id	sid	tid	token	lemma	pos
ap-850	1	1	ap_06_4.vp	ap_06_4.vp	NOUN
ap-850	1	2	1	1	NUM
ap-850	1	3	solar	solar	ADJ
ap-850	1	4	cells	cell	NOUN
ap-850	1	5	a	a	DET
ap-850	1	6	solar	solar	ADJ
ap-850	1	7	cell	cell	NOUN
ap-850	1	8	,	,	PUNCT
ap-850	1	9	or	or	CCONJ
ap-850	1	10	photovoltaic	photovoltaic	NOUN
ap-850	1	11	cell	cell	NOUN
ap-850	1	12	,	,	PUNCT
ap-850	1	13	is	be	AUX
ap-850	1	14	a	a	DET
ap-850	1	15	semiconductor	semiconductor	NOUN
ap-850	1	16	device	device	NOUN
ap-850	1	17	consisting	consist	VERB
ap-850	1	18	of	of	ADP
ap-850	1	19	a	a	DET
ap-850	1	20	large	large	ADJ
ap-850	1	21	-	-	PUNCT
ap-850	1	22	area	area	NOUN
ap-850	1	23	p	p	NOUN
ap-850	1	24	-	-	PUNCT
ap-850	1	25	n	n	PRON
ap-850	1	26	junction	junction	NOUN
ap-850	1	27	diode	diode	NOUN
ap-850	1	28	,	,	PUNCT
ap-850	1	29	which	which	PRON
ap-850	1	30	in	in	ADP
ap-850	1	31	the	the	DET
ap-850	1	32	presence	presence	NOUN
ap-850	1	33	of	of	ADP
ap-850	1	34	sunlight	sunlight	NOUN
ap-850	1	35	is	be	AUX
ap-850	1	36	capable	capable	ADJ
ap-850	1	37	of	of	ADP
ap-850	1	38	generating	generate	VERB
ap-850	1	39	usable	usable	ADJ
ap-850	1	40	electrical	electrical	ADJ
ap-850	1	41	energy	energy	NOUN
ap-850	1	42	.	.	PUNCT
ap-850	2	1	this	this	DET
ap-850	2	2	conversion	conversion	NOUN
ap-850	2	3	is	be	AUX
ap-850	2	4	called	call	VERB
ap-850	2	5	the	the	DET
ap-850	2	6	photovoltaic	photovoltaic	ADJ
ap-850	2	7	effect	effect	NOUN
ap-850	2	8	.	.	PUNCT
ap-850	3	1	when	when	SCONJ
ap-850	3	2	light	light	NOUN
ap-850	3	3	strikes	strike	VERB
ap-850	3	4	the	the	DET
ap-850	3	5	p	p	NOUN
ap-850	3	6	-	-	PUNCT
ap-850	3	7	n	n	NOUN
ap-850	3	8	junction	junction	NOUN
ap-850	3	9	of	of	ADP
ap-850	3	10	a	a	DET
ap-850	3	11	semi	semi	ADJ
ap-850	3	12	-	-	NOUN
ap-850	3	13	conductor	conductor	ADJ
ap-850	3	14	the	the	DET
ap-850	3	15	absorbed	absorb	VERB
ap-850	3	16	photon	photon	NOUN
ap-850	3	17	energy	energy	NOUN
ap-850	3	18	releases	release	VERB
ap-850	3	19	an	an	DET
ap-850	3	20	electron	electron	NOUN
ap-850	3	21	from	from	ADP
ap-850	3	22	the	the	DET
ap-850	3	23	p	p	ADJ
ap-850	3	24	-	-	PUNCT
ap-850	3	25	type	type	NOUN
ap-850	3	26	region	region	NOUN
ap-850	3	27	and	and	CCONJ
ap-850	3	28	moves	move	VERB
ap-850	3	29	it	it	PRON
ap-850	3	30	to	to	ADP
ap-850	3	31	the	the	DET
ap-850	3	32	n	n	CCONJ
ap-850	3	33	-	-	PUNCT
ap-850	3	34	type	type	NOUN
ap-850	3	35	,	,	PUNCT
ap-850	3	36	creating	create	VERB
ap-850	3	37	a	a	DET
ap-850	3	38	hole	hole	NOUN
ap-850	3	39	in	in	ADP
ap-850	3	40	the	the	DET
ap-850	3	41	valence	valence	NOUN
ap-850	3	42	band	band	NOUN
ap-850	3	43	and	and	CCONJ
ap-850	3	44	producing	produce	VERB
ap-850	3	45	a	a	DET
ap-850	3	46	current	current	NOUN
ap-850	3	47	.	.	PUNCT
ap-850	4	1	the	the	DET
ap-850	4	2	main	main	ADJ
ap-850	4	3	criteria	criterion	NOUN
ap-850	4	4	for	for	ADP
ap-850	4	5	the	the	DET
ap-850	4	6	selected	select	VERB
ap-850	4	7	solar	solar	ADJ
ap-850	4	8	cell	cell	NOUN
ap-850	4	9	are	be	AUX
ap-850	4	10	efficiency	efficiency	NOUN
ap-850	4	11	and	and	CCONJ
ap-850	4	12	costs	cost	NOUN
ap-850	4	13	.	.	PUNCT
ap-850	5	1	these	these	PRON
ap-850	5	2	define	define	VERB
ap-850	5	3	the	the	DET
ap-850	5	4	performance	performance	NOUN
ap-850	5	5	and	and	CCONJ
ap-850	5	6	availability	availability	NOUN
ap-850	5	7	,	,	PUNCT
ap-850	5	8	and	and	CCONJ
ap-850	5	9	they	they	PRON
ap-850	5	10	can	can	AUX
ap-850	5	11	vary	vary	VERB
ap-850	5	12	greatly	greatly	ADV
ap-850	5	13	.	.	PUNCT
ap-850	6	1	this	this	DET
ap-850	6	2	paper	paper	NOUN
ap-850	6	3	deals	deal	NOUN
ap-850	6	4	with	with	ADP
ap-850	6	5	problems	problem	NOUN
ap-850	6	6	of	of	ADP
ap-850	6	7	efficiency	efficiency	NOUN
ap-850	6	8	influenced	influence	VERB
ap-850	6	9	by	by	ADP
ap-850	6	10	imperfections	imperfection	NOUN
ap-850	6	11	of	of	ADP
ap-850	6	12	crystal	crystal	NOUN
ap-850	6	13	lattices	lattice	NOUN
ap-850	6	14	,	,	PUNCT
ap-850	6	15	and	and	CCONJ
ap-850	6	16	the	the	DET
ap-850	6	17	applicability	applicability	NOUN
ap-850	6	18	of	of	ADP
ap-850	6	19	the	the	DET
ap-850	6	20	basic	basic	ADJ
ap-850	6	21	diagnostic	diagnostic	ADJ
ap-850	6	22	method	method	NOUN
ap-850	6	23	used	use	VERB
ap-850	6	24	for	for	ADP
ap-850	6	25	determining	determine	VERB
ap-850	6	26	such	such	ADJ
ap-850	6	27	imperfections	imperfection	NOUN
ap-850	6	28	.	.	PUNCT
ap-850	7	1	free	free	ADJ
ap-850	7	2	charge	charge	NOUN
ap-850	7	3	carriers	carrier	NOUN
ap-850	7	4	generated	generate	VERB
ap-850	7	5	by	by	ADP
ap-850	7	6	impacting	impact	VERB
ap-850	7	7	light	light	NOUN
ap-850	7	8	(	(	PUNCT
ap-850	7	9	known	know	VERB
ap-850	7	10	as	as	ADP
ap-850	7	11	excess	excess	ADJ
ap-850	7	12	carriers	carrier	NOUN
ap-850	7	13	)	)	PUNCT
ap-850	7	14	move	move	VERB
ap-850	7	15	in	in	ADP
ap-850	7	16	all	all	DET
ap-850	7	17	directions	direction	NOUN
ap-850	7	18	from	from	ADP
ap-850	7	19	their	their	PRON
ap-850	7	20	place	place	NOUN
ap-850	7	21	of	of	ADP
ap-850	7	22	origin	origin	NOUN
ap-850	7	23	.	.	PUNCT
ap-850	8	1	an	an	DET
ap-850	8	2	important	important	ADJ
ap-850	8	3	quantity	quantity	NOUN
ap-850	8	4	defining	define	VERB
ap-850	8	5	the	the	DET
ap-850	8	6	range	range	NOUN
ap-850	8	7	of	of	ADP
ap-850	8	8	a	a	DET
ap-850	8	9	generated	generate	VERB
ap-850	8	10	charge	charge	NOUN
ap-850	8	11	carrier	carrier	NOUN
ap-850	8	12	is	be	AUX
ap-850	8	13	its	its	PRON
ap-850	8	14	lifetime	lifetime	NOUN
ap-850	8	15	,	,	PUNCT
ap-850	8	16	i.e.	i.e.	X
ap-850	8	17	,	,	PUNCT
ap-850	8	18	the	the	DET
ap-850	8	19	time	time	NOUN
ap-850	8	20	that	that	PRON
ap-850	8	21	passes	pass	VERB
ap-850	8	22	before	before	SCONJ
ap-850	8	23	an	an	DET
ap-850	8	24	electron	electron	NOUN
ap-850	8	25	meets	meet	VERB
ap-850	8	26	a	a	DET
ap-850	8	27	hole	hole	NOUN
ap-850	8	28	and	and	CCONJ
ap-850	8	29	recombines	recombine	NOUN
ap-850	8	30	.	.	PUNCT
ap-850	9	1	however	however	ADV
ap-850	9	2	,	,	PUNCT
ap-850	9	3	as	as	SCONJ
ap-850	9	4	electrons	electron	NOUN
ap-850	9	5	and	and	CCONJ
ap-850	9	6	holes	hole	NOUN
ap-850	9	7	reach	reach	VERB
ap-850	9	8	the	the	DET
ap-850	9	9	boundary	boundary	NOUN
ap-850	9	10	of	of	ADP
ap-850	9	11	the	the	DET
ap-850	9	12	p	p	NOUN
ap-850	9	13	-	-	PUNCT
ap-850	9	14	n	n	NOUN
ap-850	9	15	junction	junction	NOUN
ap-850	9	16	,	,	PUNCT
ap-850	9	17	they	they	PRON
ap-850	9	18	are	be	AUX
ap-850	9	19	rapidly	rapidly	ADV
ap-850	9	20	swept	sweep	VERB
ap-850	9	21	by	by	ADP
ap-850	9	22	the	the	DET
ap-850	9	23	electric	electric	ADJ
ap-850	9	24	field	field	NOUN
ap-850	9	25	of	of	ADP
ap-850	9	26	this	this	DET
ap-850	9	27	junction	junction	NOUN
ap-850	9	28	,	,	PUNCT
ap-850	9	29	either	either	CCONJ
ap-850	9	30	to	to	ADP
ap-850	9	31	the	the	DET
ap-850	9	32	p	p	NOUN
ap-850	9	33	-	-	PUNCT
ap-850	9	34	side	side	NOUN
ap-850	9	35	(	(	PUNCT
ap-850	9	36	in	in	ADP
ap-850	9	37	the	the	DET
ap-850	9	38	case	case	NOUN
ap-850	9	39	of	of	ADP
ap-850	9	40	holes	hole	NOUN
ap-850	9	41	)	)	PUNCT
ap-850	9	42	or	or	CCONJ
ap-850	9	43	to	to	ADP
ap-850	9	44	the	the	DET
ap-850	9	45	n	n	CCONJ
ap-850	9	46	-	-	PUNCT
ap-850	9	47	side	side	NOUN
ap-850	9	48	(	(	PUNCT
ap-850	9	49	in	in	ADP
ap-850	9	50	the	the	DET
ap-850	9	51	case	case	NOUN
ap-850	9	52	of	of	ADP
ap-850	9	53	electrons	electron	NOUN
ap-850	9	54	)	)	PUNCT
ap-850	9	55	,	,	PUNCT
ap-850	9	56	generating	generate	VERB
ap-850	9	57	voltage	voltage	NOUN
ap-850	9	58	on	on	ADP
ap-850	9	59	the	the	DET
ap-850	9	60	outer	outer	ADJ
ap-850	9	61	electrodes	electrode	NOUN
ap-850	9	62	.	.	PUNCT
ap-850	10	1	the	the	DET
ap-850	10	2	basic	basic	ADJ
ap-850	10	3	means	mean	NOUN
ap-850	10	4	for	for	ADP
ap-850	10	5	lowering	lower	VERB
ap-850	10	6	carrier	carrier	NOUN
ap-850	10	7	lifetimes	lifetime	NOUN
ap-850	10	8	are	be	AUX
ap-850	10	9	lattice	lattice	ADJ
ap-850	10	10	vibrations	vibration	NOUN
ap-850	10	11	(	(	PUNCT
ap-850	10	12	phonons	phonon	NOUN
ap-850	10	13	)	)	PUNCT
ap-850	10	14	and	and	CCONJ
ap-850	10	15	impurities	impurity	NOUN
ap-850	10	16	or	or	CCONJ
ap-850	10	17	,	,	PUNCT
ap-850	10	18	generally	generally	ADV
ap-850	10	19	speaking	speak	VERB
ap-850	10	20	,	,	PUNCT
ap-850	10	21	lattice	lattice	NOUN
ap-850	10	22	impurities	impurity	NOUN
ap-850	10	23	.	.	PUNCT
ap-850	11	1	as	as	SCONJ
ap-850	11	2	lattice	lattice	NOUN
ap-850	11	3	vibrations	vibration	NOUN
ap-850	11	4	depend	depend	VERB
ap-850	11	5	only	only	ADV
ap-850	11	6	on	on	ADP
ap-850	11	7	crystal	crystal	NOUN
ap-850	11	8	structure	structure	NOUN
ap-850	11	9	and	and	CCONJ
ap-850	11	10	temperature	temperature	NOUN
ap-850	11	11	,	,	PUNCT
ap-850	11	12	which	which	PRON
ap-850	11	13	are	be	AUX
ap-850	11	14	fixed	fix	VERB
ap-850	11	15	for	for	ADP
ap-850	11	16	a	a	DET
ap-850	11	17	specific	specific	ADJ
ap-850	11	18	semiconductor	semiconductor	NOUN
ap-850	11	19	material	material	NOUN
ap-850	11	20	and	and	CCONJ
ap-850	11	21	usage	usage	NOUN
ap-850	11	22	,	,	PUNCT
ap-850	11	23	we	we	PRON
ap-850	11	24	will	will	AUX
ap-850	11	25	be	be	AUX
ap-850	11	26	concerned	concern	VERB
ap-850	11	27	here	here	ADV
ap-850	11	28	with	with	ADP
ap-850	11	29	lattice	lattice	NOUN
ap-850	11	30	impurities	impurity	NOUN
ap-850	11	31	and	and	CCONJ
ap-850	11	32	their	their	PRON
ap-850	11	33	effect	effect	NOUN
ap-850	11	34	on	on	ADP
ap-850	11	35	the	the	DET
ap-850	11	36	lifetime	lifetime	NOUN
ap-850	11	37	of	of	ADP
ap-850	11	38	charge	charge	NOUN
ap-850	11	39	carriers	carrier	NOUN
ap-850	11	40	.	.	PUNCT
ap-850	12	1	2	2	NUM
