id	sid	tid	token	lemma	pos
aiti-8098	1	1	advances	advance	NOUN
aiti-8098	1	2	in	in	ADP
aiti-8098	1	3	technology	technology	NOUN
aiti-8098	1	4	innovation	innovation	NOUN
aiti-8098	1	5	,	,	PUNCT
aiti-8098	1	6	vol	vol	NOUN
aiti-8098	1	7	.	.	PROPN
aiti-8098	2	1	7	7	NUM
aiti-8098	2	2	,	,	PUNCT
aiti-8098	2	3	no	no	INTJ
aiti-8098	2	4	.	.	NOUN
aiti-8098	2	5	1	1	NUM
aiti-8098	2	6	,	,	PUNCT
aiti-8098	2	7	2022	2022	NUM
aiti-8098	2	8	,	,	PUNCT
aiti-8098	2	9	pp	pp	ADJ
aiti-8098	2	10	.	.	PUNCT
aiti-8098	3	1	19	19	NUM
aiti-8098	3	2	-	-	SYM
aiti-8098	3	3	29	29	NUM
aiti-8098	3	4	implementation	implementation	NOUN
aiti-8098	3	5	of	of	ADP
aiti-8098	3	6	20	20	NUM
aiti-8098	3	7	nm	nm	ADJ
aiti-8098	3	8	graphene	graphene	NOUN
aiti-8098	3	9	channel	channel	NOUN
aiti-8098	3	10	field	field	NOUN
aiti-8098	3	11	effect	effect	NOUN
aiti-8098	3	12	transistors	transistor	NOUN
aiti-8098	3	13	using	use	VERB
aiti-8098	3	14	silvaco	silvaco	ADJ
aiti-8098	3	15	tcad	tcad	ADJ
aiti-8098	3	16	tool	tool	NOUN
aiti-8098	3	17	to	to	PART
aiti-8098	3	18	improve	improve	VERB
aiti-8098	3	19	short	short	ADJ
aiti-8098	3	20	channel	channel	NOUN
aiti-8098	3	21	effects	effect	NOUN
aiti-8098	3	22	over	over	ADP
aiti-8098	3	23	conventional	conventional	ADJ
aiti-8098	3	24	mosfets	mosfet	NOUN
aiti-8098	3	25	vinod	vinod	PROPN
aiti-8098	3	26	pralhad	pralhad	VERB
aiti-8098	3	27	tayade	tayade	NOUN
aiti-8098	3	28	1	1	NUM
aiti-8098	3	29	,	,	PUNCT
aiti-8098	3	30	3	3	NUM
aiti-8098	3	31	,	,	PUNCT
aiti-8098	3	32	*	*	PUNCT
aiti-8098	3	33	,	,	PUNCT
aiti-8098	3	34	swapnil	swapnil	NOUN
aiti-8098	3	35	laxman	laxman	NOUN
aiti-8098	3	36	lahudkar	lahudkar	PROPN
aiti-8098	3	37	2	2	NUM
aiti-8098	3	38	1department	1department	NUM
aiti-8098	3	39	of	of	ADP
aiti-8098	3	40	electronics	electronic	NOUN
aiti-8098	3	41	and	and	CCONJ
aiti-8098	3	42	telecommunication	telecommunication	NOUN
aiti-8098	3	43	engineering	engineering	NOUN
aiti-8098	3	44	,	,	PUNCT
aiti-8098	3	45	aissms	aissms	PROPN
aiti-8098	3	46	institute	institute	PROPN
aiti-8098	3	47	of	of	ADP
aiti-8098	3	48	information	information	NOUN
aiti-8098	3	49	technology	technology	NOUN
aiti-8098	3	50	,	,	PUNCT
aiti-8098	3	51	pune	pune	NOUN
aiti-8098	3	52	,	,	PUNCT
aiti-8098	3	53	india	india	PROPN
aiti-8098	3	54	2department	2department	PROPN
aiti-8098	3	55	of	of	ADP
aiti-8098	3	56	electronics	electronic	NOUN
aiti-8098	3	57	and	and	CCONJ
aiti-8098	3	58	telecommunication	telecommunication	NOUN
aiti-8098	3	59	engineering	engineering	NOUN
aiti-8098	3	60	,	,	PUNCT
aiti-8098	3	61	jspm	jspm	PROPN
aiti-8098	3	62	’s	’s	PART
aiti-8098	3	63	imperial	imperial	PROPN
aiti-8098	3	64	college	college	NOUN
aiti-8098	3	65	of	of	ADP
aiti-8098	3	66	engineering	engineering	NOUN
aiti-8098	3	67	and	and	CCONJ
aiti-8098	3	68	research	research	NOUN
aiti-8098	3	69	,	,	PUNCT
aiti-8098	3	70	pune	pune	NOUN
aiti-8098	3	71	,	,	PUNCT
aiti-8098	3	72	india	india	PROPN
aiti-8098	3	73	3department	3department	PROPN
aiti-8098	3	74	of	of	ADP
aiti-8098	3	75	electronics	electronic	NOUN
aiti-8098	3	76	and	and	CCONJ
aiti-8098	3	77	telecommunication	telecommunication	NOUN
aiti-8098	3	78	engineering	engineering	NOUN
aiti-8098	3	79	,	,	PUNCT
aiti-8098	3	80	government	government	NOUN
aiti-8098	3	81	polytechnic	polytechnic	ADJ
aiti-8098	3	82	,	,	PUNCT
aiti-8098	3	83	nashik	nashik	NOUN
aiti-8098	3	84	,	,	PUNCT
aiti-8098	3	85	india	india	PROPN
aiti-8098	3	86	received	receive	VERB
aiti-8098	3	87	17	17	NUM
aiti-8098	3	88	july	july	PROPN
aiti-8098	3	89	2021	2021	NUM
aiti-8098	3	90	;	;	PUNCT
aiti-8098	3	91	received	receive	VERB
aiti-8098	3	92	in	in	ADP
aiti-8098	3	93	revised	revise	VERB
aiti-8098	3	94	form	form	NOUN
aiti-8098	3	95	01	01	NUM
aiti-8098	3	96	september	september	PROPN
aiti-8098	3	97	2021	2021	NUM
aiti-8098	3	98	;	;	PUNCT
aiti-8098	3	99	accepted	accept	VERB
aiti-8098	3	100	02	02	NUM
aiti-8098	3	101	september	september	PROPN
aiti-8098	3	102	2021	2021	NUM
aiti-8098	3	103	doi	doi	NOUN
aiti-8098	3	104	:	:	PUNCT
aiti-8098	3	105	https://doi.org/10.46604/aiti.2021.8098	https://doi.org/10.46604/aiti.2021.8098	PROPN
aiti-8098	3	106	abstract	abstract	NOUN
aiti-8098	3	107	in	in	ADP
aiti-8098	3	108	recent	recent	ADJ
aiti-8098	3	109	years	year	NOUN
aiti-8098	3	110	,	,	PUNCT
aiti-8098	3	111	demands	demand	NOUN
aiti-8098	3	112	for	for	ADP
aiti-8098	3	113	high	high	ADJ
aiti-8098	3	114	speed	speed	NOUN
aiti-8098	3	115	and	and	CCONJ
aiti-8098	3	116	low	low	ADJ
aiti-8098	3	117	power	power	NOUN
aiti-8098	3	118	circuits	circuit	NOUN
aiti-8098	3	119	have	have	AUX
aiti-8098	3	120	been	be	AUX
aiti-8098	3	121	raised	raise	VERB
aiti-8098	3	122	.	.	PUNCT
aiti-8098	4	1	as	as	SCONJ
aiti-8098	4	2	conventional	conventional	ADJ
aiti-8098	4	3	metal	metal	NOUN
aiti-8098	4	4	oxide	oxide	NOUN
aiti-8098	4	5	semiconductor	semiconductor	NOUN
aiti-8098	4	6	field	field	NOUN
aiti-8098	4	7	effect	effect	NOUN
aiti-8098	4	8	transistors	transistor	NOUN
aiti-8098	4	9	(	(	PUNCT
aiti-8098	4	10	mosfets	mosfet	NOUN
aiti-8098	4	11	)	)	PUNCT
aiti-8098	4	12	are	be	AUX
aiti-8098	4	13	unable	unable	ADJ
aiti-8098	4	14	to	to	PART
aiti-8098	4	15	satisfy	satisfy	VERB
aiti-8098	4	16	the	the	DET
aiti-8098	4	17	demands	demand	NOUN
aiti-8098	4	18	due	due	ADP
aiti-8098	4	19	to	to	ADP
aiti-8098	4	20	short	short	ADJ
aiti-8098	4	21	channel	channel	NOUN
aiti-8098	4	22	effects	effect	NOUN
aiti-8098	4	23	,	,	PUNCT
aiti-8098	4	24	the	the	DET
aiti-8098	4	25	purpose	purpose	NOUN
aiti-8098	4	26	of	of	ADP
aiti-8098	4	27	the	the	DET
aiti-8098	4	28	study	study	NOUN
aiti-8098	4	29	is	be	AUX
aiti-8098	4	30	to	to	PART
aiti-8098	4	31	design	design	VERB
aiti-8098	4	32	an	an	DET
aiti-8098	4	33	alternative	alternative	NOUN
aiti-8098	4	34	of	of	ADP
aiti-8098	4	35	mosfets	mosfet	NOUN
aiti-8098	4	36	.	.	PUNCT
aiti-8098	5	1	graphene	graphene	NOUN
aiti-8098	5	2	fets	fet	NOUN
aiti-8098	5	3	are	be	AUX
aiti-8098	5	4	one	one	NUM
aiti-8098	5	5	of	of	ADP
aiti-8098	5	6	the	the	DET
aiti-8098	5	7	alternatives	alternative	NOUN
aiti-8098	5	8	of	of	ADP
aiti-8098	5	9	mosfets	mosfet	NOUN
aiti-8098	5	10	due	due	ADP
aiti-8098	5	11	to	to	ADP
aiti-8098	5	12	the	the	DET
aiti-8098	5	13	excellent	excellent	ADJ
aiti-8098	5	14	properties	property	NOUN
aiti-8098	5	15	of	of	ADP
aiti-8098	5	16	graphene	graphene	ADJ
aiti-8098	5	17	material	material	NOUN
aiti-8098	5	18	.	.	PUNCT
aiti-8098	6	1	in	in	ADP
aiti-8098	6	2	this	this	DET
aiti-8098	6	3	work	work	NOUN
aiti-8098	6	4	,	,	PUNCT
aiti-8098	6	5	a	a	DET
aiti-8098	6	6	user	user	NOUN
aiti-8098	6	7	-	-	PUNCT
aiti-8098	6	8	defined	define	VERB
aiti-8098	6	9	graphene	graphene	NOUN
aiti-8098	6	10	material	material	NOUN
aiti-8098	6	11	is	be	AUX
aiti-8098	6	12	defined	define	VERB
aiti-8098	6	13	,	,	PUNCT
aiti-8098	6	14	and	and	CCONJ
aiti-8098	6	15	a	a	DET
aiti-8098	6	16	graphene	graphene	ADJ
aiti-8098	6	17	channel	channel	NOUN
aiti-8098	6	18	fet	fet	NOUN
aiti-8098	6	19	is	be	AUX
aiti-8098	6	20	implemented	implement	VERB
aiti-8098	6	21	using	use	VERB
aiti-8098	6	22	the	the	DET
aiti-8098	6	23	silvaco	silvaco	PROPN
aiti-8098	6	24	technology	technology	NOUN
aiti-8098	6	25	computer	computer	NOUN
aiti-8098	6	26	-	-	PUNCT
aiti-8098	6	27	aided	aid	VERB
aiti-8098	6	28	design	design	NOUN
aiti-8098	6	29	(	(	PUNCT
aiti-8098	6	30	tcad	tcad	ADJ
aiti-8098	6	31	)	)	PUNCT
aiti-8098	6	32	tool	tool	NOUN
aiti-8098	6	33	at	at	ADP
aiti-8098	6	34	100	100	NUM
aiti-8098	6	35	nm	nm	NOUN
aiti-8098	6	36	and	and	CCONJ
aiti-8098	6	37	scaled	scale	VERB
aiti-8098	6	38	to	to	ADP
aiti-8098	6	39	20	20	NUM
aiti-8098	6	40	nm	nm	ADJ
aiti-8098	6	41	channel	channel	NOUN
aiti-8098	6	42	length	length	NOUN
aiti-8098	6	43	.	.	PUNCT
aiti-8098	7	1	a	a	DET
aiti-8098	7	2	silicon	silicon	NOUN
aiti-8098	7	3	channel	channel	NOUN
aiti-8098	7	4	mosfet	mosfet	NOUN
aiti-8098	7	5	is	be	AUX
aiti-8098	7	6	also	also	ADV
aiti-8098	7	7	implemented	implement	VERB
aiti-8098	7	8	to	to	PART
aiti-8098	7	9	compare	compare	VERB
aiti-8098	7	10	the	the	DET
aiti-8098	7	11	performance	performance	NOUN
aiti-8098	7	12	.	.	PUNCT
aiti-8098	8	1	the	the	DET
aiti-8098	8	2	results	result	NOUN
aiti-8098	8	3	show	show	VERB
aiti-8098	8	4	the	the	DET
aiti-8098	8	5	improvement	improvement	NOUN
aiti-8098	8	6	in	in	ADP
aiti-8098	8	7	subthreshold	subthreshold	ADJ
aiti-8098	8	8	slope	slope	NOUN
aiti-8098	8	9	(	(	PUNCT
aiti-8098	8	10	ss	ss	NOUN
aiti-8098	8	11	)	)	PUNCT
aiti-8098	8	12	=	=	SYM
aiti-8098	8	13	114	114	NUM
aiti-8098	8	14	mv	mv	PROPN
aiti-8098	8	15	/	/	SYM
aiti-8098	8	16	dec	dec	PROPN
aiti-8098	8	17	,	,	PUNCT
aiti-8098	8	18	ion	ion	NOUN
aiti-8098	8	19	/	/	SYM
aiti-8098	8	20	ioff	ioff	NOUN
aiti-8098	8	21	ratio	ratio	NOUN
aiti-8098	8	22	=	=	SYM
aiti-8098	8	23	14379	14379	NUM
aiti-8098	8	24	,	,	PUNCT
aiti-8098	8	25	and	and	CCONJ
aiti-8098	8	26	drain	drain	VERB
aiti-8098	8	27	induced	induce	VERB
aiti-8098	8	28	barrier	barrier	NOUN
aiti-8098	8	29	lowering	lower	VERB
aiti-8098	8	30	(	(	PUNCT
aiti-8098	8	31	dibl	dibl	PROPN
aiti-8098	8	32	)	)	PUNCT
aiti-8098	9	1	=	=	SYM
aiti-8098	9	2	123	123	NUM
aiti-8098	9	3	mv	mv	PROPN
aiti-8098	9	4	/	/	SYM
aiti-8098	9	5	v.	v.	CCONJ
aiti-8098	9	6	it	it	PRON
aiti-8098	9	7	is	be	AUX
aiti-8098	9	8	concluded	conclude	VERB
aiti-8098	9	9	that	that	SCONJ
aiti-8098	9	10	graphene	graphene	NOUN
aiti-8098	9	11	fets	fet	NOUN
aiti-8098	9	12	are	be	AUX
aiti-8098	9	13	suitable	suitable	ADJ
aiti-8098	9	14	candidates	candidate	NOUN
aiti-8098	9	15	for	for	ADP
aiti-8098	9	16	low	low	ADJ
aiti-8098	9	17	power	power	NOUN
aiti-8098	9	18	applications	application	NOUN
aiti-8098	9	19	.	.	PUNCT
aiti-8098	10	1	keywords	keyword	NOUN
aiti-8098	10	2	:	:	PUNCT
aiti-8098	10	3	graphene	graphene	NOUN
aiti-8098	10	4	,	,	PUNCT
aiti-8098	10	5	mosfet	mosfet	NOUN
aiti-8098	10	6	,	,	PUNCT
aiti-8098	10	7	silvaco	silvaco	PROPN
aiti-8098	10	8	tcad	tcad	NOUN
aiti-8098	10	9	,	,	PUNCT
aiti-8098	10	10	graphene	graphene	NOUN
aiti-8098	10	11	fet	fet	PROPN
aiti-8098	10	12	,	,	PUNCT
aiti-8098	10	13	2d	2d	NUM
aiti-8098	10	14	low	low	ADJ
aiti-8098	10	15	power	power	NOUN
aiti-8098	10	16	design	design	NOUN
aiti-8098	10	17	,	,	PUNCT
aiti-8098	10	18	2d	2d	NOUN
aiti-8098	10	19	-	-	PUNCT
aiti-8098	10	20	material	material	NOUN
aiti-8098	10	21	1	1	NUM
aiti-8098	10	22	.	.	PUNCT
aiti-8098	10	23	introduction	introduction	NOUN
aiti-8098	10	24	conventional	conventional	ADJ
aiti-8098	10	25	metal	metal	NOUN
aiti-8098	10	26	oxide	oxide	NOUN
aiti-8098	10	27	semiconductor	semiconductor	NOUN
aiti-8098	10	28	field	field	NOUN
aiti-8098	10	29	effect	effect	NOUN
aiti-8098	10	30	transistors	transistor	NOUN
aiti-8098	10	31	(	(	PUNCT
aiti-8098	10	32	mosfets	mosfet	NOUN
aiti-8098	10	33	)	)	PUNCT
aiti-8098	10	34	have	have	VERB
aiti-8098	10	35	a	a	DET
aiti-8098	10	36	limitation	limitation	NOUN
aiti-8098	10	37	when	when	SCONJ
aiti-8098	10	38	scaled	scale	VERB
aiti-8098	10	39	down	down	ADP
aiti-8098	10	40	to	to	ADP
aiti-8098	10	41	nanometer	nanometer	NOUN
aiti-8098	10	42	channel	channel	NOUN
aiti-8098	10	43	lengths	length	NOUN
aiti-8098	10	44	.	.	PUNCT
aiti-8098	11	1	their	their	PRON
aiti-8098	11	2	performance	performance	NOUN
aiti-8098	11	3	is	be	AUX
aiti-8098	11	4	degraded	degraded	ADJ
aiti-8098	11	5	and	and	CCONJ
aiti-8098	11	6	short	short	ADJ
aiti-8098	11	7	channel	channel	NOUN
aiti-8098	11	8	effects	effect	NOUN
aiti-8098	11	9	emerge	emerge	VERB
aiti-8098	11	10	,	,	PUNCT
aiti-8098	11	11	which	which	PRON
aiti-8098	11	12	degrade	degrade	VERB
aiti-8098	11	13	the	the	DET
aiti-8098	11	14	overall	overall	ADJ
aiti-8098	11	15	performance	performance	NOUN
aiti-8098	11	16	of	of	ADP
aiti-8098	11	17	devices	device	NOUN
aiti-8098	11	18	.	.	PUNCT
aiti-8098	12	1	the	the	DET
aiti-8098	12	2	circuit	circuit	NOUN
aiti-8098	12	3	designed	design	VERB
aiti-8098	12	4	using	use	VERB
aiti-8098	12	5	the	the	DET
aiti-8098	12	6	scaled	scale	VERB
aiti-8098	12	7	device	device	NOUN
aiti-8098	12	8	consume	consume	VERB
aiti-8098	12	9	more	more	ADV
aiti-8098	12	10	static	static	ADJ
aiti-8098	12	11	and	and	CCONJ
aiti-8098	12	12	dynamic	dynamic	ADJ
aiti-8098	12	13	power	power	NOUN
aiti-8098	12	14	.	.	PUNCT
aiti-8098	13	1	hence	hence	ADV
aiti-8098	13	2	,	,	PUNCT
aiti-8098	13	3	the	the	DET
aiti-8098	13	4	era	era	NOUN
aiti-8098	13	5	of	of	ADP
aiti-8098	13	6	conventional	conventional	ADJ
aiti-8098	13	7	mosfets	mosfet	NOUN
aiti-8098	13	8	has	have	AUX
aiti-8098	13	9	come	come	VERB
aiti-8098	13	10	to	to	ADP
aiti-8098	13	11	an	an	DET
aiti-8098	13	12	end	end	NOUN
aiti-8098	13	13	and	and	CCONJ
aiti-8098	13	14	the	the	DET
aiti-8098	13	15	device	device	NOUN
aiti-8098	13	16	design	design	NOUN
aiti-8098	13	17	community	community	NOUN
aiti-8098	13	18	is	be	AUX
aiti-8098	13	19	in	in	ADP
aiti-8098	13	20	search	search	NOUN
aiti-8098	13	21	of	of	ADP
aiti-8098	13	22	an	an	DET
aiti-8098	13	23	alternative	alternative	NOUN
aiti-8098	13	24	of	of	ADP
aiti-8098	13	25	conventional	conventional	ADJ
aiti-8098	13	26	mosfets	mosfet	NOUN
aiti-8098	13	27	.	.	PUNCT
aiti-8098	14	1	it	it	PRON
aiti-8098	14	2	is	be	AUX
aiti-8098	14	3	important	important	ADJ
aiti-8098	14	4	to	to	PART
aiti-8098	14	5	search	search	VERB
aiti-8098	14	6	for	for	ADP
aiti-8098	14	7	a	a	DET
aiti-8098	14	8	convincing	convincing	ADJ
aiti-8098	14	9	material	material	NOUN
aiti-8098	14	10	,	,	PUNCT
aiti-8098	14	11	which	which	PRON
aiti-8098	14	12	can	can	AUX
aiti-8098	14	13	be	be	AUX
aiti-8098	14	14	used	use	VERB
aiti-8098	14	15	at	at	ADP
aiti-8098	14	16	small	small	ADJ
aiti-8098	14	17	channel	channel	NOUN
aiti-8098	14	18	lengths	length	NOUN
aiti-8098	14	19	.	.	PUNCT
aiti-8098	15	1	graphene	graphene	NOUN
aiti-8098	15	2	is	be	AUX
aiti-8098	15	3	a	a	DET
aiti-8098	15	4	promising	promising	ADJ
aiti-8098	15	5	material	material	NOUN
aiti-8098	15	6	due	due	ADP
aiti-8098	15	7	to	to	ADP
aiti-8098	15	8	its	its	PRON
aiti-8098	15	9	higher	high	ADJ
aiti-8098	15	10	mobility	mobility	NOUN
aiti-8098	15	11	,	,	PUNCT
aiti-8098	15	12	better	well	ADJ
aiti-8098	15	13	electrical	electrical	ADJ
aiti-8098	15	14	conductivity	conductivity	NOUN
aiti-8098	15	15	,	,	PUNCT
aiti-8098	15	16	and	and	CCONJ
aiti-8098	15	17	better	well	ADJ
aiti-8098	15	18	thermal	thermal	ADJ
aiti-8098	15	19	conductivity	conductivity	NOUN
aiti-8098	15	20	.	.	PUNCT
aiti-8098	16	1	the	the	DET
aiti-8098	16	2	implementation	implementation	NOUN
aiti-8098	16	3	of	of	ADP
aiti-8098	16	4	this	this	DET
aiti-8098	16	5	atomically	atomically	ADV
aiti-8098	16	6	thin	thin	ADJ
aiti-8098	16	7	material	material	NOUN
aiti-8098	16	8	needs	need	VERB
aiti-8098	16	9	to	to	PART
aiti-8098	16	10	be	be	AUX
aiti-8098	16	11	defined	define	VERB
aiti-8098	16	12	in	in	ADP
aiti-8098	16	13	the	the	DET
aiti-8098	16	14	silvaco	silvaco	PROPN
aiti-8098	16	15	technology	technology	NOUN
aiti-8098	16	16	computer	computer	NOUN
aiti-8098	16	17	-	-	PUNCT
aiti-8098	16	18	aided	aid	VERB
aiti-8098	16	19	design	design	NOUN
aiti-8098	16	20	(	(	PUNCT
aiti-8098	16	21	tcad	tcad	ADJ
aiti-8098	16	22	)	)	PUNCT
aiti-8098	16	23	tool	tool	NOUN
aiti-8098	16	24	for	for	ADP
aiti-8098	16	25	any	any	DET
aiti-8098	16	26	further	further	ADJ
aiti-8098	16	27	use	use	NOUN
aiti-8098	16	28	of	of	ADP
aiti-8098	16	29	graphene	graphene	ADJ
aiti-8098	16	30	material	material	NOUN
aiti-8098	16	31	applications	application	NOUN
aiti-8098	16	32	.	.	PUNCT
aiti-8098	17	1	the	the	DET
aiti-8098	17	2	purpose	purpose	NOUN
aiti-8098	17	3	of	of	ADP
aiti-8098	17	4	this	this	DET
aiti-8098	17	5	study	study	NOUN
aiti-8098	17	6	is	be	AUX
aiti-8098	17	7	to	to	PART
aiti-8098	17	8	investigate	investigate	VERB
aiti-8098	17	9	and	and	CCONJ
aiti-8098	17	10	use	use	VERB
aiti-8098	17	11	the	the	DET
aiti-8098	17	12	significant	significant	ADJ
aiti-8098	17	13	properties	property	NOUN
aiti-8098	17	14	of	of	ADP
aiti-8098	17	15	the	the	DET
aiti-8098	17	16	promising	promising	ADJ
aiti-8098	17	17	graphene	graphene	NOUN
aiti-8098	17	18	material	material	NOUN
aiti-8098	17	19	as	as	ADP
aiti-8098	17	20	a	a	DET
aiti-8098	17	21	channel	channel	NOUN
aiti-8098	17	22	to	to	PART
aiti-8098	17	23	replace	replace	VERB
aiti-8098	17	24	conventional	conventional	ADJ
aiti-8098	17	25	mosfets	mosfet	NOUN
aiti-8098	17	26	.	.	PUNCT
aiti-8098	18	1	the	the	DET
aiti-8098	18	2	mobility	mobility	NOUN
aiti-8098	18	3	of	of	ADP
aiti-8098	18	4	graphene	graphene	NOUN
aiti-8098	18	5	material	material	NOUN
aiti-8098	18	6	is	be	AUX
aiti-8098	18	7	high	high	ADJ
aiti-8098	18	8	,	,	PUNCT
aiti-8098	18	9	and	and	CCONJ
aiti-8098	18	10	hence	hence	ADV
aiti-8098	18	11	it	it	PRON
aiti-8098	18	12	can	can	AUX
aiti-8098	18	13	be	be	AUX
aiti-8098	18	14	used	use	VERB
aiti-8098	18	15	as	as	ADP
aiti-8098	18	16	a	a	DET
aiti-8098	18	17	channel	channel	NOUN
aiti-8098	18	18	material	material	NOUN
aiti-8098	18	19	for	for	ADP
aiti-8098	18	20	small	small	ADJ
aiti-8098	18	21	geometry	geometry	NOUN
aiti-8098	18	22	devices	device	NOUN
aiti-8098	18	23	.	.	PUNCT
aiti-8098	19	1	the	the	DET
aiti-8098	19	2	work	work	NOUN
aiti-8098	19	3	on	on	ADP
aiti-8098	19	4	graphene	graphene	ADJ
aiti-8098	19	5	channel	channel	NOUN
aiti-8098	19	6	fets	fet	NOUN
aiti-8098	19	7	is	be	AUX
aiti-8098	19	8	still	still	ADV
aiti-8098	19	9	in	in	ADP
aiti-8098	19	10	its	its	PRON
aiti-8098	19	11	initial	initial	ADJ
aiti-8098	19	12	stage	stage	NOUN
aiti-8098	19	13	,	,	PUNCT
aiti-8098	19	14	as	as	SCONJ
aiti-8098	19	15	it	it	PRON
aiti-8098	19	16	needs	need	VERB
aiti-8098	19	17	to	to	PART
aiti-8098	19	18	further	far	ADV
aiti-8098	19	19	improve	improve	VERB
aiti-8098	19	20	and	and	CCONJ
aiti-8098	19	21	optimize	optimize	VERB
aiti-8098	19	22	the	the	DET
aiti-8098	19	23	ion	ion	NOUN
aiti-8098	19	24	/	/	SYM
aiti-8098	19	25	ioff	ioff	NOUN
aiti-8098	19	26	ratio	ratio	NOUN
aiti-8098	19	27	,	,	PUNCT
aiti-8098	19	28	subthreshold	subthreshold	ADJ
aiti-8098	19	29	slope	slope	NOUN
aiti-8098	19	30	(	(	PUNCT
aiti-8098	19	31	ss	ss	NOUN
aiti-8098	19	32	)	)	PUNCT
aiti-8098	19	33	,	,	PUNCT
aiti-8098	19	34	and	and	CCONJ
aiti-8098	19	35	drain	drain	VERB
aiti-8098	19	36	induced	induce	VERB
aiti-8098	19	37	barrier	barrier	NOUN
aiti-8098	19	38	lowering	lower	VERB
aiti-8098	19	39	(	(	PUNCT
aiti-8098	19	40	dibl	dibl	PROPN
aiti-8098	19	41	)	)	PUNCT
aiti-8098	19	42	of	of	ADP
aiti-8098	19	43	these	these	DET
aiti-8098	19	44	short	short	ADJ
aiti-8098	19	45	channel	channel	NOUN
aiti-8098	19	46	parameters	parameter	NOUN
aiti-8098	19	47	.	.	PUNCT
aiti-8098	20	1	in	in	ADP
aiti-8098	20	2	the	the	DET
aiti-8098	20	3	present	present	ADJ
aiti-8098	20	4	scenario	scenario	NOUN
aiti-8098	20	5	,	,	PUNCT
aiti-8098	20	6	graphene	graphene	ADJ
aiti-8098	20	7	fets	fet	NOUN
aiti-8098	20	8	are	be	AUX
aiti-8098	20	9	the	the	DET
aiti-8098	20	10	demanding	demand	VERB
aiti-8098	20	11	devices	device	NOUN
aiti-8098	20	12	for	for	ADP
aiti-8098	20	13	low	low	ADJ
aiti-8098	20	14	power	power	NOUN
aiti-8098	20	15	,	,	PUNCT
aiti-8098	20	16	radio	radio	NOUN
aiti-8098	20	17	frequency	frequency	NOUN
aiti-8098	20	18	(	(	PUNCT
aiti-8098	20	19	rf	rf	NOUN
aiti-8098	20	20	)	)	PUNCT
aiti-8098	20	21	,	,	PUNCT
aiti-8098	20	22	*	*	PUNCT
aiti-8098	20	23	corresponding	correspond	VERB
aiti-8098	20	24	author	author	NOUN
aiti-8098	20	25	.	.	PUNCT
aiti-8098	21	1	e	e	X
aiti-8098	21	2	-	-	NOUN
aiti-8098	21	3	mail	mail	NOUN
aiti-8098	21	4	address	address	NOUN
aiti-8098	21	5	:	:	PUNCT
aiti-8098	21	6	taydevinod@gmail.com	taydevinod@gmail.com	PROPN
aiti-8098	21	7	tel	tel	PROPN
aiti-8098	21	8	.	.	PUNCT
aiti-8098	21	9	:	:	PUNCT
aiti-8098	22	1	+91	+91	NOUN
aiti-8098	22	2	-	-	PUNCT
aiti-8098	22	3	9766334676	9766334676	NUM
aiti-8098	22	4	advances	advance	NOUN
aiti-8098	22	5	in	in	ADP
aiti-8098	22	6	technology	technology	NOUN
aiti-8098	22	7	innovation	innovation	NOUN
aiti-8098	22	8	,	,	PUNCT
aiti-8098	22	9	vol	vol	NOUN
aiti-8098	22	10	.	.	PROPN
aiti-8098	22	11	7	7	NUM
aiti-8098	22	12	,	,	PUNCT
aiti-8098	22	13	no	no	INTJ
aiti-8098	22	14	.	.	NOUN
aiti-8098	22	15	1	1	NUM
aiti-8098	22	16	,	,	PUNCT
aiti-8098	22	17	2022	2022	NUM
aiti-8098	22	18	,	,	PUNCT
aiti-8098	22	19	pp	pp	ADJ
aiti-8098	22	20	.	.	PUNCT
aiti-8098	23	1	19	19	NUM
aiti-8098	23	2	-	-	SYM
aiti-8098	23	3	29	29	NUM
aiti-8098	23	4	biosensor	biosensor	NOUN
aiti-8098	23	5	circuits	circuit	NOUN
aiti-8098	23	6	,	,	PUNCT
aiti-8098	23	7	and	and	CCONJ
aiti-8098	23	8	high	high	ADJ
aiti-8098	23	9	-	-	PUNCT
aiti-8098	23	10	speed	speed	NOUN
aiti-8098	23	11	analog	analog	NOUN
aiti-8098	23	12	very	very	ADV
aiti-8098	23	13	-	-	PUNCT
aiti-8098	23	14	large	large	ADJ
aiti-8098	23	15	-	-	PUNCT
aiti-8098	23	16	scale	scale	NOUN
aiti-8098	23	17	integration	integration	NOUN
aiti-8098	23	18	(	(	PUNCT
aiti-8098	23	19	vlsi	vlsi	NOUN
aiti-8098	23	20	)	)	PUNCT
aiti-8098	23	21	designs	design	NOUN
aiti-8098	23	22	.	.	PUNCT
aiti-8098	24	1	one	one	NUM
aiti-8098	24	2	major	major	ADJ
aiti-8098	24	3	concern	concern	NOUN
aiti-8098	24	4	for	for	ADP
aiti-8098	24	5	designing	design	VERB
aiti-8098	24	6	graphene	graphene	NOUN
aiti-8098	24	7	fets	fet	NOUN
aiti-8098	24	8	is	be	AUX
aiti-8098	24	9	the	the	DET
aiti-8098	24	10	availability	availability	NOUN
aiti-8098	24	11	of	of	ADP
aiti-8098	24	12	software	software	NOUN
aiti-8098	24	13	tools	tool	NOUN
aiti-8098	24	14	because	because	SCONJ
aiti-8098	24	15	graphene	graphene	NOUN
aiti-8098	24	16	is	be	AUX
aiti-8098	24	17	not	not	PART
aiti-8098	24	18	available	available	ADJ
aiti-8098	24	19	in	in	ADP
aiti-8098	24	20	conventional	conventional	ADJ
aiti-8098	24	21	tcad	tcad	ADJ
aiti-8098	24	22	tools	tool	NOUN
aiti-8098	24	23	such	such	ADJ
aiti-8098	24	24	as	as	ADP
aiti-8098	24	25	the	the	DET
aiti-8098	24	26	silvaco	silvaco	ADJ
aiti-8098	24	27	tcad	tcad	NOUN
aiti-8098	24	28	and	and	CCONJ
aiti-8098	24	29	synopsys	synopsys	PROPN
aiti-8098	24	30	sentaurus	sentaurus	NOUN
aiti-8098	24	31	tcad	tcad	ADJ
aiti-8098	24	32	tools	tool	NOUN
aiti-8098	24	33	.	.	PUNCT
aiti-8098	25	1	hence	hence	ADV
aiti-8098	25	2	,	,	PUNCT
aiti-8098	25	3	one	one	NUM
aiti-8098	25	4	purpose	purpose	NOUN
aiti-8098	25	5	of	of	ADP
aiti-8098	25	6	the	the	DET
aiti-8098	25	7	study	study	NOUN
aiti-8098	25	8	is	be	AUX
aiti-8098	25	9	to	to	PART
aiti-8098	25	10	add	add	VERB
aiti-8098	25	11	graphene	graphene	NOUN
aiti-8098	25	12	as	as	ADP
aiti-8098	25	13	a	a	DET
aiti-8098	25	14	user	user	NOUN
aiti-8098	25	15	-	-	PUNCT
aiti-8098	25	16	defined	define	VERB
aiti-8098	25	17	material	material	NOUN
aiti-8098	25	18	in	in	ADP
aiti-8098	25	19	the	the	DET
aiti-8098	25	20	silvaco	silvaco	ADJ
aiti-8098	25	21	tcad	tcad	ADJ
aiti-8098	25	22	tool	tool	PROPN
aiti-8098	25	23	,	,	PUNCT
aiti-8098	25	24	which	which	PRON
aiti-8098	25	25	can	can	AUX
aiti-8098	25	26	be	be	AUX
aiti-8098	25	27	used	use	VERB
aiti-8098	25	28	for	for	ADP
aiti-8098	25	29	any	any	DET
aiti-8098	25	30	applications	application	NOUN
aiti-8098	25	31	.	.	PUNCT
aiti-8098	26	1	the	the	DET
aiti-8098	26	2	study	study	NOUN
aiti-8098	26	3	is	be	AUX
aiti-8098	26	4	organized	organize	VERB
aiti-8098	26	5	as	as	SCONJ
aiti-8098	26	6	follows	follow	VERB
aiti-8098	26	7	.	.	PUNCT
aiti-8098	27	1	section	section	NOUN
aiti-8098	27	2	2	2	NUM
aiti-8098	27	3	presents	present	VERB
aiti-8098	27	4	the	the	DET
aiti-8098	27	5	detailed	detailed	ADJ
aiti-8098	27	6	literature	literature	NOUN
aiti-8098	27	7	review	review	NOUN
aiti-8098	27	8	.	.	PUNCT
aiti-8098	28	1	section	section	NOUN
aiti-8098	28	2	3	3	NUM
aiti-8098	28	3	describes	describe	VERB
aiti-8098	28	4	the	the	DET
aiti-8098	28	5	design	design	NOUN
aiti-8098	28	6	methodology	methodology	NOUN
aiti-8098	28	7	used	use	VERB
aiti-8098	28	8	for	for	ADP
aiti-8098	28	9	implementation	implementation	NOUN
aiti-8098	28	10	.	.	PUNCT
aiti-8098	29	1	section	section	NOUN
aiti-8098	29	2	4	4	NUM
aiti-8098	29	3	provides	provide	VERB
aiti-8098	29	4	the	the	DET
aiti-8098	29	5	design	design	NOUN
aiti-8098	29	6	of	of	ADP
aiti-8098	29	7	100	100	NUM
aiti-8098	29	8	nm	nm	NOUN
aiti-8098	29	9	fet	fet	NOUN
aiti-8098	29	10	using	use	VERB
aiti-8098	29	11	silicon	silicon	NOUN
aiti-8098	29	12	and	and	CCONJ
aiti-8098	29	13	graphene	graphene	VERB
aiti-8098	29	14	material	material	NOUN
aiti-8098	29	15	channels	channel	NOUN
aiti-8098	29	16	,	,	PUNCT
aiti-8098	29	17	defining	define	VERB
aiti-8098	29	18	the	the	DET
aiti-8098	29	19	graphene	graphene	ADJ
aiti-8098	29	20	material	material	NOUN
aiti-8098	29	21	in	in	ADP
aiti-8098	29	22	the	the	DET
aiti-8098	29	23	silvaco	silvaco	ADJ
aiti-8098	29	24	tcad	tcad	PROPN
aiti-8098	29	25	tool	tool	PROPN
aiti-8098	29	26	.	.	PUNCT
aiti-8098	30	1	section	section	NOUN
aiti-8098	30	2	5	5	NUM
aiti-8098	30	3	discusses	discuss	VERB
aiti-8098	30	4	the	the	DET
aiti-8098	30	5	scaling	scaling	NOUN
aiti-8098	30	6	of	of	ADP
aiti-8098	30	7	the	the	DET
aiti-8098	30	8	device	device	NOUN
aiti-8098	30	9	to	to	ADP
aiti-8098	30	10	20	20	NUM
aiti-8098	30	11	nm	nm	NOUN
aiti-8098	30	12	fet	fet	NOUN
aiti-8098	30	13	using	use	VERB
aiti-8098	30	14	silicon	silicon	NOUN
aiti-8098	30	15	and	and	CCONJ
aiti-8098	30	16	graphene	graphene	VERB
aiti-8098	30	17	material	material	NOUN
aiti-8098	30	18	channels	channel	NOUN
aiti-8098	30	19	.	.	PUNCT
aiti-8098	31	1	section	section	NOUN
aiti-8098	31	2	6	6	NUM
aiti-8098	31	3	focuses	focus	VERB
aiti-8098	31	4	on	on	ADP
aiti-8098	31	5	the	the	DET
aiti-8098	31	6	results	result	NOUN
aiti-8098	31	7	and	and	CCONJ
aiti-8098	31	8	the	the	DET
aiti-8098	31	9	comparison	comparison	NOUN
aiti-8098	31	10	with	with	ADP
aiti-8098	31	11	other	other	ADJ
aiti-8098	31	12	published	publish	VERB
aiti-8098	31	13	results	result	NOUN
aiti-8098	31	14	.	.	PUNCT
aiti-8098	32	1	finally	finally	ADV
aiti-8098	32	2	,	,	PUNCT
aiti-8098	32	3	the	the	DET
aiti-8098	32	4	study	study	NOUN
aiti-8098	32	5	is	be	AUX
aiti-8098	32	6	concluded	conclude	VERB
aiti-8098	32	7	.	.	PUNCT
aiti-8098	33	1	2	2	X
aiti-8098	33	2	.	.	X
aiti-8098	33	3	literature	literature	NOUN
aiti-8098	33	4	review	review	NOUN
aiti-8098	33	5	in	in	ADP
aiti-8098	33	6	2015	2015	NUM
aiti-8098	33	7	,	,	PUNCT
aiti-8098	33	8	international	international	ADJ
aiti-8098	33	9	technology	technology	NOUN
aiti-8098	33	10	road	road	NOUN
aiti-8098	33	11	map	map	NOUN
aiti-8098	33	12	for	for	ADP
aiti-8098	33	13	semiconductors	semiconductor	NOUN
aiti-8098	33	14	(	(	PUNCT
aiti-8098	33	15	itrs	itrs	ADJ
aiti-8098	33	16	)	)	PUNCT
aiti-8098	33	17	discussed	discuss	VERB
aiti-8098	33	18	various	various	ADJ
aiti-8098	33	19	emerging	emerge	VERB
aiti-8098	33	20	transistor	transistor	NOUN
aiti-8098	33	21	structures	structure	NOUN
aiti-8098	33	22	in	in	ADP
aiti-8098	33	23	nano	nano	NOUN
aiti-8098	33	24	-	-	PUNCT
aiti-8098	33	25	scales	scale	NOUN
aiti-8098	33	26	[	[	X
aiti-8098	33	27	1	1	NUM
aiti-8098	33	28	]	]	PUNCT
aiti-8098	33	29	.	.	PUNCT
aiti-8098	34	1	graphene	graphene	NOUN
aiti-8098	34	2	fets	fet	NOUN
aiti-8098	34	3	are	be	AUX
aiti-8098	34	4	one	one	NUM
aiti-8098	34	5	of	of	ADP
aiti-8098	34	6	the	the	DET
aiti-8098	34	7	suitable	suitable	ADJ
aiti-8098	34	8	candidates	candidate	NOUN
aiti-8098	34	9	for	for	ADP
aiti-8098	34	10	future	future	ADJ
aiti-8098	34	11	high	high	ADJ
aiti-8098	34	12	-	-	PUNCT
aiti-8098	34	13	density	density	NOUN
aiti-8098	34	14	and	and	CCONJ
aiti-8098	34	15	high	high	ADJ
aiti-8098	34	16	-	-	PUNCT
aiti-8098	34	17	speed	speed	NOUN
aiti-8098	34	18	circuits	circuit	NOUN
aiti-8098	34	19	[	[	X
aiti-8098	34	20	2	2	NUM
aiti-8098	34	21	]	]	PUNCT
aiti-8098	34	22	.	.	PUNCT
aiti-8098	35	1	graphene	graphene	NOUN
aiti-8098	35	2	fets	fet	NOUN
aiti-8098	35	3	are	be	AUX
aiti-8098	35	4	designed	design	VERB
aiti-8098	35	5	by	by	ADP
aiti-8098	35	6	using	use	VERB
aiti-8098	35	7	top	top	ADJ
aiti-8098	35	8	gate	gate	NOUN
aiti-8098	35	9	,	,	PUNCT
aiti-8098	35	10	bottom	bottom	ADJ
aiti-8098	35	11	gate	gate	NOUN
aiti-8098	35	12	,	,	PUNCT
aiti-8098	35	13	and	and	CCONJ
aiti-8098	35	14	side	side	NOUN
aiti-8098	35	15	gate	gate	NOUN
aiti-8098	35	16	approach	approach	NOUN
aiti-8098	35	17	to	to	PART
aiti-8098	35	18	improve	improve	VERB
aiti-8098	35	19	device	device	NOUN
aiti-8098	35	20	parameters	parameter	NOUN
aiti-8098	35	21	.	.	PUNCT
aiti-8098	36	1	various	various	ADJ
aiti-8098	36	2	substrate	substrate	NOUN
aiti-8098	36	3	materials	material	NOUN
aiti-8098	36	4	like	like	ADP
aiti-8098	36	5	silicon	silicon	NOUN
aiti-8098	36	6	substrates	substrate	NOUN
aiti-8098	36	7	,	,	PUNCT
aiti-8098	36	8	sic	sic	ADJ
aiti-8098	36	9	substrates	substrate	NOUN
aiti-8098	36	10	,	,	PUNCT
aiti-8098	36	11	and	and	CCONJ
aiti-8098	36	12	hexagonal	hexagonal	ADJ
aiti-8098	36	13	boron	boron	NOUN
aiti-8098	36	14	nitride	nitride	NOUN
aiti-8098	36	15	(	(	PUNCT
aiti-8098	36	16	hbn	hbn	NOUN
aiti-8098	36	17	)	)	PUNCT
aiti-8098	36	18	substrates	substrate	NOUN
aiti-8098	36	19	are	be	AUX
aiti-8098	36	20	reported	report	VERB
aiti-8098	36	21	as	as	ADP
aiti-8098	36	22	per	per	ADP
aiti-8098	36	23	the	the	DET
aiti-8098	36	24	study	study	NOUN
aiti-8098	36	25	.	.	PUNCT
aiti-8098	37	1	a	a	DET
aiti-8098	37	2	bi	bi	ADJ
aiti-8098	37	3	-	-	ADJ
aiti-8098	37	4	layer	layer	NOUN
aiti-8098	37	5	graphene	graphene	NOUN
aiti-8098	37	6	sheet	sheet	NOUN
aiti-8098	37	7	or	or	CCONJ
aiti-8098	37	8	graphene	graphene	VERB
aiti-8098	37	9	nanoribbon	nanoribbon	NOUN
aiti-8098	37	10	(	(	PUNCT
aiti-8098	37	11	gnr	gnr	PROPN
aiti-8098	37	12	)	)	PUNCT
aiti-8098	37	13	is	be	AUX
aiti-8098	37	14	used	use	VERB
aiti-8098	37	15	to	to	PART
aiti-8098	37	16	introduce	introduce	VERB
aiti-8098	37	17	the	the	DET
aiti-8098	37	18	bandgap	bandgap	NOUN
aiti-8098	37	19	in	in	ADP
aiti-8098	37	20	a	a	DET
aiti-8098	37	21	graphene	graphene	NOUN
aiti-8098	37	22	fet	fet	NOUN
aiti-8098	37	23	due	due	ADJ
aiti-8098	37	24	to	to	ADP
aiti-8098	37	25	which	which	PRON
aiti-8098	37	26	it	it	PRON
aiti-8098	37	27	becomes	become	VERB
aiti-8098	37	28	a	a	DET
aiti-8098	37	29	suitable	suitable	ADJ
aiti-8098	37	30	candidate	candidate	NOUN
aiti-8098	37	31	for	for	ADP
aiti-8098	37	32	digital	digital	ADJ
aiti-8098	37	33	applications	application	NOUN
aiti-8098	37	34	[	[	X
aiti-8098	37	35	3	3	NUM
aiti-8098	37	36	]	]	PUNCT
aiti-8098	37	37	.	.	PUNCT
