id	sid	tid	token	lemma	pos
ap-1725	1	1	acta	acta	PROPN
ap-1725	1	2	polytechnica	polytechnica	PROPN
ap-1725	1	3	acta	acta	PROPN
ap-1725	1	4	polytechnica	polytechnica	PROPN
ap-1725	1	5	53(2):113–116	53(2):113–116	PROPN
ap-1725	1	6	,	,	PUNCT
ap-1725	1	7	2013	2013	NUM
ap-1725	1	8	©	©	PROPN
ap-1725	1	9	czech	czech	PROPN
ap-1725	1	10	technical	technical	PROPN
ap-1725	1	11	university	university	PROPN
ap-1725	1	12	in	in	ADP
ap-1725	1	13	prague	prague	PROPN
ap-1725	1	14	,	,	PUNCT
ap-1725	1	15	2013	2013	NUM
ap-1725	1	16	available	available	ADJ
ap-1725	1	17	online	online	ADV
ap-1725	1	18	at	at	ADP
ap-1725	1	19	http://ctn.cvut.cz/ap/	http://ctn.cvut.cz/ap/	PROPN
ap-1725	1	20	the	the	DET
ap-1725	1	21	process	process	NOUN
ap-1725	1	22	of	of	ADP
ap-1725	1	23	plasma	plasma	NOUN
ap-1725	1	24	chemical	chemical	NOUN
ap-1725	1	25	photoresist	photoresist	NOUN
ap-1725	1	26	film	film	NOUN
ap-1725	1	27	ashing	ashing	NOUN
ap-1725	1	28	from	from	ADP
ap-1725	1	29	the	the	DET
ap-1725	1	30	surface	surface	NOUN
ap-1725	1	31	of	of	ADP
ap-1725	1	32	silicon	silicon	NOUN
ap-1725	1	33	wafers	wafer	NOUN
ap-1725	1	34	siarhei	siarhei	PROPN
ap-1725	1	35	bordusau∗	bordusau∗	PROPN
ap-1725	1	36	,	,	PUNCT
ap-1725	1	37	siarhei	siarhei	PROPN
ap-1725	1	38	madveika	madveika	NOUN
ap-1725	1	39	,	,	PUNCT
ap-1725	1	40	anatolii	anatolii	NOUN
ap-1725	1	41	dostanko	dostanko	PROPN
ap-1725	1	42	belorussian	belorussian	PROPN
ap-1725	1	43	state	state	PROPN
ap-1725	1	44	university	university	PROPN
ap-1725	1	45	of	of	ADP
ap-1725	1	46	informatics	informatic	NOUN
ap-1725	1	47	and	and	CCONJ
ap-1725	1	48	radioelectronics	radioelectronic	NOUN
ap-1725	1	49	,	,	PUNCT
ap-1725	1	50	minsk	minsk	PROPN
ap-1725	1	51	,	,	PUNCT
ap-1725	1	52	belarus	belarus	PROPN
ap-1725	1	53	∗	∗	NOUN
ap-1725	1	54	corresponding	correspond	VERB
ap-1725	1	55	author	author	NOUN
ap-1725	1	56	:	:	PUNCT
ap-1725	1	57	bordusov@bsuir.by	bordusov@bsuir.by	PROPN
ap-1725	1	58	abstract	abstract	NOUN
ap-1725	1	59	.	.	PUNCT
ap-1725	2	1	at	at	ADP
ap-1725	2	2	present	present	ADJ
ap-1725	2	3	,	,	PUNCT
ap-1725	2	4	the	the	DET
ap-1725	2	5	research	research	NOUN
ap-1725	2	6	for	for	ADP
ap-1725	2	7	finding	find	VERB
ap-1725	2	8	new	new	ADJ
ap-1725	2	9	technical	technical	ADJ
ap-1725	2	10	methods	method	NOUN
ap-1725	2	11	of	of	ADP
ap-1725	2	12	treating	treat	VERB
ap-1725	2	13	materials	material	NOUN
ap-1725	2	14	with	with	ADP
ap-1725	2	15	plasma	plasma	NOUN
ap-1725	2	16	,	,	PUNCT
ap-1725	2	17	including	include	VERB
ap-1725	2	18	the	the	DET
ap-1725	2	19	development	development	NOUN
ap-1725	2	20	of	of	ADP
ap-1725	2	21	energy	energy	NOUN
ap-1725	2	22	and	and	CCONJ
ap-1725	2	23	resource	resource	NOUN
ap-1725	2	24	saving	saving	NOUN
ap-1725	2	25	technologies	technology	NOUN
ap-1725	2	26	for	for	ADP
ap-1725	2	27	microelectronic	microelectronic	ADJ
ap-1725	2	28	manufacturing	manufacturing	NOUN
ap-1725	2	29	,	,	PUNCT
ap-1725	2	30	is	be	AUX
ap-1725	2	31	particularly	particularly	ADV
ap-1725	2	32	actual	actual	ADJ
ap-1725	2	33	.	.	PUNCT
ap-1725	3	1	in	in	ADP
ap-1725	3	2	order	order	NOUN
ap-1725	3	3	to	to	PART
ap-1725	3	4	improve	improve	VERB
ap-1725	3	5	the	the	DET
ap-1725	3	6	efficiency	efficiency	NOUN
ap-1725	3	7	of	of	ADP
ap-1725	3	8	microwave	microwave	NOUN
ap-1725	3	9	plasma	plasma	NOUN
ap-1725	3	10	chemical	chemical	NOUN
ap-1725	3	11	ashing	ashing	NOUN
ap-1725	3	12	of	of	ADP
ap-1725	3	13	photoresist	photoresist	ADJ
ap-1725	3	14	films	film	NOUN
ap-1725	3	15	from	from	ADP
ap-1725	3	16	the	the	DET
ap-1725	3	17	surface	surface	NOUN
ap-1725	3	18	of	of	ADP
ap-1725	3	19	silicon	silicon	NOUN
ap-1725	3	20	wafers	wafer	VERB
ap-1725	3	21	a	a	DET
ap-1725	3	22	two	two	NUM
ap-1725	3	23	-	-	PUNCT
ap-1725	3	24	stage	stage	NOUN
ap-1725	3	25	process	process	NOUN
ap-1725	3	26	of	of	ADP
ap-1725	3	27	treating	treat	VERB
ap-1725	3	28	was	be	AUX
ap-1725	3	29	developed	develop	VERB
ap-1725	3	30	.	.	PUNCT
ap-1725	4	1	the	the	DET
ap-1725	4	2	idea	idea	NOUN
ap-1725	4	3	of	of	ADP
ap-1725	4	4	the	the	DET
ap-1725	4	5	developed	develop	VERB
ap-1725	4	6	process	process	NOUN
ap-1725	4	7	is	be	AUX
ap-1725	4	8	that	that	SCONJ
ap-1725	4	9	wafers	wafer	NOUN
ap-1725	4	10	coated	coat	VERB
ap-1725	4	11	with	with	ADP
ap-1725	4	12	photoresist	photoresist	NOUN
ap-1725	4	13	are	be	AUX
ap-1725	4	14	pre	pre	ADJ
ap-1725	4	15	-	-	ADJ
ap-1725	4	16	heated	heated	ADJ
ap-1725	4	17	by	by	ADP
ap-1725	4	18	microwave	microwave	NOUN
ap-1725	4	19	energy	energy	NOUN
ap-1725	4	20	.	.	PUNCT
ap-1725	5	1	this	this	PRON
ap-1725	5	2	occurs	occur	VERB
ap-1725	5	3	because	because	SCONJ
ap-1725	5	4	the	the	DET
ap-1725	5	5	microwave	microwave	NOUN
ap-1725	5	6	energy	energy	NOUN
ap-1725	5	7	initially	initially	ADV
ap-1725	5	8	is	be	AUX
ap-1725	5	9	not	not	PART
ap-1725	5	10	spent	spend	VERB
ap-1725	5	11	on	on	ADP
ap-1725	5	12	the	the	DET
ap-1725	5	13	excitation	excitation	NOUN
ap-1725	5	14	and	and	CCONJ
ap-1725	5	15	maintenance	maintenance	NOUN
ap-1725	5	16	of	of	ADP
ap-1725	5	17	a	a	DET
ap-1725	5	18	microwave	microwave	NOUN
ap-1725	5	19	discharge	discharge	NOUN
ap-1725	5	20	but	but	CCONJ
ap-1725	5	21	it	it	PRON
ap-1725	5	22	is	be	AUX
ap-1725	5	23	absorbed	absorb	VERB
ap-1725	5	24	by	by	ADP
ap-1725	5	25	silicon	silicon	NOUN
ap-1725	5	26	wafers	wafer	NOUN
ap-1725	5	27	which	which	PRON
ap-1725	5	28	have	have	VERB
ap-1725	5	29	a	a	DET
ap-1725	5	30	high	high	ADJ
ap-1725	5	31	tangent	tangent	NOUN
ap-1725	5	32	of	of	ADP
ap-1725	5	33	dielectric	dielectric	ADJ
ap-1725	5	34	losses	loss	NOUN
ap-1725	5	35	.	.	PUNCT
ap-1725	6	1	during	during	ADP
ap-1725	6	2	the	the	DET
ap-1725	6	3	next	next	ADJ
ap-1725	6	4	step	step	NOUN
ap-1725	6	5	after	after	ADP
ap-1725	6	6	the	the	DET
ap-1725	6	7	excitation	excitation	NOUN
ap-1725	6	8	of	of	ADP
ap-1725	6	9	the	the	DET
ap-1725	6	10	microwave	microwave	NOUN
ap-1725	6	11	discharge	discharge	VERB
ap-1725	6	12	the	the	DET
ap-1725	6	13	interaction	interaction	NOUN
ap-1725	6	14	of	of	ADP
ap-1725	6	15	oxygen	oxygen	NOUN
ap-1725	6	16	plasma	plasma	NOUN
ap-1725	6	17	with	with	ADP
ap-1725	6	18	a	a	DET
ap-1725	6	19	pre	pre	ADJ
ap-1725	6	20	-	-	ADJ
ap-1725	6	21	heated	heated	ADJ
ap-1725	6	22	photoresist	photoresist	NOUN
ap-1725	6	23	films	film	NOUN
ap-1725	6	24	proceeds	proceed	VERB
ap-1725	6	25	more	more	ADV
ap-1725	6	26	intensively	intensively	ADV
ap-1725	6	27	.	.	PUNCT
ap-1725	7	1	the	the	DET
ap-1725	7	2	delay	delay	NOUN
ap-1725	7	3	of	of	ADP
ap-1725	7	4	the	the	DET
ap-1725	7	5	start	start	NOUN
ap-1725	7	6	of	of	ADP
ap-1725	7	7	plasma	plasma	NOUN
ap-1725	7	8	forming	form	VERB
ap-1725	7	9	process	process	NOUN
ap-1725	7	10	in	in	ADP
ap-1725	7	11	the	the	DET
ap-1725	7	12	vacuum	vacuum	PROPN
ap-1725	7	13	chamber	chamber	NOUN
ap-1725	7	14	of	of	ADP
ap-1725	7	15	a	a	DET
ap-1725	7	16	plasmatron	plasmatron	NOUN
ap-1725	7	17	with	with	ADP
ap-1725	7	18	respect	respect	NOUN
ap-1725	7	19	to	to	ADP
ap-1725	7	20	the	the	DET
ap-1725	7	21	beginning	beginning	NOUN
ap-1725	7	22	of	of	ADP
ap-1725	7	23	microwave	microwave	NOUN
ap-1725	7	24	energy	energy	NOUN
ap-1725	7	25	generation	generation	NOUN
ap-1725	7	26	by	by	ADP
ap-1725	7	27	a	a	DET
ap-1725	7	28	magnetron	magnetron	NOUN
ap-1725	7	29	leads	lead	VERB
ap-1725	7	30	to	to	ADP
ap-1725	7	31	the	the	DET
ap-1725	7	32	increase	increase	NOUN
ap-1725	7	33	of	of	ADP
ap-1725	7	34	the	the	DET
ap-1725	7	35	total	total	ADJ
ap-1725	7	36	rate	rate	NOUN
ap-1725	7	37	of	of	ADP
ap-1725	7	38	photoresist	photoresist	NOUN
ap-1725	7	39	ashing	ashing	NOUN
ap-1725	7	40	from	from	ADP
ap-1725	7	41	the	the	DET
ap-1725	7	42	surface	surface	NOUN
ap-1725	7	43	of	of	ADP
ap-1725	7	44	silicon	silicon	NOUN
ap-1725	7	45	wafers	wafer	NOUN
ap-1725	7	46	approximately	approximately	ADV
ap-1725	7	47	1.7	1.7	NUM
ap-1725	7	48	times	time	NOUN
ap-1725	7	49	.	.	PUNCT
ap-1725	8	1	the	the	DET
ap-1725	8	2	advantage	advantage	NOUN
ap-1725	8	3	of	of	ADP
ap-1725	8	4	this	this	DET
ap-1725	8	5	method	method	NOUN
ap-1725	8	6	of	of	ADP
ap-1725	8	7	microwave	microwave	NOUN
ap-1725	8	8	plasma	plasma	NOUN
ap-1725	8	9	chemical	chemical	NOUN
ap-1725	8	10	processing	processing	NOUN
ap-1725	8	11	of	of	ADP
ap-1725	8	12	semi	semi	ADJ
ap-1725	8	13	-	-	ADJ
ap-1725	8	14	conductor	conductor	ADJ
ap-1725	8	15	wafers	wafer	NOUN
ap-1725	8	16	is	be	AUX
ap-1725	8	17	the	the	DET
ap-1725	8	18	possibility	possibility	NOUN
ap-1725	8	19	of	of	ADP
ap-1725	8	20	intensifying	intensify	VERB
ap-1725	8	21	the	the	DET
ap-1725	8	22	process	process	NOUN
ap-1725	8	23	without	without	ADP
ap-1725	8	24	changing	change	VERB
ap-1725	8	25	the	the	DET
ap-1725	8	26	design	design	NOUN
ap-1725	8	27	of	of	ADP
ap-1725	8	28	microwave	microwave	NOUN
ap-1725	8	29	discharge	discharge	NOUN
ap-1725	8	30	module	module	NOUN
ap-1725	8	31	and	and	CCONJ
ap-1725	8	32	without	without	ADP
ap-1725	8	33	increasing	increase	VERB
ap-1725	8	34	the	the	DET
ap-1725	8	35	input	input	NOUN
ap-1725	8	36	microwave	microwave	NOUN
ap-1725	8	37	power	power	NOUN
ap-1725	8	38	supplied	supply	VERB
ap-1725	8	39	into	into	ADP
ap-1725	8	40	the	the	DET
ap-1725	8	41	discharge	discharge	NOUN
ap-1725	8	42	.	.	PUNCT
ap-1725	9	1	keywords	keyword	NOUN
ap-1725	9	2	:	:	PUNCT
ap-1725	9	3	microwave	microwave	NOUN
ap-1725	9	4	plasma	plasma	NOUN
ap-1725	9	5	,	,	PUNCT
ap-1725	9	6	microwave	microwave	NOUN
ap-1725	9	7	plasmatron	plasmatron	NOUN
ap-1725	9	8	,	,	PUNCT
ap-1725	9	9	plasma	plasma	NOUN
ap-1725	9	10	chemical	chemical	NOUN
ap-1725	9	11	ashing	ashing	NOUN
ap-1725	9	12	of	of	ADP
ap-1725	9	13	photoresist	photoresist	NOUN
ap-1725	9	14	.	.	PUNCT
ap-1725	10	1	1	1	X
ap-1725	10	2	.	.	X
ap-1725	10	3	introduction	introduction	NOUN
ap-1725	10	4	at	at	ADP
ap-1725	10	5	present	present	ADJ
ap-1725	10	6	,	,	PUNCT
ap-1725	10	7	in	in	ADP
ap-1725	10	8	most	most	ADJ
ap-1725	10	9	cases	case	NOUN
ap-1725	10	10	the	the	DET
ap-1725	10	11	technology	technology	NOUN
ap-1725	10	12	of	of	ADP
ap-1725	10	13	plasma	plasma	NOUN
ap-1725	10	14	chemical	chemical	NOUN
ap-1725	10	15	photoresist	photoresist	NOUN
ap-1725	10	16	ashing	ashing	NOUN
ap-1725	10	17	from	from	ADP
ap-1725	10	18	the	the	DET
ap-1725	10	19	surface	surface	NOUN
ap-1725	10	20	of	of	ADP
ap-1725	10	21	semiconductor	semiconductor	NOUN
ap-1725	10	22	wafers	wafer	NOUN
ap-1725	10	23	uses	use	VERB
ap-1725	10	24	high	high	ADJ
ap-1725	10	25	frequency	frequency	NOUN
ap-1725	10	26	or	or	CCONJ
ap-1725	10	27	microwave	microwave	NOUN
ap-1725	10	28	discharges	discharge	NOUN
ap-1725	10	29	the	the	DET
ap-1725	10	30	main	main	ADJ
ap-1725	10	31	drawback	drawback	NOUN
ap-1725	10	32	of	of	ADP
ap-1725	10	33	which	which	PRON
ap-1725	10	34	is	be	AUX
ap-1725	10	35	inertia	inertia	NOUN
ap-1725	10	36	of	of	ADP
ap-1725	10	37	the	the	DET
ap-1725	10	38	process	process	NOUN
ap-1725	10	39	at	at	ADP
ap-1725	10	40	the	the	DET
ap-1725	10	41	beginning	beginning	NOUN
ap-1725	10	42	of	of	ADP
ap-1725	10	43	plasma	plasma	NOUN
ap-1725	10	44	forming	form	VERB
ap-1725	10	45	process	process	NOUN
ap-1725	10	46	.	.	PUNCT
ap-1725	11	1	ashing	ashing	NOUN
ap-1725	11	2	of	of	ADP
ap-1725	11	3	photoresist	photoresist	NOUN
ap-1725	11	4	begins	begin	VERB
ap-1725	11	5	with	with	ADP
ap-1725	11	6	a	a	DET
ap-1725	11	7	delay	delay	NOUN
ap-1725	11	8	connected	connect	VERB
ap-1725	11	9	with	with	ADP
ap-1725	11	10	warming	warm	VERB
ap-1725	11	11	up	up	ADP
ap-1725	11	12	of	of	ADP
ap-1725	11	13	the	the	DET
ap-1725	11	14	reaction	reaction	NOUN
ap-1725	11	15	-	-	PUNCT
ap-1725	11	16	discharge	discharge	NOUN
ap-1725	11	17	chamber	chamber	NOUN
ap-1725	11	18	’s	’s	PART
ap-1725	11	19	construction	construction	NOUN
ap-1725	11	20	elements	element	NOUN
