id	sid	tid	token	lemma	pos
ajst-6855	1	1	academic	academic	ADJ
ajst-6855	1	2	journal	journal	NOUN
ajst-6855	1	3	of	of	ADP
ajst-6855	1	4	science	science	NOUN
ajst-6855	1	5	and	and	CCONJ
ajst-6855	1	6	technology	technology	NOUN
ajst-6855	1	7	issn	issn	NOUN
ajst-6855	1	8	:	:	PUNCT
ajst-6855	1	9	2771	2771	NUM
ajst-6855	1	10	-	-	SYM
ajst-6855	1	11	3032	3032	NUM
ajst-6855	1	12	|	|	NOUN
ajst-6855	1	13	vol	vol	NOUN
ajst-6855	1	14	.	.	PROPN
ajst-6855	2	1	5	5	NUM
ajst-6855	2	2	,	,	PUNCT
ajst-6855	2	3	no	no	INTJ
ajst-6855	2	4	.	.	NOUN
ajst-6855	2	5	2	2	NUM
ajst-6855	2	6	,	,	PUNCT
ajst-6855	2	7	2023	2023	NUM
ajst-6855	2	8	158	158	NUM
ajst-6855	2	9	optimization	optimization	NOUN
ajst-6855	2	10	of	of	ADP
ajst-6855	2	11	sic	sic	ADJ
ajst-6855	2	12	cleaning	cleaning	NOUN
ajst-6855	2	13	process	process	NOUN
ajst-6855	2	14	based	base	VERB
ajst-6855	2	15	on	on	ADP
ajst-6855	2	16	zeta	zeta	PROPN
ajst-6855	2	17	potential	potential	ADJ
ajst-6855	2	18	ruocheng	ruocheng	PROPN
ajst-6855	2	19	gong1	gong1	PROPN
ajst-6855	2	20	,	,	PUNCT
ajst-6855	2	21	2	2	NUM
ajst-6855	2	22	,	,	PUNCT
ajst-6855	2	23	huaping	huape	VERB
ajst-6855	2	24	song2	song2	NOUN
ajst-6855	2	25	,	,	PUNCT
ajst-6855	2	26	*	*	PUNCT
ajst-6855	2	27	,	,	PUNCT
ajst-6855	2	28	junwei	junwei	PROPN
ajst-6855	2	29	yang2	yang2	PROPN
ajst-6855	2	30	,	,	PUNCT
ajst-6855	2	31	huan	huan	PROPN
ajst-6855	2	32	liu2	liu2	PROPN
ajst-6855	3	1	1school	1school	NUM
ajst-6855	3	2	of	of	ADP
ajst-6855	3	3	physics	physics	NOUN
ajst-6855	3	4	and	and	CCONJ
ajst-6855	3	5	optoelectronic	optoelectronic	ADJ
ajst-6855	3	6	engineering	engineering	NOUN
ajst-6855	3	7	,	,	PUNCT
ajst-6855	3	8	guangzhou	guangzhou	PROPN
ajst-6855	3	9	university	university	PROPN
ajst-6855	3	10	of	of	ADP
ajst-6855	3	11	technology	technology	PROPN
ajst-6855	3	12	,	,	PUNCT
ajst-6855	3	13	guangzhou	guangzhou	PROPN
ajst-6855	3	14	510006	510006	NUM
ajst-6855	3	15	,	,	PUNCT
ajst-6855	3	16	china	china	PROPN
ajst-6855	3	17	2songshan	2songshan	NUM
ajst-6855	3	18	lake	lake	NOUN
ajst-6855	3	19	materials	material	NOUN
ajst-6855	3	20	laboratory	laboratory	NOUN
ajst-6855	3	21	,	,	PUNCT
ajst-6855	3	22	dongguan	dongguan	PROPN
ajst-6855	3	23	,	,	PUNCT
ajst-6855	3	24	dongguan	dongguan	PROPN
ajst-6855	3	25	523808	523808	NUM
ajst-6855	3	26	,	,	PUNCT
ajst-6855	3	27	china	china	PROPN
ajst-6855	3	28	*	*	PUNCT
ajst-6855	3	29	corresponding	correspond	VERB
ajst-6855	3	30	author	author	NOUN
ajst-6855	3	31	:	:	PUNCT
ajst-6855	3	32	huaping	huape	VERB
ajst-6855	3	33	song	song	ADJ
ajst-6855	3	34	abstract	abstract	NOUN
ajst-6855	3	35	:	:	PUNCT
ajst-6855	3	36	this	this	PRON
ajst-6855	3	37	the	the	DET
ajst-6855	3	38	sic	sic	NOUN
ajst-6855	3	39	is	be	AUX
ajst-6855	3	40	a	a	DET
ajst-6855	3	41	polar	polar	ADJ
ajst-6855	3	42	semiconductor	semiconductor	NOUN
ajst-6855	3	43	that	that	PRON
ajst-6855	3	44	is	be	AUX
ajst-6855	3	45	easy	easy	ADJ
ajst-6855	3	46	to	to	PART
ajst-6855	3	47	adsorb	adsorb	VERB
ajst-6855	3	48	particles	particle	NOUN
ajst-6855	3	49	due	due	ADP
ajst-6855	3	50	to	to	ADP
ajst-6855	3	51	the	the	DET
ajst-6855	3	52	surface	surface	NOUN
ajst-6855	3	53	charges	charge	NOUN
ajst-6855	3	54	,	,	PUNCT
ajst-6855	3	55	which	which	PRON
ajst-6855	3	56	results	result	VERB
ajst-6855	3	57	in	in	ADP
ajst-6855	3	58	that	that	SCONJ
ajst-6855	3	59	the	the	DET
ajst-6855	3	60	rca	rca	PROPN
ajst-6855	3	61	process	process	NOUN
ajst-6855	3	62	commonly	commonly	ADV
ajst-6855	3	63	used	use	VERB
ajst-6855	3	64	for	for	ADP
ajst-6855	3	65	silicon	silicon	NOUN
ajst-6855	3	66	cleaning	cleaning	NOUN
ajst-6855	3	67	is	be	AUX
ajst-6855	3	68	not	not	PART
ajst-6855	3	69	good	good	ADJ
ajst-6855	3	70	for	for	ADP
ajst-6855	3	71	sic	sic	ADJ
ajst-6855	3	72	cleaning	cleaning	NOUN
ajst-6855	3	73	,	,	PUNCT
ajst-6855	3	74	and	and	CCONJ
ajst-6855	3	75	the	the	DET
ajst-6855	3	76	technique	technique	NOUN
ajst-6855	3	77	should	should	AUX
ajst-6855	3	78	be	be	AUX
ajst-6855	3	79	optimized	optimize	VERB
ajst-6855	3	80	.	.	PUNCT
ajst-6855	4	1	to	to	PART
ajst-6855	4	2	check	check	VERB
ajst-6855	4	3	the	the	DET
ajst-6855	4	4	surface	surface	NOUN
ajst-6855	4	5	charge	charge	NOUN
ajst-6855	4	6	of	of	ADP
ajst-6855	4	7	sic	sic	ADJ
ajst-6855	4	8	wafers	wafer	NOUN
ajst-6855	4	9	during	during	ADP
ajst-6855	4	10	the	the	DET
ajst-6855	4	11	cleaning	cleaning	NOUN
ajst-6855	4	12	process	process	NOUN
ajst-6855	4	13	,	,	PUNCT
ajst-6855	4	14	this	this	DET
ajst-6855	4	15	work	work	NOUN
ajst-6855	4	16	investigated	investigate	VERB
ajst-6855	4	17	the	the	DET
ajst-6855	4	18	adsorption	adsorption	NOUN
ajst-6855	4	19	of	of	ADP
ajst-6855	4	20	polystyrene	polystyrene	NOUN
ajst-6855	4	21	spheres	sphere	NOUN
ajst-6855	4	22	(	(	PUNCT
ajst-6855	4	23	ps	ps	NOUN
ajst-6855	4	24	)	)	PUNCT
ajst-6855	4	25	on	on	ADP
ajst-6855	4	26	sic	sic	ADJ
ajst-6855	4	27	epitaxial	epitaxial	ADJ
ajst-6855	4	28	wafers	wafer	NOUN
ajst-6855	4	29	at	at	ADP
ajst-6855	4	30	different	different	ADJ
ajst-6855	4	31	ph	ph	ADJ
ajst-6855	4	32	values	value	NOUN
ajst-6855	4	33	and	and	CCONJ
ajst-6855	4	34	measured	measure	VERB
ajst-6855	4	35	the	the	DET
ajst-6855	4	36	zeta	zeta	NOUN
ajst-6855	4	37	potential	potential	NOUN
ajst-6855	4	38	of	of	ADP
ajst-6855	4	39	the	the	DET
ajst-6855	4	40	sic	sic	ADJ
ajst-6855	4	41	wafers	wafer	NOUN
ajst-6855	4	42	.	.	PUNCT
ajst-6855	5	1	we	we	PRON
ajst-6855	5	2	analyzed	analyze	VERB
ajst-6855	5	3	the	the	DET
ajst-6855	5	4	mechanisms	mechanism	NOUN
ajst-6855	5	5	by	by	ADP
ajst-6855	5	6	which	which	PRON
ajst-6855	5	7	the	the	DET
ajst-6855	5	8	zeta	zeta	PROPN
ajst-6855	5	9	potential	potential	NOUN
ajst-6855	5	10	in	in	ADP
ajst-6855	5	11	alkaline	alkaline	NOUN
ajst-6855	5	12	(	(	PUNCT
ajst-6855	5	13	sc1	sc1	NOUN
ajst-6855	5	14	)	)	PUNCT
ajst-6855	5	15	and	and	CCONJ
ajst-6855	5	16	acidic	acidic	ADJ
ajst-6855	5	17	(	(	PUNCT
ajst-6855	5	18	sc2	sc2	NOUN
ajst-6855	5	19	)	)	PUNCT
ajst-6855	5	20	cleaning	clean	VERB
ajst-6855	5	21	solutions	solution	NOUN
ajst-6855	5	22	affects	affect	VERB
ajst-6855	5	23	the	the	DET
ajst-6855	5	24	adsorption	adsorption	NOUN
ajst-6855	5	25	of	of	ADP
ajst-6855	5	26	particles	particle	NOUN
ajst-6855	5	27	on	on	ADP
ajst-6855	5	28	sic	sic	ADJ
ajst-6855	5	29	epitaxial	epitaxial	ADJ
ajst-6855	5	30	wafers	wafer	NOUN
ajst-6855	5	31	surface	surface	NOUN
ajst-6855	5	32	.	.	PUNCT
ajst-6855	6	1	the	the	DET
ajst-6855	6	2	results	result	NOUN
ajst-6855	6	3	showed	show	VERB
ajst-6855	6	4	that	that	SCONJ
ajst-6855	6	5	both	both	CCONJ
ajst-6855	6	6	the	the	DET
ajst-6855	6	7	sic	sic	ADJ
ajst-6855	6	8	epitaxial	epitaxial	ADJ
ajst-6855	6	9	wafers	wafer	NOUN
ajst-6855	6	10	and	and	CCONJ
ajst-6855	6	11	the	the	DET
ajst-6855	6	12	particles	particle	NOUN
ajst-6855	6	13	had	have	VERB
ajst-6855	6	14	a	a	DET
ajst-6855	6	15	negative	negative	ADJ
ajst-6855	6	16	zeta	zeta	NOUN
ajst-6855	6	17	potential	potential	NOUN
ajst-6855	6	18	in	in	ADP
ajst-6855	6	19	the	the	DET
ajst-6855	6	20	sc1	sc1	NOUN
ajst-6855	6	21	cleaning	cleaning	NOUN
ajst-6855	6	22	solution	solution	NOUN
ajst-6855	6	23	and	and	CCONJ
ajst-6855	6	24	there	there	PRON
ajst-6855	6	25	was	be	VERB
ajst-6855	6	26	an	an	DET
ajst-6855	6	27	electrostatic	electrostatic	ADJ
ajst-6855	6	28	repulsion	repulsion	NOUN
ajst-6855	6	29	between	between	ADP
ajst-6855	6	30	them	they	PRON
ajst-6855	6	31	.	.	PUNCT
ajst-6855	7	1	in	in	ADP
ajst-6855	7	2	contrast	contrast	NOUN
ajst-6855	7	3	,	,	PUNCT
ajst-6855	7	4	in	in	ADP
ajst-6855	7	5	the	the	DET
ajst-6855	7	6	sc2	sc2	NOUN
ajst-6855	7	7	cleaning	cleaning	NOUN
ajst-6855	7	8	solution	solution	NOUN
ajst-6855	7	9	,	,	PUNCT
ajst-6855	7	10	the	the	DET
ajst-6855	7	11	sic	sic	ADJ
ajst-6855	7	12	epitaxial	epitaxial	ADJ
ajst-6855	7	13	wafers	wafer	NOUN
ajst-6855	7	14	and	and	CCONJ
ajst-6855	7	15	particles	particle	NOUN
ajst-6855	7	16	had	have	VERB
ajst-6855	7	17	opposite	opposite	ADJ
ajst-6855	7	18	zeta	zeta	NOUN
ajst-6855	7	19	potentials	potential	NOUN
ajst-6855	7	20	,	,	PUNCT
ajst-6855	7	21	which	which	PRON
ajst-6855	7	22	caused	cause	VERB
ajst-6855	7	23	attraction	attraction	NOUN
ajst-6855	7	24	between	between	ADP
ajst-6855	7	25	the	the	DET
ajst-6855	7	26	wafers	wafer	NOUN
ajst-6855	7	27	and	and	CCONJ
ajst-6855	7	28	particles	particle	NOUN
ajst-6855	7	29	.	.	PUNCT
ajst-6855	8	1	therefore	therefore	ADV
ajst-6855	8	2	,	,	PUNCT
ajst-6855	8	3	based	base	VERB
ajst-6855	8	4	on	on	ADP
ajst-6855	8	5	the	the	DET
ajst-6855	8	6	analysis	analysis	NOUN
ajst-6855	8	7	of	of	ADP
ajst-6855	8	8	zeta	zeta	PROPN
ajst-6855	8	9	potential	potential	NOUN
ajst-6855	8	10	,	,	PUNCT
ajst-6855	8	11	we	we	PRON
ajst-6855	8	12	proposed	propose	VERB
ajst-6855	8	13	an	an	DET
ajst-6855	8	14	optimized	optimize	VERB
ajst-6855	8	15	the	the	DET
ajst-6855	8	16	sic	sic	ADJ
ajst-6855	8	17	cleaning	cleaning	NOUN
ajst-6855	8	18	process	process	NOUN
ajst-6855	8	19	that	that	PRON
ajst-6855	8	20	use	use	VERB
ajst-6855	8	21	sc2	sc2	NOUN
ajst-6855	8	22	cleaning	cleaning	NOUN
ajst-6855	8	23	before	before	ADP
ajst-6855	8	24	sc1	sc1	NOUN
ajst-6855	8	25	cleaning	cleaning	NOUN
ajst-6855	8	26	.	.	PUNCT
ajst-6855	9	1	we	we	PRON
ajst-6855	9	2	successfully	successfully	ADV
ajst-6855	9	3	reduced	reduce	VERB
ajst-6855	9	4	the	the	DET
ajst-6855	9	5	number	number	NOUN
ajst-6855	9	6	of	of	ADP
ajst-6855	9	7	particles	particle	NOUN
ajst-6855	9	8	attached	attach	VERB
ajst-6855	9	9	to	to	ADP
ajst-6855	9	10	the	the	DET
ajst-6855	9	11	surface	surface	NOUN
ajst-6855	9	12	of	of	ADP
ajst-6855	9	13	sic	sic	ADJ
ajst-6855	9	14	epitaxial	epitaxial	ADJ
ajst-6855	9	15	wafers	wafer	NOUN
ajst-6855	9	16	by	by	ADP
ajst-6855	9	17	80.4	80.4	NUM
ajst-6855	9	18	%	%	NOUN
ajst-6855	9	19	than	than	ADP
ajst-6855	9	20	rca	rca	NOUN
ajst-6855	9	21	cleaning	cleaning	NOUN
ajst-6855	9	22	process	process	NOUN
ajst-6855	9	23	by	by	ADP
ajst-6855	9	24	the	the	DET
ajst-6855	9	25	optimized	optimize	VERB
ajst-6855	9	26	cleaning	cleaning	NOUN
ajst-6855	9	27	process	process	NOUN
ajst-6855	9	28	.	.	PUNCT
ajst-6855	10	1	the	the	DET
ajst-6855	10	2	optimized	optimize	VERB
ajst-6855	10	3	cleaning	cleaning	NOUN
ajst-6855	10	4	process	process	NOUN
ajst-6855	10	5	would	would	AUX
ajst-6855	10	6	have	have	VERB
ajst-6855	10	7	a	a	DET
ajst-6855	10	8	practical	practical	ADJ
ajst-6855	10	9	value	value	NOUN
ajst-6855	10	10	due	due	ADP
ajst-6855	10	11	to	to	ADP
ajst-6855	10	12	the	the	DET
ajst-6855	10	13	reduction	reduction	NOUN
ajst-6855	10	14	on	on	ADP
ajst-6855	10	15	the	the	DET
ajst-6855	10	16	consumption	consumption	NOUN
ajst-6855	10	17	of	of	ADP
ajst-6855	10	18	time	time	NOUN
ajst-6855	10	19	and	and	CCONJ
ajst-6855	10	20	chemical	chemical	NOUN
ajst-6855	10	21	reagents	reagent	NOUN
ajst-6855	10	22	.	.	PUNCT
ajst-6855	11	1	keywords	keyword	NOUN
ajst-6855	11	2	:	:	PUNCT
ajst-6855	11	3	silicon	silicon	PROPN
ajst-6855	11	4	carbide	carbide	PROPN
ajst-6855	11	5	,	,	PUNCT
ajst-6855	11	6	zeta	zeta	NOUN
ajst-6855	11	7	potential	potential	NOUN
ajst-6855	11	8	,	,	PUNCT
ajst-6855	11	9	wafer	wafer	NOUN
ajst-6855	11	10	cleaning	cleaning	NOUN
ajst-6855	11	11	,	,	PUNCT
ajst-6855	11	12	rca	rca	NOUN
ajst-6855	11	13	process	process	NOUN
ajst-6855	11	14	,	,	PUNCT
ajst-6855	11	15	particle	particle	NOUN
ajst-6855	11	16	contamination	contamination	NOUN
ajst-6855	11	17	.	.	PUNCT
ajst-6855	12	1	1	1	X
ajst-6855	12	2	.	.	X
ajst-6855	12	3	introduction	introduction	NOUN
ajst-6855	12	4	silicon	silicon	NOUN
ajst-6855	12	5	carbide	carbide	NOUN
ajst-6855	12	6	(	(	PUNCT
ajst-6855	12	7	sic	sic	ADJ
ajst-6855	12	8	)	)	PUNCT
ajst-6855	12	9	is	be	AUX
ajst-6855	12	10	an	an	DET
ajst-6855	12	11	exemplary	exemplary	ADJ
ajst-6855	12	12	wide	wide	ADJ
ajst-6855	12	13	bandgap	bandgap	NOUN
ajst-6855	12	14	semiconductor	semiconductor	NOUN
ajst-6855	12	15	material	material	NOUN
ajst-6855	12	16	that	that	PRON
ajst-6855	12	17	possesses	possess	VERB
ajst-6855	12	18	excellent	excellent	ADJ
ajst-6855	12	19	characteristics	characteristic	NOUN
ajst-6855	12	20	such	such	ADJ
ajst-6855	12	21	as	as	ADP
ajst-6855	12	22	high	high	ADJ
ajst-6855	12	23	breakdown	breakdown	NOUN
ajst-6855	12	24	voltage	voltage	NOUN
ajst-6855	12	25	,	,	PUNCT
ajst-6855	12	26	high	high	ADJ
ajst-6855	12	27	saturation	saturation	NOUN
ajst-6855	12	28	electron	electron	NOUN
ajst-6855	12	29	drift	drift	NOUN
ajst-6855	12	30	velocity	velocity	NOUN
ajst-6855	12	31	,	,	PUNCT
ajst-6855	12	32	high	high	ADJ
ajst-6855	12	33	thermal	thermal	ADJ
ajst-6855	12	34	conductivity	conductivity	NOUN
ajst-6855	12	35	,	,	PUNCT
ajst-6855	12	36	and	and	CCONJ
ajst-6855	12	37	high	high	ADJ
ajst-6855	12	38	thermal	thermal	ADJ
ajst-6855	12	39	stability[1	stability[1	NOUN
ajst-6855	12	40	]	]	PUNCT
ajst-6855	12	41	.	.	PUNCT
ajst-6855	13	1	it	it	PRON
ajst-6855	13	2	is	be	AUX
ajst-6855	13	3	an	an	DET
ajst-6855	13	4	ideal	ideal	ADJ
ajst-6855	13	5	material	material	NOUN
ajst-6855	13	6	for	for	ADP
ajst-6855	13	7	manufacturing	manufacture	VERB
ajst-6855	13	8	high	high	ADJ
ajst-6855	13	9	-	-	PUNCT
ajst-6855	13	10	power	power	NOUN
ajst-6855	13	11	electronic	electronic	ADJ
ajst-6855	13	12	devices	device	NOUN
ajst-6855	13	13	.	.	PUNCT
ajst-6855	14	1	as	as	ADP
ajst-6855	14	2	a	a	DET
ajst-6855	14	3	polar	polar	ADJ
ajst-6855	14	4	semiconductor	semiconductor	NOUN
ajst-6855	14	5	,	,	PUNCT
ajst-6855	14	6	sic	sic	ADJ
ajst-6855	14	7	is	be	AUX
ajst-6855	14	8	prone	prone	ADJ
ajst-6855	14	9	to	to	ADP
ajst-6855	14	10	adsorption	adsorption	NOUN
ajst-6855	14	11	of	of	ADP
ajst-6855	14	12	contaminating	contaminate	VERB
ajst-6855	14	13	particles	particle	NOUN
ajst-6855	14	14	due	due	ADP
ajst-6855	14	15	to	to	ADP
ajst-6855	14	16	its	its	PRON
ajst-6855	14	17	charged	charge	VERB
ajst-6855	14	18	surface[2	surface[2	PROPN
ajst-6855	14	19	]	]	PUNCT
ajst-6855	14	20	.	.	PUNCT
ajst-6855	15	1	these	these	DET
ajst-6855	15	2	particles	particle	NOUN
ajst-6855	15	3	may	may	AUX
ajst-6855	15	4	cause	cause	VERB
ajst-6855	15	5	problems	problem	NOUN
ajst-6855	15	6	such	such	ADJ
ajst-6855	15	7	as	as	ADP
ajst-6855	15	8	circuit	circuit	NOUN
ajst-6855	15	9	interruption	interruption	NOUN
ajst-6855	15	10	or	or	CCONJ
ajst-6855	15	11	short	short	ADV
ajst-6855	15	12	-	-	PUNCT
ajst-6855	15	13	circuiting	circuiting	NOUN
ajst-6855	15	14	in	in	ADP
ajst-6855	15	15	subsequent	subsequent	ADJ
ajst-6855	15	16	device	device	NOUN
