOUN
ajst-24974	11	11	technology	technology	NOUN
ajst-24974	11	12	,	,	PUNCT
ajst-24974	11	13	especially	especially	ADV
ajst-24974	11	14	the	the	DET
ajst-24974	11	15	wide	wide	ADJ
ajst-24974	11	16	application	application	NOUN
ajst-24974	11	17	of	of	ADP
ajst-24974	11	18	cmos	cmos	ADJ
ajst-24974	11	19	process	process	NOUN
ajst-24974	11	20	technology	technology	NOUN
ajst-24974	11	21	,	,	PUNCT
ajst-24974	11	22	the	the	DET
ajst-24974	11	23	performance	performance	NOUN
ajst-24974	11	24	of	of	ADP
ajst-24974	11	25	semiconductor	semiconductor	NOUN
ajst-24974	11	26	devices	device	NOUN
ajst-24974	11	27	continues	continue	VERB
ajst-24974	11	28	to	to	PART
ajst-24974	11	29	improve	improve	VERB
ajst-24974	11	30	,	,	PUNCT
ajst-24974	11	31	but	but	CCONJ
ajst-24974	11	32	the	the	DET
ajst-24974	11	33	accompanying	accompanying	ADJ
ajst-24974	11	34	thermal	thermal	ADJ
ajst-24974	11	35	management	management	NOUN
ajst-24974	11	36	problems	problem	NOUN
ajst-24974	11	37	are	be	AUX
ajst-24974	11	38	also	also	ADV
ajst-24974	11	39	increasingly	increasingly	ADV
ajst-24974	11	40	prominent	prominent	ADJ
ajst-24974	11	41	.	.	PUNCT
ajst-24974	12	1	in	in	ADP
ajst-24974	12	2	the	the	DET
ajst-24974	12	3	cmos	cmos	NOUN
ajst-24974	12	4	process	process	NOUN
ajst-24974	12	5	,	,	PUNCT
ajst-24974	12	6	soi	soi	ADJ
ajst-24974	12	7	-	-	PUNCT
ajst-24974	12	8	mos	mos	NOUN
ajst-24974	12	9	devices	device	NOUN
ajst-24974	12	10	are	be	AUX
ajst-24974	12	11	widely	widely	ADV
ajst-24974	12	12	used	use	VERB
ajst-24974	12	13	because	because	SCONJ
ajst-24974	12	14	of	of	ADP
ajst-24974	12	15	their	their	PRON
ajst-24974	12	16	excellent	excellent	ADJ
ajst-24974	12	17	performance	performance	NOUN
ajst-24974	12	18	and	and	CCONJ
ajst-24974	12	19	reliability	reliability	NOUN
ajst-24974	12	20	.	.	PUNCT
ajst-24974	13	1	however	however	ADV
ajst-24974	13	2	,	,	PUNCT
ajst-24974	13	3	with	with	ADP
ajst-24974	13	4	the	the	DET
ajst-24974	13	5	reduction	reduction	NOUN
ajst-24974	13	6	of	of	ADP
ajst-24974	13	7	device	device	NOUN
ajst-24974	13	8	size	size	NOUN
ajst-24974	13	9	and	and	CCONJ
ajst-24974	13	10	the	the	DET
ajst-24974	13	11	improvement	improvement	NOUN
ajst-24974	13	12	of	of	ADP
ajst-24974	13	13	integration	integration	NOUN
ajst-24974	13	14	,	,	PUNCT
ajst-24974	13	15	the	the	DET
ajst-24974	13	16	impact	impact	NOUN
ajst-24974	13	17	of	of	ADP
ajst-24974	13	18	self	self	NOUN
ajst-24974	13	19	-	-	PUNCT
ajst-24974	13	20	heating	heating	NOUN
ajst-24974	13	21	effect	effect	NOUN
ajst-24974	13	22	on	on	ADP
ajst-24974	13	23	the	the	DET
ajst-24974	13	24	performance	performance	NOUN
ajst-24974	13	25	of	of	ADP
ajst-24974	13	26	the	the	DET
ajst-24974	13	27	device	device	NOUN
ajst-24974	13	28	becomes	become	VERB
ajst-24974	13	29	more	more	ADV
ajst-24974	13	30	and	and	CCONJ
ajst-24974	13	31	more	more	ADV
ajst-24974	13	32	obvious	obvious	ADJ
ajst-24974	13	33	,	,	PUNCT
ajst-24974	13	34	which	which	PRON
ajst-24974	13	35	poses	pose	VERB
ajst-24974	13	36	a	a	DET
ajst-24974	13	37	serious	serious	ADJ
ajst-24974	13	38	threat	threat	NOUN
ajst-24974	13	39	to	to	ADP
ajst-24974	13	40	the	the	DET
ajst-24974	13	41	stability	stability	NOUN
ajst-24974	13	42	and	and	CCONJ
ajst-24974	13	43	lifetime	lifetime	NOUN
ajst-24974	13	44	of	of	ADP
ajst-24974	13	45	the	the	DET
ajst-24974	13	46	device	device	NOUN
ajst-24974	13	47	.	.	PUNCT
ajst-24974	14	1	the	the	DET
ajst-24974	14	2	self	self	NOUN
ajst-24974	14	3	-	-	PUNCT
ajst-24974	14	4	heating	heating	NOUN
ajst-24974	14	5	effect	effect	NOUN
ajst-24974	14	6	refers	refer	VERB
ajst-24974	14	7	to	to	ADP
ajst-24974	14	8	the	the	DET
ajst-24974	14	9	phenomenon	phenomenon	NOUN
ajst-24974	14	10	that	that	SCONJ
ajst-24974	14	11	the	the	DET
ajst-24974	14	12	temperature	temperature	NOUN
ajst-24974	14	13	of	of	ADP
ajst-24974	14	14	a	a	DET
ajst-24974	14	15	device	device	NOUN
ajst-24974	14	16	rises	rise	VERB
ajst-24974	14	17	due	due	ADJ
ajst-24974	14	18	to	to	ADP
ajst-24974	14	19	the	the	DET
ajst-24974	14	20	passage	passage	NOUN
ajst-24974	14	21	of	of	ADP
ajst-24974	14	22	current	current	ADJ
ajst-24974	14	23	during	during	ADP
ajst-24974	14	24	operation	operation	NOUN
ajst-24974	14	25	,	,	PUNCT
ajst-24974	14	26	which	which	PRON
ajst-24974	14	27	in	in	ADP
ajst-24974	14	28	turn	turn	NOUN
ajst-24974	14	29	affects	affect	VERB
ajst-24974	14	30	the	the	DET
ajst-24974	14	31	performance	performance	NOUN
ajst-24974	14	32	of	of	ADP
ajst-24974	14	33	the	the	DET
ajst-24974	14	34	device	device	NOUN
ajst-24974	14	35	.	.	PUNCT
ajst-24974	15	1	for	for	ADP
ajst-24974	15	2	soi	soi	ADJ
ajst-24974	15	3	-	-	PUNCT
ajst-24974	15	4	mos	mos	NOUN
ajst-24974	15	5	devices	device	NOUN
ajst-24974	15	6	,	,	PUNCT
ajst-24974	15	7	the	the	DET
ajst-24974	15	8	self	self	NOUN
ajst-24974	15	9	-	-	PUNCT
ajst-24974	15	10	heating	heating	NOUN
ajst-24974	15	11	effect	effect	NOUN
ajst-24974	15	12	is	be	AUX
ajst-24974	15	13	mainly	mainly	ADV
ajst-24974	15	14	manifested	manifest	VERB
ajst-24974	15	15	in	in	ADP
ajst-24974	15	16	the	the	DET
ajst-24974	15	17	change	change	NOUN
ajst-24974	15	18	of	of	ADP
ajst-24974	15	19	threshold	threshold	NOUN
ajst-24974	15	20	voltage	voltage	NOUN
ajst-24974	15	21	,	,	PUNCT
ajst-24974	15	22	the	the	DET
ajst-24974	15	23	reduction	reduction	NOUN
ajst-24974	15	24	of	of	ADP
ajst-24974	15	25	sub	sub	ADJ
ajst-24974	15	26	-	-	ADJ
ajst-24974	15	27	threshold	threshold	ADJ
ajst-24974	15	28	slope	slope	NOUN
ajst-24974	15	29	,	,	PUNCT
ajst-24974	15	30	and	and	CCONJ
ajst-24974	15	31	the	the	DET
ajst-24974	15	32	reduction	reduction	NOUN
ajst-24974	15	33	of	of	ADP
ajst-24974	15	34	carrier	carrier	NOUN
ajst-24974	15	35	mobility	mobility	NOUN
ajst-24974	15	36	.	.	PUNCT
ajst-24974	16	1	these	these	DET
ajst-24974	16	2	effects	effect	NOUN
ajst-24974	16	3	can	can	AUX
ajst-24974	16	4	cause	cause	VERB
ajst-24974	16	5	device	device	NOUN
ajst-24974	16	6	performance	performance	NOUN
ajst-24974	16	7	degradation	degradation	NOUN
ajst-24974	16	8	,	,	PUNCT
ajst-24974	16	9	and	and	CCONJ
ajst-24974	16	10	even	even	ADV
ajst-24974	16	11	cause	cause	VERB
ajst-24974	16	12	device	device	NOUN
ajst-24974	16	13	failure	failure	NOUN
ajst-24974	16	14	.	.	PUNCT
ajst-24974	17	1	therefore	therefore	ADV
ajst-24974	17	2	,	,	PUNCT
ajst-24974	17	3	to	to	PART
ajst-24974	17	4	improve	improve	VERB
ajst-24974	17	5	the	the	DET
ajst-24974	17	6	performance	performance	NOUN
ajst-24974	17	7	and	and	CCONJ
ajst-24974	17	8	reliability	reliability	NOUN
ajst-24974	17	9	of	of	ADP
ajst-24974	17	10	soi	soi	ADJ
ajst-24974	17	11	-	-	PUNCT
ajst-24974	17	12	mos	mos	NOUN
ajst-24974	17	13	devices	device	NOUN
ajst-24974	17	14	,	,	PUNCT
ajst-24974	17	15	it	it	PRON
ajst-24974	17	16	is	be	AUX
ajst-24974	17	17	of	of	ADP
ajst-24974	17	18	great	great	ADJ
ajst-24974	17	19	significance	significance	NOUN
ajst-24974	17	20	to	to	PART
ajst-24974	17	21	explore	explore	VERB
ajst-24974	17	22	effective	effective	ADJ
ajst-24974	17	23	methods	method	NOUN
ajst-24974	17	24	to	to	PART
ajst-24974	17	25	suppress	suppress	VERB
ajst-24974	17	26	the	the	DET
ajst-24974	17	27	self	self	NOUN
ajst-24974	17	28	-	-	PUNCT
ajst-24974	17	29	heating	heating	NOUN
ajst-24974	17	30	effect	effect	NOUN
ajst-24974	17	31	.	.	PUNCT
ajst-24974	18	1	at	at	ADP
ajst-24974	18	2	present	present	ADJ
ajst-24974	18	3	,	,	PUNCT
ajst-24974	18	4	a	a	DET
ajst-24974	18	5	variety	variety	NOUN
ajst-24974	18	6	of	of	ADP
ajst-24974	18	7	methods	method	NOUN
ajst-24974	18	8	to	to	PART
ajst-24974	18	9	inhibit	inhibit	VERB
ajst-24974	18	10	the	the	DET
ajst-24974	18	11	self	self	NOUN
ajst-24974	18	12	-	-	PUNCT
ajst-24974	18	13	heating	heating	NOUN
ajst-24974	18	14	effect	effect	NOUN
ajst-24974	18	15	have	have	AUX
ajst-24974	18	16	been	be	AUX
ajst-24974	18	17	proposed	propose	VERB
ajst-24974	18	18	by	by	ADP
ajst-24974	18	19	scholars	scholar	NOUN
ajst-24974	18	20	at	at	ADP
ajst-24974	18	21	home	home	NOUN
ajst-24974	18	22	and	and	CCONJ
ajst-24974	18	23	abroad	abroad	ADV
ajst-24974	18	24	,	,	PUNCT
ajst-24974	18	25	including	include	VERB
ajst-24974	18	26	the	the	DET
ajst-24974	18	27	improvement	improvement	NOUN
ajst-24974	18	28	of	of	ADP
ajst-24974	18	29	the	the	DET
ajst-24974	18	30	device	device	NOUN
ajst-24974	18	31	structure	structure	NOUN
ajst-24974	18	32	design	design	NOUN
ajst-24974	18	33	,	,	PUNCT
ajst-24974	18	34	the	the	DET
ajst-24974	18	35	use	use	NOUN
ajst-24974	18	36	of	of	ADP
ajst-24974	18	37	high	high	ADJ
ajst-24974	18	38	thermal	thermal	ADJ
ajst-24974	18	39	conductivity	conductivity	NOUN
ajst-24974	18	40	materials	material	NOUN
ajst-24974	18	41	as	as	ADP
ajst-24974	18	42	the	the	DET
ajst-24974	18	43	thermal	thermal	ADJ
ajst-24974	18	44	interface	interface	NOUN
ajst-24974	18	45	layer	layer	NOUN
ajst-24974	18	46	,	,	PUNCT
ajst-24974	18	47	and	and	CCONJ
ajst-24974	18	48	the	the	DET
ajst-24974	18	49	development	development	NOUN
ajst-24974	18	50	of	of	ADP
ajst-24974	18	51	a	a	DET
ajst-24974	18	52	new	new	ADJ
ajst-24974	18	53	type	type	NOUN
ajst-24974	18	54	of	of	ADP
ajst-24974	18	55	heat	heat	NOUN
ajst-24974	18	56	dissipation	dissipation	NOUN
ajst-24974	18	57	technology	technology	NOUN
ajst-24974	18	58	.	.	PUNCT
ajst-24974	19	1	these	these	DET
ajst-24974	19	2	methods	method	NOUN
ajst-24974	19	3	often	often	ADV
ajst-24974	19	4	have	have	VERB
ajst-24974	19	5	various	various	ADJ
ajst-24974	19	6	limitations	limitation	NOUN
ajst-24974	19	7	such	such	ADJ
ajst-24974	19	8	as	as	ADP
ajst-24974	19	9	high	high	ADJ
ajst-24974	19	10	cost	cost	NOUN
ajst-24974	19	11	,	,	PUNCT
ajst-24974	19	12	complex	complex	ADJ
ajst-24974	19	13	processing	processing	NOUN
ajst-24974	19	14	or	or	CCONJ
ajst-24974	19	15	large	large	ADJ
ajst-24974	19	16	impact	impact	NOUN
ajst-24974	19	17	on	on	ADP
ajst-24974	19	18	device	device	NOUN
ajst-24974	19	19	performance	performance	NOUN
ajst-24974	19	20	.	.	PUNCT
ajst-24974	20	1	in	in	ADP
ajst-24974	20	2	view	view	NOUN
ajst-24974	20	3	of	of	ADP
ajst-24974	20	4	the	the	DET
ajst-24974	20	5	above	above	ADJ
ajst-24974	20	6	,	,	PUNCT
ajst-24974	20	7	this	this	DET
ajst-24974	20	8	paper	paper	NOUN
ajst-24974	20	9	aims	aim	VERB
ajst-24974	20	10	to	to	PART
ajst-24974	20	11	conduct	conduct	VERB
ajst-24974	20	12	an	an	DET
ajst-24974	20	13	in	in	ADP
ajst-24974	20	14	-	-	PUNCT
ajst-24974	20	15	depth	depth	NOUN
ajst-24974	20	16	study	study	NOUN
ajst-24974	20	17	on	on	ADP
ajst-24974	20	18	the	the	DET
ajst-24974	20	19	self	self	NOUN
ajst-24974	20	20	-	-	PUNCT
ajst-24974	20	21	heating	heating	NOUN
ajst-24974	20	22	effect	effect	NOUN
ajst-24974	20	23	of	of	ADP
ajst-24974	20	24	soi	soi	ADJ
ajst-24974	20	25	-	-	PUNCT
ajst-24974	20	26	mos	mos	NOUN
ajst-24974	20	27	devices	device	NOUN
ajst-24974	20	28	in	in	ADP
ajst-24974	20	29	cmos	cmos	NOUN
ajst-24974	20	30	process	process	NOUN
ajst-24974	20	31	and	and	CCONJ
ajst-24974	20	32	discuss	discuss	VERB
ajst-24974	20	33	the	the	DET
ajst-24974	20	34	effective	effective	ADJ
ajst-24974	20	35	suppression	suppression	NOUN
ajst-24974	20	36	strategies	strategy	NOUN
ajst-24974	20	37	.	.	PUNCT
ajst-24974	21	1	by	by	ADP
ajst-24974	21	2	establishing	establish	VERB
ajst-24974	21	3	an	an	DET
ajst-24974	21	4	accurate	accurate	ADJ
ajst-24974	21	5	selfheating	selfheating	NOUN
ajst-24974	21	6	effect	effect	NOUN
ajst-24974	21	7	model	model	NOUN
ajst-24974	21	8	,	,	PUNCT
ajst-24974	21	9	analysing	analyse	VERB
ajst-24974	21	10	the	the	DET
ajst-24974	21	11	effects	effect	NOUN
ajst-24974	21	12	of	of	ADP
ajst-24974	21	13	different	different	ADJ
ajst-24974	21	14	thermal	thermal	ADJ
ajst-24974	21	15	conductivity	conductivity	NOUN
ajst-24974	21	16	enhancement	enhancement	NOUN
ajst-24974	21	17	techniques	technique	NOUN
ajst-24974	21	18	on	on	ADP
ajst-24974	21	19	device	device	NOUN
ajst-24974	21	20	performance	performance	NOUN
ajst-24974	21	21	,	,	PUNCT
ajst-24974	21	22	and	and	CCONJ
ajst-24974	21	23	studying	study	VERB
ajst-24974	21	24	the	the	DET
ajst-24974	21	25	self	self	NOUN
ajst-24974	21	26	-	-	PUNCT
ajst-24974	21	27	heating	heating	NOUN
ajst-24974	21	28	effect	effect	NOUN
ajst-24974	21	29	suppression	suppression	NOUN
ajst-24974	21	30	method	method	NOUN
ajst-24974	21	31	based	base	VERB
ajst-24974	21	32	on	on	ADP
ajst-24974	21	33	thermal	thermal	ADJ
ajst-24974	21	34	interface	interface	NOUN
ajst-24974	21	35	materials	material	NOUN
ajst-24974	21	36	,	,	PUNCT
ajst-24974	21	37	we	we	PRON
ajst-24974	21	38	expect	expect	VERB
ajst-24974	21	39	to	to	PART
ajst-24974	21	40	provide	provide	VERB
ajst-24974	21	41	a	a	DET
ajst-24974	21	42	new	new	ADJ
ajst-24974	21	43	method	method	NOUN
ajst-24974	21	44	to	to	PART
ajst-24974	21	45	solve	solve	VERB
ajst-24974	21	46	the	the	DET
ajst-24974	21	47	self	self	NOUN
ajst-24974	21	48	-	-	PUNCT
ajst-24974	21	49	heating	heating	NOUN
ajst-24974	21	50	effect	effect	NOUN
ajst-24974	21	51	problem	problem	NOUN
ajst-24974	21	52	of	of	ADP
ajst-24974	21	53	soi	soi	ADJ
ajst-24974	21	54	-	-	PUNCT
ajst-24974	21	55	mos	mos	NOUN
ajst-24974	21	56	devices	device	NOUN
ajst-24974	21	57	.	.	PUNCT
ajst-24974	22	1	2	2	X
ajst-24974	22	2	.	.	X
ajst-24974	22	3	domestic	domestic	ADJ
ajst-24974	22	4	and	and	CCONJ
ajst-24974	22	5	international	international	ADJ
ajst-24974	22	6	research	research	NOUN
ajst-24974	22	7	status	status	NOUN
ajst-24974	22	8	soi	soi	ADJ
ajst-24974	22	9	-	-	PUNCT
ajst-24974	22	10	mos	mos	NOUN
ajst-24974	22	11	devices	device	NOUN
ajst-24974	22	12	are	be	AUX
ajst-24974	22	13	widely	widely	ADV
ajst-24974	22	14	used	use	VERB
ajst-24974	22	15	in	in	ADP
ajst-24974	22	16	high	high	ADJ
ajst-24974	22	17	performance	performance	NOUN
ajst-24974	22	18	integrated	integrate	VERB
ajst-24974	22	19	circuits	circuit	NOUN
ajst-24974	22	20	due	due	ADP
ajst-24974	22	21	to	to	ADP
ajst-24974	22	22	their	their	PRON