ap-1725	11	21	and	and	CCONJ
ap-1725	11	22	wafers	wafer	NOUN
ap-1725	11	23	.	.	PUNCT
ap-1725	12	1	the	the	DET
ap-1725	12	2	duration	duration	NOUN
ap-1725	12	3	of	of	ADP
ap-1725	12	4	the	the	DET
ap-1725	12	5	delay	delay	NOUN
ap-1725	12	6	being	be	AUX
ap-1725	12	7	dependent	dependent	ADJ
ap-1725	12	8	on	on	ADP
ap-1725	12	9	the	the	DET
ap-1725	12	10	temperature	temperature	NOUN
ap-1725	12	11	of	of	ADP
ap-1725	12	12	the	the	DET
ap-1725	12	13	reaction	reaction	NOUN
ap-1725	12	14	-	-	PUNCT
ap-1725	12	15	discharge	discharge	NOUN
ap-1725	12	16	chamber	chamber	NOUN
ap-1725	12	17	and	and	CCONJ
ap-1725	12	18	wafers	wafer	NOUN
ap-1725	12	19	,	,	PUNCT
ap-1725	12	20	and	and	CCONJ
ap-1725	12	21	,	,	PUNCT
ap-1725	12	22	consequently	consequently	ADV
ap-1725	12	23	,	,	PUNCT
ap-1725	12	24	on	on	ADP
ap-1725	12	25	the	the	DET
ap-1725	12	26	size	size	NOUN
ap-1725	12	27	and	and	CCONJ
ap-1725	12	28	volume	volume	NOUN
ap-1725	12	29	occupied	occupy	VERB
ap-1725	12	30	by	by	ADP
ap-1725	12	31	semiconductor	semiconductor	NOUN
ap-1725	12	32	wafers	wafer	NOUN
ap-1725	12	33	[	[	X
ap-1725	12	34	8	8	NUM
ap-1725	12	35	]	]	PUNCT
ap-1725	12	36	.	.	PUNCT
ap-1725	13	1	the	the	DET
ap-1725	13	2	transition	transition	NOUN
ap-1725	13	3	of	of	ADP
ap-1725	13	4	the	the	DET
ap-1725	13	5	microelectronic	microelectronic	ADJ
ap-1725	13	6	industry	industry	NOUN
ap-1725	13	7	to	to	ADP
ap-1725	13	8	the	the	DET
ap-1725	13	9	use	use	NOUN
ap-1725	13	10	of	of	ADP
ap-1725	13	11	200	200	NUM
ap-1725	13	12	mm	mm	NOUN
ap-1725	13	13	and	and	CCONJ
ap-1725	13	14	even	even	ADV
ap-1725	13	15	larger	large	ADJ
ap-1725	13	16	diameter	diameter	NOUN
ap-1725	13	17	wafers	wafer	NOUN
ap-1725	13	18	needs	need	VERB
ap-1725	13	19	reaction	reaction	NOUN
ap-1725	13	20	discharge	discharge	NOUN
ap-1725	13	21	chambers	chamber	NOUN
ap-1725	13	22	of	of	ADP
ap-1725	13	23	more	more	ADJ
ap-1725	13	24	than	than	ADP
ap-1725	13	25	0.005	0.005	NUM
ap-1725	13	26	m3	m3	PROPN
ap-1725	13	27	that	that	PRON
ap-1725	13	28	significantly	significantly	ADV
ap-1725	13	29	affects	affect	VERB
ap-1725	13	30	the	the	DET
ap-1725	13	31	duration	duration	NOUN
ap-1725	13	32	of	of	ADP
ap-1725	13	33	photoresist	photoresist	NOUN
ap-1725	13	34	ashing	ashing	NOUN
ap-1725	13	35	with	with	ADP
ap-1725	13	36	plasma	plasma	NOUN
ap-1725	13	37	.	.	PUNCT
ap-1725	14	1	the	the	DET
ap-1725	14	2	formation	formation	NOUN
ap-1725	14	3	of	of	ADP
ap-1725	14	4	high	high	ADJ
ap-1725	14	5	volume	volume	NOUN
ap-1725	14	6	and	and	CCONJ
ap-1725	14	7	large	large	ADJ
ap-1725	14	8	area	area	NOUN
ap-1725	14	9	microwave	microwave	NOUN
ap-1725	14	10	discharges	discharge	NOUN
ap-1725	14	11	leads	lead	VERB
ap-1725	14	12	to	to	ADP
ap-1725	14	13	certain	certain	ADJ
ap-1725	14	14	construction	construction	NOUN
ap-1725	14	15	difficulties	difficulty	NOUN
ap-1725	14	16	as	as	SCONJ
ap-1725	14	17	industrial	industrial	ADJ
ap-1725	14	18	microwave	microwave	NOUN
ap-1725	14	19	discharge	discharge	NOUN
ap-1725	14	20	plasma	plasma	NOUN
ap-1725	14	21	sources	source	NOUN
ap-1725	14	22	are	be	AUX
ap-1725	14	23	designed	design	VERB
ap-1725	14	24	for	for	ADP
ap-1725	14	25	2.45ghz	2.45ghz	NUM
ap-1725	14	26	frequency	frequency	NOUN
ap-1725	14	27	characterized	characterize	VERB
ap-1725	14	28	by	by	ADP
ap-1725	14	29	a	a	DET
ap-1725	14	30	small	small	ADJ
ap-1725	14	31	electromagnetic	electromagnetic	ADJ
ap-1725	14	32	wave	wave	NOUN
ap-1725	14	33	length	length	NOUN
ap-1725	14	34	(	(	PUNCT
ap-1725	14	35	12.2	12.2	NUM
ap-1725	14	36	cm	cm	NOUN
ap-1725	14	37	in	in	ADP
ap-1725	14	38	open	open	ADJ
ap-1725	14	39	space	space	NOUN
ap-1725	15	1	[	[	X
ap-1725	15	2	12	12	NUM
ap-1725	15	3	]	]	PUNCT
ap-1725	15	4	)	)	PUNCT
ap-1725	15	5	and	and	CCONJ
ap-1725	15	6	a	a	DET
ap-1725	15	7	small	small	ADJ
ap-1725	15	8	depth	depth	NOUN
ap-1725	15	9	of	of	ADP
ap-1725	15	10	electromagnetic	electromagnetic	ADJ
ap-1725	15	11	field	field	NOUN
ap-1725	15	12	’s	’s	PART
ap-1725	15	13	penetration	penetration	NOUN
ap-1725	15	14	into	into	ADP
ap-1725	15	15	plasma	plasma	NOUN
ap-1725	15	16	.	.	PUNCT
ap-1725	16	1	experiments	experiment	NOUN
ap-1725	16	2	to	to	ADP
ap-1725	16	3	ash	ash	NOUN
ap-1725	16	4	photoresist	photoresist	NOUN
ap-1725	16	5	from	from	ADP
ap-1725	16	6	the	the	DET
ap-1725	16	7	surface	surface	NOUN
ap-1725	16	8	of	of	ADP
ap-1725	16	9	silicon	silicon	NOUN
ap-1725	16	10	wafers	wafer	NOUN
ap-1725	16	11	during	during	ADP
ap-1725	16	12	batch	batch	NOUN
ap-1725	16	13	processing	processing	NOUN
ap-1725	16	14	led	lead	VERB
ap-1725	16	15	to	to	ADP
ap-1725	16	16	finding	find	VERB
ap-1725	16	17	out	out	ADP
ap-1725	16	18	a	a	DET
ap-1725	16	19	specific	specific	ADJ
ap-1725	16	20	character	character	NOUN
ap-1725	16	21	of	of	ADP
ap-1725	16	22	“	"	PUNCT
ap-1725	16	23	loading	loading	NOUN
ap-1725	16	24	”	"	PUNCT
ap-1725	16	25	effect	effect	NOUN
ap-1725	16	26	manifesting	manifest	VERB
ap-1725	16	27	itself	itself	PRON
ap-1725	16	28	in	in	ADP
ap-1725	16	29	partial	partial	ADJ
ap-1725	16	30	absorption	absorption	NOUN
ap-1725	16	31	of	of	ADP
ap-1725	16	32	the	the	DET
ap-1725	16	33	electromagnetic	electromagnetic	ADJ
ap-1725	16	34	wave	wave	NOUN
ap-1725	16	35	power	power	NOUN
ap-1725	16	36	entering	enter	VERB
ap-1725	16	37	a	a	DET
ap-1725	16	38	microwave	microwave	NOUN
ap-1725	16	39	resonator	resonator	NOUN
ap-1725	16	40	by	by	ADP
ap-1725	16	41	the	the	DET
ap-1725	16	42	material	material	NOUN
ap-1725	16	43	with	with	ADP
ap-1725	16	44	a	a	DET
ap-1725	16	45	high	high	ADJ
ap-1725	16	46	tangent	tangent	NOUN
ap-1725	16	47	dielectric	dielectric	ADJ
ap-1725	16	48	loss	loss	NOUN
ap-1725	16	49	(	(	PUNCT
ap-1725	16	50	silicon	silicon	NOUN
ap-1725	16	51	)	)	PUNCT
ap-1725	17	1	[	[	X
ap-1725	17	2	1	1	NUM
ap-1725	17	3	,	,	PUNCT
ap-1725	17	4	4	4	NUM
ap-1725	17	5	,	,	PUNCT
ap-1725	17	6	5	5	NUM
ap-1725	17	7	]	]	PUNCT
ap-1725	17	8	.	.	PUNCT
ap-1725	18	1	peculiar	peculiar	ADJ
ap-1725	18	2	features	feature	NOUN
ap-1725	18	3	of	of	ADP
ap-1725	18	4	microwave	microwave	NOUN
ap-1725	18	5	energy	energy	NOUN
ap-1725	18	6	and	and	CCONJ
ap-1725	18	7	silicon	silicon	NOUN
ap-1725	18	8	wafer	wafer	NOUN
ap-1725	18	9	interaction	interaction	NOUN
ap-1725	18	10	should	should	AUX
ap-1725	18	11	be	be	AUX
ap-1725	18	12	taken	take	VERB
ap-1725	18	13	into	into	ADP
ap-1725	18	14	consideration	consideration	NOUN
ap-1725	18	15	as	as	ADV
ap-1725	18	16	well	well	ADV
ap-1725	18	17	as	as	ADP
ap-1725	18	18	used	use	VERB
ap-1725	18	19	in	in	ADP
ap-1725	18	20	developing	develop	VERB
ap-1725	18	21	and	and	CCONJ
ap-1725	18	22	their	their	PRON
ap-1725	18	23	processing	processing	NOUN
ap-1725	18	24	in	in	ADP
ap-1725	18	25	plasma	plasma	NOUN
ap-1725	18	26	microwave	microwave	NOUN
ap-1725	18	27	discharge	discharge	NOUN
ap-1725	18	28	.	.	PUNCT
ap-1725	19	1	the	the	DET
ap-1725	19	2	essence	essence	NOUN
ap-1725	19	3	of	of	ADP
ap-1725	19	4	photoresist	photoresist	ADJ
ap-1725	19	5	plasma	plasma	NOUN
ap-1725	19	6	chemical	chemical	NOUN
ap-1725	19	7	ashing	ashing	NOUN
ap-1725	19	8	lies	lie	VERB
ap-1725	19	9	in	in	ADP
ap-1725	19	10	the	the	DET
ap-1725	19	11	interaction	interaction	NOUN
ap-1725	19	12	of	of	ADP
ap-1725	19	13	active	active	ADJ
ap-1725	19	14	particles	particle	NOUN
ap-1725	19	15	,	,	PUNCT
ap-1725	19	16	as	as	ADP
ap-1725	19	17	a	a	DET
ap-1725	19	18	rule	rule	NOUN
ap-1725	19	19	,	,	PUNCT
ap-1725	19	20	oxygen	oxygen	NOUN
ap-1725	19	21	plasma	plasma	NOUN
ap-1725	19	22	(	(	PUNCT
ap-1725	19	23	atoms	atom	NOUN
ap-1725	19	24	,	,	PUNCT
ap-1725	19	25	excited	excited	ADJ
ap-1725	19	26	molecules	molecule	NOUN
ap-1725	19	27	,	,	PUNCT
ap-1725	19	28	ions	ion	NOUN
ap-1725	19	29	,	,	PUNCT
ap-1725	19	30	radicals	radical	NOUN
ap-1725	19	31	)	)	PUNCT
ap-1725	19	32	with	with	ADP
ap-1725	19	33	photoresist	photoresist	ADJ
ap-1725	19	34	molecules	molecule	NOUN
ap-1725	19	35	which	which	PRON
ap-1725	19	36	are	be	AUX
ap-1725	19	37	organic	organic	ADJ
ap-1725	19	38	compounds	compound	NOUN
ap-1725	19	39	[	[	X
ap-1725	19	40	10	10	NUM
ap-1725	19	41	]	]	PUNCT
ap-1725	19	42	.	.	PUNCT
ap-1725	20	1	the	the	DET
ap-1725	20	2	speed	speed	NOUN
ap-1725	20	3	of	of	ADP
ap-1725	20	4	these	these	DET
ap-1725	20	5	reactions	reaction	NOUN
ap-1725	20	6	is	be	AUX
ap-1725	20	7	determined	determine	VERB
ap-1725	20	8	by	by	ADP
ap-1725	20	9	the	the	DET
ap-1725	20	10	streams	stream	NOUN
ap-1725	20	11	of	of	ADP
ap-1725	20	12	particles	particle	NOUN
ap-1725	20	13	onto	onto	ADP
ap-1725	20	14	the	the	DET
ap-1725	20	15	wafer	wafer	NOUN
ap-1725	20	16	and	and	CCONJ
ap-1725	20	17	their	their	PRON
ap-1725	20	18	temperature	temperature	NOUN
ap-1725	20	19	.	.	PUNCT
ap-1725	21	1	hence	hence	ADV
ap-1725	21	2	,	,	PUNCT
ap-1725	21	3	with	with	ADP
ap-1725	21	4	the	the	DET
ap-1725	21	5	increase	increase	NOUN
ap-1725	21	6	of	of	ADP
ap-1725	21	7	reaction	reaction	NOUN
ap-1725	21	8	discharge	discharge	NOUN
ap-1725	21	9	chamber	chamber	NOUN
ap-1725	21	10	’s	’s	PART
ap-1725	21	11	dimensions	dimension	NOUN
ap-1725	21	12	,	,	PUNCT
ap-1725	21	13	quantity	quantity	NOUN
ap-1725	21	14	and	and	CCONJ
ap-1725	21	15	diameter	diameter	NOUN
ap-1725	21	16	of	of	ADP
ap-1725	21	17	plasmatron	plasmatron	NOUN
ap-1725	21	18	’s	’s	PART
ap-1725	21	19	semiconductor	semiconductor	NOUN
ap-1725	21	20	wafers	wafer	NOUN
ap-1725	21	21	treated	treat	VERB
ap-1725	21	22	in	in	ADP
ap-1725	21	23	the	the	DET
ap-1725	21	24	chamber	chamber	NOUN
ap-1725	21	25	,	,	PUNCT
ap-1725	21	26	it	it	PRON
ap-1725	21	27	is	be	AUX
ap-1725	21	28	necessary	necessary	ADJ
ap-1725	21	29	to	to	PART
ap-1725	21	30	increase	increase	VERB
ap-1725	21	31	the	the	DET
ap-1725	21	32	power	power	NOUN
ap-1725	21	33	of	of	ADP
ap-1725	21	34	supplied	supply	VERB
ap-1725	21	35	microwave	microwave	NOUN
ap-1725	21	36	radiation	radiation	NOUN
ap-1725	21	37	.	.	PUNCT
ap-1725	22	1	since	since	SCONJ
ap-1725	22	2	medium	medium	ADJ
ap-1725	22	3	power	power	NOUN
ap-1725	22	4	microwave	microwave	NOUN
ap-1725	22	5	magnetrons	magnetron	NOUN
ap-1725	22	6	for	for	ADP
ap-1725	22	7	technological	technological	ADJ
ap-1725	22	8	application	application	NOUN
ap-1725	22	9	have	have	VERB
ap-1725	22	10	maximum	maximum	ADJ
ap-1725	22	11	power	power	NOUN
ap-1725	22	12	about	about	ADV
ap-1725	22	13	0.8	0.8	NUM
ap-1725	22	14	÷	÷	NUM
ap-1725	22	15	1.5	1.5	NUM
ap-1725	22	16	kw	kw	NOUN
ap-1725	23	1	[	[	X
ap-1725	23	2	6	6	NUM
ap-1725	23	3	]	]	PUNCT
ap-1725	23	4	,	,	PUNCT
ap-1725	23	5	it	it	PRON
ap-1725	23	6	becomes	become	VERB
ap-1725	23	7	necessary	necessary	ADJ
ap-1725	23	8	to	to	PART
ap-1725	23	9	create	create	VERB
ap-1725	23	10	additional	additional	ADJ
ap-1725	23	11	stimulating	stimulating	ADJ
ap-1725	23	12	effects	effect	NOUN
ap-1725	23	13	on	on	ADP
ap-1725	23	14	the	the	DET
ap-1725	23	15	process	process	NOUN
ap-1725	23	16	of	of	ADP
ap-1725	23	17	batch	batch	NOUN
ap-1725	23	18	microwave	microwave	NOUN
ap-1725	23	19	plasma	plasma	NOUN
ap-1725	23	20	chemical	chemical	NOUN
ap-1725	23	21	treatment	treatment	NOUN
ap-1725	23	22	of	of	ADP
ap-1725	23	23	materials	material	NOUN
ap-1725	23	24	.	.	PUNCT
ap-1725	24	1	the	the	DET
ap-1725	24	2	methods	method	NOUN
ap-1725	24	3	of	of	ADP
ap-1725	24	4	controlling	control	VERB
ap-1725	24	5	the	the	DET
ap-1725	24	6	processes	process	NOUN
ap-1725	24	7	of	of	ADP
ap-1725	24	8	plasma	plasma	NOUN
ap-1725	24	9	chemical	chemical	NOUN
ap-1725	24	10	treatment	treatment	NOUN
ap-1725	24	11	of	of	ADP
ap-1725	24	12	semiconductor	semiconductor	NOUN
ap-1725	24	13	wafers	wafer	NOUN
ap-1725	24	14	with	with	ADP
ap-1725	24	15	the	the	DET
ap-1725	24	16	use	use	NOUN
ap-1725	24	17	of	of	ADP
ap-1725	24	18	gas	gas	NOUN
ap-1725	24	19	plasma	plasma	NOUN