ajst-6855	15	17	manufacturing[3	manufacturing[3	PROPN
ajst-6855	15	18	]	]	PUNCT
ajst-6855	15	19	,	,	PUNCT
ajst-6855	15	20	which	which	PRON
ajst-6855	15	21	can	can	AUX
ajst-6855	15	22	further	far	ADV
ajst-6855	15	23	affect	affect	VERB
ajst-6855	15	24	the	the	DET
ajst-6855	15	25	manufacturing	manufacturing	NOUN
ajst-6855	15	26	yield	yield	NOUN
ajst-6855	15	27	and	and	CCONJ
ajst-6855	15	28	stability	stability	NOUN
ajst-6855	15	29	of	of	ADP
ajst-6855	15	30	the	the	DET
ajst-6855	15	31	devices[4	devices[4	NOUN
ajst-6855	15	32	]	]	X
ajst-6855	15	33	.	.	PUNCT
ajst-6855	16	1	therefore	therefore	ADV
ajst-6855	16	2	,	,	PUNCT
ajst-6855	16	3	developing	develop	VERB
ajst-6855	16	4	effective	effective	ADJ
ajst-6855	16	5	cleaning	cleaning	NOUN
ajst-6855	16	6	processes	process	NOUN
ajst-6855	16	7	is	be	AUX
ajst-6855	16	8	crucial	crucial	ADJ
ajst-6855	16	9	in	in	ADP
ajst-6855	16	10	sic	sic	ADJ
ajst-6855	16	11	semiconductor	semiconductor	NOUN
ajst-6855	16	12	manufacturing[5	manufacturing[5	PROPN
ajst-6855	16	13	]	]	PUNCT
ajst-6855	16	14	.	.	PUNCT
ajst-6855	17	1	domestic	domestic	ADJ
ajst-6855	17	2	and	and	CCONJ
ajst-6855	17	3	foreign	foreign	ADJ
ajst-6855	17	4	scholars	scholar	NOUN
ajst-6855	17	5	have	have	AUX
ajst-6855	17	6	conducted	conduct	VERB
ajst-6855	17	7	extensive	extensive	ADJ
ajst-6855	17	8	research	research	NOUN
ajst-6855	17	9	on	on	ADP
ajst-6855	17	10	the	the	DET
ajst-6855	17	11	cleaning	cleaning	NOUN
ajst-6855	17	12	process	process	NOUN
ajst-6855	17	13	of	of	ADP
ajst-6855	17	14	sic	sic	ADJ
ajst-6855	17	15	materials	material	NOUN
ajst-6855	17	16	for	for	ADP
ajst-6855	17	17	a	a	DET
ajst-6855	17	18	long	long	ADJ
ajst-6855	17	19	time	time	NOUN
ajst-6855	17	20	.	.	PUNCT
ajst-6855	18	1	based	base	VERB
ajst-6855	18	2	on	on	ADP
ajst-6855	18	3	the	the	DET
ajst-6855	18	4	cleaning	cleaning	NOUN
ajst-6855	18	5	environment	environment	NOUN
ajst-6855	18	6	,	,	PUNCT
ajst-6855	18	7	it	it	PRON
ajst-6855	18	8	can	can	AUX
ajst-6855	18	9	be	be	AUX
ajst-6855	18	10	divided	divide	VERB
ajst-6855	18	11	into	into	ADP
ajst-6855	18	12	dry	dry	ADJ
ajst-6855	18	13	cleaning	cleaning	NOUN
ajst-6855	18	14	and	and	CCONJ
ajst-6855	18	15	wet	wet	ADJ
ajst-6855	18	16	cleaning	cleaning	NOUN
ajst-6855	18	17	.	.	PUNCT
ajst-6855	19	1	among	among	ADP
ajst-6855	19	2	these	these	PRON
ajst-6855	19	3	,	,	PUNCT
ajst-6855	19	4	the	the	DET
ajst-6855	19	5	research	research	NOUN
ajst-6855	19	6	on	on	ADP
ajst-6855	19	7	dry	dry	ADJ
ajst-6855	19	8	cleaning	cleaning	NOUN
ajst-6855	19	9	processes	process	NOUN
ajst-6855	19	10	mainly	mainly	ADV
ajst-6855	19	11	includes	include	VERB
ajst-6855	19	12	the	the	DET
ajst-6855	19	13	following	follow	VERB
ajst-6855	19	14	:	:	PUNCT
ajst-6855	19	15	guan	guan	PROPN
ajst-6855	19	16	et	et	NOUN
ajst-6855	19	17	al[6	al[6	PROPN
ajst-6855	19	18	]	]	PUNCT
ajst-6855	19	19	.	.	PUNCT
ajst-6855	20	1	proposed	propose	VERB
ajst-6855	20	2	a	a	DET
ajst-6855	20	3	two	two	NUM
ajst-6855	20	4	-	-	PUNCT
ajst-6855	20	5	step	step	NOUN
ajst-6855	20	6	method	method	NOUN
ajst-6855	20	7	that	that	PRON
ajst-6855	20	8	involved	involve	VERB
ajst-6855	20	9	h2	h2	NOUN
ajst-6855	20	10	:	:	PUNCT
ajst-6855	20	11	he	he	PRON
ajst-6855	20	12	(	(	PUNCT
ajst-6855	20	13	1:1	1:1	X
ajst-6855	20	14	)	)	PUNCT
ajst-6855	20	15	plasma	plasma	NOUN
ajst-6855	20	16	treatment	treatment	NOUN
ajst-6855	20	17	and	and	CCONJ
ajst-6855	20	18	heating	heating	NOUN
ajst-6855	20	19	at	at	ADP
ajst-6855	20	20	a	a	DET
ajst-6855	20	21	temperature	temperature	NOUN
ajst-6855	20	22	below	below	ADP
ajst-6855	20	23	1000	1000	NUM
ajst-6855	20	24	℃	℃	PROPN
ajst-6855	20	25	to	to	PART
ajst-6855	20	26	obtain	obtain	VERB
ajst-6855	20	27	a	a	DET
ajst-6855	20	28	clean	clean	ADJ
ajst-6855	20	29	c	c	NOUN
ajst-6855	20	30	-	-	PUNCT
ajst-6855	20	31	terminated	terminate	VERB
ajst-6855	20	32	sic	sic	ADJ
ajst-6855	20	33	surface	surface	NOUN
ajst-6855	20	34	.	.	PUNCT
ajst-6855	21	1	huang	huang	PROPN
ajst-6855	21	2	et	et	PROPN
ajst-6855	21	3	al[7	al[7	PROPN
ajst-6855	21	4	]	]	PUNCT
ajst-6855	21	5	.	.	PUNCT
ajst-6855	21	6	proposed	propose	VERB
ajst-6855	21	7	an	an	DET
ajst-6855	21	8	electron	electron	NOUN
ajst-6855	21	9	cyclotron	cyclotron	NOUN
ajst-6855	21	10	resonance	resonance	NOUN
ajst-6855	21	11	hydrogen	hydrogen	NOUN
ajst-6855	21	12	plasma	plasma	NOUN
ajst-6855	21	13	cleaning	cleaning	NOUN
ajst-6855	21	14	method	method	NOUN
ajst-6855	21	15	,	,	PUNCT
ajst-6855	21	16	which	which	PRON
ajst-6855	21	17	can	can	AUX
ajst-6855	21	18	achieve	achieve	VERB
ajst-6855	21	19	an	an	DET
ajst-6855	21	20	atomically	atomically	ADV
ajst-6855	21	21	flat	flat	ADJ
ajst-6855	21	22	and	and	CCONJ
ajst-6855	21	23	clean	clean	ADJ
ajst-6855	21	24	unreconstructed	unreconstructed	ADJ
ajst-6855	21	25	surface	surface	NOUN
ajst-6855	21	26	after	after	ADP
ajst-6855	21	27	5	5	NUM
ajst-6855	21	28	minutes	minute	NOUN
ajst-6855	21	29	of	of	ADP
ajst-6855	21	30	treatment	treatment	NOUN
ajst-6855	21	31	at	at	ADP
ajst-6855	21	32	a	a	DET
ajst-6855	21	33	low	low	ADJ
ajst-6855	21	34	temperature	temperature	NOUN
ajst-6855	21	35	(	(	PUNCT
ajst-6855	21	36	200	200	NUM
ajst-6855	21	37	-	-	SYM
ajst-6855	21	38	700	700	NUM
ajst-6855	21	39	℃	℃	PROPN
ajst-6855	21	40	)	)	PUNCT
ajst-6855	21	41	.	.	PUNCT
ajst-6855	22	1	losurdo	losurdo	PROPN
ajst-6855	22	2	et	et	PROPN
ajst-6855	22	3	al[8	al[8	PROPN
ajst-6855	22	4	]	]	PUNCT
ajst-6855	22	5	.	.	PUNCT
ajst-6855	22	6	found	find	VERB
ajst-6855	22	7	that	that	SCONJ
ajst-6855	22	8	a	a	DET
ajst-6855	22	9	clean	clean	ADJ
ajst-6855	22	10	sic	sic	ADJ
ajst-6855	22	11	surface	surface	NOUN
ajst-6855	22	12	can	can	AUX
ajst-6855	22	13	be	be	AUX
ajst-6855	22	14	obtained	obtain	VERB
ajst-6855	22	15	by	by	ADP
ajst-6855	22	16	treating	treat	VERB
ajst-6855	22	17	sic	sic	ADJ
ajst-6855	22	18	material	material	NOUN
ajst-6855	22	19	with	with	ADP
ajst-6855	22	20	atomic	atomic	ADJ
ajst-6855	22	21	hydrogen	hydrogen	NOUN
ajst-6855	22	22	at	at	ADP
ajst-6855	22	23	200	200	NUM
ajst-6855	22	24	℃	℃	PROPN
ajst-6855	22	25	.	.	NOUN
ajst-6855	22	26	dry	dry	ADJ
ajst-6855	22	27	cleaning	cleaning	NOUN
ajst-6855	22	28	has	have	VERB
ajst-6855	22	29	strict	strict	ADJ
ajst-6855	22	30	environmental	environmental	ADJ
ajst-6855	22	31	conditions	condition	NOUN
ajst-6855	22	32	and	and	CCONJ
ajst-6855	22	33	low	low	ADJ
ajst-6855	22	34	production	production	NOUN
ajst-6855	22	35	efficiency	efficiency	NOUN
ajst-6855	22	36	,	,	PUNCT
ajst-6855	22	37	which	which	PRON
ajst-6855	22	38	limits	limit	VERB
ajst-6855	22	39	its	its	PRON
ajst-6855	22	40	widespread	widespread	ADJ
ajst-6855	22	41	use	use	NOUN
ajst-6855	22	42	in	in	ADP
ajst-6855	22	43	sic	sic	ADJ
ajst-6855	22	44	material	material	NOUN
ajst-6855	22	45	cleaning	cleaning	NOUN
ajst-6855	22	46	.	.	PUNCT
ajst-6855	23	1	in	in	ADP
ajst-6855	23	2	contrast	contrast	NOUN
ajst-6855	23	3	,	,	PUNCT
ajst-6855	23	4	wet	wet	ADJ
ajst-6855	23	5	cleaning	cleaning	NOUN
ajst-6855	23	6	has	have	VERB
ajst-6855	23	7	lower	low	ADJ
ajst-6855	23	8	temperature	temperature	NOUN
ajst-6855	23	9	requirements	requirement	NOUN
ajst-6855	23	10	and	and	CCONJ
ajst-6855	23	11	can	can	AUX
ajst-6855	23	12	be	be	AUX
ajst-6855	23	13	carried	carry	VERB
ajst-6855	23	14	out	out	ADP
ajst-6855	23	15	under	under	ADP
ajst-6855	23	16	atmospheric	atmospheric	ADJ
ajst-6855	23	17	pressure	pressure	NOUN
ajst-6855	23	18	.	.	PUNCT
ajst-6855	24	1	moreover	moreover	ADV
ajst-6855	24	2	,	,	PUNCT
ajst-6855	24	3	it	it	PRON
ajst-6855	24	4	can	can	AUX
ajst-6855	24	5	clean	clean	VERB
ajst-6855	24	6	multiple	multiple	ADJ
ajst-6855	24	7	wafers	wafer	NOUN
ajst-6855	24	8	simultaneously	simultaneously	ADV
ajst-6855	24	9	,	,	PUNCT
ajst-6855	24	10	making	make	VERB
ajst-6855	24	11	it	it	PRON
ajst-6855	24	12	the	the	DET
ajst-6855	24	13	mainstream	mainstream	NOUN
ajst-6855	24	14	technology	technology	NOUN
ajst-6855	24	15	for	for	ADP
ajst-6855	24	16	sic	sic	ADJ
ajst-6855	24	17	cleaning	cleaning	NOUN
ajst-6855	24	18	in	in	ADP
ajst-6855	24	19	industrial	industrial	ADJ
ajst-6855	24	20	production[9	production[9	ADV
ajst-6855	24	21	]	]	PUNCT
ajst-6855	24	22	.	.	PUNCT
ajst-6855	25	1	the	the	DET
ajst-6855	25	2	wet	wet	ADJ
ajst-6855	25	3	cleaning	cleaning	NOUN
ajst-6855	25	4	process	process	NOUN
ajst-6855	25	5	commonly	commonly	ADV
ajst-6855	25	6	used	use	VERB
ajst-6855	25	7	in	in	ADP
ajst-6855	25	8	the	the	DET
ajst-6855	25	9	sic	sic	ADJ
ajst-6855	25	10	industry	industry	NOUN
ajst-6855	25	11	originates	originate	NOUN
ajst-6855	25	12	from	from	ADP
ajst-6855	25	13	the	the	DET
ajst-6855	25	14	standard	standard	ADJ
ajst-6855	25	15	rca	rca	ADJ
ajst-6855	25	16	cleaning	cleaning	NOUN
ajst-6855	25	17	method	method	NOUN
ajst-6855	25	18	for	for	ADP
ajst-6855	25	19	silicon	silicon	NOUN
ajst-6855	25	20	(	(	PUNCT
ajst-6855	25	21	si	si	NOUN
ajst-6855	25	22	)	)	PUNCT
ajst-6855	25	23	.	.	PUNCT
ajst-6855	26	1	the	the	DET
ajst-6855	26	2	spm	spm	PROPN
ajst-6855	26	3	(	(	PUNCT
ajst-6855	26	4	mixture	mixture	NOUN
ajst-6855	26	5	of	of	ADP
ajst-6855	26	6	concentrated	concentrated	ADJ
ajst-6855	26	7	sulfuric	sulfuric	ADJ
ajst-6855	26	8	acid	acid	NOUN
ajst-6855	26	9	and	and	CCONJ
ajst-6855	26	10	hydrogen	hydrogen	NOUN
ajst-6855	26	11	peroxide	peroxide	NOUN
ajst-6855	26	12	)	)	PUNCT
ajst-6855	26	13	cleaning	cleaning	NOUN
ajst-6855	26	14	solution	solution	NOUN
ajst-6855	26	15	is	be	AUX
ajst-6855	26	16	primarily	primarily	ADV
ajst-6855	26	17	used	use	VERB
ajst-6855	26	18	to	to	PART
ajst-6855	26	19	remove	remove	VERB
ajst-6855	26	20	organic	organic	ADJ
ajst-6855	26	21	contaminants	contaminant	NOUN
ajst-6855	26	22	,	,	PUNCT
ajst-6855	26	23	while	while	SCONJ
ajst-6855	26	24	the	the	DET
ajst-6855	26	25	sc1	sc1	PROPN
ajst-6855	26	26	(	(	PUNCT
ajst-6855	26	27	mixture	mixture	NOUN
ajst-6855	26	28	of	of	ADP
ajst-6855	26	29	ammonia	ammonia	NOUN
ajst-6855	26	30	,	,	PUNCT
ajst-6855	26	31	hydrogen	hydrogen	NOUN
ajst-6855	26	32	peroxide	peroxide	NOUN
ajst-6855	26	33	,	,	PUNCT
ajst-6855	26	34	and	and	CCONJ
ajst-6855	26	35	di	di	NOUN
ajst-6855	26	36	water	water	NOUN
ajst-6855	26	37	)	)	PUNCT
ajst-6855	26	38	cleaning	cleaning	NOUN
ajst-6855	26	39	solution	solution	NOUN
ajst-6855	26	40	is	be	AUX
ajst-6855	26	41	mainly	mainly	ADV
ajst-6855	26	42	used	use	VERB
ajst-6855	26	43	to	to	PART
ajst-6855	26	44	eliminate	eliminate	VERB
ajst-6855	26	45	particle	particle	NOUN
ajst-6855	26	46	contamination	contamination	NOUN
ajst-6855	26	47	and	and	CCONJ
ajst-6855	26	48	a	a	DET
ajst-6855	26	49	small	small	ADJ
ajst-6855	26	50	amount	amount	NOUN
ajst-6855	26	51	of	of	ADP
ajst-6855	26	52	metal	metal	NOUN
ajst-6855	26	53	ion	ion	NOUN
ajst-6855	26	54	contamination	contamination	NOUN
ajst-6855	26	55	.	.	PUNCT
ajst-6855	27	1	the	the	DET
ajst-6855	27	2	sc2	sc2	NOUN
ajst-6855	27	3	(	(	PUNCT
ajst-6855	27	4	mixture	mixture	NOUN
ajst-6855	27	5	of	of	ADP
ajst-6855	27	6	hydrochloric	hydrochloric	ADJ
ajst-6855	27	7	acid	acid	NOUN
ajst-6855	27	8	,	,	PUNCT
ajst-6855	27	9	hydrogen	hydrogen	NOUN
ajst-6855	27	10	peroxide	peroxide	NOUN
ajst-6855	27	11	,	,	PUNCT
ajst-6855	27	12	and	and	CCONJ
ajst-6855	27	13	di	di	NOUN
ajst-6855	27	14	water	water	NOUN
ajst-6855	27	15	)	)	PUNCT
ajst-6855	27	16	cleaning	cleaning	NOUN
ajst-6855	27	17	solution	solution	NOUN
ajst-6855	27	18	is	be	AUX
ajst-6855	27	19	primarily	primarily	ADV
ajst-6855	27	20	used	use	VERB
ajst-6855	27	21	to	to	PART
ajst-6855	27	22	remove	remove	VERB
ajst-6855	27	23	metal	metal	NOUN
ajst-6855	27	24	ion	ion	NOUN
ajst-6855	27	25	contamination[10	contamination[10	NOUN
ajst-6855	27	26	]	]	PUNCT
ajst-6855	27	27	.	.	PUNCT
ajst-6855	28	1	however	however	ADV
ajst-6855	28	2	,	,	PUNCT
ajst-6855	28	3	the	the	DET
ajst-6855	28	4	rca	rca	NOUN
ajst-6855	28	5	cleaning	cleaning	NOUN
ajst-6855	28	6	process	process	NOUN
ajst-6855	28	7	of	of	ADP
ajst-6855	28	8	silicon	silicon	NOUN
ajst-6855	28	9	carbide	carbide	NOUN
ajst-6855	28	10	still	still	ADV
ajst-6855	28	11	faces	face	VERB
ajst-6855	28	12	various	various	ADJ
ajst-6855	28	13	issues	issue	NOUN
ajst-6855	28	14	,	,	PUNCT
ajst-6855	28	15	including	include	VERB
ajst-6855	28	16	susceptibility	susceptibility	NOUN
ajst-6855	28	17	to	to	ADP
ajst-6855	28	18	the	the	DET
ajst-6855	28	19	influence	influence	NOUN
ajst-6855	28	20	of	of	ADP
ajst-6855	28	21	equipment	equipment	NOUN
ajst-6855	28	22	and	and	CCONJ
ajst-6855	28	23	operators	operator	NOUN
ajst-6855	28	24	,	,	PUNCT
ajst-6855	28	25	excessive	excessive	ADJ
ajst-6855	28	26	use	use	NOUN
ajst-6855	28	27	of	of	ADP
ajst-6855	28	28	chemical	chemical	ADJ
ajst-6855	28	29	agents	agent	NOUN
ajst-6855	28	30	,	,	PUNCT
ajst-6855	28	31	generation	generation	NOUN
ajst-6855	28	32	of	of	ADP
ajst-6855	28	33	excessive	excessive	ADJ
ajst-6855	28	34	wastewater	wastewater	NOUN
ajst-6855	28	35	,	,	PUNCT
ajst-6855	28	36	and	and	CCONJ
ajst-6855	28	37	repetitive	repetitive	ADJ
ajst-6855	28	38	cleaning	cleaning	NOUN
ajst-6855	28	39	.	.	PUNCT
ajst-6855	29	1	to	to	PART
ajst-6855	29	2	enhance	enhance	VERB
ajst-6855	29	3	the	the	DET
ajst-6855	29	4	efficiency	efficiency	NOUN
ajst-6855	29	5	and	and	CCONJ
ajst-6855	29	6	stability	stability	NOUN
ajst-6855	29	7	of	of	ADP
ajst-6855	29	8	the	the	DET
ajst-6855	29	9	silicon	silicon	NOUN
ajst-6855	29	10	carbide	carbide	NOUN
ajst-6855	29	11	cleaning	cleaning	NOUN
ajst-6855	29	12	process	process	NOUN
ajst-6855	29	13	,	,	PUNCT
ajst-6855	29	14	it	it	PRON
ajst-6855	29	15	is	be	AUX
ajst-6855	29	16	particularly	particularly	ADV
ajst-6855	29	17	important	important	ADJ
ajst-6855	29	18	to	to	PART
ajst-6855	29	19	explore	explore	VERB
ajst-6855	29	20	its	its	PRON
ajst-6855	29	21	cleaning	cleaning	NOUN
ajst-6855	29	22	mechanism	mechanism	NOUN
ajst-6855	29	23	.	.	PUNCT
ajst-6855	30	1	this	this	DET
ajst-6855	30	2	paper	paper	NOUN
ajst-6855	30	3	first	first	ADV
ajst-6855	30	4	studied	study	VERB
ajst-6855	30	5	the	the	DET
ajst-6855	30	6	zeta	zeta	NOUN
ajst-6855	30	7	potential	potential	NOUN
ajst-6855	30	8	of	of	ADP
ajst-6855	30	9	the	the	DET
ajst-6855	30	10	commonly	commonly	ADV
ajst-6855	30	11	found	find	VERB
ajst-6855	30	12	contaminants	contaminant	NOUN
ajst-6855	30	13	on	on	ADP
ajst-6855	30	14	the	the	DET
ajst-6855	30	15	surface	surface	NOUN
ajst-6855	30	16	of	of	ADP
ajst-6855	30	17	silicon	silicon	NOUN
ajst-6855	30	18	carbide	carbide	NOUN
ajst-6855	30	19	epitaxial	epitaxial	ADJ