ajst-24974	22	23	excellent	excellent	ADJ
ajst-24974	22	24	electrical	electrical	ADJ
ajst-24974	22	25	characteristics	characteristic	NOUN
ajst-24974	22	26	and	and	CCONJ
ajst-24974	22	27	low	low	ADJ
ajst-24974	22	28	power	power	NOUN
ajst-24974	22	29	consumption	consumption	NOUN
ajst-24974	22	30	.	.	PUNCT
ajst-24974	23	1	as	as	SCONJ
ajst-24974	23	2	the	the	DET
ajst-24974	23	3	device	device	NOUN
ajst-24974	23	4	size	size	NOUN
ajst-24974	23	5	shrinks	shrink	VERB
ajst-24974	23	6	with	with	ADP
ajst-24974	23	7	the	the	DET
ajst-24974	23	8	advancement	advancement	NOUN
ajst-24974	23	9	of	of	ADP
ajst-24974	23	10	the	the	DET
ajst-24974	23	11	process	process	NOUN
ajst-24974	23	12	node	node	NOUN
ajst-24974	23	13	,	,	PUNCT
ajst-24974	23	14	the	the	DET
ajst-24974	23	15	performance	performance	NOUN
ajst-24974	23	16	of	of	ADP
ajst-24974	23	17	the	the	DET
ajst-24974	23	18	device	device	NOUN
ajst-24974	23	19	is	be	AUX
ajst-24974	23	20	more	more	ADV
ajst-24974	23	21	and	and	CCONJ
ajst-24974	23	22	more	more	ADV
ajst-24974	23	23	affected	affect	VERB
ajst-24974	23	24	by	by	ADP
ajst-24974	23	25	the	the	DET
ajst-24974	23	26	self	self	NOUN
ajst-24974	23	27	-	-	PUNCT
ajst-24974	23	28	heating	heating	NOUN
ajst-24974	23	29	effect	effect	NOUN
ajst-24974	23	30	,	,	PUNCT
ajst-24974	23	31	which	which	PRON
ajst-24974	23	32	not	not	PART
ajst-24974	23	33	only	only	ADV
ajst-24974	23	34	causes	cause	VERB
ajst-24974	23	35	the	the	DET
ajst-24974	23	36	degradation	degradation	NOUN
ajst-24974	23	37	of	of	ADP
ajst-24974	23	38	the	the	DET
ajst-24974	23	39	device	device	NOUN
ajst-24974	23	40	performance	performance	NOUN
ajst-24974	23	41	,	,	PUNCT
ajst-24974	23	42	but	but	CCONJ
ajst-24974	23	43	also	also	ADV
ajst-24974	23	44	may	may	AUX
ajst-24974	23	45	cause	cause	VERB
ajst-24974	23	46	the	the	DET
ajst-24974	23	47	device	device	NOUN
ajst-24974	23	48	failure	failure	NOUN
ajst-24974	23	49	.	.	PUNCT
ajst-24974	24	1	the	the	DET
ajst-24974	24	2	self	self	NOUN
ajst-24974	24	3	-	-	PUNCT
ajst-24974	24	4	heating	heating	NOUN
ajst-24974	24	5	effect	effect	NOUN
ajst-24974	24	6	not	not	PART
ajst-24974	24	7	only	only	ADV
ajst-24974	24	8	causes	cause	VERB
ajst-24974	24	9	the	the	DET
ajst-24974	24	10	degradation	degradation	NOUN
ajst-24974	24	11	of	of	ADP
ajst-24974	24	12	device	device	NOUN
ajst-24974	24	13	performance	performance	NOUN
ajst-24974	24	14	,	,	PUNCT
ajst-24974	24	15	but	but	CCONJ
ajst-24974	24	16	also	also	ADV
ajst-24974	24	17	may	may	AUX
ajst-24974	24	18	result	result	VERB
ajst-24974	24	19	in	in	ADP
ajst-24974	24	20	device	device	NOUN
ajst-24974	24	21	failure	failure	NOUN
ajst-24974	24	22	.	.	PUNCT
ajst-24974	25	1	the	the	DET
ajst-24974	25	2	suppression	suppression	NOUN
ajst-24974	25	3	of	of	ADP
ajst-24974	25	4	the	the	DET
ajst-24974	25	5	self	self	NOUN
ajst-24974	25	6	-	-	PUNCT
ajst-24974	25	7	heating	heating	NOUN
ajst-24974	25	8	effect	effect	NOUN
ajst-24974	25	9	in	in	ADP
ajst-24974	25	10	soi	soi	ADJ
ajst-24974	25	11	-	-	PUNCT
ajst-24974	25	12	mos	mos	NOUN
ajst-24974	25	13	devices	device	NOUN
ajst-24974	25	14	has	have	AUX
ajst-24974	25	15	become	become	VERB
ajst-24974	25	16	a	a	DET
ajst-24974	25	17	hot	hot	ADJ
ajst-24974	25	18	research	research	NOUN
ajst-24974	25	19	topic[1	topic[1	X
ajst-24974	25	20	]	]	PUNCT
ajst-24974	25	21	.	.	PUNCT
ajst-24974	26	1	international	international	ADJ
ajst-24974	26	2	research	research	NOUN
ajst-24974	26	3	on	on	ADP
ajst-24974	26	4	the	the	DET
ajst-24974	26	5	self	self	NOUN
ajst-24974	26	6	-	-	PUNCT
ajst-24974	26	7	heating	heating	NOUN
ajst-24974	26	8	effect	effect	NOUN
ajst-24974	26	9	of	of	ADP
ajst-24974	26	10	soimos	soimos	ADJ
ajst-24974	26	11	devices	device	NOUN
ajst-24974	26	12	mainly	mainly	ADV
ajst-24974	26	13	focuses	focus	VERB
ajst-24974	26	14	on	on	ADP
ajst-24974	26	15	theoretical	theoretical	ADJ
ajst-24974	26	16	analysis	analysis	NOUN
ajst-24974	26	17	and	and	CCONJ
ajst-24974	26	18	experimental	experimental	ADJ
ajst-24974	26	19	verification	verification	NOUN
ajst-24974	26	20	.	.	PUNCT
ajst-24974	27	1	some	some	DET
ajst-24974	27	2	research	research	NOUN
ajst-24974	27	3	teams	team	NOUN
ajst-24974	27	4	have	have	AUX
ajst-24974	27	5	predicted	predict	VERB
ajst-24974	27	6	the	the	DET
ajst-24974	27	7	impact	impact	NOUN
ajst-24974	27	8	of	of	ADP
ajst-24974	27	9	self	self	NOUN
ajst-24974	27	10	-	-	PUNCT
ajst-24974	27	11	heating	heating	NOUN
ajst-24974	27	12	effect	effect	NOUN
ajst-24974	27	13	on	on	ADP
ajst-24974	27	14	device	device	NOUN
ajst-24974	27	15	performance	performance	NOUN
ajst-24974	27	16	by	by	ADP
ajst-24974	27	17	building	build	VERB
ajst-24974	27	18	complex	complex	ADJ
ajst-24974	27	19	physical	physical	ADJ
ajst-24974	27	20	models	model	NOUN
ajst-24974	27	21	that	that	PRON
ajst-24974	27	22	take	take	VERB
ajst-24974	27	23	into	into	ADP
ajst-24974	27	24	account	account	NOUN
ajst-24974	27	25	a	a	DET
ajst-24974	27	26	variety	variety	NOUN
ajst-24974	27	27	of	of	ADP
ajst-24974	27	28	factors	factor	NOUN
ajst-24974	27	29	,	,	PUNCT
ajst-24974	27	30	such	such	ADJ
ajst-24974	27	31	as	as	ADP
ajst-24974	27	32	device	device	NOUN
ajst-24974	27	33	structure	structure	NOUN
ajst-24974	27	34	,	,	PUNCT
ajst-24974	27	35	operating	operating	NOUN
ajst-24974	27	36	conditions	condition	NOUN
ajst-24974	27	37	,	,	PUNCT
ajst-24974	27	38	and	and	CCONJ
ajst-24974	27	39	so	so	ADV
ajst-24974	27	40	on	on	ADV
ajst-24974	27	41	.	.	PUNCT
ajst-24974	28	1	meanwhile	meanwhile	ADV
ajst-24974	28	2	,	,	PUNCT
ajst-24974	28	3	some	some	DET
ajst-24974	28	4	researchers	researcher	NOUN
ajst-24974	28	5	have	have	AUX
ajst-24974	28	6	also	also	ADV
ajst-24974	28	7	utilised	utilise	VERB
ajst-24974	28	8	advanced	advanced	ADJ
ajst-24974	28	9	fabrication	fabrication	NOUN
ajst-24974	28	10	techniques	technique	NOUN
ajst-24974	28	11	and	and	CCONJ
ajst-24974	28	12	materials	material	NOUN
ajst-24974	28	13	,	,	PUNCT
ajst-24974	28	14	such	such	ADJ
ajst-24974	28	15	as	as	ADP
ajst-24974	28	16	ultra	ultra	ADJ
ajst-24974	28	17	-	-	ADJ
ajst-24974	28	18	thin	thin	ADJ
ajst-24974	28	19	silicon	silicon	NOUN
ajst-24974	28	20	layers	layer	NOUN
ajst-24974	28	21	and	and	CCONJ
ajst-24974	28	22	localised	localised	ADJ
ajst-24974	28	23	heat	heat	NOUN
ajst-24974	28	24	dissipation	dissipation	NOUN
ajst-24974	28	25	techniques	technique	NOUN
ajst-24974	28	26	,	,	PUNCT
ajst-24974	28	27	in	in	ADP
ajst-24974	28	28	order	order	NOUN
ajst-24974	28	29	to	to	PART
ajst-24974	28	30	improve	improve	VERB
ajst-24974	28	31	the	the	DET
ajst-24974	28	32	thermal	thermal	ADJ
ajst-24974	28	33	conductivity	conductivity	NOUN
ajst-24974	28	34	of	of	ADP
ajst-24974	28	35	the	the	DET
ajst-24974	28	36	devices	device	NOUN
ajst-24974	28	37	and	and	CCONJ
ajst-24974	28	38	thus	thus	ADV
ajst-24974	28	39	reduce	reduce	VERB
ajst-24974	28	40	the	the	DET
ajst-24974	28	41	impact	impact	NOUN
ajst-24974	28	42	of	of	ADP
ajst-24974	28	43	selfheating	selfheating	NOUN
ajst-24974	28	44	effects	effect	NOUN
ajst-24974	28	45	.	.	PUNCT
ajst-24974	29	1	in	in	ADP
ajst-24974	29	2	china	china	PROPN
ajst-24974	29	3	,	,	PUNCT
ajst-24974	29	4	the	the	DET
ajst-24974	29	5	research	research	NOUN
ajst-24974	29	6	on	on	ADP
ajst-24974	29	7	the	the	DET
ajst-24974	29	8	self	self	NOUN
ajst-24974	29	9	-	-	PUNCT
ajst-24974	29	10	heating	heating	NOUN
ajst-24974	29	11	effect	effect	NOUN
ajst-24974	29	12	of	of	ADP
ajst-24974	29	13	soimos	soimos	PROPN
ajst-24974	29	14	devices	device	NOUN
ajst-24974	29	15	has	have	AUX
ajst-24974	29	16	been	be	AUX
ajst-24974	29	17	gradually	gradually	ADV
ajst-24974	29	18	deepened	deepen	VERB
ajst-24974	29	19	with	with	ADP
ajst-24974	29	20	the	the	DET
ajst-24974	29	21	rapid	rapid	ADJ
ajst-24974	29	22	development	development	NOUN
ajst-24974	29	23	of	of	ADP
ajst-24974	29	24	semiconductor	semiconductor	NOUN
ajst-24974	29	25	technology	technology	NOUN
ajst-24974	29	26	.	.	PUNCT
ajst-24974	30	1	several	several	ADJ
ajst-24974	30	2	universities	university	NOUN
ajst-24974	30	3	and	and	CCONJ
ajst-24974	30	4	research	research	NOUN
ajst-24974	30	5	institutes	institute	NOUN
ajst-24974	30	6	in	in	ADP
ajst-24974	30	7	china	china	PROPN
ajst-24974	30	8	have	have	AUX
ajst-24974	30	9	carried	carry	VERB
ajst-24974	30	10	out	out	ADP
ajst-24974	30	11	relevant	relevant	ADJ
ajst-24974	30	12	basic	basic	ADJ
ajst-24974	30	13	and	and	CCONJ
ajst-24974	30	14	applied	applied	ADJ
ajst-24974	30	15	research	research	NOUN
ajst-24974	30	16	.	.	PUNCT
ajst-24974	31	1	a	a	DET
ajst-24974	31	2	research	research	NOUN
ajst-24974	31	3	team	team	NOUN
ajst-24974	31	4	has	have	AUX
ajst-24974	31	5	studied	study	VERB
ajst-24974	31	6	the	the	DET
ajst-24974	31	7	mechanism	mechanism	NOUN
ajst-24974	31	8	of	of	ADP
ajst-24974	31	9	self	self	NOUN
ajst-24974	31	10	-	-	PUNCT
ajst-24974	31	11	heating	heating	NOUN
ajst-24974	31	12	effect	effect	NOUN
ajst-24974	31	13	generated	generate	VERB
ajst-24974	31	14	by	by	ADP
ajst-24974	31	15	traditional	traditional	ADJ
ajst-24974	31	16	mos	mos	PROPN
ajst-24974	31	17	devices	device	NOUN
ajst-24974	31	18	.	.	PUNCT
ajst-24974	32	1	an	an	DET
ajst-24974	32	2	in	in	ADP
ajst-24974	32	3	-	-	PUNCT
ajst-24974	32	4	depth	depth	NOUN
ajst-24974	32	5	discussion	discussion	NOUN
ajst-24974	32	6	was	be	AUX
ajst-24974	32	7	conducted	conduct	VERB
ajst-24974	32	8	and	and	CCONJ
ajst-24974	32	9	the	the	DET
ajst-24974	32	10	research	research	NOUN
ajst-24974	32	11	results	result	NOUN
ajst-24974	32	12	were	be	AUX
ajst-24974	32	13	applied	apply	VERB
ajst-24974	32	14	in	in	ADP
ajst-24974	32	15	soi	soi	ADJ
ajst-24974	32	16	-	-	PUNCT
ajst-24974	32	17	mos	mos	ADJ
ajst-24974	32	18	169	169	NUM
ajst-24974	32	19	devices	device	NOUN
ajst-24974	32	20	.	.	PUNCT
ajst-24974	33	1	domestic	domestic	ADJ
ajst-24974	33	2	researchers	researcher	NOUN
ajst-24974	33	3	have	have	AUX
ajst-24974	33	4	also	also	ADV
ajst-24974	33	5	made	make	VERB
ajst-24974	33	6	some	some	DET
ajst-24974	33	7	progress	progress	NOUN
ajst-24974	33	8	in	in	ADP
ajst-24974	33	9	the	the	DET
ajst-24974	33	10	research	research	NOUN
ajst-24974	33	11	of	of	ADP
ajst-24974	33	12	thermal	thermal	ADJ
ajst-24974	33	13	interface	interface	NOUN
ajst-24974	33	14	materials	material	NOUN
ajst-24974	33	15	such	such	ADJ
ajst-24974	33	16	as	as	ADP
ajst-24974	33	17	metal	metal	NOUN
ajst-24974	33	18	thermal	thermal	ADJ
ajst-24974	33	19	interface	interface	NOUN
ajst-24974	33	20	materials	material	NOUN
ajst-24974	33	21	and	and	CCONJ
ajst-24974	33	22	thermal	thermal	ADJ
ajst-24974	33	23	conductive	conductive	ADJ
ajst-24974	33	24	polymers	polymer	NOUN
ajst-24974	33	25	application	application	NOUN
ajst-24974	33	26	research	research	NOUN
ajst-24974	33	27	,	,	PUNCT
ajst-24974	33	28	which	which	PRON
ajst-24974	33	29	are	be	AUX
ajst-24974	33	30	designed	design	VERB
ajst-24974	33	31	to	to	PART
ajst-24974	33	32	improve	improve	VERB
ajst-24974	33	33	the	the	DET
ajst-24974	33	34	thermal	thermal	ADJ
ajst-24974	33	35	management	management	NOUN
ajst-24974	33	36	capability	capability	NOUN
ajst-24974	33	37	of	of	ADP
ajst-24974	33	38	devices	device	NOUN
ajst-24974	33	39	and	and	CCONJ
ajst-24974	33	40	reduce	reduce	VERB
ajst-24974	33	41	the	the	DET
ajst-24974	33	42	self	self	NOUN
ajst-24974	33	43	-	-	PUNCT
ajst-24974	33	44	heating	heating	NOUN
ajst-24974	33	45	effect	effect	NOUN
ajst-24974	33	46	[	[	X
ajst-24974	33	47	2	2	NUM
ajst-24974	33	48	]	]	PUNCT
ajst-24974	33	49	.	.	PUNCT
ajst-24974	34	1	3	3	X
ajst-24974	34	2	.	.	X
ajst-24974	34	3	soi	soi	ADJ
ajst-24974	34	4	-	-	PUNCT
ajst-24974	34	5	mos	mos	NOUN
ajst-24974	34	6	device	device	NOUN
ajst-24974	34	7	self	self	NOUN
ajst-24974	34	8	-	-	PUNCT
ajst-24974	34	9	heating	heating	NOUN
ajst-24974	34	10	effect	effect	NOUN
ajst-24974	34	11	modelling	model	VERB
ajst-24974	34	12	3.1	3.1	NUM
ajst-24974	34	13	.	.	PUNCT
ajst-24974	35	1	self	self	NOUN
ajst-24974	35	2	-	-	PUNCT
ajst-24974	35	3	heating	heating	NOUN
ajst-24974	35	4	effect	effect	NOUN
ajst-24974	35	5	of	of	ADP
ajst-24974	35	6	conventional	conventional	ADJ
ajst-24974	35	7	mos	mos	PROPN
ajst-24974	35	8	devices	device	NOUN
ajst-24974	35	9	analysis	analysis	NOUN
ajst-24974	35	10	for	for	ADP
ajst-24974	35	11	soi	soi	ADJ
ajst-24974	35	12	-	-	PUNCT
ajst-24974	35	13	mos	mos	NOUN
ajst-24974	35	14	self	self	NOUN
ajst-24974	35	15	-	-	PUNCT
ajst-24974	35	16	heating	heating	NOUN
ajst-24974	35	17	effect	effect	NOUN
ajst-24974	35	18	research	research	NOUN
ajst-24974	35	19	has	have	VERB
ajst-24974	35	20	a	a	DET
ajst-24974	35	21	certain	certain	ADJ
ajst-24974	35	22	foundation	foundation	NOUN
ajst-24974	35	23	,	,	PUNCT
ajst-24974	35	24	but	but	CCONJ
ajst-24974	35	25	the	the	DET
ajst-24974	35	26	traditional	traditional	ADJ
ajst-24974	35	27	solution	solution	NOUN
ajst-24974	35	28	to	to	ADP
ajst-24974	35	29	the	the	DET
ajst-24974	35	30	self	self	NOUN
ajst-24974	35	31	-	-	PUNCT
ajst-24974	35	32	heating	heating	NOUN
ajst-24974	35	33	effect	effect	NOUN
ajst-24974	35	34	is	be	AUX
ajst-24974	35	35	usually	usually	ADV
ajst-24974	35	36	to	to	PART
ajst-24974	35	37	change	change	VERB
ajst-24974	35	38	the	the	DET
ajst-24974	35	39	material	material	NOUN
ajst-24974	35	40	or	or	CCONJ
ajst-24974	35	41	thickness	thickness	NOUN
ajst-24974	35	42	of	of	ADP
ajst-24974	35	43	the	the	DET
ajst-24974	35	44	sio2	sio2	PROPN
ajst-24974	35	45	buried	bury	VERB
ajst-24974	35	46	layer	layer	NOUN
ajst-24974	35	47	,	,	PUNCT
ajst-24974	35	48	this	this	DET
ajst-24974	35	49	method	method	NOUN
ajst-24974	35	50	has	have	VERB
ajst-24974	35	51	a	a	DET
ajst-24974	35	52	certain	certain	ADJ
ajst-24974	35	53	effect	effect	NOUN
ajst-24974	35	54	on	on	ADP
ajst-24974	35	55	improving	improve	VERB
ajst-24974	35	56	the	the	DET
ajst-24974	35	57	self	self	NOUN
ajst-24974	35	58	-	-	PUNCT
ajst-24974	35	59	heating	heating	NOUN
ajst-24974	35	60	effect	effect	NOUN