ap-1725	24	20	microwave	microwave	NOUN
ap-1725	24	21	discharge	discharge	NOUN
ap-1725	24	22	may	may	AUX
ap-1725	24	23	be	be	AUX
ap-1725	24	24	conventionally	conventionally	ADV
ap-1725	24	25	divided	divide	VERB
ap-1725	24	26	into	into	ADP
ap-1725	24	27	two	two	NUM
ap-1725	24	28	groups	group	NOUN
ap-1725	24	29	:	:	PUNCT
ap-1725	24	30	by	by	ADP
ap-1725	24	31	changing	change	VERB
ap-1725	24	32	the	the	DET
ap-1725	24	33	modes	mode	NOUN
ap-1725	24	34	of	of	ADP
ap-1725	24	35	treatment	treatment	NOUN
ap-1725	24	36	(	(	PUNCT
ap-1725	24	37	power	power	NOUN
ap-1725	24	38	,	,	PUNCT
ap-1725	24	39	frequency	frequency	NOUN
ap-1725	24	40	and	and	CCONJ
ap-1725	24	41	form	form	NOUN
ap-1725	24	42	of	of	ADP
ap-1725	24	43	electric	electric	ADJ
ap-1725	24	44	pulses	pulse	NOUN
ap-1725	24	45	etc	etc	X
ap-1725	24	46	.	.	PUNCT
ap-1725	24	47	)	)	PUNCT
ap-1725	24	48	and	and	CCONJ
ap-1725	24	49	by	by	ADP
ap-1725	24	50	changing	change	VERB
ap-1725	24	51	non	non	ADJ
ap-1725	24	52	electrical	electrical	ADJ
ap-1725	24	53	operation	operation	NOUN
ap-1725	24	54	modes	mode	NOUN
ap-1725	24	55	(	(	PUNCT
ap-1725	24	56	pressure	pressure	NOUN
ap-1725	24	57	,	,	PUNCT
ap-1725	24	58	type	type	NOUN
ap-1725	24	59	of	of	ADP
ap-1725	24	60	gas	gas	NOUN
ap-1725	24	61	,	,	PUNCT
ap-1725	24	62	speed	speed	VERB
ap-1725	24	63	113	113	NUM
ap-1725	24	64	http://ctn.cvut.cz/ap/	http://ctn.cvut.cz/ap/	PROPN
ap-1725	24	65	siarhei	siarhei	PROPN
ap-1725	24	66	bordusau	bordusau	PROPN
ap-1725	24	67	,	,	PUNCT
ap-1725	24	68	siarhei	siarhei	PROPN
ap-1725	24	69	madveika	madveika	NOUN
ap-1725	24	70	,	,	PUNCT
ap-1725	24	71	anatolii	anatolii	VERB
ap-1725	24	72	dostanko	dostanko	PROPN
ap-1725	24	73	acta	acta	PROPN
ap-1725	24	74	polytechnica	polytechnica	PROPN
ap-1725	24	75	of	of	ADP
ap-1725	24	76	gas	gas	NOUN
ap-1725	24	77	stream	stream	NOUN
ap-1725	24	78	etc	etc	X
ap-1725	24	79	.	.	PUNCT
ap-1725	24	80	)	)	PUNCT
ap-1725	25	1	[	[	X
ap-1725	25	2	3	3	NUM
ap-1725	25	3	]	]	PUNCT
ap-1725	25	4	.	.	PUNCT
ap-1725	26	1	these	these	DET
ap-1725	26	2	ways	way	NOUN
ap-1725	26	3	are	be	AUX
ap-1725	26	4	not	not	PART
ap-1725	26	5	always	always	ADV
ap-1725	26	6	efficient	efficient	ADJ
ap-1725	26	7	enough	enough	ADV
ap-1725	26	8	and	and	CCONJ
ap-1725	26	9	since	since	SCONJ
ap-1725	26	10	the	the	DET
ap-1725	26	11	increase	increase	NOUN
ap-1725	26	12	of	of	ADP
ap-1725	26	13	rate	rate	NOUN
ap-1725	26	14	of	of	ADP
ap-1725	26	15	photoresist	photoresist	NOUN
ap-1725	26	16	ashing	ashing	NOUN
ap-1725	26	17	from	from	ADP
ap-1725	26	18	the	the	DET
ap-1725	26	19	wafer	wafer	NOUN
ap-1725	26	20	surface	surface	NOUN
ap-1725	26	21	is	be	AUX
ap-1725	26	22	proportional	proportional	ADJ
ap-1725	26	23	to	to	ADP
ap-1725	26	24	the	the	DET
ap-1725	26	25	value	value	NOUN
ap-1725	26	26	of	of	ADP
ap-1725	26	27	sum	sum	NOUN
ap-1725	26	28	power	power	NOUN
ap-1725	26	29	supplied	supply	VERB
ap-1725	26	30	to	to	ADP
ap-1725	26	31	the	the	DET
ap-1725	26	32	discharge	discharge	NOUN
ap-1725	26	33	from	from	ADP
ap-1725	26	34	various	various	ADJ
ap-1725	26	35	energy	energy	NOUN
ap-1725	26	36	sources	source	NOUN
ap-1725	26	37	,	,	PUNCT
ap-1725	26	38	stimulating	stimulate	VERB
ap-1725	26	39	the	the	DET
ap-1725	26	40	treatment	treatment	NOUN
ap-1725	26	41	process	process	NOUN
ap-1725	26	42	with	with	ADP
ap-1725	26	43	such	such	ADJ
ap-1725	26	44	types	type	NOUN
ap-1725	26	45	of	of	ADP
ap-1725	26	46	effects	effect	NOUN
ap-1725	26	47	as	as	ADP
ap-1725	26	48	bombarding	bombard	VERB
ap-1725	26	49	by	by	ADP
ap-1725	26	50	inert	inert	ADJ
ap-1725	26	51	gas	gas	NOUN
ap-1725	26	52	ions	ion	NOUN
ap-1725	26	53	,	,	PUNCT
ap-1725	26	54	laser	laser	NOUN
ap-1725	26	55	radiation	radiation	NOUN
ap-1725	26	56	,	,	PUNCT
ap-1725	26	57	electron	electron	NOUN
ap-1725	26	58	flow	flow	NOUN
ap-1725	26	59	,	,	PUNCT
ap-1725	26	60	thermal	thermal	ADJ
ap-1725	26	61	heating	heating	NOUN
ap-1725	26	62	before	before	ADP
ap-1725	26	63	the	the	DET
ap-1725	26	64	treatment	treatment	NOUN
ap-1725	26	65	,	,	PUNCT
ap-1725	26	66	heating	heat	VERB
ap-1725	26	67	up	up	ADP
ap-1725	26	68	with	with	ADP
ap-1725	26	69	microwave	microwave	NOUN
ap-1725	26	70	radiation	radiation	NOUN
ap-1725	26	71	etc	etc	X
ap-1725	26	72	.	.	X
ap-1725	26	73	,	,	PUNCT
ap-1725	26	74	is	be	AUX
ap-1725	26	75	of	of	ADP
ap-1725	26	76	great	great	ADJ
ap-1725	26	77	interest	interest	NOUN
ap-1725	27	1	[	[	X
ap-1725	27	2	9	9	NUM
ap-1725	27	3	]	]	PUNCT
ap-1725	27	4	.	.	PUNCT
ap-1725	28	1	wide	wide	ADJ
ap-1725	28	2	use	use	NOUN
ap-1725	28	3	of	of	ADP
ap-1725	28	4	additional	additional	ADJ
ap-1725	28	5	methods	method	NOUN
ap-1725	28	6	of	of	ADP
ap-1725	28	7	stimulating	stimulate	VERB
ap-1725	28	8	the	the	DET
ap-1725	28	9	processes	process	NOUN
ap-1725	28	10	of	of	ADP
ap-1725	28	11	plasma	plasma	NOUN
ap-1725	28	12	treatment	treatment	NOUN
ap-1725	28	13	processes	process	NOUN
ap-1725	28	14	of	of	ADP
ap-1725	28	15	materials	material	NOUN
ap-1725	28	16	is	be	AUX
ap-1725	28	17	hindered	hinder	VERB
ap-1725	28	18	by	by	ADP
ap-1725	28	19	insufficiently	insufficiently	ADV
ap-1725	28	20	developed	develop	VERB
ap-1725	28	21	technology	technology	NOUN
ap-1725	28	22	as	as	ADV
ap-1725	28	23	well	well	ADV
ap-1725	28	24	as	as	ADP
ap-1725	28	25	construction	construction	NOUN
ap-1725	28	26	differences	difference	NOUN
ap-1725	28	27	in	in	ADP
ap-1725	28	28	plasma	plasma	NOUN
ap-1725	28	29	chemical	chemical	NOUN
ap-1725	28	30	equipment	equipment	NOUN
ap-1725	28	31	.	.	PUNCT
ap-1725	29	1	in	in	ADP
ap-1725	29	2	order	order	NOUN
ap-1725	29	3	to	to	PART
ap-1725	29	4	stimulate	stimulate	VERB
ap-1725	29	5	the	the	DET
ap-1725	29	6	processes	process	NOUN
ap-1725	29	7	of	of	ADP
ap-1725	29	8	microwave	microwave	NOUN
ap-1725	29	9	plasma	plasma	NOUN
ap-1725	29	10	chemical	chemical	NOUN
ap-1725	29	11	photoresist	photoresist	NOUN
ap-1725	29	12	ashing	ashing	NOUN
ap-1725	29	13	from	from	ADP
ap-1725	29	14	the	the	DET
ap-1725	29	15	surface	surface	NOUN
ap-1725	29	16	of	of	ADP
ap-1725	29	17	semiconductor	semiconductor	NOUN
ap-1725	29	18	wafers	wafer	NOUN
ap-1725	29	19	we	we	PRON
ap-1725	29	20	suggest	suggest	VERB
ap-1725	29	21	using	use	VERB
ap-1725	29	22	microwave	microwave	NOUN
ap-1725	29	23	warming	warming	NOUN
ap-1725	29	24	up	up	ADP
ap-1725	29	25	before	before	ADP
ap-1725	29	26	the	the	DET
ap-1725	29	27	beginning	beginning	NOUN
ap-1725	29	28	of	of	ADP
ap-1725	29	29	plasma	plasma	NOUN
ap-1725	29	30	treatment	treatment	NOUN
ap-1725	29	31	.	.	PUNCT
ap-1725	30	1	while	while	SCONJ
ap-1725	30	2	plasma	plasma	NOUN
ap-1725	30	3	is	be	AUX
ap-1725	30	4	absent	absent	ADJ
ap-1725	30	5	in	in	ADP
ap-1725	30	6	the	the	DET
ap-1725	30	7	reaction	reaction	NOUN
ap-1725	30	8	discharge	discharge	NOUN
ap-1725	30	9	chamber	chamber	NOUN
ap-1725	30	10	during	during	ADP
ap-1725	30	11	microwave	microwave	NOUN
ap-1725	30	12	heating	heating	NOUN
ap-1725	30	13	,	,	PUNCT
ap-1725	30	14	energy	energy	NOUN
ap-1725	30	15	is	be	AUX
ap-1725	30	16	absorbed	absorb	VERB
ap-1725	30	17	straight	straight	ADV
ap-1725	30	18	in	in	ADP
ap-1725	30	19	the	the	DET
ap-1725	30	20	volume	volume	NOUN
ap-1725	30	21	of	of	ADP
ap-1725	30	22	the	the	DET
ap-1725	30	23	semiconductor	semiconductor	NOUN
ap-1725	30	24	material	material	NOUN
ap-1725	30	25	without	without	ADP
ap-1725	30	26	the	the	DET
ap-1725	30	27	mechanism	mechanism	NOUN
ap-1725	30	28	of	of	ADP
ap-1725	30	29	heat	heat	NOUN
ap-1725	30	30	transfer	transfer	NOUN
ap-1725	30	31	from	from	ADP
ap-1725	30	32	plasma	plasma	NOUN
ap-1725	30	33	to	to	ADP
ap-1725	30	34	wafers	wafer	NOUN
ap-1725	30	35	.	.	PUNCT
ap-1725	31	1	the	the	DET
ap-1725	31	2	reaction	reaction	NOUN
ap-1725	31	3	of	of	ADP
ap-1725	31	4	plasma	plasma	NOUN
ap-1725	31	5	chemical	chemical	NOUN
ap-1725	31	6	photoresist	photoresist	NOUN
ap-1725	31	7	ashing	ashing	NOUN
ap-1725	31	8	is	be	AUX
ap-1725	31	9	endothermic	endothermic	ADJ
ap-1725	31	10	,	,	PUNCT
ap-1725	31	11	so	so	ADV
ap-1725	31	12	photoresist	photoresist	PROPN
ap-1725	31	13	previously	previously	ADV
ap-1725	31	14	warmed	warm	VERB
ap-1725	31	15	up	up	ADP
ap-1725	31	16	during	during	ADP
ap-1725	31	17	the	the	DET
ap-1725	31	18	stage	stage	NOUN
ap-1725	31	19	of	of	ADP
ap-1725	31	20	plasma	plasma	NOUN
ap-1725	31	21	treatment	treatment	NOUN
ap-1725	31	22	will	will	AUX
ap-1725	31	23	be	be	AUX
ap-1725	31	24	ashed	ash	VERB
ap-1725	31	25	away	away	ADV
ap-1725	31	26	quicker	quick	ADV
ap-1725	31	27	.	.	PUNCT
ap-1725	32	1	the	the	DET
ap-1725	32	2	purpose	purpose	NOUN
ap-1725	32	3	of	of	ADP
ap-1725	32	4	the	the	DET
ap-1725	32	5	performed	perform	VERB
ap-1725	32	6	research	research	NOUN
ap-1725	32	7	was	be	AUX
ap-1725	32	8	to	to	PART
ap-1725	32	9	study	study	VERB
ap-1725	32	10	the	the	DET
ap-1725	32	11	application	application	NOUN
ap-1725	32	12	of	of	ADP
ap-1725	32	13	this	this	DET
ap-1725	32	14	method	method	NOUN
ap-1725	32	15	in	in	ADP
ap-1725	32	16	developing	develop	VERB
ap-1725	32	17	highly	highly	ADV
ap-1725	32	18	effective	effective	ADJ
ap-1725	32	19	technologies	technology	NOUN
ap-1725	32	20	and	and	CCONJ
ap-1725	32	21	the	the	DET
ap-1725	32	22	possibility	possibility	NOUN
ap-1725	32	23	of	of	ADP
ap-1725	32	24	its	its	PRON
ap-1725	32	25	use	use	NOUN
ap-1725	32	26	in	in	ADP
ap-1725	32	27	microwave	microwave	NOUN
ap-1725	32	28	plasma	plasma	NOUN
ap-1725	32	29	chemical	chemical	NOUN
ap-1725	32	30	etching	etch	VERB
ap-1725	32	31	processes	process	NOUN
ap-1725	32	32	using	use	VERB
ap-1725	32	33	the	the	DET
ap-1725	32	34	equipment	equipment	NOUN
ap-1725	32	35	already	already	ADV
ap-1725	32	36	available	available	ADJ
ap-1725	32	37	at	at	ADP
ap-1725	32	38	factories	factory	NOUN
ap-1725	32	39	.	.	PUNCT
ap-1725	33	1	2	2	X
ap-1725	33	2	.	.	X
ap-1725	33	3	method	method	NOUN
ap-1725	33	4	of	of	ADP
ap-1725	33	5	experiment	experiment	NOUN
ap-1725	33	6	the	the	DET
ap-1725	33	7	research	research	NOUN
ap-1725	33	8	was	be	AUX
ap-1725	33	9	carried	carry	VERB
ap-1725	33	10	out	out	ADP
ap-1725	33	11	on	on	ADP
ap-1725	33	12	the	the	DET
ap-1725	33	13	base	base	NOUN
ap-1725	33	14	of	of	ADP
ap-1725	33	15	microwave	microwave	NOUN
ap-1725	33	16	discharge	discharge	NOUN
ap-1725	33	17	installation	installation	NOUN
ap-1725	33	18	with	with	ADP
ap-1725	33	19	a	a	DET
ap-1725	33	20	quartz	quartz	NOUN
ap-1725	33	21	tunnel	tunnel	NOUN
ap-1725	33	22	-	-	PUNCT
ap-1725	33	23	flow	flow	NOUN
ap-1725	33	24	reactor	reactor	NOUN
ap-1725	33	25	200	200	NUM
ap-1725	33	26	mm	mm	NOUN
ap-1725	33	27	in	in	ADP
ap-1725	33	28	diameter	diameter	NOUN
ap-1725	33	29	and	and	CCONJ
ap-1725	33	30	320	320	NUM
ap-1725	33	31	mm	mm	NOUN
ap-1725	33	32	in	in	ADP
ap-1725	33	33	length	length	NOUN
ap-1725	33	34	with	with	ADP
ap-1725	33	35	a	a	DET
ap-1725	33	36	volume	volume	NOUN
ap-1725	33	37	about	about	ADP
ap-1725	33	38	0.009	0.009	NUM
ap-1725	33	39	m3	m3	PROPN
ap-1725	33	40	placed	place	VERB
ap-1725	33	41	in	in	ADP
ap-1725	33	42	the	the	DET
ap-1725	33	43	center	center	NOUN
ap-1725	33	44	of	of	ADP
ap-1725	33	45	a	a	DET
ap-1725	33	46	resonator	resonator	NOUN
ap-1725	33	47	.	.	PUNCT
ap-1725	34	1	an	an	DET
ap-1725	34	2	m-112	m-112	NOUN
ap-1725	34	3	microwave	microwave	NOUN
ap-1725	34	4	magnetron	magnetron	PROPN
ap-1725	34	5	was	be	AUX
ap-1725	34	6	used	use	VERB
ap-1725	34	7	for	for	ADP
ap-1725	34	8	generating	generate	VERB
ap-1725	34	9	electromagnetic	electromagnetic	ADJ
ap-1725	34	10	radiation	radiation	NOUN
ap-1725	34	11	of	of	ADP
ap-1725	34	12	at	at	ADV
ap-1725	34	13	least	least	ADJ
ap-1725	34	14	650w	650w	NOUN
ap-1725	34	15	,	,	PUNCT
ap-1725	34	16	the	the	DET
ap-1725	34	17	efficiency	efficiency	NOUN
ap-1725	34	18	coefficient	coefficient	NOUN