ajst-6855	30	20	wafers	wafer	NOUN
ajst-6855	30	21	under	under	ADP
ajst-6855	30	22	different	different	ADJ
ajst-6855	30	23	ph	ph	ADJ
ajst-6855	30	24	conditions	condition	NOUN
ajst-6855	30	25	.	.	PUNCT
ajst-6855	31	1	this	this	PRON
ajst-6855	31	2	was	be	AUX
ajst-6855	31	3	based	base	VERB
ajst-6855	31	4	on	on	ADP
ajst-6855	31	5	the	the	DET
ajst-6855	31	6	results	result	NOUN
ajst-6855	31	7	of	of	ADP
ajst-6855	31	8	an	an	DET
ajst-6855	31	9	adsorption	adsorption	NOUN
ajst-6855	31	10	experiment	experiment	NOUN
ajst-6855	31	11	of	of	ADP
ajst-6855	31	12	polystyrene	polystyrene	NOUN
ajst-6855	31	13	balls	ball	NOUN
ajst-6855	31	14	on	on	ADP
ajst-6855	31	15	the	the	DET
ajst-6855	31	16	silicon	silicon	NOUN
ajst-6855	31	17	carbide	carbide	NOUN
ajst-6855	31	18	epitaxial	epitaxial	ADJ
ajst-6855	31	19	wafer	wafer	NOUN
ajst-6855	31	20	.	.	PUNCT
ajst-6855	32	1	then	then	ADV
ajst-6855	32	2	,	,	PUNCT
ajst-6855	32	3	a	a	DET
ajst-6855	32	4	cleaning	clean	VERB
ajst-6855	32	5	experiment	experiment	NOUN
ajst-6855	32	6	was	be	AUX
ajst-6855	32	7	designed	design	VERB
ajst-6855	32	8	to	to	PART
ajst-6855	32	9	investigate	investigate	VERB
ajst-6855	32	10	the	the	DET
ajst-6855	32	11	effect	effect	NOUN
ajst-6855	32	12	of	of	ADP
ajst-6855	32	13	zeta	zeta	PROPN
ajst-6855	32	14	potential	potential	NOUN
ajst-6855	32	15	on	on	ADP
ajst-6855	32	16	particles	particle	NOUN
ajst-6855	32	17	in	in	ADP
ajst-6855	32	18	the	the	DET
ajst-6855	32	19	sc1	sc1	NOUN
ajst-6855	32	20	and	and	CCONJ
ajst-6855	32	21	sc2	sc2	NOUN
ajst-6855	32	22	cleaning	clean	VERB
ajst-6855	32	23	solutions	solution	NOUN
ajst-6855	32	24	.	.	PUNCT
ajst-6855	33	1	finally	finally	ADV
ajst-6855	33	2	,	,	PUNCT
ajst-6855	33	3	based	base	VERB
ajst-6855	33	4	on	on	ADP
ajst-6855	33	5	the	the	DET
ajst-6855	33	6	research	research	NOUN
ajst-6855	33	7	results	result	NOUN
ajst-6855	33	8	of	of	ADP
ajst-6855	33	9	zeta	zeta	PROPN
ajst-6855	33	10	potential	potential	NOUN
ajst-6855	33	11	,	,	PUNCT
ajst-6855	33	12	the	the	DET
ajst-6855	33	13	standard	standard	ADJ
ajst-6855	33	14	rca	rca	ADJ
ajst-6855	33	15	cleaning	cleaning	NOUN
ajst-6855	33	16	process	process	NOUN
ajst-6855	33	17	adopted	adopt	VERB
ajst-6855	33	18	by	by	ADP
ajst-6855	33	19	the	the	DET
ajst-6855	33	20	silicon	silicon	NOUN
ajst-6855	33	21	carbide	carbide	NOUN
ajst-6855	33	22	industry	industry	NOUN
ajst-6855	33	23	was	be	AUX
ajst-6855	33	24	optimized	optimize	VERB
ajst-6855	33	25	.	.	PUNCT
ajst-6855	34	1	the	the	DET
ajst-6855	34	2	verification	verification	NOUN
ajst-6855	34	3	experiments	experiment	NOUN
ajst-6855	34	4	show	show	VERB
ajst-6855	34	5	that	that	SCONJ
ajst-6855	34	6	the	the	DET
ajst-6855	34	7	improved	improved	ADJ
ajst-6855	34	8	cleaning	cleaning	NOUN
ajst-6855	34	9	process	process	NOUN
ajst-6855	34	10	significantly	significantly	ADV
ajst-6855	34	11	enhances	enhance	VERB
ajst-6855	34	12	the	the	DET
ajst-6855	34	13	removal	removal	NOUN
ajst-6855	34	14	effect	effect	NOUN
ajst-6855	34	15	of	of	ADP
ajst-6855	34	16	surface	surface	NOUN
ajst-6855	34	17	particles	particle	NOUN
ajst-6855	34	18	and	and	CCONJ
ajst-6855	34	19	reduces	reduce	VERB
ajst-6855	34	20	process	process	NOUN
ajst-6855	34	21	costs	cost	NOUN
ajst-6855	34	22	.	.	PUNCT
ajst-6855	35	1	159	159	NUM
ajst-6855	35	2	2	2	NUM
ajst-6855	35	3	.	.	PUNCT
ajst-6855	35	4	experimental	experimental	ADJ
ajst-6855	35	5	2.1	2.1	NUM
ajst-6855	35	6	.	.	PUNCT
ajst-6855	35	7	materials	material	NOUN
ajst-6855	35	8	the	the	DET
ajst-6855	35	9	sic	sic	ADJ
ajst-6855	35	10	wafer	wafer	NOUN
ajst-6855	35	11	cleaning	cleaning	NOUN
ajst-6855	35	12	process	process	NOUN
ajst-6855	35	13	was	be	AUX
ajst-6855	35	14	validated	validate	VERB
ajst-6855	35	15	using	use	VERB
ajst-6855	35	16	4hsic	4hsic	NUM
ajst-6855	35	17	epitaxial	epitaxial	ADJ
ajst-6855	35	18	wafers	wafer	NOUN
ajst-6855	35	19	.	.	PUNCT
ajst-6855	36	1	the	the	DET
ajst-6855	36	2	wafer	wafer	NOUN
ajst-6855	36	3	size	size	NOUN
ajst-6855	36	4	was	be	AUX
ajst-6855	36	5	4	4	NUM
ajst-6855	36	6	inches	inch	NOUN
ajst-6855	36	7	,	,	PUNCT
ajst-6855	36	8	with	with	ADP
ajst-6855	36	9	an	an	DET
ajst-6855	36	10	epitaxial	epitaxial	ADJ
ajst-6855	36	11	layer	layer	NOUN
ajst-6855	36	12	thickness	thickness	NOUN
ajst-6855	36	13	of	of	ADP
ajst-6855	36	14	12	12	NUM
ajst-6855	36	15	μm	μm	NOUN
ajst-6855	36	16	and	and	CCONJ
ajst-6855	36	17	a	a	DET
ajst-6855	36	18	doping	doping	NOUN
ajst-6855	36	19	concentration	concentration	NOUN
ajst-6855	36	20	of	of	ADP
ajst-6855	36	21	5×1016	5×1016	NUM
ajst-6855	36	22	cm-3	cm-3	NOUN
ajst-6855	36	23	.	.	PUNCT
ajst-6855	37	1	the	the	DET
ajst-6855	37	2	material	material	NOUN
ajst-6855	37	3	used	use	VERB
ajst-6855	37	4	for	for	ADP
ajst-6855	37	5	the	the	DET
ajst-6855	37	6	ps	ps	PROPN
ajst-6855	37	7	sphere	sphere	NOUN
ajst-6855	37	8	adsorption	adsorption	NOUN
ajst-6855	37	9	experiment	experiment	NOUN
ajst-6855	37	10	was	be	AUX
ajst-6855	37	11	a	a	DET
ajst-6855	37	12	surface	surface	NOUN
ajst-6855	37	13	aminated	aminated	ADJ
ajst-6855	37	14	polystyrene	polystyrene	NOUN
ajst-6855	37	15	(	(	PUNCT
ajst-6855	37	16	ps	ps	NOUN
ajst-6855	37	17	)	)	PUNCT
ajst-6855	37	18	microsphere	microsphere	NOUN
ajst-6855	37	19	solution	solution	NOUN
ajst-6855	37	20	with	with	ADP
ajst-6855	37	21	a	a	DET
ajst-6855	37	22	particle	particle	NOUN
ajst-6855	37	23	size	size	NOUN
ajst-6855	37	24	of	of	ADP
ajst-6855	37	25	1	1	NUM
ajst-6855	37	26	μm	μm	NUM
ajst-6855	37	27	and	and	CCONJ
ajst-6855	37	28	solid	solid	ADJ
ajst-6855	37	29	content	content	NOUN
ajst-6855	37	30	of	of	ADP
ajst-6855	37	31	2.5	2.5	NUM
ajst-6855	37	32	%	%	NOUN
ajst-6855	37	33	.	.	PUNCT
ajst-6855	38	1	the	the	DET
ajst-6855	38	2	test	test	NOUN
ajst-6855	38	3	samples	sample	NOUN
ajst-6855	38	4	for	for	ADP
ajst-6855	38	5	the	the	DET
ajst-6855	38	6	ps	ps	PROPN
ajst-6855	38	7	sphere	sphere	NOUN
ajst-6855	38	8	adsorption	adsorption	NOUN
ajst-6855	38	9	experiment	experiment	NOUN
ajst-6855	38	10	were	be	AUX
ajst-6855	38	11	10×10	10×10	NUM
ajst-6855	38	12	mm2	mm2	NOUN
ajst-6855	38	13	slices	slice	NOUN
ajst-6855	38	14	of	of	ADP
ajst-6855	38	15	the	the	DET
ajst-6855	38	16	aforementioned	aforementioned	ADJ
ajst-6855	38	17	epitaxial	epitaxial	ADJ
ajst-6855	38	18	wafers	wafer	NOUN
ajst-6855	38	19	.	.	PUNCT
ajst-6855	39	1	in	in	ADP
ajst-6855	39	2	accordance	accordance	NOUN
ajst-6855	39	3	with	with	ADP
ajst-6855	39	4	the	the	DET
ajst-6855	39	5	requirements	requirement	NOUN
ajst-6855	39	6	of	of	ADP
ajst-6855	39	7	the	the	DET
ajst-6855	39	8	zeta	zeta	PROPN
ajst-6855	39	9	potential	potential	ADJ
ajst-6855	39	10	tester	tester	NOUN
ajst-6855	39	11	,	,	PUNCT
ajst-6855	39	12	36×15	36×15	NUM
ajst-6855	39	13	mm2	mm2	NOUN
ajst-6855	39	14	epitaxial	epitaxial	ADJ
ajst-6855	39	15	wafer	wafer	NOUN
ajst-6855	39	16	slices	slice	NOUN
ajst-6855	39	17	were	be	AUX
ajst-6855	39	18	used	use	VERB
ajst-6855	39	19	to	to	PART
ajst-6855	39	20	measure	measure	VERB
ajst-6855	39	21	the	the	DET
ajst-6855	39	22	zeta	zeta	NOUN
ajst-6855	39	23	potential	potential	NOUN
ajst-6855	39	24	.	.	PUNCT
ajst-6855	40	1	2.2	2.2	NUM
ajst-6855	40	2	.	.	PUNCT
ajst-6855	40	3	methods	method	NOUN
ajst-6855	40	4	sun	sun	PROPN
ajst-6855	40	5	,	,	PUNCT
ajst-6855	40	6	tao	tao	PROPN
ajst-6855	40	7	et	et	PROPN
ajst-6855	40	8	al[11	al[11	PROPN
ajst-6855	40	9	]	]	PUNCT
ajst-6855	40	10	.	.	PUNCT
ajst-6855	40	11	proposed	propose	VERB
ajst-6855	40	12	that	that	SCONJ
ajst-6855	40	13	the	the	DET
ajst-6855	40	14	zeta	zeta	PROPN
ajst-6855	40	15	potential	potential	NOUN
ajst-6855	40	16	directly	directly	ADV
ajst-6855	40	17	affects	affect	VERB
ajst-6855	40	18	the	the	DET
ajst-6855	40	19	surface	surface	NOUN
ajst-6855	40	20	charge	charge	NOUN
ajst-6855	40	21	of	of	ADP
ajst-6855	40	22	polystyrene	polystyrene	NOUN
ajst-6855	40	23	microspheres	microsphere	NOUN
ajst-6855	40	24	and	and	CCONJ
ajst-6855	40	25	measured	measure	VERB
ajst-6855	40	26	the	the	DET
ajst-6855	40	27	zeta	zeta	NOUN
ajst-6855	40	28	potential	potential	NOUN
ajst-6855	40	29	of	of	ADP
ajst-6855	40	30	surface	surface	NOUN
ajst-6855	40	31	-	-	PUNCT
ajst-6855	40	32	aminated	aminate	VERB
ajst-6855	40	33	polystyrene	polystyrene	NOUN
ajst-6855	40	34	microspheres	microsphere	NOUN
ajst-6855	40	35	as	as	ADP
ajst-6855	40	36	a	a	DET
ajst-6855	40	37	function	function	NOUN
ajst-6855	40	38	of	of	ADP
ajst-6855	40	39	ph	ph	PROPN
ajst-6855	40	40	.	.	PUNCT
ajst-6855	41	1	they	they	PRON
ajst-6855	41	2	found	find	VERB
ajst-6855	41	3	that	that	SCONJ
ajst-6855	41	4	the	the	DET
ajst-6855	41	5	zeta	zeta	NOUN
ajst-6855	41	6	potential	potential	NOUN
ajst-6855	41	7	of	of	ADP
ajst-6855	41	8	polystyrene	polystyrene	NOUN
ajst-6855	41	9	microspheres	microsphere	NOUN
ajst-6855	41	10	is	be	AUX
ajst-6855	41	11	positive	positive	ADJ
ajst-6855	41	12	in	in	ADP
ajst-6855	41	13	acidic	acidic	ADJ
ajst-6855	41	14	solutions	solution	NOUN
ajst-6855	41	15	,	,	PUNCT
ajst-6855	41	16	while	while	SCONJ
ajst-6855	41	17	it	it	PRON
ajst-6855	41	18	is	be	AUX
ajst-6855	41	19	negative	negative	ADJ
ajst-6855	41	20	in	in	ADP
ajst-6855	41	21	alkaline	alkaline	NOUN
ajst-6855	41	22	solutions	solution	NOUN
ajst-6855	41	23	.	.	PUNCT
ajst-6855	42	1	two	two	NUM
ajst-6855	42	2	solutions	solution	NOUN
ajst-6855	42	3	were	be	AUX
ajst-6855	42	4	prepared	prepare	VERB
ajst-6855	42	5	using	use	VERB
ajst-6855	42	6	dilute	dilute	VERB
ajst-6855	42	7	hydrochloric	hydrochloric	ADJ
ajst-6855	42	8	acid	acid	NOUN
ajst-6855	42	9	and	and	CCONJ
ajst-6855	42	10	koh	koh	PROPN
ajst-6855	42	11	solid	solid	ADJ
ajst-6855	42	12	to	to	PART
ajst-6855	42	13	obtain	obtain	VERB
ajst-6855	42	14	ph	ph	ADJ
ajst-6855	42	15	values	value	NOUN
ajst-6855	42	16	of	of	ADP
ajst-6855	42	17	2	2	NUM
ajst-6855	42	18	and	and	CCONJ
ajst-6855	42	19	12	12	NUM
ajst-6855	42	20	,	,	PUNCT
ajst-6855	42	21	respectively	respectively	ADV
ajst-6855	42	22	.	.	PUNCT
ajst-6855	43	1	a	a	DET
ajst-6855	43	2	0.1	0.1	NUM
ajst-6855	43	3	ml	ml	NOUN
ajst-6855	43	4	ps	ps	NOUN
ajst-6855	43	5	sphere	sphere	NOUN
ajst-6855	43	6	solution	solution	NOUN
ajst-6855	43	7	was	be	AUX
ajst-6855	43	8	mixed	mix	VERB
ajst-6855	43	9	with	with	ADP
ajst-6855	43	10	the	the	DET
ajst-6855	43	11	water	water	NOUN
ajst-6855	43	12	solutions	solution	NOUN
ajst-6855	43	13	of	of	ADP
ajst-6855	43	14	varying	vary	VERB
ajst-6855	43	15	ph	ph	PROPN
ajst-6855	43	16	.	.	PROPN
ajst-6855	43	17	10×10mm2	10×10mm2	NUM
ajst-6855	43	18	epitaxial	epitaxial	ADJ
ajst-6855	43	19	wafers	wafer	NOUN
ajst-6855	43	20	were	be	AUX
ajst-6855	43	21	then	then	ADV
ajst-6855	43	22	immersed	immerse	VERB
ajst-6855	43	23	in	in	ADP
ajst-6855	43	24	the	the	DET
ajst-6855	43	25	solutions	solution	NOUN
ajst-6855	43	26	for	for	ADP
ajst-6855	43	27	30	30	NUM
ajst-6855	43	28	seconds	second	NOUN
ajst-6855	43	29	,	,	PUNCT
ajst-6855	43	30	removed	remove	VERB
ajst-6855	43	31	,	,	PUNCT
ajst-6855	43	32	and	and	CCONJ
ajst-6855	43	33	allowed	allow	VERB
ajst-6855	43	34	to	to	PART
ajst-6855	43	35	dry	dry	VERB
ajst-6855	43	36	naturally	naturally	ADV
ajst-6855	43	37	.	.	PUNCT
ajst-6855	44	1	an	an	DET
ajst-6855	44	2	optical	optical	ADJ
ajst-6855	44	3	microscope	microscope	NOUN
ajst-6855	44	4	was	be	AUX
ajst-6855	44	5	used	use	VERB
ajst-6855	44	6	to	to	PART
ajst-6855	44	7	observe	observe	VERB
ajst-6855	44	8	the	the	DET
ajst-6855	44	9	distribution	distribution	NOUN
ajst-6855	44	10	of	of	ADP
ajst-6855	44	11	ps	ps	PROPN
ajst-6855	44	12	spheres	sphere	NOUN
ajst-6855	44	13	on	on	ADP
ajst-6855	44	14	the	the	DET
ajst-6855	44	15	sic	sic	ADJ
ajst-6855	44	16	sample	sample	NOUN
ajst-6855	44	17	surface	surface	NOUN
ajst-6855	44	18	.	.	PUNCT
ajst-6855	45	1	the	the	DET
ajst-6855	45	2	4	4	NUM
ajst-6855	45	3	-	-	PUNCT
ajst-6855	45	4	inch	inch	NOUN
ajst-6855	45	5	epitaxial	epitaxial	ADJ
ajst-6855	45	6	wafer	wafer	NOUN
ajst-6855	45	7	was	be	AUX
ajst-6855	45	8	placed	place	VERB
ajst-6855	45	9	in	in	ADP
ajst-6855	45	10	a	a	DET
ajst-6855	45	11	single	single	ADJ
ajst-6855	45	12	wafer	wafer	NOUN
ajst-6855	45	13	carrier	carrier	NOUN
ajst-6855	45	14	with	with	ADP
ajst-6855	45	15	an	an	DET
ajst-6855	45	16	open	open	ADJ
ajst-6855	45	17	box	box	NOUN
ajst-6855	45	18	lid	lid	NOUN
ajst-6855	45	19	and	and	CCONJ
ajst-6855	45	20	left	leave	VERB
ajst-6855	45	21	in	in	ADP
ajst-6855	45	22	a	a	DET
ajst-6855	45	23	class	class	NOUN
ajst-6855	45	24	1000	1000	NUM
ajst-6855	45	25	cleanroom	cleanroom	NOUN
ajst-6855	45	26	for	for	ADP
ajst-6855	45	27	more	more	ADJ
ajst-6855	45	28	than	than	ADP
ajst-6855	45	29	three	three	NUM
ajst-6855	45	30	days	day	NOUN
ajst-6855	45	31	,	,	PUNCT
ajst-6855	45	32	during	during	ADP
ajst-6855	45	33	which	which	PRON
ajst-6855	45	34	a	a	DET
ajst-6855	45	35	considerable	considerable	ADJ
ajst-6855	45	36	amount	amount	NOUN
ajst-6855	45	37	of	of	ADP
ajst-6855	45	38	particles	particle	NOUN
ajst-6855	45	39	contaminated	contaminate	VERB
ajst-6855	45	40	its	its	PRON
ajst-6855	45	41	surface	surface	NOUN
ajst-6855	45	42	.	.	PUNCT
ajst-6855	46	1	subsequently	subsequently	ADV
ajst-6855	46	2	,	,	PUNCT
ajst-6855	46	3	the	the	DET
ajst-6855	46	4	wafer	wafer	NOUN
ajst-6855	46	5	was	be	AUX
ajst-6855	46	6	subjected	subject	VERB
ajst-6855	46	7	to	to	ADP
ajst-6855	46	8	group	group	NOUN
ajst-6855	46	9	cleaning	cleaning	NOUN
ajst-6855	46	10	using	use	VERB
ajst-6855	46	11	a	a	DET
ajst-6855	46	12	chemical	chemical	ADJ
ajst-6855	46	13	cleaning	cleaning	NOUN
ajst-6855	46	14	tank	tank	NOUN
ajst-6855	46	15	,	,	PUNCT
ajst-6855	46	16	according	accord	VERB
ajst-6855	46	17	to	to	ADP
ajst-6855	46	18	the	the	DET
ajst-6855	46	19	conditions	condition	NOUN
ajst-6855	46	20	listed	list	VERB
ajst-6855	46	21	in	in	ADP
ajst-6855	46	22	table	table	NOUN
ajst-6855	46	23	1	1	NUM
ajst-6855	46	24	,	,	PUNCT
ajst-6855	46	25	in	in	ADP
ajst-6855	46	26	a	a	DET
ajst-6855	46	27	class	class	NOUN
ajst-6855	46	28	10	10	NUM
ajst-6855	46	29	cleanroom	cleanroom	NOUN
ajst-6855	46	30	.	.	PUNCT
ajst-6855	47	1	table	table	NOUN
ajst-6855	47	2	1	1	NUM
ajst-6855	47	3	.	.	PUNCT
ajst-6855	48	1	experimental	experimental	ADJ
ajst-6855	48	2	wafers	wafer	NOUN
ajst-6855	48	3	and	and	CCONJ
ajst-6855	48	4	corresponding	correspond	VERB
ajst-6855	48	5	cleaning	cleaning	NOUN
ajst-6855	48	6	processes	process	NOUN
ajst-6855	48	7	sample	sample	NOUN
ajst-6855	48	8	no	no	INTJ
ajst-6855	48	9	.	.	PUNCT