ajst-24974	35	61	of	of	ADP
ajst-24974	35	62	soi	soi	ADJ
ajst-24974	35	63	-	-	PUNCT
ajst-24974	35	64	mos	mos	NOUN
ajst-24974	35	65	,	,	PUNCT
ajst-24974	35	66	the	the	DET
ajst-24974	35	67	following	follow	VERB
ajst-24974	35	68	figure	figure	NOUN
ajst-24974	35	69	shows	show	VERB
ajst-24974	35	70	us	we	PRON
ajst-24974	35	71	the	the	DET
ajst-24974	35	72	material	material	NOUN
ajst-24974	35	73	properties	property	NOUN
ajst-24974	35	74	of	of	ADP
ajst-24974	35	75	si	si	X
ajst-24974	35	76	,	,	PUNCT
ajst-24974	35	77	sio2	sio2	PROPN
ajst-24974	35	78	,	,	PUNCT
ajst-24974	35	79	si	si	PROPN
ajst-24974	35	80	o34	o34	PROPN
ajst-24974	35	81	,	,	PUNCT
ajst-24974	35	82	aln	aln	PROPN
ajst-24974	35	83	at	at	ADP
ajst-24974	35	84	27	27	NUM
ajst-24974	35	85	℃	℃	PROPN
ajst-24974	35	86	[	[	X
ajst-24974	35	87	3	3	X
ajst-24974	35	88	]	]	PUNCT
ajst-24974	35	89	,	,	PUNCT
ajst-24974	35	90	respectively	respectively	ADV
ajst-24974	35	91	.	.	PUNCT
ajst-24974	36	1	fig	fig	NOUN
ajst-24974	36	2	1	1	NUM
ajst-24974	36	3	.	.	PUNCT
ajst-24974	37	1	the	the	DET
ajst-24974	37	2	material	material	NOUN
ajst-24974	37	3	characters	character	NOUN
ajst-24974	37	4	of	of	ADP
ajst-24974	37	5	si	si	PROPN
ajst-24974	37	6	,	,	PUNCT
ajst-24974	37	7	sio2	sio2	PROPN
ajst-24974	37	8	,	,	PUNCT
ajst-24974	37	9	si3n4	si3n4	PROPN
ajst-24974	37	10	and	and	CCONJ
ajst-24974	37	11	ain	ain	PROPN
ajst-24974	37	12	at	at	ADP
ajst-24974	37	13	27	27	NUM
ajst-24974	37	14	°	°	NOUN
ajst-24974	37	15	c	c	NOUN
ajst-24974	37	16	it	it	PRON
ajst-24974	37	17	can	can	AUX
ajst-24974	37	18	be	be	AUX
ajst-24974	37	19	seen	see	VERB
ajst-24974	37	20	from	from	ADP
ajst-24974	37	21	the	the	DET
ajst-24974	37	22	figure	figure	NOUN
ajst-24974	37	23	that	that	SCONJ
ajst-24974	37	24	aln	aln	PROPN
ajst-24974	37	25	has	have	VERB
ajst-24974	37	26	high	high	ADJ
ajst-24974	37	27	thermal	thermal	ADJ
ajst-24974	37	28	conductivity	conductivity	NOUN
ajst-24974	37	29	,	,	PUNCT
ajst-24974	37	30	large	large	ADJ
ajst-24974	37	31	dielectric	dielectric	ADJ
ajst-24974	37	32	constant	constant	ADJ
ajst-24974	37	33	,	,	PUNCT
ajst-24974	37	34	large	large	ADJ
ajst-24974	37	35	resistivity	resistivity	NOUN
ajst-24974	37	36	,	,	PUNCT
ajst-24974	37	37	and	and	CCONJ
ajst-24974	37	38	high	high	ADJ
ajst-24974	37	39	breakdown	breakdown	ADJ
ajst-24974	37	40	field	field	NOUN
ajst-24974	37	41	strength	strength	NOUN
ajst-24974	37	42	,	,	PUNCT
ajst-24974	37	43	so	so	ADV
ajst-24974	37	44	theoretically	theoretically	ADV
ajst-24974	37	45	the	the	DET
ajst-24974	37	46	selfheating	selfheating	NOUN
ajst-24974	37	47	effect	effect	NOUN
ajst-24974	37	48	in	in	ADP
ajst-24974	37	49	the	the	DET
ajst-24974	37	50	device	device	NOUN
ajst-24974	37	51	channel	channel	NOUN
ajst-24974	37	52	can	can	AUX
ajst-24974	37	53	be	be	AUX
ajst-24974	37	54	effectively	effectively	ADV
ajst-24974	37	55	reduced	reduce	VERB
ajst-24974	37	56	by	by	ADP
ajst-24974	37	57	aln	aln	PROPN
ajst-24974	37	58	as	as	ADP
ajst-24974	37	59	the	the	DET
ajst-24974	37	60	buried	bury	VERB
ajst-24974	37	61	layer	layer	NOUN
ajst-24974	37	62	of	of	ADP
ajst-24974	37	63	soi	soi	NOUN
ajst-24974	37	64	.	.	PUNCT
ajst-24974	38	1	when	when	SCONJ
ajst-24974	38	2	designing	design	VERB
ajst-24974	38	3	and	and	CCONJ
ajst-24974	38	4	fabricating	fabricate	VERB
ajst-24974	38	5	ultra	ultra	ADJ
ajst-24974	38	6	-	-	ADJ
ajst-24974	38	7	thin	thin	ADJ
ajst-24974	38	8	silicon	silicon	NOUN
ajst-24974	38	9	layers	layer	NOUN
ajst-24974	38	10	,	,	PUNCT
ajst-24974	38	11	a	a	DET
ajst-24974	38	12	variety	variety	NOUN
ajst-24974	38	13	of	of	ADP
ajst-24974	38	14	factors	factor	NOUN
ajst-24974	38	15	need	need	VERB
ajst-24974	38	16	to	to	PART
ajst-24974	38	17	be	be	AUX
ajst-24974	38	18	considered	consider	VERB
ajst-24974	38	19	,	,	PUNCT
ajst-24974	38	20	including	include	VERB
ajst-24974	38	21	material	material	NOUN
ajst-24974	38	22	selection	selection	NOUN
ajst-24974	38	23	,	,	PUNCT
ajst-24974	38	24	processing	processing	NOUN
ajst-24974	38	25	technology	technology	NOUN
ajst-24974	38	26	and	and	CCONJ
ajst-24974	38	27	structural	structural	ADJ
ajst-24974	38	28	design	design	NOUN
ajst-24974	38	29	.	.	PUNCT
ajst-24974	39	1	the	the	DET
ajst-24974	39	2	figure	figure	NOUN
ajst-24974	39	3	below	below	ADV
ajst-24974	39	4	shows	show	VERB
ajst-24974	39	5	us	we	PRON
ajst-24974	39	6	the	the	DET
ajst-24974	39	7	lattice	lattice	NOUN
ajst-24974	39	8	temperature	temperature	NOUN
ajst-24974	39	9	distribution	distribution	NOUN
ajst-24974	39	10	at	at	ADP
ajst-24974	39	11	the	the	DET
ajst-24974	39	12	bottom	bottom	NOUN
ajst-24974	39	13	of	of	ADP
ajst-24974	39	14	the	the	DET
ajst-24974	39	15	silicon	silicon	NOUN
ajst-24974	39	16	film	film	NOUN
ajst-24974	39	17	inside	inside	ADP
ajst-24974	39	18	the	the	DET
ajst-24974	39	19	n	n	CCONJ
ajst-24974	39	20	-	-	PUNCT
ajst-24974	39	21	channel	channel	NOUN
ajst-24974	39	22	soimosfet	soimosfet	NOUN
ajst-24974	39	23	with	with	ADP
ajst-24974	39	24	different	different	ADJ
ajst-24974	39	25	buried	bury	VERB
ajst-24974	39	26	oxygen	oxygen	NOUN
ajst-24974	39	27	layer	layer	NOUN
ajst-24974	39	28	thicknesses	thickness	NOUN
ajst-24974	39	29	[	[	X
ajst-24974	39	30	3	3	NUM
ajst-24974	39	31	]	]	PUNCT
ajst-24974	39	32	.	.	PUNCT
ajst-24974	40	1	fig	fig	PROPN
ajst-24974	40	2	2	2	NUM
ajst-24974	40	3	.	.	PUNCT
ajst-24974	40	4	lattice	lattice	PROPN
ajst-24974	40	5	temperatures	temperature	NOUN
ajst-24974	40	6	versus	versus	ADP
ajst-24974	40	7	box	box	NOUN
ajst-24974	40	8	thickness	thickness	NOUN
ajst-24974	40	9	for	for	ADP
ajst-24974	40	10	various	various	ADJ
ajst-24974	40	11	ambient	ambient	ADJ
ajst-24974	40	12	temperatures	temperature	NOUN
ajst-24974	40	13	.	.	PUNCT
ajst-24974	41	1	the	the	DET
ajst-24974	41	2	slice	slice	NOUN
ajst-24974	41	3	position	position	NOUN
ajst-24974	41	4	is	be	AUX
ajst-24974	41	5	at	at	ADP
ajst-24974	41	6	the	the	DET
ajst-24974	41	7	bottom	bottom	NOUN
ajst-24974	41	8	of	of	ADP
ajst-24974	41	9	thin	thin	ADJ
ajst-24974	41	10	si	si	X
ajst-24974	41	11	film	film	NOUN
ajst-24974	41	12	3.2	3.2	NUM
ajst-24974	41	13	.	.	PUNCT
ajst-24974	42	1	physical	physical	ADJ
ajst-24974	42	2	characteristics	characteristic	NOUN
ajst-24974	42	3	of	of	ADP
ajst-24974	42	4	soi	soi	ADJ
ajst-24974	42	5	-	-	PUNCT
ajst-24974	42	6	mos	mos	NOUN
ajst-24974	42	7	devices	device	NOUN
ajst-24974	42	8	soi	soi	NOUN
ajst-24974	42	9	(	(	PUNCT
ajst-24974	42	10	silicon	silicon	NOUN
ajst-24974	42	11	on	on	ADP
ajst-24974	42	12	insulator	insulator	NOUN
ajst-24974	42	13	)	)	PUNCT
ajst-24974	42	14	technology	technology	NOUN
ajst-24974	42	15	significantly	significantly	ADV
ajst-24974	42	16	improves	improve	VERB
ajst-24974	42	17	the	the	DET
ajst-24974	42	18	performance	performance	NOUN
ajst-24974	42	19	of	of	ADP
ajst-24974	42	20	conventional	conventional	ADJ
ajst-24974	42	21	silicon	silicon	NOUN
ajst-24974	42	22	-	-	PUNCT
ajst-24974	42	23	based	base	VERB
ajst-24974	42	24	devices	device	NOUN
ajst-24974	42	25	by	by	ADP
ajst-24974	42	26	adding	add	VERB
ajst-24974	42	27	a	a	DET
ajst-24974	42	28	layer	layer	NOUN
ajst-24974	42	29	of	of	ADP
ajst-24974	42	30	insulating	insulate	VERB
ajst-24974	42	31	material	material	NOUN
ajst-24974	42	32	to	to	ADP
ajst-24974	42	33	the	the	DET
ajst-24974	42	34	silicon	silicon	NOUN
ajst-24974	42	35	wafer	wafer	NOUN
ajst-24974	42	36	,	,	PUNCT
ajst-24974	42	37	creating	create	VERB
ajst-24974	42	38	an	an	DET
ajst-24974	42	39	interface	interface	NOUN
ajst-24974	42	40	between	between	ADP
ajst-24974	42	41	the	the	DET
ajst-24974	42	42	semiconductor	semiconductor	NOUN
ajst-24974	42	43	and	and	CCONJ
ajst-24974	42	44	the	the	DET
ajst-24974	42	45	insulator	insulator	NOUN
ajst-24974	42	46	.	.	PUNCT
ajst-24974	43	1	this	this	DET
ajst-24974	43	2	structure	structure	NOUN
ajst-24974	43	3	not	not	PART
ajst-24974	43	4	only	only	ADV
ajst-24974	43	5	increases	increase	VERB
ajst-24974	43	6	the	the	DET
ajst-24974	43	7	speed	speed	NOUN
ajst-24974	43	8	and	and	CCONJ
ajst-24974	43	9	efficiency	efficiency	NOUN
ajst-24974	43	10	of	of	ADP
ajst-24974	43	11	the	the	DET
ajst-24974	43	12	device	device	NOUN
ajst-24974	43	13	,	,	PUNCT
ajst-24974	43	14	but	but	CCONJ
ajst-24974	43	15	also	also	ADV
ajst-24974	43	16	reduces	reduce	VERB
ajst-24974	43	17	the	the	DET
ajst-24974	43	18	power	power	NOUN
ajst-24974	43	19	consumption	consumption	NOUN
ajst-24974	43	20	,	,	PUNCT
ajst-24974	43	21	making	make	VERB
ajst-24974	43	22	soi	soi	ADJ
ajst-24974	43	23	-	-	PUNCT
ajst-24974	43	24	mos	mos	NOUN
ajst-24974	43	25	devices	device	NOUN
ajst-24974	43	26	widely	widely	ADV
ajst-24974	43	27	used	use	VERB
ajst-24974	43	28	in	in	ADP
ajst-24974	43	29	modern	modern	ADJ
ajst-24974	43	30	electronic	electronic	ADJ
ajst-24974	43	31	devices	device	NOUN
ajst-24974	43	32	.	.	PUNCT
ajst-24974	44	1	[	[	X
ajst-24974	44	2	4	4	X
ajst-24974	44	3	]	]	PUNCT
ajst-24974	44	4	the	the	DET
ajst-24974	44	5	self	self	NOUN
ajst-24974	44	6	-	-	PUNCT
ajst-24974	44	7	heating	heating	NOUN
ajst-24974	44	8	effect	effect	NOUN
ajst-24974	44	9	can	can	AUX
ajst-24974	44	10	be	be	AUX
ajst-24974	44	11	expressed	express	VERB
ajst-24974	44	12	by	by	ADP
ajst-24974	44	13	the	the	DET
ajst-24974	44	14	following	follow	VERB
ajst-24974	44	15	equation	equation	NOUN
ajst-24974	44	16	:	:	PUNCT
ajst-24974	44	17	(	(	PUNCT
ajst-24974	44	18	1	1	X
ajst-24974	44	19	)	)	PUNCT
ajst-24974	44	20	where	where	SCONJ
ajst-24974	44	21	is	be	AUX
ajst-24974	44	22	the	the	DET
ajst-24974	44	23	power	power	NOUN
ajst-24974	44	24	(	(	PUNCT
ajst-24974	44	25	in	in	ADP
ajst-24974	44	26	watts	watt	NOUN
ajst-24974	44	27	)	)	PUNCT
ajst-24974	44	28	,	,	PUNCT
ajst-24974	44	29	and	and	CCONJ
ajst-24974	44	30	is	be	AUX
ajst-24974	44	31	the	the	DET
ajst-24974	44	32	current	current	NOUN
ajst-24974	44	33	through	through	ADP
ajst-24974	44	34	the	the	DET
ajst-24974	44	35	device	device	NOUN
ajst-24974	44	36	(	(	PUNCT
ajst-24974	44	37	in	in	ADP
ajst-24974	44	38	amperes	ampere	NOUN
ajst-24974	44	39	)	)	PUNCT
ajst-24974	44	40	,	,	PUNCT
ajst-24974	44	41	and	and	CCONJ
ajst-24974	44	42	is	be	AUX
ajst-24974	44	43	the	the	DET
ajst-24974	44	44	equivalent	equivalent	ADJ
ajst-24974	44	45	resistance	resistance	NOUN
ajst-24974	44	46	of	of	ADP
ajst-24974	44	47	the	the	DET
ajst-24974	44	48	device	device	NOUN
ajst-24974	44	49	(	(	PUNCT
ajst-24974	44	50	in	in	ADP
ajst-24974	44	51	ohms	ohm	NOUN
ajst-24974	44	52	)	)	PUNCT
ajst-24974	44	53	.	.	PUNCT
ajst-24974	45	1	the	the	DET
ajst-24974	45	2	main	main	ADJ
ajst-24974	45	3	physical	physical	ADJ
ajst-24974	45	4	characteristics	characteristic	NOUN
ajst-24974	45	5	of	of	ADP
ajst-24974	45	6	a	a	DET
ajst-24974	45	7	soi	soi	ADJ
ajst-24974	45	8	-	-	PUNCT
ajst-24974	45	9	mos	mos	NOUN
ajst-24974	45	10	device	device	NOUN
ajst-24974	45	11	include	include	VERB
ajst-24974	45	12	its	its	PRON
ajst-24974	45	13	carrier	carrier	NOUN
ajst-24974	45	14	mobility	mobility	NOUN
ajst-24974	45	15	,	,	PUNCT
ajst-24974	45	16	threshold	threshold	NOUN
ajst-24974	45	17	voltage	voltage	NOUN
ajst-24974	45	18	,	,	PUNCT
ajst-24974	45	19	etc	etc	X
ajst-24974	45	20	.	.	X
ajst-24974	46	1	the	the	DET
ajst-24974	46	2	thermal	thermal	ADJ
ajst-24974	46	3	conductivity	conductivity	NOUN
ajst-24974	46	4	is	be	AUX
ajst-24974	46	5	the	the	DET
ajst-24974	46	6	amount	amount	NOUN
ajst-24974	46	7	of	of	ADP
ajst-24974	46	8	heat	heat	NOUN
ajst-24974	46	9	that	that	PRON
ajst-24974	46	10	passes	pass	VERB
ajst-24974	46	11	through	through	ADP
ajst-24974	46	12	the	the	DET
ajst-24974	46	13	material	material	NOUN
ajst-24974	46	14	per	per	ADP
ajst-24974	46	15	unit	unit	NOUN
ajst-24974	46	16	of	of	ADP
ajst-24974	46	17	time	time	NOUN
ajst-24974	46	18	,	,	PUNCT
ajst-24974	46	19	which	which	PRON
ajst-24974	46	20	directly	directly	ADV
ajst-24974	46	21	affects	affect	VERB
ajst-24974	46	22	the	the	DET
ajst-24974	46	23	ability	ability	NOUN
ajst-24974	46	24	of	of	ADP
ajst-24974	46	25	the	the	DET
ajst-24974	46	26	device	device	NOUN
ajst-24974	46	27	to	to	PART
ajst-24974	46	28	dissipate	dissipate	VERB
ajst-24974	46	29	heat	heat	NOUN
ajst-24974	46	30	.	.	PUNCT
ajst-24974	47	1	thermal	thermal	ADJ
ajst-24974	47	2	conductivity	conductivity	NOUN
ajst-24974	47	3	refers	refer	VERB
ajst-24974	47	4	to	to	ADP
ajst-24974	47	5	the	the	DET
ajst-24974	47	6	amount	amount	NOUN
ajst-24974	47	7	of	of	ADP
ajst-24974	47	8	heat	heat	NOUN
ajst-24974	47	9	that	that	PRON
ajst-24974	47	10	passes	pass	VERB
ajst-24974	47	11	through	through	ADP
ajst-24974	47	12	a	a	DET
ajst-24974	47	13	unit	unit	NOUN
ajst-24974	47	14	area	area	NOUN
ajst-24974	47	15	of	of	ADP
ajst-24974	47	16	material	material	NOUN
ajst-24974	47	17	per	per	ADP
ajst-24974	47	18	unit	unit	NOUN
ajst-24974	47	19	time	time	NOUN
ajst-24974	47	20	,	,	PUNCT
ajst-24974	47	21	which	which	PRON
ajst-24974	47	22	directly	directly	ADV
ajst-24974	47	23	affects	affect	VERB
ajst-24974	47	24	the	the	DET
ajst-24974	47	25	heat	heat	NOUN
ajst-24974	47	26	dissipation	dissipation	NOUN
ajst-24974	47	27	capability	capability	NOUN
ajst-24974	47	28	of	of	ADP
ajst-24974	47	29	the	the	DET
ajst-24974	47	30	device	device	NOUN
ajst-24974	47	31	.	.	PUNCT
ajst-24974	48	1	for	for	ADP
ajst-24974	48	2	soi	soi	ADJ
ajst-24974	48	3	-	-	PUNCT
ajst-24974	48	4	mos	mos	NOUN
ajst-24974	48	5	devices	device	NOUN
ajst-24974	48	6	,	,	PUNCT
ajst-24974	48	7	the	the	DET
ajst-24974	48	8	level	level	NOUN
ajst-24974	48	9	of	of	ADP
ajst-24974	48	10	thermal	thermal	ADJ
ajst-24974	48	11	conductivity	conductivity	NOUN
ajst-24974	48	12	determines	determine	VERB
ajst-24974	48	13	whether	whether	SCONJ
ajst-24974	48	14	the	the	DET
ajst-24974	48	15	device	device	NOUN
ajst-24974	48	16	can	can	AUX
ajst-24974	48	17	effectively	effectively	ADV
ajst-24974	48	18	transfer	transfer	VERB
ajst-24974	48	19	the	the	DET
ajst-24974	48	20	heat	heat	NOUN