ap-850	12	2	problems	problem	NOUN
ap-850	12	3	of	of	ADP
ap-850	12	4	carrier	carrier	NOUN
ap-850	12	5	trapping	trap	VERB
ap-850	12	6	and	and	CCONJ
ap-850	12	7	recombination	recombination	NOUN
ap-850	12	8	every	every	DET
ap-850	12	9	physical	physical	ADJ
ap-850	12	10	system	system	NOUN
ap-850	12	11	attempts	attempt	VERB
ap-850	12	12	to	to	PART
ap-850	12	13	achieve	achieve	VERB
ap-850	12	14	so	so	ADV
ap-850	12	15	-	-	PUNCT
ap-850	12	16	called	call	VERB
ap-850	12	17	thermal	thermal	ADJ
ap-850	12	18	equilibrium	equilibrium	NOUN
ap-850	12	19	as	as	ADV
ap-850	12	20	soon	soon	ADV
ap-850	12	21	as	as	ADP
ap-850	12	22	possible	possible	ADJ
ap-850	12	23	,	,	PUNCT
ap-850	12	24	as	as	SCONJ
ap-850	12	25	do	do	VERB
ap-850	12	26	excess	excess	ADJ
ap-850	12	27	carriers	carrier	NOUN
ap-850	12	28	.	.	PUNCT
ap-850	13	1	in	in	ADP
ap-850	13	2	the	the	DET
ap-850	13	3	case	case	NOUN
ap-850	13	4	of	of	ADP
ap-850	13	5	silicon	silicon	NOUN
ap-850	13	6	,	,	PUNCT
ap-850	13	7	which	which	PRON
ap-850	13	8	is	be	AUX
ap-850	13	9	widely	widely	ADV
ap-850	13	10	used	use	VERB
ap-850	13	11	in	in	ADP
ap-850	13	12	photovoltaic	photovoltaic	NOUN
ap-850	13	13	applications	application	NOUN
ap-850	13	14	,	,	PUNCT
ap-850	13	15	the	the	DET
ap-850	13	16	way	way	NOUN
ap-850	13	17	to	to	PART
ap-850	13	18	achieve	achieve	VERB
ap-850	13	19	thermal	thermal	ADJ
ap-850	13	20	equilibrium	equilibrium	NOUN
ap-850	13	21	,	,	PUNCT
ap-850	13	22	is	be	AUX
ap-850	13	23	either	either	CCONJ
ap-850	13	24	by	by	ADP
ap-850	13	25	auger	auger	NOUN
ap-850	13	26	recombination	recombination	NOUN
ap-850	13	27	or	or	CCONJ
ap-850	13	28	by	by	ADP
ap-850	13	29	capturing	capture	VERB
ap-850	13	30	free	free	ADJ
ap-850	13	31	charge	charge	NOUN
ap-850	13	32	carriers	carrier	NOUN
ap-850	13	33	on	on	ADP
ap-850	13	34	energy	energy	NOUN
ap-850	13	35	levels	level	NOUN
ap-850	13	36	that	that	PRON
ap-850	13	37	lie	lie	VERB
ap-850	13	38	in	in	ADP
ap-850	13	39	the	the	DET
ap-850	13	40	band	band	NOUN
ap-850	13	41	that	that	PRON
ap-850	13	42	separates	separate	VERB
ap-850	13	43	the	the	DET
ap-850	13	44	conduction	conduction	NOUN
ap-850	13	45	and	and	CCONJ
ap-850	13	46	valence	valence	NOUN
ap-850	13	47	band	band	NOUN
ap-850	13	48	(	(	PUNCT
ap-850	13	49	the	the	DET
ap-850	13	50	forbidden	forbid	VERB
ap-850	13	51	band	band	NOUN
ap-850	13	52	,	,	PUNCT
ap-850	13	53	or	or	CCONJ
ap-850	13	54	the	the	DET
ap-850	13	55	band	band	NOUN
ap-850	13	56	gap	gap	NOUN
ap-850	13	57	)	)	PUNCT
ap-850	13	58	.	.	PUNCT
ap-850	14	1	these	these	DET
ap-850	14	2	energy	energy	NOUN
ap-850	14	3	levels	level	NOUN
ap-850	14	4	can	can	AUX
ap-850	14	5	originate	originate	VERB
ap-850	14	6	either	either	CCONJ
ap-850	14	7	from	from	ADP
ap-850	14	8	an	an	DET
ap-850	14	9	imperfection	imperfection	NOUN
ap-850	14	10	of	of	ADP
ap-850	14	11	the	the	DET
ap-850	14	12	crystal	crystal	NOUN
ap-850	14	13	lattice	lattice	NOUN
ap-850	14	14	(	(	PUNCT
ap-850	14	15	e.g.	e.g.	ADJ
ap-850	14	16	,	,	PUNCT
ap-850	14	17	dislocation	dislocation	NOUN
ap-850	14	18	)	)	PUNCT
ap-850	14	19	or	or	CCONJ
ap-850	14	20	from	from	ADP
ap-850	14	21	foreign	foreign	ADJ
ap-850	14	22	atoms	atom	NOUN
ap-850	14	23	in	in	ADP
ap-850	14	24	some	some	DET
ap-850	14	25	positions	position	NOUN
ap-850	14	26	of	of	ADP
ap-850	14	27	the	the	DET
ap-850	14	28	lattice	lattice	NOUN
ap-850	14	29	,	,	PUNCT
ap-850	14	30	or	or	CCONJ
ap-850	14	31	even	even	ADV
ap-850	14	32	from	from	ADP
ap-850	14	33	complex	complex	ADJ
ap-850	14	34	crystal	crystal	NOUN
ap-850	14	35	defects	defect	NOUN
ap-850	14	36	induced	induce	VERB
ap-850	14	37	,	,	PUNCT
ap-850	14	38	for	for	ADP
ap-850	14	39	example	example	NOUN
ap-850	14	40	,	,	PUNCT
ap-850	14	41	by	by	ADP
ap-850	14	42	radiation	radiation	NOUN
ap-850	14	43	.	.	PUNCT
ap-850	15	1	these	these	DET
ap-850	15	2	imperfections	imperfection	NOUN
ap-850	15	3	strongly	strongly	ADV
ap-850	15	4	influence	influence	VERB
ap-850	15	5	the	the	DET
ap-850	15	6	electron	electron	NOUN
ap-850	15	7	and	and	CCONJ
ap-850	15	8	hole	hole	NOUN
ap-850	15	9	transport	transport	NOUN
ap-850	15	10	through	through	ADP
ap-850	15	11	the	the	DET
ap-850	15	12	bulk	bulk	NOUN
ap-850	15	13	of	of	ADP
ap-850	15	14	the	the	DET
ap-850	15	15	semiconductor	semiconductor	NOUN
ap-850	15	16	device	device	NOUN
ap-850	15	17	.	.	PUNCT
ap-850	16	1	they	they	PRON
ap-850	16	2	can	can	AUX
ap-850	16	3	act	act	VERB
ap-850	16	4	either	either	CCONJ
ap-850	16	5	as	as	ADP
ap-850	16	6	a	a	DET
ap-850	16	7	trap	trap	NOUN
ap-850	16	8	,	,	PUNCT
ap-850	16	9	where	where	SCONJ
ap-850	16	10	an	an	DET
ap-850	16	11	electron	electron	NOUN
ap-850	16	12	or	or	CCONJ
ap-850	16	13	a	a	DET
ap-850	16	14	hole	hole	NOUN
ap-850	16	15	is	be	AUX
ap-850	16	16	trapped	trap	VERB
ap-850	16	17	on	on	ADP
ap-850	16	18	this	this	DET
ap-850	16	19	level	level	NOUN
ap-850	16	20	for	for	ADP
ap-850	16	21	a	a	DET
ap-850	16	22	certain	certain	ADJ
ap-850	16	23	time	time	NOUN
ap-850	16	24	,	,	PUNCT
ap-850	16	25	or	or	CCONJ
ap-850	16	26	as	as	ADP
ap-850	16	27	a	a	DET
ap-850	16	28	generation	generation	NOUN
ap-850	16	29	-	-	PUNCT
ap-850	16	30	recombination	recombination	NOUN
ap-850	16	31	(	(	PUNCT
ap-850	16	32	g	g	NOUN
ap-850	16	33	-	-	PUNCT
ap-850	16	34	r	r	NOUN
ap-850	16	35	)	)	PUNCT
ap-850	16	36	center	center	NOUN
ap-850	16	37	,	,	PUNCT
ap-850	16	38	where	where	SCONJ
ap-850	16	39	one	one	NUM
ap-850	16	40	charge	charge	NOUN
ap-850	16	41	carrier	carrier	NOUN
ap-850	16	42	annihilates	annihilate	VERB
ap-850	16	43	with	with	ADP
ap-850	16	44	a	a	DET
ap-850	16	45	carrier	carrier	NOUN
ap-850	16	46	with	with	ADP
ap-850	16	47	the	the	DET
ap-850	16	48	opposite	opposite	ADJ
ap-850	16	49	charge	charge	NOUN
ap-850	16	50	.	.	PUNCT
ap-850	17	1	3	3	NUM
ap-850	17	2	dark	dark	ADV
ap-850	17	3	forward	forward	ADV
ap-850	17	4	i	i	PROPN
ap-850	17	5	-	-	PUNCT
ap-850	17	6	v	v	PROPN
ap-850	17	7	characteristics	characteristic	NOUN
ap-850	17	8	of	of	ADP
ap-850	17	9	solar	solar	ADJ
ap-850	17	10	cells	cell	NOUN
ap-850	17	11	when	when	SCONJ
ap-850	17	12	conducted	conduct	VERB
ap-850	17	13	under	under	ADP
ap-850	17	14	different	different	ADJ
ap-850	17	15	temperatures	temperature	NOUN
ap-850	17	16	,	,	PUNCT
ap-850	17	17	this	this	DET
ap-850	17	18	method	method	NOUN
ap-850	17	19	provides	provide	VERB
ap-850	17	20	many	many	ADJ
ap-850	17	21	parameters	parameter	NOUN
ap-850	17	22	of	of	ADP
ap-850	17	23	a	a	DET
ap-850	17	24	solar	solar	ADJ
ap-850	17	25	cell	cell	NOUN
ap-850	17	26	,	,	PUNCT
ap-850	17	27	e.g.	e.g.	ADV
ap-850	17	28	,	,	PUNCT
ap-850	17	29	the	the	DET
ap-850	17	30	temperature	temperature	NOUN
ap-850	17	31	dependence	dependence	NOUN
ap-850	17	32	of	of	ADP
ap-850	17	33	the	the	DET
ap-850	17	34	shunt	shunt	NOUN
ap-850	17	35	resistance	resistance	NOUN
ap-850	17	36	and	and	CCONJ
ap-850	17	37	diode	diode	NOUN
ap-850	17	38	factor	factor	NOUN
ap-850	17	39	,	,	PUNCT
ap-850	17	40	the	the	DET
ap-850	17	41	energy	energy	NOUN
ap-850	17	42	and	and	CCONJ
ap-850	17	43	concentration	concentration	NOUN
ap-850	17	44	of	of	ADP
ap-850	17	45	the	the	DET
ap-850	17	46	dominant	dominant	ADJ
ap-850	17	47	recombination	recombination	NOUN
ap-850	17	48	center	center	NOUN
ap-850	17	49	,	,	PUNCT
ap-850	17	50	the	the	DET
ap-850	17	51	lifetime	lifetime	NOUN
ap-850	17	52	of	of	ADP
ap-850	17	53	the	the	DET
ap-850	17	54	charge	charge	NOUN
ap-850	17	55	carriers	carrier	NOUN
ap-850	17	56	.	.	PUNCT
ap-850	18	1	the	the	DET
ap-850	18	2	measuring	measure	VERB
ap-850	18	3	apparatus	apparatus	NOUN
ap-850	18	4	works	work	VERB
ap-850	18	5	with	with	ADP
ap-850	18	6	a	a	DET
ap-850	18	7	current	current	ADJ
ap-850	18	8	source	source	NOUN
ap-850	18	9	with	with	ADP
ap-850	18	10	a	a	DET
ap-850	18	11	range	range	NOUN
ap-850	18	12	of	of	ADP
ap-850	18	13	0	0	NUM
ap-850	18	14	to	to	PART
ap-850	18	15	100	100	NUM
ap-850	18	16	ma	ma	PROPN
ap-850	18	17	.	.	PUNCT
ap-850	19	1	the	the	DET
ap-850	19	2	temperature	temperature	NOUN
ap-850	19	3	range	range	NOUN
ap-850	19	4	is	be	AUX
ap-850	19	5	from	from	ADP
ap-850	19	6	approximately	approximately	ADV
ap-850	19	7	20	20	NUM
ap-850	19	8	°	°	NOUN
ap-850	19	9	c	c	NOUN
ap-850	19	10	to	to	ADP
ap-850	19	11	150	150	NUM
ap-850	19	12	°	°	NOUN
ap-850	19	13	c	c	NOUN
ap-850	19	14	.	.	PUNCT
ap-850	20	1	the	the	DET
ap-850	20	2	process	process	NOUN
ap-850	20	3	itself	itself	PRON
ap-850	20	4	is	be	AUX
ap-850	20	5	controlled	control	VERB
ap-850	20	6	by	by	ADP
ap-850	20	7	a	a	DET
ap-850	20	8	computer	computer	NOUN
ap-850	20	9	via	via	ADP
ap-850	20	10	a	a	DET
ap-850	20	11	serial	serial	ADJ
ap-850	20	12	bus	bus	NOUN
ap-850	20	13	rs232	rs232	PROPN
ap-850	20	14	,	,	PUNCT
ap-850	20	15	and	and	CCONJ
ap-850	20	16	the	the	DET
ap-850	20	17	data	datum	NOUN
ap-850	20	18	(	(	PUNCT
ap-850	20	19	values	value	NOUN
ap-850	20	20	of	of	ADP
ap-850	20	21	voltage	voltage	NOUN
ap-850	20	22	and	and	CCONJ
ap-850	20	23	current	current	ADJ
ap-850	20	24	)	)	PUNCT
ap-850	20	25	is	be	AUX
ap-850	20	26	stored	store	VERB
ap-850	20	27	on	on	ADP
ap-850	20	28	the	the	DET
ap-850	20	29	hard	hard	ADJ
ap-850	20	30	drive	drive	NOUN
ap-850	20	31	.	.	PUNCT
ap-850	21	1	the	the	DET
ap-850	21	2	dark	dark	ADJ
ap-850	21	3	current	current	NOUN
ap-850	21	4	of	of	ADP
ap-850	21	5	forward	forward	ADV
ap-850	21	6	biased	biased	ADJ
ap-850	21	7	solar	solar	ADJ