aiti-8098	38	1	initially	initially	ADV
aiti-8098	38	2	,	,	PUNCT
aiti-8098	38	3	novoselov	novoselov	NOUN
aiti-8098	38	4	et	et	PROPN
aiti-8098	38	5	al	al	PROPN
aiti-8098	38	6	.	.	PUNCT
aiti-8098	39	1	[	[	X
aiti-8098	39	2	4	4	X
aiti-8098	39	3	]	]	PUNCT
aiti-8098	39	4	extracted	extract	VERB
aiti-8098	39	5	graphene	graphene	NOUN
aiti-8098	39	6	from	from	ADP
aiti-8098	39	7	carbon	carbon	NOUN
aiti-8098	39	8	and	and	CCONJ
aiti-8098	39	9	proposed	propose	VERB
aiti-8098	39	10	that	that	SCONJ
aiti-8098	39	11	graphene	graphene	NOUN
aiti-8098	39	12	could	could	AUX
aiti-8098	39	13	be	be	AUX
aiti-8098	39	14	the	the	DET
aiti-8098	39	15	best	good	ADJ
aiti-8098	39	16	possible	possible	ADJ
aiti-8098	39	17	metal	metal	NOUN
aiti-8098	39	18	for	for	ADP
aiti-8098	39	19	fet	fet	PROPN
aiti-8098	39	20	applications	application	NOUN
aiti-8098	39	21	.	.	PUNCT
aiti-8098	40	1	in	in	ADP
aiti-8098	40	2	addition	addition	NOUN
aiti-8098	40	3	to	to	ADP
aiti-8098	40	4	the	the	DET
aiti-8098	40	5	scalability	scalability	NOUN
aiti-8098	40	6	to	to	ADP
aiti-8098	40	7	true	true	ADJ
aiti-8098	40	8	nanometer	nanometer	NOUN
aiti-8098	40	9	sizes	size	NOUN
aiti-8098	40	10	,	,	PUNCT
aiti-8098	40	11	graphene	graphene	NOUN
aiti-8098	40	12	also	also	ADV
aiti-8098	40	13	offers	offer	VERB
aiti-8098	40	14	linear	linear	ADJ
aiti-8098	40	15	current	current	ADJ
aiti-8098	40	16	-	-	PUNCT
aiti-8098	40	17	voltage	voltage	NOUN
aiti-8098	40	18	(	(	PUNCT
aiti-8098	40	19	i	i	NOUN
aiti-8098	40	20	-	-	PUNCT
aiti-8098	40	21	v	v	NOUN
aiti-8098	40	22	)	)	PUNCT
aiti-8098	40	23	characteristics	characteristic	NOUN
aiti-8098	40	24	,	,	PUNCT
aiti-8098	40	25	ballistic	ballistic	ADJ
aiti-8098	40	26	transport	transport	NOUN
aiti-8098	40	27	,	,	PUNCT
aiti-8098	40	28	and	and	CCONJ
aiti-8098	40	29	huge	huge	ADJ
aiti-8098	40	30	sustainable	sustainable	ADJ
aiti-8098	40	31	currents	current	NOUN
aiti-8098	40	32	(	(	PUNCT
aiti-8098	40	33	9108	9108	NUM
aiti-8098	40	34	a	a	DET
aiti-8098	40	35	/	/	SYM
aiti-8098	40	36	cm2	cm2	NOUN
aiti-8098	40	37	)	)	PUNCT
aiti-8098	40	38	.	.	PUNCT
aiti-8098	41	1	graphene	graphene	NOUN
aiti-8098	41	2	transistors	transistor	NOUN
aiti-8098	41	3	show	show	VERB
aiti-8098	41	4	a	a	DET
aiti-8098	41	5	rather	rather	ADV
aiti-8098	41	6	modest	modest	ADJ
aiti-8098	41	7	on	on	ADP
aiti-8098	41	8	-	-	PUNCT
aiti-8098	41	9	off	off	NOUN
aiti-8098	41	10	resistance	resistance	NOUN
aiti-8098	41	11	ratio	ratio	NOUN
aiti-8098	41	12	,	,	PUNCT
aiti-8098	41	13	which	which	PRON
aiti-8098	41	14	is	be	AUX
aiti-8098	41	15	a	a	DET
aiti-8098	41	16	natural	natural	ADJ
aiti-8098	41	17	drawback	drawback	NOUN
aiti-8098	41	18	of	of	ADP
aiti-8098	41	19	a	a	DET
aiti-8098	41	20	material	material	NOUN
aiti-8098	41	21	having	have	VERB
aiti-8098	41	22	zero	zero	NUM
aiti-8098	41	23	bandgaps	bandgap	NOUN
aiti-8098	41	24	[	[	X
aiti-8098	41	25	4	4	NUM
aiti-8098	41	26	]	]	ADJ
aiti-8098	41	27	schwierz	schwierz	NOUN
aiti-8098	41	28	[	[	X
aiti-8098	41	29	5	5	NUM
aiti-8098	41	30	]	]	PUNCT
aiti-8098	41	31	focused	focus	VERB
aiti-8098	41	32	on	on	ADP
aiti-8098	41	33	graphene	graphene	NOUN
aiti-8098	41	34	transistors	transistor	NOUN
aiti-8098	41	35	’	'	PUNCT
aiti-8098	41	36	status	status	NOUN
aiti-8098	41	37	,	,	PUNCT
aiti-8098	41	38	prospects	prospect	NOUN
aiti-8098	41	39	,	,	PUNCT
aiti-8098	41	40	and	and	CCONJ
aiti-8098	41	41	problems	problem	NOUN
aiti-8098	41	42	.	.	PUNCT
aiti-8098	42	1	the	the	DET
aiti-8098	42	2	author	author	NOUN
aiti-8098	42	3	reported	report	VERB
aiti-8098	42	4	the	the	DET
aiti-8098	42	5	classification	classification	NOUN
aiti-8098	42	6	and	and	CCONJ
aiti-8098	42	7	detailed	detailed	ADJ
aiti-8098	42	8	analysis	analysis	NOUN
aiti-8098	42	9	of	of	ADP
aiti-8098	42	10	various	various	ADJ
aiti-8098	42	11	graphene	graphene	NOUN
aiti-8098	42	12	transistors	transistor	NOUN
aiti-8098	42	13	developed	develop	VERB
aiti-8098	42	14	in	in	ADP
aiti-8098	42	15	recent	recent	ADJ
aiti-8098	42	16	years	year	NOUN
aiti-8098	42	17	.	.	PUNCT
aiti-8098	43	1	the	the	DET
aiti-8098	43	2	challenge	challenge	NOUN
aiti-8098	43	3	of	of	ADP
aiti-8098	43	4	graphene	graphene	ADJ
aiti-8098	43	5	fets	fet	NOUN
aiti-8098	43	6	is	be	AUX
aiti-8098	43	7	the	the	DET
aiti-8098	43	8	opening	opening	NOUN
aiti-8098	43	9	of	of	ADP
aiti-8098	43	10	the	the	DET
aiti-8098	43	11	bandgap	bandgap	NOUN
aiti-8098	43	12	of	of	ADP
aiti-8098	43	13	the	the	DET
aiti-8098	43	14	defined	define	VERB
aiti-8098	43	15	size	size	NOUN
aiti-8098	43	16	and	and	CCONJ
aiti-8098	43	17	the	the	DET
aiti-8098	43	18	reliable	reliable	ADJ
aiti-8098	43	19	approach	approach	NOUN
aiti-8098	43	20	compatible	compatible	ADJ
aiti-8098	43	21	with	with	ADP
aiti-8098	43	22	standard	standard	ADJ
aiti-8098	43	23	semiconductor	semiconductor	NOUN
aiti-8098	43	24	processing	processing	NOUN
aiti-8098	43	25	steps	step	NOUN
aiti-8098	43	26	.	.	PUNCT
aiti-8098	44	1	for	for	ADP
aiti-8098	44	2	logic	logic	NOUN
aiti-8098	44	3	operations	operation	NOUN
aiti-8098	44	4	,	,	PUNCT
aiti-8098	44	5	a	a	DET
aiti-8098	44	6	bandgap	bandgap	NOUN
aiti-8098	44	7	of	of	ADP
aiti-8098	44	8	0.4	0.4	NUM
aiti-8098	44	9	ev	ev	ADP
aiti-8098	44	10	or	or	CCONJ
aiti-8098	44	11	more	more	ADJ
aiti-8098	44	12	will	will	AUX
aiti-8098	44	13	be	be	AUX
aiti-8098	44	14	required	require	VERB
aiti-8098	44	15	[	[	X
aiti-8098	44	16	5	5	NUM
aiti-8098	44	17	]	]	PUNCT
aiti-8098	44	18	.	.	PUNCT
aiti-8098	45	1	marmolejo	marmolejo	PROPN
aiti-8098	45	2	-	-	PUNCT
aiti-8098	45	3	tejada	tejada	PROPN
aiti-8098	45	4	et	et	PROPN
aiti-8098	45	5	al	al	PROPN
aiti-8098	45	6	.	.	PUNCT
aiti-8098	46	1	[	[	X
aiti-8098	46	2	6	6	NUM
aiti-8098	46	3	]	]	PUNCT
aiti-8098	46	4	presented	present	VERB
aiti-8098	46	5	a	a	DET
aiti-8098	46	6	study	study	NOUN
aiti-8098	46	7	of	of	ADP
aiti-8098	46	8	gnr	gnr	PROPN
aiti-8098	46	9	based	base	VERB
aiti-8098	46	10	fets	fet	NOUN
aiti-8098	46	11	.	.	PUNCT
aiti-8098	47	1	the	the	DET
aiti-8098	47	2	authors	author	NOUN
aiti-8098	47	3	concluded	conclude	VERB
aiti-8098	47	4	that	that	SCONJ
aiti-8098	47	5	gnr	gnr	PROPN
aiti-8098	47	6	-	-	PUNCT
aiti-8098	47	7	fets	fet	NOUN
aiti-8098	47	8	can	can	AUX
aiti-8098	47	9	be	be	AUX
aiti-8098	47	10	used	use	VERB
aiti-8098	47	11	for	for	ADP
aiti-8098	47	12	switching	switch	VERB
aiti-8098	47	13	applications	application	NOUN
aiti-8098	47	14	,	,	PUNCT
aiti-8098	47	15	and	and	CCONJ
aiti-8098	47	16	can	can	AUX
aiti-8098	47	17	offer	offer	VERB
aiti-8098	47	18	a	a	DET
aiti-8098	47	19	high	high	ADJ
aiti-8098	47	20	ion	ion	NOUN
aiti-8098	47	21	/	/	SYM
aiti-8098	47	22	ioff	ioff	NOUN
aiti-8098	47	23	ratio	ratio	NOUN
aiti-8098	47	24	and	and	CCONJ
aiti-8098	47	25	the	the	DET
aiti-8098	47	26	ss	ss	NOUN
aiti-8098	47	27	near	near	ADP
aiti-8098	47	28	its	its	PRON
aiti-8098	47	29	ideal	ideal	ADJ
aiti-8098	47	30	value	value	NOUN
aiti-8098	47	31	[	[	X
aiti-8098	47	32	6	6	NUM
aiti-8098	47	33	]	]	PUNCT
aiti-8098	47	34	.	.	PUNCT
aiti-8098	48	1	chen	chen	PROPN
aiti-8098	48	2	et	et	PROPN
aiti-8098	48	3	al	al	PROPN
aiti-8098	48	4	.	.	PUNCT
aiti-8098	49	1	[	[	X
aiti-8098	49	2	7	7	X
aiti-8098	49	3	]	]	PUNCT
aiti-8098	49	4	proposed	propose	VERB
aiti-8098	49	5	a	a	DET
aiti-8098	49	6	simulation	simulation	NOUN
aiti-8098	49	7	program	program	NOUN
aiti-8098	49	8	with	with	ADP
aiti-8098	49	9	integrated	integrate	VERB
aiti-8098	49	10	circuit	circuit	NOUN
aiti-8098	49	11	emphasis	emphasis	NOUN
aiti-8098	49	12	(	(	PUNCT
aiti-8098	49	13	spice	spice	NOUN
aiti-8098	49	14	)	)	PUNCT
aiti-8098	49	15	compatible	compatible	ADJ
aiti-8098	49	16	model	model	NOUN
aiti-8098	49	17	of	of	ADP
aiti-8098	49	18	mos	mos	PROPN
aiti-8098	49	19	type	type	NOUN
aiti-8098	49	20	gnr	gnr	NOUN
aiti-8098	49	21	-	-	PUNCT
aiti-8098	49	22	fets	fet	NOUN
aiti-8098	49	23	with	with	ADP
aiti-8098	49	24	doped	doped	ADJ
aiti-8098	49	25	reservoirs	reservoir	NOUN
aiti-8098	49	26	,	,	PUNCT
aiti-8098	49	27	currents	current	NOUN
aiti-8098	49	28	,	,	PUNCT
aiti-8098	49	29	and	and	CCONJ
aiti-8098	49	30	charge	charge	NOUN
aiti-8098	49	31	models	model	NOUN
aiti-8098	49	32	which	which	PRON
aiti-8098	49	33	closely	closely	ADV
aiti-8098	49	34	match	match	VERB
aiti-8098	49	35	with	with	ADP
aiti-8098	49	36	numerical	numerical	ADJ
aiti-8098	49	37	tcad	tcad	ADJ
aiti-8098	49	38	simulations	simulation	NOUN
aiti-8098	49	39	.	.	PUNCT
aiti-8098	50	1	they	they	PRON
aiti-8098	50	2	observed	observe	VERB
aiti-8098	50	3	that	that	SCONJ
aiti-8098	50	4	gnr	gnr	NOUN
aiti-8098	50	5	-	-	PUNCT
aiti-8098	50	6	fets	fet	NOUN
aiti-8098	50	7	are	be	AUX
aiti-8098	50	8	promising	promise	VERB
aiti-8098	50	9	compared	compare	VERB
aiti-8098	50	10	to	to	ADP
aiti-8098	50	11	silicon	silicon	NOUN
aiti-8098	50	12	complementary	complementary	ADJ
aiti-8098	50	13	metal	metal	NOUN
aiti-8098	50	14	oxide	oxide	NOUN
aiti-8098	50	15	semiconductors	semiconductor	NOUN
aiti-8098	50	16	(	(	PUNCT
aiti-8098	50	17	cmos	cmos	PROPN
aiti-8098	50	18	)	)	PUNCT
aiti-8098	50	19	since	since	SCONJ
aiti-8098	50	20	these	these	DET
aiti-8098	50	21	devices	device	NOUN
aiti-8098	50	22	have	have	VERB
aiti-8098	50	23	either	either	CCONJ
aiti-8098	50	24	lower	low	ADJ
aiti-8098	50	25	power	power	NOUN
aiti-8098	50	26	or	or	CCONJ
aiti-8098	50	27	lower	low	ADJ
aiti-8098	50	28	delay	delay	NOUN
aiti-8098	50	29	.	.	PUNCT
aiti-8098	51	1	gnr	gnr	NOUN
aiti-8098	51	2	-	-	PUNCT
aiti-8098	51	3	fets	fet	NOUN
aiti-8098	51	4	are	be	AUX
aiti-8098	51	5	still	still	ADV
aiti-8098	51	6	promising	promise	VERB
aiti-8098	51	7	candidates	candidate	NOUN
aiti-8098	51	8	for	for	ADP
aiti-8098	51	9	low	low	ADJ
aiti-8098	51	10	-	-	PUNCT
aiti-8098	51	11	power	power	NOUN
aiti-8098	51	12	applications	application	NOUN
aiti-8098	51	13	[	[	X
aiti-8098	51	14	7	7	NUM
aiti-8098	51	15	]	]	PUNCT
aiti-8098	51	16	.	.	PUNCT
aiti-8098	52	1	chen	chen	PROPN
aiti-8098	52	2	et	et	PROPN
aiti-8098	52	3	al	al	PROPN
aiti-8098	52	4	.	.	PUNCT
aiti-8098	53	1	[	[	X
aiti-8098	53	2	8	8	NUM
aiti-8098	53	3	]	]	PUNCT
aiti-8098	53	4	proposed	propose	VERB
aiti-8098	53	5	a	a	DET
aiti-8098	53	6	bi	bi	ADJ
aiti-8098	53	7	-	-	ADJ
aiti-8098	53	8	layer	layer	NOUN
aiti-8098	53	9	graphene	graphene	NOUN
aiti-8098	53	10	-	-	PUNCT
aiti-8098	53	11	based	base	VERB
aiti-8098	53	12	electrostatically	electrostatically	ADV
aiti-8098	53	13	doped	dope	VERB
aiti-8098	53	14	tunnel	tunnel	NOUN
aiti-8098	53	15	field	field	NOUN
aiti-8098	53	16	effect	effect	NOUN
aiti-8098	53	17	transistor	transistor	NOUN
aiti-8098	53	18	(	(	PUNCT
aiti-8098	53	19	bed	bed	NOUN
aiti-8098	53	20	-	-	PUNCT
aiti-8098	53	21	tfet	tfet	NOUN
aiti-8098	53	22	)	)	PUNCT
aiti-8098	53	23	,	,	PUNCT
aiti-8098	53	24	and	and	CCONJ
aiti-8098	53	25	studied	study	VERB
aiti-8098	53	26	the	the	DET
aiti-8098	53	27	operation	operation	NOUN
aiti-8098	53	28	principle	principle	NOUN
aiti-8098	53	29	of	of	ADP
aiti-8098	53	30	the	the	DET
aiti-8098	53	31	bed	bed	NOUN
aiti-8098	53	32	-	-	PUNCT
aiti-8098	53	33	tfet	tfet	NOUN
aiti-8098	53	34	and	and	CCONJ
aiti-8098	53	35	its	its	PRON
aiti-8098	53	36	performance	performance	NOUN
aiti-8098	53	37	sensitivity	sensitivity	NOUN
aiti-8098	53	38	to	to	ADP
aiti-8098	53	39	the	the	DET
aiti-8098	53	40	device	device	NOUN
aiti-8098	53	41	design	design	NOUN
aiti-8098	53	42	parameters	parameter	NOUN
aiti-8098	53	43	.	.	PUNCT
aiti-8098	54	1	agarwal	agarwal	PROPN
aiti-8098	54	2	et	et	PROPN
aiti-8098	54	3	al	al	PROPN
aiti-8098	54	4	.	.	PUNCT
aiti-8098	55	1	[	[	X
aiti-8098	55	2	9	9	NUM
aiti-8098	55	3	]	]	PUNCT
aiti-8098	55	4	proposed	propose	VERB
aiti-8098	55	5	a	a	DET
aiti-8098	55	6	bi	bi	ADJ
aiti-8098	55	7	-	-	ADJ
aiti-8098	55	8	layer	layer	NOUN
aiti-8098	55	9	graphene	graphene	NOUN
aiti-8098	55	10	tunneling	tunnel	VERB
aiti-8098	55	11	field	field	NOUN
aiti-8098	55	12	effect	effect	NOUN
aiti-8098	55	13	transistor	transistor	NOUN
aiti-8098	55	14	(	(	PUNCT
aiti-8098	55	15	blg	blg	NOUN
aiti-8098	55	16	-	-	PUNCT
aiti-8098	55	17	tfet	tfet	NOUN
aiti-8098	55	18	)	)	PUNCT
aiti-8098	55	19	suitable	suitable	ADJ
aiti-8098	55	20	for	for	ADP
aiti-8098	55	21	digital	digital	ADJ
aiti-8098	55	22	cmos	cmos	ADJ
aiti-8098	55	23	logic	logic	NOUN
aiti-8098	55	24	circuits	circuit	NOUN
aiti-8098	55	25	.	.	PUNCT
aiti-8098	56	1	a	a	DET
aiti-8098	56	2	bandgap	bandgap	NOUN
aiti-8098	56	3	opening	opening	NOUN
aiti-8098	56	4	is	be	AUX
aiti-8098	56	5	induced	induce	VERB
aiti-8098	56	6	in	in	ADP
aiti-8098	56	7	blg	blg	PROPN
aiti-8098	56	8	using	use	VERB
aiti-8098	56	9	both	both	CCONJ
aiti-8098	56	10	top	top	ADJ
aiti-8098	56	11	-	-	PUNCT
aiti-8098	56	12	bottom	bottom	NOUN
aiti-8098	56	13	asymmetric	asymmetric	ADJ
aiti-8098	56	14	chemical	chemical	NOUN
aiti-8098	56	15	doping	doping	NOUN
aiti-8098	56	16	and	and	CCONJ
aiti-8098	56	17	vertical	vertical	ADJ
aiti-8098	56	18	electric	electric	ADJ
aiti-8098	56	19	field	field	NOUN
aiti-8098	56	20	.	.	PUNCT
aiti-8098	57	1	the	the	DET
aiti-8098	57	2	proposed	propose	VERB
aiti-8098	57	3	blg	blg	PROPN
aiti-8098	57	4	-	-	PUNCT
aiti-8098	57	5	tfet	tfet	NOUN
aiti-8098	57	6	shows	show	VERB
aiti-8098	57	7	better	well	ADJ
aiti-8098	57	8	characteristics	characteristic	NOUN
aiti-8098	57	9	for	for	ADP
aiti-8098	57	10	ultralow	ultralow	ADJ
aiti-8098	57	11	-	-	PUNCT
aiti-8098	57	12	power	power	NOUN
aiti-8098	57	13	applications	application	NOUN
aiti-8098	57	14	,	,	PUNCT
aiti-8098	57	15	specifically	specifically	ADV
aiti-8098	57	16	in	in	ADP
aiti-8098	57	17	low	low	ADJ
aiti-8098	57	18	to	to	ADP
aiti-8098	57	19	medium	medium	ADJ
aiti-8098	57	20	-	-	PUNCT
aiti-8098	57	21	speed	speed	NOUN
aiti-8098	57	22	applications	application	NOUN
aiti-8098	57	23	[	[	X
aiti-8098	57	24	9	9	NUM
aiti-8098	57	25	]	]	PUNCT
aiti-8098	57	26	.	.	PUNCT
aiti-8098	58	1	lv	lv	PROPN
aiti-8098	58	2	et	et	PROPN
aiti-8098	58	3	al	al	PROPN
aiti-8098	58	4	.	.	PUNCT
aiti-8098	59	1	[	[	X
aiti-8098	59	2	10	10	NUM
aiti-8098	59	3	]	]	PUNCT
aiti-8098	59	4	proposed	propose	VERB
aiti-8098	59	5	segmented	segment	VERB
aiti-8098	59	6	edge	edge	NOUN
aiti-8098	59	7	saturation	saturation	NOUN
aiti-8098	59	8	(	(	PUNCT
aiti-8098	59	9	ses	ses	PROPN
aiti-8098	59	10	)	)	PUNCT
aiti-8098	59	11	as	as	ADP
aiti-8098	59	12	a	a	DET
aiti-8098	59	13	novel	novel	ADJ
aiti-8098	59	14	method	method	NOUN
aiti-8098	59	15	to	to	PART
aiti-8098	59	16	design	design	VERB
aiti-8098	59	17	high	high	ADJ
aiti-8098	59	18	-	-	PUNCT
aiti-8098	59	19	performance	performance	NOUN
aiti-8098	59	20	tfets	tfet	NOUN
aiti-8098	59	21	using	use	VERB
aiti-8098	59	22	smooth	smooth	ADJ
aiti-8098	59	23	gnr	gnr	NOUN
aiti-8098	59	24	.	.	PUNCT
aiti-8098	60	1	both	both	PRON
aiti-8098	60	2	high	high	ADJ
aiti-8098	60	3	on	on	ADP
aiti-8098	60	4	-	-	PUNCT
aiti-8098	60	5	to	to	ADP
aiti-8098	60	6	-	-	PUNCT
aiti-8098	60	7	off	off	ADP
aiti-8098	60	8	current	current	ADJ
aiti-8098	60	9	(	(	PUNCT
aiti-8098	60	10	ion	ion	NOUN
aiti-8098	60	11	/	/	SYM
aiti-8098	60	12	ioff	ioff	NOUN
aiti-8098	60	13	)	)	PUNCT
aiti-8098	60	14	ratio	ratio	NOUN
aiti-8098	60	15	and	and	CCONJ
aiti-8098	60	16	large	large	ADJ
aiti-8098	60	17	ion	ion	NOUN
aiti-8098	60	18	are	be	AUX
aiti-8098	60	19	obtained	obtain	VERB
aiti-8098	60	20	[	[	PUNCT
aiti-8098	60	21	10	10	NUM
aiti-8098	60	22	]	]	PUNCT
aiti-8098	60	23	.	.	PUNCT
aiti-8098	61	1	rassekh	rassekh	PROPN
aiti-8098	61	2	and	and	CCONJ
aiti-8098	61	3	fathipour	fathipour	VERB
aiti-8098	62	1	[	[	X
aiti-8098	62	2	11	11	NUM
aiti-8098	62	3	]	]	PUNCT
aiti-8098	62	4	reported	report	VERB
aiti-8098	62	5	a	a	DET
aiti-8098	62	6	junctionless	junctionless	ADJ
aiti-8098	62	7	transistor	transistor	NOUN
aiti-8098	62	8	(	(	PUNCT
aiti-8098	62	9	jlt	jlt	NOUN
aiti-8098	62	10	)	)	PUNCT
aiti-8098	62	11	at	at	ADP
aiti-8098	62	12	10	10	NUM
aiti-8098	62	13	nm	nm	PROPN
aiti-8098	62	14	gate	gate	NOUN
aiti-8098	62	15	length	length	NOUN
aiti-8098	62	16	,	,	PUNCT
aiti-8098	62	17	which	which	PRON
aiti-8098	62	18	is	be	AUX
aiti-8098	62	19	suitable	suitable	ADJ
aiti-8098	62	20	for	for	ADP
aiti-8098	62	21	low	low	ADJ
aiti-8098	62	22	power	power	NOUN
aiti-8098	62	23	applications	application	NOUN
aiti-8098	62	24	.	.	PUNCT
aiti-8098	63	1	the	the	DET
aiti-8098	63	2	authors	author	NOUN
aiti-8098	63	3	reported	report	VERB
aiti-8098	63	4	few	few	ADJ
aiti-8098	63	5	parameters	parameter	NOUN
aiti-8098	63	6	,	,	PUNCT
aiti-8098	63	7	i.e.	i.e.	X
aiti-8098	63	8	,	,	PUNCT
aiti-8098	63	9	ion	ion	NOUN
aiti-8098	63	10	/	/	SYM
aiti-8098	63	11	ioff	ioff	NOUN
aiti-8098	63	12	ratio	ratio	NOUN
aiti-8098	63	13	=	=	PUNCT
aiti-8098	63	14	4.2	4.2	NUM
aiti-8098	63	15	×	×	NOUN
aiti-8098	63	16	104	104	NUM
aiti-8098	63	17	,	,	PUNCT
aiti-8098	63	18	threshold	threshold	NOUN
aiti-8098	63	19	voltage	voltage	NOUN
aiti-8098	63	20	(	(	PUNCT
aiti-8098	63	21	vth	vth	NOUN
aiti-8098	63	22	)	)	PUNCT
aiti-8098	63	23	=	=	SYM
aiti-8098	63	24	327	327	NUM
aiti-8098	63	25	mv	mv	NOUN
aiti-8098	63	26	,	,	PUNCT
aiti-8098	63	27	dibl	dibl	PROPN
aiti-8098	64	1	=	=	SYM
aiti-8098	64	2	218	218	NUM
aiti-8098	64	3	mv	mv	PROPN
aiti-8098	64	4	/	/	SYM
aiti-8098	64	5	v	v	NOUN
aiti-8098	64	6	,	,	PUNCT
aiti-8098	64	7	ss	ss	NOUN
aiti-8098	64	8	=	=	PROPN
aiti-8098	65	1	109.9	109.9	NUM
aiti-8098	65	2	mv	mv	PROPN
aiti-8098	65	3	/	/	SYM
aiti-8098	65	4	dec	dec	PROPN
aiti-8098	65	5	.	.	PROPN
aiti-8098	65	6	,	,	PUNCT
aiti-8098	65	7	and	and	CCONJ
aiti-8098	65	8	the	the	DET
aiti-8098	65	9	comparison	comparison	NOUN
aiti-8098	65	10	is	be	AUX
aiti-8098	65	11	carried	carry	VERB
aiti-8098	65	12	out	out	ADP
aiti-8098	65	13	with	with	ADP
aiti-8098	65	14	silicon	silicon	NOUN
aiti-8098	65	15	-	-	PUNCT
aiti-8098	65	16	on	on	ADP
aiti-8098	65	17	-	-	PUNCT
aiti-8098	65	18	insulator	insulator	NOUN
aiti-8098	65	19	(	(	PUNCT
aiti-8098	65	20	soi	soi	ADJ
aiti-8098	65	21	)	)	PUNCT
aiti-8098	65	22	fin	fin	NOUN
aiti-8098	65	23	-	-	PUNCT
aiti-8098	65	24	shaped	shape	VERB
aiti-8098	65	25	field	field	NOUN
aiti-8098	65	26	effect	effect	NOUN
aiti-8098	65	27	20	20	NUM
aiti-8098	65	28	advances	advance	NOUN
aiti-8098	65	29	in	in	ADP
aiti-8098	65	30	technology	technology	NOUN
aiti-8098	65	31	innovation	innovation	NOUN
aiti-8098	65	32	,	,	PUNCT
aiti-8098	65	33	vol	vol	NOUN
aiti-8098	65	34	.	.	PROPN
aiti-8098	65	35	7	7	NUM
aiti-8098	65	36	,	,	PUNCT
aiti-8098	65	37	no	no	INTJ
aiti-8098	65	38	.	.	NOUN
aiti-8098	65	39	1	1	NUM
aiti-8098	65	40	,	,	PUNCT
aiti-8098	65	41	2022	2022	NUM
aiti-8098	65	42	,	,	PUNCT
aiti-8098	65	43	pp	pp	ADJ
aiti-8098	65	44	.	.	PUNCT
aiti-8098	65	45	19	19	NUM
aiti-8098	65	46	-	-	SYM
aiti-8098	65	47	29	29	NUM
aiti-8098	65	48	transistors	transistor	NOUN
aiti-8098	65	49	(	(	PUNCT
aiti-8098	65	50	finfets	finfet	NOUN
aiti-8098	65	51	)	)	PUNCT
aiti-8098	66	1	[	[	X
aiti-8098	66	2	11	11	NUM
aiti-8098	66	3	]	]	PUNCT
aiti-8098	66	4	.	.	PUNCT
aiti-8098	67	1	boukortt	boukortt	PROPN
aiti-8098	67	2	et	et	PROPN
aiti-8098	67	3	al	al	PROPN
aiti-8098	67	4	.	.	PUNCT
aiti-8098	68	1	[	[	X
aiti-8098	68	2	12	12	NUM
aiti-8098	68	3	]	]	PUNCT
aiti-8098	68	4	reported	report	VERB
aiti-8098	68	5	a	a	DET
aiti-8098	68	6	soi	soi	ADJ
aiti-8098	68	7	n	n	CCONJ
aiti-8098	68	8	-	-	PUNCT
aiti-8098	68	9	channel	channel	NOUN
aiti-8098	68	10	finfet	finfet	NOUN
aiti-8098	68	11	using	use	VERB
aiti-8098	68	12	the	the	DET
aiti-8098	68	13	silvaco	silvaco	ADJ
aiti-8098	68	14	tool	tool	NOUN
aiti-8098	68	15	at	at	ADP
aiti-8098	68	16	8	8	NUM
aiti-8098	68	17	nm	nm	NOUN
aiti-8098	68	18	gate	gate	NOUN
aiti-8098	68	19	length	length	NOUN
aiti-8098	68	20	,	,	PUNCT
aiti-8098	68	21	and	and	CCONJ
aiti-8098	68	22	demonstrated	demonstrate	VERB
aiti-8098	68	23	the	the	DET
aiti-8098	68	24	effects	effect	NOUN
aiti-8098	68	25	of	of	ADP
aiti-8098	68	26	gate	gate	NOUN
aiti-8098	68	27	work	work	NOUN
aiti-8098	68	28	function	function	NOUN
aiti-8098	68	29	on	on	ADP
aiti-8098	68	30	various	various	ADJ
aiti-8098	68	31	parameters	parameter	NOUN
aiti-8098	68	32	.	.	PUNCT
aiti-8098	69	1	the	the	DET
aiti-8098	69	2	authors	author	NOUN
aiti-8098	69	3	reported	report	VERB
aiti-8098	69	4	few	few	ADJ
aiti-8098	69	5	parameters	parameter	NOUN
aiti-8098	69	6	such	such	ADJ
aiti-8098	69	7	as	as	ADP
aiti-8098	69	8	ss	ss	NOUN
aiti-8098	69	9	=	=	PROPN
aiti-8098	69	10	63.13	63.13	NUM
aiti-8098	69	11	mv	mv	PROPN
aiti-8098	69	12	/	/	SYM
aiti-8098	69	13	dec	dec	PROPN
aiti-8098	69	14	,	,	PUNCT
aiti-8098	69	15	ion	ion	NOUN
aiti-8098	69	16	/	/	SYM
aiti-8098	69	17	ioff	ioff	NOUN
aiti-8098	69	18	ratio	ratio	NOUN
aiti-8098	69	19	=	=	SYM
aiti-8098	69	20	106	106	NUM
aiti-8098	69	21	,	,	PUNCT
aiti-8098	69	22	and	and	CCONJ
aiti-8098	69	23	dibl	dibl	PROPN
aiti-8098	69	24	=	=	SYM
aiti-8098	69	25	85.30	85.30	NUM
aiti-8098	69	26	mv	mv	PROPN
aiti-8098	69	27	/	/	SYM
aiti-8098	69	28	v	v	NOUN
aiti-8098	69	29	[	[	X
aiti-8098	69	30	12	12	NUM
aiti-8098	69	31	]	]	PUNCT
aiti-8098	69	32	.	.	PUNCT
aiti-8098	70	1	pravin	pravin	PROPN
aiti-8098	70	2	et	et	PROPN
aiti-8098	70	3	al	al	PROPN
aiti-8098	70	4	.	.	PUNCT
aiti-8098	71	1	[	[	X
aiti-8098	71	2	13	13	NUM
aiti-8098	71	3	]	]	PUNCT
aiti-8098	71	4	demonstrated	demonstrate	VERB
aiti-8098	71	5	the	the	DET
aiti-8098	71	6	effectiveness	effectiveness	NOUN
aiti-8098	71	7	of	of	ADP
aiti-8098	71	8	using	use	VERB
aiti-8098	71	9	a	a	DET
aiti-8098	71	10	high	high	ADJ
aiti-8098	71	11	-	-	PUNCT
aiti-8098	71	12	k	k	NOUN
aiti-8098	71	13	dielectric	dielectric	ADJ
aiti-8098	71	14	material	material	NOUN
aiti-8098	71	15	.	.	PUNCT
aiti-8098	72	1	the	the	DET
aiti-8098	72	2	authors	author	NOUN
aiti-8098	72	3	used	use	VERB
aiti-8098	72	4	hfo2	hfo2	NOUN
aiti-8098	72	5	material	material	NOUN
aiti-8098	72	6	as	as	ADP
aiti-8098	72	7	dielectrics	dielectric	NOUN
aiti-8098	72	8	instead	instead	ADV
aiti-8098	72	9	of	of	ADP
aiti-8098	72	10	sio2	sio2	PROPN
aiti-8098	72	11	.	.	PUNCT
aiti-8098	73	1	these	these	DET
aiti-8098	73	2	authors	author	NOUN
aiti-8098	73	3	observed	observe	VERB
aiti-8098	73	4	that	that	SCONJ
aiti-8098	73	5	dibl	dibl	PROPN
aiti-8098	73	6	is	be	AUX
aiti-8098	73	7	reduced	reduce	VERB
aiti-8098	73	8	by	by	ADP
aiti-8098	73	9	61.5	61.5	NUM
aiti-8098	73	10	%	%	NOUN
aiti-8098	73	11	,	,	PUNCT
aiti-8098	73	12	delay	delay	NOUN
aiti-8098	73	13	is	be	AUX
aiti-8098	73	14	reduced	reduce	VERB
aiti-8098	73	15	by	by	ADP
aiti-8098	73	16	4	4	NUM
aiti-8098	73	17	%	%	NOUN
aiti-8098	73	18	,	,	PUNCT
aiti-8098	73	19	and	and	CCONJ
aiti-8098	73	20	ion	ion	NOUN
aiti-8098	73	21	/	/	SYM
aiti-8098	73	22	ioff	ioff	NOUN
aiti-8098	73	23	ratio	ratio	NOUN
aiti-8098	73	24	is	be	AUX
aiti-8098	73	25	equal	equal	ADJ
aiti-8098	73	26	to	to	ADP
aiti-8098	73	27	109.[13	109.[13	NUM
aiti-8098	73	28	]	]	PUNCT
aiti-8098	73	29	.	.	PUNCT
aiti-8098	74	1	ning	ning	PROPN
aiti-8098	74	2	et	et	PROPN
aiti-8098	74	3	al	al	PROPN
aiti-8098	74	4	.	.	PUNCT
aiti-8098	75	1	[	[	X
aiti-8098	75	2	14	14	NUM
aiti-8098	75	3	]	]	PUNCT
aiti-8098	75	4	demonstrated	demonstrate	VERB
aiti-8098	75	5	a	a	DET
aiti-8098	75	6	flexible	flexible	ADJ
aiti-8098	75	7	fet	fet	NOUN
aiti-8098	75	8	using	use	VERB
aiti-8098	75	9	the	the	DET
aiti-8098	75	10	chemical	chemical	ADJ
aiti-8098	75	11	vapor	vapor	NOUN
aiti-8098	75	12	deposition	deposition	NOUN
aiti-8098	75	13	(	(	PUNCT
aiti-8098	75	14	cvd	cvd	NOUN
aiti-8098	75	15	)	)	PUNCT
aiti-8098	75	16	technique	technique	NOUN
aiti-8098	75	17	.	.	PUNCT
aiti-8098	76	1	the	the	DET
aiti-8098	76	2	proposed	propose	VERB
aiti-8098	76	3	fet	fet	NOUN
aiti-8098	76	4	exhibits	exhibit	VERB
aiti-8098	76	5	ion	ion	NOUN
aiti-8098	76	6	/	/	SYM
aiti-8098	76	7	ioff	ioff	NOUN
aiti-8098	76	8	ratio	ratio	NOUN
aiti-8098	76	9	=	=	NOUN
aiti-8098	76	10	400	400	NUM
aiti-8098	76	11	on	on	ADP
aiti-8098	76	12	a	a	DET
aiti-8098	76	13	bending	bend	VERB
aiti-8098	76	14	surface	surface	NOUN
aiti-8098	76	15	[	[	X
aiti-8098	76	16	14	14	NUM
aiti-8098	76	17	]	]	PUNCT
aiti-8098	76	18	.	.	PUNCT
aiti-8098	77	1	he	he	PRON
aiti-8098	77	2	et	et	PROPN
aiti-8098	77	3	al	al	PROPN
aiti-8098	77	4	.	.	PUNCT
aiti-8098	78	1	[	[	X
aiti-8098	78	2	15	15	NUM
aiti-8098	78	3	]	]	PUNCT
aiti-8098	78	4	studied	study	VERB
aiti-8098	78	5	the	the	DET
aiti-8098	78	6	temperature	temperature	NOUN
aiti-8098	78	7	effect	effect	NOUN
aiti-8098	78	8	on	on	ADP
aiti-8098	78	9	graphene	graphene	ADJ
aiti-8098	78	10	fets	fet	NOUN
aiti-8098	78	11	for	for	ADP
aiti-8098	78	12	rf	rf	NOUN
aiti-8098	78	13	applications	application	NOUN
aiti-8098	78	14	.	.	PUNCT
aiti-8098	79	1	the	the	DET
aiti-8098	79	2	authors	author	NOUN
aiti-8098	79	3	found	find	VERB
aiti-8098	79	4	that	that	SCONJ
aiti-8098	79	5	graphene	graphene	NOUN
aiti-8098	79	6	fets	fet	NOUN
aiti-8098	79	7	could	could	AUX
aiti-8098	79	8	be	be	AUX
aiti-8098	79	9	used	use	VERB
aiti-8098	79	10	up	up	ADP
aiti-8098	79	11	to	to	ADP
aiti-8098	79	12	200	200	NUM
aiti-8098	79	13	°	°	NOUN
aiti-8098	79	14	c	c	NOUN
aiti-8098	79	15	temperature	temperature	NOUN
aiti-8098	79	16	using	use	VERB
aiti-8098	79	17	sic	sic	ADJ
aiti-8098	79	18	substrates	substrate	NOUN
aiti-8098	79	19	[	[	X
aiti-8098	79	20	15	15	NUM
aiti-8098	79	21	]	]	PUNCT
aiti-8098	79	22	.	.	PUNCT
aiti-8098	80	1	tamersit	tamersit	NOUN
aiti-8098	80	2	and	and	CCONJ
aiti-8098	80	3	djeffal	djeffal	VERB
aiti-8098	81	1	[	[	X
aiti-8098	81	2	16	16	NUM
aiti-8098	81	3	]	]	PUNCT
aiti-8098	81	4	reported	report	VERB
aiti-8098	81	5	gnr	gnr	PROPN
aiti-8098	81	6	-	-	PUNCT
aiti-8098	81	7	fets	fet	NOUN
aiti-8098	81	8	using	use	VERB
aiti-8098	81	9	graded	grade	VERB
aiti-8098	81	10	gate	gate	PROPN
aiti-8098	81	11	engineering	engineering	NOUN
aiti-8098	81	12	.	.	PUNCT
aiti-8098	82	1	the	the	DET
aiti-8098	82	2	implemented	implement	VERB
aiti-8098	82	3	device	device	NOUN
aiti-8098	82	4	shows	show	VERB
aiti-8098	82	5	considerable	considerable	ADJ
aiti-8098	82	6	improvement	improvement	NOUN
aiti-8098	82	7	in	in	ADP
aiti-8098	82	8	ss	ss	NOUN
aiti-8098	82	9	,	,	PUNCT
aiti-8098	82	10	voltage	voltage	NOUN
aiti-8098	82	11	gain	gain	NOUN
aiti-8098	82	12	,	,	PUNCT
aiti-8098	82	13	and	and	CCONJ
aiti-8098	82	14	cutoff	cutoff	NOUN
aiti-8098	82	15	frequency	frequency	NOUN
aiti-8098	82	16	as	as	ADP
aiti-8098	82	17	compared	compare	VERB
aiti-8098	82	18	to	to	ADP
aiti-8098	82	19	normal	normal	ADJ
aiti-8098	82	20	gnr	gnr	NOUN
aiti-8098	82	21	-	-	PUNCT
aiti-8098	82	22	fets	fet	NOUN
aiti-8098	82	23	[	[	X
aiti-8098	82	24	16	16	NUM
aiti-8098	82	25	]	]	PUNCT
aiti-8098	82	26	.	.	PUNCT
aiti-8098	83	1	in	in	ADP
aiti-8098	83	2	another	another	DET
aiti-8098	83	3	implementation	implementation	NOUN
aiti-8098	83	4	,	,	PUNCT
aiti-8098	83	5	tamersit	tamersit	VERB
aiti-8098	83	6	[	[	X
aiti-8098	83	7	17	17	NUM
aiti-8098	83	8	]	]	PUNCT
aiti-8098	83	9	observed	observe	VERB
aiti-8098	83	10	that	that	SCONJ
aiti-8098	83	11	in	in	ADP
aiti-8098	83	12	gnr	gnr	PROPN
aiti-8098	83	13	-	-	PUNCT
aiti-8098	83	14	fets	fet	NOUN
aiti-8098	83	15	,	,	PUNCT
aiti-8098	83	16	short	short	ADJ
aiti-8098	83	17	channel	channel	NOUN
aiti-8098	83	18	parameters	parameter	NOUN
aiti-8098	83	19	can	can	AUX
aiti-8098	83	20	be	be	AUX
aiti-8098	83	21	improved	improve	VERB
aiti-8098	83	22	by	by	ADP
aiti-8098	83	23	using	use	VERB
aiti-8098	83	24	the	the	DET
aiti-8098	83	25	junctionless	junctionless	NOUN
aiti-8098	83	26	and	and	CCONJ
aiti-8098	83	27	multigate	multigate	PROPN
aiti-8098	83	28	technology	technology	NOUN
aiti-8098	83	29	.	.	PUNCT
aiti-8098	84	1	the	the	DET
aiti-8098	84	2	author	author	NOUN
aiti-8098	84	3	reported	report	VERB
aiti-8098	84	4	the	the	DET
aiti-8098	84	5	improvement	improvement	NOUN
aiti-8098	84	6	in	in	ADP
aiti-8098	84	7	ss	ss	PROPN
aiti-8098	84	8	,	,	PUNCT
aiti-8098	84	9	dibl	dibl	PROPN
aiti-8098	84	10	,	,	PUNCT
aiti-8098	84	11	and	and	CCONJ
aiti-8098	84	12	threshold	threshold	NOUN
aiti-8098	84	13	voltage	voltage	NOUN
aiti-8098	84	14	roll	roll	NOUN
aiti-8098	84	15	-	-	PUNCT
aiti-8098	84	16	off	off	NOUN
aiti-8098	84	17	[	[	X
aiti-8098	84	18	17	17	NUM
aiti-8098	84	19	]	]	PUNCT
aiti-8098	84	20	.	.	PUNCT
aiti-8098	85	1	radsar	radsar	VERB
aiti-8098	85	2	et	et	PROPN
aiti-8098	85	3	al	al	PROPN
aiti-8098	85	4	.	.	PUNCT
aiti-8098	86	1	[	[	X
aiti-8098	86	2	18	18	NUM
aiti-8098	86	3	]	]	PUNCT
aiti-8098	86	4	reported	report	VERB
aiti-8098	86	5	the	the	DET
aiti-8098	86	6	performance	performance	NOUN
aiti-8098	86	7	improvement	improvement	NOUN
aiti-8098	86	8	in	in	ADP
aiti-8098	86	9	gnr	gnr	NOUN
aiti-8098	86	10	-	-	PUNCT
aiti-8098	86	11	fets	fet	NOUN
aiti-8098	86	12	by	by	ADP
aiti-8098	86	13	changing	change	VERB
aiti-8098	86	14	the	the	DET
aiti-8098	86	15	gate	gate	NOUN
aiti-8098	86	16	dielectrics	dielectric	NOUN
aiti-8098	86	17	with	with	ADP
aiti-8098	86	18	high	high	ADJ
aiti-8098	86	19	dielectric	dielectric	ADJ
aiti-8098	86	20	coefficient	coefficient	NOUN
aiti-8098	86	21	material	material	NOUN
aiti-8098	86	22	lanthanum	lanthanum	NOUN
aiti-8098	86	23	aluminate	aluminate	NOUN
aiti-8098	86	24	.	.	PUNCT
aiti-8098	87	1	the	the	DET
aiti-8098	87	2	authors	author	NOUN
aiti-8098	87	3	observed	observe	VERB
aiti-8098	87	4	the	the	DET
aiti-8098	87	5	improvement	improvement	NOUN
aiti-8098	87	6	in	in	ADP
aiti-8098	87	7	ion	ion	NOUN
aiti-8098	87	8	/	/	SYM
aiti-8098	87	9	ioff	ioff	NOUN
aiti-8098	87	10	ratio	ratio	NOUN
aiti-8098	87	11	,	,	PUNCT
aiti-8098	87	12	ss	ss	PROPN
aiti-8098	87	13	,	,	PUNCT
aiti-8098	87	14	and	and	CCONJ
aiti-8098	87	15	dibl	dibl	VERB
aiti-8098	87	16	as	as	ADP
aiti-8098	87	17	compared	compare	VERB
aiti-8098	87	18	to	to	ADP
aiti-8098	87	19	other	other	ADJ
aiti-8098	87	20	dielectric	dielectric	ADJ
aiti-8098	87	21	materials	material	NOUN
aiti-8098	87	22	[	[	X
aiti-8098	87	23	18	18	NUM
aiti-8098	87	24	]	]	PUNCT
aiti-8098	87	25	.	.	PUNCT
aiti-8098	88	1	fahad	fahad	PROPN
aiti-8098	88	2	et	et	PROPN
aiti-8098	88	3	al	al	PROPN
aiti-8098	88	4	.	.	PUNCT
aiti-8098	89	1	[	[	X
aiti-8098	89	2	19	19	NUM
aiti-8098	89	3	]	]	PUNCT
aiti-8098	89	4	solved	solve	VERB
aiti-8098	89	5	analytical	analytical	ADJ
aiti-8098	89	6	models	model	NOUN
aiti-8098	89	7	from	from	ADP
aiti-8098	89	8	gnr	gnr	PROPN
aiti-8098	89	9	-	-	PUNCT
aiti-8098	89	10	tfets	tfet	NOUN
aiti-8098	89	11	using	use	VERB
aiti-8098	89	12	schrodinger	schrodinger	PROPN
