id	sid	tid	token	lemma	pos
ap-4877	1	1	acta	acta	PROPN
ap-4877	1	2	polytechnica	polytechnica	PROPN
ap-4877	1	3	doi:10.14311	doi:10.14311	PROPN
ap-4877	1	4	/	/	SYM
ap-4877	1	5	ap.2019.59.0024	ap.2019.59.0024	PROPN
ap-4877	1	6	acta	acta	PROPN
ap-4877	1	7	polytechnica	polytechnica	PROPN
ap-4877	1	8	59(1):24–34	59(1):24–34	NUM
ap-4877	1	9	,	,	PUNCT
ap-4877	1	10	2019	2019	NUM
ap-4877	1	11	©	©	PROPN
ap-4877	1	12	czech	czech	PROPN
ap-4877	1	13	technical	technical	PROPN
ap-4877	1	14	university	university	PROPN
ap-4877	1	15	in	in	ADP
ap-4877	1	16	prague	prague	PROPN
ap-4877	1	17	,	,	PUNCT
ap-4877	1	18	2019	2019	NUM
ap-4877	1	19	available	available	ADJ
ap-4877	1	20	online	online	ADV
ap-4877	1	21	at	at	ADP
ap-4877	1	22	http://ojs.cvut.cz/ojs/index.php/ap	http://ojs.cvut.cz/ojs/index.php/ap	PROPN
ap-4877	1	23	low	low	ADJ
ap-4877	1	24	leakage	leakage	NOUN
ap-4877	1	25	charge	charge	NOUN
ap-4877	1	26	recycling	recycling	NOUN
ap-4877	1	27	technique	technique	NOUN
ap-4877	1	28	for	for	ADP
ap-4877	1	29	power	power	NOUN
ap-4877	1	30	minimization	minimization	NOUN
ap-4877	1	31	in	in	ADP
ap-4877	1	32	cntfet	cntfet	ADJ
ap-4877	1	33	circuits	circuit	NOUN
ap-4877	1	34	manickam	manickam	ADJ
ap-4877	1	35	kavithaa,∗	kavithaa,∗	NOUN
ap-4877	1	36	,	,	PUNCT
ap-4877	1	37	alagar	alagar	NOUN
ap-4877	1	38	m.	m.	PROPN
ap-4877	1	39	kalpanab	kalpanab	PROPN
ap-4877	2	1	a	a	DET
ap-4877	2	2	government	government	NOUN
ap-4877	2	3	college	college	NOUN
ap-4877	2	4	of	of	ADP
ap-4877	2	5	engineering	engineering	PROPN
ap-4877	2	6	,	,	PUNCT
ap-4877	2	7	bargur	bargur	PROPN
ap-4877	2	8	,	,	PUNCT
ap-4877	2	9	india-635104	india-635104	PROPN
ap-4877	2	10	b	b	PROPN
ap-4877	2	11	government	government	PROPN
ap-4877	2	12	college	college	NOUN
ap-4877	2	13	of	of	ADP
ap-4877	2	14	engineering	engineering	PROPN
ap-4877	2	15	,	,	PUNCT
ap-4877	2	16	salem	salem	NOUN
ap-4877	2	17	,	,	PUNCT
ap-4877	2	18	india-636011	india-636011	ADJ
ap-4877	2	19	∗	∗	NOUN
ap-4877	2	20	corresponding	correspond	VERB
ap-4877	2	21	author	author	NOUN
ap-4877	2	22	:	:	PUNCT
ap-4877	2	23	kavithaengr@gmail.com	kavithaengr@gmail.com	X
ap-4877	3	1	abstract	abstract	ADJ
ap-4877	3	2	.	.	PUNCT
ap-4877	4	1	carbon	carbon	NOUN
ap-4877	4	2	nanotube	nanotube	ADJ
ap-4877	4	3	field	field	NOUN
ap-4877	4	4	effect	effect	NOUN
ap-4877	4	5	transistor	transistor	NOUN
ap-4877	4	6	(	(	PUNCT
ap-4877	4	7	cntfet	cntfet	PROPN
ap-4877	4	8	)	)	PUNCT
ap-4877	4	9	is	be	AUX
ap-4877	4	10	one	one	NUM
ap-4877	4	11	of	of	ADP
ap-4877	4	12	the	the	DET
ap-4877	4	13	most	most	ADV
ap-4877	4	14	promising	promising	ADJ
ap-4877	4	15	candidates	candidate	NOUN
ap-4877	4	16	in	in	ADP
ap-4877	4	17	the	the	DET
ap-4877	4	18	near	near	ADJ
ap-4877	4	19	future	future	NOUN
ap-4877	4	20	for	for	ADP
ap-4877	4	21	digital	digital	ADJ
ap-4877	4	22	design	design	NOUN
ap-4877	4	23	due	due	ADP
ap-4877	4	24	to	to	ADP
ap-4877	4	25	its	its	PRON
ap-4877	4	26	better	well	ADJ
ap-4877	4	27	electrostatics	electrostatic	NOUN
ap-4877	4	28	and	and	CCONJ
ap-4877	4	29	higher	high	ADJ
ap-4877	4	30	mobility	mobility	NOUN
ap-4877	4	31	characteristics	characteristic	NOUN
ap-4877	4	32	.	.	PUNCT
ap-4877	5	1	parameters	parameter	NOUN
ap-4877	5	2	that	that	PRON
ap-4877	5	3	determine	determine	VERB
ap-4877	5	4	the	the	DET
ap-4877	5	5	cntfet	cntfet	ADJ
ap-4877	5	6	performance	performance	NOUN
ap-4877	5	7	are	be	AUX
ap-4877	5	8	the	the	DET
ap-4877	5	9	number	number	NOUN
ap-4877	5	10	of	of	ADP
ap-4877	5	11	tubes	tube	NOUN
ap-4877	5	12	,	,	PUNCT
ap-4877	5	13	pitch	pitch	NOUN
ap-4877	5	14	,	,	PUNCT
ap-4877	5	15	diameter	diameter	NOUN
ap-4877	5	16	and	and	CCONJ
ap-4877	5	17	oxide	oxide	NOUN
ap-4877	5	18	thickness	thickness	NOUN
ap-4877	5	19	.	.	PUNCT
ap-4877	6	1	in	in	ADP
ap-4877	6	2	this	this	DET
ap-4877	6	3	paper	paper	NOUN
ap-4877	6	4	,	,	PUNCT
ap-4877	6	5	a	a	DET
ap-4877	6	6	power	power	NOUN
ap-4877	6	7	gating	gate	VERB
ap-4877	6	8	design	design	NOUN
ap-4877	6	9	methodology	methodology	NOUN
ap-4877	6	10	to	to	PART
ap-4877	6	11	realise	realise	VERB
ap-4877	6	12	low	low	ADJ
ap-4877	6	13	power	power	NOUN
ap-4877	6	14	cntfet	cntfet	PROPN
ap-4877	6	15	digital	digital	ADJ
ap-4877	6	16	circuits	circuit	NOUN
ap-4877	6	17	even	even	ADV
ap-4877	6	18	under	under	ADP
ap-4877	6	19	device	device	NOUN
ap-4877	6	20	parameter	parameter	NOUN
ap-4877	6	21	changes	change	NOUN
ap-4877	6	22	is	be	AUX
ap-4877	6	23	presented	present	VERB
ap-4877	6	24	.	.	PUNCT
ap-4877	7	1	investigation	investigation	NOUN
ap-4877	7	2	about	about	ADP
ap-4877	7	3	the	the	DET
ap-4877	7	4	effect	effect	NOUN
ap-4877	7	5	of	of	ADP
ap-4877	7	6	different	different	ADJ
ap-4877	7	7	cntfet	cntfet	NOUN
ap-4877	7	8	parameters	parameter	NOUN
ap-4877	7	9	on	on	ADP
ap-4877	7	10	dynamic	dynamic	ADJ
ap-4877	7	11	and	and	CCONJ
ap-4877	7	12	standby	standby	ADJ
ap-4877	7	13	power	power	NOUN
ap-4877	7	14	is	be	AUX
ap-4877	7	15	carried	carry	VERB
ap-4877	7	16	out	out	ADP
ap-4877	7	17	.	.	PUNCT
ap-4877	8	1	simulation	simulation	NOUN
ap-4877	8	2	results	result	NOUN
ap-4877	8	3	reveal	reveal	VERB
ap-4877	8	4	that	that	SCONJ
ap-4877	8	5	the	the	DET
ap-4877	8	6	power	power	NOUN
ap-4877	8	7	gated	gate	VERB
ap-4877	8	8	circuits	circuit	NOUN
ap-4877	8	9	suppress	suppress	VERB
ap-4877	8	10	a	a	DET
ap-4877	8	11	maximum	maximum	NOUN
ap-4877	8	12	of	of	ADP
ap-4877	8	13	about	about	ADV
ap-4877	8	14	67	67	NUM
ap-4877	8	15	%	%	NOUN
ap-4877	8	16	dynamic	dynamic	ADJ
ap-4877	8	17	power	power	NOUN
ap-4877	8	18	and	and	CCONJ
ap-4877	8	19	59	59	NUM
ap-4877	8	20	%	%	NOUN
ap-4877	8	21	standby	standby	ADJ
ap-4877	8	22	power	power	NOUN
ap-4877	8	23	compared	compare	VERB
ap-4877	8	24	to	to	ADP
ap-4877	8	25	conventional	conventional	ADJ
ap-4877	8	26	circuits	circuit	NOUN
ap-4877	8	27	.	.	PUNCT
ap-4877	9	1	keywords	keyword	NOUN
ap-4877	9	2	:	:	PUNCT
ap-4877	9	3	carbon	carbon	NOUN
ap-4877	9	4	nanotube	nanotube	ADJ
ap-4877	9	5	field	field	NOUN
ap-4877	9	6	effect	effect	NOUN
ap-4877	9	7	transistor	transistor	NOUN
ap-4877	9	8	(	(	PUNCT
ap-4877	9	9	cntfet	cntfet	PROPN
ap-4877	9	10	)	)	PUNCT
ap-4877	9	11	;	;	PUNCT
ap-4877	9	12	power	power	NOUN
ap-4877	9	13	gating	gating	NOUN
ap-4877	9	14	;	;	PUNCT
ap-4877	9	15	power	power	NOUN
ap-4877	9	16	dissipation	dissipation	NOUN
ap-4877	9	17	;	;	PUNCT
ap-4877	9	18	leakage	leakage	NOUN
ap-4877	9	19	;	;	PUNCT
ap-4877	9	20	dynamic	dynamic	ADJ
ap-4877	9	21	power	power	NOUN
ap-4877	9	22	.	.	PUNCT
ap-4877	10	1	1	1	X
ap-4877	10	2	.	.	X
ap-4877	10	3	introduction	introduction	NOUN
ap-4877	10	4	power	power	NOUN
ap-4877	10	5	dissipation	dissipation	NOUN
ap-4877	10	6	has	have	AUX
ap-4877	10	7	become	become	VERB
ap-4877	10	8	an	an	DET
ap-4877	10	9	important	important	ADJ
ap-4877	10	10	reliability	reliability	NOUN
ap-4877	10	11	issue	issue	NOUN
ap-4877	10	12	in	in	ADP
ap-4877	10	13	the	the	DET
ap-4877	10	14	design	design	NOUN
ap-4877	10	15	of	of	ADP
ap-4877	10	16	submicron	submicron	NOUN
ap-4877	10	17	level	level	NOUN
ap-4877	10	18	digital	digital	ADJ
ap-4877	10	19	devices	device	NOUN
ap-4877	10	20	.	.	PUNCT
ap-4877	11	1	current	current	ADJ
ap-4877	11	2	cmos	cmos	PROPN
ap-4877	11	3	technology	technology	NOUN
ap-4877	11	4	encounters	encounter	VERB
ap-4877	11	5	considerable	considerable	ADJ
ap-4877	11	6	challenges	challenge	NOUN
ap-4877	11	7	like	like	ADP
ap-4877	11	8	short	short	ADJ
ap-4877	11	9	-	-	PUNCT
ap-4877	11	10	channel	channel	NOUN
ap-4877	11	11	effects	effect	NOUN
ap-4877	11	12	,	,	PUNCT
ap-4877	11	13	lack	lack	NOUN
ap-4877	11	14	of	of	ADP
ap-4877	11	15	control	control	NOUN
ap-4877	11	16	over	over	ADP
ap-4877	11	17	leakage	leakage	NOUN
ap-4877	11	18	and	and	CCONJ
ap-4877	11	19	source	source	NOUN
ap-4877	11	20	-	-	PUNCT
ap-4877	11	21	to	to	PART
ap-4877	11	22	drain	drain	VERB
ap-4877	11	23	tunnelling	tunnelling	NOUN
ap-4877	11	24	[	[	X
ap-4877	11	25	1–6	1–6	NUM
ap-4877	11	26	]	]	X
ap-4877	11	27	.	.	PUNCT
ap-4877	12	1	cntfets	cntfet	NOUN
ap-4877	12	2	are	be	AUX
ap-4877	12	3	considered	consider	VERB
ap-4877	12	4	as	as	ADP
ap-4877	12	5	a	a	DET
ap-4877	12	6	promising	promising	ADJ
ap-4877	12	7	alternative	alternative	NOUN
ap-4877	12	8	to	to	ADP
ap-4877	12	9	the	the	DET
ap-4877	12	10	cmos	cmos	PROPN
ap-4877	12	11	technology	technology	NOUN
ap-4877	12	12	in	in	ADP
ap-4877	12	13	future	future	ADJ
ap-4877	12	14	nanometre	nanometre	NOUN
ap-4877	12	15	digital	digital	ADJ
ap-4877	12	16	design	design	NOUN
ap-4877	12	17	.	.	PUNCT
ap-4877	13	1	cntfets	cntfet	NOUN
ap-4877	13	2	have	have	VERB
ap-4877	13	3	many	many	ADJ
ap-4877	13	4	advantageous	advantageous	ADJ
ap-4877	13	5	characteristics	characteristic	NOUN
ap-4877	13	6	like	like	ADP
ap-4877	13	7	high	high	ADJ
ap-4877	13	8	electron	electron	NOUN
ap-4877	13	9	mobility	mobility	NOUN
ap-4877	13	10	,	,	PUNCT
ap-4877	13	11	large	large	ADJ
ap-4877	13	12	current	current	ADJ
ap-4877	13	13	carrying	carrying	NOUN
ap-4877	13	14	capability	capability	NOUN
ap-4877	13	15	and	and	CCONJ
ap-4877	13	16	smaller	small	ADJ
ap-4877	13	17	device	device	NOUN
ap-4877	13	18	footprint	footprint	NOUN
ap-4877	13	19	compared	compare	VERB
ap-4877	13	20	to	to	ADP
ap-4877	13	21	mosfets	mosfet	NOUN
ap-4877	13	22	[	[	X
ap-4877	13	23	7	7	NUM
ap-4877	13	24	]	]	PUNCT
ap-4877	13	25	.	.	PUNCT
ap-4877	14	1	in	in	ADP
ap-4877	14	2	recent	recent	ADJ
ap-4877	14	3	years	year	NOUN
ap-4877	14	4	,	,	PUNCT
ap-4877	14	5	attempts	attempt	VERB
ap-4877	14	6	on	on	ADP
ap-4877	14	7	modelling	modelling	NOUN
ap-4877	14	8	and	and	CCONJ
ap-4877	14	9	simulating	simulate	VERB
ap-4877	14	10	cntfets	cntfet	NOUN
ap-4877	14	11	[	[	X
ap-4877	14	12	8	8	NUM
ap-4877	14	13	,	,	PUNCT
ap-4877	14	14	9	9	NUM
ap-4877	14	15	]	]	PUNCT
ap-4877	14	16	are	be	AUX
ap-4877	14	17	made	make	VERB
ap-4877	14	18	for	for	ADP
ap-4877	14	19	estimating	estimate	VERB
ap-4877	14	20	their	their	PRON
ap-4877	14	21	performance	performance	NOUN
ap-4877	14	22	at	at	ADP
ap-4877	14	23	the	the	DET
ap-4877	14	24	device	device	NOUN
ap-4877	14	25	level	level	NOUN
ap-4877	14	26	.	.	PUNCT
ap-4877	15	1	the	the	DET
ap-4877	15	2	main	main	ADJ
ap-4877	15	3	idea	idea	NOUN
ap-4877	15	4	of	of	ADP
ap-4877	15	5	the	the	DET
ap-4877	15	6	paper	paper	NOUN
ap-4877	15	7	is	be	AUX
ap-4877	15	8	to	to	PART
ap-4877	15	9	reduce	reduce	VERB
ap-4877	15	10	the	the	DET
ap-4877	15	11	power	power	NOUN
ap-4877	15	12	dissipation	dissipation	NOUN
ap-4877	15	13	of	of	ADP
ap-4877	15	14	cntfet	cntfet	ADJ
ap-4877	15	15	digital	digital	ADJ
ap-4877	15	16	circuits	circuit	NOUN
ap-4877	15	17	by	by	ADP
ap-4877	15	18	using	use	VERB
ap-4877	15	19	a	a	DET
ap-4877	15	20	methodology	methodology	NOUN
ap-4877	15	21	called	call	VERB
ap-4877	15	22	power	power	NOUN
ap-4877	15	23	gating	gating	NOUN
ap-4877	15	24	.	.	PUNCT
ap-4877	16	1	in	in	ADP
ap-4877	16	2	this	this	DET
ap-4877	16	3	paper	paper	NOUN
ap-4877	16	4	,	,	PUNCT
ap-4877	16	5	a	a	DET
ap-4877	16	6	low	low	ADJ
ap-4877	16	7	leakage	leakage	NOUN
ap-4877	16	8	charge	charge	NOUN
ap-4877	16	9	recycling	recycling	NOUN
ap-4877	16	10	(	(	PUNCT
ap-4877	16	11	llcr	llcr	NOUN
ap-4877	16	12	)	)	PUNCT
ap-4877	16	13	powergating	powergate	VERB
ap-4877	16	14	technique	technique	NOUN
ap-4877	16	15	designed	design	VERB
ap-4877	16	16	for	for	ADP
ap-4877	16	17	cmos	cmos	ADJ
ap-4877	16	18	circuits	circuit	NOUN
ap-4877	16	19	has	have	AUX
ap-4877	16	20	been	be	AUX
ap-4877	16	21	tested	test	VERB
ap-4877	16	22	with	with	ADP
ap-4877	16	23	cntfet	cntfet	PROPN
ap-4877	16	24	digital	digital	ADJ
ap-4877	16	25	circuits	circuit	NOUN
ap-4877	16	26	like	like	ADP
ap-4877	16	27	an	an	DET
ap-4877	16	28	inverter	inverter	NOUN
ap-4877	16	29	,	,	PUNCT
ap-4877	16	30	multiplexer	multiplexer	NOUN
ap-4877	16	31	,	,	PUNCT
ap-4877	16	32	vco	vco	PROPN
ap-4877	16	33	,	,	PUNCT
ap-4877	16	34	and	and	CCONJ
ap-4877	16	35	sram	sram	PROPN
ap-4877	16	36	cell	cell	NOUN
ap-4877	16	37	for	for	ADP
ap-4877	16	38	a	a	DET
ap-4877	16	39	low	low	ADJ
ap-4877	16	40	power	power	NOUN
ap-4877	16	41	dissipation	dissipation	NOUN
ap-4877	16	42	.	.	PUNCT
ap-4877	17	1	a	a	DET
ap-4877	17	2	power	power	NOUN
ap-4877	17	3	estimation	estimation	NOUN
ap-4877	17	4	is	be	AUX
ap-4877	17	5	done	do	VERB
ap-4877	17	6	for	for	ADP
ap-4877	17	7	these	these	DET
ap-4877	17	8	digital	digital	ADJ
ap-4877	17	9	circuits	circuit	NOUN
ap-4877	17	10	with	with	ADP
ap-4877	17	11	and	and	CCONJ
ap-4877	17	12	without	without	ADP
ap-4877	17	13	the	the	DET
ap-4877	17	14	llcr	llcr	NOUN
ap-4877	17	15	technique	technique	NOUN
ap-4877	17	16	.	.	PUNCT
ap-4877	18	1	the	the	DET
ap-4877	18	2	paper	paper	NOUN
ap-4877	18	3	is	be	AUX
ap-4877	18	4	organized	organize	VERB
ap-4877	18	5	as	as	SCONJ
ap-4877	18	6	follows	follow	VERB
ap-4877	18	7	:	:	PUNCT
ap-4877	18	8	section	section	NOUN
ap-4877	18	9	2	2	NUM
ap-4877	18	10	briefs	brief	NOUN
ap-4877	18	11	about	about	ADP
ap-4877	18	12	the	the	DET
ap-4877	18	13	structure	structure	NOUN
ap-4877	18	14	and	and	CCONJ
ap-4877	18	15	equivalent	equivalent	ADJ
ap-4877	18	16	circuit	circuit	NOUN
ap-4877	18	17	of	of	ADP
ap-4877	18	18	the	the	DET
ap-4877	18	19	cntfet	cntfet	NOUN
ap-4877	18	20	,	,	PUNCT
ap-4877	18	21	and	and	CCONJ
ap-4877	18	22	power	power	NOUN
ap-4877	18	23	gating	gate	VERB
ap-4877	18	24	techniques	technique	NOUN
ap-4877	18	25	.	.	PUNCT
ap-4877	19	1	section	section	NOUN
ap-4877	19	2	3	3	NUM
ap-4877	19	3	presents	present	VERB
ap-4877	19	4	the	the	DET
ap-4877	19	5	proposed	propose	VERB
ap-4877	19	6	llcr	llcr	PROPN
ap-4877	19	7	power	power	NOUN
ap-4877	19	8	gating	gating	NOUN
ap-4877	19	9	technique	technique	NOUN
ap-4877	19	10	and	and	CCONJ
ap-4877	19	11	its	its	PRON
ap-4877	19	12	functionality	functionality	NOUN
ap-4877	19	13	.	.	PUNCT
ap-4877	20	1	simulation	simulation	NOUN
ap-4877	20	2	results	result	NOUN
ap-4877	20	3	are	be	AUX
ap-4877	20	4	analysed	analyse	VERB
ap-4877	20	5	in	in	ADP
ap-4877	20	6	section	section	NOUN
ap-4877	20	7	4	4	NUM
ap-4877	20	8	and	and	CCONJ
ap-4877	20	9	section	section	NOUN
ap-4877	20	10	5	5	NUM
ap-4877	20	11	concludes	conclude	VERB
ap-4877	20	12	the	the	DET
ap-4877	20	13	work	work	NOUN
ap-4877	20	14	.	.	PUNCT
ap-4877	21	1	2	2	X
ap-4877	21	2	.	.	X
ap-4877	21	3	literature	literature	NOUN
ap-4877	21	4	review	review	VERB
ap-4877	21	5	2.1	2.1	NUM
ap-4877	21	6	.	.	PUNCT
ap-4877	22	1	power	power	NOUN
ap-4877	22	2	gating	gate	VERB
ap-4877	22	3	techiques	techique	NOUN
ap-4877	22	4	the	the	DET
ap-4877	22	5	power	power	NOUN
ap-4877	22	6	gating	gate	VERB
ap-4877	22	7	approach	approach	NOUN
ap-4877	22	8	cuts	cut	VERB
ap-4877	22	9	off	off	ADP
ap-4877	22	10	the	the	DET
ap-4877	22	11	power	power	NOUN
ap-4877	22	12	to	to	ADP
ap-4877	22	13	the	the	DET
ap-4877	22	14	circuit	circuit	NOUN
ap-4877	22	15	blocks	block	NOUN
ap-4877	22	16	when	when	SCONJ
ap-4877	22	17	they	they	PRON
ap-4877	22	18	are	be	AUX
ap-4877	22	19	not	not	PART
ap-4877	22	20	in	in	ADP
ap-4877	22	21	use	use	NOUN
ap-4877	22	22	[	[	X
ap-4877	22	23	10	10	NUM
ap-4877	22	24	,	,	PUNCT
ap-4877	22	25	11	11	NUM
ap-4877	22	26	]	]	PUNCT
ap-4877	22	27	.	.	PUNCT
ap-4877	23	1	the	the	DET
ap-4877	23	2	transistor	transistor	NOUN
ap-4877	23	3	-	-	PUNCT
ap-4877	23	4	based	base	VERB
ap-4877	23	5	power	power	NOUN
ap-4877	23	6	gating	gating	NOUN
ap-4877	23	7	is	be	AUX
ap-4877	23	8	implemented	implement	VERB
ap-4877	23	9	by	by	ADP
ap-4877	23	10	placing	place	VERB
ap-4877	23	11	sleep	sleep	NOUN
ap-4877	23	12	transistors	transistor	NOUN
ap-4877	23	13	in	in	ADP
ap-4877	23	14	-	-	PUNCT
ap-4877	23	15	line	line	NOUN
ap-4877	23	16	between	between	ADP
ap-4877	23	17	the	the	DET
ap-4877	23	18	circuit	circuit	NOUN
ap-4877	23	19	and	and	CCONJ
ap-4877	23	20	the	the	DET
ap-4877	23	21	power	power	NOUN
ap-4877	23	22	network	network	NOUN
ap-4877	23	23	or	or	CCONJ
ap-4877	23	24	the	the	DET
ap-4877	23	25	ground	ground	NOUN
ap-4877	23	26	network	network	NOUN
ap-4877	23	27	.	.	PUNCT
ap-4877	24	1	mutoh	mutoh	PROPN
ap-4877	24	2	et	et	PROPN
ap-4877	24	3	al	al	PROPN
ap-4877	24	4	.	.	PUNCT
ap-4877	25	1	[	[	X
ap-4877	25	2	12	12	NUM
ap-4877	25	3	]	]	PUNCT
ap-4877	25	4	proposed	propose	VERB
ap-4877	25	5	a	a	DET
ap-4877	25	6	power	power	NOUN
ap-4877	25	7	gating	gating	NOUN
ap-4877	25	8	technique	technique	NOUN
ap-4877	25	9	in	in	ADP
ap-4877	25	10	which	which	PRON
ap-4877	25	11	the	the	DET
ap-4877	25	12	circuit	circuit	NOUN
ap-4877	25	13	blocks	block	NOUN
ap-4877	25	14	operate	operate	VERB
ap-4877	25	15	in	in	ADP
ap-4877	25	16	active	active	ADJ
ap-4877	25	17	and	and	CCONJ
ap-4877	25	18	sleep	sleep	NOUN
ap-4877	25	19	modes	mode	NOUN
ap-4877	25	20	.	.	PUNCT
ap-4877	26	1	sleep	sleep	PROPN
ap-4877	26	2	mode	mode	PROPN
ap-4877	26	3	offers	offer	VERB
ap-4877	26	4	high	high	ADJ
ap-4877	26	5	leakage	leakage	NOUN
ap-4877	26	6	reduction	reduction	NOUN
ap-4877	26	7	,	,	PUNCT
ap-4877	26	8	but	but	CCONJ
ap-4877	26	9	the	the	DET
ap-4877	26	10	data	datum	NOUN
ap-4877	26	11	in	in	ADP
ap-4877	26	12	circuit	circuit	NOUN
ap-4877	26	13	blocks	block	NOUN
ap-4877	26	14	are	be	AUX
ap-4877	26	15	lost	lose	VERB
ap-4877	26	16	.	.	PUNCT
ap-4877	27	1	this	this	PRON
ap-4877	27	2	becomes	become	VERB
ap-4877	27	3	undesirable	undesirable	ADJ
ap-4877	27	4	if	if	SCONJ
ap-4877	27	5	the	the	DET
ap-4877	27	6	standby	standby	ADJ
ap-4877	27	7	duration	duration	NOUN
ap-4877	27	8	is	be	AUX
ap-4877	27	9	short	short	ADJ
ap-4877	27	10	.	.	PUNCT
ap-4877	28	1	to	to	PART
ap-4877	28	2	preserve	preserve	VERB
ap-4877	28	3	the	the	DET
ap-4877	28	4	data	datum	NOUN
ap-4877	28	5	in	in	ADP
ap-4877	28	6	the	the	DET
ap-4877	28	7	circuit	circuit	NOUN
ap-4877	28	8	block	block	NOUN
ap-4877	28	9	during	during	ADP
ap-4877	28	10	idle	idle	ADJ
ap-4877	28	11	periods	period	NOUN
ap-4877	28	12	,	,	PUNCT
ap-4877	28	13	an	an	DET
ap-4877	28	14	intermediate	intermediate	ADJ
ap-4877	28	15	data	data	NOUN
ap-4877	28	16	retention	retention	NOUN
ap-4877	28	17	mode	mode	NOUN
ap-4877	28	18	is	be	AUX
ap-4877	28	19	required	require	VERB
ap-4877	28	20	.	.	PUNCT
ap-4877	29	1	many	many	ADJ
ap-4877	29	2	power	power	NOUN
ap-4877	29	3	gating	gating	NOUN
ap-4877	29	4	approaches	approach	NOUN
ap-4877	29	5	[	[	X
ap-4877	29	6	13–16	13–16	NOUN
ap-4877	29	7	]	]	PUNCT
ap-4877	29	8	have	have	AUX
ap-4877	29	9	been	be	AUX
ap-4877	29	10	proposed	propose	VERB
ap-4877	29	11	for	for	ADP
ap-4877	29	12	data	datum	NOUN
ap-4877	29	13	retention	retention	NOUN
ap-4877	29	14	with	with	ADP
ap-4877	29	15	an	an	DET
ap-4877	29	16	intermediate	intermediate	ADJ
ap-4877	29	17	power	power	NOUN
ap-4877	29	18	saving	save	VERB
ap-4877	29	19	mode	mode	NOUN
ap-4877	29	20	(	(	PUNCT
ap-4877	29	21	drowsy	drowsy	NOUN
ap-4877	29	22	mode	mode	NOUN
ap-4877	29	23	)	)	PUNCT
ap-4877	29	24	wherein	wherein	SCONJ
ap-4877	29	25	a	a	DET
ap-4877	29	26	significant	significant	ADJ
ap-4877	29	27	voltage	voltage	NOUN
ap-4877	29	28	difference	difference	NOUN
ap-4877	29	29	is	be	AUX
ap-4877	29	30	maintained	maintain	VERB
ap-4877	29	31	across	across	ADP
ap-4877	29	32	the	the	DET
ap-4877	29	33	circuit	circuit	NOUN
ap-4877	29	34	blocks	block	NOUN
ap-4877	29	35	by	by	ADP
ap-4877	29	36	boosting	boost	VERB
ap-4877	29	37	the	the	DET
ap-4877	29	38	virtual	virtual	ADJ
ap-4877	29	39	ground	ground	NOUN
ap-4877	29	40	voltage	voltage	NOUN
ap-4877	29	41	.	.	PUNCT
ap-4877	30	1	clamping	clamp	VERB
ap-4877	30	2	devices	device	NOUN
ap-4877	30	3	like	like	ADP
ap-4877	30	4	diodes	diode	NOUN
ap-4877	30	5	and	and	CCONJ
ap-4877	30	6	transistors	transistor	NOUN
ap-4877	30	7	are	be	AUX
ap-4877	30	8	used	use	VERB
ap-4877	30	9	for	for	ADP
ap-4877	30	10	raising	raise	VERB
ap-4877	30	11	the	the	DET
ap-4877	30	12	virtual	virtual	ADJ
ap-4877	30	13	ground	ground	NOUN
ap-4877	30	14	voltage	voltage	NOUN
ap-4877	30	15	.	.	PUNCT
ap-4877	31	1	sleepy	sleepy	ADJ
ap-4877	31	2	keeper	keeper	NOUN
ap-4877	31	3	approach	approach	NOUN
ap-4877	31	4	[	[	X
ap-4877	31	5	13	13	NUM
ap-4877	31	6	]	]	PUNCT
ap-4877	31	7	uses	use	VERB
ap-4877	31	8	additional	additional	ADJ
ap-4877	31	9	transistors	transistor	NOUN
ap-4877	31	10	between	between	ADP
ap-4877	31	11	the	the	DET
ap-4877	31	12	circuit	circuit	NOUN
ap-4877	31	13	output	output	NOUN
ap-4877	31	14	and	and	CCONJ
ap-4877	31	15	supply	supply	NOUN
ap-4877	31	16	rails	rail	NOUN
ap-4877	31	17	to	to	PART
ap-4877	31	18	retain	retain	VERB
ap-4877	31	19	the	the	DET
ap-4877	31	20	data	datum	NOUN
ap-4877	31	21	in	in	ADP
ap-4877	31	22	drowsy	drowsy	NOUN
ap-4877	31	23	mode	mode	NOUN
ap-4877	31	24	.	.	PUNCT
ap-4877	32	1	this	this	DET
ap-4877	32	2	approach	approach	NOUN
ap-4877	32	3	is	be	AUX
ap-4877	32	4	not	not	PART
ap-4877	32	5	emphatically	emphatically	ADV
ap-4877	32	6	used	use	VERB
ap-4877	32	7	to	to	PART
ap-4877	32	8	dynamically	dynamically	ADV
ap-4877	32	9	change	change	VERB
ap-4877	32	10	the	the	DET
ap-4877	32	11	output	output	NOUN
ap-4877	32	12	voltage	voltage	NOUN
ap-4877	32	13	but	but	CCONJ
ap-4877	32	14	instead	instead	ADV
ap-4877	32	15	only	only	ADV
ap-4877	32	16	used	use	VERB
ap-4877	32	17	to	to	PART
ap-4877	32	18	maintain	maintain	VERB
ap-4877	32	19	an	an	DET
ap-4877	32	20	already	already	ADV
ap-4877	32	21	calculated	calculate	VERB
ap-4877	32	22	output	output	NOUN
ap-4877	32	23	voltage	voltage	NOUN
ap-4877	32	24	.	.	PUNCT
ap-4877	33	1	dual	dual	ADJ
ap-4877	33	2	diode	diode	NOUN
ap-4877	33	3	vth	vth	NOUN
ap-4877	33	4	approach	approach	NOUN
ap-4877	33	5	[	[	X
ap-4877	33	6	14	14	NUM
ap-4877	33	7	]	]	PUNCT
ap-4877	33	8	utilizes	utilizes	ADJ
ap-4877	33	9	diodes	diode	NOUN
ap-4877	33	10	in	in	ADP
ap-4877	33	11	parallel	parallel	NOUN
ap-4877	33	12	with	with	ADP
ap-4877	33	13	sleep	sleep	NOUN
ap-4877	33	14	transistors	transistor	NOUN
ap-4877	33	15	for	for	ADP
ap-4877	33	16	the	the	DET
ap-4877	33	17	data	data	NOUN
ap-4877	33	18	retention	retention	NOUN
ap-4877	33	19	.	.	PUNCT
ap-4877	34	1	sleep	sleep	NOUN
ap-4877	34	2	mode	mode	PROPN
ap-4877	34	3	is	be	AUX
ap-4877	34	4	lost	lose	VERB
ap-4877	34	5	in	in	ADP
ap-4877	34	6	this	this	DET
ap-4877	34	7	technique	technique	NOUN
ap-4877	34	8	and	and	CCONJ
ap-4877	34	9	hence	hence	ADV
ap-4877	34	10	it	it	PRON
ap-4877	34	11	is	be	AUX
ap-4877	34	12	not	not	PART
ap-4877	34	13	suitable	suitable	ADJ
ap-4877	34	14	when	when	SCONJ
ap-4877	34	15	the	the	DET
ap-4877	34	16	circuit	circuit	NOUN
ap-4877	34	17	remains	remain	VERB
ap-4877	34	18	idle	idle	ADJ
ap-4877	34	19	for	for	ADP
ap-4877	34	20	long	long	ADJ
ap-4877	34	21	periods	period	NOUN
ap-4877	34	22	.	.	PUNCT
ap-4877	35	1	the	the	DET
ap-4877	35	2	dual	dual	ADJ
ap-4877	35	3	switch	switch	NOUN
ap-4877	35	4	approach	approach	NOUN
ap-4877	35	5	[	[	X
ap-4877	35	6	15	15	NUM
ap-4877	35	7	]	]	PUNCT
ap-4877	35	8	employs	employ	VERB
ap-4877	35	9	transistors	transistor	NOUN
ap-4877	35	10	in	in	ADP
ap-4877	35	11	parallel	parallel	NOUN
ap-4877	35	12	with	with	ADP
ap-4877	35	13	sleep	sleep	NOUN
ap-4877	35	14	transistors	transistor	NOUN
ap-4877	35	15	for	for	ADP
ap-4877	35	16	drowsy	drowsy	NOUN
ap-4877	35	17	mode	mode	NOUN
ap-4877	35	18	.	.	PUNCT
ap-4877	36	1	dual	dual	ADJ
ap-4877	36	2	diode	diode	NOUN
ap-4877	36	3	switch	switch	NOUN
ap-4877	36	4	approach	approach	NOUN
ap-4877	36	5	[	[	X
ap-4877	36	6	16	16	NUM
ap-4877	36	7	]	]	PUNCT
ap-4877	36	8	uses	use	VERB
ap-4877	36	9	a	a	DET
ap-4877	36	10	series	series	NOUN
ap-4877	36	11	combination	combination	NOUN
ap-4877	36	12	of	of	ADP
ap-4877	36	13	diode	diode	NOUN
ap-4877	36	14	and	and	CCONJ
ap-4877	36	15	transistor	transistor	NOUN
ap-4877	36	16	,	,	PUNCT
ap-4877	36	17	in	in	ADP
ap-4877	36	18	parallel	parallel	NOUN
ap-4877	36	19	with	with	ADP
ap-4877	36	20	sleep	sleep	NOUN
ap-4877	36	21	transistors	transistor	NOUN
ap-4877	36	22	for	for	ADP
ap-4877	36	23	data	datum	NOUN
ap-4877	36	24	storage	storage	NOUN
ap-4877	36	25	in	in	ADP
ap-4877	36	26	idle	idle	ADJ
ap-4877	36	27	periods	period	NOUN
ap-4877	36	28	.	.	PUNCT
ap-4877	37	1	area	area	NOUN
ap-4877	37	2	overhead	overhead	ADV
ap-4877	37	3	of	of	ADP
ap-4877	37	4	dual	dual	ADJ
ap-4877	37	5	switch	switch	NOUN
ap-4877	37	6	and	and	CCONJ
ap-4877	37	7	dual	dual	ADJ
ap-4877	37	8	diode	diode	NOUN
ap-4877	37	9	vth	vth	NOUN
ap-4877	37	10	approach	approach	NOUN
ap-4877	37	11	is	be	AUX
ap-4877	37	12	high	high	ADJ
ap-4877	37	13	because	because	SCONJ
ap-4877	37	14	of	of	ADP
ap-4877	37	15	additional	additional	ADJ
ap-4877	37	16	diodes	diode	NOUN
ap-4877	37	17	and	and	CCONJ
ap-4877	37	18	transistors	transistor	NOUN
ap-4877	37	19	.	.	PUNCT
ap-4877	38	1	in	in	ADP
