id	sid	tid	token	lemma	pos
ajtas-2341	1	1	american	american	PROPN
ajtas-2341	1	2	journal	journal	PROPN
ajtas-2341	1	3	of	of	ADP
ajtas-2341	1	4	technology	technology	NOUN
ajtas-2341	1	5	and	and	CCONJ
ajtas-2341	1	6	applied	apply	VERB
ajtas-2341	1	7	sciences	sciences	PROPN
ajtas-2341	1	8	issn	issn	X
ajtas-2341	1	9	(	(	PUNCT
ajtas-2341	1	10	e	e	NOUN
ajtas-2341	1	11	):	):	PUNCT
ajtas-2341	1	12	2832	2832	NUM
ajtas-2341	1	13	-	-	SYM
ajtas-2341	1	14	1766	1766	NUM
ajtas-2341	1	15	volume	volume	NOUN
ajtas-2341	1	16	28	28	NUM
ajtas-2341	1	17	,	,	PUNCT
ajtas-2341	1	18	september	september	PROPN
ajtas-2341	1	19	2024	2024	NUM
ajtas-2341	1	20	p	p	NOUN
ajtas-2341	1	21	a	a	PRON
ajtas-2341	1	22	g	g	NOUN
ajtas-2341	1	23	e	e	NOUN
ajtas-2341	1	24	|	|	ADV
ajtas-2341	1	25	22	22	NUM
ajtas-2341	1	26	www.americanjournal.org	www.americanjournal.org	NOUN
ajtas-2341	1	27	advances	advance	NOUN
ajtas-2341	1	28	in	in	ADP
ajtas-2341	1	29	fabrication	fabrication	NOUN
ajtas-2341	1	30	techniques	technique	NOUN
ajtas-2341	1	31	of	of	ADP
ajtas-2341	1	32	epitaxial	epitaxial	ADJ
ajtas-2341	1	33	silicon	silicon	NOUN
ajtas-2341	1	34	p	p	PROPN
ajtas-2341	1	35	-	-	PUNCT
ajtas-2341	1	36	n	n	NOUN
ajtas-2341	1	37	structures	structure	NOUN
ajtas-2341	1	38	for	for	ADP
ajtas-2341	1	39	thermoelectric	thermoelectric	ADJ
ajtas-2341	1	40	applications	application	NOUN
ajtas-2341	1	41	f.	f.	PROPN
ajtas-2341	1	42	arzikulov	arzikulov	PROPN
ajtas-2341	1	43	assistant	assistant	PROPN
ajtas-2341	1	44	of	of	ADP
ajtas-2341	1	45	biomedical	biomedical	ADJ
ajtas-2341	1	46	engineering	engineering	NOUN
ajtas-2341	1	47	informatics	informatic	NOUN
ajtas-2341	1	48	,	,	PUNCT
ajtas-2341	1	49	biophysics	biophysic	NOUN
ajtas-2341	1	50	department	department	NOUN
ajtas-2341	1	51	tashkent	tashkent	PROPN
ajtas-2341	1	52	medical	medical	PROPN
ajtas-2341	1	53	academy	academy	PROPN
ajtas-2341	1	54	,	,	PUNCT
ajtas-2341	1	55	tashkent	tashkent	PROPN
ajtas-2341	1	56	uzbekistan	uzbekistan	PROPN
ajtas-2341	1	57	sh	sh	PROPN
ajtas-2341	1	58	.	.	PROPN
ajtas-2341	1	59	kuchkanov	kuchkanov	PROPN
ajtas-2341	1	60	associate	associate	PROPN
ajtas-2341	1	61	professor	professor	NOUN
ajtas-2341	1	62	of	of	ADP
ajtas-2341	1	63	the	the	DET
ajtas-2341	1	64	department	department	NOUN
ajtas-2341	1	65	of	of	ADP
ajtas-2341	1	66	alternative	alternative	ADJ
ajtas-2341	1	67	energy	energy	NOUN
ajtas-2341	1	68	sources	source	NOUN
ajtas-2341	1	69	(	(	PUNCT
ajtas-2341	1	70	phd	phd	NOUN
ajtas-2341	1	71	)	)	PUNCT
ajtas-2341	1	72	,	,	PUNCT
ajtas-2341	1	73	tashkent	tashkent	PROPN
ajtas-2341	1	74	state	state	PROPN
ajtas-2341	1	75	technical	technical	PROPN
ajtas-2341	1	76	university	university	NOUN
ajtas-2341	1	77	named	name	VERB
ajtas-2341	1	78	after	after	ADP
ajtas-2341	1	79	islam	islam	PROPN
ajtas-2341	1	80	karimov	karimov	PROPN
ajtas-2341	1	81	,	,	PUNCT
ajtas-2341	1	82	tashkent	tashkent	PROPN
ajtas-2341	1	83	uzbekistan	uzbekistan	PROPN
ajtas-2341	1	84	.	.	PUNCT
ajtas-2341	2	1	a	a	DET
ajtas-2341	2	2	b	b	PROPN
ajtas-2341	2	3	s	s	ADP
ajtas-2341	2	4	t	t	PROPN
ajtas-2341	2	5	r	r	NOUN
ajtas-2341	2	6	a	a	DET
ajtas-2341	2	7	c	c	NOUN
ajtas-2341	2	8	t	t	NOUN
ajtas-2341	2	9	k	k	X
ajtas-2341	2	10	e	e	PROPN
ajtas-2341	2	11	y	y	PROPN
ajtas-2341	2	12	w	w	NOUN
ajtas-2341	2	13	o	o	NOUN
ajtas-2341	2	14	r	r	NOUN
ajtas-2341	2	15	d	d	X
ajtas-2341	2	16	s	s	VERB
ajtas-2341	2	17	this	this	DET
ajtas-2341	2	18	article	article	NOUN
ajtas-2341	2	19	explores	explore	VERB
ajtas-2341	2	20	recent	recent	ADJ
ajtas-2341	2	21	advances	advance	NOUN
ajtas-2341	2	22	in	in	ADP
ajtas-2341	2	23	fabrication	fabrication	NOUN
ajtas-2341	2	24	techniques	technique	NOUN
ajtas-2341	2	25	for	for	ADP
ajtas-2341	2	26	silicon	silicon	NOUN
ajtas-2341	2	27	-	-	PUNCT
ajtas-2341	2	28	based	base	VERB
ajtas-2341	2	29	epitaxial	epitaxial	ADJ
ajtas-2341	2	30	p	p	NOUN
ajtas-2341	2	31	-	-	PUNCT
ajtas-2341	2	32	n	n	NOUN
ajtas-2341	2	33	junctions	junction	NOUN
ajtas-2341	2	34	,	,	PUNCT
ajtas-2341	2	35	focusing	focus	VERB
ajtas-2341	2	36	on	on	ADP
ajtas-2341	2	37	the	the	DET
ajtas-2341	2	38	role	role	NOUN
ajtas-2341	2	39	of	of	ADP
ajtas-2341	2	40	molecular	molecular	ADJ
ajtas-2341	2	41	beam	beam	NOUN
ajtas-2341	2	42	epitaxy	epitaxy	NOUN
ajtas-2341	2	43	(	(	PUNCT
ajtas-2341	2	44	mbe	mbe	PROPN
ajtas-2341	2	45	)	)	PUNCT
ajtas-2341	2	46	,	,	PUNCT
ajtas-2341	2	47	chemical	chemical	NOUN
ajtas-2341	2	48	vapor	vapor	NOUN
ajtas-2341	2	49	deposition	deposition	NOUN
ajtas-2341	2	50	(	(	PUNCT
ajtas-2341	2	51	cvd	cvd	PROPN
ajtas-2341	2	52	)	)	PUNCT
ajtas-2341	2	53	,	,	PUNCT
ajtas-2341	2	54	and	and	CCONJ
ajtas-2341	2	55	atomic	atomic	ADJ
ajtas-2341	2	56	layer	layer	NOUN
ajtas-2341	2	57	deposition	deposition	NOUN
ajtas-2341	2	58	(	(	PUNCT
ajtas-2341	2	59	ald	ald	PROPN
ajtas-2341	2	60	)	)	PUNCT
ajtas-2341	2	61	.	.	PUNCT
ajtas-2341	3	1	these	these	DET
ajtas-2341	3	2	techniques	technique	NOUN
ajtas-2341	3	3	allow	allow	VERB
ajtas-2341	3	4	for	for	ADP
ajtas-2341	3	5	precise	precise	ADJ
ajtas-2341	3	6	control	control	NOUN
ajtas-2341	3	7	of	of	ADP
ajtas-2341	3	8	doping	doping	NOUN
ajtas-2341	3	9	concentrations	concentration	NOUN
ajtas-2341	3	10	,	,	PUNCT
ajtas-2341	3	11	layer	layer	NOUN
ajtas-2341	3	12	thicknesses	thickness	NOUN
ajtas-2341	3	13	,	,	PUNCT
ajtas-2341	3	14	and	and	CCONJ
ajtas-2341	3	15	interface	interface	NOUN
ajtas-2341	3	16	quality	quality	NOUN
ajtas-2341	3	17	,	,	PUNCT
ajtas-2341	3	18	leading	lead	VERB
ajtas-2341	3	19	to	to	ADP
ajtas-2341	3	20	improved	improve	VERB
ajtas-2341	3	21	thermoelectric	thermoelectric	ADJ
ajtas-2341	3	22	efficiency	efficiency	NOUN
ajtas-2341	3	23	.	.	PUNCT
ajtas-2341	4	1	additionally	additionally	ADV
ajtas-2341	4	2	,	,	PUNCT
ajtas-2341	4	3	the	the	DET
ajtas-2341	4	4	article	article	NOUN
ajtas-2341	4	5	discusses	discuss	VERB
ajtas-2341	4	6	the	the	DET
ajtas-2341	4	7	challenges	challenge	NOUN
ajtas-2341	4	8	of	of	ADP
ajtas-2341	4	9	minimizing	minimize	VERB
ajtas-2341	4	10	thermal	thermal	ADJ
ajtas-2341	4	11	conductivity	conductivity	NOUN
ajtas-2341	4	12	while	while	SCONJ
ajtas-2341	4	13	maximizing	maximize	VERB
ajtas-2341	4	14	electrical	electrical	ADJ
ajtas-2341	4	15	conductivity	conductivity	NOUN
ajtas-2341	4	16	,	,	PUNCT
ajtas-2341	4	17	aiming	aim	VERB
ajtas-2341	4	18	to	to	PART
ajtas-2341	4	19	optimize	optimize	VERB
ajtas-2341	4	20	the	the	DET
ajtas-2341	4	21	thermoelectric	thermoelectric	ADJ
ajtas-2341	4	22	figure	figure	NOUN
ajtas-2341	4	23	of	of	ADP
ajtas-2341	4	24	merit	merit	NOUN
ajtas-2341	4	25	(	(	PUNCT
ajtas-2341	4	26	zt	zt	PROPN
ajtas-2341	4	27	)	)	PUNCT
ajtas-2341	4	28	.	.	PUNCT
ajtas-2341	5	1	epitaxial	epitaxial	ADJ
ajtas-2341	5	2	silicon	silicon	NOUN
ajtas-2341	5	3	,	,	PUNCT
ajtas-2341	5	4	p	p	NOUN
ajtas-2341	5	5	-	-	PUNCT
ajtas-2341	5	6	n	n	PRON
ajtas-2341	5	7	junction	junction	NOUN
ajtas-2341	5	8	,	,	PUNCT
ajtas-2341	5	9	thermoelectric	thermoelectric	ADJ
ajtas-2341	5	10	applications	application	NOUN
ajtas-2341	5	11	,	,	PUNCT
ajtas-2341	5	12	molecular	molecular	ADJ
ajtas-2341	5	13	beam	beam	NOUN
ajtas-2341	5	14	epitaxy	epitaxy	NOUN
ajtas-2341	5	15	(	(	PUNCT
ajtas-2341	5	16	mbe	mbe	PROPN
ajtas-2341	5	17	)	)	PUNCT
ajtas-2341	5	18	,	,	PUNCT
ajtas-2341	5	19	chemical	chemical	NOUN
ajtas-2341	5	20	vapor	vapor	NOUN
ajtas-2341	5	21	deposition	deposition	NOUN
ajtas-2341	5	22	(	(	PUNCT
ajtas-2341	5	23	cvd	cvd	PROPN
ajtas-2341	5	24	)	)	PUNCT
ajtas-2341	5	25	,	,	PUNCT
ajtas-2341	5	26	atomic	atomic	ADJ
ajtas-2341	5	27	layer	layer	NOUN
ajtas-2341	5	28	deposition	deposition	NOUN
ajtas-2341	5	29	(	(	PUNCT
ajtas-2341	5	30	ald	ald	PROPN
ajtas-2341	5	31	)	)	PUNCT
ajtas-2341	5	32	,	,	PUNCT
ajtas-2341	5	33	ionstimulated	ionstimulate	VERB
ajtas-2341	5	34	vacuum	vacuum	NOUN
ajtas-2341	5	35	deposition	deposition	NOUN
ajtas-2341	5	36	(	(	PUNCT
ajtas-2341	5	37	isvd	isvd	NOUN
ajtas-2341	5	38	)	)	PUNCT
ajtas-2341	5	39	,	,	PUNCT
ajtas-2341	5	40	ion	ion	NOUN
ajtas-2341	5	41	treatment	treatment	NOUN
ajtas-2341	5	42	,	,	PUNCT
ajtas-2341	5	43	energy	energy	NOUN
ajtas-2341	5	44	harvesting	harvesting	NOUN
ajtas-2341	5	45	,	,	PUNCT
ajtas-2341	5	46	waste	waste	NOUN
ajtas-2341	5	47	heat	heat	NOUN
ajtas-2341	5	48	recovery	recovery	NOUN
ajtas-2341	5	49	.	.	PUNCT
ajtas-2341	6	1	introduction	introduction	NOUN
ajtas-2341	6	2	thermoelectric	thermoelectric	ADJ
ajtas-2341	6	3	materials	material	NOUN
ajtas-2341	6	4	have	have	AUX
ajtas-2341	6	5	emerged	emerge	VERB
ajtas-2341	6	6	as	as	ADP
ajtas-2341	6	7	promising	promise	VERB
ajtas-2341	6	8	candidates	candidate	NOUN
ajtas-2341	6	9	for	for	ADP
ajtas-2341	6	10	converting	convert	VERB
ajtas-2341	6	11	heat	heat	NOUN
ajtas-2341	6	12	into	into	ADP
ajtas-2341	6	13	electrical	electrical	ADJ
ajtas-2341	6	14	energy	energy	NOUN
ajtas-2341	6	15	,	,	PUNCT
ajtas-2341	6	16	a	a	DET
ajtas-2341	6	17	process	process	NOUN
ajtas-2341	6	18	with	with	ADP
ajtas-2341	6	19	significant	significant	ADJ
ajtas-2341	6	20	potential	potential	NOUN
ajtas-2341	6	21	for	for	ADP
ajtas-2341	6	22	energy	energy	NOUN
ajtas-2341	6	23	harvesting	harvesting	NOUN
ajtas-2341	6	24	and	and	CCONJ
ajtas-2341	6	25	waste	waste	NOUN
ajtas-2341	6	26	heat	heat	NOUN
ajtas-2341	6	27	recovery	recovery	NOUN
ajtas-2341	6	28	applications	application	NOUN
ajtas-2341	6	29	.	.	PUNCT
ajtas-2341	7	1	epitaxial	epitaxial	ADJ
ajtas-2341	7	2	silicon	silicon	NOUN
ajtas-2341	7	3	p	p	PROPN
ajtas-2341	7	4	-	-	PUNCT
ajtas-2341	7	5	n	n	NOUN
ajtas-2341	7	6	structures	structure	NOUN
ajtas-2341	7	7	,	,	PUNCT
ajtas-2341	7	8	in	in	ADP
ajtas-2341	7	9	particular	particular	ADJ
ajtas-2341	7	10	,	,	PUNCT
ajtas-2341	7	11	have	have	AUX