ap-850	21	8	cell	cell	NOUN
ap-850	21	9	idf	idf	PROPN
ap-850	21	10	can	can	AUX
ap-850	21	11	be	be	AUX
ap-850	21	12	expressed	express	VERB
ap-850	21	13	by	by	ADP
ap-850	21	14	the	the	DET
ap-850	21	15	formula	formula	NOUN
ap-850	21	16	i	i	PRON
ap-850	22	1	a	a	DET
ap-850	22	2	j	j	X
ap-850	22	3	e	e	ADP
ap-850	22	4	v	v	NOUN
ap-850	22	5	r	r	NOUN
ap-850	22	6	i	i	PRON
ap-850	22	7	kt	kt	VERB
ap-850	22	8	a	a	DET
ap-850	22	9	j	j	PROPN
ap-850	22	10	e	e	ADP
ap-850	22	11	v	v	NOUN
ap-850	22	12	r	r	NOUN
ap-850	23	1	i	i	PRON
ap-850	23	2	df	df	VERB
ap-850	23	3	s	s	PROPN
ap-850	23	4	s	s	PROPN
ap-850	23	5	�	�	PROPN
ap-850	23	6	�	�	PROPN
ap-850	23	7	�	�	PROPN
ap-850	23	8	�	�	PROPN
ap-850	23	9	�	�	PROPN
ap-850	23	10	�	�	PROPN
ap-850	23	11	�	�	PROPN
ap-850	23	12	�	�	PROPN
ap-850	23	13	�	�	PROPN
ap-850	23	14	�	�	PROPN
ap-850	23	15	�	�	PROPN
ap-850	23	16	�	�	PROPN
ap-850	23	17	�	�	PROPN
ap-850	23	18	�	�	PROPN
ap-850	23	19	01	01	NUM
ap-850	23	20	1	1	NUM
ap-850	23	21	02	02	NUM
ap-850	23	22	exp	exp	NOUN
ap-850	23	23	exp	exp	NOUN
ap-850	23	24	�	�	PROPN
ap-850	23	25	�	�	PROPN
ap-850	23	26	2	2	NUM
ap-850	23	27	1	1	NUM
ap-850	23	28	kt	kt	PROPN
ap-850	23	29	v	v	NOUN
ap-850	23	30	r	r	NOUN
ap-850	24	1	i	i	NOUN
ap-850	24	2	r	r	PROPN
ap-850	24	3	�	�	PROPN
ap-850	24	4	�	�	PROPN
ap-850	24	5	�	�	PROPN
ap-850	24	6	�	�	PROPN
ap-850	24	7	�	�	PROPN
ap-850	24	8	�	�	PROPN
ap-850	24	9	�	�	PROPN
ap-850	24	10	�	�	PROPN
ap-850	24	11	�	�	PROPN
ap-850	24	12	�	�	PROPN
ap-850	24	13	�	�	PROPN
ap-850	24	14	�	�	PROPN
ap-850	24	15	�	�	PROPN
ap-850	24	16	s	s	PART
ap-850	24	17	p	p	X
ap-850	24	18	,	,	PUNCT
ap-850	24	19	(	(	PUNCT
ap-850	24	20	1	1	X
ap-850	24	21	)	)	PUNCT
ap-850	24	22	where	where	SCONJ
ap-850	24	23	a	a	DET
ap-850	24	24	stands	stand	VERB
ap-850	24	25	for	for	ADP
ap-850	24	26	the	the	DET
ap-850	24	27	area	area	NOUN
ap-850	24	28	of	of	ADP
ap-850	24	29	the	the	DET
ap-850	24	30	sample	sample	NOUN
ap-850	24	31	,	,	PUNCT
ap-850	24	32	j01	j01	PROPN
ap-850	24	33	is	be	AUX
ap-850	24	34	diffusion	diffusion	NOUN
ap-850	24	35	current	current	ADJ
ap-850	24	36	density	density	NOUN
ap-850	24	37	,	,	PUNCT
ap-850	24	38	j02	j02	PROPN
ap-850	24	39	is	be	AUX
ap-850	24	40	generation	generation	NOUN
ap-850	24	41	-	-	PUNCT
ap-850	24	42	recombination	recombination	NOUN
ap-850	24	43	current	current	ADJ
ap-850	24	44	density	density	NOUN
ap-850	24	45	,	,	PUNCT
ap-850	24	46	�	�	PROPN
ap-850	24	47	1	1	NUM
ap-850	24	48	and	and	CCONJ
ap-850	24	49	�	�	NOUN
ap-850	24	50	2	2	NUM
ap-850	24	51	are	be	AUX
ap-850	24	52	the	the	DET
ap-850	24	53	diode	diode	NOUN
ap-850	24	54	factors	factor	NOUN
ap-850	24	55	,	,	PUNCT
ap-850	24	56	rs	rs	X
ap-850	24	57	is	be	AUX
ap-850	24	58	the	the	DET
ap-850	24	59	series	series	NOUN
ap-850	24	60	resistance	resistance	NOUN
ap-850	24	61	,	,	PUNCT
ap-850	24	62	rp	rp	NOUN
ap-850	24	63	is	be	AUX
ap-850	24	64	the	the	DET
ap-850	24	65	shunt	shunt	NOUN
ap-850	24	66	resistance	resistance	NOUN
ap-850	24	67	,	,	PUNCT
ap-850	24	68	e	e	X
ap-850	24	69	is	be	AUX
ap-850	24	70	the	the	DET
ap-850	24	71	electric	electric	ADJ
ap-850	24	72	charge	charge	NOUN
ap-850	24	73	,	,	PUNCT
ap-850	24	74	and	and	CCONJ
ap-850	24	75	k	k	PROPN
ap-850	24	76	is	be	AUX
ap-850	24	77	the	the	DET
ap-850	24	78	bolzmann	bolzmann	NOUN
ap-850	24	79	constant	constant	ADJ
ap-850	24	80	.	.	PUNCT
ap-850	25	1	the	the	DET
ap-850	25	2	series	series	PROPN
ap-850	25	3	resistance	resistance	NOUN
ap-850	25	4	of	of	ADP
ap-850	25	5	large	large	ADJ
ap-850	25	6	-	-	PUNCT
ap-850	25	7	area	area	NOUN
ap-850	25	8	solar	solar	ADJ
ap-850	25	9	cells	cell	NOUN
ap-850	25	10	is	be	AUX
ap-850	25	11	small	small	ADJ
ap-850	25	12	and	and	CCONJ
ap-850	25	13	can	can	AUX
ap-850	25	14	be	be	AUX
ap-850	25	15	negligible	negligible	ADJ
ap-850	25	16	.	.	PUNCT
ap-850	26	1	the	the	DET
ap-850	26	2	plotted	plot	VERB
ap-850	26	3	graph	graph	NOUN
ap-850	26	4	of	of	ADP
ap-850	26	5	i	i	PROPN
ap-850	26	6	-	-	PUNCT
ap-850	26	7	v	v	PROPN
ap-850	26	8	characteristics	characteristic	NOUN
ap-850	26	9	is	be	AUX
ap-850	26	10	divided	divide	VERB
ap-850	26	11	into	into	ADP
ap-850	26	12	three	three	NUM
ap-850	26	13	regions	region	NOUN
ap-850	26	14	:	:	PUNCT
ap-850	27	1	1	1	X
ap-850	27	2	.	.	X
ap-850	27	3	in	in	ADP
ap-850	27	4	the	the	DET
ap-850	27	5	range	range	NOUN
ap-850	27	6	0–40	0–40	PROPN
ap-850	27	7	mv	mv	PROPN
ap-850	27	8	,	,	PUNCT
ap-850	27	9	the	the	DET
ap-850	27	10	influence	influence	NOUN
ap-850	27	11	of	of	ADP
ap-850	27	12	shunt	shunt	NOUN
ap-850	27	13	resistance	resistance	NOUN
ap-850	27	14	dominates	dominate	VERB
ap-850	27	15	and	and	CCONJ
ap-850	27	16	can	can	AUX
ap-850	27	17	be	be	AUX
ap-850	27	18	calculated	calculate	VERB
ap-850	27	19	;	;	PUNCT
ap-850	27	20	the	the	DET
ap-850	27	21	current	current	NOUN
ap-850	27	22	through	through	ADP
ap-850	27	23	the	the	DET
ap-850	27	24	cell	cell	NOUN
ap-850	27	25	can	can	AUX
ap-850	27	26	be	be	AUX
ap-850	27	27	expressed	express	VERB
ap-850	27	28	by	by	ADP
ap-850	27	29	:	:	PUNCT
ap-850	27	30	©	©	PROPN
ap-850	27	31	czech	czech	PROPN
ap-850	27	32	technical	technical	PROPN
ap-850	27	33	university	university	PROPN
ap-850	27	34	publishing	publishing	NOUN
ap-850	27	35	house	house	NOUN
ap-850	27	36	http://ctn.cvut.cz/ap/	http://ctn.cvut.cz/ap/	PROPN
ap-850	27	37	25	25	NUM
ap-850	27	38	acta	acta	PROPN
ap-850	27	39	polytechnica	polytechnica	PROPN
ap-850	27	40	vol	vol	NOUN
ap-850	27	41	.	.	PUNCT
ap-850	28	1	46	46	NUM
ap-850	28	2	no	no	INTJ
ap-850	28	3	.	.	PUNCT
ap-850	29	1	4/2006	4/2006	NUM
ap-850	29	2	measurement	measurement	NOUN
ap-850	29	3	of	of	ADP
ap-850	29	4	solar	solar	ADJ
ap-850	29	5	cell	cell	NOUN
ap-850	29	6	parameters	parameter	NOUN
ap-850	29	7	with	with	ADP
ap-850	29	8	dark	dark	ADJ
ap-850	29	9	forward	forward	ADV
ap-850	29	10	i	i	PROPN
ap-850	29	11	-	-	PUNCT
ap-850	29	12	v	v	PROPN
ap-850	29	13	characteristics	characteristic	NOUN
ap-850	29	14	j.	j.	PROPN
ap-850	29	15	salinger	salinger	PROPN
ap-850	29	16	the	the	DET
ap-850	29	17	grade	grade	NOUN
ap-850	29	18	of	of	ADP
ap-850	29	19	a	a	DET
ap-850	29	20	solar	solar	ADJ
ap-850	29	21	cell	cell	NOUN
ap-850	29	22	depends	depend	VERB
ap-850	29	23	mainly	mainly	ADV
ap-850	29	24	on	on	ADP
ap-850	29	25	the	the	DET
ap-850	29	26	quality	quality	NOUN
ap-850	29	27	of	of	ADP
ap-850	29	28	the	the	DET
ap-850	29	29	starting	starting	NOUN
ap-850	29	30	material	material	NOUN
ap-850	29	31	.	.	PUNCT
ap-850	30	1	during	during	ADP
ap-850	30	2	the	the	DET
ap-850	30	3	production	production	NOUN
ap-850	30	4	of	of	ADP
ap-850	30	5	this	this	DET
ap-850	30	6	material	material	NOUN
ap-850	30	7	,	,	PUNCT
ap-850	30	8	many	many	ADJ
ap-850	30	9	impurities	impurity	NOUN
ap-850	30	10	are	be	AUX
ap-850	30	11	left	leave	VERB
ap-850	30	12	in	in	ADP
ap-850	30	13	the	the	DET
ap-850	30	14	bulk	bulk	ADJ
ap-850	30	15	material	material	NOUN
ap-850	30	16	and	and	CCONJ
ap-850	30	17	form	form	VERB
ap-850	30	18	defect	defect	NOUN
ap-850	30	19	levels	level	NOUN
ap-850	30	20	in	in	ADP
ap-850	30	21	the	the	DET
ap-850	30	22	band	band	NOUN
ap-850	30	23	-	-	PUNCT
ap-850	30	24	gap	gap	NOUN
ap-850	30	25	,	,	PUNCT
ap-850	30	26	which	which	PRON
ap-850	30	27	act	act	VERB
ap-850	30	28	as	as	ADP
ap-850	30	29	generation	generation	NOUN
ap-850	30	30	-	-	PUNCT
ap-850	30	31	recombination	recombination	NOUN
ap-850	30	32	centers	center	NOUN
ap-850	30	33	or	or	CCONJ
ap-850	30	34	charge	charge	NOUN
ap-850	30	35	carrier	carrier	NOUN
ap-850	30	36	traps	trap	NOUN
ap-850	30	37	.	.	PUNCT
ap-850	31	1	these	these	DET
ap-850	31	2	levels	level	NOUN
ap-850	31	3	influence	influence	VERB
ap-850	31	4	the	the	DET
ap-850	31	5	efficiency	efficiency	NOUN
ap-850	31	6	of	of	ADP
ap-850	31	7	solar	solar	ADJ
ap-850	31	8	cells	cell	NOUN
ap-850	31	9	.	.	PUNCT
ap-850	32	1	therefore	therefore	ADV
ap-850	32	2	knowledge	knowledge	NOUN
ap-850	32	3	of	of	ADP
ap-850	32	4	the	the	DET
ap-850	32	5	parameters	parameter	NOUN
ap-850	32	6	of	of	ADP
ap-850	32	7	these	these	DET
ap-850	32	8	levels	level	NOUN
ap-850	32	9	,	,	PUNCT
ap-850	32	10	e.g.	e.g.	ADV
ap-850	32	11	,	,	PUNCT
ap-850	32	12	energy	energy	NOUN
ap-850	32	13	position	position	NOUN
ap-850	32	14	,	,	PUNCT
ap-850	32	15	capture	capture	NOUN
ap-850	32	16	cross	cross	PROPN
ap-850	32	17	section	section	NOUN
ap-850	32	18	and	and	CCONJ
ap-850	32	19	concentration	concentration	NOUN
ap-850	32	20	,	,	PUNCT
ap-850	32	21	is	be	AUX
ap-850	32	22	very	very	ADV
ap-850	32	23	useful	useful	ADJ
ap-850	32	24	for	for	ADP
ap-850	32	25	solar	solar	ADJ
ap-850	32	26	cell	cell	NOUN
ap-850	32	27	engineering	engineering	NOUN
ap-850	32	28	.	.	PUNCT
ap-850	33	1	in	in	ADP
ap-850	33	2	this	this	DET
ap-850	33	3	paper	paper	NOUN
ap-850	33	4	emphasis	emphasis	NOUN
ap-850	33	5	is	be	AUX
ap-850	33	6	placed	place	VERB
ap-850	33	7	on	on	ADP
ap-850	33	8	a	a	DET
ap-850	33	9	simple	simple	ADJ
ap-850	33	10	and	and	CCONJ
ap-850	33	11	fast	fast	ADJ
ap-850	33	12	method	method	NOUN
ap-850	33	13	for	for	ADP
ap-850	33	14	obtaining	obtain	VERB
ap-850	33	15	these	these	DET
ap-850	33	16	parameters	parameter	NOUN
ap-850	33	17	,	,	PUNCT
ap-850	33	18	namely	namely	ADV
ap-850	33	19	measurements	measurement	NOUN
ap-850	33	20	of	of	ADP
ap-850	33	21	dark	dark	ADJ
ap-850	33	22	characteristics	characteristic	NOUN
ap-850	33	23	.	.	PUNCT
ap-850	34	1	preliminary	preliminary	ADJ
