id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ap-850	Salinger, J.	Measurement of Solar Cell Parameters with Dark Forward I-V Characteristics	2006	3	.pdf	application/pdf	2272	100	60	I A J e V R I kT A J e V R I DF S S � �� � �� � � � � � � � � 01 1 02 exp exp � �2 1 kT V R I R � � �� � � � � � � � � � S P , (1) where A stands for the area of the sample, J01 is diffusion current density, J02 is generation-recombination current den- sity, �1 and �2 are the diode factors, RS is the series resistance, RP is the shunt resistance, e is the electric charge, and k is the Bolzmann constant. The values of the shunt resistance at the highest tem- peratures were always lower than at room temperature (RT), but some differences were found: 26 © Czech Technical University Publishing House http://ctn.cvut.cz/ap/ Acta Polytechnica Vol. 46 No. 4/2006 P Fig: 1: Temperature dependence of shunt resistance RP of sam- ples #1942-02 (�), #20 (�) and LE2 (�) Fig.	cache/ap-850.pdf	txt/ap-850.txt