aiti-8098	89	13	equations	equation	NOUN
aiti-8098	89	14	.	.	PUNCT
aiti-8098	90	1	the	the	DET
aiti-8098	90	2	designed	design	VERB
aiti-8098	90	3	form	form	NOUN
aiti-8098	90	4	channel	channel	NOUN
aiti-8098	90	5	length	length	NOUN
aiti-8098	90	6	is	be	AUX
aiti-8098	90	7	20	20	NUM
aiti-8098	90	8	nm	nm	NOUN
aiti-8098	90	9	.	.	PUNCT
aiti-8098	91	1	the	the	DET
aiti-8098	91	2	authors	author	NOUN
aiti-8098	91	3	found	find	VERB
aiti-8098	91	4	close	close	ADJ
aiti-8098	91	5	agreement	agreement	NOUN
aiti-8098	91	6	of	of	ADP
aiti-8098	91	7	ion	ion	NOUN
aiti-8098	91	8	/	/	SYM
aiti-8098	91	9	ioff	ioff	NOUN
aiti-8098	91	10	ratio	ratio	NOUN
aiti-8098	91	11	and	and	CCONJ
aiti-8098	91	12	ss	ss	VERB
aiti-8098	91	13	with	with	ADP
aiti-8098	91	14	a	a	DET
aiti-8098	91	15	numerical	numerical	ADJ
aiti-8098	91	16	quantum	quantum	ADJ
aiti-8098	91	17	simulation	simulation	NOUN
aiti-8098	91	18	method	method	NOUN
aiti-8098	91	19	[	[	X
aiti-8098	91	20	19	19	NUM
aiti-8098	91	21	]	]	PUNCT
aiti-8098	91	22	.	.	PUNCT
aiti-8098	92	1	the	the	DET
aiti-8098	92	2	graphene	graphene	NOUN
aiti-8098	92	3	and	and	CCONJ
aiti-8098	92	4	sio2	sio2	PROPN
aiti-8098	92	5	oxide	oxide	NOUN
aiti-8098	92	6	interface	interface	NOUN
aiti-8098	92	7	can	can	AUX
aiti-8098	92	8	also	also	ADV
aiti-8098	92	9	degrade	degrade	VERB
aiti-8098	92	10	the	the	DET
aiti-8098	92	11	performance	performance	NOUN
aiti-8098	92	12	of	of	ADP
aiti-8098	92	13	the	the	DET
aiti-8098	92	14	device	device	NOUN
aiti-8098	92	15	due	due	ADP
aiti-8098	92	16	to	to	ADP
aiti-8098	92	17	the	the	DET
aiti-8098	92	18	mismatch	mismatch	NOUN
aiti-8098	92	19	of	of	ADP
aiti-8098	92	20	structure	structure	NOUN
aiti-8098	92	21	and	and	CCONJ
aiti-8098	92	22	tunneling	tunneling	NOUN
aiti-8098	92	23	of	of	ADP
aiti-8098	92	24	hot	hot	ADJ
aiti-8098	92	25	electrons	electron	NOUN
aiti-8098	92	26	into	into	ADP
aiti-8098	92	27	the	the	DET
aiti-8098	92	28	oxide	oxide	NOUN
aiti-8098	92	29	[	[	X
aiti-8098	92	30	20	20	NUM
aiti-8098	92	31	]	]	PUNCT
aiti-8098	92	32	.	.	PUNCT
aiti-8098	93	1	it	it	PRON
aiti-8098	93	2	leads	lead	VERB
aiti-8098	93	3	to	to	ADP
aiti-8098	93	4	the	the	DET
aiti-8098	93	5	degradation	degradation	NOUN
aiti-8098	93	6	of	of	ADP
aiti-8098	93	7	drain	drain	NOUN
aiti-8098	93	8	current	current	ADJ
aiti-8098	93	9	(	(	PUNCT
aiti-8098	93	10	i	i	NOUN
aiti-8098	93	11	d	d	PROPN
aiti-8098	93	12	)	)	PUNCT
aiti-8098	93	13	and	and	CCONJ
aiti-8098	93	14	vth	vth	VERB
aiti-8098	93	15	.	.	PUNCT
aiti-8098	94	1	hence	hence	ADV
aiti-8098	94	2	,	,	PUNCT
aiti-8098	94	3	to	to	PART
aiti-8098	94	4	improve	improve	VERB
aiti-8098	94	5	these	these	DET
aiti-8098	94	6	parameters	parameter	NOUN
aiti-8098	94	7	,	,	PUNCT
aiti-8098	94	8	it	it	PRON
aiti-8098	94	9	is	be	AUX
aiti-8098	94	10	proposed	propose	VERB
aiti-8098	94	11	that	that	SCONJ
aiti-8098	94	12	the	the	DET
aiti-8098	94	13	use	use	NOUN
aiti-8098	94	14	of	of	ADP
aiti-8098	94	15	hfo2	hfo2	NOUN
aiti-8098	94	16	having	have	VERB
aiti-8098	94	17	high	high	ADJ
aiti-8098	94	18	-	-	PUNCT
aiti-8098	94	19	k	k	NOUN
aiti-8098	94	20	could	could	AUX
aiti-8098	94	21	be	be	AUX
aiti-8098	94	22	a	a	DET
aiti-8098	94	23	suitable	suitable	ADJ
aiti-8098	94	24	material	material	NOUN
aiti-8098	94	25	as	as	ADP
aiti-8098	94	26	an	an	DET
aiti-8098	94	27	oxide	oxide	NOUN
aiti-8098	94	28	[	[	X
aiti-8098	94	29	21	21	NUM
aiti-8098	94	30	]	]	PUNCT
aiti-8098	94	31	.	.	PUNCT
aiti-8098	95	1	for	for	ADP
aiti-8098	95	2	the	the	DET
aiti-8098	95	3	fabrication	fabrication	NOUN
aiti-8098	95	4	of	of	ADP
aiti-8098	95	5	graphene	graphene	ADJ
aiti-8098	95	6	layers	layer	NOUN
aiti-8098	95	7	on	on	ADP
aiti-8098	95	8	silicon	silicon	NOUN
aiti-8098	95	9	substrates	substrate	NOUN
aiti-8098	95	10	,	,	PUNCT
aiti-8098	95	11	a	a	DET
aiti-8098	95	12	rapid	rapid	ADJ
aiti-8098	95	13	cvd	cvd	NOUN
aiti-8098	95	14	system	system	NOUN
aiti-8098	95	15	is	be	AUX
aiti-8098	95	16	used	use	VERB
aiti-8098	95	17	.	.	PUNCT
aiti-8098	96	1	using	use	VERB
aiti-8098	96	2	this	this	DET
aiti-8098	96	3	system	system	NOUN
aiti-8098	96	4	,	,	PUNCT
aiti-8098	96	5	a	a	DET
aiti-8098	96	6	graphene	graphene	NOUN
aiti-8098	96	7	layer	layer	NOUN
aiti-8098	96	8	having	have	VERB
aiti-8098	96	9	the	the	DET
aiti-8098	96	10	thickness	thickness	NOUN
aiti-8098	96	11	in	in	ADP
aiti-8098	96	12	2	2	NUM
aiti-8098	96	13	to	to	PART
aiti-8098	96	14	3	3	NUM
aiti-8098	96	15	nm	nm	NOUN
aiti-8098	96	16	can	can	AUX
aiti-8098	96	17	be	be	AUX
aiti-8098	96	18	formed	form	VERB
aiti-8098	96	19	.	.	PUNCT
aiti-8098	97	1	this	this	PRON
aiti-8098	97	2	represents	represent	VERB
aiti-8098	97	3	that	that	SCONJ
aiti-8098	97	4	the	the	DET
aiti-8098	97	5	layer	layer	NOUN
aiti-8098	97	6	of	of	ADP
aiti-8098	97	7	graphene	graphene	ADJ
aiti-8098	97	8	material	material	NOUN
aiti-8098	97	9	on	on	ADP
aiti-8098	97	10	the	the	DET
aiti-8098	97	11	silicon	silicon	NOUN
aiti-8098	97	12	substrate	substrate	NOUN
aiti-8098	97	13	offers	offer	VERB
aiti-8098	97	14	the	the	DET
aiti-8098	97	15	expected	expect	VERB
aiti-8098	97	16	mobility	mobility	NOUN
aiti-8098	97	17	for	for	ADP
aiti-8098	97	18	graphene	graphene	ADJ
aiti-8098	97	19	channel	channel	NOUN
aiti-8098	97	20	fets	fet	NOUN
aiti-8098	97	21	.	.	PUNCT
aiti-8098	98	1	the	the	DET
aiti-8098	98	2	rapid	rapid	ADJ
aiti-8098	98	3	cvd	cvd	PROPN
aiti-8098	98	4	fabricated	fabricate	VERB
aiti-8098	98	5	the	the	DET
aiti-8098	98	6	graphene	graphene	NOUN
aiti-8098	98	7	material	material	NOUN
aiti-8098	98	8	to	to	PART
aiti-8098	98	9	be	be	AUX
aiti-8098	98	10	used	use	VERB
aiti-8098	98	11	as	as	ADP
aiti-8098	98	12	channel	channel	NOUN
aiti-8098	98	13	material	material	NOUN
aiti-8098	98	14	,	,	PUNCT
aiti-8098	98	15	which	which	PRON
aiti-8098	98	16	is	be	AUX
aiti-8098	98	17	equivalent	equivalent	ADJ
aiti-8098	98	18	to	to	ADP
aiti-8098	98	19	1	1	NUM
aiti-8098	98	20	nm	nm	PRON
aiti-8098	98	21	atomic	atomic	ADJ
aiti-8098	98	22	thick	thick	ADJ
aiti-8098	98	23	layer	layer	NOUN
aiti-8098	98	24	.	.	PUNCT
aiti-8098	99	1	with	with	ADP
aiti-8098	99	2	reference	reference	NOUN
aiti-8098	99	3	to	to	ADP
aiti-8098	99	4	this	this	PRON
aiti-8098	99	5	,	,	PUNCT
aiti-8098	99	6	in	in	ADP
aiti-8098	99	7	the	the	DET
aiti-8098	99	8	proposed	propose	VERB
aiti-8098	99	9	research	research	NOUN
aiti-8098	99	10	work	work	NOUN
aiti-8098	99	11	,	,	PUNCT
aiti-8098	99	12	the	the	DET
aiti-8098	99	13	graphene	graphene	NOUN
aiti-8098	99	14	material	material	NOUN
aiti-8098	99	15	thickness	thickness	NOUN
aiti-8098	99	16	is	be	AUX
aiti-8098	99	17	considered	consider	VERB
aiti-8098	99	18	to	to	PART
aiti-8098	99	19	be	be	AUX
aiti-8098	99	20	1.5	1.5	NUM
aiti-8098	99	21	to	to	PART
aiti-8098	99	22	2	2	NUM
aiti-8098	99	23	nm	nm	NOUN
aiti-8098	99	24	[	[	X
aiti-8098	99	25	22	22	NUM
aiti-8098	99	26	]	]	PUNCT
aiti-8098	99	27	.	.	PUNCT
aiti-8098	100	1	3	3	X
aiti-8098	100	2	.	.	X
aiti-8098	100	3	design	design	NOUN
aiti-8098	100	4	methodology	methodology	NOUN
aiti-8098	100	5	the	the	DET
aiti-8098	100	6	i	i	PROPN
aiti-8098	100	7	d	d	PROPN
aiti-8098	100	8	of	of	ADP
aiti-8098	100	9	conventional	conventional	ADJ
aiti-8098	100	10	mosfets	mosfet	NOUN
aiti-8098	100	11	depends	depend	VERB
aiti-8098	100	12	on	on	ADP
aiti-8098	100	13	various	various	ADJ
aiti-8098	100	14	parameters	parameter	NOUN
aiti-8098	100	15	.	.	PUNCT
aiti-8098	101	1	as	as	ADP
aiti-8098	101	2	per	per	ADP
aiti-8098	101	3	eq	eq	NOUN
aiti-8098	101	4	.	.	PUNCT
aiti-8098	102	1	(	(	PUNCT
aiti-8098	102	2	1	1	NUM
aiti-8098	102	3	)	)	PUNCT
aiti-8098	102	4	,	,	PUNCT
aiti-8098	102	5	it	it	PRON
aiti-8098	102	6	is	be	AUX
aiti-8098	102	7	observed	observe	VERB
aiti-8098	102	8	that	that	SCONJ
aiti-8098	102	9	i	i	PRON
aiti-8098	102	10	d	d	PROPN
aiti-8098	102	11	is	be	AUX
aiti-8098	102	12	directly	directly	ADV
aiti-8098	102	13	proportional	proportional	ADJ
aiti-8098	102	14	to	to	ADP
aiti-8098	102	15	the	the	DET
aiti-8098	102	16	mobility	mobility	NOUN
aiti-8098	102	17	of	of	ADP
aiti-8098	102	18	electrons	electron	NOUN
aiti-8098	102	19	(	(	PUNCT
aiti-8098	102	20	µn	µn	NOUN
aiti-8098	102	21	)	)	PUNCT
aiti-8098	102	22	and	and	CCONJ
aiti-8098	102	23	applied	apply	VERB
aiti-8098	102	24	drain	drain	NOUN
aiti-8098	102	25	-	-	PUNCT
aiti-8098	102	26	source	source	NOUN
aiti-8098	102	27	voltage	voltage	NOUN
aiti-8098	102	28	(	(	PUNCT
aiti-8098	102	29	vds	vds	NOUN
aiti-8098	102	30	)	)	PUNCT
aiti-8098	102	31	for	for	ADP
aiti-8098	102	32	n	n	CCONJ
aiti-8098	102	33	-	-	PUNCT
aiti-8098	102	34	channel	channel	NOUN
aiti-8098	102	35	mosfets	mosfet	NOUN
aiti-8098	102	36	.	.	PUNCT
aiti-8098	103	1	i	i	PRON
aiti-8098	103	2	d	d	PROPN
aiti-8098	103	3	is	be	AUX
aiti-8098	103	4	inversely	inversely	ADV
aiti-8098	103	5	proportional	proportional	ADJ
aiti-8098	103	6	to	to	ADP
aiti-8098	103	7	the	the	DET
aiti-8098	103	8	channel	channel	NOUN
aiti-8098	103	9	length	length	NOUN
aiti-8098	103	10	(	(	PUNCT
aiti-8098	103	11	l	l	NOUN
aiti-8098	103	12	)	)	PUNCT
aiti-8098	103	13	.	.	PUNCT
aiti-8098	104	1	when	when	SCONJ
aiti-8098	104	2	scaling	scaling	NOUN
aiti-8098	104	3	of	of	ADP
aiti-8098	104	4	mosfets	mosfet	NOUN
aiti-8098	104	5	is	be	AUX
aiti-8098	104	6	carried	carry	VERB
aiti-8098	104	7	out	out	ADP
aiti-8098	104	8	at	at	ADP
aiti-8098	104	9	that	that	DET
aiti-8098	104	10	time	time	NOUN
aiti-8098	104	11	,	,	PUNCT
aiti-8098	104	12	the	the	DET
aiti-8098	104	13	channel	channel	NOUN
aiti-8098	104	14	length	length	NOUN
aiti-8098	104	15	is	be	AUX
aiti-8098	104	16	reduced	reduce	VERB
aiti-8098	104	17	in	in	ADP
aiti-8098	104	18	nanometer	nanometer	NOUN
aiti-8098	104	19	size	size	NOUN
aiti-8098	104	20	and	and	CCONJ
aiti-8098	104	21	vds	vds	NOUN
aiti-8098	104	22	is	be	AUX
aiti-8098	104	23	also	also	ADV
aiti-8098	104	24	reduced	reduce	VERB
aiti-8098	104	25	.	.	PUNCT
aiti-8098	105	1	due	due	ADP
aiti-8098	105	2	to	to	ADP
aiti-8098	105	3	the	the	DET
aiti-8098	105	4	reduction	reduction	NOUN
aiti-8098	105	5	in	in	ADP
aiti-8098	105	6	vds	vds	PROPN
aiti-8098	105	7	,	,	PUNCT
aiti-8098	105	8	the	the	DET
aiti-8098	105	9	overall	overall	ADJ
aiti-8098	105	10	power	power	NOUN
aiti-8098	105	11	consumption	consumption	NOUN
aiti-8098	105	12	of	of	ADP
aiti-8098	105	13	the	the	DET
aiti-8098	105	14	device	device	NOUN
aiti-8098	105	15	reduces	reduce	VERB
aiti-8098	105	16	,	,	PUNCT
aiti-8098	105	17	and	and	CCONJ
aiti-8098	105	18	i	i	PRON
aiti-8098	105	19	d	d	PROPN
aiti-8098	105	20	also	also	ADV
aiti-8098	105	21	degrades	degrade	VERB
aiti-8098	105	22	.	.	PUNCT
aiti-8098	106	1	hence	hence	ADV
aiti-8098	106	2	,	,	PUNCT
aiti-8098	106	3	to	to	PART
aiti-8098	106	4	improve	improve	VERB
aiti-8098	106	5	i	i	PROPN
aiti-8098	106	6	d	d	PROPN
aiti-8098	106	7	,	,	PUNCT
aiti-8098	106	8	the	the	DET
aiti-8098	106	9	mobility	mobility	NOUN
aiti-8098	106	10	of	of	ADP
aiti-8098	106	11	electrons	electron	NOUN
aiti-8098	106	12	can	can	AUX
aiti-8098	106	13	be	be	AUX
aiti-8098	106	14	increased	increase	VERB
aiti-8098	106	15	,	,	PUNCT
aiti-8098	106	16	but	but	CCONJ
aiti-8098	106	17	the	the	DET
aiti-8098	106	18	mobility	mobility	NOUN
aiti-8098	106	19	of	of	ADP
aiti-8098	106	20	silicon	silicon	NOUN
aiti-8098	106	21	material	material	NOUN
aiti-8098	106	22	is	be	AUX
aiti-8098	106	23	limited	limited	ADJ
aiti-8098	106	24	.	.	PUNCT
aiti-8098	107	1	to	to	PART
aiti-8098	107	2	increase	increase	VERB
aiti-8098	107	3	the	the	DET
aiti-8098	107	4	mobility	mobility	NOUN
aiti-8098	107	5	,	,	PUNCT
aiti-8098	107	6	a	a	DET
aiti-8098	107	7	new	new	ADJ
aiti-8098	107	8	promising	promising	ADJ
aiti-8098	107	9	material	material	NOUN
aiti-8098	107	10	graphene	graphene	NOUN
aiti-8098	107	11	is	be	AUX
aiti-8098	107	12	used	use	VERB
aiti-8098	107	13	in	in	ADP
aiti-8098	107	14	this	this	DET
aiti-8098	107	15	design	design	NOUN
aiti-8098	107	16	,	,	PUNCT
aiti-8098	107	17	which	which	PRON
aiti-8098	107	18	has	have	VERB
aiti-8098	107	19	a	a	DET
aiti-8098	107	20	mobility	mobility	NOUN
aiti-8098	107	21	of	of	ADP
aiti-8098	107	22	30000	30000	NUM
aiti-8098	107	23	cm2	cm2	NOUN
aiti-8098	107	24	/	/	SYM
aiti-8098	107	25	v.s.	v.s.	NOUN
aiti-8098	107	26	due	due	ADP
aiti-8098	107	27	to	to	ADP
aiti-8098	107	28	the	the	DET
aiti-8098	107	29	increase	increase	NOUN
aiti-8098	107	30	in	in	ADP
aiti-8098	107	31	mobility	mobility	NOUN
aiti-8098	107	32	,	,	PUNCT
aiti-8098	107	33	the	the	DET
aiti-8098	107	34	performance	performance	NOUN
aiti-8098	107	35	of	of	ADP
aiti-8098	107	36	the	the	DET
aiti-8098	107	37	device	device	NOUN
aiti-8098	107	38	can	can	AUX
aiti-8098	107	39	be	be	AUX
aiti-8098	107	40	improved	improve	VERB
aiti-8098	107	41	.	.	PUNCT
aiti-8098	108	1	the	the	DET
aiti-8098	108	2	short	short	ADJ
aiti-8098	108	3	channel	channel	NOUN
aiti-8098	108	4	parameter	parameter	NOUN
aiti-8098	108	5	ss	ss	PROPN
aiti-8098	108	6	is	be	AUX
aiti-8098	108	7	directly	directly	ADV
aiti-8098	108	8	proportional	proportional	ADJ
aiti-8098	108	9	to	to	ADP
aiti-8098	108	10	depletion	depletion	NOUN
aiti-8098	108	11	capacitance	capacitance	NOUN
aiti-8098	108	12	(	(	PUNCT
aiti-8098	108	13	cd	cd	PROPN
aiti-8098	108	14	)	)	PUNCT
aiti-8098	108	15	and	and	CCONJ
aiti-8098	108	16	inversely	inversely	ADV
aiti-8098	108	17	proportional	proportional	ADJ
aiti-8098	108	18	to	to	PART
aiti-8098	108	19	oxide	oxide	NOUN
aiti-8098	108	20	capacitance	capacitance	NOUN
aiti-8098	108	21	(	(	PUNCT
aiti-8098	108	22	cox	cox	PROPN
aiti-8098	108	23	)	)	PUNCT
aiti-8098	108	24	as	as	ADP
aiti-8098	108	25	per	per	ADP
aiti-8098	108	26	eq	eq	NOUN
aiti-8098	108	27	.	.	PUNCT
aiti-8098	109	1	(	(	PUNCT
aiti-8098	109	2	2	2	NUM
aiti-8098	109	3	)	)	PUNCT
aiti-8098	109	4	.	.	PUNCT
aiti-8098	110	1	to	to	PART
aiti-8098	110	2	improve	improve	VERB
aiti-8098	110	3	ss	ss	NOUN
aiti-8098	110	4	to	to	ADP
aiti-8098	110	5	its	its	PRON
aiti-8098	110	6	ideal	ideal	ADJ
aiti-8098	110	7	value	value	NOUN
aiti-8098	110	8	of	of	ADP
aiti-8098	110	9	60	60	NUM
aiti-8098	110	10	mv	mv	PROPN
aiti-8098	110	11	/	/	SYM
aiti-8098	110	12	dec	dec	PROPN
aiti-8098	110	13	.	.	PROPN
aiti-8098	110	14	,	,	PUNCT
aiti-8098	110	15	cox	cox	PROPN
aiti-8098	110	16	can	can	AUX
aiti-8098	110	17	be	be	AUX
aiti-8098	110	18	reduced	reduce	VERB
aiti-8098	110	19	by	by	ADP
aiti-8098	110	20	changing	change	VERB
aiti-8098	110	21	the	the	DET
aiti-8098	110	22	dielectric	dielectric	ADJ
aiti-8098	110	23	material	material	NOUN
aiti-8098	110	24	used	use	VERB
aiti-8098	110	25	under	under	ADP
aiti-8098	110	26	the	the	DET
aiti-8098	110	27	gate	gate	PROPN
aiti-8098	110	28	terminal	terminal	NOUN
aiti-8098	110	29	.	.	PUNCT
aiti-8098	111	1	in	in	ADP
aiti-8098	111	2	this	this	DET
aiti-8098	111	3	design	design	NOUN
aiti-8098	111	4	,	,	PUNCT
aiti-8098	111	5	hfo2	hfo2	NOUN
aiti-8098	111	6	,	,	PUNCT
aiti-8098	111	7	the	the	DET
aiti-8098	111	8	dielectric	dielectric	ADJ
aiti-8098	111	9	material	material	NOUN
aiti-8098	111	10	is	be	AUX
aiti-8098	111	11	used	use	VERB
aiti-8098	111	12	to	to	PART
aiti-8098	111	13	improve	improve	VERB
aiti-8098	111	14	ss	ss	NOUN
aiti-8098	111	15	.	.	PUNCT
aiti-8098	112	1	the	the	DET
aiti-8098	112	2	improvement	improvement	NOUN
aiti-8098	112	3	in	in	ADP
aiti-8098	112	4	ss	ss	NOUN
aiti-8098	112	5	also	also	ADV
aiti-8098	112	6	improves	improve	VERB
aiti-8098	112	7	the	the	DET
aiti-8098	112	8	ion	ion	NOUN
aiti-8098	112	9	/	/	SYM
aiti-8098	112	10	ioff	ioff	NOUN
aiti-8098	112	11	ratio	ratio	NOUN
aiti-8098	112	12	of	of	ADP
aiti-8098	112	13	the	the	DET
aiti-8098	112	14	device	device	NOUN
aiti-8098	112	15	,	,	PUNCT
aiti-8098	112	16	which	which	PRON
aiti-8098	112	17	is	be	AUX
aiti-8098	112	18	an	an	DET
aiti-8098	112	19	essential	essential	ADJ
aiti-8098	112	20	factor	factor	NOUN
aiti-8098	112	21	for	for	ADP
aiti-8098	112	22	the	the	DET
aiti-8098	112	23	digital	digital	ADJ
aiti-8098	112	24	logic	logic	NOUN
aiti-8098	112	25	application	application	NOUN
aiti-8098	112	26	of	of	ADP
aiti-8098	112	27	the	the	DET
aiti-8098	112	28	device	device	NOUN
aiti-8098	112	29	and	and	CCONJ
aiti-8098	112	30	low	low	ADJ
aiti-8098	112	31	power	power	NOUN
aiti-8098	112	32	consumption	consumption	NOUN
aiti-8098	112	33	.	.	PUNCT
aiti-8098	113	1	dibl	dibl	PROPN
aiti-8098	113	2	is	be	AUX
aiti-8098	113	3	another	another	DET
aiti-8098	113	4	short	short	ADJ
aiti-8098	113	5	channel	channel	NOUN
aiti-8098	113	6	effect	effect	NOUN
aiti-8098	113	7	that	that	PRON
aiti-8098	113	8	depends	depend	VERB
aiti-8098	113	9	on	on	ADP
aiti-8098	113	10	vds	vds	PROPN
aiti-8098	113	11	and	and	CCONJ
aiti-8098	113	12	vth	vth	NOUN
aiti-8098	113	13	as	as	ADP
aiti-8098	113	14	per	per	ADP
aiti-8098	113	15	eq	eq	NOUN
aiti-8098	113	16	.	.	PUNCT
aiti-8098	114	1	(	(	PUNCT
aiti-8098	114	2	3	3	NUM
aiti-8098	114	3	)	)	PUNCT
aiti-8098	114	4	.	.	PUNCT
aiti-8098	115	1	dibl	dibl	PROPN
aiti-8098	115	2	can	can	AUX
aiti-8098	115	3	be	be	AUX
aiti-8098	115	4	controlled	control	VERB
aiti-8098	115	5	by	by	ADP
aiti-8098	115	6	improving	improve	VERB
aiti-8098	115	7	vth	vth	NOUN
aiti-8098	115	8	,	,	PUNCT
aiti-8098	115	9	which	which	PRON
aiti-8098	115	10	again	again	ADV
aiti-8098	115	11	depends	depend	VERB
aiti-8098	115	12	on	on	ADP
aiti-8098	115	13	channel	channel	NOUN
aiti-8098	115	14	materials	material	NOUN
aiti-8098	115	15	and	and	CCONJ
aiti-8098	115	16	oxide	oxide	NOUN
aiti-8098	115	17	materials	material	NOUN
aiti-8098	115	18	.	.	PUNCT
aiti-8098	116	1	in	in	ADP
aiti-8098	116	2	this	this	DET
aiti-8098	116	3	research	research	NOUN
aiti-8098	116	4	work	work	NOUN
aiti-8098	116	5	,	,	PUNCT
aiti-8098	116	6	the	the	DET
aiti-8098	116	7	effect	effect	NOUN
aiti-8098	116	8	of	of	ADP
aiti-8098	116	9	graphene	graphene	NOUN
aiti-8098	116	10	material	material	NOUN
aiti-8098	116	11	as	as	SCONJ
aiti-8098	116	12	a	a	DET
aiti-8098	116	13	channel	channel	NOUN
aiti-8098	116	14	is	be	AUX
aiti-8098	116	15	studied	study	VERB
aiti-8098	116	16	,	,	PUNCT
aiti-8098	116	17	and	and	CCONJ
aiti-8098	116	18	the	the	DET
aiti-8098	116	19	simulation	simulation	NOUN
aiti-8098	116	20	results	result	NOUN
aiti-8098	116	21	are	be	AUX
aiti-8098	116	22	obtained	obtain	VERB
aiti-8098	116	23	using	use	VERB
aiti-8098	116	24	the	the	DET
aiti-8098	116	25	silvaco	silvaco	ADJ
aiti-8098	116	26	tcad	tcad	ADJ
aiti-8098	116	27	tool	tool	NOUN
aiti-8098	116	28	.	.	PUNCT
aiti-8098	117	1	the	the	DET
aiti-8098	117	2	four	four	NUM
aiti-8098	117	3	designs	design	NOUN
aiti-8098	117	4	are	be	AUX
aiti-8098	117	5	discussed	discuss	VERB
aiti-8098	117	6	in	in	ADP
aiti-8098	117	7	further	further	ADJ
aiti-8098	117	8	sections	section	NOUN
aiti-8098	117	9	.	.	PUNCT
aiti-8098	118	1	21	21	NUM
aiti-8098	118	2	advances	advance	NOUN
aiti-8098	118	3	in	in	ADP
aiti-8098	118	4	technology	technology	NOUN
aiti-8098	118	5	innovation	innovation	NOUN
aiti-8098	118	6	,	,	PUNCT
aiti-8098	118	7	vol	vol	NOUN
aiti-8098	118	8	.	.	PROPN
aiti-8098	118	9	7	7	NUM
aiti-8098	118	10	,	,	PUNCT
aiti-8098	118	11	no	no	INTJ
aiti-8098	118	12	.	.	NOUN
aiti-8098	118	13	1	1	NUM
aiti-8098	118	14	,	,	PUNCT
aiti-8098	118	15	2022	2022	NUM
aiti-8098	118	16	,	,	PUNCT
aiti-8098	118	17	pp	pp	ADJ
aiti-8098	118	18	.	.	PUNCT
aiti-8098	119	1	19	19	NUM
aiti-8098	119	2	-	-	SYM
aiti-8098	119	3	29	29	NUM
aiti-8098	119	4	2	2	NUM
aiti-8098	119	5	.	.	PUNCT
aiti-8098	120	1	(	(	PUNCT
aiti-8098	120	2	)	)	PUNCT
aiti-8098	120	3	.	.	PUNCT
aiti-8098	121	1	.[2	.[2	PROPN
aiti-8098	121	2	(	(	PUNCT
aiti-8098	121	3	)	)	PUNCT
aiti-8098	121	4	]	]	PUNCT
aiti-8098	121	5	2	2	NUM
aiti-8098	121	6	ox	ox	NOUN
aiti-8098	121	7	d	d	X
aiti-8098	121	8	gs	gs	INTJ
aiti-8098	121	9	ds	ds	ADJ
aiti-8098	121	10	ds	ds	NOUN
aiti-8098	122	1	n	n	NOUN
aiti-8098	122	2	c	c	NOUN
aiti-8098	122	3	w	w	NOUN
aiti-8098	123	1	i	i	PRON
aiti-8098	123	2	lin	lin	PROPN
aiti-8098	123	3	v	v	ADP
aiti-8098	123	4	vt	vt	PROPN
aiti-8098	123	5	v	v	PROPN
aiti-8098	123	6	v	v	NOUN
aiti-8098	123	7	l	l	NOUN
aiti-8098	123	8			NOUN
aiti-8098	124	1			PROPN
aiti-8098	124	2			PROPN
aiti-8098	124	3			NOUN
aiti-8098	124	4	(	(	PUNCT
aiti-8098	124	5	1	1	NUM
aiti-8098	124	6	)	)	PUNCT
aiti-8098	124	7	60(1	60(1	NUM
aiti-8098	124	8	)	)	PUNCT
aiti-8098	125	1	d	d	NOUN
aiti-8098	125	2	ox	ox	NOUN
aiti-8098	125	3	c	c	NOUN
aiti-8098	125	4	ss	ss	NOUN
aiti-8098	125	5	c	c	PROPN
aiti-8098	125	6			NOUN
aiti-8098	125	7			PUNCT
aiti-8098	125	8	(	(	PUNCT
aiti-8098	125	9	2	2	X
aiti-8098	125	10	)	)	PUNCT
aiti-8098	125	11	dd	dd	VERB
aiti-8098	125	12	low	low	ADV
aiti-8098	125	13	th	th	X
aiti-8098	125	14	th	th	X
aiti-8098	125	15	high	high	ADJ
aiti-8098	125	16	low	low	ADJ
aiti-8098	125	17	dd	dd	NOUN
aiti-8098	125	18	dd	dd	NOUN
aiti-8098	125	19	v	v	ADP
aiti-8098	125	20	v	v	PROPN
aiti-8098	125	21	dibl	dibl	PROPN
aiti-8098	125	22	v	v	ADP
aiti-8098	125	23	v	v	PROPN
aiti-8098	125	24			PROPN
aiti-8098	125	25			PROPN
aiti-8098	125	26			NOUN
aiti-8098	125	27	(	(	PUNCT
aiti-8098	125	28	3	3	NUM
aiti-8098	125	29	)	)	PUNCT
aiti-8098	125	30	4	4	NUM
aiti-8098	125	31	.	.	X
aiti-8098	126	1	design	design	NOUN
aiti-8098	126	2	of	of	ADP
aiti-8098	126	3	device	device	NOUN
aiti-8098	126	4	having	have	VERB
aiti-8098	126	5	100	100	NUM
aiti-8098	126	6	nm	nm	ADJ
aiti-8098	126	7	channel	channel	NOUN
aiti-8098	126	8	length	length	NOUN
aiti-8098	126	9	4.1	4.1	NUM
aiti-8098	126	10	.	.	PUNCT
aiti-8098	127	1	design	design	NOUN
aiti-8098	127	2	of	of	ADP
aiti-8098	127	3	silicon	silicon	NOUN
aiti-8098	127	4	mosfet	mosfet	NOUN
aiti-8098	127	5	with	with	ADP
aiti-8098	127	6	100	100	NUM
aiti-8098	127	7	nm	nm	ADJ
aiti-8098	127	8	channel	channel	NOUN
aiti-8098	127	9	length	length	NOUN
aiti-8098	127	10	the	the	DET
aiti-8098	127	11	silicon	silicon	NOUN
aiti-8098	127	12	channel	channel	NOUN
aiti-8098	127	13	mosfet	mosfet	NOUN
aiti-8098	127	14	is	be	AUX
aiti-8098	127	15	designed	design	VERB
aiti-8098	127	16	by	by	ADP
aiti-8098	127	17	using	use	VERB
aiti-8098	127	18	the	the	DET
aiti-8098	127	19	dimensions	dimension	NOUN
aiti-8098	127	20	as	as	ADP
aiti-8098	127	21	per	per	ADP
aiti-8098	127	22	the	the	DET
aiti-8098	127	23	standard	standard	ADJ
aiti-8098	127	24	examples	example	NOUN
aiti-8098	127	25	from	from	ADP
aiti-8098	127	26	the	the	DET
aiti-8098	127	27	silvaco	silvaco	ADJ
aiti-8098	127	28	tcad	tcad	PROPN
aiti-8098	127	29	tool	tool	PROPN
aiti-8098	127	30	.	.	PUNCT
aiti-8098	128	1	fig	fig	NOUN
aiti-8098	128	2	.	.	PUNCT
aiti-8098	129	1	1	1	NUM
aiti-8098	129	2	shows	show	VERB
aiti-8098	129	3	the	the	DET
aiti-8098	129	4	designed	design	VERB
aiti-8098	129	5	structure	structure	NOUN
aiti-8098	129	6	of	of	ADP
aiti-8098	129	7	100	100	NUM
aiti-8098	129	8	nm	nm	ADJ
aiti-8098	129	9	channel	channel	NOUN
aiti-8098	129	10	length	length	NOUN
aiti-8098	129	11	device	device	NOUN
aiti-8098	129	12	.	.	PUNCT
aiti-8098	130	1	the	the	DET
aiti-8098	130	2	total	total	ADJ
aiti-8098	130	3	length	length	NOUN
aiti-8098	130	4	of	of	ADP
aiti-8098	130	5	the	the	DET
aiti-8098	130	6	device	device	NOUN
aiti-8098	130	7	in	in	ADP
aiti-8098	130	8	x	x	NOUN
aiti-8098	130	9	-	-	NOUN
aiti-8098	130	10	direction	direction	NOUN
aiti-8098	130	11	is	be	AUX
aiti-8098	130	12	500	500	NUM
aiti-8098	130	13	nm	nm	NOUN
aiti-8098	130	14	and	and	CCONJ
aiti-8098	130	15	the	the	DET
aiti-8098	130	16	height	height	NOUN
aiti-8098	130	17	of	of	ADP
aiti-8098	130	18	the	the	DET
aiti-8098	130	19	device	device	NOUN
aiti-8098	130	20	in	in	ADP
aiti-8098	130	21	y	y	NOUN
aiti-8098	130	22	-	-	PUNCT
aiti-8098	130	23	direction	direction	NOUN
aiti-8098	130	24	is	be	AUX
aiti-8098	130	25	65	65	NUM
aiti-8098	130	26	nm	nm	NOUN
aiti-8098	130	27	,	,	PUNCT
aiti-8098	130	28	thus	thus	ADV
aiti-8098	130	29	a	a	DET
aiti-8098	130	30	proper	proper	ADJ
aiti-8098	130	31	aspect	aspect	NOUN
aiti-8098	130	32	ratio	ratio	NOUN
aiti-8098	130	33	is	be	AUX
aiti-8098	130	34	maintained	maintain	VERB
aiti-8098	130	35	.	.	PUNCT
aiti-8098	131	1	the	the	DET
aiti-8098	131	2	source	source	NOUN
aiti-8098	131	3	terminal	terminal	NOUN
aiti-8098	131	4	length	length	NOUN
aiti-8098	131	5	in	in	ADP
aiti-8098	131	6	x	x	NOUN
aiti-8098	131	7	-	-	NOUN
aiti-8098	131	8	direction	direction	NOUN
aiti-8098	131	9	ranges	range	VERB
aiti-8098	131	10	from	from	ADP
aiti-8098	131	11	0	0	NUM
aiti-8098	131	12	nm	nm	NOUN
aiti-8098	131	13	to	to	ADP
aiti-8098	131	14	200	200	NUM
aiti-8098	131	15	nm	nm	NOUN
aiti-8098	131	16	,	,	PUNCT
aiti-8098	131	17	and	and	CCONJ
aiti-8098	131	18	the	the	DET
aiti-8098	131	19	contact	contact	NOUN
aiti-8098	131	20	of	of	ADP
aiti-8098	131	21	source	source	NOUN
aiti-8098	131	22	ranges	range	VERB
aiti-8098	131	23	from	from	ADP
aiti-8098	131	24	0	0	NUM
aiti-8098	131	25	nm	nm	NOUN
aiti-8098	131	26	to	to	ADP
aiti-8098	131	27	100	100	NUM
aiti-8098	131	28	nm	nm	NOUN
aiti-8098	131	29	,	,	PUNCT
aiti-8098	131	30	as	as	SCONJ
aiti-8098	131	31	shown	show	VERB
aiti-8098	131	32	in	in	ADP
aiti-8098	131	33	fig	fig	NOUN
aiti-8098	131	34	.	.	PUNCT
aiti-8098	132	1	1	1	X
aiti-8098	132	2	.	.	X
aiti-8098	132	3	the	the	DET
aiti-8098	132	4	channel	channel	NOUN
aiti-8098	132	5	region	region	NOUN
aiti-8098	132	6	ranges	range	VERB
aiti-8098	132	7	from	from	ADP
aiti-8098	132	8	200	200	NUM
aiti-8098	132	9	nm	nm	NOUN
aiti-8098	132	10	to	to	ADP
aiti-8098	132	11	300	300	NUM
aiti-8098	132	12	nm	nm	NOUN
aiti-8098	132	13	with	with	ADP
aiti-8098	132	14	a	a	DET
aiti-8098	132	15	height	height	NOUN
aiti-8098	132	16	of	of	ADP
aiti-8098	132	17	15	15	NUM
aiti-8098	132	18	nm	nm	NOUN
aiti-8098	132	19	.	.	PUNCT
aiti-8098	133	1	the	the	DET
aiti-8098	133	2	drain	drain	NOUN
aiti-8098	133	3	region	region	NOUN
aiti-8098	133	4	ranges	range	VERB
aiti-8098	133	5	from	from	ADP
aiti-8098	133	6	300	300	NUM
aiti-8098	133	7	nm	nm	NOUN
aiti-8098	133	8	to	to	ADP
aiti-8098	133	9	500	500	NUM
aiti-8098	133	10	nm	nm	NOUN
aiti-8098	133	11	,	,	PUNCT
aiti-8098	133	12	and	and	CCONJ
aiti-8098	133	13	the	the	DET
aiti-8098	133	14	drain	drain	NOUN
aiti-8098	133	15	contact	contact	NOUN
aiti-8098	133	16	ranges	range	VERB
aiti-8098	133	17	from	from	ADP
aiti-8098	133	18	400	400	NUM
aiti-8098	133	19	nm	nm	NOUN
aiti-8098	133	20	to	to	ADP
aiti-8098	133	21	500	500	NUM
aiti-8098	133	22	nm	nm	NOUN
aiti-8098	133	23	in	in	ADP
aiti-8098	133	24	x	x	NOUN
aiti-8098	133	25	-	-	NOUN
aiti-8098	133	26	direction	direction	NOUN
aiti-8098	133	27	.	.	PUNCT
aiti-8098	134	1	a	a	DET
aiti-8098	134	2	sio2	sio2	PROPN
aiti-8098	134	3	dielectric	dielectric	ADJ
aiti-8098	134	4	material	material	NOUN
aiti-8098	134	5	is	be	AUX
aiti-8098	134	6	deposited	deposit	VERB
aiti-8098	134	7	with	with	ADP
aiti-8098	134	8	2.5	2.5	NUM
aiti-8098	134	9	nm	nm	ADJ
aiti-8098	134	10	thickness	thickness	NOUN
aiti-8098	134	11	.	.	PUNCT
aiti-8098	135	1	it	it	PRON
aiti-8098	135	2	ranges	range	VERB
aiti-8098	135	3	from	from	ADP
aiti-8098	135	4	175	175	NUM
aiti-8098	135	5	nm	nm	NOUN
aiti-8098	135	6	to	to	ADP
aiti-8098	135	7	325	325	NUM
aiti-8098	135	8	nm	nm	NOUN
aiti-8098	135	9	over	over	ADP
aiti-8098	135	10	the	the	DET
aiti-8098	135	11	channel	channel	NOUN
aiti-8098	135	12	region	region	NOUN
aiti-8098	135	13	.	.	PUNCT
aiti-8098	136	1	a	a	DET
aiti-8098	136	2	polysilicon	polysilicon	NOUN
aiti-8098	136	3	contact	contact	NOUN
aiti-8098	136	4	of	of	ADP
aiti-8098	136	5	2.5	2.5	NUM
aiti-8098	136	6	nm	nm	PRON
aiti-8098	136	7	thickness	thickness	NOUN
aiti-8098	136	8	is	be	AUX
aiti-8098	136	9	used	use	VERB
aiti-8098	136	10	to	to	PART
aiti-8098	136	11	apply	apply	VERB
aiti-8098	136	12	gate	gate	NOUN
aiti-8098	136	13	voltage	voltage	NOUN
aiti-8098	136	14	.	.	PUNCT
aiti-8098	137	1	the	the	DET
aiti-8098	137	2	bulk	bulk	NOUN
aiti-8098	137	3	starts	start	VERB
aiti-8098	137	4	from	from	ADP
aiti-8098	137	5	20	20	NUM
aiti-8098	137	6	nm	nm	NOUN
aiti-8098	137	7	to	to	ADP
aiti-8098	137	8	65	65	NUM
aiti-8098	137	9	nm	nm	NOUN
aiti-8098	137	10	in	in	ADP
aiti-8098	137	11	y	y	NOUN
aiti-8098	137	12	-	-	NOUN
aiti-8098	137	13	direction	direction	NOUN
aiti-8098	137	14	.	.	PUNCT
aiti-8098	138	1	the	the	DET
aiti-8098	138	2	default	default	NOUN
aiti-8098	138	3	body	body	NOUN
aiti-8098	138	4	voltage	voltage	NOUN
aiti-8098	138	5	is	be	AUX
aiti-8098	138	6	zero	zero	NUM
aiti-8098	138	7	.	.	PUNCT
aiti-8098	139	1	fig	fig	NOUN
aiti-8098	139	2	.	.	PUNCT
aiti-8098	140	1	1	1	NUM
aiti-8098	140	2	silicon	silicon	NOUN
aiti-8098	140	3	channel	channel	NOUN
aiti-8098	140	4	mosfet	mosfet	NOUN
aiti-8098	140	5	with	with	ADP
aiti-8098	140	6	100	100	NUM
aiti-8098	140	7	nm	nm	ADJ
aiti-8098	140	8	channel	channel	NOUN
aiti-8098	140	9	length	length	NOUN
aiti-8098	140	10	4.2	4.2	NUM
aiti-8098	140	11	.	.	PUNCT
aiti-8098	141	1	simulation	simulation	NOUN
aiti-8098	141	2	results	result	NOUN
aiti-8098	141	3	of	of	ADP
aiti-8098	141	4	100	100	NUM
aiti-8098	141	5	nm	nm	NOUN
aiti-8098	141	6	mosfet	mosfet	NOUN
aiti-8098	141	7	the	the	DET
aiti-8098	141	8	designed	design	VERB
aiti-8098	141	9	100	100	NUM
aiti-8098	141	10	nm	nm	PRON
aiti-8098	141	11	mosfet	mosfet	NOUN
aiti-8098	141	12	is	be	AUX
aiti-8098	141	13	simulated	simulate	VERB
aiti-8098	141	14	,	,	PUNCT
aiti-8098	141	15	and	and	CCONJ
aiti-8098	141	16	various	various	ADJ
aiti-8098	141	17	parameters	parameter	NOUN
aiti-8098	141	18	are	be	AUX
aiti-8098	141	19	extracted	extract	VERB
aiti-8098	141	20	.	.	PUNCT
aiti-8098	142	1	initially	initially	ADV
aiti-8098	142	2	,	,	PUNCT
aiti-8098	142	3	the	the	DET
aiti-8098	142	4	drain	drain	NOUN
aiti-8098	142	5	current	current	ADJ
aiti-8098	142	6	to	to	PART
aiti-8098	142	7	gate	gate	VERB
aiti-8098	142	8	-	-	PUNCT
aiti-8098	142	9	source	source	NOUN
aiti-8098	142	10	voltage	voltage	NOUN
aiti-8098	142	11	(	(	PUNCT
aiti-8098	142	12	id	id	NOUN
aiti-8098	142	13	-	-	PUNCT
aiti-8098	142	14	vgs	vgs	NOUN
aiti-8098	142	15	)	)	PUNCT
aiti-8098	142	16	characteristic	characteristic	NOUN
aiti-8098	142	17	is	be	AUX
aiti-8098	142	18	plotted	plot	VERB
aiti-8098	142	19	.	.	PUNCT
aiti-8098	143	1	vth	vth	NOUN
aiti-8098	143	2	is	be	AUX
aiti-8098	143	3	extracted	extract	VERB
aiti-8098	143	4	from	from	ADP
aiti-8098	143	5	this	this	DET
aiti-8098	143	6	plot	plot	NOUN
aiti-8098	143	7	,	,	PUNCT
aiti-8098	143	8	the	the	DET
aiti-8098	143	9	observed	observe	VERB
aiti-8098	143	10	value	value	NOUN