ap-850	34	2	results	result	NOUN
ap-850	34	3	are	be	AUX
ap-850	34	4	introduced	introduce	VERB
ap-850	34	5	,	,	PUNCT
ap-850	34	6	together	together	ADV
ap-850	34	7	with	with	ADP
ap-850	34	8	the	the	DET
ap-850	34	9	difficulties	difficulty	NOUN
ap-850	34	10	and	and	CCONJ
ap-850	34	11	limits	limit	NOUN
ap-850	34	12	of	of	ADP
ap-850	34	13	this	this	DET
ap-850	34	14	method	method	NOUN
ap-850	34	15	.	.	PUNCT
ap-850	35	1	keywords	keyword	NOUN
ap-850	35	2	:	:	PUNCT
ap-850	35	3	solar	solar	ADJ
ap-850	35	4	cell	cell	NOUN
ap-850	35	5	,	,	PUNCT
ap-850	35	6	lattice	lattice	NOUN
ap-850	35	7	imperfections	imperfection	NOUN
ap-850	35	8	,	,	PUNCT
ap-850	35	9	lifetime	lifetime	NOUN
ap-850	35	10	,	,	PUNCT
ap-850	35	11	dark	dark	ADJ
ap-850	35	12	i	i	PROPN
ap-850	35	13	-	-	PUNCT
ap-850	35	14	v	v	NUM
ap-850	35	15	characteristics	characteristic	NOUN
ap-850	35	16	.	.	PUNCT
ap-850	36	1	i	i	PRON
ap-850	36	2	v	v	VERB
ap-850	36	3	rdf	rdf	VERB
ap-850	36	4	p	p	PROPN
ap-850	36	5	�	�	PROPN
ap-850	36	6	.	.	PUNCT
ap-850	37	1	(	(	PUNCT
ap-850	37	2	2	2	NUM
ap-850	37	3	)	)	PUNCT
ap-850	37	4	2	2	NUM
ap-850	37	5	.	.	X
ap-850	38	1	in	in	ADP
ap-850	38	2	the	the	DET
ap-850	38	3	range	range	NOUN
ap-850	38	4	40–300	40–300	NUM
ap-850	38	5	mv	mv	NOUN
ap-850	38	6	,	,	PUNCT
ap-850	38	7	the	the	DET
ap-850	38	8	generation	generation	NOUN
ap-850	38	9	-	-	PUNCT
ap-850	38	10	recombination	recombination	NOUN
ap-850	38	11	compound	compound	NOUN
ap-850	38	12	of	of	ADP
ap-850	38	13	the	the	DET
ap-850	38	14	total	total	ADJ
ap-850	38	15	current	current	ADJ
ap-850	38	16	predominates	predominate	VERB
ap-850	38	17	,	,	PUNCT
ap-850	38	18	so	so	SCONJ
ap-850	38	19	it	it	PRON
ap-850	38	20	can	can	AUX
ap-850	38	21	be	be	AUX
ap-850	38	22	expressed	express	VERB
ap-850	38	23	by	by	ADP
ap-850	38	24	:	:	PUNCT
ap-850	38	25	i	i	PROPN
ap-850	38	26	a	a	PRON
ap-850	38	27	j	j	PROPN
ap-850	38	28	e	e	ADP
ap-850	38	29	v	v	ADP
ap-850	38	30	kt	kt	PROPN
ap-850	38	31	v	v	NOUN
ap-850	38	32	rdf	rdf	ADP
ap-850	38	33	p	p	PROPN
ap-850	38	34	�	�	PROPN
ap-850	38	35	�	�	PROPN
ap-850	38	36	�	�	PROPN
ap-850	38	37	�	�	PROPN
ap-850	38	38	�	�	PROPN
ap-850	38	39	�	�	PROPN
ap-850	38	40	�	�	PROPN
ap-850	38	41	�	�	PROPN
ap-850	38	42	�	�	PROPN
ap-850	38	43	�	�	PROPN
ap-850	38	44	�	�	PROPN
ap-850	38	45	�	�	PROPN
ap-850	38	46	�	�	PROPN
ap-850	38	47	02	02	NUM
ap-850	38	48	2	2	NUM
ap-850	38	49	1exp	1exp	PROPN
ap-850	38	50	�	�	PROPN
ap-850	38	51	.	.	PUNCT
ap-850	39	1	(	(	PUNCT
ap-850	39	2	3	3	X
ap-850	39	3	)	)	PUNCT
ap-850	39	4	3	3	NUM
ap-850	39	5	.	.	X
ap-850	40	1	above	above	ADP
ap-850	40	2	300	300	NUM
ap-850	40	3	mv	mv	NOUN
ap-850	40	4	,	,	PUNCT
ap-850	40	5	the	the	DET
ap-850	40	6	first	first	ADJ
ap-850	40	7	term	term	NOUN
ap-850	40	8	in	in	ADP
ap-850	40	9	the	the	DET
ap-850	40	10	expression	expression	NOUN
ap-850	40	11	of	of	ADP
ap-850	40	12	the	the	DET
ap-850	40	13	total	total	ADJ
ap-850	40	14	current	current	ADJ
ap-850	40	15	(	(	PUNCT
ap-850	40	16	diffusion	diffusion	NOUN
ap-850	40	17	compound	compound	NOUN
ap-850	40	18	)	)	PUNCT
ap-850	40	19	is	be	AUX
ap-850	40	20	dominant	dominant	ADJ
ap-850	40	21	,	,	PUNCT
ap-850	40	22	so	so	ADV
ap-850	40	23	,	,	PUNCT
ap-850	40	24	by	by	ADP
ap-850	40	25	the	the	DET
ap-850	40	26	curve	curve	NOUN
ap-850	40	27	fitting	fitting	ADJ
ap-850	40	28	method	method	NOUN
ap-850	40	29	,	,	PUNCT
ap-850	40	30	the	the	DET
ap-850	40	31	diffusion	diffusion	NOUN
ap-850	40	32	saturation	saturation	NOUN
ap-850	40	33	current	current	ADJ
ap-850	40	34	and	and	CCONJ
ap-850	40	35	the	the	DET
ap-850	40	36	diffusion	diffusion	NOUN
ap-850	40	37	diode	diode	NOUN
ap-850	40	38	factor	factor	NOUN
ap-850	40	39	can	can	AUX
ap-850	40	40	be	be	AUX
ap-850	40	41	extracted	extract	VERB
ap-850	40	42	.	.	PUNCT
ap-850	41	1	4	4	X
ap-850	41	2	.	.	X
ap-850	41	3	extracting	extract	VERB
ap-850	41	4	the	the	DET
ap-850	41	5	cell	cell	NOUN
ap-850	41	6	parameters	parameter	NOUN
ap-850	41	7	the	the	DET
ap-850	41	8	generation	generation	NOUN
ap-850	41	9	-	-	PUNCT
ap-850	41	10	recombination	recombination	NOUN
ap-850	41	11	current	current	ADJ
ap-850	41	12	density	density	NOUN
ap-850	41	13	j02	j02	PROPN
ap-850	41	14	can	can	AUX
ap-850	41	15	be	be	AUX
ap-850	41	16	expressed	express	VERB
ap-850	41	17	by	by	ADP
ap-850	41	18	:	:	PUNCT
ap-850	41	19	j	j	PROPN
ap-850	41	20	e	e	PROPN
ap-850	41	21	n	n	X
ap-850	41	22	di	di	PROPN
ap-850	41	23	02	02	NUM
ap-850	41	24	�	�	PROPN
ap-850	41	25	�	�	PROPN
ap-850	41	26	sc	sc	PROPN
ap-850	41	27	.	.	PUNCT
ap-850	42	1	(	(	PUNCT
ap-850	42	2	4	4	X
ap-850	42	3	)	)	PUNCT
ap-850	42	4	this	this	PRON
ap-850	42	5	means	mean	VERB
ap-850	42	6	that	that	SCONJ
ap-850	42	7	the	the	DET
ap-850	42	8	density	density	NOUN
ap-850	42	9	j02	j02	PROPN
ap-850	42	10	is	be	AUX
ap-850	42	11	inversely	inversely	ADV
ap-850	42	12	proportional	proportional	ADJ
ap-850	42	13	to	to	ADP
ap-850	42	14	the	the	DET
ap-850	42	15	lifetime	lifetime	NOUN
ap-850	42	16	of	of	ADP
ap-850	42	17	the	the	DET
ap-850	42	18	charge	charge	NOUN
ap-850	42	19	carriers	carrier	NOUN
ap-850	42	20	in	in	ADP
ap-850	42	21	the	the	DET
ap-850	42	22	space	space	NOUN
ap-850	42	23	charge	charge	NOUN
ap-850	42	24	region	region	NOUN
ap-850	42	25	,	,	PUNCT
ap-850	42	26	for	for	ADP
ap-850	42	27	which	which	PRON
ap-850	42	28	in	in	ADP
ap-850	42	29	the	the	DET
ap-850	42	30	case	case	NOUN
ap-850	42	31	of	of	ADP
ap-850	42	32	a	a	DET
ap-850	42	33	single	single	ADJ
ap-850	42	34	trapping	trapping	NOUN
ap-850	42	35	level	level	NOUN
ap-850	42	36	the	the	DET
ap-850	42	37	following	follow	VERB
ap-850	42	38	formula	formula	NOUN
ap-850	42	39	can	can	AUX
ap-850	42	40	be	be	AUX
ap-850	42	41	obtained	obtain	VERB
ap-850	42	42	:	:	PUNCT
ap-850	42	43	�	�	PROPN
ap-850	42	44	�	�	PROPN
ap-850	42	45	�	�	PROPN
ap-850	42	46	sc	sc	PROPN
ap-850	42	47	p0	p0	PROPN
ap-850	42	48	n0	n0	PROPN
ap-850	42	49	�	�	PROPN
ap-850	42	50	�	�	PROPN
ap-850	42	51	�	�	PROPN
ap-850	42	52	�	�	PROPN
ap-850	42	53	�	�	PROPN
ap-850	42	54	�	�	PROPN
ap-850	42	55	�	�	PROPN
ap-850	42	56	�	�	PROPN
ap-850	42	57	�	�	PROPN
ap-850	42	58	�	�	PROPN
ap-850	42	59	�	�	PROPN
ap-850	42	60	�	�	PROPN
ap-850	42	61	�	�	PROPN
ap-850	42	62	�	�	PROPN
ap-850	42	63	�	�	PROPN
ap-850	42	64	exp	exp	NOUN
ap-850	42	65	exp	exp	PROPN
ap-850	42	66	w	w	PROPN
ap-850	42	67	w	w	PROPN
ap-850	42	68	kt	kt	PROPN
ap-850	42	69	w	w	PROPN
ap-850	42	70	w	w	PROPN
ap-850	42	71	kt	kt	PROPN
ap-850	42	72	t	t	PROPN
ap-850	42	73	i	i	PRON
ap-850	42	74	t	t	VERB
ap-850	42	75	i	i	PRON
ap-850	42	76	.	.	PUNCT
ap-850	43	1	(	(	PUNCT
ap-850	43	2	5	5	NUM
ap-850	43	3	)	)	PUNCT
ap-850	43	4	here	here	ADV
ap-850	43	5	,	,	PUNCT
ap-850	43	6	�	�	NOUN
ap-850	43	7	p0	p0	NOUN
ap-850	43	8	and	and	CCONJ
ap-850	43	9	�	�	PROPN
ap-850	43	10	n0	n0	PROPN
ap-850	43	11	stand	stand	VERB
ap-850	43	12	for	for	ADP
ap-850	43	13	the	the	DET
ap-850	43	14	lifetime	lifetime	NOUN
ap-850	43	15	of	of	ADP
ap-850	43	16	the	the	DET
ap-850	43	17	minority	minority	NOUN
ap-850	43	18	carriers	carrier	NOUN
ap-850	43	19	in	in	ADP
ap-850	43	20	an	an	DET
ap-850	43	21	n	n	CCONJ
ap-850	43	22	-	-	PUNCT
ap-850	43	23	type	type	NOUN
ap-850	43	24	semiconductor	semiconductor	NOUN
ap-850	43	25	or	or	CCONJ
ap-850	43	26	a	a	DET
ap-850	43	27	p	p	ADJ
ap-850	43	28	-	-	PUNCT
ap-850	43	29	type	type	NOUN
ap-850	43	30	semi	semi	ADJ
ap-850	43	31	-	-	NOUN
ap-850	43	32	conductor	conductor	NOUN
ap-850	43	33	,	,	PUNCT
ap-850	43	34	respectively	respectively	ADV
ap-850	43	35	,	,	PUNCT
ap-850	43	36	wt	wt	PROPN
ap-850	43	37	is	be	AUX
ap-850	43	38	the	the	DET
ap-850	43	39	energy	energy	NOUN
ap-850	43	40	level	level	NOUN
ap-850	43	41	of	of	ADP
ap-850	43	42	the	the	DET
ap-850	43	43	g	g	NOUN
ap-850	43	44	-	-	PUNCT
ap-850	43	45	r	r	NOUN
ap-850	43	46	center	center	NOUN
ap-850	43	47	(	(	PUNCT
ap-850	43	48	or	or	CCONJ
ap-850	43	49	trap	trap	NOUN
ap-850	43	50	)	)	PUNCT
ap-850	43	51	,	,	PUNCT
ap-850	43	52	and	and	CCONJ
ap-850	43	53	wi	wi	PROPN
ap-850	43	54	is	be	AUX
ap-850	43	55	the	the	DET
ap-850	43	56	intrinsic	intrinsic	ADJ
ap-850	43	57	fermi	fermi	NOUN
ap-850	43	58	level	level	NOUN
ap-850	43	59	[	[	X
ap-850	43	60	1	1	NUM
ap-850	43	61	]	]	PUNCT
ap-850	43	62	.	.	PUNCT
ap-850	44	1	with	with	ADP
ap-850	44	2	the	the	DET
ap-850	44	3	knowledge	knowledge	NOUN
ap-850	44	4	of	of	ADP
ap-850	44	5	these	these	DET
ap-850	44	6	lifetimes	lifetime	NOUN
ap-850	44	7	and	and	CCONJ
ap-850	44	8	the	the	DET
ap-850	44	9	capture	capture	NOUN
ap-850	44	10	cross	cross	PROPN
ap-850	44	11	sections	section	NOUN
ap-850	44	12	the	the	DET
ap-850	44	13	g	g	NOUN
ap-850	44	14	-	-	PUNCT
ap-850	44	15	r	r	NOUN
ap-850	44	16	center	center	NOUN
ap-850	44	17	concentration	concentration	NOUN
ap-850	44	18	nt	not	PART
ap-850	44	19	can	can	AUX
ap-850	44	20	also	also	ADV
ap-850	44	21	be	be	AUX
ap-850	44	22	extracted	extract	VERB
ap-850	44	23	.	.	PUNCT
ap-850	45	1	thus	thus	ADV
ap-850	45	2	,	,	PUNCT
ap-850	45	3	to	to	PART
ap-850	45	4	obtain	obtain	VERB
ap-850	45	5	the	the	DET
ap-850	45	6	maximum	maximum	ADJ
ap-850	45	7	parameters	parameter	NOUN
ap-850	45	8	of	of	ADP
ap-850	45	9	the	the	DET
ap-850	45	10	solar	solar	ADJ
ap-850	45	11	cell	cell	NOUN
ap-850	45	12	band	band	NOUN
ap-850	45	13	gap	gap	NOUN
ap-850	45	14	structure	structure	NOUN
ap-850	45	15	,	,	PUNCT
ap-850	45	16	we	we	PRON
ap-850	45	17	are	be	AUX