ajtas-2341	7	12	gained	gain	VERB
ajtas-2341	7	13	considerable	considerable	ADJ
ajtas-2341	7	14	attention	attention	NOUN
ajtas-2341	7	15	due	due	ADP
ajtas-2341	7	16	to	to	ADP
ajtas-2341	7	17	their	their	PRON
ajtas-2341	7	18	ability	ability	NOUN
ajtas-2341	7	19	to	to	PART
ajtas-2341	7	20	efficiently	efficiently	ADV
ajtas-2341	7	21	manage	manage	VERB
ajtas-2341	7	22	the	the	DET
ajtas-2341	7	23	transport	transport	NOUN
ajtas-2341	7	24	of	of	ADP
ajtas-2341	7	25	heat	heat	NOUN
ajtas-2341	7	26	and	and	CCONJ
ajtas-2341	7	27	electrical	electrical	ADJ
ajtas-2341	7	28	charge	charge	NOUN
ajtas-2341	7	29	.	.	PUNCT
ajtas-2341	8	1	these	these	DET
ajtas-2341	8	2	structures	structure	NOUN
ajtas-2341	8	3	,	,	PUNCT
ajtas-2341	8	4	based	base	VERB
ajtas-2341	8	5	on	on	ADP
ajtas-2341	8	6	the	the	DET
ajtas-2341	8	7	seebeck	seebeck	NOUN
ajtas-2341	8	8	effect	effect	NOUN
ajtas-2341	8	9	,	,	PUNCT
ajtas-2341	8	10	rely	rely	VERB
ajtas-2341	8	11	on	on	ADP
ajtas-2341	8	12	a	a	DET
ajtas-2341	8	13	temperature	temperature	NOUN
ajtas-2341	8	14	gradient	gradient	NOUN
ajtas-2341	8	15	to	to	PART
ajtas-2341	8	16	generate	generate	VERB
ajtas-2341	8	17	electrical	electrical	ADJ
ajtas-2341	8	18	voltage	voltage	NOUN
ajtas-2341	8	19	,	,	PUNCT
ajtas-2341	8	20	thus	thus	ADV
ajtas-2341	8	21	allowing	allow	VERB
ajtas-2341	8	22	for	for	ADP
ajtas-2341	8	23	energy	energy	NOUN
ajtas-2341	8	24	conversion	conversion	NOUN
ajtas-2341	8	25	without	without	ADP
ajtas-2341	8	26	moving	move	VERB
ajtas-2341	8	27	parts	part	NOUN
ajtas-2341	8	28	.	.	PUNCT
ajtas-2341	9	1	however	however	ADV
ajtas-2341	9	2	,	,	PUNCT
ajtas-2341	9	3	optimizing	optimize	VERB
ajtas-2341	9	4	the	the	DET
ajtas-2341	9	5	efficiency	efficiency	NOUN
ajtas-2341	9	6	of	of	ADP
ajtas-2341	9	7	these	these	DET
ajtas-2341	9	8	devices	device	NOUN
ajtas-2341	9	9	requires	require	VERB
ajtas-2341	9	10	advanced	advanced	ADJ
ajtas-2341	9	11	fabrication	fabrication	NOUN
ajtas-2341	9	12	techniques	technique	NOUN
ajtas-2341	9	13	that	that	PRON
ajtas-2341	9	14	enable	enable	VERB
ajtas-2341	9	15	precise	precise	ADJ
ajtas-2341	9	16	control	control	NOUN
ajtas-2341	9	17	over	over	ADP
ajtas-2341	9	18	material	material	NOUN
ajtas-2341	9	19	properties	property	NOUN
ajtas-2341	9	20	,	,	PUNCT
ajtas-2341	9	21	such	such	ADJ
ajtas-2341	9	22	as	as	ADP
ajtas-2341	9	23	doping	doping	NOUN
ajtas-2341	9	24	concentration	concentration	NOUN
ajtas-2341	9	25	,	,	PUNCT
ajtas-2341	9	26	layer	layer	NOUN
ajtas-2341	9	27	thickness	thickness	NOUN
ajtas-2341	9	28	,	,	PUNCT
ajtas-2341	9	29	and	and	CCONJ
ajtas-2341	9	30	interface	interface	NOUN
ajtas-2341	9	31	quality	quality	NOUN
ajtas-2341	9	32	.	.	PUNCT
ajtas-2341	10	1	the	the	DET
ajtas-2341	10	2	development	development	NOUN
ajtas-2341	10	3	of	of	ADP
ajtas-2341	10	4	epitaxial	epitaxial	ADJ
ajtas-2341	10	5	silicon	silicon	NOUN
ajtas-2341	10	6	p	p	PROPN
ajtas-2341	10	7	-	-	PUNCT
ajtas-2341	10	8	n	n	NOUN
ajtas-2341	10	9	structures	structure	NOUN
ajtas-2341	10	10	has	have	AUX
ajtas-2341	10	11	revolutionized	revolutionize	VERB
ajtas-2341	10	12	thermoelectric	thermoelectric	ADJ
ajtas-2341	10	13	applications	application	NOUN
ajtas-2341	10	14	,	,	PUNCT
ajtas-2341	10	15	particularly	particularly	ADV
ajtas-2341	10	16	in	in	ADP
ajtas-2341	10	17	the	the	DET
ajtas-2341	10	18	fields	field	NOUN
ajtas-2341	10	19	of	of	ADP
ajtas-2341	10	20	energy	energy	NOUN
ajtas-2341	10	21	harvesting	harvesting	NOUN
ajtas-2341	10	22	and	and	CCONJ
ajtas-2341	10	23	waste	waste	NOUN
ajtas-2341	10	24	heat	heat	NOUN
ajtas-2341	10	25	recovery	recovery	NOUN
ajtas-2341	10	26	.	.	PUNCT
ajtas-2341	11	1	recent	recent	ADJ
ajtas-2341	11	2	advancements	advancement	NOUN
ajtas-2341	11	3	in	in	ADP
ajtas-2341	11	4	the	the	DET
ajtas-2341	11	5	fabrication	fabrication	NOUN
ajtas-2341	11	6	of	of	ADP
ajtas-2341	11	7	epitaxial	epitaxial	ADJ
ajtas-2341	11	8	silicon	silicon	NOUN
ajtas-2341	11	9	p	p	PROPN
ajtas-2341	11	10	-	-	PUNCT
ajtas-2341	11	11	n	n	NOUN
ajtas-2341	11	12	junctions	junction	NOUN
ajtas-2341	11	13	have	have	AUX
ajtas-2341	11	14	led	lead	VERB
ajtas-2341	11	15	to	to	ADP
ajtas-2341	11	16	significant	significant	ADJ
ajtas-2341	11	17	improvements	improvement	NOUN
ajtas-2341	11	18	in	in	ADP
ajtas-2341	11	19	thermoelectric	thermoelectric	ADJ
ajtas-2341	11	20	efficiency	efficiency	NOUN
ajtas-2341	11	21	.	.	PUNCT
ajtas-2341	12	1	molecular	molecular	ADJ
ajtas-2341	12	2	beam	beam	NOUN
ajtas-2341	12	3	epitaxy	epitaxy	PROPN
ajtas-2341	12	4	(	(	PUNCT
ajtas-2341	12	5	mbe	mbe	PROPN
ajtas-2341	12	6	)	)	PUNCT
ajtas-2341	12	7	,	,	PUNCT
ajtas-2341	12	8	chemical	chemical	NOUN
ajtas-2341	12	9	vapor	vapor	NOUN
ajtas-2341	12	10	deposition	deposition	NOUN
ajtas-2341	12	11	(	(	PUNCT
ajtas-2341	12	12	cvd	cvd	PROPN
ajtas-2341	12	13	)	)	PUNCT
ajtas-2341	12	14	,	,	PUNCT
ajtas-2341	12	15	and	and	CCONJ
ajtas-2341	12	16	atomic	atomic	ADJ
ajtas-2341	12	17	layer	layer	NOUN
ajtas-2341	12	18	american	american	PROPN
ajtas-2341	12	19	journal	journal	PROPN
ajtas-2341	12	20	of	of	ADP
ajtas-2341	12	21	technology	technology	NOUN
ajtas-2341	12	22	and	and	CCONJ
ajtas-2341	12	23	applied	apply	VERB
ajtas-2341	12	24	sciences	science	NOUN
ajtas-2341	12	25	volume	volume	NOUN
ajtas-2341	12	26	28	28	NUM
ajtas-2341	12	27	,	,	PUNCT
ajtas-2341	12	28	september	september	PROPN
ajtas-2341	12	29	2024	2024	NUM
ajtas-2341	12	30	p	p	NOUN
ajtas-2341	12	31	a	a	DET
ajtas-2341	12	32	g	g	NOUN
ajtas-2341	12	33	e	e	NOUN
ajtas-2341	12	34	|	|	ADV
ajtas-2341	12	35	23	23	NUM
ajtas-2341	12	36	www.americanjournal.org	www.americanjournal.org	NOUN
ajtas-2341	12	37	deposition	deposition	NOUN
ajtas-2341	12	38	(	(	PUNCT
ajtas-2341	12	39	ald	ald	PROPN
ajtas-2341	12	40	)	)	PUNCT
ajtas-2341	12	41	are	be	AUX
ajtas-2341	12	42	among	among	ADP
ajtas-2341	12	43	the	the	DET
ajtas-2341	12	44	most	most	ADV
ajtas-2341	12	45	widely	widely	ADV
ajtas-2341	12	46	used	use	VERB
ajtas-2341	12	47	techniques	technique	NOUN
ajtas-2341	12	48	that	that	PRON
ajtas-2341	12	49	allow	allow	VERB
ajtas-2341	12	50	for	for	ADP
ajtas-2341	12	51	precise	precise	ADJ
ajtas-2341	12	52	control	control	NOUN
ajtas-2341	12	53	of	of	ADP
ajtas-2341	12	54	the	the	DET
ajtas-2341	12	55	growth	growth	NOUN
ajtas-2341	12	56	and	and	CCONJ
ajtas-2341	12	57	quality	quality	NOUN
ajtas-2341	12	58	of	of	ADP
ajtas-2341	12	59	silicon	silicon	NOUN
ajtas-2341	12	60	layers	layer	NOUN
ajtas-2341	12	61	.	.	PUNCT
ajtas-2341	13	1	these	these	DET
ajtas-2341	13	2	methods	method	NOUN
ajtas-2341	13	3	have	have	AUX
ajtas-2341	13	4	opened	open	VERB
ajtas-2341	13	5	new	new	ADJ
ajtas-2341	13	6	ways	way	NOUN
ajtas-2341	13	7	for	for	ADP
ajtas-2341	13	8	optimizing	optimize	VERB
ajtas-2341	13	9	thermoelectric	thermoelectric	ADJ
ajtas-2341	13	10	properties	property	NOUN
ajtas-2341	13	11	by	by	ADP
ajtas-2341	13	12	carefully	carefully	ADV
ajtas-2341	13	13	manipulating	manipulate	VERB
ajtas-2341	13	14	the	the	DET
ajtas-2341	13	15	electrical	electrical	ADJ
ajtas-2341	13	16	and	and	CCONJ
ajtas-2341	13	17	thermal	thermal	ADJ
ajtas-2341	13	18	conductivity	conductivity	NOUN
ajtas-2341	13	19	of	of	ADP
ajtas-2341	13	20	the	the	DET
ajtas-2341	13	21	silicon	silicon	NOUN
ajtas-2341	13	22	layers	layer	NOUN
ajtas-2341	13	23	[	[	X
ajtas-2341	13	24	1	1	NUM
ajtas-2341	13	25	]	]	PUNCT
ajtas-2341	13	26	.	.	PUNCT
ajtas-2341	14	1	this	this	DET
ajtas-2341	14	2	article	article	NOUN
ajtas-2341	14	3	will	will	AUX
ajtas-2341	14	4	explore	explore	VERB
ajtas-2341	14	5	the	the	DET
ajtas-2341	14	6	key	key	ADJ
ajtas-2341	14	7	advancements	advancement	NOUN
ajtas-2341	14	8	in	in	ADP
ajtas-2341	14	9	fabrication	fabrication	NOUN
ajtas-2341	14	10	techniques	technique	NOUN
ajtas-2341	14	11	for	for	ADP
ajtas-2341	14	12	epitaxial	epitaxial	ADJ
ajtas-2341	14	13	silicon	silicon	NOUN
ajtas-2341	14	14	p	p	PROPN
ajtas-2341	14	15	-	-	PUNCT
ajtas-2341	14	16	n	n	NOUN
ajtas-2341	14	17	junctions	junction	NOUN
ajtas-2341	14	18	,	,	PUNCT
ajtas-2341	14	19	their	their	PRON
ajtas-2341	14	20	impact	impact	NOUN
ajtas-2341	14	21	on	on	ADP
ajtas-2341	14	22	thermoelectric	thermoelectric	ADJ
ajtas-2341	14	23	performance	performance	NOUN
ajtas-2341	14	24	,	,	PUNCT
ajtas-2341	14	25	and	and	CCONJ
ajtas-2341	14	26	future	future	ADJ
ajtas-2341	14	27	prospects	prospect	NOUN
ajtas-2341	14	28	for	for	ADP
ajtas-2341	14	29	further	far	ADV
ajtas-2341	14	30	enhancing	enhance	VERB
ajtas-2341	14	31	the	the	DET
ajtas-2341	14	32	efficiency	efficiency	NOUN
ajtas-2341	14	33	of	of	ADP
ajtas-2341	14	34	thermoelectric	thermoelectric	ADJ
ajtas-2341	14	35	devices	device	NOUN
ajtas-2341	14	36	.	.	PUNCT
ajtas-2341	15	1	main	main	ADJ
ajtas-2341	15	2	part	part	NOUN
ajtas-2341	15	3	:	:	PUNCT
ajtas-2341	15	4	1	1	X
ajtas-2341	15	5	.	.	X
ajtas-2341	15	6	molecular	molecular	ADJ
ajtas-2341	15	7	beam	beam	NOUN
ajtas-2341	15	8	epitaxy	epitaxy	PROPN
ajtas-2341	15	9	(	(	PUNCT
ajtas-2341	15	10	mbe	mbe	PROPN
ajtas-2341	15	11	)	)	PUNCT
ajtas-2341	15	12	in	in	ADP
ajtas-2341	15	13	silicon	silicon	NOUN
ajtas-2341	15	14	p	p	PROPN
ajtas-2341	15	15	-	-	PUNCT
ajtas-2341	15	16	n	n	PRON
ajtas-2341	15	17	fabrication	fabrication	NOUN
ajtas-2341	15	18	molecular	molecular	ADJ
ajtas-2341	15	19	beam	beam	NOUN
ajtas-2341	15	20	epitaxy	epitaxy	PROPN
ajtas-2341	15	21	(	(	PUNCT
ajtas-2341	15	22	mbe	mbe	PROPN
ajtas-2341	15	23	)	)	PUNCT
ajtas-2341	15	24	has	have	AUX
ajtas-2341	15	25	emerged	emerge	VERB
ajtas-2341	15	26	as	as	ADP
ajtas-2341	15	27	one	one	NUM
ajtas-2341	15	28	of	of	ADP
ajtas-2341	15	29	the	the	DET
ajtas-2341	15	30	most	most	ADV
ajtas-2341	15	31	precise	precise	ADJ