ap-1725	34	19	being	be	AUX
ap-1725	34	20	equal	equal	ADJ
ap-1725	34	21	to	to	ADP
ap-1725	34	22	60	60	NUM
ap-1725	34	23	%	%	NOUN
ap-1725	34	24	.	.	PUNCT
ap-1725	35	1	the	the	DET
ap-1725	35	2	total	total	ADJ
ap-1725	35	3	measured	measured	ADJ
ap-1725	35	4	power	power	NOUN
ap-1725	35	5	consumed	consume	VERB
ap-1725	35	6	by	by	ADP
ap-1725	35	7	the	the	DET
ap-1725	35	8	installation	installation	NOUN
ap-1725	35	9	was	be	AUX
ap-1725	35	10	equal	equal	ADJ
ap-1725	35	11	to	to	ADP
ap-1725	35	12	1300w	1300w	NUM
ap-1725	35	13	.	.	PUNCT
ap-1725	36	1	monocrystal	monocrystal	ADJ
ap-1725	36	2	silicon	silicon	NOUN
ap-1725	36	3	wafers	wafer	NOUN
ap-1725	36	4	,	,	PUNCT
ap-1725	36	5	76	76	NUM
ap-1725	36	6	mm	mm	NOUN
ap-1725	36	7	in	in	ADP
ap-1725	36	8	diameter	diameter	NOUN
ap-1725	36	9	and	and	CCONJ
ap-1725	36	10	0.3	0.3	NUM
ap-1725	36	11	mm	mm	NOUN
ap-1725	36	12	thick	thick	ADJ
ap-1725	36	13	,	,	PUNCT
ap-1725	36	14	coated	coat	VERB
ap-1725	36	15	with	with	ADP
ap-1725	36	16	of	of	ADP
ap-1725	36	17	1.4	1.4	NUM
ap-1725	36	18	±	±	NUM
ap-1725	36	19	0.1	0.1	NUM
ap-1725	36	20	µm	µm	ADP
ap-1725	36	21	thick	thick	ADJ
ap-1725	36	22	s1813g2sp15	s1813g2sp15	NOUN
ap-1725	36	23	photoresist	photoresist	NOUN
ap-1725	36	24	film	film	NOUN
ap-1725	36	25	,	,	PUNCT
ap-1725	36	26	treated	treat	VERB
ap-1725	36	27	in	in	ADP
ap-1725	36	28	accordance	accordance	NOUN
ap-1725	36	29	with	with	ADP
ap-1725	36	30	the	the	DET
ap-1725	36	31	standard	standard	ADJ
ap-1725	36	32	modes	mode	NOUN
ap-1725	36	33	of	of	ADP
ap-1725	36	34	lithography	lithography	NOUN
ap-1725	36	35	,	,	PUNCT
ap-1725	36	36	were	be	AUX
ap-1725	36	37	used	use	VERB
ap-1725	36	38	as	as	ADP
ap-1725	36	39	objects	object	NOUN
ap-1725	36	40	for	for	ADP
ap-1725	36	41	treating	treat	VERB
ap-1725	36	42	.	.	PUNCT
ap-1725	37	1	during	during	ADP
ap-1725	37	2	the	the	DET
ap-1725	37	3	experiments	experiment	NOUN
ap-1725	37	4	to	to	PART
ap-1725	37	5	study	study	VERB
ap-1725	37	6	the	the	DET
ap-1725	37	7	rate	rate	NOUN
ap-1725	37	8	of	of	ADP
ap-1725	37	9	photoresist	photoresist	NOUN
ap-1725	37	10	ashing	ash	VERB
ap-1725	37	11	the	the	DET
ap-1725	37	12	wafers	wafer	NOUN
ap-1725	37	13	were	be	AUX
ap-1725	37	14	placed	place	VERB
ap-1725	37	15	in	in	ADP
ap-1725	37	16	the	the	DET
ap-1725	37	17	reaction	reaction	NOUN
ap-1725	37	18	discharge	discharge	NOUN
ap-1725	37	19	chamber	chamber	NOUN
ap-1725	37	20	in	in	ADP
ap-1725	37	21	pairs	pair	NOUN
ap-1725	37	22	.	.	PUNCT
ap-1725	38	1	the	the	DET
ap-1725	38	2	moment	moment	NOUN
ap-1725	38	3	of	of	ADP
ap-1725	38	4	terminating	terminate	VERB
ap-1725	38	5	the	the	DET
ap-1725	38	6	microwave	microwave	NOUN
ap-1725	38	7	plasma	plasma	NOUN
ap-1725	38	8	chemical	chemical	NOUN
ap-1725	38	9	photoresist	photoresist	NOUN
ap-1725	38	10	ashing	ashing	NOUN
ap-1725	38	11	from	from	ADP
ap-1725	38	12	the	the	DET
ap-1725	38	13	surface	surface	NOUN
ap-1725	38	14	of	of	ADP
ap-1725	38	15	silicon	silicon	NOUN
ap-1725	38	16	wafers	wafer	NOUN
ap-1725	38	17	was	be	AUX
ap-1725	38	18	controlled	control	VERB
ap-1725	38	19	with	with	ADP
ap-1725	38	20	the	the	DET
ap-1725	38	21	spectrometer	spectrometer	NOUN
ap-1725	38	22	sl	sl	NOUN
ap-1725	38	23	40	40	NUM
ap-1725	38	24	-	-	PUNCT
ap-1725	38	25	2	2	NUM
ap-1725	38	26	-	-	PUNCT
ap-1725	38	27	2048	2048	NUM
ap-1725	38	28	isa	isa	NOUN
ap-1725	38	29	with	with	ADP
ap-1725	38	30	777.96	777.96	NUM
ap-1725	38	31	nm	nm	DET
ap-1725	38	32	oxygen	oxygen	NOUN
ap-1725	38	33	line	line	NOUN
ap-1725	38	34	intensity	intensity	NOUN
ap-1725	38	35	.	.	PUNCT
ap-1725	39	1	o2	o2	PROPN
ap-1725	39	2	from	from	ADP
ap-1725	39	3	oxygen	oxygen	NOUN
ap-1725	39	4	cylinders	cylinder	NOUN
ap-1725	39	5	was	be	AUX
ap-1725	39	6	used	use	VERB
ap-1725	39	7	as	as	ADP
ap-1725	39	8	plasma	plasma	NOUN
ap-1725	39	9	forming	form	VERB
ap-1725	39	10	gas	gas	NOUN
ap-1725	39	11	.	.	PUNCT
ap-1725	40	1	the	the	DET
ap-1725	40	2	temperature	temperature	NOUN
ap-1725	40	3	of	of	ADP
ap-1725	40	4	silicon	silicon	NOUN
ap-1725	40	5	wafers	wafer	NOUN
ap-1725	40	6	was	be	AUX
ap-1725	40	7	measured	measure	VERB
ap-1725	40	8	with	with	ADP
ap-1725	40	9	the	the	DET
ap-1725	40	10	help	help	NOUN
ap-1725	40	11	of	of	ADP
ap-1725	40	12	a	a	DET
ap-1725	40	13	pyrometer	pyrometer	NOUN
ap-1725	40	14	testo	testo	NOUN
ap-1725	40	15	830	830	NUM
ap-1725	40	16	-	-	PUNCT
ap-1725	40	17	t1	t1	NOUN
ap-1725	40	18	(	(	PUNCT
ap-1725	40	19	an	an	DET
ap-1725	40	20	infrared	infrared	ADJ
ap-1725	40	21	thermometer	thermometer	NOUN
ap-1725	40	22	)	)	PUNCT
ap-1725	40	23	.	.	PUNCT
ap-1725	41	1	3	3	X
ap-1725	41	2	.	.	X
ap-1725	41	3	results	result	NOUN
ap-1725	41	4	and	and	CCONJ
ap-1725	41	5	their	their	PRON
ap-1725	41	6	discussion	discussion	NOUN
ap-1725	41	7	in	in	ADP
ap-1725	41	8	the	the	DET
ap-1725	41	9	result	result	NOUN
ap-1725	41	10	of	of	ADP
ap-1725	41	11	experiments	experiment	NOUN
ap-1725	41	12	it	it	PRON
ap-1725	41	13	was	be	AUX
ap-1725	41	14	found	find	VERB
ap-1725	41	15	out	out	ADP
ap-1725	41	16	that	that	SCONJ
ap-1725	41	17	the	the	DET
ap-1725	41	18	delay	delay	NOUN
ap-1725	41	19	of	of	ADP
ap-1725	41	20	plasma	plasma	NOUN
ap-1725	41	21	forming	form	VERB
ap-1725	41	22	process	process	NOUN
ap-1725	41	23	in	in	ADP
ap-1725	41	24	a	a	DET
ap-1725	41	25	plasmatron	plasmatron	NOUN
ap-1725	41	26	vacuum	vacuum	PROPN
ap-1725	41	27	chamber	chamber	PROPN
ap-1725	41	28	with	with	ADP
ap-1725	41	29	respect	respect	NOUN
ap-1725	41	30	to	to	ADP
ap-1725	41	31	the	the	DET
ap-1725	41	32	beginning	beginning	NOUN
ap-1725	41	33	of	of	ADP
ap-1725	41	34	microwave	microwave	NOUN
ap-1725	41	35	energy	energy	NOUN
ap-1725	41	36	generated	generate	VERB
ap-1725	41	37	by	by	ADP
ap-1725	41	38	a	a	DET
ap-1725	41	39	magnetron	magnetron	NOUN
ap-1725	41	40	leads	lead	VERB
ap-1725	41	41	to	to	ADP
ap-1725	41	42	the	the	DET
ap-1725	41	43	increased	increase	VERB
ap-1725	41	44	rate	rate	NOUN
ap-1725	41	45	of	of	ADP
ap-1725	41	46	photoresist	photoresist	NOUN
ap-1725	41	47	ashing	ashing	NOUN
ap-1725	41	48	from	from	ADP
ap-1725	41	49	the	the	DET
ap-1725	41	50	surface	surface	NOUN
ap-1725	41	51	of	of	ADP
ap-1725	41	52	silicon	silicon	NOUN
ap-1725	41	53	wafers	wafer	NOUN
ap-1725	41	54	approximately	approximately	ADV
ap-1725	41	55	by	by	ADP
ap-1725	41	56	1.7	1.7	NUM
ap-1725	41	57	times	time	NOUN
ap-1725	41	58	and	and	CCONJ
ap-1725	41	59	reaches	reach	VERB
ap-1725	41	60	40	40	NUM
ap-1725	41	61	nm	nm	NOUN
ap-1725	41	62	/	/	SYM
ap-1725	41	63	s.	s.	PROPN
ap-1725	41	64	it	it	PRON
ap-1725	41	65	means	mean	VERB
ap-1725	41	66	that	that	SCONJ
ap-1725	41	67	the	the	DET
ap-1725	41	68	efficiency	efficiency	NOUN
ap-1725	41	69	of	of	ADP
ap-1725	41	70	plasma	plasma	NOUN
ap-1725	41	71	ashing	ashing	NOUN
ap-1725	41	72	of	of	ADP
ap-1725	41	73	photoresist	photoresist	NOUN
ap-1725	41	74	from	from	ADP
ap-1725	41	75	the	the	DET
ap-1725	41	76	surface	surface	NOUN
ap-1725	41	77	of	of	ADP
ap-1725	41	78	silicon	silicon	NOUN
ap-1725	41	79	wafers	wafer	NOUN
ap-1725	41	80	can	can	AUX
ap-1725	41	81	be	be	AUX
ap-1725	41	82	increased	increase	VERB
ap-1725	41	83	with	with	ADP
ap-1725	41	84	two	two	NUM
ap-1725	41	85	stage	stage	NOUN
ap-1725	41	86	method	method	NOUN
ap-1725	41	87	of	of	ADP
ap-1725	41	88	treatment	treatment	NOUN
ap-1725	41	89	.	.	PUNCT
ap-1725	42	1	the	the	DET
ap-1725	42	2	first	first	ADJ
ap-1725	42	3	stage	stage	NOUN
ap-1725	42	4	is	be	AUX
ap-1725	42	5	warming	warm	VERB
ap-1725	42	6	up	up	ADP
ap-1725	42	7	of	of	ADP
ap-1725	42	8	a	a	DET
ap-1725	42	9	semiconductor	semiconductor	NOUN
ap-1725	42	10	wafers	wafer	NOUN
ap-1725	42	11	with	with	ADP
ap-1725	42	12	microwave	microwave	NOUN
ap-1725	42	13	energy	energy	NOUN
ap-1725	42	14	,	,	PUNCT
ap-1725	42	15	the	the	DET
ap-1725	42	16	second	second	NOUN
ap-1725	42	17	is	be	AUX
ap-1725	42	18	interaction	interaction	NOUN
ap-1725	42	19	between	between	ADP
ap-1725	42	20	microwave	microwave	NOUN
ap-1725	42	21	plasma	plasma	NOUN
ap-1725	42	22	and	and	CCONJ
ap-1725	42	23	warmed	warm	VERB
ap-1725	42	24	up	up	ADP
ap-1725	42	25	photoresist	photoresist	NOUN
ap-1725	42	26	.	.	PUNCT
ap-1725	43	1	the	the	DET
ap-1725	43	2	essence	essence	NOUN
ap-1725	43	3	of	of	ADP
ap-1725	43	4	the	the	DET
ap-1725	43	5	developed	develop	VERB
ap-1725	43	6	two	two	NUM
ap-1725	43	7	-	-	PUNCT
ap-1725	43	8	stage	stage	NOUN
ap-1725	43	9	method	method	NOUN
ap-1725	43	10	of	of	ADP
ap-1725	43	11	plasma	plasma	NOUN
ap-1725	43	12	chemical	chemical	NOUN
ap-1725	43	13	photorest	photorest	ADJ
ap-1725	43	14	ashing	ashing	NOUN
ap-1725	43	15	from	from	ADP
ap-1725	43	16	the	the	DET
ap-1725	43	17	surface	surface	NOUN
ap-1725	43	18	of	of	ADP
ap-1725	43	19	semiconductor	semiconductor	NOUN
ap-1725	43	20	wafers	wafer	NOUN
ap-1725	43	21	lies	lie	VERB
ap-1725	43	22	in	in	ADP
ap-1725	43	23	a	a	DET
ap-1725	43	24	preliminary	preliminary	ADJ
ap-1725	43	25	warming	warming	NOUN
ap-1725	43	26	up	up	ADP
ap-1725	43	27	of	of	ADP
ap-1725	43	28	photoresist	photoresist	NOUN
ap-1725	43	29	with	with	ADP
ap-1725	43	30	microwave	microwave	NOUN
ap-1725	43	31	energy	energy	NOUN
ap-1725	43	32	.	.	PUNCT
ap-1725	44	1	initially	initially	ADV
ap-1725	44	2	,	,	PUNCT
ap-1725	44	3	microwave	microwave	NOUN
ap-1725	44	4	energy	energy	NOUN
ap-1725	44	5	is	be	AUX
ap-1725	44	6	not	not	PART
ap-1725	44	7	spent	spend	VERB
ap-1725	44	8	on	on	ADP
ap-1725	44	9	exciting	exciting	ADJ
ap-1725	44	10	and	and	CCONJ
ap-1725	44	11	maintaining	maintain	VERB
ap-1725	44	12	microwave	microwave	NOUN
ap-1725	44	13	discharge	discharge	NOUN
ap-1725	44	14	but	but	CCONJ
ap-1725	44	15	is	be	AUX
ap-1725	44	16	completely	completely	ADV
ap-1725	44	17	absorbed	absorb	VERB
ap-1725	44	18	by	by	ADP
ap-1725	44	19	silicon	silicon	NOUN
ap-1725	44	20	wafers	wafer	NOUN
ap-1725	44	21	with	with	ADP
ap-1725	44	22	photoresist	photoresist	NOUN
ap-1725	44	23	having	have	VERB
ap-1725	44	24	high	high	ADJ
ap-1725	44	25	tangent	tangent	NOUN
ap-1725	44	26	angle	angle	NOUN
ap-1725	44	27	of	of	ADP
ap-1725	44	28	dielectric	dielectric	ADJ
ap-1725	44	29	losses	loss	NOUN
ap-1725	44	30	thanks	thank	NOUN
ap-1725	44	31	to	to	ADP
ap-1725	44	32	which	which	PRON
ap-1725	44	33	they	they	PRON
ap-1725	44	34	are	be	AUX
ap-1725	44	35	warmed	warm	VERB
ap-1725	44	36	up	up	ADP
ap-1725	44	37	.	.	PUNCT
ap-1725	45	1	during	during	ADP
ap-1725	45	2	further	further	ADJ
ap-1725	45	3	interaction	interaction	NOUN
ap-1725	45	4	of	of	ADP
ap-1725	45	5	oxygen	oxygen	NOUN
ap-1725	45	6	plasma	plasma	NOUN
ap-1725	45	7	with	with	ADP
ap-1725	45	8	preliminarily	preliminarily	ADV
ap-1725	45	9	warmed	warm	VERB
ap-1725	45	10	up	up	ADP
ap-1725	45	11	photoresist	photoresist	NOUN
ap-1725	45	12	the	the	DET
ap-1725	45	13	process	process	NOUN
ap-1725	45	14	of	of	ADP
ap-1725	45	15	oxidizing	oxidize	VERB
ap-1725	45	16	destruction	destruction	NOUN
ap-1725	45	17	of	of	ADP
ap-1725	45	18	photoresist	photoresist	NOUN
ap-1725	45	19	is	be	AUX
ap-1725	45	20	more	more	ADV
ap-1725	45	21	intensive	intensive	ADJ
ap-1725	45	22	and	and	CCONJ
ap-1725	45	23	is	be	AUX
ap-1725	45	24	accompanied	accompany	VERB
ap-1725	45	25	by	by	ADP
ap-1725	45	26	volatile	volatile	ADJ
ap-1725	45	27	components	component	NOUN
ap-1725	45	28	of	of	ADP
ap-1725	45	29	reaction	reaction	NOUN
ap-1725	45	30	products	product	NOUN
ap-1725	45	31	,	,	PUNCT
ap-1725	45	32	which	which	PRON
ap-1725	45	33	are	be	AUX
ap-1725	45	34	removed	remove	VERB
ap-1725	45	35	from	from	ADP
ap-1725	45	36	the	the	DET
ap-1725	45	37	reaction	reaction	NOUN
ap-1725	45	38	chamber	chamber	NOUN
ap-1725	45	39	with	with	ADP
ap-1725	45	40	a	a	DET
ap-1725	45	41	vacuum	vacuum	NOUN
ap-1725	45	42	pump	pump	NOUN
ap-1725	45	43	.	.	PUNCT