ap-4877	38	2	these	these	DET
ap-4877	38	3	techniques	technique	NOUN
ap-4877	38	4	[	[	X
ap-4877	38	5	13–16	13–16	NUM
ap-4877	38	6	]	]	PUNCT
ap-4877	38	7	,	,	PUNCT
ap-4877	38	8	the	the	DET
ap-4877	38	9	charge	charge	NOUN
ap-4877	38	10	gets	get	AUX
ap-4877	38	11	stored	store	VERB
ap-4877	38	12	at	at	ADP
ap-4877	38	13	the	the	DET
ap-4877	38	14	gate	gate	NOUN
ap-4877	38	15	of	of	ADP
ap-4877	38	16	the	the	DET
ap-4877	38	17	sleep	sleep	NOUN
ap-4877	38	18	transistor	transistor	NOUN
ap-4877	38	19	during	during	ADP
ap-4877	38	20	active	active	ADJ
ap-4877	38	21	mode	mode	NOUN
ap-4877	38	22	,	,	PUNCT
ap-4877	38	23	and	and	CCONJ
ap-4877	38	24	it	it	PRON
ap-4877	38	25	is	be	AUX
ap-4877	38	26	dumped	dump	VERB
ap-4877	38	27	to	to	PART
ap-4877	38	28	ground	ground	VERB
ap-4877	38	29	and	and	CCONJ
ap-4877	38	30	wasted	waste	VERB
ap-4877	38	31	during	during	ADP
ap-4877	38	32	mode	mode	NOUN
ap-4877	38	33	transitions	transition	NOUN
ap-4877	38	34	.	.	PUNCT
ap-4877	39	1	no	no	DET
ap-4877	39	2	attempt	attempt	NOUN
ap-4877	39	3	is	be	AUX
ap-4877	39	4	made	make	VERB
ap-4877	39	5	to	to	PART
ap-4877	39	6	reuse	reuse	VERB
ap-4877	39	7	the	the	DET
ap-4877	39	8	charge	charge	NOUN
ap-4877	39	9	.	.	PUNCT
ap-4877	40	1	24	24	NUM
ap-4877	40	2	http://dx.doi.org/10.14311/ap.2019.59.0024	http://dx.doi.org/10.14311/ap.2019.59.0024	PRON
ap-4877	40	3	http://ojs.cvut.cz/ojs/index.php/ap	http://ojs.cvut.cz/ojs/index.php/ap	PROPN
ap-4877	40	4	vol	vol	NOUN
ap-4877	40	5	.	.	PUNCT
ap-4877	41	1	59	59	NUM
ap-4877	41	2	no	no	NOUN
ap-4877	41	3	.	.	PROPN
ap-4877	42	1	1/2019	1/2019	NUM
ap-4877	42	2	low	low	ADJ
ap-4877	42	3	leakage	leakage	NOUN
ap-4877	42	4	charge	charge	NOUN
ap-4877	42	5	recycling	recycling	NOUN
ap-4877	42	6	technique	technique	NOUN
ap-4877	42	7	s.	s.	PROPN
ap-4877	42	8	powergating	powergate	VERB
ap-4877	42	9	techniques	technique	NOUN
ap-4877	42	10	modes	mode	NOUN
ap-4877	42	11	data	datum	NOUN
ap-4877	42	12	charge	charge	VERB
ap-4877	42	13	no	no	PRON
ap-4877	42	14	of	of	ADP
ap-4877	42	15	operation	operation	NOUN
ap-4877	42	16	retention	retention	NOUN
ap-4877	42	17	recycling	recycle	VERB
ap-4877	42	18	1	1	NUM
ap-4877	42	19	sleep	sleep	NOUN
ap-4877	42	20	approach	approach	NOUN
ap-4877	42	21	two	two	NUM
ap-4877	42	22	no	no	DET
ap-4877	42	23	no	no	DET
ap-4877	42	24	2	2	NUM
ap-4877	42	25	sleepy	sleepy	ADJ
ap-4877	42	26	keeper	keeper	NOUN
ap-4877	42	27	approach	approach	NOUN
ap-4877	42	28	two	two	NUM
ap-4877	43	1	yes	yes	INTJ
ap-4877	44	1	no	no	DET
ap-4877	44	2	3	3	NUM
ap-4877	44	3	dual	dual	ADJ
ap-4877	44	4	diode	diode	NOUN
ap-4877	44	5	vth	vth	NOUN
ap-4877	44	6	approach	approach	NOUN
ap-4877	44	7	two	two	NUM
ap-4877	45	1	yes	yes	INTJ
ap-4877	46	1	no	no	DET
ap-4877	46	2	4	4	NUM
ap-4877	46	3	dual	dual	ADJ
ap-4877	46	4	switch	switch	NOUN
ap-4877	46	5	approach	approach	NOUN
ap-4877	46	6	three	three	NUM
ap-4877	47	1	yes	yes	INTJ
ap-4877	48	1	no	no	DET
ap-4877	48	2	5	5	NUM
ap-4877	48	3	dual	dual	ADJ
ap-4877	48	4	diode	diode	NOUN
ap-4877	48	5	switch	switch	NOUN
ap-4877	48	6	approach	approach	NOUN
ap-4877	48	7	three	three	NUM
ap-4877	49	1	yes	yes	INTJ
ap-4877	50	1	no	no	DET
ap-4877	50	2	6	6	NUM
ap-4877	50	3	sleep	sleep	NOUN
ap-4877	50	4	buffer	buffer	NOUN
ap-4877	50	5	approach	approach	NOUN
ap-4877	50	6	two	two	NUM
ap-4877	51	1	yes	yes	INTJ
ap-4877	52	1	yes	yes	INTJ
ap-4877	52	2	7	7	NUM
ap-4877	52	3	trimodal	trimodal	NOUN
ap-4877	52	4	switch	switch	NOUN
ap-4877	52	5	approach	approach	NOUN
ap-4877	52	6	three	three	NUM
ap-4877	53	1	yes	yes	INTJ
ap-4877	54	1	yes	yes	INTJ
ap-4877	54	2	8	8	NUM
ap-4877	54	3	charge	charge	NOUN
ap-4877	54	4	recycling	recycling	NOUN
ap-4877	54	5	approach	approach	NOUN
ap-4877	54	6	three	three	NUM
ap-4877	55	1	yes	yes	INTJ
ap-4877	56	1	yes	yes	INTJ
ap-4877	56	2	9	9	NUM
ap-4877	56	3	low	low	ADJ
ap-4877	56	4	leakage	leakage	NOUN
ap-4877	56	5	charge	charge	NOUN
ap-4877	56	6	recycling	recycling	NOUN
ap-4877	56	7	(	(	PUNCT
ap-4877	56	8	llcr	llcr	NOUN
ap-4877	56	9	)	)	PUNCT
ap-4877	56	10	approach	approach	NOUN
ap-4877	56	11	(	(	PUNCT
ap-4877	56	12	proposed	propose	VERB
ap-4877	56	13	)	)	PUNCT
ap-4877	56	14	three	three	NUM
ap-4877	57	1	yes	yes	INTJ
ap-4877	57	2	yes	yes	INTJ
ap-4877	57	3	table	table	NOUN
ap-4877	57	4	1	1	NUM
ap-4877	57	5	.	.	PUNCT
ap-4877	57	6	comparison	comparison	NOUN
ap-4877	57	7	between	between	ADP
ap-4877	57	8	other	other	ADJ
ap-4877	57	9	power	power	NOUN
ap-4877	57	10	gating	gate	VERB
ap-4877	57	11	techniques	technique	NOUN
ap-4877	57	12	and	and	CCONJ
ap-4877	57	13	proposed	propose	VERB
ap-4877	57	14	llcr	llcr	PROPN
ap-4877	57	15	technique	technique	NOUN
ap-4877	57	16	.	.	PUNCT
ap-4877	58	1	figure	figure	NOUN
ap-4877	58	2	1	1	NUM
ap-4877	58	3	.	.	PUNCT
ap-4877	58	4	three	three	NUM
ap-4877	58	5	-	-	PUNCT
ap-4877	58	6	dimensional	dimensional	ADJ
ap-4877	58	7	device	device	NOUN
ap-4877	58	8	structure	structure	NOUN
ap-4877	58	9	of	of	ADP
ap-4877	58	10	cntfets	cntfet	NOUN
ap-4877	58	11	[	[	X
ap-4877	58	12	8	8	NUM
ap-4877	58	13	]	]	PUNCT
ap-4877	58	14	.	.	PUNCT
ap-4877	59	1	the	the	DET
ap-4877	59	2	sleep	sleep	NOUN
ap-4877	59	3	buffer	buffer	NOUN
ap-4877	59	4	approach	approach	NOUN
ap-4877	59	5	[	[	X
ap-4877	59	6	17	17	NUM
ap-4877	59	7	]	]	PUNCT
ap-4877	59	8	increases	increase	VERB
ap-4877	59	9	the	the	DET
ap-4877	59	10	virtual	virtual	ADJ
ap-4877	59	11	ground	ground	NOUN
ap-4877	59	12	voltage	voltage	NOUN
ap-4877	59	13	by	by	ADP
ap-4877	59	14	reusing	reuse	VERB
ap-4877	59	15	the	the	DET
ap-4877	59	16	charge	charge	NOUN
ap-4877	59	17	at	at	ADP
ap-4877	59	18	the	the	DET
ap-4877	59	19	gate	gate	NOUN
ap-4877	59	20	of	of	ADP
ap-4877	59	21	the	the	DET
ap-4877	59	22	sleep	sleep	NOUN
ap-4877	59	23	transistor	transistor	NOUN
ap-4877	59	24	without	without	ADP
ap-4877	59	25	using	use	VERB
ap-4877	59	26	clamping	clamp	VERB
ap-4877	59	27	devices	device	NOUN
ap-4877	59	28	.	.	PUNCT
ap-4877	60	1	data	datum	NOUN
ap-4877	60	2	is	be	AUX
ap-4877	60	3	retained	retain	VERB
ap-4877	60	4	in	in	ADP
ap-4877	60	5	this	this	DET
ap-4877	60	6	technique	technique	NOUN
ap-4877	60	7	and	and	CCONJ
ap-4877	60	8	it	it	PRON
ap-4877	60	9	works	work	VERB
ap-4877	60	10	well	well	ADV
ap-4877	60	11	when	when	SCONJ
ap-4877	60	12	the	the	DET
ap-4877	60	13	circuit	circuit	NOUN
ap-4877	60	14	switches	switch	VERB
ap-4877	60	15	between	between	ADP
ap-4877	60	16	active	active	ADJ
ap-4877	60	17	and	and	CCONJ
ap-4877	60	18	drowsy	drowsy	NOUN
ap-4877	60	19	modes	mode	NOUN
ap-4877	60	20	frequently	frequently	ADV
ap-4877	60	21	.	.	PUNCT
ap-4877	61	1	but	but	CCONJ
ap-4877	61	2	the	the	DET
ap-4877	61	3	leakage	leakage	NOUN
ap-4877	61	4	is	be	AUX
ap-4877	61	5	high	high	ADJ
ap-4877	61	6	when	when	SCONJ
ap-4877	61	7	circuit	circuit	NOUN
ap-4877	61	8	is	be	AUX
ap-4877	61	9	idle	idle	ADJ
ap-4877	61	10	for	for	ADP
ap-4877	61	11	long	long	ADJ
ap-4877	61	12	duration	duration	NOUN
ap-4877	61	13	as	as	SCONJ
ap-4877	61	14	there	there	PRON
ap-4877	61	15	is	be	VERB
ap-4877	61	16	no	no	DET
ap-4877	61	17	sleep	sleep	NOUN
ap-4877	61	18	mode	mode	NOUN
ap-4877	61	19	in	in	ADP
ap-4877	61	20	this	this	DET
ap-4877	61	21	technique	technique	NOUN
ap-4877	61	22	.	.	PUNCT
ap-4877	62	1	the	the	DET
ap-4877	62	2	trimodal	trimodal	NOUN
ap-4877	62	3	switch	switch	NOUN
ap-4877	62	4	approach	approach	NOUN
ap-4877	62	5	[	[	X
ap-4877	62	6	18	18	NUM
ap-4877	62	7	,	,	PUNCT
ap-4877	62	8	19	19	NUM
ap-4877	62	9	]	]	PUNCT
ap-4877	62	10	also	also	ADV
ap-4877	62	11	utilizes	utilize	VERB
ap-4877	62	12	the	the	DET
ap-4877	62	13	charge	charge	NOUN
ap-4877	62	14	recycling	recycling	NOUN
ap-4877	62	15	concept	concept	NOUN
ap-4877	62	16	and	and	CCONJ
ap-4877	62	17	offers	offer	VERB
ap-4877	62	18	active	active	ADJ
ap-4877	62	19	,	,	PUNCT
ap-4877	62	20	sleep	sleep	NOUN
ap-4877	62	21	and	and	CCONJ
ap-4877	62	22	drowsy	drowsy	NOUN
ap-4877	62	23	modes	mode	NOUN
ap-4877	62	24	,	,	PUNCT
ap-4877	62	25	but	but	CCONJ
ap-4877	62	26	it	it	PRON
ap-4877	62	27	is	be	AUX
ap-4877	62	28	not	not	PART
ap-4877	62	29	efficient	efficient	ADJ
ap-4877	62	30	in	in	ADP
ap-4877	62	31	terms	term	NOUN
ap-4877	62	32	of	of	ADP
ap-4877	62	33	area	area	NOUN
ap-4877	62	34	.	.	PUNCT
ap-4877	63	1	a	a	DET
ap-4877	63	2	sneak	sneak	NOUN
ap-4877	63	3	path	path	NOUN
ap-4877	63	4	exists	exist	VERB
ap-4877	63	5	in	in	ADP
ap-4877	63	6	trimodal	trimodal	NOUN
ap-4877	63	7	switch	switch	NOUN
ap-4877	63	8	approach	approach	NOUN
ap-4877	63	9	from	from	ADP
ap-4877	63	10	the	the	DET
ap-4877	63	11	supply	supply	NOUN
ap-4877	63	12	to	to	ADP
ap-4877	63	13	the	the	DET
ap-4877	63	14	ground	ground	NOUN
ap-4877	63	15	through	through	ADP
ap-4877	63	16	the	the	DET
ap-4877	63	17	sleep	sleep	NOUN
ap-4877	63	18	and	and	CCONJ
ap-4877	63	19	drowsy	drowsy	NOUN
ap-4877	63	20	transistors	transistor	NOUN
ap-4877	63	21	which	which	PRON
ap-4877	63	22	increases	increase	VERB
ap-4877	63	23	the	the	DET
ap-4877	63	24	leakage	leakage	NOUN
ap-4877	63	25	.	.	PUNCT
ap-4877	64	1	the	the	DET
ap-4877	64	2	charge	charge	NOUN
ap-4877	64	3	recycling	recycling	NOUN
ap-4877	64	4	technique	technique	NOUN
ap-4877	64	5	[	[	X
ap-4877	64	6	20	20	NUM
ap-4877	64	7	]	]	PUNCT
ap-4877	64	8	reuses	reuse	VERB
ap-4877	64	9	the	the	DET
ap-4877	64	10	charge	charge	NOUN
ap-4877	64	11	at	at	ADP
ap-4877	64	12	the	the	DET
ap-4877	64	13	gate	gate	NOUN
ap-4877	64	14	of	of	ADP
ap-4877	64	15	the	the	DET
ap-4877	64	16	sleep	sleep	NOUN
ap-4877	64	17	transistor	transistor	NOUN
ap-4877	64	18	with	with	ADP
ap-4877	64	19	the	the	DET
ap-4877	64	20	help	help	NOUN
ap-4877	64	21	of	of	ADP
ap-4877	64	22	a	a	DET
ap-4877	64	23	pass	pass	NOUN
ap-4877	64	24	transistor	transistor	NOUN
ap-4877	64	25	during	during	ADP
ap-4877	64	26	mode	mode	NOUN
ap-4877	64	27	transitions	transition	NOUN
ap-4877	64	28	but	but	CCONJ
ap-4877	64	29	the	the	DET
ap-4877	64	30	leakage	leakage	NOUN
ap-4877	64	31	power	power	NOUN
ap-4877	64	32	is	be	AUX
ap-4877	64	33	soaring	soar	VERB
ap-4877	64	34	.	.	PUNCT
ap-4877	65	1	in	in	ADP
ap-4877	65	2	this	this	DET
ap-4877	65	3	paper	paper	NOUN
ap-4877	65	4	,	,	PUNCT
ap-4877	65	5	an	an	DET
ap-4877	65	6	efficient	efficient	ADJ
ap-4877	65	7	low	low	ADJ
ap-4877	65	8	leakage	leakage	NOUN
ap-4877	65	9	charge	charge	NOUN
ap-4877	65	10	recycling	recycling	NOUN
ap-4877	65	11	(	(	PUNCT
ap-4877	65	12	llcr	llcr	NOUN
ap-4877	65	13	)	)	PUNCT
ap-4877	65	14	power	power	NOUN
ap-4877	65	15	gating	gating	NOUN
ap-4877	65	16	technique	technique	NOUN
ap-4877	65	17	is	be	AUX
ap-4877	65	18	proposed	propose	VERB
ap-4877	65	19	,	,	PUNCT
ap-4877	65	20	which	which	PRON
ap-4877	65	21	offers	offer	VERB
ap-4877	65	22	three	three	NUM
ap-4877	65	23	modes	mode	NOUN
ap-4877	65	24	of	of	ADP
ap-4877	65	25	operation	operation	NOUN
ap-4877	65	26	,	,	PUNCT
ap-4877	65	27	less	less	ADJ
ap-4877	65	28	area	area	NOUN
ap-4877	65	29	and	and	CCONJ
ap-4877	65	30	high	high	ADJ
ap-4877	65	31	power	power	NOUN
ap-4877	65	32	reduction	reduction	NOUN
ap-4877	65	33	based	base	VERB
ap-4877	65	34	on	on	ADP
ap-4877	65	35	charge	charge	NOUN
ap-4877	65	36	recycling	recycling	NOUN
ap-4877	65	37	concept	concept	NOUN
ap-4877	65	38	.	.	PUNCT
ap-4877	66	1	table	table	NOUN
ap-4877	66	2	1	1	NUM
ap-4877	66	3	presents	present	VERB
ap-4877	66	4	the	the	DET
ap-4877	66	5	comparison	comparison	NOUN
ap-4877	66	6	between	between	ADP
ap-4877	66	7	the	the	DET
ap-4877	66	8	conventional	conventional	ADJ
ap-4877	66	9	power	power	NOUN
ap-4877	66	10	gating	gate	VERB
ap-4877	66	11	methods	method	NOUN
ap-4877	66	12	and	and	CCONJ
ap-4877	66	13	the	the	DET
ap-4877	66	14	proposed	propose	VERB
ap-4877	66	15	llcr	llcr	NOUN
ap-4877	66	16	technique	technique	NOUN
ap-4877	66	17	.	.	PUNCT
ap-4877	67	1	2.2	2.2	NUM
ap-4877	67	2	.	.	PUNCT
ap-4877	67	3	carbon	carbon	NOUN
ap-4877	67	4	nanotubes	nanotube	NOUN
ap-4877	67	5	the	the	DET
ap-4877	67	6	cntfet	cntfet	NOUN
ap-4877	67	7	has	have	VERB
ap-4877	67	8	four	four	NUM
ap-4877	67	9	terminals	terminal	NOUN
ap-4877	67	10	similar	similar	ADJ
ap-4877	67	11	to	to	ADP
ap-4877	67	12	the	the	DET
ap-4877	67	13	traditional	traditional	ADJ
ap-4877	67	14	silicon	silicon	NOUN
ap-4877	67	15	mosfet	mosfet	NOUN
ap-4877	67	16	device	device	NOUN
ap-4877	67	17	.	.	PUNCT
ap-4877	68	1	figure	figure	NOUN
ap-4877	68	2	1	1	NUM
ap-4877	68	3	shows	show	VERB
ap-4877	68	4	the	the	DET
ap-4877	68	5	three	three	NUM
ap-4877	68	6	-	-	PUNCT
ap-4877	68	7	dimensional	dimensional	ADJ
ap-4877	68	8	device	device	NOUN
ap-4877	68	9	structure	structure	NOUN
ap-4877	68	10	of	of	ADP
ap-4877	68	11	cntfets	cntfet	NOUN
ap-4877	68	12	with	with	ADP
ap-4877	68	13	multiple	multiple	ADJ
ap-4877	68	14	channels	channel	NOUN
ap-4877	68	15	and	and	CCONJ
ap-4877	68	16	related	relate	VERB
ap-4877	68	17	parasitic	parasitic	ADJ
ap-4877	68	18	gate	gate	NOUN
ap-4877	68	19	capacitances	capacitance	NOUN
ap-4877	68	20	.	.	PUNCT
ap-4877	69	1	in	in	ADP
ap-4877	69	2	figure	figure	NOUN
ap-4877	69	3	1	1	NUM
ap-4877	69	4	,	,	PUNCT
ap-4877	69	5	three	three	NUM
ap-4877	69	6	cntfets	cntfet	NOUN
ap-4877	69	7	are	be	AUX
ap-4877	69	8	fabricated	fabricate	VERB
ap-4877	69	9	along	along	ADP
ap-4877	69	10	one	one	NUM
ap-4877	69	11	single	single	ADJ
ap-4877	69	12	carbon	carbon	NOUN
ap-4877	69	13	nanotube	nanotube	NOUN
ap-4877	69	14	(	(	PUNCT
ap-4877	69	15	cnt	cnt	PROPN
ap-4877	69	16	)	)	PUNCT
ap-4877	69	17	.	.	PUNCT
ap-4877	70	1	undoped	undoped	ADJ
ap-4877	70	2	semiconducting	semiconducting	NOUN
ap-4877	70	3	nanotubes	nanotube	NOUN
ap-4877	70	4	are	be	AUX
ap-4877	70	5	placed	place	VERB
ap-4877	70	6	under	under	ADP
ap-4877	70	7	the	the	DET
ap-4877	70	8	gate	gate	NOUN
ap-4877	70	9	as	as	ADP
ap-4877	70	10	channel	channel	NOUN
ap-4877	70	11	region	region	NOUN
ap-4877	70	12	and	and	CCONJ
ap-4877	70	13	heavily	heavily	ADV
ap-4877	70	14	doped	dope	VERB
ap-4877	70	15	cnt	cnt	ADJ
ap-4877	70	16	segments	segment	NOUN
ap-4877	70	17	are	be	AUX
ap-4877	70	18	placed	place	VERB
ap-4877	70	19	between	between	ADP
ap-4877	70	20	the	the	DET
ap-4877	70	21	gate	gate	NOUN
ap-4877	70	22	and	and	CCONJ
ap-4877	70	23	the	the	DET
ap-4877	70	24	source	source	NOUN
ap-4877	70	25	/	/	SYM
ap-4877	70	26	drain	drain	NOUN
ap-4877	70	27	to	to	PART
ap-4877	70	28	allow	allow	VERB
ap-4877	70	29	low	low	ADJ
ap-4877	70	30	series	series	PROPN
ap-4877	70	31	resistance	resistance	NOUN
ap-4877	70	32	in	in	ADP
ap-4877	70	33	the	the	DET
ap-4877	70	34	on	on	ADP
ap-4877	70	35	-	-	PUNCT
ap-4877	70	36	state	state	NOUN
ap-4877	71	1	[	[	X
ap-4877	71	2	21–24	21–24	NUM
ap-4877	71	3	]	]	X
ap-4877	71	4	.	.	PUNCT
ap-4877	72	1	the	the	DET
ap-4877	72	2	device	device	NOUN
ap-4877	72	3	is	be	AUX
ap-4877	72	4	electrostatically	electrostatically	ADV
ap-4877	72	5	turned	turn	VERB
ap-4877	72	6	‘	'	PUNCT
ap-4877	72	7	on	on	ADP
ap-4877	72	8	’	'	PUNCT
ap-4877	72	9	or	or	CCONJ
ap-4877	72	10	‘	'	PUNCT
ap-4877	72	11	off	off	ADV
ap-4877	72	12	’	'	PUNCT
ap-4877	72	13	by	by	ADP
ap-4877	72	14	controlling	control	VERB
ap-4877	72	15	the	the	DET
ap-4877	72	16	gate	gate	NOUN
ap-4877	72	17	potential	potential	NOUN
ap-4877	72	18	.	.	PUNCT
ap-4877	73	1	the	the	DET
ap-4877	73	2	threshold	threshold	NOUN
ap-4877	73	3	voltage	voltage	NOUN
ap-4877	73	4	of	of	ADP
ap-4877	73	5	the	the	DET
ap-4877	73	6	cnt	cnt	PROPN
ap-4877	73	7	channel	channel	PROPN
ap-4877	73	8	varies	vary	VERB
ap-4877	73	9	in	in	ADP
ap-4877	73	10	accordance	accordance	NOUN
ap-4877	73	11	with	with	ADP
ap-4877	73	12	chirality	chirality	NOUN
ap-4877	73	13	and	and	CCONJ
ap-4877	73	14	diameter	diameter	NOUN
ap-4877	73	15	.	.	PUNCT
ap-4877	74	1	an	an	DET
ap-4877	74	2	equivalent	equivalent	ADJ
ap-4877	74	3	circuit	circuit	NOUN
ap-4877	74	4	model	model	NOUN
ap-4877	74	5	for	for	ADP
ap-4877	74	6	the	the	DET
ap-4877	74	7	channel	channel	NOUN
ap-4877	74	8	region	region	NOUN
ap-4877	74	9	of	of	ADP
ap-4877	74	10	a	a	DET
ap-4877	74	11	basic	basic	ADJ
ap-4877	74	12	cntfet	cntfet	NOUN
ap-4877	74	13	is	be	AUX
ap-4877	74	14	shown	show	VERB
ap-4877	74	15	in	in	ADP
ap-4877	74	16	figure	figure	NOUN
ap-4877	74	17	2	2	NUM
ap-4877	74	18	.	.	PUNCT
ap-4877	75	1	the	the	DET
ap-4877	75	2	current	current	ADJ
ap-4877	75	3	sources	source	NOUN
ap-4877	75	4	modelled	model	VERB
ap-4877	75	5	in	in	ADP
ap-4877	75	6	the	the	DET
ap-4877	75	7	equivalent	equivalent	ADJ
ap-4877	75	8	circuit	circuit	NOUN
ap-4877	75	9	are	be	AUX
ap-4877	75	10	be25	be25	PROPN
ap-4877	75	11	manickam	manickam	PROPN
ap-4877	75	12	kavitha	kavitha	PROPN
ap-4877	75	13	,	,	PUNCT
ap-4877	75	14	alagar	alagar	PROPN
ap-4877	75	15	m.	m.	PROPN
ap-4877	75	16	kalpana	kalpana	PROPN
ap-4877	75	17	acta	acta	PROPN
ap-4877	75	18	polytechnica	polytechnica	PROPN
ap-4877	75	19	figure	figure	NOUN
ap-4877	75	20	2	2	NUM
ap-4877	75	21	.	.	NOUN
ap-4877	75	22	six	six	NUM
ap-4877	75	23	-	-	PUNCT
ap-4877	75	24	capacitor	capacitor	NOUN
ap-4877	75	25	equivalent	equivalent	ADJ
ap-4877	75	26	circuit	circuit	NOUN
ap-4877	75	27	model	model	NOUN
ap-4877	75	28	for	for	ADP
ap-4877	75	29	the	the	DET
ap-4877	75	30	intrinsic	intrinsic	ADJ
ap-4877	75	31	channel	channel	NOUN
ap-4877	75	32	region	region	NOUN
ap-4877	75	33	of	of	ADP
ap-4877	75	34	cntfet	cntfet	NOUN
ap-4877	75	35	[	[	X
ap-4877	75	36	8	8	NUM
ap-4877	75	37	]	]	PUNCT
ap-4877	75	38	.	.	PUNCT
ap-4877	76	1	cause	cause	NOUN
ap-4877	76	2	of	of	ADP
ap-4877	76	3	:	:	PUNCT
ap-4877	76	4	(	(	PUNCT
ap-4877	76	5	i	i	NOUN
ap-4877	76	6	)	)	PUNCT
ap-4877	76	7	the	the	DET
ap-4877	76	8	semiconducting	semiconducte	VERB
ap-4877	76	9	sub	sub	ADJ
ap-4877	76	10	-	-	ADJ
ap-4877	76	11	bands	bands	ADJ
ap-4877	76	12	thermionic	thermionic	ADJ
ap-4877	76	13	current	current	ADJ
ap-4877	76	14	(	(	PUNCT
ap-4877	76	15	isemi	isemi	NOUN
ap-4877	76	16	)	)	PUNCT
ap-4877	76	17	;	;	PUNCT
ap-4877	76	18	(	(	PUNCT
ap-4877	76	19	ii	ii	X
ap-4877	76	20	)	)	PUNCT
ap-4877	76	21	the	the	DET
ap-4877	76	22	metallic	metallic	ADJ
ap-4877	76	23	sub	sub	ADJ
ap-4877	76	24	-	-	ADJ
ap-4877	76	25	bands	bands	ADJ
ap-4877	76	26	current	current	ADJ
ap-4877	76	27	(	(	PUNCT
ap-4877	76	28	imetal	imetal	NOUN
ap-4877	76	29	)	)	PUNCT
ap-4877	76	30	;	;	PUNCT
ap-4877	76	31	and	and	CCONJ
ap-4877	76	32	(	(	PUNCT
ap-4877	76	33	iii	iii	X
ap-4877	76	34	)	)	PUNCT
ap-4877	76	35	the	the	DET
ap-4877	76	36	band	band	NOUN
ap-4877	76	37	to	to	PART
ap-4877	76	38	band	band	NOUN
ap-4877	76	39	tunnelling	tunnelling	NOUN
ap-4877	76	40	(	(	PUNCT
ap-4877	76	41	btbt	btbt	NOUN
ap-4877	76	42	)	)	PUNCT
ap-4877	76	43	leakage	leakage	NOUN
ap-4877	76	44	current	current	ADJ
ap-4877	76	45	(	(	PUNCT
ap-4877	76	46	ibtbt	ibtbt	PROPN
ap-4877	76	47	)	)	PUNCT
ap-4877	77	1	[	[	X
ap-4877	77	2	8	8	NUM
ap-4877	77	3	]	]	PUNCT
ap-4877	77	4	.	.	PUNCT
ap-4877	78	1	the	the	DET
ap-4877	78	2	thermionic	thermionic	ADJ
ap-4877	78	3	current	current	NOUN
ap-4877	78	4	of	of	ADP
ap-4877	78	5	the	the	DET
ap-4877	78	6	semi	semi	ADV
ap-4877	78	7	conducting	conduct	VERB
ap-4877	78	8	sub	sub	NOUN
ap-4877	78	9	-	-	ADJ
ap-4877	78	10	bands	band	NOUN
ap-4877	78	11	is	be	AUX
ap-4877	78	12	given	give	VERB
ap-4877	78	13	by	by	ADP
ap-4877	78	14	isemi(vch	isemi(vch	NOUN
ap-4877	78	15	,	,	PUNCT
ap-4877	78	16	ds	ds	PROPN
ap-4877	78	17	,	,	PUNCT
ap-4877	78	18	vch	vch	PROPN
ap-4877	78	19	,	,	PUNCT
ap-4877	78	20	gs	gs	NOUN
ap-4877	78	21	)	)	PUNCT
ap-4877	78	22	=	=	SYM
ap-4877	79	1	4e2	4e2	NUM
ap-4877	79	2	h	h	NOUN
ap-4877	79	3	m∑	m∑	VERB
ap-4877	79	4	m=1	m=1	PROPN
ap-4877	79	5	tm	tm	PROPN
ap-4877	79	6	(	(	PUNCT
ap-4877	79	7	vch	vch	PROPN
ap-4877	79	8	,	,	PUNCT
ap-4877	79	9	ds	ds	PROPN
ap-4877	79	10	+	+	CCONJ
ap-4877	79	11	kt	kt	PROPN
ap-4877	79	12	e	e	PROPN
ap-4877	79	13	ln	ln	NOUN
ap-4877	79	14	1	1	NUM
ap-4877	79	15	+	+	CCONJ
ap-4877	79	16	e	e	X
ap-4877	79	17	em,0−∆φb	em,0−∆φb	PROPN
ap-4877	79	18	kt	kt	ADP
ap-4877	79	19	1	1	NUM
ap-4877	79	20	+	+	CCONJ
ap-4877	79	21	e	e	PROPN
ap-4877	79	22	em,0−∆φb+evch	em,0−∆φb+evch	PROPN
ap-4877	79	23	,	,	PUNCT
ap-4877	79	24	ds	ds	ADJ
ap-4877	79	25	kt	kt	PROPN
ap-4877	79	26	)	)	PUNCT
ap-4877	79	27	(	(	PUNCT
ap-4877	79	28	1	1	X
ap-4877	79	29	)	)	PUNCT
ap-4877	79	30	where	where	SCONJ
ap-4877	79	31	,	,	PUNCT
ap-4877	79	32	∆φb	∆φb	PROPN
ap-4877	79	33	is	be	AUX
ap-4877	79	34	the	the	DET
ap-4877	79	35	channel	channel	NOUN
ap-4877	79	36	surface	surface	NOUN
ap-4877	79	37	potential	potential	ADJ
ap-4877	79	38	charge	charge	NOUN
ap-4877	79	39	,	,	PUNCT
ap-4877	79	40	vch	vch	PROPN
ap-4877	79	41	,	,	PUNCT
ap-4877	79	42	ds	ds	PROPN
ap-4877	79	43	and	and	CCONJ
ap-4877	79	44	vch	vch	PROPN
ap-4877	79	45	,	,	PUNCT
ap-4877	79	46	gs	gs	PROPN
ap-4877	79	47	are	be	AUX
ap-4877	79	48	the	the	DET
ap-4877	79	49	fermi	fermi	NOUN
ap-4877	79	50	potential	potential	ADJ
ap-4877	79	51	differences	difference	NOUN
ap-4877	79	52	within	within	ADP
ap-4877	79	53	the	the	DET
ap-4877	79	54	channel	channel	NOUN
ap-4877	79	55	,	,	PUNCT
ap-4877	79	56	m	m	VERB
ap-4877	79	57	is	be	AUX
ap-4877	79	58	the	the	DET
ap-4877	79	59	number	number	NOUN
ap-4877	79	60	of	of	ADP
ap-4877	79	61	sub	sub	NOUN
ap-4877	79	62	-	-	NOUN
ap-4877	79	63	bands	band	NOUN
ap-4877	79	64	,	,	PUNCT
ap-4877	79	65	e	e	X
ap-4877	79	66	is	be	AUX
ap-4877	79	67	the	the	DET
ap-4877	79	68	unit	unit	NOUN
ap-4877	79	69	electronic	electronic	ADJ
ap-4877	79	70	charge	charge	NOUN
ap-4877	79	71	,	,	PUNCT
ap-4877	79	72	em,0	em,0	PROPN
ap-4877	79	73	is	be	AUX
ap-4877	79	74	the	the	DET
ap-4877	79	75	half	half	ADJ
ap-4877	79	76	band	band	NOUN
ap-4877	79	77	gap	gap	NOUN
ap-4877	79	78	of	of	ADP
ap-4877	79	79	the	the	DET
ap-4877	79	80	mth	mth	NOUN
ap-4877	79	81	sub	sub	NOUN
ap-4877	79	82	-	-	ADJ
ap-4877	79	83	band	band	ADJ
ap-4877	79	84	,	,	PUNCT
ap-4877	79	85	t	t	PROPN
ap-4877	79	86	is	be	AUX
ap-4877	79	87	the	the	DET
ap-4877	79	88	temperature	temperature	NOUN
ap-4877	79	89	in	in	ADP
ap-4877	79	90	kelvins	kelvin	NOUN
ap-4877	79	91	,	,	PUNCT
ap-4877	79	92	tm	tm	PROPN
ap-4877	79	93	is	be	AUX
ap-4877	79	94	the	the	DET
ap-4877	79	95	transmission	transmission	NOUN
ap-4877	79	96	probability	probability	NOUN
ap-4877	79	97	and	and	CCONJ
ap-4877	79	98	k	k	PROPN
ap-4877	79	99	is	be	AUX
ap-4877	79	100	the	the	DET
ap-4877	79	101	boltzmann	boltzmann	PROPN
ap-4877	79	102	constant	constant	PROPN
ap-4877	79	103	.	.	PUNCT
ap-4877	80	1	a	a	DET
ap-4877	80	2	voltage	voltage	NOUN
ap-4877	80	3	controlled	control	VERB
ap-4877	80	4	current	current	ADJ
ap-4877	80	5	source	source	NOUN
ap-4877	80	6	ibtbt	ibtbt	NOUN
ap-4877	80	7	in	in	ADP
ap-4877	80	8	the	the	DET
ap-4877	80	9	device	device	NOUN
ap-4877	80	10	model	model	NOUN
ap-4877	80	11	is	be	AUX
ap-4877	80	12	to	to	PART
ap-4877	80	13	evaluate	evaluate	VERB
ap-4877	80	14	the	the	DET
ap-4877	80	15	device	device	NOUN
ap-4877	80	16	sub	sub	ADJ
ap-4877	80	17	-	-	ADJ
ap-4877	80	18	threshold	threshold	ADJ
ap-4877	80	19	behaviour	behaviour	NOUN
ap-4877	80	20	and	and	CCONJ
ap-4877	80	21	the	the	DET
ap-4877	80	22	static	static	ADJ
ap-4877	80	23	power	power	NOUN
ap-4877	80	24	dissipation	dissipation	NOUN
ap-4877	80	25	[	[	X
ap-4877	80	26	8	8	NUM
ap-4877	80	27	]	]	PUNCT
ap-4877	80	28	.	.	PUNCT
ap-4877	81	1	bandto	bandto	ADJ
ap-4877	81	2	-	-	PUNCT
ap-4877	81	3	band	band	NOUN
ap-4877	81	4	tunnelling	tunnelling	NOUN
ap-4877	81	5	(	(	PUNCT
ap-4877	81	6	btbt	btbt	NOUN
ap-4877	81	7	)	)	PUNCT
ap-4877	81	8	current	current	NOUN
ap-4877	81	9	turns	turn	VERB
ap-4877	81	10	out	out	ADP
ap-4877	81	11	to	to	PART
ap-4877	81	12	be	be	AUX
ap-4877	81	13	a	a	DET
ap-4877	81	14	significant	significant	ADJ
ap-4877	81	15	component	component	NOUN
ap-4877	81	16	in	in	ADP
ap-4877	81	17	the	the	DET
ap-4877	81	18	sub	sub	ADJ
ap-4877	81	19	-	-	ADJ
ap-4877	81	20	threshold	threshold	ADJ
ap-4877	81	21	region	region	NOUN
ap-4877	81	22	.	.	PUNCT
ap-4877	82	1	assuming	assume	VERB
ap-4877	82	2	a	a	DET
ap-4877	82	3	ballistic	ballistic	ADJ
ap-4877	82	4	transport	transport	NOUN
ap-4877	82	5	for	for	ADP
ap-4877	82	6	the	the	DET
ap-4877	82	7	tunnelling	tunnelling	NOUN
ap-4877	82	8	process	process	NOUN
ap-4877	82	9	,	,	PUNCT
ap-4877	82	10	the	the	DET
ap-4877	82	11	band	band	NOUN
ap-4877	82	12	-	-	PUNCT
ap-4877	82	13	to	to	ADP
ap-4877	82	14	-	-	PUNCT
ap-4877	82	15	band	band	NOUN
ap-4877	82	16	tunnelling	tunnelling	NOUN
ap-4877	82	17	current	current	NOUN
ap-4877	82	18	is	be	AUX
ap-4877	82	19	approximately	approximately	ADV
ap-4877	82	20	given	give	VERB
ap-4877	82	21	by	by	ADP
ap-4877	82	22	the	the	DET
ap-4877	82	23	btbt	btbt	ADJ
ap-4877	82	24	tunnelling	tunnelling	NOUN
