310 American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) ISSN (Print) 2313-4410, ISSN (Online) 2313-4402 © Global Society of Scientific Research and Researchers http://asrjetsjournal.org/ Performance Analysis of the Designed 1330nm VCSEL Using InGaAsP/InP Jennifar Aktara*, Prova Christina Gomesb, Nabilah Manzoorc, Priyanka Pauld, Rinku Basake a,c,d,eDepartment of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh bSchool of Electrical and Computer Engineering, University of Ottawa, Canada aEmail: jennnifar@gmail.com Abstract This research addresses the design and performance analysis of a 1330nm InGaAsP/InP VCSEL based on a model that accurately describes a multiple quantum well separate confinement heterostructure VCSEL. MATLAB is used as the simulation tool. ‘Material gain vs. photon energy’, ‘Material gain vs. Wavelength’ and ‘Power vs. wavelength’ characteristics are obtained from simulations. Threshold current and output power of the laser is calculated using different parameters. Obtained results correspond to a maximum resonance frequency of 12.312 GHz at 28 mA injection current, -162.3 dB/Hz RIN and a value of 104 dB of the VCSEL at 7 mA injection current. Keywords: VCSEL; Material gain; Carrier density; Photon density; Relative response; Relative intensity; Injection current. 1. Introduction VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor micro laser diode that emits light in a cylindrical beam vertically from the surface of a fabricated wafer, and offers significant advantages when compared to the edge-emitting lasers currently used in the majority of fiber optic communications devices. The vertical-cavity types typically consist of a circular dot geometry with lateral dimensions of a few microns [1]. ------------------------------------------------------------------------ * Corresponding author. http://asrjetsjournal.org/ American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 311 The Vertical Cavity Surface Emitting Laser (VCSEL) is emerging as the light source of choice for modern high speed, short wavelength communication systems. It produces a very good beam quality. The VCSEL has several advantages over edge-emitting diodes. They are- the inherent low cost of manufacture, enhanced reliability, no astigmatic and circularly symmetric optical output. The VCSEL requires less electrical current to produce a given coherent energy output. VECSELs can also be modulated with high frequencies for optical fiber communications. This paper deals with the Performance Analysis of a VCSEL using MATLAB. Here all the calculations, performance characteristics graphs and MATLAB files are presented. 1.1. Research Methodology The objective of this work is to design and analyze the performance characteristics of a Vertical Cavity Surface Emitting LASER (VCSEL) using MATLAB. More specifically the objectives are • to solve the rate equation of this semiconductor LASER [5]. • to calculate the material, gain and modal gain for different values of photon energy and wavelength [5]. • to calculate the output power of the designed Laser [13] [5]. • to analyze the modulation response of the designed VCSEL. • to obtain other static and dynamic plots of the designed LASER. 1.2. VCSEL Simple Construction and Fabrication What makes the VCSEL structure special is that it emits light perpendicular to the surface of the semiconductor [10] [14]. This makes more features available on VCSEL as compared to other conventional lasers. Therefore, the structure of a VCSEL is significantly different from other laser structures have been seen so far, such as stripe lasers or edge-emitting lasers. The construction of a VCSEL is particularly different from other lasers. VCSEL consists of a vertical cavity formed by epitaxial layers and employs a DBR above and below the active region [10]. Figure 1: The cross sectional view of a general VCSEL [6] American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 312 To engineer a particular wavelength in VCSEL, one method used is the thickness-gradient placed in the DBR under the active region [4]. This creates a different cavity thickness across the structure with thickness-graded layers becoming thicker from left to right [10]. The DBR mirrors are highly reflective mirrors, with a reflectivity of greater than 99.9% [2]. The mirrors can be either epitaxial growth or dielectric multilayered. The two DBRs in the VCSEL are oppositely doped (n-DBR and p-DBR). Placed between the upper and lower DBRs is an active region emitting light, usually containing several quantum wells [3]. The active region receives current through a current-guiding structure by either proton-injected surroundings or through an oxide aperture [7]. 