ap-1725	46	1	the	the	DET
ap-1725	46	2	delay	delay	NOUN
ap-1725	46	3	of	of	ADP
ap-1725	46	4	plasma	plasma	NOUN
ap-1725	46	5	formation	formation	NOUN
ap-1725	46	6	with	with	ADP
ap-1725	46	7	respect	respect	NOUN
ap-1725	46	8	to	to	ADP
ap-1725	46	9	the	the	DET
ap-1725	46	10	beginning	beginning	NOUN
ap-1725	46	11	of	of	ADP
ap-1725	46	12	microwave	microwave	NOUN
ap-1725	46	13	energy	energy	NOUN
ap-1725	46	14	generation	generation	NOUN
ap-1725	46	15	by	by	ADP
ap-1725	46	16	a	a	DET
ap-1725	46	17	magnetron	magnetron	NOUN
ap-1725	46	18	was	be	AUX
ap-1725	46	19	performed	perform	VERB
ap-1725	46	20	in	in	ADP
ap-1725	46	21	the	the	DET
ap-1725	46	22	following	following	ADJ
ap-1725	46	23	way	way	NOUN
ap-1725	46	24	.	.	PUNCT
ap-1725	47	1	the	the	DET
ap-1725	47	2	reaction	reaction	NOUN
ap-1725	47	3	discharge	discharge	NOUN
ap-1725	47	4	chamber	chamber	NOUN
ap-1725	47	5	is	be	AUX
ap-1725	47	6	pumped	pump	VERB
ap-1725	47	7	out	out	ADP
ap-1725	47	8	to	to	ADP
ap-1725	47	9	a	a	DET
ap-1725	47	10	sufficient	sufficient	ADJ
ap-1725	47	11	pressure	pressure	NOUN
ap-1725	47	12	and	and	CCONJ
ap-1725	47	13	then	then	ADV
ap-1725	47	14	is	be	AUX
ap-1725	47	15	filled	fill	VERB
ap-1725	47	16	with	with	ADP
ap-1725	47	17	plasma	plasma	NOUN
ap-1725	47	18	forming	form	VERB
ap-1725	47	19	gas	gas	NOUN
ap-1725	47	20	to	to	PART
ap-1725	47	21	reach	reach	VERB
ap-1725	47	22	the	the	DET
ap-1725	47	23	pressure	pressure	NOUN
ap-1725	47	24	one	one	NUM
ap-1725	47	25	/	/	SYM
ap-1725	47	26	two	two	NUM
ap-1725	47	27	times	time	NOUN
ap-1725	47	28	higher	high	ADJ
ap-1725	47	29	than	than	ADP
ap-1725	47	30	the	the	DET
ap-1725	47	31	working	work	VERB
ap-1725	47	32	pressure	pressure	NOUN
ap-1725	47	33	at	at	ADP
ap-1725	47	34	which	which	PRON
ap-1725	47	35	plasma	plasma	NOUN
ap-1725	47	36	will	will	AUX
ap-1725	47	37	not	not	PART
ap-1725	47	38	ignite	ignite	VERB
ap-1725	47	39	under	under	ADP
ap-1725	47	40	the	the	DET
ap-1725	47	41	influence	influence	NOUN
ap-1725	47	42	of	of	ADP
ap-1725	47	43	microwave	microwave	NOUN
ap-1725	47	44	energy	energy	NOUN
ap-1725	47	45	.	.	PUNCT
ap-1725	48	1	then	then	ADV
ap-1725	48	2	the	the	DET
ap-1725	48	3	magnetron	magnetron	ADJ
ap-1725	48	4	microwave	microwave	NOUN
ap-1725	48	5	generation	generation	NOUN
ap-1725	48	6	is	be	AUX
ap-1725	48	7	switched	switch	VERB
ap-1725	48	8	on	on	ADP
ap-1725	48	9	.	.	PUNCT
ap-1725	49	1	the	the	DET
ap-1725	49	2	wafers	wafer	NOUN
ap-1725	49	3	being	be	AUX
ap-1725	49	4	warmed	warm	VERB
ap-1725	49	5	up	up	ADP
ap-1725	49	6	for	for	ADP
ap-1725	49	7	a	a	DET
ap-1725	49	8	certain	certain	ADJ
ap-1725	49	9	time	time	NOUN
ap-1725	49	10	under	under	ADP
ap-1725	49	11	the	the	DET
ap-1725	49	12	influence	influence	NOUN
ap-1725	49	13	of	of	ADP
ap-1725	49	14	microwave	microwave	NOUN
ap-1725	49	15	energy	energy	NOUN
ap-1725	49	16	,	,	PUNCT
ap-1725	49	17	the	the	DET
ap-1725	49	18	required	require	VERB
ap-1725	49	19	pressure	pressure	NOUN
ap-1725	49	20	of	of	ADP
ap-1725	49	21	plasma	plasma	NOUN
ap-1725	49	22	forming	form	VERB
ap-1725	49	23	gas	gas	NOUN
ap-1725	49	24	is	be	AUX
ap-1725	49	25	set	set	VERB
ap-1725	49	26	,	,	PUNCT
ap-1725	49	27	which	which	PRON
ap-1725	49	28	provides	provide	VERB
ap-1725	49	29	microwave	microwave	NOUN
ap-1725	49	30	discharge	discharge	NOUN
ap-1725	49	31	excitation	excitation	NOUN
ap-1725	49	32	and	and	CCONJ
ap-1725	49	33	the	the	DET
ap-1725	49	34	microwave	microwave	NOUN
ap-1725	49	35	plasma	plasma	NOUN
ap-1725	49	36	chemical	chemical	NOUN
ap-1725	49	37	treatment	treatment	NOUN
ap-1725	49	38	process	process	NOUN
ap-1725	49	39	is	be	AUX
ap-1725	49	40	performed	perform	VERB
ap-1725	49	41	.	.	PUNCT
ap-1725	50	1	semiconductor	semiconductor	NOUN
ap-1725	50	2	wafers	wafer	NOUN
ap-1725	50	3	are	be	AUX
ap-1725	50	4	kept	keep	VERB
ap-1725	50	5	in	in	ADP
ap-1725	50	6	plasma	plasma	NOUN
ap-1725	50	7	till	till	SCONJ
ap-1725	50	8	the	the	DET
ap-1725	50	9	photoresist	photoresist	NOUN
ap-1725	50	10	is	be	AUX
ap-1725	50	11	completely	completely	ADV
ap-1725	50	12	removed	remove	VERB
ap-1725	50	13	from	from	ADP
ap-1725	50	14	their	their	PRON
ap-1725	50	15	surface	surface	NOUN
ap-1725	50	16	.	.	PUNCT
ap-1725	51	1	figures	figure	NOUN
ap-1725	51	2	1	1	NUM
ap-1725	51	3	and	and	CCONJ
ap-1725	51	4	2	2	NUM
ap-1725	51	5	show	show	VERB
ap-1725	51	6	the	the	DET
ap-1725	51	7	dependencies	dependency	NOUN
ap-1725	51	8	of	of	ADP
ap-1725	51	9	full	full	ADJ
ap-1725	51	10	cycle	cycle	NOUN
ap-1725	51	11	duration	duration	NOUN
ap-1725	51	12	(	(	PUNCT
ap-1725	51	13	microwave	microwave	NOUN
ap-1725	51	14	warming	warming	NOUN
ap-1725	51	15	up	up	ADP
ap-1725	51	16	and	and	CCONJ
ap-1725	51	17	plasma	plasma	NOUN
ap-1725	51	18	treatment	treatment	NOUN
ap-1725	51	19	)	)	PUNCT
ap-1725	51	20	and	and	CCONJ
ap-1725	51	21	the	the	DET
ap-1725	51	22	rate	rate	NOUN
ap-1725	51	23	of	of	ADP
ap-1725	51	24	photoresist	photoresist	NOUN
ap-1725	51	25	ashing	ashing	NOUN
ap-1725	51	26	from	from	ADP
ap-1725	51	27	the	the	DET
ap-1725	51	28	surface	surface	NOUN
ap-1725	51	29	of	of	ADP
ap-1725	51	30	silicon	silicon	NOUN
ap-1725	51	31	wafers	wafer	NOUN
ap-1725	51	32	calculated	calculate	VERB
ap-1725	51	33	with	with	ADP
ap-1725	51	34	respect	respect	NOUN
ap-1725	51	35	to	to	ADP
ap-1725	51	36	the	the	DET
ap-1725	51	37	total	total	ADJ
ap-1725	51	38	treatment	treatment	NOUN
ap-1725	51	39	process	process	NOUN
ap-1725	51	40	duration	duration	NOUN
ap-1725	51	41	on	on	ADP
ap-1725	51	42	the	the	DET
ap-1725	51	43	time	time	NOUN
ap-1725	51	44	of	of	ADP
ap-1725	51	45	plasma	plasma	NOUN
ap-1725	51	46	formation	formation	NOUN
ap-1725	51	47	delay	delay	NOUN
ap-1725	51	48	with	with	ADP
ap-1725	51	49	respect	respect	NOUN
ap-1725	51	50	to	to	ADP
ap-1725	51	51	the	the	DET
ap-1725	51	52	beginning	beginning	NOUN
ap-1725	51	53	of	of	ADP
ap-1725	51	54	microwave	microwave	NOUN
ap-1725	51	55	generating	generate	VERB
ap-1725	51	56	by	by	ADP
ap-1725	51	57	the	the	DET
ap-1725	51	58	magnetron	magnetron	NOUN
ap-1725	51	59	.	.	PUNCT
ap-1725	52	1	photoresist	photoresist	PROPN
ap-1725	52	2	was	be	AUX
ap-1725	52	3	ashed	ash	VERB
ap-1725	52	4	from	from	ADP
ap-1725	52	5	the	the	DET
ap-1725	52	6	surface	surface	NOUN
ap-1725	52	7	of	of	ADP
ap-1725	52	8	two	two	NUM
ap-1725	52	9	si	si	NOUN
ap-1725	52	10	wafers	wafer	NOUN
ap-1725	52	11	.	.	PUNCT
ap-1725	53	1	the	the	DET
ap-1725	53	2	presented	present	VERB
ap-1725	53	3	dependencies	dependency	NOUN
ap-1725	53	4	show	show	VERB
ap-1725	53	5	that	that	SCONJ
ap-1725	53	6	they	they	PRON
ap-1725	53	7	have	have	VERB
ap-1725	53	8	an	an	DET
ap-1725	53	9	extreme	extreme	ADJ
ap-1725	53	10	character	character	NOUN
ap-1725	53	11	.	.	PUNCT
ap-1725	54	1	we	we	PRON
ap-1725	54	2	believe	believe	VERB
ap-1725	54	3	it	it	PRON
ap-1725	54	4	may	may	AUX
ap-1725	54	5	be	be	AUX
ap-1725	54	6	connected	connect	VERB
ap-1725	54	7	with	with	ADP
ap-1725	54	8	the	the	DET
ap-1725	54	9	structural	structural	ADJ
ap-1725	54	10	changes	change	NOUN
ap-1725	54	11	going	go	VERB
ap-1725	54	12	on	on	ADP
ap-1725	54	13	in	in	ADP
ap-1725	54	14	the	the	DET
ap-1725	54	15	photoresist	photoresist	ADJ
ap-1725	54	16	film	film	NOUN
ap-1725	54	17	under	under	ADP
ap-1725	54	18	the	the	DET
ap-1725	54	19	influence	influence	NOUN
ap-1725	54	20	of	of	ADP
ap-1725	54	21	both	both	CCONJ
ap-1725	54	22	the	the	DET
ap-1725	54	23	temperature	temperature	NOUN
ap-1725	54	24	factor	factor	NOUN
ap-1725	54	25	[	[	X
ap-1725	54	26	7	7	NUM
ap-1725	54	27	,	,	PUNCT
ap-1725	54	28	13	13	NUM
ap-1725	54	29	]	]	PUNCT
ap-1725	54	30	,	,	PUNCT
ap-1725	54	31	and	and	CCONJ
ap-1725	54	32	the	the	DET
ap-1725	54	33	result	result	NOUN
ap-1725	54	34	of	of	ADP
ap-1725	54	35	processes	process	NOUN
ap-1725	54	36	caused	cause	VERB
ap-1725	54	37	by	by	ADP
ap-1725	54	38	microwave	microwave	NOUN
ap-1725	54	39	field	field	NOUN
ap-1725	54	40	[	[	X
ap-1725	54	41	11	11	NUM
ap-1725	54	42	]	]	PUNCT
ap-1725	54	43	.	.	PUNCT
ap-1725	55	1	114	114	NUM
ap-1725	55	2	vol	vol	NOUN
ap-1725	55	3	.	.	PUNCT
ap-1725	56	1	53	53	NUM
ap-1725	56	2	no	no	NOUN
ap-1725	56	3	.	.	PUNCT
ap-1725	57	1	2/2013	2/2013	NUM
ap-1725	57	2	the	the	DET
ap-1725	57	3	process	process	NOUN
ap-1725	57	4	of	of	ADP
ap-1725	57	5	plasma	plasma	NOUN
ap-1725	57	6	chemical	chemical	NOUN
ap-1725	57	7	photoresist	photoresist	NOUN
ap-1725	57	8	film	film	NOUN
ap-1725	57	9	ashing	ash	VERB
ap-1725	57	10	figure	figure	NOUN
ap-1725	57	11	1	1	NUM
ap-1725	57	12	.	.	PUNCT
ap-1725	58	1	dependence	dependence	NOUN
ap-1725	58	2	of	of	ADP
ap-1725	58	3	total	total	ADJ
ap-1725	58	4	t	t	PROPN
ap-1725	58	5	duration	duration	NOUN
ap-1725	58	6	of	of	ADP
ap-1725	58	7	photoresist	photoresist	NOUN
ap-1725	58	8	ashing	ashing	NOUN
ap-1725	58	9	from	from	ADP
ap-1725	58	10	the	the	DET
ap-1725	58	11	surface	surface	NOUN
ap-1725	58	12	of	of	ADP
ap-1725	58	13	si	si	NOUN
ap-1725	58	14	wafers	wafer	NOUN
ap-1725	58	15	on	on	ADP
ap-1725	58	16	the	the	DET
ap-1725	58	17	delay	delay	NOUN
ap-1725	58	18	time	time	PROPN
ap-1725	58	19	t	t	PROPN
ap-1725	58	20	of	of	ADP
ap-1725	58	21	the	the	DET
ap-1725	58	22	beginning	beginning	NOUN
ap-1725	58	23	of	of	ADP
ap-1725	58	24	plasma	plasma	NOUN
ap-1725	58	25	formation	formation	NOUN
ap-1725	58	26	with	with	ADP
ap-1725	58	27	respect	respect	NOUN
ap-1725	58	28	to	to	ADP
ap-1725	58	29	the	the	DET
ap-1725	58	30	beginning	beginning	NOUN
ap-1725	58	31	of	of	ADP
ap-1725	58	32	microwave	microwave	NOUN
ap-1725	58	33	energy	energy	NOUN
ap-1725	58	34	generation	generation	NOUN
ap-1725	58	35	.	.	PUNCT
ap-1725	59	1	figure	figure	NOUN
ap-1725	59	2	2	2	NUM
ap-1725	59	3	.	.	PUNCT
ap-1725	60	1	dependence	dependence	NOUN
ap-1725	60	2	of	of	ADP
ap-1725	60	3	the	the	DET
ap-1725	60	4	calculated	calculate	VERB
ap-1725	60	5	speed	speed	NOUN
ap-1725	60	6	v	v	NOUN
ap-1725	60	7	of	of	ADP
ap-1725	60	8	photoresist	photoresist	NOUN
ap-1725	60	9	ashing	ashing	NOUN
ap-1725	60	10	from	from	ADP
ap-1725	60	11	the	the	DET
ap-1725	60	12	surface	surface	NOUN
ap-1725	60	13	of	of	ADP
ap-1725	60	14	si	si	NOUN
ap-1725	60	15	wafers	wafer	NOUN
ap-1725	60	16	on	on	ADP
ap-1725	60	17	the	the	DET
ap-1725	60	18	delay	delay	NOUN
ap-1725	60	19	time	time	PROPN
ap-1725	60	20	t	t	PROPN
ap-1725	60	21	of	of	ADP
ap-1725	60	22	the	the	DET
ap-1725	60	23	beginning	beginning	NOUN
ap-1725	60	24	of	of	ADP
ap-1725	60	25	plasma	plasma	NOUN
ap-1725	60	26	formation	formation	NOUN
ap-1725	60	27	with	with	ADP
ap-1725	60	28	respect	respect	NOUN
ap-1725	60	29	to	to	ADP
ap-1725	60	30	the	the	DET
ap-1725	60	31	beginning	beginning	NOUN
ap-1725	60	32	of	of	ADP
ap-1725	60	33	microwave	microwave	NOUN
ap-1725	60	34	energy	energy	NOUN
ap-1725	60	35	generation	generation	NOUN
ap-1725	60	36	.	.	PUNCT
ap-1725	61	1	the	the	DET
ap-1725	61	2	experiments	experiment	NOUN
ap-1725	61	3	on	on	ADP
ap-1725	61	4	the	the	DET
ap-1725	61	5	investigation	investigation	NOUN
ap-1725	61	6	of	of	ADP
ap-1725	61	7	silicon	silicon	NOUN
ap-1725	61	8	wafer	wafer	NOUN
ap-1725	61	9	temperature	temperature	NOUN
ap-1725	61	10	depending	depend	VERB
ap-1725	61	11	on	on	ADP
ap-1725	61	12	the	the	DET
ap-1725	61	13	time	time	NOUN
ap-1725	61	14	of	of	ADP
ap-1725	61	15	treating	treat	VERB
ap-1725	61	16	them	they	PRON
ap-1725	61	17	under	under	ADP
ap-1725	61	18	the	the	DET
ap-1725	61	19	influence	influence	NOUN
ap-1725	61	20	of	of	ADP
ap-1725	61	21	microwave	microwave	NOUN
ap-1725	61	22	field	field	NOUN
ap-1725	61	23	(	(	PUNCT
ap-1725	61	24	fig	fig	NOUN
ap-1725	61	25	.	.	PUNCT
ap-1725	61	26	3	3	X
ap-1725	61	27	)	)	PUNCT
ap-1725	61	28	showed	show	VERB
ap-1725	61	29	,	,	PUNCT
ap-1725	61	30	that	that	SCONJ
ap-1725	61	31	in	in	ADP
