id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ap-1767	Píchal, Jan; Klenko, Julia	Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface	2013	5	.pdf	application/pdf	3175	200	61	We used the plasma enhanced chemical vapour deposition (PECVD) method applying atmospheric dielectric barrier discharge (ADBD) plasma for TiOx thin films deposition, employing titanium isopropoxide (TTIP) and oxygen as reactants, and argon as a working gas. The XPS peak positions were referenced at the aliphatic carbon component at 285.0 eV. Due to inadequate equipment we were unfortunately not able to clean the film profile by sput- tering and perform XPS profile tests, so our research had to focus on film surface tests only.	cache/ap-1767.pdf	txt/ap-1767.txt