ap-4877	82	25	probability	probability	NOUN
ap-4877	82	26	(	(	PUNCT
ap-4877	82	27	tbtbt	tbtbt	PROPN
ap-4877	82	28	)	)	PUNCT
ap-4877	82	29	times	time	NOUN
ap-4877	82	30	the	the	DET
ap-4877	82	31	maximum	maximum	ADJ
ap-4877	82	32	possible	possible	ADJ
ap-4877	82	33	tunnelling	tunnelling	NOUN
ap-4877	82	34	current	current	ADJ
ap-4877	82	35	integrating	integrating	NOUN
ap-4877	82	36	from	from	ADP
ap-4877	82	37	the	the	DET
ap-4877	82	38	conduction	conduction	NOUN
ap-4877	82	39	band	band	NOUN
ap-4877	82	40	at	at	ADP
ap-4877	82	41	the	the	DET
ap-4877	82	42	drain	drain	NOUN
ap-4877	82	43	side	side	NOUN
ap-4877	82	44	up	up	ADP
ap-4877	82	45	to	to	ADP
ap-4877	82	46	the	the	DET
ap-4877	82	47	valance	valance	NOUN
ap-4877	82	48	band	band	NOUN
ap-4877	82	49	at	at	ADP
ap-4877	82	50	the	the	DET
ap-4877	82	51	source	source	NOUN
ap-4877	82	52	side	side	NOUN
ap-4877	82	53	.	.	PUNCT
ap-4877	83	1	ibtbt	ibtbt	PROPN
ap-4877	83	2	=	=	PROPN
ap-4877	83	3	4e	4e	PROPN
ap-4877	83	4	h	h	PROPN
ap-4877	83	5	kt	kt	PROPN
ap-4877	83	6	m∑	m∑	PROPN
ap-4877	84	1	m=1	m=1	PROPN
ap-4877	84	2	tbtbt	tbtbt	PROPN
ap-4877	84	3	ln	ln	ADJ
ap-4877	84	4	1	1	NUM
ap-4877	84	5	+	+	CCONJ
ap-4877	84	6	e	e	NOUN
ap-4877	84	7	evch	evch	NOUN
ap-4877	84	8	,	,	PUNCT
ap-4877	84	9	ds−em,0−ef	ds−em,0−ef	PROPN
ap-4877	84	10	kt	kt	PROPN
ap-4877	84	11	1	1	NUM
ap-4877	84	12	+	+	CCONJ
ap-4877	84	13	e	e	NOUN
ap-4877	84	14	em,0−ef	em,0−ef	X
ap-4877	84	15	kt	kt	PROPN
ap-4877	84	16	×	×	PROPN
ap-4877	84	17	max{evch	max{evch	ADJ
ap-4877	84	18	,	,	PUNCT
ap-4877	84	19	ds	ds	ADJ
ap-4877	84	20	−	−	NOUN
ap-4877	84	21	2em,0	2em,0	PROPN
ap-4877	84	22	,	,	PUNCT
ap-4877	84	23	0	0	NUM
ap-4877	84	24	}	}	PUNCT
ap-4877	84	25	evch	evch	ADJ
ap-4877	84	26	,	,	PUNCT
ap-4877	84	27	ds	ds	ADJ
ap-4877	84	28	−	−	PROPN
ap-4877	84	29	2em,0	2em,0	PROPN
ap-4877	84	30	,	,	PUNCT
ap-4877	84	31	(	(	PUNCT
ap-4877	84	32	2	2	X
ap-4877	84	33	)	)	PUNCT
ap-4877	84	34	where	where	SCONJ
ap-4877	84	35	tbtbt	tbtbt	PROPN
ap-4877	84	36	is	be	AUX
ap-4877	84	37	the	the	DET
ap-4877	84	38	wentzel	wentzel	ADJ
ap-4877	84	39	–	–	PUNCT
ap-4877	84	40	kramers	kramer	NOUN
ap-4877	84	41	–	–	PUNCT
ap-4877	84	42	brillouinlike	brillouinlike	ADJ
ap-4877	84	43	transmission	transmission	NOUN
ap-4877	84	44	coefficient	coefficient	NOUN
ap-4877	84	45	and	and	CCONJ
ap-4877	84	46	ef	ef	PROPN
ap-4877	84	47	is	be	AUX
ap-4877	84	48	the	the	DET
ap-4877	84	49	fermi	fermi	NOUN
ap-4877	84	50	level	level	NOUN
ap-4877	84	51	of	of	ADP
ap-4877	84	52	the	the	DET
ap-4877	84	53	doped	dope	VERB
ap-4877	84	54	source	source	NOUN
ap-4877	84	55	/	/	SYM
ap-4877	84	56	drain	drain	NOUN
ap-4877	84	57	in	in	ADP
ap-4877	84	58	electron	electron	NOUN
ap-4877	84	59	-	-	PUNCT
ap-4877	84	60	volt	volt	NOUN
ap-4877	84	61	units	unit	NOUN
ap-4877	84	62	.	.	PUNCT
ap-4877	85	1	in	in	ADP
ap-4877	85	2	metallic	metallic	ADJ
ap-4877	85	3	nanotubes	nanotube	NOUN
ap-4877	85	4	,	,	PUNCT
ap-4877	85	5	the	the	DET
ap-4877	85	6	sub	sub	ADJ
ap-4877	85	7	-	-	ADJ
ap-4877	85	8	band	band	ADJ
ap-4877	85	9	current	current	ADJ
ap-4877	85	10	comprises	comprise	VERB
ap-4877	85	11	both	both	CCONJ
ap-4877	85	12	the	the	DET
ap-4877	85	13	hole	hole	NOUN
ap-4877	85	14	and	and	CCONJ
ap-4877	85	15	electron	electron	NOUN
ap-4877	85	16	currents	current	NOUN
ap-4877	85	17	[	[	X
ap-4877	85	18	8	8	NUM
ap-4877	85	19	]	]	PUNCT
ap-4877	85	20	.	.	PUNCT
ap-4877	86	1	the	the	DET
ap-4877	86	2	equation	equation	NOUN
ap-4877	86	3	for	for	ADP
ap-4877	86	4	imetal	imetal	ADJ
ap-4877	86	5	figure	figure	NOUN
ap-4877	86	6	3	3	NUM
ap-4877	86	7	.	.	NOUN
ap-4877	86	8	v	v	NUM
ap-4877	86	9	–	–	PUNCT
ap-4877	86	10	i	i	PRON
ap-4877	86	11	characteristics	characteristic	NOUN
ap-4877	86	12	of	of	ADP
ap-4877	86	13	n	n	CCONJ
ap-4877	86	14	-	-	PUNCT
ap-4877	86	15	cntfet	cntfet	NOUN
ap-4877	86	16	.	.	PUNCT
ap-4877	87	1	can	can	AUX
ap-4877	87	2	be	be	AUX
ap-4877	87	3	expressed	express	VERB
ap-4877	87	4	as	as	ADP
ap-4877	87	5	imetal	imetal	ADJ
ap-4877	87	6	=	=	SYM
ap-4877	87	7	(	(	PUNCT
ap-4877	87	8	1−m0)4e2	1−m0)4e2	NUM
ap-4877	87	9	h	h	NOUN
ap-4877	87	10	tmetalvch	tmetalvch	PROPN
ap-4877	87	11	,	,	PUNCT
ap-4877	87	12	ds	ds	PROPN
ap-4877	87	13	,	,	PUNCT
ap-4877	87	14	(	(	PUNCT
ap-4877	87	15	3	3	X
ap-4877	87	16	)	)	PUNCT
ap-4877	87	17	where	where	SCONJ
ap-4877	87	18	tmetal	tmetal	NOUN
ap-4877	87	19	is	be	AUX
ap-4877	87	20	the	the	DET
ap-4877	87	21	transmission	transmission	NOUN
ap-4877	87	22	probability	probability	NOUN
ap-4877	87	23	and	and	CCONJ
ap-4877	87	24	m0	m0	NOUN
ap-4877	87	25	is	be	AUX
ap-4877	87	26	the	the	DET
ap-4877	87	27	zeroth	zeroth	ADJ
ap-4877	87	28	sub	sub	ADJ
ap-4877	87	29	-	-	ADJ
ap-4877	87	30	band	band	NOUN
ap-4877	87	31	reserved	reserve	VERB
ap-4877	87	32	for	for	ADP
ap-4877	87	33	the	the	DET
ap-4877	87	34	metallic	metallic	ADJ
ap-4877	87	35	subband	subband	NOUN
ap-4877	87	36	.	.	PUNCT
ap-4877	88	1	equation	equation	NOUN
ap-4877	88	2	(	(	PUNCT
ap-4877	88	3	3	3	X
ap-4877	88	4	)	)	PUNCT
ap-4877	88	5	confirms	confirm	VERB
ap-4877	88	6	that	that	SCONJ
ap-4877	88	7	imetal	imetal	NOUN
ap-4877	88	8	does	do	AUX
ap-4877	88	9	not	not	PART
ap-4877	88	10	depend	depend	VERB
ap-4877	88	11	upon	upon	SCONJ
ap-4877	88	12	the	the	DET
ap-4877	88	13	surface	surface	NOUN
ap-4877	88	14	-	-	PUNCT
ap-4877	88	15	potential	potential	ADJ
ap-4877	88	16	change	change	NOUN
ap-4877	88	17	∆φb	∆φb	X
ap-4877	88	18	and	and	CCONJ
ap-4877	88	19	it	it	PRON
ap-4877	88	20	depends	depend	VERB
ap-4877	88	21	only	only	ADV
ap-4877	88	22	on	on	ADP
ap-4877	88	23	vch	vch	PROPN
ap-4877	88	24	,	,	PUNCT
ap-4877	88	25	ds	ds	ADJ
ap-4877	88	26	and	and	CCONJ
ap-4877	88	27	tmetal	tmetal	ADJ
ap-4877	88	28	.	.	PUNCT
ap-4877	89	1	3	3	X
ap-4877	89	2	.	.	X
ap-4877	89	3	llcr	llcr	PROPN
ap-4877	89	4	power	power	NOUN
ap-4877	89	5	gating	gate	VERB
ap-4877	89	6	structure	structure	NOUN
ap-4877	89	7	figures	figure	NOUN
ap-4877	89	8	3	3	NUM
ap-4877	89	9	and	and	CCONJ
ap-4877	89	10	4	4	NUM
ap-4877	89	11	show	show	VERB
ap-4877	89	12	the	the	DET
ap-4877	89	13	simulated	simulate	VERB
ap-4877	89	14	voltage	voltage	NOUN
ap-4877	89	15	(	(	PUNCT
ap-4877	89	16	vgs	vgs	NOUN
ap-4877	89	17	)	)	PUNCT
ap-4877	89	18	–	–	PUNCT
ap-4877	89	19	current	current	ADJ
ap-4877	89	20	(	(	PUNCT
ap-4877	89	21	ids	id	NOUN
ap-4877	89	22	)	)	PUNCT
ap-4877	89	23	characteristics	characteristic	NOUN
ap-4877	89	24	of	of	ADP
ap-4877	89	25	the	the	DET
ap-4877	89	26	cntfets	cntfet	NOUN
ap-4877	89	27	.	.	PUNCT
ap-4877	90	1	it	it	PRON
ap-4877	90	2	is	be	AUX
ap-4877	90	3	clear	clear	ADJ
ap-4877	90	4	that	that	SCONJ
ap-4877	90	5	the	the	DET
ap-4877	90	6	v	v	NOUN
ap-4877	90	7	–	–	PUNCT
ap-4877	90	8	i	i	PRON
ap-4877	90	9	characteristics	characteristic	NOUN
ap-4877	90	10	of	of	ADP
ap-4877	90	11	the	the	DET
ap-4877	90	12	cntfets	cntfet	NOUN
ap-4877	90	13	are	be	AUX
ap-4877	90	14	similar	similar	ADJ
ap-4877	90	15	to	to	ADP
ap-4877	90	16	those	those	PRON
ap-4877	90	17	of	of	ADP
ap-4877	90	18	mosfet	mosfet	NOUN
ap-4877	91	1	[	[	X
ap-4877	91	2	6	6	NUM
ap-4877	91	3	]	]	PUNCT
ap-4877	91	4	and	and	CCONJ
ap-4877	91	5	hence	hence	ADV
ap-4877	91	6	the	the	DET
ap-4877	91	7	power	power	NOUN
ap-4877	91	8	gating	gate	VERB
ap-4877	91	9	structure	structure	NOUN
ap-4877	91	10	proposed	propose	VERB
ap-4877	91	11	for	for	ADP
ap-4877	91	12	mosfet	mosfet	ADJ
ap-4877	91	13	digital	digital	ADJ
ap-4877	91	14	circuits	circuit	NOUN
ap-4877	91	15	can	can	AUX
ap-4877	91	16	also	also	ADV
ap-4877	91	17	be	be	AUX
ap-4877	91	18	extended	extend	VERB
ap-4877	91	19	to	to	ADP
ap-4877	91	20	carbon	carbon	NOUN
ap-4877	91	21	nanotubes	nanotube	NOUN
ap-4877	91	22	.	.	PUNCT
ap-4877	92	1	as	as	ADP
ap-4877	92	2	an	an	DET
ap-4877	92	3	attempt	attempt	NOUN
ap-4877	92	4	,	,	PUNCT
ap-4877	92	5	the	the	DET
ap-4877	92	6	low	low	ADJ
ap-4877	92	7	leakage	leakage	NOUN
ap-4877	92	8	charge	charge	NOUN
ap-4877	92	9	recycling	recycling	NOUN
ap-4877	92	10	(	(	PUNCT
ap-4877	92	11	llcr	llcr	NOUN
ap-4877	92	12	)	)	PUNCT
ap-4877	92	13	power	power	NOUN
ap-4877	92	14	gating	gate	VERB
ap-4877	92	15	technique	technique	NOUN
ap-4877	92	16	shown	show	VERB
ap-4877	92	17	in	in	ADP
ap-4877	92	18	figure	figure	NOUN
ap-4877	92	19	5	5	NUM
ap-4877	92	20	is	be	AUX
ap-4877	92	21	used	use	VERB
ap-4877	92	22	for	for	ADP
ap-4877	92	23	minimizing	minimize	VERB
ap-4877	92	24	the	the	DET
ap-4877	92	25	power	power	NOUN
ap-4877	92	26	dissipation	dissipation	NOUN
ap-4877	92	27	in	in	ADP
ap-4877	92	28	cntfet	cntfet	ADJ
ap-4877	92	29	digital	digital	ADJ
ap-4877	92	30	circuits	circuit	NOUN
ap-4877	92	31	.	.	PUNCT
ap-4877	93	1	the	the	DET
ap-4877	93	2	llcr	llcr	PROPN
ap-4877	93	3	technique	technique	NOUN
ap-4877	93	4	enables	enable	VERB
ap-4877	93	5	three	three	NUM
ap-4877	93	6	different	different	ADJ
ap-4877	93	7	circuit	circuit	NOUN
ap-4877	93	8	operation	operation	NOUN
ap-4877	93	9	modes	mode	NOUN
ap-4877	93	10	:	:	PUNCT
ap-4877	93	11	active	active	ADJ
ap-4877	93	12	,	,	PUNCT
ap-4877	93	13	sleep	sleep	NOUN
ap-4877	93	14	and	and	CCONJ
ap-4877	93	15	drowsy	drowsy	NOUN
ap-4877	93	16	depending	depend	VERB
ap-4877	93	17	on	on	ADP
ap-4877	93	18	the	the	DET
ap-4877	93	19	values	value	NOUN
ap-4877	93	20	of	of	ADP
ap-4877	93	21	the	the	DET
ap-4877	93	22	control	control	NOUN
ap-4877	93	23	signals	signal	NOUN
ap-4877	93	24	as	as	SCONJ
ap-4877	93	25	shown	show	VERB
ap-4877	93	26	in	in	ADP
ap-4877	93	27	table	table	NOUN
ap-4877	93	28	2	2	NUM
ap-4877	93	29	.	.	PUNCT
ap-4877	94	1	in	in	ADP
ap-4877	94	2	this	this	DET
ap-4877	94	3	work	work	NOUN
ap-4877	94	4	,	,	PUNCT
ap-4877	94	5	only	only	ADV
ap-4877	94	6	active	active	ADJ
ap-4877	94	7	(	(	PUNCT
ap-4877	94	8	dynamic	dynamic	ADJ
ap-4877	94	9	)	)	PUNCT
ap-4877	94	10	and	and	CCONJ
ap-4877	94	11	sleep	sleep	NOUN
ap-4877	94	12	(	(	PUNCT
ap-4877	94	13	static	static	ADJ
ap-4877	94	14	)	)	PUNCT
ap-4877	94	15	power	power	NOUN
ap-4877	94	16	minimization	minimization	NOUN
ap-4877	94	17	is	be	AUX
ap-4877	94	18	given	give	VERB
ap-4877	94	19	an	an	DET
ap-4877	94	20	importance	importance	NOUN
ap-4877	94	21	.	.	PUNCT
ap-4877	95	1	dynamic	dynamic	ADJ
ap-4877	95	2	power	power	NOUN
ap-4877	95	3	is	be	AUX
ap-4877	95	4	the	the	DET
ap-4877	95	5	power	power	NOUN
ap-4877	95	6	consumed	consume	VERB
ap-4877	95	7	when	when	SCONJ
ap-4877	95	8	the	the	DET
ap-4877	95	9	circuit	circuit	NOUN
ap-4877	95	10	block	block	NOUN
ap-4877	95	11	is	be	AUX
ap-4877	95	12	in	in	ADP
ap-4877	95	13	active	active	ADJ
ap-4877	95	14	state	state	NOUN
ap-4877	95	15	and	and	CCONJ
ap-4877	95	16	static	static	ADJ
ap-4877	95	17	power	power	NOUN
ap-4877	95	18	is	be	AUX
ap-4877	95	19	the	the	DET
ap-4877	95	20	power	power	NOUN
ap-4877	95	21	dissipated	dissipate	VERB
ap-4877	95	22	when	when	SCONJ
ap-4877	95	23	the	the	DET
ap-4877	95	24	circuit	circuit	NOUN
ap-4877	95	25	has	have	VERB
ap-4877	95	26	no	no	DET
ap-4877	95	27	input	input	NOUN
ap-4877	95	28	transitions	transition	NOUN
ap-4877	95	29	[	[	X
ap-4877	95	30	25–29	25–29	NOUN
ap-4877	95	31	]	]	X
ap-4877	95	32	.	.	PUNCT
ap-4877	96	1	a	a	DET
ap-4877	96	2	p	p	ADJ
ap-4877	96	3	-	-	PUNCT
ap-4877	96	4	cntfet	cntfet	NOUN
ap-4877	96	5	transistor	transistor	NOUN
ap-4877	96	6	(	(	PUNCT
ap-4877	96	7	pst	pst	NOUN
ap-4877	96	8	)	)	PUNCT
ap-4877	96	9	at	at	ADP
ap-4877	96	10	the	the	DET
ap-4877	96	11	supply	supply	NOUN
ap-4877	96	12	rail	rail	NOUN
ap-4877	96	13	and	and	CCONJ
ap-4877	96	14	n	n	CCONJ
ap-4877	96	15	-	-	PUNCT
ap-4877	96	16	cntfet	cntfet	NOUN
ap-4877	96	17	transistor	transistor	NOUN
ap-4877	96	18	(	(	PUNCT
ap-4877	96	19	nst	nst	PROPN
ap-4877	96	20	)	)	PUNCT
ap-4877	96	21	at	at	ADP
ap-4877	96	22	the	the	DET
ap-4877	96	23	ground	ground	NOUN
ap-4877	96	24	rail	rail	NOUN
ap-4877	96	25	are	be	AUX
ap-4877	96	26	the	the	DET
ap-4877	96	27	sleep	sleep	NOUN
ap-4877	96	28	transistors	transistor	NOUN
ap-4877	96	29	and	and	CCONJ
ap-4877	96	30	they	they	PRON
ap-4877	96	31	are	be	AUX
ap-4877	96	32	used	use	VERB
ap-4877	96	33	for	for	ADP
ap-4877	96	34	the	the	DET
ap-4877	96	35	power	power	NOUN
ap-4877	96	36	gating	gating	NOUN
ap-4877	96	37	.	.	PUNCT
ap-4877	97	1	the	the	DET
ap-4877	97	2	drowsy	drowsy	NOUN
ap-4877	97	3	transistor	transistor	NOUN
ap-4877	97	4	(	(	PUNCT
ap-4877	97	5	md	md	PROPN
ap-4877	97	6	)	)	PUNCT
ap-4877	97	7	is	be	AUX
ap-4877	97	8	to	to	PART
ap-4877	97	9	support	support	VERB
ap-4877	97	10	the	the	DET
ap-4877	97	11	data	datum	NOUN
ap-4877	97	12	retention	retention	NOUN
ap-4877	97	13	mode	mode	NOUN
ap-4877	97	14	(	(	PUNCT
ap-4877	97	15	drowsy	drowsy	NOUN
ap-4877	97	16	mode	mode	NOUN
ap-4877	97	17	)	)	PUNCT
ap-4877	97	18	.	.	PUNCT
ap-4877	98	1	sleep	sleep	NOUN
ap-4877	98	2	mode	mode	NOUN
ap-4877	98	3	.	.	PUNCT
ap-4877	99	1	in	in	ADP
ap-4877	99	2	the	the	DET
ap-4877	99	3	standby	standby	ADJ
ap-4877	99	4	mode	mode	NOUN
ap-4877	99	5	,	,	PUNCT
ap-4877	99	6	transistors	transistor	NOUN
ap-4877	99	7	pst	pst	VERB
ap-4877	99	8	,	,	PUNCT
ap-4877	99	9	nst	nst	PROPN
ap-4877	99	10	and	and	CCONJ
ap-4877	99	11	md	md	PROPN
ap-4877	99	12	are	be	AUX
ap-4877	99	13	“	"	PUNCT
ap-4877	99	14	off	off	ADP
ap-4877	99	15	”	"	PUNCT
ap-4877	99	16	.	.	PUNCT
ap-4877	100	1	the	the	DET
ap-4877	100	2	circuit	circuit	NOUN
ap-4877	100	3	blocks	block	NOUN
ap-4877	100	4	are	be	AUX
ap-4877	100	5	disconnected	disconnect	VERB
ap-4877	100	6	from	from	ADP
ap-4877	100	7	the	the	DET
ap-4877	100	8	supply	supply	NOUN
ap-4877	100	9	and	and	CCONJ
ap-4877	100	10	ground	ground	NOUN
ap-4877	100	11	rails	rail	NOUN
ap-4877	100	12	.	.	PUNCT
ap-4877	101	1	the	the	DET
ap-4877	101	2	voltage	voltage	NOUN
ap-4877	101	3	across	across	ADP
ap-4877	101	4	circuit	circuit	NOUN
ap-4877	101	5	block	block	NOUN
ap-4877	101	6	is	be	AUX
ap-4877	101	7	zero	zero	NUM
ap-4877	101	8	and	and	CCONJ
ap-4877	101	9	it	it	PRON
ap-4877	101	10	enters	enter	VERB
ap-4877	101	11	into	into	ADP
ap-4877	101	12	deep	deep	ADJ
ap-4877	101	13	sleep	sleep	NOUN
ap-4877	101	14	26	26	NUM
ap-4877	101	15	vol	vol	NOUN
ap-4877	101	16	.	.	PUNCT
ap-4877	102	1	59	59	NUM
ap-4877	102	2	no	no	NOUN
ap-4877	102	3	.	.	PROPN
ap-4877	103	1	1/2019	1/2019	NUM
ap-4877	103	2	low	low	ADJ
ap-4877	103	3	leakage	leakage	NOUN
ap-4877	103	4	charge	charge	NOUN
ap-4877	103	5	recycling	recycling	NOUN
ap-4877	103	6	technique	technique	NOUN
ap-4877	103	7	figure	figure	NOUN
ap-4877	103	8	4	4	NUM
ap-4877	103	9	.	.	NOUN
ap-4877	104	1	v	v	X
ap-4877	104	2	–	–	PUNCT
ap-4877	104	3	i	i	PRON
ap-4877	104	4	characteristics	characteristic	NOUN
ap-4877	104	5	of	of	ADP
ap-4877	104	6	p	p	NOUN
ap-4877	104	7	-	-	PUNCT
ap-4877	104	8	cntfet	cntfet	NOUN
ap-4877	104	9	.	.	PUNCT
ap-4877	105	1	figure	figure	NOUN
ap-4877	105	2	5	5	NUM
ap-4877	105	3	.	.	PUNCT
ap-4877	105	4	low	low	ADJ
ap-4877	105	5	leakage	leakage	NOUN
ap-4877	105	6	charge	charge	NOUN
ap-4877	105	7	recycling	recycling	NOUN
ap-4877	105	8	(	(	PUNCT
ap-4877	105	9	llcr	llcr	NOUN
ap-4877	105	10	)	)	PUNCT
ap-4877	105	11	technique	technique	NOUN
ap-4877	105	12	with	with	ADP
ap-4877	105	13	cntfet	cntfet	PROPN
ap-4877	105	14	.	.	PUNCT
ap-4877	106	1	sleep	sleep	VERB
ap-4877	106	2	sleep	sleep	NOUN
ap-4877	106	3	bar	bar	NOUN
ap-4877	106	4	drowsy	drowsy	NOUN
ap-4877	106	5	circuit	circuit	NOUN
ap-4877	106	6	mode	mode	NOUN
ap-4877	106	7	1	1	NUM
ap-4877	106	8	0	0	NUM
ap-4877	106	9	0	0	NUM
ap-4877	107	1	active	active	ADJ
ap-4877	107	2	0	0	NUM
ap-4877	107	3	1	1	NUM
ap-4877	107	4	0	0	NUM
ap-4877	107	5	sleep	sleep	NOUN
ap-4877	107	6	0	0	NUM
ap-4877	107	7	0	0	NUM
ap-4877	107	8	1	1	NUM
ap-4877	107	9	drowsy	drowsy	NOUN
ap-4877	107	10	table	table	NOUN
ap-4877	107	11	2	2	NUM
ap-4877	107	12	.	.	PUNCT
ap-4877	107	13	llcr	llcr	PROPN
ap-4877	107	14	technique	technique	NOUN
ap-4877	107	15	functionality	functionality	NOUN
ap-4877	107	16	.	.	PUNCT
ap-4877	108	1	mode	mode	PROPN
ap-4877	108	2	.	.	PUNCT
ap-4877	109	1	the	the	DET
ap-4877	109	2	leakage	leakage	NOUN
ap-4877	109	3	power	power	NOUN
ap-4877	109	4	of	of	ADP
ap-4877	109	5	digital	digital	ADJ
ap-4877	109	6	circuits	circuit	NOUN
ap-4877	109	7	is	be	AUX
ap-4877	109	8	high	high	ADJ
ap-4877	109	9	,	,	PUNCT
ap-4877	109	10	if	if	SCONJ
ap-4877	109	11	it	it	PRON
ap-4877	109	12	is	be	AUX
ap-4877	109	13	in	in	ADP
ap-4877	109	14	direct	direct	ADJ
ap-4877	109	15	contact	contact	NOUN
ap-4877	109	16	with	with	ADP
ap-4877	109	17	vdd	vdd	PROPN
ap-4877	109	18	due	due	ADP
ap-4877	109	19	to	to	ADP
ap-4877	109	20	the	the	DET
ap-4877	109	21	tunnelling	tunnelling	NOUN
ap-4877	109	22	of	of	ADP
ap-4877	109	23	more	more	ADJ
ap-4877	109	24	electrons	electron	NOUN
ap-4877	109	25	.	.	PUNCT
ap-4877	110	1	in	in	ADP
ap-4877	110	2	digital	digital	ADJ
ap-4877	110	3	circuits	circuit	NOUN
ap-4877	110	4	without	without	ADP
ap-4877	110	5	a	a	DET
ap-4877	110	6	power	power	NOUN
ap-4877	110	7	gating	gating	NOUN
ap-4877	110	8	,	,	PUNCT
ap-4877	110	9	the	the	DET
ap-4877	110	10	entire	entire	ADJ
ap-4877	110	11	transistors	transistor	NOUN
ap-4877	110	12	in	in	ADP
ap-4877	110	13	the	the	DET
ap-4877	110	14	pull	pull	NOUN
ap-4877	110	15	up	up	ADP
ap-4877	110	16	network	network	NOUN
ap-4877	110	17	are	be	AUX
ap-4877	110	18	connected	connect	VERB
ap-4877	110	19	to	to	ADP
ap-4877	110	20	vdd	vdd	PROPN
ap-4877	110	21	,	,	PUNCT
ap-4877	110	22	which	which	PRON
ap-4877	110	23	means	mean	VERB
ap-4877	110	24	that	that	SCONJ
ap-4877	110	25	there	there	PRON
ap-4877	110	26	are	be	VERB
ap-4877	110	27	higher	high	ADJ
ap-4877	110	28	possibilities	possibility	NOUN
ap-4877	110	29	of	of	ADP
ap-4877	110	30	electrons	electron	NOUN
ap-4877	110	31	tunnelling	tunnel	VERB
ap-4877	110	32	from	from	ADP
ap-4877	110	33	the	the	DET
ap-4877	110	34	gate	gate	NOUN
ap-4877	110	35	to	to	ADP
ap-4877	110	36	the	the	DET
ap-4877	110	37	source	source	NOUN
ap-4877	110	38	[	[	X
ap-4877	110	39	30	30	NUM
ap-4877	110	40	]	]	PUNCT
ap-4877	110	41	.	.	PUNCT
ap-4877	111	1	but	but	CCONJ
ap-4877	111	2	in	in	ADP
ap-4877	111	3	the	the	DET
ap-4877	111	4	llcr	llcr	NOUN
ap-4877	111	5	technique	technique	NOUN
ap-4877	111	6	,	,	PUNCT
ap-4877	111	7	only	only	ADV
ap-4877	111	8	the	the	DET
ap-4877	111	9	sleep	sleep	NOUN
ap-4877	111	10	transistor	transistor	NOUN
ap-4877	111	11	(	(	PUNCT
ap-4877	111	12	pst	pst	NOUN
ap-4877	111	13	)	)	PUNCT
ap-4877	111	14	is	be	AUX
ap-4877	111	15	in	in	ADP
ap-4877	111	16	a	a	DET
ap-4877	111	17	direct	direct	ADJ
ap-4877	111	18	contact	contact	NOUN
ap-4877	111	19	with	with	ADP
ap-4877	111	20	vdd	vdd	PROPN
ap-4877	111	21	and	and	CCONJ
ap-4877	111	22	all	all	DET
ap-4877	111	23	other	other	ADJ
ap-4877	111	24	transistors	transistor	NOUN
ap-4877	111	25	in	in	ADP
ap-4877	111	26	the	the	DET
ap-4877	111	27	pull	pull	NOUN
ap-4877	111	28	up	up	ADP
ap-4877	111	29	network	network	NOUN
ap-4877	111	30	are	be	AUX
ap-4877	111	31	connected	connect	VERB
ap-4877	111	32	through	through	ADP
ap-4877	111	33	the	the	DET
ap-4877	111	34	pst	pst	NOUN
ap-4877	111	35	thus	thus	ADV
ap-4877	111	36	the	the	DET
ap-4877	111	37	leakage	leakage	NOUN
ap-4877	111	38	power	power	NOUN
ap-4877	111	39	is	be	AUX
ap-4877	111	40	drastically	drastically	ADV
ap-4877	111	41	reduced	reduce	VERB
ap-4877	111	42	compared	compare	VERB
ap-4877	111	43	to	to	ADP
ap-4877	111	44	conventional	conventional	ADJ
ap-4877	111	45	circuits	circuit	NOUN
ap-4877	111	46	.	.	PUNCT
ap-4877	112	1	d0	d0	PROPN
ap-4877	112	2	d1	d1	PROPN
ap-4877	112	3	select	select	VERB
ap-4877	112	4	select	select	ADJ
ap-4877	112	5	bar	bar	NOUN
ap-4877	112	6	0	0	NUM
ap-4877	112	7	0	0	NUM
ap-4877	112	8	0	0	NUM
ap-4877	112	9	1	1	NUM
ap-4877	112	10	0	0	NUM
ap-4877	112	11	1	1	NUM
ap-4877	112	12	0	0	NUM
ap-4877	112	13	1	1	NUM
ap-4877	112	14	1	1	NUM
ap-4877	112	15	0	0	NUM
ap-4877	112	16	0	0	NUM
ap-4877	112	17	1	1	NUM
ap-4877	112	18	1	1	NUM
ap-4877	112	19	1	1	NUM
ap-4877	112	20	0	0	NUM
ap-4877	112	21	1	1	NUM
ap-4877	112	22	0	0	NUM
ap-4877	112	23	0	0	NUM
ap-4877	112	24	1	1	NUM
ap-4877	112	25	0	0	NUM
ap-4877	112	26	0	0	NUM
ap-4877	112	27	1	1	NUM
ap-4877	112	28	1	1	NUM
ap-4877	112	29	0	0	NUM
ap-4877	112	30	1	1	NUM
ap-4877	112	31	0	0	NUM
ap-4877	112	32	1	1	NUM
ap-4877	112	33	0	0	NUM
ap-4877	112	34	1	1	NUM
ap-4877	112	35	1	1	NUM
ap-4877	112	36	1	1	NUM
ap-4877	112	37	0	0	NUM
ap-4877	112	38	table	table	NOUN
ap-4877	112	39	3	3	NUM
ap-4877	112	40	.	.	PUNCT
ap-4877	112	41	input	input	NOUN
ap-4877	112	42	sets	set	NOUN
ap-4877	112	43	for	for	ADP
ap-4877	112	44	a	a	DET
ap-4877	112	45	2	2	NUM
ap-4877	112	46	:	:	SYM
ap-4877	112	47	1	1	NUM
ap-4877	112	48	multiplexer	multiplexer	NOUN
ap-4877	112	49	static	static	ADJ
ap-4877	112	50	power	power	NOUN
ap-4877	112	51	measurement	measurement	NOUN
ap-4877	112	52	.	.	PUNCT
ap-4877	113	1	active	active	ADJ
ap-4877	113	2	mode	mode	NOUN
ap-4877	113	3	.	.	PUNCT
ap-4877	114	1	in	in	ADP
ap-4877	114	2	the	the	DET
ap-4877	114	3	active	active	ADJ
ap-4877	114	4	mode	mode	NOUN
ap-4877	114	5	,	,	PUNCT
ap-4877	114	6	the	the	DET
ap-4877	114	7	transistor	transistor	NOUN
ap-4877	114	8	pst	pst	NOUN
ap-4877	114	9	is	be	AUX
ap-4877	114	10	“	"	PUNCT
ap-4877	114	11	on	on	ADP
ap-4877	114	12	”	"	PUNCT
ap-4877	114	13	and	and	CCONJ
ap-4877	114	14	md	md	PROPN
ap-4877	114	15	is	be	AUX
ap-4877	114	16	“	"	PUNCT
ap-4877	114	17	off	off	ADP
ap-4877	114	18	”	"	PUNCT
ap-4877	114	19	.	.	PUNCT
ap-4877	115	1	the	the	DET
ap-4877	115	2	virtual	virtual	ADJ
ap-4877	115	3	ground	ground	NOUN
ap-4877	115	4	(	(	PUNCT
ap-4877	115	5	vgnd	vgnd	NOUN
ap-4877	115	6	)	)	PUNCT
ap-4877	115	7	voltage	voltage	NOUN
ap-4877	115	8	is	be	AUX
ap-4877	115	9	approximately	approximately	ADV
ap-4877	115	10	at	at	ADP
ap-4877	115	11	zero	zero	NUM
ap-4877	115	12	level	level	NOUN
ap-4877	115	13	.	.	PUNCT
ap-4877	116	1	as	as	ADP
ap-4877	116	2	the	the	DET
ap-4877	116	3	sleep	sleep	NOUN
ap-4877	116	4	signal	signal	NOUN
ap-4877	116	5	level	level	NOUN
ap-4877	116	6	rises	rise	NOUN
ap-4877	116	7	,	,	PUNCT
ap-4877	116	8	the	the	DET
ap-4877	116	9	voltage	voltage	NOUN
ap-4877	116	10	at	at	ADP
ap-4877	116	11	the	the	DET
ap-4877	116	12	gate	gate	NOUN
ap-4877	116	13	of	of	ADP
ap-4877	116	14	the	the	DET
ap-4877	116	15	nst	nst	PROPN
ap-4877	116	16	transistor	transistor	NOUN
ap-4877	116	17	(	(	PUNCT
ap-4877	116	18	vg	vg	NOUN
ap-4877	116	19	)	)	PUNCT
ap-4877	116	20	is	be	AUX
ap-4877	116	21	increased	increase	VERB
ap-4877	116	22	and	and	CCONJ
ap-4877	116	23	the	the	DET
ap-4877	116	24	electric	electric	ADJ
ap-4877	116	25	charge	charge	NOUN
ap-4877	116	26	gets	get	AUX
ap-4877	116	27	stored	store	VERB
ap-4877	116	28	at	at	ADP
ap-4877	116	29	vg	vg	NOUN
ap-4877	116	30	and	and	CCONJ
ap-4877	116	31	nst	nst	PROPN
ap-4877	116	32	is	be	AUX
ap-4877	116	33	“	"	PUNCT
ap-4877	116	34	on	on	ADP
ap-4877	116	35	”	"	PUNCT
ap-4877	116	36	.	.	PUNCT
ap-4877	117	1	the	the	DET
ap-4877	117	2	circuit	circuit	NOUN
ap-4877	117	3	blocks	block	NOUN
ap-4877	117	4	are	be	AUX
ap-4877	117	5	connected	connect	VERB
ap-4877	117	6	with	with	ADP
ap-4877	117	7	the	the	DET
ap-4877	117	8	supply	supply	NOUN
ap-4877	117	9	rails	rail	NOUN
ap-4877	117	10	and	and	CCONJ
ap-4877	117	11	the	the	DET
ap-4877	117	12	effective	effective	ADJ
ap-4877	117	13	supply	supply	NOUN
ap-4877	117	14	voltage	voltage	NOUN
ap-4877	117	15	experienced	experience	VERB
ap-4877	117	16	by	by	ADP
ap-4877	117	17	the	the	DET
ap-4877	117	18	circuit	circuit	NOUN
ap-4877	117	19	block	block	NOUN
ap-4877	117	20	is	be	AUX
ap-4877	117	21	(	(	PUNCT
ap-4877	117	22	vdd	vdd	PROPN
ap-4877	117	23	–	–	PUNCT
ap-4877	117	24	vthp	vthp	PROPN
ap-4877	117	25	–	–	PUNCT
ap-4877	117	26	vthn	vthn	NOUN
ap-4877	117	27	)	)	PUNCT
ap-4877	117	28	,	,	PUNCT
ap-4877	117	29	where	where	SCONJ
ap-4877	117	30	vthp	vthp	PROPN
ap-4877	117	31	and	and	CCONJ
ap-4877	117	32	vthn	vthn	PROPN
ap-4877	117	33	are	be	AUX
ap-4877	117	34	the	the	DET
ap-4877	117	35	threshold	threshold	NOUN
ap-4877	117	36	voltages	voltage	NOUN
ap-4877	117	37	of	of	ADP
ap-4877	117	38	pst	pst	NOUN
ap-4877	117	39	and	and	CCONJ
ap-4877	117	40	nst	nst	ADP
ap-4877	117	41	respectively	respectively	ADV
ap-4877	117	42	.	.	PUNCT
ap-4877	118	1	if	if	SCONJ
ap-4877	118	2	digital	digital	ADJ
ap-4877	118	3	circuits	circuit	NOUN
ap-4877	118	4	across	across	ADP
ap-4877	118	5	the	the	DET
ap-4877	118	6	circuit	circuit	NOUN
ap-4877	118	7	blocks	block	NOUN
ap-4877	118	8	are	be	AUX
ap-4877	118	9	not	not	PART
ap-4877	118	10	power	power	NOUN
ap-4877	118	11	gated	gate	VERB
ap-4877	118	12	,	,	PUNCT
ap-4877	118	13	the	the	DET
ap-4877	118	14	voltage	voltage	NOUN