ajst-6855	48	10	cleaning	cleaning	NOUN
ajst-6855	48	11	process	process	NOUN
ajst-6855	48	12	a	a	DET
ajst-6855	48	13	spm→sc1→sc2	spm→sc1→sc2	PROPN
ajst-6855	49	1	b	b	X
ajst-6855	49	2	spm→sc1	spm→sc1	PROPN
ajst-6855	50	1	c	c	X
ajst-6855	50	2	spm→sc2	spm→sc2	PROPN
ajst-6855	51	1	d	d	X
ajst-6855	51	2	spm→sc2→sc1	spm→sc2→sc1	PROPN
ajst-6855	51	3	sample	sample	NOUN
ajst-6855	51	4	a	a	DET
ajst-6855	51	5	served	serve	VERB
ajst-6855	51	6	as	as	ADP
ajst-6855	51	7	the	the	DET
ajst-6855	51	8	control	control	NOUN
ajst-6855	51	9	experiment	experiment	NOUN
ajst-6855	51	10	and	and	CCONJ
ajst-6855	51	11	was	be	AUX
ajst-6855	51	12	cleaned	clean	VERB
ajst-6855	51	13	only	only	ADV
ajst-6855	51	14	using	use	VERB
ajst-6855	51	15	conventional	conventional	ADJ
ajst-6855	51	16	rca	rca	NOUN
ajst-6855	51	17	technology	technology	NOUN
ajst-6855	51	18	.	.	PUNCT
ajst-6855	52	1	sample	sample	PROPN
ajst-6855	52	2	b	b	PROPN
ajst-6855	52	3	was	be	AUX
ajst-6855	52	4	cleaned	clean	VERB
ajst-6855	52	5	using	use	VERB
ajst-6855	52	6	spm	spm	PROPN
ajst-6855	52	7	and	and	CCONJ
ajst-6855	52	8	sc1	sc1	PROPN
ajst-6855	52	9	processes	process	NOUN
ajst-6855	52	10	to	to	PART
ajst-6855	52	11	investigate	investigate	VERB
ajst-6855	52	12	the	the	DET
ajst-6855	52	13	particle	particle	NOUN
ajst-6855	52	14	removal	removal	NOUN
ajst-6855	52	15	effect	effect	NOUN
ajst-6855	52	16	of	of	ADP
ajst-6855	52	17	the	the	DET
ajst-6855	52	18	sc1	sc1	NOUN
ajst-6855	52	19	process	process	NOUN
ajst-6855	52	20	.	.	PUNCT
ajst-6855	53	1	sample	sample	NOUN
ajst-6855	53	2	c	c	PROPN
ajst-6855	53	3	was	be	AUX
ajst-6855	53	4	cleaned	clean	VERB
ajst-6855	53	5	using	use	VERB
ajst-6855	53	6	spm	spm	PROPN
ajst-6855	53	7	and	and	CCONJ
ajst-6855	53	8	sc2	sc2	NOUN
ajst-6855	53	9	processes	process	NOUN
ajst-6855	53	10	to	to	PART
ajst-6855	53	11	investigate	investigate	VERB
ajst-6855	53	12	the	the	DET
ajst-6855	53	13	particle	particle	NOUN
ajst-6855	53	14	removal	removal	NOUN
ajst-6855	53	15	effect	effect	NOUN
ajst-6855	53	16	of	of	ADP
ajst-6855	53	17	the	the	DET
ajst-6855	53	18	sc2	sc2	NOUN
ajst-6855	53	19	process	process	NOUN
ajst-6855	53	20	.	.	PUNCT
ajst-6855	54	1	sample	sample	NOUN
ajst-6855	54	2	d	d	PROPN
ajst-6855	54	3	had	have	VERB
ajst-6855	54	4	its	its	PRON
ajst-6855	54	5	cleaning	clean	VERB
ajst-6855	54	6	process	process	NOUN
ajst-6855	54	7	order	order	NOUN
ajst-6855	54	8	adjusted	adjust	VERB
ajst-6855	54	9	,	,	PUNCT
ajst-6855	54	10	with	with	ADP
ajst-6855	54	11	sc2	sc2	NOUN
ajst-6855	54	12	being	be	AUX
ajst-6855	54	13	completed	complete	VERB
ajst-6855	54	14	before	before	ADP
ajst-6855	54	15	sc1	sc1	PROPN
ajst-6855	54	16	,	,	PUNCT
ajst-6855	54	17	to	to	PART
ajst-6855	54	18	investigate	investigate	VERB
ajst-6855	54	19	the	the	DET
ajst-6855	54	20	effect	effect	NOUN
ajst-6855	54	21	of	of	ADP
ajst-6855	54	22	the	the	DET
ajst-6855	54	23	order	order	NOUN
ajst-6855	54	24	of	of	ADP
ajst-6855	54	25	sc1	sc1	NOUN
ajst-6855	54	26	and	and	CCONJ
ajst-6855	54	27	sc2	sc2	NOUN
ajst-6855	54	28	processes	process	NOUN
ajst-6855	54	29	on	on	ADP
ajst-6855	54	30	particle	particle	NOUN
ajst-6855	54	31	removal	removal	NOUN
ajst-6855	54	32	efficiency	efficiency	NOUN
ajst-6855	54	33	.	.	PUNCT
ajst-6855	55	1	following	follow	VERB
ajst-6855	55	2	each	each	DET
ajst-6855	55	3	step	step	NOUN
ajst-6855	55	4	in	in	ADP
ajst-6855	55	5	the	the	DET
ajst-6855	55	6	cleaning	cleaning	NOUN
ajst-6855	55	7	process	process	NOUN
ajst-6855	55	8	,	,	PUNCT
ajst-6855	55	9	the	the	DET
ajst-6855	55	10	samples	sample	NOUN
ajst-6855	55	11	were	be	AUX
ajst-6855	55	12	rinsed	rinse	VERB
ajst-6855	55	13	with	with	ADP
ajst-6855	55	14	ultrapure	ultrapure	NOUN
ajst-6855	55	15	water	water	NOUN
ajst-6855	55	16	and	and	CCONJ
ajst-6855	55	17	subjected	subject	VERB
ajst-6855	55	18	to	to	ADP
ajst-6855	55	19	ultrasonic	ultrasonic	ADJ
ajst-6855	55	20	cleaning	cleaning	NOUN
ajst-6855	55	21	.	.	PUNCT
ajst-6855	56	1	after	after	SCONJ
ajst-6855	56	2	the	the	DET
ajst-6855	56	3	cleaning	cleaning	NOUN
ajst-6855	56	4	process	process	NOUN
ajst-6855	56	5	was	be	AUX
ajst-6855	56	6	complete	complete	ADJ
ajst-6855	56	7	,	,	PUNCT
ajst-6855	56	8	nitrogen	nitrogen	NOUN
ajst-6855	56	9	gas	gas	NOUN
ajst-6855	56	10	was	be	AUX
ajst-6855	56	11	used	use	VERB
ajst-6855	56	12	to	to	PART
ajst-6855	56	13	dry	dry	VERB
ajst-6855	56	14	the	the	DET
ajst-6855	56	15	samples	sample	NOUN
ajst-6855	56	16	,	,	PUNCT
ajst-6855	56	17	which	which	PRON
ajst-6855	56	18	were	be	AUX
ajst-6855	56	19	then	then	ADV
ajst-6855	56	20	placed	place	VERB
ajst-6855	56	21	in	in	ADP
ajst-6855	56	22	clean	clean	ADJ
ajst-6855	56	23	wafer	wafer	NOUN
ajst-6855	56	24	carriers	carrier	NOUN
ajst-6855	56	25	for	for	ADP
ajst-6855	56	26	further	further	ADJ
ajst-6855	56	27	testing	testing	NOUN
ajst-6855	56	28	.	.	PUNCT
ajst-6855	57	1	2.3	2.3	NUM
ajst-6855	57	2	.	.	PUNCT
ajst-6855	58	1	techniques	technique	NOUN
ajst-6855	58	2	of	of	ADP
ajst-6855	58	3	analysis	analysis	NOUN
ajst-6855	58	4	in	in	ADP
ajst-6855	58	5	this	this	DET
ajst-6855	58	6	study	study	NOUN
ajst-6855	58	7	,	,	PUNCT
ajst-6855	58	8	the	the	DET
ajst-6855	58	9	leica	leica	PROPN
ajst-6855	58	10	dm8000	dm8000	PROPN
ajst-6855	58	11	m	m	PROPN
ajst-6855	58	12	semiconductor	semiconductor	NOUN
ajst-6855	58	13	polarizing	polarizing	NOUN
ajst-6855	58	14	microscope	microscope	NOUN
ajst-6855	58	15	was	be	AUX
ajst-6855	58	16	used	use	VERB
ajst-6855	58	17	to	to	PART
ajst-6855	58	18	detect	detect	VERB
ajst-6855	58	19	the	the	DET
ajst-6855	58	20	adsorption	adsorption	NOUN
ajst-6855	58	21	of	of	ADP
ajst-6855	58	22	ps	ps	PROPN
ajst-6855	58	23	spheres	sphere	NOUN
ajst-6855	58	24	on	on	ADP
ajst-6855	58	25	the	the	DET
ajst-6855	58	26	10×10mm2	10×10mm2	NUM
ajst-6855	58	27	epitaxial	epitaxial	ADJ
ajst-6855	58	28	wafer	wafer	NOUN
ajst-6855	58	29	.	.	PUNCT
ajst-6855	59	1	the	the	DET
ajst-6855	59	2	otsuka	otsuka	PROPN
ajst-6855	59	3	electronics	electronics	PROPN
ajst-6855	59	4	elsz-2000zs	elsz-2000zs	NOUN
ajst-6855	59	5	potential	potential	ADJ
ajst-6855	59	6	analyzer	analyzer	NOUN
ajst-6855	59	7	was	be	AUX
ajst-6855	59	8	used	use	VERB
ajst-6855	59	9	to	to	PART
ajst-6855	59	10	measure	measure	VERB
ajst-6855	59	11	the	the	DET
ajst-6855	59	12	zeta	zeta	NOUN
ajst-6855	59	13	potential	potential	NOUN
ajst-6855	59	14	of	of	ADP
ajst-6855	59	15	the	the	DET
ajst-6855	59	16	si	si	PROPN
ajst-6855	59	17	surface	surface	NOUN
ajst-6855	59	18	of	of	ADP
ajst-6855	59	19	the	the	DET
ajst-6855	59	20	epitaxial	epitaxial	ADJ
ajst-6855	59	21	wafer	wafer	NOUN
ajst-6855	59	22	.	.	PUNCT
ajst-6855	60	1	the	the	DET
ajst-6855	60	2	surface	surface	NOUN
ajst-6855	60	3	defect	defect	NOUN
ajst-6855	60	4	detection	detection	NOUN
ajst-6855	60	5	equipment	equipment	NOUN
ajst-6855	60	6	(	(	PUNCT
ajst-6855	60	7	lasertech	lasertech	PROPN
ajst-6855	60	8	company	company	NOUN
ajst-6855	60	9	sica	sica	PROPN
ajst-6855	60	10	)	)	PUNCT
ajst-6855	60	11	was	be	AUX
ajst-6855	60	12	used	use	VERB
ajst-6855	60	13	to	to	PART
ajst-6855	60	14	detect	detect	VERB
ajst-6855	60	15	the	the	DET
ajst-6855	60	16	number	number	NOUN
ajst-6855	60	17	of	of	ADP
ajst-6855	60	18	residual	residual	ADJ
ajst-6855	60	19	contaminating	contaminating	NOUN
ajst-6855	60	20	particles	particle	NOUN
ajst-6855	60	21	on	on	ADP
ajst-6855	60	22	the	the	DET
ajst-6855	60	23	si	si	PROPN
ajst-6855	60	24	surface	surface	NOUN
ajst-6855	60	25	of	of	ADP
ajst-6855	60	26	the	the	DET
ajst-6855	60	27	epitaxial	epitaxial	ADJ
ajst-6855	60	28	wafer	wafer	NOUN
ajst-6855	60	29	(	(	PUNCT
ajst-6855	60	30	labeled	label	VERB
ajst-6855	60	31	as	as	ADP
ajst-6855	60	32	a	a	DET
ajst-6855	60	33	-	-	PUNCT
ajst-6855	60	34	d	d	NOUN
ajst-6855	60	35	)	)	PUNCT
ajst-6855	60	36	.	.	PUNCT
ajst-6855	61	1	3	3	X
ajst-6855	61	2	.	.	NOUN
ajst-6855	61	3	results	result	NOUN
ajst-6855	61	4	and	and	CCONJ
ajst-6855	61	5	discussion	discussion	NOUN
ajst-6855	61	6	sic	sic	NOUN
ajst-6855	61	7	is	be	AUX
ajst-6855	61	8	a	a	DET
ajst-6855	61	9	polar	polar	ADJ
ajst-6855	61	10	semiconductor	semiconductor	NOUN
ajst-6855	61	11	that	that	PRON
ajst-6855	61	12	is	be	AUX
ajst-6855	61	13	primarily	primarily	ADV
ajst-6855	61	14	used	use	VERB
ajst-6855	61	15	in	in	ADP
ajst-6855	61	16	the	the	DET
ajst-6855	61	17	industry	industry	NOUN
ajst-6855	61	18	for	for	ADP
ajst-6855	61	19	epitaxial	epitaxial	ADJ
ajst-6855	61	20	growth	growth	NOUN
ajst-6855	61	21	and	and	CCONJ
ajst-6855	61	22	device	device	NOUN
ajst-6855	61	23	manufacturing	manufacturing	NOUN
ajst-6855	61	24	on	on	ADP
ajst-6855	61	25	si	si	PROPN
ajst-6855	61	26	surfaces[12	surfaces[12	PROPN
ajst-6855	61	27	]	]	PUNCT
ajst-6855	61	28	.	.	PUNCT
ajst-6855	62	1	as	as	ADP
ajst-6855	62	2	a	a	DET
ajst-6855	62	3	result	result	NOUN
ajst-6855	62	4	,	,	PUNCT
ajst-6855	62	5	this	this	DET
ajst-6855	62	6	paper	paper	NOUN
ajst-6855	62	7	focuses	focus	VERB
ajst-6855	62	8	on	on	ADP
ajst-6855	62	9	the	the	DET
ajst-6855	62	10	charge	charge	NOUN
ajst-6855	62	11	state	state	NOUN
ajst-6855	62	12	of	of	ADP
ajst-6855	62	13	the	the	DET
ajst-6855	62	14	si	si	PROPN
ajst-6855	62	15	surface	surface	NOUN
ajst-6855	62	16	of	of	ADP
ajst-6855	62	17	sic	sic	ADJ
ajst-6855	62	18	wafers	wafer	NOUN
ajst-6855	62	19	.	.	PUNCT
ajst-6855	63	1	figure	figure	NOUN
ajst-6855	63	2	1	1	NUM
ajst-6855	63	3	illustrates	illustrate	VERB
ajst-6855	63	4	the	the	DET
ajst-6855	63	5	adsorption	adsorption	NOUN
ajst-6855	63	6	of	of	ADP
ajst-6855	63	7	ps	ps	PROPN
ajst-6855	63	8	spheres	sphere	NOUN
ajst-6855	63	9	on	on	ADP
ajst-6855	63	10	the	the	DET
ajst-6855	63	11	si	si	PROPN
ajst-6855	63	12	surface	surface	NOUN
ajst-6855	63	13	of	of	ADP
ajst-6855	63	14	sic	sic	ADJ
ajst-6855	63	15	epitaxial	epitaxial	ADJ
ajst-6855	63	16	wafers	wafer	NOUN
ajst-6855	63	17	in	in	ADP
ajst-6855	63	18	solutions	solution	NOUN
ajst-6855	63	19	with	with	ADP
ajst-6855	63	20	ph	ph	ADJ
ajst-6855	63	21	values	value	NOUN
ajst-6855	63	22	of	of	ADP
ajst-6855	63	23	2	2	NUM
ajst-6855	63	24	and	and	CCONJ
ajst-6855	63	25	12	12	NUM
ajst-6855	63	26	,	,	PUNCT
ajst-6855	63	27	respectively	respectively	ADV
ajst-6855	63	28	.	.	PUNCT
ajst-6855	64	1	in	in	ADP
ajst-6855	64	2	figure	figure	NOUN
ajst-6855	64	3	1(a	1(a	NUM
ajst-6855	64	4	)	)	PUNCT
ajst-6855	64	5	,	,	PUNCT
ajst-6855	64	6	where	where	SCONJ
ajst-6855	64	7	the	the	DET
ajst-6855	64	8	solution	solution	NOUN
ajst-6855	64	9	ph	ph	NOUN
ajst-6855	64	10	is	be	AUX
ajst-6855	64	11	2	2	NUM
ajst-6855	64	12	,	,	PUNCT
ajst-6855	64	13	the	the	DET
ajst-6855	64	14	si	si	PROPN
ajst-6855	64	15	surface	surface	NOUN
ajst-6855	64	16	of	of	ADP
ajst-6855	64	17	the	the	DET
ajst-6855	64	18	epitaxial	epitaxial	ADJ
ajst-6855	64	19	wafer	wafer	NOUN
ajst-6855	64	20	adsorbs	adsorb	VERB
ajst-6855	64	21	a	a	DET
ajst-6855	64	22	large	large	ADJ
ajst-6855	64	23	number	number	NOUN
ajst-6855	64	24	of	of	ADP
ajst-6855	64	25	ps	ps	PROPN
ajst-6855	64	26	spheres	sphere	NOUN
ajst-6855	64	27	,	,	PUNCT
ajst-6855	64	28	with	with	ADP
ajst-6855	64	29	a	a	DET
ajst-6855	64	30	statistically	statistically	ADV
ajst-6855	64	31	calculated	calculate	VERB
ajst-6855	64	32	surface	surface	NOUN
ajst-6855	64	33	adsorption	adsorption	NOUN
ajst-6855	64	34	density	density	NOUN
ajst-6855	64	35	of	of	ADP
ajst-6855	64	36	5152	5152	NUM
ajst-6855	64	37	spheres	sphere	NOUN
ajst-6855	64	38	/	/	SYM
ajst-6855	64	39	mm2	mm2	NOUN
ajst-6855	64	40	.	.	PUNCT
ajst-6855	65	1	however	however	ADV
ajst-6855	65	2	,	,	PUNCT
ajst-6855	65	3	in	in	ADP
ajst-6855	65	4	figure	figure	NOUN
ajst-6855	65	5	1(b	1(b	NUM
ajst-6855	65	6	)	)	PUNCT
ajst-6855	65	7	,	,	PUNCT
ajst-6855	65	8	where	where	SCONJ
ajst-6855	65	9	the	the	DET
ajst-6855	65	10	solution	solution	NOUN
ajst-6855	65	11	ph	ph	NOUN
ajst-6855	65	12	is	be	AUX
ajst-6855	65	13	12	12	NUM
ajst-6855	65	14	,	,	PUNCT
ajst-6855	65	15	the	the	DET
ajst-6855	65	16	si	si	PROPN
ajst-6855	65	17	surface	surface	NOUN
ajst-6855	65	18	only	only	ADV
ajst-6855	65	19	adsorbs	adsorb	VERB
ajst-6855	65	20	a	a	DET
ajst-6855	65	21	small	small	ADJ
ajst-6855	65	22	amount	amount	NOUN
ajst-6855	65	23	of	of	ADP
ajst-6855	65	24	ps	ps	PROPN
ajst-6855	65	25	spheres	sphere	NOUN
ajst-6855	65	26	,	,	PUNCT
ajst-6855	65	27	with	with	ADP
ajst-6855	65	28	a	a	DET
ajst-6855	65	29	statistically	statistically	ADV
ajst-6855	65	30	calculated	calculate	VERB
ajst-6855	65	31	surface	surface	NOUN
ajst-6855	65	32	adsorption	adsorption	NOUN
ajst-6855	65	33	density	density	NOUN
ajst-6855	65	34	of	of	ADP
ajst-6855	65	35	only	only	ADV
ajst-6855	65	36	303	303	NUM
ajst-6855	65	37	spheres	sphere	NOUN
ajst-6855	65	38	/	/	SYM
ajst-6855	65	39	mm2	mm2	NOUN
ajst-6855	65	40	.	.	PUNCT
ajst-6855	66	1	the	the	DET
ajst-6855	66	2	significant	significant	ADJ
ajst-6855	66	3	difference	difference	NOUN
ajst-6855	66	4	in	in	ADP
ajst-6855	66	5	the	the	DET
ajst-6855	66	6	ps	ps	PROPN
ajst-6855	66	7	sphere	sphere	NOUN
ajst-6855	66	8	adsorption	adsorption	NOUN
ajst-6855	66	9	density	density	NOUN
ajst-6855	66	10	on	on	ADP
ajst-6855	66	11	the	the	DET
ajst-6855	66	12	sic	sic	ADJ
ajst-6855	66	13	surface	surface	NOUN
ajst-6855	66	14	in	in	ADP
ajst-6855	66	15	figure	figure	NOUN
ajst-6855	66	16	1	1	NUM
ajst-6855	66	17	demonstrates	demonstrate	VERB
ajst-6855	66	18	that	that	SCONJ
ajst-6855	66	19	the	the	DET
ajst-6855	66	20	solution	solution	NOUN
ajst-6855	66	21	ph	ph	NOUN
ajst-6855	66	22	value	value	NOUN
ajst-6855	66	23	is	be	AUX
ajst-6855	66	24	the	the	DET
ajst-6855	66	25	determining	determine	VERB
ajst-6855	66	26	factor	factor	NOUN
ajst-6855	66	27	that	that	PRON
ajst-6855	66	28	affects	affect	VERB
ajst-6855	66	29	the	the	DET
ajst-6855	66	30	amount	amount	NOUN
ajst-6855	66	31	of	of	ADP
ajst-6855	66	32	ps	ps	PROPN
ajst-6855	66	33	sphere	sphere	NOUN
ajst-6855	66	34	adsorption	adsorption	NOUN
ajst-6855	66	35	.	.	PUNCT
ajst-6855	67	1	(	(	PUNCT
ajst-6855	67	2	a	a	X
ajst-6855	67	3	)	)	PUNCT
ajst-6855	67	4	(	(	PUNCT
ajst-6855	67	5	b	b	X
ajst-6855	67	6	)	)	PUNCT
ajst-6855	67	7	figure	figure	NOUN
ajst-6855	67	8	1	1	NUM
ajst-6855	67	9	.	.	PUNCT
ajst-6855	68	1	the	the	DET
ajst-6855	68	2	adhesion	adhesion	NOUN
ajst-6855	68	3	density	density	NOUN
ajst-6855	68	4	of	of	ADP
ajst-6855	68	5	ps	ps	PROPN
ajst-6855	68	6	spheres	sphere	NOUN
ajst-6855	68	7	at	at	ADP
ajst-6855	68	8	ph	ph	PROPN
ajst-6855	68	9	2	2	NUM
ajst-6855	68	10	(	(	PUNCT
ajst-6855	68	11	a	a	NOUN
