id	sid	tid	token	lemma	pos
bibechana-4828	1	1	microsoft	microsoft	PROPN
bibechana-4828	1	2	word	word	PROPN
bibechana-4828	1	3	shobha	shobha	PROPN
bibechana-4828	1	4	kanta	kanta	PROPN
bibechana-4828	1	5	lamichhane	lamichhane	PROPN
bibechana-4828	1	6	-	-	PUNCT
bibechana-4828	1	7	final	final	ADJ
bibechana-4828	1	8	59-66.doc	59-66.doc	NUM
bibechana-4828	1	9	shobha	shobha	NOUN
bibechana-4828	1	10	kanta	kanta	PROPN
bibechana-4828	1	11	lamichhane	lamichhane	PROPN
bibechana-4828	1	12	/	/	SYM
bibechana-4828	1	13	bibechana	bibechana	PROPN
bibechana-4828	1	14	8	8	NUM
bibechana-4828	1	15	(	(	PUNCT
bibechana-4828	1	16	2012	2012	NUM
bibechana-4828	1	17	)	)	PUNCT
bibechana-4828	1	18	59	59	NUM
bibechana-4828	1	19	-	-	SYM
bibechana-4828	1	20	66	66	NUM
bibechana-4828	1	21	:	:	PUNCT
bibechana-4828	2	1	bmhss	bmhss	PROPN
bibechana-4828	2	2	,	,	PUNCT
bibechana-4828	2	3	p.59	p.59	NOUN
bibechana-4828	2	4	bibechana	bibechana	VERB
bibechana-4828	2	5	a	a	DET
bibechana-4828	2	6	multidisciplinary	multidisciplinary	ADJ
bibechana-4828	2	7	journal	journal	NOUN
bibechana-4828	2	8	of	of	ADP
bibechana-4828	2	9	science	science	NOUN
bibechana-4828	2	10	,	,	PUNCT
bibechana-4828	2	11	technology	technology	NOUN
bibechana-4828	2	12	and	and	CCONJ
bibechana-4828	2	13	mathematics	mathematic	NOUN
bibechana-4828	2	14	issn	issn	VERB
bibechana-4828	2	15	2091	2091	NUM
bibechana-4828	2	16	-	-	SYM
bibechana-4828	2	17	0762	0762	NUM
bibechana-4828	2	18	(	(	PUNCT
bibechana-4828	2	19	online	online	ADJ
bibechana-4828	2	20	)	)	PUNCT
bibechana-4828	2	21	journal	journal	NOUN
bibechana-4828	2	22	homepage	homepage	NOUN
bibechana-4828	2	23	:	:	PUNCT
bibechana-4828	2	24	http://nepjol.info/index.php/bibechana	http://nepjol.info/index.php/bibechana	PROPN
bibechana-4828	2	25	experimental	experimental	ADJ
bibechana-4828	2	26	investigation	investigation	NOUN
bibechana-4828	2	27	on	on	ADP
bibechana-4828	2	28	anisotropic	anisotropic	NOUN
bibechana-4828	2	29	surface	surface	NOUN
bibechana-4828	2	30	properties	property	NOUN
bibechana-4828	2	31	of	of	ADP
bibechana-4828	2	32	crystalline	crystalline	ADJ
bibechana-4828	2	33	silicon	silicon	NOUN
bibechana-4828	2	34	shobha	shobha	PROPN
bibechana-4828	2	35	kanta	kanta	PROPN
bibechana-4828	2	36	lamichhane	lamichhane	PROPN
bibechana-4828	2	37	department	department	PROPN
bibechana-4828	2	38	of	of	ADP
bibechana-4828	2	39	physics	physics	PROPN
bibechana-4828	2	40	,	,	PUNCT
bibechana-4828	2	41	prithvi	prithvi	PROPN
bibechana-4828	2	42	narayan	narayan	PROPN
bibechana-4828	2	43	campus	campus	PROPN
bibechana-4828	2	44	,	,	PUNCT
bibechana-4828	2	45	pokhara	pokhara	NOUN
bibechana-4828	2	46	,	,	PUNCT
bibechana-4828	2	47	nepal	nepal	ADJ
bibechana-4828	2	48	e	e	NOUN
bibechana-4828	2	49	-	-	NOUN
bibechana-4828	2	50	mail	mail	NOUN
bibechana-4828	2	51	:	:	PUNCT
bibechana-4828	2	52	sklamichhane@hotmail.com	sklamichhane@hotmail.com	PROPN
bibechana-4828	2	53	article	article	NOUN
bibechana-4828	2	54	history	history	NOUN
bibechana-4828	2	55	:	:	PUNCT
bibechana-4828	2	56	received	receive	VERB
bibechana-4828	2	57	31	31	NUM
bibechana-4828	2	58	may	may	NOUN
bibechana-4828	2	59	,	,	PUNCT
bibechana-4828	2	60	2011	2011	NUM
bibechana-4828	2	61	;	;	PUNCT
bibechana-4828	2	62	accepted	accept	VERB
bibechana-4828	2	63	25	25	NUM
bibechana-4828	2	64	july	july	PROPN
bibechana-4828	2	65	,	,	PUNCT
bibechana-4828	2	66	2011	2011	NUM
bibechana-4828	2	67	abstract	abstract	ADJ
bibechana-4828	2	68	anisotropic	anisotropic	NOUN
bibechana-4828	2	69	etching	etch	VERB
bibechana-4828	2	70	of	of	ADP
bibechana-4828	2	71	silicon	silicon	NOUN
bibechana-4828	2	72	has	have	AUX
bibechana-4828	2	73	been	be	AUX
bibechana-4828	2	74	studied	study	VERB
bibechana-4828	2	75	by	by	ADP
bibechana-4828	2	76	wet	wet	ADJ
bibechana-4828	2	77	potassium	potassium	NOUN
bibechana-4828	2	78	hydroxide	hydroxide	NOUN
bibechana-4828	2	79	(	(	PUNCT
bibechana-4828	2	80	koh	koh	PROPN
bibechana-4828	2	81	)	)	PUNCT
bibechana-4828	2	82	etchant	etchant	NOUN
bibechana-4828	2	83	with	with	ADP
bibechana-4828	2	84	its	its	PRON
bibechana-4828	2	85	variation	variation	NOUN
bibechana-4828	2	86	of	of	ADP
bibechana-4828	2	87	temperature	temperature	NOUN
bibechana-4828	2	88	and	and	CCONJ
bibechana-4828	2	89	concentration	concentration	NOUN
bibechana-4828	2	90	.	.	PUNCT
bibechana-4828	3	1	results	result	NOUN
bibechana-4828	3	2	presented	present	VERB
bibechana-4828	3	3	here	here	ADV
bibechana-4828	3	4	are	be	AUX
bibechana-4828	3	5	temperature	temperature	NOUN
bibechana-4828	3	6	dependent	dependent	ADJ
bibechana-4828	3	7	etch	etch	NOUN
bibechana-4828	3	8	rate	rate	NOUN
bibechana-4828	3	9	along	along	ADP
bibechana-4828	3	10	the	the	DET
bibechana-4828	3	11	crystallographic	crystallographic	ADJ
bibechana-4828	3	12	orientations	orientation	NOUN
bibechana-4828	3	13	.	.	PUNCT
bibechana-4828	4	1	the	the	DET
bibechana-4828	4	2	etching	etch	VERB
bibechana-4828	4	3	rate	rate	NOUN
bibechana-4828	4	4	of	of	ADP
bibechana-4828	4	5	the	the	DET
bibechana-4828	4	6	(	(	PUNCT
bibechana-4828	4	7	111	111	NUM
bibechana-4828	4	8	)	)	PUNCT
bibechana-4828	4	9	surface	surface	NOUN
bibechana-4828	4	10	family	family	NOUN
bibechana-4828	4	11	is	be	AUX
bibechana-4828	4	12	of	of	ADP
bibechana-4828	4	13	prime	prime	ADJ
bibechana-4828	4	14	importance	importance	NOUN
bibechana-4828	4	15	for	for	ADP
bibechana-4828	4	16	microfabrication	microfabrication	NOUN
bibechana-4828	4	17	.	.	PUNCT
bibechana-4828	5	1	however	however	ADV
bibechana-4828	5	2	,	,	PUNCT
bibechana-4828	5	3	the	the	DET
bibechana-4828	5	4	experimental	experimental	ADJ
bibechana-4828	5	5	values	value	NOUN
bibechana-4828	5	6	of	of	ADP
bibechana-4828	5	7	the	the	DET
bibechana-4828	5	8	corresponding	corresponding	ADJ
bibechana-4828	5	9	etch	etch	NOUN
bibechana-4828	5	10	rate	rate	NOUN
bibechana-4828	5	11	are	be	AUX
bibechana-4828	5	12	often	often	ADV
bibechana-4828	5	13	scattered	scatter	VERB
bibechana-4828	5	14	and	and	CCONJ
bibechana-4828	5	15	the	the	DET
bibechana-4828	5	16	etching	etch	VERB
bibechana-4828	5	17	mechanism	mechanism	NOUN
bibechana-4828	5	18	of	of	ADP
bibechana-4828	5	19	(	(	PUNCT
bibechana-4828	5	20	111	111	NUM
bibechana-4828	5	21	)	)	PUNCT
bibechana-4828	5	22	remains	remain	VERB
bibechana-4828	5	23	unclear	unclear	ADJ
bibechana-4828	5	24	.	.	PUNCT
bibechana-4828	6	1	etching	etch	VERB
bibechana-4828	6	2	and	and	CCONJ
bibechana-4828	6	3	activation	activation	NOUN
bibechana-4828	6	4	energy	energy	NOUN
bibechana-4828	6	5	are	be	AUX
bibechana-4828	6	6	found	find	VERB
bibechana-4828	6	7	to	to	PART
bibechana-4828	6	8	be	be	AUX
bibechana-4828	6	9	consistently	consistently	ADV
bibechana-4828	6	10	favorable	favorable	ADJ
bibechana-4828	6	11	with	with	ADP
bibechana-4828	6	12	the	the	DET
bibechana-4828	6	13	thermal	thermal	ADJ
bibechana-4828	6	14	agitation	agitation	NOUN
bibechana-4828	6	15	for	for	ADP
bibechana-4828	6	16	a	a	DET
bibechana-4828	6	17	given	give	VERB
bibechana-4828	6	18	crystal	crystal	NOUN
bibechana-4828	6	19	plane	plane	NOUN
bibechana-4828	6	20	.	.	PUNCT
bibechana-4828	7	1	study	study	NOUN
bibechana-4828	7	2	demonstrate	demonstrate	VERB
bibechana-4828	7	3	that	that	SCONJ
bibechana-4828	7	4	the	the	DET
bibechana-4828	7	5	contribution	contribution	NOUN
bibechana-4828	7	6	of	of	ADP
bibechana-4828	7	7	microscopic	microscopic	ADJ
bibechana-4828	7	8	activation	activation	NOUN
bibechana-4828	7	9	energy	energy	NOUN
bibechana-4828	7	10	that	that	PRON
bibechana-4828	7	11	effectively	effectively	ADV
bibechana-4828	7	12	controls	control	VERB
bibechana-4828	7	13	the	the	DET
bibechana-4828	7	14	etching	etch	VERB
bibechana-4828	7	15	process	process	NOUN
bibechana-4828	7	16	.	.	PUNCT
bibechana-4828	8	1	such	such	DET
bibechana-4828	8	2	a	a	DET
bibechana-4828	8	3	strong	strong	ADJ
bibechana-4828	8	4	anisotropy	anisotropy	NOUN
bibechana-4828	8	5	in	in	ADP
bibechana-4828	8	6	koh	koh	PROPN
bibechana-4828	8	7	allows	allow	VERB
bibechana-4828	8	8	us	we	PRON
bibechana-4828	8	9	a	a	DET
bibechana-4828	8	10	precious	precious	ADJ
bibechana-4828	8	11	control	control	NOUN
bibechana-4828	8	12	of	of	ADP
bibechana-4828	8	13	lateral	lateral	ADJ
bibechana-4828	8	14	dimensions	dimension	NOUN
bibechana-4828	8	15	of	of	ADP
bibechana-4828	8	16	the	the	DET
bibechana-4828	8	17	silicon	silicon	NOUN
bibechana-4828	8	18	microstructure	microstructure	NOUN
bibechana-4828	8	19	.	.	PUNCT
bibechana-4828	9	1	keywords	keyword	NOUN
bibechana-4828	9	2	:	:	PUNCT
bibechana-4828	9	3	microfabrication	microfabrication	NOUN
bibechana-4828	9	4	;	;	PUNCT
bibechana-4828	9	5	activation	activation	NOUN
bibechana-4828	9	6	energy	energy	NOUN
bibechana-4828	9	7	;	;	PUNCT
bibechana-4828	9	8	concentration	concentration	NOUN
bibechana-4828	9	9	;	;	PUNCT
bibechana-4828	9	10	anisotropy	anisotropy	VERB
bibechana-4828	9	11	;	;	PUNCT
bibechana-4828	9	12	crystal	crystal	NOUN
bibechana-4828	9	13	plane	plane	NOUN
bibechana-4828	9	14	1	1	NUM
bibechana-4828	9	15	.	.	PUNCT
bibechana-4828	10	1	introduction	introduction	NOUN
bibechana-4828	10	2	anisotropic	anisotropic	NOUN
bibechana-4828	10	3	etching	etch	VERB
bibechana-4828	10	4	of	of	ADP
bibechana-4828	10	5	silicon	silicon	NOUN
bibechana-4828	10	6	is	be	AUX
bibechana-4828	10	7	used	use	VERB
bibechana-4828	10	8	to	to	PART
bibechana-4828	10	9	obtain	obtain	VERB
bibechana-4828	10	10	varied	varied	ADJ
bibechana-4828	10	11	microstructures	microstructure	NOUN
bibechana-4828	10	12	[	[	X
bibechana-4828	10	13	1–3	1–3	NOUN
bibechana-4828	10	14	]	]	X
bibechana-4828	10	15	,	,	PUNCT
bibechana-4828	10	16	and	and	CCONJ
bibechana-4828	10	17	anisotropic	anisotropic	NOUN
bibechana-4828	10	18	etchants	etchant	NOUN
bibechana-4828	10	19	extensively	extensively	ADV
bibechana-4828	10	20	used	use	VERB
bibechana-4828	10	21	are	be	AUX
bibechana-4828	10	22	koh	koh	PROPN
bibechana-4828	10	23	,	,	PUNCT
bibechana-4828	10	24	edp	edp	PROPN
bibechana-4828	10	25	(	(	PUNCT
bibechana-4828	10	26	ethylene	ethylene	NOUN
bibechana-4828	10	27	diamine	diamine	NOUN
bibechana-4828	10	28	,	,	PUNCT
bibechana-4828	10	29	pyrocatechol	pyrocatechol	NOUN
bibechana-4828	10	30	)	)	PUNCT
bibechana-4828	10	31	,	,	PUNCT
bibechana-4828	10	32	tmh	tmh	PROPN