ap-4877	118	15	level	level	NOUN
ap-4877	118	16	experienced	experience	VERB
ap-4877	118	17	by	by	ADP
ap-4877	118	18	the	the	DET
ap-4877	118	19	circuit	circuit	NOUN
ap-4877	118	20	blocks	block	NOUN
ap-4877	118	21	is	be	AUX
ap-4877	118	22	vdd	vdd	PROPN
ap-4877	118	23	.	.	PUNCT
ap-4877	119	1	as	as	SCONJ
ap-4877	119	2	the	the	DET
ap-4877	119	3	net	net	ADJ
ap-4877	119	4	voltage	voltage	NOUN
ap-4877	119	5	across	across	ADP
ap-4877	119	6	the	the	DET
ap-4877	119	7	circuit	circuit	NOUN
ap-4877	119	8	block	block	NOUN
ap-4877	119	9	is	be	AUX
ap-4877	119	10	lessened	lessen	VERB
ap-4877	119	11	by	by	ADP
ap-4877	119	12	the	the	DET
ap-4877	119	13	threshold	threshold	NOUN
ap-4877	119	14	voltage	voltage	NOUN
ap-4877	119	15	of	of	ADP
ap-4877	119	16	the	the	DET
ap-4877	119	17	sleep	sleep	NOUN
ap-4877	119	18	transistors	transistor	NOUN
ap-4877	119	19	,	,	PUNCT
ap-4877	119	20	the	the	DET
ap-4877	119	21	dynamic	dynamic	ADJ
ap-4877	119	22	power	power	NOUN
ap-4877	119	23	is	be	AUX
ap-4877	119	24	highly	highly	ADV
ap-4877	119	25	alleviated	alleviated	ADJ
ap-4877	119	26	in	in	ADP
ap-4877	119	27	powergated	powergate	VERB
ap-4877	119	28	circuits	circuit	NOUN
ap-4877	119	29	compared	compare	VERB
ap-4877	119	30	to	to	ADP
ap-4877	119	31	conventional	conventional	ADJ
ap-4877	119	32	digital	digital	ADJ
ap-4877	119	33	circuits	circuit	NOUN
ap-4877	119	34	.	.	PUNCT
ap-4877	120	1	drowsy	drowsy	NOUN
ap-4877	120	2	mode	mode	NOUN
ap-4877	120	3	.	.	PUNCT
ap-4877	121	1	the	the	DET
ap-4877	121	2	drowsy	drowsy	NOUN
ap-4877	121	3	mode	mode	NOUN
ap-4877	121	4	is	be	AUX
ap-4877	121	5	meant	mean	VERB
ap-4877	121	6	for	for	ADP
ap-4877	121	7	the	the	DET
ap-4877	121	8	data	data	NOUN
ap-4877	121	9	retention	retention	NOUN
ap-4877	121	10	in	in	ADP
ap-4877	121	11	circuit	circuit	NOUN
ap-4877	121	12	blocks	block	NOUN
ap-4877	121	13	and	and	CCONJ
ap-4877	121	14	it	it	PRON
ap-4877	121	15	is	be	AUX
ap-4877	121	16	not	not	PART
ap-4877	121	17	considered	consider	VERB
ap-4877	121	18	in	in	ADP
ap-4877	121	19	this	this	DET
ap-4877	121	20	paper	paper	NOUN
ap-4877	121	21	.	.	PUNCT
ap-4877	122	1	data	datum	NOUN
ap-4877	122	2	is	be	AUX
ap-4877	122	3	retained	retain	VERB
ap-4877	122	4	by	by	ADP
ap-4877	122	5	raising	raise	VERB
ap-4877	122	6	the	the	DET
ap-4877	122	7	virtual	virtual	ADJ
ap-4877	122	8	ground	ground	NOUN
ap-4877	122	9	voltage	voltage	NOUN
ap-4877	122	10	and	and	CCONJ
ap-4877	122	11	maintaining	maintain	VERB
ap-4877	122	12	a	a	DET
ap-4877	122	13	significant	significant	ADJ
ap-4877	122	14	voltage	voltage	NOUN
ap-4877	122	15	across	across	ADP
ap-4877	122	16	the	the	DET
ap-4877	122	17	blocks	block	NOUN
ap-4877	122	18	.	.	PUNCT
ap-4877	123	1	in	in	ADP
ap-4877	123	2	the	the	DET
ap-4877	123	3	llcr	llcr	NOUN
ap-4877	123	4	technique	technique	NOUN
ap-4877	123	5	,	,	PUNCT
ap-4877	123	6	during	during	ADP
ap-4877	123	7	the	the	DET
ap-4877	123	8	drowsy	drowsy	NOUN
ap-4877	123	9	mode	mode	NOUN
ap-4877	123	10	,	,	PUNCT
ap-4877	123	11	the	the	DET
ap-4877	123	12	transistor	transistor	NOUN
ap-4877	123	13	md	md	PROPN
ap-4877	123	14	is	be	AUX
ap-4877	123	15	“	"	PUNCT
ap-4877	123	16	on	on	ADP
ap-4877	123	17	”	"	PUNCT
ap-4877	123	18	.	.	PUNCT
ap-4877	124	1	the	the	DET
ap-4877	124	2	charge	charge	NOUN
ap-4877	124	3	stored	store	VERB
ap-4877	124	4	at	at	ADP
ap-4877	124	5	the	the	DET
ap-4877	124	6	gate	gate	NOUN
ap-4877	124	7	of	of	ADP
ap-4877	124	8	the	the	DET
ap-4877	124	9	nst	nst	PROPN
ap-4877	124	10	transistor	transistor	NOUN
ap-4877	124	11	(	(	PUNCT
ap-4877	124	12	vg	vg	NOUN
ap-4877	124	13	)	)	PUNCT
ap-4877	124	14	during	during	ADP
ap-4877	124	15	the	the	DET
ap-4877	124	16	active	active	ADJ
ap-4877	124	17	mode	mode	NOUN
ap-4877	124	18	increases	increase	VERB
ap-4877	124	19	the	the	DET
ap-4877	124	20	virtual	virtual	ADJ
ap-4877	124	21	ground	ground	NOUN
ap-4877	124	22	voltage	voltage	NOUN
ap-4877	124	23	(	(	PUNCT
ap-4877	124	24	vgnd	vgnd	NOUN
ap-4877	124	25	)	)	PUNCT
ap-4877	124	26	through	through	ADP
ap-4877	124	27	the	the	DET
ap-4877	124	28	md	md	PROPN
ap-4877	124	29	.	.	PUNCT
ap-4877	125	1	this	this	DET
ap-4877	125	2	process	process	NOUN
ap-4877	125	3	continues	continue	VERB
ap-4877	125	4	until	until	SCONJ
ap-4877	125	5	the	the	DET
ap-4877	125	6	charges	charge	NOUN
ap-4877	125	7	at	at	ADP
ap-4877	125	8	the	the	DET
ap-4877	125	9	vgnd	vgnd	NOUN
ap-4877	125	10	and	and	CCONJ
ap-4877	125	11	vg	vg	NOUN
ap-4877	125	12	are	be	AUX
ap-4877	125	13	equalized	equalize	VERB
ap-4877	125	14	,	,	PUNCT
ap-4877	125	15	and	and	CCONJ
ap-4877	125	16	the	the	DET
ap-4877	125	17	vgnd	vgnd	NOUN
ap-4877	125	18	voltage	voltage	NOUN
ap-4877	125	19	reaches	reach	VERB
ap-4877	125	20	an	an	DET
ap-4877	125	21	equilibrium	equilibrium	NOUN
ap-4877	125	22	(	(	PUNCT
ap-4877	125	23	vcr	vcr	NOUN
ap-4877	125	24	)	)	PUNCT
ap-4877	125	25	at	at	ADP
ap-4877	125	26	the	the	DET
ap-4877	125	27	balance	balance	NOUN
ap-4877	125	28	point	point	NOUN
ap-4877	125	29	of	of	ADP
ap-4877	125	30	the	the	DET
ap-4877	125	31	leak	leak	NOUN
ap-4877	125	32	current	current	NOUN
ap-4877	125	33	of	of	ADP
ap-4877	125	34	the	the	DET
ap-4877	125	35	circuit	circuit	NOUN
ap-4877	125	36	block	block	NOUN
ap-4877	125	37	and	and	CCONJ
ap-4877	125	38	the	the	DET
ap-4877	125	39	current	current	NOUN
ap-4877	125	40	through	through	ADP
ap-4877	125	41	the	the	DET
ap-4877	125	42	sleep	sleep	NOUN
ap-4877	125	43	transistor	transistor	NOUN
ap-4877	125	44	.	.	PUNCT
ap-4877	126	1	thus	thus	ADV
ap-4877	126	2	,	,	PUNCT
ap-4877	126	3	the	the	DET
ap-4877	126	4	voltage	voltage	NOUN
ap-4877	126	5	level	level	NOUN
ap-4877	126	6	of	of	ADP
ap-4877	126	7	the	the	DET
ap-4877	126	8	vgnd	vgnd	ADJ
ap-4877	126	9	node	node	NOUN
ap-4877	126	10	is	be	AUX
ap-4877	126	11	increased	increase	VERB
ap-4877	126	12	to	to	ADP
ap-4877	126	13	vcr	vcr	NOUN
ap-4877	126	14	and	and	CCONJ
ap-4877	126	15	the	the	DET
ap-4877	126	16	voltage	voltage	NOUN
ap-4877	126	17	across	across	ADP
ap-4877	126	18	the	the	DET
ap-4877	126	19	circuit	circuit	NOUN
ap-4877	126	20	block	block	NOUN
ap-4877	126	21	is	be	AUX
ap-4877	126	22	(	(	PUNCT
ap-4877	126	23	vdd	vdd	PROPN
ap-4877	126	24	–	–	PUNCT
ap-4877	126	25	|vtp|–vcr	|vtp|–vcr	X
ap-4877	126	26	)	)	PUNCT
ap-4877	126	27	,	,	PUNCT
ap-4877	126	28	which	which	PRON
ap-4877	126	29	is	be	AUX
ap-4877	126	30	sufficient	sufficient	ADJ
ap-4877	126	31	to	to	PART
ap-4877	126	32	retain	retain	VERB
ap-4877	126	33	the	the	DET
ap-4877	126	34	data	datum	NOUN
ap-4877	126	35	in	in	ADP
ap-4877	126	36	the	the	DET
ap-4877	126	37	circuit	circuit	NOUN
ap-4877	126	38	blocks	block	NOUN
ap-4877	126	39	.	.	PUNCT
ap-4877	127	1	in	in	ADP
ap-4877	127	2	digital	digital	ADJ
ap-4877	127	3	circuits	circuit	NOUN
ap-4877	127	4	without	without	ADP
ap-4877	127	5	power	power	NOUN
ap-4877	127	6	gating	gating	NOUN
ap-4877	127	7	,	,	PUNCT
ap-4877	127	8	there	there	PRON
ap-4877	127	9	is	be	VERB
ap-4877	127	10	no	no	DET
ap-4877	127	11	possibility	possibility	NOUN
ap-4877	127	12	for	for	ADP
ap-4877	127	13	the	the	DET
ap-4877	127	14	data	data	NOUN
ap-4877	127	15	retention	retention	NOUN
ap-4877	127	16	.	.	PUNCT
ap-4877	128	1	4	4	X
ap-4877	128	2	.	.	X
ap-4877	128	3	simulation	simulation	NOUN
ap-4877	128	4	results	result	VERB
ap-4877	128	5	for	for	ADP
ap-4877	128	6	evaluating	evaluate	VERB
ap-4877	128	7	the	the	DET
ap-4877	128	8	performance	performance	NOUN
ap-4877	128	9	of	of	ADP
ap-4877	128	10	the	the	DET
ap-4877	128	11	llcr	llcr	PROPN
ap-4877	128	12	power	power	NOUN
ap-4877	128	13	gating	gate	VERB
ap-4877	128	14	structure	structure	NOUN
ap-4877	128	15	,	,	PUNCT
ap-4877	128	16	it	it	PRON
ap-4877	128	17	is	be	AUX
ap-4877	128	18	applied	apply	VERB
ap-4877	128	19	to	to	ADP
ap-4877	128	20	inverter	inverter	VERB
ap-4877	128	21	,	,	PUNCT
ap-4877	128	22	2	2	NUM
ap-4877	128	23	:	:	SYM
ap-4877	128	24	1	1	NUM
ap-4877	128	25	multiplexer	multiplexer	NOUN
ap-4877	128	26	,	,	PUNCT
ap-4877	128	27	voltage	voltage	NOUN
ap-4877	128	28	controlled	control	VERB
ap-4877	128	29	oscillator	oscillator	NOUN
ap-4877	128	30	(	(	PUNCT
ap-4877	128	31	vco	vco	PROPN
ap-4877	128	32	)	)	PUNCT
ap-4877	128	33	and	and	CCONJ
ap-4877	128	34	static	static	ADJ
ap-4877	128	35	random	random	ADJ
ap-4877	128	36	access	access	NOUN
ap-4877	128	37	memory	memory	NOUN
ap-4877	128	38	(	(	PUNCT
ap-4877	128	39	sram	sram	PROPN
ap-4877	128	40	)	)	PUNCT
ap-4877	128	41	,	,	PUNCT
ap-4877	128	42	as	as	SCONJ
ap-4877	128	43	these	these	PRON
ap-4877	128	44	are	be	AUX
ap-4877	128	45	the	the	DET
ap-4877	128	46	basic	basic	ADJ
ap-4877	128	47	circuits	circuit	NOUN
ap-4877	128	48	for	for	ADP
ap-4877	128	49	a	a	DET
ap-4877	128	50	digital	digital	ADJ
ap-4877	128	51	circuit	circuit	NOUN
ap-4877	128	52	design	design	NOUN
ap-4877	128	53	.	.	PUNCT
ap-4877	129	1	synopsys	synopsys	PROPN
ap-4877	129	2	hspice	hspice	NOUN
ap-4877	129	3	and	and	CCONJ
ap-4877	129	4	32	32	NUM
ap-4877	129	5	nm	nm	NOUN
ap-4877	129	6	stanford	stanford	PROPN
ap-4877	129	7	cntfet	cntfet	PROPN
ap-4877	129	8	models	model	NOUN
ap-4877	130	1	[	[	X
ap-4877	130	2	32	32	NUM
ap-4877	130	3	]	]	PUNCT
ap-4877	130	4	are	be	AUX
ap-4877	130	5	used	use	VERB
ap-4877	130	6	for	for	ADP
ap-4877	130	7	carrying	carry	VERB
ap-4877	130	8	out	out	ADP
ap-4877	130	9	the	the	DET
ap-4877	130	10	circuit	circuit	NOUN
ap-4877	130	11	simulation	simulation	NOUN
ap-4877	130	12	.	.	PUNCT
ap-4877	131	1	0.9v	0.9v	PRON
ap-4877	131	2	supply	supply	NOUN
ap-4877	131	3	27	27	NUM
ap-4877	131	4	manickam	manickam	PROPN
ap-4877	131	5	kavitha	kavitha	PROPN
ap-4877	131	6	,	,	PUNCT
ap-4877	131	7	alagar	alagar	PROPN
ap-4877	131	8	m.	m.	PROPN
ap-4877	131	9	kalpana	kalpana	PROPN
ap-4877	131	10	acta	acta	PROPN
ap-4877	131	11	polytechnica	polytechnica	PROPN
ap-4877	131	12	figure	figure	NOUN
ap-4877	131	13	6	6	NUM
ap-4877	131	14	.	.	PUNCT
ap-4877	131	15	integration	integration	NOUN
ap-4877	131	16	of	of	ADP
ap-4877	131	17	inverter	inverter	NOUN
ap-4877	131	18	within	within	ADP
ap-4877	131	19	llcr	llcr	PROPN
ap-4877	131	20	.	.	PUNCT
ap-4877	132	1	figure	figure	VERB
ap-4877	132	2	7	7	NUM
ap-4877	132	3	.	.	PUNCT
ap-4877	132	4	integration	integration	NOUN
ap-4877	132	5	of	of	ADP
ap-4877	132	6	2	2	NUM
ap-4877	132	7	:	:	SYM
ap-4877	132	8	1	1	NUM
ap-4877	132	9	multiplexer	multiplexer	NOUN
ap-4877	132	10	within	within	ADP
ap-4877	132	11	llcr	llcr	PROPN
ap-4877	132	12	.	.	PUNCT
ap-4877	133	1	figure	figure	VERB
ap-4877	133	2	8	8	NUM
ap-4877	133	3	.	.	PUNCT
ap-4877	134	1	integration	integration	NOUN
ap-4877	134	2	of	of	ADP
ap-4877	134	3	vco	vco	PROPN
ap-4877	134	4	within	within	ADP
ap-4877	134	5	llcr	llcr	PROPN
ap-4877	134	6	.	.	PUNCT
ap-4877	135	1	figure	figure	VERB
ap-4877	135	2	9	9	NUM
ap-4877	135	3	.	.	PUNCT
ap-4877	136	1	integration	integration	NOUN
ap-4877	136	2	of	of	ADP
ap-4877	136	3	sram	sram	PROPN
ap-4877	136	4	cell	cell	NOUN
ap-4877	136	5	within	within	ADP
ap-4877	136	6	llcr	llcr	PROPN
ap-4877	136	7	.	.	PUNCT
ap-4877	137	1	voltage	voltage	NOUN
ap-4877	137	2	and	and	CCONJ
ap-4877	137	3	27	27	NUM
ap-4877	137	4	°	°	NOUN
ap-4877	137	5	c	c	NOUN
ap-4877	137	6	temperature	temperature	NOUN
ap-4877	137	7	are	be	AUX
ap-4877	137	8	considered	consider	VERB
ap-4877	137	9	for	for	ADP
ap-4877	137	10	the	the	DET
ap-4877	137	11	experimentation	experimentation	NOUN
ap-4877	137	12	of	of	ADP
ap-4877	137	13	digital	digital	ADJ
ap-4877	137	14	circuits	circuit	NOUN
ap-4877	137	15	.	.	PUNCT
ap-4877	138	1	power	power	NOUN
ap-4877	138	2	dissipation	dissipation	NOUN
ap-4877	138	3	is	be	AUX
ap-4877	138	4	estimated	estimate	VERB
ap-4877	138	5	with	with	ADP
ap-4877	138	6	and	and	CCONJ
ap-4877	138	7	without	without	ADP
ap-4877	138	8	the	the	DET
ap-4877	138	9	power	power	NOUN
ap-4877	138	10	gating	gate	VERB
ap-4877	138	11	structure	structure	NOUN
ap-4877	138	12	for	for	ADP
ap-4877	138	13	the	the	DET
ap-4877	138	14	above	above	ADJ
ap-4877	138	15	mentioned	mention	VERB
ap-4877	138	16	circuits	circuit	NOUN
ap-4877	138	17	,	,	PUNCT
ap-4877	138	18	by	by	ADP
ap-4877	138	19	varying	vary	VERB
ap-4877	138	20	the	the	DET
ap-4877	138	21	cntfet	cntfet	ADJ
ap-4877	138	22	device	device	NOUN
ap-4877	138	23	parameters	parameter	NOUN
ap-4877	138	24	like	like	ADP
ap-4877	138	25	cntfet	cntfet	NOUN
ap-4877	138	26	diameter	diameter	NOUN
ap-4877	138	27	(	(	PUNCT
ap-4877	138	28	dcnt	dcnt	PROPN
ap-4877	138	29	)	)	PUNCT
ap-4877	138	30	,	,	PUNCT
ap-4877	138	31	number	number	NOUN
ap-4877	138	32	of	of	ADP
ap-4877	138	33	carbon	carbon	NOUN
ap-4877	138	34	nanotubes	nanotube	NOUN
ap-4877	138	35	(	(	PUNCT
ap-4877	138	36	n	n	CCONJ
ap-4877	138	37	)	)	PUNCT
ap-4877	138	38	,	,	PUNCT
ap-4877	138	39	pitch	pitch	NOUN
ap-4877	138	40	distance	distance	NOUN
ap-4877	138	41	(	(	PUNCT
ap-4877	138	42	s	s	NOUN
ap-4877	138	43	)	)	PUNCT
ap-4877	138	44	and	and	CCONJ
ap-4877	138	45	oxide	oxide	NOUN
ap-4877	138	46	thickness	thickness	NOUN
ap-4877	138	47	(	(	PUNCT
ap-4877	138	48	tox	tox	NOUN
ap-4877	138	49	)	)	PUNCT
ap-4877	138	50	.	.	PUNCT
ap-4877	139	1	this	this	PRON
ap-4877	139	2	is	be	AUX
ap-4877	139	3	done	do	VERB
ap-4877	139	4	to	to	PART
ap-4877	139	5	assess	assess	VERB
ap-4877	139	6	the	the	DET
ap-4877	139	7	effect	effect	NOUN
ap-4877	139	8	of	of	ADP
ap-4877	139	9	these	these	DET
ap-4877	139	10	device	device	NOUN
ap-4877	139	11	parameters	parameter	NOUN
ap-4877	139	12	on	on	ADP
ap-4877	139	13	power	power	NOUN
ap-4877	139	14	.	.	PUNCT
ap-4877	140	1	a	a	DET
ap-4877	140	2	subset	subset	NOUN
ap-4877	140	3	of	of	ADP
ap-4877	140	4	possible	possible	ADJ
ap-4877	140	5	input	input	NOUN
ap-4877	140	6	combinations	combination	NOUN
ap-4877	140	7	is	be	AUX
ap-4877	140	8	considered	consider	VERB
ap-4877	140	9	to	to	PART
ap-4877	140	10	estimate	estimate	VERB
ap-4877	140	11	the	the	DET
ap-4877	140	12	static	static	ADJ
ap-4877	140	13	power	power	NOUN
ap-4877	140	14	as	as	SCONJ
ap-4877	140	15	leakage	leakage	NOUN
ap-4877	140	16	power	power	NOUN
ap-4877	140	17	varies	vary	VERB
ap-4877	140	18	according	accord	VERB
ap-4877	140	19	to	to	ADP
ap-4877	140	20	the	the	DET
ap-4877	140	21	input	input	NOUN
ap-4877	140	22	state	state	NOUN
ap-4877	140	23	.	.	PUNCT
ap-4877	141	1	eight	eight	NUM
ap-4877	141	2	random	random	ADJ
ap-4877	141	3	input	input	NOUN
ap-4877	141	4	vectors	vector	NOUN
ap-4877	141	5	shown	show	VERB
ap-4877	141	6	in	in	ADP
ap-4877	141	7	table	table	NOUN
ap-4877	141	8	3	3	NUM
ap-4877	141	9	are	be	AUX
ap-4877	141	10	considered	consider	VERB
ap-4877	141	11	for	for	ADP
ap-4877	141	12	the	the	DET
ap-4877	141	13	2	2	NUM
ap-4877	141	14	:	:	SYM
ap-4877	141	15	1	1	NUM
ap-4877	141	16	multiplexer	multiplexer	NOUN
ap-4877	141	17	out	out	ADP
ap-4877	141	18	of	of	ADP
ap-4877	141	19	16	16	NUM
ap-4877	141	20	possible	possible	ADJ
ap-4877	141	21	input	input	NOUN
ap-4877	141	22	combinations	combination	NOUN
ap-4877	141	23	.	.	PUNCT
ap-4877	142	1	two	two	NUM
ap-4877	142	2	input	input	NOUN
ap-4877	142	3	vectors	vector	NOUN
ap-4877	142	4	1	1	NUM
ap-4877	142	5	and	and	CCONJ
ap-4877	142	6	0	0	NUM
ap-4877	142	7	are	be	AUX
ap-4877	142	8	considered	consider	VERB
ap-4877	142	9	for	for	ADP
ap-4877	142	10	the	the	DET
ap-4877	142	11	inverter	inverter	NOUN
ap-4877	142	12	.	.	PUNCT
ap-4877	143	1	the	the	DET
ap-4877	143	2	sram	sram	PROPN
ap-4877	143	3	cell	cell	NOUN
ap-4877	143	4	is	be	AUX
ap-4877	143	5	held	hold	VERB
ap-4877	143	6	in	in	ADP
ap-4877	143	7	the	the	DET
ap-4877	143	8	hold	hold	NOUN
ap-4877	143	9	mode	mode	NOUN
ap-4877	143	10	for	for	ADP
ap-4877	143	11	the	the	DET
ap-4877	143	12	leakage	leakage	NOUN
ap-4877	143	13	power	power	NOUN
ap-4877	143	14	measurement	measurement	NOUN
ap-4877	143	15	.	.	PUNCT
ap-4877	144	1	when	when	SCONJ
ap-4877	144	2	an	an	DET
ap-4877	144	3	input	input	NOUN
ap-4877	144	4	vector	vector	NOUN
ap-4877	144	5	is	be	AUX
ap-4877	144	6	asserted	assert	VERB
ap-4877	144	7	,	,	PUNCT
ap-4877	144	8	the	the	DET
ap-4877	144	9	power	power	NOUN
ap-4877	144	10	dissipation	dissipation	NOUN
ap-4877	144	11	is	be	AUX
ap-4877	144	12	measured	measure	VERB
ap-4877	144	13	after	after	SCONJ
ap-4877	144	14	the	the	DET
ap-4877	144	15	signal	signal	NOUN
ap-4877	144	16	becomes	become	VERB
ap-4877	144	17	stable	stable	ADJ
ap-4877	144	18	(	(	PUNCT
ap-4877	144	19	e.g.	e.g.	ADV
ap-4877	144	20	,	,	PUNCT
ap-4877	144	21	after	after	ADP
ap-4877	144	22	50	50	NUM
ap-4877	144	23	ns	ns	NUM
ap-4877	144	24	)	)	PUNCT
ap-4877	144	25	.	.	PUNCT
ap-4877	145	1	the	the	DET
ap-4877	145	2	leakage	leakage	NOUN
ap-4877	145	3	power	power	NOUN
ap-4877	145	4	of	of	ADP
ap-4877	145	5	each	each	DET
ap-4877	145	6	circuit	circuit	NOUN
ap-4877	145	7	is	be	AUX
ap-4877	145	8	derived	derive	VERB
ap-4877	145	9	by	by	ADP
ap-4877	145	10	averaging	average	VERB
ap-4877	145	11	the	the	DET
ap-4877	145	12	power	power	NOUN
ap-4877	145	13	dissipation	dissipation	NOUN
ap-4877	145	14	for	for	ADP
ap-4877	145	15	all	all	DET
ap-4877	145	16	input	input	NOUN
ap-4877	145	17	combinations	combination	NOUN
ap-4877	145	18	.	.	PUNCT
ap-4877	146	1	the	the	DET
ap-4877	146	2	dynamic	dynamic	ADJ
ap-4877	146	3	power	power	NOUN
ap-4877	146	4	is	be	AUX
ap-4877	146	5	estimated	estimate	VERB
ap-4877	146	6	by	by	ADP
ap-4877	146	7	asserting	assert	VERB
ap-4877	146	8	semirandom	semirandom	NOUN
ap-4877	146	9	input	input	NOUN
ap-4877	146	10	signals	signal	NOUN
ap-4877	146	11	.	.	PUNCT
ap-4877	147	1	inputs	input	NOUN
ap-4877	147	2	are	be	AUX
ap-4877	147	3	chosen	choose	VERB
ap-4877	147	4	so	so	SCONJ
ap-4877	147	5	that	that	SCONJ
ap-4877	147	6	a	a	DET
ap-4877	147	7	large	large	ADJ
ap-4877	147	8	number	number	NOUN
ap-4877	147	9	of	of	ADP
ap-4877	147	10	possible	possible	ADJ
ap-4877	147	11	input	input	NOUN
ap-4877	147	12	combinations	combination	NOUN
ap-4877	147	13	are	be	AUX
ap-4877	147	14	included	include	VERB
ap-4877	147	15	in	in	ADP
ap-4877	147	16	the	the	DET
ap-4877	147	17	set	set	NOUN
ap-4877	147	18	.	.	PUNCT
ap-4877	148	1	the	the	DET
ap-4877	148	2	average	average	ADJ
ap-4877	148	3	power	power	NOUN
ap-4877	148	4	dissipation	dissipation	NOUN
ap-4877	148	5	reported	report	VERB
ap-4877	148	6	by	by	ADP
ap-4877	148	7	the	the	DET
ap-4877	148	8	hspice	hspice	NOUN
ap-4877	148	9	is	be	AUX
ap-4877	148	10	taken	take	VERB
ap-4877	148	11	as	as	ADP
ap-4877	148	12	the	the	DET
ap-4877	148	13	estimate	estimate	NOUN
ap-4877	148	14	of	of	ADP
ap-4877	148	15	the	the	DET
ap-4877	148	16	dynamic	dynamic	ADJ
ap-4877	148	17	power	power	NOUN
ap-4877	148	18	dissipation	dissipation	NOUN
ap-4877	148	19	.	.	PUNCT
ap-4877	149	1	the	the	DET
ap-4877	149	2	active	active	ADJ
ap-4877	149	3	power	power	NOUN
ap-4877	149	4	of	of	ADP
ap-4877	149	5	the	the	DET
ap-4877	149	6	inverter	inverter	NOUN
ap-4877	149	7	is	be	AUX
ap-4877	149	8	measured	measure	VERB
ap-4877	149	9	by	by	ADP
ap-4877	149	10	asserting	assert	VERB
ap-4877	149	11	a	a	DET
ap-4877	149	12	pulse	pulse	NOUN
ap-4877	149	13	signal	signal	NOUN
ap-4877	149	14	with	with	ADP
ap-4877	149	15	a	a	DET
ap-4877	149	16	frequency	frequency	NOUN
ap-4877	149	17	of	of	ADP
ap-4877	149	18	10mhz	10mhz	NOUN
ap-4877	149	19	.	.	PUNCT
ap-4877	150	1	for	for	ADP
ap-4877	150	2	the	the	DET
ap-4877	150	3	sram	sram	PROPN
ap-4877	150	4	cell	cell	NOUN
ap-4877	150	5	,	,	PUNCT
ap-4877	150	6	the	the	DET
ap-4877	150	7	inputs	input	NOUN
ap-4877	150	8	are	be	AUX
ap-4877	150	9	chosen	choose	VERB
ap-4877	150	10	so	so	SCONJ
ap-4877	150	11	that	that	SCONJ
ap-4877	150	12	the	the	DET
ap-4877	150	13	cell	cell	NOUN
ap-4877	150	14	is	be	AUX
ap-4877	150	15	maintained	maintain	VERB
ap-4877	150	16	both	both	PRON
ap-4877	150	17	in	in	ADP
ap-4877	150	18	read	read	NOUN
ap-4877	150	19	and	and	CCONJ
ap-4877	150	20	write	write	VERB
ap-4877	150	21	mode	mode	NOUN
ap-4877	150	22	in	in	ADP
ap-4877	150	23	alternate	alternate	ADJ
ap-4877	150	24	clock	clock	NOUN
ap-4877	150	25	cycles	cycle	NOUN
ap-4877	150	26	.	.	PUNCT
ap-4877	151	1	for	for	ADP
ap-4877	151	2	a	a	DET
ap-4877	151	3	2	2	NUM
ap-4877	151	4	:	:	SYM
ap-4877	151	5	1	1	NUM
ap-4877	151	6	multiplexer	multiplexer	NOUN
ap-4877	151	7	,	,	PUNCT
ap-4877	151	8	the	the	DET
ap-4877	151	9	input	input	NOUN
ap-4877	151	10	vectors	vector	NOUN
ap-4877	151	11	are	be	AUX
ap-4877	151	12	chosen	choose	VERB
ap-4877	151	13	to	to	PART
ap-4877	151	14	represent	represent	VERB
ap-4877	151	15	a	a	DET
ap-4877	151	16	sample	sample	NOUN
ap-4877	151	17	of	of	ADP
ap-4877	151	18	possible	possible	ADJ
ap-4877	151	19	inputs	input	NOUN
ap-4877	151	20	,	,	PUNCT
ap-4877	151	21	with	with	ADP
ap-4877	151	22	at	at	ADV
ap-4877	151	23	least	least	ADV
ap-4877	151	24	two	two	NUM
ap-4877	151	25	of	of	ADP
ap-4877	151	26	the	the	DET
ap-4877	151	27	four	four	NUM
ap-4877	151	28	input	input	NOUN
ap-4877	151	29	bits	bit	NOUN
ap-4877	151	30	at	at	ADP
ap-4877	151	31	every	every	DET
ap-4877	151	32	clock	clock	NOUN
ap-4877	151	33	cycle	cycle	NOUN
ap-4877	151	34	change	change	NOUN
ap-4877	151	35	.	.	PUNCT
ap-4877	152	1	a	a	DET
ap-4877	152	2	circuit	circuit	NOUN
ap-4877	152	3	implementation	implementation	NOUN
ap-4877	152	4	of	of	ADP
ap-4877	152	5	the	the	DET
ap-4877	152	6	vco	vco	PROPN
ap-4877	152	7	consists	consist	VERB
ap-4877	152	8	of	of	ADP
ap-4877	152	9	an	an	DET
ap-4877	152	10	odd	odd	ADJ
ap-4877	152	11	number	number	NOUN
ap-4877	152	12	of	of	ADP
ap-4877	152	13	inverting	inverting	NOUN
ap-4877	152	14	stages	stage	NOUN
ap-4877	152	15	and	and	CCONJ
ap-4877	152	16	its	its	PRON
ap-4877	152	17	working	working	NOUN
ap-4877	152	18	is	be	AUX
ap-4877	152	19	controlled	control	VERB
ap-4877	152	20	by	by	ADP
ap-4877	152	21	the	the	DET
ap-4877	152	22	voltage	voltage	NOUN
ap-4877	152	23	applied	apply	VERB
ap-4877	152	24	to	to	ADP
ap-4877	152	25	it	it	PRON
ap-4877	152	26	.	.	PUNCT
ap-4877	153	1	for	for	ADP
ap-4877	153	2	a	a	DET
ap-4877	153	3	simulation	simulation	NOUN
ap-4877	153	4	of	of	ADP
ap-4877	153	5	the	the	DET
ap-4877	153	6	vco	vco	PROPN
ap-4877	153	7	,	,	PUNCT
ap-4877	153	8	0.9v	0.9v	PRON
ap-4877	153	9	control	control	NOUN
ap-4877	153	10	voltage	voltage	NOUN
ap-4877	153	11	is	be	AUX
ap-4877	153	12	applied	apply	VERB
ap-4877	153	13	and	and	CCONJ
ap-4877	153	14	a	a	DET
ap-4877	153	15	power	power	NOUN
ap-4877	153	16	estimation	estimation	NOUN
ap-4877	153	17	is	be	AUX
ap-4877	153	18	done	do	VERB
ap-4877	153	19	.	.	PUNCT
ap-4877	154	1	figures	figure	NOUN
ap-4877	154	2	6–9	6–9	NUM
ap-4877	154	3	show	show	VERB
ap-4877	154	4	the	the	DET
ap-4877	154	5	integration	integration	NOUN
ap-4877	154	6	of	of	ADP
ap-4877	154	7	inverter	inverter	NOUN
ap-4877	154	8	,	,	PUNCT
ap-4877	154	9	2	2	NUM
ap-4877	154	10	:	:	SYM
ap-4877	154	11	1	1	NUM
ap-4877	154	12	multiplexer	multiplexer	NOUN
ap-4877	154	13	,	,	PUNCT
ap-4877	154	14	vco	vco	PROPN
ap-4877	154	15	and	and	CCONJ
ap-4877	154	16	sram	sram	PROPN
ap-4877	154	17	cell	cell	NOUN
ap-4877	154	18	within	within	ADP
ap-4877	154	19	the	the	DET
ap-4877	154	20	llcr	llcr	NOUN
ap-4877	154	21	respectively	respectively	ADV
ap-4877	154	22	.	.	PUNCT
ap-4877	155	1	28	28	NUM
ap-4877	155	2	vol	vol	NOUN
ap-4877	155	3	.	.	PUNCT
ap-4877	156	1	59	59	NUM
ap-4877	156	2	no	no	NOUN
ap-4877	156	3	.	.	PROPN
ap-4877	157	1	1/2019	1/2019	NUM
ap-4877	157	2	low	low	ADJ
ap-4877	157	3	leakage	leakage	NOUN
ap-4877	157	4	charge	charge	NOUN
ap-4877	157	5	recycling	recycling	NOUN
ap-4877	157	6	technique	technique	NOUN
ap-4877	157	7	figure	figure	NOUN
ap-4877	157	8	10	10	NUM
ap-4877	157	9	.	.	PUNCT
ap-4877	158	1	effect	effect	NOUN
ap-4877	158	2	of	of	ADP
ap-4877	158	3	n	n	PROPN
ap-4877	158	4	on	on	ADP
ap-4877	158	5	dynamic	dynamic	ADJ
ap-4877	158	6	power	power	NOUN
ap-4877	158	7	.	.	PUNCT
ap-4877	159	1	figure	figure	NOUN
ap-4877	159	2	11	11	NUM
ap-4877	159	3	.	.	PUNCT
ap-4877	160	1	effect	effect	NOUN
ap-4877	160	2	of	of	ADP
ap-4877	160	3	n	n	NOUN
ap-4877	160	4	on	on	ADP
ap-4877	160	5	static	static	ADJ
ap-4877	160	6	power	power	NOUN
ap-4877	160	7	.	.	PUNCT
ap-4877	161	1	n	n	PRON
ap-4877	161	2	inverter	inverter	ADJ
ap-4877	161	3	power	power	NOUN
ap-4877	161	4	mux	mux	PROPN
ap-4877	161	5	power	power	PROPN
ap-4877	161	6	sram	sram	PROPN
ap-4877	161	7	power	power	PROPN
ap-4877	161	8	vco	vco	PROPN
ap-4877	161	9	power	power	NOUN
ap-4877	161	10	gated	gate	VERB
ap-4877	161	11	gated	gate	VERB
ap-4877	161	12	gated	gate	VERB
ap-4877	161	13	gated	gate	VERB
ap-4877	161	14	inverter	inverter	ADJ
ap-4877	161	15	mux	mux	PROPN
ap-4877	161	16	sram	sram	PROPN
ap-4877	161	17	vco	vco	PROPN
ap-4877	161	18	2	2	NUM
ap-4877	161	19	1.21	1.21	NUM
ap-4877	161	20	·	·	SYM