ajtas-2341	15	32	methods	method	NOUN
ajtas-2341	15	33	for	for	ADP
ajtas-2341	15	34	fabricating	fabricate	VERB
ajtas-2341	15	35	epitaxial	epitaxial	ADJ
ajtas-2341	15	36	silicon	silicon	NOUN
ajtas-2341	15	37	layers	layer	NOUN
ajtas-2341	15	38	.	.	PUNCT
ajtas-2341	16	1	in	in	ADP
ajtas-2341	16	2	this	this	DET
ajtas-2341	16	3	process	process	NOUN
ajtas-2341	16	4	,	,	PUNCT
ajtas-2341	16	5	silicon	silicon	NOUN
ajtas-2341	16	6	atoms	atom	NOUN
ajtas-2341	16	7	are	be	AUX
ajtas-2341	16	8	deposited	deposit	VERB
ajtas-2341	16	9	on	on	ADP
ajtas-2341	16	10	a	a	DET
ajtas-2341	16	11	substrate	substrate	NOUN
ajtas-2341	16	12	under	under	ADP
ajtas-2341	16	13	ultra	ultra	ADJ
ajtas-2341	16	14	-	-	ADJ
ajtas-2341	16	15	high	high	ADJ
ajtas-2341	16	16	vacuum	vacuum	NOUN
ajtas-2341	16	17	conditions	condition	NOUN
ajtas-2341	16	18	,	,	PUNCT
ajtas-2341	16	19	allowing	allow	VERB
ajtas-2341	16	20	for	for	ADP
ajtas-2341	16	21	atomic	atomic	ADJ
ajtas-2341	16	22	-	-	PUNCT
ajtas-2341	16	23	scale	scale	NOUN
ajtas-2341	16	24	control	control	NOUN
ajtas-2341	16	25	over	over	ADP
ajtas-2341	16	26	layer	layer	NOUN
ajtas-2341	16	27	thickness	thickness	NOUN
ajtas-2341	16	28	and	and	CCONJ
ajtas-2341	16	29	doping	doping	NOUN
ajtas-2341	16	30	profiles	profile	NOUN
ajtas-2341	16	31	.	.	PUNCT
ajtas-2341	17	1	one	one	NUM
ajtas-2341	17	2	of	of	ADP
ajtas-2341	17	3	the	the	DET
ajtas-2341	17	4	key	key	ADJ
ajtas-2341	17	5	advantages	advantage	NOUN
ajtas-2341	17	6	of	of	ADP
ajtas-2341	17	7	mbe	mbe	PROPN
ajtas-2341	17	8	is	be	AUX
ajtas-2341	17	9	its	its	PRON
ajtas-2341	17	10	ability	ability	NOUN
ajtas-2341	17	11	to	to	PART
ajtas-2341	17	12	create	create	VERB
ajtas-2341	17	13	sharp	sharp	ADJ
ajtas-2341	17	14	p	p	PROPN
ajtas-2341	17	15	-	-	PUNCT
ajtas-2341	17	16	n	n	NOUN
ajtas-2341	17	17	junctions	junction	NOUN
ajtas-2341	17	18	with	with	ADP
ajtas-2341	17	19	well	well	ADV
ajtas-2341	17	20	-	-	PUNCT
ajtas-2341	17	21	defined	define	VERB
ajtas-2341	17	22	interfaces	interface	NOUN
ajtas-2341	17	23	,	,	PUNCT
ajtas-2341	17	24	which	which	PRON
ajtas-2341	17	25	is	be	AUX
ajtas-2341	17	26	essential	essential	ADJ
ajtas-2341	17	27	for	for	ADP
ajtas-2341	17	28	minimizing	minimize	VERB
ajtas-2341	17	29	carrier	carrier	NOUN
ajtas-2341	17	30	recombination	recombination	NOUN
ajtas-2341	17	31	and	and	CCONJ
ajtas-2341	17	32	improving	improve	VERB
ajtas-2341	17	33	the	the	DET
ajtas-2341	17	34	overall	overall	ADJ
ajtas-2341	17	35	efficiency	efficiency	NOUN
ajtas-2341	17	36	of	of	ADP
ajtas-2341	17	37	thermoelectric	thermoelectric	ADJ
ajtas-2341	17	38	devices	device	NOUN
ajtas-2341	17	39	[	[	X
ajtas-2341	17	40	2	2	NUM
ajtas-2341	17	41	]	]	PUNCT
ajtas-2341	17	42	.	.	PUNCT
ajtas-2341	18	1	recent	recent	ADJ
ajtas-2341	18	2	studies	study	NOUN
ajtas-2341	18	3	have	have	AUX
ajtas-2341	18	4	demonstrated	demonstrate	VERB
ajtas-2341	18	5	that	that	SCONJ
ajtas-2341	18	6	mbe	mbe	PROPN
ajtas-2341	18	7	-	-	PUNCT
ajtas-2341	18	8	grown	grow	VERB
ajtas-2341	18	9	silicon	silicon	NOUN
ajtas-2341	18	10	p	p	PROPN
ajtas-2341	18	11	-	-	PUNCT
ajtas-2341	18	12	n	n	NOUN
ajtas-2341	18	13	structures	structure	NOUN
ajtas-2341	18	14	can	can	AUX
ajtas-2341	18	15	achieve	achieve	VERB
ajtas-2341	18	16	higher	high	ADJ
ajtas-2341	18	17	thermoelectric	thermoelectric	ADJ
ajtas-2341	18	18	efficiency	efficiency	NOUN
ajtas-2341	18	19	by	by	ADP
ajtas-2341	18	20	optimizing	optimize	VERB
ajtas-2341	18	21	the	the	DET
ajtas-2341	18	22	doping	doping	NOUN
ajtas-2341	18	23	concentration	concentration	NOUN
ajtas-2341	18	24	and	and	CCONJ
ajtas-2341	18	25	introducing	introduce	VERB
ajtas-2341	18	26	graded	grade	VERB
ajtas-2341	18	27	doping	doping	NOUN
ajtas-2341	18	28	profiles	profile	NOUN
ajtas-2341	18	29	to	to	PART
ajtas-2341	18	30	reduce	reduce	VERB
ajtas-2341	18	31	thermal	thermal	ADJ
ajtas-2341	18	32	conductivity	conductivity	NOUN
ajtas-2341	18	33	while	while	SCONJ
ajtas-2341	18	34	maintaining	maintain	VERB
ajtas-2341	18	35	high	high	ADJ
ajtas-2341	18	36	electrical	electrical	ADJ
ajtas-2341	18	37	conductivity	conductivity	NOUN
ajtas-2341	18	38	.	.	PUNCT
ajtas-2341	19	1	this	this	DET
ajtas-2341	19	2	technique	technique	NOUN
ajtas-2341	19	3	has	have	AUX
ajtas-2341	19	4	proven	prove	VERB
ajtas-2341	19	5	particularly	particularly	ADV
ajtas-2341	19	6	effective	effective	ADJ
ajtas-2341	19	7	in	in	ADP
ajtas-2341	19	8	minimizing	minimize	VERB
ajtas-2341	19	9	defects	defect	NOUN
ajtas-2341	19	10	at	at	ADP
ajtas-2341	19	11	the	the	DET
ajtas-2341	19	12	interface	interface	NOUN
ajtas-2341	19	13	,	,	PUNCT
ajtas-2341	19	14	which	which	PRON
ajtas-2341	19	15	can	can	AUX
ajtas-2341	19	16	significantly	significantly	ADV
ajtas-2341	19	17	affect	affect	VERB
ajtas-2341	19	18	carrier	carrier	NOUN
ajtas-2341	19	19	mobility	mobility	NOUN
ajtas-2341	19	20	[	[	X
ajtas-2341	19	21	3	3	NUM
ajtas-2341	19	22	]	]	PUNCT
ajtas-2341	19	23	.	.	PUNCT
ajtas-2341	20	1	2	2	X
ajtas-2341	20	2	.	.	X
ajtas-2341	20	3	chemical	chemical	ADJ
ajtas-2341	20	4	vapor	vapor	NOUN
ajtas-2341	20	5	deposition	deposition	NOUN
ajtas-2341	20	6	(	(	PUNCT
ajtas-2341	20	7	cvd	cvd	PROPN
ajtas-2341	20	8	)	)	PUNCT
ajtas-2341	20	9	for	for	ADP
ajtas-2341	20	10	large	large	ADJ
ajtas-2341	20	11	-	-	PUNCT
ajtas-2341	20	12	scale	scale	NOUN
ajtas-2341	20	13	production	production	NOUN
ajtas-2341	20	14	while	while	SCONJ
ajtas-2341	20	15	mbe	mbe	PROPN
ajtas-2341	20	16	offers	offer	VERB
ajtas-2341	20	17	precise	precise	ADJ
ajtas-2341	20	18	control	control	NOUN
ajtas-2341	20	19	over	over	ADP
ajtas-2341	20	20	the	the	DET
ajtas-2341	20	21	epitaxial	epitaxial	ADJ
ajtas-2341	20	22	growth	growth	NOUN
ajtas-2341	20	23	process	process	NOUN
ajtas-2341	20	24	,	,	PUNCT
ajtas-2341	20	25	chemical	chemical	NOUN
ajtas-2341	20	26	vapor	vapor	NOUN
ajtas-2341	20	27	deposition	deposition	NOUN
ajtas-2341	20	28	(	(	PUNCT
ajtas-2341	20	29	cvd	cvd	NOUN
ajtas-2341	20	30	)	)	PUNCT
ajtas-2341	20	31	is	be	AUX
ajtas-2341	20	32	better	well	ADV
ajtas-2341	20	33	suited	suited	ADJ
ajtas-2341	20	34	for	for	ADP
ajtas-2341	20	35	large	large	ADJ
ajtas-2341	20	36	-	-	PUNCT
ajtas-2341	20	37	scale	scale	NOUN
ajtas-2341	20	38	production	production	NOUN
ajtas-2341	20	39	.	.	PUNCT
ajtas-2341	21	1	in	in	ADP
ajtas-2341	21	2	cvd	cvd	PROPN
ajtas-2341	21	3	,	,	PUNCT
ajtas-2341	21	4	silicon	silicon	NOUN
ajtas-2341	21	5	precursors	precursor	NOUN
ajtas-2341	21	6	are	be	AUX
ajtas-2341	21	7	introduced	introduce	VERB
ajtas-2341	21	8	in	in	ADP
ajtas-2341	21	9	a	a	DET
ajtas-2341	21	10	gas	gas	NOUN
ajtas-2341	21	11	phase	phase	NOUN
ajtas-2341	21	12	,	,	PUNCT
ajtas-2341	21	13	which	which	PRON
ajtas-2341	21	14	reacts	react	VERB
ajtas-2341	21	15	on	on	ADP
ajtas-2341	21	16	the	the	DET
ajtas-2341	21	17	substrate	substrate	NOUN
ajtas-2341	21	18	to	to	PART
ajtas-2341	21	19	form	form	VERB
ajtas-2341	21	20	thin	thin	ADJ
ajtas-2341	21	21	silicon	silicon	NOUN
ajtas-2341	21	22	films	film	NOUN
ajtas-2341	21	23	.	.	PUNCT
ajtas-2341	22	1	this	this	DET
ajtas-2341	22	2	method	method	NOUN
ajtas-2341	22	3	is	be	AUX
ajtas-2341	22	4	widely	widely	ADV
ajtas-2341	22	5	used	use	VERB
ajtas-2341	22	6	in	in	ADP
ajtas-2341	22	7	the	the	DET
ajtas-2341	22	8	semiconductor	semiconductor	NOUN
ajtas-2341	22	9	industry	industry	NOUN
ajtas-2341	22	10	due	due	ADP
ajtas-2341	22	11	to	to	ADP
ajtas-2341	22	12	its	its	PRON
ajtas-2341	22	13	scalability	scalability	NOUN
ajtas-2341	22	14	and	and	CCONJ
ajtas-2341	22	15	cost	cost	NOUN
ajtas-2341	22	16	-	-	PUNCT
ajtas-2341	22	17	effectiveness	effectiveness	NOUN
ajtas-2341	22	18	.	.	PUNCT
ajtas-2341	23	1	however	however	ADV
ajtas-2341	23	2	,	,	PUNCT
ajtas-2341	23	3	achieving	achieve	VERB
ajtas-2341	23	4	the	the	DET
ajtas-2341	23	5	same	same	ADJ
ajtas-2341	23	6	level	level	NOUN
ajtas-2341	23	7	of	of	ADP
ajtas-2341	23	8	control	control	NOUN
ajtas-2341	23	9	as	as	SCONJ
ajtas-2341	23	10	mbe	mbe	PROPN
ajtas-2341	23	11	requires	require	VERB
ajtas-2341	23	12	careful	careful	ADJ
ajtas-2341	23	13	optimization	optimization	NOUN
ajtas-2341	23	14	of	of	ADP
ajtas-2341	23	15	process	process	NOUN
ajtas-2341	23	16	parameters	parameter	NOUN
ajtas-2341	23	17	,	,	PUNCT
ajtas-2341	23	18	such	such	ADJ
ajtas-2341	23	19	as	as	ADP
ajtas-2341	23	20	temperature	temperature	NOUN
ajtas-2341	23	21	,	,	PUNCT
ajtas-2341	23	22	pressure	pressure	NOUN
ajtas-2341	23	23	,	,	PUNCT
ajtas-2341	23	24	and	and	CCONJ
ajtas-2341	23	25	gas	gas	NOUN
ajtas-2341	23	26	flow	flow	NOUN
ajtas-2341	23	27	rates	rate	NOUN
ajtas-2341	23	28	[	[	X
ajtas-2341	23	29	4	4	NUM
ajtas-2341	23	30	]	]	PUNCT
ajtas-2341	23	31	.	.	PUNCT
ajtas-2341	24	1	one	one	NUM
ajtas-2341	24	2	of	of	ADP
ajtas-2341	24	3	the	the	DET
ajtas-2341	24	4	key	key	ADJ
ajtas-2341	24	5	challenges	challenge	NOUN
ajtas-2341	24	6	in	in	ADP
ajtas-2341	24	7	cvd	cvd	PROPN
ajtas-2341	24	8	is	be	AUX
ajtas-2341	24	9	controlling	control	VERB
ajtas-2341	24	10	the	the	DET
ajtas-2341	24	11	thermal	thermal	ADJ
ajtas-2341	24	12	conductivity	conductivity	NOUN
ajtas-2341	24	13	of	of	ADP
ajtas-2341	24	14	the	the	DET
ajtas-2341	24	15	silicon	silicon	NOUN
ajtas-2341	24	16	layers	layer	NOUN
ajtas-2341	24	17	,	,	PUNCT
ajtas-2341	24	18	which	which	PRON
ajtas-2341	24	19	is	be	AUX
ajtas-2341	24	20	crucial	crucial	ADJ
ajtas-2341	24	21	for	for	ADP
ajtas-2341	24	22	maximizing	maximize	VERB
ajtas-2341	24	23	the	the	DET
ajtas-2341	24	24	thermoelectric	thermoelectric	ADJ
ajtas-2341	24	25	figure	figure	NOUN
ajtas-2341	24	26	of	of	ADP
ajtas-2341	24	27	merit	merit	NOUN
ajtas-2341	24	28	(	(	PUNCT
ajtas-2341	24	29	zt	zt	PROPN
ajtas-2341	24	30	)	)	PUNCT
ajtas-2341	24	31	.	.	PUNCT
