id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
aiti-1020	Bakowski, M.; Lang, J.; Lim, J-K.; Hellén, J.; Nilsson, T.M.J.; Schodt, B.; Poder, R.; Belov, I.; Leisner, P.	Reliability Study of GaN-on-SiC HEMT RF Power Amplifiers	2018	9	.pdf	application/pdf	3408	179	64	Abstract The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. The typical forward blocking characteristics of the devices after varying numbers of power cycles are shown in Fig.	cache/aiti-1020.pdf	txt/aiti-1020.txt