ajst-24974	48	21	generated	generate	VERB
ajst-24974	48	22	to	to	ADP
ajst-24974	48	23	the	the	DET
ajst-24974	48	24	thermal	thermal	ADJ
ajst-24974	48	25	environment	environment	NOUN
ajst-24974	48	26	when	when	SCONJ
ajst-24974	48	27	working	work	VERB
ajst-24974	48	28	.	.	PUNCT
ajst-24974	49	1	(	(	PUNCT
ajst-24974	49	2	2	2	X
ajst-24974	49	3	)	)	PUNCT
ajst-24974	49	4	where	where	SCONJ
ajst-24974	49	5	denotes	denote	VERB
ajst-24974	49	6	the	the	DET
ajst-24974	49	7	thermal	thermal	ADJ
ajst-24974	49	8	conductivity	conductivity	NOUN
ajst-24974	49	9	,	,	PUNCT
ajst-24974	49	10	and	and	CCONJ
ajst-24974	49	11	is	be	AUX
ajst-24974	49	12	the	the	DET
ajst-24974	49	13	amount	amount	NOUN
ajst-24974	49	14	of	of	ADP
ajst-24974	49	15	heat	heat	NOUN
ajst-24974	49	16	passing	pass	VERB
ajst-24974	49	17	through	through	ADP
ajst-24974	49	18	the	the	DET
ajst-24974	49	19	material	material	NOUN
ajst-24974	49	20	,	,	PUNCT
ajst-24974	49	21	and	and	CCONJ
ajst-24974	49	22	is	be	AUX
ajst-24974	49	23	the	the	DET
ajst-24974	49	24	area	area	NOUN
ajst-24974	49	25	of	of	ADP
ajst-24974	49	26	the	the	DET
ajst-24974	49	27	material	material	NOUN
ajst-24974	49	28	,	,	PUNCT
ajst-24974	49	29	and	and	CCONJ
ajst-24974	49	30	is	be	AUX
ajst-24974	49	31	the	the	DET
ajst-24974	49	32	temperature	temperature	NOUN
ajst-24974	49	33	change	change	NOUN
ajst-24974	49	34	.	.	PUNCT
ajst-24974	50	1	carrier	carrier	NOUN
ajst-24974	50	2	mobility	mobility	NOUN
ajst-24974	50	3	,	,	PUNCT
ajst-24974	50	4	on	on	ADP
ajst-24974	50	5	the	the	DET
ajst-24974	50	6	other	other	ADJ
ajst-24974	50	7	hand	hand	NOUN
ajst-24974	50	8	,	,	PUNCT
ajst-24974	50	9	describes	describe	VERB
ajst-24974	50	10	the	the	DET
ajst-24974	50	11	speed	speed	NOUN
ajst-24974	50	12	at	at	ADP
ajst-24974	50	13	which	which	PRON
ajst-24974	50	14	carriers	carrier	NOUN
ajst-24974	50	15	move	move	VERB
ajst-24974	50	16	in	in	ADP
ajst-24974	50	17	the	the	DET
ajst-24974	50	18	presence	presence	NOUN
ajst-24974	50	19	of	of	ADP
ajst-24974	50	20	an	an	DET
ajst-24974	50	21	electric	electric	ADJ
ajst-24974	50	22	field	field	NOUN
ajst-24974	50	23	,	,	PUNCT
ajst-24974	50	24	a	a	DET
ajst-24974	50	25	parameter	parameter	NOUN
ajst-24974	50	26	that	that	PRON
ajst-24974	50	27	is	be	AUX
ajst-24974	50	28	directly	directly	ADV
ajst-24974	50	29	related	relate	VERB
ajst-24974	50	30	to	to	ADP
ajst-24974	50	31	the	the	DET
ajst-24974	50	32	switching	switch	VERB
ajst-24974	50	33	speed	speed	NOUN
ajst-24974	50	34	and	and	CCONJ
ajst-24974	50	35	operating	operating	NOUN
ajst-24974	50	36	frequency	frequency	NOUN
ajst-24974	50	37	of	of	ADP
ajst-24974	50	38	the	the	DET
ajst-24974	50	39	device	device	NOUN
ajst-24974	50	40	.	.	PUNCT
ajst-24974	51	1	higher	high	ADJ
ajst-24974	51	2	carrier	carrier	NOUN
ajst-24974	51	3	mobility	mobility	NOUN
ajst-24974	51	4	means	mean	VERB
ajst-24974	51	5	faster	fast	ADJ
ajst-24974	51	6	signal	signal	NOUN
ajst-24974	51	7	processing	processing	NOUN
ajst-24974	51	8	and	and	CCONJ
ajst-24974	51	9	lower	low	ADJ
ajst-24974	51	10	power	power	NOUN
ajst-24974	51	11	consumption	consumption	NOUN
ajst-24974	51	12	.	.	PUNCT
ajst-24974	52	1	(	(	PUNCT
ajst-24974	52	2	3	3	X
ajst-24974	52	3	)	)	PUNCT
ajst-24974	52	4	where	where	SCONJ
ajst-24974	52	5	denotes	denote	VERB
ajst-24974	52	6	the	the	DET
ajst-24974	52	7	carrier	carrier	NOUN
ajst-24974	52	8	mobility	mobility	NOUN
ajst-24974	52	9	,	,	PUNCT
ajst-24974	52	10	and	and	CCONJ
ajst-24974	52	11	is	be	AUX
ajst-24974	52	12	the	the	DET
ajst-24974	52	13	carrier	carrier	NOUN
ajst-24974	52	14	drift	drift	NOUN
ajst-24974	52	15	velocity	velocity	NOUN
ajst-24974	52	16	,	,	PUNCT
ajst-24974	52	17	and	and	CCONJ
ajst-24974	52	18	is	be	AUX
ajst-24974	52	19	the	the	DET
ajst-24974	52	20	applied	apply	VERB
ajst-24974	52	21	electric	electric	ADJ
ajst-24974	52	22	field	field	NOUN
ajst-24974	52	23	strength	strength	NOUN
ajst-24974	52	24	.	.	PUNCT
ajst-24974	53	1	in	in	ADP
ajst-24974	53	2	addition	addition	NOUN
ajst-24974	53	3	,	,	PUNCT
ajst-24974	53	4	the	the	DET
ajst-24974	53	5	threshold	threshold	NOUN
ajst-24974	53	6	voltage	voltage	NOUN
ajst-24974	53	7	of	of	ADP
ajst-24974	53	8	the	the	DET
ajst-24974	53	9	soi	soi	ADJ
ajst-24974	53	10	-	-	PUNCT
ajst-24974	53	11	mos	mos	NOUN
ajst-24974	53	12	device	device	NOUN
ajst-24974	53	13	is	be	AUX
ajst-24974	53	14	also	also	ADV
ajst-24974	53	15	an	an	DET
ajst-24974	53	16	important	important	ADJ
ajst-24974	53	17	parameter	parameter	NOUN
ajst-24974	53	18	for	for	ADP
ajst-24974	53	19	measuring	measure	VERB
ajst-24974	53	20	the	the	DET
ajst-24974	53	21	performance	performance	NOUN
ajst-24974	53	22	of	of	ADP
ajst-24974	53	23	the	the	DET
ajst-24974	53	24	device	device	NOUN
ajst-24974	53	25	,	,	PUNCT
ajst-24974	53	26	which	which	PRON
ajst-24974	53	27	reflects	reflect	VERB
ajst-24974	53	28	the	the	DET
ajst-24974	53	29	minimum	minimum	ADJ
ajst-24974	53	30	voltage	voltage	NOUN
ajst-24974	53	31	at	at	ADP
ajst-24974	53	32	which	which	PRON
ajst-24974	53	33	the	the	DET
ajst-24974	53	34	device	device	NOUN
ajst-24974	53	35	begins	begin	VERB
ajst-24974	53	36	to	to	PART
ajst-24974	53	37	conduct	conduct	VERB
ajst-24974	53	38	.	.	PUNCT
ajst-24974	54	1	a	a	DET
ajst-24974	54	2	lower	low	ADJ
ajst-24974	54	3	threshold	threshold	NOUN
ajst-24974	54	4	voltage	voltage	NOUN
ajst-24974	54	5	reduces	reduce	VERB
ajst-24974	54	6	the	the	DET
ajst-24974	54	7	leakage	leakage	NOUN
ajst-24974	54	8	current	current	NOUN
ajst-24974	54	9	of	of	ADP
ajst-24974	54	10	the	the	DET
ajst-24974	54	11	device	device	NOUN
ajst-24974	54	12	during	during	ADP
ajst-24974	54	13	low	low	ADJ
ajst-24974	54	14	-	-	PUNCT
ajst-24974	54	15	voltage	voltage	NOUN
ajst-24974	54	16	operation	operation	NOUN
ajst-24974	54	17	,	,	PUNCT
ajst-24974	54	18	which	which	PRON
ajst-24974	54	19	in	in	ADP
ajst-24974	54	20	turn	turn	NOUN
ajst-24974	54	21	reduces	reduce	VERB
ajst-24974	54	22	the	the	DET
ajst-24974	54	23	overall	overall	ADJ
ajst-24974	54	24	power	power	NOUN
ajst-24974	54	25	consumption	consumption	NOUN
ajst-24974	54	26	.	.	PUNCT
ajst-24974	55	1	ln	ln	INTJ
ajst-24974	55	2	(	(	PUNCT
ajst-24974	55	3	4	4	NUM
ajst-24974	55	4	)	)	PUNCT
ajst-24974	55	5	where	where	SCONJ
ajst-24974	55	6	is	be	AUX
ajst-24974	55	7	the	the	DET
ajst-24974	55	8	threshold	threshold	NOUN
ajst-24974	55	9	voltage	voltage	NOUN
ajst-24974	55	10	,	,	PUNCT
ajst-24974	55	11	and	and	CCONJ
ajst-24974	55	12	is	be	AUX
ajst-24974	55	13	the	the	DET
ajst-24974	55	14	fermiohm	fermiohm	PROPN
ajst-24974	55	15	boundary	boundary	ADJ
ajst-24974	55	16	voltage	voltage	NOUN
ajst-24974	55	17	,	,	PUNCT
ajst-24974	55	18	and	and	CCONJ
ajst-24974	55	19	is	be	AUX
ajst-24974	55	20	the	the	DET
ajst-24974	55	21	boltzmann	boltzmann	PROPN
ajst-24974	55	22	constant	constant	ADJ
ajst-24974	55	23	,	,	PUNCT
ajst-24974	55	24	and	and	CCONJ
ajst-24974	55	25	is	be	AUX
ajst-24974	55	26	the	the	DET
ajst-24974	55	27	absolute	absolute	ADJ
ajst-24974	55	28	temperature	temperature	NOUN
ajst-24974	55	29	,	,	PUNCT
ajst-24974	55	30	and	and	CCONJ
ajst-24974	55	31	is	be	AUX
ajst-24974	55	32	the	the	DET
ajst-24974	55	33	electron	electron	NOUN
ajst-24974	55	34	charge	charge	NOUN
ajst-24974	55	35	,	,	PUNCT
ajst-24974	55	36	and	and	CCONJ
ajst-24974	55	37	is	be	AUX
ajst-24974	55	38	the	the	DET
ajst-24974	55	39	surface	surface	NOUN
ajst-24974	55	40	doping	doping	NOUN
ajst-24974	55	41	concentration	concentration	NOUN
ajst-24974	55	42	,	,	PUNCT
ajst-24974	55	43	and	and	CCONJ
ajst-24974	55	44	is	be	AUX
ajst-24974	55	45	the	the	DET
ajst-24974	55	46	intrinsic	intrinsic	ADJ
ajst-24974	55	47	carrier	carrier	NOUN
ajst-24974	55	48	concentration	concentration	NOUN
ajst-24974	55	49	.	.	PUNCT
ajst-24974	56	1	in	in	ADP
ajst-24974	56	2	summary	summary	NOUN
ajst-24974	56	3	,	,	PUNCT
ajst-24974	56	4	the	the	DET
ajst-24974	56	5	physical	physical	ADJ
ajst-24974	56	6	characteristics	characteristic	NOUN
ajst-24974	56	7	of	of	ADP
ajst-24974	56	8	soi	soi	ADJ
ajst-24974	56	9	-	-	PUNCT
ajst-24974	56	10	mos	mos	NOUN
ajst-24974	56	11	devices	device	NOUN
ajst-24974	56	12	determine	determine	VERB
ajst-24974	56	13	their	their	PRON
ajst-24974	56	14	application	application	NOUN
ajst-24974	56	15	performance	performance	NOUN
ajst-24974	56	16	in	in	ADP
ajst-24974	56	17	electronic	electronic	ADJ
ajst-24974	56	18	devices	device	NOUN
ajst-24974	56	19	.	.	PUNCT
ajst-24974	57	1	by	by	ADP
ajst-24974	57	2	optimising	optimise	VERB
ajst-24974	57	3	these	these	DET
ajst-24974	57	4	characteristics	characteristic	NOUN
ajst-24974	57	5	,	,	PUNCT
ajst-24974	57	6	the	the	DET
ajst-24974	57	7	performance	performance	NOUN
ajst-24974	57	8	and	and	CCONJ
ajst-24974	57	9	reliability	reliability	NOUN
ajst-24974	57	10	of	of	ADP
ajst-24974	57	11	the	the	DET
ajst-24974	57	12	devices	device	NOUN
ajst-24974	57	13	can	can	AUX
ajst-24974	57	14	be	be	AUX
ajst-24974	57	15	further	far	ADV
ajst-24974	57	16	enhanced	enhance	VERB
ajst-24974	57	17	to	to	PART
ajst-24974	57	18	meet	meet	VERB
ajst-24974	57	19	the	the	DET
ajst-24974	57	20	demands	demand	NOUN
ajst-24974	57	21	of	of	ADP
ajst-24974	57	22	modern	modern	ADJ
ajst-24974	57	23	electronics	electronic	NOUN
ajst-24974	57	24	.	.	PUNCT
ajst-24974	58	1	3.3	3.3	NUM
ajst-24974	58	2	.	.	PUNCT
ajst-24974	59	1	analysis	analysis	NOUN
ajst-24974	59	2	of	of	ADP
ajst-24974	59	3	the	the	DET
ajst-24974	59	4	self	self	NOUN
ajst-24974	59	5	-	-	PUNCT
ajst-24974	59	6	heating	heating	NOUN
ajst-24974	59	7	effect	effect	NOUN
ajst-24974	59	8	of	of	ADP
ajst-24974	59	9	soimos	soimos	PROPN
ajst-24974	59	10	devices	device	NOUN
ajst-24974	59	11	soi	soi	ADJ
ajst-24974	59	12	-	-	PUNCT
ajst-24974	59	13	mos	mos	NOUN
ajst-24974	59	14	devices	device	NOUN
ajst-24974	59	15	show	show	VERB
ajst-24974	59	16	excellent	excellent	ADJ
ajst-24974	59	17	performance	performance	NOUN
ajst-24974	59	18	in	in	ADP
ajst-24974	59	19	highfrequency	highfrequency	NOUN
ajst-24974	59	20	,	,	PUNCT
ajst-24974	59	21	low	low	ADJ
ajst-24974	59	22	-	-	PUNCT
ajst-24974	59	23	power	power	NOUN
ajst-24974	59	24	applications	application	NOUN
ajst-24974	59	25	,	,	PUNCT
ajst-24974	59	26	but	but	CCONJ
ajst-24974	59	27	their	their	PRON
ajst-24974	59	28	self	self	NOUN
ajst-24974	59	29	-	-	PUNCT
ajst-24974	59	30	heating	heating	NOUN
ajst-24974	59	31	effect	effect	NOUN
ajst-24974	59	32	adversely	adversely	ADV
ajst-24974	59	33	affects	affect	VERB
ajst-24974	59	34	device	device	NOUN
ajst-24974	59	35	performance	performance	NOUN
ajst-24974	59	36	.	.	PUNCT
ajst-24974	60	1	in	in	ADP
ajst-24974	60	2	this	this	DET
ajst-24974	60	3	section	section	NOUN
ajst-24974	60	4	,	,	PUNCT
ajst-24974	60	5	the	the	DET
ajst-24974	60	6	self	self	NOUN
ajst-24974	60	7	-	-	PUNCT
ajst-24974	60	8	heating	heating	NOUN
ajst-24974	60	9	effect	effect	NOUN
ajst-24974	60	10	of	of	ADP
ajst-24974	60	11	soi	soi	ADJ
ajst-24974	60	12	-	-	PUNCT
ajst-24974	60	13	mos	mos	NOUN
ajst-24974	60	14	devices	device	NOUN
ajst-24974	60	15	and	and	CCONJ
ajst-24974	60	16	its	its	PRON
ajst-24974	60	17	mechanism	mechanism	NOUN
ajst-24974	60	18	are	be	AUX
ajst-24974	60	19	analyzed	analyze	VERB
ajst-24974	60	20	.	.	PUNCT
ajst-24974	61	1	the	the	DET
ajst-24974	61	2	self	self	NOUN
ajst-24974	61	3	-	-	PUNCT
ajst-24974	61	4	heating	heating	NOUN
ajst-24974	61	5	effect	effect	NOUN
ajst-24974	61	6	mainly	mainly	ADV
ajst-24974	61	7	originates	originate	VERB
ajst-24974	61	8	from	from	ADP
ajst-24974	61	9	the	the	DET
ajst-24974	61	10	joule	joule	NOUN
ajst-24974	61	11	heat	heat	NOUN
ajst-24974	61	12	generated	generate	VERB
ajst-24974	61	13	when	when	SCONJ
ajst-24974	61	14	the	the	DET
ajst-24974	61	15	current	current	NOUN
ajst-24974	61	16	passes	pass	VERB
ajst-24974	61	17	through	through	ADP
ajst-24974	61	18	the	the	DET
ajst-24974	61	19	conducting	conducting	NOUN
ajst-24974	61	20	path	path	NOUN
ajst-24974	61	21	during	during	ADP
ajst-24974	61	22	the	the	DET
ajst-24974	61	23	device	device	NOUN
ajst-24974	61	24	operation	operation	NOUN
ajst-24974	61	25	.	.	PUNCT
ajst-24974	62	1	for	for	ADP
ajst-24974	62	2	soi	soi	ADJ
ajst-24974	62	3	-	-	PUNCT
ajst-24974	62	4	mos	mos	NOUN
ajst-24974	62	5	devices	device	NOUN
ajst-24974	62	6	,	,	PUNCT
ajst-24974	62	7	the	the	DET
ajst-24974	62	8	generation	generation	NOUN
ajst-24974	62	9	of	of	ADP
ajst-24974	62	10	heat	heat	NOUN
ajst-24974	62	11	is	be	AUX
ajst-24974	62	12	closely	closely	ADV
ajst-24974	62	13	related	relate	VERB
ajst-24974	62	14	to	to	ADP
ajst-24974	62	15	the	the	DET
ajst-24974	62	16	170	170	NUM
ajst-24974	62	17	structure	structure	NOUN
ajst-24974	62	18	of	of	ADP
ajst-24974	62	19	the	the	DET
ajst-24974	62	20	device	device	NOUN
ajst-24974	62	21	.	.	PUNCT
ajst-24974	63	1	specifically	specifically	ADV
ajst-24974	63	2	,	,	PUNCT
ajst-24974	63	3	the	the	DET
ajst-24974	63	4	heat	heat	NOUN
ajst-24974	63	5	transfer	transfer	NOUN
ajst-24974	63	6	can	can	AUX
ajst-24974	63	7	be	be	AUX
ajst-24974	63	8	calculated	calculate	VERB
ajst-24974	63	9	by	by	ADP
ajst-24974	63	10	the	the	DET
ajst-24974	63	11	following	follow	VERB
ajst-24974	63	12	equation	equation	NOUN
ajst-24974	63	13	:	:	PUNCT
ajst-24974	63	14	where	where	SCONJ
ajst-24974	63	15	denotes	denote	VERB
ajst-24974	63	16	the	the	DET
ajst-24974	63	17	amount	amount	NOUN
ajst-24974	63	18	of	of	ADP
ajst-24974	63	19	heat	heat	NOUN
ajst-24974	63	20	generated	generate	VERB
ajst-24974	63	21	per	per	ADP
ajst-24974	63	22	unit	unit	NOUN
ajst-24974	63	23	time	time	NOUN
ajst-24974	63	24	,	,	PUNCT
ajst-24974	63	25	and	and	CCONJ
ajst-24974	63	26	is	be	AUX
ajst-24974	63	27	the	the	DET
ajst-24974	63	28	heat	heat	NOUN
ajst-24974	63	29	diffusion	diffusion	NOUN
ajst-24974	63	30	coefficient	coefficient	NOUN
ajst-24974	63	31	,	,	PUNCT
ajst-24974	63	32	and	and	CCONJ
ajst-24974	63	33	is	be	AUX
ajst-24974	63	34	the	the	DET
ajst-24974	63	35	power	power	NOUN