ap-4877	161	21	10−7	10−7	NUM
ap-4877	161	22	7.85	7.85	NUM
ap-4877	161	23	·	·	PUNCT
ap-4877	161	24	10−8	10−8	NUM
ap-4877	161	25	9.07	9.07	NUM
ap-4877	161	26	·	·	PUNCT
ap-4877	161	27	10−8	10−8	NUM
ap-4877	161	28	6.55	6.55	NUM
ap-4877	161	29	·	·	PUNCT
ap-4877	161	30	10−8	10−8	NUM
ap-4877	161	31	6.51	6.51	NUM
ap-4877	161	32	·	·	PUNCT
ap-4877	161	33	10−6	10−6	NUM
ap-4877	161	34	4.47	4.47	NUM
ap-4877	161	35	·	·	PUNCT
ap-4877	161	36	10−6	10−6	NUM
ap-4877	161	37	1.34	1.34	NUM
ap-4877	161	38	·	·	SYM
ap-4877	161	39	10−5	10−5	NUM
ap-4877	161	40	5.96	5.96	NUM
ap-4877	161	41	·	·	PUNCT
ap-4877	162	1	10−6	10−6	NUM
ap-4877	162	2	3	3	NUM
ap-4877	162	3	1.80	1.80	NUM
ap-4877	162	4	·	·	SYM
ap-4877	162	5	10−7	10−7	NUM
ap-4877	162	6	1.03	1.03	NUM
ap-4877	162	7	·	·	SYM
ap-4877	162	8	10−7	10−7	NUM
ap-4877	162	9	1.37	1.37	NUM
ap-4877	162	10	·	·	SYM
ap-4877	162	11	10−7	10−7	NUM
ap-4877	162	12	9.56	9.56	NUM
ap-4877	162	13	·	·	PUNCT
ap-4877	162	14	10−8	10−8	NUM
ap-4877	162	15	9.70	9.70	NUM
ap-4877	162	16	·	·	PUNCT
ap-4877	162	17	10−6	10−6	NUM
ap-4877	162	18	6.67	6.67	NUM
ap-4877	162	19	·	·	SYM
ap-4877	163	1	10−6	10−6	NUM
ap-4877	163	2	2.00	2.00	NUM
ap-4877	163	3	·	·	SYM
ap-4877	163	4	10−5	10−5	NUM
ap-4877	163	5	8.91	8.91	NUM
ap-4877	163	6	·	·	PUNCT
ap-4877	163	7	10−6	10−6	NUM
ap-4877	163	8	4	4	NUM
ap-4877	163	9	2.39	2.39	NUM
ap-4877	163	10	·	·	SYM
ap-4877	163	11	10−7	10−7	NUM
ap-4877	163	12	1.25	1.25	NUM
ap-4877	163	13	·	·	SYM
ap-4877	163	14	10−7	10−7	NUM
ap-4877	163	15	1.82	1.82	NUM
ap-4877	163	16	·	·	SYM
ap-4877	163	17	10−7	10−7	NUM
ap-4877	163	18	1.27	1.27	NUM
ap-4877	163	19	·	·	SYM
ap-4877	163	20	10−7	10−7	NUM
ap-4877	163	21	1.29	1.29	NUM
ap-4877	163	22	·	·	PUNCT
ap-4877	163	23	10−5	10−5	NUM
ap-4877	163	24	8.86	8.86	NUM
ap-4877	163	25	·	·	PUNCT
ap-4877	163	26	10−6	10−6	NUM
ap-4877	163	27	2.67	2.67	NUM
ap-4877	163	28	·	·	SYM
ap-4877	163	29	10−5	10−5	NUM
ap-4877	163	30	1.19	1.19	NUM
ap-4877	163	31	·	·	SYM
ap-4877	163	32	10−5	10−5	NUM
ap-4877	163	33	5	5	NUM
ap-4877	163	34	2.98	2.98	NUM
ap-4877	163	35	·	·	PUNCT
ap-4877	163	36	10−7	10−7	NUM
ap-4877	163	37	1.38	1.38	NUM
ap-4877	163	38	·	·	SYM
ap-4877	163	39	10−7	10−7	NUM
ap-4877	163	40	2.27	2.27	NUM
ap-4877	163	41	·	·	SYM
ap-4877	163	42	10−7	10−7	NUM
ap-4877	163	43	1.58	1.58	NUM
ap-4877	163	44	·	·	SYM
ap-4877	163	45	10−7	10−7	NUM
ap-4877	163	46	1.61	1.61	NUM
ap-4877	163	47	·	·	PUNCT
ap-4877	163	48	10−5	10−5	NUM
ap-4877	163	49	1.11	1.11	NUM
ap-4877	163	50	·	·	PUNCT
ap-4877	163	51	10−5	10−5	NUM
ap-4877	163	52	3.33	3.33	NUM
ap-4877	163	53	·	·	PUNCT
ap-4877	163	54	10−5	10−5	NUM
ap-4877	163	55	1.48	1.48	NUM
ap-4877	163	56	·	·	SYM
ap-4877	163	57	10−5	10−5	NUM
ap-4877	163	58	6	6	NUM
ap-4877	163	59	3.58	3.58	NUM
ap-4877	163	60	·	·	SYM
ap-4877	163	61	10−7	10−7	NUM
ap-4877	163	62	1.53	1.53	NUM
ap-4877	163	63	·	·	SYM
ap-4877	163	64	10−7	10−7	NUM
ap-4877	163	65	2.71	2.71	NUM
ap-4877	163	66	·	·	SYM
ap-4877	163	67	10−7	10−7	NUM
ap-4877	163	68	1.90	1.90	NUM
ap-4877	163	69	·	·	SYM
ap-4877	163	70	10−7	10−7	NUM
ap-4877	163	71	1.92	1.92	NUM
ap-4877	163	72	·	·	SYM
ap-4877	163	73	10−5	10−5	NUM
ap-4877	163	74	1.32	1.32	NUM
ap-4877	163	75	·	·	SYM
ap-4877	163	76	10−5	10−5	NUM
ap-4877	163	77	3.99	3.99	NUM
ap-4877	163	78	·	·	SYM
ap-4877	163	79	10−5	10−5	NUM
ap-4877	163	80	1.78	1.78	NUM
ap-4877	163	81	·	·	SYM
ap-4877	163	82	10−5	10−5	NUM
ap-4877	163	83	7	7	NUM
ap-4877	163	84	4.17	4.17	NUM
ap-4877	163	85	·	·	SYM
ap-4877	163	86	10−7	10−7	NUM
ap-4877	163	87	1.65	1.65	NUM
ap-4877	163	88	·	·	SYM
ap-4877	163	89	10−7	10−7	NUM
ap-4877	163	90	3.15	3.15	NUM
ap-4877	163	91	·	·	SYM
ap-4877	163	92	10−7	10−7	NUM
ap-4877	163	93	2.23	2.23	NUM
ap-4877	163	94	·	·	SYM
ap-4877	163	95	10−7	10−7	NUM
ap-4877	163	96	2.24	2.24	NUM
ap-4877	163	97	·	·	SYM
ap-4877	163	98	10−5	10−5	NUM
ap-4877	163	99	1.54	1.54	NUM
ap-4877	163	100	·	·	SYM
ap-4877	163	101	10−5	10−5	NUM
ap-4877	163	102	4.66	4.66	NUM
ap-4877	163	103	·	·	PUNCT
ap-4877	163	104	10−5	10−5	NUM
ap-4877	163	105	2.07	2.07	NUM
ap-4877	163	106	·	·	SYM
ap-4877	163	107	10−5	10−5	NUM
ap-4877	163	108	8	8	NUM
ap-4877	163	109	4.76	4.76	NUM
ap-4877	163	110	·	·	SYM
ap-4877	163	111	10−7	10−7	NUM
ap-4877	163	112	1.65	1.65	NUM
ap-4877	163	113	·	·	SYM
ap-4877	163	114	10−7	10−7	NUM
ap-4877	163	115	3.57	3.57	NUM
ap-4877	163	116	·	·	SYM
ap-4877	163	117	10−7	10−7	NUM
ap-4877	163	118	2.54	2.54	NUM
ap-4877	163	119	·	·	SYM
ap-4877	163	120	10−7	10−7	NUM
ap-4877	163	121	2.56	2.56	NUM
ap-4877	163	122	·	·	PUNCT
ap-4877	163	123	10−5	10−5	NUM
ap-4877	163	124	1.76	1.76	NUM
ap-4877	163	125	·	·	PUNCT
ap-4877	163	126	10−5	10−5	NUM
ap-4877	163	127	5.32	5.32	NUM
ap-4877	163	128	·	·	PUNCT
ap-4877	163	129	10−5	10−5	NUM
ap-4877	163	130	2.37	2.37	NUM
ap-4877	163	131	·	·	SYM
ap-4877	163	132	10−5	10−5	NUM
ap-4877	163	133	9	9	NUM
ap-4877	163	134	5.35	5.35	NUM
ap-4877	163	135	·	·	SYM
ap-4877	163	136	10−7	10−7	NUM
ap-4877	163	137	1.85	1.85	NUM
ap-4877	163	138	·	·	SYM
ap-4877	163	139	10−7	10−7	NUM
ap-4877	163	140	4.04	4.04	NUM
ap-4877	163	141	·	·	SYM
ap-4877	163	142	10−7	10−7	NUM
ap-4877	163	143	2.86	2.86	NUM
ap-4877	163	144	·	·	SYM
ap-4877	163	145	10−7	10−7	NUM
ap-4877	163	146	2.88	2.88	NUM
ap-4877	163	147	·	·	PUNCT
ap-4877	163	148	10−5	10−5	NUM
ap-4877	163	149	1.98	1.98	NUM
ap-4877	163	150	·	·	PUNCT
ap-4877	163	151	10−5	10−5	NUM
ap-4877	163	152	5.99	5.99	NUM
ap-4877	163	153	·	·	PUNCT
ap-4877	163	154	10−5	10−5	NUM
ap-4877	163	155	2.67	2.67	NUM
ap-4877	163	156	·	·	SYM
ap-4877	163	157	10−5	10−5	NUM
ap-4877	163	158	10	10	NUM
ap-4877	163	159	5.95	5.95	NUM
ap-4877	163	160	·	·	SYM
ap-4877	163	161	10−7	10−7	NUM
ap-4877	163	162	1.96	1.96	NUM
ap-4877	163	163	·	·	SYM
ap-4877	163	164	10−7	10−7	NUM
ap-4877	163	165	4.50	4.50	NUM
ap-4877	163	166	·	·	SYM
ap-4877	163	167	10−7	10−7	NUM
ap-4877	163	168	3.16	3.16	NUM
ap-4877	163	169	·	·	SYM
ap-4877	163	170	10−7	10−7	NUM
ap-4877	163	171	3.20	3.20	NUM
ap-4877	163	172	·	·	PUNCT
ap-4877	163	173	10−5	10−5	NUM
ap-4877	163	174	2.20	2.20	NUM
ap-4877	163	175	·	·	SYM
ap-4877	163	176	10−5	10−5	NUM
ap-4877	163	177	6.65	6.65	NUM
ap-4877	163	178	·	·	SYM
ap-4877	163	179	10−5	10−5	NUM
ap-4877	163	180	2.96	2.96	NUM
ap-4877	163	181	·	·	SYM
ap-4877	163	182	10−5	10−5	NUM
ap-4877	163	183	table	table	NOUN
ap-4877	163	184	4	4	NUM
ap-4877	163	185	.	.	PUNCT
ap-4877	163	186	effect	effect	NOUN
ap-4877	163	187	of	of	ADP
ap-4877	163	188	n	n	PROPN
ap-4877	163	189	on	on	ADP
ap-4877	163	190	dynamic	dynamic	ADJ
ap-4877	163	191	power	power	NOUN
ap-4877	163	192	(	(	PUNCT
ap-4877	163	193	values	value	NOUN
ap-4877	163	194	of	of	ADP
ap-4877	163	195	dynamic	dynamic	ADJ
ap-4877	163	196	power	power	NOUN
ap-4877	163	197	in	in	ADP
ap-4877	163	198	w	w	NOUN
ap-4877	163	199	)	)	PUNCT
ap-4877	163	200	.	.	PUNCT
ap-4877	164	1	n	n	PRON
ap-4877	164	2	inverter	inverter	ADJ
ap-4877	164	3	power	power	NOUN
ap-4877	164	4	mux	mux	PROPN
ap-4877	164	5	power	power	PROPN
ap-4877	164	6	sram	sram	PROPN
ap-4877	164	7	power	power	PROPN
ap-4877	164	8	vco	vco	PROPN
ap-4877	164	9	power	power	NOUN
ap-4877	164	10	gated	gate	VERB
ap-4877	164	11	gated	gate	VERB
ap-4877	164	12	gated	gate	VERB
ap-4877	164	13	gated	gate	VERB
ap-4877	164	14	inverter	inverter	ADJ
ap-4877	164	15	mux	mux	PROPN
ap-4877	164	16	sram	sram	PROPN
ap-4877	164	17	vco	vco	PROPN
ap-4877	164	18	2	2	NUM
ap-4877	164	19	6.93	6.93	NUM
ap-4877	164	20	·	·	PUNCT
ap-4877	164	21	10−11	10−11	NUM
ap-4877	164	22	3.42	3.42	NUM
ap-4877	164	23	·	·	PUNCT
ap-4877	164	24	10−11	10−11	NUM
ap-4877	164	25	4.16	4.16	NUM
ap-4877	164	26	·	·	PUNCT
ap-4877	164	27	10−11	10−11	NUM
ap-4877	164	28	3.34	3.34	NUM
ap-4877	164	29	·	·	SYM
ap-4877	164	30	10−11	10−11	NUM
ap-4877	164	31	1.39	1.39	NUM
ap-4877	164	32	·	·	PUNCT
ap-4877	164	33	10−10	10−10	NUM
ap-4877	164	34	9.94	9.94	NUM
ap-4877	164	35	·	·	SYM
ap-4877	164	36	10−11	10−11	NUM
ap-4877	164	37	1.38	1.38	NUM
ap-4877	164	38	·	·	PUNCT
ap-4877	164	39	10−10	10−10	NUM
ap-4877	164	40	6.62	6.62	NUM
ap-4877	164	41	·	·	SYM
ap-4877	164	42	10−11	10−11	NUM
ap-4877	165	1	3	3	NUM
ap-4877	165	2	1.07	1.07	NUM
ap-4877	165	3	·	·	PUNCT
ap-4877	165	4	10−10	10−10	NUM
ap-4877	165	5	5.72	5.72	NUM
ap-4877	165	6	·	·	SYM
ap-4877	165	7	10−11	10−11	NUM
ap-4877	165	8	7.56	7.56	NUM
ap-4877	165	9	·	·	PUNCT
ap-4877	165	10	10−11	10−11	NUM
ap-4877	165	11	4.06	4.06	NUM
ap-4877	165	12	·	·	SYM
ap-4877	165	13	10−11	10−11	PROPN
ap-4877	165	14	2.15	2.15	NUM
ap-4877	165	15	·	·	SYM
ap-4877	165	16	10−10	10−10	NUM
ap-4877	165	17	1.57	1.57	NUM
ap-4877	165	18	·	·	PUNCT
ap-4877	165	19	10−10	10−10	NUM
ap-4877	165	20	2.15	2.15	NUM
ap-4877	165	21	·	·	SYM
ap-4877	165	22	10−10	10−10	NUM
ap-4877	165	23	1.03	1.03	NUM
ap-4877	165	24	·	·	PUNCT
ap-4877	165	25	10−10	10−10	NUM
ap-4877	165	26	4	4	NUM
ap-4877	165	27	1.46	1.46	NUM
ap-4877	165	28	·	·	PUNCT
ap-4877	165	29	10−10	10−10	NUM
ap-4877	165	30	8.06	8.06	NUM
ap-4877	165	31	·	·	SYM
ap-4877	165	32	10−11	10−11	NUM
ap-4877	165	33	1.10	1.10	NUM
ap-4877	165	34	·	·	SYM
ap-4877	165	35	10−10	10−10	NUM
ap-4877	165	36	5.94	5.94	NUM
ap-4877	165	37	·	·	PUNCT
ap-4877	165	38	10−11	10−11	NUM
ap-4877	165	39	2.92	2.92	NUM
ap-4877	165	40	·	·	PUNCT
ap-4877	165	41	10−10	10−10	NUM
ap-4877	165	42	2.14	2.14	NUM
ap-4877	165	43	·	·	PUNCT
ap-4877	165	44	10−10	10−10	NUM
ap-4877	165	45	2.91	2.91	NUM
ap-4877	165	46	·	·	SYM
ap-4877	165	47	10−10	10−10	NUM
ap-4877	165	48	1.39	1.39	NUM
ap-4877	165	49	·	·	PUNCT
ap-4877	165	50	10−10	10−10	NUM
ap-4877	165	51	5	5	NUM
ap-4877	165	52	1.84	1.84	NUM
ap-4877	165	53	·	·	SYM
ap-4877	165	54	10−10	10−10	NUM
ap-4877	165	55	1.04	1.04	NUM
ap-4877	165	56	·	·	SYM
ap-4877	165	57	10−10	10−10	NUM
ap-4877	165	58	1.45	1.45	NUM
ap-4877	165	59	·	·	SYM
ap-4877	165	60	10−10	10−10	NUM
ap-4877	165	61	8.03	8.03	NUM
ap-4877	165	62	·	·	PUNCT
ap-4877	165	63	10−11	10−11	NUM
ap-4877	165	64	3.68	3.68	NUM
ap-4877	165	65	·	·	PUNCT
ap-4877	165	66	10−10	10−10	NUM
ap-4877	165	67	2.72	2.72	NUM
ap-4877	165	68	·	·	PUNCT
ap-4877	165	69	10−10	10−10	NUM
ap-4877	165	70	3.68	3.68	NUM
ap-4877	165	71	·	·	PUNCT
ap-4877	165	72	10−10	10−10	NUM
ap-4877	165	73	1.74	1.74	NUM
ap-4877	165	74	·	·	SYM
ap-4877	165	75	10−10	10−10	NUM
ap-4877	165	76	6	6	NUM
ap-4877	165	77	2.22	2.22	NUM
ap-4877	165	78	·	·	SYM
ap-4877	165	79	10−10	10−10	NUM
ap-4877	165	80	1.28	1.28	NUM
ap-4877	165	81	·	·	SYM
ap-4877	165	82	10−10	10−10	NUM
ap-4877	165	83	1.79	1.79	NUM
ap-4877	165	84	·	·	SYM
ap-4877	165	85	10−10	10−10	NUM
ap-4877	165	86	1.02	1.02	NUM
ap-4877	165	87	·	·	PUNCT
ap-4877	165	88	10−10	10−10	NUM
ap-4877	165	89	4.45	4.45	NUM
ap-4877	165	90	·	·	PUNCT
ap-4877	165	91	10−10	10−10	NUM
ap-4877	165	92	3.30	3.30	NUM
ap-4877	165	93	·	·	PUNCT
ap-4877	165	94	10−10	10−10	NUM
ap-4877	165	95	4.44	4.44	NUM
ap-4877	165	96	·	·	PUNCT
ap-4877	165	97	10−10	10−10	NUM
ap-4877	165	98	2.08	2.08	NUM
ap-4877	165	99	·	·	PUNCT
ap-4877	165	100	10−10	10−10	NUM
ap-4877	165	101	7	7	NUM
ap-4877	165	102	2.61	2.61	NUM
ap-4877	165	103	·	·	SYM
ap-4877	165	104	10−10	10−10	NUM
ap-4877	165	105	1.51	1.51	NUM
ap-4877	165	106	·	·	PUNCT
ap-4877	165	107	10−10	10−10	NUM
ap-4877	165	108	2.14	2.14	NUM
ap-4877	165	109	·	·	PUNCT
ap-4877	165	110	10−10	10−10	NUM
ap-4877	165	111	1.23	1.23	NUM
ap-4877	165	112	·	·	PUNCT
ap-4877	165	113	10−10	10−10	NUM
ap-4877	165	114	5.21	5.21	NUM
ap-4877	165	115	·	·	PUNCT
ap-4877	165	116	10−10	10−10	NUM
ap-4877	165	117	3.88	3.88	NUM
ap-4877	165	118	·	·	PUNCT
ap-4877	165	119	10−10	10−10	NUM
ap-4877	165	120	5.21	5.21	NUM
ap-4877	165	121	·	·	PUNCT
ap-4877	165	122	10−10	10−10	NUM
ap-4877	166	1	2.42	2.42	NUM
ap-4877	166	2	·	·	PUNCT
ap-4877	166	3	10−10	10−10	NUM
ap-4877	166	4	8	8	NUM
ap-4877	166	5	2.99	2.99	NUM
ap-4877	166	6	·	·	SYM
ap-4877	166	7	10−10	10−10	NUM
ap-4877	166	8	1.75	1.75	NUM
ap-4877	166	9	·	·	PUNCT
ap-4877	166	10	10−10	10−10	NUM
ap-4877	166	11	2.49	2.49	NUM
ap-4877	166	12	·	·	SYM
ap-4877	166	13	10−10	10−10	NUM
ap-4877	166	14	1.45	1.45	NUM
ap-4877	166	15	·	·	PUNCT
ap-4877	166	16	10−10	10−10	NUM
ap-4877	166	17	5.98	5.98	NUM
ap-4877	166	18	·	·	PUNCT
ap-4877	166	19	10−10	10−10	NUM
ap-4877	166	20	4.45	4.45	NUM
ap-4877	166	21	·	·	PUNCT
ap-4877	166	22	10−10	10−10	NUM
ap-4877	166	23	5.98	5.98	NUM
ap-4877	166	24	·	·	PUNCT
ap-4877	166	25	10−10	10−10	NUM
ap-4877	166	26	2.75	2.75	NUM
ap-4877	166	27	·	·	PUNCT
ap-4877	166	28	10−10	10−10	NUM
ap-4877	166	29	9	9	NUM
ap-4877	166	30	3.37	3.37	NUM
ap-4877	166	31	·	·	SYM
ap-4877	166	32	10−10	10−10	NUM
ap-4877	166	33	1.98	1.98	NUM
ap-4877	166	34	·	·	PUNCT
ap-4877	166	35	10−10	10−10	NUM
ap-4877	166	36	2.83	2.83	NUM
ap-4877	166	37	·	·	PUNCT
ap-4877	166	38	10−10	10−10	NUM
ap-4877	166	39	1.67	1.67	NUM
ap-4877	166	40	·	·	SYM
ap-4877	166	41	10−10	10−10	NUM
ap-4877	166	42	6.75	6.75	NUM
ap-4877	166	43	·	·	SYM
ap-4877	166	44	10−10	10−10	NUM
ap-4877	166	45	5.03	5.03	NUM
ap-4877	166	46	·	·	SYM
ap-4877	166	47	10−10	10−10	NUM
ap-4877	166	48	6.74	6.74	NUM
ap-4877	166	49	·	·	SYM
ap-4877	166	50	10−10	10−10	NUM
ap-4877	166	51	3.07	3.07	NUM
ap-4877	166	52	·	·	PUNCT
ap-4877	166	53	10−10	10−10	NUM
ap-4877	166	54	10	10	NUM
ap-4877	166	55	3.76	3.76	NUM
ap-4877	166	56	·	·	PUNCT
ap-4877	166	57	10−10	10−10	NUM
ap-4877	166	58	2.22	2.22	NUM
ap-4877	166	59	·	·	PUNCT
ap-4877	166	60	10−10	10−10	NUM
ap-4877	166	61	3.18	3.18	NUM
ap-4877	166	62	·	·	PUNCT
ap-4877	166	63	10−10	10−10	NUM
ap-4877	166	64	1.89	1.89	NUM
ap-4877	166	65	·	·	PUNCT
ap-4877	166	66	10−10	10−10	NUM
ap-4877	166	67	7.51	7.51	NUM
ap-4877	166	68	·	·	PUNCT
ap-4877	166	69	10−10	10−10	NUM
ap-4877	166	70	5.61	5.61	NUM
ap-4877	166	71	·	·	SYM
ap-4877	166	72	10−10	10−10	NUM
ap-4877	166	73	7.51	7.51	NUM
ap-4877	166	74	·	·	PUNCT
ap-4877	166	75	10−10	10−10	NUM
ap-4877	166	76	3.38	3.38	NUM
ap-4877	166	77	·	·	PUNCT
ap-4877	166	78	10−10	10−10	NUM
ap-4877	166	79	table	table	NOUN
ap-4877	166	80	5	5	NUM
ap-4877	166	81	.	.	PUNCT
ap-4877	166	82	effect	effect	NOUN
ap-4877	166	83	of	of	ADP
ap-4877	166	84	n	n	NOUN
ap-4877	166	85	on	on	ADP
ap-4877	166	86	static	static	ADJ
ap-4877	166	87	power	power	NOUN
ap-4877	166	88	(	(	PUNCT
ap-4877	166	89	values	value	NOUN
ap-4877	166	90	of	of	ADP
ap-4877	166	91	static	static	ADJ
ap-4877	166	92	power	power	NOUN
ap-4877	166	93	in	in	ADP
ap-4877	166	94	w	w	NOUN
ap-4877	166	95	)	)	PUNCT
ap-4877	166	96	.	.	PUNCT
ap-4877	167	1	29	29	NUM
ap-4877	167	2	manickam	manickam	PROPN
ap-4877	167	3	kavitha	kavitha	PROPN
ap-4877	167	4	,	,	PUNCT
ap-4877	167	5	alagar	alagar	PROPN
ap-4877	167	6	m.	m.	PROPN
ap-4877	167	7	kalpana	kalpana	PROPN
ap-4877	167	8	acta	acta	PROPN
ap-4877	167	9	polytechnica	polytechnica	PROPN
ap-4877	167	10	cntfet	cntfet	PROPN
ap-4877	167	11	circuits	circuit	VERB
ap-4877	167	12	dynamic	dynamic	ADJ
ap-4877	167	13	power	power	NOUN
ap-4877	167	14	static	static	ADJ
ap-4877	167	15	power	power	NOUN
ap-4877	167	16	n	n	NOUN
ap-4877	167	17	=	=	SYM
ap-4877	167	18	2	2	NUM
ap-4877	167	19	n	n	NOUN
ap-4877	167	20	=	=	SYM
ap-4877	167	21	10	10	NUM
ap-4877	167	22	n	n	NOUN
ap-4877	167	23	=	=	SYM
ap-4877	167	24	2	2	NUM
ap-4877	167	25	n	n	NOUN
ap-4877	167	26	=	=	SYM
ap-4877	167	27	10	10	NUM
ap-4877	167	28	inverter	inverter	NOUN
ap-4877	167	29	35	35	NUM
ap-4877	167	30	67	67	NUM
ap-4877	167	31	51	51	NUM
ap-4877	167	32	41	41	NUM
ap-4877	167	33	mux	mux	NOUN
ap-4877	167	34	28	28	NUM
ap-4877	167	35	30	30	NUM
ap-4877	167	36	20	20	NUM
ap-4877	167	37	41	41	NUM
ap-4877	167	38	sram	sram	NOUN
ap-4877	167	39	31	31	NUM
ap-4877	167	40	31	31	NUM
ap-4877	167	41	28	28	NUM
ap-4877	167	42	25	25	NUM
ap-4877	167	43	vco	vco	PROPN
ap-4877	167	44	56	56	NUM
ap-4877	167	45	55	55	NUM
ap-4877	167	46	52	52	NUM
ap-4877	167	47	55	55	NUM
ap-4877	167	48	table	table	NOUN
ap-4877	167	49	6	6	NUM
ap-4877	167	50	.	.	PUNCT
ap-4877	167	51	percentage	percentage	NOUN
ap-4877	167	52	savings	saving	NOUN
ap-4877	167	53	of	of	ADP
ap-4877	167	54	power	power	NOUN
ap-4877	167	55	gated	gate	VERB
ap-4877	167	56	circuits	circuit	NOUN
ap-4877	167	57	when	when	SCONJ
ap-4877	167	58	n	n	PRON
ap-4877	167	59	is	be	AUX
ap-4877	167	60	varied	varied	ADJ
ap-4877	167	61	.	.	PUNCT
ap-4877	168	1	figure	figure	NOUN
ap-4877	168	2	12	12	NUM
ap-4877	168	3	.	.	PUNCT
ap-4877	169	1	effect	effect	NOUN
ap-4877	169	2	of	of	ADP
ap-4877	169	3	dcnt	dcnt	ADJ
ap-4877	169	4	on	on	ADP
ap-4877	169	5	dynamic	dynamic	ADJ
ap-4877	169	6	power	power	NOUN
ap-4877	169	7	.	.	PUNCT
ap-4877	170	1	figure	figure	NOUN
ap-4877	170	2	13	13	NUM
ap-4877	170	3	.	.	PUNCT
ap-4877	171	1	effect	effect	NOUN
ap-4877	171	2	of	of	ADP
ap-4877	171	3	dcnt	dcnt	ADJ
ap-4877	171	4	on	on	ADP
ap-4877	171	5	static	static	ADJ
ap-4877	171	6	power	power	NOUN
ap-4877	171	7	.	.	PUNCT
ap-4877	172	1	cntfet	cntfet	PROPN
ap-4877	172	2	circuits	circuit	NOUN
ap-4877	172	3	dynamic	dynamic	ADJ
ap-4877	172	4	power	power	NOUN
ap-4877	172	5	static	static	ADJ
ap-4877	172	6	power	power	NOUN
ap-4877	172	7	dcnt	dcnt	ADJ
ap-4877	172	8	=	=	SYM
ap-4877	172	9	1	1	NUM
ap-4877	172	10	nm	nm	NOUN
ap-4877	172	11	dcnt	dcnt	ADJ
ap-4877	172	12	=	=	SYM
ap-4877	172	13	2	2	NUM
ap-4877	172	14	nm	nm	NOUN
ap-4877	172	15	dcnt	dcnt	ADJ
ap-4877	172	16	=	=	SYM
ap-4877	172	17	1	1	NUM
ap-4877	172	18	nm	nm	NOUN
ap-4877	172	19	dcnt	dcnt	ADJ
ap-4877	172	20	=	=	SYM
ap-4877	172	21	2	2	NUM
ap-4877	172	22	nm	nm	NOUN
ap-4877	172	23	inverter	inverter	NOUN
ap-4877	172	24	6	6	NUM
ap-4877	172	25	43	43	NUM
ap-4877	172	26	8	8	NUM
ap-4877	172	27	39	39	NUM
ap-4877	172	28	mux	mux	NOUN
ap-4877	172	29	2	2	NUM
ap-4877	172	30	34	34	NUM
ap-4877	172	31	59	59	NUM
ap-4877	172	32	37	37	NUM
ap-4877	172	33	sram	sram	NOUN
ap-4877	172	34	29	29	NUM
ap-4877	172	35	36	36	NUM
ap-4877	172	36	33	33	NUM
ap-4877	172	37	21	21	NUM
ap-4877	172	38	vco	vco	PROPN
ap-4877	172	39	55	55	NUM
ap-4877	172	40	56	56	NUM
ap-4877	172	41	38	38	NUM
ap-4877	172	42	55	55	NUM
ap-4877	172	43	table	table	NOUN
ap-4877	172	44	7	7	NUM
ap-4877	172	45	.	.	PUNCT
ap-4877	172	46	percentage	percentage	NOUN
ap-4877	172	47	savings	saving	NOUN
ap-4877	172	48	of	of	ADP
ap-4877	172	49	power	power	NOUN
ap-4877	172	50	gated	gate	VERB
ap-4877	172	51	circuits	circuit	NOUN
ap-4877	172	52	when	when	SCONJ
ap-4877	172	53	dcnt	dcnt	ADJ
ap-4877	172	54	is	be	AUX
ap-4877	172	55	varied	varied	ADJ
ap-4877	172	56	.	.	PUNCT
ap-4877	173	1	cntfet	cntfet	PROPN
ap-4877	173	2	circuits	circuit	NOUN
ap-4877	174	1	dynamic	dynamic	ADJ
ap-4877	174	2	power	power	NOUN
ap-4877	174	3	static	static	NOUN
ap-4877	174	4	power	power	NOUN
ap-4877	174	5	s	s	PART
ap-4877	174	6	=	=	SYM
ap-4877	174	7	2	2	NUM
ap-4877	174	8	nm	nm	NOUN
ap-4877	174	9	s	s	NOUN
ap-4877	174	10	=	=	SYM
ap-4877	174	11	20	20	NUM
ap-4877	174	12	nm	nm	NOUN
ap-4877	174	13	s	s	NOUN
ap-4877	174	14	=	=	SYM
ap-4877	174	15	2	2	NUM
ap-4877	174	16	nm	nm	NOUN
ap-4877	174	17	s	s	NOUN
ap-4877	174	18	=	=	SYM
ap-4877	174	19	20	20	NUM
ap-4877	174	20	nm	nm	NOUN
ap-4877	174	21	inverter	inverter	NOUN
ap-4877	174	22	21	21	NUM
ap-4877	174	23	35	35	NUM
ap-4877	174	24	51	51	NUM
ap-4877	174	25	51	51	NUM
ap-4877	174	26	mux	mux	NOUN
ap-4877	174	27	21	21	NUM
ap-4877	174	28	28	28	NUM
ap-4877	174	29	20	20	NUM
ap-4877	174	30	20	20	NUM
ap-4877	174	31	sram	sram	NOUN
ap-4877	174	32	28	28	NUM
ap-4877	174	33	31	31	NUM
ap-4877	174	34	41	41	NUM
ap-4877	174	35	28	28	NUM
ap-4877	174	36	vco	vco	PROPN
ap-4877	174	37	53	53	NUM
ap-4877	174	38	56	56	NUM
ap-4877	174	39	53	53	NUM
ap-4877	174	40	52	52	NUM
ap-4877	174	41	table	table	NOUN
ap-4877	174	42	8	8	NUM
ap-4877	174	43	.	.	PUNCT
ap-4877	174	44	percentage	percentage	NOUN
ap-4877	174	45	savings	saving	NOUN
ap-4877	174	46	of	of	ADP
ap-4877	174	47	power	power	NOUN
ap-4877	174	48	gated	gate	VERB
ap-4877	174	49	circuits	circuit	NOUN
ap-4877	174	50	when	when	SCONJ
ap-4877	174	51	pitch	pitch	NOUN
ap-4877	174	52	is	be	AUX
ap-4877	174	53	varied	varied	ADJ
ap-4877	174	54	.	.	PUNCT
ap-4877	175	1	30	30	NUM
ap-4877	175	2	vol	vol	NOUN
ap-4877	175	3	.	.	PUNCT
ap-4877	176	1	59	59	NUM
ap-4877	176	2	no	no	NOUN
ap-4877	176	3	.	.	PROPN
ap-4877	177	1	1/2019	1/2019	NUM
ap-4877	177	2	low	low	ADJ
ap-4877	177	3	leakage	leakage	NOUN
ap-4877	177	4	charge	charge	NOUN
ap-4877	177	5	recycling	recycling	NOUN
ap-4877	177	6	technique	technique	NOUN
ap-4877	177	7	figure	figure	NOUN
ap-4877	177	8	14	14	NUM
ap-4877	177	9	.	.	PUNCT
ap-4877	178	1	effect	effect	NOUN
ap-4877	178	2	of	of	ADP
ap-4877	178	3	pitch	pitch	NOUN
ap-4877	178	4	on	on	ADP
ap-4877	178	5	dynamic	dynamic	ADJ
ap-4877	178	6	power	power	NOUN
ap-4877	178	7	.	.	PUNCT
ap-4877	179	1	figure	figure	NOUN
ap-4877	179	2	15	15	NUM
ap-4877	179	3	.	.	PUNCT
ap-4877	180	1	effect	effect	NOUN
ap-4877	180	2	of	of	ADP
ap-4877	180	3	pitch	pitch	NOUN
ap-4877	180	4	on	on	ADP
ap-4877	180	5	static	static	ADJ
ap-4877	180	6	power	power	NOUN
ap-4877	180	7	.	.	PUNCT
ap-4877	181	1	figure	figure	NOUN
ap-4877	181	2	16	16	NUM
ap-4877	181	3	.	.	PUNCT
ap-4877	182	1	effect	effect	NOUN
ap-4877	182	2	of	of	ADP
ap-4877	182	3	tox	tox	NOUN
ap-4877	182	4	on	on	ADP
ap-4877	182	5	dynamic	dynamic	ADJ
ap-4877	182	6	power	power	NOUN
ap-4877	182	7	.	.	PUNCT
ap-4877	183	1	figure	figure	NOUN
ap-4877	183	2	17	17	NUM
ap-4877	183	3	.	.	PUNCT
ap-4877	184	1	effect	effect	NOUN
ap-4877	184	2	of	of	ADP
ap-4877	184	3	tox	tox	NOUN
ap-4877	184	4	on	on	ADP
ap-4877	184	5	static	static	ADJ
ap-4877	184	6	power	power	NOUN
ap-4877	184	7	.	.	PUNCT
ap-4877	185	1	31	31	NUM
ap-4877	185	2	manickam	manickam	PROPN
ap-4877	185	3	kavitha	kavitha	PROPN
ap-4877	185	4	,	,	PUNCT
ap-4877	185	5	alagar	alagar	PROPN
ap-4877	185	6	m.	m.	PROPN
ap-4877	185	7	kalpana	kalpana	PROPN
ap-4877	185	8	acta	acta	PROPN
ap-4877	185	9	polytechnica	polytechnica	PROPN
ap-4877	185	10	cntfet	cntfet	PROPN
ap-4877	185	11	circuits	circuit	VERB
ap-4877	185	12	dynamic	dynamic	ADJ
ap-4877	185	13	power	power	NOUN
ap-4877	185	14	static	static	ADJ
ap-4877	185	15	power	power	NOUN
ap-4877	185	16	tox	tox	NOUN
ap-4877	185	17	=	=	SYM
ap-4877	185	18	0.5	0.5	NUM
ap-4877	185	19	nm	nm	NOUN
ap-4877	185	20	tox	tox	NOUN
ap-4877	185	21	=	=	SYM
ap-4877	185	22	5	5	NUM
ap-4877	185	23	nm	nm	NOUN
ap-4877	185	24	tox	tox	NOUN
ap-4877	185	25	=	=	SYM
ap-4877	185	26	0.5	0.5	NUM
ap-4877	185	27	nm	nm	NOUN
ap-4877	185	28	tox	tox	NOUN
ap-4877	185	29	=	=	SYM
ap-4877	185	30	5	5	NUM
ap-4877	185	31	nm	nm	NOUN
ap-4877	185	32	inverter	inverter	VERB
ap-4877	185	33	45	45	NUM
ap-4877	185	34	33	33	NUM
ap-4877	185	35	51	51	NUM
ap-4877	185	36	51	51	NUM
ap-4877	185	37	mux	mux	NOUN
ap-4877	185	38	34	34	NUM
ap-4877	185	39	29	29	NUM
ap-4877	185	40	19	19	NUM
ap-4877	185	41	20	20	NUM
ap-4877	185	42	sram	sram	NOUN
ap-4877	185	43	29	29	NUM
ap-4877	185	44	31	31	NUM
ap-4877	185	45	13	13	NUM
ap-4877	185	46	43	43	NUM
ap-4877	185	47	vco	vco	NOUN
ap-4877	185	48	58	58	NUM
ap-4877	185	49	56	56	NUM
ap-4877	185	50	51	51	NUM
ap-4877	185	51	52	52	NUM
ap-4877	185	52	table	table	NOUN
ap-4877	185	53	9	9	NUM
ap-4877	185	54	.	.	PUNCT
ap-4877	185	55	percentage	percentage	NOUN
ap-4877	185	56	savings	saving	NOUN
ap-4877	185	57	of	of	ADP
ap-4877	185	58	power	power	NOUN
ap-4877	185	59	gated	gate	VERB
ap-4877	185	60	circuits	circuit	NOUN
ap-4877	185	61	when	when	SCONJ
ap-4877	185	62	tox	tox	NOUN
ap-4877	185	63	is	be	AUX
ap-4877	185	64	varied	varied	ADJ
ap-4877	185	65	.	.	PUNCT
ap-4877	186	1	4.1	4.1	NUM
ap-4877	186	2	.	.	PUNCT
ap-4877	186	3	impact	impact	NOUN
ap-4877	186	4	of	of	ADP
ap-4877	186	5	the	the	DET
ap-4877	186	6	number	number	NOUN
ap-4877	186	7	of	of	ADP
ap-4877	186	8	carbon	carbon	NOUN
ap-4877	186	9	nanotubes	nanotube	NOUN
ap-4877	186	10	(	(	PUNCT
ap-4877	186	11	n	n	CCONJ
ap-4877	186	12	)	)	PUNCT
ap-4877	186	13	in	in	ADP
ap-4877	186	14	the	the	DET
ap-4877	186	15	cntfet	cntfet	NOUN
ap-4877	186	16	,	,	PUNCT
ap-4877	186	17	the	the	DET
ap-4877	186	18	number	number	NOUN
ap-4877	186	19	of	of	ADP
ap-4877	186	20	tubes	tube	NOUN
ap-4877	186	21	is	be	AUX
ap-4877	186	22	the	the	DET
ap-4877	186	23	important	important	ADJ
ap-4877	186	24	design	design	NOUN
ap-4877	186	25	parameter	parameter	NOUN
ap-4877	186	26	for	for	ADP
ap-4877	186	27	changing	change	VERB
ap-4877	186	28	the	the	DET
ap-4877	186	29	current	current	ADJ
ap-4877	186	30	and	and	CCONJ
ap-4877	186	31	resistance	resistance	NOUN
ap-4877	186	32	.	.	PUNCT
ap-4877	187	1	to	to	PART
ap-4877	187	2	provide	provide	VERB
ap-4877	187	3	a	a	DET
ap-4877	187	4	competitive	competitive	ADJ
ap-4877	187	5	performance	performance	NOUN
ap-4877	187	6	over	over	ADP
ap-4877	187	7	the	the	DET
ap-4877	187	8	mosfet	mosfet	NOUN