ajst-6855	68	12	)	)	PUNCT
ajst-6855	68	13	and	and	CCONJ
ajst-6855	68	14	ph	ph	NOUN
ajst-6855	68	15	12	12	NUM
ajst-6855	68	16	(	(	PUNCT
ajst-6855	68	17	b	b	NOUN
ajst-6855	68	18	)	)	PUNCT
ajst-6855	68	19	160	160	NUM
ajst-6855	68	20	we	we	PRON
ajst-6855	68	21	hypothesize	hypothesize	VERB
ajst-6855	68	22	that	that	SCONJ
ajst-6855	68	23	the	the	DET
ajst-6855	68	24	observed	observed	ADJ
ajst-6855	68	25	results	result	NOUN
ajst-6855	68	26	can	can	AUX
ajst-6855	68	27	be	be	AUX
ajst-6855	68	28	attributed	attribute	VERB
ajst-6855	68	29	to	to	ADP
ajst-6855	68	30	the	the	DET
ajst-6855	68	31	interaction	interaction	NOUN
ajst-6855	68	32	between	between	ADP
ajst-6855	68	33	the	the	DET
ajst-6855	68	34	zeta	zeta	NOUN
ajst-6855	68	35	potential	potential	NOUN
ajst-6855	68	36	of	of	ADP
ajst-6855	68	37	the	the	DET
ajst-6855	68	38	si	si	PROPN
ajst-6855	68	39	surface	surface	NOUN
ajst-6855	68	40	of	of	ADP
ajst-6855	68	41	the	the	DET
ajst-6855	68	42	epitaxial	epitaxial	ADJ
ajst-6855	68	43	wafer	wafer	NOUN
ajst-6855	68	44	and	and	CCONJ
ajst-6855	68	45	that	that	PRON
ajst-6855	68	46	of	of	ADP
ajst-6855	68	47	the	the	DET
ajst-6855	68	48	ps	ps	PROPN
ajst-6855	68	49	spheres[13	spheres[13	PROPN
ajst-6855	68	50	]	]	PUNCT
ajst-6855	68	51	.	.	PUNCT
ajst-6855	69	1	to	to	PART
ajst-6855	69	2	confirm	confirm	VERB
ajst-6855	69	3	this	this	DET
ajst-6855	69	4	hypothesis	hypothesis	NOUN
ajst-6855	69	5	,	,	PUNCT
ajst-6855	69	6	we	we	PRON
ajst-6855	69	7	measured	measure	VERB
ajst-6855	69	8	the	the	DET
ajst-6855	69	9	zeta	zeta	NOUN
ajst-6855	69	10	potential	potential	NOUN
ajst-6855	69	11	of	of	ADP
ajst-6855	69	12	the	the	DET
ajst-6855	69	13	si	si	PROPN
ajst-6855	69	14	surface	surface	NOUN
ajst-6855	69	15	of	of	ADP
ajst-6855	69	16	the	the	DET
ajst-6855	69	17	epitaxial	epitaxial	ADJ
ajst-6855	69	18	wafer	wafer	NOUN
ajst-6855	69	19	in	in	ADP
ajst-6855	69	20	solutions	solution	NOUN
ajst-6855	69	21	of	of	ADP
ajst-6855	69	22	varying	vary	VERB
ajst-6855	69	23	ph	ph	ADJ
ajst-6855	69	24	values	value	NOUN
ajst-6855	69	25	and	and	CCONJ
ajst-6855	69	26	compared	compare	VERB
ajst-6855	69	27	it	it	PRON
ajst-6855	69	28	with	with	ADP
ajst-6855	69	29	the	the	DET
ajst-6855	69	30	zeta	zeta	PROPN
ajst-6855	69	31	potential	potential	NOUN
ajst-6855	69	32	of	of	ADP
ajst-6855	69	33	the	the	DET
ajst-6855	69	34	ps	ps	PROPN
ajst-6855	69	35	spheres	sphere	NOUN
ajst-6855	69	36	under	under	ADP
ajst-6855	69	37	the	the	DET
ajst-6855	69	38	corresponding	corresponding	ADJ
ajst-6855	69	39	ph	ph	ADJ
ajst-6855	69	40	conditions	condition	NOUN
ajst-6855	69	41	.	.	PUNCT
ajst-6855	70	1	this	this	DET
ajst-6855	70	2	investigation	investigation	NOUN
ajst-6855	70	3	was	be	AUX
ajst-6855	70	4	carried	carry	VERB
ajst-6855	70	5	out	out	ADP
ajst-6855	70	6	to	to	PART
ajst-6855	70	7	better	well	ADV
ajst-6855	70	8	understand	understand	VERB
ajst-6855	70	9	the	the	DET
ajst-6855	70	10	mechanism	mechanism	NOUN
ajst-6855	70	11	behind	behind	ADP
ajst-6855	70	12	their	their	PRON
ajst-6855	70	13	interaction	interaction	NOUN
ajst-6855	70	14	.	.	PUNCT
ajst-6855	71	1	figure	figure	NOUN
ajst-6855	71	2	2	2	NUM
ajst-6855	71	3	.	.	X
ajst-6855	71	4	zeta	zeta	PROPN
ajst-6855	71	5	potential	potential	ADJ
ajst-6855	71	6	variation	variation	NOUN
ajst-6855	71	7	of	of	ADP
ajst-6855	71	8	ps	ps	PROPN
ajst-6855	71	9	spheres	sphere	NOUN
ajst-6855	71	10	and	and	CCONJ
ajst-6855	71	11	si	si	NOUN
ajst-6855	71	12	-	-	ADJ
ajst-6855	71	13	face	face	NOUN
ajst-6855	71	14	of	of	ADP
ajst-6855	71	15	sic	sic	ADJ
ajst-6855	71	16	epitaxial	epitaxial	ADJ
ajst-6855	71	17	wafers	wafer	NOUN
ajst-6855	71	18	with	with	ADP
ajst-6855	71	19	ph	ph	ADJ
ajst-6855	71	20	figure	figure	NOUN
ajst-6855	71	21	2	2	NUM
ajst-6855	71	22	illustrates	illustrate	VERB
ajst-6855	71	23	the	the	DET
ajst-6855	71	24	zeta	zeta	PROPN
ajst-6855	71	25	potential	potential	ADJ
ajst-6855	71	26	variation	variation	NOUN
ajst-6855	71	27	of	of	ADP
ajst-6855	71	28	the	the	DET
ajst-6855	71	29	ps	ps	PROPN
ajst-6855	71	30	spheres	sphere	NOUN
ajst-6855	71	31	and	and	CCONJ
ajst-6855	71	32	the	the	DET
ajst-6855	71	33	si	si	PROPN
ajst-6855	71	34	surface	surface	NOUN
ajst-6855	71	35	of	of	ADP
ajst-6855	71	36	the	the	DET
ajst-6855	71	37	epitaxial	epitaxial	ADJ
ajst-6855	71	38	wafer	wafer	NOUN
ajst-6855	71	39	as	as	ADP
ajst-6855	71	40	a	a	DET
ajst-6855	71	41	function	function	NOUN
ajst-6855	71	42	of	of	ADP
ajst-6855	71	43	ph	ph	PROPN
ajst-6855	71	44	.	.	PUNCT
ajst-6855	72	1	both	both	DET
ajst-6855	72	2	zeta	zeta	PROPN
ajst-6855	72	3	potentials	potential	VERB
ajst-6855	72	4	gradually	gradually	ADV
ajst-6855	72	5	decrease	decrease	VERB
ajst-6855	72	6	with	with	ADP
ajst-6855	72	7	increasing	increase	VERB
ajst-6855	72	8	ph	ph	VERB
ajst-6855	72	9	.	.	PROPN
ajst-6855	72	10	at	at	ADP
ajst-6855	72	11	ph	ph	PROPN
ajst-6855	72	12	2	2	NUM
ajst-6855	72	13	,	,	PUNCT
ajst-6855	72	14	the	the	DET
ajst-6855	72	15	zeta	zeta	NOUN
ajst-6855	72	16	potential	potential	NOUN
ajst-6855	72	17	of	of	ADP
ajst-6855	72	18	the	the	DET
ajst-6855	72	19	ps	ps	PROPN
ajst-6855	72	20	spheres	sphere	NOUN
ajst-6855	72	21	is	be	AUX
ajst-6855	72	22	positive	positive	ADJ
ajst-6855	72	23	,	,	PUNCT
ajst-6855	72	24	while	while	SCONJ
ajst-6855	72	25	that	that	PRON
ajst-6855	72	26	of	of	ADP
ajst-6855	72	27	the	the	DET
ajst-6855	72	28	si	si	PROPN
ajst-6855	72	29	surface	surface	NOUN
ajst-6855	72	30	of	of	ADP
ajst-6855	72	31	the	the	DET
ajst-6855	72	32	epitaxial	epitaxial	ADJ
ajst-6855	72	33	wafer	wafer	NOUN
ajst-6855	72	34	is	be	AUX
ajst-6855	72	35	negative	negative	ADJ
ajst-6855	72	36	,	,	PUNCT
ajst-6855	72	37	creating	create	VERB
ajst-6855	72	38	an	an	DET
ajst-6855	72	39	electrical	electrical	ADJ
ajst-6855	72	40	attraction	attraction	NOUN
ajst-6855	72	41	between	between	ADP
ajst-6855	72	42	them	they	PRON
ajst-6855	72	43	.	.	PUNCT
ajst-6855	73	1	consequently	consequently	ADV
ajst-6855	73	2	,	,	PUNCT
ajst-6855	73	3	a	a	DET
ajst-6855	73	4	large	large	ADJ
ajst-6855	73	5	number	number	NOUN
ajst-6855	73	6	of	of	ADP
ajst-6855	73	7	ps	ps	PROPN
ajst-6855	73	8	spheres	sphere	NOUN
ajst-6855	73	9	are	be	AUX
ajst-6855	73	10	adsorbed	adsorb	VERB
ajst-6855	73	11	onto	onto	ADP
ajst-6855	73	12	the	the	DET
ajst-6855	73	13	si	si	PROPN
ajst-6855	73	14	surface	surface	NOUN
ajst-6855	73	15	of	of	ADP
ajst-6855	73	16	the	the	DET
ajst-6855	73	17	epitaxial	epitaxial	ADJ
ajst-6855	73	18	wafer	wafer	NOUN
ajst-6855	73	19	.	.	PUNCT
ajst-6855	74	1	at	at	ADP
ajst-6855	74	2	ph	ph	PROPN
ajst-6855	74	3	7	7	NUM
ajst-6855	74	4	and	and	CCONJ
ajst-6855	74	5	12	12	NUM
ajst-6855	74	6	,	,	PUNCT
ajst-6855	74	7	both	both	CCONJ
ajst-6855	74	8	the	the	DET
ajst-6855	74	9	ps	ps	NOUN
ajst-6855	74	10	spheres	sphere	NOUN
ajst-6855	74	11	and	and	CCONJ
ajst-6855	74	12	the	the	DET
ajst-6855	74	13	si	si	PROPN
ajst-6855	74	14	surface	surface	NOUN
ajst-6855	74	15	of	of	ADP
ajst-6855	74	16	the	the	DET
ajst-6855	74	17	epitaxial	epitaxial	ADJ
ajst-6855	74	18	wafer	wafer	NOUN
ajst-6855	74	19	exhibit	exhibit	VERB
ajst-6855	74	20	negative	negative	ADJ
ajst-6855	74	21	zeta	zeta	PROPN
ajst-6855	74	22	potentials	potential	NOUN
ajst-6855	74	23	,	,	PUNCT
ajst-6855	74	24	resulting	result	VERB
ajst-6855	74	25	in	in	ADP
ajst-6855	74	26	electrical	electrical	ADJ
ajst-6855	74	27	repulsion	repulsion	NOUN
ajst-6855	74	28	between	between	ADP
ajst-6855	74	29	them	they	PRON
ajst-6855	74	30	.	.	PUNCT
ajst-6855	75	1	moreover	moreover	ADV
ajst-6855	75	2	,	,	PUNCT
ajst-6855	75	3	the	the	DET
ajst-6855	75	4	absolute	absolute	ADJ
ajst-6855	75	5	value	value	NOUN
ajst-6855	75	6	of	of	ADP
ajst-6855	75	7	the	the	DET
ajst-6855	75	8	zeta	zeta	NOUN
ajst-6855	75	9	potential	potential	NOUN
ajst-6855	75	10	of	of	ADP
ajst-6855	75	11	the	the	DET
ajst-6855	75	12	si	si	PROPN
ajst-6855	75	13	surface	surface	NOUN
ajst-6855	75	14	of	of	ADP
ajst-6855	75	15	the	the	DET
ajst-6855	75	16	epitaxial	epitaxial	ADJ
ajst-6855	75	17	wafer	wafer	NOUN
ajst-6855	75	18	significantly	significantly	ADV
ajst-6855	75	19	increases	increase	VERB
ajst-6855	75	20	at	at	ADP
ajst-6855	75	21	ph	ph	PROPN
ajst-6855	75	22	12	12	NUM
ajst-6855	75	23	,	,	PUNCT
ajst-6855	75	24	which	which	PRON
ajst-6855	75	25	strengthens	strengthen	VERB
ajst-6855	75	26	the	the	DET
ajst-6855	75	27	electrical	electrical	ADJ
ajst-6855	75	28	repulsion	repulsion	NOUN
ajst-6855	75	29	.	.	PUNCT
ajst-6855	76	1	consequently	consequently	ADV
ajst-6855	76	2	,	,	PUNCT
ajst-6855	76	3	only	only	ADV
ajst-6855	76	4	a	a	DET
ajst-6855	76	5	small	small	ADJ
ajst-6855	76	6	number	number	NOUN
ajst-6855	76	7	of	of	ADP
ajst-6855	76	8	ps	ps	PROPN
ajst-6855	76	9	spheres	sphere	NOUN
ajst-6855	76	10	are	be	AUX
ajst-6855	76	11	adsorbed	adsorb	VERB
ajst-6855	76	12	on	on	ADP
ajst-6855	76	13	the	the	DET
ajst-6855	76	14	epitaxial	epitaxial	ADJ
ajst-6855	76	15	wafer	wafer	NOUN
ajst-6855	76	16	surface	surface	NOUN
ajst-6855	76	17	.	.	PUNCT
ajst-6855	77	1	these	these	DET
ajst-6855	77	2	findings	finding	NOUN
ajst-6855	77	3	suggest	suggest	VERB
ajst-6855	77	4	that	that	SCONJ
ajst-6855	77	5	the	the	DET
ajst-6855	77	6	zeta	zeta	NOUN
ajst-6855	77	7	potential	potential	NOUN
ajst-6855	77	8	is	be	AUX
ajst-6855	77	9	a	a	DET
ajst-6855	77	10	crucial	crucial	ADJ
ajst-6855	77	11	factor	factor	NOUN
ajst-6855	77	12	in	in	ADP
ajst-6855	77	13	the	the	DET
ajst-6855	77	14	mechanism	mechanism	NOUN
ajst-6855	77	15	of	of	ADP
ajst-6855	77	16	particle	particle	NOUN
ajst-6855	77	17	adsorption	adsorption	NOUN
ajst-6855	77	18	onto	onto	ADP
ajst-6855	77	19	the	the	DET
ajst-6855	77	20	epitaxial	epitaxial	ADJ
ajst-6855	77	21	wafer	wafer	NOUN
ajst-6855	77	22	.	.	PUNCT
ajst-6855	78	1	in	in	ADP
ajst-6855	78	2	actual	actual	ADJ
ajst-6855	78	3	production	production	NOUN
ajst-6855	78	4	processes	process	NOUN
ajst-6855	78	5	,	,	PUNCT
ajst-6855	78	6	the	the	DET
ajst-6855	78	7	particle	particle	NOUN
ajst-6855	78	8	pollutants	pollutant	NOUN
ajst-6855	78	9	on	on	ADP
ajst-6855	78	10	the	the	DET
ajst-6855	78	11	sic	sic	ADJ
ajst-6855	78	12	wafer	wafer	NOUN
ajst-6855	78	13	surface	surface	NOUN
ajst-6855	78	14	mainly	mainly	ADV
ajst-6855	78	15	consist	consist	VERB
ajst-6855	78	16	of	of	ADP
ajst-6855	78	17	sio2	sio2	PROPN
ajst-6855	78	18	,	,	PUNCT
ajst-6855	78	19	al2o3	al2o3	NOUN
ajst-6855	78	20	,	,	PUNCT
ajst-6855	78	21	ceo2	ceo2	NOUN
ajst-6855	78	22	,	,	PUNCT
ajst-6855	78	23	and	and	CCONJ
ajst-6855	78	24	other	other	ADJ
ajst-6855	78	25	similar	similar	ADJ
ajst-6855	78	26	materials	material	NOUN
ajst-6855	78	27	.	.	PUNCT
ajst-6855	79	1	investigating	investigate	VERB
ajst-6855	79	2	the	the	DET
ajst-6855	79	3	zeta	zeta	NOUN
ajst-6855	79	4	potential	potential	ADJ
ajst-6855	79	5	interaction	interaction	NOUN
ajst-6855	79	6	mechanism	mechanism	NOUN
ajst-6855	79	7	between	between	ADP
ajst-6855	79	8	these	these	DET
ajst-6855	79	9	particle	particle	NOUN
ajst-6855	79	10	pollutants	pollutant	NOUN
ajst-6855	79	11	and	and	CCONJ
ajst-6855	79	12	the	the	DET
ajst-6855	79	13	epitaxial	epitaxial	ADJ
ajst-6855	79	14	wafer	wafer	NOUN
ajst-6855	79	15	can	can	AUX
ajst-6855	79	16	help	help	VERB
ajst-6855	79	17	to	to	PART
ajst-6855	79	18	enhance	enhance	VERB
ajst-6855	79	19	the	the	DET
ajst-6855	79	20	wafer	wafer	NOUN
ajst-6855	79	21	cleaning	cleaning	NOUN
ajst-6855	79	22	effect	effect	NOUN
ajst-6855	79	23	.	.	PUNCT
ajst-6855	80	1	figure	figure	NOUN
ajst-6855	80	2	3	3	NUM
ajst-6855	80	3	shows	show	VERB
ajst-6855	80	4	the	the	DET
ajst-6855	80	5	zeta	zeta	PROPN
ajst-6855	80	6	potential	potential	NOUN
ajst-6855	80	7	of	of	ADP
ajst-6855	80	8	sio2	sio2	PROPN
ajst-6855	80	9	,	,	PUNCT
ajst-6855	80	10	al2o3	al2o3	PROPN
ajst-6855	80	11	,	,	PUNCT
ajst-6855	80	12	and	and	CCONJ
ajst-6855	80	13	ceo2	ceo2	NOUN
ajst-6855	80	14	measured	measure	VERB
ajst-6855	80	15	by	by	ADP
ajst-6855	80	16	various	various	ADJ
ajst-6855	80	17	researchers	researcher	NOUN
ajst-6855	80	18	under	under	ADP
ajst-6855	80	19	different	different	ADJ
ajst-6855	80	20	ph	ph	ADJ
ajst-6855	80	21	conditions[14	conditions[14	PROPN
ajst-6855	80	22	-	-	PUNCT
ajst-6855	80	23	16	16	NUM
ajst-6855	80	24	]	]	PUNCT
ajst-6855	80	25	.	.	PUNCT
ajst-6855	81	1	figure	figure	NOUN
ajst-6855	81	2	3	3	NUM
ajst-6855	81	3	.	.	X
ajst-6855	81	4	zeta	zeta	PROPN
ajst-6855	81	5	potential	potential	ADJ
ajst-6855	81	6	variation	variation	NOUN
ajst-6855	81	7	with	with	ADP
ajst-6855	81	8	ph	ph	NOUN
ajst-6855	81	9	for	for	ADP
ajst-6855	81	10	common	common	ADJ
ajst-6855	81	11	contaminant	contaminant	ADJ
ajst-6855	81	12	particles	particle	NOUN
ajst-6855	81	13	in	in	ADP
ajst-6855	81	14	figure	figure	NOUN
ajst-6855	81	15	3	3	NUM
ajst-6855	81	16	,	,	PUNCT
ajst-6855	81	17	it	it	PRON
ajst-6855	81	18	can	can	AUX
ajst-6855	81	19	be	be	AUX
ajst-6855	81	20	observed	observe	VERB
ajst-6855	81	21	that	that	SCONJ
ajst-6855	81	22	when	when	SCONJ
ajst-6855	81	23	the	the	DET
ajst-6855	81	24	ph	ph	ADJ
ajst-6855	81	25	value	value	NOUN
ajst-6855	81	26	is	be	AUX
ajst-6855	81	27	2	2	NUM
ajst-6855	81	28	,	,	PUNCT
ajst-6855	81	29	the	the	DET
ajst-6855	81	30	zeta	zeta	NOUN
ajst-6855	81	31	potentials	potential	VERB
ajst-6855	81	32	of	of	ADP
ajst-6855	81	33	the	the	DET
ajst-6855	81	34	three	three	NUM
ajst-6855	81	35	types	type	NOUN
ajst-6855	81	36	of	of	ADP
ajst-6855	81	37	particles	particle	NOUN
ajst-6855	81	38	are	be	AUX
ajst-6855	81	39	positive	positive	ADJ
ajst-6855	81	40	,	,	PUNCT
ajst-6855	81	41	while	while	SCONJ
ajst-6855	81	42	they	they	PRON
ajst-6855	81	43	are	be	AUX
ajst-6855	81	44	negative	negative	ADJ
ajst-6855	81	45	when	when	SCONJ
ajst-6855	81	46	the	the	DET
ajst-6855	81	47	ph	ph	ADJ
ajst-6855	81	48	value	value	NOUN
ajst-6855	81	49	is	be	AUX
ajst-6855	81	50	12	12	NUM
ajst-6855	81	51	.	.	PUNCT
ajst-6855	82	1	this	this	DET
ajst-6855	82	2	trend	trend	NOUN
ajst-6855	82	3	is	be	AUX
ajst-6855	82	4	similar	similar	ADJ
ajst-6855	82	5	to	to	ADP
ajst-6855	82	6	that	that	PRON
ajst-6855	82	7	observed	observe	VERB
ajst-6855	82	8	for	for	ADP
ajst-6855	82	9	the	the	DET
ajst-6855	82	10	zeta	zeta	NOUN
ajst-6855	82	11	potential	potential	ADJ
ajst-6855	82	12	changes	change	NOUN
ajst-6855	82	13	of	of	ADP
ajst-6855	82	14	the	the	DET
ajst-6855	82	15	ps	ps	PROPN
ajst-6855	82	16	spheres	sphere	NOUN
ajst-6855	82	17	.	.	PUNCT
ajst-6855	83	1	however	however	ADV
ajst-6855	83	2	,	,	PUNCT
