id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ap-1743	Golosov, Dmitriy A.; Zavatskiy, Sergey M.; Melnikov, Sergey N.	Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering	2013	5	.pdf	application/pdf	3395	177	64	In the present paper, the authors report the syn- thesis of YSZ thin films by RF magnetron sputtering and report the results of studying the structural and electrical properties of YSZ films. In order to form the crystalline structure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 ◦C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 ◦C. The electrophysical properties of YSZ films were investigated on structures such as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si.	cache/ap-1743.pdf	txt/ap-1743.txt