ap-1725	61	32	the	the	DET
ap-1725	61	33	time	time	NOUN
ap-1725	61	34	range	range	NOUN
ap-1725	61	35	of	of	ADP
ap-1725	61	36	20	20	NUM
ap-1725	61	37	seconds	second	NOUN
ap-1725	61	38	the	the	DET
ap-1725	61	39	dependence	dependence	NOUN
ap-1725	61	40	looks	look	VERB
ap-1725	61	41	like	like	ADP
ap-1725	61	42	linear	linear	NOUN
ap-1725	61	43	.	.	PUNCT
ap-1725	62	1	according	accord	VERB
ap-1725	62	2	to	to	ADP
ap-1725	62	3	the	the	DET
ap-1725	62	4	data	datum	NOUN
ap-1725	62	5	shown	show	VERB
ap-1725	62	6	in	in	ADP
ap-1725	62	7	fig	fig	NOUN
ap-1725	62	8	.	.	PUNCT
ap-1725	63	1	3	3	NUM
ap-1725	64	1	it	it	PRON
ap-1725	64	2	is	be	AUX
ap-1725	64	3	evident	evident	ADJ
ap-1725	64	4	that	that	SCONJ
ap-1725	64	5	during	during	ADP
ap-1725	64	6	microwave	microwave	NOUN
ap-1725	64	7	warming	warming	NOUN
ap-1725	64	8	up	up	ADP
ap-1725	64	9	of	of	ADP
ap-1725	64	10	silicon	silicon	NOUN
ap-1725	64	11	wafers	wafer	NOUN
ap-1725	64	12	their	their	PRON
ap-1725	64	13	temperature	temperature	NOUN
ap-1725	64	14	reaches	reach	VERB
ap-1725	64	15	and	and	CCONJ
ap-1725	64	16	exceeds	exceed	VERB
ap-1725	64	17	the	the	DET
ap-1725	64	18	threshold	threshold	NOUN
ap-1725	64	19	working	work	VERB
ap-1725	64	20	temperature	temperature	NOUN
ap-1725	64	21	for	for	ADP
ap-1725	64	22	this	this	DET
ap-1725	64	23	type	type	NOUN
ap-1725	64	24	of	of	ADP
ap-1725	64	25	photoresist	photoresist	NOUN
ap-1725	64	26	(	(	PUNCT
ap-1725	64	27	130	130	NUM
ap-1725	64	28	÷	÷	NUM
ap-1725	64	29	140	140	NUM
ap-1725	64	30	◦	◦	NOUN
ap-1725	64	31	c	c	NOUN
ap-1725	64	32	)	)	PUNCT
ap-1725	64	33	.	.	PUNCT
ap-1725	65	1	analyzing	analyze	VERB
ap-1725	65	2	the	the	DET
ap-1725	65	3	data	datum	NOUN
ap-1725	65	4	of	of	ADP
ap-1725	65	5	figs	fig	NOUN
ap-1725	65	6	.	.	PUNCT
ap-1725	66	1	2	2	NUM
ap-1725	66	2	and	and	CCONJ
ap-1725	66	3	3	3	NUM
ap-1725	66	4	it	it	PRON
ap-1725	66	5	is	be	AUX
ap-1725	66	6	possible	possible	ADJ
ap-1725	66	7	to	to	PART
ap-1725	66	8	make	make	VERB
ap-1725	66	9	a	a	DET
ap-1725	66	10	conclusion	conclusion	NOUN
ap-1725	66	11	that	that	SCONJ
ap-1725	66	12	with	with	ADP
ap-1725	66	13	respect	respect	NOUN
ap-1725	66	14	to	to	ADP
ap-1725	66	15	the	the	DET
ap-1725	66	16	conditions	condition	NOUN
ap-1725	66	17	of	of	ADP
ap-1725	66	18	the	the	DET
ap-1725	66	19	experiment	experiment	NOUN
ap-1725	66	20	after	after	ADP
ap-1725	66	21	15	15	NUM
ap-1725	66	22	s	s	NOUN
ap-1725	66	23	of	of	ADP
ap-1725	66	24	microwave	microwave	NOUN
ap-1725	66	25	energy	energy	NOUN
ap-1725	66	26	application	application	NOUN
ap-1725	66	27	,	,	PUNCT
ap-1725	66	28	structural	structural	ADJ
ap-1725	66	29	changes	change	NOUN
ap-1725	66	30	in	in	ADP
ap-1725	66	31	the	the	DET
ap-1725	66	32	photoresist	photoresist	ADJ
ap-1725	66	33	film	film	NOUN
ap-1725	66	34	may	may	AUX
ap-1725	66	35	take	take	VERB
ap-1725	66	36	place	place	NOUN
ap-1725	66	37	.	.	PUNCT
ap-1725	67	1	it	it	PRON
ap-1725	67	2	results	result	VERB
ap-1725	67	3	in	in	ADP
ap-1725	67	4	the	the	DET
ap-1725	67	5	increase	increase	NOUN
ap-1725	67	6	of	of	ADP
ap-1725	67	7	film	film	NOUN
ap-1725	67	8	resistivity	resistivity	NOUN
ap-1725	67	9	to	to	ADP
ap-1725	67	10	the	the	DET
ap-1725	67	11	process	process	NOUN
ap-1725	67	12	of	of	ADP
ap-1725	67	13	plasma	plasma	NOUN
ap-1725	67	14	destruction	destruction	NOUN
ap-1725	67	15	[	[	X
ap-1725	67	16	2	2	NUM
ap-1725	67	17	]	]	PUNCT
ap-1725	67	18	and	and	CCONJ
ap-1725	67	19	,	,	PUNCT
ap-1725	67	20	consequently	consequently	ADV
ap-1725	67	21	,	,	PUNCT
ap-1725	67	22	to	to	ADP
ap-1725	67	23	the	the	DET
ap-1725	67	24	reduction	reduction	NOUN
ap-1725	67	25	of	of	ADP
ap-1725	67	26	plasma	plasma	NOUN
ap-1725	67	27	chemical	chemical	NOUN
ap-1725	67	28	photoresist	photoresist	NOUN
ap-1725	67	29	ashing	ashing	NOUN
ap-1725	67	30	rate	rate	NOUN
ap-1725	67	31	.	.	PUNCT
ap-1725	68	1	in	in	ADP
ap-1725	68	2	order	order	NOUN
ap-1725	68	3	to	to	PART
ap-1725	68	4	define	define	VERB
ap-1725	68	5	the	the	DET
ap-1725	68	6	rule	rule	NOUN
ap-1725	68	7	of	of	ADP
ap-1725	68	8	revealing	reveal	VERB
ap-1725	68	9	the	the	DET
ap-1725	68	10	process	process	NOUN
ap-1725	68	11	acceleration	acceleration	NOUN
ap-1725	68	12	effect	effect	NOUN
ap-1725	68	13	in	in	ADP
ap-1725	68	14	case	case	NOUN
ap-1725	68	15	of	of	ADP
ap-1725	68	16	preliminary	preliminary	ADJ
ap-1725	68	17	microwave	microwave	NOUN
ap-1725	68	18	warming	warming	NOUN
ap-1725	68	19	up	up	ADP
ap-1725	68	20	of	of	ADP
ap-1725	68	21	si	si	NOUN
ap-1725	68	22	wafers	wafer	NOUN
ap-1725	68	23	,	,	PUNCT
ap-1725	68	24	a	a	DET
ap-1725	68	25	series	series	NOUN
ap-1725	68	26	of	of	ADP
ap-1725	68	27	experiments	experiment	NOUN
ap-1725	68	28	was	be	AUX
ap-1725	68	29	carried	carry	VERB
ap-1725	68	30	out	out	ADP
ap-1725	68	31	to	to	PART
ap-1725	68	32	investigate	investigate	VERB
ap-1725	68	33	the	the	DET
ap-1725	68	34	“	"	PUNCT
ap-1725	68	35	loading	loading	NOUN
ap-1725	68	36	”	"	PUNCT
ap-1725	68	37	effect	effect	NOUN
ap-1725	68	38	with	with	ADP
ap-1725	68	39	reference	reference	NOUN
ap-1725	68	40	to	to	ADP
ap-1725	68	41	the	the	DET
ap-1725	68	42	conditions	condition	NOUN
ap-1725	68	43	of	of	ADP
ap-1725	68	44	treatment	treatment	NOUN
ap-1725	68	45	under	under	ADP
ap-1725	68	46	investigation	investigation	NOUN
ap-1725	68	47	.	.	PUNCT
ap-1725	69	1	the	the	DET
ap-1725	69	2	experiments	experiment	NOUN
ap-1725	69	3	were	be	AUX
ap-1725	69	4	carried	carry	VERB
ap-1725	69	5	out	out	ADP
ap-1725	69	6	loading	load	VERB
ap-1725	69	7	2	2	NUM
ap-1725	69	8	,	,	PUNCT
ap-1725	69	9	5	5	NUM
ap-1725	69	10	,	,	PUNCT
ap-1725	69	11	10	10	NUM
ap-1725	69	12	and	and	CCONJ
ap-1725	69	13	15	15	NUM
ap-1725	69	14	wafers	wafer	NOUN
ap-1725	69	15	into	into	ADP
ap-1725	69	16	the	the	DET
ap-1725	69	17	reaction	reaction	NOUN
ap-1725	69	18	discharge	discharge	NOUN
ap-1725	69	19	chamber	chamber	NOUN
ap-1725	69	20	.	.	PUNCT
ap-1725	70	1	the	the	DET
ap-1725	70	2	delay	delay	NOUN
ap-1725	70	3	of	of	ADP
ap-1725	70	4	plasma	plasma	NOUN
ap-1725	70	5	formation	formation	NOUN
ap-1725	70	6	with	with	ADP
ap-1725	70	7	refigure	refigure	NOUN
ap-1725	70	8	3	3	NUM
ap-1725	70	9	.	.	PUNCT
ap-1725	70	10	temperature	temperature	NOUN
ap-1725	70	11	of	of	ADP
ap-1725	70	12	si	si	NOUN
ap-1725	70	13	wafers	wafer	NOUN
ap-1725	70	14	θ	θ	NOUN
ap-1725	70	15	depending	depend	VERB
ap-1725	70	16	on	on	ADP
ap-1725	70	17	the	the	DET
ap-1725	70	18	time	time	NOUN
ap-1725	70	19	t	t	PROPN
ap-1725	70	20	of	of	ADP
ap-1725	70	21	their	their	PRON
ap-1725	70	22	warming	warming	NOUN
ap-1725	70	23	up	up	ADP
ap-1725	70	24	under	under	ADP
ap-1725	70	25	the	the	DET
ap-1725	70	26	influence	influence	NOUN
ap-1725	70	27	of	of	ADP
ap-1725	70	28	microwave	microwave	NOUN
ap-1725	70	29	energy	energy	NOUN
ap-1725	70	30	.	.	PUNCT
ap-1725	71	1	figure	figure	NOUN
ap-1725	71	2	4	4	NUM
ap-1725	71	3	.	.	PUNCT
ap-1725	71	4	rate	rate	NOUN
ap-1725	71	5	of	of	ADP
ap-1725	71	6	photoresist	photoresist	ADJ
ap-1725	71	7	film	film	NOUN
ap-1725	71	8	ashing	ashing	NOUN
ap-1725	71	9	from	from	ADP
ap-1725	71	10	the	the	DET
ap-1725	71	11	surface	surface	NOUN
ap-1725	71	12	of	of	ADP
ap-1725	71	13	si	si	NOUN
ap-1725	71	14	wafers	wafer	NOUN
ap-1725	71	15	depending	depend	VERB
ap-1725	71	16	on	on	ADP
ap-1725	71	17	the	the	DET
ap-1725	71	18	number	number	NOUN
ap-1725	71	19	of	of	ADP
ap-1725	71	20	si	si	NOUN
ap-1725	71	21	wafers	wafer	NOUN
ap-1725	71	22	in	in	ADP
ap-1725	71	23	the	the	DET
ap-1725	71	24	reactor	reactor	NOUN
ap-1725	71	25	(	(	PUNCT
ap-1725	71	26	the	the	DET
ap-1725	71	27	delay	delay	NOUN
ap-1725	71	28	duration	duration	NOUN
ap-1725	71	29	of	of	ADP
ap-1725	71	30	the	the	DET
ap-1725	71	31	beginning	beginning	NOUN
ap-1725	71	32	of	of	ADP
ap-1725	71	33	plasma	plasma	NOUN
ap-1725	71	34	formation	formation	NOUN
ap-1725	71	35	with	with	ADP
ap-1725	71	36	respect	respect	NOUN
ap-1725	71	37	to	to	ADP
ap-1725	71	38	the	the	DET
ap-1725	71	39	beginning	beginning	NOUN
ap-1725	71	40	of	of	ADP
ap-1725	71	41	microwave	microwave	NOUN
ap-1725	71	42	energy	energy	NOUN
ap-1725	71	43	generation	generation	NOUN
ap-1725	71	44	t	t	NOUN
ap-1725	71	45	=	=	PUNCT
ap-1725	71	46	15	15	NUM
ap-1725	71	47	s	s	NOUN
ap-1725	71	48	)	)	PUNCT
ap-1725	71	49	.	.	PUNCT
ap-1725	72	1	spect	spect	PROPN
ap-1725	72	2	to	to	ADP
ap-1725	72	3	the	the	DET
ap-1725	72	4	beginning	beginning	NOUN
ap-1725	72	5	of	of	ADP
ap-1725	72	6	microwave	microwave	NOUN
ap-1725	72	7	generation	generation	NOUN
ap-1725	72	8	in	in	ADP
ap-1725	72	9	accordance	accordance	NOUN
ap-1725	72	10	with	with	ADP
ap-1725	72	11	the	the	DET
ap-1725	72	12	data	datum	NOUN
ap-1725	72	13	of	of	ADP
ap-1725	72	14	fig	fig	NOUN
ap-1725	72	15	.	.	PUNCT
ap-1725	73	1	2	2	NUM
ap-1725	73	2	was	be	AUX
ap-1725	73	3	chosen	choose	VERB
ap-1725	73	4	equal	equal	ADJ
ap-1725	73	5	to	to	ADP
ap-1725	73	6	15	15	NUM
ap-1725	73	7	seconds	second	NOUN
ap-1725	73	8	.	.	PUNCT
ap-1725	74	1	figure	figure	NOUN
ap-1725	74	2	4	4	NUM
ap-1725	74	3	shows	show	VERB
ap-1725	74	4	the	the	DET
ap-1725	74	5	data	datum	NOUN
ap-1725	74	6	on	on	ADP
ap-1725	74	7	the	the	DET
ap-1725	74	8	rate	rate	NOUN
ap-1725	74	9	of	of	ADP
ap-1725	74	10	photoresist	photoresist	NOUN
ap-1725	74	11	ashing	ashing	NOUN
ap-1725	74	12	from	from	ADP
ap-1725	74	13	the	the	DET
ap-1725	74	14	surface	surface	NOUN
ap-1725	74	15	of	of	ADP
ap-1725	74	16	si	si	NOUN
ap-1725	74	17	wafers	wafer	NOUN
ap-1725	74	18	depending	depend	VERB
ap-1725	74	19	on	on	ADP
ap-1725	74	20	the	the	DET
ap-1725	74	21	quantity	quantity	NOUN
ap-1725	74	22	of	of	ADP
ap-1725	74	23	si	si	NOUN
ap-1725	74	24	wafers	wafer	NOUN
ap-1725	74	25	in	in	ADP
ap-1725	74	26	the	the	DET
ap-1725	74	27	reaction	reaction	NOUN
ap-1725	74	28	discharge	discharge	NOUN
ap-1725	74	29	chamber	chamber	NOUN
ap-1725	74	30	.	.	PUNCT
ap-1725	75	1	analyzing	analyze	VERB
ap-1725	75	2	the	the	DET
ap-1725	75	3	obtained	obtain	VERB
ap-1725	75	4	data	datum	NOUN
ap-1725	75	5	and	and	CCONJ
ap-1725	75	6	the	the	DET
ap-1725	75	7	data	datum	NOUN
ap-1725	75	8	given	give	VERB
ap-1725	75	9	in	in	ADP
ap-1725	75	10	[	[	X
ap-1725	75	11	5	5	NUM
ap-1725	75	12	]	]	PUNCT
ap-1725	75	13	,	,	PUNCT
ap-1725	75	14	we	we	PRON
ap-1725	75	15	can	can	AUX
ap-1725	75	16	arrive	arrive	VERB
ap-1725	75	17	at	at	ADP
ap-1725	75	18	the	the	DET
ap-1725	75	19	conclusion	conclusion	NOUN
ap-1725	75	20	that	that	SCONJ
ap-1725	75	21	the	the	DET
ap-1725	75	22	character	character	NOUN
ap-1725	75	23	of	of	ADP
ap-1725	75	24	“	"	PUNCT
ap-1725	75	25	loading	loading	NOUN
ap-1725	75	26	”	"	PUNCT
ap-1725	75	27	effect	effect	NOUN
ap-1725	75	28	in	in	ADP
ap-1725	75	29	case	case	NOUN
ap-1725	75	30	of	of	ADP
ap-1725	75	31	two	two	NUM
ap-1725	75	32	stage	stage	NOUN
ap-1725	75	33	treatment	treatment	NOUN
ap-1725	75	34	is	be	AUX
ap-1725	75	35	analogous	analogous	ADJ
ap-1725	75	36	to	to	ADP
ap-1725	75	37	the	the	DET
ap-1725	75	38	classical	classical	ADJ
ap-1725	75	39	microwave	microwave	NOUN
ap-1725	75	40	plasma	plasma	NOUN
ap-1725	75	41	chemical	chemical	NOUN
ap-1725	75	42	treatment	treatment	NOUN
ap-1725	75	43	.	.	PUNCT
ap-1725	76	1	we	we	PRON
ap-1725	76	2	suppose	suppose	VERB
ap-1725	76	3	in	in	ADP
ap-1725	76	4	both	both	DET
ap-1725	76	5	cases	case	NOUN
ap-1725	76	6	the	the	DET
ap-1725	76	7	process	process	NOUN
ap-1725	76	8	of	of	ADP
ap-1725	76	9	photoresist	photoresist	ADJ
ap-1725	76	10	film	film	NOUN
ap-1725	76	11	ashing	ashing	NOUN
ap-1725	76	12	takes	take	VERB
ap-1725	76	13	place	place	NOUN
ap-1725	76	14	in	in	ADP
ap-1725	76	15	accordance	accordance	NOUN
ap-1725	76	16	with	with	ADP
ap-1725	76	17	the	the	DET
ap-1725	76	18	same	same	ADJ
ap-1725	76	19	mechanism	mechanism	NOUN
ap-1725	76	20	but	but	CCONJ