ajst-24974	63	36	density	density	NOUN
ajst-24974	63	37	.	.	PUNCT
ajst-24974	64	1	considering	consider	VERB
ajst-24974	64	2	the	the	DET
ajst-24974	64	3	special	special	ADJ
ajst-24974	64	4	structure	structure	NOUN
ajst-24974	64	5	of	of	ADP
ajst-24974	64	6	soi	soi	ADJ
ajst-24974	64	7	-	-	PUNCT
ajst-24974	64	8	mos	mos	NOUN
ajst-24974	64	9	devices	device	NOUN
ajst-24974	64	10	,	,	PUNCT
ajst-24974	64	11	the	the	DET
ajst-24974	64	12	selection	selection	NOUN
ajst-24974	64	13	of	of	ADP
ajst-24974	64	14	the	the	DET
ajst-24974	64	15	thermal	thermal	ADJ
ajst-24974	64	16	interface	interface	NOUN
ajst-24974	64	17	material	material	NOUN
ajst-24974	64	18	(	(	PUNCT
ajst-24974	64	19	tim	tim	PROPN
ajst-24974	64	20	)	)	PUNCT
ajst-24974	64	21	becomes	become	VERB
ajst-24974	64	22	particularly	particularly	ADV
ajst-24974	64	23	important	important	ADJ
ajst-24974	64	24	.	.	PUNCT
ajst-24974	65	1	the	the	DET
ajst-24974	65	2	thermal	thermal	ADJ
ajst-24974	65	3	conductivity	conductivity	NOUN
ajst-24974	65	4	of	of	ADP
ajst-24974	65	5	the	the	DET
ajst-24974	65	6	tim	tim	PROPN
ajst-24974	65	7	(	(	PUNCT
ajst-24974	65	8	)	)	PUNCT
ajst-24974	65	9	directly	directly	ADV
ajst-24974	65	10	affects	affect	VERB
ajst-24974	65	11	the	the	DET
ajst-24974	65	12	heat	heat	NOUN
ajst-24974	65	13	transfer	transfer	NOUN
ajst-24974	65	14	rate	rate	NOUN
ajst-24974	65	15	from	from	ADP
ajst-24974	65	16	the	the	DET
ajst-24974	65	17	device	device	NOUN
ajst-24974	65	18	to	to	ADP
ajst-24974	65	19	the	the	DET
ajst-24974	65	20	substrate	substrate	NOUN
ajst-24974	65	21	.	.	PUNCT
ajst-24974	66	1	therefore	therefore	ADV
ajst-24974	66	2	,	,	PUNCT
ajst-24974	66	3	increasing	increase	VERB
ajst-24974	66	4	the	the	DET
ajst-24974	66	5	thermal	thermal	ADJ
ajst-24974	66	6	conductivity	conductivity	NOUN
ajst-24974	66	7	of	of	ADP
ajst-24974	66	8	tim	tim	PROPN
ajst-24974	66	9	is	be	AUX
ajst-24974	66	10	one	one	NUM
ajst-24974	66	11	of	of	ADP
ajst-24974	66	12	the	the	DET
ajst-24974	66	13	effective	effective	ADJ
ajst-24974	66	14	means	mean	NOUN
ajst-24974	66	15	to	to	PART
ajst-24974	66	16	suppress	suppress	VERB
ajst-24974	66	17	the	the	DET
ajst-24974	66	18	selfheating	selfheating	NOUN
ajst-24974	66	19	effect	effect	NOUN
ajst-24974	66	20	[	[	X
ajst-24974	66	21	5	5	X
ajst-24974	66	22	]	]	PUNCT
ajst-24974	66	23	the	the	DET
ajst-24974	66	24	selection	selection	NOUN
ajst-24974	66	25	of	of	ADP
ajst-24974	66	26	thermal	thermal	ADJ
ajst-24974	66	27	interface	interface	NOUN
ajst-24974	66	28	materials	material	NOUN
ajst-24974	66	29	requires	require	VERB
ajst-24974	66	30	consideration	consideration	NOUN
ajst-24974	66	31	not	not	PART
ajst-24974	66	32	only	only	ADV
ajst-24974	66	33	of	of	ADP
ajst-24974	66	34	thermal	thermal	ADJ
ajst-24974	66	35	conductivity	conductivity	NOUN
ajst-24974	66	36	,	,	PUNCT
ajst-24974	66	37	but	but	CCONJ
ajst-24974	66	38	also	also	ADV
ajst-24974	66	39	of	of	ADP
ajst-24974	66	40	factors	factor	NOUN
ajst-24974	66	41	such	such	ADJ
ajst-24974	66	42	as	as	ADP
ajst-24974	66	43	compatibility	compatibility	NOUN
ajst-24974	66	44	with	with	ADP
ajst-24974	66	45	the	the	DET
ajst-24974	66	46	device	device	NOUN
ajst-24974	66	47	and	and	CCONJ
ajst-24974	66	48	cost	cost	NOUN
ajst-24974	66	49	.	.	PUNCT
ajst-24974	67	1	for	for	ADP
ajst-24974	67	2	example	example	NOUN
ajst-24974	67	3	,	,	PUNCT
ajst-24974	67	4	although	although	SCONJ
ajst-24974	67	5	polymer	polymer	NOUN
ajst-24974	67	6	materials	material	NOUN
ajst-24974	67	7	have	have	VERB
ajst-24974	67	8	lower	low	ADJ
ajst-24974	67	9	thermal	thermal	ADJ
ajst-24974	67	10	conductivity	conductivity	NOUN
ajst-24974	67	11	,	,	PUNCT
ajst-24974	67	12	their	their	PRON
ajst-24974	67	13	excellent	excellent	ADJ
ajst-24974	67	14	flexibility	flexibility	NOUN
ajst-24974	67	15	and	and	CCONJ
ajst-24974	67	16	good	good	ADJ
ajst-24974	67	17	electrical	electrical	ADJ
ajst-24974	67	18	insulation	insulation	NOUN
ajst-24974	67	19	properties	property	NOUN
ajst-24974	67	20	make	make	VERB
ajst-24974	67	21	them	they	PRON
ajst-24974	67	22	still	still	ADV
ajst-24974	67	23	competitive	competitive	ADJ
ajst-24974	67	24	in	in	ADP
ajst-24974	67	25	some	some	DET
ajst-24974	67	26	application	application	NOUN
ajst-24974	67	27	scenarios	scenario	NOUN
ajst-24974	67	28	.	.	PUNCT
ajst-24974	68	1	[	[	X
ajst-24974	68	2	6	6	NUM
ajst-24974	68	3	]	]	PUNCT
ajst-24974	68	4	in	in	ADP
ajst-24974	68	5	summary	summary	NOUN
ajst-24974	68	6	,	,	PUNCT
ajst-24974	68	7	the	the	DET
ajst-24974	68	8	analysis	analysis	NOUN
ajst-24974	68	9	of	of	ADP
ajst-24974	68	10	the	the	DET
ajst-24974	68	11	self	self	NOUN
ajst-24974	68	12	-	-	PUNCT
ajst-24974	68	13	heating	heating	NOUN
ajst-24974	68	14	effect	effect	NOUN
ajst-24974	68	15	of	of	ADP
ajst-24974	68	16	soimos	soimos	ADJ
ajst-24974	68	17	devices	device	NOUN
ajst-24974	68	18	involves	involve	VERB
ajst-24974	68	19	several	several	ADJ
ajst-24974	68	20	aspects	aspect	NOUN
ajst-24974	68	21	,	,	PUNCT
ajst-24974	68	22	including	include	VERB
ajst-24974	68	23	the	the	DET
ajst-24974	68	24	mechanism	mechanism	NOUN
ajst-24974	68	25	of	of	ADP
ajst-24974	68	26	heat	heat	NOUN
ajst-24974	68	27	generation	generation	NOUN
ajst-24974	68	28	,	,	PUNCT
ajst-24974	68	29	the	the	DET
ajst-24974	68	30	pathway	pathway	NOUN
ajst-24974	68	31	of	of	ADP
ajst-24974	68	32	heat	heat	NOUN
ajst-24974	68	33	transfer	transfer	NOUN
ajst-24974	68	34	and	and	CCONJ
ajst-24974	68	35	the	the	DET
ajst-24974	68	36	selection	selection	NOUN
ajst-24974	68	37	of	of	ADP
ajst-24974	68	38	thermal	thermal	ADJ
ajst-24974	68	39	interface	interface	NOUN
ajst-24974	68	40	materials	material	NOUN
ajst-24974	68	41	.	.	PUNCT
ajst-24974	69	1	by	by	ADP
ajst-24974	69	2	optimising	optimise	VERB
ajst-24974	69	3	the	the	DET
ajst-24974	69	4	device	device	NOUN
ajst-24974	69	5	structure	structure	NOUN
ajst-24974	69	6	design	design	NOUN
ajst-24974	69	7	and	and	CCONJ
ajst-24974	69	8	selecting	select	VERB
ajst-24974	69	9	high	high	ADJ
ajst-24974	69	10	thermal	thermal	ADJ
ajst-24974	69	11	conductivity	conductivity	NOUN
ajst-24974	69	12	thermal	thermal	ADJ
ajst-24974	69	13	interface	interface	NOUN
ajst-24974	69	14	materials	material	NOUN
ajst-24974	69	15	,	,	PUNCT
ajst-24974	69	16	the	the	DET
ajst-24974	69	17	selfheating	selfheating	NOUN
ajst-24974	69	18	effect	effect	NOUN
ajst-24974	69	19	can	can	AUX
ajst-24974	69	20	be	be	AUX
ajst-24974	69	21	effectively	effectively	ADV
ajst-24974	69	22	reduced	reduce	VERB
ajst-24974	69	23	,	,	PUNCT
ajst-24974	69	24	thus	thus	ADV
ajst-24974	69	25	improving	improve	VERB
ajst-24974	69	26	the	the	DET
ajst-24974	69	27	performance	performance	NOUN
ajst-24974	69	28	of	of	ADP
ajst-24974	69	29	the	the	DET
ajst-24974	69	30	device	device	NOUN
ajst-24974	69	31	.	.	PUNCT
ajst-24974	70	1	[	[	X
ajst-24974	70	2	7	7	X
ajst-24974	70	3	]	]	X
ajst-24974	70	4	the	the	DET
ajst-24974	70	5	performance	performance	NOUN
ajst-24974	70	6	of	of	ADP
ajst-24974	70	7	the	the	DET
ajst-24974	70	8	device	device	NOUN
ajst-24974	70	9	can	can	AUX
ajst-24974	70	10	be	be	AUX
ajst-24974	70	11	improved	improve	VERB
ajst-24974	70	12	by	by	ADP
ajst-24974	70	13	optimising	optimise	VERB
ajst-24974	70	14	the	the	DET
ajst-24974	70	15	device	device	NOUN
ajst-24974	70	16	structure	structure	NOUN
ajst-24974	70	17	design	design	NOUN
ajst-24974	70	18	and	and	CCONJ
ajst-24974	70	19	selecting	select	VERB
ajst-24974	70	20	high	high	ADJ
ajst-24974	70	21	thermal	thermal	ADJ
ajst-24974	70	22	conductivity	conductivity	NOUN
ajst-24974	70	23	thermal	thermal	ADJ
ajst-24974	70	24	interface	interface	NOUN
ajst-24974	70	25	materials	material	NOUN
ajst-24974	70	26	.	.	PUNCT
ajst-24974	71	1	4	4	X
ajst-24974	71	2	.	.	X
ajst-24974	71	3	thermal	thermal	ADJ
ajst-24974	71	4	conductivity	conductivity	NOUN
ajst-24974	71	5	enhancement	enhancement	NOUN
ajst-24974	71	6	techniques	technique	NOUN
ajst-24974	71	7	for	for	ADP
ajst-24974	71	8	soi	soi	ADJ
ajst-24974	71	9	-	-	PUNCT
ajst-24974	71	10	mos	mos	NOUN
ajst-24974	71	11	devices	device	NOUN
ajst-24974	71	12	4.1	4.1	NUM
ajst-24974	71	13	.	.	PUNCT
ajst-24974	72	1	research	research	NOUN
ajst-24974	72	2	on	on	ADP
ajst-24974	72	3	thermal	thermal	ADJ
ajst-24974	72	4	interface	interface	NOUN
ajst-24974	72	5	materials	material	NOUN
ajst-24974	72	6	in	in	ADP
ajst-24974	72	7	soi	soi	ADJ
ajst-24974	72	8	-	-	PUNCT
ajst-24974	72	9	mos	mos	NOUN
ajst-24974	72	10	devices	device	NOUN
ajst-24974	72	11	,	,	PUNCT
ajst-24974	72	12	thermal	thermal	ADJ
ajst-24974	72	13	interface	interface	NOUN
ajst-24974	72	14	material	material	NOUN
ajst-24974	72	15	(	(	PUNCT
ajst-24974	72	16	tim	tim	PROPN
ajst-24974	72	17	)	)	PUNCT
ajst-24974	72	18	plays	play	VERB
ajst-24974	72	19	a	a	DET
ajst-24974	72	20	crucial	crucial	ADJ
ajst-24974	72	21	role	role	NOUN
ajst-24974	72	22	in	in	ADP
ajst-24974	72	23	filling	fill	VERB
ajst-24974	72	24	the	the	DET
ajst-24974	72	25	gap	gap	NOUN
ajst-24974	72	26	between	between	ADP
ajst-24974	72	27	the	the	DET
ajst-24974	72	28	chip	chip	NOUN
ajst-24974	72	29	and	and	CCONJ
ajst-24974	72	30	the	the	DET
ajst-24974	72	31	heater	heater	NOUN
ajst-24974	72	32	to	to	PART
ajst-24974	72	33	improve	improve	VERB
ajst-24974	72	34	the	the	DET
ajst-24974	72	35	thermal	thermal	ADJ
ajst-24974	72	36	conductivity	conductivity	NOUN
ajst-24974	72	37	efficiency	efficiency	NOUN
ajst-24974	72	38	.	.	PUNCT
ajst-24974	73	1	thermal	thermal	ADJ
ajst-24974	73	2	interface	interface	NOUN
ajst-24974	73	3	material	material	NOUN
ajst-24974	73	4	(	(	PUNCT
ajst-24974	73	5	tim	tim	PROPN
ajst-24974	73	6	)	)	PUNCT
ajst-24974	73	7	is	be	AUX
ajst-24974	73	8	usually	usually	ADV
ajst-24974	73	9	classified	classify	VERB
ajst-24974	73	10	into	into	ADP
ajst-24974	73	11	three	three	NUM
ajst-24974	73	12	main	main	ADJ
ajst-24974	73	13	categories	category	NOUN
ajst-24974	73	14	according	accord	VERB
ajst-24974	73	15	to	to	ADP
ajst-24974	73	16	their	their	PRON
ajst-24974	73	17	different	different	ADJ
ajst-24974	73	18	thermal	thermal	ADJ
ajst-24974	73	19	conductivity	conductivity	NOUN
ajst-24974	73	20	.	.	PUNCT
ajst-24974	74	1	copper	copper	NOUN
ajst-24974	74	2	,	,	PUNCT
ajst-24974	74	3	silver	silver	NOUN
ajst-24974	74	4	and	and	CCONJ
ajst-24974	74	5	other	other	ADJ
ajst-24974	74	6	metal	metal	NOUN
ajst-24974	74	7	thermal	thermal	ADJ
ajst-24974	74	8	conductivity	conductivity	NOUN
ajst-24974	74	9	is	be	AUX
ajst-24974	74	10	very	very	ADV
ajst-24974	74	11	high	high	ADJ
ajst-24974	74	12	,	,	PUNCT
ajst-24974	74	13	but	but	CCONJ
ajst-24974	74	14	because	because	SCONJ
ajst-24974	74	15	of	of	ADP
ajst-24974	74	16	its	its	PRON
ajst-24974	74	17	high	high	ADJ
ajst-24974	74	18	price	price	NOUN
ajst-24974	74	19	,	,	PUNCT
ajst-24974	74	20	and	and	CCONJ
ajst-24974	74	21	the	the	DET
ajst-24974	74	22	device	device	NOUN
ajst-24974	74	23	may	may	AUX
ajst-24974	74	24	produce	produce	VERB
ajst-24974	74	25	corrosion	corrosion	NOUN
ajst-24974	74	26	and	and	CCONJ
ajst-24974	74	27	other	other	ADJ
ajst-24974	74	28	problems	problem	NOUN
ajst-24974	74	29	,	,	PUNCT
ajst-24974	74	30	the	the	DET
ajst-24974	74	31	application	application	NOUN
ajst-24974	74	32	is	be	AUX
ajst-24974	74	33	more	more	ADV
ajst-24974	74	34	limited	limited	ADJ
ajst-24974	74	35	.	.	PUNCT
ajst-24974	75	1	such	such	ADJ
ajst-24974	75	2	as	as	ADP
ajst-24974	75	3	thermal	thermal	ADJ
ajst-24974	75	4	conductivity	conductivity	NOUN
ajst-24974	75	5	polyether	polyether	NOUN
ajst-24974	75	6	ketone	ketone	NOUN
ajst-24974	75	7	(	(	PUNCT
ajst-24974	75	8	peek	peek	NOUN
ajst-24974	75	9	)	)	PUNCT
ajst-24974	75	10	and	and	CCONJ
ajst-24974	75	11	polytetrafluoroethylene	polytetrafluoroethylene	NOUN
ajst-24974	75	12	(	(	PUNCT
ajst-24974	75	13	ptfe	ptfe	NOUN
ajst-24974	75	14	)	)	PUNCT
ajst-24974	75	15	and	and	CCONJ
ajst-24974	75	16	other	other	ADJ
ajst-24974	75	17	polymers	polymer	NOUN
ajst-24974	75	18	,	,	PUNCT
ajst-24974	75	19	its	its	PRON
ajst-24974	75	20	thermal	thermal	ADJ
ajst-24974	75	21	conductivity	conductivity	NOUN
ajst-24974	75	22	is	be	AUX
ajst-24974	75	23	low	low	ADJ
ajst-24974	75	24	,	,	PUNCT
ajst-24974	75	25	but	but	CCONJ
ajst-24974	75	26	inexpensive	inexpensive	ADJ
ajst-24974	75	27	,	,	PUNCT
ajst-24974	75	28	widely	widely	ADV
ajst-24974	75	29	used	use	VERB
ajst-24974	75	30	.	.	PUNCT
ajst-24974	76	1	composites	composite	NOUN
ajst-24974	76	2	combine	combine	VERB
ajst-24974	76	3	the	the	DET
ajst-24974	76	4	advantages	advantage	NOUN
ajst-24974	76	5	of	of	ADP
ajst-24974	76	6	metals	metal	NOUN
ajst-24974	76	7	and	and	CCONJ
ajst-24974	76	8	polymers	polymer	NOUN
ajst-24974	76	9	,	,	PUNCT
ajst-24974	76	10	such	such	ADJ
ajst-24974	76	11	as	as	ADP
ajst-24974	76	12	metal	metal	NOUN
ajst-24974	76	13	-	-	PUNCT
ajst-24974	76	14	based	base	VERB
ajst-24974	76	15	composites	composite	NOUN
ajst-24974	76	16	(	(	PUNCT
ajst-24974	76	17	mbc	mbc	PROPN
ajst-24974	76	18	)	)	PUNCT
ajst-24974	76	19	and	and	CCONJ
ajst-24974	76	20	ceramic	ceramic	NOUN
ajst-24974	76	21	-	-	PUNCT
ajst-24974	76	22	based	base	VERB
ajst-24974	76	23	composites	composite	NOUN
ajst-24974	76	24	(	(	PUNCT
ajst-24974	76	25	cbc	cbc	PROPN
ajst-24974	76	26	)	)	PUNCT
ajst-24974	76	27	,	,	PUNCT
ajst-24974	76	28	which	which	PRON
ajst-24974	76	29	also	also	ADV
ajst-24974	76	30	provide	provide	VERB
ajst-24974	76	31	good	good	ADJ
ajst-24974	76	32	mechanical	mechanical	ADJ
ajst-24974	76	33	strength	strength	NOUN
ajst-24974	76	34	and	and	CCONJ
ajst-24974	76	35	chemical	chemical	NOUN
ajst-24974	76	36	stability	stability	NOUN
ajst-24974	76	37	while	while	SCONJ
ajst-24974	76	38	maintaining	maintain	VERB
ajst-24974	76	39	high	high	ADJ
ajst-24974	76	40	thermal	thermal	ADJ
ajst-24974	76	41	conductivity	conductivity	NOUN
ajst-24974	76	42	.	.	PUNCT
ajst-24974	77	1	the	the	DET
ajst-24974	77	2	performance	performance	NOUN