bibechana-4828	10	33	(	(	PUNCT
bibechana-4828	10	34	tetryl	tetryl	PROPN
bibechana-4828	10	35	methylammonium	methylammonium	PROPN
bibechana-4828	10	36	hydroxide	hydroxide	NOUN
bibechana-4828	10	37	)	)	PUNCT
bibechana-4828	10	38	,	,	PUNCT
bibechana-4828	10	39	etc	etc	X
bibechana-4828	10	40	.	.	X
bibechana-4828	11	1	the	the	DET
bibechana-4828	11	2	mechanisms	mechanism	NOUN
bibechana-4828	11	3	of	of	ADP
bibechana-4828	11	4	anisotropic	anisotropic	NOUN
bibechana-4828	11	5	etching	etch	VERB
bibechana-4828	11	6	of	of	ADP
bibechana-4828	11	7	silicon	silicon	NOUN
bibechana-4828	11	8	and	and	CCONJ
bibechana-4828	11	9	the	the	DET
bibechana-4828	11	10	etching	etch	VERB
bibechana-4828	11	11	processes	process	NOUN
bibechana-4828	11	12	that	that	PRON
bibechana-4828	11	13	occur	occur	VERB
bibechana-4828	11	14	in	in	ADP
bibechana-4828	11	15	the	the	DET
bibechana-4828	11	16	crystalline	crystalline	NOUN
bibechana-4828	11	17	surfaces	surface	NOUN
bibechana-4828	11	18	are	be	AUX
bibechana-4828	11	19	not	not	PART
bibechana-4828	11	20	well	well	ADV
bibechana-4828	11	21	known	know	VERB
bibechana-4828	11	22	.	.	PUNCT
bibechana-4828	12	1	many	many	ADJ
bibechana-4828	12	2	authors	author	NOUN
bibechana-4828	12	3	have	have	AUX
bibechana-4828	12	4	suggested	suggest	VERB
bibechana-4828	12	5	a	a	DET
bibechana-4828	12	6	different	different	ADJ
bibechana-4828	12	7	sort	sort	NOUN
bibechana-4828	12	8	of	of	ADP
bibechana-4828	12	9	mechanism	mechanism	NOUN
bibechana-4828	12	10	for	for	ADP
bibechana-4828	12	11	the	the	DET
bibechana-4828	12	12	reactions	reaction	NOUN
bibechana-4828	12	13	to	to	PART
bibechana-4828	12	14	explain	explain	VERB
bibechana-4828	12	15	the	the	DET
bibechana-4828	12	16	anisotropic	anisotropic	NOUN
bibechana-4828	12	17	behaviour	behaviour	NOUN
bibechana-4828	12	18	of	of	ADP
bibechana-4828	12	19	etching	etch	VERB
bibechana-4828	12	20	of	of	ADP
bibechana-4828	12	21	silicon	silicon	NOUN
bibechana-4828	12	22	in	in	ADP
bibechana-4828	12	23	alkaline	alkaline	NOUN
bibechana-4828	12	24	solutions	solution	NOUN
bibechana-4828	12	25	[	[	X
bibechana-4828	12	26	4	4	NUM
bibechana-4828	12	27	,	,	PUNCT
bibechana-4828	12	28	5	5	NUM
bibechana-4828	12	29	]	]	PUNCT
bibechana-4828	12	30	.	.	PUNCT
bibechana-4828	13	1	seidel	seidel	PROPN
bibechana-4828	13	2	et	et	PROPN
bibechana-4828	13	3	al	al	PROPN
bibechana-4828	14	1	[	[	X
bibechana-4828	14	2	6	6	NUM
bibechana-4828	14	3	]	]	PUNCT
bibechana-4828	14	4	has	have	AUX
bibechana-4828	14	5	proposed	propose	VERB
bibechana-4828	14	6	an	an	DET
bibechana-4828	14	7	electro	electro	ADJ
bibechana-4828	14	8	-	-	PUNCT
bibechana-4828	14	9	chemical	chemical	NOUN
bibechana-4828	14	10	model	model	NOUN
bibechana-4828	14	11	which	which	PRON
bibechana-4828	14	12	involves	involve	VERB
bibechana-4828	14	13	the	the	DET
bibechana-4828	14	14	transfer	transfer	NOUN
bibechana-4828	14	15	of	of	ADP
bibechana-4828	14	16	the	the	DET
bibechana-4828	14	17	electrons	electron	NOUN
bibechana-4828	14	18	from	from	ADP
bibechana-4828	14	19	ions	ion	NOUN
bibechana-4828	14	20	in	in	ADP
bibechana-4828	14	21	the	the	DET
bibechana-4828	14	22	solution	solution	NOUN
bibechana-4828	14	23	to	to	ADP
bibechana-4828	14	24	the	the	DET
bibechana-4828	14	25	crystal	crystal	NOUN
bibechana-4828	14	26	surface	surface	NOUN
bibechana-4828	14	27	.	.	PUNCT
bibechana-4828	15	1	in	in	ADP
bibechana-4828	15	2	this	this	DET
bibechana-4828	15	3	model	model	NOUN
bibechana-4828	15	4	,	,	PUNCT
bibechana-4828	15	5	the	the	DET
bibechana-4828	15	6	rate	rate	NOUN
bibechana-4828	15	7	determining	determine	VERB
bibechana-4828	15	8	step	step	NOUN
bibechana-4828	15	9	is	be	AUX
bibechana-4828	15	10	the	the	DET
bibechana-4828	15	11	transfer	transfer	NOUN
bibechana-4828	15	12	of	of	ADP
bibechana-4828	15	13	electrons	electron	NOUN
bibechana-4828	15	14	from	from	ADP
bibechana-4828	15	15	the	the	DET
bibechana-4828	15	16	surface	surface	NOUN
bibechana-4828	15	17	state	state	NOUN
bibechana-4828	15	18	,	,	PUNCT
bibechana-4828	15	19	which	which	PRON
bibechana-4828	15	20	lies	lie	VERB
bibechana-4828	15	21	in	in	ADP
bibechana-4828	15	22	the	the	DET
bibechana-4828	15	23	forbidden	forbid	VERB
bibechana-4828	15	24	gap	gap	NOUN
bibechana-4828	15	25	,	,	PUNCT
bibechana-4828	15	26	to	to	ADP
bibechana-4828	15	27	the	the	DET
bibechana-4828	15	28	conduction	conduction	NOUN
bibechana-4828	15	29	band	band	NOUN
bibechana-4828	15	30	.	.	PUNCT
bibechana-4828	16	1	this	this	DET
bibechana-4828	16	2	process	process	NOUN
bibechana-4828	16	3	is	be	AUX
bibechana-4828	16	4	thermally	thermally	ADV
bibechana-4828	16	5	activated	activate	VERB
bibechana-4828	16	6	.	.	PUNCT
bibechana-4828	17	1	seidel	seidel	PROPN
bibechana-4828	17	2	states	state	VERB
bibechana-4828	17	3	that	that	SCONJ
bibechana-4828	17	4	the	the	DET
bibechana-4828	17	5	difference	difference	NOUN
bibechana-4828	17	6	in	in	ADP
bibechana-4828	17	7	energy	energy	NOUN
bibechana-4828	17	8	between	between	ADP
bibechana-4828	17	9	final	final	ADJ
bibechana-4828	17	10	and	and	CCONJ
bibechana-4828	17	11	initial	initial	ADJ
bibechana-4828	17	12	state	state	NOUN
bibechana-4828	17	13	contributes	contribute	VERB
bibechana-4828	17	14	significantly	significantly	ADV
bibechana-4828	17	15	to	to	ADP
bibechana-4828	17	16	the	the	DET
bibechana-4828	17	17	macroscopic	macroscopic	ADJ
bibechana-4828	17	18	activation	activation	NOUN
bibechana-4828	17	19	energy	energy	NOUN
bibechana-4828	17	20	.	.	PUNCT
bibechana-4828	18	1	anisotropy	anisotropy	NOUN
bibechana-4828	18	2	can	can	AUX
bibechana-4828	18	3	be	be	AUX
bibechana-4828	18	4	accounted	account	VERB
bibechana-4828	18	5	for	for	ADP
bibechana-4828	18	6	by	by	ADP
bibechana-4828	18	7	the	the	DET
bibechana-4828	18	8	fact	fact	NOUN
bibechana-4828	18	9	that	that	SCONJ
bibechana-4828	18	10	the	the	DET
bibechana-4828	18	11	energy	energy	NOUN
bibechana-4828	18	12	level	level	NOUN
bibechana-4828	18	13	of	of	ADP
bibechana-4828	18	14	the	the	DET
bibechana-4828	18	15	surface	surface	NOUN
bibechana-4828	18	16	state	state	NOUN
bibechana-4828	18	17	depends	depend	VERB
bibechana-4828	18	18	on	on	ADP
bibechana-4828	18	19	the	the	DET
bibechana-4828	18	20	surface	surface	NOUN
bibechana-4828	18	21	orientation	orientation	NOUN
bibechana-4828	18	22	.	.	PUNCT
bibechana-4828	19	1	thus	thus	ADV
bibechana-4828	19	2	the	the	DET
bibechana-4828	19	3	(	(	PUNCT
bibechana-4828	19	4	111	111	NUM
bibechana-4828	19	5	)	)	PUNCT
bibechana-4828	19	6	surface	surface	NOUN
bibechana-4828	19	7	which	which	PRON
bibechana-4828	19	8	exhibits	exhibit	VERB
bibechana-4828	19	9	the	the	DET
bibechana-4828	19	10	highest	high	ADJ
bibechana-4828	19	11	activation	activation	NOUN
bibechana-4828	19	12	energy	energy	NOUN
bibechana-4828	19	13	when	when	SCONJ
bibechana-4828	19	14	etched	etch	VERB
bibechana-4828	19	15	with	with	ADP
bibechana-4828	19	16	koh	koh	PROPN
bibechana-4828	19	17	,	,	PUNCT
bibechana-4828	19	18	has	have	VERB
bibechana-4828	19	19	the	the	DET
bibechana-4828	19	20	lowest	low	ADJ
bibechana-4828	19	21	level	level	NOUN
bibechana-4828	19	22	energy	energy	NOUN
bibechana-4828	19	23	state	state	NOUN
bibechana-4828	19	24	.	.	PUNCT
bibechana-4828	20	1	the	the	DET
bibechana-4828	20	2	(	(	PUNCT
bibechana-4828	20	3	110	110	NUM
bibechana-4828	20	4	)	)	PUNCT
bibechana-4828	20	5	and	and	CCONJ
bibechana-4828	20	6	(	(	PUNCT
bibechana-4828	20	7	100	100	NUM
bibechana-4828	20	8	)	)	PUNCT
bibechana-4828	20	9	planes	plane	NOUN
bibechana-4828	20	10	present	present	ADJ
bibechana-4828	20	11	roughly	roughly	ADV
bibechana-4828	20	12	the	the	DET
bibechana-4828	20	13	same	same	ADJ
bibechana-4828	20	14	level	level	NOUN
bibechana-4828	20	15	below	below	ADP
bibechana-4828	20	16	that	that	PRON
bibechana-4828	20	17	corresponding	correspond	VERB
bibechana-4828	20	18	to	to	ADP
bibechana-4828	20	19	(	(	PUNCT
bibechana-4828	20	20	111	111	NUM
bibechana-4828	20	21	)	)	PUNCT
bibechana-4828	20	22	surface	surface	NOUN
bibechana-4828	20	23	state	state	NOUN
bibechana-4828	20	24	.	.	PUNCT
bibechana-4828	21	1	in	in	ADP
bibechana-4828	21	2	other	other	ADJ
bibechana-4828	21	3	words	word	NOUN
bibechana-4828	21	4	,	,	PUNCT
bibechana-4828	21	5	they	they	PRON
bibechana-4828	21	6	have	have	VERB
bibechana-4828	21	7	approximately	approximately	ADV
bibechana-4828	21	8	the	the	DET
bibechana-4828	21	9	same	same	ADJ
bibechana-4828	21	10	activation	activation	NOUN
bibechana-4828	21	11	energy	energy	NOUN
bibechana-4828	21	12	.	.	PUNCT
bibechana-4828	22	1	on	on	ADP
bibechana-4828	22	2	the	the	DET
bibechana-4828	22	3	other	other	ADJ
bibechana-4828	22	4	hand	hand	NOUN
bibechana-4828	22	5	,	,	PUNCT
bibechana-4828	22	6	elwenspoek	elwenspoek	VERB
bibechana-4828	22	7	[	[	X
bibechana-4828	22	8	7	7	X
bibechana-4828	22	9	]	]	PUNCT
bibechana-4828	22	10	puts	put	VERB
bibechana-4828	22	11	forward	forward	ADV
bibechana-4828	22	12	a	a	DET
bibechana-4828	22	13	model	model	NOUN
bibechana-4828	22	14	inspired	inspire	VERB
bibechana-4828	22	15	from	from	ADP
bibechana-4828	22	16	the	the	DET
bibechana-4828	22	17	crystal	crystal	NOUN
bibechana-4828	22	18	growth	growth	NOUN
bibechana-4828	22	19	theories	theory	NOUN
bibechana-4828	22	20	in	in	ADP
bibechana-4828	22	21	which	which	PRON
bibechana-4828	22	22	the	the	DET
bibechana-4828	22	23	etch	etch	NOUN
bibechana-4828	22	24	rate	rate	NOUN
bibechana-4828	22	25	should	should	AUX
bibechana-4828	22	26	be	be	AUX
bibechana-4828	22	27	governed	govern	VERB
bibechana-4828	22	28	by	by	ADP
bibechana-4828	22	29	a	a	DET
bibechana-4828	22	30	nucleation	nucleation	NOUN
bibechana-4828	22	31	barrier	barrier	NOUN
bibechana-4828	22	32	of	of	ADP
bibechana-4828	22	33	one	one	NUM
bibechana-4828	22	34	atomic	atomic	ADJ
bibechana-4828	22	35	layer	layer	NOUN
bibechana-4828	22	36	deep	deep	ADJ
bibechana-4828	22	37	cavities	cavity	NOUN
bibechana-4828	22	38	and	and	CCONJ
bibechana-4828	22	39	the	the	DET
bibechana-4828	22	40	activation	activation	NOUN
bibechana-4828	22	41	energy	energy	NOUN
bibechana-4828	22	42	depends	depend	VERB
bibechana-4828	22	43	on	on	ADP
bibechana-4828	22	44	the	the	DET
bibechana-4828	22	45	step	step	NOUN
bibechana-4828	22	46	-	-	PUNCT
bibechana-4828	22	47	free	free	ADJ