ap-4877	187	9	,	,	PUNCT
ap-4877	187	10	a	a	DET
ap-4877	187	11	single	single	ADJ
ap-4877	187	12	nanotube	nanotube	ADJ
ap-4877	187	13	transistor	transistor	NOUN
ap-4877	187	14	is	be	AUX
ap-4877	187	15	not	not	PART
ap-4877	187	16	enough	enough	ADJ
ap-4877	187	17	.	.	PUNCT
ap-4877	188	1	in	in	ADP
ap-4877	188	2	order	order	NOUN
ap-4877	188	3	to	to	PART
ap-4877	188	4	guarantee	guarantee	VERB
ap-4877	188	5	a	a	DET
ap-4877	188	6	sufficient	sufficient	ADJ
ap-4877	188	7	current	current	ADJ
ap-4877	188	8	supply	supply	NOUN
ap-4877	188	9	,	,	PUNCT
ap-4877	188	10	the	the	DET
ap-4877	188	11	number	number	NOUN
ap-4877	188	12	of	of	ADP
ap-4877	188	13	nanotubes	nanotube	NOUN
ap-4877	188	14	has	have	VERB
ap-4877	188	15	to	to	PART
ap-4877	188	16	be	be	AUX
ap-4877	188	17	increased	increase	VERB
ap-4877	188	18	.	.	PUNCT
ap-4877	189	1	the	the	DET
ap-4877	189	2	cntfet	cntfet	PROPN
ap-4877	189	3	on	on	ADP
ap-4877	189	4	-	-	PUNCT
ap-4877	189	5	current	current	NOUN
ap-4877	189	6	is	be	AUX
ap-4877	189	7	approximately	approximately	ADV
ap-4877	189	8	expressed	express	VERB
ap-4877	189	9	as	as	ADP
ap-4877	189	10	icnfet	icnfet	ADJ
ap-4877	189	11	=	=	PUNCT
ap-4877	189	12	ngcnt(vdd	ngcnt(vdd	NOUN
ap-4877	189	13	−	−	PROPN
ap-4877	189	14	v	v	NOUN
ap-4877	189	15	′ss	′ss	NOUN
ap-4877	189	16	−	−	NOUN
ap-4877	189	17	vth	vth	NOUN
ap-4877	189	18	,	,	PUNCT
ap-4877	189	19	cnt	cnt	PROPN
ap-4877	189	20	)	)	PUNCT
ap-4877	189	21	,	,	PUNCT
ap-4877	189	22	(	(	PUNCT
ap-4877	189	23	4	4	X
ap-4877	189	24	)	)	PUNCT
ap-4877	189	25	where	where	SCONJ
ap-4877	189	26	n	n	PRON
ap-4877	189	27	is	be	AUX
ap-4877	189	28	the	the	DET
ap-4877	189	29	number	number	NOUN
ap-4877	189	30	of	of	ADP
ap-4877	189	31	nanotubes	nanotube	NOUN
ap-4877	189	32	per	per	ADP
ap-4877	189	33	device	device	NOUN
ap-4877	189	34	,	,	PUNCT
ap-4877	189	35	gcnt	gcnt	PROPN
ap-4877	189	36	is	be	AUX
ap-4877	189	37	the	the	DET
ap-4877	189	38	transconductance	transconductance	NOUN
ap-4877	189	39	per	per	ADP
ap-4877	189	40	nanotube	nanotube	NOUN
ap-4877	189	41	,	,	PUNCT
ap-4877	189	42	vth	vth	NOUN
ap-4877	189	43	,	,	PUNCT
ap-4877	189	44	cnt	cnt	PROPN
ap-4877	189	45	is	be	AUX
ap-4877	189	46	the	the	DET
ap-4877	189	47	threshold	threshold	NOUN
ap-4877	189	48	voltage	voltage	NOUN
ap-4877	189	49	,	,	PUNCT
ap-4877	189	50	and	and	CCONJ
ap-4877	189	51	v	v	NUM
ap-4877	189	52	′ss	′ss	NOUN
ap-4877	189	53	is	be	AUX
ap-4877	189	54	the	the	DET
ap-4877	189	55	voltage	voltage	NOUN
ap-4877	189	56	drop	drop	NOUN
ap-4877	189	57	between	between	ADP
ap-4877	189	58	the	the	DET
ap-4877	189	59	inner	inner	ADJ
ap-4877	189	60	and	and	CCONJ
ap-4877	189	61	external	external	ADJ
ap-4877	189	62	source	source	NOUN
ap-4877	189	63	node	node	NOUN
ap-4877	189	64	[	[	X
ap-4877	189	65	21	21	NUM
ap-4877	189	66	]	]	PUNCT
ap-4877	189	67	given	give	VERB
ap-4877	189	68	by	by	ADP
ap-4877	189	69	v	v	NUM
ap-4877	189	70	′ss	′ss	NOUN
ap-4877	189	71	=	=	PUNCT
ap-4877	189	72	icnfetlsρs	icnfetlsρs	ADJ
ap-4877	189	73	n	n	X
ap-4877	189	74	,	,	PUNCT
ap-4877	189	75	(	(	PUNCT
ap-4877	189	76	5	5	X
ap-4877	189	77	)	)	PUNCT
ap-4877	189	78	where	where	SCONJ
ap-4877	189	79	ls	ls	PROPN
ap-4877	189	80	is	be	AUX
ap-4877	189	81	the	the	DET
ap-4877	189	82	source	source	NOUN
ap-4877	189	83	length	length	NOUN
ap-4877	189	84	and	and	CCONJ
ap-4877	189	85	ρs	ρs	ADV
ap-4877	189	86	is	be	AUX
ap-4877	189	87	the	the	DET
ap-4877	189	88	source	source	NOUN
ap-4877	189	89	resistance	resistance	NOUN
ap-4877	189	90	of	of	ADP
ap-4877	189	91	a	a	DET
ap-4877	189	92	doped	doped	ADJ
ap-4877	189	93	cnt	cnt	PROPN
ap-4877	189	94	.	.	PROPN
ap-4877	189	95	from	from	ADP
ap-4877	189	96	equation	equation	NOUN
ap-4877	189	97	(	(	PUNCT
ap-4877	189	98	4	4	NUM
ap-4877	189	99	)	)	PUNCT
ap-4877	189	100	and	and	CCONJ
ap-4877	189	101	equation	equation	NOUN
ap-4877	189	102	(	(	PUNCT
ap-4877	189	103	5	5	NUM
ap-4877	189	104	)	)	PUNCT
ap-4877	189	105	the	the	DET
ap-4877	189	106	cntfet	cntfet	ADJ
ap-4877	189	107	current	current	ADJ
ap-4877	189	108	expression	expression	NOUN
ap-4877	189	109	can	can	AUX
ap-4877	189	110	be	be	AUX
ap-4877	189	111	rewritten	rewrite	VERB
ap-4877	189	112	as	as	ADP
ap-4877	189	113	icnfet	icnfet	ADJ
ap-4877	189	114	=	=	SYM
ap-4877	189	115	ngcnt(vss	ngcnt(vss	NOUN
ap-4877	189	116	−	−	PROPN
ap-4877	189	117	vth	vth	NOUN
ap-4877	189	118	,	,	PUNCT
ap-4877	189	119	cnt	cnt	X
ap-4877	189	120	)	)	PUNCT
ap-4877	189	121	1	1	NUM
ap-4877	189	122	+	+	CCONJ
ap-4877	189	123	gcntlsρs	gcntlsρs	ADJ
ap-4877	189	124	.	.	PUNCT
ap-4877	190	1	(	(	PUNCT
ap-4877	190	2	6	6	NUM
ap-4877	190	3	)	)	PUNCT
ap-4877	190	4	equation	equation	NOUN
ap-4877	190	5	(	(	PUNCT
ap-4877	190	6	6	6	NUM
ap-4877	190	7	)	)	PUNCT
ap-4877	190	8	reveals	reveal	VERB
ap-4877	190	9	that	that	SCONJ
ap-4877	190	10	,	,	PUNCT
ap-4877	190	11	on	on	ADP
ap-4877	190	12	the	the	DET
ap-4877	190	13	one	one	NUM
ap-4877	190	14	hand	hand	NOUN
ap-4877	190	15	,	,	PUNCT
ap-4877	190	16	by	by	ADP
ap-4877	190	17	increasing	increase	VERB
ap-4877	190	18	the	the	DET
ap-4877	190	19	carbon	carbon	NOUN
ap-4877	190	20	nanotubes	nanotube	NOUN
ap-4877	190	21	,	,	PUNCT
ap-4877	190	22	the	the	DET
ap-4877	190	23	device	device	NOUN
ap-4877	190	24	on	on	ADP
ap-4877	190	25	-	-	PUNCT
ap-4877	190	26	current	current	ADJ
ap-4877	190	27	can	can	AUX
ap-4877	190	28	be	be	AUX
ap-4877	190	29	improved	improve	VERB
ap-4877	190	30	.	.	PUNCT
ap-4877	191	1	on	on	ADP
ap-4877	191	2	the	the	DET
ap-4877	191	3	other	other	ADJ
ap-4877	191	4	hand	hand	NOUN
ap-4877	191	5	,	,	PUNCT
ap-4877	191	6	the	the	DET
ap-4877	191	7	power	power	NOUN
ap-4877	191	8	dissipation	dissipation	NOUN
ap-4877	191	9	of	of	ADP
ap-4877	191	10	circuits	circuit	NOUN
ap-4877	191	11	gets	get	AUX
ap-4877	191	12	elevated	elevate	VERB
ap-4877	191	13	with	with	ADP
ap-4877	191	14	the	the	DET
ap-4877	191	15	increasing	increase	VERB
ap-4877	191	16	cnts	cnt	NOUN
ap-4877	191	17	.	.	PUNCT
ap-4877	192	1	power	power	NOUN
ap-4877	192	2	gating	gate	VERB
ap-4877	192	3	structure	structure	NOUN
ap-4877	192	4	can	can	AUX
ap-4877	192	5	be	be	AUX
ap-4877	192	6	used	use	VERB
ap-4877	192	7	to	to	PART
ap-4877	192	8	minimize	minimize	VERB
ap-4877	192	9	the	the	DET
ap-4877	192	10	power	power	NOUN
ap-4877	192	11	dissipation	dissipation	NOUN
ap-4877	192	12	.	.	PUNCT
ap-4877	193	1	figures	figure	NOUN
ap-4877	193	2	10	10	NUM
ap-4877	193	3	and	and	CCONJ
ap-4877	193	4	11	11	NUM
ap-4877	193	5	makes	make	VERB
ap-4877	193	6	it	it	PRON
ap-4877	193	7	clear	clear	ADJ
ap-4877	193	8	that	that	SCONJ
ap-4877	193	9	the	the	DET
ap-4877	193	10	power	power	NOUN
ap-4877	193	11	dissipation	dissipation	NOUN
ap-4877	193	12	of	of	ADP
ap-4877	193	13	gated	gate	VERB
ap-4877	193	14	circuits	circuit	NOUN
ap-4877	193	15	is	be	AUX
ap-4877	193	16	lesser	less	ADJ
ap-4877	193	17	,	,	PUNCT
ap-4877	193	18	compared	compare	VERB
ap-4877	193	19	to	to	ADP
ap-4877	193	20	conventional	conventional	ADJ
ap-4877	193	21	circuits	circuit	NOUN
ap-4877	193	22	.	.	PUNCT
ap-4877	194	1	tables	table	NOUN
ap-4877	194	2	4	4	NUM
ap-4877	194	3	and	and	CCONJ
ap-4877	194	4	5	5	NUM
ap-4877	194	5	present	present	VERB
ap-4877	194	6	the	the	DET
ap-4877	194	7	dynamic	dynamic	ADJ
ap-4877	194	8	and	and	CCONJ
ap-4877	194	9	static	static	ADJ
ap-4877	194	10	power	power	NOUN
ap-4877	194	11	dissipation	dissipation	NOUN
ap-4877	194	12	respectively	respectively	ADV
ap-4877	194	13	,	,	PUNCT
ap-4877	194	14	when	when	SCONJ
ap-4877	194	15	the	the	DET
ap-4877	194	16	number	number	NOUN
ap-4877	194	17	of	of	ADP
ap-4877	194	18	carbon	carbon	NOUN
ap-4877	194	19	nanotubes	nanotube	NOUN
ap-4877	194	20	is	be	AUX
ap-4877	194	21	changed	change	VERB
ap-4877	194	22	.	.	PUNCT
ap-4877	195	1	table	table	NOUN
ap-4877	195	2	6	6	NUM
ap-4877	195	3	shows	show	VERB
ap-4877	195	4	that	that	SCONJ
ap-4877	195	5	when	when	SCONJ
ap-4877	195	6	the	the	DET
ap-4877	195	7	number	number	NOUN
ap-4877	195	8	of	of	ADP
ap-4877	195	9	tubes	tube	NOUN
ap-4877	195	10	is	be	AUX
ap-4877	195	11	changed	change	VERB
ap-4877	195	12	from	from	ADP
ap-4877	195	13	2	2	NUM
ap-4877	195	14	to	to	ADP
ap-4877	195	15	10	10	NUM
ap-4877	195	16	,	,	PUNCT
ap-4877	195	17	dynamic	dynamic	ADJ
ap-4877	195	18	power	power	NOUN
ap-4877	195	19	reduction	reduction	NOUN
ap-4877	195	20	of	of	ADP
ap-4877	195	21	power	power	NOUN
ap-4877	195	22	gated	gate	VERB
ap-4877	195	23	circuits	circuit	NOUN
ap-4877	195	24	range	range	VERB
ap-4877	195	25	from	from	ADP
ap-4877	195	26	28	28	NUM
ap-4877	195	27	%	%	NOUN
ap-4877	195	28	to	to	PART
ap-4877	195	29	67	67	NUM
ap-4877	195	30	%	%	NOUN
ap-4877	195	31	and	and	CCONJ
ap-4877	195	32	standby	standby	ADJ
ap-4877	195	33	power	power	NOUN
ap-4877	195	34	reduction	reduction	NOUN
ap-4877	195	35	of	of	ADP
ap-4877	195	36	about	about	ADV
ap-4877	195	37	20	20	NUM
ap-4877	195	38	%	%	NOUN
ap-4877	195	39	to	to	PART
ap-4877	195	40	55	55	NUM
ap-4877	195	41	%	%	NOUN
ap-4877	195	42	is	be	AUX
ap-4877	195	43	achieved	achieve	VERB
ap-4877	195	44	compared	compare	VERB
ap-4877	195	45	to	to	ADP
ap-4877	195	46	ungated	ungated	ADJ
ap-4877	195	47	conventional	conventional	ADJ
ap-4877	195	48	circuits	circuit	NOUN
ap-4877	195	49	.	.	PUNCT
ap-4877	196	1	4.2	4.2	NUM
ap-4877	196	2	.	.	PUNCT
ap-4877	196	3	impact	impact	NOUN
ap-4877	196	4	of	of	ADP
ap-4877	196	5	carbon	carbon	NOUN
ap-4877	196	6	nanotube	nanotube	NOUN
ap-4877	196	7	diameter	diameter	NOUN
ap-4877	196	8	(	(	PUNCT
ap-4877	196	9	dcnt	dcnt	PROPN
ap-4877	196	10	)	)	PUNCT
ap-4877	196	11	the	the	DET
ap-4877	196	12	cntfet	cntfet	PROPN
ap-4877	196	13	diameter	diameter	NOUN
ap-4877	196	14	is	be	AUX
ap-4877	196	15	given	give	VERB
ap-4877	196	16	by	by	ADP
ap-4877	196	17	dcnt	dcnt	ADJ
ap-4877	196	18	=	=	PUNCT
ap-4877	196	19	a	a	PRON
ap-4877	196	20	√	√	ADJ
ap-4877	196	21	n2	n2	ADJ
ap-4877	196	22	1	1	NUM
ap-4877	196	23	+	+	CCONJ
ap-4877	196	24	n2	n2	ADJ
ap-4877	196	25	2	2	NUM
ap-4877	196	26	+	+	CCONJ
ap-4877	196	27	n1n2	n1n2	NOUN
ap-4877	196	28	π	π	NOUN
ap-4877	196	29	,	,	PUNCT
ap-4877	196	30	(	(	PUNCT
ap-4877	196	31	7	7	X
ap-4877	196	32	)	)	PUNCT
ap-4877	196	33	where	where	SCONJ
ap-4877	196	34	a	a	DET
ap-4877	196	35	=	=	SYM
ap-4877	196	36	2.49å	2.49å	NUM
ap-4877	196	37	is	be	AUX
ap-4877	196	38	the	the	DET
ap-4877	196	39	lattice	lattice	NOUN
ap-4877	196	40	constant	constant	ADJ
ap-4877	196	41	and	and	CCONJ
ap-4877	196	42	(	(	PUNCT
ap-4877	196	43	n1	n1	NOUN
ap-4877	196	44	,	,	PUNCT
ap-4877	196	45	n2	n2	ADJ
ap-4877	196	46	)	)	PUNCT
ap-4877	196	47	is	be	AUX
ap-4877	196	48	the	the	DET
ap-4877	196	49	chirality	chirality	NOUN
ap-4877	196	50	of	of	ADP
ap-4877	196	51	the	the	DET
ap-4877	196	52	tube	tube	NOUN
ap-4877	197	1	[	[	X
ap-4877	197	2	21	21	NUM
ap-4877	197	3	,	,	PUNCT
ap-4877	197	4	22	22	NUM
ap-4877	197	5	]	]	PUNCT
ap-4877	197	6	.	.	PUNCT
ap-4877	198	1	the	the	DET
ap-4877	198	2	electrical	electrical	ADJ
ap-4877	198	3	behaviour	behaviour	NOUN
ap-4877	198	4	and	and	CCONJ
ap-4877	198	5	performance	performance	NOUN
ap-4877	198	6	of	of	ADP
ap-4877	198	7	the	the	DET
ap-4877	198	8	cntfet	cntfet	NOUN
ap-4877	198	9	directly	directly	ADV
ap-4877	198	10	depends	depend	VERB
ap-4877	198	11	on	on	ADP
ap-4877	198	12	the	the	DET
ap-4877	198	13	cnt	cnt	PROPN
ap-4877	198	14	diameter	diameter	NOUN
ap-4877	198	15	.	.	PUNCT
ap-4877	199	1	the	the	DET
ap-4877	199	2	on	on	ADP
ap-4877	199	3	-	-	PUNCT
ap-4877	199	4	current	current	NOUN
ap-4877	199	5	in	in	ADP
ap-4877	199	6	a	a	DET
ap-4877	199	7	cntfet	cntfet	NOUN
ap-4877	199	8	is	be	AUX
ap-4877	199	9	affected	affect	VERB
ap-4877	199	10	proportionally	proportionally	ADV
ap-4877	199	11	by	by	ADP
ap-4877	199	12	the	the	DET
ap-4877	199	13	diameter	diameter	NOUN
ap-4877	199	14	.	.	PUNCT
ap-4877	200	1	for	for	ADP
ap-4877	200	2	larger	large	ADJ
ap-4877	200	3	diameters	diameter	NOUN
ap-4877	200	4	,	,	PUNCT
ap-4877	200	5	the	the	DET
ap-4877	200	6	band	band	NOUN
ap-4877	200	7	gap	gap	NOUN
ap-4877	200	8	reduces	reduce	VERB
ap-4877	200	9	while	while	SCONJ
ap-4877	200	10	the	the	DET
ap-4877	200	11	transconductance	transconductance	NOUN
ap-4877	200	12	increases	increase	VERB
ap-4877	200	13	,	,	PUNCT
ap-4877	200	14	thereby	thereby	ADV
ap-4877	200	15	improving	improve	VERB
ap-4877	200	16	the	the	DET
ap-4877	200	17	oncurrent	oncurrent	NOUN
ap-4877	200	18	strength	strength	NOUN
ap-4877	200	19	.	.	PUNCT
ap-4877	201	1	but	but	CCONJ
ap-4877	201	2	the	the	DET
ap-4877	201	3	leakage	leakage	NOUN
ap-4877	201	4	current	current	NOUN
ap-4877	201	5	is	be	AUX
ap-4877	201	6	increased	increase	VERB
ap-4877	201	7	at	at	ADP
ap-4877	201	8	the	the	DET
ap-4877	201	9	same	same	ADJ
ap-4877	201	10	time	time	NOUN
ap-4877	201	11	and	and	CCONJ
ap-4877	201	12	this	this	DET
ap-4877	201	13	problem	problem	NOUN
ap-4877	201	14	should	should	AUX
ap-4877	201	15	be	be	AUX
ap-4877	201	16	handled	handle	VERB
ap-4877	201	17	with	with	ADP
ap-4877	201	18	care	care	NOUN
ap-4877	201	19	,	,	PUNCT
ap-4877	201	20	because	because	SCONJ
ap-4877	201	21	,	,	PUNCT
ap-4877	201	22	for	for	ADP
ap-4877	201	23	a	a	DET
ap-4877	201	24	satisfactory	satisfactory	ADJ
ap-4877	201	25	performance	performance	NOUN
ap-4877	201	26	,	,	PUNCT
ap-4877	201	27	leakage	leakage	NOUN
ap-4877	201	28	should	should	AUX
ap-4877	201	29	be	be	AUX
ap-4877	201	30	maintained	maintain	VERB
ap-4877	201	31	at	at	ADP
ap-4877	201	32	a	a	DET
ap-4877	201	33	minimal	minimal	ADJ
ap-4877	201	34	level	level	NOUN
ap-4877	201	35	.	.	PUNCT
ap-4877	202	1	the	the	DET
ap-4877	202	2	power	power	NOUN
ap-4877	202	3	handling	handling	NOUN
ap-4877	202	4	ability	ability	NOUN
ap-4877	202	5	of	of	ADP
ap-4877	202	6	cnts	cnts	PROPN
ap-4877	202	7	degrades	degrade	VERB
ap-4877	202	8	with	with	ADP
ap-4877	202	9	large	large	ADJ
ap-4877	202	10	diameter	diameter	NOUN
ap-4877	202	11	values	value	NOUN
ap-4877	202	12	[	[	X
ap-4877	202	13	32	32	NUM
ap-4877	202	14	]	]	PUNCT
ap-4877	202	15	.	.	PUNCT
ap-4877	203	1	an	an	DET
ap-4877	203	2	important	important	ADJ
ap-4877	203	3	feature	feature	NOUN
ap-4877	203	4	of	of	ADP
ap-4877	203	5	the	the	DET
ap-4877	203	6	cntfet	cntfet	NOUN
ap-4877	203	7	is	be	AUX
ap-4877	203	8	that	that	SCONJ
ap-4877	203	9	its	its	PRON
ap-4877	203	10	threshold	threshold	NOUN
ap-4877	203	11	voltage	voltage	NOUN
ap-4877	203	12	can	can	AUX
ap-4877	203	13	be	be	AUX
ap-4877	203	14	varied	vary	VERB
ap-4877	203	15	by	by	ADP
ap-4877	203	16	changing	change	VERB
ap-4877	203	17	the	the	DET
ap-4877	203	18	cnt	cnt	PROPN
ap-4877	203	19	diameter	diameter	NOUN
ap-4877	203	20	.	.	PUNCT
ap-4877	204	1	equation	equation	NOUN
ap-4877	204	2	(	(	PUNCT
ap-4877	204	3	8)	8)	NUM
ap-4877	204	4	shows	show	VERB
ap-4877	204	5	that	that	SCONJ
ap-4877	204	6	the	the	DET
ap-4877	204	7	threshold	threshold	NOUN
ap-4877	204	8	voltage	voltage	NOUN
ap-4877	204	9	is	be	AUX
ap-4877	204	10	inversely	inversely	ADV
ap-4877	204	11	related	relate	VERB
ap-4877	204	12	to	to	ADP
ap-4877	204	13	the	the	DET
ap-4877	204	14	diameter	diameter	NOUN
ap-4877	204	15	.	.	PUNCT
ap-4877	205	1	hence	hence	ADV
ap-4877	205	2	,	,	PUNCT
ap-4877	205	3	for	for	ADP
ap-4877	205	4	a	a	DET
ap-4877	205	5	large	large	ADJ
ap-4877	205	6	diameter	diameter	NOUN
ap-4877	205	7	,	,	PUNCT
ap-4877	205	8	vth	vth	NOUN
ap-4877	205	9	decreases	decrease	NOUN
ap-4877	205	10	and	and	CCONJ
ap-4877	205	11	the	the	DET
ap-4877	205	12	power	power	NOUN
ap-4877	205	13	dissipation	dissipation	NOUN
ap-4877	205	14	will	will	AUX
ap-4877	205	15	increase	increase	VERB
ap-4877	205	16	:	:	PUNCT
ap-4877	205	17	vth	vth	VERB
ap-4877	205	18	≈	≈	PROPN
ap-4877	205	19	eg	eg	NOUN
ap-4877	205	20	2e	2e	PROPN
ap-4877	205	21	=	=	PUNCT
ap-4877	205	22	√	√	NUM
ap-4877	205	23	3	3	NUM
ap-4877	205	24	3	3	NUM
ap-4877	205	25	avπ	avπ	NOUN
ap-4877	205	26	edcnt	edcnt	NOUN
ap-4877	206	1	=	=	PUNCT
ap-4877	207	1	0.43	0.43	NUM
ap-4877	207	2	dcnt	dcnt	ADJ
ap-4877	207	3	(	(	PUNCT
ap-4877	207	4	nm	nm	NOUN
ap-4877	207	5	)	)	PUNCT
ap-4877	207	6	,	,	PUNCT
ap-4877	207	7	(	(	PUNCT
ap-4877	207	8	8)	8)	NUM
ap-4877	207	9	where	where	SCONJ
ap-4877	207	10	vπ	vπ	NOUN
ap-4877	207	11	=	=	PUNCT
ap-4877	207	12	3.033	3.033	NUM
ap-4877	207	13	ev	ev	INTJ
ap-4877	207	14	is	be	AUX
ap-4877	207	15	the	the	DET
ap-4877	207	16	carbon	carbon	NOUN
ap-4877	207	17	π	π	PROPN
ap-4877	207	18	–	–	PUNCT
ap-4877	207	19	π	π	PROPN
ap-4877	207	20	bond	bond	NOUN
ap-4877	207	21	energy	energy	NOUN
ap-4877	207	22	and	and	CCONJ
ap-4877	207	23	e	e	NOUN
ap-4877	207	24	is	be	AUX
ap-4877	207	25	the	the	DET
ap-4877	207	26	unit	unit	NOUN
ap-4877	207	27	electron	electron	NOUN
ap-4877	207	28	charge	charge	NOUN
ap-4877	207	29	.	.	PUNCT
ap-4877	208	1	figures	figure	NOUN
ap-4877	208	2	12	12	NUM
ap-4877	208	3	and	and	CCONJ
ap-4877	208	4	13	13	NUM
ap-4877	208	5	shows	show	VERB
ap-4877	208	6	the	the	DET
ap-4877	208	7	impact	impact	NOUN
ap-4877	208	8	of	of	ADP
ap-4877	208	9	the	the	DET
ap-4877	208	10	diameter	diameter	NOUN
ap-4877	208	11	on	on	ADP
ap-4877	208	12	the	the	DET
ap-4877	208	13	dynamic	dynamic	ADJ
ap-4877	208	14	and	and	CCONJ
ap-4877	208	15	standby	standby	ADJ
ap-4877	208	16	power	power	NOUN
ap-4877	208	17	respectively	respectively	ADV
ap-4877	208	18	.	.	PUNCT
ap-4877	209	1	as	as	SCONJ
ap-4877	209	2	the	the	DET
ap-4877	209	3	carbon	carbon	NOUN
ap-4877	209	4	nanotube	nanotube	NOUN
ap-4877	209	5	’s	’s	PART
ap-4877	209	6	diameter	diameter	NOUN
ap-4877	209	7	changes	change	NOUN
ap-4877	209	8	from	from	ADP
ap-4877	209	9	1	1	NUM
ap-4877	209	10	nm	nm	NOUN
ap-4877	209	11	to	to	ADP
ap-4877	209	12	2	2	NUM
ap-4877	209	13	nm	nm	NOUN
ap-4877	209	14	,	,	PUNCT
ap-4877	209	15	the	the	DET
ap-4877	209	16	dynamic	dynamic	ADJ
ap-4877	209	17	and	and	CCONJ
ap-4877	209	18	static	static	ADJ
ap-4877	209	19	power	power	NOUN
ap-4877	209	20	minimization	minimization	NOUN
ap-4877	209	21	of	of	ADP
ap-4877	209	22	power	power	NOUN
ap-4877	209	23	gated	gate	VERB
ap-4877	209	24	circuits	circuit	NOUN
ap-4877	209	25	varies	vary	VERB
ap-4877	209	26	from	from	ADP
ap-4877	209	27	6	6	NUM
ap-4877	209	28	%	%	NOUN
ap-4877	209	29	to	to	ADP
ap-4877	209	30	56	56	NUM
ap-4877	209	31	%	%	NOUN
ap-4877	209	32	and	and	CCONJ
ap-4877	209	33	8	8	NUM
ap-4877	209	34	%	%	NOUN
ap-4877	209	35	to	to	PART
ap-4877	209	36	59	59	NUM
ap-4877	209	37	%	%	NOUN
ap-4877	209	38	respectively	respectively	ADV
ap-4877	209	39	when	when	SCONJ
ap-4877	209	40	compared	compare	VERB
ap-4877	209	41	to	to	ADP
ap-4877	209	42	an	an	DET
ap-4877	209	43	ungated	ungated	ADJ
ap-4877	209	44	inverter	inverter	NOUN
ap-4877	209	45	and	and	CCONJ
ap-4877	209	46	it	it	PRON
ap-4877	209	47	is	be	AUX
ap-4877	209	48	given	give	VERB
ap-4877	209	49	in	in	ADP
ap-4877	209	50	table	table	NOUN
ap-4877	209	51	7	7	NUM
ap-4877	209	52	.	.	X
ap-4877	209	53	4.3	4.3	NUM
ap-4877	209	54	.	.	PUNCT
ap-4877	210	1	impact	impact	NOUN
ap-4877	210	2	of	of	ADP
ap-4877	210	3	pitch	pitch	NOUN
ap-4877	210	4	(	(	PUNCT
ap-4877	210	5	s	s	NOUN
ap-4877	210	6	)	)	PUNCT
ap-4877	210	7	pitch	pitch	NOUN
ap-4877	210	8	is	be	AUX
ap-4877	210	9	the	the	DET
ap-4877	210	10	distance	distance	NOUN
ap-4877	210	11	between	between	ADP
ap-4877	210	12	the	the	DET
ap-4877	210	13	centres	centre	NOUN
ap-4877	210	14	of	of	ADP
ap-4877	210	15	two	two	NUM
ap-4877	210	16	adjoining	adjoining	ADJ
ap-4877	210	17	cnts	cnt	NOUN
ap-4877	210	18	under	under	ADP
ap-4877	210	19	the	the	DET
ap-4877	210	20	same	same	ADJ
ap-4877	210	21	gate	gate	NOUN
ap-4877	210	22	of	of	ADP
ap-4877	210	23	the	the	DET
ap-4877	210	24	cntfet	cntfet	NOUN
ap-4877	210	25	.	.	PUNCT
ap-4877	211	1	with	with	ADP
ap-4877	211	2	the	the	DET
ap-4877	211	3	increase	increase	NOUN
ap-4877	211	4	in	in	ADP
ap-4877	211	5	the	the	DET
ap-4877	211	6	intertube	intertube	NOUN
ap-4877	211	7	spacing	spacing	NOUN
ap-4877	211	8	(	(	PUNCT
ap-4877	211	9	i.e.	i.e.	X
ap-4877	211	10	pitch	pitch	NOUN
ap-4877	211	11	)	)	PUNCT
ap-4877	211	12	,	,	PUNCT
ap-4877	211	13	the	the	DET
ap-4877	211	14	integration	integration	NOUN
ap-4877	211	15	density	density	NOUN
ap-4877	211	16	is	be	AUX
ap-4877	211	17	degraded	degrade	VERB
ap-4877	211	18	.	.	PUNCT
ap-4877	212	1	to	to	PART
ap-4877	212	2	enhance	enhance	VERB
ap-4877	212	3	the	the	DET
ap-4877	212	4	integration	integration	NOUN
ap-4877	212	5	density	density	NOUN
ap-4877	212	6	of	of	ADP
ap-4877	212	7	a	a	DET
ap-4877	212	8	chip	chip	NOUN
ap-4877	212	9	,	,	PUNCT
ap-4877	212	10	shorter	short	ADJ
ap-4877	212	11	pitches	pitch	NOUN
ap-4877	212	12	are	be	AUX
ap-4877	212	13	desirable	desirable	ADJ
ap-4877	212	14	.	.	PUNCT
ap-4877	213	1	equation	equation	NOUN
ap-4877	213	2	(	(	PUNCT
ap-4877	213	3	9	9	NUM
ap-4877	213	4	)	)	PUNCT
ap-4877	213	5	confirms	confirm	VERB
ap-4877	213	6	that	that	SCONJ
ap-4877	213	7	the	the	DET
ap-4877	213	8	pitch	pitch	NOUN
ap-4877	213	9	directly	directly	ADV
ap-4877	213	10	impacts	impact	VERB
ap-4877	213	11	the	the	DET
ap-4877	213	12	gate	gate	NOUN
ap-4877	213	13	width	width	NOUN
ap-4877	213	14	of	of	ADP
ap-4877	213	15	the	the	DET
ap-4877	213	16	device	device	NOUN
ap-4877	213	17	.	.	PUNCT
ap-4877	214	1	wg	wg	VERB
ap-4877	214	2	=	=	SYM
ap-4877	214	3	max{wmin	max{wmin	NOUN
ap-4877	214	4	,	,	PUNCT
ap-4877	214	5	n	n	PRON
ap-4877	214	6	∗	∗	NOUN
ap-4877	214	7	s	s	PART
ap-4877	214	8	}	}	PUNCT
ap-4877	214	9	,	,	PUNCT
ap-4877	214	10	(	(	PUNCT
ap-4877	214	11	9	9	X
ap-4877	214	12	)	)	PUNCT
ap-4877	214	13	where	where	SCONJ
ap-4877	214	14	wg	wg	PROPN
ap-4877	214	15	is	be	AUX
ap-4877	214	16	the	the	DET
ap-4877	214	17	total	total	ADJ
ap-4877	214	18	gate	gate	NOUN
ap-4877	214	19	width	width	NOUN
ap-4877	214	20	of	of	ADP
ap-4877	214	21	the	the	DET
ap-4877	214	22	cntfet	cntfet	PROPN
ap-4877	214	23	,	,	PUNCT
ap-4877	214	24	wmin	wmin	NOUN
ap-4877	214	25	is	be	AUX
ap-4877	214	26	the	the	DET
ap-4877	214	27	minimum	minimum	ADJ
ap-4877	214	28	gate	gate	NOUN
ap-4877	214	29	width	width	NOUN
ap-4877	214	30	and	and	CCONJ
ap-4877	214	31	s	s	VERB
ap-4877	214	32	is	be	AUX
ap-4877	214	33	the	the	DET
ap-4877	214	34	pitch	pitch	NOUN
ap-4877	214	35	[	[	X
ap-4877	214	36	21	21	NUM
ap-4877	214	37	,	,	PUNCT
ap-4877	214	38	22	22	NUM
ap-4877	214	39	]	]	PUNCT
ap-4877	214	40	.	.	PUNCT
ap-4877	215	1	for	for	ADP
ap-4877	215	2	higher	high	ADJ
ap-4877	215	3	pitch	pitch	NOUN
ap-4877	215	4	values	value	NOUN
ap-4877	215	5	,	,	PUNCT
ap-4877	215	6	the	the	DET
ap-4877	215	7	device	device	NOUN
ap-4877	215	8	on	on	ADP
ap-4877	215	9	-	-	PUNCT
ap-4877	215	10	current	current	ADJ
ap-4877	215	11	increases	increase	NOUN
ap-4877	215	12	as	as	SCONJ
ap-4877	215	13	the	the	DET
ap-4877	215	14	charge	charge	NOUN
ap-4877	215	15	screening	screening	NOUN
ap-4877	215	16	effects	effect	NOUN
ap-4877	215	17	are	be	AUX
ap-4877	215	18	lowered	lower	VERB
ap-4877	215	19	.	.	PUNCT
ap-4877	216	1	figure	figure	NOUN
ap-4877	216	2	14	14	NUM
ap-4877	216	3	and	and	CCONJ
ap-4877	216	4	table	table	NOUN
ap-4877	216	5	8	8	NUM
ap-4877	216	6	show	show	VERB
ap-4877	216	7	that	that	SCONJ
ap-4877	216	8	the	the	DET
ap-4877	216	9	dynamic	dynamic	ADJ
ap-4877	216	10	power	power	NOUN
ap-4877	216	11	minimization	minimization	NOUN
ap-4877	216	12	of	of	ADP
ap-4877	216	13	power	power	NOUN
ap-4877	216	14	gated	gate	VERB
ap-4877	216	15	circuits	circuit	NOUN
ap-4877	216	16	varies	vary	VERB
ap-4877	216	17	from	from	ADP
ap-4877	216	18	21	21	NUM
ap-4877	216	19	%	%	NOUN
ap-4877	216	20	to	to	ADP
ap-4877	216	21	56	56	NUM
ap-4877	216	22	%	%	NOUN
ap-4877	216	23	as	as	SCONJ
ap-4877	216	24	the	the	DET
ap-4877	216	25	pitch	pitch	NOUN
ap-4877	216	26	is	be	AUX
ap-4877	216	27	changed	change	VERB
ap-4877	216	28	from	from	ADP
ap-4877	216	29	2	2	NUM
ap-4877	216	30	nm	nm	NOUN
ap-4877	216	31	to	to	ADP
ap-4877	216	32	20	20	NUM
ap-4877	216	33	nm	nm	NOUN
ap-4877	216	34	.	.	PUNCT
ap-4877	217	1	32	32	NUM
ap-4877	217	2	vol	vol	NOUN
ap-4877	217	3	.	.	PUNCT
ap-4877	218	1	59	59	NUM
ap-4877	218	2	no	no	NOUN
ap-4877	218	3	.	.	PROPN
ap-4877	219	1	1/2019	1/2019	NUM
ap-4877	219	2	low	low	ADJ
ap-4877	219	3	leakage	leakage	NOUN
ap-4877	219	4	charge	charge	NOUN
ap-4877	219	5	recycling	recycling	NOUN
ap-4877	219	6	technique	technique	NOUN
ap-4877	219	7	figure	figure	NOUN
ap-4877	219	8	15	15	NUM
ap-4877	219	9	reveals	reveal	VERB
ap-4877	219	10	that	that	SCONJ
ap-4877	219	11	the	the	DET
ap-4877	219	12	maximum	maximum	ADJ
ap-4877	219	13	standby	standby	ADJ
ap-4877	219	14	power	power	NOUN
ap-4877	219	15	reduction	reduction	NOUN
ap-4877	219	16	of	of	ADP
ap-4877	219	17	53	53	NUM
ap-4877	219	18	%	%	NOUN
ap-4877	219	19	is	be	AUX