ajst-24974	77	3	of	of	ADP
ajst-24974	77	4	thermal	thermal	ADJ
ajst-24974	77	5	interface	interface	NOUN
ajst-24974	77	6	materials	material	NOUN
ajst-24974	77	7	not	not	PART
ajst-24974	77	8	only	only	ADV
ajst-24974	77	9	depends	depend	VERB
ajst-24974	77	10	on	on	ADP
ajst-24974	77	11	thermal	thermal	ADJ
ajst-24974	77	12	conductivity	conductivity	NOUN
ajst-24974	77	13	,	,	PUNCT
ajst-24974	77	14	but	but	CCONJ
ajst-24974	77	15	also	also	ADV
ajst-24974	77	16	needs	need	VERB
ajst-24974	77	17	to	to	PART
ajst-24974	77	18	consider	consider	VERB
ajst-24974	77	19	its	its	PRON
ajst-24974	77	20	temperature	temperature	NOUN
ajst-24974	77	21	resistance	resistance	NOUN
ajst-24974	77	22	,	,	PUNCT
ajst-24974	77	23	electrical	electrical	ADJ
ajst-24974	77	24	insulation	insulation	NOUN
ajst-24974	77	25	,	,	PUNCT
ajst-24974	77	26	bonding	bonding	NOUN
ajst-24974	77	27	strength	strength	NOUN
ajst-24974	77	28	,	,	PUNCT
ajst-24974	77	29	cost	cost	NOUN
ajst-24974	77	30	and	and	CCONJ
ajst-24974	77	31	other	other	ADJ
ajst-24974	77	32	factors	factor	NOUN
ajst-24974	77	33	.	.	PUNCT
ajst-24974	78	1	selection	selection	NOUN
ajst-24974	78	2	of	of	ADP
ajst-24974	78	3	the	the	DET
ajst-24974	78	4	appropriate	appropriate	ADJ
ajst-24974	78	5	thermal	thermal	ADJ
ajst-24974	78	6	interface	interface	NOUN
ajst-24974	78	7	material	material	NOUN
ajst-24974	78	8	requires	require	VERB
ajst-24974	78	9	comprehensive	comprehensive	ADJ
ajst-24974	78	10	consideration	consideration	NOUN
ajst-24974	78	11	of	of	ADP
ajst-24974	78	12	the	the	DET
ajst-24974	78	13	operating	operating	NOUN
ajst-24974	78	14	environment	environment	NOUN
ajst-24974	78	15	and	and	CCONJ
ajst-24974	78	16	life	life	NOUN
ajst-24974	78	17	of	of	ADP
ajst-24974	78	18	the	the	DET
ajst-24974	78	19	equipment	equipment	NOUN
ajst-24974	78	20	.	.	PUNCT
ajst-24974	79	1	the	the	DET
ajst-24974	79	2	application	application	NOUN
ajst-24974	79	3	of	of	ADP
ajst-24974	79	4	thermal	thermal	ADJ
ajst-24974	79	5	interface	interface	NOUN
ajst-24974	79	6	materials	material	NOUN
ajst-24974	79	7	also	also	ADV
ajst-24974	79	8	need	need	VERB
ajst-24974	79	9	to	to	PART
ajst-24974	79	10	pay	pay	VERB
ajst-24974	79	11	attention	attention	NOUN
ajst-24974	79	12	to	to	ADP
ajst-24974	79	13	its	its	PRON
ajst-24974	79	14	installation	installation	NOUN
ajst-24974	79	15	method	method	NOUN
ajst-24974	79	16	and	and	CCONJ
ajst-24974	79	17	thickness	thickness	NOUN
ajst-24974	79	18	,	,	PUNCT
ajst-24974	79	19	which	which	PRON
ajst-24974	79	20	will	will	AUX
ajst-24974	79	21	have	have	VERB
ajst-24974	79	22	an	an	DET
ajst-24974	79	23	impact	impact	NOUN
ajst-24974	79	24	on	on	ADP
ajst-24974	79	25	the	the	DET
ajst-24974	79	26	final	final	ADJ
ajst-24974	79	27	thermal	thermal	ADJ
ajst-24974	79	28	conductivity	conductivity	NOUN
ajst-24974	79	29	.	.	PUNCT
ajst-24974	80	1	with	with	ADP
ajst-24974	80	2	the	the	DET
ajst-24974	80	3	development	development	NOUN
ajst-24974	80	4	of	of	ADP
ajst-24974	80	5	technology	technology	NOUN
ajst-24974	80	6	,	,	PUNCT
ajst-24974	80	7	new	new	ADJ
ajst-24974	80	8	thermal	thermal	ADJ
ajst-24974	80	9	interface	interface	NOUN
ajst-24974	80	10	materials	material	NOUN
ajst-24974	80	11	are	be	AUX
ajst-24974	80	12	emerging	emerge	VERB
ajst-24974	80	13	,	,	PUNCT
ajst-24974	80	14	such	such	ADJ
ajst-24974	80	15	as	as	ADP
ajst-24974	80	16	nanocomposites	nanocomposite	NOUN
ajst-24974	80	17	and	and	CCONJ
ajst-24974	80	18	graphene	graphene	VERB
ajst-24974	80	19	.	.	PUNCT
ajst-24974	81	1	these	these	DET
ajst-24974	81	2	new	new	ADJ
ajst-24974	81	3	materials	material	NOUN
ajst-24974	81	4	exhibit	exhibit	VERB
ajst-24974	81	5	higher	high	ADJ
ajst-24974	81	6	thermal	thermal	ADJ
ajst-24974	81	7	conductivity	conductivity	NOUN
ajst-24974	81	8	and	and	CCONJ
ajst-24974	81	9	better	well	ADJ
ajst-24974	81	10	mechanical	mechanical	ADJ
ajst-24974	81	11	properties	property	NOUN
ajst-24974	81	12	,	,	PUNCT
ajst-24974	81	13	providing	provide	VERB
ajst-24974	81	14	new	new	ADJ
ajst-24974	81	15	possibilities	possibility	NOUN
ajst-24974	81	16	for	for	ADP
ajst-24974	81	17	improving	improve	VERB
ajst-24974	81	18	the	the	DET
ajst-24974	81	19	thermal	thermal	ADJ
ajst-24974	81	20	management	management	NOUN
ajst-24974	81	21	efficiency	efficiency	NOUN
ajst-24974	81	22	of	of	ADP
ajst-24974	81	23	soi	soi	ADJ
ajst-24974	81	24	-	-	PUNCT
ajst-24974	81	25	mos	mos	NOUN
ajst-24974	81	26	devices	device	NOUN
ajst-24974	81	27	.	.	PUNCT
ajst-24974	82	1	future	future	ADJ
ajst-24974	82	2	research	research	NOUN
ajst-24974	82	3	will	will	AUX
ajst-24974	82	4	focus	focus	VERB
ajst-24974	82	5	on	on	ADP
ajst-24974	82	6	the	the	DET
ajst-24974	82	7	development	development	NOUN
ajst-24974	82	8	of	of	ADP
ajst-24974	82	9	thermal	thermal	ADJ
ajst-24974	82	10	interface	interface	NOUN
ajst-24974	82	11	materials	material	NOUN
ajst-24974	82	12	with	with	ADP
ajst-24974	82	13	higher	high	ADJ
ajst-24974	82	14	thermal	thermal	ADJ
ajst-24974	82	15	conductivity	conductivity	NOUN
ajst-24974	82	16	,	,	PUNCT
ajst-24974	82	17	better	well	ADJ
ajst-24974	82	18	thermal	thermal	ADJ
ajst-24974	82	19	stability	stability	NOUN
ajst-24974	82	20	and	and	CCONJ
ajst-24974	82	21	lower	low	ADJ
ajst-24974	82	22	cost	cost	NOUN
ajst-24974	82	23	to	to	PART
ajst-24974	82	24	meet	meet	VERB
ajst-24974	82	25	the	the	DET
ajst-24974	82	26	increasingly	increasingly	ADV
ajst-24974	82	27	demanding	demand	VERB
ajst-24974	82	28	thermal	thermal	ADJ
ajst-24974	82	29	management	management	NOUN
ajst-24974	82	30	requirements	requirement	NOUN
ajst-24974	82	31	[	[	X
ajst-24974	82	32	8	8	X
ajst-24974	82	33	]	]	SYM
ajst-24974	82	34	4.2	4.2	NUM
ajst-24974	82	35	.	.	PUNCT
ajst-24974	83	1	ultra	ultra	ADJ
ajst-24974	83	2	-	-	ADJ
ajst-24974	83	3	thin	thin	ADJ
ajst-24974	83	4	silicon	silicon	NOUN
ajst-24974	83	5	layer	layer	NOUN
ajst-24974	83	6	research	research	NOUN
ajst-24974	83	7	ultra	ultra	ADJ
ajst-24974	83	8	-	-	ADJ
ajst-24974	83	9	thin	thin	ADJ
ajst-24974	83	10	silicon	silicon	NOUN
ajst-24974	83	11	layers	layer	NOUN
ajst-24974	83	12	play	play	VERB
ajst-24974	83	13	a	a	DET
ajst-24974	83	14	key	key	ADJ
ajst-24974	83	15	role	role	NOUN
ajst-24974	83	16	in	in	ADP
ajst-24974	83	17	improving	improve	VERB
ajst-24974	83	18	the	the	DET
ajst-24974	83	19	thermal	thermal	ADJ
ajst-24974	83	20	conductivity	conductivity	NOUN
ajst-24974	83	21	of	of	ADP
ajst-24974	83	22	devices	device	NOUN
ajst-24974	83	23	and	and	CCONJ
ajst-24974	83	24	help	help	VERB
ajst-24974	83	25	mitigate	mitigate	VERB
ajst-24974	83	26	the	the	DET
ajst-24974	83	27	impact	impact	NOUN
ajst-24974	83	28	of	of	ADP
ajst-24974	83	29	self	self	NOUN
ajst-24974	83	30	-	-	PUNCT
ajst-24974	83	31	heating	heating	NOUN
ajst-24974	83	32	effects	effect	NOUN
ajst-24974	83	33	on	on	ADP
ajst-24974	83	34	soi	soi	ADJ
ajst-24974	83	35	-	-	PUNCT
ajst-24974	83	36	mos	mos	NOUN
ajst-24974	83	37	device	device	NOUN
ajst-24974	83	38	performance	performance	NOUN
ajst-24974	83	39	.	.	PUNCT
ajst-24974	84	1	by	by	ADP
ajst-24974	84	2	optimising	optimise	VERB
ajst-24974	84	3	the	the	DET
ajst-24974	84	4	silicon	silicon	NOUN
ajst-24974	84	5	layer	layer	NOUN
ajst-24974	84	6	thickness	thickness	NOUN
ajst-24974	84	7	,	,	PUNCT
ajst-24974	84	8	the	the	DET
ajst-24974	84	9	thermal	thermal	ADJ
ajst-24974	84	10	management	management	NOUN
ajst-24974	84	11	performance	performance	NOUN
ajst-24974	84	12	of	of	ADP
ajst-24974	84	13	the	the	DET
ajst-24974	84	14	device	device	NOUN
ajst-24974	84	15	can	can	AUX
ajst-24974	84	16	be	be	AUX
ajst-24974	84	17	effectively	effectively	ADV
ajst-24974	84	18	enhanced	enhance	VERB
ajst-24974	84	19	.	.	PUNCT
ajst-24974	85	1	in	in	ADP
ajst-24974	85	2	this	this	DET
ajst-24974	85	3	section	section	NOUN
ajst-24974	85	4	,	,	PUNCT
ajst-24974	85	5	the	the	DET
ajst-24974	85	6	effect	effect	NOUN
ajst-24974	85	7	of	of	ADP
ajst-24974	85	8	different	different	ADJ
ajst-24974	85	9	thicknesses	thickness	NOUN
ajst-24974	85	10	of	of	ADP
ajst-24974	85	11	ultrathin	ultrathin	ADJ
ajst-24974	85	12	silicon	silicon	NOUN
ajst-24974	85	13	layers	layer	NOUN
ajst-24974	85	14	on	on	ADP
ajst-24974	85	15	the	the	DET
ajst-24974	85	16	thermal	thermal	ADJ
ajst-24974	85	17	performance	performance	NOUN
ajst-24974	85	18	of	of	ADP
ajst-24974	85	19	the	the	DET
ajst-24974	85	20	devices	device	NOUN
ajst-24974	85	21	will	will	AUX
ajst-24974	85	22	be	be	AUX
ajst-24974	85	23	explored	explore	VERB
ajst-24974	85	24	.	.	PUNCT
ajst-24974	86	1	in	in	ADP
ajst-24974	86	2	order	order	NOUN
ajst-24974	86	3	to	to	PART
ajst-24974	86	4	better	well	ADV
ajst-24974	86	5	understand	understand	VERB
ajst-24974	86	6	the	the	DET
ajst-24974	86	7	impact	impact	NOUN
ajst-24974	86	8	of	of	ADP
ajst-24974	86	9	ultra	ultra	ADJ
ajst-24974	86	10	-	-	ADJ
ajst-24974	86	11	thin	thin	ADJ
ajst-24974	86	12	silicon	silicon	NOUN
ajst-24974	86	13	layers	layer	NOUN
ajst-24974	86	14	on	on	ADP
ajst-24974	86	15	the	the	DET
ajst-24974	86	16	device	device	NOUN
ajst-24974	86	17	performance	performance	NOUN
ajst-24974	86	18	,	,	PUNCT
ajst-24974	86	19	numerical	numerical	ADJ
ajst-24974	86	20	simulations	simulation	NOUN
ajst-24974	86	21	were	be	AUX
ajst-24974	86	22	used	use	VERB
ajst-24974	86	23	to	to	PART
ajst-24974	86	24	analyse	analyse	VERB
ajst-24974	86	25	the	the	DET
ajst-24974	86	26	thermal	thermal	ADJ
ajst-24974	86	27	conduction	conduction	NOUN
ajst-24974	86	28	characteristics	characteristic	NOUN
ajst-24974	86	29	at	at	ADP
ajst-24974	86	30	different	different	ADJ
ajst-24974	86	31	silicon	silicon	NOUN
ajst-24974	86	32	layer	layer	NOUN
ajst-24974	86	33	thicknesses	thicknesse	VERB
ajst-24974	86	34	[	[	X
ajst-24974	86	35	9	9	NUM
ajst-24974	86	36	]	]	PUNCT
ajst-24974	86	37	(	(	PUNCT
ajst-24974	86	38	5	5	NUM
ajst-24974	86	39	)	)	PUNCT
ajst-24974	86	40	where	where	SCONJ
ajst-24974	86	41	is	be	AUX
ajst-24974	86	42	the	the	DET
ajst-24974	86	43	maximum	maximum	ADJ
ajst-24974	86	44	temperature	temperature	NOUN
ajst-24974	86	45	,	,	PUNCT
ajst-24974	86	46	and	and	CCONJ
ajst-24974	86	47	is	be	AUX
ajst-24974	86	48	the	the	DET
ajst-24974	86	49	power	power	NOUN
ajst-24974	86	50	density	density	NOUN
ajst-24974	86	51	,	,	PUNCT
ajst-24974	86	52	and	and	CCONJ
ajst-24974	86	53	is	be	AUX
ajst-24974	86	54	the	the	DET
ajst-24974	86	55	thermal	thermal	ADJ
ajst-24974	86	56	conductivity	conductivity	NOUN
ajst-24974	86	57	,	,	PUNCT
ajst-24974	86	58	and	and	CCONJ
ajst-24974	86	59	is	be	AUX
ajst-24974	86	60	the	the	DET
ajst-24974	86	61	effective	effective	ADJ
ajst-24974	86	62	heat	heat	NOUN
ajst-24974	86	63	transfer	transfer	NOUN
ajst-24974	86	64	area	area	NOUN
ajst-24974	86	65	.	.	PUNCT
ajst-24974	87	1	by	by	ADP
ajst-24974	87	2	varying	vary	VERB
ajst-24974	87	3	the	the	DET
ajst-24974	87	4	thickness	thickness	NOUN
ajst-24974	87	5	of	of	ADP
ajst-24974	87	6	the	the	DET
ajst-24974	87	7	silicon	silicon	NOUN
ajst-24974	87	8	layer	layer	NOUN
ajst-24974	87	9	,	,	PUNCT
ajst-24974	87	10	the	the	DET
ajst-24974	87	11	effect	effect	NOUN
ajst-24974	87	12	of	of	ADP
ajst-24974	87	13	different	different	ADJ
ajst-24974	87	14	thicknesses	thickness	NOUN
ajst-24974	87	15	on	on	ADP
ajst-24974	87	16	the	the	DET
ajst-24974	87	17	maximum	maximum	ADJ
ajst-24974	87	18	operating	operate	VERB
ajst-24974	87	19	temperature	temperature	NOUN
ajst-24974	87	20	of	of	ADP
ajst-24974	87	21	the	the	DET
ajst-24974	87	22	device	device	NOUN
ajst-24974	87	23	can	can	AUX
ajst-24974	87	24	be	be	AUX
ajst-24974	87	25	observed	observe	VERB
ajst-24974	87	26	.	.	PUNCT
ajst-24974	88	1	table	table	NOUN
ajst-24974	88	2	1	1	NUM
ajst-24974	88	3	shows	show	VERB
ajst-24974	88	4	the	the	DET
ajst-24974	88	5	effect	effect	NOUN
ajst-24974	88	6	of	of	ADP
ajst-24974	88	7	different	different	ADJ
ajst-24974	88	8	silicon	silicon	NOUN
ajst-24974	88	9	layer	layer	NOUN
ajst-24974	88	10	thicknesses	thicknesse	VERB
ajst-24974	88	11	on	on	ADP
ajst-24974	88	12	the	the	DET
ajst-24974	88	13	maximum	maximum	ADJ
ajst-24974	88	14	operating	operate	VERB
ajst-24974	88	15	temperature	temperature	NOUN
ajst-24974	88	16	under	under	ADP
ajst-24974	88	17	the	the	DET
ajst-24974	88	18	same	same	ADJ
ajst-24974	88	19	conditions	condition	NOUN
ajst-24974	88	20	.	.	PUNCT
ajst-24974	89	1	table	table	NOUN
ajst-24974	89	2	1	1	NUM
ajst-24974	89	3	.	.	PUNCT
ajst-24974	90	1	the	the	DET
ajst-24974	90	2	effect	effect	NOUN
ajst-24974	90	3	of	of	ADP
ajst-24974	90	4	different	different	ADJ
ajst-24974	90	5	silicon	silicon	NOUN
ajst-24974	90	6	layer	layer	NOUN
ajst-24974	90	7	thicknesses	thicknesse	VERB
ajst-24974	90	8	on	on	ADP
ajst-24974	90	9	the	the	DET
ajst-24974	90	10	maximum	maximum	ADJ
ajst-24974	90	11	operating	operate	VERB
ajst-24974	90	12	temperature	temperature	NOUN
ajst-24974	90	13	silicon	silicon	NOUN
ajst-24974	90	14	layer	layer	NOUN
ajst-24974	90	15	thickness	thickness	NOUN
ajst-24974	90	16	(	(	PUNCT
ajst-24974	90	17	nm	nm	NOUN
ajst-24974	90	18	)	)	PUNCT
ajst-24974	90	19	maximum	maximum	ADJ
ajst-24974	90	20	operating	operate	VERB
ajst-24974	90	21	temperature	temperature	NOUN
ajst-24974	90	22	(	(	PUNCT
ajst-24974	90	23	°	°	ADP
ajst-24974	90	24	c	c	NOUN
ajst-24974	90	25	)	)	PUNCT
ajst-24974	90	26	10	10	NUM
ajst-24974	90	27	95	95	NUM
ajst-24974	90	28	20	20	NUM
ajst-24974	90	29	85	85	NUM
ajst-24974	90	30	30	30	NUM
ajst-24974	90	31	75	75	NUM
ajst-24974	90	32	from	from	ADP
ajst-24974	90	33	the	the	DET
ajst-24974	90	34	above	above	ADJ
ajst-24974	90	35	table	table	NOUN
ajst-24974	90	36	1	1	NUM
ajst-24974	90	37	,	,	PUNCT
ajst-24974	90	38	it	it	PRON
ajst-24974	90	39	can	can	AUX
ajst-24974	90	40	be	be	AUX
ajst-24974	90	41	seen	see	VERB
ajst-24974	90	42	that	that	SCONJ
ajst-24974	90	43	the	the	DET
ajst-24974	90	44	maximum	maximum	ADJ
ajst-24974	90	45	operating	operate	VERB
ajst-24974	90	46	temperature	temperature	NOUN