ap-850	45	18	interested	interested	ADJ
ap-850	45	19	in	in	ADP
ap-850	45	20	the	the	DET
ap-850	45	21	second	second	ADJ
ap-850	45	22	region	region	NOUN
ap-850	45	23	of	of	ADP
ap-850	45	24	the	the	DET
ap-850	45	25	plotted	plot	VERB
ap-850	45	26	graph	graph	NOUN
ap-850	45	27	.	.	PUNCT
ap-850	46	1	problems	problem	NOUN
ap-850	46	2	can	can	AUX
ap-850	46	3	arise	arise	VERB
ap-850	46	4	from	from	ADP
ap-850	46	5	the	the	DET
ap-850	46	6	fact	fact	NOUN
ap-850	46	7	that	that	SCONJ
ap-850	46	8	only	only	ADV
ap-850	46	9	a	a	DET
ap-850	46	10	single	single	ADJ
ap-850	46	11	recombination	recombination	NOUN
ap-850	46	12	level	level	NOUN
ap-850	46	13	can	can	AUX
ap-850	46	14	be	be	AUX
ap-850	46	15	extracted	extract	VERB
ap-850	46	16	from	from	ADP
ap-850	46	17	this	this	DET
ap-850	46	18	measurement	measurement	NOUN
ap-850	46	19	.	.	PUNCT
ap-850	47	1	if	if	SCONJ
ap-850	47	2	there	there	PRON
ap-850	47	3	are	be	VERB
ap-850	47	4	,	,	PUNCT
ap-850	47	5	for	for	ADP
ap-850	47	6	example	example	NOUN
ap-850	47	7	,	,	PUNCT
ap-850	47	8	two	two	NUM
ap-850	47	9	deep	deep	ADJ
ap-850	47	10	levels	level	NOUN
ap-850	47	11	of	of	ADP
ap-850	47	12	approximately	approximately	ADV
ap-850	47	13	the	the	DET
ap-850	47	14	same	same	ADJ
ap-850	47	15	concentration	concentration	NOUN
ap-850	47	16	,	,	PUNCT
ap-850	47	17	however	however	ADV
ap-850	47	18	,	,	PUNCT
ap-850	47	19	the	the	DET
ap-850	47	20	standard	standard	ADJ
ap-850	47	21	extracting	extract	VERB
ap-850	47	22	technique	technique	NOUN
ap-850	47	23	will	will	AUX
ap-850	47	24	lead	lead	VERB
ap-850	47	25	to	to	ADP
ap-850	47	26	incorrect	incorrect	ADJ
ap-850	47	27	values	value	NOUN
ap-850	47	28	of	of	ADP
ap-850	47	29	deep	deep	ADJ
ap-850	47	30	level	level	NOUN
ap-850	47	31	energy	energy	NOUN
ap-850	47	32	.	.	PUNCT
ap-850	48	1	to	to	PART
ap-850	48	2	evaluate	evaluate	VERB
ap-850	48	3	a	a	DET
ap-850	48	4	large	large	ADJ
ap-850	48	5	number	number	NOUN
ap-850	48	6	of	of	ADP
ap-850	48	7	parameters	parameter	NOUN
ap-850	48	8	,	,	PUNCT
ap-850	48	9	curve	curve	NOUN
ap-850	48	10	fitting	fitting	ADJ
ap-850	48	11	is	be	AUX
ap-850	48	12	used	use	VERB
ap-850	48	13	.	.	PUNCT
ap-850	49	1	while	while	SCONJ
ap-850	49	2	linear	linear	ADJ
ap-850	49	3	dependence	dependence	NOUN
ap-850	49	4	can	can	AUX
ap-850	49	5	be	be	AUX
ap-850	49	6	fitted	fit	VERB
ap-850	49	7	without	without	ADP
ap-850	49	8	problems	problem	NOUN
ap-850	49	9	,	,	PUNCT
ap-850	49	10	fitting	fitting	ADJ
ap-850	49	11	exponential	exponential	ADJ
ap-850	49	12	dependence	dependence	NOUN
ap-850	49	13	can	can	AUX
ap-850	49	14	be	be	AUX
ap-850	49	15	difficult	difficult	ADJ
ap-850	49	16	,	,	PUNCT
ap-850	49	17	and	and	CCONJ
ap-850	49	18	the	the	DET
ap-850	49	19	results	result	NOUN
ap-850	49	20	may	may	AUX
ap-850	49	21	vary	vary	VERB
ap-850	49	22	strongly	strongly	ADV
ap-850	49	23	with	with	ADP
ap-850	49	24	different	different	ADJ
ap-850	49	25	initial	initial	ADJ
ap-850	49	26	conditions	condition	NOUN
ap-850	49	27	.	.	PUNCT
ap-850	50	1	these	these	DET
ap-850	50	2	complex	complex	ADJ
ap-850	50	3	conditions	condition	NOUN
ap-850	50	4	may	may	AUX
ap-850	50	5	cause	cause	VERB
ap-850	50	6	errors	error	NOUN
ap-850	50	7	when	when	SCONJ
ap-850	50	8	simple	simple	ADJ
ap-850	50	9	fitting	fitting	ADJ
ap-850	50	10	techniques	technique	NOUN
ap-850	50	11	are	be	AUX
ap-850	50	12	applied	apply	VERB
ap-850	50	13	to	to	ADP
ap-850	50	14	them	they	PRON
ap-850	50	15	.	.	PUNCT
ap-850	51	1	for	for	ADP
ap-850	51	2	example	example	NOUN
ap-850	51	3	,	,	PUNCT
ap-850	51	4	non	non	ADJ
ap-850	51	5	-	-	ADJ
ap-850	51	6	linear	linear	ADJ
ap-850	51	7	dependence	dependence	NOUN
ap-850	51	8	of	of	ADP
ap-850	51	9	the	the	DET
ap-850	51	10	diode	diode	NOUN
ap-850	51	11	factor	factor	NOUN
ap-850	51	12	on	on	ADP
ap-850	51	13	temperature	temperature	NOUN
ap-850	51	14	is	be	AUX
ap-850	51	15	observed	observe	VERB
ap-850	51	16	.	.	PUNCT
ap-850	52	1	5	5	NUM
ap-850	52	2	parameters	parameter	NOUN
ap-850	52	3	of	of	ADP
ap-850	52	4	g	g	NOUN
ap-850	52	5	-	-	PUNCT
ap-850	52	6	r	r	NOUN
ap-850	52	7	centers	center	NOUN
ap-850	52	8	from	from	ADP
ap-850	52	9	i	i	PROPN
ap-850	52	10	-	-	PUNCT
ap-850	52	11	v	v	PROPN
ap-850	52	12	measurement	measurement	NOUN
ap-850	52	13	monocrystalline	monocrystalline	ADJ
ap-850	52	14	silicon	silicon	NOUN
ap-850	52	15	samples	sample	NOUN
ap-850	52	16	fabricated	fabricate	VERB
ap-850	52	17	by	by	ADP
ap-850	52	18	the	the	DET
ap-850	52	19	czochralsky	czochralsky	NOUN
ap-850	52	20	grown	grow	VERB
ap-850	52	21	method	method	NOUN
ap-850	52	22	were	be	AUX
ap-850	52	23	used	use	VERB
ap-850	52	24	in	in	ADP
ap-850	52	25	the	the	DET
ap-850	52	26	measurements	measurement	NOUN
ap-850	52	27	.	.	PUNCT
ap-850	53	1	the	the	DET
ap-850	53	2	dimensions	dimension	NOUN
ap-850	53	3	were	be	AUX
ap-850	53	4	102×102	102×102	NUM
ap-850	53	5	mm	mm	NOUN
ap-850	53	6	,	,	PUNCT
ap-850	53	7	and	and	CCONJ
ap-850	53	8	each	each	DET
ap-850	53	9	sample	sample	NOUN
ap-850	53	10	represented	represent	VERB
ap-850	53	11	one	one	NUM
ap-850	53	12	batch	batch	NOUN
ap-850	53	13	.	.	PUNCT
ap-850	54	1	figs	fig	NOUN
ap-850	54	2	.	.	PUNCT
ap-850	55	1	1	1	NUM
ap-850	55	2	,	,	PUNCT
ap-850	55	3	2	2	NUM
ap-850	55	4	and	and	CCONJ
ap-850	55	5	3	3	NUM
ap-850	55	6	show	show	VERB
ap-850	55	7	the	the	DET
ap-850	55	8	temperature	temperature	NOUN
ap-850	55	9	dependence	dependence	NOUN
ap-850	55	10	of	of	ADP
ap-850	55	11	shunt	shunt	ADJ
ap-850	55	12	resistance	resistance	NOUN
ap-850	55	13	rp	rp	NOUN
ap-850	55	14	,	,	PUNCT
ap-850	55	15	diode	diode	NOUN
ap-850	55	16	factor	factor	NOUN
ap-850	55	17	�	�	NOUN
ap-850	55	18	2	2	NUM
ap-850	55	19	and	and	CCONJ
ap-850	55	20	g	g	NOUN
ap-850	55	21	-	-	PUNCT
ap-850	55	22	r	r	NOUN
ap-850	55	23	current	current	ADJ
ap-850	55	24	i02	i02	NOUN
ap-850	55	25	,	,	PUNCT
ap-850	55	26	respectively	respectively	ADV
ap-850	55	27	.	.	PUNCT
ap-850	56	1	for	for	ADP
ap-850	56	2	maximum	maximum	ADJ
ap-850	56	3	efficiency	efficiency	NOUN
ap-850	56	4	of	of	ADP
ap-850	56	5	a	a	DET
ap-850	56	6	solar	solar	ADJ
ap-850	56	7	cell	cell	NOUN
ap-850	56	8	,	,	PUNCT
ap-850	56	9	the	the	DET
ap-850	56	10	highest	high	ADJ
ap-850	56	11	shunt	shunt	NOUN
ap-850	56	12	resistance	resistance	NOUN
ap-850	56	13	is	be	AUX
ap-850	56	14	needed	need	VERB
ap-850	56	15	.	.	PUNCT
ap-850	57	1	the	the	DET
ap-850	57	2	measured	measure	VERB
ap-850	57	3	resistances	resistance	NOUN
ap-850	57	4	are	be	AUX
ap-850	57	5	shown	show	VERB
ap-850	57	6	in	in	ADP
ap-850	57	7	fig	fig	NOUN
ap-850	57	8	.	.	PUNCT
ap-850	58	1	1	1	X
ap-850	58	2	.	.	PUNCT
ap-850	59	1	the	the	DET
ap-850	59	2	values	value	NOUN
ap-850	59	3	of	of	ADP
ap-850	59	4	the	the	DET
ap-850	59	5	shunt	shunt	NOUN
ap-850	59	6	resistance	resistance	NOUN
ap-850	59	7	at	at	ADP
ap-850	59	8	the	the	DET
ap-850	59	9	highest	high	ADJ
ap-850	59	10	temperatures	temperature	NOUN
ap-850	59	11	were	be	AUX
ap-850	59	12	always	always	ADV
ap-850	59	13	lower	low	ADJ
ap-850	59	14	than	than	ADP
ap-850	59	15	at	at	ADP
ap-850	59	16	room	room	NOUN
ap-850	59	17	temperature	temperature	NOUN
ap-850	59	18	(	(	PUNCT
ap-850	59	19	rt	rt	NOUN
ap-850	59	20	)	)	PUNCT
ap-850	59	21	,	,	PUNCT
ap-850	59	22	but	but	CCONJ
ap-850	59	23	some	some	DET
ap-850	59	24	differences	difference	NOUN
ap-850	59	25	were	be	AUX
ap-850	59	26	found	find	VERB
ap-850	59	27	:	:	PUNCT
ap-850	59	28	26	26	NUM
ap-850	59	29	©	©	PROPN
ap-850	59	30	czech	czech	PROPN
ap-850	59	31	technical	technical	PROPN
ap-850	59	32	university	university	PROPN
ap-850	59	33	publishing	publishing	NOUN
ap-850	59	34	house	house	NOUN
ap-850	59	35	http://ctn.cvut.cz/ap/	http://ctn.cvut.cz/ap/	PROPN
ap-850	59	36	acta	acta	PROPN
ap-850	59	37	polytechnica	polytechnica	PROPN
ap-850	59	38	vol	vol	NOUN
ap-850	59	39	.	.	PUNCT
ap-850	60	1	46	46	NUM
ap-850	60	2	no	no	INTJ
ap-850	60	3	.	.	PUNCT
ap-850	61	1	4/2006	4/2006	PROPN
ap-850	61	2	p	p	ADJ
ap-850	61	3	fig	fig	NOUN
ap-850	61	4	:	:	PUNCT
ap-850	61	5	1	1	NUM
ap-850	61	6	:	:	PUNCT
ap-850	61	7	temperature	temperature	NOUN
ap-850	61	8	dependence	dependence	NOUN
ap-850	61	9	of	of	ADP
ap-850	61	10	shunt	shunt	ADJ
ap-850	61	11	resistance	resistance	NOUN
ap-850	61	12	rp	rp	NOUN
ap-850	61	13	of	of	ADP
ap-850	61	14	samples	sample	NOUN
ap-850	61	15	#	#	SYM
ap-850	61	16	1942	1942	NUM
ap-850	61	17	-	-	SYM
ap-850	61	18	02	02	NUM
ap-850	61	19	(	(	PUNCT
ap-850	61	20	�	�	PROPN
ap-850	61	21	)	)	PUNCT
ap-850	61	22	,	,	PUNCT
ap-850	61	23	#	#	SYM
ap-850	61	24	20	20	NUM
ap-850	61	25	(	(	PUNCT
ap-850	61	26	�	�	NOUN
ap-850	61	27	)	)	PUNCT
ap-850	61	28	and	and	CCONJ
ap-850	61	29	le2	le2	PROPN
ap-850	61	30	(	(	PUNCT
ap-850	61	31	�	�	PROPN
ap-850	61	32	)	)	PUNCT
ap-850	61	33	fig	fig	NOUN
ap-850	61	34	.	.	PUNCT
ap-850	62	1	2	2	NUM
ap-850	62	2	:	:	PUNCT
ap-850	62	3	temperature	temperature	NOUN
ap-850	62	4	dependence	dependence	NOUN
ap-850	62	5	of	of	ADP
ap-850	62	6	diode	diode	NOUN
ap-850	62	7	factor	factor	NOUN
ap-850	62	8	�	�	NOUN
ap-850	62	9	2	2	NUM
ap-850	62	10	of	of	ADP
ap-850	62	11	the	the	DET
ap-850	62	12	samples	sample	NOUN
ap-850	62	13	#	#	SYM
ap-850	62	14	1942	1942	NUM
ap-850	62	15	-	-	SYM
ap-850	62	16	02	02	NUM
ap-850	62	17	,	,	PUNCT
ap-850	62	18	#	#	SYM
ap-850	62	19	20	20	NUM
ap-850	62	20	and	and	CCONJ
ap-850	62	21	le2	le2	PROPN
ap-850	62	22	fig	fig	NOUN
ap-850	62	23	.	.	PUNCT
ap-850	63	1	3	3	NUM