1.3. Experimental setup of Designing of a 1330nm VCSEL using InGaAsP/InP A. Design of a 1330nm In0.7Ga0.3As0.644P0.356/InP MQW VCSEL (T=300K) QW material In0.7Ga0.3As0.644P0.356 Energy bandgap, Eg = 0.936 eV Refractive index, n = 3.56 Differential gain, a = 5.869Ao Transparency carrier density, Ntr = 1.5061*1018cm-3 Barrier material InP Energy bandgap, Eg = 1.351 eV Refractive index, n = 3.188 Differential gain, a = 5.869Ao Transparency carrier density, Ntr = 2.530*1018 cm-3 Cladding material Ga0.05In0.95P for Effective mass of electron at the conduction band, me = 0.0805mo, Effective mass of hole at the valence band, mhh = 0.6095 mo Energy bandgap, Eg = 1.395 eV Refractive index, n = 3.182 Differential gain, a = 5.848Ao The transparency carrier density, Ntr = 2.6143*1018 cm-3 American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 313 Average refractive index in the cavity region, navg = ((3*3.65) + (4*3.188) + (2*3.182)) / 9 = 3.34 Length of the cavity, Lcavity = λ / navg (1) = (1330*10-9 / 3.34) = 3.982*10-7cm Length of the cladding layers, Lcladding = 2λ / 4navg (2) = 2*(1330*10-9 / (4* 3.34)) = 1.99*10-7cm Length of the active layers, barriers and SCH regions, L = λ /2 navg (3) = 1330*10-9 / (2*3.34) = 1.99*10-7cm Length of the active region, Lactive = 3 * 100Ao (30 * 10-7 cm) Length of the barrier region Lbarrier = 2 * 120 Ao (24 * 10-7cm) Length of the SCH region LSCH = 2 * 725.5 Ao (145.1 * 10-7cm) The energy of the confined state in the conduction band (CB) well of thickness lw is calculated as = (((6.623 * 10-34)2) / (8 * (5.1013 * 10-30)*((10-9)2))) / 1.6*10-19 = 0.0672 eV where, h is the Plank’s constant and me * is the effective mass of electron in the conduction band. American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 314 The energy of the confined state in the valance band (VB) well of the thickness lw is calculated as [29] E1′ = (4) B. Performance Analysis of the Designed 1330nm VCSEL Calculation of Threshold Current of a Laser Threshold current [1] [19] [8], ci tha th NqvI th = (5) Here, Electron charge, q = 1.6* 10-19 Efficiency, ηi = 0.8 Carrier lifetime, nc = 2.63* 10-9 sec Active Region Volume, areaLV activea *= (6) =3*10-7* *π (5.65*10-4) 2 =3.086*10-12cm3 Here, Area= *π (5.65*10-4) 2 =1.0029*10-6 cm2 Lactive = Nqw*dqw (7) = 3*10-7cm Threshold carrier density [5], ( ) 0/exp g trth miNN Γ+〉〈= αα (8) =3.3154*1018 Here, American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 315 Mirror loss, αm = (1/ Leff) * log (1/R) [13] (9) =26.9043 Here, Reflectivity of both mirrors, R =0.995 Intrinsic absorption loss, αi = 20 Threshold Current, mAIth 75.0= C. Calculation of Output Power of a Laser [13] Output power, Pout = αm * vg * hυ * svp (10) Here, Plank’s Constant, h = 6.676*10-34 Current injection efficiency, ηi = 0.8 Threshold Current, Ith=0.758mA Injection Current, I=5.37*10-4 =0.537mA Electron’s Charge, q=1.6*10-19 gamma= 2*(Lactive/Lefft)*0.9 =0.0290 gain(j)=2.8842 υ=c/λb =2.2556*1016 Hz Here, Velocity of light, c= 3*1010 cms-1 American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 316 Lasing wavelength, λb=1330*10-7 cm Mirror loss, αm = (1/ Leff) * log (1/R) [13] (11) = 26.7721 Here, Effective length, Leff = Lcavity + Lefft+ Leffb (12) = 1.8723*10-4 Reflectivity of both mirrors, R= 0.995 Output power, Pout= 53.068 dBW 1.4. Experimental Results and characteristic curves The various characteristics [17] of 1330nm VCSEL is shown below using Matlab simulation. 1.4.1. Carrier density vs. time characteristic At 300K the steady state carrier density for 1330nm In0.7Ga0.3As0.644P0.356 /InP MQW VCSEL is calculated for value of time, the results are plotted as shown in Figure using the equation below: 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 1 2 3 4 5 6 7 x 10 18 Time (ns) C ar rie r d en si ty (c m -3 ) Y: 4.7053*e18cm-3 Figure 2: Plots of carrier density vs. time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100Aᵒ QW VCSEL at 300K, where the injection current is 7mA. A steady state carrier density of 4.7053*1018 cm-3 was achieved. American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 317 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 1 2 3 4 5 6 7 8 9 10 x 10 18 Time (ns) C ar rie r d en si ty (c m -3 ) I=7mA I=15mA I=21mA Figure 3: Plots of carrier density vs. time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K, where the injection current is 7mA. A steady state carrier density of 4.7053*1018 cm-3 was achieved. 