ajst-24974	90	47	of	of	ADP
ajst-24974	90	48	the	the	DET
ajst-24974	90	49	device	device	NOUN
ajst-24974	90	50	decreases	decrease	VERB
ajst-24974	90	51	with	with	ADP
ajst-24974	90	52	the	the	DET
ajst-24974	90	53	increase	increase	NOUN
ajst-24974	90	54	of	of	ADP
ajst-24974	90	55	the	the	DET
ajst-24974	90	56	silicon	silicon	NOUN
ajst-24974	90	57	layer	layer	NOUN
ajst-24974	90	58	thickness	thickness	NOUN
ajst-24974	90	59	.	.	PUNCT
ajst-24974	91	1	this	this	PRON
ajst-24974	91	2	proves	prove	VERB
ajst-24974	91	3	that	that	SCONJ
ajst-24974	91	4	the	the	DET
ajst-24974	91	5	self	self	NOUN
ajst-24974	91	6	-	-	PUNCT
ajst-24974	91	7	heating	heating	NOUN
ajst-24974	91	8	effect	effect	NOUN
ajst-24974	91	9	of	of	ADP
ajst-24974	91	10	the	the	DET
ajst-24974	91	11	device	device	NOUN
ajst-24974	91	12	can	can	AUX
ajst-24974	91	13	be	be	AUX
ajst-24974	91	14	effectively	effectively	ADV
ajst-24974	91	15	controlled	control	VERB
ajst-24974	91	16	by	by	ADP
ajst-24974	91	17	adjusting	adjust	VERB
ajst-24974	91	18	the	the	DET
ajst-24974	91	19	thickness	thickness	NOUN
ajst-24974	91	20	of	of	ADP
ajst-24974	91	21	the	the	DET
ajst-24974	91	22	silicon	silicon	NOUN
ajst-24974	91	23	layer	layer	NOUN
ajst-24974	91	24	.	.	PUNCT
ajst-24974	92	1	further	further	ADJ
ajst-24974	92	2	experiments	experiment	NOUN
ajst-24974	92	3	and	and	CCONJ
ajst-24974	92	4	simulations	simulation	NOUN
ajst-24974	92	5	show	show	VERB
ajst-24974	92	6	that	that	SCONJ
ajst-24974	92	7	the	the	DET
ajst-24974	92	8	appropriate	appropriate	ADJ
ajst-24974	92	9	thickness	thickness	NOUN
ajst-24974	92	10	of	of	ADP
ajst-24974	92	11	the	the	DET
ajst-24974	92	12	silicon	silicon	NOUN
ajst-24974	92	13	layer	layer	NOUN
ajst-24974	92	14	not	not	PART
ajst-24974	92	15	only	only	ADV
ajst-24974	92	16	reduces	reduce	VERB
ajst-24974	92	17	the	the	DET
ajst-24974	92	18	maximum	maximum	ADJ
ajst-24974	92	19	operating	operate	VERB
ajst-24974	92	20	temperature	temperature	NOUN
ajst-24974	92	21	of	of	ADP
ajst-24974	92	22	the	the	DET
ajst-24974	92	23	device	device	NOUN
ajst-24974	92	24	,	,	PUNCT
ajst-24974	92	25	but	but	CCONJ
ajst-24974	92	26	also	also	ADV
ajst-24974	92	27	improves	improve	VERB
ajst-24974	92	28	the	the	DET
ajst-24974	92	29	lifetime	lifetime	NOUN
ajst-24974	92	30	of	of	ADP
ajst-24974	92	31	the	the	DET
ajst-24974	92	32	device	device	NOUN
ajst-24974	92	33	.	.	PUNCT
ajst-24974	93	1	excessively	excessively	ADV
ajst-24974	93	2	thick	thick	ADJ
ajst-24974	93	3	silicon	silicon	NOUN
ajst-24974	93	4	layer	layer	NOUN
ajst-24974	93	5	will	will	AUX
ajst-24974	93	6	also	also	ADV
ajst-24974	93	7	bring	bring	VERB
ajst-24974	93	8	cost	cost	NOUN
ajst-24974	93	9	and	and	CCONJ
ajst-24974	93	10	size	size	NOUN
ajst-24974	93	11	limitations	limitation	NOUN
ajst-24974	93	12	,	,	PUNCT
ajst-24974	93	13	so	so	SCONJ
ajst-24974	93	14	it	it	PRON
ajst-24974	93	15	is	be	AUX
ajst-24974	93	16	necessary	necessary	ADJ
ajst-24974	93	17	to	to	PART
ajst-24974	93	18	find	find	VERB
ajst-24974	93	19	a	a	DET
ajst-24974	93	20	best	good	ADJ
ajst-24974	93	21	balance	balance	NOUN
ajst-24974	93	22	.	.	PUNCT
ajst-24974	94	1	the	the	DET
ajst-24974	94	2	study	study	NOUN
ajst-24974	94	3	of	of	ADP
ajst-24974	94	4	ultra	ultra	ADJ
ajst-24974	94	5	-	-	ADJ
ajst-24974	94	6	thin	thin	ADJ
ajst-24974	94	7	silicon	silicon	NOUN
ajst-24974	94	8	layer	layer	NOUN
ajst-24974	94	9	is	be	AUX
ajst-24974	94	10	of	of	ADP
ajst-24974	94	11	great	great	ADJ
ajst-24974	94	12	significance	significance	NOUN
ajst-24974	94	13	to	to	PART
ajst-24974	94	14	improve	improve	VERB
ajst-24974	94	15	the	the	DET
ajst-24974	94	16	thermal	thermal	ADJ
ajst-24974	94	17	management	management	NOUN
ajst-24974	94	18	performance	performance	NOUN
ajst-24974	94	19	of	of	ADP
ajst-24974	94	20	soi	soi	ADJ
ajst-24974	94	21	-	-	PUNCT
ajst-24974	94	22	mos	mos	NOUN
ajst-24974	94	23	devices	device	NOUN
ajst-24974	94	24	.	.	PUNCT
ajst-24974	95	1	by	by	ADP
ajst-24974	95	2	precisely	precisely	ADV
ajst-24974	95	3	controlling	control	VERB
ajst-24974	95	4	the	the	DET
ajst-24974	95	5	thickness	thickness	NOUN
ajst-24974	95	6	of	of	ADP
ajst-24974	95	7	the	the	DET
ajst-24974	95	8	silicon	silicon	NOUN
ajst-24974	95	9	layer	layer	NOUN
ajst-24974	95	10	,	,	PUNCT
ajst-24974	95	11	the	the	DET
ajst-24974	95	12	thermal	thermal	ADJ
ajst-24974	95	13	performance	performance	NOUN
ajst-24974	95	14	of	of	ADP
ajst-24974	95	15	the	the	DET
ajst-24974	95	16	device	device	NOUN
ajst-24974	95	17	can	can	AUX
ajst-24974	95	18	be	be	AUX
ajst-24974	95	19	significantly	significantly	ADV
ajst-24974	95	20	improved	improve	VERB
ajst-24974	95	21	,	,	PUNCT
ajst-24974	95	22	and	and	CCONJ
ajst-24974	95	23	thus	thus	ADV
ajst-24974	95	24	the	the	DET
ajst-24974	95	25	overall	overall	ADJ
ajst-24974	95	26	performance	performance	NOUN
ajst-24974	95	27	and	and	CCONJ
ajst-24974	95	28	reliability	reliability	NOUN
ajst-24974	95	29	of	of	ADP
ajst-24974	95	30	the	the	DET
ajst-24974	95	31	device	device	NOUN
ajst-24974	95	32	can	can	AUX
ajst-24974	95	33	be	be	AUX
ajst-24974	95	34	improved	improve	VERB
ajst-24974	95	35	.	.	PUNCT
ajst-24974	96	1	future	future	ADJ
ajst-24974	96	2	research	research	NOUN
ajst-24974	96	3	will	will	AUX
ajst-24974	96	4	continue	continue	VERB
ajst-24974	96	5	to	to	PART
ajst-24974	96	6	explore	explore	VERB
ajst-24974	96	7	new	new	ADJ
ajst-24974	96	8	techniques	technique	NOUN
ajst-24974	96	9	to	to	PART
ajst-24974	96	10	further	far	ADV
ajst-24974	96	11	optimise	optimise	VERB
ajst-24974	96	12	the	the	DET
ajst-24974	96	13	performance	performance	NOUN
ajst-24974	96	14	of	of	ADP
ajst-24974	96	15	ultra	ultra	ADJ
ajst-24974	96	16	-	-	ADJ
ajst-24974	96	17	thin	thin	ADJ
ajst-24974	96	18	silicon	silicon	NOUN
ajst-24974	96	19	layers	layer	NOUN
ajst-24974	96	20	.	.	PUNCT
ajst-24974	97	1	5	5	X
ajst-24974	97	2	.	.	X
ajst-24974	97	3	summary	summary	NOUN
ajst-24974	97	4	in	in	ADP
ajst-24974	97	5	this	this	DET
ajst-24974	97	6	paper	paper	NOUN
ajst-24974	97	7	,	,	PUNCT
ajst-24974	97	8	we	we	PRON
ajst-24974	97	9	provide	provide	VERB
ajst-24974	97	10	a	a	DET
ajst-24974	97	11	new	new	ADJ
ajst-24974	97	12	idea	idea	NOUN
ajst-24974	97	13	to	to	PART
ajst-24974	97	14	reduce	reduce	VERB
ajst-24974	97	15	the	the	DET
ajst-24974	97	16	power	power	NOUN
ajst-24974	97	17	consumption	consumption	NOUN
ajst-24974	97	18	and	and	CCONJ
ajst-24974	97	19	improve	improve	VERB
ajst-24974	97	20	the	the	DET
ajst-24974	97	21	performance	performance	NOUN
ajst-24974	97	22	of	of	ADP
ajst-24974	97	23	soi	soi	ADJ
ajst-24974	97	24	-	-	PUNCT
ajst-24974	97	25	mos	mos	NOUN
ajst-24974	97	26	devices	device	NOUN
ajst-24974	97	27	by	by	ADP
ajst-24974	97	28	thoroughly	thoroughly	ADV
ajst-24974	97	29	investigating	investigate	VERB
ajst-24974	97	30	the	the	DET
ajst-24974	97	31	self	self	NOUN
ajst-24974	97	32	-	-	PUNCT
ajst-24974	97	33	heating	heating	NOUN
ajst-24974	97	34	effect	effect	NOUN
ajst-24974	97	35	of	of	ADP
ajst-24974	97	36	soi	soi	ADJ
ajst-24974	97	37	-	-	PUNCT
ajst-24974	97	38	mos	mos	NOUN
ajst-24974	97	39	devices	device	NOUN
ajst-24974	97	40	in	in	ADP
ajst-24974	97	41	cmos	cmos	NOUN
ajst-24974	97	42	process	process	NOUN
ajst-24974	97	43	and	and	CCONJ
ajst-24974	97	44	proposing	propose	VERB
ajst-24974	97	45	various	various	ADJ
ajst-24974	97	46	suppression	suppression	NOUN
ajst-24974	97	47	methods	method	NOUN
ajst-24974	97	48	.	.	PUNCT
ajst-24974	98	1	based	base	VERB
ajst-24974	98	2	on	on	ADP
ajst-24974	98	3	the	the	DET
ajst-24974	98	4	analysis	analysis	NOUN
ajst-24974	98	5	of	of	ADP
ajst-24974	98	6	the	the	DET
ajst-24974	98	7	self	self	NOUN
ajst-24974	98	8	171	171	NUM
ajst-24974	98	9	heating	heating	NOUN
ajst-24974	98	10	effect	effect	NOUN
ajst-24974	98	11	of	of	ADP
ajst-24974	98	12	traditional	traditional	ADJ
ajst-24974	98	13	mos	mos	PROPN
ajst-24974	98	14	devices	device	NOUN
ajst-24974	98	15	and	and	CCONJ
ajst-24974	98	16	the	the	DET
ajst-24974	98	17	physical	physical	ADJ
ajst-24974	98	18	properties	property	NOUN
ajst-24974	98	19	of	of	ADP
ajst-24974	98	20	soi	soi	ADJ
ajst-24974	98	21	-	-	PUNCT
ajst-24974	98	22	mos	mos	NOUN
ajst-24974	98	23	devices	device	NOUN
ajst-24974	98	24	,	,	PUNCT
ajst-24974	98	25	this	this	DET
ajst-24974	98	26	study	study	NOUN
ajst-24974	98	27	establishes	establish	VERB
ajst-24974	98	28	a	a	DET
ajst-24974	98	29	selfheating	selfheating	NOUN
ajst-24974	98	30	effect	effect	NOUN
ajst-24974	98	31	model	model	NOUN
ajst-24974	98	32	applicable	applicable	ADJ
ajst-24974	98	33	to	to	ADP
ajst-24974	98	34	soi	soi	ADJ
ajst-24974	98	35	-	-	PUNCT
ajst-24974	98	36	mos	mos	NOUN
ajst-24974	98	37	devices	device	NOUN
ajst-24974	98	38	and	and	CCONJ
ajst-24974	98	39	explores	explore	VERB
ajst-24974	98	40	three	three	NUM
ajst-24974	98	41	main	main	ADJ
ajst-24974	98	42	thermal	thermal	ADJ
ajst-24974	98	43	conductivity	conductivity	NOUN
ajst-24974	98	44	enhancement	enhancement	NOUN
ajst-24974	98	45	techniques	technique	NOUN
ajst-24974	98	46	:	:	PUNCT
ajst-24974	98	47	thermal	thermal	ADJ
ajst-24974	98	48	interface	interface	NOUN
ajst-24974	98	49	materials	material	NOUN
ajst-24974	98	50	,	,	PUNCT
ajst-24974	98	51	ultra	ultra	ADJ
ajst-24974	98	52	-	-	ADJ
ajst-24974	98	53	thin	thin	ADJ
ajst-24974	98	54	silicon	silicon	NOUN
ajst-24974	98	55	layers	layer	NOUN
ajst-24974	98	56	,	,	PUNCT
ajst-24974	98	57	and	and	CCONJ
ajst-24974	98	58	local	local	ADJ
ajst-24974	98	59	heat	heat	NOUN
ajst-24974	98	60	dissipation	dissipation	NOUN
ajst-24974	98	61	techniques	technique	NOUN
ajst-24974	98	62	.	.	PUNCT
ajst-24974	99	1	[	[	X
ajst-24974	99	2	10	10	NUM
ajst-24974	99	3	]	]	PUNCT
ajst-24974	99	4	.	.	PUNCT
ajst-24974	100	1	the	the	DET
ajst-24974	100	2	research	research	NOUN
ajst-24974	100	3	results	result	NOUN
ajst-24974	100	4	of	of	ADP
ajst-24974	100	5	thermal	thermal	ADJ
ajst-24974	100	6	interface	interface	NOUN
ajst-24974	100	7	materials	material	NOUN
ajst-24974	100	8	,	,	PUNCT
ajst-24974	100	9	as	as	ADP
ajst-24974	100	10	the	the	DET
ajst-24974	100	11	key	key	ADJ
ajst-24974	100	12	link	link	NOUN
ajst-24974	100	13	connecting	connect	VERB
ajst-24974	100	14	the	the	DET
ajst-24974	100	15	device	device	NOUN
ajst-24974	100	16	and	and	CCONJ
ajst-24974	100	17	the	the	DET
ajst-24974	100	18	heat	heat	NOUN
ajst-24974	100	19	dissipation	dissipation	NOUN
ajst-24974	100	20	system	system	NOUN
ajst-24974	100	21	,	,	PUNCT
ajst-24974	100	22	show	show	VERB
ajst-24974	100	23	that	that	SCONJ
ajst-24974	100	24	different	different	ADJ
ajst-24974	100	25	types	type	NOUN
ajst-24974	100	26	of	of	ADP
ajst-24974	100	27	thermal	thermal	ADJ
ajst-24974	100	28	interface	interface	NOUN
ajst-24974	100	29	materials	material	NOUN
ajst-24974	100	30	,	,	PUNCT
ajst-24974	100	31	such	such	ADJ
ajst-24974	100	32	as	as	ADP
ajst-24974	100	33	thermally	thermally	ADV
ajst-24974	100	34	conductive	conductive	ADJ
ajst-24974	100	35	polymers	polymer	NOUN
ajst-24974	100	36	,	,	PUNCT
ajst-24974	100	37	metals	metal	NOUN
ajst-24974	100	38	,	,	PUNCT
ajst-24974	100	39	and	and	CCONJ
ajst-24974	100	40	silicon	silicon	NOUN
ajst-24974	100	41	oxides	oxide	NOUN
ajst-24974	100	42	,	,	PUNCT
ajst-24974	100	43	can	can	AUX
ajst-24974	100	44	effectively	effectively	ADV
ajst-24974	100	45	enhance	enhance	VERB
ajst-24974	100	46	the	the	DET
ajst-24974	100	47	heat	heat	NOUN
ajst-24974	100	48	transfer	transfer	NOUN
ajst-24974	100	49	efficiency	efficiency	NOUN
ajst-24974	100	50	.	.	PUNCT
ajst-24974	101	1	especially	especially	ADV
ajst-24974	101	2	in	in	ADP
ajst-24974	101	3	the	the	DET
ajst-24974	101	4	field	field	NOUN
ajst-24974	101	5	of	of	ADP
ajst-24974	101	6	microand	microand	NOUN
ajst-24974	101	7	nanoelectronics	nanoelectronic	NOUN
ajst-24974	101	8	,	,	PUNCT
ajst-24974	101	9	these	these	DET
ajst-24974	101	10	researches	research	NOUN
ajst-24974	101	11	provide	provide	VERB
ajst-24974	101	12	strong	strong	ADJ
ajst-24974	101	13	support	support	NOUN
ajst-24974	101	14	for	for	ADP
ajst-24974	101	15	solving	solve	VERB
ajst-24974	101	16	the	the	DET
ajst-24974	101	17	thermal	thermal	ADJ
ajst-24974	101	18	management	management	NOUN
ajst-24974	101	19	problems	problem	NOUN
ajst-24974	101	20	of	of	ADP
ajst-24974	101	21	soi	soi	ADJ
ajst-24974	101	22	-	-	PUNCT
ajst-24974	101	23	mos	mos	NOUN
ajst-24974	101	24	devices	device	NOUN
ajst-24974	102	1	[	[	X
ajst-24974	102	2	11	11	NUM
ajst-24974	102	3	]	]	PUNCT
ajst-24974	102	4	references	reference	NOUN
ajst-24974	102	5	[	[	X
ajst-24974	102	6	1	1	NUM
ajst-24974	102	7	]	]	X
ajst-24974	102	8	wang	wang	PROPN
ajst-24974	102	9	,	,	PUNCT
ajst-24974	102	10	y.	y.	PROPN
ajst-24974	102	11	,	,	PUNCT
ajst-24974	102	12	zhou	zhou	PROPN
ajst-24974	102	13	,	,	PUNCT
ajst-24974	102	14	x.	x.	PROPN
ajst-24974	102	15	,	,	PUNCT
ajst-24974	102	16	zeng	zeng	PROPN
ajst-24974	102	17	,	,	PUNCT
ajst-24974	102	18	m.	m.	NOUN
ajst-24974	102	19	,	,	PUNCT
ajst-24974	102	20	et	et	PROPN
ajst-24974	102	21	al	al	PROPN
ajst-24974	102	22	.	.	PROPN
ajst-24974	103	1	(	(	PUNCT
ajst-24974	103	2	2021	2021	NUM
ajst-24974	103	3	)	)	PUNCT
ajst-24974	103	4	effect	effect	NOUN
ajst-24974	103	5	of	of	ADP
ajst-24974	103	6	annealing	anneal	VERB
ajst-24974	103	7	temperature	temperature	NOUN
ajst-24974	103	8	on	on	ADP
ajst-24974	103	9	the	the	DET
ajst-24974	103	10	performance	performance	NOUN
ajst-24974	103	11	of	of	ADP
ajst-24974	103	12	osg	osg	PROPN
ajst-24974	103	13	films	film	NOUN
ajst-24974	103	14	.	.	PUNCT
ajst-24974	104	1	electronics	electronic	NOUN
ajst-24974	104	2	world	world	NOUN
ajst-24974	104	3	,	,	PUNCT
ajst-24974	104	4	(	(	PUNCT
ajst-24974	104	5	20	20	NUM
ajst-24974	104	6	):	):	SYM
ajst-24974	104	7	20	20	NUM
ajst-24974	104	8	-	-	SYM
ajst-24974	104	9	21	21	NUM
ajst-24974	104	10	.	.	PUNCT
ajst-24974	105	1	[	[	X
ajst-24974	105	2	2	2	NUM
ajst-24974	105	3	]	]	SYM
ajst-24974	105	4	yang	yang	PROPN