ap-1725	76	21	with	with	ADP
ap-1725	76	22	a	a	DET
ap-1725	76	23	higher	high	ADJ
ap-1725	76	24	(	(	PUNCT
ap-1725	76	25	up	up	ADP
ap-1725	76	26	to	to	PART
ap-1725	76	27	1.7	1.7	NUM
ap-1725	76	28	times	time	NOUN
ap-1725	76	29	)	)	PUNCT
ap-1725	76	30	rate	rate	NOUN
ap-1725	76	31	in	in	ADP
ap-1725	76	32	case	case	NOUN
ap-1725	76	33	of	of	ADP
ap-1725	76	34	preliminary	preliminary	ADJ
ap-1725	76	35	activation	activation	NOUN
ap-1725	76	36	owing	owe	VERB
ap-1725	76	37	to	to	ADP
ap-1725	76	38	the	the	DET
ap-1725	76	39	microwave	microwave	NOUN
ap-1725	76	40	warming	warming	NOUN
ap-1725	76	41	up	up	ADP
ap-1725	76	42	.	.	PUNCT
ap-1725	77	1	the	the	DET
ap-1725	77	2	experimental	experimental	ADJ
ap-1725	77	3	data	datum	NOUN
ap-1725	77	4	on	on	ADP
ap-1725	77	5	the	the	DET
ap-1725	77	6	investigation	investigation	NOUN
ap-1725	77	7	of	of	ADP
ap-1725	77	8	dependence	dependence	NOUN
ap-1725	77	9	of	of	ADP
ap-1725	77	10	the	the	DET
ap-1725	77	11	rate	rate	NOUN
ap-1725	77	12	of	of	ADP
ap-1725	77	13	plasma	plasma	NOUN
ap-1725	77	14	chemical	chemical	NOUN
ap-1725	77	15	photoresist	photoresist	NOUN
ap-1725	77	16	film	film	NOUN
ap-1725	77	17	ashing	ashing	NOUN
ap-1725	77	18	from	from	ADP
ap-1725	77	19	the	the	DET
ap-1725	77	20	surface	surface	NOUN
ap-1725	77	21	of	of	ADP
ap-1725	77	22	si	si	NOUN
ap-1725	77	23	wafers	wafer	NOUN
ap-1725	77	24	on	on	ADP
ap-1725	77	25	the	the	DET
ap-1725	77	26	pressure	pressure	NOUN
ap-1725	77	27	of	of	ADP
ap-1725	77	28	o2	o2	PROPN
ap-1725	77	29	in	in	ADP
ap-1725	77	30	the	the	DET
ap-1725	77	31	reaction	reaction	NOUN
ap-1725	77	32	discharge	discharge	NOUN
ap-1725	77	33	chamber	chamber	NOUN
ap-1725	77	34	is	be	AUX
ap-1725	77	35	shown	show	VERB
ap-1725	77	36	in	in	ADP
ap-1725	77	37	fig	fig	NOUN
ap-1725	77	38	.	.	PUNCT
ap-1725	78	1	5	5	X
ap-1725	78	2	.	.	X
ap-1725	78	3	figure	figure	NOUN
ap-1725	78	4	5	5	NUM
ap-1725	78	5	shows	show	VERB
ap-1725	78	6	that	that	SCONJ
ap-1725	78	7	the	the	DET
ap-1725	78	8	investigated	investigate	VERB
ap-1725	78	9	two	two	NUM
ap-1725	78	10	-	-	PUNCT
ap-1725	78	11	stage	stage	NOUN
ap-1725	78	12	process	process	NOUN
ap-1725	78	13	of	of	ADP
ap-1725	78	14	microwave	microwave	NOUN
ap-1725	78	15	plasma	plasma	NOUN
ap-1725	78	16	chemical	chemical	NOUN
ap-1725	78	17	photoresist	photoresist	NOUN
ap-1725	78	18	film	film	NOUN
ap-1725	78	19	ashing	ashing	NOUN
ap-1725	78	20	is	be	AUX
ap-1725	78	21	characterized	characterize	VERB
ap-1725	78	22	by	by	ADP
ap-1725	78	23	the	the	DET
ap-1725	78	24	presence	presence	NOUN
ap-1725	78	25	of	of	ADP
ap-1725	78	26	an	an	DET
ap-1725	78	27	evident	evident	ADJ
ap-1725	78	28	extreme	extreme	ADJ
ap-1725	78	29	value	value	NOUN
ap-1725	78	30	of	of	ADP
ap-1725	78	31	photoresist	photoresist	ADJ
ap-1725	78	32	film	film	NOUN
ap-1725	78	33	ashing	ashing	NOUN
ap-1725	78	34	rate	rate	NOUN
ap-1725	78	35	in	in	ADP
ap-1725	78	36	the	the	DET
ap-1725	78	37	range	range	NOUN
ap-1725	78	38	of	of	ADP
ap-1725	78	39	o2	o2	ADJ
ap-1725	78	40	pressure	pressure	NOUN
ap-1725	78	41	which	which	PRON
ap-1725	78	42	qualitatively	qualitatively	ADV
ap-1725	78	43	coincides	coincide	VERB
ap-1725	78	44	with	with	ADP
ap-1725	78	45	the	the	DET
ap-1725	78	46	analogous	analogous	ADJ
ap-1725	78	47	dependence	dependence	NOUN
ap-1725	78	48	obtained	obtain	VERB
ap-1725	78	49	in	in	ADP
ap-1725	78	50	[	[	X
ap-1725	78	51	5	5	NUM
ap-1725	78	52	]	]	PUNCT
ap-1725	78	53	.	.	PUNCT
ap-1725	79	1	115	115	NUM
ap-1725	79	2	siarhei	siarhei	PROPN
ap-1725	79	3	bordusau	bordusau	PROPN
ap-1725	79	4	,	,	PUNCT
ap-1725	79	5	siarhei	siarhei	PROPN
ap-1725	79	6	madveika	madveika	NOUN
ap-1725	79	7	,	,	PUNCT
ap-1725	79	8	anatolii	anatolii	VERB
ap-1725	79	9	dostanko	dostanko	PROPN
ap-1725	79	10	acta	acta	PROPN
ap-1725	79	11	polytechnica	polytechnica	PROPN
ap-1725	79	12	figure	figure	NOUN
ap-1725	79	13	5	5	NUM
ap-1725	79	14	.	.	PUNCT
ap-1725	80	1	rate	rate	NOUN
ap-1725	80	2	values	value	NOUN
ap-1725	80	3	of	of	ADP
ap-1725	80	4	photoresist	photoresist	ADJ
ap-1725	80	5	film	film	NOUN
ap-1725	80	6	ashing	ashing	NOUN
ap-1725	80	7	from	from	ADP
ap-1725	80	8	the	the	DET
ap-1725	80	9	surface	surface	NOUN
ap-1725	80	10	of	of	ADP
ap-1725	80	11	two	two	NUM
ap-1725	80	12	silicon	silicon	NOUN
ap-1725	80	13	wafers	wafer	NOUN
ap-1725	80	14	depending	depend	VERB
ap-1725	80	15	on	on	ADP
ap-1725	80	16	the	the	DET
ap-1725	80	17	pressure	pressure	NOUN
ap-1725	80	18	o2	o2	NOUN
ap-1725	80	19	(	(	PUNCT
ap-1725	80	20	the	the	DET
ap-1725	80	21	delay	delay	NOUN
ap-1725	80	22	duration	duration	NOUN
ap-1725	80	23	of	of	ADP
ap-1725	80	24	the	the	DET
ap-1725	80	25	beginning	beginning	NOUN
ap-1725	80	26	of	of	ADP
ap-1725	80	27	plasma	plasma	NOUN
ap-1725	80	28	formation	formation	NOUN
ap-1725	80	29	with	with	ADP
ap-1725	80	30	respect	respect	NOUN
ap-1725	80	31	to	to	ADP
ap-1725	80	32	the	the	DET
ap-1725	80	33	beginning	beginning	NOUN
ap-1725	80	34	of	of	ADP
ap-1725	80	35	microwave	microwave	NOUN
ap-1725	80	36	energy	energy	NOUN
ap-1725	80	37	generation	generation	NOUN
ap-1725	80	38	t	t	NOUN
ap-1725	80	39	=	=	PUNCT
ap-1725	80	40	15	15	NUM
ap-1725	80	41	s	s	NOUN
ap-1725	80	42	)	)	PUNCT
ap-1725	80	43	.	.	PUNCT
ap-1725	81	1	these	these	DET
ap-1725	81	2	results	result	NOUN
ap-1725	81	3	can	can	AUX
ap-1725	81	4	also	also	ADV
ap-1725	81	5	confirm	confirm	VERB
ap-1725	81	6	the	the	DET
ap-1725	81	7	conclusion	conclusion	NOUN
ap-1725	81	8	about	about	ADP
ap-1725	81	9	the	the	DET
ap-1725	81	10	identity	identity	NOUN
ap-1725	81	11	of	of	ADP
ap-1725	81	12	microwave	microwave	NOUN
ap-1725	81	13	plasma	plasma	NOUN
ap-1725	81	14	chemical	chemical	NOUN
ap-1725	81	15	photoresist	photoresist	NOUN
ap-1725	81	16	film	film	NOUN
ap-1725	81	17	coating	coating	NOUN
ap-1725	81	18	processes	process	NOUN
ap-1725	81	19	’	'	PUNCT
ap-1725	81	20	mechanisms	mechanism	NOUN
ap-1725	81	21	for	for	ADP
ap-1725	81	22	the	the	DET
ap-1725	81	23	studied	study	VERB
ap-1725	81	24	two	two	NUM
ap-1725	81	25	-	-	PUNCT
ap-1725	81	26	stage	stage	NOUN
ap-1725	81	27	method	method	NOUN
ap-1725	81	28	of	of	ADP
ap-1725	81	29	microwave	microwave	NOUN
ap-1725	81	30	treatment	treatment	NOUN
ap-1725	81	31	and	and	CCONJ
ap-1725	81	32	a	a	DET
ap-1725	81	33	standard	standard	ADJ
ap-1725	81	34	single	single	ADJ
ap-1725	81	35	stage	stage	NOUN
ap-1725	81	36	process	process	NOUN
ap-1725	81	37	.	.	PUNCT
ap-1725	82	1	4	4	X
ap-1725	82	2	.	.	X
ap-1725	82	3	conclusions	conclusion	NOUN
ap-1725	82	4	the	the	DET
ap-1725	82	5	performed	perform	VERB
ap-1725	82	6	experimental	experimental	ADJ
ap-1725	82	7	investigation	investigation	NOUN
ap-1725	82	8	shows	show	VERB
ap-1725	82	9	that	that	SCONJ
ap-1725	82	10	microwave	microwave	NOUN
ap-1725	82	11	energy	energy	NOUN
ap-1725	82	12	can	can	AUX
ap-1725	82	13	be	be	AUX
ap-1725	82	14	successfully	successfully	ADV
ap-1725	82	15	employed	employ	VERB
ap-1725	82	16	for	for	ADP
ap-1725	82	17	intensifying	intensify	VERB
ap-1725	82	18	plasma	plasma	NOUN
ap-1725	82	19	chemical	chemical	NOUN
ap-1725	82	20	processes	process	NOUN
ap-1725	82	21	running	run	VERB
ap-1725	82	22	at	at	ADP
ap-1725	82	23	plasma	plasma	NOUN
ap-1725	82	24	chemical	chemical	NOUN
ap-1725	82	25	photoresist	photoresist	NOUN
ap-1725	82	26	film	film	NOUN
ap-1725	82	27	coating	coat	VERB
ap-1725	82	28	ashing	ashing	NOUN
ap-1725	82	29	during	during	ADP
ap-1725	82	30	the	the	DET
ap-1725	82	31	production	production	NOUN
ap-1725	82	32	of	of	ADP
ap-1725	82	33	electronic	electronic	ADJ
ap-1725	82	34	devices	device	NOUN
ap-1725	82	35	.	.	PUNCT
ap-1725	83	1	the	the	DET
ap-1725	83	2	effect	effect	NOUN
ap-1725	83	3	of	of	ADP
ap-1725	83	4	acceleration	acceleration	NOUN
ap-1725	83	5	the	the	DET
ap-1725	83	6	treatment	treatment	NOUN
ap-1725	83	7	is	be	AUX
ap-1725	83	8	achieved	achieve	VERB
ap-1725	83	9	by	by	ADP
ap-1725	83	10	absorption	absorption	NOUN
ap-1725	83	11	of	of	ADP
ap-1725	83	12	microwave	microwave	NOUN
ap-1725	83	13	energy	energy	NOUN
ap-1725	83	14	in	in	ADP
ap-1725	83	15	silicon	silicon	NOUN
ap-1725	83	16	plates	plate	NOUN
ap-1725	83	17	and	and	CCONJ
ap-1725	83	18	their	their	PRON
ap-1725	83	19	heating	heating	NOUN
ap-1725	83	20	during	during	ADP
ap-1725	83	21	processing	processing	NOUN
ap-1725	83	22	without	without	ADP
ap-1725	83	23	plasma	plasma	NOUN
ap-1725	83	24	.	.	PUNCT
ap-1725	84	1	the	the	DET
ap-1725	84	2	advantage	advantage	NOUN
ap-1725	84	3	of	of	ADP
ap-1725	84	4	such	such	ADJ
ap-1725	84	5	microwave	microwave	NOUN
ap-1725	84	6	plasma	plasma	NOUN
ap-1725	84	7	chemical	chemical	NOUN
ap-1725	84	8	treatment	treatment	NOUN
ap-1725	84	9	of	of	ADP
ap-1725	84	10	semiconductor	semiconductor	NOUN
ap-1725	84	11	wafers	wafer	NOUN
ap-1725	84	12	is	be	AUX
ap-1725	84	13	the	the	DET
ap-1725	84	14	possibility	possibility	NOUN
ap-1725	84	15	of	of	ADP
ap-1725	84	16	a	a	DET
ap-1725	84	17	significant	significant	ADJ
ap-1725	84	18	reduction	reduction	NOUN
ap-1725	84	19	of	of	ADP
ap-1725	84	20	the	the	DET
ap-1725	84	21	process	process	NOUN
ap-1725	84	22	duration	duration	NOUN
ap-1725	84	23	without	without	ADP
ap-1725	84	24	changing	change	VERB
ap-1725	84	25	the	the	DET
ap-1725	84	26	construction	construction	NOUN
ap-1725	84	27	of	of	ADP
ap-1725	84	28	microwave	microwave	NOUN
ap-1725	84	29	discharge	discharge	NOUN
ap-1725	84	30	module	module	NOUN
ap-1725	84	31	for	for	ADP
ap-1725	84	32	technological	technological	ADJ
ap-1725	84	33	application	application	NOUN
ap-1725	84	34	and	and	CCONJ
ap-1725	84	35	without	without	ADP
ap-1725	84	36	increasing	increase	VERB
ap-1725	84	37	the	the	DET
ap-1725	84	38	microwave	microwave	NOUN
ap-1725	84	39	power	power	NOUN
ap-1725	84	40	supplied	supply	VERB
ap-1725	84	41	to	to	ADP
ap-1725	84	42	the	the	DET
ap-1725	84	43	discharge	discharge	NOUN
ap-1725	84	44	.	.	PUNCT
ap-1725	85	1	references	reference	NOUN
ap-1725	85	2	[	[	X
ap-1725	85	3	1	1	NUM
ap-1725	85	4	]	]	PUNCT
ap-1725	85	5	c.	c.	PROPN
ap-1725	85	6	boisse	boisse	PROPN
ap-1725	85	7	-	-	NOUN
ap-1725	85	8	laporte	laporte	NOUN
ap-1725	85	9	,	,	PUNCT
ap-1725	85	10	j.	j.	PROPN
ap-1725	85	11	marec	marec	PROPN
ap-1725	85	12	(	(	PUNCT
ap-1725	85	13	eds	ed	NOUN
ap-1725	85	14	.	.	PUNCT
ap-1725	85	15	)	)	PUNCT
ap-1725	85	16	.	.	PUNCT
ap-1725	86	1	microwave	microwave	NOUN
ap-1725	86	2	discharges	discharge	NOUN
ap-1725	86	3	:	:	PUNCT
ap-1725	86	4	fundamentals	fundamental	NOUN
ap-1725	86	5	and	and	CCONJ
ap-1725	86	6	applications	application	NOUN
ap-1725	86	7	.	.	PUNCT
ap-1725	87	1	3rd	3rd	ADJ
ap-1725	87	2	international	international	ADJ
ap-1725	87	3	workshop	workshop	NOUN
ap-1725	87	4	,	,	PUNCT
ap-1725	87	5	abbaye	abbaye	PROPN
ap-1725	87	6	royale	royale	PROPN
ap-1725	87	7	de	de	PROPN
ap-1725	87	8	fontevraud	fontevraud	PROPN
ap-1725	87	9	,	,	PUNCT
ap-1725	87	10	20	20	NUM
ap-1725	87	11	–	–	PUNCT
ap-1725	87	12	25	25	NUM
ap-1725	87	13	april	april	PROPN
ap-1725	87	14	,	,	PUNCT
ap-1725	87	15	1997	1997	NUM
ap-1725	87	16	.	.	PUNCT
ap-1725	88	1	les	les	PROPN
ap-1725	88	2	ulis	ulis	PROPN
ap-1725	88	3	,	,	PUNCT
ap-1725	88	4	france	france	PROPN
ap-1725	88	5	,	,	PUNCT
ap-1725	88	6	1998	1998	NUM
ap-1725	88	7	.	.	PUNCT
ap-1725	89	1	[	[	X
ap-1725	89	2	2	2	X
ap-1725	89	3	]	]	PUNCT
ap-1725	89	4	s.	s.	PROPN
ap-1725	89	5	v.	v.	PROPN
ap-1725	89	6	bordusov	bordusov	PROPN
ap-1725	89	7	.	.	PUNCT
ap-1725	90	1	influence	influence	NOUN
ap-1725	90	2	of	of	ADP
ap-1725	90	3	the	the	DET
ap-1725	90	4	microwave	microwave	NOUN
ap-1725	90	5	plasma	plasma	NOUN
ap-1725	90	6	processing	processing	NOUN
ap-1725	90	7	on	on	ADP
ap-1725	90	8	the	the	DET
ap-1725	90	9	photoresist	photoresist	ADJ
ap-1725	90	10	material	material	NOUN