ajst-6855	83	3	in	in	ADP
ajst-6855	83	4	the	the	DET
ajst-6855	83	5	sic	sic	ADJ
ajst-6855	83	6	wafer	wafer	NOUN
ajst-6855	83	7	cleaning	cleaning	NOUN
ajst-6855	83	8	process	process	NOUN
ajst-6855	83	9	,	,	PUNCT
ajst-6855	83	10	the	the	DET
ajst-6855	83	11	ph	ph	ADJ
ajst-6855	83	12	value	value	NOUN
ajst-6855	83	13	of	of	ADP
ajst-6855	83	14	the	the	DET
ajst-6855	83	15	sc1	sc1	NOUN
ajst-6855	83	16	cleaning	cleaning	NOUN
ajst-6855	83	17	solution	solution	NOUN
ajst-6855	83	18	is	be	AUX
ajst-6855	83	19	greater	great	ADJ
ajst-6855	83	20	than	than	ADP
ajst-6855	83	21	12	12	NUM
ajst-6855	83	22	,	,	PUNCT
ajst-6855	83	23	while	while	SCONJ
ajst-6855	83	24	that	that	PRON
ajst-6855	83	25	of	of	ADP
ajst-6855	83	26	the	the	DET
ajst-6855	83	27	sc2	sc2	NOUN
ajst-6855	83	28	cleaning	cleaning	NOUN
ajst-6855	83	29	solution	solution	NOUN
ajst-6855	83	30	is	be	AUX
ajst-6855	83	31	less	less	ADJ
ajst-6855	83	32	than	than	ADP
ajst-6855	83	33	2	2	NUM
ajst-6855	83	34	.	.	PUNCT
ajst-6855	84	1	hence	hence	ADV
ajst-6855	84	2	,	,	PUNCT
ajst-6855	84	3	we	we	PRON
ajst-6855	84	4	hypothesize	hypothesize	VERB
ajst-6855	84	5	that	that	SCONJ
ajst-6855	84	6	the	the	DET
ajst-6855	84	7	epitaxial	epitaxial	ADJ
ajst-6855	84	8	wafer	wafer	NOUN
ajst-6855	84	9	and	and	CCONJ
ajst-6855	84	10	the	the	DET
ajst-6855	84	11	161	161	NUM
ajst-6855	84	12	aforementioned	aforementioned	ADJ
ajst-6855	84	13	contaminating	contaminate	VERB
ajst-6855	84	14	particles	particle	NOUN
ajst-6855	84	15	possess	possess	VERB
ajst-6855	84	16	differing	differ	VERB
ajst-6855	84	17	zeta	zeta	NOUN
ajst-6855	84	18	potentials	potential	VERB
ajst-6855	84	19	in	in	ADP
ajst-6855	84	20	the	the	DET
ajst-6855	84	21	sc2	sc2	NOUN
ajst-6855	84	22	(	(	PUNCT
ajst-6855	84	23	acidic	acidic	ADJ
ajst-6855	84	24	)	)	PUNCT
ajst-6855	84	25	cleaning	cleaning	NOUN
ajst-6855	84	26	solution	solution	NOUN
ajst-6855	84	27	,	,	PUNCT
ajst-6855	84	28	resulting	result	VERB
ajst-6855	84	29	in	in	ADP
ajst-6855	84	30	electrostatic	electrostatic	ADJ
ajst-6855	84	31	attraction	attraction	NOUN
ajst-6855	84	32	between	between	ADP
ajst-6855	84	33	the	the	DET
ajst-6855	84	34	two	two	NUM
ajst-6855	84	35	.	.	PUNCT
ajst-6855	85	1	although	although	SCONJ
ajst-6855	85	2	sc2	sc2	NOUN
ajst-6855	85	3	can	can	AUX
ajst-6855	85	4	remove	remove	VERB
ajst-6855	85	5	metal	metal	NOUN
ajst-6855	85	6	ion	ion	NOUN
ajst-6855	85	7	contamination	contamination	NOUN
ajst-6855	85	8	from	from	ADP
ajst-6855	85	9	the	the	DET
ajst-6855	85	10	surface	surface	NOUN
ajst-6855	85	11	of	of	ADP
ajst-6855	85	12	the	the	DET
ajst-6855	85	13	epitaxial	epitaxial	ADJ
ajst-6855	85	14	wafer	wafer	NOUN
ajst-6855	85	15	,	,	PUNCT
ajst-6855	85	16	it	it	PRON
ajst-6855	85	17	may	may	AUX
ajst-6855	85	18	increase	increase	VERB
ajst-6855	85	19	the	the	DET
ajst-6855	85	20	number	number	NOUN
ajst-6855	85	21	of	of	ADP
ajst-6855	85	22	contaminating	contaminate	VERB
ajst-6855	85	23	particles	particle	NOUN
ajst-6855	85	24	on	on	ADP
ajst-6855	85	25	the	the	DET
ajst-6855	85	26	si	si	PROPN
ajst-6855	85	27	surface	surface	NOUN
ajst-6855	85	28	.	.	PUNCT
ajst-6855	86	1	conversely	conversely	ADV
ajst-6855	86	2	,	,	PUNCT
ajst-6855	86	3	in	in	ADP
ajst-6855	86	4	the	the	DET
ajst-6855	86	5	alkaline	alkaline	NOUN
ajst-6855	86	6	sc1	sc1	NOUN
ajst-6855	86	7	cleaning	cleaning	NOUN
ajst-6855	86	8	solution	solution	NOUN
ajst-6855	86	9	,	,	PUNCT
ajst-6855	86	10	both	both	CCONJ
ajst-6855	86	11	the	the	DET
ajst-6855	86	12	epitaxial	epitaxial	ADJ
ajst-6855	86	13	wafer	wafer	NOUN
ajst-6855	86	14	si	si	NOUN
ajst-6855	86	15	surface	surface	NOUN
ajst-6855	86	16	and	and	CCONJ
ajst-6855	86	17	the	the	DET
ajst-6855	86	18	aforementioned	aforementioned	ADJ
ajst-6855	86	19	contaminating	contaminating	NOUN
ajst-6855	86	20	particles	particle	NOUN
ajst-6855	86	21	possess	possess	VERB
ajst-6855	86	22	negative	negative	ADJ
ajst-6855	86	23	zeta	zeta	NOUN
ajst-6855	86	24	potentials	potential	NOUN
ajst-6855	86	25	,	,	PUNCT
ajst-6855	86	26	resulting	result	VERB
ajst-6855	86	27	in	in	ADP
ajst-6855	86	28	electrostatic	electrostatic	ADJ
ajst-6855	86	29	repulsion	repulsion	NOUN
ajst-6855	86	30	between	between	ADP
ajst-6855	86	31	them	they	PRON
ajst-6855	86	32	.	.	PUNCT
ajst-6855	87	1	therefore	therefore	ADV
ajst-6855	87	2	,	,	PUNCT
ajst-6855	87	3	the	the	DET
ajst-6855	87	4	sc1	sc1	NOUN
ajst-6855	87	5	process	process	NOUN
ajst-6855	87	6	can	can	AUX
ajst-6855	87	7	effectively	effectively	ADV
ajst-6855	87	8	remove	remove	VERB
ajst-6855	87	9	contaminating	contaminate	VERB
ajst-6855	87	10	particles	particle	NOUN
ajst-6855	87	11	from	from	ADP
ajst-6855	87	12	the	the	DET
ajst-6855	87	13	si	si	PROPN
ajst-6855	87	14	surface	surface	NOUN
ajst-6855	87	15	.	.	PUNCT
ajst-6855	88	1	to	to	PART
ajst-6855	88	2	verify	verify	VERB
ajst-6855	88	3	this	this	DET
ajst-6855	88	4	hypothesis	hypothesis	NOUN
ajst-6855	88	5	,	,	PUNCT
ajst-6855	88	6	we	we	PRON
ajst-6855	88	7	conducted	conduct	VERB
ajst-6855	88	8	further	further	ADJ
ajst-6855	88	9	experiments	experiment	NOUN
ajst-6855	88	10	under	under	ADP
ajst-6855	88	11	the	the	DET
ajst-6855	88	12	conditions	condition	NOUN
ajst-6855	88	13	presented	present	VERB
ajst-6855	88	14	in	in	ADP
ajst-6855	88	15	table	table	NOUN
ajst-6855	88	16	1	1	NUM
ajst-6855	88	17	.	.	PUNCT
ajst-6855	88	18	figure	figure	VERB
ajst-6855	88	19	4	4	NUM
ajst-6855	88	20	.	.	PUNCT
ajst-6855	89	1	the	the	DET
ajst-6855	89	2	number	number	NOUN
ajst-6855	89	3	of	of	ADP
ajst-6855	89	4	remaining	remain	VERB
ajst-6855	89	5	particles	particle	NOUN
ajst-6855	89	6	on	on	ADP
ajst-6855	89	7	each	each	DET
ajst-6855	89	8	epitaxial	epitaxial	ADJ
ajst-6855	89	9	wafer	wafer	NOUN
ajst-6855	89	10	surface	surface	NOUN
ajst-6855	89	11	in	in	ADP
ajst-6855	89	12	figure	figure	NOUN
ajst-6855	89	13	4	4	NUM
ajst-6855	89	14	,	,	PUNCT
ajst-6855	89	15	the	the	DET
ajst-6855	89	16	number	number	NOUN
ajst-6855	89	17	of	of	ADP
ajst-6855	89	18	residual	residual	ADJ
ajst-6855	89	19	particles	particle	NOUN
ajst-6855	89	20	on	on	ADP
ajst-6855	89	21	the	the	DET
ajst-6855	89	22	si	si	PROPN
ajst-6855	89	23	surface	surface	NOUN
ajst-6855	89	24	for	for	ADP
ajst-6855	89	25	samples	sample	NOUN
ajst-6855	89	26	a	a	PRON
ajst-6855	89	27	-	-	PUNCT
ajst-6855	89	28	d	d	NOUN
ajst-6855	89	29	was	be	AUX
ajst-6855	89	30	1964	1964	NUM
ajst-6855	89	31	,	,	PUNCT
ajst-6855	89	32	324	324	NUM
ajst-6855	89	33	,	,	PUNCT
ajst-6855	89	34	8231	8231	NUM
ajst-6855	89	35	,	,	PUNCT
ajst-6855	89	36	and	and	CCONJ
ajst-6855	89	37	385	385	NUM
ajst-6855	89	38	,	,	PUNCT
ajst-6855	89	39	respectively	respectively	ADV
ajst-6855	89	40	.	.	PUNCT
ajst-6855	90	1	the	the	DET
ajst-6855	90	2	results	result	NOUN
ajst-6855	90	3	indicate	indicate	VERB
ajst-6855	90	4	that	that	SCONJ
ajst-6855	90	5	samples	sample	NOUN
ajst-6855	90	6	b	b	NOUN
ajst-6855	90	7	and	and	CCONJ
ajst-6855	90	8	d	d	PROPN
ajst-6855	90	9	have	have	VERB
ajst-6855	90	10	the	the	DET
ajst-6855	90	11	best	good	ADJ
ajst-6855	90	12	particle	particle	NOUN
ajst-6855	90	13	removal	removal	NOUN
ajst-6855	90	14	effect	effect	NOUN
ajst-6855	90	15	on	on	ADP
ajst-6855	90	16	the	the	DET
ajst-6855	90	17	si	si	PROPN
ajst-6855	90	18	surface	surface	NOUN
ajst-6855	90	19	,	,	PUNCT
ajst-6855	90	20	followed	follow	VERB
ajst-6855	90	21	by	by	ADP
ajst-6855	90	22	sample	sample	NOUN
ajst-6855	90	23	a	a	PRON
ajst-6855	90	24	,	,	PUNCT
ajst-6855	90	25	while	while	SCONJ
ajst-6855	90	26	sample	sample	NOUN
ajst-6855	90	27	c	c	PROPN
ajst-6855	90	28	has	have	VERB
ajst-6855	90	29	the	the	DET
ajst-6855	90	30	poorest	poor	ADJ
ajst-6855	90	31	effect	effect	NOUN
ajst-6855	90	32	.	.	PUNCT
ajst-6855	91	1	sample	sample	NOUN
ajst-6855	91	2	b	b	NOUN
ajst-6855	91	3	only	only	ADV
ajst-6855	91	4	underwent	undergo	VERB
ajst-6855	91	5	the	the	DET
ajst-6855	91	6	spm	spm	PROPN
ajst-6855	91	7	and	and	CCONJ
ajst-6855	91	8	sc1	sc1	PROPN
ajst-6855	91	9	cleaning	cleaning	NOUN
ajst-6855	91	10	processes	process	NOUN
ajst-6855	91	11	,	,	PUNCT
ajst-6855	91	12	whereas	whereas	SCONJ
ajst-6855	91	13	sample	sample	NOUN
ajst-6855	91	14	d	d	NOUN
ajst-6855	91	15	had	have	VERB
ajst-6855	91	16	an	an	DET
ajst-6855	91	17	additional	additional	ADJ
ajst-6855	91	18	sc2	sc2	NOUN
ajst-6855	91	19	process	process	NOUN
ajst-6855	91	20	between	between	ADP
ajst-6855	91	21	spm	spm	PROPN
ajst-6855	91	22	and	and	CCONJ
ajst-6855	91	23	sc1	sc1	PROPN
ajst-6855	91	24	.	.	PUNCT
ajst-6855	92	1	the	the	DET
ajst-6855	92	2	cleaning	cleaning	NOUN
ajst-6855	92	3	results	result	NOUN
ajst-6855	92	4	show	show	VERB
ajst-6855	92	5	that	that	SCONJ
ajst-6855	92	6	the	the	DET
ajst-6855	92	7	addition	addition	NOUN
ajst-6855	92	8	of	of	ADP
ajst-6855	92	9	an	an	DET
ajst-6855	92	10	sc2	sc2	NOUN
ajst-6855	92	11	process	process	NOUN
ajst-6855	92	12	hardly	hardly	ADV
ajst-6855	92	13	affects	affect	VERB
ajst-6855	92	14	the	the	DET
ajst-6855	92	15	particle	particle	NOUN
ajst-6855	92	16	removal	removal	NOUN
ajst-6855	92	17	effect	effect	NOUN
ajst-6855	92	18	of	of	ADP
ajst-6855	92	19	the	the	DET
ajst-6855	92	20	sc1	sc1	NOUN
ajst-6855	92	21	process	process	NOUN
ajst-6855	92	22	.	.	PUNCT
ajst-6855	93	1	compared	compare	VERB
ajst-6855	93	2	with	with	ADP
ajst-6855	93	3	sample	sample	NOUN
ajst-6855	93	4	a	a	PRON
ajst-6855	93	5	,	,	PUNCT
ajst-6855	93	6	which	which	PRON
ajst-6855	93	7	was	be	AUX
ajst-6855	93	8	processed	process	VERB
ajst-6855	93	9	by	by	ADP
ajst-6855	93	10	the	the	DET
ajst-6855	93	11	traditional	traditional	ADJ
ajst-6855	93	12	rca	rca	NOUN
ajst-6855	93	13	process	process	NOUN
ajst-6855	93	14	,	,	PUNCT
ajst-6855	93	15	sample	sample	NOUN
ajst-6855	93	16	d	d	NOUN
ajst-6855	93	17	processed	process	VERB
ajst-6855	93	18	by	by	ADP
ajst-6855	93	19	the	the	DET
ajst-6855	93	20	optimized	optimize	VERB
ajst-6855	93	21	process	process	NOUN
ajst-6855	93	22	reduced	reduce	VERB
ajst-6855	93	23	surface	surface	NOUN
ajst-6855	93	24	particles	particle	NOUN
ajst-6855	93	25	by	by	ADP
ajst-6855	93	26	80.4	80.4	NUM
ajst-6855	93	27	%	%	NOUN
ajst-6855	93	28	and	and	CCONJ
ajst-6855	93	29	removed	remove	VERB
ajst-6855	93	30	metal	metal	NOUN
ajst-6855	93	31	ion	ion	NOUN
ajst-6855	93	32	contamination	contamination	NOUN
ajst-6855	93	33	.	.	PUNCT
ajst-6855	94	1	sample	sample	NOUN
ajst-6855	94	2	c	c	PROPN
ajst-6855	94	3	only	only	ADV
ajst-6855	94	4	underwent	undergo	VERB
ajst-6855	94	5	the	the	DET
ajst-6855	94	6	spm	spm	PROPN
ajst-6855	94	7	and	and	CCONJ
ajst-6855	94	8	sc2	sc2	PROPN
ajst-6855	94	9	cleaning	cleaning	NOUN
ajst-6855	94	10	processes	process	NOUN
ajst-6855	94	11	,	,	PUNCT
ajst-6855	94	12	and	and	CCONJ
ajst-6855	94	13	the	the	DET
ajst-6855	94	14	number	number	NOUN
ajst-6855	94	15	of	of	ADP
ajst-6855	94	16	surface	surface	NOUN
ajst-6855	94	17	particles	particle	NOUN
ajst-6855	94	18	was	be	AUX
ajst-6855	94	19	significantly	significantly	ADV
ajst-6855	94	20	higher	high	ADJ
ajst-6855	94	21	than	than	ADP
ajst-6855	94	22	that	that	PRON
ajst-6855	94	23	of	of	ADP
ajst-6855	94	24	the	the	DET
ajst-6855	94	25	other	other	ADJ
ajst-6855	94	26	three	three	NUM
ajst-6855	94	27	groups	group	NOUN
ajst-6855	94	28	,	,	PUNCT
ajst-6855	94	29	which	which	PRON
ajst-6855	94	30	confirms	confirm	VERB
ajst-6855	94	31	reinhardt	reinhardt	PROPN
ajst-6855	94	32	's	's	PART
ajst-6855	94	33	conjecture	conjecture	NOUN
ajst-6855	94	34	that	that	SCONJ
ajst-6855	94	35	sc2	sc2	NOUN
ajst-6855	94	36	is	be	AUX
ajst-6855	94	37	mainly	mainly	ADV
ajst-6855	94	38	used	use	VERB
ajst-6855	94	39	to	to	PART
ajst-6855	94	40	remove	remove	VERB
ajst-6855	94	41	metal	metal	NOUN
ajst-6855	94	42	ions	ion	NOUN
ajst-6855	94	43	.	.	PUNCT
ajst-6855	95	1	additionally	additionally	ADV
ajst-6855	95	2	,	,	PUNCT
ajst-6855	95	3	comparing	compare	VERB
ajst-6855	95	4	the	the	DET
ajst-6855	95	5	number	number	NOUN
ajst-6855	95	6	of	of	ADP
ajst-6855	95	7	residual	residual	ADJ
ajst-6855	95	8	particles	particle	NOUN
ajst-6855	95	9	on	on	ADP
ajst-6855	95	10	the	the	DET
ajst-6855	95	11	si	si	PROPN
ajst-6855	95	12	surface	surface	NOUN
ajst-6855	95	13	of	of	ADP
ajst-6855	95	14	samples	sample	NOUN
ajst-6855	95	15	a	a	PRON
ajst-6855	95	16	and	and	CCONJ
ajst-6855	95	17	b	b	NOUN
ajst-6855	95	18	shows	show	VERB
ajst-6855	95	19	that	that	SCONJ
ajst-6855	95	20	the	the	DET
ajst-6855	95	21	sc2	sc2	NOUN
ajst-6855	95	22	process	process	NOUN
ajst-6855	95	23	will	will	AUX
ajst-6855	95	24	increase	increase	VERB
ajst-6855	95	25	the	the	DET
ajst-6855	95	26	particle	particle	NOUN
ajst-6855	95	27	contamination	contamination	NOUN
ajst-6855	95	28	on	on	ADP
ajst-6855	95	29	the	the	DET
ajst-6855	95	30	epitaxial	epitaxial	ADJ
ajst-6855	95	31	si	si	X
ajst-6855	95	32	surface	surface	NOUN
ajst-6855	95	33	,	,	PUNCT
ajst-6855	95	34	which	which	PRON
ajst-6855	95	35	also	also	ADV
ajst-6855	95	36	confirms	confirm	VERB
ajst-6855	95	37	our	our	PRON
ajst-6855	95	38	aforementioned	aforementioned	ADJ
ajst-6855	95	39	conjecture	conjecture	NOUN
ajst-6855	95	40	.	.	PUNCT
ajst-6855	96	1	from	from	ADP
ajst-6855	96	2	the	the	DET
ajst-6855	96	3	above	above	NOUN
ajst-6855	96	4	,	,	PUNCT
ajst-6855	96	5	it	it	PRON
ajst-6855	96	6	can	can	AUX
ajst-6855	96	7	be	be	AUX
ajst-6855	96	8	concluded	conclude	VERB
ajst-6855	96	9	that	that	SCONJ
ajst-6855	96	10	the	the	DET
ajst-6855	96	11	cleaning	cleaning	NOUN
ajst-6855	96	12	process	process	NOUN
ajst-6855	96	13	in	in	ADP
ajst-6855	96	14	the	the	DET
ajst-6855	96	15	order	order	NOUN
ajst-6855	96	16	of	of	ADP
ajst-6855	96	17	spm	spm	PROPN
ajst-6855	96	18	-	-	ADJ
ajst-6855	96	19	sc2	sc2	NOUN
ajst-6855	96	20	-	-	PUNCT
ajst-6855	96	21	sc1	sc1	NOUN
ajst-6855	96	22	is	be	AUX
ajst-6855	96	23	beneficial	beneficial	ADJ
ajst-6855	96	24	for	for	ADP
ajst-6855	96	25	removing	remove	VERB
ajst-6855	96	26	particle	particle	NOUN
ajst-6855	96	27	contamination	contamination	NOUN
ajst-6855	96	28	on	on	ADP
ajst-6855	96	29	the	the	DET
ajst-6855	96	30	epitaxial	epitaxial	ADJ
ajst-6855	96	31	si	si	NOUN
ajst-6855	96	32	surface	surface	NOUN
ajst-6855	96	33	.	.	PUNCT
ajst-6855	97	1	4	4	X
ajst-6855	97	2	.	.	X
ajst-6855	97	3	summary	summary	NOUN
ajst-6855	97	4	in	in	ADP
ajst-6855	97	5	this	this	DET
ajst-6855	97	6	study	study	NOUN
ajst-6855	97	7	,	,	PUNCT
ajst-6855	97	8	we	we	PRON
ajst-6855	97	9	have	have	AUX
ajst-6855	97	10	identified	identify	VERB
ajst-6855	97	11	significant	significant	ADJ