ajtas-2341	25	1	recent	recent	ADJ
ajtas-2341	25	2	advancements	advancement	NOUN
ajtas-2341	25	3	in	in	ADP
ajtas-2341	25	4	low	low	ADJ
ajtas-2341	25	5	-	-	PUNCT
ajtas-2341	25	6	pressure	pressure	NOUN
ajtas-2341	25	7	cvd	cvd	NOUN
ajtas-2341	25	8	(	(	PUNCT
ajtas-2341	25	9	lpcvd	lpcvd	PROPN
ajtas-2341	25	10	)	)	PUNCT
ajtas-2341	25	11	and	and	CCONJ
ajtas-2341	25	12	plasma	plasma	NOUN
ajtas-2341	25	13	-	-	PUNCT
ajtas-2341	25	14	enhanced	enhance	VERB
ajtas-2341	25	15	cvd	cvd	PROPN
ajtas-2341	25	16	(	(	PUNCT
ajtas-2341	25	17	pecvd	pecvd	NOUN
ajtas-2341	25	18	)	)	PUNCT
ajtas-2341	25	19	have	have	AUX
ajtas-2341	25	20	allowed	allow	VERB
ajtas-2341	25	21	for	for	ADP
ajtas-2341	25	22	the	the	DET
ajtas-2341	25	23	deposition	deposition	NOUN
ajtas-2341	25	24	of	of	ADP
ajtas-2341	25	25	highly	highly	ADV
ajtas-2341	25	26	uniform	uniform	ADJ
ajtas-2341	25	27	silicon	silicon	NOUN
ajtas-2341	25	28	films	film	NOUN
ajtas-2341	25	29	with	with	ADP
ajtas-2341	25	30	reduced	reduced	ADJ
ajtas-2341	25	31	defect	defect	ADJ
ajtas-2341	25	32	densities	density	NOUN
ajtas-2341	25	33	,	,	PUNCT
ajtas-2341	25	34	thus	thus	ADV
ajtas-2341	25	35	improving	improve	VERB
ajtas-2341	25	36	the	the	DET
ajtas-2341	25	37	thermoelectric	thermoelectric	ADJ
ajtas-2341	25	38	performance	performance	NOUN
ajtas-2341	25	39	of	of	ADP
ajtas-2341	25	40	the	the	DET
ajtas-2341	25	41	p	p	NOUN
ajtas-2341	25	42	-	-	PUNCT
ajtas-2341	25	43	n	n	NOUN
ajtas-2341	25	44	junctions	junction	NOUN
ajtas-2341	25	45	[	[	X
ajtas-2341	25	46	5	5	NUM
ajtas-2341	25	47	]	]	PUNCT
ajtas-2341	25	48	.	.	PUNCT
ajtas-2341	26	1	3	3	X
ajtas-2341	26	2	.	.	X
ajtas-2341	26	3	atomic	atomic	ADJ
ajtas-2341	26	4	layer	layer	NOUN
ajtas-2341	26	5	deposition	deposition	NOUN
ajtas-2341	26	6	(	(	PUNCT
ajtas-2341	26	7	ald	ald	PROPN
ajtas-2341	26	8	)	)	PUNCT
ajtas-2341	26	9	for	for	ADP
ajtas-2341	26	10	interface	interface	NOUN
ajtas-2341	26	11	engineering	engineering	NOUN
ajtas-2341	26	12	atomic	atomic	ADJ
ajtas-2341	26	13	layer	layer	NOUN
ajtas-2341	26	14	deposition	deposition	NOUN
ajtas-2341	26	15	(	(	PUNCT
ajtas-2341	26	16	ald	ald	PROPN
ajtas-2341	26	17	)	)	PUNCT
ajtas-2341	26	18	is	be	AUX
ajtas-2341	26	19	a	a	DET
ajtas-2341	26	20	relatively	relatively	ADV
ajtas-2341	26	21	new	new	ADJ
ajtas-2341	26	22	technique	technique	NOUN
ajtas-2341	26	23	that	that	PRON
ajtas-2341	26	24	offers	offer	VERB
ajtas-2341	26	25	unparalleled	unparalleled	ADJ
ajtas-2341	26	26	control	control	NOUN
ajtas-2341	26	27	over	over	ADP
ajtas-2341	26	28	the	the	DET
ajtas-2341	26	29	thickness	thickness	NOUN
ajtas-2341	26	30	and	and	CCONJ
ajtas-2341	26	31	composition	composition	NOUN
ajtas-2341	26	32	of	of	ADP
ajtas-2341	26	33	epitaxial	epitaxial	ADJ
ajtas-2341	26	34	silicon	silicon	NOUN
ajtas-2341	26	35	layers	layer	NOUN
ajtas-2341	26	36	.	.	PUNCT
ajtas-2341	27	1	ald	ald	PROPN
ajtas-2341	27	2	is	be	AUX
ajtas-2341	27	3	particularly	particularly	ADV
ajtas-2341	27	4	useful	useful	ADJ
ajtas-2341	27	5	for	for	ADP
ajtas-2341	27	6	engineering	engineer	VERB
ajtas-2341	27	7	the	the	DET
ajtas-2341	27	8	interfaces	interface	NOUN
ajtas-2341	27	9	between	between	ADP
ajtas-2341	27	10	the	the	DET
ajtas-2341	27	11	p	p	NOUN
ajtas-2341	27	12	-	-	PUNCT
ajtas-2341	27	13	type	type	NOUN
ajtas-2341	27	14	and	and	CCONJ
ajtas-2341	27	15	n	n	CCONJ
ajtas-2341	27	16	-	-	PUNCT
ajtas-2341	27	17	type	type	NOUN
ajtas-2341	27	18	regions	region	NOUN
ajtas-2341	27	19	,	,	PUNCT
ajtas-2341	27	20	which	which	PRON
ajtas-2341	27	21	play	play	VERB
ajtas-2341	27	22	a	a	DET
ajtas-2341	27	23	critical	critical	ADJ
ajtas-2341	27	24	role	role	NOUN
ajtas-2341	27	25	in	in	ADP
ajtas-2341	27	26	determining	determine	VERB
ajtas-2341	27	27	the	the	DET
ajtas-2341	27	28	efficiency	efficiency	NOUN
ajtas-2341	27	29	of	of	ADP
ajtas-2341	27	30	thermoelectric	thermoelectric	ADJ
ajtas-2341	27	31	devices	device	NOUN
ajtas-2341	27	32	.	.	PUNCT
ajtas-2341	28	1	by	by	ADP
ajtas-2341	28	2	depositing	deposit	VERB
ajtas-2341	28	3	atomic	atomic	ADJ
ajtas-2341	28	4	layers	layer	NOUN
ajtas-2341	28	5	of	of	ADP
ajtas-2341	28	6	silicon	silicon	NOUN
ajtas-2341	28	7	one	one	NUM
ajtas-2341	28	8	at	at	ADP
ajtas-2341	28	9	a	a	DET
ajtas-2341	28	10	time	time	NOUN
ajtas-2341	28	11	,	,	PUNCT
ajtas-2341	28	12	ald	ald	PROPN
ajtas-2341	28	13	allows	allow	VERB
ajtas-2341	28	14	for	for	ADP
ajtas-2341	28	15	the	the	DET
ajtas-2341	28	16	creation	creation	NOUN
ajtas-2341	28	17	of	of	ADP
ajtas-2341	28	18	ultra	ultra	ADJ
ajtas-2341	28	19	-	-	ADJ
ajtas-2341	28	20	thin	thin	ADJ
ajtas-2341	28	21	p	p	NOUN
ajtas-2341	28	22	-	-	PUNCT
ajtas-2341	28	23	n	n	NOUN
ajtas-2341	28	24	junctions	junction	NOUN
ajtas-2341	28	25	with	with	ADP
ajtas-2341	28	26	minimal	minimal	ADJ
ajtas-2341	28	27	defects	defect	NOUN
ajtas-2341	28	28	[	[	X
ajtas-2341	28	29	6	6	NUM
ajtas-2341	28	30	]	]	PUNCT
ajtas-2341	28	31	.	.	PUNCT
ajtas-2341	29	1	moreover	moreover	ADV
ajtas-2341	29	2	,	,	PUNCT
ajtas-2341	29	3	ald	ald	PROPN
ajtas-2341	29	4	enables	enable	VERB
ajtas-2341	29	5	the	the	DET
ajtas-2341	29	6	incorporation	incorporation	NOUN
ajtas-2341	29	7	of	of	ADP
ajtas-2341	29	8	dielectric	dielectric	ADJ
ajtas-2341	29	9	layers	layer	NOUN
ajtas-2341	29	10	at	at	ADP
ajtas-2341	29	11	the	the	DET
ajtas-2341	29	12	interface	interface	NOUN
ajtas-2341	29	13	,	,	PUNCT
ajtas-2341	29	14	which	which	PRON
ajtas-2341	29	15	can	can	AUX
ajtas-2341	29	16	further	far	ADV
ajtas-2341	29	17	enhance	enhance	VERB
ajtas-2341	29	18	the	the	DET
ajtas-2341	29	19	thermoelectric	thermoelectric	ADJ
ajtas-2341	29	20	properties	property	NOUN
ajtas-2341	29	21	of	of	ADP
ajtas-2341	29	22	the	the	DET
ajtas-2341	29	23	device	device	NOUN
ajtas-2341	29	24	by	by	ADP
ajtas-2341	29	25	reducing	reduce	VERB
ajtas-2341	29	26	carrier	carrier	NOUN
ajtas-2341	29	27	recombination	recombination	NOUN
ajtas-2341	29	28	and	and	CCONJ
ajtas-2341	29	29	improving	improve	VERB
ajtas-2341	29	30	american	american	ADJ
ajtas-2341	29	31	journal	journal	NOUN
ajtas-2341	29	32	of	of	ADP
ajtas-2341	29	33	technology	technology	NOUN
ajtas-2341	29	34	and	and	CCONJ
ajtas-2341	29	35	applied	apply	VERB
ajtas-2341	29	36	sciences	science	NOUN
ajtas-2341	29	37	volume	volume	NOUN
ajtas-2341	29	38	28	28	NUM
ajtas-2341	29	39	,	,	PUNCT
ajtas-2341	29	40	september	september	PROPN
ajtas-2341	29	41	2024	2024	NUM
ajtas-2341	29	42	p	p	NOUN
ajtas-2341	29	43	a	a	DET
ajtas-2341	29	44	g	g	NOUN
ajtas-2341	29	45	e	e	NOUN
ajtas-2341	29	46	|	|	ADV
ajtas-2341	29	47	24	24	NUM
ajtas-2341	29	48	www.americanjournal.org	www.americanjournal.org	PROPN
ajtas-2341	29	49	the	the	DET
ajtas-2341	29	50	seebeck	seebeck	NOUN
ajtas-2341	29	51	coefficient	coefficient	PROPN
ajtas-2341	29	52	.	.	PUNCT
ajtas-2341	30	1	this	this	DET
ajtas-2341	30	2	technique	technique	NOUN
ajtas-2341	30	3	has	have	AUX
ajtas-2341	30	4	shown	show	VERB
ajtas-2341	30	5	great	great	ADJ
ajtas-2341	30	6	promise	promise	NOUN
ajtas-2341	30	7	in	in	ADP
ajtas-2341	30	8	improving	improve	VERB
ajtas-2341	30	9	the	the	DET
ajtas-2341	30	10	performance	performance	NOUN
ajtas-2341	30	11	of	of	ADP
ajtas-2341	30	12	silicon	silicon	NOUN
ajtas-2341	30	13	-	-	PUNCT
ajtas-2341	30	14	based	base	VERB
ajtas-2341	30	15	thermoelectric	thermoelectric	ADJ
ajtas-2341	30	16	devices	device	NOUN
ajtas-2341	30	17	,	,	PUNCT
ajtas-2341	30	18	particularly	particularly	ADV
ajtas-2341	30	19	in	in	ADP
ajtas-2341	30	20	applications	application	NOUN
ajtas-2341	30	21	where	where	SCONJ
ajtas-2341	30	22	high	high	ADJ
ajtas-2341	30	23	efficiency	efficiency	NOUN
ajtas-2341	30	24	is	be	AUX
ajtas-2341	30	25	required	require	VERB
ajtas-2341	30	26	[	[	X
ajtas-2341	30	27	7	7	NUM
ajtas-2341	30	28	]	]	PUNCT
ajtas-2341	30	29	.	.	PUNCT
ajtas-2341	31	1	4	4	X
ajtas-2341	31	2	.	.	X
ajtas-2341	31	3	challenges	challenge	NOUN
ajtas-2341	31	4	in	in	ADP
ajtas-2341	31	5	balancing	balance	VERB
ajtas-2341	31	6	electrical	electrical	ADJ
ajtas-2341	31	7	and	and	CCONJ
ajtas-2341	31	8	thermal	thermal	ADJ
ajtas-2341	31	9	conductivity	conductivity	NOUN
ajtas-2341	31	10	for	for	ADP
ajtas-2341	31	11	the	the	DET
ajtas-2341	31	12	semiconductors	semiconductor	NOUN
ajtas-2341	31	13	with	with	ADP
ajtas-2341	31	14	one	one	NUM
ajtas-2341	31	15	type	type	NOUN
ajtas-2341	31	16	of	of	ADP
ajtas-2341	31	17	charge	charge	NOUN
ajtas-2341	31	18	carriers	carrier	NOUN
ajtas-2341	31	19	,	,	PUNCT
ajtas-2341	31	20	the	the	DET
ajtas-2341	31	21	thermoelectric	thermoelectric	ADJ
ajtas-2341	31	22	efficiency	efficiency	NOUN
ajtas-2341	31	23	is	be	AUX
ajtas-2341	31	24	determined	determine	VERB
ajtas-2341	31	25	by	by	ADP
ajtas-2341	31	26	the	the	DET
ajtas-2341	31	27	expression	expression	NOUN
ajtas-2341	31	28	[	[	X
ajtas-2341	31	29	3	3	NUM
ajtas-2341	31	30	]	]	PUNCT
ajtas-2341	31	31	:	:	PUNCT
ajtas-2341	31	32	:	:	PUNCT
ajtas-2341	31	33	𝑍	𝑍	PROPN
ajtas-2341	31	34	=	=	SYM
ajtas-2341	31	35	𝛼2𝜎	𝛼2𝜎	NUM
ajtas-2341	31	36	𝜒	𝜒	X
ajtas-2341	31	37	(	(	PUNCT
ajtas-2341	31	38	1	1	NUM
ajtas-2341	31	39	)	)	PUNCT
ajtas-2341	31	40	where	where	SCONJ
ajtas-2341	31	41			NOUN
ajtas-2341	31	42	is	be	AUX
ajtas-2341	31	43	the	the	DET
ajtas-2341	31	44	seebeck	seebeck	PROPN
ajtas-2341	31	45	coefficient	coefficient	NOUN
ajtas-2341	31	46	(	(	PUNCT
ajtas-2341	31	47	specific	specific	ADJ
ajtas-2341	31	48	thermoemf	thermoemf	NOUN
ajtas-2341	31	49	,	,	PUNCT
ajtas-2341	31	50	μv	μv	PROPN
ajtas-2341	31	51	/	/	SYM
ajtas-2341	31	52	k	k	NOUN
ajtas-2341	31	53	)	)	PUNCT
ajtas-2341	31	54	,	,	PUNCT
ajtas-2341	31	55	χ	χ	X
ajtas-2341	31	56	is	be	AUX
ajtas-2341	31	57	the	the	DET
ajtas-2341	31	58	thermal	thermal	ADJ
ajtas-2341	31	59	conductivity	conductivity	NOUN