ap-4877	219	20	achieved	achieve	VERB
ap-4877	219	21	by	by	ADP
ap-4877	219	22	power	power	NOUN
ap-4877	219	23	gated	gate	VERB
ap-4877	219	24	circuits	circuit	NOUN
ap-4877	219	25	as	as	ADP
ap-4877	219	26	that	that	PRON
ap-4877	219	27	of	of	ADP
ap-4877	219	28	normal	normal	ADJ
ap-4877	219	29	circuits	circuit	NOUN
ap-4877	219	30	when	when	SCONJ
ap-4877	219	31	the	the	DET
ap-4877	219	32	pitch	pitch	NOUN
ap-4877	219	33	value	value	NOUN
ap-4877	219	34	changes	change	NOUN
ap-4877	219	35	from	from	ADP
ap-4877	219	36	2	2	NUM
ap-4877	219	37	nm	nm	NOUN
ap-4877	219	38	to	to	ADP
ap-4877	219	39	20	20	NUM
ap-4877	219	40	nm	nm	NOUN
ap-4877	219	41	.	.	PUNCT
ap-4877	220	1	4.4	4.4	NUM
ap-4877	220	2	.	.	PUNCT
ap-4877	220	3	impact	impact	NOUN
ap-4877	220	4	of	of	ADP
ap-4877	220	5	oxide	oxide	NOUN
ap-4877	220	6	thickness	thickness	NOUN
ap-4877	220	7	(	(	PUNCT
ap-4877	220	8	tox	tox	NOUN
ap-4877	220	9	)	)	PUNCT
ap-4877	220	10	the	the	DET
ap-4877	220	11	gate	gate	NOUN
ap-4877	220	12	-	-	PUNCT
ap-4877	220	13	to	to	ADP
ap-4877	220	14	-	-	PUNCT
ap-4877	220	15	channel	channel	NOUN
ap-4877	220	16	capacitance	capacitance	NOUN
ap-4877	220	17	decreases	decrease	NOUN
ap-4877	220	18	as	as	ADP
ap-4877	220	19	the	the	DET
ap-4877	220	20	oxide	oxide	NOUN
ap-4877	220	21	thickness	thickness	NOUN
ap-4877	220	22	increases	increase	NOUN
ap-4877	220	23	.	.	PUNCT
ap-4877	221	1	but	but	CCONJ
ap-4877	221	2	greater	great	ADJ
ap-4877	221	3	oxide	oxide	NOUN
ap-4877	221	4	thickness	thickness	NOUN
ap-4877	221	5	leads	lead	VERB
ap-4877	221	6	to	to	ADP
ap-4877	221	7	a	a	DET
ap-4877	221	8	decreased	decrease	VERB
ap-4877	221	9	driving	drive	VERB
ap-4877	221	10	current	current	NOUN
ap-4877	221	11	.	.	PUNCT
ap-4877	222	1	in	in	ADP
ap-4877	222	2	order	order	NOUN
ap-4877	222	3	to	to	PART
ap-4877	222	4	enhance	enhance	VERB
ap-4877	222	5	the	the	DET
ap-4877	222	6	device	device	NOUN
ap-4877	222	7	performance	performance	NOUN
ap-4877	222	8	,	,	PUNCT
ap-4877	222	9	the	the	DET
ap-4877	222	10	oxide	oxide	NOUN
ap-4877	222	11	thickness	thickness	NOUN
ap-4877	222	12	of	of	ADP
ap-4877	222	13	the	the	DET
ap-4877	222	14	cntfets	cntfet	NOUN
ap-4877	222	15	has	have	VERB
ap-4877	222	16	to	to	PART
ap-4877	222	17	be	be	AUX
ap-4877	222	18	chosen	choose	VERB
ap-4877	222	19	with	with	ADP
ap-4877	222	20	care	care	NOUN
ap-4877	222	21	.	.	PUNCT
ap-4877	223	1	the	the	DET
ap-4877	223	2	effect	effect	NOUN
ap-4877	223	3	of	of	ADP
ap-4877	223	4	a	a	DET
ap-4877	223	5	varying	vary	VERB
ap-4877	223	6	oxide	oxide	NOUN
ap-4877	223	7	thickness	thickness	NOUN
ap-4877	223	8	on	on	ADP
ap-4877	223	9	active	active	ADJ
ap-4877	223	10	and	and	CCONJ
ap-4877	223	11	standby	standby	ADJ
ap-4877	223	12	power	power	NOUN
ap-4877	223	13	is	be	AUX
ap-4877	223	14	shown	show	VERB
ap-4877	223	15	in	in	ADP
ap-4877	223	16	the	the	DET
ap-4877	223	17	figures	figure	NOUN
ap-4877	223	18	16	16	NUM
ap-4877	223	19	and	and	CCONJ
ap-4877	223	20	17	17	NUM
ap-4877	223	21	respectively	respectively	ADV
ap-4877	223	22	.	.	PUNCT
ap-4877	224	1	the	the	DET
ap-4877	224	2	simulation	simulation	NOUN
ap-4877	224	3	results	result	VERB
ap-4877	224	4	in	in	ADP
ap-4877	224	5	table	table	NOUN
ap-4877	224	6	9	9	NUM
ap-4877	224	7	reveals	reveal	VERB
ap-4877	224	8	that	that	SCONJ
ap-4877	224	9	when	when	SCONJ
ap-4877	224	10	the	the	DET
ap-4877	224	11	oxide	oxide	NOUN
ap-4877	224	12	thickness	thickness	NOUN
ap-4877	224	13	varies	vary	VERB
ap-4877	224	14	from	from	ADP
ap-4877	224	15	0.5	0.5	NUM
ap-4877	224	16	nm	nm	NOUN
ap-4877	224	17	to	to	ADP
ap-4877	224	18	5	5	NUM
ap-4877	224	19	nm	nm	NOUN
ap-4877	224	20	,	,	PUNCT
ap-4877	224	21	a	a	DET
ap-4877	224	22	dynamic	dynamic	ADJ
ap-4877	224	23	power	power	NOUN
ap-4877	224	24	reduction	reduction	NOUN
ap-4877	224	25	of	of	ADP
ap-4877	224	26	about	about	ADV
ap-4877	224	27	29	29	NUM
ap-4877	224	28	%	%	NOUN
ap-4877	224	29	to	to	PART
ap-4877	224	30	58	58	NUM
ap-4877	224	31	%	%	NOUN
ap-4877	224	32	and	and	CCONJ
ap-4877	224	33	maximum	maximum	ADJ
ap-4877	224	34	leakage	leakage	NOUN
ap-4877	224	35	power	power	NOUN
ap-4877	224	36	alleviation	alleviation	NOUN
ap-4877	224	37	of	of	ADP
ap-4877	224	38	52	52	NUM
ap-4877	224	39	%	%	NOUN
ap-4877	224	40	is	be	AUX
ap-4877	224	41	achieved	achieve	VERB
ap-4877	224	42	in	in	ADP
ap-4877	224	43	power	power	NOUN
ap-4877	224	44	gated	gate	VERB
ap-4877	224	45	circuits	circuit	NOUN
ap-4877	224	46	compared	compare	VERB
ap-4877	224	47	to	to	ADP
ap-4877	224	48	conventional	conventional	ADJ
ap-4877	224	49	circuits	circuit	NOUN
ap-4877	224	50	.	.	PUNCT
ap-4877	225	1	5	5	X
ap-4877	225	2	.	.	X
ap-4877	225	3	conclusions	conclusion	NOUN
ap-4877	225	4	in	in	ADP
ap-4877	225	5	this	this	DET
ap-4877	225	6	paper	paper	NOUN
ap-4877	225	7	,	,	PUNCT
ap-4877	225	8	the	the	DET
ap-4877	225	9	applicability	applicability	NOUN
ap-4877	225	10	of	of	ADP
ap-4877	225	11	a	a	DET
ap-4877	225	12	power	power	NOUN
ap-4877	225	13	gating	gate	VERB
ap-4877	225	14	structure	structure	NOUN
ap-4877	225	15	to	to	ADP
ap-4877	225	16	the	the	DET
ap-4877	225	17	cntfets	cntfet	NOUN
ap-4877	225	18	is	be	AUX
ap-4877	225	19	explored	explore	VERB
ap-4877	225	20	by	by	ADP
ap-4877	225	21	analysing	analyse	VERB
ap-4877	225	22	the	the	DET
ap-4877	225	23	performance	performance	NOUN
ap-4877	225	24	of	of	ADP
ap-4877	225	25	the	the	DET
ap-4877	225	26	cntfet	cntfet	ADJ
ap-4877	225	27	digital	digital	ADJ
ap-4877	225	28	circuits	circuit	NOUN
ap-4877	225	29	.	.	PUNCT
ap-4877	226	1	the	the	DET
ap-4877	226	2	influence	influence	NOUN
ap-4877	226	3	of	of	ADP
ap-4877	226	4	device	device	NOUN
ap-4877	226	5	design	design	NOUN
ap-4877	226	6	parameters	parameter	NOUN
ap-4877	226	7	like	like	ADP
ap-4877	226	8	the	the	DET
ap-4877	226	9	number	number	NOUN
ap-4877	226	10	of	of	ADP
ap-4877	226	11	carbon	carbon	NOUN
ap-4877	226	12	nanotubes	nanotube	NOUN
ap-4877	226	13	,	,	PUNCT
ap-4877	226	14	diameter	diameter	NOUN
ap-4877	226	15	,	,	PUNCT
ap-4877	226	16	pitch	pitch	NOUN
ap-4877	226	17	and	and	CCONJ
ap-4877	226	18	oxide	oxide	NOUN
ap-4877	226	19	thickness	thickness	NOUN
ap-4877	226	20	on	on	ADP
ap-4877	226	21	the	the	DET
ap-4877	226	22	dynamic	dynamic	ADJ
ap-4877	226	23	and	and	CCONJ
ap-4877	226	24	standby	standby	ADJ
ap-4877	226	25	power	power	NOUN
ap-4877	226	26	are	be	AUX
ap-4877	226	27	investigated	investigate	VERB
ap-4877	226	28	for	for	ADP
ap-4877	226	29	the	the	DET
ap-4877	226	30	powergated	powergated	ADJ
ap-4877	226	31	and	and	CCONJ
ap-4877	226	32	conventional	conventional	ADJ
ap-4877	226	33	circuits	circuit	NOUN
ap-4877	226	34	.	.	PUNCT
ap-4877	227	1	the	the	DET
ap-4877	227	2	hspice	hspice	NOUN
ap-4877	227	3	simulation	simulation	NOUN
ap-4877	227	4	results	result	NOUN
ap-4877	227	5	and	and	CCONJ
ap-4877	227	6	analysis	analysis	NOUN
ap-4877	227	7	has	have	AUX
ap-4877	227	8	revealed	reveal	VERB
ap-4877	227	9	that	that	SCONJ
ap-4877	227	10	the	the	DET
ap-4877	227	11	power	power	NOUN
ap-4877	227	12	gated	gate	VERB
ap-4877	227	13	circuits	circuit	NOUN
ap-4877	227	14	minimize	minimize	VERB
ap-4877	227	15	power	power	NOUN
ap-4877	227	16	to	to	ADP
ap-4877	227	17	a	a	DET
ap-4877	227	18	great	great	ADJ
ap-4877	227	19	extent	extent	NOUN
ap-4877	227	20	even	even	ADV
ap-4877	227	21	under	under	ADP
ap-4877	227	22	the	the	DET
ap-4877	227	23	device	device	NOUN
ap-4877	227	24	parameter	parameter	NOUN
ap-4877	227	25	and	and	CCONJ
ap-4877	227	26	supply	supply	NOUN
ap-4877	227	27	voltage	voltage	NOUN
ap-4877	227	28	variations	variation	NOUN
ap-4877	227	29	.	.	PUNCT
ap-4877	228	1	hence	hence	ADV
ap-4877	228	2	,	,	PUNCT
ap-4877	228	3	the	the	DET
ap-4877	228	4	llcr	llcr	PROPN
ap-4877	228	5	power	power	NOUN
ap-4877	228	6	gating	gate	VERB
ap-4877	228	7	technique	technique	NOUN
ap-4877	228	8	proposed	propose	VERB
ap-4877	228	9	for	for	ADP
ap-4877	228	10	the	the	DET
ap-4877	228	11	mosfet	mosfet	ADJ
ap-4877	228	12	device	device	NOUN
ap-4877	228	13	structures	structure	NOUN
ap-4877	228	14	can	can	AUX
ap-4877	228	15	be	be	AUX
ap-4877	228	16	extended	extend	VERB
ap-4877	228	17	to	to	PART
ap-4877	228	18	carbon	carbon	VERB
ap-4877	228	19	nanotube	nanotube	NOUN
ap-4877	228	20	structures	structure	NOUN
ap-4877	228	21	to	to	PART
ap-4877	228	22	achieve	achieve	VERB
ap-4877	228	23	a	a	DET
ap-4877	228	24	good	good	ADJ
ap-4877	228	25	power	power	NOUN
ap-4877	228	26	reduction	reduction	NOUN
ap-4877	228	27	in	in	ADP
ap-4877	228	28	dynamic	dynamic	ADJ
ap-4877	228	29	and	and	CCONJ
ap-4877	228	30	standby	standby	ADJ
ap-4877	228	31	modes	mode	NOUN
ap-4877	228	32	of	of	ADP
ap-4877	228	33	operation	operation	NOUN
ap-4877	228	34	.	.	PUNCT
ap-4877	229	1	references	reference	NOUN
ap-4877	229	2	[	[	X
ap-4877	229	3	1	1	X
ap-4877	229	4	]	]	PUNCT
ap-4877	229	5	t.	t.	PROPN
ap-4877	229	6	skotnicki	skotnicki	PROPN
ap-4877	229	7	,	,	PUNCT
ap-4877	229	8	j.	j.	PROPN
ap-4877	229	9	a.	a.	PROPN
ap-4877	229	10	hutchby	hutchby	PROPN
ap-4877	229	11	,	,	PUNCT
ap-4877	229	12	t.j	t.j	PROPN
ap-4877	229	13	.	.	PROPN
ap-4877	229	14	king	king	PROPN
ap-4877	229	15	,	,	PUNCT
ap-4877	229	16	h.s.p	h.s.p	PROPN
ap-4877	229	17	.	.	PUNCT
ap-4877	230	1	wong	wong	PROPN
ap-4877	230	2	,	,	PUNCT
ap-4877	230	3	f.	f.	PROPN
ap-4877	230	4	boeuf	boeuf	PROPN
ap-4877	230	5	.	.	PUNCT
ap-4877	231	1	the	the	DET
ap-4877	231	2	end	end	NOUN
ap-4877	231	3	of	of	ADP
ap-4877	231	4	cmos	cmos	NOUN
ap-4877	231	5	scaling	scaling	NOUN
ap-4877	231	6	:	:	PUNCT
ap-4877	231	7	toward	toward	ADP
ap-4877	231	8	the	the	DET
ap-4877	231	9	introduction	introduction	NOUN
ap-4877	231	10	of	of	ADP
ap-4877	231	11	new	new	ADJ
ap-4877	231	12	materials	material	NOUN
ap-4877	231	13	and	and	CCONJ
ap-4877	231	14	structural	structural	ADJ
ap-4877	231	15	changes	change	NOUN
ap-4877	231	16	to	to	PART
ap-4877	231	17	improve	improve	VERB
ap-4877	231	18	mosfet	mosfet	ADJ
ap-4877	231	19	performance	performance	NOUN
ap-4877	231	20	.	.	PUNCT
ap-4877	232	1	ieee	ieee	PROPN
ap-4877	232	2	circ	circ	PROPN
ap-4877	232	3	dev	dev	PROPN
ap-4877	232	4	mag	mag	CCONJ
ap-4877	232	5	21	21	NUM
ap-4877	232	6	(	(	PUNCT
ap-4877	232	7	1	1	NUM
ap-4877	232	8	):	):	PUNCT
ap-4877	232	9	16	16	NUM
ap-4877	232	10	-	-	SYM
ap-4877	232	11	26	26	NUM
ap-4877	232	12	,	,	PUNCT
ap-4877	232	13	2005	2005	NUM
ap-4877	232	14	.	.	PUNCT
ap-4877	233	1	doi:10.1109	doi:10.1109	VERB
ap-4877	233	2	/	/	SYM
ap-4877	233	3	mcd.2005.1388765	mcd.2005.1388765	PROPN
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ap-4877	234	2	2	2	NUM
ap-4877	234	3	]	]	PUNCT
ap-4877	234	4	j.	j.	PROPN
ap-4877	234	5	m.	m.	PROPN
ap-4877	234	6	rabaey	rabaey	PROPN
ap-4877	234	7	,	,	PUNCT
ap-4877	234	8	s.	s.	PROPN
ap-4877	234	9	malik	malik	PROPN
ap-4877	234	10	.	.	PUNCT
ap-4877	235	1	challenges	challenge	NOUN
ap-4877	235	2	and	and	CCONJ
ap-4877	235	3	solutions	solution	NOUN
ap-4877	235	4	for	for	ADP
ap-4877	235	5	lateand	lateand	NOUN
ap-4877	235	6	post	post	ADJ
ap-4877	235	7	-	-	ADJ
ap-4877	235	8	silicon	silicon	ADJ
ap-4877	235	9	design	design	NOUN
ap-4877	235	10	.	.	PUNCT
ap-4877	236	1	ieee	ieee	PROPN
ap-4877	236	2	dsgn	dsgn	PROPN
ap-4877	236	3	test	test	NOUN
ap-4877	236	4	comp	comp	NOUN
ap-4877	236	5	25(4	25(4	NOUN
ap-4877	236	6	):	):	PUNCT
ap-4877	236	7	296	296	NUM
ap-4877	236	8	-	-	SYM
ap-4877	236	9	302	302	NUM
ap-4877	236	10	,	,	PUNCT
ap-4877	236	11	2008	2008	NUM
ap-4877	236	12	.	.	PUNCT
ap-4877	237	1	doi:10.1109	doi:10.1109	VERB
ap-4877	237	2	/	/	PUNCT
ap-4877	238	1	mdt.2008.91	mdt.2008.91	NUM
ap-4877	239	1	[	[	X
ap-4877	239	2	3	3	X
ap-4877	239	3	]	]	X
ap-4877	239	4	y.	y.	PROPN
ap-4877	239	5	sun	sun	PROPN
ap-4877	239	6	,	,	PUNCT
ap-4877	239	7	v.	v.	ADP
ap-4877	239	8	kursun	kursun	PROPN
ap-4877	239	9	.	.	PUNCT
ap-4877	239	10	n	n	CCONJ
ap-4877	239	11	-	-	PUNCT
ap-4877	239	12	type	type	NOUN
ap-4877	239	13	carbon	carbon	NOUN
ap-4877	239	14	-	-	PUNCT
ap-4877	239	15	nanotube	nanotube	NOUN
ap-4877	239	16	mosfet	mosfet	NOUN
ap-4877	239	17	device	device	NOUN
ap-4877	239	18	profile	profile	NOUN
ap-4877	239	19	optimization	optimization	NOUN
ap-4877	239	20	for	for	ADP
ap-4877	239	21	very	very	ADV
ap-4877	239	22	large	large	ADJ
ap-4877	239	23	scale	scale	NOUN
ap-4877	239	24	integration	integration	NOUN
ap-4877	239	25	.	.	PUNCT
ap-4877	240	1	trans	trans	PROPN
ap-4877	240	2	elec	elec	PROPN
ap-4877	240	3	electron	electron	PROPN
ap-4877	240	4	mat	mat	NOUN
ap-4877	240	5	12	12	NUM
ap-4877	240	6	(	(	PUNCT
ap-4877	240	7	2	2	NUM
ap-4877	240	8	):	):	PUNCT
ap-4877	240	9	43–50	43–50	NUM
ap-4877	240	10	,	,	PUNCT
ap-4877	240	11	2011	2011	NUM
ap-4877	240	12	.	.	PUNCT
ap-4877	241	1	doi:10.4313	doi:10.4313	PROPN
ap-4877	241	2	/	/	SYM
ap-4877	242	1	teem.2011.12.2.43	teem.2011.12.2.43	NUM
ap-4877	242	2	[	[	X
ap-4877	242	3	4	4	NUM
ap-4877	242	4	]	]	PUNCT
ap-4877	242	5	shimaa	shimaa	NOUN
ap-4877	242	6	ibrahim	ibrahim	PROPN
ap-4877	242	7	sayed	sayed	PROPN
ap-4877	242	8	,	,	PUNCT
ap-4877	242	9	mostafa	mostafa	PROPN
ap-4877	242	10	mamdouh	mamdouh	PROPN
ap-4877	242	11	abutaleb	abutaleb	PROPN
ap-4877	242	12	,	,	PUNCT
ap-4877	242	13	zaki	zaki	PROPN
ap-4877	242	14	bassuoni	bassuoni	PROPN
ap-4877	242	15	nossair	nossair	PROPN
ap-4877	242	16	.	.	PUNCT
ap-4877	243	1	optimization	optimization	NOUN
ap-4877	243	2	of	of	ADP
ap-4877	243	3	cntfet	cntfet	NOUN
ap-4877	243	4	parameters	parameter	NOUN
ap-4877	243	5	for	for	ADP
ap-4877	243	6	high	high	ADJ
ap-4877	243	7	performance	performance	NOUN
ap-4877	243	8	digital	digital	ADJ
ap-4877	243	9	circuits	circuit	NOUN
ap-4877	243	10	.	.	PUNCT
ap-4877	244	1	advan	advan	NOUN
ap-4877	244	2	mat	mat	PROPN
ap-4877	244	3	sci	sci	PROPN
ap-4877	244	4	engg	engg	PROPN
ap-4877	244	5	2016	2016	NUM
ap-4877	244	6	.	.	PUNCT
ap-4877	245	1	doi:10.1155/2016/6303725	doi:10.1155/2016/6303725	PROPN
ap-4877	245	2	[	[	X
ap-4877	245	3	5	5	NUM
ap-4877	245	4	]	]	X
ap-4877	245	5	subrata	subrata	PROPN
ap-4877	245	6	biswas	biswas	PROPN
ap-4877	245	7	,	,	PUNCT
ap-4877	245	8	poly	poly	ADJ
ap-4877	245	9	kundu	kundu	NOUN
ap-4877	245	10	,	,	PUNCT
ap-4877	245	11	md	md	PROPN
ap-4877	245	12	.	.	PROPN
ap-4877	245	13	hasnat	hasnat	PROPN
ap-4877	245	14	kabir	kabir	PROPN
ap-4877	245	15	,	,	PUNCT
ap-4877	245	16	md	md	PROPN
ap-4877	245	17	.	.	PUNCT
ap-4877	246	1	moidul	moidul	PROPN
ap-4877	246	2	islam	islam	PROPN
ap-4877	246	3	,	,	PUNCT
ap-4877	246	4	sagir	sagir	PROPN
ap-4877	246	5	ahmed	ahmed	PROPN
ap-4877	246	6	,	,	PUNCT
ap-4877	246	7	nadia	nadia	PROPN
ap-4877	246	8	islam	islam	PROPN
ap-4877	246	9	aditi	aditi	PROPN
ap-4877	246	10	.	.	PUNCT
ap-4877	247	1	carbon	carbon	NOUN
ap-4877	247	2	nanotube	nanotube	ADJ
ap-4877	247	3	field	field	NOUN
ap-4877	247	4	effect	effect	NOUN
ap-4877	247	5	transistors	transistor	NOUN
ap-4877	247	6	based	base	VERB
ap-4877	247	7	low	low	ADJ
ap-4877	247	8	thd	thd	NOUN
ap-4877	247	9	and	and	CCONJ
ap-4877	247	10	noise	noise	NOUN
ap-4877	247	11	-	-	PUNCT
ap-4877	247	12	immune	immune	ADJ
ap-4877	247	13	double	double	ADJ
ap-4877	247	14	stage	stage	NOUN
ap-4877	247	15	differential	differential	NOUN
ap-4877	247	16	amplifier	amplifier	NOUN
ap-4877	247	17	for	for	ADP
ap-4877	247	18	nanoelectronics	nanoelectronic	NOUN
ap-4877	247	19	.	.	PUNCT
ap-4877	248	1	gstf	gstf	PROPN
ap-4877	248	2	j	j	PROPN
ap-4877	248	3	engg	engg	PROPN
ap-4877	248	4	tech	tech	NOUN
ap-4877	248	5	3(2	3(2	NUM
ap-4877	248	6	)	)	PUNCT
ap-4877	248	7	,	,	PUNCT
ap-4877	248	8	2015	2015	NUM
ap-4877	248	9	.	.	PUNCT
ap-4877	249	1	doi:10.5176/2251	doi:10.5176/2251	X
ap-4877	249	2	-	-	PUNCT
ap-4877	249	3	3701_3.2.120	3701_3.2.120	NUM
ap-4877	249	4	[	[	X
ap-4877	249	5	6	6	NUM
ap-4877	249	6	]	]	PUNCT
ap-4877	249	7	p.	p.	NOUN
ap-4877	249	8	a.	a.	PROPN
ap-4877	249	9	gowri	gowri	PROPN
ap-4877	249	10	sankar	sankar	PROPN
ap-4877	249	11	,	,	PUNCT
ap-4877	249	12	k.	k.	PROPN
ap-4877	249	13	udhayakumar	udhayakumar	PROPN
ap-4877	249	14	.	.	PUNCT
ap-4877	250	1	mosfet	mosfet	NOUN
ap-4877	250	2	-	-	PUNCT
ap-4877	250	3	like	like	ADJ
ap-4877	250	4	cntfet	cntfet	NOUN
ap-4877	250	5	based	base	VERB
ap-4877	250	6	logic	logic	PROPN
ap-4877	250	7	gate	gate	NOUN
ap-4877	250	8	library	library	NOUN
ap-4877	250	9	for	for	ADP
ap-4877	250	10	low	low	ADJ
ap-4877	250	11	-	-	PUNCT
ap-4877	250	12	power	power	NOUN
ap-4877	250	13	application	application	NOUN
ap-4877	250	14	:	:	PUNCT
ap-4877	250	15	a	a	DET
ap-4877	250	16	comparative	comparative	ADJ
ap-4877	250	17	study	study	NOUN
ap-4877	250	18	.	.	PUNCT
ap-4877	251	1	j	j	PROPN
ap-4877	251	2	semi	semi	ADJ
ap-4877	251	3	35(7	35(7	NUM
ap-4877	251	4	)	)	PUNCT
ap-4877	251	5	,	,	PUNCT
ap-4877	251	6	2014	2014	NUM
ap-4877	251	7	.	.	PUNCT
ap-4877	252	1	doi:10.1088/1674	doi:10.1088/1674	NOUN
ap-4877	252	2	-	-	PUNCT
ap-4877	252	3	4926/35/7/075001	4926/35/7/075001	NUM
ap-4877	253	1	[	[	X
ap-4877	253	2	7	7	X
ap-4877	253	3	]	]	X
ap-4877	253	4	t.	t.	PROPN
ap-4877	253	5	skotnicki	skotnicki	PROPN
ap-4877	253	6	,	,	PUNCT
ap-4877	253	7	j.	j.	PROPN
ap-4877	253	8	a.	a.	PROPN
ap-4877	253	9	hutchby	hutchby	PROPN
ap-4877	253	10	,	,	PUNCT
ap-4877	253	11	t.-j	t.-j	PROPN
ap-4877	253	12	.	.	PUNCT
ap-4877	254	1	king	king	PROPN
ap-4877	254	2	,	,	PUNCT
ap-4877	254	3	h.s.p	h.s.p	PROPN
ap-4877	254	4	.	.	PUNCT
ap-4877	255	1	wong	wong	PROPN
ap-4877	255	2	,	,	PUNCT
ap-4877	255	3	f.	f.	PROPN
ap-4877	255	4	boeuf	boeuf	PROPN
ap-4877	255	5	.	.	PUNCT
ap-4877	256	1	the	the	DET
ap-4877	256	2	end	end	NOUN
ap-4877	256	3	of	of	ADP
ap-4877	256	4	cmos	cmos	NOUN
ap-4877	256	5	scaling	scaling	NOUN
ap-4877	256	6	:	:	PUNCT
ap-4877	256	7	toward	toward	ADP
ap-4877	256	8	the	the	DET
ap-4877	256	9	introduction	introduction	NOUN
ap-4877	256	10	of	of	ADP
ap-4877	256	11	new	new	ADJ
ap-4877	256	12	materials	material	NOUN
ap-4877	256	13	and	and	CCONJ
ap-4877	256	14	structural	structural	ADJ
ap-4877	256	15	changes	change	NOUN
ap-4877	256	16	to	to	PART
ap-4877	256	17	improve	improve	VERB
ap-4877	256	18	mosfet	mosfet	ADJ
ap-4877	256	19	performance	performance	NOUN
ap-4877	256	20	.	.	PUNCT
ap-4877	257	1	ieee	ieee	PROPN
ap-4877	257	2	circ	circ	PROPN
ap-4877	257	3	dev	dev	PROPN
ap-4877	257	4	mag	mag	PROPN
ap-4877	257	5	21(1):16	21(1):16	NUM
ap-4877	257	6	-	-	SYM
ap-4877	257	7	26	26	NUM
ap-4877	257	8	,	,	PUNCT
ap-4877	257	9	2005	2005	NUM
ap-4877	257	10	.	.	PUNCT
ap-4877	258	1	doi:10.1109	doi:10.1109	VERB
ap-4877	258	2	/	/	SYM
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ap-4877	259	1	[	[	X
ap-4877	259	2	8	8	NUM
ap-4877	259	3	]	]	X
ap-4877	259	4	j.deng	j.deng	NOUN
ap-4877	259	5	,	,	PUNCT
ap-4877	259	6	h.s	h.s	PROPN
ap-4877	259	7	.	.	PROPN
ap-4877	259	8	p.wong	p.wong	NOUN
ap-4877	259	9	.	.	PUNCT
ap-4877	260	1	a	a	DET
ap-4877	260	2	compact	compact	ADJ
ap-4877	260	3	spice	spice	NOUN
ap-4877	260	4	model	model	NOUN
ap-4877	260	5	for	for	ADP
ap-4877	260	6	carbon	carbon	NOUN
ap-4877	260	7	nanotube	nanotube	ADJ
ap-4877	260	8	field	field	NOUN
ap-4877	260	9	-	-	PUNCT
ap-4877	260	10	effect	effect	NOUN
ap-4877	260	11	transistors	transistor	NOUN
ap-4877	260	12	including	include	VERB
ap-4877	260	13	nonidealities	nonidealitie	NOUN
ap-4877	260	14	and	and	CCONJ
ap-4877	260	15	its	its	PRON
ap-4877	260	16	application	application	NOUN
ap-4877	260	17	—	—	PUNCT
ap-4877	260	18	part	part	NOUN
ap-4877	260	19	i	i	PRON
ap-4877	260	20	:	:	PUNCT
ap-4877	260	21	model	model	NOUN
ap-4877	260	22	of	of	ADP
ap-4877	260	23	the	the	DET
ap-4877	260	24	intrinsic	intrinsic	ADJ
ap-4877	260	25	channel	channel	NOUN
ap-4877	260	26	region	region	NOUN
ap-4877	260	27	.	.	PUNCT
ap-4877	261	1	ieee	ieee	PROPN
ap-4877	261	2	tran	tran	PROPN
ap-4877	261	3	electron	electron	PROPN
ap-4877	261	4	dev	dev	PROPN
ap-4877	261	5	54(12):3186	54(12):3186	PROPN
ap-4877	261	6	-	-	SYM
ap-4877	261	7	3194	3194	NUM
ap-4877	261	8	,	,	PUNCT
ap-4877	261	9	2007	2007	NUM
ap-4877	261	10	.	.	PUNCT
ap-4877	262	1	doi:10.1109	doi:10.1109	VERB
ap-4877	262	2	/	/	SYM
ap-4877	263	1	ted.2007.909030	ted.2007.909030	PRON
ap-4877	264	1	[	[	X
ap-4877	264	2	9	9	NUM
ap-4877	264	3	]	]	X
ap-4877	264	4	j.	j.	PROPN
ap-4877	264	5	luo	luo	PROPN
ap-4877	264	6	,	,	PUNCT
ap-4877	264	7	l.	l.	PROPN
ap-4877	264	8	wei	wei	PROPN
ap-4877	264	9	,	,	PUNCT
ap-4877	264	10	c.s	c.s	PROPN
ap-4877	264	11	.	.	PROPN
ap-4877	264	12	lee	lee	PROPN
ap-4877	264	13	,	,	PUNCT
ap-4877	264	14	aaron	aaron	PROPN
ap-4877	264	15	d.	d.	PROPN
ap-4877	264	16	franklin	franklin	PROPN
ap-4877	264	17	,	,	PUNCT
ap-4877	264	18	ximeng	ximeng	PROPN
ap-4877	264	19	guan	guan	PROPN
ap-4877	264	20	,	,	PUNCT
ap-4877	264	21	eric	eric	PROPN
ap-4877	264	22	pop	pop	PROPN
ap-4877	264	23	,	,	PUNCT
ap-4877	264	24	dimitri	dimitri	PROPN
ap-4877	264	25	a.	a.	NOUN
ap-4877	264	26	antoniadis	antoniadis	PROPN
ap-4877	264	27	,	,	PUNCT
ap-4877	264	28	h.s	h.s	PROPN
ap-4877	264	29	.	.	PROPN
ap-4877	264	30	philip	philip	PROPN
ap-4877	264	31	wong	wong	PROPN
ap-4877	264	32	.	.	PUNCT
ap-4877	265	1	compact	compact	ADJ
ap-4877	265	2	model	model	NOUN
ap-4877	265	3	for	for	ADP
ap-4877	265	4	carbon	carbon	NOUN
ap-4877	265	5	nanotube	nanotube	ADJ
ap-4877	265	6	field	field	NOUN
ap-4877	265	7	-	-	PUNCT
ap-4877	265	8	effect	effect	NOUN
ap-4877	265	9	transistors	transistor	NOUN
ap-4877	265	10	including	include	VERB
ap-4877	265	11	nonidealities	nonidealitie	NOUN
ap-4877	265	12	and	and	CCONJ
ap-4877	265	13	calibrated	calibrate	VERB
ap-4877	265	14	with	with	ADP
ap-4877	265	15	experimental	experimental	ADJ
ap-4877	265	16	data	datum	NOUN
ap-4877	265	17	down	down	ADV
ap-4877	265	18	to	to	ADP
ap-4877	265	19	9	9	NUM
ap-4877	265	20	-	-	PUNCT
ap-4877	265	21	nm	nm	NOUN
ap-4877	265	22	gate	gate	NOUN
ap-4877	265	23	length	length	NOUN
ap-4877	265	24	.	.	PUNCT
ap-4877	266	1	ieee	ieee	PROPN
ap-4877	266	2	trans	trans	PROPN
ap-4877	266	3	electron	electron	PROPN
ap-4877	266	4	dev	dev	PROPN
ap-4877	266	5	60(6):1834	60(6):1834	PROPN
ap-4877	266	6	-	-	SYM
ap-4877	266	7	1843	1843	NUM
ap-4877	266	8	,	,	PUNCT
ap-4877	266	9	2013	2013	NUM
ap-4877	266	10	.	.	PUNCT
ap-4877	267	1	doi:10.1109	doi:10.1109	VERB
ap-4877	267	2	/	/	SYM
ap-4877	267	3	ted.2013.2258023	ted.2013.2258023	PRON
ap-4877	268	1	[	[	X
ap-4877	268	2	10	10	NUM
ap-4877	268	3	]	]	PUNCT
ap-4877	268	4	k.	k.	PROPN
ap-4877	268	5	agarwal	agarwal	PROPN
ap-4877	268	6	,	,	PUNCT
ap-4877	268	7	t.x.austin	t.x.austin	PROPN
ap-4877	268	8	,	,	PUNCT
ap-4877	268	9	h.	h.	PROPN
ap-4877	268	10	deogun	deogun	PROPN
ap-4877	268	11	,	,	PUNCT
ap-4877	268	12	d.	d.	PROPN
ap-4877	268	13	sylvester	sylvester	PROPN
ap-4877	268	14	,	,	PUNCT
ap-4877	268	15	k.	k.	PROPN
ap-4877	268	16	nowka	nowka	PROPN
ap-4877	268	17	.	.	PUNCT
ap-4877	269	1	power	power	NOUN
ap-4877	269	2	gating	gate	VERB
ap-4877	269	3	with	with	ADP
ap-4877	269	4	multiple	multiple	ADJ
ap-4877	269	5	sleep	sleep	NOUN
ap-4877	269	6	modes	mode	NOUN
ap-4877	269	7	.	.	PUNCT
ap-4877	270	1	proc	proc	NOUN
ap-4877	270	2	.	.	PUNCT
ap-4877	271	1	7th	7th	ADJ
ap-4877	271	2	int	int	NOUN
ap-4877	271	3	.	.	PUNCT
ap-4877	272	1	symp	symp	PROPN
ap-4877	272	2	.	.	PUNCT
ap-4877	272	3	qlty	qlty	PROPN
ap-4877	272	4	elect	elect	PROPN
ap-4877	272	5	.	.	PUNCT
ap-4877	273	1	dsgn	dsgn	PROPN
ap-4877	273	2	632	632	NUM
ap-4877	273	3	-	-	PUNCT
ap-4877	273	4	637	637	NUM
ap-4877	273	5	,	,	PUNCT
ap-4877	273	6	2006	2006	NUM
ap-4877	273	7	.	.	PUNCT
ap-4877	274	1	[	[	X
ap-4877	274	2	11	11	NUM
ap-4877	274	3	]	]	X
ap-4877	274	4	n.	n.	PROPN
ap-4877	274	5	khoshavi	khoshavi	PROPN
ap-4877	274	6	,	,	PUNCT
ap-4877	274	7	r.a.ashraf	r.a.ashraf	NOUN
ap-4877	274	8	,	,	PUNCT
ap-4877	274	9	r.f	r.f	PROPN
ap-4877	274	10	.	.	PROPN
ap-4877	274	11	demara	demara	PROPN
ap-4877	274	12	.	.	PUNCT
ap-4877	275	1	applicability	applicability	NOUN
ap-4877	275	2	of	of	ADP
ap-4877	275	3	power	power	NOUN
ap-4877	275	4	-	-	PUNCT
ap-4877	275	5	gating	gate	VERB
ap-4877	275	6	strategies	strategy	NOUN
ap-4877	275	7	for	for	ADP
ap-4877	275	8	aging	age	VERB
ap-4877	275	9	mitigation	mitigation	NOUN
ap-4877	275	10	of	of	ADP
ap-4877	275	11	cmos	cmos	ADJ
ap-4877	275	12	logic	logic	NOUN
ap-4877	275	13	path	path	NOUN
ap-4877	275	14	.	.	PUNCT
ap-4877	276	1	proc	proc	NOUN
ap-4877	276	2	.	.	PUNCT
ap-4877	277	1	int	int	NOUN
ap-4877	277	2	.	.	PUNCT
ap-4877	278	1	midwest	midwest	PROPN
ap-4877	278	2	symp	symp	PROPN
ap-4877	278	3	.	.	PUNCT
ap-4877	279	1	ckts	ckts	NOUN
ap-4877	279	2	syst	syst	PROPN
ap-4877	279	3	929	929	NUM
ap-4877	279	4	-	-	SYM
ap-4877	279	5	932	932	NUM
ap-4877	279	6	,	,	PUNCT
ap-4877	279	7	2014	2014	NUM
ap-4877	279	8	.	.	PUNCT
ap-4877	280	1	[	[	X
ap-4877	280	2	12	12	NUM