ap-850	63	2	:	:	PUNCT
ap-850	63	3	temperature	temperature	NOUN
ap-850	63	4	dependence	dependence	NOUN
ap-850	63	5	of	of	ADP
ap-850	63	6	g	g	NOUN
ap-850	63	7	-	-	PUNCT
ap-850	63	8	r	r	NOUN
ap-850	63	9	current	current	ADJ
ap-850	63	10	i02	i02	NOUN
ap-850	63	11	of	of	ADP
ap-850	63	12	samples	sample	NOUN
ap-850	63	13	#	#	SYM
ap-850	63	14	1942	1942	NUM
ap-850	63	15	-	-	SYM
ap-850	63	16	02	02	NUM
ap-850	63	17	,	,	PUNCT
ap-850	63	18	#	#	SYM
ap-850	63	19	20	20	NUM
ap-850	63	20	and	and	CCONJ
ap-850	63	21	le2	le2	PROPN
ap-850	63	22	1	1	NUM
ap-850	63	23	.	.	PUNCT
ap-850	63	24	variation	variation	NOUN
ap-850	63	25	of	of	ADP
ap-850	63	26	more	more	ADJ
ap-850	63	27	than	than	ADP
ap-850	63	28	one	one	NUM
ap-850	63	29	order	order	NOUN
ap-850	63	30	between	between	ADP
ap-850	63	31	samples	sample	NOUN
ap-850	63	32	(	(	PUNCT
ap-850	63	33	e.g.	e.g.	ADV
ap-850	63	34	#	#	SYM
ap-850	63	35	1942	1942	NUM
ap-850	63	36	-	-	SYM
ap-850	63	37	02	02	NUM
ap-850	63	38	and	and	CCONJ
ap-850	63	39	le2	le2	PROPN
ap-850	63	40	)	)	PUNCT
ap-850	63	41	at	at	ADP
ap-850	63	42	rt	rt	PROPN
ap-850	63	43	.	.	PROPN
ap-850	63	44	2	2	NUM
ap-850	63	45	.	.	X
ap-850	63	46	samples	sample	NOUN
ap-850	63	47	such	such	ADJ
ap-850	63	48	as	as	ADP
ap-850	63	49	#	#	SYM
ap-850	63	50	1942	1942	NUM
ap-850	63	51	-	-	SYM
ap-850	63	52	02	02	NUM
ap-850	63	53	showed	show	VERB
ap-850	63	54	a	a	DET
ap-850	63	55	small	small	ADJ
ap-850	63	56	initial	initial	ADJ
ap-850	63	57	increase	increase	NOUN
ap-850	63	58	in	in	ADP
ap-850	63	59	the	the	DET
ap-850	63	60	shunt	shunt	NOUN
ap-850	63	61	resistance	resistance	NOUN
ap-850	63	62	before	before	ADP
ap-850	63	63	a	a	DET
ap-850	63	64	final	final	ADJ
ap-850	63	65	decrease	decrease	NOUN
ap-850	63	66	.	.	PUNCT
ap-850	64	1	diode	diode	NOUN
ap-850	64	2	factor	factor	NOUN
ap-850	64	3	�	�	PROPN
ap-850	64	4	2	2	NUM
ap-850	64	5	showed	show	VERB
ap-850	64	6	a	a	DET
ap-850	64	7	decrease	decrease	NOUN
ap-850	64	8	with	with	ADP
ap-850	64	9	temperature	temperature	NOUN
ap-850	64	10	growth	growth	NOUN
ap-850	64	11	(	(	PUNCT
ap-850	64	12	fig	fig	NOUN
ap-850	64	13	.	.	PUNCT
ap-850	64	14	2	2	NUM
ap-850	64	15	)	)	PUNCT
ap-850	64	16	.	.	PUNCT
ap-850	65	1	in	in	ADP
ap-850	65	2	some	some	DET
ap-850	65	3	cases	case	NOUN
ap-850	65	4	,	,	PUNCT
ap-850	65	5	however	however	ADV
ap-850	65	6	,	,	PUNCT
ap-850	65	7	this	this	DET
ap-850	65	8	dependence	dependence	NOUN
ap-850	65	9	was	be	AUX
ap-850	65	10	not	not	PART
ap-850	65	11	very	very	ADV
ap-850	65	12	clearly	clearly	ADV
ap-850	65	13	confirmed	confirm	VERB
ap-850	65	14	(	(	PUNCT
ap-850	65	15	e.g.	e.g.	ADV
ap-850	65	16	,	,	PUNCT
ap-850	65	17	sample	sample	NOUN
ap-850	65	18	#	#	SYM
ap-850	65	19	20	20	NUM
ap-850	65	20	)	)	PUNCT
ap-850	65	21	.	.	PUNCT
ap-850	66	1	diode	diode	NOUN
ap-850	66	2	factors	factor	NOUN
ap-850	66	3	�	�	X
ap-850	66	4	2	2	NUM
ap-850	66	5	have	have	VERB
ap-850	66	6	to	to	PART
ap-850	66	7	be	be	AUX
ap-850	66	8	extracted	extract	VERB
ap-850	66	9	,	,	PUNCT
ap-850	66	10	so	so	SCONJ
ap-850	66	11	that	that	SCONJ
ap-850	66	12	the	the	DET
ap-850	66	13	g	g	NOUN
ap-850	66	14	-	-	PUNCT
ap-850	66	15	r	r	NOUN
ap-850	66	16	current	current	ADJ
ap-850	66	17	density	density	NOUN
ap-850	66	18	i02	i02	NOUN
ap-850	66	19	can	can	AUX
ap-850	66	20	be	be	AUX
ap-850	66	21	evaluated	evaluate	VERB
ap-850	66	22	more	more	ADV
ap-850	66	23	precisely	precisely	ADV
ap-850	66	24	.	.	PUNCT
ap-850	67	1	the	the	DET
ap-850	67	2	hyperbolic	hyperbolic	ADJ
ap-850	67	3	logarithm	logarithm	NOUN
ap-850	67	4	of	of	ADP
ap-850	67	5	the	the	DET
ap-850	67	6	g	g	NOUN
ap-850	67	7	-	-	PUNCT
ap-850	67	8	r	r	NOUN
ap-850	67	9	current	current	ADJ
ap-850	67	10	density	density	NOUN
ap-850	67	11	as	as	ADP
ap-850	67	12	a	a	DET
ap-850	67	13	function	function	NOUN
ap-850	67	14	of	of	ADP
ap-850	67	15	temperature	temperature	NOUN
ap-850	67	16	is	be	AUX
ap-850	67	17	shown	show	VERB
ap-850	67	18	in	in	ADP
ap-850	67	19	fig	fig	NOUN
ap-850	67	20	.	.	PUNCT
ap-850	68	1	3	3	X
ap-850	68	2	.	.	X
ap-850	69	1	the	the	DET
ap-850	69	2	dependence	dependence	NOUN
ap-850	69	3	is	be	AUX
ap-850	69	4	almost	almost	ADV
ap-850	69	5	linear	linear	ADJ
ap-850	69	6	.	.	PUNCT
ap-850	70	1	for	for	ADP
ap-850	70	2	the	the	DET
ap-850	70	3	lowest	low	ADJ
ap-850	70	4	trapping	trap	VERB
ap-850	70	5	/	/	SYM
ap-850	70	6	generation	generation	NOUN
ap-850	70	7	effect	effect	NOUN
ap-850	70	8	,	,	PUNCT
ap-850	70	9	this	this	DET
ap-850	70	10	dependence	dependence	NOUN
ap-850	70	11	should	should	AUX
ap-850	70	12	be	be	AUX
ap-850	70	13	weak	weak	ADJ
ap-850	70	14	.	.	PUNCT
ap-850	71	1	this	this	PRON
ap-850	71	2	is	be	AUX
ap-850	71	3	shown	show	VERB
ap-850	71	4	in	in	ADP
ap-850	71	5	fig	fig	NOUN
ap-850	71	6	.	.	PUNCT
ap-850	72	1	3	3	NUM
ap-850	72	2	for	for	ADP
ap-850	72	3	sample	sample	PROPN
ap-850	72	4	le2	le2	PROPN
ap-850	72	5	,	,	PUNCT
ap-850	72	6	thus	thus	ADV
ap-850	72	7	confirming	confirm	VERB
ap-850	72	8	its	its	PRON
ap-850	72	9	quality	quality	NOUN
ap-850	72	10	from	from	ADP
ap-850	72	11	the	the	DET
ap-850	72	12	shunt	shunt	NOUN
ap-850	72	13	resistance	resistance	NOUN
ap-850	72	14	measurement	measurement	NOUN
ap-850	72	15	.	.	PUNCT
ap-850	73	1	the	the	DET
ap-850	73	2	preceding	precede	VERB
ap-850	73	3	extracted	extract	VERB
ap-850	73	4	parameters	parameter	NOUN
ap-850	73	5	and	and	CCONJ
ap-850	73	6	the	the	DET
ap-850	73	7	obtained	obtain	VERB
ap-850	73	8	dependences	dependence	NOUN
ap-850	73	9	were	be	AUX
ap-850	73	10	used	use	VERB
ap-850	73	11	for	for	ADP
ap-850	73	12	evaluating	evaluate	VERB
ap-850	73	13	the	the	DET
ap-850	73	14	energy	energy	NOUN
ap-850	73	15	levels	level	NOUN
ap-850	73	16	of	of	ADP
ap-850	73	17	the	the	DET
ap-850	73	18	g	g	NOUN
ap-850	73	19	-	-	PUNCT
ap-850	73	20	r	r	NOUN
ap-850	73	21	centers	center	NOUN
ap-850	73	22	and	and	CCONJ
ap-850	73	23	their	their	PRON
ap-850	73	24	densities	density	NOUN
ap-850	73	25	and	and	CCONJ
ap-850	73	26	the	the	DET
ap-850	73	27	lifetime	lifetime	NOUN
ap-850	73	28	of	of	ADP
ap-850	73	29	the	the	DET
ap-850	73	30	excess	excess	ADJ
ap-850	73	31	charge	charge	NOUN
ap-850	73	32	carriers	carrier	NOUN
ap-850	73	33	in	in	ADP
ap-850	73	34	the	the	DET
ap-850	73	35	space	space	NOUN
ap-850	73	36	charge	charge	NOUN
ap-850	73	37	region	region	NOUN
ap-850	73	38	.	.	PUNCT
ap-850	74	1	these	these	DET
ap-850	74	2	parameters	parameter	NOUN
ap-850	74	3	are	be	AUX
ap-850	74	4	shown	show	VERB
ap-850	74	5	in	in	ADP
ap-850	74	6	tables	table	NOUN
ap-850	74	7	1	1	NUM
ap-850	74	8	and	and	CCONJ
ap-850	74	9	2	2	NUM
ap-850	74	10	for	for	ADP
ap-850	74	11	each	each	DET
ap-850	74	12	sample	sample	NOUN
ap-850	74	13	.	.	PUNCT
ap-850	75	1	comparing	compare	VERB
ap-850	75	2	values	value	NOUN
ap-850	75	3	of	of	ADP
ap-850	75	4	the	the	DET
ap-850	75	5	deep	deep	ADJ
ap-850	75	6	energy	energy	NOUN
ap-850	75	7	levels	level	NOUN
ap-850	75	8	with	with	ADP
ap-850	75	9	measured	measured	ADJ
ap-850	75	10	efficiencies	efficiency	NOUN
ap-850	75	11	,	,	PUNCT
ap-850	75	12	we	we	PRON
ap-850	75	13	can	can	AUX
ap-850	75	14	evaluate	evaluate	VERB
ap-850	75	15	the	the	DET
ap-850	75	16	influence	influence	NOUN
ap-850	75	17	of	of	ADP
ap-850	75	18	these	these	DET
ap-850	75	19	levels	level	NOUN
ap-850	75	20	.	.	PUNCT
ap-850	76	1	the	the	DET
ap-850	76	2	samples	sample	NOUN
ap-850	76	3	of	of	ADP
ap-850	76	4	series	series	NOUN
ap-850	76	5	le	le	ADP
ap-850	76	6	#	#	NOUN
ap-850	76	7	have	have	VERB
ap-850	76	8	almost	almost	ADV
ap-850	76	9	the	the	DET
ap-850	76	10	same	same	ADJ
ap-850	76	11	levels	level	NOUN
ap-850	76	12	and	and	CCONJ
ap-850	76	13	lifetimes	lifetime	NOUN
ap-850	76	14	,	,	PUNCT
ap-850	76	15	and	and	CCONJ
ap-850	76	16	also	also	ADV
ap-850	76	17	their	their	PRON
ap-850	76	18	efficiencies	efficiency	NOUN
ap-850	76	19	are	be	AUX
ap-850	76	20	similar	similar	ADJ
ap-850	76	21	.	.	PUNCT
ap-850	77	1	the	the	DET
ap-850	77	2	same	same	ADJ
ap-850	77	3	can	can	AUX
ap-850	77	4	be	be	AUX
ap-850	77	5	said	say	VERB
ap-850	77	6	about	about	ADP
ap-850	77	7	samples	sample	NOUN
ap-850	77	8	1942	1942	NUM
ap-850	77	9	-	-	SYM
ap-850	77	10	02	02	NUM
ap-850	77	11	and	and	CCONJ
ap-850	77	12	1940	1940	NUM
ap-850	77	13	-	-	SYM
ap-850	77	14	24	24	NUM
ap-850	77	15	.	.	PUNCT
ap-850	78	1	although	although	SCONJ
ap-850	78	2	the	the	DET
ap-850	78	3	deep	deep	ADJ
ap-850	78	4	energy	energy	NOUN
ap-850	78	5	levels	level	NOUN
ap-850	78	6	in	in	ADP
ap-850	78	7	these	these	DET
ap-850	78	8	two	two	NUM
ap-850	78	9	batches	batch	NOUN
ap-850	78	10	are	be	AUX
ap-850	78	11	different	different	ADJ
ap-850	78	12	,	,	PUNCT
ap-850	78	13	their	their	PRON
ap-850	78	14	influences	influence	NOUN
ap-850	78	15	are	be	AUX
ap-850	78	16	nearly	nearly	ADV
ap-850	78	17	identical	identical	ADJ
ap-850	78	18	.	.	PUNCT
ap-850	79	1	on	on	ADP
ap-850	79	2	the	the	DET
ap-850	79	3	other	other	ADJ
ap-850	79	4	hand	hand	NOUN
ap-850	79	5	,	,	PUNCT
ap-850	79	6	samples	sample	VERB
ap-850	79	7	#	#	SYM
ap-850	79	8	10	10	NUM
ap-850	79	9	,	,	PUNCT
ap-850	79	10	20	20	NUM
ap-850	79	11	and	and	CCONJ
ap-850	79	12	22	22	NUM
ap-850	79	13	show	show	VERB
ap-850	79	14	some	some	DET
ap-850	79	15	inhomogeneities	inhomogeneity	NOUN
ap-850	79	16	in	in	ADP
ap-850	79	17	the	the	DET
ap-850	79	18	deep	deep	ADJ
ap-850	79	19	level	level	NOUN
ap-850	79	20	energy	energy	NOUN
ap-850	79	21	and	and	CCONJ