ajtas-2341	31	60	coefficient	coefficient	NOUN
ajtas-2341	31	61	(	(	PUNCT
ajtas-2341	31	62	w	w	NOUN
ajtas-2341	31	63	/	/	SYM
ajtas-2341	31	64	m*k	m*k	PROPN
ajtas-2341	31	65	)	)	PUNCT
ajtas-2341	31	66	,	,	PUNCT
ajtas-2341	31	67			PROPN
ajtas-2341	31	68	is	be	AUX
ajtas-2341	31	69	the	the	DET
ajtas-2341	31	70	specific	specific	ADJ
ajtas-2341	31	71	electrical	electrical	ADJ
ajtas-2341	31	72	conductivity	conductivity	NOUN
ajtas-2341	31	73	(	(	PUNCT
ajtas-2341	31	74	ω-1*cm-1	ω-1*cm-1	NOUN
ajtas-2341	31	75	)	)	PUNCT
ajtas-2341	31	76	.	.	PUNCT
ajtas-2341	32	1	these	these	DET
ajtas-2341	32	2	three	three	NUM
ajtas-2341	32	3	values	value	NOUN
ajtas-2341	32	4	are	be	AUX
ajtas-2341	32	5	the	the	DET
ajtas-2341	32	6	most	most	ADV
ajtas-2341	32	7	important	important	ADJ
ajtas-2341	32	8	thermoelectric	thermoelectric	ADJ
ajtas-2341	32	9	parameters	parameter	NOUN
ajtas-2341	32	10	characterizing	characterize	VERB
ajtas-2341	32	11	a	a	DET
ajtas-2341	32	12	particular	particular	ADJ
ajtas-2341	32	13	thermoelectric	thermoelectric	ADJ
ajtas-2341	32	14	material	material	NOUN
ajtas-2341	32	15	and	and	CCONJ
ajtas-2341	32	16	in	in	ADP
ajtas-2341	32	17	this	this	DET
ajtas-2341	32	18	regard	regard	NOUN
ajtas-2341	32	19	are	be	AUX
ajtas-2341	32	20	the	the	DET
ajtas-2341	32	21	objects	object	NOUN
ajtas-2341	32	22	of	of	ADP
ajtas-2341	32	23	research	research	NOUN
ajtas-2341	32	24	and	and	CCONJ
ajtas-2341	32	25	technological	technological	ADJ
ajtas-2341	32	26	impact	impact	NOUN
ajtas-2341	32	27	aimed	aim	VERB
ajtas-2341	32	28	at	at	ADP
ajtas-2341	32	29	increasing	increase	VERB
ajtas-2341	32	30	(	(	PUNCT
ajtas-2341	32	31			NOUN
ajtas-2341	32	32	)	)	PUNCT
ajtas-2341	32	33	,	,	PUNCT
ajtas-2341	32	34	decreasing	decrease	VERB
ajtas-2341	32	35	thermal	thermal	ADJ
ajtas-2341	32	36	conductivity	conductivity	NOUN
ajtas-2341	32	37	(	(	PUNCT
ajtas-2341	32	38	χ	χ	X
ajtas-2341	32	39	)	)	PUNCT
ajtas-2341	32	40	with	with	ADP
ajtas-2341	32	41	increasing	increase	VERB
ajtas-2341	32	42	electrical	electrical	ADJ
ajtas-2341	32	43	conductivity	conductivity	NOUN
ajtas-2341	32	44	(	(	PUNCT
ajtas-2341	32	45			NUM
ajtas-2341	32	46	)	)	PUNCT
ajtas-2341	32	47	of	of	ADP
ajtas-2341	32	48	a	a	DET
ajtas-2341	32	49	thermoelectric	thermoelectric	ADJ
ajtas-2341	32	50	material	material	NOUN
ajtas-2341	32	51	.	.	PUNCT
ajtas-2341	33	1	hence	hence	ADV
ajtas-2341	33	2	,	,	PUNCT
ajtas-2341	33	3	one	one	NUM
ajtas-2341	33	4	of	of	ADP
ajtas-2341	33	5	the	the	DET
ajtas-2341	33	6	fundamental	fundamental	ADJ
ajtas-2341	33	7	challenges	challenge	NOUN
ajtas-2341	33	8	in	in	ADP
ajtas-2341	33	9	optimizing	optimize	VERB
ajtas-2341	33	10	epitaxial	epitaxial	ADJ
ajtas-2341	33	11	silicon	silicon	NOUN
ajtas-2341	33	12	p	p	PROPN
ajtas-2341	33	13	-	-	PUNCT
ajtas-2341	33	14	n	n	NOUN
ajtas-2341	33	15	junctions	junction	NOUN
ajtas-2341	33	16	for	for	ADP
ajtas-2341	33	17	thermoelectric	thermoelectric	ADJ
ajtas-2341	33	18	applications	application	NOUN
ajtas-2341	33	19	is	be	AUX
ajtas-2341	33	20	balancing	balance	VERB
ajtas-2341	33	21	electrical	electrical	ADJ
ajtas-2341	33	22	conductivity	conductivity	NOUN
ajtas-2341	33	23	with	with	ADP
ajtas-2341	33	24	thermal	thermal	ADJ
ajtas-2341	33	25	conductivity	conductivity	NOUN
ajtas-2341	33	26	.	.	PUNCT
ajtas-2341	34	1	high	high	ADJ
ajtas-2341	34	2	electrical	electrical	ADJ
ajtas-2341	34	3	conductivity	conductivity	NOUN
ajtas-2341	34	4	is	be	AUX
ajtas-2341	34	5	essential	essential	ADJ
ajtas-2341	34	6	for	for	ADP
ajtas-2341	34	7	efficient	efficient	ADJ
ajtas-2341	34	8	charge	charge	NOUN
ajtas-2341	34	9	transport	transport	NOUN
ajtas-2341	34	10	,	,	PUNCT
ajtas-2341	34	11	while	while	SCONJ
ajtas-2341	34	12	low	low	ADJ
ajtas-2341	34	13	thermal	thermal	ADJ
ajtas-2341	34	14	conductivity	conductivity	NOUN
ajtas-2341	34	15	is	be	AUX
ajtas-2341	34	16	required	require	VERB
ajtas-2341	34	17	to	to	PART
ajtas-2341	34	18	maintain	maintain	VERB
ajtas-2341	34	19	a	a	DET
ajtas-2341	34	20	temperature	temperature	NOUN
ajtas-2341	34	21	gradient	gradient	NOUN
ajtas-2341	34	22	across	across	ADP
ajtas-2341	34	23	the	the	DET
ajtas-2341	34	24	device	device	NOUN
ajtas-2341	34	25	.	.	PUNCT
ajtas-2341	35	1	achieving	achieve	VERB
ajtas-2341	35	2	this	this	DET
ajtas-2341	35	3	balance	balance	NOUN
ajtas-2341	35	4	requires	require	VERB
ajtas-2341	35	5	careful	careful	ADJ
ajtas-2341	35	6	optimization	optimization	NOUN
ajtas-2341	35	7	of	of	ADP
ajtas-2341	35	8	the	the	DET
ajtas-2341	35	9	doping	doping	NOUN
ajtas-2341	35	10	profile	profile	NOUN
ajtas-2341	35	11	,	,	PUNCT
ajtas-2341	35	12	as	as	ADV
ajtas-2341	35	13	well	well	ADV
ajtas-2341	35	14	as	as	ADP
ajtas-2341	35	15	the	the	DET
ajtas-2341	35	16	introduction	introduction	NOUN
ajtas-2341	35	17	of	of	ADP
ajtas-2341	35	18	nanostructures	nanostructure	NOUN
ajtas-2341	35	19	to	to	PART
ajtas-2341	35	20	scatter	scatter	VERB
ajtas-2341	35	21	phonons	phonon	NOUN
ajtas-2341	35	22	and	and	CCONJ
ajtas-2341	35	23	reduce	reduce	VERB
ajtas-2341	35	24	thermal	thermal	ADJ
ajtas-2341	35	25	transport	transport	NOUN
ajtas-2341	35	26	[	[	X
ajtas-2341	35	27	3	3	NUM
ajtas-2341	35	28	]	]	X
ajtas-2341	35	29	recent	recent	ADJ
ajtas-2341	35	30	research	research	NOUN
ajtas-2341	35	31	has	have	AUX
ajtas-2341	35	32	focused	focus	VERB
ajtas-2341	35	33	on	on	ADP
ajtas-2341	35	34	the	the	DET
ajtas-2341	35	35	use	use	NOUN
ajtas-2341	35	36	of	of	ADP
ajtas-2341	35	37	nanostructured	nanostructure	VERB
ajtas-2341	35	38	silicon	silicon	NOUN
ajtas-2341	35	39	films	film	NOUN
ajtas-2341	35	40	,	,	PUNCT
ajtas-2341	35	41	where	where	SCONJ
ajtas-2341	35	42	periodic	periodic	ADJ
ajtas-2341	35	43	nanostructures	nanostructure	NOUN
ajtas-2341	35	44	are	be	AUX
ajtas-2341	35	45	introduced	introduce	VERB
ajtas-2341	35	46	to	to	PART
ajtas-2341	35	47	scatter	scatter	VERB
ajtas-2341	35	48	phonons	phonon	NOUN
ajtas-2341	35	49	and	and	CCONJ
ajtas-2341	35	50	reduce	reduce	VERB
ajtas-2341	35	51	thermal	thermal	ADJ
ajtas-2341	35	52	conductivity	conductivity	NOUN
ajtas-2341	35	53	without	without	ADP
ajtas-2341	35	54	significantly	significantly	ADV
ajtas-2341	35	55	affecting	affect	VERB
ajtas-2341	35	56	electrical	electrical	ADJ
ajtas-2341	35	57	conductivity	conductivity	NOUN
ajtas-2341	35	58	.	.	PUNCT
ajtas-2341	36	1	these	these	DET
ajtas-2341	36	2	nanostructures	nanostructure	NOUN
ajtas-2341	36	3	can	can	AUX
ajtas-2341	36	4	be	be	AUX
ajtas-2341	36	5	incorporated	incorporate	VERB
ajtas-2341	36	6	during	during	ADP
ajtas-2341	36	7	the	the	DET
ajtas-2341	36	8	epitaxial	epitaxial	ADJ
ajtas-2341	36	9	growth	growth	NOUN
ajtas-2341	36	10	process	process	NOUN
ajtas-2341	36	11	using	use	VERB
ajtas-2341	36	12	techniques	technique	NOUN
ajtas-2341	36	13	such	such	ADJ
ajtas-2341	36	14	as	as	ADP
ajtas-2341	36	15	mbe	mbe	PROPN
ajtas-2341	36	16	or	or	CCONJ
ajtas-2341	36	17	ald	ald	PROPN
ajtas-2341	36	18	,	,	PUNCT
ajtas-2341	36	19	allowing	allow	VERB
ajtas-2341	36	20	for	for	ADP
ajtas-2341	36	21	the	the	DET
ajtas-2341	36	22	creation	creation	NOUN
ajtas-2341	36	23	of	of	ADP
ajtas-2341	36	24	high	high	ADJ
ajtas-2341	36	25	-	-	PUNCT
ajtas-2341	36	26	efficiency	efficiency	NOUN
ajtas-2341	36	27	thermoelectric	thermoelectric	ADJ
ajtas-2341	36	28	devices	device	NOUN
ajtas-2341	36	29	[	[	X
ajtas-2341	36	30	8	8	NUM
ajtas-2341	36	31	]	]	SYM
ajtas-2341	36	32	.	.	PUNCT
ajtas-2341	37	1	5	5	X
ajtas-2341	37	2	.	.	X
ajtas-2341	37	3	ion	ion	NOUN
ajtas-2341	37	4	-	-	PUNCT
ajtas-2341	37	5	stimulated	stimulate	VERB
ajtas-2341	37	6	vacuum	vacuum	NOUN
ajtas-2341	37	7	deposition	deposition	NOUN
ajtas-2341	37	8	(	(	PUNCT
ajtas-2341	37	9	isvd	isvd	NOUN
ajtas-2341	37	10	)	)	PUNCT
ajtas-2341	37	11	.	.	PUNCT
ajtas-2341	38	1	to	to	PART
ajtas-2341	38	2	create	create	VERB
ajtas-2341	38	3	thermal	thermal	ADJ
ajtas-2341	38	4	energy	energy	NOUN
ajtas-2341	38	5	converters	converter	NOUN
ajtas-2341	38	6	,	,	PUNCT
ajtas-2341	38	7	it	it	PRON
ajtas-2341	38	8	is	be	AUX
ajtas-2341	38	9	advisable	advisable	ADJ
ajtas-2341	38	10	to	to	PART
ajtas-2341	38	11	use	use	VERB
ajtas-2341	38	12	molecular	molecular	ADJ
ajtas-2341	38	13	-	-	PUNCT
ajtas-2341	38	14	ionic	ionic	ADJ
ajtas-2341	38	15	technologies	technology	NOUN
ajtas-2341	38	16	,	,	PUNCT
ajtas-2341	38	17	since	since	SCONJ
ajtas-2341	38	18	they	they	PRON
ajtas-2341	38	19	most	most	ADV
ajtas-2341	38	20	easily	easily	ADV
ajtas-2341	38	21	provide	provide	VERB
ajtas-2341	38	22	control	control	NOUN
ajtas-2341	38	23	over	over	ADP
ajtas-2341	38	24	the	the	DET
ajtas-2341	38	25	parameters	parameter	NOUN
ajtas-2341	38	26	of	of	ADP
ajtas-2341	38	27	the	the	DET
ajtas-2341	38	28	growing	grow	VERB
ajtas-2341	38	29	silicon	silicon	NOUN
ajtas-2341	38	30	structures	structure	NOUN
ajtas-2341	38	31	.	.	PUNCT
ajtas-2341	39	1	studies	study	NOUN
ajtas-2341	39	2	of	of	ADP
ajtas-2341	39	3	silicon	silicon	NOUN
ajtas-2341	39	4	pn	pn	PROPN
ajtas-2341	39	5	film	film	NOUN
ajtas-2341	39	6	structures	structure	NOUN
ajtas-2341	39	7	obtained	obtain	VERB
ajtas-2341	39	8	by	by	ADP
ajtas-2341	39	9	ion	ion	NOUN
ajtas-2341	39	10	-	-	PUNCT
ajtas-2341	39	11	stimulated	stimulate	VERB
ajtas-2341	39	12	thermal	thermal	ADJ
ajtas-2341	39	13	deposition	deposition	NOUN
ajtas-2341	39	14	in	in	ADP
ajtas-2341	39	15	vacuum	vacuum	NOUN
ajtas-2341	39	16	show	show	NOUN
ajtas-2341	39	17	[	[	X
ajtas-2341	39	18	9	9	NUM
ajtas-2341	39	19	]	]	PUNCT
ajtas-2341	39	20	that	that	SCONJ
ajtas-2341	39	21	under	under	ADP
ajtas-2341	39	22	uniform	uniform	NOUN
ajtas-2341	39	23	heating	heating	NOUN
ajtas-2341	39	24	in	in	ADP
ajtas-2341	39	25	the	the	DET