bibechana-4828	22	48	energy	energy	NOUN
bibechana-4828	22	49	and	and	CCONJ
bibechana-4828	22	50	under	under	ADP
bibechana-4828	22	51	saturation	saturation	NOUN
bibechana-4828	22	52	.	.	PUNCT
bibechana-4828	23	1	shobha	shobha	PROPN
bibechana-4828	23	2	kanta	kanta	PROPN
bibechana-4828	23	3	lamichhane	lamichhane	PROPN
bibechana-4828	23	4	/	/	SYM
bibechana-4828	23	5	bibechana	bibechana	PROPN
bibechana-4828	23	6	8	8	NUM
bibechana-4828	23	7	(	(	PUNCT
bibechana-4828	23	8	2012	2012	NUM
bibechana-4828	23	9	)	)	PUNCT
bibechana-4828	23	10	59	59	NUM
bibechana-4828	23	11	-	-	SYM
bibechana-4828	23	12	65	65	NUM
bibechana-4828	23	13	:	:	PUNCT
bibechana-4828	23	14	bmhss	bmhss	PROPN
bibechana-4828	23	15	,	,	PUNCT
bibechana-4828	23	16	p.60	p.60	PROPN
bibechana-4828	23	17	micro	micro	NOUN
bibechana-4828	23	18	-	-	ADJ
bibechana-4828	23	19	electro	electro	ADJ
bibechana-4828	23	20	mechanical	mechanical	ADJ
bibechana-4828	23	21	structure	structure	NOUN
bibechana-4828	23	22	(	(	PUNCT
bibechana-4828	23	23	mems	mem	NOUN
bibechana-4828	23	24	)	)	PUNCT
bibechana-4828	23	25	devices	device	NOUN
bibechana-4828	23	26	are	be	AUX
bibechana-4828	23	27	the	the	DET
bibechana-4828	23	28	output	output	NOUN
bibechana-4828	23	29	of	of	ADP
bibechana-4828	23	30	either	either	CCONJ
bibechana-4828	23	31	an	an	DET
bibechana-4828	23	32	etching	etch	VERB
bibechana-4828	23	33	process	process	NOUN
bibechana-4828	23	34	(	(	PUNCT
bibechana-4828	23	35	or	or	CCONJ
bibechana-4828	23	36	micromachining	micromachine	VERB
bibechana-4828	23	37	)	)	PUNCT
bibechana-4828	23	38	from	from	ADP
bibechana-4828	23	39	larger	large	ADJ
bibechana-4828	23	40	structures	structure	NOUN
bibechana-4828	23	41	or	or	CCONJ
bibechana-4828	23	42	are	be	AUX
bibechana-4828	23	43	built	build	VERB
bibechana-4828	23	44	up	up	ADP
bibechana-4828	23	45	atom	atom	NOUN
bibechana-4828	23	46	by	by	ADP
bibechana-4828	23	47	atom	atom	NOUN
bibechana-4828	23	48	through	through	ADP
bibechana-4828	23	49	material	material	NOUN
bibechana-4828	23	50	deposition	deposition	NOUN
bibechana-4828	23	51	processes	process	NOUN
bibechana-4828	23	52	.	.	PUNCT
bibechana-4828	24	1	maintaining	maintain	VERB
bibechana-4828	24	2	dimensional	dimensional	ADJ
bibechana-4828	24	3	control	control	NOUN
bibechana-4828	24	4	and	and	CCONJ
bibechana-4828	24	5	retaining	retain	VERB
bibechana-4828	24	6	consistent	consistent	ADJ
bibechana-4828	24	7	mechanical	mechanical	ADJ
bibechana-4828	24	8	property	property	NOUN
bibechana-4828	24	9	is	be	AUX
bibechana-4828	24	10	considerably	considerably	ADV
bibechana-4828	24	11	difficult	difficult	ADJ
bibechana-4828	24	12	because	because	SCONJ
bibechana-4828	24	13	feature	feature	NOUN
bibechana-4828	24	14	sizes	size	NOUN
bibechana-4828	24	15	are	be	AUX
bibechana-4828	24	16	in	in	ADP
bibechana-4828	24	17	the	the	DET
bibechana-4828	24	18	micrometer	micrometer	NOUN
bibechana-4828	24	19	range	range	NOUN
bibechana-4828	24	20	.	.	PUNCT
bibechana-4828	25	1	silicon	silicon	PROPN
bibechana-4828	25	2	mems	mems	PROPN
bibechana-4828	25	3	offer	offer	VERB
bibechana-4828	25	4	these	these	DET
bibechana-4828	25	5	challenges	challenge	NOUN
bibechana-4828	25	6	.	.	PUNCT
bibechana-4828	26	1	formation	formation	NOUN
bibechana-4828	26	2	of	of	ADP
bibechana-4828	26	3	a	a	DET
bibechana-4828	26	4	functional	functional	ADJ
bibechana-4828	26	5	mems	mem	NOUN
bibechana-4828	26	6	structure	structure	NOUN
bibechana-4828	26	7	on	on	ADP
bibechana-4828	26	8	a	a	DET
bibechana-4828	26	9	substrate	substrate	NOUN
bibechana-4828	26	10	,	,	PUNCT
bibechana-4828	26	11	it	it	PRON
bibechana-4828	26	12	is	be	AUX
bibechana-4828	26	13	necessary	necessary	ADJ
bibechana-4828	26	14	to	to	PART
bibechana-4828	26	15	etch	etch	VERB
bibechana-4828	26	16	the	the	DET
bibechana-4828	26	17	thin	thin	ADJ
bibechana-4828	26	18	films	film	NOUN
bibechana-4828	26	19	previously	previously	ADV
bibechana-4828	26	20	deposited	deposit	VERB
bibechana-4828	26	21	or	or	CCONJ
bibechana-4828	26	22	the	the	DET
bibechana-4828	26	23	substrate	substrate	NOUN
bibechana-4828	26	24	itself	itself	PRON
bibechana-4828	26	25	.	.	PUNCT
bibechana-4828	27	1	in	in	ADP
bibechana-4828	27	2	general	general	ADJ
bibechana-4828	27	3	there	there	PRON
bibechana-4828	27	4	are	be	VERB
bibechana-4828	27	5	two	two	NUM
bibechana-4828	27	6	type	type	NOUN
bibechana-4828	27	7	of	of	ADP
bibechana-4828	27	8	etching	etch	VERB
bibechana-4828	27	9	process	process	NOUN
bibechana-4828	27	10	:	:	PUNCT
bibechana-4828	27	11	wet	wet	ADJ
bibechana-4828	27	12	etching	etching	NOUN
bibechana-4828	27	13	,	,	PUNCT
bibechana-4828	27	14	where	where	SCONJ
bibechana-4828	27	15	the	the	DET
bibechana-4828	27	16	material	material	NOUN
bibechana-4828	27	17	is	be	AUX
bibechana-4828	27	18	dissolved	dissolve	VERB
bibechana-4828	27	19	when	when	SCONJ
bibechana-4828	27	20	immersed	immerse	VERB
bibechana-4828	27	21	in	in	ADP
bibechana-4828	27	22	a	a	DET
bibechana-4828	27	23	chemical	chemical	NOUN
bibechana-4828	27	24	solution	solution	NOUN
bibechana-4828	27	25	and	and	CCONJ
bibechana-4828	27	26	,	,	PUNCT
bibechana-4828	27	27	dry	dry	ADJ
bibechana-4828	27	28	etching	etching	NOUN
bibechana-4828	27	29	,	,	PUNCT
bibechana-4828	27	30	where	where	SCONJ
bibechana-4828	27	31	the	the	DET
bibechana-4828	27	32	material	material	NOUN
bibechana-4828	27	33	is	be	AUX
bibechana-4828	27	34	sputtered	sputter	VERB
bibechana-4828	27	35	or	or	CCONJ
bibechana-4828	27	36	dissolved	dissolve	VERB
bibechana-4828	27	37	using	use	VERB
bibechana-4828	27	38	reactive	reactive	ADJ
bibechana-4828	27	39	ions	ion	NOUN
bibechana-4828	27	40	.	.	PUNCT
bibechana-4828	28	1	in	in	ADP
bibechana-4828	28	2	the	the	DET
bibechana-4828	28	3	following	following	NOUN
bibechana-4828	28	4	we	we	PRON
bibechana-4828	28	5	briefly	briefly	ADV
bibechana-4828	28	6	discuss	discuss	VERB
bibechana-4828	28	7	the	the	DET
bibechana-4828	28	8	most	most	ADV
bibechana-4828	28	9	popular	popular	ADJ
bibechana-4828	28	10	technology	technology	NOUN
bibechana-4828	28	11	,	,	PUNCT
bibechana-4828	28	12	wet	wet	ADJ
bibechana-4828	28	13	etching	etching	NOUN
bibechana-4828	28	14	,	,	PUNCT
bibechana-4828	28	15	is	be	AUX
bibechana-4828	28	16	a	a	DET
bibechana-4828	28	17	simplest	simple	ADJ
bibechana-4828	28	18	etching	etch	VERB
bibechana-4828	28	19	technology	technology	NOUN
bibechana-4828	28	20	.	.	PUNCT
bibechana-4828	29	1	all	all	PRON
bibechana-4828	29	2	it	it	PRON
bibechana-4828	29	3	requires	require	VERB
bibechana-4828	29	4	is	be	AUX
bibechana-4828	29	5	a	a	DET
bibechana-4828	29	6	container	container	NOUN
bibechana-4828	29	7	with	with	ADP
bibechana-4828	29	8	a	a	DET
bibechana-4828	29	9	liquid	liquid	ADJ
bibechana-4828	29	10	solution	solution	NOUN
bibechana-4828	29	11	that	that	PRON
bibechana-4828	29	12	will	will	AUX
bibechana-4828	29	13	dissolve	dissolve	VERB
bibechana-4828	29	14	the	the	DET
bibechana-4828	29	15	material	material	NOUN
bibechana-4828	29	16	.	.	PUNCT
bibechana-4828	30	1	unfortunately	unfortunately	ADV
bibechana-4828	30	2	,	,	PUNCT
bibechana-4828	30	3	there	there	PRON
bibechana-4828	30	4	are	be	VERB
bibechana-4828	30	5	complications	complication	NOUN
bibechana-4828	30	6	since	since	SCONJ
bibechana-4828	30	7	a	a	DET
bibechana-4828	30	8	mask	mask	NOUN
bibechana-4828	30	9	is	be	AUX
bibechana-4828	30	10	desired	desire	VERB
bibechana-4828	30	11	to	to	PART
bibechana-4828	30	12	selectively	selectively	ADV
bibechana-4828	30	13	etch	etch	VERB
bibechana-4828	30	14	the	the	DET
bibechana-4828	30	15	material	material	NOUN
bibechana-4828	30	16	.	.	PUNCT
bibechana-4828	31	1	one	one	PRON
bibechana-4828	31	2	must	must	AUX
bibechana-4828	31	3	find	find	VERB
bibechana-4828	31	4	a	a	DET
bibechana-4828	31	5	mask	mask	NOUN
bibechana-4828	31	6	that	that	PRON
bibechana-4828	31	7	will	will	AUX
bibechana-4828	31	8	not	not	PART
bibechana-4828	31	9	dissolve	dissolve	VERB
bibechana-4828	31	10	or	or	CCONJ
bibechana-4828	31	11	at	at	ADP
bibechana-4828	31	12	least	least	ADJ
bibechana-4828	31	13	etch	etch	VERB
bibechana-4828	31	14	much	much	ADV
bibechana-4828	31	15	slower	slow	ADJ
bibechana-4828	31	16	then	then	ADV
bibechana-4828	31	17	the	the	DET
bibechana-4828	31	18	material	material	NOUN
bibechana-4828	31	19	to	to	PART
bibechana-4828	31	20	be	be	AUX
bibechana-4828	31	21	patterned	pattern	VERB
bibechana-4828	31	22	.	.	PUNCT
bibechana-4828	32	1	anisotropic	anisotropic	NOUN
bibechana-4828	32	2	is	be	AUX
bibechana-4828	32	3	contrast	contrast	NOUN
bibechana-4828	32	4	to	to	ADP
bibechana-4828	32	5	isotropic	isotropic	ADJ
bibechana-4828	32	6	etching	etching	NOUN
bibechana-4828	32	7	means	mean	VERB
bibechana-4828	32	8	different	different	ADJ
bibechana-4828	32	9	etch	etch	NOUN
bibechana-4828	32	10	rates	rate	NOUN
bibechana-4828	32	11	in	in	ADP
bibechana-4828	32	12	different	different	ADJ
bibechana-4828	32	13	plane	plane	NOUN
bibechana-4828	32	14	surfaces	surface	NOUN
bibechana-4828	32	15	.	.	PUNCT
bibechana-4828	33	1	the	the	DET
bibechana-4828	33	2	classic	classic	ADJ
bibechana-4828	33	3	example	example	NOUN
bibechana-4828	33	4	of	of	ADP
bibechana-4828	33	5	this	this	PRON
bibechana-4828	33	6	is	be	AUX
bibechana-4828	33	7	the	the	DET
bibechana-4828	33	8	(	(	PUNCT
bibechana-4828	33	9	111	111	NUM
bibechana-4828	33	10	)	)	PUNCT
bibechana-4828	33	11	crystal	crystal	NOUN
bibechana-4828	33	12	plane	plane	NOUN
bibechana-4828	33	13	sidewalls	sidewall	VERB
bibechana-4828	33	14	that	that	PRON
bibechana-4828	33	15	appears	appear	VERB
bibechana-4828	33	16	when	when	SCONJ
bibechana-4828	33	17	etching	etch	VERB
bibechana-4828	33	18	a	a	DET
bibechana-4828	33	19	hole	hole	NOUN
bibechana-4828	33	20	in	in	ADP
bibechana-4828	33	21	(	(	PUNCT
bibechana-4828	33	22	100	100	NUM
bibechana-4828	33	23	)	)	PUNCT
bibechana-4828	33	24	silicon	silicon	NOUN
bibechana-4828	33	25	wafer	wafer	NOUN
bibechana-4828	33	26	in	in	ADP
bibechana-4828	33	27	a	a	DET
bibechana-4828	33	28	chemical	chemical	NOUN
bibechana-4828	33	29	such	such	ADJ
bibechana-4828	33	30	as	as	ADP
bibechana-4828	33	31	koh	koh	PROPN
bibechana-4828	33	32	.	.	PUNCT
bibechana-4828	34	1	the	the	DET
bibechana-4828	34	2	result	result	NOUN
bibechana-4828	34	3	is	be	AUX
bibechana-4828	34	4	a	a	DET
