id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
ap-900	Prajzler, V.; Burian, Z.; Hüttel, I.; Špirková, J.; Hamáček, J.; Oswald, J.; Zavadil, J.; Peřina, V.	Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering	2006	7	.pdf	application/pdf	3657	159	57	GaN films grown using the Ga2O3 target at room tem- perature had an amorphous structure, while GaN films fabri- cated using the Ga target at room temperature had poly- crystalline structure (According to the literature, GaN layers fabricated at an elevated temperature (above 800 °C) can have a single crystalline structure For erbium and ytterbium doping into GaN layers, erbium metallic powder and ytterbium powder or Er2O3 and Yb2O3 pellets were laid on the top of the target.	cache/ap-900.pdf	txt/ap-900.txt