ajtas-2341	39	26	absence	absence	NOUN
ajtas-2341	39	27	of	of	ADP
ajtas-2341	39	28	the	the	DET
ajtas-2341	39	29	visible	visible	ADJ
ajtas-2341	39	30	temperature	temperature	NOUN
ajtas-2341	39	31	gradient	gradient	NOUN
ajtas-2341	39	32	,	,	PUNCT
ajtas-2341	39	33	a	a	DET
ajtas-2341	39	34	dark	dark	ADJ
ajtas-2341	39	35	open	open	ADJ
ajtas-2341	39	36	-	-	PUNCT
ajtas-2341	39	37	circuit	circuit	NOUN
ajtas-2341	39	38	voltage	voltage	NOUN
ajtas-2341	39	39	arises	arise	VERB
ajtas-2341	39	40	on	on	ADP
ajtas-2341	39	41	these	these	DET
ajtas-2341	39	42	film	film	NOUN
ajtas-2341	39	43	structures	structure	NOUN
ajtas-2341	39	44	and	and	CCONJ
ajtas-2341	39	45	efficient	efficient	ADJ
ajtas-2341	39	46	generation	generation	NOUN
ajtas-2341	39	47	of	of	ADP
ajtas-2341	39	48	carriers	carrier	NOUN
ajtas-2341	39	49	occurs	occur	VERB
ajtas-2341	39	50	,	,	PUNCT
ajtas-2341	39	51	which	which	PRON
ajtas-2341	39	52	can	can	AUX
ajtas-2341	39	53	be	be	AUX
ajtas-2341	39	54	used	use	VERB
ajtas-2341	39	55	to	to	PART
ajtas-2341	39	56	create	create	VERB
ajtas-2341	39	57	efficient	efficient	ADJ
ajtas-2341	39	58	converters	converter	NOUN
ajtas-2341	39	59	of	of	ADP
ajtas-2341	39	60	thermal	thermal	ADJ
ajtas-2341	39	61	energy	energy	NOUN
ajtas-2341	39	62	into	into	ADP
ajtas-2341	39	63	electrical	electrical	ADJ
ajtas-2341	39	64	energy	energy	NOUN
ajtas-2341	39	65	,	,	PUNCT
ajtas-2341	39	66	including	include	VERB
ajtas-2341	39	67	the	the	DET
ajtas-2341	39	68	non	non	ADJ
ajtas-2341	39	69	-	-	ADJ
ajtas-2341	39	70	photoactive	photoactive	ADJ
ajtas-2341	39	71	component	component	NOUN
ajtas-2341	39	72	of	of	ADP
ajtas-2341	39	73	solar	solar	ADJ
ajtas-2341	39	74	radiation	radiation	NOUN
ajtas-2341	39	75	.	.	PUNCT
ajtas-2341	40	1	it	it	PRON
ajtas-2341	40	2	is	be	AUX
ajtas-2341	40	3	important	important	ADJ
ajtas-2341	40	4	to	to	PART
ajtas-2341	40	5	determine	determine	VERB
ajtas-2341	40	6	the	the	DET
ajtas-2341	40	7	enhancement	enhancement	NOUN
ajtas-2341	40	8	of	of	ADP
ajtas-2341	40	9	thermoelectric	thermoelectric	ADJ
ajtas-2341	40	10	and	and	CCONJ
ajtas-2341	40	11	thermal	thermal	ADJ
ajtas-2341	40	12	-	-	PUNCT
ajtas-2341	40	13	voltaic	voltaic	ADJ
ajtas-2341	40	14	properties	property	NOUN
ajtas-2341	40	15	of	of	ADP
ajtas-2341	40	16	semiconductor	semiconductor	NOUN
ajtas-2341	40	17	films	film	NOUN
ajtas-2341	40	18	directly	directly	ADV
ajtas-2341	40	19	in	in	ADP
ajtas-2341	40	20	the	the	DET
ajtas-2341	40	21	process	process	NOUN
ajtas-2341	40	22	of	of	ADP
ajtas-2341	40	23	their	their	PRON
ajtas-2341	40	24	growth	growth	NOUN
ajtas-2341	40	25	due	due	ADP
ajtas-2341	40	26	to	to	ADP
ajtas-2341	40	27	the	the	DET
ajtas-2341	40	28	creation	creation	NOUN
ajtas-2341	40	29	of	of	ADP
ajtas-2341	40	30	structural	structural	ADJ
ajtas-2341	40	31	defects	defect	NOUN
ajtas-2341	40	32	by	by	ADP
ajtas-2341	40	33	the	the	DET
ajtas-2341	40	34	ionic	ionic	ADJ
ajtas-2341	40	35	component	component	NOUN
ajtas-2341	40	36	of	of	ADP
ajtas-2341	40	37	deposition	deposition	NOUN
ajtas-2341	40	38	.	.	PUNCT
ajtas-2341	41	1	it	it	PRON
ajtas-2341	41	2	is	be	AUX
ajtas-2341	41	3	determined	determine	VERB
ajtas-2341	41	4	that	that	SCONJ
ajtas-2341	41	5	the	the	DET
ajtas-2341	41	6	presence	presence	NOUN
ajtas-2341	41	7	of	of	ADP
ajtas-2341	41	8	ionized	ionized	ADJ
ajtas-2341	41	9	component	component	NOUN
ajtas-2341	41	10	in	in	ADP
ajtas-2341	41	11	the	the	DET
ajtas-2341	41	12	deposited	deposit	VERB
ajtas-2341	41	13	material	material	NOUN
ajtas-2341	41	14	enhances	enhance	VERB
ajtas-2341	41	15	the	the	DET
ajtas-2341	41	16	generation	generation	NOUN
ajtas-2341	41	17	processes	process	NOUN
ajtas-2341	41	18	in	in	ADP
ajtas-2341	41	19	view	view	NOUN
ajtas-2341	41	20	of	of	ADP
ajtas-2341	41	21	the	the	DET
ajtas-2341	41	22	creation	creation	NOUN
ajtas-2341	41	23	of	of	ADP
ajtas-2341	41	24	deep	deep	ADJ
ajtas-2341	41	25	defect	defect	NOUN
ajtas-2341	41	26	levels	level	NOUN
ajtas-2341	41	27	in	in	ADP
ajtas-2341	41	28	film	film	NOUN
ajtas-2341	41	29	structures	structure	NOUN
ajtas-2341	41	30	[	[	X
ajtas-2341	41	31	10	10	NUM
ajtas-2341	41	32	]	]	PUNCT
ajtas-2341	41	33	.	.	PUNCT
ajtas-2341	42	1	to	to	PART
ajtas-2341	42	2	find	find	VERB
ajtas-2341	42	3	the	the	DET
ajtas-2341	42	4	optimal	optimal	ADJ
ajtas-2341	42	5	conditions	condition	NOUN
ajtas-2341	42	6	for	for	ADP
ajtas-2341	42	7	obtaining	obtain	VERB
ajtas-2341	42	8	semiconductor	semiconductor	NOUN
ajtas-2341	42	9	films	film	NOUN
ajtas-2341	42	10	from	from	ADP
ajtas-2341	42	11	partially	partially	ADV
ajtas-2341	42	12	ionized	ionize	VERB
ajtas-2341	42	13	flows	flow	NOUN
ajtas-2341	42	14	,	,	PUNCT
ajtas-2341	42	15	it	it	PRON
ajtas-2341	42	16	is	be	AUX
ajtas-2341	42	17	necessary	necessary	ADJ
ajtas-2341	42	18	to	to	PART
ajtas-2341	42	19	determine	determine	VERB
ajtas-2341	42	20	the	the	DET
ajtas-2341	42	21	corresponding	corresponding	ADJ
ajtas-2341	42	22	parameters	parameter	NOUN
ajtas-2341	42	23	of	of	ADP
ajtas-2341	42	24	ion	ion	NOUN
ajtas-2341	42	25	irradiation	irradiation	NOUN
ajtas-2341	42	26	,	,	PUNCT
ajtas-2341	42	27	primarily	primarily	ADV
ajtas-2341	42	28	the	the	DET
ajtas-2341	42	29	energy	energy	NOUN
ajtas-2341	42	30	of	of	ADP
ajtas-2341	42	31	bombarding	bombard	VERB
ajtas-2341	42	32	particles	particle	NOUN
ajtas-2341	42	33	.	.	PUNCT
ajtas-2341	43	1	thus	thus	ADV
ajtas-2341	43	2	,	,	PUNCT
ajtas-2341	43	3	ion	ion	NOUN
ajtas-2341	43	4	-	-	PUNCT
ajtas-2341	43	5	assisted	assist	VERB
ajtas-2341	43	6	vacuum	vacuum	NOUN
ajtas-2341	43	7	deposition	deposition	NOUN
ajtas-2341	43	8	can	can	AUX
ajtas-2341	43	9	serve	serve	VERB
ajtas-2341	43	10	as	as	ADP
ajtas-2341	43	11	an	an	DET
ajtas-2341	43	12	effective	effective	ADJ
ajtas-2341	43	13	method	method	NOUN
ajtas-2341	43	14	for	for	ADP
ajtas-2341	43	15	obtaining	obtain	VERB
ajtas-2341	43	16	epitaxial	epitaxial	ADJ
ajtas-2341	43	17	film	film	NOUN
ajtas-2341	43	18	ssilicon	ssilicon	NOUN
ajtas-2341	43	19	structures	structure	NOUN
ajtas-2341	43	20	for	for	ADP
ajtas-2341	43	21	the	the	DET
ajtas-2341	43	22	creation	creation	NOUN
ajtas-2341	43	23	of	of	ADP
ajtas-2341	43	24	thermal	thermal	ADJ
ajtas-2341	43	25	energy	energy	NOUN
ajtas-2341	43	26	converters	converter	NOUN
ajtas-2341	43	27	into	into	ADP
ajtas-2341	43	28	electrical	electrical	ADJ
ajtas-2341	43	29	energy	energy	NOUN
ajtas-2341	43	30	on	on	ADP
ajtas-2341	43	31	their	their	PRON
ajtas-2341	43	32	basis	basis	NOUN
ajtas-2341	43	33	,	,	PUNCT
ajtas-2341	43	34	capable	capable	ADJ
ajtas-2341	43	35	of	of	ADP
ajtas-2341	43	36	operating	operate	VERB
ajtas-2341	43	37	in	in	ADP
ajtas-2341	43	38	the	the	DET
ajtas-2341	43	39	region	region	NOUN
ajtas-2341	43	40	of	of	ADP
ajtas-2341	43	41	sufficiently	sufficiently	ADV
ajtas-2341	43	42	high	high	ADJ
ajtas-2341	43	43	temperatures	temperature	NOUN
ajtas-2341	43	44	.	.	PUNCT
ajtas-2341	44	1	it	it	PRON
ajtas-2341	44	2	is	be	AUX
ajtas-2341	44	3	shown	show	VERB
ajtas-2341	44	4	[	[	PUNCT
ajtas-2341	44	5	11	11	NUM
ajtas-2341	44	6	]	]	PUNCT
ajtas-2341	44	7	that	that	SCONJ
ajtas-2341	44	8	ion	ion	NOUN
ajtas-2341	44	9	treatment	treatment	NOUN
ajtas-2341	44	10	of	of	ADP
ajtas-2341	44	11	the	the	DET
ajtas-2341	44	12	surfaces	surface	NOUN
ajtas-2341	44	13	of	of	ADP
ajtas-2341	44	14	p	p	PROPN
ajtas-2341	44	15	-	-	PUNCT
ajtas-2341	44	16	n	n	CCONJ
ajtas-2341	44	17	standard	standard	ADJ
ajtas-2341	44	18	epitaxial	epitaxial	ADJ
ajtas-2341	44	19	si	si	NOUN
ajtas-2341	44	20	/	/	SYM
ajtas-2341	44	21	si	si	X
ajtas-2341	44	22	film	film	NOUN
ajtas-2341	44	23	structures	structure	NOUN
ajtas-2341	44	24	and	and	CCONJ
ajtas-2341	44	25	sige	sige	ADJ
ajtas-2341	44	26	/	/	SYM
ajtas-2341	44	27	si	si	PROPN
ajtas-2341	44	28	structures	structure	NOUN
ajtas-2341	44	29	obtained	obtain	VERB
ajtas-2341	44	30	by	by	ADP
ajtas-2341	44	31	gas	gas	NOUN
ajtas-2341	44	32	-	-	PUNCT
ajtas-2341	44	33	phase	phase	NOUN
ajtas-2341	44	34	epitaxy	epitaxy	NOUN
ajtas-2341	44	35	leads	lead	VERB
ajtas-2341	44	36	to	to	ADP
ajtas-2341	44	37	an	an	DET
ajtas-2341	44	38	increase	increase	NOUN
ajtas-2341	44	39	in	in	ADP
ajtas-2341	44	40	short	short	ADJ
ajtas-2341	44	41	-	-	PUNCT
ajtas-2341	44	42	circuit	circuit	NOUN
ajtas-2341	44	43	current	current	NOUN
ajtas-2341	44	44	in	in	ADP
ajtas-2341	44	45	the	the	DET
ajtas-2341	44	46	american	american	ADJ
ajtas-2341	44	47	journal	journal	PROPN
ajtas-2341	44	48	of	of	ADP
ajtas-2341	44	49	technology	technology	NOUN
ajtas-2341	44	50	and	and	CCONJ
ajtas-2341	44	51	applied	apply	VERB
ajtas-2341	44	52	sciences	science	NOUN
ajtas-2341	44	53	volume	volume	NOUN
ajtas-2341	44	54	28	28	NUM
ajtas-2341	44	55	,	,	PUNCT
ajtas-2341	44	56	september	september	PROPN
ajtas-2341	44	57	2024	2024	NUM
ajtas-2341	45	1	p	p	NOUN
ajtas-2341	45	2	a	a	DET
ajtas-2341	45	3	g	g	NOUN
ajtas-2341	45	4	e	e	NOUN
ajtas-2341	45	5	|	|	NOUN
ajtas-2341	45	6	25	25	NUM
ajtas-2341	45	7	www.americanjournal.org	www.americanjournal.org	NOUN
ajtas-2341	45	8	temperature	temperature	NOUN
ajtas-2341	45	9	range	range	NOUN
ajtas-2341	45	10	of	of	ADP
ajtas-2341	45	11	400–700	400–700	NUM
ajtas-2341	45	12	k.	k.	NOUN
ajtas-2341	45	13	this	this	DET
ajtas-2341	45	14	increase	increase	NOUN
ajtas-2341	45	15	is	be	AUX
ajtas-2341	45	16	explained	explain	VERB
ajtas-2341	45	17	by	by	ADP
ajtas-2341	45	18	the	the	DET
ajtas-2341	45	19	formation	formation	NOUN
ajtas-2341	45	20	of	of	ADP
ajtas-2341	45	21	defects	defect	NOUN
ajtas-2341	45	22	in	in	ADP
ajtas-2341	45	23	the	the	DET
ajtas-2341	45	24	structure	structure	NOUN
ajtas-2341	45	25	of	of	ADP
ajtas-2341	45	26	the	the	DET
ajtas-2341	45	27	film	film	NOUN
ajtas-2341	45	28	by	by	ADP