ap-4877	280	3	]	]	PUNCT
ap-4877	280	4	s.mutoh	s.mutoh	NOUN
ap-4877	280	5	,	,	PUNCT
ap-4877	280	6	t.	t.	PROPN
ap-4877	280	7	douseki	douseki	PROPN
ap-4877	280	8	,	,	PUNCT
ap-4877	280	9	y.matsuya	y.matsuya	PROPN
ap-4877	280	10	,	,	PUNCT
ap-4877	280	11	t.aoki	t.aoki	ADJ
ap-4877	280	12	,	,	PUNCT
ap-4877	280	13	s.shigemitsu	s.shigemitsu	NOUN
ap-4877	280	14	.	.	PUNCT
ap-4877	281	1	j.	j.	PROPN
ap-4877	281	2	yamada	yamada	PROPN
ap-4877	281	3	.	.	PROPN
ap-4877	282	1	1	1	NUM
ap-4877	282	2	-	-	PUNCT
ap-4877	282	3	v	v	NOUN
ap-4877	282	4	power	power	NOUN
ap-4877	282	5	supply	supply	NOUN
ap-4877	282	6	high	high	ADJ
ap-4877	282	7	-	-	PUNCT
ap-4877	282	8	speed	speed	NOUN
ap-4877	282	9	digital	digital	ADJ
ap-4877	282	10	circuit	circuit	NOUN
ap-4877	282	11	technology	technology	NOUN
ap-4877	282	12	with	with	ADP
ap-4877	282	13	multi	multi	ADJ
ap-4877	282	14	threshold	threshold	NOUN
ap-4877	282	15	-	-	PUNCT
ap-4877	282	16	voltage	voltage	NOUN
ap-4877	282	17	cmos	cmos	NOUN
ap-4877	282	18	.	.	PUNCT
ap-4877	283	1	ieee	ieee	PROPN
ap-4877	283	2	j.	j.	PROPN
ap-4877	283	3	solid	solid	PROPN
ap-4877	283	4	-	-	PUNCT
ap-4877	283	5	state	state	NOUN
ap-4877	283	6	ckt	ckt	PROPN
ap-4877	283	7	,	,	PUNCT
ap-4877	283	8	30(8):847	30(8):847	PROPN
ap-4877	283	9	-	-	SYM
ap-4877	283	10	854	854	NUM
ap-4877	283	11	,	,	PUNCT
ap-4877	283	12	1995	1995	NUM
ap-4877	283	13	.	.	PUNCT
ap-4877	284	1	[	[	X
ap-4877	284	2	13	13	NUM
ap-4877	284	3	]	]	SYM
ap-4877	284	4	s	s	PART
ap-4877	284	5	.	.	PUNCT
ap-4877	285	1	kim	kim	PROPN
ap-4877	285	2	,	,	PUNCT
ap-4877	285	3	s.v	s.v	PROPN
ap-4877	285	4	.	.	PROPN
ap-4877	285	5	kosonocky	kosonocky	PROPN
ap-4877	285	6	,	,	PUNCT
ap-4877	285	7	d.r	d.r	PROPN
ap-4877	285	8	.	.	PROPN
ap-4877	285	9	knebel	knebel	PROPN
ap-4877	285	10	,	,	PUNCT
ap-4877	285	11	k.	k.	PROPN
ap-4877	285	12	stawiasz	stawiasz	PROPN
ap-4877	285	13	,	,	PUNCT
ap-4877	285	14	m.c.papaefthymiou	m.c.papaefthymiou	NOUN
ap-4877	285	15	.	.	PUNCT
ap-4877	286	1	a	a	DET
ap-4877	286	2	multi	multi	ADJ
ap-4877	286	3	-	-	ADJ
ap-4877	286	4	mode	mode	ADJ
ap-4877	286	5	power	power	NOUN
ap-4877	286	6	gating	gate	VERB
ap-4877	286	7	structure	structure	NOUN
ap-4877	286	8	for	for	ADP
ap-4877	286	9	low	low	ADJ
ap-4877	286	10	-	-	PUNCT
ap-4877	286	11	voltage	voltage	NOUN
ap-4877	286	12	deep	deep	ADJ
ap-4877	286	13	-	-	PUNCT
ap-4877	286	14	submicron	submicron	NOUN
ap-4877	286	15	cmos	cmos	PROPN
ap-4877	286	16	ics	ics	PROPN
ap-4877	286	17	.	.	PUNCT
ap-4877	287	1	ieee	ieee	PROPN
ap-4877	287	2	t	t	PROPN
ap-4877	287	3	ckts	ckts	NOUN
ap-4877	287	4	-	-	PUNCT
ap-4877	287	5	ii	ii	ADJ
ap-4877	287	6	54:586	54:586	NUM
ap-4877	287	7	-	-	SYM
ap-4877	287	8	590	590	NUM
ap-4877	287	9	,	,	PUNCT
ap-4877	287	10	2007	2007	NUM
ap-4877	287	11	.	.	PUNCT
ap-4877	288	1	[	[	X
ap-4877	288	2	14	14	NUM
ap-4877	288	3	]	]	PUNCT
ap-4877	288	4	p.khaled	p.khaled	ADJ
ap-4877	288	5	,	,	PUNCT
ap-4877	288	6	jingyexu	jingyexu	NOUN
ap-4877	288	7	,	,	PUNCT
ap-4877	288	8	m.h	m.h	PROPN
ap-4877	288	9	.	.	PROPN
ap-4877	288	10	choudhury	choudhury	PROPN
ap-4877	288	11	.	.	PUNCT
ap-4877	289	1	dual	dual	ADJ
ap-4877	289	2	diode	diode	NOUN
ap-4877	289	3	-	-	PUNCT
ap-4877	289	4	vth	vth	NOUN
ap-4877	289	5	reduced	reduce	VERB
ap-4877	289	6	power	power	NOUN
ap-4877	289	7	gating	gate	VERB
ap-4877	289	8	structure	structure	NOUN
ap-4877	289	9	for	for	ADP
ap-4877	289	10	better	well	ADJ
ap-4877	289	11	leakage	leakage	NOUN
ap-4877	289	12	reduction	reduction	NOUN
ap-4877	289	13	.	.	PUNCT
ap-4877	290	1	proc	proc	NOUN
ap-4877	290	2	.	.	PUNCT
ap-4877	291	1	50th	50th	ADJ
ap-4877	291	2	midwest	midwest	PROPN
ap-4877	291	3	symp	symp	PROPN
ap-4877	291	4	.	.	PUNCT
ap-4877	292	1	ckts	ckts	NOUN
ap-4877	292	2	.	.	PUNCT
ap-4877	293	1	syst	syst	NOUN
ap-4877	293	2	.	.	PUNCT
ap-4877	293	3	1409	1409	NUM
ap-4877	293	4	-	-	SYM
ap-4877	293	5	1412	1412	NUM
ap-4877	293	6	,	,	PUNCT
ap-4877	293	7	2007	2007	NUM
ap-4877	293	8	[	[	X
ap-4877	293	9	15	15	NUM
ap-4877	293	10	]	]	PUNCT
ap-4877	293	11	m.	m.	NOUN
ap-4877	293	12	h.chowdhury	h.chowdhury	PROPN
ap-4877	293	13	,	,	PUNCT
ap-4877	293	14	j.	j.	PROPN
ap-4877	293	15	gjanci	gjanci	PROPN
ap-4877	293	16	,	,	PUNCT
ap-4877	293	17	p.	p.	PROPN
ap-4877	293	18	khaled	khaled	PROPN
ap-4877	293	19	.	.	PUNCT
ap-4877	294	1	controlling	control	VERB
ap-4877	294	2	ground	ground	NOUN
ap-4877	294	3	bounce	bounce	NOUN
ap-4877	294	4	noise	noise	NOUN
ap-4877	294	5	in	in	ADP
ap-4877	294	6	power	power	NOUN
ap-4877	294	7	gating	gate	VERB
ap-4877	294	8	scheme	scheme	NOUN
ap-4877	294	9	for	for	ADP
ap-4877	294	10	system	system	NOUN
ap-4877	294	11	-	-	PUNCT
ap-4877	294	12	on	on	ADP
ap-4877	294	13	-	-	PUNCT
ap-4877	294	14	a	a	DET
ap-4877	294	15	-	-	PUNCT
ap-4877	294	16	chip	chip	NOUN
ap-4877	294	17	.	.	PUNCT
ap-4877	295	1	proc	proc	PROPN
ap-4877	295	2	.	.	PUNCT
ap-4877	296	1	ieee	ieee	NOUN
ap-4877	296	2	comput	comput	PROPN
ap-4877	296	3	.	.	PUNCT
ap-4877	297	1	soc	soc	PROPN
ap-4877	297	2	.	.	PUNCT
ap-4877	298	1	annu	annu	PROPN
ap-4877	298	2	.	.	PUNCT
ap-4877	299	1	symp	symp	PROPN
ap-4877	299	2	.	.	PUNCT
ap-4877	300	1	vlsi	vlsi	PROPN
ap-4877	300	2	437–440	437–440	PROPN
ap-4877	300	3	,	,	PUNCT
ap-4877	300	4	2008	2008	NUM
ap-4877	300	5	.	.	PUNCT
ap-4877	301	1	[	[	X
ap-4877	301	2	16	16	NUM
ap-4877	301	3	]	]	PUNCT
ap-4877	301	4	k.	k.	PROPN
ap-4877	301	5	kumagai	kumagai	PROPN
ap-4877	301	6	,	,	PUNCT
ap-4877	301	7	h.	h.	PROPN
ap-4877	301	8	iwaki	iwaki	PROPN
ap-4877	301	9	,	,	PUNCT
ap-4877	301	10	h.	h.	PROPN
ap-4877	301	11	yoshida	yoshida	PROPN
ap-4877	301	12	,	,	PUNCT
ap-4877	301	13	h.	h.	PROPN
ap-4877	301	14	suzuki	suzuki	PROPN
ap-4877	301	15	,	,	PUNCT
ap-4877	301	16	t.yamada	t.yamada	PROPN
ap-4877	301	17	,	,	PUNCT
ap-4877	301	18	s.	s.	PROPN
ap-4877	301	19	kurosawa	kurosawa	PROPN
ap-4877	301	20	.	.	PUNCT
ap-4877	302	1	a	a	DET
ap-4877	302	2	novel	novel	ADJ
ap-4877	302	3	powering	powering	NOUN
ap-4877	302	4	-	-	PUNCT
ap-4877	302	5	down	down	ADP
ap-4877	302	6	scheme	scheme	NOUN
ap-4877	302	7	for	for	ADP
ap-4877	302	8	low	low	ADJ
ap-4877	302	9	vt	vt	PROPN
ap-4877	302	10	cmos	cmos	PROPN
ap-4877	302	11	circuits	circuit	NOUN
ap-4877	302	12	.	.	PUNCT
ap-4877	303	1	proc	proc	NOUN
ap-4877	303	2	.	.	PUNCT
ap-4877	304	1	symp	symp	PROPN
ap-4877	304	2	.	.	PUNCT
ap-4877	305	1	vlsi	vlsi	PROPN
ap-4877	305	2	ckts	ckts	NOUN
ap-4877	305	3	.	.	PUNCT
ap-4877	306	1	44	44	NUM
ap-4877	306	2	-	-	SYM
ap-4877	306	3	45	45	NUM
ap-4877	306	4	,	,	PUNCT
ap-4877	306	5	1998	1998	NUM
ap-4877	306	6	.	.	PUNCT
ap-4877	307	1	[	[	X
ap-4877	307	2	17	17	NUM
ap-4877	307	3	]	]	X
ap-4877	307	4	tada	tada	PROPN
ap-4877	307	5	,	,	PUNCT
ap-4877	307	6	h.notani	h.notani	NOUN
ap-4877	307	7	,	,	PUNCT
ap-4877	307	8	m.numa	m.numa	NOUN
ap-4877	307	9	.	.	PUNCT
ap-4877	308	1	a	a	DET
ap-4877	308	2	novel	novel	ADJ
ap-4877	308	3	power	power	NOUN
ap-4877	308	4	gating	gate	VERB
ap-4877	308	5	scheme	scheme	NOUN
ap-4877	308	6	with	with	ADP
ap-4877	308	7	charge	charge	NOUN
ap-4877	308	8	recycling	recycling	NOUN
ap-4877	308	9	.	.	PUNCT
ap-4877	309	1	ieice	ieice	NOUN
ap-4877	309	2	elect	elect	PROPN
ap-4877	309	3	.	.	PUNCT
ap-4877	310	1	exp	exp	NOUN
ap-4877	310	2	.	.	PUNCT
ap-4877	311	1	3(12):281	3(12):281	NOUN
ap-4877	311	2	-	-	NUM
ap-4877	311	3	286,2006	286,2006	NUM
ap-4877	311	4	.	.	PUNCT
ap-4877	312	1	[	[	X
ap-4877	312	2	18	18	NUM
ap-4877	312	3	]	]	X
ap-4877	312	4	e	e	X
ap-4877	312	5	.	.	PUNCT
ap-4877	313	1	pakbaznia	pakbaznia	PROPN
ap-4877	313	2	,	,	PUNCT
ap-4877	313	3	f.	f.	PROPN
ap-4877	313	4	fallah	fallah	PROPN
ap-4877	313	5	,	,	PUNCT
ap-4877	313	6	m.pedram	m.pedram	NOUN
ap-4877	313	7	.	.	PUNCT
ap-4877	314	1	charge	charge	NOUN
ap-4877	314	2	recycling	recycling	NOUN
ap-4877	314	3	in	in	ADP
ap-4877	314	4	mtcmos	mtcmos	ADJ
ap-4877	314	5	circuits	circuit	NOUN
ap-4877	314	6	:	:	PUNCT
ap-4877	314	7	concept	concept	NOUN
ap-4877	314	8	and	and	CCONJ
ap-4877	314	9	analysis	analysis	NOUN
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ap-4877	315	1	proc	proc	NOUN
ap-4877	315	2	.	.	PUNCT
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ap-4877	315	5	acm	acm	PROPN
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ap-4877	315	7	.	.	PUNCT
ap-4877	316	1	dsgn	dsgn	PROPN
ap-4877	316	2	.	.	PUNCT
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ap-4877	317	2	.	.	PUNCT
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ap-4877	318	2	-	-	SYM
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ap-4877	318	4	,	,	PUNCT
ap-4877	318	5	2006	2006	NUM
ap-4877	318	6	.	.	PUNCT
ap-4877	319	1	[	[	X
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ap-4877	319	3	]	]	X
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ap-4877	320	4	pedram	pedram	PROPN
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ap-4877	321	4	tri	tri	ADJ
ap-4877	321	5	-	-	ADJ
ap-4877	321	6	modal	modal	ADJ
ap-4877	321	7	multi	multi	ADJ
ap-4877	321	8	-	-	ADJ
ap-4877	321	9	threshold	threshold	ADJ
ap-4877	321	10	cmos	cmos	NOUN
ap-4877	321	11	switch	switch	NOUN
ap-4877	321	12	with	with	ADP
ap-4877	321	13	application	application	NOUN
ap-4877	321	14	to	to	ADP
ap-4877	321	15	data	datum	NOUN
ap-4877	321	16	retentive	retentive	ADJ
ap-4877	321	17	power	power	NOUN
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ap-4877	321	19	.	.	PUNCT
ap-4877	322	1	ieee	ieee	PROPN
ap-4877	322	2	tran	tran	PROPN
ap-4877	322	3	.	.	PUNCT
ap-4877	323	1	vlsi	vlsi	PROPN
ap-4877	323	2	syst	syst	PROPN
ap-4877	323	3	.	.	PUNCT
ap-4877	324	1	20(2):380	20(2):380	NUM
ap-4877	324	2	-	-	PUNCT
ap-4877	324	3	385	385	NUM
ap-4877	324	4	,	,	PUNCT
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ap-4877	324	6	.	.	PUNCT
ap-4877	325	1	[	[	X
ap-4877	325	2	20	20	NUM
ap-4877	325	3	]	]	X
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ap-4877	325	5	liu	liu	PROPN
ap-4877	325	6	,	,	PUNCT
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ap-4877	325	8	kursun	kursun	PROPN
ap-4877	325	9	.	.	PUNCT
ap-4877	326	1	low	low	PROPN
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ap-4877	326	4	with	with	ADP
ap-4877	326	5	sleep	sleep	NOUN
ap-4877	326	6	transistor	transistor	NOUN
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ap-4877	326	8	recycling	recycling	NOUN
ap-4877	326	9	.	.	PUNCT
ap-4877	327	1	proc	proc	NOUN
ap-4877	327	2	.	.	PUNCT
ap-4877	328	1	50th	50th	ADJ
ap-4877	328	2	midwest	midwest	PROPN
ap-4877	328	3	symp	symp	PROPN
ap-4877	328	4	.	.	PUNCT
ap-4877	329	1	ckts	ckts	NOUN
ap-4877	329	2	.	.	PUNCT
ap-4877	330	1	syst	syst	PROPN
ap-4877	330	2	.	.	PUNCT
ap-4877	330	3	891	891	NUM
ap-4877	330	4	-	-	SYM
ap-4877	330	5	894	894	NUM
ap-4877	330	6	,	,	PUNCT
ap-4877	330	7	2007	2007	NUM
ap-4877	330	8	.	.	PUNCT
ap-4877	331	1	33	33	NUM
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ap-4877	331	4	http://dx.doi.org/10.4313/teem.2011.12.2.43	http://dx.doi.org/10.4313/teem.2011.12.2.43	DET
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ap-4877	331	6	http://dx.doi.org/10.5176/2251-3701_3.2.120	http://dx.doi.org/10.5176/2251-3701_3.2.120	PROPN
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ap-4877	331	15	m.	m.	PROPN
ap-4877	331	16	kalpana	kalpana	PROPN
ap-4877	331	17	acta	acta	PROPN
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ap-4877	332	2	21	21	NUM
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ap-4877	334	8	field	field	NOUN
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ap-4877	334	16	-	-	PUNCT
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ap-4877	334	18	ii	ii	NOUN
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ap-4877	334	22	model	model	NOUN
ap-4877	334	23	and	and	CCONJ
ap-4877	334	24	circuit	circuit	NOUN
ap-4877	334	25	performance	performance	NOUN
ap-4877	334	26	benchmarking	benchmarke	VERB
ap-4877	334	27	.	.	PUNCT
ap-4877	335	1	ieee	ieee	PROPN
ap-4877	335	2	trans	trans	PROPN
ap-4877	335	3	.	.	PROPN
ap-4877	335	4	electron	electron	PROPN
ap-4877	335	5	dev	dev	PROPN
ap-4877	335	6	54(12):3195	54(12):3195	PROPN
ap-4877	335	7	-	-	SYM
ap-4877	335	8	3205	3205	NUM
ap-4877	335	9	,	,	PUNCT
ap-4877	335	10	2007	2007	NUM
ap-4877	335	11	.	.	PUNCT
ap-4877	336	1	doi:10.1109	doi:10.1109	VERB
ap-4877	336	2	/	/	SYM
ap-4877	336	3	ted.2007.909043	ted.2007.909043	PROPN
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ap-4877	337	2	22	22	NUM
ap-4877	337	3	]	]	PUNCT
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ap-4877	337	6	.	.	PUNCT
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ap-4877	337	8	modeling	modeling	NOUN
ap-4877	337	9	and	and	CCONJ
ap-4877	337	10	circuit	circuit	NOUN
ap-4877	337	11	performance	performance	NOUN
ap-4877	337	12	evaluation	evaluation	NOUN
ap-4877	337	13	for	for	ADP
ap-4877	337	14	nanoscale	nanoscale	NOUN
ap-4877	337	15	devices	device	NOUN
ap-4877	337	16	:	:	PUNCT
ap-4877	337	17	silicon	silicon	NOUN
ap-4877	337	18	technology	technology	NOUN
ap-4877	337	19	beyond	beyond	ADP
ap-4877	337	20	45	45	NUM
ap-4877	337	21	nm	nm	ADJ
ap-4877	337	22	node	node	NOUN
ap-4877	337	23	and	and	CCONJ
ap-4877	337	24	carbon	carbon	NOUN
ap-4877	337	25	nanotube	nanotube	ADJ
ap-4877	337	26	field	field	NOUN
ap-4877	337	27	effect	effect	NOUN
ap-4877	337	28	transistors	transistor	NOUN
ap-4877	337	29	.	.	PUNCT
ap-4877	338	1	stanford	stanford	PROPN
ap-4877	338	2	university	university	PROPN
ap-4877	338	3	,	,	PUNCT
ap-4877	338	4	ph.d	ph.d	PROPN
ap-4877	338	5	dissertation	dissertation	NOUN
ap-4877	338	6	,	,	PUNCT
ap-4877	338	7	2007	2007	NUM
ap-4877	338	8	.	.	PUNCT
ap-4877	339	1	[	[	X
ap-4877	339	2	23	23	NUM
ap-4877	339	3	]	]	X
ap-4877	339	4	maedeh	maedeh	NOUN
ap-4877	339	5	akbari	akbari	PROPN
ap-4877	339	6	eshkalak	eshkalak	PROPN
ap-4877	339	7	,	,	PUNCT
ap-4877	339	8	mohammad	mohammad	PROPN
ap-4877	339	9	k.anvarifardb	k.anvarifardb	PROPN
ap-4877	339	10	.	.	PUNCT
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ap-4877	340	4	nanoribbon	nanoribbon	NOUN
ap-4877	340	5	fet	fet	NOUN
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ap-4877	340	7	an	an	DET
ap-4877	340	8	extra	extra	ADJ
ap-4877	340	9	peak	peak	NOUN
ap-4877	340	10	electric	electric	ADJ
ap-4877	340	11	field	field	NOUN
ap-4877	340	12	(	(	PUNCT
ap-4877	340	13	efp	efp	PROPN
ap-4877	340	14	-	-	PUNCT
ap-4877	340	15	gnrfet	gnrfet	NOUN
ap-4877	340	16	)	)	PUNCT
ap-4877	340	17	for	for	ADP
ap-4877	340	18	enhancing	enhance	VERB
ap-4877	340	19	the	the	DET
ap-4877	340	20	electrical	electrical	ADJ
ap-4877	340	21	performances	performance	NOUN
ap-4877	340	22	.	.	PUNCT
ap-4877	341	1	physics	physics	NOUN
ap-4877	341	2	letters	letter	NOUN
ap-4877	341	3	a	a	DET
ap-4877	341	4	381(16):1379	381(16):1379	PROPN
ap-4877	341	5	-	-	PUNCT
ap-4877	341	6	1385	1385	NUM
ap-4877	341	7	,	,	PUNCT
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ap-4877	341	9	.	.	PUNCT
ap-4877	342	1	[	[	X
ap-4877	342	2	24	24	NUM
ap-4877	342	3	]	]	SYM
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ap-4877	342	5	akbari	akbari	PROPN
ap-4877	342	6	eshkalak	eshkalak	PROPN
ap-4877	342	7	,	,	PUNCT
ap-4877	342	8	mohammad	mohammad	PROPN
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ap-4877	343	3	for	for	ADP
ap-4877	343	4	achieving	achieve	VERB
ap-4877	343	5	the	the	DET
ap-4877	343	6	best	good	ADJ
ap-4877	343	7	electrical	electrical	ADJ
ap-4877	343	8	performance	performance	NOUN
ap-4877	343	9	with	with	ADP
ap-4877	343	10	strategy	strategy	NOUN
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ap-4877	343	12	halo	halo	NOUN
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ap-4877	343	15	nanoribbon	nanoribbon	NOUN
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ap-4877	343	19	.	.	PUNCT
ap-4877	344	1	ecs	ecs	PROPN
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ap-4877	344	4	state	state	PROPN
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ap-4877	344	7	tech	tech	PROPN
ap-4877	344	8	.	.	PUNCT
ap-4877	345	1	5(12):m141	5(12):m141	NUM
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ap-4877	345	3	m147	m147	NUM
ap-4877	345	4	,	,	PUNCT
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ap-4877	345	6	.	.	PUNCT
ap-4877	346	1	[	[	X
ap-4877	346	2	25	25	NUM
ap-4877	346	3	]	]	PUNCT
ap-4877	346	4	m.	m.	PROPN
ap-4877	346	5	kavitha	kavitha	PROPN
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ap-4877	346	7	t.	t.	PROPN
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ap-4877	346	9	.	.	PUNCT
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ap-4877	347	2	leakage	leakage	NOUN
ap-4877	347	3	charge	charge	NOUN
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ap-4877	347	10	vlsi	vlsi	PROPN
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ap-4877	348	2	midem	midem	PROPN
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ap-4877	348	9	45(1):66	45(1):66	PROPN
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ap-4877	350	13	.	.	PUNCT
ap-4877	351	1	i	i	PRON
ap-4877	351	2	-	-	PUNCT
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ap-4877	351	13	.	.	PUNCT
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ap-4877	352	9	.	.	PUNCT
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ap-4877	353	9	stability	stability	NOUN
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ap-4877	353	11	in	in	ADP
ap-4877	353	12	sram	sram	PROPN
ap-4877	353	13	cell	cell	NOUN
ap-4877	353	14	.	.	PUNCT
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ap-4877	354	6	-	-	SYM
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ap-4877	354	8	,	,	PUNCT
ap-4877	354	9	2016	2016	NUM
ap-4877	354	10	.	.	PUNCT
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ap-4877	355	2	/	/	SYM
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ap-4877	355	4	-	-	PUNCT
ap-4877	355	5	016	016	NUM
ap-4877	355	6	-	-	PUNCT
ap-4877	355	7	2047	2047	NUM
ap-4877	355	8	-	-	SYM
ap-4877	355	9	0	0	PUNCT
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ap-4877	356	7	t.	t.	PROPN
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ap-4877	358	1	j	j	PROPN
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ap-4877	358	3	electron	electron	PROPN
ap-4877	358	4	engg	engg	PROPN
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ap-4877	358	6	-	-	SYM
ap-4877	358	7	24	24	NUM
ap-4877	358	8	,	,	PUNCT
ap-4877	358	9	2016	2016	NUM
ap-4877	358	10	.	.	PUNCT
ap-4877	359	1	[	[	X
ap-4877	359	2	29	29	NUM
ap-4877	359	3	]	]	X
ap-4877	359	4	m.	m.	PROPN
ap-4877	359	5	kavitha	kavitha	PROPN
ap-4877	359	6	,	,	PUNCT
ap-4877	359	7	t.	t.	PROPN
ap-4877	359	8	govindaraj	govindaraj	PROPN
ap-4877	359	9	.	.	PUNCT
ap-4877	360	1	low	low	ADJ
ap-4877	360	2	leakage	leakage	NOUN
ap-4877	360	3	power	power	NOUN
ap-4877	360	4	gating	gating	NOUN
ap-4877	360	5	technique	technique	NOUN
ap-4877	360	6	for	for	ADP
ap-4877	360	7	subnanometer	subnanometer	NOUN
ap-4877	360	8	cmos	cmos	ADJ
ap-4877	360	9	circuits	circuit	NOUN
ap-4877	360	10	.	.	PUNCT
ap-4877	361	1	turk	turk	PROPN
ap-4877	361	2	j	j	PROPN
ap-4877	361	3	elect	elect	PROPN
ap-4877	361	4	engg	engg	PROPN
ap-4877	361	5	comp	comp	PROPN
ap-4877	361	6	sci	sci	PROPN
ap-4877	361	7	24(6):5011	24(6):5011	PROPN
ap-4877	361	8	-	-	SYM
ap-4877	361	9	5024	5024	NUM
ap-4877	361	10	,	,	PUNCT
ap-4877	361	11	2016	2016	NUM
ap-4877	361	12	.	.	PUNCT
ap-4877	361	13	doi:10.3906	doi:10.3906	NOUN
ap-4877	361	14	/	/	SYM
ap-4877	361	15	elk-1410	elk-1410	NOUN
ap-4877	361	16	-	-	PUNCT
ap-4877	361	17	175	175	NUM
ap-4877	361	18	[	[	X
ap-4877	361	19	30	30	NUM
ap-4877	361	20	]	]	PUNCT
ap-4877	361	21	shengqi	shengqi	PROPN
ap-4877	361	22	yang	yang	PROPN
ap-4877	361	23	,	,	PUNCT
ap-4877	361	24	w.wolf	w.wolf	ADV
ap-4877	361	25	,	,	PUNCT
ap-4877	361	26	n.vijaykrishnan	n.vijaykrishnan	ADV
ap-4877	361	27	.	.	PUNCT
ap-4877	362	1	yuan	yuan	PROPN
ap-4877	362	2	xie	xie	PROPN
ap-4877	362	3	,	,	PUNCT
ap-4877	362	4	wenping	wenpe	VERB
ap-4877	362	5	wang	wang	PROPN
ap-4877	362	6	.	.	PUNCT
ap-4877	363	1	accurate	accurate	ADJ
ap-4877	363	2	stacking	stacking	NOUN
ap-4877	363	3	effect	effect	NOUN
ap-4877	363	4	macro	macro	NOUN
ap-4877	363	5	-	-	NOUN
ap-4877	363	6	modeling	modeling	NOUN
ap-4877	363	7	of	of	ADP
ap-4877	363	8	leakage	leakage	NOUN
ap-4877	363	9	power	power	NOUN
ap-4877	363	10	in	in	ADP
ap-4877	363	11	sub-100	sub-100	ADJ
ap-4877	363	12	nm	nm	ADJ
ap-4877	363	13	circuits	circuit	NOUN
ap-4877	363	14	.	.	PUNCT
ap-4877	364	1	18th	18th	ADJ
ap-4877	364	2	intl	intl	PROPN
ap-4877	364	3	.	.	PUNCT
ap-4877	364	4	conf	conf	PROPN
ap-4877	364	5	.	.	PUNCT
ap-4877	365	1	vlsi	vlsi	PROPN
ap-4877	365	2	design	design	PROPN
ap-4877	365	3	165	165	NUM
ap-4877	365	4	-	-	SYM
ap-4877	365	5	170	170	NUM
ap-4877	365	6	,	,	PUNCT
ap-4877	365	7	2005	2005	NUM
ap-4877	365	8	.	.	PUNCT
ap-4877	366	1	[	[	X
ap-4877	366	2	31	31	NUM
ap-4877	366	3	]	]	PUNCT
ap-4877	366	4	stanford	stanford	PROPN
ap-4877	366	5	university	university	PROPN
ap-4877	366	6	cntfet	cntfet	PROPN
ap-4877	366	7	model	model	PROPN
ap-4877	366	8	website	website	PROPN
ap-4877	366	9	.	.	PUNCT
ap-4877	367	1	http://nano.stanford.edu/model	http://nano.stanford.edu/model	PROPN
ap-4877	368	1	[	[	X
ap-4877	368	2	32	32	NUM
ap-4877	368	3	]	]	PUNCT
ap-4877	368	4	m.	m.	PROPN
ap-4877	368	5	kavitha	kavitha	PROPN
ap-4877	368	6	,	,	PUNCT
ap-4877	368	7	a.m.kalpana	a.m.kalpana	PROPN
ap-4877	368	8	.	.	PUNCT
ap-4877	369	1	carbon	carbon	NOUN
ap-4877	369	2	nanoubes	nanoube	NOUN
ap-4877	369	3	:	:	PUNCT
ap-4877	369	4	properties	property	NOUN
ap-4877	369	5	and	and	CCONJ
ap-4877	369	6	applications	application	NOUN
ap-4877	369	7	-	-	PUNCT
ap-4877	369	8	a	a	DET
ap-4877	369	9	brief	brief	ADJ
ap-4877	369	10	review	review	NOUN
ap-4877	369	11	.	.	PUNCT
ap-4877	370	1	i	i	PRON
ap-4877	370	2	-	-	PUNCT
ap-4877	370	3	manager	manager	NOUN
ap-4877	370	4	’s	’s	PART
ap-4877	370	5	j	j	PROPN
ap-4877	370	6	electron	electron	PROPN
ap-4877	370	7	engg	engg	PROPN
ap-4877	370	8	7(3):1	7(3):1	PROPN
ap-4877	370	9	-	-	PUNCT
ap-4877	370	10	6	6	NUM
ap-4877	370	11	,	,	PUNCT
ap-4877	370	12	2017	2017	NUM
ap-4877	370	13	.	.	PUNCT
ap-4877	371	1	34	34	NUM
ap-4877	371	2	http://dx.doi.org/10.1109/ted.2007.909043	http://dx.doi.org/10.1109/ted.2007.909043	NOUN
ap-4877	371	3	http://dx.doi.org/10.1007/s13369-016-2047-0	http://dx.doi.org/10.1007/s13369-016-2047-0	PUNCT
ap-4877	372	1	http://dx.doi.org/10.3906/elk-1410-175	http://dx.doi.org/10.3906/elk-1410-175	PROPN
ap-4877	372	2	http://nano.stanford.edu/model	http://nano.stanford.edu/model	PROPN
ap-4877	372	3	acta	acta	PROPN
ap-4877	372	4	polytechnica	polytechnica	PROPN
ap-4877	372	5	59(1):24–34	59(1):24–34	NUM
ap-4877	372	6	,	,	PUNCT
ap-4877	372	7	2019	2019	NUM
ap-4877	372	8	1	1	NUM
ap-4877	372	9	introduction	introduction	NOUN
ap-4877	372	10	2	2	NUM
ap-4877	372	11	literature	literature	NOUN
ap-4877	372	12	review	review	VERB
ap-4877	372	13	2.1	2.1	NUM
ap-4877	372	14	power	power	NOUN
ap-4877	372	15	gating	gate	VERB
ap-4877	372	16	techiques	techique	NOUN
ap-4877	372	17	2.2	2.2	NUM
ap-4877	372	18	carbon	carbon	NOUN
ap-4877	372	19	nanotubes	nanotube	NOUN
ap-4877	372	20	3	3	NUM
ap-4877	372	21	llcr	llcr	NOUN
ap-4877	372	22	power	power	NOUN
ap-4877	372	23	gating	gate	VERB
ap-4877	372	24	structure	structure	NOUN
ap-4877	372	25	4	4	NUM
ap-4877	372	26	simulation	simulation	NOUN
ap-4877	372	27	results	result	VERB
ap-4877	372	28	4.1	4.1	NUM
ap-4877	372	29	impact	impact	NOUN
ap-4877	372	30	of	of	ADP
ap-4877	372	31	the	the	DET
ap-4877	372	32	number	number	NOUN
ap-4877	372	33	of	of	ADP
ap-4877	372	34	carbon	carbon	NOUN
ap-4877	372	35	nanotubes	nanotube	NOUN
ap-4877	372	36	(	(	PUNCT
ap-4877	372	37	n	n	CCONJ
ap-4877	372	38	)	)	PUNCT
ap-4877	372	39	4.2	4.2	NUM
ap-4877	372	40	impact	impact	NOUN
ap-4877	372	41	of	of	ADP
ap-4877	372	42	carbon	carbon	NOUN
ap-4877	372	43	nanotube	nanotube	NOUN
ap-4877	372	44	diameter	diameter	NOUN
ap-4877	372	45	(	(	PUNCT
ap-4877	372	46	dcnt	dcnt	PROPN
ap-4877	372	47	)	)	PUNCT
ap-4877	372	48	4.3	4.3	NUM
ap-4877	372	49	impact	impact	NOUN
ap-4877	372	50	of	of	ADP
ap-4877	372	51	pitch	pitch	NOUN
ap-4877	372	52	(	(	PUNCT
ap-4877	372	53	s	s	NOUN
ap-4877	372	54	)	)	PUNCT
ap-4877	372	55	4.4	4.4	NUM
ap-4877	372	56	impact	impact	NOUN
ap-4877	372	57	of	of	ADP
ap-4877	372	58	oxide	oxide	NOUN
ap-4877	372	59	thickness	thickness	NOUN
ap-4877	372	60	(	(	PUNCT
ap-4877	372	61	tox	tox	NOUN
ap-4877	372	62	)	)	PUNCT
ap-4877	372	63	5	5	NUM
ap-4877	372	64	conclusions	conclusion	NOUN
ap-4877	372	65	references	reference	NOUN