aiti-8098	143	11	is	be	AUX
aiti-8098	143	12	vth	vth	NOUN
aiti-8098	143	13	=	=	PUNCT
aiti-8098	143	14	0.303v	0.303v	NOUN
aiti-8098	143	15	.	.	PUNCT
aiti-8098	144	1	for	for	ADP
aiti-8098	144	2	dibl	dibl	PROPN
aiti-8098	144	3	extraction	extraction	NOUN
aiti-8098	144	4	,	,	PUNCT
aiti-8098	144	5	the	the	DET
aiti-8098	144	6	device	device	NOUN
aiti-8098	144	7	is	be	AUX
aiti-8098	144	8	simulated	simulate	VERB
aiti-8098	144	9	for	for	ADP
aiti-8098	144	10	two	two	NUM
aiti-8098	144	11	different	different	ADJ
aiti-8098	144	12	drain	drain	NOUN
aiti-8098	144	13	-	-	PUNCT
aiti-8098	144	14	drain	drain	NOUN
aiti-8098	144	15	voltage	voltage	NOUN
aiti-8098	144	16	(	(	PUNCT
aiti-8098	144	17	vdd	vdd	PROPN
aiti-8098	144	18	)	)	PUNCT
aiti-8098	144	19	,	,	PUNCT
aiti-8098	144	20	i.e.	i.e.	X
aiti-8098	144	21	,	,	PUNCT
aiti-8098	144	22	vdd(min	vdd(min	NOUN
aiti-8098	144	23	)	)	PUNCT
aiti-8098	144	24	=	=	SYM
aiti-8098	144	25	0.1	0.1	NUM
aiti-8098	144	26	v	v	NOUN
aiti-8098	144	27	and	and	CCONJ
aiti-8098	144	28	vdd(max	vdd(max	ADJ
aiti-8098	144	29	)	)	PUNCT
aiti-8098	144	30	=	=	SYM
aiti-8098	144	31	1	1	NUM
aiti-8098	144	32	v.	v.	ADP
aiti-8098	144	33	the	the	DET
aiti-8098	144	34	obtained	obtain	VERB
aiti-8098	144	35	dibl	dibl	PROPN
aiti-8098	144	36	value	value	NOUN
aiti-8098	144	37	is	be	AUX
aiti-8098	144	38	0.0279	0.0279	NUM
aiti-8098	144	39	mv	mv	PROPN
aiti-8098	144	40	/	/	PROPN
aiti-8098	144	41	v.	v.	ADP
aiti-8098	144	42	the	the	DET
aiti-8098	144	43	ss	ss	NOUN
aiti-8098	144	44	value	value	NOUN
aiti-8098	144	45	,	,	PUNCT
aiti-8098	144	46	which	which	PRON
aiti-8098	144	47	decides	decide	VERB
aiti-8098	144	48	the	the	DET
aiti-8098	144	49	speed	speed	NOUN
aiti-8098	144	50	of	of	ADP
aiti-8098	144	51	the	the	DET
aiti-8098	144	52	device	device	NOUN
aiti-8098	144	53	,	,	PUNCT
aiti-8098	144	54	is	be	AUX
aiti-8098	144	55	observed	observe	VERB
aiti-8098	144	56	to	to	PART
aiti-8098	144	57	be	be	AUX
aiti-8098	144	58	79.72	79.72	NUM
aiti-8098	144	59	mv	mv	PROPN
aiti-8098	144	60	/	/	SYM
aiti-8098	144	61	dec	dec	PROPN
aiti-8098	144	62	(	(	PUNCT
aiti-8098	144	63	near	near	ADP
aiti-8098	144	64	its	its	PRON
aiti-8098	144	65	ideal	ideal	ADJ
aiti-8098	144	66	value	value	NOUN
aiti-8098	144	67	of	of	ADP
aiti-8098	144	68	60	60	NUM
aiti-8098	144	69	mv	mv	PROPN
aiti-8098	144	70	/	/	SYM
aiti-8098	144	71	dec	dec	PROPN
aiti-8098	144	72	)	)	PUNCT
aiti-8098	144	73	.	.	PUNCT
aiti-8098	145	1	ion	ion	NOUN
aiti-8098	145	2	/	/	SYM
aiti-8098	145	3	ioff	ioff	NOUN
aiti-8098	145	4	ratio	ratio	NOUN
aiti-8098	145	5	is	be	AUX
aiti-8098	145	6	obtained	obtain	VERB
aiti-8098	145	7	by	by	ADP
aiti-8098	145	8	finding	find	VERB
aiti-8098	145	9	the	the	DET
aiti-8098	145	10	values	value	NOUN
aiti-8098	145	11	of	of	ADP
aiti-8098	145	12	ion	ion	NOUN
aiti-8098	145	13	at	at	ADP
aiti-8098	145	14	vdd	vdd	PROPN
aiti-8098	145	15	=	=	SYM
aiti-8098	145	16	1	1	NUM
aiti-8098	145	17	v	v	NOUN
aiti-8098	145	18	and	and	CCONJ
aiti-8098	145	19	ioff	ioff	NOUN
aiti-8098	145	20	at	at	ADP
aiti-8098	145	21	vdd	vdd	PROPN
aiti-8098	145	22	=	=	SYM
aiti-8098	145	23	0	0	PROPN
aiti-8098	146	1	v.	v.	ADP
aiti-8098	146	2	the	the	DET
aiti-8098	146	3	ratio	ratio	NOUN
aiti-8098	146	4	observed	observe	VERB
aiti-8098	146	5	is	be	AUX
aiti-8098	146	6	1.73e10	1.73e10	NUM
aiti-8098	146	7	,	,	PUNCT
aiti-8098	146	8	which	which	PRON
aiti-8098	146	9	is	be	AUX
aiti-8098	146	10	higher	high	ADJ
aiti-8098	146	11	enough	enough	ADV
aiti-8098	146	12	to	to	PART
aiti-8098	146	13	switch	switch	VERB
aiti-8098	146	14	off	off	ADP
aiti-8098	146	15	the	the	DET
aiti-8098	146	16	device	device	NOUN
aiti-8098	146	17	and	and	CCONJ
aiti-8098	146	18	for	for	ADP
aiti-8098	146	19	low	low	ADJ
aiti-8098	146	20	leakage	leakage	NOUN
aiti-8098	146	21	current	current	NOUN
aiti-8098	146	22	.	.	PUNCT
aiti-8098	147	1	fig	fig	NOUN
aiti-8098	147	2	.	.	PUNCT
aiti-8098	148	1	2	2	NUM
aiti-8098	148	2	shows	show	VERB
aiti-8098	148	3	the	the	DET
aiti-8098	148	4	id	id	PROPN
aiti-8098	148	5	-	-	PUNCT
aiti-8098	148	6	vgs	vgs	PROPN
aiti-8098	148	7	characteristics	characteristic	NOUN
aiti-8098	148	8	.	.	PUNCT
aiti-8098	149	1	fig	fig	NOUN
aiti-8098	149	2	.	.	PUNCT
aiti-8098	150	1	3	3	NUM
aiti-8098	150	2	shows	show	VERB
aiti-8098	150	3	the	the	DET
aiti-8098	150	4	id	id	PROPN
aiti-8098	150	5	-	-	PUNCT
aiti-8098	150	6	vds	vds	PROPN
aiti-8098	150	7	characteristics	characteristic	NOUN
aiti-8098	150	8	to	to	PART
aiti-8098	150	9	plot	plot	VERB
aiti-8098	150	10	and	and	CCONJ
aiti-8098	150	11	find	find	VERB
aiti-8098	150	12	the	the	DET
aiti-8098	150	13	saturation	saturation	NOUN
aiti-8098	150	14	slope	slope	NOUN
aiti-8098	150	15	.	.	PUNCT
aiti-8098	151	1	the	the	DET
aiti-8098	151	2	three	three	NUM
aiti-8098	151	3	curves	curve	NOUN
aiti-8098	151	4	for	for	ADP
aiti-8098	151	5	three	three	NUM
aiti-8098	151	6	different	different	ADJ
aiti-8098	151	7	gate	gate	NOUN
aiti-8098	151	8	voltages	voltage	NOUN
aiti-8098	151	9	are	be	AUX
aiti-8098	151	10	plotted	plot	VERB
aiti-8098	151	11	:	:	PUNCT
aiti-8098	151	12	vgs1	vgs1	NOUN
aiti-8098	151	13	=	=	PUNCT
aiti-8098	151	14	0.3	0.3	NUM
aiti-8098	151	15	v	v	NOUN
aiti-8098	151	16	,	,	PUNCT
aiti-8098	151	17	vgs2	vgs2	ADJ
aiti-8098	151	18	=	=	PUNCT
aiti-8098	151	19	0.6	0.6	NUM
aiti-8098	151	20	v	v	NOUN
aiti-8098	151	21	,	,	PUNCT
aiti-8098	151	22	and	and	CCONJ
aiti-8098	151	23	vgs3	vgs3	NOUN
aiti-8098	151	24	=	=	SYM
aiti-8098	151	25	1	1	NUM
aiti-8098	151	26	v.	v.	ADP
aiti-8098	151	27	the	the	DET
aiti-8098	151	28	observed	observe	VERB
aiti-8098	151	29	saturation	saturation	NOUN
aiti-8098	151	30	slope	slope	NOUN
aiti-8098	151	31	value	value	NOUN
aiti-8098	151	32	is	be	AUX
aiti-8098	151	33	2.78e-05	2.78e-05	NUM
aiti-8098	151	34	.	.	PUNCT
aiti-8098	152	1	from	from	ADP
aiti-8098	152	2	the	the	DET
aiti-8098	152	3	characteristics	characteristic	NOUN
aiti-8098	152	4	,	,	PUNCT
aiti-8098	152	5	it	it	PRON
aiti-8098	152	6	is	be	AUX
aiti-8098	152	7	observed	observe	VERB
aiti-8098	152	8	that	that	SCONJ
aiti-8098	152	9	the	the	DET
aiti-8098	152	10	device	device	NOUN
aiti-8098	152	11	offers	offer	VERB
aiti-8098	152	12	a	a	DET
aiti-8098	152	13	very	very	ADV
aiti-8098	152	14	low	low	ADJ
aiti-8098	152	15	i	i	NOUN
aiti-8098	152	16	d	d	PROPN
aiti-8098	152	17	for	for	ADP
aiti-8098	152	18	vgs1	vgs1	NOUN
aiti-8098	152	19	=	=	PUNCT
aiti-8098	152	20	0.3	0.3	NUM
aiti-8098	152	21	v	v	NOUN
aiti-8098	152	22	and	and	CCONJ
aiti-8098	152	23	vgs2	vgs2	ADJ
aiti-8098	152	24	=	=	PUNCT
aiti-8098	152	25	0.6	0.6	NUM
aiti-8098	152	26	v	v	NOUN
aiti-8098	152	27	,	,	PUNCT
aiti-8098	152	28	and	and	CCONJ
aiti-8098	152	29	offers	offer	VERB
aiti-8098	152	30	sufficient	sufficient	ADJ
aiti-8098	152	31	i	i	PROPN
aiti-8098	152	32	d	d	PROPN
aiti-8098	152	33	for	for	ADP
aiti-8098	152	34	vgs3	vgs3	NOUN
aiti-8098	152	35	=	=	SYM
aiti-8098	152	36	1	1	NUM
aiti-8098	152	37	v.	v.	ADP
aiti-8098	152	38	22	22	NUM
aiti-8098	152	39	advances	advance	NOUN
aiti-8098	152	40	in	in	ADP
aiti-8098	152	41	technology	technology	NOUN
aiti-8098	152	42	innovation	innovation	NOUN
aiti-8098	152	43	,	,	PUNCT
aiti-8098	152	44	vol	vol	NOUN
aiti-8098	152	45	.	.	PROPN
aiti-8098	152	46	7	7	NUM
aiti-8098	152	47	,	,	PUNCT
aiti-8098	152	48	no	no	INTJ
aiti-8098	152	49	.	.	NOUN
aiti-8098	152	50	1	1	NUM
aiti-8098	152	51	,	,	PUNCT
aiti-8098	152	52	2022	2022	NUM
aiti-8098	152	53	,	,	PUNCT
aiti-8098	152	54	pp	pp	ADJ
aiti-8098	152	55	.	.	PUNCT
aiti-8098	153	1	19	19	NUM
aiti-8098	153	2	-	-	SYM
aiti-8098	153	3	29	29	NUM
aiti-8098	153	4	4.3	4.3	NUM
aiti-8098	153	5	.	.	PUNCT
aiti-8098	154	1	design	design	NOUN
aiti-8098	154	2	of	of	ADP
aiti-8098	154	3	graphene	graphene	ADJ
aiti-8098	154	4	fet	fet	NOUN
aiti-8098	154	5	with	with	ADP
aiti-8098	154	6	100	100	NUM
aiti-8098	154	7	nm	nm	ADJ
aiti-8098	154	8	channel	channel	NOUN
aiti-8098	154	9	length	length	NOUN
aiti-8098	154	10	the	the	DET
aiti-8098	154	11	graphene	graphene	NOUN
aiti-8098	154	12	material	material	NOUN
aiti-8098	154	13	is	be	AUX
aiti-8098	154	14	not	not	PART
aiti-8098	154	15	directly	directly	ADV
aiti-8098	154	16	available	available	ADJ
aiti-8098	154	17	in	in	ADP
aiti-8098	154	18	the	the	DET
aiti-8098	154	19	silvaco	silvaco	ADJ
aiti-8098	154	20	tcad	tcad	ADJ
aiti-8098	154	21	tool	tool	NOUN
aiti-8098	154	22	for	for	ADP
aiti-8098	154	23	simulation	simulation	NOUN
aiti-8098	154	24	purposes	purpose	NOUN
aiti-8098	154	25	.	.	PUNCT
aiti-8098	155	1	hence	hence	ADV
aiti-8098	155	2	,	,	PUNCT
aiti-8098	155	3	the	the	DET
aiti-8098	155	4	design	design	NOUN
aiti-8098	155	5	of	of	ADP
aiti-8098	155	6	the	the	DET
aiti-8098	155	7	graphene	graphene	ADJ
aiti-8098	155	8	channel	channel	NOUN
aiti-8098	155	9	fet	fet	PROPN
aiti-8098	155	10	is	be	AUX
aiti-8098	155	11	implemented	implement	VERB
aiti-8098	155	12	using	use	VERB
aiti-8098	155	13	the	the	DET
aiti-8098	155	14	silvaco	silvaco	ADJ
aiti-8098	155	15	tcad	tcad	ADJ
aiti-8098	155	16	tool	tool	NOUN
aiti-8098	155	17	by	by	ADP
aiti-8098	155	18	adding	add	VERB
aiti-8098	155	19	graphene	graphene	NOUN
aiti-8098	155	20	as	as	ADP
aiti-8098	155	21	a	a	DET
aiti-8098	155	22	user	user	NOUN
aiti-8098	155	23	-	-	PUNCT
aiti-8098	155	24	defined	define	VERB
aiti-8098	155	25	material	material	NOUN
aiti-8098	155	26	.	.	PUNCT
aiti-8098	156	1	graphene	graphene	NOUN
aiti-8098	156	2	is	be	AUX
aiti-8098	156	3	an	an	DET
aiti-8098	156	4	extract	extract	NOUN
aiti-8098	156	5	of	of	ADP
aiti-8098	156	6	carbon	carbon	NOUN
aiti-8098	156	7	having	have	VERB
aiti-8098	156	8	very	very	ADV
aiti-8098	156	9	high	high	ADJ
aiti-8098	156	10	carrier	carrier	NOUN
aiti-8098	156	11	mobility	mobility	NOUN
aiti-8098	156	12	and	and	CCONJ
aiti-8098	156	13	a	a	DET
aiti-8098	156	14	2	2	NUM
aiti-8098	156	15	-	-	PUNCT
aiti-8098	156	16	d	d	NOUN
aiti-8098	156	17	structure	structure	NOUN
aiti-8098	156	18	.	.	PUNCT
aiti-8098	157	1	to	to	PART
aiti-8098	157	2	implement	implement	VERB
aiti-8098	157	3	graphene	graphene	NOUN
aiti-8098	157	4	fet	fet	PROPN
aiti-8098	157	5	using	use	VERB
aiti-8098	157	6	silvaco	silvaco	ADJ
aiti-8098	157	7	tcad	tcad	PROPN
aiti-8098	157	8	,	,	PUNCT
aiti-8098	157	9	one	one	NUM
aiti-8098	157	10	major	major	ADJ
aiti-8098	157	11	issue	issue	NOUN
aiti-8098	157	12	is	be	AUX
aiti-8098	157	13	that	that	SCONJ
aiti-8098	157	14	graphene	graphene	NOUN
aiti-8098	157	15	needs	need	VERB
aiti-8098	157	16	to	to	PART
aiti-8098	157	17	be	be	AUX
aiti-8098	157	18	directly	directly	ADV
aiti-8098	157	19	available	available	ADJ
aiti-8098	157	20	in	in	ADP
aiti-8098	157	21	the	the	DET
aiti-8098	157	22	tool	tool	NOUN
aiti-8098	157	23	.	.	PUNCT
aiti-8098	158	1	hence	hence	ADV
aiti-8098	158	2	,	,	PUNCT
aiti-8098	158	3	the	the	DET
aiti-8098	158	4	user	user	NOUN
aiti-8098	158	5	needs	need	VERB
aiti-8098	158	6	to	to	PART
aiti-8098	158	7	define	define	VERB
aiti-8098	158	8	a	a	DET
aiti-8098	158	9	user	user	NOUN
aiti-8098	158	10	-	-	PUNCT
aiti-8098	158	11	defined	define	VERB
aiti-8098	158	12	material	material	NOUN
aiti-8098	158	13	by	by	ADP
aiti-8098	158	14	changing	change	VERB
aiti-8098	158	15	the	the	DET
aiti-8098	158	16	properties	property	NOUN
aiti-8098	158	17	of	of	ADP
aiti-8098	158	18	the	the	DET
aiti-8098	158	19	existing	exist	VERB
aiti-8098	158	20	material	material	NOUN
aiti-8098	158	21	.	.	PUNCT
aiti-8098	159	1	in	in	ADP
aiti-8098	159	2	the	the	DET
aiti-8098	159	3	silvaco	silvaco	ADJ
aiti-8098	159	4	tool	tool	NOUN
aiti-8098	159	5	,	,	PUNCT
aiti-8098	159	6	various	various	ADJ
aiti-8098	159	7	materials	material	NOUN
aiti-8098	159	8	are	be	AUX
aiti-8098	159	9	available	available	ADJ
aiti-8098	159	10	which	which	PRON
aiti-8098	159	11	can	can	AUX
aiti-8098	159	12	be	be	AUX
aiti-8098	159	13	used	use	VERB
aiti-8098	159	14	as	as	ADP
aiti-8098	159	15	an	an	DET
aiti-8098	159	16	alternative	alternative	NOUN
aiti-8098	159	17	of	of	ADP
aiti-8098	159	18	graphene	graphene	NOUN
aiti-8098	159	19	.	.	PUNCT
aiti-8098	160	1	one	one	NUM
aiti-8098	160	2	attempt	attempt	NOUN
aiti-8098	160	3	has	have	AUX
aiti-8098	160	4	been	be	AUX
aiti-8098	160	5	reported	report	VERB
aiti-8098	160	6	by	by	ADP
aiti-8098	160	7	mobarakeh	mobarakeh	PROPN
aiti-8098	160	8	et	et	PROPN
aiti-8098	160	9	al	al	PROPN
aiti-8098	160	10	.	.	PUNCT
aiti-8098	161	1	[	[	X
aiti-8098	161	2	23	23	NUM
aiti-8098	161	3	]	]	PUNCT
aiti-8098	161	4	.	.	PUNCT
aiti-8098	162	1	a	a	DET
aiti-8098	162	2	3c	3c	NUM
aiti-8098	162	3	-	-	PUNCT
aiti-8098	162	4	sic	sic	ADJ
aiti-8098	162	5	material	material	NOUN
aiti-8098	162	6	is	be	AUX
aiti-8098	162	7	used	use	VERB
aiti-8098	162	8	as	as	ADP
aiti-8098	162	9	a	a	DET
aiti-8098	162	10	graphene	graphene	ADJ
aiti-8098	162	11	channel	channel	NOUN
aiti-8098	162	12	.	.	PUNCT
aiti-8098	163	1	another	another	DET
aiti-8098	163	2	design	design	NOUN
aiti-8098	163	3	using	use	VERB
aiti-8098	163	4	the	the	DET
aiti-8098	163	5	silvaco	silvaco	ADJ
aiti-8098	163	6	tcad	tcad	PROPN
aiti-8098	163	7	user	user	NOUN
aiti-8098	163	8	-	-	PUNCT
aiti-8098	163	9	defined	define	VERB
aiti-8098	163	10	material	material	NOUN
aiti-8098	163	11	is	be	AUX
aiti-8098	163	12	demonstrated	demonstrate	VERB
aiti-8098	163	13	by	by	ADP
aiti-8098	163	14	kuang	kuang	PROPN
aiti-8098	163	15	et	et	PROPN
aiti-8098	163	16	al	al	PROPN
aiti-8098	163	17	.	.	PUNCT
aiti-8098	164	1	[	[	X
aiti-8098	164	2	24	24	NUM
aiti-8098	164	3	]	]	PUNCT
aiti-8098	164	4	.	.	PUNCT
aiti-8098	165	1	in	in	ADP
aiti-8098	165	2	silvaco	silvaco	PROPN
aiti-8098	165	3	tcad	tcad	PROPN
aiti-8098	165	4	,	,	PUNCT
aiti-8098	165	5	three	three	NUM
aiti-8098	165	6	materials	material	NOUN
aiti-8098	165	7	have	have	VERB
aiti-8098	165	8	the	the	DET
aiti-8098	165	9	properties	property	NOUN
aiti-8098	165	10	which	which	PRON
aiti-8098	165	11	are	be	AUX
aiti-8098	165	12	close	close	ADJ
aiti-8098	165	13	to	to	ADP
aiti-8098	165	14	that	that	PRON
aiti-8098	165	15	of	of	ADP
aiti-8098	165	16	graphene	graphene	ADJ
aiti-8098	165	17	material	material	NOUN
aiti-8098	165	18	,	,	PUNCT
aiti-8098	165	19	as	as	SCONJ
aiti-8098	165	20	shown	show	VERB
aiti-8098	165	21	in	in	ADP
aiti-8098	165	22	table	table	NOUN
aiti-8098	165	23	1	1	NUM
aiti-8098	165	24	.	.	PUNCT
aiti-8098	166	1	in	in	ADP
aiti-8098	166	2	this	this	DET
aiti-8098	166	3	work	work	NOUN
aiti-8098	166	4	,	,	PUNCT
aiti-8098	166	5	insb	insb	NOUN
aiti-8098	166	6	is	be	AUX
aiti-8098	166	7	used	use	VERB
aiti-8098	166	8	as	as	ADP
aiti-8098	166	9	a	a	DET
aiti-8098	166	10	base	base	NOUN
aiti-8098	166	11	material	material	NOUN
aiti-8098	166	12	because	because	SCONJ
aiti-8098	166	13	it	it	PRON
aiti-8098	166	14	has	have	VERB
aiti-8098	166	15	low	low	ADJ
aiti-8098	166	16	energy	energy	NOUN
aiti-8098	166	17	bandgap	bandgap	NOUN
aiti-8098	166	18	and	and	CCONJ
aiti-8098	166	19	higher	high	ADJ
aiti-8098	166	20	electron	electron	NOUN
aiti-8098	166	21	and	and	CCONJ
aiti-8098	166	22	hole	hole	NOUN
aiti-8098	166	23	mobility	mobility	NOUN
aiti-8098	166	24	,	,	PUNCT
aiti-8098	166	25	which	which	PRON
aiti-8098	166	26	is	be	AUX
aiti-8098	166	27	the	the	DET
aiti-8098	166	28	closest	close	ADJ
aiti-8098	166	29	to	to	ADP
aiti-8098	166	30	the	the	DET
aiti-8098	166	31	properties	property	NOUN
aiti-8098	166	32	of	of	ADP
aiti-8098	166	33	graphene	graphene	ADJ
aiti-8098	166	34	material	material	NOUN
aiti-8098	166	35	.	.	PUNCT
aiti-8098	167	1	table	table	NOUN
aiti-8098	167	2	1	1	NUM
aiti-8098	167	3	different	different	ADJ
aiti-8098	167	4	material	material	NOUN
aiti-8098	167	5	parameters	parameter	NOUN
aiti-8098	167	6	which	which	PRON
aiti-8098	167	7	are	be	AUX
aiti-8098	167	8	close	close	ADJ
aiti-8098	167	9	to	to	PART
aiti-8098	167	10	graphene	graphene	VERB
aiti-8098	167	11	material	material	NOUN
aiti-8098	167	12	[	[	X
aiti-8098	167	13	25	25	NUM
aiti-8098	167	14	]	]	PUNCT
aiti-8098	167	15	material	material	NOUN
aiti-8098	167	16	eg	eg	NOUN
aiti-8098	167	17	(	(	PUNCT
aiti-8098	167	18	ev	ev	PROPN
aiti-8098	167	19	)	)	PUNCT
aiti-8098	167	20	mun	mun	PROPN
aiti-8098	167	21	(	(	PUNCT
aiti-8098	167	22	cm	cm	NOUN
aiti-8098	167	23	2	2	NUM
aiti-8098	167	24	/v.s	/v.s	NUM
aiti-8098	167	25	)	)	PUNCT
aiti-8098	167	26	mup	mup	NOUN
aiti-8098	167	27	(	(	PUNCT
aiti-8098	167	28	cm	cm	NOUN
aiti-8098	167	29	2	2	NUM
aiti-8098	167	30	/v.s	/v.s	NUM
aiti-8098	167	31	)	)	PUNCT
aiti-8098	167	32	nc	nc	PROPN
aiti-8098	167	33	(	(	PUNCT
aiti-8098	167	34	per	per	ADP
aiti-8098	167	35	cc	cc	NOUN
aiti-8098	167	36	)	)	PUNCT
aiti-8098	167	37	nv	nv	PROPN
aiti-8098	167	38	(	(	PUNCT
aiti-8098	167	39	per	per	ADP
aiti-8098	167	40	cc	cc	NOUN
aiti-8098	167	41	)	)	PUNCT
aiti-8098	167	42	ni	ni	PROPN
aiti-8098	167	43	(	(	PUNCT
aiti-8098	167	44	per	per	ADP
aiti-8098	167	45	cc	cc	NOUN
aiti-8098	167	46	)	)	PUNCT
aiti-8098	167	47	vsatn	vsatn	NOUN
aiti-8098	167	48	(	(	PUNCT
aiti-8098	167	49	cm	cm	NOUN
aiti-8098	167	50	/	/	SYM
aiti-8098	167	51	s	s	PART
aiti-8098	167	52	)	)	PUNCT
aiti-8098	167	53	vsatp	vsatp	NOUN
aiti-8098	167	54	(	(	PUNCT
aiti-8098	167	55	cm	cm	NOUN
aiti-8098	167	56	/	/	SYM
aiti-8098	167	57	s	s	NOUN
aiti-8098	167	58	)	)	PUNCT
aiti-8098	167	59	3c	3c	NUM
aiti-8098	167	60	-	-	PUNCT
aiti-8098	167	61	sic	sic	ADJ
aiti-8098	167	62	2.2	2.2	NUM
aiti-8098	167	63	1000	1000	NUM
aiti-8098	167	64	50	50	NUM
aiti-8098	167	65	6.59e+18	6.59e+18	NUM
aiti-8098	167	66	1.68e+18	1.68e+18	NUM
aiti-8098	167	67	1.1	1.1	NUM
aiti-8098	167	68	2.00e+7	2.00e+7	NUM
aiti-8098	167	69	1.00e+6	1.00e+6	NUM
aiti-8098	167	70	insb	insb	VERB
aiti-8098	167	71	0.17	0.17	NUM
aiti-8098	167	72	78000	78000	NUM
aiti-8098	167	73	750	750	NUM
aiti-8098	168	1	4.16e+16	4.16e+16	NUM
aiti-8098	168	2	6.35e+18	6.35e+18	NUM
aiti-8098	168	3	1.92e+16	1.92e+16	NUM
aiti-8098	168	4	1.00e+6	1.00e+6	NUM
aiti-8098	168	5	1.00e+6	1.00e+6	NUM
aiti-8098	168	6	inas	ina	VERB
aiti-8098	168	7	0.35	0.35	NUM
aiti-8098	168	8	33000	33000	NUM
aiti-8098	168	9	460	460	NUM
aiti-8098	168	10	9.33e+16	9.33e+16	NUM
aiti-8098	168	11	8.12e+18	8.12e+18	NUM
aiti-8098	168	12	9.99e+14	9.99e+14	NUM
aiti-8098	168	13	1.00e+6	1.00e+6	NUM
aiti-8098	168	14	1.00e+6	1.00e+6	NUM
aiti-8098	168	15	note	note	VERB
aiti-8098	168	16	:	:	PUNCT
aiti-8098	168	17	eg	eg	NOUN
aiti-8098	168	18	is	be	AUX
aiti-8098	168	19	energy	energy	NOUN
aiti-8098	168	20	bandgap	bandgap	NOUN
aiti-8098	168	21	;	;	PUNCT
aiti-8098	168	22	mun	mun	PROPN
aiti-8098	168	23	is	be	AUX
aiti-8098	168	24	the	the	DET
aiti-8098	168	25	mobility	mobility	NOUN
aiti-8098	168	26	of	of	ADP
aiti-8098	168	27	electronics	electronic	NOUN
aiti-8098	168	28	;	;	PUNCT
aiti-8098	168	29	mup	mup	NOUN
aiti-8098	168	30	is	be	AUX
aiti-8098	168	31	the	the	DET
aiti-8098	168	32	mobility	mobility	NOUN
aiti-8098	168	33	of	of	ADP
aiti-8098	168	34	holes	hole	NOUN
aiti-8098	168	35	;	;	PUNCT
aiti-8098	168	36	nc	nc	PROPN
aiti-8098	168	37	is	be	AUX
aiti-8098	168	38	the	the	DET
aiti-8098	168	39	effective	effective	ADJ
aiti-8098	168	40	density	density	NOUN
aiti-8098	168	41	of	of	ADP
aiti-8098	168	42	state	state	NOUN
aiti-8098	168	43	(	(	PUNCT
aiti-8098	168	44	conduction	conduction	NOUN
aiti-8098	168	45	band	band	NOUN
aiti-8098	168	46	)	)	PUNCT
aiti-8098	168	47	;	;	PUNCT
aiti-8098	168	48	cc	cc	PROPN
aiti-8098	168	49	is	be	AUX
aiti-8098	168	50	cubic	cubic	ADJ
aiti-8098	168	51	per	per	ADP
aiti-8098	168	52	centimeter	centimeter	NOUN
aiti-8098	168	53	;	;	PUNCT
aiti-8098	168	54	nv	nv	PROPN
aiti-8098	168	55	is	be	AUX
aiti-8098	168	56	the	the	DET
aiti-8098	168	57	effective	effective	ADJ
aiti-8098	168	58	density	density	NOUN
aiti-8098	168	59	of	of	ADP
aiti-8098	168	60	state	state	NOUN
aiti-8098	168	61	in	in	ADP
aiti-8098	168	62	valence	valence	NOUN
aiti-8098	168	63	band	band	NOUN
aiti-8098	168	64	;	;	PUNCT
aiti-8098	168	65	ni	ni	PROPN
aiti-8098	168	66	is	be	AUX
aiti-8098	168	67	intrinsic	intrinsic	ADJ
aiti-8098	168	68	carrier	carrier	NOUN
aiti-8098	168	69	concentration	concentration	NOUN
aiti-8098	168	70	;	;	PUNCT
aiti-8098	168	71	vsatn	vsatn	NOUN
aiti-8098	168	72	is	be	AUX
aiti-8098	168	73	the	the	DET
aiti-8098	168	74	saturation	saturation	NOUN
aiti-8098	168	75	velocity	velocity	NOUN
aiti-8098	168	76	of	of	ADP
aiti-8098	168	77	electrons	electron	NOUN
aiti-8098	168	78	;	;	PUNCT
aiti-8098	168	79	vsatp	vsatp	NOUN
aiti-8098	168	80	is	be	AUX
aiti-8098	168	81	the	the	DET
aiti-8098	168	82	saturation	saturation	NOUN
aiti-8098	168	83	velocity	velocity	NOUN
aiti-8098	168	84	of	of	ADP
aiti-8098	168	85	holes	hole	NOUN
aiti-8098	168	86	.	.	PUNCT
aiti-8098	169	1	as	as	ADP
aiti-8098	169	2	per	per	ADP
aiti-8098	169	3	the	the	DET
aiti-8098	169	4	syntax	syntax	NOUN
aiti-8098	169	5	of	of	ADP
aiti-8098	169	6	user	user	NOUN
aiti-8098	169	7	-	-	PUNCT
aiti-8098	169	8	defined	define	VERB
aiti-8098	169	9	materials	material	NOUN
aiti-8098	169	10	,	,	PUNCT
aiti-8098	169	11	the	the	DET
aiti-8098	169	12	following	follow	VERB
aiti-8098	169	13	statement	statement	NOUN
aiti-8098	169	14	is	be	AUX
aiti-8098	169	15	included	include	VERB
aiti-8098	169	16	in	in	ADP
aiti-8098	169	17	the	the	DET
aiti-8098	169	18	code	code	NOUN
aiti-8098	169	19	.	.	PUNCT
aiti-8098	170	1	this	this	DET
aiti-8098	170	2	statement	statement	NOUN
aiti-8098	170	3	includes	include	VERB
aiti-8098	170	4	the	the	DET
aiti-8098	170	5	properties	property	NOUN
aiti-8098	170	6	of	of	ADP
aiti-8098	170	7	the	the	DET
aiti-8098	170	8	user	user	NOUN
aiti-8098	170	9	-	-	PUNCT
aiti-8098	170	10	defined	define	VERB
aiti-8098	170	11	graphene	graphene	NOUN
aiti-8098	170	12	material	material	NOUN
aiti-8098	170	13	:	:	PUNCT
aiti-8098	170	14	“	"	PUNCT
aiti-8098	170	15	material	material	NOUN
aiti-8098	170	16	material	material	NOUN
aiti-8098	170	17	=	=	NOUN
aiti-8098	170	18	graphene	graphene	NOUN
aiti-8098	170	19	eg300	eg300	PUNCT
aiti-8098	171	1	=	=	SYM
aiti-8098	171	2	0.7	0.7	NUM
aiti-8098	171	3	affinity	affinity	NOUN
aiti-8098	171	4	=	=	NUM
aiti-8098	171	5	4.07	4.07	NUM
aiti-8098	171	6	mun	mun	X
aiti-8098	171	7	=	=	SYM
aiti-8098	171	8	30000	30000	NUM
aiti-8098	171	9	mup	mup	NOUN
aiti-8098	171	10	=	=	SYM
aiti-8098	171	11	30000	30000	NUM
aiti-8098	171	12	nc300	nc300	PROPN
aiti-8098	171	13	=	=	SYM
aiti-8098	171	14	4.16e16	4.16e16	NUM
aiti-8098	171	15	nv300	nv300	NOUN
aiti-8098	171	16	=	=	PUNCT
aiti-8098	172	1	6.35e18	6.35e18	NUM
aiti-8098	172	2	index.file	index.file	ADJ
aiti-8098	172	3	=	=	SYM
aiti-8098	172	4	graphene.nkuser.group	graphene.nkuser.group	NOUN
aiti-8098	172	5	=	=	SYM
aiti-8098	172	6	semiconductor	semiconductor	NOUN
aiti-8098	172	7	user.default	user.default	NOUN
aiti-8098	172	8	=	=	SYM
aiti-8098	172	9	insb	insb	NOUN
aiti-8098	172	10	”	"	PUNCT
aiti-8098	172	11	.	.	PUNCT
aiti-8098	173	1	in	in	ADP
aiti-8098	173	2	this	this	DET
aiti-8098	173	3	statement	statement	NOUN
aiti-8098	173	4	,	,	PUNCT
aiti-8098	173	5	a	a	DET
aiti-8098	173	6	.nk	.nk	PUNCT
aiti-8098	173	7	file	file	NOUN
aiti-8098	173	8	for	for	ADP
aiti-8098	173	9	graphene	graphene	NOUN
aiti-8098	173	10	material	material	NOUN
aiti-8098	173	11	is	be	AUX
aiti-8098	173	12	formed	form	VERB
aiti-8098	173	13	by	by	ADP
aiti-8098	173	14	preparing	prepare	VERB
aiti-8098	173	15	a	a	DET
aiti-8098	173	16	table	table	NOUN
aiti-8098	173	17	of	of	ADP
aiti-8098	173	18	499	499	NUM
aiti-8098	173	19	entries	entry	NOUN
aiti-8098	173	20	of	of	ADP
aiti-8098	173	21	wavelength	wavelength	NOUN
aiti-8098	173	22	and	and	CCONJ
aiti-8098	173	23	its	its	PRON
aiti-8098	173	24	corresponding	corresponding	ADJ
aiti-8098	173	25	refractive	refractive	ADJ
aiti-8098	173	26	index	index	NOUN
aiti-8098	173	27	.	.	PUNCT
aiti-8098	174	1	as	as	SCONJ
aiti-8098	174	2	demonstrated	demonstrate	VERB
aiti-8098	174	3	by	by	ADP
aiti-8098	174	4	weber	weber	PROPN
aiti-8098	175	1	[	[	X
aiti-8098	175	2	26	26	NUM
aiti-8098	175	3	]	]	PUNCT
aiti-8098	175	4	,	,	PUNCT
aiti-8098	175	5	the	the	DET
aiti-8098	175	6	energy	energy	NOUN
aiti-8098	175	7	bandgap	bandgap	NOUN
aiti-8098	175	8	for	for	ADP
aiti-8098	175	9	this	this	DET
aiti-8098	175	10	simulation	simulation	NOUN
aiti-8098	175	11	is	be	AUX
aiti-8098	175	12	considered	consider	VERB
aiti-8098	175	13	0.7	0.7	NUM
aiti-8098	175	14	ev	ev	NOUN
aiti-8098	175	15	.	.	PROPN
aiti-8098	175	16	from	from	ADP
aiti-8098	175	17	these	these	DET
aiti-8098	175	18	different	different	ADJ
aiti-8098	175	19	experiments	experiment	NOUN
aiti-8098	175	20	carried	carry	VERB
aiti-8098	175	21	out	out	ADP
aiti-8098	175	22	by	by	ADP
aiti-8098	175	23	han	han	PROPN
aiti-8098	175	24	et	et	PROPN
aiti-8098	175	25	al	al	PROPN
aiti-8098	175	26	.	.	PUNCT
aiti-8098	176	1	[	[	X
aiti-8098	176	2	27	27	NUM
aiti-8098	176	3	]	]	PUNCT
aiti-8098	176	4	and	and	CCONJ
aiti-8098	176	5	chen	chen	PROPN
aiti-8098	176	6	et	et	PROPN
aiti-8098	176	7	al	al	PROPN
aiti-8098	176	8	.	.	PUNCT
aiti-8098	177	1	[	[	X
aiti-8098	177	2	28	28	NUM
aiti-8098	177	3	]	]	PUNCT
aiti-8098	177	4	,	,	PUNCT
aiti-8098	177	5	it	it	PRON
aiti-8098	177	6	is	be	AUX
aiti-8098	177	7	observed	observe	VERB
aiti-8098	177	8	that	that	SCONJ
aiti-8098	177	9	in	in	ADP
aiti-8098	177	10	gnr	gnr	PROPN
aiti-8098	177	11	,	,	PUNCT
aiti-8098	177	12	if	if	SCONJ
aiti-8098	177	13	the	the	DET
aiti-8098	177	14	ribbon	ribbon	NOUN
aiti-8098	177	15	width	width	NOUN
aiti-8098	177	16	is	be	AUX
aiti-8098	177	17	reduced	reduce	VERB
aiti-8098	177	18	below	below	ADP
aiti-8098	177	19	20	20	NUM
aiti-8098	177	20	nm	nm	NOUN
aiti-8098	177	21	,	,	PUNCT
aiti-8098	177	22	then	then	ADV
aiti-8098	177	23	a	a	DET
aiti-8098	177	24	sufficient	sufficient	ADJ
aiti-8098	177	25	energy	energy	NOUN
aiti-8098	177	26	bandgap	bandgap	NOUN
aiti-8098	177	27	can	can	AUX
aiti-8098	177	28	be	be	AUX
aiti-8098	177	29	achieved	achieve	VERB
aiti-8098	177	30	,	,	PUNCT
aiti-8098	177	31	and	and	CCONJ
aiti-8098	177	32	hence	hence	ADV
aiti-8098	177	33	the	the	DET
aiti-8098	177	34	nanoribbon	nanoribbon	NOUN
aiti-8098	177	35	device	device	NOUN
aiti-8098	177	36	can	can	AUX
aiti-8098	177	37	be	be	AUX
aiti-8098	177	38	used	use	VERB
aiti-8098	177	39	as	as	ADP
aiti-8098	177	40	the	the	DET
aiti-8098	177	41	switching	switch	VERB
aiti-8098	177	42	device	device	NOUN
aiti-8098	177	43	.	.	PUNCT
aiti-8098	178	1	1.00e-14	1.00e-14	NUM
aiti-8098	178	2	1.00e-12	1.00e-12	NUM
aiti-8098	178	3	1.00e-10	1.00e-10	NUM
aiti-8098	178	4	1.00e-08	1.00e-08	NUM
aiti-8098	178	5	1.00e-06	1.00e-06	NUM
aiti-8098	178	6	1.00e-04	1.00e-04	NUM
aiti-8098	178	7	1.00e-02	1.00e-02	NUM
aiti-8098	178	8	1.00e+00	1.00e+00	NUM
aiti-8098	178	9	0.1	0.1	NUM
aiti-8098	178	10	0.2	0.2	NUM
aiti-8098	178	11	0.3	0.3	NUM
aiti-8098	178	12	0.4	0.4	NUM
aiti-8098	178	13	0.5	0.5	NUM
aiti-8098	178	14	0.6	0.6	NUM
aiti-8098	178	15	0.7	0.7	NUM
aiti-8098	178	16	0.8	0.8	NUM
aiti-8098	178	17	0.9	0.9	NUM
aiti-8098	178	18	1	1	NUM
aiti-8098	178	19	d	d	NOUN
aiti-8098	178	20	ra	ra	PROPN
aiti-8098	178	21	in	in	ADP
aiti-8098	178	22	c	c	PROPN
aiti-8098	178	23	u	u	PROPN
aiti-8098	178	24	rr	rr	PROPN
aiti-8098	178	25	en	en	PROPN
aiti-8098	178	26	t	t	PROPN
aiti-8098	178	27	(	(	PUNCT
aiti-8098	178	28	a	a	DET
aiti-8098	178	29	/µ	/µ	ADJ
aiti-8098	178	30	m	m	NOUN
aiti-8098	178	31	)	)	PUNCT
aiti-8098	178	32	gate	gate	NOUN
aiti-8098	178	33	voltage	voltage	NOUN
aiti-8098	178	34	(	(	PUNCT
aiti-8098	178	35	v	v	NOUN
aiti-8098	178	36	)	)	PUNCT
aiti-8098	178	37	1.00e-24	1.00e-24	NUM
aiti-8098	178	38	1.00e-21	1.00e-21	NUM
aiti-8098	178	39	1.00e-18	1.00e-18	NUM
aiti-8098	178	40	1.00e-15	1.00e-15	NUM
aiti-8098	178	41	1.00e-12	1.00e-12	NUM
aiti-8098	178	42	1.00e-09	1.00e-09	NUM
aiti-8098	178	43	1.00e-06	1.00e-06	NUM
aiti-8098	178	44	1.00e-03	1.00e-03	NUM
aiti-8098	178	45	1.00e+00	1.00e+00	NUM
aiti-8098	178	46	0	0	NUM
aiti-8098	178	47	0	0	NUM
aiti-8098	179	1	.0	.0	NUM
aiti-8098	179	2	1	1	NUM
aiti-8098	179	3	0	0	NUM
aiti-8098	179	4	.0	.0	NUM
aiti-8098	180	1	3	3	NUM
aiti-8098	180	2	0	0	NUM
aiti-8098	180	3	.0	.0	NUM
aiti-8098	180	4	5	5	NUM
aiti-8098	180	5	0	0	NUM
aiti-8098	180	6	.1	.1	NUM
aiti-8098	180	7	0	0	PUNCT
aiti-8098	181	1	.2	.2	NUM
aiti-8098	181	2	0	0	NUM
aiti-8098	181	3	.3	.3	NUM
aiti-8098	181	4	0	0	NUM
aiti-8098	182	1	.4	.4	NUM
aiti-8098	182	2	0	0	NUM
aiti-8098	183	1	.5	.5	NUM
aiti-8098	183	2	0	0	NUM
aiti-8098	184	1	.6	.6	NUM
aiti-8098	184	2	0	0	NUM
aiti-8098	185	1	.7	.7	NUM
aiti-8098	185	2	0	0	NUM
aiti-8098	186	1	.8	.8	NUM
aiti-8098	186	2	0	0	PUNCT
aiti-8098	187	1	.9	.9	NUM
aiti-8098	187	2	1	1	NUM
aiti-8098	187	3	d	d	NOUN
aiti-8098	187	4	ra	ra	PROPN
aiti-8098	187	5	in	in	ADP
aiti-8098	187	6	c	c	PROPN
aiti-8098	187	7	u	u	PROPN
aiti-8098	187	8	rr	rr	PROPN
aiti-8098	187	9	en	en	PROPN
aiti-8098	187	10	t	t	PROPN
aiti-8098	187	11	(	(	PUNCT
aiti-8098	187	12	a	a	DET
aiti-8098	187	13	/µ	/µ	NOUN
aiti-8098	187	14	m	m	NOUN
aiti-8098	187	15	)	)	PUNCT
aiti-8098	187	16	drain	drain	NOUN
aiti-8098	187	17	voltage	voltage	NOUN
aiti-8098	187	18	(	(	PUNCT
aiti-8098	187	19	v	v	NOUN
aiti-8098	187	20	)	)	PUNCT
aiti-8098	187	21	si_100	si_100	VERB
aiti-8098	187	22	nm	nm	DET
aiti-8098	187	23	vgs1	vgs1	NOUN
aiti-8098	187	24	=	=	NOUN
aiti-8098	187	25	0.3	0.3	NUM
aiti-8098	187	26	v	v	NOUN
aiti-8098	187	27	si_100	si_100	NOUN
aiti-8098	187	28	nm	nm	ADV
aiti-8098	187	29	vgs2	vgs2	ADV
aiti-8098	187	30	=	=	PUNCT
aiti-8098	187	31	0.6	0.6	NUM
aiti-8098	187	32	v	v	NOUN
aiti-8098	187	33	si_100	si_100	NOUN
aiti-8098	187	34	nm	nm	DET
aiti-8098	187	35	vgs3	vgs3	NOUN
aiti-8098	187	36	=	=	NOUN
aiti-8098	187	37	1	1	NUM
aiti-8098	187	38	v	v	NUM
aiti-8098	187	39	fig	fig	NOUN
aiti-8098	187	40	.	.	PUNCT
aiti-8098	188	1	2	2	NUM
aiti-8098	188	2	id	id	ADJ
aiti-8098	188	3	-	-	PUNCT
aiti-8098	188	4	vgs	vgs	NOUN
aiti-8098	188	5	characteristics	characteristic	NOUN
aiti-8098	188	6	of	of	ADP
aiti-8098	188	7	si	si	ADJ
aiti-8098	188	8	-	-	PUNCT
aiti-8098	188	9	channel	channel	NOUN
aiti-8098	188	10	mosfet	mosfet	NOUN
aiti-8098	188	11	(	(	PUNCT
aiti-8098	188	12	100	100	NUM
aiti-8098	188	13	nm	nm	NOUN
aiti-8098	188	14	)	)	PUNCT
aiti-8098	188	15	fig	fig	NOUN
aiti-8098	188	16	.	.	PUNCT
aiti-8098	189	1	3	3	NUM
aiti-8098	189	2	id	id	NOUN
aiti-8098	189	3	-	-	PUNCT
aiti-8098	189	4	vds	vds	NOUN
aiti-8098	189	5	with	with	ADP
aiti-8098	189	6	three	three	NUM
aiti-8098	189	7	values	value	NOUN