ajtas-2341	45	29	bombarding	bombard	VERB
ajtas-2341	45	30	ions	ion	NOUN
ajtas-2341	45	31	,	,	PUNCT
ajtas-2341	45	32	which	which	PRON
ajtas-2341	45	33	are	be	AUX
ajtas-2341	45	34	responsible	responsible	ADJ
ajtas-2341	45	35	for	for	ADP
ajtas-2341	45	36	the	the	DET
ajtas-2341	45	37	generation	generation	NOUN
ajtas-2341	45	38	of	of	ADP
ajtas-2341	45	39	charge	charge	NOUN
ajtas-2341	45	40	carriers	carrier	NOUN
ajtas-2341	45	41	during	during	ADP
ajtas-2341	45	42	heating	heating	NOUN
ajtas-2341	45	43	.	.	PUNCT
ajtas-2341	46	1	these	these	DET
ajtas-2341	46	2	results	result	NOUN
ajtas-2341	46	3	indicate	indicate	VERB
ajtas-2341	46	4	on	on	ADP
ajtas-2341	46	5	the	the	DET
ajtas-2341	46	6	possibility	possibility	NOUN
ajtas-2341	46	7	of	of	ADP
ajtas-2341	46	8	using	use	VERB
ajtas-2341	46	9	of	of	ADP
ajtas-2341	46	10	ion	ion	NOUN
ajtas-2341	46	11	treatment	treatment	NOUN
ajtas-2341	46	12	of	of	ADP
ajtas-2341	46	13	surfaces	surface	NOUN
ajtas-2341	46	14	of	of	ADP
ajtas-2341	46	15	semiconductor	semiconductor	NOUN
ajtas-2341	46	16	material	material	NOUN
ajtas-2341	46	17	films	film	NOUN
ajtas-2341	46	18	for	for	ADP
ajtas-2341	46	19	the	the	DET
ajtas-2341	46	20	creation	creation	NOUN
ajtas-2341	46	21	of	of	ADP
ajtas-2341	46	22	thermal	thermal	ADJ
ajtas-2341	46	23	converters	converter	NOUN
ajtas-2341	46	24	operating	operate	VERB
ajtas-2341	46	25	at	at	ADP
ajtas-2341	46	26	high	high	ADJ
ajtas-2341	46	27	temperatures	temperature	NOUN
ajtas-2341	46	28	,	,	PUNCT
ajtas-2341	46	29	including	include	VERB
ajtas-2341	46	30	the	the	DET
ajtas-2341	46	31	case	case	NOUN
ajtas-2341	46	32	of	of	ADP
ajtas-2341	46	33	radiation	radiation	NOUN
ajtas-2341	46	34	action	action	NOUN
ajtas-2341	46	35	.	.	PUNCT
ajtas-2341	47	1	conclusion	conclusion	NOUN
ajtas-2341	47	2	:	:	PUNCT
ajtas-2341	47	3	the	the	DET
ajtas-2341	47	4	advancements	advancement	NOUN
ajtas-2341	47	5	in	in	ADP
ajtas-2341	47	6	fabrication	fabrication	NOUN
ajtas-2341	47	7	techniques	technique	NOUN
ajtas-2341	47	8	for	for	ADP
ajtas-2341	47	9	epitaxial	epitaxial	ADJ
ajtas-2341	47	10	silicon	silicon	NOUN
ajtas-2341	47	11	p	p	PROPN
ajtas-2341	47	12	-	-	PUNCT
ajtas-2341	47	13	n	n	NOUN
ajtas-2341	47	14	structures	structure	NOUN
ajtas-2341	47	15	have	have	AUX
ajtas-2341	47	16	opened	open	VERB
ajtas-2341	47	17	new	new	ADJ
ajtas-2341	47	18	possibilities	possibility	NOUN
ajtas-2341	47	19	for	for	ADP
ajtas-2341	47	20	enhancing	enhance	VERB
ajtas-2341	47	21	the	the	DET
ajtas-2341	47	22	efficiency	efficiency	NOUN
ajtas-2341	47	23	of	of	ADP
ajtas-2341	47	24	thermoelectric	thermoelectric	ADJ
ajtas-2341	47	25	devices	device	NOUN
ajtas-2341	47	26	.	.	PUNCT
ajtas-2341	48	1	molecular	molecular	ADJ
ajtas-2341	48	2	beam	beam	NOUN
ajtas-2341	48	3	epitaxy	epitaxy	PROPN
ajtas-2341	48	4	(	(	PUNCT
ajtas-2341	48	5	mbe	mbe	PROPN
ajtas-2341	48	6	)	)	PUNCT
ajtas-2341	48	7	,	,	PUNCT
ajtas-2341	48	8	chemical	chemical	NOUN
ajtas-2341	48	9	vapor	vapor	NOUN
ajtas-2341	48	10	deposition	deposition	NOUN
ajtas-2341	48	11	(	(	PUNCT
ajtas-2341	48	12	cvd	cvd	PROPN
ajtas-2341	48	13	)	)	PUNCT
ajtas-2341	48	14	,	,	PUNCT
ajtas-2341	48	15	atomic	atomic	ADJ
ajtas-2341	48	16	layer	layer	NOUN
ajtas-2341	48	17	deposition	deposition	NOUN
ajtas-2341	48	18	(	(	PUNCT
ajtas-2341	48	19	ald	ald	PROPN
ajtas-2341	48	20	)	)	PUNCT
ajtas-2341	49	1	and	and	CCONJ
ajtas-2341	49	2	offer	offer	VERB
ajtas-2341	49	3	precise	precise	ADJ
ajtas-2341	49	4	control	control	NOUN
ajtas-2341	49	5	over	over	ADP
ajtas-2341	49	6	the	the	DET
ajtas-2341	49	7	growth	growth	NOUN
ajtas-2341	49	8	of	of	ADP
ajtas-2341	49	9	silicon	silicon	NOUN
ajtas-2341	49	10	layers	layer	NOUN
ajtas-2341	49	11	,	,	PUNCT
ajtas-2341	49	12	allowing	allow	VERB
ajtas-2341	49	13	for	for	ADP
ajtas-2341	49	14	the	the	DET
ajtas-2341	49	15	optimization	optimization	NOUN
ajtas-2341	49	16	of	of	ADP
ajtas-2341	49	17	both	both	CCONJ
ajtas-2341	49	18	electrical	electrical	ADJ
ajtas-2341	49	19	and	and	CCONJ
ajtas-2341	49	20	thermal	thermal	ADJ
ajtas-2341	49	21	properties	property	NOUN
ajtas-2341	49	22	.	.	PUNCT
ajtas-2341	50	1	by	by	ADP
ajtas-2341	50	2	carefully	carefully	ADV
ajtas-2341	50	3	engineering	engineer	VERB
ajtas-2341	50	4	the	the	DET
ajtas-2341	50	5	doping	doping	NOUN
ajtas-2341	50	6	profile	profile	NOUN
ajtas-2341	50	7	,	,	PUNCT
ajtas-2341	50	8	interface	interface	NOUN
ajtas-2341	50	9	quality	quality	NOUN
ajtas-2341	50	10	,	,	PUNCT
ajtas-2341	50	11	and	and	CCONJ
ajtas-2341	50	12	thermal	thermal	ADJ
ajtas-2341	50	13	transport	transport	NOUN
ajtas-2341	50	14	mechanisms	mechanism	NOUN
ajtas-2341	50	15	,	,	PUNCT
ajtas-2341	50	16	researchers	researcher	NOUN
ajtas-2341	50	17	have	have	AUX
ajtas-2341	50	18	made	make	VERB
ajtas-2341	50	19	significant	significant	ADJ
ajtas-2341	50	20	strides	stride	NOUN
ajtas-2341	50	21	in	in	ADP
ajtas-2341	50	22	improving	improve	VERB
ajtas-2341	50	23	the	the	DET
ajtas-2341	50	24	thermoelectric	thermoelectric	ADJ
ajtas-2341	50	25	figure	figure	NOUN
ajtas-2341	50	26	of	of	ADP
ajtas-2341	50	27	merit	merit	NOUN
ajtas-2341	50	28	(	(	PUNCT
ajtas-2341	50	29	zt	zt	PROPN
ajtas-2341	50	30	)	)	PUNCT
ajtas-2341	50	31	for	for	ADP
ajtas-2341	50	32	silicon	silicon	NOUN
ajtas-2341	50	33	-	-	PUNCT
ajtas-2341	50	34	based	base	VERB
ajtas-2341	50	35	devices	device	NOUN
ajtas-2341	50	36	.	.	PUNCT
ajtas-2341	51	1	despite	despite	SCONJ
ajtas-2341	51	2	these	these	DET
ajtas-2341	51	3	advances	advance	NOUN
ajtas-2341	51	4	,	,	PUNCT
ajtas-2341	51	5	challenges	challenge	NOUN
ajtas-2341	51	6	remain	remain	VERB
ajtas-2341	51	7	in	in	ADP
ajtas-2341	51	8	balancing	balance	VERB
ajtas-2341	51	9	electrical	electrical	ADJ
ajtas-2341	51	10	and	and	CCONJ
ajtas-2341	51	11	thermal	thermal	ADJ
ajtas-2341	51	12	conductivity	conductivity	NOUN
ajtas-2341	51	13	to	to	PART
ajtas-2341	51	14	achieve	achieve	VERB
ajtas-2341	51	15	optimal	optimal	ADJ
ajtas-2341	51	16	performance	performance	NOUN
ajtas-2341	51	17	.	.	PUNCT
ajtas-2341	52	1	future	future	ADJ
ajtas-2341	52	2	research	research	NOUN
ajtas-2341	52	3	should	should	AUX
ajtas-2341	52	4	focus	focus	VERB
ajtas-2341	52	5	on	on	ADP
ajtas-2341	52	6	further	further	ADJ
ajtas-2341	52	7	refining	refine	VERB
ajtas-2341	52	8	these	these	DET
ajtas-2341	52	9	fabrication	fabrication	NOUN
ajtas-2341	52	10	techniques	technique	NOUN
ajtas-2341	52	11	,	,	PUNCT
ajtas-2341	52	12	particularly	particularly	ADV
ajtas-2341	52	13	in	in	ADP
ajtas-2341	52	14	the	the	DET
ajtas-2341	52	15	area	area	NOUN
ajtas-2341	52	16	of	of	ADP
ajtas-2341	52	17	nanostructured	nanostructure	VERB
ajtas-2341	52	18	silicon	silicon	NOUN
ajtas-2341	52	19	films	film	NOUN
ajtas-2341	52	20	,	,	PUNCT
ajtas-2341	52	21	to	to	PART
ajtas-2341	52	22	continue	continue	VERB
ajtas-2341	52	23	improving	improve	VERB
ajtas-2341	52	24	the	the	DET
ajtas-2341	52	25	efficiency	efficiency	NOUN
ajtas-2341	52	26	of	of	ADP
ajtas-2341	52	27	thermoelectric	thermoelectric	ADJ
ajtas-2341	52	28	devices	device	NOUN
ajtas-2341	52	29	.	.	PUNCT
ajtas-2341	53	1	with	with	ADP
ajtas-2341	53	2	ongoing	ongoing	ADJ
ajtas-2341	53	3	innovation	innovation	NOUN
ajtas-2341	53	4	,	,	PUNCT
ajtas-2341	53	5	epitaxial	epitaxial	ADJ
ajtas-2341	53	6	silicon	silicon	NOUN
ajtas-2341	53	7	p	p	PROPN
ajtas-2341	53	8	-	-	PUNCT
ajtas-2341	53	9	n	n	NOUN
ajtas-2341	53	10	junctions	junction	NOUN
ajtas-2341	53	11	hold	hold	VERB
ajtas-2341	53	12	great	great	ADJ
ajtas-2341	53	13	promise	promise	NOUN
ajtas-2341	53	14	for	for	ADP
ajtas-2341	53	15	energy	energy	NOUN
ajtas-2341	53	16	harvesting	harvesting	NOUN
ajtas-2341	53	17	and	and	CCONJ
ajtas-2341	53	18	waste	waste	NOUN
ajtas-2341	53	19	heat	heat	NOUN
ajtas-2341	53	20	recovery	recovery	NOUN
ajtas-2341	53	21	applications	application	NOUN
ajtas-2341	53	22	,	,	PUNCT
ajtas-2341	53	23	contributing	contribute	VERB
ajtas-2341	53	24	to	to	ADP
ajtas-2341	53	25	more	more	ADV
ajtas-2341	53	26	sustainable	sustainable	ADJ
ajtas-2341	53	27	energy	energy	NOUN
ajtas-2341	53	28	solutions	solution	NOUN
ajtas-2341	53	29	.	.	PUNCT
ajtas-2341	54	1	references	reference	NOUN
ajtas-2341	54	2	:	:	PUNCT
ajtas-2341	54	3	1	1	NUM
ajtas-2341	54	4	.	.	X
ajtas-2341	54	5	vineis	vineis	PROPN
ajtas-2341	54	6	,	,	PUNCT
ajtas-2341	54	7	c.	c.	PROPN
ajtas-2341	54	8	j.	j.	PROPN
ajtas-2341	54	9	,	,	PUNCT
ajtas-2341	54	10	et	et	PROPN
ajtas-2341	54	11	al	al	PROPN
ajtas-2341	54	12	.	.	PUNCT
ajtas-2341	54	13	(	(	PUNCT
ajtas-2341	54	14	2010	2010	NUM
ajtas-2341	54	15	)	)	PUNCT
ajtas-2341	54	16	.	.	PUNCT
ajtas-2341	55	1	nanostructured	nanostructure	VERB
ajtas-2341	55	2	thermoelectrics	thermoelectric	NOUN
ajtas-2341	55	3	:	:	PUNCT
ajtas-2341	55	4	big	big	ADJ
ajtas-2341	55	5	efficiency	efficiency	NOUN
ajtas-2341	55	6	gains	gain	NOUN
ajtas-2341	55	7	from	from	ADP
ajtas-2341	55	8	small	small	ADJ
ajtas-2341	55	9	features	feature	NOUN
ajtas-2341	55	10	.	.	PUNCT
ajtas-2341	56	1	advanced	advanced	ADJ
ajtas-2341	56	2	materials	material	NOUN
ajtas-2341	56	3	,	,	PUNCT
ajtas-2341	56	4	22(36	22(36	NOUN
ajtas-2341	56	5	)	)	PUNCT
ajtas-2341	56	6	,	,	PUNCT
ajtas-2341	56	7	3970	3970	NUM
ajtas-2341	56	8	-	-	SYM
ajtas-2341	56	9	3980	3980	NUM
ajtas-2341	56	10	.	.	PUNCT
ajtas-2341	57	1	2	2	X
ajtas-2341	57	2	.	.	X
ajtas-2341	57	3	shakouri	shakouri	PROPN
ajtas-2341	57	4	,	,	PUNCT
ajtas-2341	57	5	a.	a.	NOUN
ajtas-2341	57	6	(	(	PUNCT
ajtas-2341	57	7	2011	2011	NUM
ajtas-2341	57	8	)	)	PUNCT
ajtas-2341	57	9	.	.	PUNCT
ajtas-2341	58	1	recent	recent	ADJ
ajtas-2341	58	2	developments	development	NOUN
ajtas-2341	58	3	in	in	ADP
ajtas-2341	58	4	semiconductor	semiconductor	NOUN