bibechana-4828	34	5	pyramid	pyramid	NOUN
bibechana-4828	34	6	shaped	shape	VERB
bibechana-4828	34	7	whole	whole	ADJ
bibechana-4828	34	8	instead	instead	ADV
bibechana-4828	34	9	of	of	ADP
bibechana-4828	34	10	a	a	DET
bibechana-4828	34	11	hole	hole	NOUN
bibechana-4828	34	12	with	with	ADP
bibechana-4828	34	13	round	round	ADJ
bibechana-4828	34	14	sidewalls	sidewall	NOUN
bibechana-4828	34	15	with	with	ADP
bibechana-4828	34	16	an	an	DET
bibechana-4828	34	17	isotropic	isotropic	ADJ
bibechana-4828	34	18	etchant	etchant	NOUN
bibechana-4828	34	19	.	.	PUNCT
bibechana-4828	35	1	etching	etch	VERB
bibechana-4828	35	2	technologies	technology	NOUN
bibechana-4828	35	3	in	in	ADP
bibechana-4828	35	4	thin	thin	ADJ
bibechana-4828	35	5	film	film	NOUN
bibechana-4828	35	6	processes	process	NOUN
bibechana-4828	35	7	play	play	VERB
bibechana-4828	35	8	an	an	DET
bibechana-4828	35	9	important	important	ADJ
bibechana-4828	35	10	role	role	NOUN
bibechana-4828	35	11	in	in	ADP
bibechana-4828	35	12	the	the	DET
bibechana-4828	35	13	semiconductor	semiconductor	NOUN
bibechana-4828	35	14	industry	industry	NOUN
bibechana-4828	35	15	.	.	PUNCT
bibechana-4828	36	1	wet	wet	ADJ
bibechana-4828	36	2	chemical	chemical	NOUN
bibechana-4828	36	3	etching	etch	VERB
bibechana-4828	36	4	techniques	technique	NOUN
bibechana-4828	36	5	are	be	AUX
bibechana-4828	36	6	used	use	VERB
bibechana-4828	36	7	extensively	extensively	ADV
bibechana-4828	36	8	in	in	ADP
bibechana-4828	36	9	semiconductor	semiconductor	NOUN
bibechana-4828	36	10	processing	processing	NOUN
bibechana-4828	36	11	because	because	SCONJ
bibechana-4828	36	12	of	of	ADP
bibechana-4828	36	13	their	their	PRON
bibechana-4828	36	14	low	low	ADJ
bibechana-4828	36	15	cost	cost	NOUN
bibechana-4828	36	16	,	,	PUNCT
bibechana-4828	36	17	high	high	ADJ
bibechana-4828	36	18	throughput	throughput	NOUN
bibechana-4828	36	19	,	,	PUNCT
bibechana-4828	36	20	and	and	CCONJ
bibechana-4828	36	21	excellent	excellent	ADJ
bibechana-4828	36	22	selectivity	selectivity	NOUN
bibechana-4828	36	23	.	.	PUNCT
bibechana-4828	37	1	important	important	ADJ
bibechana-4828	37	2	progress	progress	NOUN
bibechana-4828	37	3	in	in	ADP
bibechana-4828	37	4	the	the	DET
bibechana-4828	37	5	fabrication	fabrication	NOUN
bibechana-4828	37	6	of	of	ADP
bibechana-4828	37	7	microelectrical	microelectrical	ADJ
bibechana-4828	37	8	structure	structure	NOUN
bibechana-4828	37	9	with	with	ADP
bibechana-4828	37	10	integrated	integrate	VERB
bibechana-4828	37	11	circuits	circuit	NOUN
bibechana-4828	37	12	has	have	AUX
bibechana-4828	37	13	been	be	AUX
bibechana-4828	37	14	achieved	achieve	VERB
bibechana-4828	37	15	.	.	PUNCT
bibechana-4828	38	1	though	though	SCONJ
bibechana-4828	38	2	detailed	detailed	ADJ
bibechana-4828	38	3	kinetic	kinetic	NOUN
bibechana-4828	38	4	and	and	CCONJ
bibechana-4828	38	5	electrochemical	electrochemical	ADJ
bibechana-4828	38	6	measurements	measurement	NOUN
bibechana-4828	38	7	have	have	AUX
bibechana-4828	38	8	not	not	PART
bibechana-4828	38	9	been	be	AUX
bibechana-4828	38	10	made	make	VERB
bibechana-4828	38	11	,	,	PUNCT
bibechana-4828	38	12	koh	koh	PROPN
bibechana-4828	38	13	solutions	solution	NOUN
bibechana-4828	38	14	are	be	AUX
bibechana-4828	38	15	extensively	extensively	ADV
bibechana-4828	38	16	used	use	VERB
bibechana-4828	38	17	for	for	ADP
bibechana-4828	38	18	the	the	DET
bibechana-4828	38	19	etching	etching	NOUN
bibechana-4828	38	20	of	of	ADP
bibechana-4828	38	21	single	single	ADJ
bibechana-4828	38	22	crystal	crystal	NOUN
bibechana-4828	38	23	silicon	silicon	NOUN
bibechana-4828	39	1	[	[	X
bibechana-4828	39	2	8	8	NUM
bibechana-4828	39	3	,	,	PUNCT
bibechana-4828	39	4	9	9	NUM
bibechana-4828	39	5	]	]	PUNCT
bibechana-4828	39	6	.	.	PUNCT
bibechana-4828	40	1	fabrication	fabrication	NOUN
bibechana-4828	40	2	of	of	ADP
bibechana-4828	40	3	umos	umos	ADJ
bibechana-4828	40	4	transistors	transistor	NOUN
bibechana-4828	40	5	on	on	ADP
bibechana-4828	40	6	silicon	silicon	NOUN
bibechana-4828	40	7	(	(	PUNCT
bibechana-4828	40	8	111	111	NUM
bibechana-4828	40	9	)	)	PUNCT
bibechana-4828	40	10	wafers	wafer	NOUN
bibechana-4828	40	11	for	for	ADP
bibechana-4828	40	12	high	high	ADJ
bibechana-4828	40	13	power	power	NOUN
bibechana-4828	40	14	and	and	CCONJ
bibechana-4828	40	15	high	high	ADJ
bibechana-4828	40	16	current	current	ADJ
bibechana-4828	40	17	densities	density	NOUN
bibechana-4828	40	18	has	have	AUX
bibechana-4828	40	19	been	be	AUX
bibechana-4828	40	20	achieved	achieve	VERB
bibechana-4828	40	21	by	by	ADP
bibechana-4828	40	22	applying	apply	VERB
bibechana-4828	40	23	koh	koh	PROPN
bibechana-4828	40	24	anisotropic	anisotropic	NOUN
bibechana-4828	40	25	wet	wet	ADJ
bibechana-4828	40	26	etching	etch	VERB
bibechana-4828	40	27	to	to	ADP
bibechana-4828	40	28	the	the	DET
bibechana-4828	40	29	silicon	silicon	NOUN
bibechana-4828	40	30	substrate	substrate	NOUN
bibechana-4828	40	31	.	.	PUNCT
bibechana-4828	41	1	other	other	ADJ
bibechana-4828	41	2	applications	application	NOUN
bibechana-4828	41	3	of	of	ADP
bibechana-4828	41	4	koh	koh	PROPN
bibechana-4828	41	5	wet	wet	ADJ
bibechana-4828	41	6	etching	etch	VERB
bibechana-4828	41	7	include	include	VERB
bibechana-4828	41	8	the	the	DET
bibechana-4828	41	9	fabrication	fabrication	NOUN
bibechana-4828	41	10	of	of	ADP
bibechana-4828	41	11	vmosfets	vmosfet	NOUN
bibechana-4828	41	12	,	,	PUNCT
bibechana-4828	41	13	radio	radio	NOUN
bibechana-4828	41	14	frequency	frequency	NOUN
bibechana-4828	41	15	amplifiers	amplifier	NOUN
bibechana-4828	41	16	,	,	PUNCT
bibechana-4828	41	17	power	power	NOUN
bibechana-4828	41	18	supplies	supply	NOUN
bibechana-4828	41	19	,	,	PUNCT
bibechana-4828	41	20	and	and	CCONJ
bibechana-4828	41	21	microcomputers	microcomputer	NOUN
bibechana-4828	41	22	[	[	X
bibechana-4828	41	23	10	10	NUM
bibechana-4828	41	24	]	]	PUNCT
bibechana-4828	41	25	.	.	PUNCT
bibechana-4828	42	1	using	use	VERB
bibechana-4828	42	2	its	its	PRON
bibechana-4828	42	3	selective	selective	ADJ
bibechana-4828	42	4	and	and	CCONJ
bibechana-4828	42	5	anisotropic	anisotropic	NOUN
bibechana-4828	42	6	etching	etch	VERB
bibechana-4828	42	7	properties	property	NOUN
bibechana-4828	42	8	,	,	PUNCT
bibechana-4828	42	9	koh	koh	PROPN
bibechana-4828	42	10	wet	wet	PROPN
bibechana-4828	42	11	etching	etch	VERB
bibechana-4828	42	12	has	have	AUX
bibechana-4828	42	13	also	also	ADV
bibechana-4828	42	14	been	be	AUX
bibechana-4828	42	15	applied	apply	VERB
bibechana-4828	42	16	to	to	PART
bibechana-4828	42	17	yield	yield	VERB
bibechana-4828	42	18	such	such	ADJ
bibechana-4828	42	19	devices	device	NOUN
bibechana-4828	42	20	as	as	ADP
bibechana-4828	42	21	field	field	NOUN
bibechana-4828	42	22	emission	emission	NOUN
bibechana-4828	42	23	devices	device	NOUN
bibechana-4828	42	24	,	,	PUNCT
bibechana-4828	42	25	optical	optical	ADJ
bibechana-4828	42	26	waveguides	waveguide	NOUN
bibechana-4828	42	27	,	,	PUNCT
bibechana-4828	42	28	pressure	pressure	NOUN
bibechana-4828	42	29	sensors	sensor	NOUN
bibechana-4828	42	30	and	and	CCONJ
bibechana-4828	42	31	ink	ink	NOUN
bibechana-4828	42	32	nozzles	nozzle	NOUN
bibechana-4828	42	33	[	[	X
bibechana-4828	42	34	11	11	NUM
bibechana-4828	42	35	]	]	PUNCT
bibechana-4828	42	36	.	.	PUNCT
bibechana-4828	43	1	koh	koh	PROPN
bibechana-4828	43	2	wet	wet	ADJ
bibechana-4828	43	3	etching	etch	VERB
bibechana-4828	43	4	is	be	AUX
bibechana-4828	43	5	one	one	NUM
bibechana-4828	43	6	of	of	ADP
bibechana-4828	43	7	the	the	DET
bibechana-4828	43	8	old	old	ADJ
bibechana-4828	43	9	anisotropic	anisotropic	NOUN
bibechana-4828	43	10	orientation	orientation	NOUN
bibechana-4828	43	11	dependent	dependent	ADJ
bibechana-4828	43	12	wet	wet	ADJ
bibechana-4828	43	13	etching	etch	VERB
bibechana-4828	43	14	techniques	technique	NOUN
bibechana-4828	43	15	.	.	PUNCT
bibechana-4828	44	1	etching	etch	VERB
bibechana-4828	44	2	of	of	ADP
bibechana-4828	44	3	(	(	PUNCT
bibechana-4828	44	4	100	100	NUM
bibechana-4828	44	5	)	)	PUNCT
bibechana-4828	44	6	oriented	orient	VERB
bibechana-4828	44	7	silicon	silicon	NOUN
bibechana-4828	44	8	using	use	VERB
bibechana-4828	44	9	aqueous	aqueous	ADJ
bibechana-4828	44	10	koh	koh	PROPN
bibechana-4828	44	11	creates	create	VERB
bibechana-4828	44	12	v	v	ADV
bibechana-4828	44	13	-	-	PUNCT
bibechana-4828	44	14	shaped	shape	VERB
bibechana-4828	44	15	grooves	groove	NOUN
bibechana-4828	44	16	with	with	ADP
bibechana-4828	44	17	(	(	PUNCT
bibechana-4828	44	18	111	111	NUM
bibechana-4828	44	19	)	)	PUNCT
bibechana-4828	44	20	planes	plane	NOUN
bibechana-4828	44	21	at	at	ADP
bibechana-4828	44	22	an	an	DET
bibechana-4828	44	23	angle	angle	NOUN
bibechana-4828	44	24	of	of	ADP
bibechana-4828	44	25	54.74	54.74	NUM
bibechana-4828	44	26	°	°	NOUN
bibechana-4828	44	27	from	from	ADP
bibechana-4828	44	28	the	the	DET
bibechana-4828	44	29	(	(	PUNCT
bibechana-4828	44	30	100	100	NUM
bibechana-4828	44	31	)	)	PUNCT
bibechana-4828	44	32	surface	surface	NOUN
bibechana-4828	44	33	.	.	PUNCT
bibechana-4828	45	1	koh	koh	PROPN
bibechana-4828	45	2	solution	solution	NOUN
bibechana-4828	45	3	can	can	AUX
bibechana-4828	45	4	also	also	ADV
bibechana-4828	45	5	be	be	AUX
bibechana-4828	45	6	used	use	VERB
bibechana-4828	45	7	to	to	PART
bibechana-4828	45	8	produce	produce	VERB
bibechana-4828	45	9	mesa	mesa	NOUN
bibechana-4828	45	10	structures	structure	NOUN
bibechana-4828	45	11	.	.	PUNCT
bibechana-4828	46	1	there	there	PRON
bibechana-4828	46	2	are	be	VERB
bibechana-4828	46	3	several	several	ADJ
bibechana-4828	46	4	models	model	NOUN
bibechana-4828	46	5	proposed	propose	VERB
bibechana-4828	46	6	for	for	ADP
bibechana-4828	46	7	the	the	DET
bibechana-4828	46	8	silicon	silicon	NOUN
bibechana-4828	46	9	etching	etch	VERB
bibechana-4828	46	10	mechanism	mechanism	NOUN
bibechana-4828	46	11	in	in	ADP
bibechana-4828	46	12	aqueous	aqueous	PROPN
bibechana-4828	46	13	koh	koh	PROPN
bibechana-4828	46	14	.	.	PUNCT
bibechana-4828	47	1	bean	bean	PROPN
bibechana-4828	47	2	and	and	CCONJ
bibechana-4828	47	3	runyan	runyan	PROPN
bibechana-4828	47	4	found	find	VERB
bibechana-4828	47	5	that	that	SCONJ
bibechana-4828	47	6	the	the	DET
bibechana-4828	47	7	slow	slow	ADJ
bibechana-4828	47	8	etch	etch	NOUN
bibechana-4828	47	9	rate	rate	NOUN