ap-1725	90	11	.	.	PUNCT
ap-1725	91	1	electronic	electronic	ADJ
ap-1725	91	2	materials	material	NOUN
ap-1725	91	3	processing	processing	NOUN
ap-1725	91	4	5(217):78–80	5(217):78–80	PROPN
ap-1725	91	5	,	,	PUNCT
ap-1725	91	6	2002	2002	NUM
ap-1725	91	7	.	.	PUNCT
ap-1725	92	1	[	[	X
ap-1725	92	2	3	3	X
ap-1725	92	3	]	]	X
ap-1725	92	4	s.	s.	PROPN
ap-1725	92	5	v.	v.	PROPN
ap-1725	92	6	bordusov	bordusov	PROPN
ap-1725	92	7	.	.	PUNCT
ap-1725	93	1	microwave	microwave	NOUN
ap-1725	93	2	plasma	plasma	NOUN
ap-1725	93	3	technologies	technology	NOUN
ap-1725	93	4	in	in	ADP
ap-1725	93	5	the	the	DET
ap-1725	93	6	productions	production	NOUN
ap-1725	93	7	of	of	ADP
ap-1725	93	8	electronic	electronic	ADJ
ap-1725	93	9	devices	device	NOUN
ap-1725	93	10	.	.	PUNCT
ap-1725	94	1	bestprint	bestprint	NOUN
ap-1725	94	2	,	,	PUNCT
ap-1725	94	3	minsk	minsk	PROPN
ap-1725	94	4	,	,	PUNCT
ap-1725	94	5	2002	2002	NUM
ap-1725	94	6	.	.	PUNCT
ap-1725	95	1	edited	edit	VERB
ap-1725	95	2	by	by	ADP
ap-1725	95	3	a.p	a.p	PROPN
ap-1725	95	4	.	.	PROPN
ap-1725	95	5	dostanko	dostanko	PROPN
ap-1725	95	6	.	.	PUNCT
ap-1725	96	1	[	[	X
ap-1725	96	2	4	4	X
ap-1725	96	3	]	]	PUNCT
ap-1725	96	4	s.	s.	PROPN
ap-1725	96	5	v.	v.	PROPN
ap-1725	96	6	bordusov	bordusov	PROPN
ap-1725	96	7	,	,	PUNCT
ap-1725	96	8	s.	s.	PROPN
ap-1725	96	9	i.	i.	PROPN
ap-1725	96	10	madveyko	madveyko	PROPN
ap-1725	96	11	.	.	PUNCT
ap-1725	97	1	investigation	investigation	NOUN
ap-1725	97	2	of	of	ADP
ap-1725	97	3	the	the	DET
ap-1725	97	4	influence	influence	NOUN
ap-1725	97	5	of	of	ADP
ap-1725	97	6	the	the	DET
ap-1725	97	7	effect	effect	NOUN
ap-1725	97	8	of	of	ADP
ap-1725	97	9	“	"	PUNCT
ap-1725	97	10	loading	loading	NOUN
ap-1725	97	11	”	"	PUNCT
ap-1725	97	12	the	the	DET
ap-1725	97	13	discharge	discharge	NOUN
ap-1725	97	14	chamber	chamber	NOUN
ap-1725	97	15	on	on	ADP
ap-1725	97	16	the	the	DET
ap-1725	97	17	optical	optical	ADJ
ap-1725	97	18	characteristics	characteristic	NOUN
ap-1725	97	19	of	of	ADP
ap-1725	97	20	the	the	DET
ap-1725	97	21	microwave	microwave	NOUN
ap-1725	97	22	resonator	resonator	NOUN
ap-1725	97	23	type	type	NOUN
ap-1725	97	24	plasmatron	plasmatron	NOUN
ap-1725	97	25	.	.	PUNCT
ap-1725	98	1	proceedings	proceeding	NOUN
ap-1725	98	2	of	of	ADP
ap-1725	98	3	polotsk	polotsk	PROPN
ap-1725	98	4	state	state	PROPN
ap-1725	98	5	university	university	PROPN
ap-1725	98	6	8:103–106	8:103–106	NUM
ap-1725	98	7	,	,	PUNCT
ap-1725	98	8	2010	2010	NUM
ap-1725	98	9	.	.	PUNCT
ap-1725	99	1	[	[	X
ap-1725	99	2	5	5	X
ap-1725	99	3	]	]	PUNCT
ap-1725	99	4	s.	s.	PROPN
ap-1725	99	5	v.	v.	PROPN
ap-1725	99	6	bordusov	bordusov	PROPN
ap-1725	99	7	,	,	PUNCT
ap-1725	99	8	s.	s.	PROPN
ap-1725	99	9	i.	i.	PROPN
ap-1725	99	10	madveyko	madveyko	PROPN
ap-1725	99	11	.	.	PUNCT
ap-1725	100	1	investigation	investigation	NOUN
ap-1725	100	2	of	of	ADP
ap-1725	100	3	the	the	DET
ap-1725	100	4	influence	influence	NOUN
ap-1725	100	5	of	of	ADP
ap-1725	100	6	electrical	electrical	ADJ
ap-1725	100	7	regimes	regime	NOUN
ap-1725	100	8	of	of	ADP
ap-1725	100	9	plasma	plasma	NOUN
ap-1725	100	10	formation	formation	NOUN
ap-1725	100	11	on	on	ADP
ap-1725	100	12	the	the	DET
ap-1725	100	13	local	local	ADJ
ap-1725	100	14	chemical	chemical	NOUN
ap-1725	100	15	activity	activity	NOUN
ap-1725	100	16	of	of	ADP
ap-1725	100	17	the	the	DET
ap-1725	100	18	microwave	microwave	NOUN
ap-1725	100	19	discharge	discharge	NOUN
ap-1725	100	20	plasma	plasma	NOUN
ap-1725	100	21	.	.	PUNCT
ap-1725	101	1	proceedings	proceeding	NOUN
ap-1725	101	2	of	of	ADP
ap-1725	101	3	polotsk	polotsk	ADJ
ap-1725	101	4	state	state	PROPN
ap-1725	101	5	university	university	PROPN
ap-1725	101	6	3:119–123	3:119–123	NOUN
ap-1725	101	7	,	,	PUNCT
ap-1725	101	8	2012	2012	NUM
ap-1725	101	9	.	.	PUNCT
ap-1725	102	1	[	[	X
ap-1725	102	2	6	6	NUM
ap-1725	102	3	]	]	PUNCT
ap-1725	102	4	a.	a.	NOUN
ap-1725	102	5	n.	n.	PROPN
ap-1725	102	6	didenko	didenko	PROPN
ap-1725	102	7	,	,	PUNCT
ap-1725	102	8	b.	b.	PROPN
ap-1725	102	9	v.	v.	PROPN
ap-1725	102	10	zverev	zverev	PROPN
ap-1725	102	11	.	.	PUNCT
ap-1725	102	12	microwave	microwave	NOUN
ap-1725	102	13	energy	energy	NOUN
ap-1725	102	14	.	.	PUNCT
ap-1725	103	1	science	science	NOUN
ap-1725	103	2	,	,	PUNCT
ap-1725	103	3	moscow	moscow	PROPN
ap-1725	103	4	,	,	PUNCT
ap-1725	103	5	2000	2000	NUM
ap-1725	103	6	.	.	PUNCT
ap-1725	104	1	[	[	X
ap-1725	104	2	7	7	NUM
ap-1725	104	3	]	]	X
ap-1725	104	4	a.	a.	NOUN
ap-1725	104	5	v.	v.	ADP
ap-1725	104	6	dinaburg	dinaburg	PROPN
ap-1725	104	7	,	,	PUNCT
ap-1725	104	8	i.	i.	PROPN
ap-1725	104	9	g.	g.	PROPN
ap-1725	104	10	erusalimchik	erusalimchik	PROPN
ap-1725	104	11	,	,	PUNCT
ap-1725	104	12	v.	v.	ADP
ap-1725	104	13	s.	s.	PROPN
ap-1725	104	14	zelova	zelova	PROPN
ap-1725	104	15	,	,	PUNCT
ap-1725	104	16	et	et	PROPN
ap-1725	104	17	al	al	PROPN
ap-1725	104	18	.	.	PROPN
ap-1725	105	1	investigation	investigation	NOUN
ap-1725	105	2	of	of	ADP
ap-1725	105	3	physico	physico	NOUN
ap-1725	105	4	-	-	PUNCT
ap-1725	105	5	chemical	chemical	NOUN
ap-1725	105	6	properties	property	NOUN
ap-1725	105	7	of	of	ADP
ap-1725	105	8	positive	positive	ADJ
ap-1725	105	9	photoresists	photoresist	NOUN
ap-1725	105	10	.	.	PUNCT
ap-1725	106	1	electronic	electronic	ADJ
ap-1725	106	2	equipment	equipment	NOUN
ap-1725	106	3	sor	sor	NOUN
ap-1725	106	4	2	2	NUM
ap-1725	106	5	semiconductor	semiconductor	NOUN
ap-1725	106	6	devices	device	NOUN
ap-1725	106	7	7(71):17–49	7(71):17–49	NUM
ap-1725	106	8	,	,	PUNCT
ap-1725	106	9	2009	2009	NUM
ap-1725	106	10	.	.	PUNCT
ap-1725	107	1	[	[	X
ap-1725	107	2	8	8	NUM
ap-1725	107	3	]	]	PUNCT
ap-1725	107	4	v.	v.	ADP
ap-1725	107	5	m.	m.	NOUN
ap-1725	107	6	dolgopolov	dolgopolov	PROPN
ap-1725	107	7	,	,	PUNCT
ap-1725	107	8	v.	v.	PROPN
ap-1725	107	9	i.	i.	PROPN
ap-1725	107	10	ivanov	ivanov	PROPN
ap-1725	107	11	,	,	PUNCT
ap-1725	107	12	v.	v.	ADP
ap-1725	107	13	a.	a.	NOUN
ap-1725	107	14	krotkov	krotkov	PROPN
ap-1725	107	15	,	,	PUNCT
ap-1725	107	16	et	et	PROPN
ap-1725	107	17	al	al	PROPN
ap-1725	107	18	.	.	PROPN
ap-1725	107	19	spectral	spectral	PROPN
ap-1725	107	20	control	control	PROPN
ap-1725	107	21	indicator	indicator	NOUN
ap-1725	107	22	of	of	ADP
ap-1725	107	23	process	process	NOUN
ap-1725	107	24	removing	remove	VERB
ap-1725	107	25	the	the	DET
ap-1725	107	26	photoresist	photoresist	NOUN
ap-1725	107	27	in	in	ADP
ap-1725	107	28	oxygen	oxygen	NOUN
ap-1725	107	29	plasma	plasma	NOUN
ap-1725	107	30	.	.	PUNCT
ap-1725	108	1	electronic	electronic	ADJ
ap-1725	108	2	engineering	engineering	NOUN
ap-1725	108	3	series	series	PROPN
ap-1725	108	4	7	7	NUM
ap-1725	108	5	technology	technology	NOUN
ap-1725	108	6	,	,	PUNCT
ap-1725	108	7	production	production	NOUN
ap-1725	108	8	organization	organization	NOUN
ap-1725	108	9	and	and	CCONJ
ap-1725	108	10	equipment	equipment	NOUN
ap-1725	108	11	5(114):27–30	5(114):27–30	NUM
ap-1725	108	12	,	,	PUNCT
ap-1725	108	13	1982	1982	NUM
ap-1725	108	14	.	.	PUNCT
ap-1725	109	1	[	[	X
ap-1725	109	2	9	9	NUM
ap-1725	109	3	]	]	PUNCT
ap-1725	109	4	a.	a.	NOUN
ap-1725	109	5	p.	p.	PROPN
ap-1725	109	6	dostanko	dostanko	PROPN
ap-1725	109	7	,	,	PUNCT
ap-1725	109	8	et	et	PROPN
ap-1725	109	9	al	al	PROPN
ap-1725	109	10	.	.	PUNCT
ap-1725	109	11	intensification	intensification	NOUN
ap-1725	109	12	of	of	ADP
ap-1725	109	13	solid	solid	ADJ
ap-1725	109	14	-	-	PUNCT
ap-1725	109	15	state	state	NOUN
ap-1725	109	16	structures	structure	NOUN
ap-1725	109	17	production	production	NOUN
ap-1725	109	18	by	by	ADP
ap-1725	109	19	concentrated	concentrated	ADJ
ap-1725	109	20	energy	energy	NOUN
ap-1725	109	21	flows	flow	NOUN
ap-1725	109	22	.	.	PUNCT
ap-1725	110	1	bestprint	bestprint	NOUN
ap-1725	110	2	,	,	PUNCT
ap-1725	110	3	minsk	minsk	PROPN
ap-1725	110	4	,	,	PUNCT
ap-1725	110	5	2005	2005	NUM
ap-1725	110	6	.	.	PUNCT
ap-1725	111	1	[	[	X
ap-1725	111	2	10	10	NUM
ap-1725	111	3	]	]	PUNCT
ap-1725	111	4	a.	a.	NOUN
ap-1725	111	5	p.	p.	PROPN
ap-1725	111	6	dostanko	dostanko	PROPN
ap-1725	111	7	,	,	PUNCT
ap-1725	111	8	s.	s.	PROPN
ap-1725	111	9	p.	p.	PROPN
ap-1725	111	10	kundas	kundas	PROPN
ap-1725	111	11	,	,	PUNCT
ap-1725	111	12	s.	s.	PROPN
ap-1725	111	13	v.	v.	PROPN
ap-1725	111	14	bordusov	bordusov	PROPN
ap-1725	111	15	,	,	PUNCT
ap-1725	111	16	et	et	PROPN
ap-1725	111	17	al	al	PROPN
ap-1725	111	18	.	.	PUNCT
ap-1725	111	19	plasma	plasma	NOUN
ap-1725	111	20	processes	process	NOUN
ap-1725	111	21	in	in	ADP
ap-1725	111	22	the	the	DET
ap-1725	111	23	productions	production	NOUN
ap-1725	111	24	of	of	ADP
ap-1725	111	25	electronic	electronic	ADJ
ap-1725	111	26	devices	device	NOUN
ap-1725	111	27	.	.	PUNCT
ap-1725	112	1	fuainform	fuainform	NOUN
ap-1725	112	2	,	,	PUNCT
ap-1725	112	3	minsk	minsk	PROPN
ap-1725	112	4	,	,	PUNCT
ap-1725	112	5	2001	2001	NUM
ap-1725	112	6	.	.	PUNCT
ap-1725	113	1	[	[	X
ap-1725	113	2	11	11	NUM
ap-1725	113	3	]	]	PUNCT
ap-1725	113	4	v.	v.	PROPN
ap-1725	113	5	i.	i.	PROPN
ap-1725	113	6	dubkova	dubkova	PROPN
ap-1725	113	7	,	,	PUNCT
ap-1725	113	8	s.	s.	PROPN
ap-1725	113	9	v.	v.	PROPN
ap-1725	113	10	bordusov	bordusov	PROPN
ap-1725	113	11	,	,	PUNCT
ap-1725	113	12	a.	a.	NOUN
ap-1725	113	13	p.	p.	PROPN
ap-1725	113	14	dostanko	dostanko	PROPN
ap-1725	113	15	,	,	PUNCT
ap-1725	113	16	et	et	PROPN
ap-1725	113	17	al	al	PROPN
ap-1725	113	18	.	.	PROPN
ap-1725	113	19	investigation	investigation	NOUN
ap-1725	113	20	of	of	ADP
ap-1725	113	21	the	the	DET
ap-1725	113	22	influence	influence	NOUN
ap-1725	113	23	of	of	ADP
ap-1725	113	24	microwave	microwave	NOUN
ap-1725	113	25	field	field	NOUN
ap-1725	113	26	on	on	ADP
ap-1725	113	27	the	the	DET
ap-1725	113	28	curing	cure	VERB
ap-1725	113	29	process	process	NOUN
ap-1725	113	30	and	and	CCONJ
ap-1725	113	31	properties	property	NOUN
ap-1725	113	32	of	of	ADP
ap-1725	113	33	epoxy	epoxy	NOUN
ap-1725	113	34	compositions	composition	NOUN
ap-1725	113	35	.	.	PUNCT
ap-1725	114	1	journal	journal	NOUN
ap-1725	114	2	of	of	ADP
ap-1725	114	3	engineering	engineering	NOUN
ap-1725	114	4	physics	physic	NOUN
ap-1725	114	5	70(6):1014–1019	70(6):1014–1019	NUM
ap-1725	114	6	,	,	PUNCT
ap-1725	114	7	2009	2009	NUM
ap-1725	114	8	.	.	PUNCT
ap-1725	115	1	[	[	X
ap-1725	115	2	12	12	NUM
ap-1725	115	3	]	]	PUNCT
ap-1725	115	4	a.	a.	NOUN
ap-1725	115	5	macdonald	macdonald	PROPN
ap-1725	115	6	.	.	PUNCT
ap-1725	115	7	microwave	microwave	NOUN
ap-1725	115	8	breakdown	breakdown	NOUN
ap-1725	115	9	in	in	ADP
ap-1725	115	10	gases	gas	NOUN
ap-1725	115	11	.	.	PUNCT
ap-1725	116	1	mir	mir	PROPN
ap-1725	116	2	,	,	PUNCT
ap-1725	116	3	moscow	moscow	PROPN
ap-1725	116	4	,	,	PUNCT
ap-1725	116	5	1969	1969	NUM
ap-1725	116	6	.	.	PUNCT
ap-1725	117	1	[	[	X
ap-1725	117	2	13	13	NUM
ap-1725	117	3	]	]	X
ap-1725	117	4	w.	w.	PROPN
ap-1725	117	5	moro	moro	PROPN
ap-1725	117	6	.	.	PUNCT
ap-1725	118	1	microlithography	microlithography	NOUN
ap-1725	118	2	.	.	PUNCT
ap-1725	119	1	mir	mir	PROPN
ap-1725	119	2	,	,	PUNCT
ap-1725	119	3	moscow	moscow	PROPN
ap-1725	119	4	,	,	PUNCT
ap-1725	119	5	1990	1990	NUM
ap-1725	119	6	.	.	PUNCT
ap-1725	120	1	116	116	NUM
ap-1725	120	2	acta	acta	PROPN
ap-1725	120	3	polytechnica	polytechnica	PROPN
ap-1725	120	4	53(2):113–116	53(2):113–116	PROPN
ap-1725	120	5	,	,	PUNCT
ap-1725	120	6	2013	2013	NUM
ap-1725	120	7	1	1	NUM
ap-1725	120	8	introduction	introduction	NOUN
ap-1725	120	9	2	2	NUM
ap-1725	120	10	method	method	NOUN
ap-1725	120	11	of	of	ADP
ap-1725	120	12	experiment	experiment	NOUN
ap-1725	120	13	3	3	NUM
ap-1725	120	14	results	result	NOUN
ap-1725	120	15	and	and	CCONJ
ap-1725	120	16	their	their	PRON
ap-1725	120	17	discussion	discussion	NOUN
ap-1725	120	18	4	4	NUM
ap-1725	120	19	conclusions	conclusion	NOUN
ap-1725	120	20	references	reference	NOUN