ajst-24974	105	5	,	,	PUNCT
ajst-24974	105	6	s.	s.	PROPN
ajst-24974	105	7	,	,	PUNCT
ajst-24974	105	8	liu	liu	PROPN
ajst-24974	105	9	,	,	PUNCT
ajst-24974	105	10	y.	y.	PROPN
ajst-24974	105	11	(	(	PUNCT
ajst-24974	105	12	2023	2023	NUM
ajst-24974	105	13	)	)	PUNCT
ajst-24974	105	14	current	current	ADJ
ajst-24974	105	15	status	status	NOUN
ajst-24974	105	16	and	and	CCONJ
ajst-24974	105	17	new	new	ADJ
ajst-24974	105	18	developments	development	NOUN
ajst-24974	105	19	of	of	ADP
ajst-24974	105	20	sic	sic	ADJ
ajst-24974	105	21	power	power	NOUN
ajst-24974	105	22	ldmos	ldmos	ADJ
ajst-24974	105	23	devices	device	NOUN
ajst-24974	105	24	.	.	PUNCT
ajst-24974	106	1	semiconductor	semiconductor	NOUN
ajst-24974	106	2	technology	technology	NOUN
ajst-24974	106	3	,	,	PUNCT
ajst-24974	106	4	48(11	48(11	NUM
ajst-24974	106	5	):	):	PUNCT
ajst-24974	106	6	949	949	NUM
ajst-24974	106	7	-	-	SYM
ajst-24974	106	8	960	960	NUM
ajst-24974	106	9	.	.	PUNCT
ajst-24974	107	1	[	[	X
ajst-24974	107	2	3	3	NUM
ajst-24974	107	3	]	]	X
ajst-24974	107	4	gao	gao	PROPN
ajst-24974	107	5	,	,	PUNCT
ajst-24974	107	6	y.	y.	PROPN
ajst-24974	107	7	,	,	PUNCT
ajst-24974	107	8	zhang	zhang	PROPN
ajst-24974	107	9	,	,	PUNCT
ajst-24974	107	10	x.	x.	PROPN
ajst-24974	107	11	,	,	PUNCT
ajst-24974	107	12	liu	liu	PROPN
ajst-24974	107	13	,	,	PUNCT
ajst-24974	107	14	m.	m.	NOUN
ajst-24974	107	15	,	,	PUNCT
ajst-24974	107	16	et	et	PROPN
ajst-24974	107	17	al	al	PROPN
ajst-24974	107	18	.	.	PROPN
ajst-24974	108	1	(	(	PUNCT
ajst-24974	108	2	2006	2006	NUM
ajst-24974	108	3	)	)	PUNCT
ajst-24974	108	4	study	study	NOUN
ajst-24974	108	5	of	of	ADP
ajst-24974	108	6	self	self	NOUN
ajst-24974	108	7	-	-	PUNCT
ajst-24974	108	8	heating	heating	NOUN
ajst-24974	108	9	effect	effect	NOUN
ajst-24974	108	10	in	in	ADP
ajst-24974	108	11	soi	soi	ADJ
ajst-24974	108	12	devices	device	NOUN
ajst-24974	108	13	based	base	VERB
ajst-24974	108	14	on	on	ADP
ajst-24974	108	15	equivalent	equivalent	ADJ
ajst-24974	108	16	capacitance	capacitance	NOUN
ajst-24974	108	17	method	method	NOUN
ajst-24974	108	18	.	.	PUNCT
ajst-24974	109	1	research	research	NOUN
ajst-24974	109	2	&	&	CCONJ
ajst-24974	109	3	progress	progress	NOUN
ajst-24974	109	4	of	of	ADP
ajst-24974	109	5	solidstate	solidstate	PROPN
ajst-24974	109	6	electronics	electronic	NOUN
ajst-24974	109	7	,	,	PUNCT
ajst-24974	109	8	(	(	PUNCT
ajst-24974	109	9	04	04	NUM
ajst-24974	109	10	):	):	PUNCT
ajst-24974	109	11	450	450	NUM
ajst-24974	109	12	-	-	SYM
ajst-24974	109	13	455	455	NUM
ajst-24974	109	14	.	.	PUNCT
ajst-24974	110	1	[	[	X
ajst-24974	110	2	4	4	NUM
ajst-24974	110	3	]	]	X
ajst-24974	110	4	luo	luo	PROPN
ajst-24974	110	5	,	,	PUNCT
ajst-24974	110	6	n.	n.	PROPN
ajst-24974	110	7	,	,	PUNCT
ajst-24974	110	8	cao	cao	PROPN
ajst-24974	110	9	,	,	PUNCT
ajst-24974	110	10	j.	j.	PROPN
ajst-24974	110	11	(	(	PUNCT
ajst-24974	110	12	2022	2022	NUM
ajst-24974	110	13	)	)	PUNCT
ajst-24974	110	14	current	current	ADJ
ajst-24974	110	15	status	status	NOUN
ajst-24974	110	16	and	and	CCONJ
ajst-24974	110	17	prospects	prospect	NOUN
ajst-24974	110	18	of	of	ADP
ajst-24974	110	19	hightemperature	hightemperature	NOUN
ajst-24974	110	20	soi	soi	NOUN
ajst-24974	110	21	technology	technology	NOUN
ajst-24974	110	22	.	.	PUNCT
ajst-24974	111	1	electronics	electronic	NOUN
ajst-24974	111	2	&	&	CCONJ
ajst-24974	111	3	packaging	packaging	NOUN
ajst-24974	111	4	,	,	PUNCT
ajst-24974	111	5	22(12	22(12	NUM
ajst-24974	111	6	):	):	PUNCT
ajst-24974	111	7	89	89	NUM
ajst-24974	111	8	-	-	SYM
ajst-24974	111	9	97	97	NUM
ajst-24974	111	10	.	.	PUNCT
ajst-24974	112	1	[	[	X
ajst-24974	112	2	5	5	NUM
ajst-24974	112	3	]	]	SYM
ajst-24974	112	4	lu	lu	PROPN
ajst-24974	112	5	,	,	PUNCT
ajst-24974	112	6	h.	h.	PROPN
ajst-24974	112	7	,	,	PUNCT
ajst-24974	112	8	cao	cao	PROPN
ajst-24974	112	9	,	,	PUNCT
ajst-24974	112	10	j.	j.	PROPN
ajst-24974	112	11	,	,	PUNCT
ajst-24974	112	12	wu	wu	PROPN
ajst-24974	112	13	,	,	PUNCT
ajst-24974	112	14	b.	b.	PROPN
ajst-24974	112	15	(	(	PUNCT
ajst-24974	112	16	2019	2019	NUM
ajst-24974	112	17	)	)	PUNCT
ajst-24974	112	18	optimization	optimization	NOUN
ajst-24974	112	19	and	and	CCONJ
ajst-24974	112	20	characterization	characterization	NOUN
ajst-24974	112	21	of	of	ADP
ajst-24974	112	22	metal	metal	NOUN
ajst-24974	112	23	silicide	silicide	NOUN
ajst-24974	112	24	process	process	NOUN
ajst-24974	112	25	in	in	ADP
ajst-24974	112	26	90	90	NUM
ajst-24974	112	27	nm	nm	PROPN
ajst-24974	112	28	cmos	cmos	PROPN
ajst-24974	112	29	technology	technology	NOUN
ajst-24974	112	30	platform	platform	NOUN
ajst-24974	112	31	.	.	PUNCT
ajst-24974	112	32	integrated	integrate	VERB
ajst-24974	112	33	circuit	circuit	NOUN
ajst-24974	112	34	applications	application	NOUN
ajst-24974	112	35	,	,	PUNCT
ajst-24974	112	36	36(09	36(09	NUM
ajst-24974	112	37	):	):	PUNCT
ajst-24974	112	38	17	17	NUM
ajst-24974	112	39	-	-	SYM
ajst-24974	112	40	19	19	NUM
ajst-24974	112	41	.	.	PUNCT
ajst-24974	113	1	[	[	X
ajst-24974	113	2	6	6	NUM
ajst-24974	113	3	]	]	X
ajst-24974	113	4	luo	luo	PROPN
ajst-24974	113	5	,	,	PUNCT
ajst-24974	113	6	n.	n.	PROPN
ajst-24974	113	7	(	(	PUNCT
ajst-24974	113	8	2022	2022	NUM
ajst-24974	113	9	)	)	PUNCT
ajst-24974	113	10	high	high	ADJ
ajst-24974	113	11	-	-	PUNCT
ajst-24974	113	12	temperature	temperature	NOUN
ajst-24974	113	13	semiconductor	semiconductor	NOUN
ajst-24974	113	14	technology	technology	NOUN
ajst-24974	113	15	maximizing	maximize	VERB
ajst-24974	113	16	the	the	DET
ajst-24974	113	17	performance	performance	NOUN
ajst-24974	113	18	of	of	ADP
ajst-24974	113	19	silicon	silicon	PROPN
ajst-24974	113	20	carbide	carbide	PROPN
ajst-24974	113	21	.	.	PUNCT
ajst-24974	114	1	china	china	PROPN
ajst-24974	114	2	integrated	integrate	VERB
ajst-24974	114	3	circuit	circuit	NOUN
ajst-24974	114	4	,	,	PUNCT
ajst-24974	114	5	31(06	31(06	NUM
ajst-24974	114	6	):	):	PUNCT
ajst-24974	114	7	31	31	NUM
ajst-24974	114	8	-	-	SYM
ajst-24974	114	9	36	36	NUM
ajst-24974	114	10	.	.	PUNCT
ajst-24974	115	1	[	[	X
ajst-24974	115	2	7	7	NUM
ajst-24974	115	3	]	]	SYM
ajst-24974	115	4	fan	fan	PROPN
ajst-24974	115	5	,	,	PUNCT
ajst-24974	115	6	w.	w.	PROPN
ajst-24974	115	7	,	,	PUNCT
ajst-24974	115	8	yan	yan	PROPN
ajst-24974	115	9	,	,	PUNCT
ajst-24974	115	10	j.	j.	PROPN
ajst-24974	115	11	,	,	PUNCT
ajst-24974	115	12	feng	feng	PROPN
ajst-24974	115	13	,	,	PUNCT
ajst-24974	115	14	r.	r.	PROPN
ajst-24974	115	15	,	,	PUNCT
ajst-24974	115	16	et	et	PROPN
ajst-24974	115	17	al	al	PROPN
ajst-24974	115	18	.	.	PROPN
ajst-24974	115	19	(	(	PUNCT
ajst-24974	115	20	2021	2021	NUM
ajst-24974	115	21	)	)	PUNCT
ajst-24974	115	22	research	research	NOUN
ajst-24974	115	23	on	on	ADP
ajst-24974	115	24	optimization	optimization	NOUN
ajst-24974	115	25	of	of	ADP
ajst-24974	115	26	bipolar	bipolar	ADJ
ajst-24974	115	27	device	device	NOUN
ajst-24974	115	28	structure	structure	NOUN
ajst-24974	115	29	and	and	CCONJ
ajst-24974	115	30	process	process	NOUN
ajst-24974	115	31	using	use	VERB
ajst-24974	115	32	low	low	ADJ
ajst-24974	115	33	-	-	PUNCT
ajst-24974	115	34	temperature	temperature	NOUN
ajst-24974	115	35	oxidation	oxidation	NOUN
ajst-24974	115	36	technology	technology	NOUN
ajst-24974	115	37	.	.	PUNCT
ajst-24974	116	1	china	china	PROPN
ajst-24974	116	2	integrated	integrate	VERB
ajst-24974	116	3	circuit	circuit	NOUN
ajst-24974	116	4	,	,	PUNCT
ajst-24974	116	5	30(06	30(06	NUM
ajst-24974	116	6	):	):	PUNCT
ajst-24974	116	7	89	89	NUM
ajst-24974	116	8	-	-	SYM
ajst-24974	116	9	93	93	NUM
ajst-24974	116	10	.	.	PUNCT
ajst-24974	117	1	[	[	X
ajst-24974	117	2	8	8	NUM
ajst-24974	117	3	]	]	SYM
ajst-24974	117	4	yang	yang	PROPN
ajst-24974	117	5	,	,	PUNCT
ajst-24974	117	6	f.	f.	PROPN
ajst-24974	117	7	,	,	PUNCT
ajst-24974	117	8	hang	hang	PROPN
ajst-24974	117	9	,	,	PUNCT
ajst-24974	117	10	c.	c.	PROPN
ajst-24974	117	11	,	,	PUNCT
ajst-24974	117	12	tian	tian	PROPN
ajst-24974	117	13	,	,	PUNCT
ajst-24974	117	14	y.	y.	PROPN
ajst-24974	117	15	(	(	PUNCT
ajst-24974	117	16	2021	2021	NUM
ajst-24974	117	17	)	)	PUNCT
ajst-24974	117	18	research	research	NOUN
ajst-24974	117	19	progress	progress	NOUN
ajst-24974	117	20	on	on	ADP
ajst-24974	117	21	preparation	preparation	NOUN
ajst-24974	117	22	and	and	CCONJ
ajst-24974	117	23	sintering	sinter	VERB
ajst-24974	117	24	performance	performance	NOUN
ajst-24974	117	25	of	of	ADP
ajst-24974	117	26	nano	nano	NOUN
ajst-24974	117	27	-	-	PUNCT
ajst-24974	117	28	paste	paste	NOUN
ajst-24974	117	29	for	for	ADP
ajst-24974	117	30	power	power	NOUN
ajst-24974	117	31	device	device	NOUN
ajst-24974	117	32	packaging	packaging	NOUN
ajst-24974	117	33	.	.	PUNCT
ajst-24974	118	1	electronics	electronic	NOUN
ajst-24974	118	2	&	&	CCONJ
ajst-24974	118	3	packaging	packaging	NOUN
ajst-24974	118	4	,	,	PUNCT
ajst-24974	118	5	21(03	21(03	NUM
ajst-24974	118	6	):	):	PUNCT
ajst-24974	118	7	12	12	NUM
ajst-24974	118	8	-	-	SYM
ajst-24974	118	9	21	21	NUM
ajst-24974	118	10	.	.	PUNCT
ajst-24974	119	1	[	[	X
ajst-24974	119	2	9	9	NUM
ajst-24974	119	3	]	]	SYM
ajst-24974	119	4	li	li	PROPN
ajst-24974	119	5	,	,	PUNCT
ajst-24974	119	6	x.	x.	PROPN
ajst-24974	119	7	,	,	PUNCT
ajst-24974	119	8	wang	wang	PROPN
ajst-24974	119	9	,	,	PUNCT
ajst-24974	119	10	m.	m.	NOUN
ajst-24974	119	11	,	,	PUNCT
ajst-24974	119	12	wu	wu	PROPN
ajst-24974	119	13	,	,	PUNCT
ajst-24974	119	14	j.	j.	PROPN
ajst-24974	119	15	,	,	PUNCT
ajst-24974	119	16	et	et	PROPN
ajst-24974	119	17	al	al	PROPN
ajst-24974	119	18	.	.	PROPN
ajst-24974	119	19	(	(	PUNCT
ajst-24974	119	20	2020	2020	NUM
ajst-24974	119	21	)	)	PUNCT
ajst-24974	119	22	study	study	NOUN
ajst-24974	119	23	on	on	ADP
ajst-24974	119	24	the	the	DET
ajst-24974	119	25	effect	effect	NOUN
ajst-24974	119	26	of	of	ADP
ajst-24974	119	27	conducted	conduct	VERB
ajst-24974	119	28	electromagnetic	electromagnetic	ADJ
ajst-24974	119	29	interference	interference	NOUN
ajst-24974	119	30	on	on	ADP
ajst-24974	119	31	silicon	silicon	NOUN
ajst-24974	119	32	-	-	PUNCT
ajst-24974	119	33	oninsulator	oninsulator	NOUN
ajst-24974	119	34	process	process	NOUN
ajst-24974	119	35	devices	device	NOUN
ajst-24974	119	36	.	.	PUNCT
ajst-24974	120	1	research	research	NOUN
ajst-24974	120	2	&	&	CCONJ
ajst-24974	120	3	progress	progress	NOUN
ajst-24974	120	4	of	of	ADP
ajst-24974	120	5	solid	solid	ADJ
ajst-24974	120	6	state	state	NOUN
ajst-24974	120	7	electronics	electronic	NOUN
ajst-24974	120	8	,	,	PUNCT
ajst-24974	120	9	40(02	40(02	NUM
ajst-24974	120	10	):	):	PUNCT
ajst-24974	120	11	149	149	NUM
ajst-24974	120	12	-	-	SYM
ajst-24974	120	13	153	153	NUM
ajst-24974	120	14	.	.	PUNCT
ajst-24974	121	1	[	[	X
ajst-24974	121	2	10	10	NUM
ajst-24974	121	3	]	]	SYM
ajst-24974	121	4	su	su	PROPN
ajst-24974	121	5	,	,	PUNCT
ajst-24974	121	6	j.	j.	PROPN
ajst-24974	121	7	,	,	PUNCT
ajst-24974	121	8	zhu	zhu	PROPN
ajst-24974	121	9	,	,	PUNCT
ajst-24974	121	10	x.	x.	PROPN
ajst-24974	121	11	,	,	PUNCT
ajst-24974	121	12	ji	ji	PROPN
ajst-24974	121	13	,	,	PUNCT
ajst-24974	121	14	x.	x.	PROPN
ajst-24974	121	15	,	,	PUNCT
ajst-24974	121	16	et	et	PROPN
ajst-24974	121	17	al	al	PROPN
ajst-24974	121	18	.	.	PROPN
ajst-24974	122	1	(	(	PUNCT
ajst-24974	122	2	2024	2024	NUM
ajst-24974	122	3	)	)	PUNCT
ajst-24974	122	4	research	research	NOUN
ajst-24974	122	5	progress	progress	NOUN
ajst-24974	122	6	on	on	ADP
ajst-24974	122	7	physical	physical	ADJ
ajst-24974	122	8	preparation	preparation	NOUN
ajst-24974	122	9	process	process	NOUN
ajst-24974	122	10	of	of	ADP
ajst-24974	122	11	si	si	NOUN
ajst-24974	122	12	-	-	PUNCT
ajst-24974	122	13	based	base	VERB
ajst-24974	122	14	sic	sic	ADJ
ajst-24974	122	15	films	film	NOUN
ajst-24974	122	16	.	.	PUNCT
ajst-24974	123	1	journal	journal	PROPN
ajst-24974	123	2	of	of	ADP
ajst-24974	123	3	changzhou	changzhou	PROPN
ajst-24974	123	4	university	university	PROPN
ajst-24974	123	5	(	(	PUNCT
ajst-24974	123	6	natural	natural	ADJ
ajst-24974	123	7	science	science	NOUN
ajst-24974	123	8	edition	edition	NOUN
ajst-24974	123	9	)	)	PUNCT
ajst-24974	123	10	,	,	PUNCT
ajst-24974	123	11	36(01	36(01	NUM
ajst-24974	123	12	):	):	PUNCT
ajst-24974	123	13	9	9	NUM
ajst-24974	123	14	-	-	SYM
ajst-24974	123	15	17	17	NUM
ajst-24974	123	16	.	.	PUNCT
ajst-24974	124	1	[	[	X
ajst-24974	124	2	11	11	NUM
ajst-24974	124	3	]	]	X
ajst-24974	124	4	jiang	jiang	PROPN
ajst-24974	124	5	,	,	PUNCT
ajst-24974	124	6	h.	h.	PROPN
ajst-24974	124	7	,	,	PUNCT
ajst-24974	124	8	yu	yu	PROPN
ajst-24974	124	9	,	,	PUNCT
ajst-24974	124	10	x.	x.	PROPN
ajst-24974	124	11	,	,	PUNCT
ajst-24974	124	12	xue	xue	PROPN
ajst-24974	124	13	,	,	PUNCT
ajst-24974	124	14	m.	m.	NOUN
ajst-24974	124	15	,	,	PUNCT
ajst-24974	124	16	et	et	PROPN
ajst-24974	124	17	al	al	PROPN
ajst-24974	124	18	.	.	PROPN
ajst-24974	124	19	(	(	PUNCT
ajst-24974	124	20	2021	2021	NUM
ajst-24974	124	21	)	)	PUNCT
ajst-24974	124	22	application	application	NOUN
ajst-24974	124	23	and	and	CCONJ
ajst-24974	124	24	latest	late	ADJ
ajst-24974	124	25	research	research	NOUN
ajst-24974	124	26	progress	progress	NOUN
ajst-24974	124	27	of	of	ADP
ajst-24974	124	28	silicon	silicon	NOUN
ajst-24974	124	29	carbide	carbide	NOUN
ajst-24974	124	30	in	in	ADP
ajst-24974	124	31	thermal	thermal	ADJ
ajst-24974	124	32	conductive	conductive	ADJ
ajst-24974	124	33	materials	material	NOUN
ajst-24974	124	34	.	.	PUNCT
ajst-24974	125	1	journal	journal	PROPN
ajst-24974	125	2	of	of	ADP
ajst-24974	125	3	nanchang	nanchang	PROPN
ajst-24974	125	4	hangkong	hangkong	PROPN
ajst-24974	125	5	university	university	PROPN
ajst-24974	125	6	(	(	PUNCT
ajst-24974	125	7	natural	natural	ADJ
ajst-24974	125	8	science	science	NOUN
ajst-24974	125	9	edition	edition	NOUN
ajst-24974	125	10	)	)	PUNCT
ajst-24974	125	11	,	,	PUNCT
ajst-24974	125	12	35(02	35(02	NUM
ajst-24974	125	13	):	):	PUNCT
ajst-24974	125	14	51	51	NUM
ajst-24974	125	15	-	-	SYM
ajst-24974	125	16	60	60	NUM
ajst-24974	125	17	.	.	PUNCT