bibechana-4828	47	10	in	in	ADP
bibechana-4828	47	11	the	the	DET
bibechana-4828	47	12	(	(	PUNCT
bibechana-4828	47	13	111	111	NUM
bibechana-4828	47	14	)	)	PUNCT
bibechana-4828	47	15	direction	direction	NOUN
bibechana-4828	47	16	is	be	AUX
bibechana-4828	47	17	a	a	DET
bibechana-4828	47	18	consequence	consequence	NOUN
bibechana-4828	47	19	of	of	ADP
bibechana-4828	47	20	the	the	DET
bibechana-4828	47	21	diamond	diamond	NOUN
bibechana-4828	47	22	lattice	lattice	NOUN
bibechana-4828	47	23	structure	structure	NOUN
bibechana-4828	47	24	because	because	SCONJ
bibechana-4828	47	25	the	the	DET
bibechana-4828	47	26	(	(	PUNCT
bibechana-4828	47	27	111	111	NUM
bibechana-4828	47	28	)	)	PUNCT
bibechana-4828	47	29	plane	plane	NOUN
bibechana-4828	47	30	is	be	AUX
bibechana-4828	47	31	a	a	DET
bibechana-4828	47	32	double	double	ADJ
bibechana-4828	47	33	layer	layer	NOUN
bibechana-4828	47	34	bound	bind	VERB
bibechana-4828	47	35	together	together	ADV
bibechana-4828	47	36	by	by	ADP
bibechana-4828	47	37	more	more	ADJ
bibechana-4828	47	38	atomic	atomic	ADJ
bibechana-4828	47	39	bonds	bond	NOUN
bibechana-4828	47	40	than	than	ADP
bibechana-4828	47	41	that	that	PRON
bibechana-4828	47	42	of	of	ADP
bibechana-4828	47	43	other	other	ADJ
bibechana-4828	47	44	planes	plane	NOUN
bibechana-4828	47	45	.	.	PUNCT
bibechana-4828	48	1	glembocki	glembocki	PROPN
bibechana-4828	48	2	et	et	PROPN
bibechana-4828	48	3	al	al	PROPN
bibechana-4828	48	4	.	.	PROPN
bibechana-4828	48	5	proposed	propose	VERB
bibechana-4828	48	6	an	an	DET
bibechana-4828	48	7	electrochemical	electrochemical	ADJ
bibechana-4828	48	8	reaction	reaction	NOUN
bibechana-4828	48	9	mechanism	mechanism	NOUN
bibechana-4828	48	10	that	that	PRON
bibechana-4828	48	11	exists	exist	VERB
bibechana-4828	48	12	in	in	ADP
bibechana-4828	48	13	the	the	DET
bibechana-4828	48	14	rate	rate	NOUN
bibechana-4828	48	15	determining	determine	VERB
bibechana-4828	48	16	step	step	NOUN
bibechana-4828	48	17	for	for	ADP
bibechana-4828	48	18	koh	koh	PROPN
bibechana-4828	48	19	etching	etch	VERB
bibechana-4828	48	20	.	.	PUNCT
bibechana-4828	49	1	a	a	DET
bibechana-4828	49	2	compromise	compromise	NOUN
bibechana-4828	49	3	model	model	NOUN
bibechana-4828	49	4	was	be	AUX
bibechana-4828	49	5	proposed	propose	VERB
bibechana-4828	49	6	by	by	ADP
bibechana-4828	49	7	seidel	seidel	PROPN
bibechana-4828	49	8	et	et	PROPN
bibechana-4828	49	9	al	al	PROPN
bibechana-4828	49	10	.	.	PROPN
bibechana-4828	49	11	in	in	ADP
bibechana-4828	49	12	1990	1990	NUM
bibechana-4828	49	13	,	,	PUNCT
bibechana-4828	49	14	assuming	assume	VERB
bibechana-4828	49	15	that	that	SCONJ
bibechana-4828	49	16	electrochemical	electrochemical	ADJ
bibechana-4828	49	17	reactions	reaction	NOUN
bibechana-4828	49	18	dominate	dominate	VERB
bibechana-4828	49	19	during	during	ADP
bibechana-4828	49	20	etching	etch	VERB
bibechana-4828	49	21	and	and	CCONJ
bibechana-4828	49	22	that	that	SCONJ
bibechana-4828	49	23	anisotropic	anisotropic	NOUN
bibechana-4828	49	24	etching	etch	VERB
bibechana-4828	49	25	was	be	AUX
bibechana-4828	49	26	caused	cause	VERB
bibechana-4828	49	27	by	by	ADP
bibechana-4828	49	28	the	the	DET
bibechana-4828	49	29	orientation	orientation	NOUN
bibechana-4828	49	30	-	-	PUNCT
bibechana-4828	49	31	dependent	dependent	ADJ
bibechana-4828	49	32	number	number	NOUN
bibechana-4828	49	33	of	of	ADP
bibechana-4828	49	34	dangling	dangle	VERB
bibechana-4828	49	35	bonds	bond	NOUN
bibechana-4828	49	36	available	available	ADJ
bibechana-4828	49	37	per	per	ADP
bibechana-4828	49	38	surface	surface	NOUN
bibechana-4828	49	39	area	area	NOUN
bibechana-4828	49	40	.	.	PUNCT
bibechana-4828	50	1	the	the	DET
bibechana-4828	50	2	(	(	PUNCT
bibechana-4828	50	3	100	100	NUM
bibechana-4828	50	4	)	)	PUNCT
bibechana-4828	50	5	silicon	silicon	NOUN
bibechana-4828	50	6	surface	surface	NOUN
bibechana-4828	50	7	etches	etche	NOUN
bibechana-4828	50	8	faster	fast	ADV
bibechana-4828	50	9	than	than	ADP
bibechana-4828	50	10	the	the	DET
bibechana-4828	50	11	(	(	PUNCT
bibechana-4828	50	12	111	111	NUM
bibechana-4828	50	13	)	)	PUNCT
bibechana-4828	50	14	because	because	SCONJ
bibechana-4828	50	15	the	the	DET
bibechana-4828	50	16	free	free	ADJ
bibechana-4828	50	17	surface	surface	NOUN
bibechana-4828	50	18	of	of	ADP
bibechana-4828	50	19	(	(	PUNCT
bibechana-4828	50	20	100	100	NUM
bibechana-4828	50	21	)	)	PUNCT
bibechana-4828	50	22	silicon	silicon	NOUN
bibechana-4828	50	23	is	be	AUX
bibechana-4828	50	24	attacked	attack	VERB
bibechana-4828	50	25	by	by	ADP
bibechana-4828	50	26	one	one	NUM
bibechana-4828	50	27	oh	oh	INTJ
bibechana-4828	50	28	per	per	ADP
bibechana-4828	50	29	silicon	silicon	NOUN
bibechana-4828	50	30	atom	atom	NOUN
bibechana-4828	50	31	,	,	PUNCT
bibechana-4828	50	32	whereas	whereas	SCONJ
bibechana-4828	50	33	the	the	DET
bibechana-4828	50	34	(	(	PUNCT
bibechana-4828	50	35	111	111	NUM
bibechana-4828	50	36	)	)	PUNCT
bibechana-4828	50	37	silicon	silicon	NOUN
bibechana-4828	50	38	surface	surface	NOUN
bibechana-4828	50	39	is	be	AUX
bibechana-4828	50	40	attacked	attack	VERB
bibechana-4828	50	41	by	by	ADP
bibechana-4828	50	42	two	two	NUM
bibechana-4828	50	43	oh	oh	INTJ
bibechana-4828	50	44	per	per	ADP
bibechana-4828	50	45	silicon	silicon	NOUN
bibechana-4828	50	46	atoms	atom	NOUN
bibechana-4828	50	47	[	[	X
bibechana-4828	50	48	12	12	NUM
bibechana-4828	50	49	]	]	PUNCT
bibechana-4828	50	50	.	.	PUNCT
bibechana-4828	51	1	although	although	SCONJ
bibechana-4828	51	2	the	the	DET
bibechana-4828	51	3	mechanisms	mechanism	NOUN
bibechana-4828	51	4	are	be	AUX
bibechana-4828	51	5	not	not	PART
bibechana-4828	51	6	clear	clear	ADJ
bibechana-4828	51	7	and	and	CCONJ
bibechana-4828	51	8	need	need	VERB
bibechana-4828	51	9	to	to	PART
bibechana-4828	51	10	be	be	AUX
bibechana-4828	51	11	answer	answer	VERB
bibechana-4828	51	12	all	all	DET
bibechana-4828	51	13	these	these	DET
bibechana-4828	51	14	questions	question	NOUN
bibechana-4828	51	15	.	.	PUNCT
bibechana-4828	52	1	the	the	DET
bibechana-4828	52	2	approach	approach	NOUN
bibechana-4828	52	3	followed	follow	VERB
bibechana-4828	52	4	so	so	SCONJ
bibechana-4828	52	5	as	as	SCONJ
bibechana-4828	52	6	to	to	PART
bibechana-4828	52	7	determine	determine	VERB
bibechana-4828	52	8	the	the	DET
bibechana-4828	52	9	significant	significant	ADJ
bibechana-4828	52	10	factor	factor	NOUN
bibechana-4828	52	11	in	in	ADP
bibechana-4828	52	12	a	a	DET
bibechana-4828	52	13	given	give	VERB
bibechana-4828	52	14	electrochemical	electrochemical	ADJ
bibechana-4828	52	15	process	process	NOUN
bibechana-4828	52	16	and	and	CCONJ
bibechana-4828	52	17	their	their	PRON
bibechana-4828	52	18	quantification	quantification	NOUN
bibechana-4828	52	19	are	be	AUX
bibechana-4828	52	20	prime	prime	ADJ
bibechana-4828	52	21	importance	importance	NOUN
bibechana-4828	52	22	from	from	ADP
bibechana-4828	52	23	technological	technological	ADJ
bibechana-4828	52	24	point	point	NOUN
bibechana-4828	52	25	of	of	ADP
bibechana-4828	52	26	view	view	NOUN
bibechana-4828	52	27	.	.	PUNCT
bibechana-4828	53	1	such	such	ADJ
bibechana-4828	53	2	proposed	propose	VERB
bibechana-4828	53	3	quires	quire	NOUN
bibechana-4828	53	4	are	be	AUX
bibechana-4828	53	5	being	be	AUX
bibechana-4828	53	6	addressed	address	VERB
bibechana-4828	53	7	in	in	ADP
bibechana-4828	53	8	this	this	DET
bibechana-4828	53	9	work	work	NOUN
bibechana-4828	53	10	.	.	PUNCT
bibechana-4828	54	1	if	if	SCONJ
bibechana-4828	54	2	we	we	PRON
bibechana-4828	54	3	have	have	VERB
bibechana-4828	54	4	answer	answer	NOUN
bibechana-4828	54	5	of	of	ADP
bibechana-4828	54	6	all	all	DET
bibechana-4828	54	7	these	these	DET
bibechana-4828	54	8	quires	quire	NOUN
bibechana-4828	54	9	in	in	ADP
bibechana-4828	54	10	hand	hand	NOUN
bibechana-4828	54	11	,	,	PUNCT
bibechana-4828	54	12	then	then	ADV
bibechana-4828	54	13	there	there	PRON
bibechana-4828	54	14	is	be	VERB
bibechana-4828	54	15	no	no	DET
bibechana-4828	54	16	doubt	doubt	NOUN
bibechana-4828	54	17	of	of	ADP
bibechana-4828	54	18	etching	etch	VERB
bibechana-4828	54	19	silicon	silicon	NOUN
bibechana-4828	54	20	in	in	ADP
bibechana-4828	54	21	aqueous	aqueous	ADJ
bibechana-4828	54	22	koh	koh	PROPN
bibechana-4828	54	23	is	be	AUX
bibechana-4828	54	24	of	of	ADP
bibechana-4828	54	25	both	both	CCONJ
bibechana-4828	54	26	technological	technological	ADJ
bibechana-4828	54	27	and	and	CCONJ
bibechana-4828	54	28	fundamental	fundamental	ADJ
bibechana-4828	54	29	importance	importance	NOUN
bibechana-4828	54	30	.	.	PUNCT
bibechana-4828	55	1	etching	etch	VERB
bibechana-4828	55	2	of	of	ADP
bibechana-4828	55	3	(	(	PUNCT
bibechana-4828	55	4	100	100	NUM
bibechana-4828	55	5	)	)	PUNCT
bibechana-4828	55	6	oriented	orient	VERB
bibechana-4828	55	7	silicon	silicon	NOUN
bibechana-4828	55	8	using	use	VERB
bibechana-4828	55	9	aqueous	aqueous	ADJ
bibechana-4828	55	10	koh	koh	PROPN
bibechana-4828	55	11	creates	create	VERB
bibechana-4828	55	12	v	v	ADV
bibechana-4828	55	13	-	-	PUNCT
bibechana-4828	55	14	shaped	shape	VERB
bibechana-4828	55	15	grooves	groove	NOUN
bibechana-4828	55	16	with	with	ADP
bibechana-4828	55	17	(	(	PUNCT
bibechana-4828	55	18	111	111	NUM
bibechana-4828	55	19	)	)	PUNCT
bibechana-4828	55	20	planes	plane	NOUN
bibechana-4828	55	21	at	at	ADP
bibechana-4828	55	22	an	an	DET
bibechana-4828	55	23	angle	angle	NOUN
bibechana-4828	55	24	of	of	ADP
bibechana-4828	55	25	54.74	54.74	NUM
bibechana-4828	55	26	°	°	NOUN
bibechana-4828	55	27	from	from	ADP
bibechana-4828	55	28	the	the	DET
bibechana-4828	55	29	(	(	PUNCT
bibechana-4828	55	30	100	100	NUM
bibechana-4828	55	31	)	)	PUNCT
bibechana-4828	55	32	surface	surface	NOUN
bibechana-4828	55	33	.	.	PUNCT
bibechana-4828	56	1	koh	koh	PROPN
bibechana-4828	56	2	solution	solution	NOUN
bibechana-4828	56	3	can	can	AUX
bibechana-4828	56	4	also	also	ADV
bibechana-4828	56	5	be	be	AUX
bibechana-4828	56	6	used	use	VERB
bibechana-4828	56	7	to	to	PART
bibechana-4828	56	8	produce	produce	VERB
bibechana-4828	56	9	mesa	mesa	NOUN
bibechana-4828	56	10	structures	structure	NOUN
bibechana-4828	56	11	.	.	PUNCT
bibechana-4828	57	1	there	there	PRON
bibechana-4828	57	2	are	be	VERB
bibechana-4828	57	3	several	several	ADJ
bibechana-4828	57	4	models	model	NOUN