aiti-8098	189	8	of	of	ADP
aiti-8098	189	9	vgs	vgs	NOUN
aiti-8098	189	10	and	and	CCONJ
aiti-8098	189	11	y	y	NOUN
aiti-8098	189	12	-	-	PUNCT
aiti-8098	189	13	axis	axis	NOUN
aiti-8098	189	14	with	with	ADP
aiti-8098	189	15	log	log	NOUN
aiti-8098	189	16	scale	scale	NOUN
aiti-8098	189	17	23	23	NUM
aiti-8098	189	18	advances	advance	NOUN
aiti-8098	189	19	in	in	ADP
aiti-8098	189	20	technology	technology	NOUN
aiti-8098	189	21	innovation	innovation	NOUN
aiti-8098	189	22	,	,	PUNCT
aiti-8098	189	23	vol	vol	NOUN
aiti-8098	189	24	.	.	PROPN
aiti-8098	190	1	7	7	NUM
aiti-8098	190	2	,	,	PUNCT
aiti-8098	190	3	no	no	INTJ
aiti-8098	190	4	.	.	NOUN
aiti-8098	190	5	1	1	NUM
aiti-8098	190	6	,	,	PUNCT
aiti-8098	190	7	2022	2022	NUM
aiti-8098	190	8	,	,	PUNCT
aiti-8098	190	9	pp	pp	ADJ
aiti-8098	190	10	.	.	PUNCT
aiti-8098	191	1	19	19	NUM
aiti-8098	191	2	-	-	SYM
aiti-8098	191	3	29	29	NUM
aiti-8098	191	4	4.4	4.4	NUM
aiti-8098	191	5	.	.	PUNCT
aiti-8098	192	1	defining	define	VERB
aiti-8098	192	2	graphene	graphene	NOUN
aiti-8098	192	3	structure	structure	NOUN
aiti-8098	192	4	fig	fig	NOUN
aiti-8098	192	5	.	.	PUNCT
aiti-8098	193	1	4	4	NUM
aiti-8098	193	2	shows	show	VERB
aiti-8098	193	3	the	the	DET
aiti-8098	193	4	original	original	ADJ
aiti-8098	193	5	structure	structure	NOUN
aiti-8098	193	6	of	of	ADP
aiti-8098	193	7	100	100	NUM
aiti-8098	193	8	nm	nm	PRON
aiti-8098	193	9	silicon	silicon	NOUN
aiti-8098	193	10	mosfet	mosfet	NOUN
aiti-8098	193	11	,	,	PUNCT
aiti-8098	193	12	which	which	PRON
aiti-8098	193	13	is	be	AUX
aiti-8098	193	14	modified	modify	VERB
aiti-8098	193	15	to	to	PART
aiti-8098	193	16	form	form	VERB
aiti-8098	193	17	the	the	DET
aiti-8098	193	18	graphene	graphene	NOUN
aiti-8098	193	19	fet	fet	NOUN
aiti-8098	193	20	.	.	PUNCT
aiti-8098	194	1	all	all	DET
aiti-8098	194	2	dimensions	dimension	NOUN
aiti-8098	194	3	are	be	AUX
aiti-8098	194	4	as	as	ADP
aiti-8098	194	5	per	per	ADP
aiti-8098	194	6	the	the	DET
aiti-8098	194	7	silicon	silicon	NOUN
aiti-8098	194	8	100	100	NUM
aiti-8098	194	9	nm	nm	NOUN
aiti-8098	194	10	design	design	NOUN
aiti-8098	194	11	;	;	PUNCT
aiti-8098	194	12	only	only	ADV
aiti-8098	194	13	the	the	DET
aiti-8098	194	14	channel	channel	NOUN
aiti-8098	194	15	material	material	NOUN
aiti-8098	194	16	from	from	ADP
aiti-8098	194	17	200	200	NUM
aiti-8098	194	18	nm	nm	NOUN
aiti-8098	194	19	to	to	ADP
aiti-8098	194	20	300	300	NUM
aiti-8098	194	21	nm	nm	NOUN
aiti-8098	194	22	in	in	ADP
aiti-8098	194	23	x	x	NOUN
aiti-8098	194	24	-	-	NOUN
aiti-8098	194	25	direction	direction	NOUN
aiti-8098	194	26	and	and	CCONJ
aiti-8098	194	27	the	the	DET
aiti-8098	194	28	one	one	NOUN
aiti-8098	194	29	from	from	ADP
aiti-8098	194	30	5	5	NUM
aiti-8098	194	31	nm	nm	NOUN
aiti-8098	194	32	to	to	ADP
aiti-8098	194	33	20	20	NUM
aiti-8098	194	34	nm	nm	NOUN
aiti-8098	194	35	in	in	ADP
aiti-8098	194	36	y	y	NOUN
aiti-8098	194	37	-	-	PUNCT
aiti-8098	194	38	direction	direction	NOUN
aiti-8098	194	39	are	be	AUX
aiti-8098	194	40	replaced	replace	VERB
aiti-8098	194	41	with	with	ADP
aiti-8098	194	42	the	the	DET
aiti-8098	194	43	user	user	NOUN
aiti-8098	194	44	-	-	PUNCT
aiti-8098	194	45	defined	define	VERB
aiti-8098	194	46	graphene	graphene	NOUN
aiti-8098	194	47	material	material	NOUN
aiti-8098	194	48	.	.	PUNCT
aiti-8098	195	1	fig	fig	NOUN
aiti-8098	195	2	.	.	PUNCT
aiti-8098	196	1	5	5	NUM
aiti-8098	196	2	shows	show	VERB
aiti-8098	196	3	the	the	DET
aiti-8098	196	4	id	id	PROPN
aiti-8098	196	5	-	-	PUNCT
aiti-8098	196	6	vgs	vgs	NOUN
aiti-8098	196	7	curve	curve	NOUN
aiti-8098	196	8	by	by	ADP
aiti-8098	196	9	varying	vary	VERB
aiti-8098	196	10	the	the	DET
aiti-8098	196	11	vgs	vgs	NOUN
aiti-8098	196	12	values	value	NOUN
aiti-8098	196	13	from	from	ADP
aiti-8098	196	14	0	0	NUM
aiti-8098	196	15	v	v	NOUN
aiti-8098	196	16	to	to	ADP
aiti-8098	196	17	1	1	NUM
aiti-8098	196	18	v	v	NOUN
aiti-8098	196	19	with	with	ADP
aiti-8098	196	20	a	a	DET
aiti-8098	196	21	step	step	NOUN
aiti-8098	196	22	of	of	ADP
aiti-8098	196	23	0.1	0.1	NUM
aiti-8098	196	24	v.	v.	ADP
aiti-8098	196	25	it	it	PRON
aiti-8098	196	26	has	have	VERB
aiti-8098	196	27	a	a	DET
aiti-8098	196	28	close	close	ADJ
aiti-8098	196	29	agreement	agreement	NOUN
aiti-8098	196	30	with	with	ADP
aiti-8098	196	31	conventional	conventional	ADJ
aiti-8098	196	32	mosfets	mosfet	NOUN
aiti-8098	196	33	.	.	PUNCT
aiti-8098	197	1	fig	fig	NOUN
aiti-8098	197	2	.	.	PUNCT
aiti-8098	198	1	6	6	NUM
aiti-8098	198	2	shows	show	VERB
aiti-8098	198	3	the	the	DET
aiti-8098	198	4	family	family	NOUN
aiti-8098	198	5	of	of	ADP
aiti-8098	198	6	id	id	PROPN
aiti-8098	198	7	-	-	PUNCT
aiti-8098	198	8	vds	vds	NOUN
aiti-8098	198	9	curve	curve	NOUN
aiti-8098	198	10	for	for	ADP
aiti-8098	198	11	three	three	NUM
aiti-8098	198	12	different	different	ADJ
aiti-8098	198	13	gate	gate	NOUN
aiti-8098	198	14	voltages	voltage	NOUN
aiti-8098	198	15	,	,	PUNCT
aiti-8098	198	16	i.e.	i.e.	X
aiti-8098	198	17	,	,	PUNCT
aiti-8098	198	18	vgs1	vgs1	NOUN
aiti-8098	198	19	=	=	NOUN
aiti-8098	198	20	0.3	0.3	NUM
aiti-8098	198	21	v	v	NOUN
aiti-8098	198	22	,	,	PUNCT
aiti-8098	198	23	vgs2	vgs2	ADJ
aiti-8098	198	24	=	=	PUNCT
aiti-8098	198	25	0.6	0.6	NUM
aiti-8098	198	26	v	v	NOUN
aiti-8098	198	27	,	,	PUNCT
aiti-8098	198	28	and	and	CCONJ
aiti-8098	198	29	vgs3	vgs3	NOUN
aiti-8098	198	30	=	=	SYM
aiti-8098	198	31	1	1	NUM
aiti-8098	198	32	v.	v.	ADP
aiti-8098	198	33	this	this	DET
aiti-8098	198	34	curve	curve	NOUN
aiti-8098	198	35	shows	show	VERB
aiti-8098	198	36	that	that	SCONJ
aiti-8098	198	37	the	the	DET
aiti-8098	198	38	graphene	graphene	NOUN
aiti-8098	198	39	fet	fet	NOUN
aiti-8098	198	40	enters	enter	VERB
aiti-8098	198	41	into	into	ADP
aiti-8098	198	42	the	the	DET
aiti-8098	198	43	saturation	saturation	NOUN
aiti-8098	198	44	region	region	NOUN
aiti-8098	198	45	and	and	CCONJ
aiti-8098	198	46	works	work	VERB
aiti-8098	198	47	like	like	ADP
aiti-8098	198	48	a	a	DET
aiti-8098	198	49	normal	normal	ADJ
aiti-8098	198	50	silicon	silicon	NOUN
aiti-8098	198	51	mosfet	mosfet	NOUN
aiti-8098	198	52	.	.	PUNCT
aiti-8098	199	1	fig	fig	NOUN
aiti-8098	199	2	.	.	PUNCT
aiti-8098	200	1	4	4	NUM
aiti-8098	200	2	structure	structure	NOUN
aiti-8098	200	3	of	of	ADP
aiti-8098	200	4	100	100	NUM
aiti-8098	200	5	nm	nm	ADJ
aiti-8098	200	6	graphene	graphene	NOUN
aiti-8098	200	7	channel	channel	NOUN
aiti-8098	200	8	fet	fet	PROPN
aiti-8098	200	9	fig	fig	PROPN
aiti-8098	200	10	.	.	PUNCT
aiti-8098	201	1	5	5	NUM
aiti-8098	201	2	id	id	ADJ
aiti-8098	201	3	-	-	PUNCT
aiti-8098	201	4	vgs	vgs	NOUN
aiti-8098	201	5	curve	curve	NOUN
aiti-8098	201	6	for	for	ADP
aiti-8098	201	7	100	100	NUM
aiti-8098	201	8	nm	nm	ADJ
aiti-8098	201	9	graphene	graphene	NOUN
aiti-8098	201	10	channel	channel	NOUN
aiti-8098	201	11	fet	fet	PROPN
aiti-8098	201	12	5	5	NUM
aiti-8098	201	13	.	.	PUNCT
aiti-8098	202	1	design	design	NOUN
aiti-8098	202	2	of	of	ADP
aiti-8098	202	3	device	device	NOUN
aiti-8098	202	4	having	have	VERB
aiti-8098	202	5	20	20	NUM
aiti-8098	202	6	nm	nm	ADJ
aiti-8098	202	7	channel	channel	NOUN
aiti-8098	202	8	length	length	NOUN
aiti-8098	202	9	5.1	5.1	NUM
aiti-8098	202	10	.	.	PUNCT
aiti-8098	203	1	design	design	NOUN
aiti-8098	203	2	of	of	ADP
aiti-8098	203	3	graphene	graphene	ADJ
aiti-8098	203	4	fet	fet	NOUN
aiti-8098	203	5	with	with	ADP
aiti-8098	203	6	20	20	NUM
aiti-8098	203	7	nm	nm	ADJ
aiti-8098	203	8	channel	channel	NOUN
aiti-8098	203	9	length	length	NOUN
aiti-8098	203	10	the	the	DET
aiti-8098	203	11	graphene	graphene	ADJ
aiti-8098	203	12	channel	channel	NOUN
aiti-8098	203	13	mosfet	mosfet	NOUN
aiti-8098	203	14	is	be	AUX
aiti-8098	203	15	designed	design	VERB
aiti-8098	203	16	.	.	PUNCT
aiti-8098	204	1	as	as	SCONJ
aiti-8098	204	2	shown	show	VERB
aiti-8098	204	3	in	in	ADP
aiti-8098	204	4	fig	fig	NOUN
aiti-8098	204	5	.	.	PUNCT
aiti-8098	205	1	7	7	NUM
aiti-8098	205	2	,	,	PUNCT
aiti-8098	205	3	the	the	DET
aiti-8098	205	4	original	original	ADJ
aiti-8098	205	5	100	100	NUM
aiti-8098	205	6	nm	nm	ADJ
aiti-8098	205	7	device	device	NOUN
aiti-8098	205	8	is	be	AUX
aiti-8098	205	9	scaled	scale	VERB
aiti-8098	205	10	down	down	ADP
aiti-8098	205	11	to	to	ADP
aiti-8098	205	12	20	20	NUM
aiti-8098	205	13	nm	nm	PRON
aiti-8098	205	14	device	device	NOUN
aiti-8098	205	15	by	by	ADP
aiti-8098	205	16	keeping	keep	VERB
aiti-8098	205	17	the	the	DET
aiti-8098	205	18	aspect	aspect	NOUN
aiti-8098	205	19	ratio	ratio	NOUN
aiti-8098	205	20	.	.	PUNCT
aiti-8098	206	1	the	the	DET
aiti-8098	206	2	total	total	ADJ
aiti-8098	206	3	length	length	NOUN
aiti-8098	206	4	of	of	ADP
aiti-8098	206	5	the	the	DET
aiti-8098	206	6	device	device	NOUN
aiti-8098	206	7	in	in	ADP
aiti-8098	206	8	x	x	NOUN
aiti-8098	206	9	-	-	NOUN
aiti-8098	206	10	direction	direction	NOUN
aiti-8098	206	11	is	be	AUX
aiti-8098	206	12	100	100	NUM
aiti-8098	206	13	nm	nm	NOUN
aiti-8098	206	14	and	and	CCONJ
aiti-8098	206	15	the	the	DET
aiti-8098	206	16	height	height	NOUN
aiti-8098	206	17	of	of	ADP
aiti-8098	206	18	the	the	DET
aiti-8098	206	19	device	device	NOUN
aiti-8098	206	20	in	in	ADP
aiti-8098	206	21	y	y	NOUN
aiti-8098	206	22	-	-	PUNCT
aiti-8098	206	23	direction	direction	NOUN
aiti-8098	206	24	is	be	AUX
aiti-8098	206	25	13	13	NUM
aiti-8098	206	26	nm	nm	NOUN
aiti-8098	206	27	,	,	PUNCT
aiti-8098	206	28	thus	thus	ADV
aiti-8098	206	29	a	a	DET
aiti-8098	206	30	proper	proper	ADJ
aiti-8098	206	31	aspect	aspect	NOUN
aiti-8098	206	32	ratio	ratio	NOUN
aiti-8098	206	33	is	be	AUX
aiti-8098	206	34	maintained	maintain	VERB
aiti-8098	206	35	.	.	PUNCT
aiti-8098	207	1	the	the	DET
aiti-8098	207	2	source	source	NOUN
aiti-8098	207	3	terminal	terminal	NOUN
aiti-8098	207	4	length	length	NOUN
aiti-8098	207	5	in	in	ADP
aiti-8098	207	6	x	x	NOUN
aiti-8098	207	7	-	-	NOUN
aiti-8098	207	8	direction	direction	NOUN
aiti-8098	207	9	ranges	range	VERB
aiti-8098	207	10	from	from	ADP
aiti-8098	207	11	0	0	NUM
aiti-8098	207	12	to	to	ADP
aiti-8098	207	13	40	40	NUM
aiti-8098	207	14	nm	nm	NOUN
aiti-8098	207	15	and	and	CCONJ
aiti-8098	207	16	the	the	DET
aiti-8098	207	17	contact	contact	NOUN
aiti-8098	207	18	of	of	ADP
aiti-8098	207	19	the	the	DET
aiti-8098	207	20	source	source	NOUN
aiti-8098	207	21	ranges	range	VERB
aiti-8098	207	22	from	from	ADP
aiti-8098	207	23	0	0	NUM
aiti-8098	207	24	to	to	PART
aiti-8098	207	25	20	20	NUM
aiti-8098	207	26	nm	nm	NOUN
aiti-8098	207	27	.	.	PUNCT
aiti-8098	208	1	the	the	DET
aiti-8098	208	2	channel	channel	NOUN
aiti-8098	208	3	region	region	NOUN
aiti-8098	208	4	is	be	AUX
aiti-8098	208	5	formed	form	VERB
aiti-8098	208	6	between	between	ADP
aiti-8098	208	7	40	40	NUM
aiti-8098	208	8	nm	nm	NOUN
aiti-8098	208	9	to	to	ADP
aiti-8098	208	10	50	50	NUM
aiti-8098	208	11	nm	nm	NOUN
aiti-8098	208	12	in	in	ADP
aiti-8098	208	13	x	x	NOUN
aiti-8098	208	14	-	-	NOUN
aiti-8098	208	15	direction	direction	NOUN
aiti-8098	208	16	with	with	ADP
aiti-8098	208	17	a	a	DET
aiti-8098	208	18	height	height	NOUN
aiti-8098	208	19	of	of	ADP
aiti-8098	208	20	20	20	NUM
aiti-8098	208	21	nm	nm	NOUN
aiti-8098	208	22	in	in	ADP
aiti-8098	208	23	y	y	NOUN
aiti-8098	208	24	-	-	NOUN
aiti-8098	208	25	direction	direction	NOUN
aiti-8098	208	26	.	.	PUNCT
aiti-8098	209	1	the	the	DET
aiti-8098	209	2	drain	drain	NOUN
aiti-8098	209	3	region	region	NOUN
aiti-8098	209	4	starts	start	VERB
aiti-8098	209	5	from	from	ADP
aiti-8098	209	6	60	60	NUM
aiti-8098	209	7	nm	nm	PUNCT
aiti-8098	209	8	and	and	CCONJ
aiti-8098	209	9	ends	end	VERB
aiti-8098	209	10	at	at	ADP
aiti-8098	209	11	100	100	NUM
aiti-8098	209	12	nm	nm	NOUN
aiti-8098	209	13	,	,	PUNCT
aiti-8098	209	14	and	and	CCONJ
aiti-8098	209	15	the	the	DET
aiti-8098	209	16	drain	drain	NOUN
aiti-8098	209	17	contact	contact	NOUN
aiti-8098	209	18	starts	start	VERB
aiti-8098	209	19	from	from	ADP
aiti-8098	209	20	80	80	NUM
aiti-8098	209	21	nm	nm	NOUN
aiti-8098	209	22	to	to	ADP
aiti-8098	209	23	100	100	NUM
aiti-8098	209	24	nm	nm	NOUN
aiti-8098	209	25	in	in	ADP
aiti-8098	209	26	x	x	NOUN
aiti-8098	209	27	-	-	NOUN
aiti-8098	209	28	direction	direction	NOUN
aiti-8098	209	29	.	.	PUNCT
aiti-8098	210	1	hfo2	hfo2	NOUN
aiti-8098	210	2	dielectric	dielectric	ADJ
aiti-8098	210	3	material	material	NOUN
aiti-8098	210	4	is	be	AUX
aiti-8098	210	5	deposited	deposit	VERB
aiti-8098	210	6	with	with	ADP
aiti-8098	210	7	2	2	NUM
aiti-8098	210	8	nm	nm	NOUN
aiti-8098	210	9	thickness	thickness	NOUN
aiti-8098	210	10	;	;	PUNCT
aiti-8098	210	11	it	it	PRON
aiti-8098	210	12	ranges	range	VERB
aiti-8098	210	13	from	from	ADP
aiti-8098	210	14	37.5	37.5	NUM
aiti-8098	210	15	nm	nm	NOUN
aiti-8098	210	16	to	to	ADP
aiti-8098	210	17	62.5	62.5	NUM
aiti-8098	210	18	nm	nm	NOUN
aiti-8098	210	19	over	over	ADP
aiti-8098	210	20	the	the	DET
aiti-8098	210	21	channel	channel	NOUN
aiti-8098	210	22	region	region	NOUN
aiti-8098	210	23	.	.	PUNCT
aiti-8098	211	1	the	the	DET
aiti-8098	211	2	contact	contact	NOUN
aiti-8098	211	3	of	of	ADP
aiti-8098	211	4	2	2	NUM
aiti-8098	211	5	nm	nm	NOUN
aiti-8098	211	6	thickness	thickness	NOUN
aiti-8098	211	7	is	be	AUX
aiti-8098	211	8	used	use	VERB
aiti-8098	211	9	to	to	PART
aiti-8098	211	10	apply	apply	VERB
aiti-8098	211	11	gate	gate	NOUN
aiti-8098	211	12	voltage	voltage	NOUN
aiti-8098	211	13	.	.	PUNCT
aiti-8098	212	1	the	the	DET
aiti-8098	212	2	bulk	bulk	NOUN
aiti-8098	212	3	starts	start	VERB
aiti-8098	212	4	from	from	ADP
aiti-8098	212	5	4	4	NUM
aiti-8098	212	6	nm	nm	NOUN
aiti-8098	212	7	to	to	ADP
aiti-8098	212	8	13	13	NUM
aiti-8098	212	9	nm	nm	NOUN
aiti-8098	212	10	in	in	ADP
aiti-8098	212	11	y	y	NOUN
aiti-8098	212	12	-	-	NOUN
aiti-8098	212	13	direction	direction	NOUN
aiti-8098	212	14	.	.	PUNCT
aiti-8098	213	1	the	the	DET
aiti-8098	213	2	default	default	NOUN
aiti-8098	213	3	body	body	NOUN
aiti-8098	213	4	voltage	voltage	NOUN
aiti-8098	213	5	is	be	AUX
aiti-8098	213	6	zero	zero	NUM
aiti-8098	213	7	.	.	PUNCT
aiti-8098	213	8	fig	fig	NOUN
aiti-8098	213	9	.	.	PUNCT
aiti-8098	214	1	8	8	NUM
aiti-8098	214	2	shows	show	VERB
aiti-8098	214	3	id	id	ADJ
aiti-8098	214	4	-	-	PUNCT
aiti-8098	214	5	vgs	vgs	NOUN
aiti-8098	214	6	characteristics	characteristic	NOUN
aiti-8098	214	7	of	of	ADP
aiti-8098	214	8	the	the	DET
aiti-8098	214	9	graphene	graphene	ADJ
aiti-8098	214	10	fet	fet	NOUN
aiti-8098	214	11	for	for	ADP
aiti-8098	214	12	vds	vds	PROPN
aiti-8098	214	13	=	=	PROPN
aiti-8098	214	14	0.8	0.8	NUM
aiti-8098	214	15	v	v	NOUN
aiti-8098	214	16	,	,	PUNCT
aiti-8098	214	17	and	and	CCONJ
aiti-8098	214	18	fig	fig	NOUN
aiti-8098	214	19	.	.	PUNCT
aiti-8098	215	1	9	9	NUM
aiti-8098	215	2	shows	show	VERB
aiti-8098	215	3	id	id	ADJ
aiti-8098	215	4	-	-	PUNCT
aiti-8098	215	5	vds	vds	NOUN
aiti-8098	215	6	characteristics	characteristic	NOUN
aiti-8098	215	7	for	for	ADP
aiti-8098	215	8	three	three	NUM
aiti-8098	215	9	different	different	ADJ
aiti-8098	215	10	gate	gate	NOUN
aiti-8098	215	11	voltages	voltage	NOUN
aiti-8098	215	12	,	,	PUNCT
aiti-8098	215	13	i.e.	i.e.	X
aiti-8098	215	14	,	,	PUNCT
aiti-8098	215	15	vgs1	vgs1	NOUN
aiti-8098	215	16	=	=	NOUN
aiti-8098	215	17	0.3	0.3	NUM
aiti-8098	215	18	v	v	NOUN
aiti-8098	215	19	,	,	PUNCT
aiti-8098	215	20	vgs2	vgs2	ADJ
aiti-8098	215	21	=	=	PUNCT
aiti-8098	215	22	0.6	0.6	NUM
aiti-8098	215	23	v	v	NOUN
aiti-8098	215	24	,	,	PUNCT
aiti-8098	215	25	and	and	CCONJ
aiti-8098	215	26	vgs3	vgs3	NOUN
aiti-8098	215	27	=	=	PUNCT
aiti-8098	215	28	0.8	0.8	NUM
aiti-8098	215	29	v.	v.	ADP
aiti-8098	215	30	the	the	DET
aiti-8098	215	31	device	device	NOUN
aiti-8098	215	32	offers	offer	VERB
aiti-8098	215	33	more	more	ADJ
aiti-8098	215	34	i	i	PROPN
aiti-8098	215	35	d	d	PROPN
aiti-8098	215	36	for	for	ADP
aiti-8098	215	37	vgs	vgs	NOUN
aiti-8098	215	38	=	=	PUNCT
aiti-8098	215	39	0.8	0.8	NUM
aiti-8098	215	40	v.	v.	ADP
aiti-8098	215	41	1.00e-13	1.00e-13	NUM
aiti-8098	215	42	1.00e-12	1.00e-12	NUM
aiti-8098	215	43	1.00e-11	1.00e-11	NUM
aiti-8098	215	44	1.00e-10	1.00e-10	NUM
aiti-8098	215	45	1.00e-09	1.00e-09	NUM
aiti-8098	215	46	1.00e-08	1.00e-08	NUM
aiti-8098	215	47	1.00e-07	1.00e-07	NUM
aiti-8098	215	48	1.00e-06	1.00e-06	NUM
aiti-8098	215	49	1.00e-05	1.00e-05	NUM
aiti-8098	215	50	1.00e-04	1.00e-04	NUM
aiti-8098	215	51	1.00e-03	1.00e-03	NUM
aiti-8098	215	52	1.00e-02	1.00e-02	NUM
aiti-8098	215	53	1.00e-01	1.00e-01	NUM
aiti-8098	215	54	1.00e+00	1.00e+00	NUM
aiti-8098	215	55	0.00	0.00	NUM
aiti-8098	215	56	0.10	0.10	NUM
aiti-8098	215	57	0.20	0.20	NUM
aiti-8098	215	58	0.30	0.30	NUM
aiti-8098	215	59	0.40	0.40	NUM
aiti-8098	215	60	0.50	0.50	NUM
aiti-8098	215	61	0.60	0.60	NUM
aiti-8098	215	62	0.70	0.70	NUM
aiti-8098	215	63	0.80	0.80	NUM
aiti-8098	215	64	0.90	0.90	NUM
aiti-8098	215	65	1.00	1.00	NUM
aiti-8098	215	66	d	d	NOUN
aiti-8098	215	67	ra	ra	PROPN
aiti-8098	215	68	in	in	ADP
aiti-8098	215	69	c	c	PROPN
aiti-8098	215	70	u	u	PROPN
aiti-8098	215	71	rr	rr	PROPN
aiti-8098	215	72	en	en	PROPN
aiti-8098	215	73	t	t	PROPN
aiti-8098	215	74	(	(	PUNCT
aiti-8098	215	75	a	a	DET
aiti-8098	215	76	/µ	/µ	ADJ
aiti-8098	215	77	m	m	NOUN
aiti-8098	215	78	)	)	PUNCT
aiti-8098	215	79	gate	gate	NOUN
aiti-8098	215	80	voltage	voltage	NOUN
aiti-8098	215	81	(	(	PUNCT
aiti-8098	215	82	v	v	NOUN
aiti-8098	215	83	)	)	PUNCT
aiti-8098	215	84	1.00e-15	1.00e-15	NUM
aiti-8098	215	85	1.00e-14	1.00e-14	NUM
aiti-8098	215	86	1.00e-13	1.00e-13	NUM
aiti-8098	215	87	1.00e-12	1.00e-12	NUM
aiti-8098	215	88	1.00e-11	1.00e-11	NUM
aiti-8098	215	89	1.00e-10	1.00e-10	NUM
aiti-8098	215	90	1.00e-09	1.00e-09	NUM
aiti-8098	215	91	1.00e-08	1.00e-08	NUM
aiti-8098	215	92	1.00e-07	1.00e-07	NUM
aiti-8098	215	93	1.00e-06	1.00e-06	NUM
aiti-8098	215	94	d	d	SYM
aiti-8098	215	95	ra	ra	PROPN
aiti-8098	215	96	in	in	ADP
aiti-8098	215	97	c	c	PROPN
aiti-8098	215	98	u	u	PROPN
aiti-8098	215	99	rr	rr	PROPN
aiti-8098	215	100	en	en	PROPN
aiti-8098	215	101	t	t	PROPN
aiti-8098	215	102	(	(	PUNCT
aiti-8098	215	103	a	a	DET
aiti-8098	215	104	/µ	/µ	NOUN
aiti-8098	215	105	m	m	NOUN
aiti-8098	215	106	)	)	PUNCT
aiti-8098	215	107	drain	drain	NOUN
aiti-8098	215	108	voltage	voltage	NOUN
aiti-8098	215	109	(	(	PUNCT
aiti-8098	215	110	v	v	NOUN
aiti-8098	215	111	)	)	PUNCT
aiti-8098	215	112	drain	drain	NOUN
aiti-8098	215	113	current	current	ADJ
aiti-8098	215	114	(	(	PUNCT
aiti-8098	215	115	vgs1	vgs1	NOUN
aiti-8098	215	116	=	=	NOUN
aiti-8098	215	117	0.3	0.3	NUM
aiti-8098	215	118	v	v	NOUN
aiti-8098	215	119	)	)	PUNCT
aiti-8098	215	120	drain	drain	NOUN
aiti-8098	215	121	current	current	ADJ
aiti-8098	216	1	(	(	PUNCT
aiti-8098	216	2	vgs2	vgs2	ADJ
aiti-8098	216	3	=	=	PUNCT
aiti-8098	216	4	0.6	0.6	NUM
aiti-8098	216	5	v	v	NOUN
aiti-8098	216	6	)	)	PUNCT
aiti-8098	216	7	drain	drain	NOUN
aiti-8098	216	8	current	current	ADJ
aiti-8098	216	9	(	(	PUNCT
aiti-8098	216	10	vgs3	vgs3	NOUN
aiti-8098	216	11	=	=	SYM
aiti-8098	216	12	1	1	NUM
aiti-8098	216	13	v	v	NOUN
aiti-8098	216	14	)	)	PUNCT
aiti-8098	216	15	fig	fig	NOUN
aiti-8098	216	16	.	.	PUNCT
aiti-8098	217	1	6	6	NUM
aiti-8098	217	2	id	id	ADJ
aiti-8098	217	3	-	-	PUNCT
aiti-8098	217	4	vds	vds	NOUN
aiti-8098	217	5	characteristics	characteristic	NOUN
aiti-8098	217	6	for	for	ADP
aiti-8098	217	7	three	three	NUM
aiti-8098	217	8	gate	gate	NOUN
aiti-8098	217	9	voltages	voltage	NOUN
aiti-8098	217	10	24	24	NUM
aiti-8098	217	11	advances	advance	NOUN
aiti-8098	217	12	in	in	ADP
aiti-8098	217	13	technology	technology	NOUN
aiti-8098	217	14	innovation	innovation	NOUN
aiti-8098	217	15	,	,	PUNCT
aiti-8098	217	16	vol	vol	NOUN
aiti-8098	217	17	.	.	PROPN
aiti-8098	217	18	7	7	NUM
aiti-8098	217	19	,	,	PUNCT
aiti-8098	217	20	no	no	INTJ
aiti-8098	217	21	.	.	NOUN
aiti-8098	217	22	1	1	NUM
aiti-8098	217	23	,	,	PUNCT
aiti-8098	217	24	2022	2022	NUM
aiti-8098	217	25	,	,	PUNCT
aiti-8098	217	26	pp	pp	ADJ
aiti-8098	217	27	.	.	PUNCT
aiti-8098	218	1	19	19	NUM
aiti-8098	218	2	-	-	SYM
aiti-8098	218	3	29	29	NUM
aiti-8098	218	4	fig	fig	NOUN
aiti-8098	218	5	.	.	PUNCT
aiti-8098	219	1	7	7	NUM
aiti-8098	219	2	structure	structure	NOUN
aiti-8098	219	3	of	of	ADP
aiti-8098	219	4	20	20	NUM
aiti-8098	219	5	nm	nm	ADJ
aiti-8098	219	6	graphene	graphene	NOUN
aiti-8098	219	7	channel	channel	NOUN
aiti-8098	219	8	fet	fet	PROPN
aiti-8098	219	9	fig	fig	PROPN
aiti-8098	219	10	.	.	PUNCT
aiti-8098	220	1	8	8	NUM
aiti-8098	220	2	id	id	NUM
aiti-8098	220	3	-	-	PUNCT
aiti-8098	220	4	vgs	vgs	NOUN
aiti-8098	220	5	curve	curve	NOUN
aiti-8098	220	6	of	of	ADP
aiti-8098	220	7	20	20	NUM
aiti-8098	220	8	nm	nm	ADJ
aiti-8098	220	9	graphene	graphene	NOUN
aiti-8098	220	10	channel	channel	NOUN
aiti-8098	220	11	fet	fet	PROPN
aiti-8098	220	12	5.2	5.2	NUM
aiti-8098	220	13	.	.	PUNCT
aiti-8098	221	1	design	design	NOUN
aiti-8098	221	2	of	of	ADP
aiti-8098	221	3	20	20	NUM
aiti-8098	221	4	nm	nm	PRON
aiti-8098	221	5	silicon	silicon	NOUN
aiti-8098	221	6	channel	channel	NOUN
aiti-8098	221	7	mosfet	mosfet	VERB
aiti-8098	221	8	the	the	DET
aiti-8098	221	9	implementation	implementation	NOUN
aiti-8098	221	10	of	of	ADP
aiti-8098	221	11	a	a	DET
aiti-8098	221	12	20	20	NUM
aiti-8098	221	13	nm	nm	PRON
aiti-8098	221	14	silicon	silicon	NOUN
aiti-8098	221	15	channel	channel	NOUN
aiti-8098	221	16	mosfet	mosfet	NOUN
aiti-8098	221	17	is	be	AUX
aiti-8098	221	18	designed	design	VERB
aiti-8098	221	19	and	and	CCONJ
aiti-8098	221	20	simulated	simulate	VERB
aiti-8098	221	21	to	to	PART
aiti-8098	221	22	compare	compare	VERB
aiti-8098	221	23	to	to	ADP
aiti-8098	221	24	the	the	DET
aiti-8098	221	25	results	result	NOUN
aiti-8098	221	26	with	with	ADP
aiti-8098	221	27	the	the	DET
aiti-8098	221	28	20	20	NUM
aiti-8098	221	29	nm	nm	ADJ
aiti-8098	221	30	graphene	graphene	NOUN
aiti-8098	221	31	channel	channel	NOUN
aiti-8098	221	32	fet	fet	PROPN
aiti-8098	221	33	.	.	PUNCT
aiti-8098	222	1	the	the	DET
aiti-8098	222	2	structure	structure	NOUN
aiti-8098	222	3	is	be	AUX
aiti-8098	222	4	shown	show	VERB
aiti-8098	222	5	in	in	ADP
aiti-8098	222	6	fig	fig	NOUN
aiti-8098	222	7	.	.	PUNCT
aiti-8098	223	1	10	10	NUM
aiti-8098	223	2	.	.	PUNCT
aiti-8098	224	1	the	the	DET
aiti-8098	224	2	channel	channel	NOUN
aiti-8098	224	3	is	be	AUX
aiti-8098	224	4	replaced	replace	VERB
aiti-8098	224	5	with	with	ADP
aiti-8098	224	6	silicon	silicon	NOUN
aiti-8098	224	7	material	material	NOUN
aiti-8098	224	8	and	and	CCONJ
aiti-8098	224	9	hfo2	hfo2	NOUN
aiti-8098	224	10	is	be	AUX
aiti-8098	224	11	used	use	VERB
aiti-8098	224	12	as	as	ADP
aiti-8098	224	13	the	the	DET
aiti-8098	224	14	dielectric	dielectric	NOUN
aiti-8098	224	15	.	.	PUNCT
aiti-8098	225	1	in	in	ADP
aiti-8098	225	2	the	the	DET
aiti-8098	225	3	id	id	PROPN
aiti-8098	225	4	-	-	PUNCT
aiti-8098	225	5	vgs	vgs	NOUN
aiti-8098	225	6	characteristics	characteristic	NOUN
aiti-8098	225	7	for	for	ADP
aiti-8098	225	8	vds	vds	PROPN
aiti-8098	225	9	=	=	SYM
aiti-8098	225	10	0.8v	0.8v	PROPN
aiti-8098	225	11	,	,	PUNCT
aiti-8098	225	12	i	i	PROPN
aiti-8098	225	13	d	d	PROPN
aiti-8098	225	14	increases	increase	VERB
aiti-8098	225	15	linearly	linearly	ADV
aiti-8098	225	16	with	with	ADP
aiti-8098	225	17	an	an	DET
aiti-8098	225	18	increase	increase	NOUN
aiti-8098	225	19	in	in	ADP
aiti-8098	225	20	vgs	vgs	NOUN
aiti-8098	225	21	after	after	ADP
aiti-8098	225	22	vth	vth	NOUN
aiti-8098	225	23	.	.	PUNCT
aiti-8098	226	1	in	in	ADP
aiti-8098	226	2	the	the	DET
aiti-8098	226	3	id	id	PROPN
aiti-8098	226	4	-	-	PUNCT
aiti-8098	226	5	vds	vds	NOUN
aiti-8098	226	6	curve	curve	NOUN
aiti-8098	226	7	for	for	ADP
aiti-8098	226	8	vgs1	vgs1	NOUN
aiti-8098	226	9	=	=	PUNCT
aiti-8098	226	10	0.3	0.3	NUM
aiti-8098	226	11	v	v	NOUN
aiti-8098	226	12	,	,	PUNCT
aiti-8098	226	13	vgs2	vgs2	ADJ
aiti-8098	226	14	=	=	PUNCT
aiti-8098	226	15	0.6	0.6	NUM
aiti-8098	226	16	v	v	NOUN
aiti-8098	226	17	,	,	PUNCT
aiti-8098	226	18	and	and	CCONJ
aiti-8098	226	19	vgs3	vgs3	NOUN
aiti-8098	226	20	=	=	NUM
aiti-8098	226	21	0.8	0.8	NUM
aiti-8098	226	22	v	v	NOUN
aiti-8098	226	23	,	,	PUNCT
aiti-8098	226	24	the	the	DET
aiti-8098	226	25	small	small	ADJ
aiti-8098	226	26	geometry	geometry	NOUN
aiti-8098	226	27	silicon	silicon	NOUN
aiti-8098	226	28	device	device	NOUN
aiti-8098	226	29	enters	enter	VERB
aiti-8098	226	30	into	into	ADP
aiti-8098	226	31	the	the	DET
aiti-8098	226	32	saturation	saturation	NOUN
aiti-8098	226	33	region	region	NOUN
aiti-8098	226	34	after	after	ADP
aiti-8098	226	35	a	a	DET
aiti-8098	226	36	pinch	pinch	NOUN
aiti-8098	226	37	-	-	PUNCT
aiti-8098	226	38	off	off	ADP
aiti-8098	226	39	point	point	NOUN
aiti-8098	226	40	.	.	PUNCT
aiti-8098	227	1	the	the	DET
aiti-8098	227	2	characteristics	characteristic	NOUN
aiti-8098	227	3	of	of	ADP
aiti-8098	227	4	the	the	DET
aiti-8098	227	5	20	20	NUM
aiti-8098	227	6	nm	nm	ADJ
aiti-8098	227	7	silicon	silicon	NOUN
aiti-8098	227	8	channel	channel	PROPN
aiti-8098	227	9	mosfet	mosfet	NOUN
aiti-8098	227	10	are	be	AUX
aiti-8098	227	11	embedded	embed	VERB
aiti-8098	227	12	with	with	ADP
aiti-8098	227	13	the	the	DET
aiti-8098	227	14	20	20	NUM
aiti-8098	227	15	nm	nm	ADJ
aiti-8098	227	16	graphene	graphene	NOUN
aiti-8098	227	17	fet	fet	NOUN
aiti-8098	227	18	design	design	NOUN
aiti-8098	227	19	in	in	ADP
aiti-8098	227	20	the	the	DET
aiti-8098	227	21	result	result	NOUN
aiti-8098	227	22	section	section	NOUN
aiti-8098	227	23	.	.	PUNCT
aiti-8098	228	1	fig	fig	NOUN
aiti-8098	228	2	.	.	PUNCT
aiti-8098	229	1	10	10	NUM
aiti-8098	229	2	structure	structure	NOUN
aiti-8098	229	3	of	of	ADP
aiti-8098	229	4	20	20	NUM
aiti-8098	229	5	nm	nm	PRON
aiti-8098	229	6	silicon	silicon	NOUN
aiti-8098	229	7	channel	channel	PROPN
aiti-8098	229	8	fet	fet	PROPN
aiti-8098	229	9	1.00e-07	1.00e-07	NUM
aiti-8098	229	10	1.00e-06	1.00e-06	NUM
aiti-8098	229	11	1.00e-05	1.00e-05	NUM
aiti-8098	229	12	1.00e-04	1.00e-04	NUM
aiti-8098	229	13	1.00e-03	1.00e-03	NUM
aiti-8098	229	14	1.00e-02	1.00e-02	NUM
aiti-8098	229	15	1.00e-01	1.00e-01	NUM
aiti-8098	229	16	1.00e+00	1.00e+00	NUM
aiti-8098	229	17	0.00	0.00	NUM
aiti-8098	229	18	0.08	0.08	NUM
aiti-8098	229	19	0.16	0.16	NUM
aiti-8098	229	20	0.24	0.24	NUM
aiti-8098	229	21	0.32	0.32	NUM
aiti-8098	229	22	0.40	0.40	NUM
aiti-8098	229	23	0.48	0.48	NUM
aiti-8098	229	24	0.56	0.56	NUM
aiti-8098	229	25	0.64	0.64	NUM
aiti-8098	229	26	0.72	0.72	NUM
aiti-8098	229	27	0.80	0.80	NUM
aiti-8098	229	28	d	d	NOUN
aiti-8098	229	29	ra	ra	PROPN
aiti-8098	229	30	in	in	ADP
aiti-8098	229	31	c	c	PROPN
aiti-8098	229	32	u	u	PROPN
aiti-8098	229	33	rr	rr	PROPN
aiti-8098	229	34	en	en	PROPN
aiti-8098	229	35	t	t	PROPN
aiti-8098	229	36	(	(	PUNCT
aiti-8098	229	37	a	a	DET
aiti-8098	229	38	/µ	/µ	ADJ
aiti-8098	229	39	m	m	NOUN
aiti-8098	229	40	)	)	PUNCT
aiti-8098	229	41	gate	gate	NOUN
aiti-8098	229	42	voltage	voltage	NOUN
aiti-8098	229	43	(	(	PUNCT
aiti-8098	229	44	v	v	NOUN
aiti-8098	229	45	)	)	PUNCT
aiti-8098	229	46	-1.00e-03	-1.00e-03	PUNCT
aiti-8098	230	1	0.00e+00	0.00e+00	NOUN
aiti-8098	230	2	1.00e-03	1.00e-03	NUM
aiti-8098	230	3	2.00e-03	2.00e-03	NUM
aiti-8098	230	4	3.00e-03	3.00e-03	NUM
aiti-8098	230	5	4.00e-03	4.00e-03	NUM
aiti-8098	230	6	5.00e-03	5.00e-03	NUM
aiti-8098	230	7	6.00e-03	6.00e-03	NUM
aiti-8098	230	8	7.00e-03	7.00e-03	NUM
aiti-8098	230	9	0	0	NUM
aiti-8098	230	10	0	0	NUM
aiti-8098	231	1	.0	.0	NUM
aiti-8098	232	1	1	1	NUM
aiti-8098	232	2	0	0	NUM
aiti-8098	232	3	.0	.0	NUM
aiti-8098	232	4	1	1	NUM
aiti-8098	232	5	0	0	NUM
aiti-8098	232	6	.0	.0	NUM
aiti-8098	232	7	2	2	NUM
aiti-8098	232	8	0	0	NUM
aiti-8098	232	9	.0	.0	NUM
aiti-8098	232	10	4	4	NUM
aiti-8098	232	11	0	0	NUM
aiti-8098	232	12	.0	.0	NUM
aiti-8098	232	13	8	8	NUM
aiti-8098	232	14	0	0	NUM
aiti-8098	232	15	.1	.1	NUM
aiti-8098	232	16	6	6	NUM
aiti-8098	232	17	0	0	NUM
aiti-8098	232	18	.2	.2	NUM
aiti-8098	232	19	4	4	NUM
aiti-8098	232	20	0	0	NUM
aiti-8098	232	21	.3	.3	NUM
aiti-8098	232	22	2	2	NUM
aiti-8098	232	23	0	0	NUM
aiti-8098	232	24	.4	.4	NUM
aiti-8098	232	25	0	0	NUM
aiti-8098	233	1	.4	.4	NUM
aiti-8098	233	2	8	8	NUM
aiti-8098	233	3	0	0	NUM
aiti-8098	233	4	.5	.5	NUM
aiti-8098	233	5	6	6	NUM
aiti-8098	233	6	0	0	NUM
aiti-8098	233	7	.6	.6	NUM
aiti-8098	233	8	4	4	NUM
aiti-8098	233	9	0	0	NUM
aiti-8098	233	10	.7	.7	NUM
aiti-8098	233	11	2	2	NUM
aiti-8098	233	12	0	0	NUM
aiti-8098	233	13	.8	.8	NUM
aiti-8098	234	1	d	d	INTJ
aiti-8098	234	2	ra	ra	PROPN
aiti-8098	234	3	in	in	ADP
aiti-8098	234	4	c	c	PROPN
aiti-8098	234	5	u	u	PROPN
aiti-8098	234	6	rr	rr	PROPN
aiti-8098	234	7	en	en	PROPN
aiti-8098	234	8	t	t	PROPN
aiti-8098	234	9	(	(	PUNCT
aiti-8098	234	10	a	a	DET
aiti-8098	234	11	/µ	/µ	NOUN
aiti-8098	234	12	m	m	NOUN
aiti-8098	234	13	)	)	PUNCT
aiti-8098	235	1	drain	drain	NOUN
aiti-8098	235	2	voltage	voltage	NOUN
aiti-8098	235	3	(	(	PUNCT
aiti-8098	235	4	v	v	NOUN
aiti-8098	235	5	)	)	PUNCT
aiti-8098	235	6	drain	drain	NOUN
aiti-8098	235	7	current	current	ADJ
aiti-8098	235	8	(	(	PUNCT
aiti-8098	235	9	vgs1	vgs1	NOUN
aiti-8098	235	10	=	=	NOUN
aiti-8098	235	11	0.3	0.3	NUM
aiti-8098	235	12	v	v	NOUN
aiti-8098	235	13	)	)	PUNCT
aiti-8098	235	14	drain	drain	NOUN
aiti-8098	235	15	current	current	ADJ
aiti-8098	235	16	(	(	PUNCT
aiti-8098	235	17	vgs2	vgs2	ADJ
aiti-8098	235	18	=	=	PUNCT
aiti-8098	235	19	0.6	0.6	NUM
aiti-8098	235	20	v	v	NOUN
aiti-8098	235	21	)	)	PUNCT
aiti-8098	235	22	drain	drain	NOUN
aiti-8098	235	23	current	current	ADJ
aiti-8098	235	24	(	(	PUNCT
aiti-8098	235	25	vgs3	vgs3	NOUN
aiti-8098	235	26	=	=	SYM
aiti-8098	235	27	1	1	NUM
aiti-8098	235	28	v	v	NOUN
aiti-8098	235	29	)	)	PUNCT
aiti-8098	235	30	fig	fig	NOUN
aiti-8098	235	31	.	.	PUNCT
aiti-8098	236	1	9	9	NUM
aiti-8098	236	2	id	id	ADJ
aiti-8098	236	3	-	-	PUNCT
aiti-8098	236	4	vds	vds	NOUN
aiti-8098	236	5	curve	curve	NOUN
aiti-8098	236	6	for	for	ADP
aiti-8098	236	7	three	three	NUM
aiti-8098	236	8	different	different	ADJ
aiti-8098	236	9	values	value	NOUN
aiti-8098	236	10	of	of	ADP
aiti-8098	236	11	vgs	vgs	NOUN
aiti-8098	236	12	25	25	NUM
aiti-8098	236	13	advances	advance	NOUN
aiti-8098	236	14	in	in	ADP
aiti-8098	236	15	technology	technology	NOUN
aiti-8098	236	16	innovation	innovation	NOUN
aiti-8098	236	17	,	,	PUNCT
aiti-8098	236	18	vol	vol	NOUN
aiti-8098	236	19	.	.	PROPN
aiti-8098	237	1	7	7	NUM
aiti-8098	237	2	,	,	PUNCT
aiti-8098	237	3	no	no	INTJ
aiti-8098	237	4	.	.	NOUN