ap-850	79	22	the	the	DET
ap-850	79	23	lifetime	lifetime	NOUN
ap-850	79	24	in	in	ADP
ap-850	79	25	the	the	DET
ap-850	79	26	space	space	NOUN
ap-850	79	27	-	-	PUNCT
ap-850	79	28	charge	charge	NOUN
ap-850	79	29	region	region	NOUN
ap-850	79	30	.	.	PUNCT
ap-850	80	1	in	in	ADP
ap-850	80	2	sample	sample	NOUN
ap-850	80	3	1x-0883	1x-0883	NUM
ap-850	80	4	a	a	DET
ap-850	80	5	very	very	ADV
ap-850	80	6	deep	deep	ADJ
ap-850	80	7	level	level	NOUN
ap-850	80	8	was	be	AUX
ap-850	80	9	found	find	VERB
ap-850	80	10	and	and	CCONJ
ap-850	80	11	the	the	DET
ap-850	80	12	lowest	low	ADJ
ap-850	80	13	efficiency	efficiency	NOUN
ap-850	80	14	was	be	AUX
ap-850	80	15	measured	measure	VERB
ap-850	80	16	.	.	PUNCT
ap-850	81	1	other	other	ADJ
ap-850	81	2	parameters	parameter	NOUN
ap-850	81	3	of	of	ADP
ap-850	81	4	the	the	DET
ap-850	81	5	measured	measured	ADJ
ap-850	81	6	solar	solar	ADJ
ap-850	81	7	cells	cell	NOUN
ap-850	81	8	,	,	PUNCT
ap-850	81	9	e.g.	e.g.	ADV
ap-850	81	10	,	,	PUNCT
ap-850	81	11	surface	surface	NOUN
ap-850	81	12	recombination	recombination	NOUN
ap-850	81	13	velocity	velocity	NOUN
ap-850	81	14	and	and	CCONJ
ap-850	81	15	series	series	NOUN
ap-850	81	16	resistance	resistance	NOUN
ap-850	81	17	,	,	PUNCT
ap-850	81	18	need	need	VERB
ap-850	81	19	to	to	PART
ap-850	81	20	be	be	AUX
ap-850	81	21	determined	determine	VERB
ap-850	81	22	for	for	ADP
ap-850	81	23	a	a	DET
ap-850	81	24	more	more	ADV
ap-850	81	25	precise	precise	ADJ
ap-850	81	26	evaluation	evaluation	NOUN
ap-850	81	27	of	of	ADP
ap-850	81	28	the	the	DET
ap-850	81	29	influence	influence	NOUN
ap-850	81	30	of	of	ADP
ap-850	81	31	deep	deep	ADJ
ap-850	81	32	level	level	NOUN
ap-850	81	33	influence	influence	NOUN
ap-850	81	34	on	on	ADP
ap-850	81	35	efficiency	efficiency	NOUN
ap-850	81	36	.	.	PUNCT
ap-850	82	1	determining	determine	VERB
ap-850	82	2	the	the	DET
ap-850	82	3	formers	former	NOUN
ap-850	82	4	of	of	ADP
ap-850	82	5	the	the	DET
ap-850	82	6	deep	deep	ADJ
ap-850	82	7	levels	level	NOUN
ap-850	82	8	,	,	PUNCT
ap-850	82	9	the	the	DET
ap-850	82	10	most	most	ADV
ap-850	82	11	probable	probable	ADJ
ap-850	82	12	lattice	lattice	NOUN
ap-850	82	13	imperfections	imperfection	NOUN
ap-850	82	14	creating	create	VERB
ap-850	82	15	deep	deep	ADJ
ap-850	82	16	levels	level	NOUN
ap-850	82	17	in	in	ADP
ap-850	82	18	the	the	DET
ap-850	82	19	range	range	NOUN
ap-850	82	20	from	from	ADP
ap-850	82	21	0.2	0.2	NUM
ap-850	82	22	to	to	ADP
ap-850	82	23	0.37	0.37	NUM
ap-850	82	24	ev	ev	NOUN
ap-850	82	25	below	below	ADP
ap-850	82	26	the	the	DET
ap-850	82	27	conduction	conduction	NOUN
ap-850	82	28	band	band	NOUN
ap-850	82	29	(	(	PUNCT
ap-850	82	30	or	or	CCONJ
ap-850	82	31	above	above	ADP
ap-850	82	32	the	the	DET
ap-850	82	33	valence	valence	NOUN
ap-850	82	34	band	band	NOUN
ap-850	82	35	)	)	PUNCT
ap-850	82	36	,	,	PUNCT
ap-850	82	37	are	be	AUX
ap-850	82	38	bounded	bound	VERB
ap-850	82	39	with	with	ADP
ap-850	82	40	boron	boron	NOUN
ap-850	82	41	,	,	PUNCT
ap-850	82	42	carbon	carbon	NOUN
ap-850	82	43	and	and	CCONJ
ap-850	82	44	oxygen	oxygen	NOUN
ap-850	82	45	atoms	atom	NOUN
ap-850	82	46	,	,	PUNCT
ap-850	82	47	e.g.	e.g.	ADV
ap-850	82	48	bics	bic	NOUN
ap-850	82	49	�	�	PROPN
ap-850	82	50	0.29	0.29	NUM
ap-850	82	51	ev	ev	PROPN
ap-850	82	52	,	,	PUNCT
ap-850	82	53	bi	bi	PROPN
ap-850	82	54	�	�	PROPN
ap-850	82	55	0.37	0.37	NUM
ap-850	82	56	ev	ev	NOUN
ap-850	82	57	and	and	CCONJ
ap-850	82	58	bioi	bioi	PROPN
ap-850	82	59	�	�	PROPN
ap-850	82	60	0.20	0.20	NUM
ap-850	82	61	ev	ev	NOUN
ap-850	82	62	[	[	X
ap-850	82	63	2	2	NUM
ap-850	82	64	]	]	PUNCT
ap-850	82	65	.	.	PUNCT
ap-850	83	1	here	here	ADV
ap-850	83	2	‘	'	PUNCT
ap-850	83	3	�	�	NOUN
ap-850	83	4	’	'	PUNCT
ap-850	83	5	means	mean	VERB
ap-850	83	6	energy	energy	NOUN
ap-850	83	7	above	above	ADP
ap-850	83	8	the	the	DET
ap-850	83	9	valence	valence	NOUN
ap-850	83	10	band	band	NOUN
ap-850	83	11	and	and	CCONJ
ap-850	83	12	‘	'	PUNCT
ap-850	83	13	�	�	NOUN
ap-850	83	14	‘	'	PUNCT
ap-850	83	15	means	mean	NOUN
ap-850	83	16	below	below	ADP
ap-850	83	17	the	the	DET
ap-850	83	18	conduction	conduction	NOUN
ap-850	83	19	band	band	NOUN
ap-850	83	20	.	.	PUNCT
ap-850	84	1	the	the	DET
ap-850	84	2	deep	deep	ADJ
ap-850	84	3	levels	level	NOUN
ap-850	84	4	found	find	VERB
ap-850	84	5	in	in	ADP
ap-850	84	6	samples	sample	NOUN
ap-850	84	7	#	#	SYM
ap-850	84	8	10	10	NUM
ap-850	84	9	,	,	PUNCT
ap-850	84	10	20	20	NUM
ap-850	84	11	and	and	CCONJ
ap-850	84	12	22	22	NUM
ap-850	84	13	may	may	AUX
ap-850	84	14	have	have	AUX
ap-850	84	15	been	be	AUX
ap-850	84	16	caused	cause	VERB
ap-850	84	17	by	by	ADP
ap-850	84	18	some	some	DET
ap-850	84	19	special	special	ADJ
ap-850	84	20	treatment	treatment	NOUN
ap-850	84	21	of	of	ADP
ap-850	84	22	these	these	DET
ap-850	84	23	samples	sample	NOUN
ap-850	84	24	,	,	PUNCT
ap-850	84	25	e.g.	e.g.	ADV
ap-850	84	26	electron	electron	NOUN
ap-850	84	27	bombardment	bombardment	NOUN
ap-850	84	28	,	,	PUNCT
ap-850	84	29	which	which	PRON
ap-850	84	30	induces	induce	VERB
ap-850	84	31	vacancy	vacancy	NOUN
ap-850	84	32	-	-	PUNCT
ap-850	84	33	related	relate	VERB
ap-850	84	34	defects	defect	NOUN
ap-850	84	35	like	like	ADP
ap-850	84	36	vo	vo	PROPN
ap-850	84	37	�	�	PROPN
ap-850	84	38	0.18	0.18	NUM
ap-850	84	39	ev	ev	PROPN
ap-850	84	40	,	,	PUNCT
ap-850	84	41	or	or	CCONJ
ap-850	84	42	carbon	carbon	NOUN
ap-850	84	43	related	relate	VERB
ap-850	84	44	defects	defect	NOUN
ap-850	84	45	like	like	ADP
ap-850	84	46	cics	cic	NOUN
ap-850	84	47	�	�	PROPN
ap-850	84	48	0.11	0.11	NUM
ap-850	84	49	ev	ev	NOUN
ap-850	85	1	[	[	X
ap-850	85	2	1	1	NUM
ap-850	85	3	,	,	PUNCT
ap-850	85	4	3	3	NUM
ap-850	85	5	]	]	PUNCT
ap-850	85	6	.	.	PUNCT
ap-850	86	1	of	of	ADP
ap-850	86	2	course	course	NOUN
ap-850	86	3	there	there	PRON
ap-850	86	4	may	may	AUX
ap-850	86	5	be	be	AUX
ap-850	86	6	some	some	DET
ap-850	86	7	other	other	ADJ
ap-850	86	8	explanation	explanation	NOUN
ap-850	86	9	in	in	ADP
ap-850	86	10	each	each	DET
ap-850	86	11	sample	sample	NOUN
ap-850	86	12	of	of	ADP
ap-850	86	13	electrical	electrical	ADJ
ap-850	86	14	behavior	behavior	NOUN
ap-850	86	15	,	,	PUNCT
ap-850	86	16	namely	namely	ADV
ap-850	86	17	the	the	DET
ap-850	86	18	inherence	inherence	NOUN
ap-850	86	19	of	of	ADP
ap-850	86	20	two	two	NUM
ap-850	86	21	or	or	CCONJ
ap-850	86	22	more	more	ADJ
ap-850	86	23	energy	energy	NOUN
ap-850	86	24	levels	level	NOUN
ap-850	86	25	deep	deep	ADV
ap-850	86	26	within	within	ADP
ap-850	86	27	the	the	DET
ap-850	86	28	band	band	NOUN
ap-850	86	29	gap	gap	NOUN
ap-850	86	30	.	.	PUNCT
ap-850	87	1	this	this	DET
ap-850	87	2	simple	simple	ADJ
ap-850	87	3	technique	technique	NOUN
ap-850	87	4	can	can	AUX
ap-850	87	5	not	not	PART
ap-850	87	6	give	give	VERB
ap-850	87	7	the	the	DET
ap-850	87	8	exact	exact	ADJ
ap-850	87	9	parameters	parameter	NOUN
ap-850	87	10	of	of	ADP
ap-850	87	11	these	these	DET
ap-850	87	12	centers	center	NOUN
ap-850	87	13	,	,	PUNCT
ap-850	87	14	for	for	ADP
ap-850	87	15	reasons	reason	NOUN
ap-850	87	16	mentioned	mention	VERB
ap-850	87	17	above	above	ADV
ap-850	87	18	.	.	PUNCT
ap-850	88	1	6	6	NUM
ap-850	88	2	conclusion	conclusion	NOUN
ap-850	88	3	a	a	DET
ap-850	88	4	proper	proper	ADJ
ap-850	88	5	characterization	characterization	NOUN
ap-850	88	6	of	of	ADP
ap-850	88	7	the	the	DET
ap-850	88	8	charge	charge	NOUN
ap-850	88	9	carrier	carrier	NOUN
ap-850	88	10	lifetime	lifetime	NOUN
ap-850	88	11	and	and	CCONJ
ap-850	88	12	the	the	DET
ap-850	88	13	extracting	extract	VERB
ap-850	88	14	parameters	parameter	NOUN
ap-850	88	15	of	of	ADP
ap-850	88	16	g	g	NOUN
ap-850	88	17	-	-	PUNCT
ap-850	88	18	r	r	NOUN
ap-850	88	19	centers	center	NOUN
ap-850	88	20	is	be	AUX
ap-850	88	21	very	very	ADV
ap-850	88	22	useful	useful	ADJ
ap-850	88	23	for	for	ADP
ap-850	88	24	solar	solar	ADJ
ap-850	88	25	cell	cell	NOUN
ap-850	88	26	utilization	utilization	NOUN
ap-850	88	27	.	.	PUNCT
ap-850	89	1	and	and	CCONJ
ap-850	89	2	will	will	AUX
ap-850	89	3	play	play	VERB
ap-850	89	4	a	a	DET
ap-850	89	5	key	key	ADJ
ap-850	89	6	role	role	NOUN
ap-850	89	7	in	in	ADP
ap-850	89	8	their	their	PRON
ap-850	89	9	future	future	ADJ
ap-850	89	10	development	development	NOUN
ap-850	89	11	.	.	PUNCT
ap-850	90	1	although	although	SCONJ
ap-850	90	2	the	the	DET
ap-850	90	3	method	method	NOUN
ap-850	90	4	of	of	ADP
ap-850	90	5	dark	dark	ADJ
ap-850	90	6	forward	forward	PROPN
ap-850	90	7	characteristics	characteristic	NOUN
ap-850	90	8	has	have	VERB
ap-850	90	9	some	some	DET
ap-850	90	10	limitations	limitation	NOUN
ap-850	90	11	.	.	PUNCT
ap-850	91	1	as	as	SCONJ
ap-850	91	2	mentioned	mention	VERB
ap-850	91	3	in	in	ADP
ap-850	91	4	the	the	DET
ap-850	91	5	text	text	NOUN
ap-850	91	6	,	,	PUNCT
ap-850	91	7	this	this	DET
ap-850	91	8	method	method	NOUN
ap-850	91	9	is	be	AUX
ap-850	91	10	very	very	ADV
ap-850	91	11	fast	fast	ADJ
ap-850	91	12	,	,	PUNCT
ap-850	91	13	non	non	ADJ
ap-850	91	14	-	-	ADJ
ap-850	91	15	destructive	destructive	ADJ
ap-850	91	16	and	and	CCONJ
ap-850	91	17	simple	simple	ADJ
ap-850	91	18	,	,	PUNCT
ap-850	91	19	and	and	CCONJ
ap-850	91	20	can	can	AUX
ap-850	91	21	be	be	AUX
ap-850	91	22	used	use	VERB
ap-850	91	23	together	together	ADV
ap-850	91	24	with	with	ADP
ap-850	91	25	other	other	ADJ
ap-850	91	26	methods	method	NOUN
ap-850	91	27	as	as	ADP
ap-850	91	28	a	a	DET
ap-850	91	29	diagnostic	diagnostic	ADJ