bibechana-4828	57	5	proposed	propose	VERB
bibechana-4828	57	6	for	for	ADP
bibechana-4828	57	7	the	the	DET
bibechana-4828	57	8	silicon	silicon	NOUN
bibechana-4828	57	9	etching	etch	VERB
bibechana-4828	57	10	mechanism	mechanism	NOUN
bibechana-4828	57	11	in	in	ADP
bibechana-4828	57	12	aqueous	aqueous	PROPN
bibechana-4828	57	13	koh	koh	PROPN
bibechana-4828	57	14	.	.	PUNCT
bibechana-4828	58	1	bean	bean	PROPN
bibechana-4828	58	2	and	and	CCONJ
bibechana-4828	58	3	runyan	runyan	PROPN
bibechana-4828	58	4	found	find	VERB
bibechana-4828	58	5	that	that	SCONJ
bibechana-4828	58	6	the	the	DET
bibechana-4828	58	7	slow	slow	ADJ
bibechana-4828	58	8	etch	etch	NOUN
bibechana-4828	58	9	rate	rate	NOUN
bibechana-4828	58	10	in	in	ADP
bibechana-4828	58	11	the	the	DET
bibechana-4828	58	12	(	(	PUNCT
bibechana-4828	58	13	111	111	NUM
bibechana-4828	58	14	)	)	PUNCT
bibechana-4828	58	15	direction	direction	NOUN
bibechana-4828	58	16	is	be	AUX
bibechana-4828	58	17	a	a	DET
bibechana-4828	58	18	consequence	consequence	NOUN
bibechana-4828	58	19	of	of	ADP
bibechana-4828	58	20	shobha	shobha	NOUN
bibechana-4828	58	21	kanta	kanta	PROPN
bibechana-4828	58	22	lamichhane	lamichhane	PROPN
bibechana-4828	58	23	/	/	SYM
bibechana-4828	58	24	bibechana	bibechana	PROPN
bibechana-4828	58	25	8	8	NUM
bibechana-4828	58	26	(	(	PUNCT
bibechana-4828	58	27	2012	2012	NUM
bibechana-4828	58	28	)	)	PUNCT
bibechana-4828	58	29	59	59	NUM
bibechana-4828	58	30	-	-	SYM
bibechana-4828	58	31	65	65	NUM
bibechana-4828	58	32	:	:	PUNCT
bibechana-4828	58	33	bmhss	bmhss	PROPN
bibechana-4828	58	34	,	,	PUNCT
bibechana-4828	58	35	p.61	p.61	PRON
bibechana-4828	58	36	the	the	DET
bibechana-4828	58	37	diamond	diamond	NOUN
bibechana-4828	58	38	lattice	lattice	NOUN
bibechana-4828	58	39	structure	structure	NOUN
bibechana-4828	58	40	because	because	SCONJ
bibechana-4828	58	41	the	the	DET
bibechana-4828	58	42	(	(	PUNCT
bibechana-4828	58	43	111	111	NUM
bibechana-4828	58	44	)	)	PUNCT
bibechana-4828	58	45	plane	plane	NOUN
bibechana-4828	58	46	is	be	AUX
bibechana-4828	58	47	a	a	DET
bibechana-4828	58	48	double	double	ADJ
bibechana-4828	58	49	layer	layer	NOUN
bibechana-4828	58	50	bound	bind	VERB
bibechana-4828	58	51	together	together	ADV
bibechana-4828	58	52	by	by	ADP
bibechana-4828	58	53	more	more	ADJ
bibechana-4828	58	54	atomic	atomic	ADJ
bibechana-4828	58	55	bonds	bond	NOUN
bibechana-4828	58	56	than	than	ADP
bibechana-4828	58	57	that	that	PRON
bibechana-4828	58	58	of	of	ADP
bibechana-4828	58	59	other	other	ADJ
bibechana-4828	58	60	planes	plane	NOUN
bibechana-4828	59	1	[	[	X
bibechana-4828	59	2	10	10	NUM
bibechana-4828	59	3	]	]	PUNCT
bibechana-4828	59	4	.	.	PUNCT
bibechana-4828	60	1	a	a	DET
bibechana-4828	60	2	compromise	compromise	NOUN
bibechana-4828	60	3	model	model	NOUN
bibechana-4828	60	4	was	be	AUX
bibechana-4828	60	5	proposed	propose	VERB
bibechana-4828	60	6	by	by	ADP
bibechana-4828	60	7	assuming	assume	VERB
bibechana-4828	60	8	electrochemical	electrochemical	ADJ
bibechana-4828	60	9	reactions	reaction	NOUN
bibechana-4828	60	10	dominate	dominate	VERB
bibechana-4828	60	11	during	during	ADP
bibechana-4828	60	12	etching	etch	VERB
bibechana-4828	60	13	and	and	CCONJ
bibechana-4828	60	14	that	that	SCONJ
bibechana-4828	60	15	anisotropic	anisotropic	NOUN
bibechana-4828	60	16	etching	etch	VERB
bibechana-4828	60	17	was	be	AUX
bibechana-4828	60	18	caused	cause	VERB
bibechana-4828	60	19	by	by	ADP
bibechana-4828	60	20	the	the	DET
bibechana-4828	60	21	orientation	orientation	NOUN
bibechana-4828	60	22	-	-	PUNCT
bibechana-4828	60	23	dependent	dependent	ADJ
bibechana-4828	60	24	number	number	NOUN
bibechana-4828	60	25	of	of	ADP
bibechana-4828	60	26	dangling	dangle	VERB
bibechana-4828	60	27	bonds	bond	NOUN
bibechana-4828	60	28	available	available	ADJ
bibechana-4828	60	29	per	per	ADP
bibechana-4828	60	30	surface	surface	NOUN
bibechana-4828	60	31	area	area	NOUN
bibechana-4828	60	32	.	.	PUNCT
bibechana-4828	61	1	the	the	DET
bibechana-4828	61	2	(	(	PUNCT
bibechana-4828	61	3	100	100	NUM
bibechana-4828	61	4	)	)	PUNCT
bibechana-4828	61	5	si	si	NOUN
bibechana-4828	61	6	surface	surface	NOUN
bibechana-4828	61	7	etches	etche	NOUN
bibechana-4828	61	8	faster	fast	ADV
bibechana-4828	61	9	than	than	ADP
bibechana-4828	61	10	the	the	DET
bibechana-4828	61	11	(	(	PUNCT
bibechana-4828	61	12	111	111	NUM
bibechana-4828	61	13	)	)	PUNCT
bibechana-4828	61	14	because	because	SCONJ
bibechana-4828	61	15	the	the	DET
bibechana-4828	61	16	free	free	ADJ
bibechana-4828	61	17	surface	surface	NOUN
bibechana-4828	61	18	of	of	ADP
bibechana-4828	61	19	(	(	PUNCT
bibechana-4828	61	20	100	100	NUM
bibechana-4828	61	21	)	)	PUNCT
bibechana-4828	61	22	si	si	NOUN
bibechana-4828	61	23	is	be	AUX
bibechana-4828	61	24	attacked	attack	VERB
bibechana-4828	61	25	by	by	ADP
bibechana-4828	61	26	one	one	NUM
bibechana-4828	61	27	oh	oh	INTJ
bibechana-4828	61	28	per	per	ADP
bibechana-4828	61	29	si	si	X
bibechana-4828	61	30	atom	atom	NOUN
bibechana-4828	61	31	,	,	PUNCT
bibechana-4828	61	32	whereas	whereas	SCONJ
bibechana-4828	61	33	the	the	DET
bibechana-4828	61	34	(	(	PUNCT
bibechana-4828	61	35	111	111	NUM
bibechana-4828	61	36	)	)	PUNCT
bibechana-4828	61	37	si	si	NOUN
bibechana-4828	61	38	surface	surface	NOUN
bibechana-4828	61	39	is	be	AUX
bibechana-4828	61	40	attacked	attack	VERB
bibechana-4828	61	41	by	by	ADP
bibechana-4828	61	42	two	two	NUM
bibechana-4828	61	43	oh	oh	INTJ
bibechana-4828	61	44	per	per	ADP
bibechana-4828	61	45	si	si	NOUN
bibechana-4828	61	46	atoms	atom	NOUN
bibechana-4828	61	47	.	.	PUNCT
bibechana-4828	62	1	although	although	SCONJ
bibechana-4828	62	2	the	the	DET
bibechana-4828	62	3	mechanisms	mechanism	NOUN
bibechana-4828	62	4	are	be	AUX
bibechana-4828	62	5	not	not	PART
bibechana-4828	62	6	clear	clear	ADJ
bibechana-4828	62	7	,	,	PUNCT
bibechana-4828	62	8	it	it	PRON
bibechana-4828	62	9	is	be	AUX
bibechana-4828	62	10	known	know	VERB
bibechana-4828	62	11	that	that	SCONJ
bibechana-4828	62	12	electrochemical	electrochemical	ADJ
bibechana-4828	62	13	reactions	reaction	NOUN
bibechana-4828	62	14	play	play	VERB
bibechana-4828	62	15	an	an	DET
bibechana-4828	62	16	important	important	ADJ
bibechana-4828	62	17	role	role	NOUN
bibechana-4828	62	18	in	in	ADP
bibechana-4828	62	19	this	this	DET
bibechana-4828	62	20	process	process	NOUN
bibechana-4828	62	21	.	.	PUNCT
bibechana-4828	63	1	2	2	X
bibechana-4828	63	2	.	.	X
bibechana-4828	63	3	methodology	methodology	NOUN
bibechana-4828	63	4	the	the	DET
bibechana-4828	63	5	design	design	NOUN
bibechana-4828	63	6	of	of	ADP
bibechana-4828	63	7	the	the	DET
bibechana-4828	63	8	present	present	ADJ
bibechana-4828	63	9	work	work	NOUN
bibechana-4828	63	10	was	be	AUX
bibechana-4828	63	11	lab	lab	NOUN
bibechana-4828	63	12	based	base	VERB
bibechana-4828	63	13	experimental	experimental	ADJ
bibechana-4828	63	14	work	work	NOUN
bibechana-4828	63	15	.	.	PUNCT
bibechana-4828	64	1	the	the	DET
bibechana-4828	64	2	procedure	procedure	NOUN
bibechana-4828	64	3	followed	follow	VERB
bibechana-4828	64	4	during	during	ADP
bibechana-4828	64	5	this	this	DET
bibechana-4828	64	6	study	study	NOUN
bibechana-4828	64	7	was	be	AUX
bibechana-4828	64	8	mentioned	mention	VERB
bibechana-4828	64	9	herewith	herewith	ADP
bibechana-4828	64	10	sequentially	sequentially	ADV
bibechana-4828	64	11	.	.	PUNCT
bibechana-4828	65	1	the	the	DET
bibechana-4828	65	2	wafers	wafer	NOUN
bibechana-4828	65	3	used	use	VERB
bibechana-4828	65	4	in	in	ADP
bibechana-4828	65	5	this	this	DET
bibechana-4828	65	6	study	study	NOUN
bibechana-4828	65	7	were	be	AUX
bibechana-4828	65	8	thermally	thermally	ADV
bibechana-4828	65	9	bonded	bond	VERB
bibechana-4828	65	10	silicon	silicon	NOUN
bibechana-4828	65	11	on	on	ADP
bibechana-4828	65	12	insulator	insulator	NOUN
bibechana-4828	65	13	(	(	PUNCT
bibechana-4828	65	14	soi	soi	ADJ
bibechana-4828	65	15	)	)	PUNCT
bibechana-4828	65	16	wafers	wafer	NOUN
bibechana-4828	65	17	with	with	ADP
bibechana-4828	65	18	(	(	PUNCT
bibechana-4828	65	19	100	100	NUM
bibechana-4828	65	20	)	)	PUNCT
bibechana-4828	65	21	orientation	orientation	NOUN
bibechana-4828	65	22	.	.	PUNCT
bibechana-4828	66	1	the	the	DET
bibechana-4828	66	2	thickness	thickness	NOUN
bibechana-4828	66	3	of	of	ADP
bibechana-4828	66	4	the	the	DET
bibechana-4828	66	5	top	top	ADJ
bibechana-4828	66	6	silicon	silicon	NOUN
bibechana-4828	66	7	,	,	PUNCT
bibechana-4828	66	8	buried	bury	VERB
bibechana-4828	66	9	sio2	sio2	NOUN
bibechana-4828	66	10	layer	layer	NOUN
bibechana-4828	66	11	and	and	CCONJ
bibechana-4828	66	12	bottom	bottom	ADJ
bibechana-4828	66	13	silicon	silicon	NOUN
bibechana-4828	66	14	were	be	AUX
bibechana-4828	66	15	2	2	NUM
bibechana-4828	66	16	and	and	CCONJ
bibechana-4828	66	17	450	450	NUM
bibechana-4828	66	18	mm	mm	NOUN
bibechana-4828	66	19	respectively	respectively	ADV
bibechana-4828	66	20	.	.	PUNCT
bibechana-4828	67	1	the	the	DET
bibechana-4828	67	2	wafers	wafer	NOUN
bibechana-4828	67	3	were	be	AUX
bibechana-4828	67	4	of	of	ADP
bibechana-4828	67	5	p	p	NOUN
bibechana-4828	67	6	-	-	PUNCT
bibechana-4828	67	7	type	type	NOUN
bibechana-4828	67	8	silicon	silicon	NOUN
bibechana-4828	67	9	with	with	ADP
bibechana-4828	67	10	a	a	DET
bibechana-4828	67	11	resistivity	resistivity	NOUN
bibechana-4828	67	12	of	of	ADP
bibechana-4828	67	13	4	4	NUM
bibechana-4828	67	14	–	–	SYM
bibechana-4828	67	15	631022	631022	NUM
bibechana-4828	67	16	v	v	NOUN
bibechana-4828	67	17	-	-	PUNCT
bibechana-4828	67	18	cm	cm	NOUN
bibechana-4828	67	19	for	for	ADP
bibechana-4828	67	20	the	the	DET
bibechana-4828	67	21	top	top	ADJ
bibechana-4828	67	22	silicon	silicon	NOUN
bibechana-4828	67	23	and	and	CCONJ
bibechana-4828	67	24	12–15	12–15	NUM
bibechana-4828	67	25	v	v	NOUN
bibechana-4828	67	26	cm	cm	NOUN
bibechana-4828	67	27	for	for	ADP
bibechana-4828	67	28	the	the	DET
bibechana-4828	67	29	bottom	bottom	ADJ
bibechana-4828	67	30	silicon	silicon	NOUN
bibechana-4828	67	31	.	.	PUNCT
bibechana-4828	68	1	only	only	ADV
bibechana-4828	68	2	the	the	DET
bibechana-4828	68	3	top	top	ADJ
bibechana-4828	68	4	silicon	silicon	NOUN
bibechana-4828	68	5	layer	layer	NOUN
bibechana-4828	68	6	was	be	AUX
bibechana-4828	68	7	etched	etch	VERB
bibechana-4828	68	8	by	by	ADP