aiti-8098	237	5	1	1	NUM
aiti-8098	237	6	,	,	PUNCT
aiti-8098	237	7	2022	2022	NUM
aiti-8098	237	8	,	,	PUNCT
aiti-8098	237	9	pp	pp	ADJ
aiti-8098	237	10	.	.	PUNCT
aiti-8098	238	1	19	19	NUM
aiti-8098	238	2	-	-	SYM
aiti-8098	238	3	29	29	NUM
aiti-8098	238	4	6	6	NUM
aiti-8098	238	5	.	.	PUNCT
aiti-8098	238	6	results	result	NOUN
aiti-8098	238	7	and	and	CCONJ
aiti-8098	238	8	discussion	discussion	NOUN
aiti-8098	238	9	6.1	6.1	NUM
aiti-8098	238	10	.	.	PUNCT
aiti-8098	239	1	discussion	discussion	NOUN
aiti-8098	239	2	of	of	ADP
aiti-8098	239	3	100	100	NUM
aiti-8098	239	4	nm	nm	ADJ
aiti-8098	239	5	channel	channel	NOUN
aiti-8098	239	6	length	length	NOUN
aiti-8098	239	7	design	design	VERB
aiti-8098	239	8	the	the	DET
aiti-8098	239	9	simulation	simulation	NOUN
aiti-8098	239	10	of	of	ADP
aiti-8098	239	11	both	both	CCONJ
aiti-8098	239	12	the	the	DET
aiti-8098	239	13	silicon	silicon	NOUN
aiti-8098	239	14	channel	channel	NOUN
aiti-8098	239	15	and	and	CCONJ
aiti-8098	239	16	graphene	graphene	ADJ
aiti-8098	239	17	channel	channel	NOUN
aiti-8098	239	18	fets	fet	NOUN
aiti-8098	239	19	is	be	AUX
aiti-8098	239	20	carried	carry	VERB
aiti-8098	239	21	out	out	ADP
aiti-8098	239	22	.	.	PUNCT
aiti-8098	240	1	for	for	ADP
aiti-8098	240	2	the	the	DET
aiti-8098	240	3	supply	supply	NOUN
aiti-8098	240	4	voltage	voltage	NOUN
aiti-8098	240	5	of	of	ADP
aiti-8098	240	6	1	1	NUM
aiti-8098	240	7	v	v	NOUN
aiti-8098	240	8	,	,	PUNCT
aiti-8098	240	9	it	it	PRON
aiti-8098	240	10	is	be	AUX
aiti-8098	240	11	observed	observe	VERB
aiti-8098	240	12	that	that	SCONJ
aiti-8098	240	13	the	the	DET
aiti-8098	240	14	graphene	graphene	NOUN
aiti-8098	240	15	fet	fet	PROPN
aiti-8098	240	16	shows	show	VERB
aiti-8098	240	17	ss	ss	NOUN
aiti-8098	241	1	=	=	SYM
aiti-8098	241	2	68.45	68.45	NUM
aiti-8098	241	3	mv	mv	PROPN
aiti-8098	241	4	/	/	SYM
aiti-8098	241	5	dec	dec	PROPN
aiti-8098	241	6	.	.	PROPN
aiti-8098	242	1	and	and	CCONJ
aiti-8098	242	2	the	the	DET
aiti-8098	242	3	silicon	silicon	NOUN
aiti-8098	242	4	fet	fet	PROPN
aiti-8098	242	5	shows	show	VERB
aiti-8098	242	6	ss	ss	NOUN
aiti-8098	243	1	=	=	NOUN
aiti-8098	243	2	79.6	79.6	NUM
aiti-8098	243	3	mv	mv	PROPN
aiti-8098	243	4	/	/	SYM
aiti-8098	243	5	dec	dec	PROPN
aiti-8098	243	6	.	.	PUNCT
aiti-8098	244	1	the	the	DET
aiti-8098	244	2	ss	ss	PROPN
aiti-8098	244	3	of	of	ADP
aiti-8098	244	4	graphene	graphene	NOUN
aiti-8098	244	5	fet	fet	PROPN
aiti-8098	244	6	is	be	AUX
aiti-8098	244	7	close	close	ADJ
aiti-8098	244	8	to	to	ADP
aiti-8098	244	9	the	the	DET
aiti-8098	244	10	ideal	ideal	ADJ
aiti-8098	244	11	value	value	NOUN
aiti-8098	244	12	of	of	ADP
aiti-8098	244	13	60	60	NUM
aiti-8098	244	14	mv	mv	PROPN
aiti-8098	244	15	/	/	SYM
aiti-8098	244	16	dec	dec	PROPN
aiti-8098	244	17	.	.	PUNCT
aiti-8098	245	1	hence	hence	ADV
aiti-8098	245	2	,	,	PUNCT
aiti-8098	245	3	it	it	PRON
aiti-8098	245	4	is	be	AUX
aiti-8098	245	5	a	a	DET
aiti-8098	245	6	suitable	suitable	ADJ
aiti-8098	245	7	candidate	candidate	NOUN
aiti-8098	245	8	for	for	ADP
aiti-8098	245	9	low	low	ADJ
aiti-8098	245	10	-	-	PUNCT
aiti-8098	245	11	power	power	NOUN
aiti-8098	245	12	applications	application	NOUN
aiti-8098	245	13	.	.	PUNCT
aiti-8098	246	1	another	another	DET
aiti-8098	246	2	short	short	ADJ
aiti-8098	246	3	channel	channel	NOUN
aiti-8098	246	4	parameter	parameter	NOUN
aiti-8098	246	5	dibl	dibl	PROPN
aiti-8098	246	6	is	be	AUX
aiti-8098	246	7	also	also	ADV
aiti-8098	246	8	reduced	reduce	VERB
aiti-8098	246	9	to	to	ADP
aiti-8098	246	10	a	a	DET
aiti-8098	246	11	value	value	NOUN
aiti-8098	246	12	of	of	ADP
aiti-8098	246	13	202	202	NUM
aiti-8098	246	14	mv	mv	NOUN
aiti-8098	246	15	/	/	SYM
aiti-8098	246	16	v	v	NOUN
aiti-8098	246	17	in	in	ADP
aiti-8098	246	18	the	the	DET
aiti-8098	246	19	graphene	graphene	NOUN
aiti-8098	246	20	fet	fet	NOUN
aiti-8098	246	21	as	as	SCONJ
aiti-8098	246	22	compared	compare	VERB
aiti-8098	246	23	to	to	ADP
aiti-8098	246	24	279	279	NUM
aiti-8098	246	25	mv	mv	NOUN
aiti-8098	246	26	/	/	SYM
aiti-8098	246	27	v	v	NOUN
aiti-8098	246	28	in	in	ADP
aiti-8098	246	29	the	the	DET
aiti-8098	246	30	si	si	NOUN
aiti-8098	246	31	-	-	NOUN
aiti-8098	246	32	mosfet	mosfet	NOUN
aiti-8098	246	33	,	,	PUNCT
aiti-8098	246	34	which	which	PRON
aiti-8098	246	35	is	be	AUX
aiti-8098	246	36	better	well	ADJ
aiti-8098	246	37	for	for	ADP
aiti-8098	246	38	stable	stable	ADJ
aiti-8098	246	39	operation	operation	NOUN
aiti-8098	246	40	of	of	ADP
aiti-8098	246	41	the	the	DET
aiti-8098	246	42	device	device	NOUN
aiti-8098	246	43	.	.	PUNCT
aiti-8098	247	1	the	the	DET
aiti-8098	247	2	ion	ion	NOUN
aiti-8098	247	3	/	/	SYM
aiti-8098	247	4	ioff	ioff	NOUN
aiti-8098	247	5	ratio	ratio	NOUN
aiti-8098	247	6	of	of	ADP
aiti-8098	247	7	graphene	graphene	NOUN
aiti-8098	247	8	fet	fet	PROPN
aiti-8098	247	9	is	be	AUX
aiti-8098	247	10	observed	observe	VERB
aiti-8098	247	11	equal	equal	ADJ
aiti-8098	247	12	to55962	to55962	PROPN
aiti-8098	247	13	,	,	PUNCT
aiti-8098	247	14	which	which	PRON
aiti-8098	247	15	is	be	AUX
aiti-8098	247	16	still	still	ADV
aiti-8098	247	17	less	less	ADJ
aiti-8098	247	18	than	than	ADP
aiti-8098	247	19	that	that	PRON
aiti-8098	247	20	of	of	ADP
aiti-8098	247	21	silicon	silicon	NOUN
aiti-8098	247	22	mosfet	mosfet	NOUN
aiti-8098	247	23	,	,	PUNCT
aiti-8098	247	24	so	so	SCONJ
aiti-8098	247	25	it	it	PRON
aiti-8098	247	26	needs	need	VERB
aiti-8098	247	27	to	to	PART
aiti-8098	247	28	be	be	AUX
aiti-8098	247	29	improved	improve	VERB
aiti-8098	247	30	further	far	ADV
aiti-8098	247	31	.	.	PUNCT
aiti-8098	248	1	the	the	DET
aiti-8098	248	2	id(max	id(max	NOUN
aiti-8098	248	3	)	)	PUNCT
aiti-8098	248	4	of	of	ADP
aiti-8098	248	5	silicon	silicon	NOUN
aiti-8098	248	6	mosfet	mosfet	NOUN
aiti-8098	248	7	is	be	AUX
aiti-8098	248	8	more	more	ADJ
aiti-8098	248	9	than	than	ADP
aiti-8098	248	10	that	that	PRON
aiti-8098	248	11	of	of	ADP
aiti-8098	248	12	graphene	graphene	ADJ
aiti-8098	248	13	fet	fet	PROPN
aiti-8098	248	14	.	.	PUNCT
aiti-8098	248	15	table	table	NOUN
aiti-8098	248	16	2	2	NUM
aiti-8098	248	17	shows	show	VERB
aiti-8098	248	18	a	a	DET
aiti-8098	248	19	comparison	comparison	NOUN
aiti-8098	248	20	of	of	ADP
aiti-8098	248	21	all	all	DET
aiti-8098	248	22	parameters	parameter	NOUN
aiti-8098	248	23	.	.	PUNCT
aiti-8098	249	1	in	in	ADP
aiti-8098	249	2	the	the	DET
aiti-8098	249	3	graphene	graphene	NOUN
aiti-8098	249	4	fet	fet	PROPN
aiti-8098	249	5	design	design	NOUN
aiti-8098	249	6	,	,	PUNCT
aiti-8098	249	7	by	by	ADP
aiti-8098	249	8	changing	change	VERB
aiti-8098	249	9	gate	gate	NOUN
aiti-8098	249	10	dielectric	dielectric	ADJ
aiti-8098	249	11	material	material	NOUN
aiti-8098	249	12	from	from	ADP
aiti-8098	249	13	sio2	sio2	PROPN
aiti-8098	249	14	to	to	ADP
aiti-8098	249	15	hfo2	hfo2	PROPN
aiti-8098	249	16	,	,	PUNCT
aiti-8098	249	17	the	the	DET
aiti-8098	249	18	improvement	improvement	NOUN
aiti-8098	249	19	in	in	ADP
aiti-8098	249	20	parameters	parameter	NOUN
aiti-8098	249	21	is	be	AUX
aiti-8098	249	22	observed	observe	VERB
aiti-8098	249	23	.	.	PUNCT
aiti-8098	250	1	fig	fig	NOUN
aiti-8098	250	2	.	.	PUNCT
aiti-8098	251	1	11	11	NUM
aiti-8098	251	2	shows	show	VERB
aiti-8098	251	3	overlay	overlay	NOUN
aiti-8098	251	4	characteristics	characteristic	NOUN
aiti-8098	251	5	of	of	ADP
aiti-8098	251	6	both	both	DET
aiti-8098	251	7	fets	fet	NOUN
aiti-8098	251	8	.	.	PUNCT
aiti-8098	252	1	from	from	ADP
aiti-8098	252	2	the	the	DET
aiti-8098	252	3	characteristics	characteristic	NOUN
aiti-8098	252	4	,	,	PUNCT
aiti-8098	252	5	it	it	PRON
aiti-8098	252	6	is	be	AUX
aiti-8098	252	7	observed	observe	VERB
aiti-8098	252	8	that	that	SCONJ
aiti-8098	252	9	the	the	DET
aiti-8098	252	10	si	si	NOUN
aiti-8098	252	11	-	-	PUNCT
aiti-8098	252	12	mosfet	mosfet	NOUN
aiti-8098	252	13	offers	offer	VERB
aiti-8098	252	14	more	more	ADJ
aiti-8098	252	15	current	current	ADJ
aiti-8098	252	16	for	for	ADP
aiti-8098	252	17	different	different	ADJ
aiti-8098	252	18	gate	gate	NOUN
aiti-8098	252	19	voltages	voltage	NOUN
aiti-8098	252	20	;	;	PUNCT
aiti-8098	252	21	hence	hence	ADV
aiti-8098	252	22	,	,	PUNCT
aiti-8098	252	23	further	far	ADV
aiti-8098	252	24	scaling	scaling	NOUN
aiti-8098	252	25	of	of	ADP
aiti-8098	252	26	these	these	DET
aiti-8098	252	27	two	two	NUM
aiti-8098	252	28	devices	device	NOUN
aiti-8098	252	29	is	be	AUX
aiti-8098	252	30	carried	carry	VERB
aiti-8098	252	31	out	out	ADP
aiti-8098	252	32	and	and	CCONJ
aiti-8098	252	33	a	a	DET
aiti-8098	252	34	20	20	NUM
aiti-8098	252	35	nm	nm	NOUN
aiti-8098	252	36	fet	fet	NOUN
aiti-8098	252	37	is	be	AUX
aiti-8098	252	38	designed	design	VERB
aiti-8098	252	39	to	to	PART
aiti-8098	252	40	observe	observe	VERB
aiti-8098	252	41	and	and	CCONJ
aiti-8098	252	42	improve	improve	VERB
aiti-8098	252	43	short	short	ADJ
aiti-8098	252	44	channel	channel	NOUN
aiti-8098	252	45	effects	effect	NOUN
aiti-8098	252	46	.	.	PUNCT
aiti-8098	253	1	from	from	ADP
aiti-8098	253	2	table	table	NOUN
aiti-8098	253	3	2	2	NUM
aiti-8098	253	4	,	,	PUNCT
aiti-8098	253	5	it	it	PRON
aiti-8098	253	6	is	be	AUX
aiti-8098	253	7	observed	observe	VERB
aiti-8098	253	8	that	that	SCONJ
aiti-8098	253	9	graphene	graphene	NOUN
aiti-8098	253	10	material	material	NOUN
aiti-8098	253	11	can	can	AUX
aiti-8098	253	12	be	be	AUX
aiti-8098	253	13	used	use	VERB
aiti-8098	253	14	as	as	ADP
aiti-8098	253	15	a	a	DET
aiti-8098	253	16	channel	channel	NOUN
aiti-8098	253	17	material	material	NOUN
aiti-8098	253	18	to	to	PART
aiti-8098	253	19	replace	replace	VERB
aiti-8098	253	20	silicon	silicon	NOUN
aiti-8098	253	21	because	because	SCONJ
aiti-8098	253	22	the	the	DET
aiti-8098	253	23	behavior	behavior	NOUN
aiti-8098	253	24	of	of	ADP
aiti-8098	253	25	the	the	DET
aiti-8098	253	26	graphene	graphene	NOUN
aiti-8098	253	27	fet	fet	NOUN
aiti-8098	253	28	is	be	AUX
aiti-8098	253	29	found	find	VERB
aiti-8098	253	30	to	to	PART
aiti-8098	253	31	be	be	AUX
aiti-8098	253	32	identical	identical	ADJ
aiti-8098	253	33	to	to	ADP
aiti-8098	253	34	conventional	conventional	ADJ
aiti-8098	253	35	mosfets	mosfet	NOUN
aiti-8098	253	36	.	.	PUNCT
aiti-8098	254	1	the	the	DET
aiti-8098	254	2	i	i	PROPN
aiti-8098	254	3	d	d	PROPN
aiti-8098	254	4	of	of	ADP
aiti-8098	254	5	silicon	silicon	PROPN
aiti-8098	254	6	fet	fet	PROPN
aiti-8098	254	7	is	be	AUX
aiti-8098	254	8	more	more	ADJ
aiti-8098	254	9	than	than	ADP
aiti-8098	254	10	that	that	PRON
aiti-8098	254	11	of	of	ADP
aiti-8098	254	12	graphene	graphene	ADJ
aiti-8098	254	13	fet	fet	NOUN
aiti-8098	254	14	due	due	ADP
aiti-8098	254	15	to	to	ADP
aiti-8098	254	16	the	the	DET
aiti-8098	254	17	large	large	ADJ
aiti-8098	254	18	channel	channel	NOUN
aiti-8098	254	19	length	length	NOUN
aiti-8098	254	20	and	and	CCONJ
aiti-8098	254	21	sufficient	sufficient	ADJ
aiti-8098	254	22	bandgap	bandgap	NOUN
aiti-8098	254	23	of	of	ADP
aiti-8098	254	24	silicon	silicon	NOUN
aiti-8098	254	25	material	material	NOUN
aiti-8098	254	26	.	.	PUNCT
aiti-8098	255	1	the	the	DET
aiti-8098	255	2	ss	ss	NOUN
aiti-8098	255	3	in	in	ADP
aiti-8098	255	4	graphene	graphene	ADJ
aiti-8098	255	5	fet	fet	PROPN
aiti-8098	255	6	for	for	ADP
aiti-8098	255	7	hfo2	hfo2	NOUN
aiti-8098	255	8	dielectric	dielectric	ADJ
aiti-8098	255	9	material	material	NOUN
aiti-8098	255	10	is	be	AUX
aiti-8098	255	11	observed	observe	VERB
aiti-8098	255	12	to	to	PART
aiti-8098	255	13	be	be	AUX
aiti-8098	255	14	68.45	68.45	NUM
aiti-8098	255	15	mv	mv	NOUN
aiti-8098	255	16	/	/	SYM
aiti-8098	255	17	decade	decade	NOUN
aiti-8098	255	18	.	.	PUNCT
aiti-8098	256	1	it	it	PRON
aiti-8098	256	2	is	be	AUX
aiti-8098	256	3	due	due	ADJ
aiti-8098	256	4	to	to	ADP
aiti-8098	256	5	an	an	DET
aiti-8098	256	6	increase	increase	NOUN
aiti-8098	256	7	in	in	ADP
aiti-8098	256	8	cox	cox	PROPN
aiti-8098	256	9	,	,	PUNCT
aiti-8098	256	10	which	which	PRON
aiti-8098	256	11	depends	depend	VERB
aiti-8098	256	12	on	on	ADP
aiti-8098	256	13	dielectric	dielectric	ADJ
aiti-8098	256	14	material	material	NOUN
aiti-8098	256	15	and	and	CCONJ
aiti-8098	256	16	oxide	oxide	NOUN
aiti-8098	256	17	thickness	thickness	NOUN
aiti-8098	256	18	(	(	PUNCT
aiti-8098	256	19	tox	tox	NOUN
aiti-8098	256	20	)	)	PUNCT
aiti-8098	256	21	.	.	PUNCT
aiti-8098	257	1	as	as	SCONJ
aiti-8098	257	2	the	the	DET
aiti-8098	257	3	dielectric	dielectric	ADJ
aiti-8098	257	4	constant	constant	ADJ
aiti-8098	257	5	of	of	ADP
aiti-8098	257	6	hfo2	hfo2	NOUN
aiti-8098	257	7	is	be	AUX
aiti-8098	257	8	high	high	ADJ
aiti-8098	257	9	and	and	CCONJ
aiti-8098	257	10	tox	tox	NOUN
aiti-8098	257	11	is	be	AUX
aiti-8098	257	12	only	only	ADV
aiti-8098	257	13	2.5	2.5	NUM
aiti-8098	257	14	nm	nm	NOUN
aiti-8098	257	15	which	which	PRON
aiti-8098	257	16	is	be	AUX
aiti-8098	257	17	low	low	ADJ
aiti-8098	257	18	,	,	PUNCT
aiti-8098	257	19	the	the	DET
aiti-8098	257	20	cox	cox	PROPN
aiti-8098	257	21	value	value	NOUN
aiti-8098	257	22	increases	increase	NOUN
aiti-8098	257	23	.	.	PUNCT
aiti-8098	258	1	as	as	ADP
aiti-8098	258	2	per	per	ADP
aiti-8098	258	3	eq	eq	NOUN
aiti-8098	258	4	.	.	PUNCT
aiti-8098	259	1	(	(	PUNCT
aiti-8098	259	2	2	2	NUM
aiti-8098	259	3	)	)	PUNCT
aiti-8098	259	4	,	,	PUNCT
aiti-8098	259	5	ss	ss	PROPN
aiti-8098	259	6	depends	depend	VERB
aiti-8098	259	7	on	on	ADP
aiti-8098	259	8	cox	cox	PROPN
aiti-8098	259	9	.	.	PUNCT
aiti-8098	260	1	the	the	DET
aiti-8098	260	2	ss	ss	PROPN
aiti-8098	260	3	decreases	decrease	NOUN
aiti-8098	260	4	due	due	ADJ
aiti-8098	260	5	to	to	ADP
aiti-8098	260	6	an	an	DET
aiti-8098	260	7	increase	increase	NOUN
aiti-8098	260	8	in	in	ADP
aiti-8098	260	9	the	the	DET
aiti-8098	260	10	cox	cox	PROPN
aiti-8098	260	11	value	value	NOUN
aiti-8098	260	12	.	.	PUNCT
aiti-8098	261	1	this	this	DET
aiti-8098	261	2	decrease	decrease	NOUN
aiti-8098	261	3	in	in	ADP
aiti-8098	261	4	ss	ss	PROPN
aiti-8098	261	5	is	be	AUX
aiti-8098	261	6	close	close	ADJ
aiti-8098	261	7	to	to	ADP
aiti-8098	261	8	the	the	DET
aiti-8098	261	9	ideal	ideal	ADJ
aiti-8098	261	10	value	value	NOUN
aiti-8098	261	11	of	of	ADP
aiti-8098	261	12	ss	ss	PROPN
aiti-8098	261	13	.	.	PUNCT
aiti-8098	262	1	the	the	DET
aiti-8098	262	2	ion	ion	NOUN
aiti-8098	262	3	/	/	SYM
aiti-8098	262	4	ioff	ioff	NOUN
aiti-8098	262	5	ratio	ratio	NOUN
aiti-8098	262	6	is	be	AUX
aiti-8098	262	7	still	still	ADV
aiti-8098	262	8	more	more	ADJ
aiti-8098	262	9	in	in	ADP
aiti-8098	262	10	the	the	DET
aiti-8098	262	11	silicon	silicon	NOUN
aiti-8098	262	12	fet	fet	NOUN
aiti-8098	262	13	due	due	ADP
aiti-8098	262	14	to	to	ADP
aiti-8098	262	15	the	the	DET
aiti-8098	262	16	high	high	ADJ
aiti-8098	262	17	ion	ion	NOUN
aiti-8098	262	18	caused	cause	VERB
aiti-8098	262	19	by	by	ADP
aiti-8098	262	20	the	the	DET
aiti-8098	262	21	sufficient	sufficient	ADJ
aiti-8098	262	22	bandgap	bandgap	NOUN
aiti-8098	262	23	available	available	ADJ
aiti-8098	262	24	in	in	ADP
aiti-8098	262	25	silicon	silicon	NOUN
aiti-8098	262	26	material	material	NOUN
aiti-8098	262	27	.	.	PUNCT
aiti-8098	263	1	the	the	DET
aiti-8098	263	2	dibl	dibl	PROPN
aiti-8098	263	3	is	be	AUX
aiti-8098	263	4	reduced	reduce	VERB
aiti-8098	263	5	in	in	ADP
aiti-8098	263	6	the	the	DET
aiti-8098	263	7	graphene	graphene	NOUN
aiti-8098	263	8	fet	fet	NOUN
aiti-8098	263	9	due	due	ADP
aiti-8098	263	10	to	to	ADP
aiti-8098	263	11	more	more	ADJ
aiti-8098	263	12	control	control	NOUN
aiti-8098	263	13	of	of	ADP
aiti-8098	263	14	gate	gate	ADJ
aiti-8098	263	15	voltage	voltage	NOUN
aiti-8098	263	16	on	on	ADP
aiti-8098	263	17	channel	channel	NOUN
aiti-8098	263	18	carriers	carrier	NOUN
aiti-8098	263	19	because	because	SCONJ
aiti-8098	263	20	of	of	ADP
aiti-8098	263	21	better	well	ADJ
aiti-8098	263	22	conductivity	conductivity	NOUN
aiti-8098	263	23	of	of	ADP
aiti-8098	263	24	graphene	graphene	NOUN
aiti-8098	263	25	material	material	NOUN
aiti-8098	263	26	and	and	CCONJ
aiti-8098	263	27	high	high	ADJ
aiti-8098	263	28	-	-	PUNCT
aiti-8098	263	29	k	k	NOUN
aiti-8098	263	30	gate	gate	PROPN
aiti-8098	263	31	dielectric	dielectric	ADJ
aiti-8098	263	32	material	material	NOUN
aiti-8098	263	33	.	.	PUNCT
aiti-8098	264	1	fig	fig	NOUN
aiti-8098	264	2	.	.	PUNCT
aiti-8098	265	1	11	11	NUM
aiti-8098	265	2	overlay	overlay	NOUN
aiti-8098	265	3	characteristics	characteristic	NOUN
aiti-8098	265	4	of	of	ADP
aiti-8098	265	5	100	100	NUM
aiti-8098	265	6	nm	nm	ADJ
aiti-8098	265	7	si	si	NOUN
aiti-8098	265	8	-	-	ADJ
aiti-8098	265	9	mosfet	mosfet	NOUN
aiti-8098	265	10	and	and	CCONJ
aiti-8098	265	11	graphene	graphene	VERB
aiti-8098	265	12	fet	fet	PROPN
aiti-8098	265	13	table	table	NOUN
aiti-8098	265	14	2	2	NUM
aiti-8098	265	15	comparison	comparison	NOUN
aiti-8098	265	16	of	of	ADP
aiti-8098	265	17	silicon	silicon	NOUN
aiti-8098	265	18	and	and	CCONJ
aiti-8098	265	19	graphene	graphene	ADJ
aiti-8098	265	20	channel	channel	NOUN
aiti-8098	265	21	mosfets	mosfet	NOUN
aiti-8098	265	22	at	at	ADP
aiti-8098	265	23	100	100	NUM
aiti-8098	265	24	nm	nm	NOUN
aiti-8098	265	25	gate	gate	NOUN
aiti-8098	265	26	length	length	NOUN
aiti-8098	265	27	device	device	NOUN
aiti-8098	265	28	/	/	SYM
aiti-8098	265	29	parameter	parameter	NOUN
aiti-8098	265	30	si	si	NOUN
aiti-8098	265	31	-	-	ADJ
aiti-8098	265	32	mosfet	mosfet	ADJ
aiti-8098	265	33	graphene	graphene	NOUN
aiti-8098	265	34	fet	fet	PROPN
aiti-8098	265	35	(	(	PUNCT
aiti-8098	265	36	with	with	ADP
aiti-8098	265	37	sio2	sio2	PROPN
aiti-8098	265	38	)	)	PUNCT
aiti-8098	265	39	graphene	graphene	NOUN
aiti-8098	265	40	fet	fet	PROPN
aiti-8098	265	41	(	(	PUNCT
aiti-8098	265	42	with	with	ADP
aiti-8098	265	43	hfo2	hfo2	NOUN
aiti-8098	265	44	)	)	PUNCT
aiti-8098	265	45	channel	channel	NOUN
aiti-8098	265	46	length	length	NOUN
aiti-8098	265	47	(	(	PUNCT
aiti-8098	265	48	nm	nm	NOUN
aiti-8098	265	49	)	)	PUNCT
aiti-8098	265	50	100	100	NUM
aiti-8098	265	51	100	100	NUM
aiti-8098	265	52	100	100	NUM
aiti-8098	265	53	vdd(max	vdd(max	NOUN
aiti-8098	265	54	)	)	PUNCT
aiti-8098	265	55	(	(	PUNCT
aiti-8098	265	56	v	v	NOUN
aiti-8098	265	57	)	)	PUNCT
aiti-8098	265	58	1	1	NUM
aiti-8098	265	59	1	1	NUM
aiti-8098	265	60	1	1	NUM
aiti-8098	265	61	electron	electron	NOUN
aiti-8098	265	62	mobility	mobility	NOUN
aiti-8098	265	63	(	(	PUNCT
aiti-8098	265	64	cm2	cm2	NOUN
aiti-8098	265	65	/	/	SYM
aiti-8098	265	66	v.s	v.s	NOUN
aiti-8098	265	67	)	)	PUNCT
aiti-8098	265	68	1000	1000	NUM
aiti-8098	265	69	30000	30000	NUM
aiti-8098	265	70	30000	30000	NUM
aiti-8098	265	71	hole	hole	NOUN
aiti-8098	265	72	mobility	mobility	NOUN
aiti-8098	265	73	(	(	PUNCT
aiti-8098	265	74	cm2	cm2	NOUN
aiti-8098	265	75	/	/	SYM
aiti-8098	265	76	v.s	v.s	PROPN
aiti-8098	265	77	)	)	PUNCT
aiti-8098	265	78	500	500	NUM
aiti-8098	265	79	30000	30000	NUM
aiti-8098	265	80	30000	30000	NUM
aiti-8098	265	81	bandgap	bandgap	NOUN
aiti-8098	265	82	(	(	PUNCT
aiti-8098	265	83	ev	ev	PROPN
aiti-8098	265	84	)	)	PUNCT
aiti-8098	265	85	1.08	1.08	NUM
aiti-8098	265	86	0.7	0.7	NUM
aiti-8098	265	87	0.7	0.7	NUM
aiti-8098	265	88	channel	channel	NOUN
aiti-8098	265	89	material	material	NOUN
aiti-8098	265	90	silicon	silicon	NOUN
aiti-8098	265	91	graphene	graphene	NOUN
aiti-8098	265	92	graphene	graphene	NOUN
aiti-8098	265	93	gate	gate	NOUN
aiti-8098	265	94	dielectric	dielectric	PROPN
aiti-8098	265	95	material	material	PROPN
aiti-8098	265	96	sio2	sio2	PROPN
aiti-8098	265	97	sio2	sio2	PROPN
aiti-8098	265	98	hfo2	hfo2	PROPN
aiti-8098	265	99	vth	vth	NOUN
aiti-8098	265	100	(	(	PUNCT
aiti-8098	265	101	v	v	NOUN
aiti-8098	265	102	)	)	PUNCT
aiti-8098	265	103	0.303	0.303	NUM
aiti-8098	265	104	0.322	0.322	NUM
aiti-8098	265	105	0.357	0.357	NUM
aiti-8098	265	106	subthreshold	subthreshold	ADJ
aiti-8098	265	107	swing	swing	NOUN
aiti-8098	265	108	(	(	PUNCT
aiti-8098	265	109	mv	mv	PROPN
aiti-8098	265	110	/	/	SYM
aiti-8098	265	111	dec	dec	PROPN
aiti-8098	265	112	)	)	PUNCT
aiti-8098	265	113	79.6	79.6	NUM
aiti-8098	265	114	93.0	93.0	NUM
aiti-8098	265	115	68.45	68.45	NUM
aiti-8098	265	116	id(max	id(max	X
aiti-8098	265	117	)	)	PUNCT
aiti-8098	265	118	(	(	PUNCT
aiti-8098	265	119	a/µm	a/µm	NOUN
aiti-8098	265	120	)	)	PUNCT
aiti-8098	266	1	0.000122	0.000122	NUM
aiti-8098	266	2	2.18e-08	2.18e-08	NUM
aiti-8098	266	3	1.69e-6	1.69e-6	NOUN
aiti-8098	266	4	ion	ion	NOUN
aiti-8098	266	5	/	/	SYM
aiti-8098	266	6	ioff	ioff	NOUN
aiti-8098	266	7	1.73e10	1.73e10	NUM
aiti-8098	266	8	984.21	984.21	NUM
aiti-8098	266	9	55962.56	55962.56	NUM
aiti-8098	266	10	dibl	dibl	NOUN
aiti-8098	266	11	(	(	PUNCT
aiti-8098	266	12	mv	mv	PROPN
aiti-8098	266	13	/	/	SYM
aiti-8098	266	14	v	v	NOUN
aiti-8098	266	15	)	)	PUNCT
aiti-8098	266	16	279	279	NUM
aiti-8098	266	17	202	202	NUM
aiti-8098	267	1	202	202	NUM
aiti-8098	267	2	1.00e-24	1.00e-24	NUM
aiti-8098	267	3	1.00e-21	1.00e-21	NUM
aiti-8098	267	4	1.00e-18	1.00e-18	NUM
aiti-8098	267	5	1.00e-15	1.00e-15	NUM
aiti-8098	267	6	1.00e-12	1.00e-12	NUM
aiti-8098	267	7	1.00e-09	1.00e-09	NUM
aiti-8098	267	8	1.00e-06	1.00e-06	NUM
aiti-8098	267	9	1.00e-03	1.00e-03	NUM
aiti-8098	267	10	1.00e+00	1.00e+00	NUM
aiti-8098	267	11	d	d	X
aiti-8098	267	12	ra	ra	PROPN
aiti-8098	267	13	in	in	ADP
aiti-8098	267	14	c	c	PROPN
aiti-8098	267	15	u	u	PROPN
aiti-8098	267	16	rr	rr	PROPN
aiti-8098	267	17	en	en	PROPN
aiti-8098	267	18	t	t	PROPN
aiti-8098	267	19	(	(	PUNCT
aiti-8098	267	20	a	a	DET
aiti-8098	267	21	/µ	/µ	NOUN
aiti-8098	267	22	m	m	NOUN
aiti-8098	267	23	)	)	PUNCT
aiti-8098	267	24	drain	drain	NOUN
aiti-8098	267	25	voltage	voltage	NOUN
aiti-8098	267	26	(	(	PUNCT
aiti-8098	267	27	v	v	NOUN
aiti-8098	267	28	)	)	PUNCT
aiti-8098	267	29	si_100	si_100	VERB
aiti-8098	267	30	nm	nm	DET
aiti-8098	267	31	vgs1	vgs1	NOUN
aiti-8098	267	32	=	=	NOUN
aiti-8098	267	33	0.3	0.3	NUM
aiti-8098	267	34	v	v	NOUN
aiti-8098	267	35	si_100	si_100	NOUN
aiti-8098	267	36	nm	nm	ADV
aiti-8098	267	37	vgs2	vgs2	ADV
aiti-8098	268	1	=	=	PUNCT
aiti-8098	268	2	0.6	0.6	NUM
aiti-8098	268	3	v	v	NOUN
aiti-8098	268	4	si_100	si_100	NOUN
aiti-8098	268	5	nm	nm	DET
aiti-8098	268	6	vgs3	vgs3	NOUN
aiti-8098	268	7	=	=	NOUN
aiti-8098	268	8	1	1	NUM
aiti-8098	268	9	v	v	NOUN
aiti-8098	268	10	gr_100	gr_100	NOUN
aiti-8098	268	11	nm	nm	DET
aiti-8098	268	12	vgs1	vgs1	NOUN
aiti-8098	268	13	=	=	PUNCT
aiti-8098	268	14	0.3	0.3	NUM
aiti-8098	268	15	v	v	NOUN
aiti-8098	268	16	gr_100	gr_100	NOUN
aiti-8098	268	17	nm	nm	ADJ
aiti-8098	268	18	vgs2	vgs2	ADV
aiti-8098	268	19	=	=	PUNCT
aiti-8098	268	20	0.6	0.6	NUM
aiti-8098	268	21	v	v	NOUN
aiti-8098	268	22	gr_100	gr_100	NOUN
aiti-8098	268	23	nm	nm	DET
aiti-8098	268	24	vgs3	vgs3	NOUN
aiti-8098	268	25	=	=	NOUN
aiti-8098	268	26	1	1	NUM
aiti-8098	268	27	v	v	NUM
aiti-8098	268	28	26	26	NUM
aiti-8098	268	29	advances	advance	NOUN
aiti-8098	268	30	in	in	ADP
aiti-8098	268	31	technology	technology	NOUN
aiti-8098	268	32	innovation	innovation	NOUN
aiti-8098	268	33	,	,	PUNCT
aiti-8098	268	34	vol	vol	NOUN
aiti-8098	268	35	.	.	PROPN
aiti-8098	269	1	7	7	NUM
aiti-8098	269	2	,	,	PUNCT
aiti-8098	269	3	no	no	INTJ
aiti-8098	269	4	.	.	NOUN
aiti-8098	269	5	1	1	NUM
aiti-8098	269	6	,	,	PUNCT
aiti-8098	269	7	2022	2022	NUM
aiti-8098	269	8	,	,	PUNCT
aiti-8098	269	9	pp	pp	ADJ
aiti-8098	269	10	.	.	PUNCT
aiti-8098	270	1	19	19	NUM
aiti-8098	270	2	-	-	SYM
aiti-8098	270	3	29	29	NUM
aiti-8098	270	4	6.2	6.2	NUM
aiti-8098	270	5	.	.	PUNCT
aiti-8098	271	1	discussion	discussion	NOUN
aiti-8098	271	2	of	of	ADP
aiti-8098	271	3	20	20	NUM
aiti-8098	271	4	nm	nm	ADJ
aiti-8098	271	5	channel	channel	NOUN
aiti-8098	271	6	length	length	NOUN
aiti-8098	271	7	design	design	NOUN
aiti-8098	271	8	the	the	DET
aiti-8098	271	9	implemented	implement	VERB
aiti-8098	271	10	graphene	graphene	NOUN
aiti-8098	271	11	channel	channel	NOUN
aiti-8098	271	12	fet	fet	PROPN
aiti-8098	271	13	and	and	CCONJ
aiti-8098	271	14	silicon	silicon	PROPN
aiti-8098	271	15	channel	channel	PROPN
aiti-8098	271	16	fet	fet	PROPN
aiti-8098	271	17	at	at	ADP
aiti-8098	271	18	20	20	NUM
aiti-8098	271	19	nm	nm	ADJ
aiti-8098	271	20	channel	channel	NOUN
aiti-8098	271	21	length	length	NOUN
aiti-8098	271	22	are	be	AUX
aiti-8098	271	23	compared	compare	VERB
aiti-8098	271	24	as	as	SCONJ
aiti-8098	271	25	shown	show	VERB
aiti-8098	271	26	in	in	ADP
aiti-8098	271	27	table	table	NOUN
aiti-8098	271	28	3	3	NUM
aiti-8098	271	29	.	.	PUNCT
aiti-8098	272	1	it	it	PRON
aiti-8098	272	2	is	be	AUX
aiti-8098	272	3	observed	observe	VERB
aiti-8098	272	4	that	that	SCONJ
aiti-8098	272	5	the	the	DET
aiti-8098	272	6	graphene	graphene	NOUN
aiti-8098	272	7	fet	fet	NOUN
aiti-8098	272	8	offers	offer	VERB
aiti-8098	272	9	vth	vth	NOUN
aiti-8098	272	10	=	=	NUM
aiti-8098	272	11	0.040	0.040	NUM
aiti-8098	272	12	v	v	NOUN
aiti-8098	272	13	,	,	PUNCT
aiti-8098	272	14	and	and	CCONJ
aiti-8098	272	15	silicon	silicon	NOUN
aiti-8098	272	16	mosfet	mosfet	NOUN
aiti-8098	272	17	offers	offer	VERB
aiti-8098	272	18	vth	vth	NOUN
aiti-8098	272	19	=	=	PUNCT
aiti-8098	272	20	0.021	0.021	NUM
aiti-8098	272	21	v.	v.	ADP
aiti-8098	272	22	the	the	DET
aiti-8098	272	23	observed	observed	ADJ
aiti-8098	272	24	ss	ss	NOUN
aiti-8098	272	25	is	be	AUX
aiti-8098	272	26	114	114	NUM
aiti-8098	272	27	mv	mv	NOUN
aiti-8098	272	28	/	/	SYM
aiti-8098	272	29	dec	dec	PROPN
aiti-8098	272	30	in	in	ADP
aiti-8098	272	31	the	the	DET
aiti-8098	272	32	graphene	graphene	NOUN
aiti-8098	272	33	fet	fet	NOUN
aiti-8098	272	34	and	and	CCONJ
aiti-8098	272	35	115	115	NUM
aiti-8098	272	36	mv	mv	PROPN
aiti-8098	272	37	/	/	SYM
aiti-8098	272	38	dec	dec	PROPN
aiti-8098	272	39	in	in	ADP
aiti-8098	272	40	the	the	DET
aiti-8098	272	41	silicon	silicon	NOUN
aiti-8098	272	42	mosfet	mosfet	NOUN
aiti-8098	272	43	.	.	PUNCT
aiti-8098	273	1	these	these	DET
aiti-8098	273	2	values	value	NOUN
aiti-8098	273	3	need	need	VERB
aiti-8098	273	4	further	further	ADJ
aiti-8098	273	5	improvement	improvement	NOUN
aiti-8098	273	6	.	.	PUNCT
aiti-8098	274	1	the	the	DET
aiti-8098	274	2	i	i	PROPN
aiti-8098	274	3	d	d	PROPN
aiti-8098	274	4	value	value	NOUN
aiti-8098	274	5	is	be	AUX
aiti-8098	274	6	more	more	ADJ
aiti-8098	274	7	in	in	ADP
aiti-8098	274	8	the	the	DET
aiti-8098	274	9	graphene	graphene	NOUN
aiti-8098	274	10	fet	fet	NOUN
aiti-8098	274	11	for	for	ADP
aiti-8098	274	12	vds	vds	PROPN
aiti-8098	274	13	=	=	PROPN
aiti-8098	274	14	0.8	0.8	NUM
aiti-8098	274	15	v	v	NOUN
aiti-8098	274	16	,	,	PUNCT
aiti-8098	274	17	as	as	SCONJ
aiti-8098	274	18	compared	compare	VERB
aiti-8098	274	19	to	to	ADP
aiti-8098	274	20	the	the	DET
aiti-8098	274	21	silicon	silicon	NOUN
aiti-8098	274	22	mosfet	mosfet	NOUN
aiti-8098	274	23	.	.	PUNCT
aiti-8098	275	1	the	the	DET
aiti-8098	275	2	observed	observe	VERB
aiti-8098	275	3	ion	ion	NOUN
aiti-8098	275	4	/	/	SYM
aiti-8098	275	5	ioff	ioff	NOUN
aiti-8098	275	6	ratio	ratio	NOUN
aiti-8098	275	7	is	be	AUX
aiti-8098	275	8	14379	14379	NUM
aiti-8098	275	9	,	,	PUNCT
aiti-8098	275	10	which	which	PRON
aiti-8098	275	11	shows	show	VERB
aiti-8098	275	12	the	the	DET
aiti-8098	275	13	improvement	improvement	NOUN
aiti-8098	275	14	in	in	ADP
aiti-8098	275	15	the	the	DET
aiti-8098	275	16	graphene	graphene	NOUN
aiti-8098	275	17	fet	fet	NOUN
aiti-8098	275	18	,	,	PUNCT
aiti-8098	275	19	so	so	SCONJ
aiti-8098	275	20	it	it	PRON
aiti-8098	275	21	is	be	AUX
aiti-8098	275	22	suitable	suitable	ADJ
aiti-8098	275	23	for	for	ADP
aiti-8098	275	24	low	low	ADJ
aiti-8098	275	25	power	power	NOUN
aiti-8098	275	26	applications	application	NOUN
aiti-8098	275	27	.	.	PUNCT
aiti-8098	276	1	the	the	DET
aiti-8098	276	2	observed	observe	VERB
aiti-8098	276	3	dibl	dibl	NOUN
aiti-8098	276	4	in	in	ADP
aiti-8098	276	5	the	the	DET
aiti-8098	276	6	graphene	graphene	NOUN
aiti-8098	276	7	fet	fet	NOUN
aiti-8098	276	8	is	be	AUX
aiti-8098	276	9	123	123	NUM
aiti-8098	276	10	mv	mv	PROPN
aiti-8098	276	11	/	/	SYM
aiti-8098	276	12	v	v	NOUN
aiti-8098	276	13	,	,	PUNCT
aiti-8098	276	14	which	which	PRON
aiti-8098	276	15	is	be	AUX
aiti-8098	276	16	less	less	ADJ
aiti-8098	276	17	than	than	ADP
aiti-8098	276	18	that	that	PRON
aiti-8098	276	19	of	of	ADP
aiti-8098	276	20	the	the	DET
aiti-8098	276	21	silicon	silicon	NOUN
aiti-8098	276	22	channel	channel	PROPN
aiti-8098	276	23	mosfet	mosfet	NOUN
aiti-8098	276	24	.	.	PUNCT
aiti-8098	277	1	the	the	DET
aiti-8098	277	2	current	current	ADJ
aiti-8098	277	3	work	work	NOUN
aiti-8098	277	4	is	be	AUX
aiti-8098	277	5	also	also	ADV
aiti-8098	277	6	compared	compare	VERB
aiti-8098	277	7	with	with	ADP
aiti-8098	277	8	the	the	DET
aiti-8098	277	9	already	already	ADV
aiti-8098	277	10	published	publish	VERB
aiti-8098	277	11	work	work	NOUN
aiti-8098	277	12	,	,	PUNCT
aiti-8098	277	13	and	and	CCONJ
aiti-8098	277	14	it	it	PRON
aiti-8098	277	15	can	can	AUX
aiti-8098	277	16	be	be	AUX
aiti-8098	277	17	seen	see	VERB
aiti-8098	277	18	that	that	SCONJ
aiti-8098	277	19	the	the	DET
aiti-8098	277	20	graphene	graphene	NOUN
aiti-8098	277	21	fet	fet	PROPN
aiti-8098	277	22	shows	show	VERB
aiti-8098	277	23	the	the	DET
aiti-8098	277	24	improvement	improvement	NOUN
aiti-8098	277	25	in	in	ADP
aiti-8098	277	26	id(max	id(max	NOUN
aiti-8098	277	27	)	)	PUNCT
aiti-8098	277	28	due	due	ADP
aiti-8098	277	29	to	to	ADP
aiti-8098	277	30	the	the	DET
aiti-8098	277	31	high	high	ADJ
aiti-8098	277	32	mobility	mobility	NOUN
aiti-8098	277	33	of	of	ADP
aiti-8098	277	34	graphene	graphene	ADJ
aiti-8098	277	35	material	material	NOUN
aiti-8098	277	36	and	and	CCONJ
aiti-8098	277	37	dibl	dibl	PROPN
aiti-8098	277	38	parameters	parameter	NOUN
aiti-8098	277	39	.	.	PUNCT
aiti-8098	278	1	fig	fig	NOUN
aiti-8098	278	2	.	.	PUNCT
aiti-8098	279	1	12	12	NUM
aiti-8098	279	2	shows	show	VERB
aiti-8098	279	3	the	the	DET
aiti-8098	279	4	comparison	comparison	NOUN
aiti-8098	279	5	curve	curve	NOUN
aiti-8098	279	6	of	of	ADP
aiti-8098	279	7	id	id	PROPN
aiti-8098	279	8	-	-	PUNCT
aiti-8098	279	9	vgs	vgs	NOUN
aiti-8098	279	10	for	for	ADP
aiti-8098	279	11	vds	vds	NOUN
aiti-8098	279	12	=	=	PROPN
aiti-8098	279	13	0.8	0.8	NUM
aiti-8098	279	14	v.	v.	CCONJ
aiti-8098	279	15	it	it	PRON
aiti-8098	279	16	is	be	AUX
aiti-8098	279	17	observed	observe	VERB
aiti-8098	279	18	that	that	SCONJ
aiti-8098	279	19	the	the	DET
aiti-8098	279	20	graphene	graphene	NOUN
aiti-8098	279	21	fet	fet	NOUN
aiti-8098	279	22	offers	offer	VERB