ap-850	91	30	tool	tool	NOUN
ap-850	91	31	in	in	ADP
ap-850	91	32	the	the	DET
ap-850	91	33	development	development	NOUN
ap-850	91	34	and	and	CCONJ
ap-850	91	35	production	production	NOUN
ap-850	91	36	of	of	ADP
ap-850	91	37	solar	solar	ADJ
ap-850	91	38	cells	cell	NOUN
ap-850	91	39	.	.	PUNCT
ap-850	92	1	7	7	NUM
ap-850	92	2	acknowledgments	acknowledgment	NOUN
ap-850	92	3	research	research	NOUN
ap-850	92	4	described	describe	VERB
ap-850	92	5	in	in	ADP
ap-850	92	6	the	the	DET
ap-850	92	7	paper	paper	NOUN
ap-850	92	8	was	be	AUX
ap-850	92	9	supervised	supervise	VERB
ap-850	92	10	by	by	ADP
ap-850	92	11	prof	prof	NOUN
ap-850	92	12	.	.	PUNCT
ap-850	93	1	v.	v.	PROPN
ap-850	93	2	benda	benda	PROPN
ap-850	93	3	,	,	PUNCT
ap-850	93	4	fee	fee	NOUN
ap-850	93	5	ctu	ctu	NOUN
ap-850	93	6	in	in	ADP
ap-850	93	7	prague	prague	PROPN
ap-850	93	8	,	,	PUNCT
ap-850	93	9	department	department	NOUN
ap-850	93	10	of	of	ADP
ap-850	93	11	electrical	electrical	ADJ
ap-850	93	12	technology	technology	NOUN
ap-850	93	13	.	.	PUNCT
ap-850	94	1	references	reference	NOUN
ap-850	94	2	[	[	X
ap-850	94	3	1	1	X
ap-850	94	4	]	]	PUNCT
ap-850	94	5	tran	tran	PROPN
ap-850	94	6	hung	hung	PROPN
ap-850	94	7	quan	quan	PROPN
ap-850	94	8	:	:	PUNCT
ap-850	94	9	diagnostics	diagnostic	NOUN
ap-850	94	10	of	of	ADP
ap-850	94	11	large	large	ADJ
ap-850	94	12	area	area	NOUN
ap-850	94	13	crystalline	crystalline	ADJ
ap-850	94	14	solar	solar	ADJ
ap-850	94	15	cells	cell	NOUN
ap-850	94	16	.	.	PUNCT
ap-850	95	1	2003	2003	NUM
ap-850	96	1	[	[	X
ap-850	96	2	2	2	NUM
ap-850	96	3	]	]	PUNCT
ap-850	96	4	adey	adey	NOUN
ap-850	96	5	,	,	PUNCT
ap-850	96	6	j.	j.	PROPN
ap-850	96	7	,	,	PUNCT
ap-850	96	8	jones	jones	PROPN
ap-850	96	9	,	,	PUNCT
ap-850	96	10	r.	r.	PROPN
ap-850	96	11	,	,	PUNCT
ap-850	96	12	briddon	briddon	ADJ
ap-850	96	13	,	,	PUNCT
ap-850	96	14	p.	p.	PROPN
ap-850	96	15	r.	r.	PROPN
ap-850	96	16	,	,	PUNCT
ap-850	96	17	goss	goss	PROPN
ap-850	96	18	,	,	PUNCT
ap-850	96	19	j.	j.	PROPN
ap-850	96	20	p.	p.	PROPN
ap-850	96	21	:	:	PUNCT
ap-850	96	22	optical	optical	ADJ
ap-850	96	23	and	and	CCONJ
ap-850	96	24	electrical	electrical	ADJ
ap-850	96	25	activity	activity	NOUN
ap-850	96	26	of	of	ADP
ap-850	96	27	boron	boron	NOUN
ap-850	96	28	interstitial	interstitial	ADJ
ap-850	96	29	defects	defect	NOUN
ap-850	96	30	in	in	ADP
ap-850	96	31	si	si	PROPN
ap-850	96	32	.	.	PUNCT
ap-850	96	33	j.	j.	PROPN
ap-850	96	34	phys	phys	PROPN
ap-850	96	35	.	.	PUNCT
ap-850	96	36	:	:	PUNCT
ap-850	97	1	condens	conden	NOUN
ap-850	97	2	.	.	PUNCT
ap-850	98	1	matter	matter	NOUN
ap-850	98	2	,	,	PUNCT
ap-850	98	3	vol	vol	NOUN
ap-850	98	4	.	.	PROPN
ap-850	98	5	15	15	NUM
ap-850	98	6	(	(	PUNCT
ap-850	98	7	2003	2003	NUM
ap-850	98	8	)	)	PUNCT
ap-850	98	9	s2851	s2851	NOUN
ap-850	98	10	–	–	PUNCT
ap-850	98	11	s2858	s2858	NOUN
ap-850	98	12	pii	pii	NOUN
ap-850	99	1	[	[	X
ap-850	99	2	3	3	NUM
ap-850	99	3	]	]	X
ap-850	99	4	schroder	schroder	NOUN
ap-850	99	5	,	,	PUNCT
ap-850	99	6	d.	d.	PROPN
ap-850	99	7	k.	k.	PROPN
ap-850	99	8	:	:	PUNCT
ap-850	99	9	semiconductor	semiconductor	NOUN
ap-850	99	10	material	material	NOUN
ap-850	99	11	and	and	CCONJ
ap-850	99	12	device	device	NOUN
ap-850	99	13	characterization	characterization	NOUN
ap-850	99	14	.	.	PUNCT
ap-850	100	1	john	john	PROPN
ap-850	100	2	wiley	wiley	PROPN
ap-850	100	3	&	&	CCONJ
ap-850	100	4	sons	sons	PROPN
ap-850	100	5	.	.	PUNCT
ap-850	100	6	inc	inc	PROPN
ap-850	100	7	.	.	PROPN
ap-850	100	8	,	,	PUNCT
ap-850	100	9	new	new	PROPN
ap-850	100	10	york	york	PROPN
ap-850	100	11	,	,	PUNCT
ap-850	100	12	1990	1990	NUM
ap-850	100	13	ing	ing	NOUN
ap-850	100	14	.	.	PUNCT
ap-850	101	1	jan	jan	PROPN
ap-850	101	2	salinger	salinger	PROPN
ap-850	101	3	e	e	PROPN
ap-850	101	4	-	-	NOUN
ap-850	101	5	mail	mail	NOUN
ap-850	101	6	:	:	PUNCT
ap-850	101	7	salinj1@feld.cvut.cz	salinj1@feld.cvut.cz	PROPN
ap-850	101	8	department	department	NOUN
ap-850	101	9	of	of	ADP
ap-850	101	10	electrical	electrical	ADJ
ap-850	101	11	technology	technology	NOUN
ap-850	101	12	czech	czech	PROPN
ap-850	101	13	technical	technical	PROPN
ap-850	101	14	university	university	PROPN
ap-850	101	15	in	in	ADP
ap-850	101	16	prague	prague	PROPN
ap-850	101	17	faculty	faculty	NOUN
ap-850	101	18	of	of	ADP
ap-850	101	19	electrical	electrical	ADJ
ap-850	101	20	engineering	engineering	NOUN
ap-850	101	21	technická	technická	NOUN
ap-850	101	22	2	2	NUM
ap-850	101	23	166	166	NUM
ap-850	101	24	27	27	NUM
ap-850	101	25	praha	praha	NOUN
ap-850	101	26	,	,	PUNCT
ap-850	101	27	czech	czech	PROPN
ap-850	101	28	republic	republic	NOUN
ap-850	101	29	©	©	PROPN
ap-850	101	30	czech	czech	PROPN
ap-850	101	31	technical	technical	PROPN
ap-850	101	32	university	university	PROPN
ap-850	101	33	publishing	publishing	NOUN
ap-850	101	34	house	house	NOUN
ap-850	101	35	http://ctn.cvut.cz/ap/	http://ctn.cvut.cz/ap/	PROPN
ap-850	101	36	27	27	NUM
ap-850	101	37	acta	acta	PROPN
ap-850	101	38	polytechnica	polytechnica	PROPN
ap-850	101	39	vol	vol	NOUN
ap-850	101	40	.	.	PUNCT
ap-850	102	1	46	46	NUM
ap-850	102	2	no	no	INTJ
ap-850	102	3	.	.	PUNCT
ap-850	103	1	4/2006	4/2006	NUM
ap-850	103	2	sample	sample	NOUN
ap-850	103	3	#	#	NOUN
ap-850	103	4	�	�	NOUN
ap-850	103	5	wt	wt	PROPN
ap-850	103	6	[	[	X
ap-850	103	7	ev	ev	X
ap-850	103	8	]	]	X
ap-850	103	9	wt1	wt1	NOUN
ap-850	103	10	[	[	X
ap-850	103	11	ev	ev	X
ap-850	103	12	]	]	X
ap-850	103	13	wt2	wt2	NOUN
ap-850	104	1	[	[	X
ap-850	104	2	ev	ev	X
ap-850	104	3	]	]	X
ap-850	104	4	10	10	NUM
ap-850	104	5	0.438	0.438	NUM
ap-850	104	6	0.122	0.122	NUM
ap-850	104	7	0.998	0.998	NUM
ap-850	104	8	20	20	NUM
ap-850	104	9	0.373	0.373	NUM
ap-850	104	10	0.187	0.187	NUM
ap-850	104	11	0.933	0.933	NUM
ap-850	104	12	22	22	NUM
ap-850	104	13	0.341	0.341	NUM
ap-850	104	14	0.219	0.219	NUM
ap-850	104	15	0.901	0.901	NUM
ap-850	104	16	1942	1942	NUM
ap-850	104	17	-	-	SYM
ap-850	104	18	02	02	NUM
ap-850	104	19	0.351	0.351	NUM
ap-850	104	20	0.209	0.209	NUM
ap-850	104	21	0.911	0.911	NUM
ap-850	104	22	1940	1940	NUM
ap-850	104	23	-	-	SYM
ap-850	104	24	24	24	NUM
ap-850	105	1	0.360	0.360	NUM
ap-850	105	2	0.200	0.200	NUM
ap-850	105	3	0.920	0.920	NUM
ap-850	105	4	1x-0883	1x-0883	NUM
ap-850	105	5	0.201	0.201	NUM
ap-850	105	6	0.359	0.359	NUM
ap-850	105	7	0.761	0.761	NUM
ap-850	105	8	le1	le1	NUM
ap-850	105	9	0.248	0.248	NUM
ap-850	105	10	0.312	0.312	NUM
ap-850	105	11	0.808	0.808	NUM
ap-850	105	12	le2	le2	NOUN
ap-850	105	13	0.212	0.212	NUM
ap-850	105	14	0.348	0.348	NUM
ap-850	105	15	0.772	0.772	NUM
ap-850	105	16	le5	le5	VERB
ap-850	105	17	0.224	0.224	NUM
ap-850	105	18	0.336	0.336	NUM
ap-850	105	19	0.784	0.784	NUM
ap-850	105	20	table	table	NOUN
ap-850	105	21	1	1	NUM
ap-850	105	22	:	:	PUNCT
ap-850	106	1	possible	possible	ADJ
ap-850	106	2	energy	energy	NOUN
ap-850	106	3	levels	level	NOUN
ap-850	106	4	found	find	VERB
ap-850	106	5	in	in	ADP
ap-850	106	6	selected	select	VERB
ap-850	106	7	samples	sample	NOUN
ap-850	106	8	sample	sample	NOUN
ap-850	106	9	#	#	PROPN
ap-850	106	10	�	�	PROPN
ap-850	106	11	sc	sc	PROPN
ap-850	106	12	(	(	PUNCT
ap-850	106	13	295	295	NUM
ap-850	106	14	k	k	NOUN
ap-850	106	15	)	)	PUNCT
ap-850	107	1	[	[	X
ap-850	107	2	s	s	X
ap-850	107	3	]	]	X
ap-850	107	4	efficiency	efficiency	NOUN
ap-850	108	1	[	[	X
ap-850	108	2	%	%	X
ap-850	108	3	]	]	X
ap-850	108	4	10	10	NUM
ap-850	108	5	2.05×10	2.05×10	NUM
ap-850	108	6	�	�	PROPN
ap-850	108	7	8	8	NUM
ap-850	108	8	14.29	14.29	NUM
ap-850	108	9	20	20	NUM
ap-850	108	10	8.00×10	8.00×10	NUM
ap-850	108	11	�	�	NOUN
ap-850	108	12	8	8	NUM
ap-850	108	13	13.43	13.43	NUM
ap-850	108	14	22	22	NUM
ap-850	108	15	1.83×10	1.83×10	NUM
ap-850	108	16	�	�	PROPN
ap-850	108	17	8	8	NUM
ap-850	108	18	14.11	14.11	NUM
ap-850	108	19	1942	1942	NUM
ap-850	108	20	-	-	SYM
ap-850	108	21	02	02	NUM
ap-850	108	22	1.53×10	1.53×10	NUM
ap-850	108	23	�	�	PROPN
ap-850	108	24	8	8	NUM
ap-850	108	25	14.27	14.27	NUM
ap-850	108	26	1940	1940	NUM
ap-850	108	27	-	-	SYM
ap-850	108	28	24	24	NUM
ap-850	108	29	1.63×10	1.63×10	NUM
ap-850	108	30	�	�	PROPN
ap-850	108	31	8	8	NUM
ap-850	108	32	14.15	14.15	NUM
ap-850	108	33	1x-0883	1x-0883	NUM
ap-850	108	34	2.90×10	2.90×10	NUM
ap-850	108	35	�	�	NOUN
ap-850	108	36	8	8	NUM
ap-850	108	37	7.44	7.44	NUM
ap-850	108	38	le1	le1	PROPN
ap-850	108	39	1.50×10	1.50×10	NUM
ap-850	108	40	�	�	NOUN
ap-850	108	41	8	8	NUM
ap-850	108	42	14.58	14.58	NUM
ap-850	108	43	le2	le2	PROPN
ap-850	108	44	1.10×10	1.10×10	NUM
ap-850	108	45	�	�	PROPN
ap-850	108	46	8	8	NUM
ap-850	108	47	14.57	14.57	NUM
ap-850	108	48	le5	le5	ADJ
ap-850	108	49	1.50×10	1.50×10	NUM
ap-850	108	50	�	�	NOUN
ap-850	108	51	8	8	NUM
ap-850	108	52	15.03	15.03	NUM
ap-850	108	53	table	table	NOUN
ap-850	108	54	2	2	NUM
ap-850	108	55	:	:	PUNCT
ap-850	108	56	lifetime	lifetime	NOUN
ap-850	108	57	of	of	ADP
ap-850	108	58	minority	minority	NOUN
ap-850	108	59	charge	charge	NOUN
ap-850	108	60	carriers	carrier	NOUN
ap-850	108	61	in	in	ADP
ap-850	108	62	the	the	DET
ap-850	108	63	space	space	NOUN
ap-850	108	64	charge	charge	NOUN
ap-850	108	65	region	region	NOUN
ap-850	108	66	.	.	PUNCT
ap-850	109	1	and	and	CCONJ
ap-850	109	2	the	the	DET
ap-850	109	3	solar	solar	ADJ
ap-850	109	4	cell	cell	NOUN
ap-850	109	5	efficiencies	efficiency	NOUN
ap-850	109	6	of	of	ADP
ap-850	109	7	the	the	DET
ap-850	109	8	measured	measured	ADJ
ap-850	109	9	sample	sample	NOUN