ajtas-2341	58	5	thermoelectric	thermoelectric	ADJ
ajtas-2341	58	6	physics	physics	NOUN
ajtas-2341	58	7	and	and	CCONJ
ajtas-2341	58	8	materials	material	NOUN
ajtas-2341	58	9	.	.	PUNCT
ajtas-2341	59	1	annual	annual	ADJ
ajtas-2341	59	2	review	review	NOUN
ajtas-2341	59	3	of	of	ADP
ajtas-2341	59	4	materials	material	NOUN
ajtas-2341	59	5	research	research	NOUN
ajtas-2341	59	6	,	,	PUNCT
ajtas-2341	59	7	41	41	NUM
ajtas-2341	59	8	,	,	PUNCT
ajtas-2341	59	9	399	399	NUM
ajtas-2341	59	10	-	-	SYM
ajtas-2341	59	11	431	431	NUM
ajtas-2341	59	12	.	.	PUNCT
ajtas-2341	60	1	3	3	X
ajtas-2341	60	2	.	.	X
ajtas-2341	60	3	snyder	snyder	PROPN
ajtas-2341	60	4	,	,	PUNCT
ajtas-2341	60	5	g.	g.	PROPN
ajtas-2341	60	6	j.	j.	PROPN
ajtas-2341	60	7	,	,	PUNCT
ajtas-2341	60	8	&	&	CCONJ
ajtas-2341	60	9	toberer	toberer	PROPN
ajtas-2341	60	10	,	,	PUNCT
ajtas-2341	60	11	e.	e.	PROPN
ajtas-2341	60	12	s.	s.	PROPN
ajtas-2341	60	13	(	(	PUNCT
ajtas-2341	60	14	2008	2008	NUM
ajtas-2341	60	15	)	)	PUNCT
ajtas-2341	60	16	.	.	PUNCT
ajtas-2341	61	1	complex	complex	ADJ
ajtas-2341	61	2	thermoelectric	thermoelectric	ADJ
ajtas-2341	61	3	materials	material	NOUN
ajtas-2341	61	4	.	.	PUNCT
ajtas-2341	62	1	nature	nature	NOUN
ajtas-2341	62	2	materials	material	NOUN
ajtas-2341	62	3	,	,	PUNCT
ajtas-2341	62	4	7(2	7(2	NUM
ajtas-2341	62	5	)	)	PUNCT
ajtas-2341	62	6	,	,	PUNCT
ajtas-2341	62	7	105	105	NUM
ajtas-2341	62	8	-	-	SYM
ajtas-2341	62	9	114	114	NUM
ajtas-2341	62	10	.	.	PUNCT
ajtas-2341	63	1	4	4	X
ajtas-2341	63	2	.	.	X
ajtas-2341	64	1	rowe	rowe	PROPN
ajtas-2341	64	2	,	,	PUNCT
ajtas-2341	64	3	d.	d.	PROPN
ajtas-2341	64	4	m.	m.	PROPN
ajtas-2341	64	5	(	(	PUNCT
ajtas-2341	64	6	ed	ed	NOUN
ajtas-2341	64	7	.	.	PUNCT
ajtas-2341	64	8	)	)	PUNCT
ajtas-2341	64	9	.	.	PUNCT
ajtas-2341	65	1	(	(	PUNCT
ajtas-2341	65	2	2005	2005	NUM
ajtas-2341	65	3	)	)	PUNCT
ajtas-2341	65	4	.	.	PUNCT
ajtas-2341	66	1	thermoelectrics	thermoelectric	NOUN
ajtas-2341	66	2	handbook	handbook	VERB
ajtas-2341	66	3	:	:	PUNCT
ajtas-2341	66	4	macro	macro	ADV
ajtas-2341	66	5	to	to	ADP
ajtas-2341	66	6	nano	nano	NOUN
ajtas-2341	66	7	.	.	PUNCT
ajtas-2341	67	1	crc	crc	PROPN
ajtas-2341	67	2	press	press	PROPN
ajtas-2341	67	3	.	.	PUNCT
ajtas-2341	68	1	5	5	X
ajtas-2341	68	2	.	.	X
ajtas-2341	68	3	bux	bux	PROPN
ajtas-2341	68	4	,	,	PUNCT
ajtas-2341	68	5	s.	s.	PROPN
ajtas-2341	68	6	k.	k.	PROPN
ajtas-2341	68	7	,	,	PUNCT
ajtas-2341	68	8	et	et	PROPN
ajtas-2341	68	9	al	al	PROPN
ajtas-2341	68	10	.	.	PUNCT
ajtas-2341	68	11	(	(	PUNCT
ajtas-2341	68	12	2009	2009	NUM
ajtas-2341	68	13	)	)	PUNCT
ajtas-2341	68	14	.	.	PUNCT
ajtas-2341	69	1	nanostructured	nanostructure	VERB
ajtas-2341	69	2	bulk	bulk	ADJ
ajtas-2341	69	3	silicon	silicon	NOUN
ajtas-2341	69	4	as	as	ADP
ajtas-2341	69	5	an	an	DET
ajtas-2341	69	6	effective	effective	ADJ
ajtas-2341	69	7	thermoelectric	thermoelectric	ADJ
ajtas-2341	69	8	material	material	NOUN
ajtas-2341	69	9	.	.	PUNCT
ajtas-2341	70	1	advanced	advanced	ADJ
ajtas-2341	70	2	functional	functional	ADJ
ajtas-2341	70	3	materials	material	NOUN
ajtas-2341	70	4	,	,	PUNCT
ajtas-2341	70	5	19(15	19(15	NUM
ajtas-2341	70	6	)	)	PUNCT
ajtas-2341	70	7	,	,	PUNCT
ajtas-2341	70	8	2445	2445	NUM
ajtas-2341	70	9	-	-	SYM
ajtas-2341	70	10	2452	2452	NUM
ajtas-2341	70	11	.	.	PUNCT
ajtas-2341	71	1	6	6	NUM
ajtas-2341	71	2	.	.	X
ajtas-2341	71	3	kim	kim	PROPN
ajtas-2341	71	4	,	,	PUNCT
ajtas-2341	71	5	r.	r.	PROPN
ajtas-2341	71	6	h.	h.	PROPN
ajtas-2341	71	7	,	,	PUNCT
ajtas-2341	71	8	et	et	PROPN
ajtas-2341	71	9	al	al	PROPN
ajtas-2341	71	10	.	.	PUNCT
ajtas-2341	71	11	(	(	PUNCT
ajtas-2341	71	12	2007	2007	NUM
ajtas-2341	71	13	)	)	PUNCT
ajtas-2341	71	14	.	.	PUNCT
ajtas-2341	72	1	influence	influence	NOUN
ajtas-2341	72	2	of	of	ADP
ajtas-2341	72	3	doping	dope	VERB
ajtas-2341	72	4	on	on	ADP
ajtas-2341	72	5	the	the	DET
ajtas-2341	72	6	performance	performance	NOUN
ajtas-2341	72	7	of	of	ADP
ajtas-2341	72	8	thin	thin	ADJ
ajtas-2341	72	9	-	-	PUNCT
ajtas-2341	72	10	film	film	NOUN
ajtas-2341	72	11	thermoelectric	thermoelectric	ADJ
ajtas-2341	72	12	devices	device	NOUN
ajtas-2341	72	13	.	.	PUNCT
ajtas-2341	73	1	journal	journal	PROPN
ajtas-2341	73	2	of	of	ADP
ajtas-2341	73	3	applied	applied	ADJ
ajtas-2341	73	4	physics	physic	NOUN
ajtas-2341	73	5	,	,	PUNCT
ajtas-2341	73	6	101(3	101(3	NUM
ajtas-2341	73	7	)	)	PUNCT
ajtas-2341	73	8	,	,	PUNCT
ajtas-2341	73	9	034506	034506	NUM
ajtas-2341	73	10	.	.	PUNCT
ajtas-2341	74	1	7	7	X
ajtas-2341	74	2	.	.	X
ajtas-2341	74	3	chen	chen	PROPN
ajtas-2341	74	4	,	,	PUNCT
ajtas-2341	74	5	g.	g.	PROPN
ajtas-2341	74	6	(	(	PUNCT
ajtas-2341	74	7	2012	2012	NUM
ajtas-2341	74	8	)	)	PUNCT
ajtas-2341	74	9	.	.	PUNCT
ajtas-2341	75	1	nanoscale	nanoscale	NOUN
ajtas-2341	75	2	energy	energy	NOUN
ajtas-2341	75	3	transport	transport	NOUN
ajtas-2341	75	4	and	and	CCONJ
ajtas-2341	75	5	conversion	conversion	NOUN
ajtas-2341	75	6	:	:	PUNCT
ajtas-2341	75	7	a	a	DET
ajtas-2341	75	8	parallel	parallel	ADJ
ajtas-2341	75	9	treatment	treatment	NOUN
ajtas-2341	75	10	of	of	ADP
ajtas-2341	75	11	electrons	electron	NOUN
ajtas-2341	75	12	,	,	PUNCT
ajtas-2341	75	13	molecules	molecule	NOUN
ajtas-2341	75	14	,	,	PUNCT
ajtas-2341	75	15	phonons	phonon	NOUN
ajtas-2341	75	16	,	,	PUNCT
ajtas-2341	75	17	and	and	CCONJ
ajtas-2341	75	18	photons	photon	NOUN
ajtas-2341	75	19	.	.	PUNCT
ajtas-2341	76	1	oxford	oxford	PROPN
ajtas-2341	76	2	university	university	PROPN
ajtas-2341	76	3	press	press	NOUN
ajtas-2341	76	4	.	.	PUNCT
ajtas-2341	77	1	8	8	X
ajtas-2341	77	2	.	.	X
ajtas-2341	78	1	harman	harman	PROPN
ajtas-2341	78	2	,	,	PUNCT
ajtas-2341	78	3	t.	t.	PROPN
ajtas-2341	78	4	c.	c.	PROPN
ajtas-2341	78	5	,	,	PUNCT
ajtas-2341	78	6	et	et	PROPN
ajtas-2341	78	7	al	al	PROPN
ajtas-2341	78	8	.	.	PUNCT
ajtas-2341	78	9	(	(	PUNCT
ajtas-2341	78	10	2002	2002	NUM
ajtas-2341	78	11	)	)	PUNCT
ajtas-2341	78	12	.	.	PUNCT
ajtas-2341	79	1	quantum	quantum	NOUN
ajtas-2341	79	2	dot	dot	NOUN
ajtas-2341	79	3	superlattice	superlattice	NOUN
ajtas-2341	79	4	thermoelectric	thermoelectric	ADJ
ajtas-2341	79	5	materials	material	NOUN
ajtas-2341	79	6	and	and	CCONJ
ajtas-2341	79	7	devices	device	NOUN
ajtas-2341	79	8	.	.	PUNCT
ajtas-2341	80	1	science	science	NOUN
ajtas-2341	80	2	,	,	PUNCT
ajtas-2341	80	3	297(5590	297(5590	NUM
ajtas-2341	80	4	)	)	PUNCT
ajtas-2341	80	5	,	,	PUNCT
ajtas-2341	80	6	2229	2229	NUM
ajtas-2341	80	7	-	-	SYM
ajtas-2341	80	8	2232	2232	NUM
ajtas-2341	80	9	.	.	PUNCT
ajtas-2341	81	1	9	9	X
ajtas-2341	81	2	.	.	X
ajtas-2341	81	3	ashurov	ashurov	PROPN
ajtas-2341	81	4	kh.b	kh.b	PROPN
ajtas-2341	81	5	.	.	PROPN
ajtas-2341	81	6	,	,	PUNCT
ajtas-2341	81	7	abdurakhmanov	abdurakhmanov	PROPN
ajtas-2341	81	8	b.m	b.m	PROPN
ajtas-2341	81	9	.	.	PROPN
ajtas-2341	81	10	,	,	PUNCT
ajtas-2341	81	11	et	et	PROPN
ajtas-2341	81	12	al	al	PROPN
ajtas-2341	81	13	.	.	PUNCT
ajtas-2341	81	14	(	(	PUNCT
ajtas-2341	81	15	2012	2012	NUM
ajtas-2341	81	16	)	)	PUNCT
ajtas-2341	81	17	.	.	PUNCT
ajtas-2341	82	1	heat	heat	NOUN
ajtas-2341	82	2	–	–	PUNCT
ajtas-2341	82	3	voltaic	voltaic	ADJ
ajtas-2341	82	4	properties	property	NOUN
ajtas-2341	82	5	of	of	ADP
ajtas-2341	82	6	silicon	silicon	NOUN
ajtas-2341	82	7	film	film	NOUN
ajtas-2341	82	8	–	–	PUNCT
ajtas-2341	82	9	type	type	NOUN
ajtas-2341	82	10	p	p	NOUN
ajtas-2341	82	11	–	–	PUNCT
ajtas-2341	82	12	n	n	PRON
ajtas-2341	82	13	structures	structure	NOUN
ajtas-2341	82	14	generated	generate	VERB
ajtas-2341	82	15	by	by	ADP
ajtas-2341	82	16	vacuum	vacuum	NOUN
ajtas-2341	82	17	deposition	deposition	NOUN
ajtas-2341	82	18	.	.	PUNCT
ajtas-2341	83	1	applied	apply	VERB
ajtas-2341	83	2	solar	solar	ADJ
ajtas-2341	83	3	energy	energy	NOUN
ajtas-2341	83	4	,	,	PUNCT
ajtas-2341	83	5	48(4	48(4	NUM
ajtas-2341	83	6	)	)	PUNCT
ajtas-2341	83	7	,	,	PUNCT
ajtas-2341	83	8	245–247	245–247	NUM
ajtas-2341	83	9	.	.	PUNCT
ajtas-2341	83	10	doi	doi	NOUN
ajtas-2341	83	11	:	:	PUNCT
ajtas-2341	83	12	10.3103	10.3103	NUM
ajtas-2341	83	13	/	/	SYM
ajtas-2341	83	14	s0003701x12040032	s0003701x12040032	PROPN
ajtas-2341	83	15	10	10	NUM
ajtas-2341	83	16	.	.	PUNCT
ajtas-2341	84	1	nimatov	nimatov	PROPN
ajtas-2341	84	2	s.	s.	PROPN
ajtas-2341	84	3	,	,	PUNCT
ajtas-2341	84	4	ashurov	ashurov	PROPN
ajtas-2341	84	5	kh	kh	PROPN
ajtas-2341	84	6	.	.	PROPN
ajtas-2341	84	7	,	,	PUNCT
ajtas-2341	84	8	et	et	PROPN
ajtas-2341	84	9	al	al	PROPN
ajtas-2341	84	10	.	.	PUNCT
ajtas-2341	84	11	(	(	PUNCT
ajtas-2341	84	12	2024	2024	NUM
ajtas-2341	84	13	)	)	PUNCT
ajtas-2341	84	14	.	.	PUNCT
ajtas-2341	85	1	nalysis	nalysis	NOUN
ajtas-2341	85	2	of	of	ADP
ajtas-2341	85	3	the	the	DET
ajtas-2341	85	4	process	process	NOUN
ajtas-2341	85	5	of	of	ADP
ajtas-2341	85	6	emf	emf	NOUN
ajtas-2341	85	7	and	and	CCONJ
ajtas-2341	85	8	current	current	ADJ
ajtas-2341	85	9	generation	generation	NOUN
ajtas-2341	85	10	in	in	ADP
ajtas-2341	85	11	si	si	PROPN
ajtas-2341	85	12	/	/	SYM
ajtas-2341	85	13	si	si	X
ajtas-2341	85	14	film	film	NOUN
ajtas-2341	85	15	structures	structure	NOUN
ajtas-2341	85	16	obtained	obtain	VERB
ajtas-2341	85	17	by	by	ADP
ajtas-2341	85	18	vacuum	vacuum	NOUN
ajtas-2341	85	19	deposition	deposition	NOUN
ajtas-2341	85	20	.	.	PUNCT
ajtas-2341	86	1	aip	aip	PROPN
ajtas-2341	86	2	conference	conference	NOUN
ajtas-2341	86	3	proceedings	proceeding	NOUN
ajtas-2341	86	4	,	,	PUNCT
ajtas-2341	86	5	3152(1	3152(1	NUM
ajtas-2341	86	6	)	)	PUNCT
ajtas-2341	86	7	,	,	PUNCT
ajtas-2341	86	8	id.040028	id.040028	PROPN
ajtas-2341	86	9	,	,	PUNCT
ajtas-2341	86	10	7	7	NUM
ajtas-2341	86	11	pp	pp	NOUN
ajtas-2341	86	12	.	.	PUNCT
ajtas-2341	87	1	https://doi.org/10.1063/5.0218833	https://doi.org/10.1063/5.0218833	X
ajtas-2341	87	2	.	.	PUNCT