aiti-8098	279	23	a	a	DET
aiti-8098	279	24	high	high	ADJ
aiti-8098	279	25	i	i	NOUN
aiti-8098	279	26	d	d	NOUN
aiti-8098	279	27	value	value	NOUN
aiti-8098	279	28	for	for	ADP
aiti-8098	279	29	the	the	DET
aiti-8098	279	30	same	same	ADJ
aiti-8098	279	31	voltage	voltage	NOUN
aiti-8098	279	32	of	of	ADP
aiti-8098	279	33	vds	vds	NOUN
aiti-8098	279	34	as	as	SCONJ
aiti-8098	279	35	compared	compare	VERB
aiti-8098	279	36	to	to	ADP
aiti-8098	279	37	the	the	DET
aiti-8098	279	38	silicon	silicon	NOUN
aiti-8098	279	39	mosfet	mosfet	NOUN
aiti-8098	279	40	.	.	PUNCT
aiti-8098	280	1	fig	fig	NOUN
aiti-8098	280	2	.	.	PUNCT
aiti-8098	281	1	13	13	NUM
aiti-8098	281	2	shows	show	VERB
aiti-8098	281	3	the	the	DET
aiti-8098	281	4	combined	combine	VERB
aiti-8098	281	5	curve	curve	NOUN
aiti-8098	281	6	of	of	ADP
aiti-8098	281	7	id	id	PROPN
aiti-8098	281	8	-	-	PUNCT
aiti-8098	281	9	vds	vds	NOUN
aiti-8098	281	10	for	for	ADP
aiti-8098	281	11	three	three	NUM
aiti-8098	281	12	different	different	ADJ
aiti-8098	281	13	gate	gate	NOUN
aiti-8098	281	14	voltages	voltage	NOUN
aiti-8098	281	15	.	.	PUNCT
aiti-8098	282	1	the	the	DET
aiti-8098	282	2	comparison	comparison	NOUN
aiti-8098	282	3	shows	show	VERB
aiti-8098	282	4	that	that	SCONJ
aiti-8098	282	5	the	the	DET
aiti-8098	282	6	graphene	graphene	NOUN
aiti-8098	282	7	fet	fet	NOUN
aiti-8098	282	8	offers	offer	VERB
aiti-8098	282	9	more	more	ADJ
aiti-8098	282	10	i	i	NOUN
aiti-8098	282	11	d	d	PROPN
aiti-8098	282	12	than	than	ADP
aiti-8098	282	13	the	the	DET
aiti-8098	282	14	silicon	silicon	NOUN
aiti-8098	282	15	mosfet	mosfet	NOUN
aiti-8098	282	16	,	,	PUNCT
aiti-8098	282	17	which	which	PRON
aiti-8098	282	18	is	be	AUX
aiti-8098	282	19	a	a	DET
aiti-8098	282	20	benefit	benefit	NOUN
aiti-8098	282	21	for	for	ADP
aiti-8098	282	22	the	the	DET
aiti-8098	282	23	high	high	ADJ
aiti-8098	282	24	-	-	PUNCT
aiti-8098	282	25	speed	speed	NOUN
aiti-8098	282	26	operation	operation	NOUN
aiti-8098	282	27	of	of	ADP
aiti-8098	282	28	the	the	DET
aiti-8098	282	29	device	device	NOUN
aiti-8098	282	30	.	.	PUNCT
aiti-8098	283	1	as	as	ADP
aiti-8098	283	2	per	per	ADP
aiti-8098	283	3	table	table	NOUN
aiti-8098	283	4	3	3	NUM
aiti-8098	283	5	,	,	PUNCT
aiti-8098	283	6	the	the	DET
aiti-8098	283	7	id(max	id(max	NOUN
aiti-8098	283	8	)	)	PUNCT
aiti-8098	283	9	is	be	AUX
aiti-8098	283	10	the	the	DET
aiti-8098	283	11	highest	high	ADJ
aiti-8098	283	12	as	as	SCONJ
aiti-8098	283	13	compared	compare	VERB
aiti-8098	283	14	to	to	ADP
aiti-8098	283	15	others	other	NOUN
aiti-8098	283	16	due	due	ADP
aiti-8098	283	17	to	to	ADP
aiti-8098	283	18	the	the	DET
aiti-8098	283	19	excellent	excellent	ADJ
aiti-8098	283	20	electrical	electrical	ADJ
aiti-8098	283	21	conductivity	conductivity	NOUN
aiti-8098	283	22	of	of	ADP
aiti-8098	283	23	graphene	graphene	NOUN
aiti-8098	283	24	material	material	NOUN
aiti-8098	283	25	and	and	CCONJ
aiti-8098	283	26	higher	high	ADJ
aiti-8098	283	27	mobility	mobility	NOUN
aiti-8098	283	28	.	.	PUNCT
aiti-8098	284	1	however	however	ADV
aiti-8098	284	2	,	,	PUNCT
aiti-8098	284	3	due	due	ADP
aiti-8098	284	4	to	to	ADP
aiti-8098	284	5	this	this	PRON
aiti-8098	284	6	,	,	PUNCT
aiti-8098	284	7	there	there	PRON
aiti-8098	284	8	is	be	VERB
aiti-8098	284	9	an	an	DET
aiti-8098	284	10	increase	increase	NOUN
aiti-8098	284	11	in	in	ADP
aiti-8098	284	12	ss	ss	NOUN
aiti-8098	284	13	,	,	PUNCT
aiti-8098	284	14	which	which	PRON
aiti-8098	284	15	is	be	AUX
aiti-8098	284	16	still	still	ADV
aiti-8098	284	17	lower	low	ADJ
aiti-8098	284	18	than	than	ADP
aiti-8098	284	19	that	that	PRON
aiti-8098	284	20	of	of	ADP
aiti-8098	284	21	the	the	DET
aiti-8098	284	22	silicon	silicon	NOUN
aiti-8098	284	23	fet	fet	PROPN
aiti-8098	284	24	.	.	PUNCT
aiti-8098	285	1	the	the	DET
aiti-8098	285	2	i	i	PROPN
aiti-8098	285	3	d	d	PROPN
aiti-8098	285	4	of	of	ADP
aiti-8098	285	5	the	the	DET
aiti-8098	285	6	silicon	silicon	NOUN
aiti-8098	285	7	fet	fet	PROPN
aiti-8098	285	8	decreases	decrease	VERB
aiti-8098	285	9	due	due	ADJ
aiti-8098	285	10	to	to	ADP
aiti-8098	285	11	short	short	ADJ
aiti-8098	285	12	channel	channel	NOUN
aiti-8098	285	13	effects	effect	NOUN
aiti-8098	285	14	.	.	PUNCT
aiti-8098	286	1	the	the	DET
aiti-8098	286	2	ion	ion	NOUN
aiti-8098	286	3	/	/	SYM
aiti-8098	286	4	ioff	ioff	NOUN
aiti-8098	286	5	ratio	ratio	NOUN
aiti-8098	286	6	of	of	ADP
aiti-8098	286	7	the	the	DET
aiti-8098	286	8	graphene	graphene	NOUN
aiti-8098	286	9	fet	fet	NOUN
aiti-8098	286	10	increases	increase	VERB
aiti-8098	286	11	due	due	ADJ
aiti-8098	286	12	to	to	ADP
aiti-8098	286	13	the	the	DET
aiti-8098	286	14	low	low	ADJ
aiti-8098	286	15	leakage	leakage	NOUN
aiti-8098	286	16	in	in	ADP
aiti-8098	286	17	graphene	graphene	NOUN
aiti-8098	286	18	material	material	NOUN
aiti-8098	286	19	in	in	ADP
aiti-8098	286	20	“	"	PUNCT
aiti-8098	286	21	off	off	ADJ
aiti-8098	286	22	”	"	PUNCT
aiti-8098	286	23	conditions	condition	NOUN
aiti-8098	286	24	.	.	PUNCT
aiti-8098	287	1	the	the	DET
aiti-8098	287	2	high	high	ADJ
aiti-8098	287	3	value	value	NOUN
aiti-8098	287	4	of	of	ADP
aiti-8098	287	5	ion	ion	NOUN
aiti-8098	287	6	also	also	ADV
aiti-8098	287	7	contributes	contribute	VERB
aiti-8098	287	8	to	to	ADP
aiti-8098	287	9	the	the	DET
aiti-8098	287	10	increase	increase	NOUN
aiti-8098	287	11	of	of	ADP
aiti-8098	287	12	this	this	DET
aiti-8098	287	13	ratio	ratio	NOUN
aiti-8098	287	14	.	.	PUNCT
aiti-8098	288	1	the	the	DET
aiti-8098	288	2	dibl	dibl	PROPN
aiti-8098	288	3	parameter	parameter	NOUN
aiti-8098	288	4	of	of	ADP
aiti-8098	288	5	the	the	DET
aiti-8098	288	6	graphene	graphene	NOUN
aiti-8098	288	7	fet	fet	NOUN
aiti-8098	288	8	is	be	AUX
aiti-8098	288	9	also	also	ADV
aiti-8098	288	10	lower	low	ADJ
aiti-8098	288	11	than	than	ADP
aiti-8098	288	12	that	that	PRON
aiti-8098	288	13	of	of	ADP
aiti-8098	288	14	the	the	DET
aiti-8098	288	15	si	si	NOUN
aiti-8098	288	16	-	-	NOUN
aiti-8098	288	17	mosfet	mosfet	NOUN
aiti-8098	288	18	due	due	ADP
aiti-8098	288	19	to	to	ADP
aiti-8098	288	20	the	the	DET
aiti-8098	288	21	better	well	ADJ
aiti-8098	288	22	control	control	NOUN
aiti-8098	288	23	of	of	ADP
aiti-8098	288	24	gate	gate	ADJ
aiti-8098	288	25	voltage	voltage	NOUN
aiti-8098	288	26	on	on	ADP
aiti-8098	288	27	the	the	DET
aiti-8098	288	28	channel	channel	NOUN
aiti-8098	288	29	in	in	ADP
aiti-8098	288	30	the	the	DET
aiti-8098	288	31	short	short	ADJ
aiti-8098	288	32	device	device	NOUN
aiti-8098	288	33	.	.	PUNCT
aiti-8098	289	1	the	the	DET
aiti-8098	289	2	i	i	PROPN
aiti-8098	289	3	d	d	PROPN
aiti-8098	289	4	of	of	ADP
aiti-8098	289	5	the	the	DET
aiti-8098	289	6	graphene	graphene	NOUN
aiti-8098	289	7	fet	fet	NOUN
aiti-8098	289	8	is	be	AUX
aiti-8098	289	9	the	the	DET
aiti-8098	289	10	highest	high	ADJ
aiti-8098	289	11	among	among	ADP
aiti-8098	289	12	all	all	DET
aiti-8098	289	13	published	publish	VERB
aiti-8098	289	14	results	result	NOUN
aiti-8098	289	15	shown	show	VERB
aiti-8098	289	16	in	in	ADP
aiti-8098	289	17	table	table	NOUN
aiti-8098	289	18	3	3	NUM
aiti-8098	289	19	due	due	ADP
aiti-8098	289	20	to	to	ADP
aiti-8098	289	21	the	the	DET
aiti-8098	289	22	higher	high	ADJ
aiti-8098	289	23	mobility	mobility	NOUN
aiti-8098	289	24	of	of	ADP
aiti-8098	289	25	graphene	graphene	ADJ
aiti-8098	289	26	material	material	NOUN
aiti-8098	289	27	.	.	PUNCT
aiti-8098	290	1	ss	ss	PROPN
aiti-8098	290	2	,	,	PUNCT
aiti-8098	290	3	dibl	dibl	PROPN
aiti-8098	290	4	,	,	PUNCT
aiti-8098	290	5	and	and	CCONJ
aiti-8098	290	6	ion	ion	NOUN
aiti-8098	290	7	/	/	SYM
aiti-8098	290	8	ioff	ioff	NOUN
aiti-8098	290	9	ratio	ratio	NOUN
aiti-8098	290	10	needs	need	VERB
aiti-8098	290	11	to	to	PART
aiti-8098	290	12	be	be	AUX
aiti-8098	290	13	further	far	ADV
aiti-8098	290	14	improved	improve	VERB
aiti-8098	290	15	for	for	ADP
aiti-8098	290	16	low	low	ADJ
aiti-8098	290	17	power	power	NOUN
aiti-8098	290	18	applications	application	NOUN
aiti-8098	290	19	.	.	PUNCT
aiti-8098	291	1	table	table	NOUN
aiti-8098	291	2	3	3	NUM
aiti-8098	291	3	comparison	comparison	NOUN
aiti-8098	291	4	of	of	ADP
aiti-8098	291	5	the	the	DET
aiti-8098	291	6	parameters	parameter	NOUN
aiti-8098	291	7	in	in	ADP
aiti-8098	291	8	graphene	graphene	NOUN
aiti-8098	291	9	and	and	CCONJ
aiti-8098	291	10	silicon	silicon	NOUN
aiti-8098	291	11	mosfets	mosfet	NOUN
aiti-8098	291	12	device	device	NOUN
aiti-8098	291	13	si	si	NOUN
aiti-8098	291	14	-	-	NOUN
aiti-8098	291	15	mosfet	mosfet	NOUN
aiti-8098	291	16	(	(	PUNCT
aiti-8098	291	17	this	this	DET
aiti-8098	291	18	work	work	NOUN
aiti-8098	291	19	)	)	PUNCT
aiti-8098	291	20	graphene	graphene	NOUN
aiti-8098	291	21	fet	fet	PROPN
aiti-8098	291	22	(	(	PUNCT
aiti-8098	291	23	this	this	DET
aiti-8098	291	24	work	work	NOUN
aiti-8098	291	25	)	)	PUNCT
aiti-8098	291	26	soi	soi	NOUN
aiti-8098	291	27	-	-	PUNCT
aiti-8098	291	28	jlt	jlt	PROPN
aiti-8098	292	1	[	[	X
aiti-8098	292	2	11	11	NUM
aiti-8098	292	3	]	]	X
aiti-8098	292	4	finfet	finfet	NOUN
aiti-8098	293	1	[	[	X
aiti-8098	293	2	12	12	NUM
aiti-8098	293	3	]	]	X
aiti-8098	293	4	gnr	gnr	NOUN
aiti-8098	293	5	-	-	PUNCT
aiti-8098	293	6	tfet	tfet	NOUN
aiti-8098	293	7	[	[	X
aiti-8098	293	8	19	19	NUM
aiti-8098	293	9	]	]	PUNCT
aiti-8098	293	10	channel	channel	NOUN
aiti-8098	293	11	length	length	NOUN
aiti-8098	293	12	(	(	PUNCT
aiti-8098	293	13	nm	nm	NOUN
aiti-8098	293	14	)	)	PUNCT
aiti-8098	293	15	20	20	NUM
aiti-8098	293	16	20	20	NUM
aiti-8098	293	17	10	10	NUM
aiti-8098	293	18	8	8	NUM
aiti-8098	293	19	20	20	NUM
aiti-8098	293	20	vdd(max	vdd(max	NOUN
aiti-8098	293	21	)	)	PUNCT
aiti-8098	293	22	(	(	PUNCT
aiti-8098	293	23	v	v	NOUN
aiti-8098	293	24	)	)	PUNCT
aiti-8098	293	25	0.8	0.8	NUM
aiti-8098	293	26	0.8	0.8	NUM
aiti-8098	293	27	0.8	0.8	NUM
aiti-8098	293	28	0.9	0.9	NUM
aiti-8098	293	29	0.1	0.1	NUM
aiti-8098	293	30	electron	electron	NOUN
aiti-8098	293	31	mobility	mobility	NOUN
aiti-8098	293	32	(	(	PUNCT
aiti-8098	293	33	cm2	cm2	NOUN
aiti-8098	293	34	/	/	SYM
aiti-8098	293	35	v.s	v.s	NOUN
aiti-8098	293	36	)	)	PUNCT
aiti-8098	293	37	1000	1000	NUM
aiti-8098	293	38	30000	30000	NUM
aiti-8098	293	39	1000	1000	NUM
aiti-8098	293	40	1000	1000	NUM
aiti-8098	293	41	not	not	PART
aiti-8098	293	42	mentioned	mention	VERB
aiti-8098	293	43	hole	hole	NOUN
aiti-8098	293	44	mobility	mobility	NOUN
aiti-8098	293	45	(	(	PUNCT
aiti-8098	293	46	cm2	cm2	NOUN
aiti-8098	293	47	/	/	SYM
aiti-8098	293	48	v.s	v.s	NOUN
aiti-8098	293	49	)	)	PUNCT
aiti-8098	293	50	500	500	NUM
aiti-8098	293	51	30000	30000	NUM
aiti-8098	293	52	500	500	NUM
aiti-8098	293	53	500	500	NUM
aiti-8098	293	54	not	not	PART
aiti-8098	293	55	mentioned	mention	VERB
aiti-8098	293	56	bandgap	bandgap	NOUN
aiti-8098	293	57	(	(	PUNCT
aiti-8098	293	58	ev	ev	PROPN
aiti-8098	293	59	)	)	PUNCT
aiti-8098	293	60	1.08	1.08	NUM
aiti-8098	293	61	0.7	0.7	NUM
aiti-8098	293	62	1.08	1.08	NUM
aiti-8098	293	63	1.08	1.08	NUM
aiti-8098	293	64	0.289	0.289	NUM
aiti-8098	293	65	base	base	NOUN
aiti-8098	293	66	material	material	NOUN
aiti-8098	293	67	silicon	silicon	NOUN
aiti-8098	293	68	user	user	NOUN
aiti-8098	293	69	-	-	PUNCT
aiti-8098	293	70	defined	define	VERB
aiti-8098	293	71	graphene	graphene	NOUN
aiti-8098	293	72	silicon	silicon	NOUN
aiti-8098	293	73	silicon	silicon	NOUN
aiti-8098	293	74	graphene	graphene	PROPN
aiti-8098	293	75	gate	gate	PROPN
aiti-8098	293	76	dielectric	dielectric	PROPN
aiti-8098	293	77	material	material	PROPN
aiti-8098	293	78	hfo2	hfo2	PROPN
aiti-8098	293	79	hfo2	hfo2	PROPN
aiti-8098	293	80	hfo2	hfo2	PROPN
aiti-8098	293	81	sio2	sio2	PROPN
aiti-8098	293	82	sio2	sio2	PROPN
aiti-8098	293	83	vth	vth	PROPN
aiti-8098	293	84	(	(	PUNCT
aiti-8098	293	85	v	v	NOUN
aiti-8098	293	86	)	)	PUNCT
aiti-8098	293	87	0.0218	0.0218	NUM
aiti-8098	293	88	0.040	0.040	NUM
aiti-8098	293	89	0.327	0.327	NUM
aiti-8098	293	90	subthreshold	subthreshold	ADJ
aiti-8098	293	91	swing	swing	NOUN
aiti-8098	293	92	(	(	PUNCT
aiti-8098	293	93	mv	mv	PROPN
aiti-8098	293	94	/	/	SYM
aiti-8098	293	95	dec	dec	PROPN
aiti-8098	293	96	.	.	PROPN
aiti-8098	293	97	)	)	PUNCT
aiti-8098	294	1	115	115	NUM
aiti-8098	294	2	114	114	NUM
aiti-8098	294	3	109.9	109.9	NUM
aiti-8098	294	4	63.13	63.13	NUM
aiti-8098	294	5	27.4	27.4	NUM
aiti-8098	294	6	id(max	id(max	NOUN
aiti-8098	294	7	)	)	PUNCT
aiti-8098	294	8	(	(	PUNCT
aiti-8098	294	9	a/µm	a/µm	NOUN
aiti-8098	294	10	)	)	PUNCT
aiti-8098	295	1	0.0027	0.0027	NUM
aiti-8098	295	2	0.00638	0.00638	NUM
aiti-8098	295	3	330	330	NUM
aiti-8098	295	4	×	×	NOUN
aiti-8098	295	5	10	10	NUM
aiti-8098	295	6	-	-	SYM
aiti-8098	295	7	6	6	NUM
aiti-8098	295	8	0.00001	0.00001	NUM
aiti-8098	295	9	4.4	4.4	NUM
aiti-8098	295	10	×	×	NOUN
aiti-8098	295	11	10	10	NUM
aiti-8098	295	12	-	-	SYM
aiti-8098	295	13	6	6	NUM
aiti-8098	295	14	ion	ion	NOUN
aiti-8098	295	15	/	/	SYM
aiti-8098	295	16	ioff	ioff	NOUN
aiti-8098	295	17	6401	6401	NUM
aiti-8098	295	18	14379	14379	NUM
aiti-8098	295	19	420000	420000	NUM
aiti-8098	295	20	106	106	NUM
aiti-8098	295	21	116	116	NUM
aiti-8098	295	22	dibl	dibl	PROPN
aiti-8098	295	23	(	(	PUNCT
aiti-8098	295	24	mv	mv	PROPN
aiti-8098	295	25	/	/	SYM
aiti-8098	295	26	v	v	NOUN
aiti-8098	295	27	)	)	PUNCT
aiti-8098	295	28	129	129	NUM
aiti-8098	295	29	123	123	NUM
aiti-8098	295	30	218	218	NUM
aiti-8098	295	31	85	85	NUM
aiti-8098	295	32	fig	fig	NOUN
aiti-8098	295	33	.	.	PUNCT
aiti-8098	296	1	12	12	NUM
aiti-8098	296	2	comparison	comparison	NOUN
aiti-8098	296	3	curve	curve	NOUN
aiti-8098	296	4	of	of	ADP
aiti-8098	296	5	id	id	PROPN
aiti-8098	296	6	-	-	PUNCT
aiti-8098	296	7	vgs	vgs	NOUN
aiti-8098	296	8	for	for	ADP
aiti-8098	296	9	vds	vds	PROPN
aiti-8098	296	10	=	=	PROPN
aiti-8098	296	11	0.8	0.8	NUM
aiti-8098	296	12	v	v	NUM
aiti-8098	296	13	0.00e+00	0.00e+00	NUM
aiti-8098	296	14	2.00e-04	2.00e-04	NUM
aiti-8098	296	15	4.00e-04	4.00e-04	NUM
aiti-8098	296	16	6.00e-04	6.00e-04	NUM
aiti-8098	296	17	8.00e-04	8.00e-04	NUM
aiti-8098	296	18	1.00e-03	1.00e-03	NUM
aiti-8098	296	19	1.20e-03	1.20e-03	NUM
aiti-8098	296	20	1.40e-03	1.40e-03	NUM
aiti-8098	296	21	0	0	NUM
aiti-8098	296	22	0	0	NUM
aiti-8098	296	23	.0	.0	NUM
aiti-8098	296	24	8	8	NUM
aiti-8098	296	25	0	0	NUM
aiti-8098	296	26	.1	.1	NUM
aiti-8098	296	27	6	6	NUM
aiti-8098	296	28	0	0	NUM
aiti-8098	296	29	.2	.2	NUM
aiti-8098	296	30	4	4	NUM
aiti-8098	296	31	0	0	NUM
aiti-8098	296	32	.3	.3	NUM
aiti-8098	296	33	2	2	NUM
aiti-8098	296	34	0	0	NUM
aiti-8098	297	1	.4	.4	NUM
aiti-8098	297	2	0	0	NUM
aiti-8098	298	1	.4	.4	NUM
aiti-8098	298	2	4	4	NUM
aiti-8098	298	3	0	0	NUM
aiti-8098	298	4	.4	.4	NUM
aiti-8098	298	5	8	8	NUM
aiti-8098	298	6	0	0	NUM
aiti-8098	298	7	.5	.5	NUM
aiti-8098	298	8	6	6	NUM
aiti-8098	298	9	0	0	NUM
aiti-8098	298	10	.6	.6	NUM
aiti-8098	298	11	4	4	NUM
aiti-8098	298	12	0	0	NUM
aiti-8098	298	13	.7	.7	NUM
aiti-8098	298	14	2	2	NUM
aiti-8098	298	15	0	0	NUM
aiti-8098	298	16	.8	.8	NUM
aiti-8098	299	1	d	d	INTJ
aiti-8098	299	2	ra	ra	PROPN
aiti-8098	299	3	in	in	ADP
aiti-8098	299	4	c	c	PROPN
aiti-8098	299	5	u	u	PROPN
aiti-8098	299	6	rr	rr	PROPN
aiti-8098	299	7	en	en	PROPN
aiti-8098	299	8	t	t	PROPN
aiti-8098	299	9	(	(	PUNCT
aiti-8098	299	10	a	a	DET
aiti-8098	299	11	/µ	/µ	ADJ
aiti-8098	299	12	m	m	NOUN
aiti-8098	299	13	)	)	PUNCT
aiti-8098	299	14	gate	gate	NOUN
aiti-8098	299	15	voltage	voltage	NOUN
aiti-8098	299	16	(	(	PUNCT
aiti-8098	299	17	v	v	NOUN
aiti-8098	299	18	)	)	PUNCT
aiti-8098	299	19	drain	drain	NOUN
aiti-8098	299	20	current	current	NOUN
aiti-8098	299	21	(	(	PUNCT
aiti-8098	299	22	gr_20	gr_20	PROPN
aiti-8098	299	23	nm	nm	NOUN
aiti-8098	299	24	)	)	PUNCT
aiti-8098	299	25	drain	drain	NOUN
aiti-8098	299	26	current	current	ADJ
aiti-8098	299	27	(	(	PUNCT
aiti-8098	299	28	si_20	si_20	PROPN
aiti-8098	299	29	nm	nm	NOUN
aiti-8098	299	30	)	)	PUNCT
aiti-8098	299	31	27	27	NUM
aiti-8098	299	32	advances	advance	NOUN
aiti-8098	299	33	in	in	ADP
aiti-8098	299	34	technology	technology	NOUN
aiti-8098	299	35	innovation	innovation	NOUN
aiti-8098	299	36	,	,	PUNCT
aiti-8098	299	37	vol	vol	NOUN
aiti-8098	299	38	.	.	PROPN
aiti-8098	300	1	7	7	NUM
aiti-8098	300	2	,	,	PUNCT
aiti-8098	300	3	no	no	INTJ
aiti-8098	300	4	.	.	NOUN
aiti-8098	300	5	1	1	NUM
aiti-8098	300	6	,	,	PUNCT
aiti-8098	300	7	2022	2022	NUM
aiti-8098	300	8	,	,	PUNCT
aiti-8098	300	9	pp	pp	ADJ
aiti-8098	300	10	.	.	PUNCT
aiti-8098	301	1	19	19	NUM
aiti-8098	301	2	-	-	SYM
aiti-8098	301	3	29	29	NUM
aiti-8098	301	4	fig	fig	NOUN
aiti-8098	301	5	.	.	PUNCT
aiti-8098	302	1	13	13	NUM
aiti-8098	302	2	combined	combine	VERB
aiti-8098	302	3	curve	curve	NOUN
aiti-8098	302	4	of	of	ADP
aiti-8098	302	5	id	id	PROPN
aiti-8098	302	6	-	-	PUNCT
aiti-8098	302	7	vds	vds	NOUN
aiti-8098	302	8	for	for	ADP
aiti-8098	302	9	three	three	NUM
aiti-8098	302	10	different	different	ADJ
aiti-8098	302	11	gate	gate	NOUN
aiti-8098	302	12	voltages	voltage	NOUN
aiti-8098	302	13	7	7	NUM
aiti-8098	302	14	.	.	PUNCT
aiti-8098	302	15	conclusions	conclusion	NOUN
aiti-8098	302	16	the	the	DET
aiti-8098	302	17	silvaco	silvaco	ADJ
aiti-8098	302	18	tcad	tcad	ADJ
aiti-8098	302	19	tool	tool	NOUN
aiti-8098	302	20	does	do	AUX
aiti-8098	302	21	not	not	PART
aiti-8098	302	22	have	have	VERB
aiti-8098	302	23	an	an	DET
aiti-8098	302	24	inbuilt	inbuilt	ADJ
aiti-8098	302	25	graphene	graphene	NOUN
aiti-8098	302	26	material	material	NOUN
aiti-8098	302	27	;	;	PUNCT
aiti-8098	302	28	hence	hence	ADV
aiti-8098	302	29	,	,	PUNCT
aiti-8098	302	30	a	a	DET
aiti-8098	302	31	user	user	NOUN
aiti-8098	302	32	-	-	PUNCT
aiti-8098	302	33	defined	define	VERB
aiti-8098	302	34	graphene	graphene	NOUN
aiti-8098	302	35	material	material	NOUN
aiti-8098	302	36	is	be	AUX
aiti-8098	302	37	added	add	VERB
aiti-8098	302	38	in	in	ADP
aiti-8098	302	39	this	this	DET
aiti-8098	302	40	study	study	NOUN
aiti-8098	302	41	.	.	PUNCT
aiti-8098	303	1	this	this	DET
aiti-8098	303	2	material	material	NOUN
aiti-8098	303	3	is	be	AUX
aiti-8098	303	4	formed	form	VERB
aiti-8098	303	5	by	by	ADP
aiti-8098	303	6	using	use	VERB
aiti-8098	303	7	the	the	DET
aiti-8098	303	8	parameters	parameter	NOUN
aiti-8098	303	9	of	of	ADP
aiti-8098	303	10	the	the	DET
aiti-8098	303	11	existing	exist	VERB
aiti-8098	303	12	materials	material	NOUN
aiti-8098	303	13	,	,	PUNCT
aiti-8098	303	14	which	which	PRON
aiti-8098	303	15	are	be	AUX
aiti-8098	303	16	close	close	ADJ
aiti-8098	303	17	to	to	ADP
aiti-8098	303	18	that	that	PRON
aiti-8098	303	19	of	of	ADP
aiti-8098	303	20	graphene	graphene	NOUN
aiti-8098	303	21	,	,	PUNCT
aiti-8098	303	22	and	and	CCONJ
aiti-8098	303	23	the	the	DET
aiti-8098	303	24	simulation	simulation	NOUN
aiti-8098	303	25	is	be	AUX
aiti-8098	303	26	carried	carry	VERB
aiti-8098	303	27	out	out	ADP
aiti-8098	303	28	.	.	PUNCT
aiti-8098	304	1	the	the	DET
aiti-8098	304	2	first	first	ADJ
aiti-8098	304	3	graphene	graphene	ADJ
aiti-8098	304	4	channel	channel	NOUN
aiti-8098	304	5	fet	fet	NOUN
aiti-8098	304	6	with	with	ADP
aiti-8098	304	7	100	100	NUM
aiti-8098	304	8	nm	nm	ADJ
aiti-8098	304	9	channel	channel	NOUN
aiti-8098	304	10	length	length	NOUN
aiti-8098	304	11	is	be	AUX
aiti-8098	304	12	implemented	implement	VERB
aiti-8098	304	13	using	use	VERB
aiti-8098	304	14	hfo2	hfo2	NOUN
aiti-8098	304	15	material	material	NOUN
aiti-8098	304	16	as	as	ADP
aiti-8098	304	17	the	the	DET
aiti-8098	304	18	dielectric	dielectric	NOUN
aiti-8098	304	19	under	under	ADP
aiti-8098	304	20	gate	gate	NOUN
aiti-8098	304	21	terminal	terminal	NOUN
aiti-8098	304	22	,	,	PUNCT
aiti-8098	304	23	and	and	CCONJ
aiti-8098	304	24	compared	compare	VERB
aiti-8098	304	25	with	with	ADP
aiti-8098	304	26	another	another	DET
aiti-8098	304	27	implementation	implementation	NOUN
aiti-8098	304	28	of	of	ADP
aiti-8098	304	29	100	100	NUM
aiti-8098	304	30	nm	nm	PRON
aiti-8098	304	31	silicon	silicon	NOUN
aiti-8098	304	32	channel	channel	PROPN
aiti-8098	304	33	fet	fet	PROPN
aiti-8098	304	34	.	.	PUNCT
aiti-8098	305	1	the	the	DET
aiti-8098	305	2	results	result	NOUN
aiti-8098	305	3	are	be	AUX
aiti-8098	305	4	in	in	ADP
aiti-8098	305	5	good	good	ADJ
aiti-8098	305	6	agreement	agreement	NOUN
aiti-8098	305	7	with	with	ADP
aiti-8098	305	8	each	each	DET
aiti-8098	305	9	other	other	ADJ
aiti-8098	305	10	.	.	PUNCT
aiti-8098	306	1	the	the	DET
aiti-8098	306	2	high	high	ADJ
aiti-8098	306	3	dielectric	dielectric	ADJ
aiti-8098	306	4	material	material	NOUN
aiti-8098	306	5	hfo2	hfo2	NOUN
aiti-8098	306	6	offers	offer	VERB
aiti-8098	306	7	less	less	ADJ
aiti-8098	306	8	leakage	leakage	NOUN
aiti-8098	306	9	current	current	NOUN
aiti-8098	306	10	;	;	PUNCT
aiti-8098	306	11	hence	hence	ADV
aiti-8098	306	12	,	,	PUNCT
aiti-8098	306	13	it	it	PRON
aiti-8098	306	14	improves	improve	VERB
aiti-8098	306	15	the	the	DET
aiti-8098	306	16	ion	ion	NOUN
aiti-8098	306	17	/	/	SYM
aiti-8098	306	18	ioff	ioff	NOUN
aiti-8098	306	19	ratio	ratio	NOUN
aiti-8098	306	20	of	of	ADP
aiti-8098	306	21	the	the	DET
aiti-8098	306	22	device	device	NOUN
aiti-8098	306	23	.	.	PUNCT
aiti-8098	307	1	the	the	DET
aiti-8098	307	2	graphene	graphene	NOUN
aiti-8098	307	3	fet	fet	NOUN
aiti-8098	307	4	has	have	AUX
aiti-8098	307	5	improved	improve	VERB
aiti-8098	307	6	ss	ss	NOUN
aiti-8098	307	7	and	and	CCONJ
aiti-8098	307	8	dibl	dibl	PROPN
aiti-8098	307	9	parameters	parameter	NOUN
aiti-8098	307	10	.	.	PUNCT
aiti-8098	308	1	to	to	PART
aiti-8098	308	2	study	study	VERB
aiti-8098	308	3	the	the	DET
aiti-8098	308	4	short	short	ADJ
aiti-8098	308	5	channel	channel	NOUN
aiti-8098	308	6	effects	effect	NOUN
aiti-8098	308	7	,	,	PUNCT
aiti-8098	308	8	further	far	ADV
aiti-8098	308	9	scaling	scaling	NOUN
aiti-8098	308	10	of	of	ADP
aiti-8098	308	11	the	the	DET
aiti-8098	308	12	graphene	graphene	NOUN
aiti-8098	308	13	fet	fet	NOUN
aiti-8098	308	14	is	be	AUX
aiti-8098	308	15	carried	carry	VERB
aiti-8098	308	16	out	out	ADP
aiti-8098	308	17	to	to	ADP
aiti-8098	308	18	the	the	DET
aiti-8098	308	19	20	20	NUM
aiti-8098	308	20	nm	nm	ADJ
aiti-8098	308	21	channel	channel	NOUN
aiti-8098	308	22	length	length	NOUN
aiti-8098	308	23	.	.	PUNCT
aiti-8098	309	1	this	this	DET
aiti-8098	309	2	small	small	ADJ
aiti-8098	309	3	channel	channel	NOUN
aiti-8098	309	4	device	device	NOUN
aiti-8098	309	5	also	also	ADV
aiti-8098	309	6	shows	show	VERB
aiti-8098	309	7	the	the	DET
aiti-8098	309	8	improvement	improvement	NOUN
aiti-8098	309	9	in	in	ADP
aiti-8098	309	10	dibl	dibl	PROPN
aiti-8098	309	11	,	,	PUNCT
aiti-8098	309	12	ss	ss	PROPN
aiti-8098	309	13	,	,	PUNCT
aiti-8098	309	14	and	and	CCONJ
aiti-8098	309	15	id(max	id(max	PROPN
aiti-8098	309	16	)	)	PUNCT
aiti-8098	309	17	over	over	ADP
aiti-8098	309	18	the	the	DET
aiti-8098	309	19	20	20	NUM
aiti-8098	309	20	nm	nm	PRON
aiti-8098	309	21	silicon	silicon	NOUN
aiti-8098	309	22	fet	fet	NOUN
aiti-8098	309	23	and	and	CCONJ
aiti-8098	309	24	other	other	ADJ
aiti-8098	309	25	published	publish	VERB
aiti-8098	309	26	results	result	NOUN
aiti-8098	309	27	.	.	PUNCT
aiti-8098	310	1	the	the	DET
aiti-8098	310	2	saturation	saturation	NOUN
aiti-8098	310	3	curves	curve	NOUN
aiti-8098	310	4	of	of	ADP
aiti-8098	310	5	the	the	DET
aiti-8098	310	6	both	both	PRON
aiti-8098	310	7	are	be	AUX
aiti-8098	310	8	plotted	plot	VERB
aiti-8098	310	9	and	and	CCONJ
aiti-8098	310	10	compared	compare	VERB
aiti-8098	310	11	,	,	PUNCT
aiti-8098	310	12	and	and	CCONJ
aiti-8098	310	13	it	it	PRON
aiti-8098	310	14	is	be	AUX
aiti-8098	310	15	observed	observe	VERB
aiti-8098	310	16	that	that	SCONJ
aiti-8098	310	17	the	the	DET
aiti-8098	310	18	graphene	graphene	NOUN
aiti-8098	310	19	fet	fet	NOUN
aiti-8098	310	20	provides	provide	VERB
aiti-8098	310	21	more	more	ADJ
aiti-8098	310	22	i	i	NOUN
aiti-8098	310	23	d	d	VERB
aiti-8098	310	24	as	as	ADP
aiti-8098	310	25	compared	compare	VERB
aiti-8098	310	26	to	to	ADP
aiti-8098	310	27	the	the	DET
aiti-8098	310	28	silicon	silicon	NOUN
aiti-8098	310	29	mosfet	mosfet	NOUN
aiti-8098	310	30	.	.	PUNCT
aiti-8098	311	1	as	as	SCONJ
aiti-8098	311	2	a	a	DET
aiti-8098	311	3	high	high	ADJ
aiti-8098	311	4	ion	ion	NOUN
aiti-8098	311	5	/	/	SYM
aiti-8098	311	6	ioff	ioff	NOUN
aiti-8098	311	7	ratio	ratio	NOUN
aiti-8098	311	8	is	be	AUX
aiti-8098	311	9	observed	observe	VERB
aiti-8098	311	10	,	,	PUNCT
aiti-8098	311	11	it	it	PRON
aiti-8098	311	12	is	be	AUX
aiti-8098	311	13	concluded	conclude	VERB
aiti-8098	311	14	that	that	SCONJ
aiti-8098	311	15	the	the	DET
aiti-8098	311	16	graphene	graphene	ADJ
aiti-8098	311	17	channel	channel	NOUN
aiti-8098	311	18	fet	fet	PROPN
aiti-8098	311	19	can	can	AUX
aiti-8098	311	20	be	be	AUX
aiti-8098	311	21	a	a	DET
aiti-8098	311	22	perfect	perfect	ADJ
aiti-8098	311	23	replacement	replacement	NOUN
aiti-8098	311	24	for	for	ADP
aiti-8098	311	25	a	a	DET
aiti-8098	311	26	conventional	conventional	ADJ
aiti-8098	311	27	silicon	silicon	NOUN
aiti-8098	311	28	mosfet	mosfet	NOUN
aiti-8098	311	29	at	at	ADP
aiti-8098	311	30	a	a	DET
aiti-8098	311	31	small	small	ADJ
aiti-8098	311	32	channel	channel	NOUN
aiti-8098	311	33	length	length	NOUN
aiti-8098	311	34	for	for	ADP
aiti-8098	311	35	low	low	ADJ
aiti-8098	311	36	power	power	NOUN
aiti-8098	311	37	and	and	CCONJ
aiti-8098	311	38	high	high	ADJ
aiti-8098	311	39	-	-	PUNCT
aiti-8098	311	40	speed	speed	NOUN
aiti-8098	311	41	applications	application	NOUN
aiti-8098	311	42	.	.	PUNCT
aiti-8098	312	1	further	further	ADJ
aiti-8098	312	2	improvement	improvement	NOUN
aiti-8098	312	3	of	of	ADP
aiti-8098	312	4	the	the	DET
aiti-8098	312	5	implemented	implement	VERB
aiti-8098	312	6	fet	fet	NOUN
aiti-8098	312	7	using	use	VERB
aiti-8098	312	8	the	the	DET
aiti-8098	312	9	user	user	NOUN
aiti-8098	312	10	-	-	PUNCT
aiti-8098	312	11	defined	define	VERB
aiti-8098	312	12	graphene	graphene	NOUN
aiti-8098	312	13	material	material	NOUN
aiti-8098	312	14	could	could	AUX
aiti-8098	312	15	be	be	AUX
aiti-8098	312	16	achieved	achieve	VERB
aiti-8098	312	17	by	by	ADP
aiti-8098	312	18	using	use	VERB
aiti-8098	312	19	a	a	DET
aiti-8098	312	20	double	double	ADJ
aiti-8098	312	21	gate	gate	NOUN
aiti-8098	312	22	structure	structure	NOUN
aiti-8098	312	23	.	.	PUNCT
aiti-8098	313	1	conflicts	conflict	NOUN
aiti-8098	313	2	of	of	ADP
aiti-8098	313	3	interest	interest	NOUN
aiti-8098	313	4	the	the	DET
aiti-8098	313	5	authors	author	NOUN
aiti-8098	313	6	declare	declare	VERB
aiti-8098	313	7	no	no	DET
aiti-8098	313	8	conflict	conflict	NOUN
aiti-8098	313	9	of	of	ADP
aiti-8098	313	10	interest	interest	NOUN
aiti-8098	313	11	.	.	PUNCT
aiti-8098	314	1	references	reference	NOUN
aiti-8098	314	2	[	[	X
aiti-8098	314	3	1	1	X
aiti-8098	314	4	]	]	PUNCT
aiti-8098	314	5	the	the	DET
aiti-8098	314	6	international	international	ADJ
aiti-8098	314	7	technology	technology	NOUN
aiti-8098	314	8	roadmap	roadmap	NOUN
aiti-8098	314	9	for	for	ADP
aiti-8098	314	10	semiconductors	semiconductor	NOUN
aiti-8098	314	11	,	,	PUNCT
aiti-8098	314	12	“	"	PUNCT
aiti-8098	314	13	international	international	ADJ
aiti-8098	314	14	technology	technology	NOUN
aiti-8098	314	15	roadmap	roadmap	NOUN
aiti-8098	314	16	for	for	ADP
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aiti-8098	314	19	,	,	PUNCT
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aiti-8098	314	24	c	c	PROPN
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aiti-8098	315	2	2	2	X
aiti-8098	315	3	]	]	PUNCT
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aiti-8098	315	17	mosfet	mosfet	NOUN
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aiti-8098	315	22	,	,	PUNCT
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aiti-8098	316	2	-	-	SYM
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aiti-8098	317	17	j.	j.	PROPN
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aiti-8098	317	45	,	,	PUNCT
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aiti-8098	319	2	-	-	SYM
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aiti-8098	320	2	4	4	X
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aiti-8098	323	17	,	,	PUNCT
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aiti-8098	325	2	-	-	SYM
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aiti-8098	325	4	,	,	PUNCT
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aiti-8098	332	5	4.00e-03	4.00e-03	NUM
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aiti-8098	334	1	4	4	NUM
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aiti-8098	335	5	6	6	NUM
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aiti-8098	335	8	4	4	NUM
aiti-8098	335	9	0	0	NUM
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aiti-8098	335	11	2	2	NUM
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aiti-8098	337	14	vgs3	vgs3	NOUN
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aiti-8098	337	17	v	v	NUM
aiti-8098	337	18	si_20	si_20	VERB
aiti-8098	337	19	nm	nm	DET
aiti-8098	337	20	vgs1	vgs1	NOUN
aiti-8098	337	21	=	=	PUNCT
aiti-8098	337	22	0.3	0.3	NUM
aiti-8098	337	23	v	v	NUM
aiti-8098	337	24	si_20	si_20	VERB
aiti-8098	337	25	nm	nm	ADV
aiti-8098	337	26	vgs2	vgs2	ADV
aiti-8098	337	27	=	=	PUNCT
aiti-8098	337	28	0.6	0.6	NUM
aiti-8098	337	29	v	v	NUM
aiti-8098	337	30	si_20	si_20	VERB
aiti-8098	337	31	nm	nm	DET
aiti-8098	337	32	vgs3	vgs3	NOUN
aiti-8098	337	33	=	=	NOUN
aiti-8098	337	34	0.8	0.8	NUM
aiti-8098	337	35	v	v	NUM
aiti-8098	337	36	28	28	NUM
aiti-8098	337	37	advances	advance	NOUN
aiti-8098	337	38	in	in	ADP
aiti-8098	337	39	technology	technology	NOUN
aiti-8098	337	40	innovation	innovation	NOUN
aiti-8098	337	41	,	,	PUNCT
aiti-8098	337	42	vol	vol	NOUN
aiti-8098	337	43	.	.	PROPN
aiti-8098	337	44	7	7	NUM
aiti-8098	337	45	,	,	PUNCT
aiti-8098	337	46	no	no	INTJ
aiti-8098	337	47	.	.	NOUN
aiti-8098	337	48	1	1	NUM
aiti-8098	337	49	,	,	PUNCT
aiti-8098	337	50	2022	2022	NUM
aiti-8098	337	51	,	,	PUNCT
aiti-8098	337	52	pp	pp	ADJ
aiti-8098	337	53	.	.	PUNCT
aiti-8098	338	1	19	19	NUM
aiti-8098	338	2	-	-	SYM
aiti-8098	338	3	29	29	NUM
aiti-8098	339	1	[	[	NOUN
aiti-8098	339	2	8	8	NUM
aiti-8098	339	3	]	]	X
aiti-8098	339	4	f.	f.	PROPN
aiti-8098	339	5	w.	w.	PROPN
aiti-8098	339	6	chen	chen	PROPN
aiti-8098	339	7	,	,	PUNCT
aiti-8098	339	8	h.	h.	PROPN
aiti-8098	339	9	ilatikhameneh	ilatikhameneh	PROPN
aiti-8098	339	10	,	,	PUNCT
aiti-8098	339	11	g.	g.	PROPN