1.4.2. Photon density vs. time characteristic At 300K the steady state photon density for 1330nm In0.7Ga0.3As0.644P0.356 /InP MQW VCSEL is calculated for value of time, 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 2 4 6 8 10 12 14 x 10 15 Time (ns) Ph ot on d en si ty (c m -3 ) Y: 6.9197*1014 cm-3 Figure 4: Plots of photon density vs. time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100Aᵒ QW VCSEL at 300K, where the injection current is 7mA. A steady state carrier density of 6.9197*1014 cm-3 was achieved. American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 318 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 0.5 1 1.5 2 2.5 3 3.5 x 10 16 Time (ns) P ho to n de ns ity (c m -3 ) I=7mA I=15mA I=21mA Figure 5: Plots of photon density vs. time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100Aᵒ QW VCSEL at 300K, where the injection current is 7mA. A steady state photon density of 4.7053*1018 cm-3 was achieved. . A maximum photon density of 3.51*1016cm-3 of the VCSEL is obtained at 21 mA injection current [11]. 1.4.3. Output Power vs. Time characteristic The MATLAB simulation is shown below 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 Time (sec) O ut pu t p ow er (w at t) Y: 2.5 mW Figure 6: Plots of output power [18] vs. time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K, where the injection current is 7mA. A steady state output power 2.5mW was achieved. 1.4.4. Modal gain vs. carrier density and modal gain vs. time characteristics At 300K the modal gain for 1330nm In0.7Ga0.3As0.644P0.356 /InP MQW VCSEL is calculated for value of carrier density and time, the results are plotted as shown in Figure 7 using the equation below: American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 319 )ln(0 trN Ngg Γ=Γ (13) 1 2 3 4 5 6 7 x 10 18 0 20 40 60 80 100 Modal gain vs. carrier density of a VCSEL Carrier density (cm-3) M od al g ai n (c m -1 ) In0.7Ga0.3As0.644P0.356/InP QW, T=300 K 0 0.5 1 1.5 2 2.5 3 3.5 x 10 -9 0 20 40 60 80 100 Modal gain vs. time of a VCSEL Time (Sec) M od al g ai n (c m -1 ) In0.7Ga0.3As0.644P0.356/InP QW, T=300 K Figure 7: Plots of modal gain vs. carrier density and time of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K [9] [13]. 1.4.5. Bias voltage vs. injection current and output power vs. injection current characteristics 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 Injection current (mA) B ia s vo lta ge (v ol t) In0.7Ga0.3As0.644P0.356/InP QW, T=300 K 2 4 6 8 10 12 14 16 0 0.5 1 1.5 2 2.5 3 Injection current (mA) O ut pu t p ow er (m W ) In0.7Ga0.3As0.644P0.356/InP QW, T=300 K Figure 8: Plots of (a) bias voltage vs. injection current and (b) output power vs. injection current [12] of 1330 nm InPPAsGaIn /356.0644.03.07.0 100Aᵒ QW VCSEL at 300K [11]. A bias voltage of 3.3V is required to achieve the threshold current of .785 mA and plot (b) is showing the linear characteristic between injection current and output power [9,16]. 1.4.6. Relative Response vs. frequency characteristic American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 320 0 0.5 1 1.5 2 2.5 3 x 10 10 -30 -25 -20 -15 -10 -5 0 5 10 15 Frequency, f in Hz R el at iv e R es po ns e, H (f) in d B In0.7Ga0.3As0.644P0.356/InP QW, T=300 K7 mA Figure 9: Plots of modulation response vs. frequency of 1330 nm InPPAsGaIn /356.0644.03.07.0 100Aᵒ QW VCSEL at 300K. A resonance frequency of 5.91 GHz of the VCSEL is obtained at 7 mA injection current [16]. 0 0.5 1 1.5 2 2.5 3 x 10 10 -30 -25 -20 -15 -10 -5 0 5 10 15 Frequency, f in Hz R el at iv e R es po ns e, H (f) in d B 7mA 14mA 21mA 28mA Figure 10: Plots of modulation response vs. frequency of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K. A maximum resonance frequency of 12.312 GHz of the VCSEL is obtained at 28 mA injection current. 1.4.7. Relative intensity noise (RIN) vs. frequency and Frequency Modulation (FM) Noise vs. frequency characteristics of the VCSEL 10 8 10 9 10 10 10 11 -165 -160 -155 -150 -145 -140 -135 -130 -125 Frequency, f in Hz R IN (d B /H z) Y: -154.5006 dB/Hz Figure 11: Plots of relative intensity noise vs. frequency of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K. A value of -162.3 dB/Hz RIN of the VCSEL is obtained at 7 mA injection current. 1.4.8. Frequency modulation noise vs. Frequency American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 321 The frequency modulation noise vs. frequency characteristic has been observed by using MATLAB simulation. The figure obtained is as shown in the following figure 4.11 below. 