ajst-6855	97	12	differences	difference	NOUN
ajst-6855	97	13	in	in	ADP
ajst-6855	97	14	the	the	DET
ajst-6855	97	15	adsorption	adsorption	NOUN
ajst-6855	97	16	of	of	ADP
ajst-6855	97	17	ps	ps	PROPN
ajst-6855	97	18	spheres	sphere	NOUN
ajst-6855	97	19	on	on	ADP
ajst-6855	97	20	sic	sic	ADJ
ajst-6855	97	21	epitaxial	epitaxial	ADJ
ajst-6855	97	22	wafers	wafer	NOUN
ajst-6855	97	23	in	in	ADP
ajst-6855	97	24	acidic	acidic	ADJ
ajst-6855	97	25	and	and	CCONJ
ajst-6855	97	26	alkaline	alkaline	NOUN
ajst-6855	97	27	solutions	solution	NOUN
ajst-6855	97	28	.	.	PUNCT
ajst-6855	98	1	by	by	ADP
ajst-6855	98	2	considering	consider	VERB
ajst-6855	98	3	the	the	DET
ajst-6855	98	4	principles	principle	NOUN
ajst-6855	98	5	of	of	ADP
ajst-6855	98	6	zeta	zeta	PROPN
ajst-6855	98	7	potential	potential	NOUN
ajst-6855	98	8	,	,	PUNCT
ajst-6855	98	9	we	we	PRON
ajst-6855	98	10	analyzed	analyze	VERB
ajst-6855	98	11	the	the	DET
ajst-6855	98	12	charge	charge	NOUN
ajst-6855	98	13	status	status	NOUN
ajst-6855	98	14	of	of	ADP
ajst-6855	98	15	the	the	DET
ajst-6855	98	16	sic	sic	ADJ
ajst-6855	98	17	epitaxial	epitaxial	ADJ
ajst-6855	98	18	wafer	wafer	NOUN
ajst-6855	98	19	si	si	NOUN
ajst-6855	98	20	surface	surface	NOUN
ajst-6855	98	21	at	at	ADP
ajst-6855	98	22	different	different	ADJ
ajst-6855	98	23	ph	ph	ADJ
ajst-6855	98	24	values	value	NOUN
ajst-6855	98	25	and	and	CCONJ
ajst-6855	98	26	compared	compare	VERB
ajst-6855	98	27	it	it	PRON
ajst-6855	98	28	with	with	ADP
ajst-6855	98	29	the	the	DET
ajst-6855	98	30	zeta	zeta	PROPN
ajst-6855	98	31	potential	potential	NOUN
ajst-6855	98	32	of	of	ADP
ajst-6855	98	33	common	common	ADJ
ajst-6855	98	34	contaminants	contaminant	NOUN
ajst-6855	98	35	.	.	PUNCT
ajst-6855	99	1	the	the	DET
ajst-6855	99	2	results	result	NOUN
ajst-6855	99	3	revealed	reveal	VERB
ajst-6855	99	4	that	that	SCONJ
ajst-6855	99	5	zeta	zeta	PROPN
ajst-6855	99	6	potential	potential	NOUN
ajst-6855	99	7	plays	play	VERB
ajst-6855	99	8	a	a	DET
ajst-6855	99	9	crucial	crucial	ADJ
ajst-6855	99	10	role	role	NOUN
ajst-6855	99	11	in	in	ADP
ajst-6855	99	12	the	the	DET
ajst-6855	99	13	mechanism	mechanism	NOUN
ajst-6855	99	14	of	of	ADP
ajst-6855	99	15	particle	particle	NOUN
ajst-6855	99	16	adsorption	adsorption	NOUN
ajst-6855	99	17	on	on	ADP
ajst-6855	99	18	epitaxial	epitaxial	ADJ
ajst-6855	99	19	wafers	wafer	NOUN
ajst-6855	99	20	.	.	PUNCT
ajst-6855	100	1	based	base	VERB
ajst-6855	100	2	on	on	ADP
ajst-6855	100	3	these	these	DET
ajst-6855	100	4	findings	finding	NOUN
ajst-6855	100	5	,	,	PUNCT
ajst-6855	100	6	we	we	PRON
ajst-6855	100	7	optimized	optimize	VERB
ajst-6855	100	8	the	the	DET
ajst-6855	100	9	sic	sic	ADJ
ajst-6855	100	10	cleaning	cleaning	NOUN
ajst-6855	100	11	process	process	NOUN
ajst-6855	100	12	and	and	CCONJ
ajst-6855	100	13	conducted	conduct	VERB
ajst-6855	100	14	experiments	experiment	NOUN
ajst-6855	100	15	to	to	PART
ajst-6855	100	16	validate	validate	VERB
ajst-6855	100	17	its	its	PRON
ajst-6855	100	18	efficacy	efficacy	NOUN
ajst-6855	100	19	.	.	PUNCT
ajst-6855	101	1	the	the	DET
ajst-6855	101	2	results	result	NOUN
ajst-6855	101	3	of	of	ADP
ajst-6855	101	4	the	the	DET
ajst-6855	101	5	experiments	experiment	NOUN
ajst-6855	101	6	demonstrated	demonstrate	VERB
ajst-6855	101	7	that	that	SCONJ
ajst-6855	101	8	the	the	DET
ajst-6855	101	9	sc2	sc2	NOUN
ajst-6855	101	10	cleaning	cleaning	NOUN
ajst-6855	101	11	process	process	NOUN
ajst-6855	101	12	is	be	AUX
ajst-6855	101	13	not	not	PART
ajst-6855	101	14	conducive	conducive	ADJ
ajst-6855	101	15	to	to	ADP
ajst-6855	101	16	the	the	DET
ajst-6855	101	17	removal	removal	NOUN
ajst-6855	101	18	of	of	ADP
ajst-6855	101	19	contamination	contamination	NOUN
ajst-6855	101	20	particles	particle	NOUN
ajst-6855	101	21	on	on	ADP
ajst-6855	101	22	the	the	DET
ajst-6855	101	23	si	si	PROPN
ajst-6855	101	24	surface	surface	NOUN
ajst-6855	101	25	,	,	PUNCT
ajst-6855	101	26	while	while	SCONJ
ajst-6855	101	27	the	the	DET
ajst-6855	101	28	sc1	sc1	NOUN
ajst-6855	101	29	cleaning	cleaning	NOUN
ajst-6855	101	30	process	process	NOUN
ajst-6855	101	31	can	can	AUX
ajst-6855	101	32	effectively	effectively	ADV
ajst-6855	101	33	remove	remove	VERB
ajst-6855	101	34	surface	surface	NOUN
ajst-6855	101	35	particles	particle	NOUN
ajst-6855	101	36	on	on	ADP
ajst-6855	101	37	the	the	DET
ajst-6855	101	38	epitaxial	epitaxial	ADJ
ajst-6855	101	39	wafer	wafer	NOUN
ajst-6855	101	40	and	and	CCONJ
ajst-6855	101	41	is	be	AUX
ajst-6855	101	42	not	not	PART
ajst-6855	101	43	affected	affect	VERB
ajst-6855	101	44	by	by	ADP
ajst-6855	101	45	other	other	ADJ
ajst-6855	101	46	processes	process	NOUN
ajst-6855	101	47	.	.	PUNCT
ajst-6855	102	1	therefore	therefore	ADV
ajst-6855	102	2	,	,	PUNCT
ajst-6855	102	3	in	in	ADP
ajst-6855	102	4	practical	practical	ADJ
ajst-6855	102	5	industrial	industrial	ADJ
ajst-6855	102	6	production	production	NOUN
ajst-6855	102	7	,	,	PUNCT
ajst-6855	102	8	the	the	DET
ajst-6855	102	9	adoption	adoption	NOUN
ajst-6855	102	10	of	of	ADP
ajst-6855	102	11	the	the	DET
ajst-6855	102	12	spm	spm	PROPN
ajst-6855	102	13	-	-	ADJ
ajst-6855	102	14	sc2	sc2	ADJ
ajst-6855	102	15	-	-	PUNCT
ajst-6855	102	16	sc1	sc1	NOUN
ajst-6855	102	17	sequence	sequence	NOUN
ajst-6855	102	18	cleaning	cleaning	NOUN
ajst-6855	102	19	process	process	NOUN
ajst-6855	102	20	is	be	AUX
ajst-6855	102	21	beneficial	beneficial	ADJ
ajst-6855	102	22	for	for	ADP
ajst-6855	102	23	removing	remove	VERB
ajst-6855	102	24	contamination	contamination	NOUN
ajst-6855	102	25	particles	particle	NOUN
ajst-6855	102	26	on	on	ADP
ajst-6855	102	27	the	the	DET
ajst-6855	102	28	sic	sic	ADJ
ajst-6855	102	29	epitaxial	epitaxial	ADJ
ajst-6855	102	30	wafer	wafer	NOUN
ajst-6855	102	31	si	si	NOUN
ajst-6855	102	32	surface	surface	NOUN
ajst-6855	102	33	.	.	PUNCT
ajst-6855	103	1	if	if	SCONJ
ajst-6855	103	2	there	there	PRON
ajst-6855	103	3	is	be	VERB
ajst-6855	103	4	no	no	DET
ajst-6855	103	5	metal	metal	NOUN
ajst-6855	103	6	ion	ion	NOUN
ajst-6855	103	7	contamination	contamination	NOUN
ajst-6855	103	8	on	on	ADP
ajst-6855	103	9	the	the	DET
ajst-6855	103	10	surface	surface	NOUN
ajst-6855	103	11	of	of	ADP
ajst-6855	103	12	the	the	DET
ajst-6855	103	13	epitaxial	epitaxial	ADJ
ajst-6855	103	14	wafer	wafer	NOUN
ajst-6855	103	15	,	,	PUNCT
ajst-6855	103	16	the	the	DET
ajst-6855	103	17	sc2	sc2	NOUN
ajst-6855	103	18	cleaning	cleaning	NOUN
ajst-6855	103	19	process	process	NOUN
ajst-6855	103	20	can	can	AUX
ajst-6855	103	21	be	be	AUX
ajst-6855	103	22	omitted	omit	VERB
ajst-6855	103	23	,	,	PUNCT
ajst-6855	103	24	which	which	PRON
ajst-6855	103	25	would	would	AUX
ajst-6855	103	26	reduce	reduce	VERB
ajst-6855	103	27	working	working	NOUN
ajst-6855	103	28	time	time	NOUN
ajst-6855	103	29	,	,	PUNCT
ajst-6855	103	30	chemical	chemical	ADJ
ajst-6855	103	31	reagent	reagent	ADJ
ajst-6855	103	32	usage	usage	NOUN
ajst-6855	103	33	,	,	PUNCT
ajst-6855	103	34	and	and	CCONJ
ajst-6855	103	35	the	the	DET
ajst-6855	103	36	discharge	discharge	NOUN
ajst-6855	103	37	of	of	ADP
ajst-6855	103	38	cleaning	clean	VERB
ajst-6855	103	39	wastewater	wastewater	NOUN
ajst-6855	103	40	.	.	PUNCT
ajst-6855	104	1	acknowledgment	acknowledgment	NOUN
ajst-6855	104	2	this	this	DET
ajst-6855	104	3	work	work	NOUN
ajst-6855	104	4	was	be	AUX
ajst-6855	104	5	supported	support	VERB
ajst-6855	104	6	by	by	ADP
ajst-6855	104	7	the	the	DET
ajst-6855	104	8	provincial	provincial	ADJ
ajst-6855	104	9	natural	natural	ADJ
ajst-6855	104	10	seience	seience	NOUN
ajst-6855	104	11	foundation	foundation	NOUN
ajst-6855	104	12	of	of	ADP
ajst-6855	104	13	guangdong(grant	guangdong(grant	ADJ
ajst-6855	104	14	no.2022a1515012628	no.2022a1515012628	NOUN
ajst-6855	104	15	)	)	PUNCT
ajst-6855	104	16	.	.	PUNCT
ajst-6855	105	1	references	reference	NOUN
ajst-6855	105	2	[	[	X
ajst-6855	105	3	1	1	X
ajst-6855	105	4	]	]	X
ajst-6855	105	5	liang	liang	PROPN
ajst-6855	105	6	z	z	PROPN
ajst-6855	105	7	,	,	PUNCT
ajst-6855	105	8	ning	ne	VERB
ajst-6855	105	9	p	p	X
ajst-6855	105	10	,	,	PUNCT
ajst-6855	105	11	wang	wang	PROPN
ajst-6855	105	12	f.	f.	PROPN
ajst-6855	105	13	development	development	PROPN
ajst-6855	105	14	of	of	ADP
ajst-6855	105	15	advanced	advanced	ADJ
ajst-6855	105	16	allsic	allsic	ADJ
ajst-6855	105	17	power	power	NOUN
ajst-6855	105	18	modules	module	NOUN
ajst-6855	105	19	[	[	X
ajst-6855	105	20	j	j	X
ajst-6855	105	21	]	]	X
ajst-6855	105	22	.	.	PUNCT
ajst-6855	106	1	ieee	ieee	NOUN
ajst-6855	106	2	transactions	transaction	NOUN
ajst-6855	106	3	on	on	ADP
ajst-6855	106	4	power	power	NOUN
ajst-6855	106	5	electronics	electronic	NOUN
ajst-6855	106	6	,	,	PUNCT
ajst-6855	106	7	2014	2014	NUM
ajst-6855	106	8	,	,	PUNCT
ajst-6855	106	9	29(5	29(5	NUM
ajst-6855	106	10	):	):	PUNCT
ajst-6855	106	11	2289	2289	NUM
ajst-6855	106	12	-	-	SYM
ajst-6855	106	13	95	95	NUM
ajst-6855	106	14	.	.	PUNCT
ajst-6855	107	1	[	[	X
ajst-6855	107	2	2	2	NUM
ajst-6855	107	3	]	]	X
ajst-6855	107	4	deng	deng	PROPN
ajst-6855	107	5	h	h	PROPN
ajst-6855	107	6	,	,	PUNCT
ajst-6855	107	7	endo	endo	PROPN
ajst-6855	107	8	k	k	NOUN
ajst-6855	107	9	,	,	PUNCT
ajst-6855	107	10	yamamura	yamamura	PROPN
ajst-6855	107	11	k.	k.	PROPN
ajst-6855	107	12	competition	competition	NOUN
ajst-6855	107	13	between	between	ADP
ajst-6855	107	14	surface	surface	NOUN
ajst-6855	107	15	modification	modification	NOUN
ajst-6855	107	16	and	and	CCONJ
ajst-6855	107	17	abrasive	abrasive	ADJ
ajst-6855	107	18	polishing	polishing	NOUN
ajst-6855	107	19	:	:	PUNCT
ajst-6855	107	20	a	a	DET
ajst-6855	107	21	method	method	NOUN
ajst-6855	107	22	of	of	ADP
ajst-6855	107	23	controlling	control	VERB
ajst-6855	107	24	the	the	DET
ajst-6855	107	25	surface	surface	NOUN
ajst-6855	107	26	atomic	atomic	ADJ
ajst-6855	107	27	structure	structure	NOUN
ajst-6855	107	28	of	of	ADP
ajst-6855	107	29	4h	4h	NOUN
ajst-6855	107	30	-	-	PUNCT
ajst-6855	107	31	sic	sic	ADJ
ajst-6855	107	32	(	(	PUNCT
ajst-6855	107	33	0001	0001	NUM
ajst-6855	107	34	)	)	PUNCT
ajst-6855	108	1	[	[	X
ajst-6855	108	2	j	j	X
ajst-6855	108	3	]	]	X
ajst-6855	108	4	.	.	PUNCT
ajst-6855	109	1	sci	sci	PROPN
ajst-6855	109	2	rep	rep	PROPN
ajst-6855	109	3	,	,	PUNCT
ajst-6855	109	4	2015	2015	NUM
ajst-6855	109	5	,	,	PUNCT
ajst-6855	109	6	5	5	NUM
ajst-6855	109	7	:	:	SYM
ajst-6855	109	8	8947	8947	NUM
ajst-6855	109	9	.	.	PUNCT
ajst-6855	110	1	[	[	X
ajst-6855	110	2	3	3	NUM
ajst-6855	110	3	]	]	X
ajst-6855	110	4	baierhofer	baierhofer	NOUN
ajst-6855	110	5	d	d	PROPN
ajst-6855	110	6	,	,	PUNCT
ajst-6855	110	7	thomas	thomas	PROPN
ajst-6855	110	8	b	b	PROPN
ajst-6855	110	9	,	,	PUNCT
ajst-6855	110	10	staiger	staiger	NOUN
ajst-6855	110	11	f	f	NOUN
ajst-6855	110	12	,	,	PUNCT
ajst-6855	110	13	et	et	PROPN
ajst-6855	110	14	al	al	PROPN
ajst-6855	110	15	.	.	PUNCT
ajst-6855	110	16	defect	defect	ADJ
ajst-6855	110	17	reduction	reduction	NOUN
ajst-6855	110	18	in	in	ADP
ajst-6855	110	19	sic	sic	ADJ
ajst-6855	110	20	epilayers	epilayer	NOUN
ajst-6855	110	21	by	by	ADP
ajst-6855	110	22	different	different	ADJ
ajst-6855	110	23	substrate	substrate	NOUN
ajst-6855	110	24	cleaning	cleaning	NOUN
ajst-6855	110	25	methods	method	NOUN
ajst-6855	110	26	[	[	X
ajst-6855	110	27	j	j	X
ajst-6855	110	28	]	]	X
ajst-6855	110	29	.	.	PUNCT
ajst-6855	111	1	materials	material	NOUN
ajst-6855	111	2	science	science	NOUN
ajst-6855	111	3	in	in	ADP
ajst-6855	111	4	semiconductor	semiconductor	NOUN
ajst-6855	111	5	processing	processing	NOUN
ajst-6855	111	6	,	,	PUNCT
ajst-6855	111	7	2022	2022	NUM
ajst-6855	111	8	,	,	PUNCT
ajst-6855	111	9	140	140	NUM
ajst-6855	111	10	:	:	SYM
ajst-6855	111	11	106414	106414	NUM
ajst-6855	111	12	.	.	PUNCT
ajst-6855	112	1	[	[	X
ajst-6855	112	2	4	4	X
ajst-6855	112	3	]	]	X
ajst-6855	112	4	kwietniewski	kwietniewski	PROPN
ajst-6855	112	5	n	n	CCONJ
ajst-6855	112	6	,	,	PUNCT
ajst-6855	112	7	sochacki	sochacki	PROPN
ajst-6855	112	8	m	m	PROPN
ajst-6855	112	9	,	,	PUNCT
ajst-6855	112	10	szmidt	szmidt	PROPN
ajst-6855	112	11	j	j	PROPN
ajst-6855	112	12	,	,	PUNCT
ajst-6855	112	13	et	et	PROPN
ajst-6855	112	14	al	al	PROPN
ajst-6855	112	15	.	.	PUNCT
ajst-6855	112	16	influence	influence	NOUN
ajst-6855	112	17	of	of	ADP
ajst-6855	112	18	surface	surface	NOUN
ajst-6855	112	19	cleaning	cleaning	NOUN
ajst-6855	112	20	effects	effect	NOUN
ajst-6855	112	21	on	on	ADP
ajst-6855	112	22	properties	property	NOUN
ajst-6855	112	23	of	of	ADP
ajst-6855	112	24	schottky	schottky	NOUN
ajst-6855	112	25	diodes	diode	NOUN
ajst-6855	112	26	on	on	ADP
ajst-6855	112	27	4h	4h	NUM
ajst-6855	112	28	–	–	PUNCT
ajst-6855	112	29	sic	sic	ADJ
ajst-6855	113	1	[	[	X
ajst-6855	113	2	j	j	X
ajst-6855	113	3	]	]	X
ajst-6855	113	4	.	.	PUNCT
ajst-6855	114	1	applied	apply	VERB
ajst-6855	114	2	surface	surface	NOUN
ajst-6855	114	3	science	science	NOUN
ajst-6855	114	4	,	,	PUNCT
ajst-6855	114	5	2008	2008	NUM
ajst-6855	114	6	,	,	PUNCT
ajst-6855	114	7	254(24	254(24	NUM
ajst-6855	114	8	):	):	PUNCT
ajst-6855	114	9	8106	8106	NUM
ajst-6855	114	10	-	-	SYM
ajst-6855	114	11	10	10	NUM
ajst-6855	114	12	.	.	PUNCT
ajst-6855	114	13	162	162	NUM
ajst-6855	115	1	[	[	X
ajst-6855	115	2	5	5	NUM
ajst-6855	115	3	]	]	X
ajst-6855	115	4	zhao	zhao	PROPN
ajst-6855	115	5	l	l	PROPN
ajst-6855	115	6	,	,	PUNCT
ajst-6855	115	7	shang	shang	PROPN
ajst-6855	115	8	h	h	PROPN
ajst-6855	115	9	,	,	PUNCT
ajst-6855	115	10	wang	wang	PROPN
ajst-6855	115	11	d	d	PROPN
ajst-6855	115	12	,	,	PUNCT
ajst-6855	115	13	et	et	PROPN
ajst-6855	115	14	al	al	PROPN
ajst-6855	115	15	.	.	PROPN
ajst-6855	115	16	surface	surface	NOUN
ajst-6855	115	17	cleaning	cleaning	NOUN
ajst-6855	115	18	process	process	NOUN
ajst-6855	115	19	for	for	ADP
ajst-6855	115	20	plasma	plasma	NOUN
ajst-6855	115	21	-	-	PUNCT
ajst-6855	115	22	etched	etch	VERB
ajst-6855	115	23	sic	sic	ADJ
ajst-6855	115	24	wafer	wafer	NOUN
ajst-6855	116	1	[	[	X
ajst-6855	116	2	j	j	X
ajst-6855	116	3	]	]	X
ajst-6855	116	4	.	.	PUNCT
ajst-6855	117	1	applied	apply	VERB
ajst-6855	117	2	physics	physics	PROPN
ajst-6855	117	3	a	a	PRON
ajst-6855	117	4	,	,	PUNCT
ajst-6855	117	5	2020	2020	NUM
ajst-6855	117	6	,	,	PUNCT
ajst-6855	117	7	126(8	126(8	NUM
ajst-6855	117	8	)	)	PUNCT
ajst-6855	117	9	.	.	PUNCT
ajst-6855	118	1	[	[	X
ajst-6855	118	2	6	6	NUM
ajst-6855	118	3	]	]	X
ajst-6855	118	4	guan	guan	PROPN
ajst-6855	118	5	z	z	PROPN
ajst-6855	118	6	p	p	PROPN
ajst-6855	118	7	,	,	PUNCT
ajst-6855	118	8	cai	cai	X