aiti-8098	339	12	klimeck	klimeck	PROPN
aiti-8098	339	13	,	,	PUNCT
aiti-8098	339	14	z.	z.	PROPN
aiti-8098	339	15	chen	chen	PROPN
aiti-8098	339	16	,	,	PUNCT
aiti-8098	339	17	and	and	CCONJ
aiti-8098	339	18	r.	r.	PROPN
aiti-8098	339	19	rahman	rahman	PROPN
aiti-8098	339	20	,	,	PUNCT
aiti-8098	339	21	“	"	PUNCT
aiti-8098	339	22	configurable	configurable	ADJ
aiti-8098	339	23	electrostatically	electrostatically	ADV
aiti-8098	339	24	doped	dope	VERB
aiti-8098	339	25	high	high	ADJ
aiti-8098	339	26	-	-	PUNCT
aiti-8098	339	27	performance	performance	NOUN
aiti-8098	339	28	bilayer	bilayer	NOUN
aiti-8098	339	29	graphene	graphene	NOUN
aiti-8098	339	30	tunnel	tunnel	NOUN
aiti-8098	339	31	fet	fet	NOUN
aiti-8098	339	32	,	,	PUNCT
aiti-8098	339	33	”	"	PUNCT
aiti-8098	339	34	ieee	ieee	NOUN
aiti-8098	339	35	journal	journal	NOUN
aiti-8098	339	36	of	of	ADP
aiti-8098	339	37	electron	electron	PROPN
aiti-8098	339	38	devices	devices	PROPN
aiti-8098	339	39	society	society	NOUN
aiti-8098	339	40	,	,	PUNCT
aiti-8098	339	41	vol	vol	NOUN
aiti-8098	339	42	.	.	PROPN
aiti-8098	340	1	4	4	NUM
aiti-8098	340	2	,	,	PUNCT
aiti-8098	340	3	no	no	INTJ
aiti-8098	340	4	.	.	NOUN
aiti-8098	340	5	3	3	NUM
aiti-8098	340	6	,	,	PUNCT
aiti-8098	340	7	pp	pp	ADJ
aiti-8098	340	8	.	.	PUNCT
aiti-8098	341	1	124	124	NUM
aiti-8098	341	2	-	-	SYM
aiti-8098	341	3	128	128	NUM
aiti-8098	341	4	,	,	PUNCT
aiti-8098	341	5	may	may	AUX
aiti-8098	341	6	2016	2016	NUM
aiti-8098	341	7	.	.	PUNCT
aiti-8098	342	1	[	[	X
aiti-8098	342	2	9	9	NUM
aiti-8098	342	3	]	]	PUNCT
aiti-8098	342	4	t.	t.	PROPN
aiti-8098	342	5	k.	k.	PROPN
aiti-8098	342	6	agarwal	agarwal	PROPN
aiti-8098	342	7	,	,	PUNCT
aiti-8098	342	8	a.	a.	NOUN
aiti-8098	342	9	nourbakhsh	nourbakhsh	NOUN
aiti-8098	342	10	,	,	PUNCT
aiti-8098	342	11	p.	p.	PROPN
aiti-8098	342	12	raghavan	raghavan	PROPN
aiti-8098	342	13	,	,	PUNCT
aiti-8098	342	14	i.	i.	PROPN
aiti-8098	342	15	radu	radu	PROPN
aiti-8098	342	16	,	,	PUNCT
aiti-8098	342	17	s.	s.	PROPN
aiti-8098	342	18	de	de	PROPN
aiti-8098	342	19	gendt	gendt	PROPN
aiti-8098	342	20	,	,	PUNCT
aiti-8098	342	21	m.	m.	NOUN
aiti-8098	342	22	heyns	heyns	PROPN
aiti-8098	342	23	,	,	PUNCT
aiti-8098	342	24	et	et	PROPN
aiti-8098	342	25	al	al	PROPN
aiti-8098	342	26	.	.	PROPN
aiti-8098	342	27	,	,	PUNCT
aiti-8098	342	28	“	"	PUNCT
aiti-8098	342	29	bilayer	bilayer	NOUN
aiti-8098	342	30	graphene	graphene	NOUN
aiti-8098	342	31	tunneling	tunnel	VERB
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aiti-8098	342	33	for	for	ADP
aiti-8098	342	34	sub-0.2	sub-0.2	PROPN
aiti-8098	342	35	v	v	ADP
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aiti-8098	342	37	cmos	cmos	PROPN
aiti-8098	342	38	logic	logic	NOUN
aiti-8098	342	39	applications	application	NOUN
aiti-8098	342	40	,	,	PUNCT
aiti-8098	342	41	”	"	PUNCT
aiti-8098	342	42	ieee	ieee	NOUN
aiti-8098	342	43	electron	electron	NOUN
aiti-8098	342	44	device	device	NOUN
aiti-8098	342	45	letters	letter	NOUN
aiti-8098	342	46	,	,	PUNCT
aiti-8098	342	47	vol	vol	NOUN
aiti-8098	342	48	.	.	PROPN
aiti-8098	342	49	35	35	NUM
aiti-8098	342	50	,	,	PUNCT
aiti-8098	342	51	no	no	INTJ
aiti-8098	342	52	.	.	NOUN
aiti-8098	342	53	12	12	NUM
aiti-8098	342	54	,	,	PUNCT
aiti-8098	342	55	pp	pp	ADJ
aiti-8098	342	56	.	.	PUNCT
aiti-8098	343	1	1308	1308	NUM
aiti-8098	343	2	-	-	SYM
aiti-8098	343	3	1310	1310	NUM
aiti-8098	343	4	,	,	PUNCT
aiti-8098	343	5	december	december	PROPN
aiti-8098	343	6	2014	2014	NUM
aiti-8098	343	7	.	.	PUNCT
aiti-8098	344	1	[	[	X
aiti-8098	344	2	10	10	NUM
aiti-8098	344	3	]	]	X
aiti-8098	344	4	y.	y.	PROPN
aiti-8098	344	5	lv	lv	PROPN
aiti-8098	344	6	,	,	PUNCT
aiti-8098	344	7	w.	w.	PROPN
aiti-8098	344	8	qin	qin	PROPN
aiti-8098	344	9	,	,	PUNCT
aiti-8098	344	10	q.	q.	PROPN
aiti-8098	344	11	huang	huang	PROPN
aiti-8098	344	12	,	,	PUNCT
aiti-8098	344	13	s.	s.	PROPN
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aiti-8098	344	16	h.	h.	PROPN
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aiti-8098	344	18	,	,	PUNCT
aiti-8098	344	19	and	and	CCONJ
aiti-8098	344	20	j.	j.	PROPN
aiti-8098	344	21	he	he	PRON
aiti-8098	344	22	,	,	PUNCT
aiti-8098	344	23	“	"	PUNCT
aiti-8098	344	24	graphene	graphene	VERB
aiti-8098	344	25	nanoribbon	nanoribbon	NOUN
aiti-8098	344	26	tunnel	tunnel	NOUN
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aiti-8098	344	28	-	-	PUNCT
aiti-8098	344	29	effect	effect	NOUN
aiti-8098	344	30	transistor	transistor	NOUN
aiti-8098	344	31	via	via	ADP
aiti-8098	344	32	segmented	segment	VERB
aiti-8098	344	33	edge	edge	NOUN
aiti-8098	344	34	saturation	saturation	NOUN
aiti-8098	344	35	,	,	PUNCT
aiti-8098	344	36	”	"	PUNCT
aiti-8098	344	37	ieee	ieee	NOUN
aiti-8098	344	38	transactions	transaction	NOUN
aiti-8098	344	39	on	on	ADP
aiti-8098	344	40	electron	electron	NOUN
aiti-8098	344	41	devices	device	NOUN
aiti-8098	344	42	,	,	PUNCT
aiti-8098	344	43	vol	vol	NOUN
aiti-8098	344	44	.	.	PROPN
aiti-8098	344	45	64	64	NUM
aiti-8098	344	46	,	,	PUNCT
aiti-8098	344	47	no	no	INTJ
aiti-8098	344	48	.	.	NOUN
aiti-8098	344	49	6	6	NUM
aiti-8098	344	50	,	,	PUNCT
aiti-8098	344	51	pp	pp	ADJ
aiti-8098	344	52	.	.	PUNCT
aiti-8098	344	53	2694	2694	NUM
aiti-8098	344	54	-	-	SYM
aiti-8098	344	55	2701	2701	NUM
aiti-8098	344	56	,	,	PUNCT
aiti-8098	344	57	june	june	PROPN
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aiti-8098	344	59	.	.	PUNCT
aiti-8098	345	1	[	[	X
aiti-8098	345	2	11	11	NUM
aiti-8098	345	3	]	]	PUNCT
aiti-8098	345	4	a.	a.	NOUN
aiti-8098	345	5	rassekh	rassekh	NOUN
aiti-8098	345	6	and	and	CCONJ
aiti-8098	345	7	m.	m.	NOUN
aiti-8098	345	8	fathipour	fathipour	PROPN
aiti-8098	345	9	,	,	PUNCT
aiti-8098	345	10	“	"	PUNCT
aiti-8098	345	11	a	a	DET
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aiti-8098	345	13	-	-	PUNCT
aiti-8098	345	14	gate	gate	NOUN
aiti-8098	345	15	soi	soi	PROPN
aiti-8098	345	16	nanosheet	nanosheet	PROPN
aiti-8098	345	17	junctionless	junctionless	PROPN
aiti-8098	345	18	transistor	transistor	NOUN
aiti-8098	345	19	at	at	ADP
aiti-8098	345	20	10	10	NUM
aiti-8098	345	21	-	-	PUNCT
aiti-8098	345	22	nm	nm	ADJ
aiti-8098	345	23	gate	gate	NOUN
aiti-8098	345	24	length	length	NOUN
aiti-8098	345	25	:	:	PUNCT
aiti-8098	345	26	design	design	NOUN
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aiti-8098	345	28	and	and	CCONJ
aiti-8098	345	29	comparison	comparison	NOUN
aiti-8098	345	30	with	with	ADP
aiti-8098	345	31	the	the	DET
aiti-8098	345	32	conventional	conventional	ADJ
aiti-8098	345	33	soi	soi	ADJ
aiti-8098	345	34	finfet	finfet	NOUN
aiti-8098	345	35	,	,	PUNCT
aiti-8098	345	36	”	"	PUNCT
aiti-8098	345	37	journal	journal	NOUN
aiti-8098	345	38	of	of	ADP
aiti-8098	345	39	computational	computational	ADJ
aiti-8098	345	40	electronics	electronic	NOUN
aiti-8098	345	41	,	,	PUNCT
aiti-8098	345	42	vol	vol	NOUN
aiti-8098	345	43	.	.	PROPN
aiti-8098	345	44	19	19	NUM
aiti-8098	345	45	,	,	PUNCT
aiti-8098	345	46	no	no	INTJ
aiti-8098	345	47	.	.	NOUN
aiti-8098	345	48	2	2	NUM
aiti-8098	345	49	,	,	PUNCT
aiti-8098	345	50	pp	pp	ADJ
aiti-8098	345	51	.	.	PUNCT
aiti-8098	346	1	631	631	NUM
aiti-8098	346	2	-	-	SYM
aiti-8098	346	3	639	639	NUM
aiti-8098	346	4	,	,	PUNCT
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aiti-8098	346	7	.	.	PUNCT
aiti-8098	347	1	[	[	X
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aiti-8098	347	4	n.	n.	PROPN
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aiti-8098	347	8	,	,	PUNCT
aiti-8098	347	9	b.	b.	PROPN
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aiti-8098	347	11	,	,	PUNCT
aiti-8098	347	12	a.	a.	NOUN
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aiti-8098	347	14	,	,	PUNCT
aiti-8098	347	15	g.	g.	PROPN
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aiti-8098	347	17	,	,	PUNCT
aiti-8098	347	18	and	and	CCONJ
aiti-8098	347	19	s.	s.	PROPN
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aiti-8098	347	21	,	,	PUNCT
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aiti-8098	347	24	-	-	SYM
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aiti-8098	347	43	,	,	PUNCT
aiti-8098	347	44	”	"	PUNCT
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aiti-8098	347	46	on	on	ADP
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aiti-8098	347	48	and	and	CCONJ
aiti-8098	347	49	electronic	electronic	ADJ
aiti-8098	347	50	materials	material	NOUN
aiti-8098	347	51	,	,	PUNCT
aiti-8098	347	52	vol	vol	NOUN
aiti-8098	347	53	.	.	PROPN
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aiti-8098	347	55	,	,	PUNCT
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aiti-8098	347	57	.	.	NOUN
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aiti-8098	347	59	,	,	PUNCT
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aiti-8098	348	1	156	156	NUM
aiti-8098	348	2	-	-	SYM
aiti-8098	348	3	161	161	NUM
aiti-8098	348	4	,	,	PUNCT
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aiti-8098	349	4	j.	j.	PROPN
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aiti-8098	349	14	and	and	CCONJ
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aiti-8098	349	18	“	"	PUNCT
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aiti-8098	349	39	,	,	PUNCT
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aiti-8098	349	45	-	-	PUNCT
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aiti-8098	349	49	nanostructures	nanostructure	NOUN
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aiti-8098	349	56	.	.	PUNCT
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aiti-8098	350	2	-	-	SYM
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aiti-8098	350	7	.	.	PUNCT
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aiti-8098	351	18	,	,	PUNCT
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aiti-8098	351	20	wang	wang	PROPN
aiti-8098	351	21	,	,	PUNCT
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aiti-8098	351	24	.	.	PROPN
aiti-8098	351	25	,	,	PUNCT
aiti-8098	351	26	“	"	PUNCT
aiti-8098	351	27	flexible	flexible	ADJ
aiti-8098	351	28	field	field	NOUN
aiti-8098	351	29	-	-	PUNCT
aiti-8098	351	30	effect	effect	NOUN
aiti-8098	351	31	transistors	transistor	NOUN
aiti-8098	351	32	with	with	ADP
aiti-8098	351	33	a	a	DET
aiti-8098	351	34	high	high	ADJ
aiti-8098	351	35	on	on	ADP
aiti-8098	351	36	/	/	SYM
aiti-8098	351	37	off	off	ADP
aiti-8098	351	38	current	current	ADJ
aiti-8098	351	39	ratio	ratio	NOUN
aiti-8098	351	40	based	base	VERB
aiti-8098	351	41	on	on	ADP
aiti-8098	351	42	large	large	ADJ
aiti-8098	351	43	-	-	PUNCT
aiti-8098	351	44	area	area	NOUN
aiti-8098	351	45	single	single	ADJ
aiti-8098	351	46	-	-	PUNCT
aiti-8098	351	47	crystal	crystal	NOUN
aiti-8098	351	48	graphene	graphene	NOUN
aiti-8098	351	49	,	,	PUNCT
aiti-8098	351	50	”	"	PUNCT
aiti-8098	351	51	carbon	carbon	NOUN
aiti-8098	351	52	,	,	PUNCT
aiti-8098	351	53	vol	vol	NOUN
aiti-8098	351	54	.	.	PROPN
aiti-8098	351	55	163	163	NUM
aiti-8098	351	56	,	,	PUNCT
aiti-8098	351	57	pp	pp	ADJ
aiti-8098	351	58	.	.	PUNCT
aiti-8098	352	1	417	417	NUM
aiti-8098	352	2	-	-	SYM
aiti-8098	352	3	424	424	NUM
aiti-8098	352	4	,	,	PUNCT
aiti-8098	352	5	august	august	PROPN
aiti-8098	352	6	2020	2020	NUM
aiti-8098	352	7	.	.	PUNCT
aiti-8098	353	1	[	[	X
aiti-8098	353	2	15	15	NUM
aiti-8098	353	3	]	]	PUNCT
aiti-8098	353	4	z.	z.	PROPN
aiti-8098	353	5	he	he	PRON
aiti-8098	353	6	,	,	PUNCT
aiti-8098	353	7	c.	c.	PROPN
aiti-8098	353	8	yu	yu	PROPN
aiti-8098	353	9	,	,	PUNCT
aiti-8098	353	10	q.	q.	PROPN
aiti-8098	353	11	liu	liu	PROPN
aiti-8098	353	12	,	,	PUNCT
aiti-8098	353	13	x.	x.	NOUN
aiti-8098	353	14	song	song	PROPN
aiti-8098	353	15	,	,	PUNCT
aiti-8098	353	16	x.	x.	PROPN
aiti-8098	353	17	gao	gao	PROPN
aiti-8098	353	18	,	,	PUNCT
aiti-8098	353	19	j.	j.	PROPN
aiti-8098	353	20	guo	guo	PROPN
aiti-8098	353	21	,	,	PUNCT
aiti-8098	353	22	et	et	PROPN
aiti-8098	353	23	al	al	PROPN
aiti-8098	353	24	.	.	PROPN
aiti-8098	353	25	,	,	PUNCT
aiti-8098	353	26	“	"	PUNCT
aiti-8098	353	27	high	high	ADJ
aiti-8098	353	28	temperature	temperature	NOUN
aiti-8098	353	29	rf	rf	NOUN
aiti-8098	353	30	performances	performance	NOUN
aiti-8098	353	31	of	of	ADP
aiti-8098	353	32	epitaxial	epitaxial	ADJ
aiti-8098	353	33	bilayer	bilayer	NOUN
aiti-8098	353	34	graphene	graphene	VERB
aiti-8098	353	35	field	field	NOUN
aiti-8098	353	36	-	-	PUNCT
aiti-8098	353	37	effect	effect	NOUN
aiti-8098	353	38	transistors	transistor	NOUN
aiti-8098	353	39	on	on	ADP
aiti-8098	353	40	sic	sic	ADJ
aiti-8098	353	41	substrate	substrate	NOUN
aiti-8098	353	42	,	,	PUNCT
aiti-8098	353	43	”	"	PUNCT
aiti-8098	353	44	carbon	carbon	NOUN
aiti-8098	353	45	,	,	PUNCT
aiti-8098	353	46	vol	vol	NOUN
aiti-8098	353	47	.	.	NOUN
aiti-8098	353	48	164	164	NUM
aiti-8098	353	49	,	,	PUNCT
aiti-8098	353	50	pp	pp	ADJ
aiti-8098	353	51	.	.	PUNCT
aiti-8098	354	1	435	435	NUM
aiti-8098	354	2	-	-	SYM
aiti-8098	354	3	441	441	NUM
aiti-8098	354	4	,	,	PUNCT
aiti-8098	354	5	august	august	PROPN
aiti-8098	354	6	2020	2020	NUM
aiti-8098	354	7	.	.	PUNCT
aiti-8098	355	1	[	[	X
aiti-8098	355	2	16	16	NUM
aiti-8098	355	3	]	]	PUNCT
aiti-8098	355	4	k.	k.	PROPN
aiti-8098	355	5	tamersit	tamersit	PROPN
aiti-8098	355	6	and	and	CCONJ
aiti-8098	355	7	f.	f.	PROPN
aiti-8098	355	8	djeffal	djeffal	PROPN
aiti-8098	355	9	,	,	PUNCT
aiti-8098	355	10	“	"	PUNCT
aiti-8098	355	11	boosting	boost	VERB
aiti-8098	355	12	the	the	DET
aiti-8098	355	13	performance	performance	NOUN
aiti-8098	355	14	of	of	ADP
aiti-8098	355	15	a	a	DET
aiti-8098	355	16	nanoscale	nanoscale	NOUN
aiti-8098	355	17	graphene	graphene	NOUN
aiti-8098	355	18	nanoribbon	nanoribbon	NOUN
aiti-8098	355	19	field	field	NOUN
aiti-8098	355	20	-	-	PUNCT
aiti-8098	355	21	effect	effect	NOUN
aiti-8098	355	22	transistor	transistor	NOUN
aiti-8098	355	23	using	use	VERB
aiti-8098	355	24	graded	grade	VERB
aiti-8098	355	25	gate	gate	PROPN
aiti-8098	355	26	engineering	engineering	NOUN
aiti-8098	355	27	,	,	PUNCT
aiti-8098	355	28	”	"	PUNCT
aiti-8098	355	29	journal	journal	NOUN
aiti-8098	355	30	of	of	ADP
aiti-8098	355	31	computational	computational	ADJ
aiti-8098	355	32	electronics	electronic	NOUN
aiti-8098	355	33	,	,	PUNCT
aiti-8098	355	34	vol	vol	NOUN
aiti-8098	355	35	.	.	PROPN
aiti-8098	355	36	17	17	NUM
aiti-8098	355	37	,	,	PUNCT
aiti-8098	355	38	no	no	INTJ
aiti-8098	355	39	.	.	NOUN
aiti-8098	355	40	3	3	NUM
aiti-8098	355	41	,	,	PUNCT
aiti-8098	355	42	pp	pp	ADJ
aiti-8098	355	43	.	.	PUNCT
aiti-8098	355	44	1276	1276	NUM
aiti-8098	355	45	-	-	SYM
aiti-8098	355	46	1284	1284	NUM
aiti-8098	355	47	,	,	PUNCT
aiti-8098	355	48	september	september	PROPN
aiti-8098	355	49	2018	2018	NUM
aiti-8098	355	50	.	.	PUNCT
aiti-8098	356	1	[	[	X
aiti-8098	356	2	17	17	NUM
aiti-8098	356	3	]	]	PUNCT
aiti-8098	356	4	k.	k.	PROPN
aiti-8098	356	5	tamersit	tamersit	PROPN
aiti-8098	356	6	,	,	PUNCT
aiti-8098	356	7	“	"	PUNCT
aiti-8098	356	8	a	a	DET
aiti-8098	356	9	computational	computational	ADJ
aiti-8098	356	10	study	study	NOUN
aiti-8098	356	11	of	of	ADP
aiti-8098	356	12	short	short	ADJ
aiti-8098	356	13	-	-	PUNCT
aiti-8098	356	14	channel	channel	NOUN
aiti-8098	356	15	effects	effect	NOUN
aiti-8098	356	16	in	in	ADP
aiti-8098	356	17	double	double	ADJ
aiti-8098	356	18	-	-	PUNCT
aiti-8098	356	19	gate	gate	NOUN
aiti-8098	356	20	junctionless	junctionless	NOUN
aiti-8098	356	21	graphene	graphene	VERB
aiti-8098	356	22	nanoribbon	nanoribbon	NOUN
aiti-8098	356	23	field	field	NOUN
aiti-8098	356	24	-	-	PUNCT
aiti-8098	356	25	effect	effect	NOUN
aiti-8098	356	26	transistors	transistor	NOUN
aiti-8098	356	27	,	,	PUNCT
aiti-8098	356	28	”	"	PUNCT
aiti-8098	356	29	journal	journal	NOUN
aiti-8098	356	30	of	of	ADP
aiti-8098	356	31	computational	computational	ADJ
aiti-8098	356	32	electronics	electronic	NOUN
aiti-8098	356	33	,	,	PUNCT
aiti-8098	356	34	vol	vol	NOUN
aiti-8098	356	35	.	.	PROPN
aiti-8098	357	1	18	18	NUM
aiti-8098	357	2	,	,	PUNCT
aiti-8098	357	3	no	no	INTJ
aiti-8098	357	4	.	.	NOUN
aiti-8098	357	5	4	4	NUM
aiti-8098	357	6	,	,	PUNCT
aiti-8098	357	7	pp	pp	ADJ
aiti-8098	357	8	.	.	PUNCT
aiti-8098	358	1	1214	1214	NUM
aiti-8098	358	2	-	-	SYM
aiti-8098	358	3	1221	1221	NUM
aiti-8098	358	4	,	,	PUNCT
aiti-8098	358	5	december	december	PROPN
aiti-8098	358	6	2019	2019	NUM
aiti-8098	358	7	.	.	PUNCT
aiti-8098	359	1	[	[	X
aiti-8098	359	2	18	18	NUM
aiti-8098	359	3	]	]	X
aiti-8098	359	4	t.	t.	PROPN
aiti-8098	359	5	radsar	radsar	PROPN
aiti-8098	359	6	,	,	PUNCT
aiti-8098	359	7	h.	h.	PROPN
aiti-8098	359	8	khalesi	khalesi	PROPN
aiti-8098	359	9	,	,	PUNCT
aiti-8098	359	10	and	and	CCONJ
aiti-8098	359	11	v.	v.	ADP
aiti-8098	359	12	ghods	ghod	NOUN
aiti-8098	359	13	,	,	PUNCT
aiti-8098	359	14	“	"	PUNCT
aiti-8098	359	15	improving	improve	VERB
aiti-8098	359	16	the	the	DET
aiti-8098	359	17	performance	performance	NOUN
aiti-8098	359	18	of	of	ADP
aiti-8098	359	19	graphene	graphene	ADJ
aiti-8098	359	20	nanoribbon	nanoribbon	NOUN
aiti-8098	359	21	field	field	NOUN
aiti-8098	359	22	-	-	PUNCT
aiti-8098	359	23	effect	effect	NOUN
aiti-8098	359	24	transistors	transistor	NOUN
aiti-8098	359	25	by	by	ADP
aiti-8098	359	26	using	use	VERB
aiti-8098	359	27	lanthanum	lanthanum	ADJ
aiti-8098	359	28	aluminate	aluminate	NOUN
aiti-8098	359	29	as	as	ADP
aiti-8098	359	30	the	the	DET
aiti-8098	359	31	gate	gate	NOUN
aiti-8098	359	32	dielectric	dielectric	NOUN
aiti-8098	359	33	,	,	PUNCT
aiti-8098	359	34	”	"	PUNCT
aiti-8098	359	35	journal	journal	NOUN
aiti-8098	359	36	of	of	ADP
aiti-8098	359	37	computational	computational	ADJ
aiti-8098	359	38	electronics	electronic	NOUN
aiti-8098	359	39	,	,	PUNCT
aiti-8098	359	40	vol	vol	NOUN
aiti-8098	359	41	.	.	PROPN
aiti-8098	359	42	19	19	NUM
aiti-8098	359	43	,	,	PUNCT
aiti-8098	359	44	no	no	INTJ
aiti-8098	359	45	.	.	NOUN
aiti-8098	359	46	4	4	NUM
aiti-8098	359	47	,	,	PUNCT
aiti-8098	359	48	pp	pp	ADJ
aiti-8098	359	49	.	.	PUNCT
aiti-8098	360	1	1507	1507	NUM
aiti-8098	360	2	-	-	SYM
aiti-8098	360	3	1515	1515	NUM
aiti-8098	360	4	,	,	PUNCT
aiti-8098	360	5	december	december	PROPN
aiti-8098	360	6	2020	2020	NUM
aiti-8098	360	7	.	.	PUNCT
aiti-8098	361	1	[	[	X
aiti-8098	361	2	19	19	NUM
aiti-8098	361	3	]	]	PUNCT
aiti-8098	361	4	m.	m.	PROPN
aiti-8098	361	5	s.	s.	PROPN
aiti-8098	361	6	fahad	fahad	PROPN
aiti-8098	361	7	,	,	PUNCT
aiti-8098	361	8	a.	a.	PROPN
aiti-8098	361	9	srivastava	srivastava	PROPN
aiti-8098	361	10	,	,	PUNCT
aiti-8098	361	11	a.	a.	PROPN
aiti-8098	361	12	k.	k.	PROPN
aiti-8098	361	13	sharma	sharma	PROPN
aiti-8098	361	14	,	,	PUNCT
aiti-8098	361	15	and	and	CCONJ
aiti-8098	361	16	c.	c.	PROPN
aiti-8098	361	17	mayberry	mayberry	PROPN
aiti-8098	361	18	,	,	PUNCT
aiti-8098	361	19	“	"	PUNCT
aiti-8098	361	20	analytical	analytical	ADJ
aiti-8098	361	21	current	current	ADJ
aiti-8098	361	22	transport	transport	NOUN
aiti-8098	361	23	modeling	modeling	NOUN
aiti-8098	361	24	of	of	ADP
aiti-8098	361	25	graphene	graphene	ADJ
aiti-8098	361	26	nanoribbon	nanoribbon	NOUN
aiti-8098	361	27	tunnel	tunnel	NOUN
aiti-8098	361	28	field	field	NOUN
aiti-8098	361	29	-	-	PUNCT
aiti-8098	361	30	effect	effect	NOUN
aiti-8098	361	31	transistors	transistor	NOUN
aiti-8098	361	32	for	for	ADP
aiti-8098	361	33	digital	digital	ADJ
aiti-8098	361	34	circuit	circuit	NOUN
aiti-8098	361	35	design	design	NOUN
aiti-8098	361	36	,	,	PUNCT
aiti-8098	361	37	”	"	PUNCT
aiti-8098	361	38	ieee	ieee	NOUN
aiti-8098	361	39	transactions	transaction	NOUN
aiti-8098	361	40	on	on	ADP
aiti-8098	361	41	nanotechnology	nanotechnology	NOUN
aiti-8098	361	42	,	,	PUNCT
aiti-8098	361	43	vol	vol	NOUN
aiti-8098	361	44	.	.	PROPN
aiti-8098	361	45	15	15	NUM
aiti-8098	361	46	,	,	PUNCT
aiti-8098	361	47	no	no	INTJ
aiti-8098	361	48	.	.	NOUN
aiti-8098	361	49	1	1	NUM
aiti-8098	361	50	,	,	PUNCT
aiti-8098	361	51	pp	pp	ADJ
aiti-8098	361	52	.	.	PUNCT
aiti-8098	362	1	39	39	NUM
aiti-8098	362	2	-	-	SYM
aiti-8098	362	3	50	50	NUM
aiti-8098	362	4	,	,	PUNCT
aiti-8098	362	5	january	january	PROPN
aiti-8098	362	6	2016	2016	NUM
aiti-8098	362	7	.	.	PUNCT
aiti-8098	363	1	[	[	X
aiti-8098	363	2	20	20	NUM
aiti-8098	363	3	]	]	PUNCT
aiti-8098	363	4	f.	f.	PROPN
aiti-8098	363	5	djeffal	djeffal	PROPN
aiti-8098	363	6	,	,	PUNCT
aiti-8098	363	7	t.	t.	NOUN
aiti-8098	363	8	bentrcia	bentrcia	PROPN
aiti-8098	363	9	,	,	PUNCT
aiti-8098	363	10	m.	m.	NOUN
aiti-8098	363	11	a.	a.	PROPN
aiti-8098	363	12	abdi	abdi	PROPN
aiti-8098	363	13	,	,	PUNCT
aiti-8098	363	14	and	and	CCONJ
aiti-8098	363	15	t.	t.	PROPN
aiti-8098	363	16	bendib	bendib	NOUN
aiti-8098	363	17	,	,	PUNCT
aiti-8098	363	18	“	"	PUNCT
aiti-8098	363	19	drain	drain	VERB
aiti-8098	363	20	current	current	ADJ
aiti-8098	363	21	model	model	NOUN
aiti-8098	363	22	for	for	ADP
aiti-8098	363	23	undoped	undoped	ADJ
aiti-8098	363	24	gate	gate	PROPN
aiti-8098	363	25	stack	stack	PROPN
aiti-8098	363	26	double	double	PROPN
aiti-8098	363	27	gate	gate	NOUN
aiti-8098	363	28	(	(	PUNCT
aiti-8098	363	29	gsdg	gsdg	NOUN
aiti-8098	363	30	)	)	PUNCT
aiti-8098	363	31	mosfets	mosfet	NOUN
aiti-8098	363	32	including	include	VERB
aiti-8098	363	33	the	the	DET
aiti-8098	363	34	hot	hot	ADJ
aiti-8098	363	35	-	-	PUNCT
aiti-8098	363	36	carrier	carrier	NOUN
aiti-8098	363	37	degradation	degradation	NOUN
aiti-8098	363	38	effects	effect	NOUN
aiti-8098	363	39	,	,	PUNCT
aiti-8098	363	40	”	"	PUNCT
aiti-8098	363	41	microelectronics	microelectronic	NOUN
aiti-8098	363	42	reliability	reliability	NOUN
aiti-8098	363	43	,	,	PUNCT
aiti-8098	363	44	vol	vol	NOUN
aiti-8098	363	45	.	.	PROPN
aiti-8098	364	1	51	51	NUM
aiti-8098	364	2	,	,	PUNCT
aiti-8098	364	3	no	no	INTJ
aiti-8098	364	4	.	.	NOUN
aiti-8098	364	5	3	3	NUM
aiti-8098	364	6	,	,	PUNCT
aiti-8098	364	7	pp	pp	ADJ
aiti-8098	364	8	.	.	PUNCT
aiti-8098	365	1	550	550	NUM
aiti-8098	365	2	-	-	SYM
aiti-8098	365	3	555	555	NUM
aiti-8098	365	4	,	,	PUNCT
aiti-8098	365	5	march	march	PROPN
aiti-8098	365	6	2011	2011	NUM
aiti-8098	365	7	.	.	PUNCT
aiti-8098	366	1	[	[	X
aiti-8098	366	2	21	21	NUM
aiti-8098	366	3	]	]	PUNCT
aiti-8098	366	4	m.	m.	NOUN
aiti-8098	366	5	a.	a.	PROPN
aiti-8098	366	6	abdi	abdi	PROPN
aiti-8098	366	7	,	,	PUNCT
aiti-8098	366	8	f.	f.	PROPN
aiti-8098	366	9	djeffal	djeffal	PROPN
aiti-8098	366	10	,	,	PUNCT
aiti-8098	366	11	z.	z.	PROPN
aiti-8098	366	12	dibi	dibi	NOUN
aiti-8098	366	13	,	,	PUNCT
aiti-8098	366	14	and	and	CCONJ
aiti-8098	366	15	d.	d.	PROPN
aiti-8098	366	16	arar	arar	PROPN
aiti-8098	366	17	,	,	PUNCT
aiti-8098	366	18	“	"	PUNCT
aiti-8098	366	19	a	a	DET
aiti-8098	366	20	two	two	NUM
aiti-8098	366	21	-	-	PUNCT
aiti-8098	366	22	dimensional	dimensional	ADJ
aiti-8098	366	23	analytical	analytical	ADJ
aiti-8098	366	24	subthreshold	subthreshold	ADJ
aiti-8098	366	25	behavior	behavior	NOUN
aiti-8098	366	26	analysis	analysis	NOUN
aiti-8098	366	27	including	include	VERB
aiti-8098	366	28	hot	hot	ADJ
aiti-8098	366	29	-	-	PUNCT
aiti-8098	366	30	carrier	carrier	NOUN
aiti-8098	366	31	effect	effect	NOUN
aiti-8098	366	32	for	for	ADP
aiti-8098	366	33	nanoscale	nanoscale	NOUN
aiti-8098	366	34	gate	gate	PROPN
aiti-8098	366	35	stack	stack	NOUN
aiti-8098	366	36	gate	gate	NOUN
aiti-8098	366	37	all	all	ADV
aiti-8098	366	38	around	around	ADV
aiti-8098	366	39	(	(	PUNCT
aiti-8098	366	40	gasgaa	gasgaa	PROPN
aiti-8098	366	41	)	)	PUNCT
aiti-8098	366	42	mosfets	mosfet	NOUN
aiti-8098	366	43	,	,	PUNCT
aiti-8098	366	44	”	"	PUNCT
aiti-8098	366	45	journal	journal	NOUN
aiti-8098	366	46	of	of	ADP
aiti-8098	366	47	computational	computational	ADJ
aiti-8098	366	48	electronics	electronic	NOUN
aiti-8098	366	49	,	,	PUNCT
aiti-8098	366	50	vol	vol	NOUN
aiti-8098	366	51	.	.	PROPN
aiti-8098	367	1	10	10	NUM
aiti-8098	367	2	,	,	PUNCT
aiti-8098	367	3	no	no	INTJ
aiti-8098	367	4	.	.	NOUN
aiti-8098	368	1	1	1	NUM
aiti-8098	368	2	-	-	SYM
aiti-8098	368	3	2	2	NUM
aiti-8098	368	4	,	,	PUNCT
aiti-8098	368	5	pp	pp	ADJ
aiti-8098	368	6	.	.	PUNCT
aiti-8098	369	1	179	179	NUM
aiti-8098	369	2	-	-	SYM
aiti-8098	369	3	185	185	NUM
aiti-8098	369	4	,	,	PUNCT
aiti-8098	369	5	june	june	PROPN
aiti-8098	369	6	2011	2011	NUM
aiti-8098	369	7	.	.	PUNCT
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aiti-8098	370	2	22	22	NUM
aiti-8098	370	3	]	]	PUNCT
aiti-8098	370	4	x.	x.	PROPN
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aiti-8098	370	6	,	,	PUNCT
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aiti-8098	370	9	,	,	PUNCT
aiti-8098	370	10	j.	j.	PROPN
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aiti-8098	370	14	y.	y.	PROPN
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aiti-8098	370	17	“	"	PUNCT
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aiti-8098	370	21	properties	property	NOUN
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aiti-8098	370	27	-	-	PUNCT
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aiti-8098	370	30	,	,	PUNCT
aiti-8098	370	31	”	"	PUNCT
aiti-8098	370	32	nanoscale	nanoscale	NOUN
aiti-8098	370	33	research	research	NOUN
aiti-8098	370	34	letters	letter	NOUN
aiti-8098	370	35	,	,	PUNCT
aiti-8098	370	36	vol	vol	NOUN
aiti-8098	370	37	.	.	PROPN
aiti-8098	370	38	7	7	NUM
aiti-8098	370	39	,	,	PUNCT
aiti-8098	370	40	no	no	INTJ
aiti-8098	370	41	.	.	NOUN
aiti-8098	370	42	1	1	NUM
aiti-8098	370	43	,	,	PUNCT
aiti-8098	370	44	677	677	NUM
aiti-8098	370	45	,	,	PUNCT
aiti-8098	370	46	december	december	PROPN
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aiti-8098	370	48	.	.	PUNCT
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aiti-8098	371	2	23	23	NUM
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aiti-8098	371	9	moezi	moezi	PROPN
aiti-8098	371	10	,	,	PUNCT
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aiti-8098	371	21	graphene	graphene	NOUN
aiti-8098	371	22	tunneling	tunneling	NOUN
aiti-8098	371	23	field	field	NOUN
aiti-8098	371	24	effect	effect	NOUN
aiti-8098	371	25	transistor	transistor	NOUN
aiti-8098	371	26	(	(	PUNCT
aiti-8098	371	27	gtfet	gtfet	NOUN
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aiti-8098	371	36	microstructures	microstructure	NOUN
aiti-8098	371	37	,	,	PUNCT
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aiti-8098	371	39	.	.	PROPN
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aiti-8098	371	41	,	,	PUNCT
aiti-8098	371	42	pp	pp	ADJ
aiti-8098	371	43	.	.	PUNCT
aiti-8098	371	44	1221	1221	NUM
aiti-8098	371	45	-	-	SYM
aiti-8098	371	46	1229	1229	NUM
aiti-8098	371	47	,	,	PUNCT
aiti-8098	371	48	december	december	PROPN
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aiti-8098	371	50	.	.	PUNCT
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aiti-8098	372	2	24	24	NUM
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aiti-8098	372	4	y.	y.	PROPN
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aiti-8098	372	26	“	"	PUNCT
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aiti-8098	372	29	design	design	NOUN
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aiti-8098	372	31	graphene	graphene	ADJ
aiti-8098	372	32	gaas	gaas	PROPN
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aiti-8098	372	41	matter	matter	NOUN
aiti-8098	372	42	of	of	ADP
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aiti-8098	372	44	,	,	PUNCT
aiti-8098	372	45	vol	vol	NOUN
aiti-8098	372	46	.	.	PROPN
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aiti-8098	372	48	,	,	PUNCT
aiti-8098	372	49	326384	326384	NUM
aiti-8098	372	50	,	,	PUNCT
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aiti-8098	372	52	.	.	PUNCT
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aiti-8098	373	6	,	,	PUNCT
aiti-8098	373	7	“	"	PUNCT
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aiti-8098	373	11	manual	manual	NOUN
aiti-8098	373	12	,	,	PUNCT
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aiti-8098	373	16	,	,	PUNCT
aiti-8098	373	17	volume	volume	NOUN
aiti-8098	373	18	i	i	PRON
aiti-8098	373	19	,	,	PUNCT
aiti-8098	373	20	”	"	PUNCT
aiti-8098	373	21	http://statistics.roma2.infn.it/~messi/sic/sic_21-01-04/atlas98-v1_users.pdf	http://statistics.roma2.infn.it/~messi/sic/sic_21-01-04/atlas98-v1_users.pdf	PROPN
aiti-8098	373	22	,	,	PUNCT
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aiti-8098	373	25	.	.	PUNCT
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aiti-8098	374	2	26	26	NUM
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aiti-8098	374	20	iot	iot	PROPN
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aiti-8098	374	22	,	,	PUNCT
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aiti-8098	375	1	1	1	NUM
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aiti-8098	375	3	3	3	NUM
aiti-8098	375	4	,	,	PUNCT
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aiti-8098	375	7	.	.	PUNCT
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aiti-8098	376	28	,	,	PUNCT
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aiti-8098	376	34	vol	vol	NOUN
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aiti-8098	376	37	,	,	PUNCT
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aiti-8098	376	41	,	,	PUNCT
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aiti-8098	376	43	,	,	PUNCT
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aiti-8098	376	46	.	.	PUNCT
aiti-8098	377	1	[	[	X
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aiti-8098	377	36	,	,	PUNCT
aiti-8098	377	37	vol	vol	NOUN
aiti-8098	377	38	.	.	PROPN
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aiti-8098	377	40	,	,	PUNCT
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aiti-8098	377	42	.	.	NOUN
aiti-8098	377	43	2	2	NUM
aiti-8098	377	44	,	,	PUNCT
aiti-8098	377	45	pp	pp	ADJ
aiti-8098	377	46	.	.	PUNCT
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aiti-8098	381	20	cc	cc	NOUN
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aiti-8098	381	22	-	-	PUNCT
aiti-8098	381	23	nc	nc	NOUN
aiti-8098	381	24	)	)	PUNCT
aiti-8098	381	25	license	license	NOUN
aiti-8098	381	26	(	(	PUNCT
aiti-8098	381	27	https://creativecommons.org/licenses/by-nc/4.0/	https://creativecommons.org/licenses/by-nc/4.0/	NOUN
aiti-8098	381	28	)	)	PUNCT
aiti-8098	381	29	.	.	PUNCT
aiti-8098	382	1	29	29	NUM