id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
bibechana-21072	Shrestha, Sanju; Shakya, Ambika; Sarkar, C K	Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model	2018	8	.pdf	application/pdf	3696	164	49	This signifies that the consideration of dislocation layer as a separate layer which has thickness equal to that of the junction in the two layer model is more effective and the results obtained is convincing with the experimental data also. =10 14 m -2 n dis =7x10 14 m -2 dc M ob ili ty m 2 /V s Temperature K ii sr ac dis total pz Fig. 3: Variation of dc mobility with temperature in the heterojunction of AlGaN/GaN for various scattering mechanisms such as acoustic phonon (ac),piezoelectric (pz), surface roughness (sr), ionized impurity (ii): and only the dislocation (dis) scatterings for interfacial layer separately and also the resultant of above all scattering mechanisms(total) in the heterojunction layer considering it as a single layer.	cache/bibechana-21072.pdf	txt/bibechana-21072.txt