bibechana-4828	68	9	the	the	DET
bibechana-4828	68	10	koh	koh	PROPN
bibechana-4828	68	11	solution	solution	NOUN
bibechana-4828	68	12	.	.	PUNCT
bibechana-4828	69	1	first	first	ADV
bibechana-4828	69	2	,	,	PUNCT
bibechana-4828	69	3	the	the	DET
bibechana-4828	69	4	soi	soi	ADJ
bibechana-4828	69	5	wafers	wafer	NOUN
bibechana-4828	69	6	were	be	AUX
bibechana-4828	69	7	prepared	prepare	VERB
bibechana-4828	69	8	with	with	ADP
bibechana-4828	69	9	standard	standard	ADJ
bibechana-4828	69	10	rca	rca	ADJ
bibechana-4828	69	11	cleaning	cleaning	NOUN
bibechana-4828	69	12	.	.	PUNCT
bibechana-4828	70	1	a	a	DET
bibechana-4828	70	2	450	450	NUM
bibechana-4828	70	3	å	å	PROPN
bibechana-4828	70	4	layer	layer	NOUN
bibechana-4828	70	5	of	of	ADP
bibechana-4828	70	6	si3n4	si3n4	PROPN
bibechana-4828	70	7	,	,	PUNCT
bibechana-4828	70	8	which	which	PRON
bibechana-4828	70	9	acts	act	VERB
bibechana-4828	70	10	as	as	ADP
bibechana-4828	70	11	a	a	DET
bibechana-4828	70	12	koh	koh	NOUN
bibechana-4828	70	13	etching	etch	VERB
bibechana-4828	70	14	mask	mask	NOUN
bibechana-4828	70	15	,	,	PUNCT
bibechana-4828	70	16	was	be	AUX
bibechana-4828	70	17	deposited	deposit	VERB
bibechana-4828	70	18	on	on	ADP
bibechana-4828	70	19	each	each	DET
bibechana-4828	70	20	wafer	wafer	NOUN
bibechana-4828	70	21	using	use	VERB
bibechana-4828	70	22	low	low	ADJ
bibechana-4828	70	23	pressure	pressure	NOUN
bibechana-4828	70	24	chemical	chemical	NOUN
bibechana-4828	70	25	vapor	vapor	NOUN
bibechana-4828	70	26	deposition	deposition	NOUN
bibechana-4828	70	27	(	(	PUNCT
bibechana-4828	70	28	lpcvd	lpcvd	NOUN
bibechana-4828	70	29	)	)	PUNCT
bibechana-4828	70	30	.	.	PUNCT
bibechana-4828	71	1	oxide	oxide	NOUN
bibechana-4828	71	2	can	can	AUX
bibechana-4828	71	3	be	be	AUX
bibechana-4828	71	4	used	use	VERB
bibechana-4828	71	5	as	as	ADP
bibechana-4828	71	6	an	an	DET
bibechana-4828	71	7	etch	etch	NOUN
bibechana-4828	71	8	mask	mask	NOUN
bibechana-4828	71	9	for	for	ADP
bibechana-4828	71	10	short	short	ADJ
bibechana-4828	71	11	periods	period	NOUN
bibechana-4828	71	12	in	in	ADP
bibechana-4828	71	13	the	the	DET
bibechana-4828	71	14	koh	koh	PROPN
bibechana-4828	71	15	solution	solution	NOUN
bibechana-4828	71	16	,	,	PUNCT
bibechana-4828	71	17	but	but	CCONJ
bibechana-4828	71	18	for	for	ADP
bibechana-4828	71	19	long	long	ADJ
bibechana-4828	71	20	periods	period	NOUN
bibechana-4828	71	21	,	,	PUNCT
bibechana-4828	71	22	nitride	nitride	NOUN
bibechana-4828	71	23	is	be	AUX
bibechana-4828	71	24	a	a	DET
bibechana-4828	71	25	better	well	ADJ
bibechana-4828	71	26	etch	etch	NOUN
bibechana-4828	71	27	mask	mask	NOUN
bibechana-4828	71	28	as	as	SCONJ
bibechana-4828	71	29	it	it	PRON
bibechana-4828	71	30	etches	etch	VERB
bibechana-4828	71	31	more	more	ADV
bibechana-4828	71	32	slowly	slowly	ADV
bibechana-4828	71	33	.	.	PUNCT
bibechana-4828	72	1	the	the	DET
bibechana-4828	72	2	soi	soi	ADJ
bibechana-4828	72	3	wafer	wafer	NOUN
bibechana-4828	72	4	was	be	AUX
bibechana-4828	72	5	then	then	ADV
bibechana-4828	72	6	cut	cut	VERB
bibechana-4828	72	7	into	into	ADP
bibechana-4828	72	8	10	10	NUM
bibechana-4828	72	9	mm×10	mm×10	NOUN
bibechana-4828	72	10	mm	mm	NOUN
bibechana-4828	72	11	pieces	piece	NOUN
bibechana-4828	72	12	.	.	PUNCT
bibechana-4828	73	1	with	with	ADP
bibechana-4828	73	2	the	the	DET
bibechana-4828	73	3	diced	diced	ADJ
bibechana-4828	73	4	pieces	piece	NOUN
bibechana-4828	73	5	held	hold	VERB
bibechana-4828	73	6	on	on	ADP
bibechana-4828	73	7	a	a	DET
bibechana-4828	73	8	vacuum	vacuum	NOUN
bibechana-4828	73	9	chuck	chuck	NOUN
bibechana-4828	73	10	,	,	PUNCT
bibechana-4828	73	11	positive	positive	ADJ
bibechana-4828	73	12	photoresist	photoresist	NOUN
bibechana-4828	73	13	,	,	PUNCT
bibechana-4828	73	14	ocg	ocg	PROPN
bibechana-4828	73	15	825	825	NUM
bibechana-4828	74	1	[	[	X
bibechana-4828	74	2	sutter	sutter	NOUN
bibechana-4828	74	3	et	et	PROPN
bibechana-4828	74	4	al	al	PROPN
bibechana-4828	74	5	,	,	PUNCT
bibechana-4828	74	6	2003	2003	NUM
bibechana-4828	74	7	;	;	PUNCT
bibechana-4828	74	8	pp	pp	ADP
bibechana-4828	74	9	4	4	X
bibechana-4828	74	10	]	]	PUNCT
bibechana-4828	74	11	was	be	AUX
bibechana-4828	74	12	used	use	VERB
bibechana-4828	74	13	to	to	PART
bibechana-4828	74	14	pattern	pattern	VERB
bibechana-4828	74	15	the	the	DET
bibechana-4828	74	16	si3n4	si3n4	PROPN
bibechana-4828	74	17	for	for	ADP
bibechana-4828	74	18	the	the	DET
bibechana-4828	74	19	koh	koh	PROPN
bibechana-4828	74	20	etching	etch	VERB
bibechana-4828	74	21	mask	mask	NOUN
bibechana-4828	74	22	.	.	PUNCT
bibechana-4828	75	1	the	the	DET
bibechana-4828	75	2	nitride	nitride	NOUN
bibechana-4828	75	3	was	be	AUX
bibechana-4828	75	4	etched	etch	VERB
bibechana-4828	75	5	with	with	ADP
bibechana-4828	75	6	cf4	cf4	PROPN
bibechana-4828	75	7	plasma	plasma	PROPN
bibechana-4828	75	8	and	and	CCONJ
bibechana-4828	75	9	then	then	ADV
bibechana-4828	75	10	the	the	DET
bibechana-4828	75	11	exposed	expose	VERB
bibechana-4828	75	12	portion	portion	NOUN
bibechana-4828	75	13	of	of	ADP
bibechana-4828	75	14	the	the	DET
bibechana-4828	75	15	top	top	ADJ
bibechana-4828	75	16	silicon	silicon	NOUN
bibechana-4828	75	17	on	on	ADP
bibechana-4828	75	18	each	each	DET
bibechana-4828	75	19	soi	soi	ADJ
bibechana-4828	75	20	wafer	wafer	NOUN
bibechana-4828	75	21	was	be	AUX
bibechana-4828	75	22	etched	etch	VERB
bibechana-4828	75	23	in	in	ADP
bibechana-4828	75	24	koh	koh	PROPN
bibechana-4828	75	25	solutions	solution	NOUN
bibechana-4828	75	26	of	of	ADP
bibechana-4828	75	27	varying	vary	VERB
bibechana-4828	75	28	temperature	temperature	NOUN
bibechana-4828	75	29	and	and	CCONJ
bibechana-4828	75	30	concentration	concentration	NOUN
bibechana-4828	75	31	.	.	PUNCT
bibechana-4828	76	1	to	to	PART
bibechana-4828	76	2	assure	assure	VERB
bibechana-4828	76	3	the	the	DET
bibechana-4828	76	4	samples	sample	NOUN
bibechana-4828	76	5	were	be	AUX
bibechana-4828	76	6	free	free	ADJ
bibechana-4828	76	7	of	of	ADP
bibechana-4828	76	8	particulate	particulate	NOUN
bibechana-4828	76	9	and	and	CCONJ
bibechana-4828	76	10	other	other	ADJ
bibechana-4828	76	11	airborne	airborne	ADJ
bibechana-4828	76	12	contaminants	contaminant	NOUN
bibechana-4828	76	13	.	.	PUNCT
bibechana-4828	77	1	the	the	DET
bibechana-4828	77	2	experiments	experiment	NOUN
bibechana-4828	77	3	were	be	AUX
bibechana-4828	77	4	conducted	conduct	VERB
bibechana-4828	77	5	in	in	ADP
bibechana-4828	77	6	a	a	DET
bibechana-4828	77	7	clean	clean	ADJ
bibechana-4828	77	8	room	room	NOUN
bibechana-4828	77	9	environment	environment	NOUN
bibechana-4828	77	10	.	.	PUNCT
bibechana-4828	78	1	3	3	X
bibechana-4828	78	2	.	.	NOUN
bibechana-4828	78	3	results	result	NOUN
bibechana-4828	78	4	and	and	CCONJ
bibechana-4828	78	5	discussion	discussion	NOUN
bibechana-4828	78	6	koh	koh	PROPN
bibechana-4828	78	7	etch	etch	VERB
bibechana-4828	78	8	is	be	AUX
bibechana-4828	78	9	a	a	DET
bibechana-4828	78	10	bulk	bulk	ADJ
bibechana-4828	78	11	silicon	silicon	NOUN
bibechana-4828	78	12	etch	etch	VERB
bibechana-4828	78	13	whose	whose	DET
bibechana-4828	78	14	etch	etch	NOUN
bibechana-4828	78	15	rate	rate	NOUN
bibechana-4828	78	16	is	be	AUX
bibechana-4828	78	17	depends	depend	VERB
bibechana-4828	78	18	on	on	ADP
bibechana-4828	78	19	the	the	DET
bibechana-4828	78	20	orientation	orientation	NOUN
bibechana-4828	78	21	of	of	ADP
bibechana-4828	78	22	the	the	DET
bibechana-4828	78	23	crystal	crystal	NOUN
bibechana-4828	78	24	plane	plane	NOUN
bibechana-4828	78	25	can	can	AUX
bibechana-4828	78	26	be	be	AUX
bibechana-4828	78	27	exploited	exploit	VERB
bibechana-4828	78	28	to	to	PART
bibechana-4828	78	29	create	create	VERB
bibechana-4828	78	30	specific	specific	ADJ
bibechana-4828	78	31	geometries	geometry	NOUN
bibechana-4828	78	32	(	(	PUNCT
bibechana-4828	78	33	for	for	ADP
bibechana-4828	78	34	example	example	NOUN
bibechana-4828	78	35	,	,	PUNCT
bibechana-4828	78	36	v	v	X
bibechana-4828	78	37	-	-	ADJ
bibechana-4828	78	38	grooves	groove	NOUN
bibechana-4828	78	39	sown	sow	VERB
bibechana-4828	78	40	below	below	ADP
bibechana-4828	78	41	)	)	PUNCT
bibechana-4828	78	42	.	.	PUNCT
bibechana-4828	79	1	formation	formation	NOUN
bibechana-4828	79	2	of	of	ADP
bibechana-4828	79	3	such	such	ADJ
bibechana-4828	79	4	geometrical	geometrical	ADJ
bibechana-4828	79	5	structure	structure	NOUN
bibechana-4828	79	6	on	on	ADP
bibechana-4828	79	7	silicon	silicon	NOUN
bibechana-4828	79	8	crystal	crystal	NOUN
bibechana-4828	79	9	depends	depend	VERB
bibechana-4828	79	10	on	on	ADP
bibechana-4828	79	11	various	various	ADJ
bibechana-4828	79	12	factors	factor	NOUN
bibechana-4828	79	13	:	:	PUNCT
bibechana-4828	79	14	temperature	temperature	NOUN
bibechana-4828	79	15	,	,	PUNCT
bibechana-4828	79	16	concentration	concentration	NOUN
bibechana-4828	79	17	,	,	PUNCT
bibechana-4828	79	18	activation	activation	NOUN
bibechana-4828	79	19	energy	energy	NOUN
bibechana-4828	79	20	,	,	PUNCT
bibechana-4828	79	21	surface	surface	NOUN
bibechana-4828	79	22	finish	finish	NOUN
bibechana-4828	79	23	and	and	CCONJ
bibechana-4828	79	24	its	its	PRON
bibechana-4828	79	25	cleaning	cleaning	NOUN
bibechana-4828	79	26	process	process	NOUN
bibechana-4828	79	27	etc	etc	X
bibechana-4828	79	28	.	.	X
bibechana-4828	80	1	we	we	PRON
bibechana-4828	80	2	have	have	AUX
bibechana-4828	80	3	performed	perform	VERB
bibechana-4828	80	4	on	on	ADP
bibechana-4828	80	5	crystalline	crystalline	ADJ
bibechana-4828	80	6	silicon	silicon	NOUN
bibechana-4828	80	7	with	with	ADP
bibechana-4828	80	8	aqueous	aqueous	ADJ
bibechana-4828	80	9	koh	koh	PROPN
bibechana-4828	80	10	for	for	ADP
bibechana-4828	80	11	the	the	DET
bibechana-4828	80	12	temperature	temperature	NOUN
bibechana-4828	80	13	ranging	range	VERB
bibechana-4828	80	14	from	from	ADP
bibechana-4828	80	15	70	70	NUM
bibechana-4828	80	16	°	°	ADP
bibechana-4828	80	17	c	c	NOUN
bibechana-4828	80	18	to	to	ADP
bibechana-4828	80	19	90	90	NUM
bibechana-4828	80	20	°	°	NOUN
bibechana-4828	80	21	c	c	NOUN
bibechana-4828	80	22	and	and	CCONJ
bibechana-4828	80	23	its	its	PRON
bibechana-4828	80	24	concentration	concentration	NOUN
bibechana-4828	80	25	was	be	AUX
bibechana-4828	80	26	30	30	NUM
bibechana-4828	80	27	%	%	NOUN
bibechana-4828	80	28	.	.	PUNCT