ajst-6855	118	9	a	a	DET
ajst-6855	118	10	l	l	NOUN
ajst-6855	118	11	,	,	PUNCT
ajst-6855	118	12	porter	porter	NOUN
ajst-6855	118	13	h	h	NOUN
ajst-6855	118	14	,	,	PUNCT
ajst-6855	118	15	et	et	PROPN
ajst-6855	118	16	al	al	PROPN
ajst-6855	118	17	.	.	PROPN
ajst-6855	118	18	gan	gan	PROPN
ajst-6855	118	19	grown	grow	VERB
ajst-6855	118	20	on	on	ADP
ajst-6855	118	21	twostep	twostep	NOUN
ajst-6855	118	22	cleaned	clean	VERB
ajst-6855	118	23	c	c	NOUN
ajst-6855	118	24	-	-	PUNCT
ajst-6855	118	25	terminated	terminate	VERB
ajst-6855	118	26	6h	6h	NOUN
ajst-6855	118	27	–	–	PUNCT
ajst-6855	118	28	sic	sic	ADJ
ajst-6855	118	29	by	by	ADP
ajst-6855	118	30	molecular	molecular	ADJ
ajst-6855	118	31	-	-	PUNCT
ajst-6855	118	32	beam	beam	NOUN
ajst-6855	118	33	epitaxy	epitaxy	NOUN
ajst-6855	119	1	[	[	X
ajst-6855	119	2	j	j	X
ajst-6855	119	3	]	]	X
ajst-6855	119	4	.	.	PUNCT
ajst-6855	120	1	journal	journal	PROPN
ajst-6855	120	2	of	of	ADP
ajst-6855	120	3	vacuum	vacuum	PROPN
ajst-6855	120	4	science	science	PROPN
ajst-6855	120	5	&	&	CCONJ
ajst-6855	120	6	technology	technology	PROPN
ajst-6855	120	7	a	a	DET
ajst-6855	120	8	:	:	PUNCT
ajst-6855	120	9	vacuum	vacuum	NOUN
ajst-6855	120	10	,	,	PUNCT
ajst-6855	120	11	surfaces	surface	NOUN
ajst-6855	120	12	,	,	PUNCT
ajst-6855	120	13	and	and	CCONJ
ajst-6855	120	14	films	film	NOUN
ajst-6855	120	15	,	,	PUNCT
ajst-6855	120	16	2001	2001	NUM
ajst-6855	120	17	,	,	PUNCT
ajst-6855	120	18	19(1	19(1	NUM
ajst-6855	120	19	):	):	PUNCT
ajst-6855	120	20	280	280	NUM
ajst-6855	120	21	-	-	SYM
ajst-6855	120	22	6	6	NUM
ajst-6855	120	23	.	.	PUNCT
ajst-6855	121	1	[	[	X
ajst-6855	121	2	7	7	X
ajst-6855	121	3	]	]	X
ajst-6855	121	4	huang	huang	PROPN
ajst-6855	121	5	l	l	PROPN
ajst-6855	121	6	,	,	PUNCT
ajst-6855	121	7	zhu	zhu	PROPN
ajst-6855	121	8	q	q	X
ajst-6855	121	9	,	,	PUNCT
ajst-6855	121	10	gao	gao	PROPN
ajst-6855	121	11	m	m	PROPN
ajst-6855	121	12	,	,	PUNCT
ajst-6855	121	13	et	et	PROPN
ajst-6855	121	14	al	al	PROPN
ajst-6855	121	15	.	.	PUNCT
ajst-6855	121	16	cleaning	clean	VERB
ajst-6855	121	17	of	of	ADP
ajst-6855	121	18	sic	sic	ADJ
ajst-6855	121	19	surfaces	surface	NOUN
ajst-6855	121	20	by	by	ADP
ajst-6855	121	21	low	low	ADJ
ajst-6855	121	22	temperature	temperature	NOUN
ajst-6855	121	23	ecr	ecr	PROPN
ajst-6855	121	24	microwave	microwave	NOUN
ajst-6855	121	25	hydrogen	hydrogen	NOUN
ajst-6855	121	26	plasma	plasma	NOUN
ajst-6855	122	1	[	[	X
ajst-6855	122	2	j	j	X
ajst-6855	122	3	]	]	X
ajst-6855	122	4	.	.	PUNCT
ajst-6855	123	1	applied	apply	VERB
ajst-6855	123	2	surface	surface	NOUN
ajst-6855	123	3	science	science	NOUN
ajst-6855	123	4	,	,	PUNCT
ajst-6855	123	5	2011	2011	NUM
ajst-6855	123	6	,	,	PUNCT
ajst-6855	123	7	257(23	257(23	NOUN
ajst-6855	123	8	):	):	PUNCT
ajst-6855	123	9	10172	10172	NUM
ajst-6855	123	10	-	-	SYM
ajst-6855	123	11	6	6	NUM
ajst-6855	123	12	.	.	PUNCT
ajst-6855	124	1	[	[	X
ajst-6855	124	2	8	8	NUM
ajst-6855	124	3	]	]	X
ajst-6855	124	4	losurdo	losurdo	NOUN
ajst-6855	124	5	m	m	PROPN
ajst-6855	124	6	,	,	PUNCT
ajst-6855	124	7	bruno	bruno	PROPN
ajst-6855	124	8	g	g	PROPN
ajst-6855	124	9	,	,	PUNCT
ajst-6855	124	10	brown	brown	ADJ
ajst-6855	124	11	a	a	PRON
ajst-6855	124	12	,	,	PUNCT
ajst-6855	124	13	et	et	PROPN
ajst-6855	124	14	al	al	PROPN
ajst-6855	124	15	.	.	PROPN
ajst-6855	124	16	study	study	NOUN
ajst-6855	124	17	of	of	ADP
ajst-6855	124	18	the	the	DET
ajst-6855	124	19	temperature	temperature	NOUN
ajst-6855	124	20	-	-	PUNCT
ajst-6855	124	21	dependent	dependent	ADJ
ajst-6855	124	22	interaction	interaction	NOUN
ajst-6855	124	23	of	of	ADP
ajst-6855	124	24	4h	4h	NUM
ajst-6855	124	25	–	–	PUNCT
ajst-6855	124	26	sic	sic	ADJ
ajst-6855	124	27	and	and	CCONJ
ajst-6855	124	28	6h	6h	NUM
ajst-6855	124	29	–	–	PUNCT
ajst-6855	124	30	sic	sic	ADJ
ajst-6855	124	31	surfaces	surface	NOUN
ajst-6855	124	32	with	with	ADP
ajst-6855	124	33	atomic	atomic	ADJ
ajst-6855	124	34	hydrogen	hydrogen	NOUN
ajst-6855	125	1	[	[	X
ajst-6855	125	2	j	j	X
ajst-6855	125	3	]	]	X
ajst-6855	125	4	.	.	PUNCT
ajst-6855	126	1	applied	apply	VERB
ajst-6855	126	2	physics	physics	NOUN
ajst-6855	126	3	letters	letter	NOUN
ajst-6855	126	4	,	,	PUNCT
ajst-6855	126	5	2004	2004	NUM
ajst-6855	126	6	,	,	PUNCT
ajst-6855	126	7	84(20	84(20	NUM
ajst-6855	126	8	):	):	PUNCT
ajst-6855	126	9	4011	4011	NUM
ajst-6855	126	10	-	-	SYM
ajst-6855	126	11	3	3	NUM
ajst-6855	126	12	.	.	PUNCT
ajst-6855	127	1	[	[	X
ajst-6855	127	2	9	9	NUM
ajst-6855	127	3	]	]	X
ajst-6855	127	4	madani	madani	PROPN
ajst-6855	127	5	m	m	PROPN
ajst-6855	127	6	,	,	PUNCT
ajst-6855	127	7	liu	liu	PROPN
ajst-6855	127	8	y	y	PROPN
ajst-6855	127	9	-	-	PUNCT
ajst-6855	127	10	l	l	PROPN
ajst-6855	127	11	,	,	PUNCT
ajst-6855	127	12	takahashi	takahashi	PROPN
ajst-6855	127	13	m	m	PROPN
ajst-6855	127	14	,	,	PUNCT
ajst-6855	127	15	et	et	PROPN
ajst-6855	127	16	al	al	PROPN
ajst-6855	127	17	.	.	PROPN
ajst-6855	127	18	sic	sic	ADJ
ajst-6855	127	19	cleaning	cleaning	NOUN
ajst-6855	127	20	method	method	NOUN
ajst-6855	127	21	by	by	ADP
ajst-6855	127	22	use	use	NOUN
ajst-6855	127	23	of	of	ADP
ajst-6855	127	24	dilute	dilute	PROPN
ajst-6855	127	25	hcn	hcn	PROPN
ajst-6855	127	26	aqueous	aqueous	ADJ
ajst-6855	127	27	solutions	solution	NOUN
ajst-6855	128	1	[	[	X
ajst-6855	128	2	j	j	X
ajst-6855	128	3	]	]	X
ajst-6855	128	4	.	.	PUNCT
ajst-6855	129	1	journal	journal	PROPN
ajst-6855	129	2	of	of	ADP
ajst-6855	129	3	the	the	DET
ajst-6855	129	4	electrochemical	electrochemical	ADJ
ajst-6855	129	5	society	society	NOUN
ajst-6855	129	6	,	,	PUNCT
ajst-6855	129	7	2008	2008	NUM
ajst-6855	129	8	,	,	PUNCT
ajst-6855	129	9	155(11	155(11	NUM
ajst-6855	129	10	)	)	PUNCT
ajst-6855	129	11	.	.	PUNCT
ajst-6855	130	1	[	[	X
ajst-6855	130	2	10	10	NUM
ajst-6855	130	3	]	]	X
ajst-6855	130	4	reinhardt	reinhardt	PROPN
ajst-6855	130	5	k	k	PROPN
ajst-6855	130	6	,	,	PUNCT
ajst-6855	130	7	kern	kern	PROPN
ajst-6855	130	8	w.	w.	PROPN
ajst-6855	130	9	handbook	handbook	PROPN
ajst-6855	130	10	of	of	ADP
ajst-6855	130	11	silicon	silicon	NOUN
ajst-6855	130	12	wafer	wafer	NOUN
ajst-6855	130	13	cleaning	clean	VERB
ajst-6855	130	14	technology	technology	NOUN
ajst-6855	131	1	[	[	X
ajst-6855	132	1	m	m	X
ajst-6855	132	2	]	]	X
ajst-6855	132	3	.	.	PUNCT
ajst-6855	133	1	william	william	PROPN
ajst-6855	133	2	andrew	andrew	PROPN
ajst-6855	133	3	,	,	PUNCT
ajst-6855	133	4	2018	2018	NUM
ajst-6855	133	5	.	.	PUNCT
ajst-6855	134	1	[	[	X
ajst-6855	134	2	11	11	NUM
ajst-6855	134	3	]	]	X
ajst-6855	134	4	sun	sun	PROPN
ajst-6855	134	5	t	t	PROPN
ajst-6855	134	6	,	,	PUNCT
ajst-6855	134	7	wu	wu	PROPN
ajst-6855	134	8	z	z	PROPN
ajst-6855	134	9	,	,	PUNCT
ajst-6855	134	10	zhuo	zhuo	PROPN
ajst-6855	134	11	q	q	PROPN
ajst-6855	134	12	,	,	PUNCT
ajst-6855	134	13	et	et	PROPN
ajst-6855	134	14	al	al	PROPN
ajst-6855	134	15	.	.	PROPN
ajst-6855	135	1	microstructure	microstructure	ADJ
ajst-6855	135	2	and	and	CCONJ
ajst-6855	135	3	mechanical	mechanical	ADJ
ajst-6855	135	4	properties	property	NOUN
ajst-6855	135	5	of	of	ADP
ajst-6855	135	6	aminated	aminated	ADJ
ajst-6855	135	7	polystyrene	polystyrene	NOUN
ajst-6855	135	8	spheres	sphere	NOUN
ajst-6855	135	9	/	/	SYM
ajst-6855	135	10	epoxy	epoxy	NOUN
ajst-6855	135	11	polymer	polymer	NOUN
ajst-6855	135	12	blends	blend	NOUN
ajst-6855	136	1	[	[	X
ajst-6855	136	2	j	j	X
ajst-6855	136	3	]	]	X
ajst-6855	136	4	.	.	PUNCT
ajst-6855	137	1	composites	composite	NOUN
ajst-6855	137	2	part	part	VERB
ajst-6855	137	3	a	a	DET
ajst-6855	137	4	:	:	PUNCT
ajst-6855	137	5	applied	apply	VERB
ajst-6855	137	6	science	science	NOUN
ajst-6855	137	7	and	and	CCONJ
ajst-6855	137	8	manufacturing	manufacturing	NOUN
ajst-6855	137	9	,	,	PUNCT
ajst-6855	137	10	2014	2014	NUM
ajst-6855	137	11	,	,	PUNCT
ajst-6855	137	12	66	66	NUM
ajst-6855	137	13	:	:	PUNCT
ajst-6855	137	14	58	58	NUM
ajst-6855	137	15	-	-	SYM
ajst-6855	137	16	64	64	NUM
ajst-6855	137	17	.	.	PUNCT
ajst-6855	138	1	[	[	X
ajst-6855	138	2	12	12	NUM
ajst-6855	138	3	]	]	X
ajst-6855	138	4	zhong	zhong	PROPN
ajst-6855	138	5	w	w	PROPN
ajst-6855	138	6	w	w	PROPN
ajst-6855	138	7	,	,	PUNCT
ajst-6855	138	8	huang	huang	PROPN
ajst-6855	138	9	y	y	PROPN
ajst-6855	138	10	f	f	PROPN
ajst-6855	138	11	,	,	PUNCT
ajst-6855	138	12	gan	gan	PROPN
ajst-6855	138	13	d	d	PROPN
ajst-6855	138	14	,	,	PUNCT
ajst-6855	138	15	et	et	PROPN
ajst-6855	138	16	al	al	PROPN
ajst-6855	138	17	.	.	PUNCT
ajst-6855	139	1	wetting	wet	VERB
ajst-6855	139	2	behavior	behavior	NOUN
ajst-6855	139	3	of	of	ADP
ajst-6855	139	4	water	water	NOUN
ajst-6855	139	5	on	on	ADP
ajst-6855	139	6	silicon	silicon	NOUN
ajst-6855	139	7	carbide	carbide	NOUN
ajst-6855	139	8	polar	polar	ADJ
ajst-6855	139	9	surfaces	surface	NOUN
ajst-6855	140	1	[	[	X
ajst-6855	140	2	j	j	X
ajst-6855	140	3	]	]	X
ajst-6855	140	4	.	.	PUNCT
ajst-6855	141	1	phys	phy	NOUN
ajst-6855	141	2	chem	chem	NOUN
ajst-6855	141	3	chem	chem	NOUN
ajst-6855	141	4	phys	phy	NOUN
ajst-6855	141	5	,	,	PUNCT
ajst-6855	141	6	2016	2016	NUM
ajst-6855	141	7	,	,	PUNCT
ajst-6855	141	8	18(40	18(40	NUM
ajst-6855	141	9	):	):	PUNCT
ajst-6855	141	10	28033	28033	NUM
ajst-6855	141	11	-	-	SYM
ajst-6855	141	12	9	9	NUM
ajst-6855	141	13	.	.	PUNCT
ajst-6855	142	1	[	[	X
ajst-6855	142	2	13	13	NUM
ajst-6855	142	3	]	]	X
ajst-6855	142	4	neslen	neslen	PROPN
ajst-6855	142	5	c	c	PROPN
ajst-6855	142	6	,	,	PUNCT
ajst-6855	142	7	mitchel	mitchel	PROPN
ajst-6855	142	8	w	w	PROPN
ajst-6855	142	9	,	,	PUNCT
ajst-6855	142	10	hengehold	hengehold	PROPN
ajst-6855	142	11	r.	r.	PROPN
ajst-6855	142	12	effects	effect	NOUN
ajst-6855	142	13	of	of	ADP
ajst-6855	142	14	process	process	NOUN
ajst-6855	142	15	parameter	parameter	NOUN
ajst-6855	142	16	variations	variation	NOUN
ajst-6855	142	17	on	on	ADP
ajst-6855	142	18	the	the	DET
ajst-6855	142	19	removal	removal	NOUN
ajst-6855	142	20	rate	rate	NOUN
ajst-6855	142	21	in	in	ADP
ajst-6855	142	22	chemical	chemical	ADJ
ajst-6855	142	23	mechanical	mechanical	ADJ
ajst-6855	142	24	polishing	polishing	NOUN
ajst-6855	142	25	of	of	ADP
ajst-6855	142	26	4h	4h	NOUN
ajst-6855	142	27	-	-	PUNCT
ajst-6855	142	28	sic	sic	NOUN
ajst-6855	143	1	[	[	X
ajst-6855	143	2	j	j	X
ajst-6855	143	3	]	]	X
ajst-6855	143	4	.	.	PUNCT
ajst-6855	144	1	journal	journal	PROPN
ajst-6855	144	2	of	of	ADP
ajst-6855	144	3	electronic	electronic	ADJ
ajst-6855	144	4	materials	material	NOUN
ajst-6855	144	5	,	,	PUNCT
ajst-6855	144	6	2001	2001	NUM
ajst-6855	144	7	,	,	PUNCT
ajst-6855	144	8	30	30	NUM
ajst-6855	144	9	:	:	PUNCT
ajst-6855	144	10	1271	1271	NUM
ajst-6855	144	11	-	-	SYM
ajst-6855	144	12	5	5	NUM
ajst-6855	144	13	.	.	PUNCT
ajst-6855	145	1	[	[	X
ajst-6855	145	2	14	14	NUM
ajst-6855	145	3	]	]	X
ajst-6855	145	4	antonio	antonio	PROPN
ajst-6855	145	5	alves	alves	PROPN
ajst-6855	145	6	júnior	júnior	PROPN
ajst-6855	145	7	j	j	PROPN
ajst-6855	145	8	,	,	PUNCT
ajst-6855	145	9	baptista	baptista	PROPN
ajst-6855	145	10	baldo	baldo	PROPN
ajst-6855	145	11	j.	j.	PROPN
ajst-6855	145	12	the	the	DET
ajst-6855	145	13	behavior	behavior	NOUN
ajst-6855	145	14	of	of	ADP
ajst-6855	145	15	zeta	zeta	PROPN
ajst-6855	145	16	potential	potential	NOUN
ajst-6855	145	17	of	of	ADP
ajst-6855	145	18	silica	silica	NOUN
ajst-6855	145	19	suspensions	suspension	NOUN
ajst-6855	146	1	[	[	X
ajst-6855	146	2	j	j	X
ajst-6855	146	3	]	]	X
ajst-6855	146	4	.	.	PUNCT
ajst-6855	147	1	new	new	ADJ
ajst-6855	147	2	journal	journal	NOUN
ajst-6855	147	3	of	of	ADP
ajst-6855	147	4	glass	glass	NOUN
ajst-6855	147	5	and	and	CCONJ
ajst-6855	147	6	ceramics	ceramic	NOUN
ajst-6855	147	7	,	,	PUNCT
ajst-6855	147	8	2014	2014	NUM
ajst-6855	147	9	,	,	PUNCT
ajst-6855	147	10	04(02	04(02	NOUN
ajst-6855	147	11	):	):	PUNCT
ajst-6855	147	12	29	29	NUM
ajst-6855	147	13	-	-	SYM
ajst-6855	147	14	37	37	NUM
ajst-6855	147	15	.	.	PUNCT
ajst-6855	148	1	[	[	X
ajst-6855	148	2	15	15	NUM
ajst-6855	148	3	]	]	X
ajst-6855	148	4	choudhary	choudhary	PROPN
ajst-6855	148	5	r	r	PROPN
ajst-6855	148	6	,	,	PUNCT
ajst-6855	148	7	khurana	khurana	PROPN
ajst-6855	148	8	d	d	PROPN
ajst-6855	148	9	,	,	PUNCT
ajst-6855	148	10	kumar	kumar	PROPN
ajst-6855	148	11	a	a	PROPN
ajst-6855	148	12	,	,	PUNCT
ajst-6855	148	13	et	et	PROPN
ajst-6855	148	14	al	al	PROPN
ajst-6855	148	15	.	.	PROPN
ajst-6855	148	16	stability	stability	NOUN
ajst-6855	148	17	analysis	analysis	NOUN
ajst-6855	148	18	of	of	ADP
ajst-6855	148	19	al2o3	al2o3	NOUN
ajst-6855	148	20	/	/	SYM
ajst-6855	148	21	water	water	NOUN
ajst-6855	148	22	nanofluids	nanofluid	VERB
ajst-6855	149	1	[	[	X
ajst-6855	149	2	j	j	X
ajst-6855	149	3	]	]	X
ajst-6855	149	4	.	.	PUNCT
ajst-6855	150	1	journal	journal	PROPN
ajst-6855	150	2	of	of	ADP
ajst-6855	150	3	experimental	experimental	ADJ
ajst-6855	150	4	nanoscience	nanoscience	NOUN
ajst-6855	150	5	,	,	PUNCT
ajst-6855	150	6	2017	2017	NUM
ajst-6855	150	7	,	,	PUNCT
ajst-6855	150	8	12(1	12(1	NUM
ajst-6855	150	9	):	):	PUNCT
ajst-6855	150	10	140	140	NUM
ajst-6855	150	11	-	-	SYM
ajst-6855	150	12	51	51	NUM
ajst-6855	150	13	.	.	PUNCT
ajst-6855	151	1	[	[	X
ajst-6855	151	2	16	16	NUM
ajst-6855	151	3	]	]	X
ajst-6855	151	4	song	song	NOUN
ajst-6855	151	5	x	x	PROPN
ajst-6855	151	6	,	,	PUNCT
ajst-6855	151	7	jiang	jiang	PROPN
ajst-6855	151	8	n	n	PROPN
ajst-6855	151	9	,	,	PUNCT
ajst-6855	151	10	li	li	PROPN
ajst-6855	151	11	y	y	PROPN
ajst-6855	151	12	,	,	PUNCT
ajst-6855	151	13	et	et	PROPN
ajst-6855	151	14	al	al	PROPN
ajst-6855	151	15	.	.	PUNCT
ajst-6855	151	16	synthesis	synthesis	NOUN
ajst-6855	151	17	of	of	ADP
ajst-6855	151	18	ceo2	ceo2	NOUN
ajst-6855	151	19	-	-	PUNCT
ajst-6855	151	20	coated	coat	VERB
ajst-6855	151	21	sio2	sio2	NOUN
ajst-6855	151	22	nanoparticle	nanoparticle	NOUN
ajst-6855	151	23	and	and	CCONJ
ajst-6855	151	24	dispersion	dispersion	NOUN
ajst-6855	151	25	stability	stability	NOUN
ajst-6855	151	26	of	of	ADP
ajst-6855	151	27	its	its	PRON
ajst-6855	151	28	suspension	suspension	NOUN
ajst-6855	151	29	[	[	X
ajst-6855	151	30	j	j	X
ajst-6855	151	31	]	]	X
ajst-6855	151	32	.	.	PUNCT
ajst-6855	152	1	materials	material	NOUN
ajst-6855	152	2	chemistry	chemistry	NOUN
ajst-6855	152	3	and	and	CCONJ
ajst-6855	152	4	physics	physics	NOUN
ajst-6855	152	5	,	,	PUNCT
ajst-6855	152	6	2008	2008	NUM
ajst-6855	152	7	,	,	PUNCT
ajst-6855	152	8	110(1	110(1	NUM
ajst-6855	152	9	):	):	PUNCT
ajst-6855	152	10	128	128	NUM
ajst-6855	152	11	-	-	SYM
ajst-6855	152	12	35	35	NUM
ajst-6855	152	13	.	.	PUNCT