id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ap-578	Horák, M.	Nanoelectronic Device Structures at Terahertz Frequency	2004	7	.pdf	application/pdf	5319	175	60	q p � � � � � � � � � � � 1 0 0 0 0 0 0 0 0 2 ac B �� ( ) cos( ) � � � � � � � sin( ) ( ) cos( ) sin( p x k p p x i p k q p 0 0 0 1 0 0 0 0 B B p x� � � � � � � � � � � � � � � 1 B) . (13) For a rectangular barrier we obtain f x e g x e p m E Uip x ip x( ) , ( ) , ( )max� � � ��0 0 0 2 � (3) where p0 is real for E U� max (this corresponds to the electron emission over the barrier) and p0 is imaginary, p i0 0� � for E U� max (electron tunneling through the barrier).	cache/ap-578.pdf	txt/ap-578.txt