10 8 10 9 10 10 10 11 85 90 95 100 105 110 115 120 125 130 Frequency, f in Hz FM n oi se (d B ) Y:89.9724 dB Figure 12: Plots of frequency modulation noise vs. frequency of 1330 nm InPPAsGaIn /356.0644.03.07.0 100A0 QW VCSEL at 300K. A value of nearly 104 dB of the VCSEL is obtained at 7 mA injection current. From the above plot it is observed that frequency modulation noise of the VCSEL varies with the frequency and a value of nearly 104 dB of the VCSEL is obtained at 7 mA injection current. 2. Conclusions The necessary steps for designing a 1330nm MQW VCSEL using InGaAsP/InP materials and analyzing the performance characteristics have been illustrated here. To understand VCSEL concept, the basic construction and fabrication of it have been demonstrated. The simulations of performance characteristic analysis were done by using MATLAB software. Using VCSEL for wireless communication devices can open a new era in the field of optoelectronics. Detecting cancer cells use VCSELs has been tremendously successful [15]. VCSEL can also be used in core fiber optical transmission networks for smart grid communication services which requires high bit rate transmission, high spectral efficiency, multi-user supporting, and bidirectional communication. Moreover, the performance of VCSEL can be evaluated in long haul communication [20] and compared with Soliton or Gaussian Pulse [21,22]. The application of VCSEL can be evaluated in 4G-5G communication technology for feasibility testing [23], in Smart Grid communication [24], cyber physical power system communication [25] etc. This particular work is simulation based where we used several parameters and constraints. The experimental result is close to the real time based result, however if we had the chance to use parameters independently we could have achieved more precise result. Besides there may arise difficulties like temperature fluctuation and high power consumption due to use of longer wavelength devices. Such bottlenecks can be dealt with more research work along with latest technologies. To more efficiently remove the heat, we can either integrate the devices on a substrate with higher thermal conductivity [27], e.g., copper which has ∼9 times of the thermal conductivity of GaAs, or provide additional heat sinking from the top surface and sidewalls using gold [28] or copper plating [29]. American Scientific Research Journal for Engineering, Technology, and Sciences (ASRJETS) (2017) Volume 30, No 1, pp 310-324 322 Acknowledgements We would like to convey our heartiest gratitude to Mr. Rinku Basak, Assistant Professor & Head of Graduate Program, Faculty of Engineering, American International University-Bangladesh, for his encouragement and valuable advice provided to us during the completion of our research work. We couldn’t have completed this work without his continuous guidance and support. References [1] Diode Lasers and Photonic Integrated Circuits, L.A. Coldren, S.W. Corzine, UCSB, 1995 John Wiley. [2] Semiconductor Lasers, Pamela L . Derry, Luis Figueroa, Chi-Shain Hong, Chapter 13. [3] The story of semiconductors, John Orton, Emeritus Professor, University of Nottingham, UK. [4] IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, Tunable VCSEL, Connie J. Chang-Hasnain, VOL. 6, NO. 6, NOVEMBER/DECEMBER 2000 [5] In Tech, The vertical cavity surface emitting laser VCSEL and electrical access contribution - Angelique Rissons and Jean-Claude Mollier. [6] Vertical Cavity Surface Emitting Laser (VCSEL) Technology, Gary W. Weasel, Jr., Dr. Raymond Winton - ECE 6853, Section 01. [7] Integrated Microelectronic Devices, Carrier generation and recombination, Del Alamo, Lecture 4. 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Maracas, Reduction of the thermal impedance of vertical-cavtiy surface-emitting lasers after integration with copper substrates. Appl. Phys. Lett. 69(4), 463 (1996) [28] T. Wipiejewski, D.B. Young, M.G. Perers, B.J. Thibeault, L.A. Coldren, Improved performance of vertical-cavity surface-emitting laser diodes with Au-plated heat spreading layer. Electron. Lett. 31(4), 279 (1995) [29] Musaddeque Anwar Al-Abedin Syed1 , Dr. Md. Kamrul Hassan, “Design of a LW-VCSEL Optical Source”, Vol. 3, Issue 12, 2014, International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering [30] A.N. AL-Omari, G.P Carey, S. Hallstein, J.P. Watson, G. Dang, K.L. Lear, Low thermal resistance high-speed top-emitting 980-nm VCSELs. IEEE Photon. Technol. Lett. 18(11), 1225 (2006) The objective of this work is to design and analyze the performance characteristics of a Vertical Cavity Surface Emitting LASER (VCSEL) using MATLAB. More specifically the objectives are A. Design of a 1330nm In0.7Ga0.3As0.644P0.356/InP MQW VCSEL (T=300K) B. Performance Analysis of the Designed 1330nm VCSEL Calculation of Threshold Current of a Laser C. Calculation of Output Power of a Laser [13]