bibechana-4828	81	1	our	our	PRON
bibechana-4828	81	2	results	result	NOUN
bibechana-4828	81	3	shows	show	VERB
bibechana-4828	81	4	that	that	SCONJ
bibechana-4828	81	5	the	the	DET
bibechana-4828	81	6	optimum	optimum	ADJ
bibechana-4828	81	7	etch	etch	NOUN
bibechana-4828	81	8	rate	rate	NOUN
bibechana-4828	81	9	with	with	ADP
bibechana-4828	81	10	the	the	DET
bibechana-4828	81	11	minimum	minimum	ADJ
bibechana-4828	81	12	surface	surface	NOUN
bibechana-4828	81	13	roughness	roughness	NOUN
bibechana-4828	81	14	,	,	PUNCT
bibechana-4828	81	15	indicates	indicate	VERB
bibechana-4828	81	16	low	low	ADJ
bibechana-4828	81	17	activation	activation	NOUN
bibechana-4828	81	18	energy	energy	NOUN
bibechana-4828	81	19	at	at	ADP
bibechana-4828	81	20	800c	800c	NUM
bibechana-4828	81	21	.	.	PUNCT
bibechana-4828	82	1	with	with	ADP
bibechana-4828	82	2	this	this	DET
bibechana-4828	82	3	one	one	NOUN
bibechana-4828	82	4	can	can	AUX
bibechana-4828	82	5	easily	easily	ADV
bibechana-4828	82	6	understand	understand	VERB
bibechana-4828	82	7	that	that	SCONJ
bibechana-4828	82	8	a	a	DET
bibechana-4828	82	9	single	single	ADJ
bibechana-4828	82	10	result	result	NOUN
bibechana-4828	82	11	is	be	AUX
bibechana-4828	82	12	the	the	DET
bibechana-4828	82	13	outcome	outcome	NOUN
bibechana-4828	82	14	of	of	ADP
bibechana-4828	82	15	various	various	ADJ
bibechana-4828	82	16	factors	factor	NOUN
bibechana-4828	82	17	including	include	VERB
bibechana-4828	82	18	koh	koh	PROPN
bibechana-4828	82	19	concentration	concentration	NOUN
bibechana-4828	82	20	.	.	PUNCT
bibechana-4828	83	1	the	the	DET
bibechana-4828	83	2	etch	etch	NOUN
bibechana-4828	83	3	rate	rate	NOUN
bibechana-4828	83	4	versus	versus	ADP
bibechana-4828	83	5	temperature	temperature	NOUN
bibechana-4828	83	6	as	as	ADV
bibechana-4828	83	7	well	well	ADV
bibechana-4828	83	8	as	as	ADP
bibechana-4828	83	9	etch	etch	VERB
bibechana-4828	83	10	rate	rate	NOUN
bibechana-4828	83	11	versus	versus	ADP
bibechana-4828	83	12	koh	koh	PROPN
bibechana-4828	83	13	concentration	concentration	NOUN
bibechana-4828	83	14	are	be	AUX
bibechana-4828	83	15	displayed	display	VERB
bibechana-4828	83	16	in	in	ADP
bibechana-4828	83	17	figure	figure	NOUN
bibechana-4828	83	18	2	2	NUM
bibechana-4828	83	19	.	.	PUNCT
bibechana-4828	83	20	figure	figure	NOUN
bibechana-4828	83	21	2	2	NUM
bibechana-4828	83	22	(	(	PUNCT
bibechana-4828	83	23	a	a	NOUN
bibechana-4828	83	24	)	)	PUNCT
bibechana-4828	83	25	and	and	CCONJ
bibechana-4828	83	26	(	(	PUNCT
bibechana-4828	83	27	b	b	X
bibechana-4828	83	28	)	)	PUNCT
bibechana-4828	83	29	shows	show	VERB
bibechana-4828	83	30	that	that	SCONJ
bibechana-4828	83	31	etch	etch	VERB
bibechana-4828	83	32	rate	rate	NOUN
bibechana-4828	83	33	increases	increase	NOUN
bibechana-4828	83	34	with	with	ADP
bibechana-4828	83	35	increasing	increase	VERB
bibechana-4828	83	36	reaction	reaction	NOUN
bibechana-4828	83	37	temperature	temperature	NOUN
bibechana-4828	83	38	,	,	PUNCT
bibechana-4828	83	39	regardless	regardless	ADV
bibechana-4828	83	40	about	about	ADP
bibechana-4828	83	41	koh	koh	PROPN
bibechana-4828	83	42	concentration	concentration	NOUN
bibechana-4828	83	43	.	.	PUNCT
bibechana-4828	84	1	within	within	ADP
bibechana-4828	84	2	the	the	DET
bibechana-4828	84	3	working	work	VERB
bibechana-4828	84	4	range	range	NOUN
bibechana-4828	84	5	investigated	investigate	VERB
bibechana-4828	84	6	,	,	PUNCT
bibechana-4828	84	7	the	the	DET
bibechana-4828	84	8	etch	etch	NOUN
bibechana-4828	84	9	rate	rate	NOUN
bibechana-4828	84	10	exhibits	exhibit	VERB
bibechana-4828	84	11	a	a	DET
bibechana-4828	84	12	maximum	maximum	NOUN
bibechana-4828	84	13	at	at	ADP
bibechana-4828	84	14	approximately	approximately	ADV
bibechana-4828	84	15	20	20	NUM
bibechana-4828	84	16	%	%	NOUN
bibechana-4828	84	17	koh	koh	PROPN
bibechana-4828	84	18	and	and	CCONJ
bibechana-4828	84	19	90	90	NUM
bibechana-4828	84	20	°	°	NOUN
bibechana-4828	84	21	c	c	NOUN
bibechana-4828	84	22	.	.	PUNCT
bibechana-4828	85	1	below	below	ADP
bibechana-4828	85	2	70	70	NUM
bibechana-4828	85	3	°	°	NOUN
bibechana-4828	85	4	c	c	NOUN
bibechana-4828	85	5	,	,	PUNCT
bibechana-4828	85	6	little	little	ADJ
bibechana-4828	85	7	dependence	dependence	NOUN
bibechana-4828	85	8	of	of	ADP
bibechana-4828	85	9	etch	etch	NOUN
bibechana-4828	85	10	rate	rate	NOUN
bibechana-4828	85	11	with	with	ADP
bibechana-4828	85	12	the	the	DET
bibechana-4828	85	13	koh	koh	PROPN
bibechana-4828	85	14	concentration	concentration	NOUN
bibechana-4828	85	15	is	be	AUX
bibechana-4828	85	16	observed	observe	VERB
bibechana-4828	85	17	.	.	PUNCT
bibechana-4828	86	1	without	without	ADP
bibechana-4828	86	2	considering	consider	VERB
bibechana-4828	86	3	the	the	DET
bibechana-4828	86	4	effect	effect	NOUN
bibechana-4828	86	5	of	of	ADP
bibechana-4828	86	6	etching	etch	VERB
bibechana-4828	86	7	,	,	PUNCT
bibechana-4828	86	8	we	we	PRON
bibechana-4828	86	9	conclude	conclude	VERB
bibechana-4828	86	10	that	that	SCONJ
bibechana-4828	86	11	the	the	DET
bibechana-4828	86	12	highest	high	ADJ
bibechana-4828	86	13	etch	etch	NOUN
bibechana-4828	86	14	rate	rate	NOUN
bibechana-4828	86	15	can	can	AUX
bibechana-4828	86	16	be	be	AUX
bibechana-4828	86	17	achieved	achieve	VERB
bibechana-4828	86	18	with	with	ADP
bibechana-4828	86	19	a	a	DET
bibechana-4828	86	20	high	high	ADJ
bibechana-4828	86	21	temperature	temperature	NOUN
bibechana-4828	86	22	reaction	reaction	NOUN
bibechana-4828	86	23	.	.	PUNCT
bibechana-4828	87	1	figure	figure	NOUN
bibechana-4828	87	2	2	2	NUM
bibechana-4828	87	3	(	(	PUNCT
bibechana-4828	87	4	d	d	NOUN
bibechana-4828	87	5	)	)	PUNCT
bibechana-4828	87	6	demonstrate	demonstrate	VERB
bibechana-4828	87	7	the	the	DET
bibechana-4828	87	8	effect	effect	NOUN
bibechana-4828	87	9	of	of	ADP
bibechana-4828	87	10	changing	change	VERB
bibechana-4828	87	11	koh	koh	PROPN
bibechana-4828	87	12	concentration	concentration	NOUN
bibechana-4828	87	13	with	with	ADP
bibechana-4828	87	14	the	the	DET
bibechana-4828	87	15	etch	etch	NOUN
bibechana-4828	87	16	rate	rate	NOUN
bibechana-4828	87	17	.	.	PUNCT
bibechana-4828	88	1	as	as	SCONJ
bibechana-4828	88	2	we	we	PRON
bibechana-4828	88	3	conclude	conclude	VERB
bibechana-4828	88	4	from	from	ADP
bibechana-4828	88	5	figure	figure	NOUN
bibechana-4828	88	6	.	.	PUNCT
bibechana-4828	89	1	2	2	NUM
bibechana-4828	89	2	that	that	PRON
bibechana-4828	89	3	er	er	INTJ
bibechana-4828	89	4	depends	depend	VERB
bibechana-4828	89	5	on	on	ADP
bibechana-4828	89	6	concentration	concentration	NOUN
bibechana-4828	89	7	are	be	AUX
bibechana-4828	89	8	less	less	ADV
bibechana-4828	89	9	significant	significant	ADJ
bibechana-4828	89	10	than	than	ADP
bibechana-4828	89	11	reaction	reaction	NOUN
bibechana-4828	89	12	temperature	temperature	NOUN
bibechana-4828	89	13	.	.	PUNCT
bibechana-4828	90	1	dimensional	dimensional	ADJ
bibechana-4828	90	2	control	control	NOUN
bibechana-4828	90	3	of	of	ADP
bibechana-4828	90	4	a	a	DET
bibechana-4828	90	5	microstructure	microstructure	NOUN
bibechana-4828	90	6	is	be	AUX
bibechana-4828	90	7	strongly	strongly	ADV
bibechana-4828	90	8	related	relate	VERB
bibechana-4828	90	9	to	to	ADP
bibechana-4828	90	10	mems	mem	NOUN
bibechana-4828	90	11	performance	performance	NOUN
bibechana-4828	90	12	.	.	PUNCT
bibechana-4828	91	1	etching	etch	VERB
bibechana-4828	91	2	technique	technique	NOUN
bibechana-4828	91	3	allows	allow	VERB
bibechana-4828	91	4	control	control	NOUN
bibechana-4828	91	5	of	of	ADP
bibechana-4828	91	6	the	the	DET
bibechana-4828	91	7	dimension	dimension	NOUN
bibechana-4828	91	8	.	.	PUNCT
bibechana-4828	92	1	working	work	VERB
bibechana-4828	92	2	in	in	ADP
bibechana-4828	92	3	micromachining	micromachine	VERB
bibechana-4828	92	4	we	we	PRON
bibechana-4828	92	5	need	need	VERB
bibechana-4828	92	6	to	to	PART
bibechana-4828	92	7	both	both	CCONJ
bibechana-4828	92	8	add	add	VERB
bibechana-4828	92	9	and	and	CCONJ
bibechana-4828	92	10	shobha	shobha	NOUN
bibechana-4828	92	11	kanta	kanta	PROPN
bibechana-4828	92	12	lamichhane	lamichhane	PROPN
bibechana-4828	92	13	/	/	SYM
bibechana-4828	92	14	bibechana	bibechana	PROPN
bibechana-4828	92	15	8	8	NUM
bibechana-4828	92	16	(	(	PUNCT
bibechana-4828	92	17	2012	2012	NUM
bibechana-4828	92	18	)	)	PUNCT
bibechana-4828	92	19	59	59	NUM
bibechana-4828	92	20	-	-	SYM
bibechana-4828	92	21	65	65	NUM
bibechana-4828	92	22	:	:	PUNCT
bibechana-4828	92	23	bmhss	bmhss	PROPN
bibechana-4828	92	24	,	,	PUNCT
bibechana-4828	92	25	p.62	p.62	X
bibechana-4828	92	26	remove	remove	VERB
bibechana-4828	92	27	the	the	DET
bibechana-4828	92	28	material	material	NOUN
bibechana-4828	92	29	in	in	ADP
bibechana-4828	92	30	a	a	DET
bibechana-4828	92	31	controlled	control	VERB
bibechana-4828	92	32	way	way	NOUN
bibechana-4828	92	33	.	.	PUNCT
bibechana-4828	93	1	adding	add	VERB
bibechana-4828	93	2	material	material	NOUN
bibechana-4828	93	3	on	on	ADP
bibechana-4828	93	4	a	a	DET
bibechana-4828	93	5	silicon	silicon	NOUN
bibechana-4828	93	6	wafer	wafer	NOUN
bibechana-4828	93	7	can	can	AUX
bibechana-4828	93	8	be	be	AUX
bibechana-4828	93	9	done	do	VERB
bibechana-4828	93	10	by	by	ADP
bibechana-4828	93	11	chemical	chemical	ADJ
bibechana-4828	93	12	vapor	vapor	NOUN
bibechana-4828	93	13	deposition	deposition	NOUN
bibechana-4828	93	14	(	(	PUNCT
bibechana-4828	93	15	cvd	cvd	PROPN
bibechana-4828	93	16	)	)	PUNCT
bibechana-4828	93	17	.	.	PUNCT
bibechana-4828	94	1	removing	remove	VERB
bibechana-4828	94	2	material	material	NOUN
bibechana-4828	94	3	is	be	AUX
bibechana-4828	94	4	done	do	VERB
bibechana-4828	94	5	almost	almost	ADV
bibechana-4828	94	6	by	by	ADP
bibechana-4828	94	7	chemical	chemical	ADJ
bibechana-4828	94	8	etching	etching	NOUN
bibechana-4828	94	9	,	,	PUNCT
bibechana-4828	94	10	where	where	SCONJ
bibechana-4828	94	11	a	a	DET
bibechana-4828	94	12	material	material	NOUN
bibechana-4828	94	13	is	be	AUX
bibechana-4828	94	14	removed	remove	VERB
bibechana-4828	94	15	atom	atom	NOUN
bibechana-4828	94	16	by	by	ADP
bibechana-4828	94	17	atom	atom	NOUN
bibechana-4828	94	18	[	[	X
bibechana-4828	94	19	13	13	NUM
bibechana-4828	94	20	]	]	PUNCT
bibechana-4828	94	21	.	.	PUNCT
bibechana-4828	95	1	this	this	PRON
bibechana-4828	95	2	can	can	AUX
bibechana-4828	95	3	be	be	AUX
bibechana-4828	95	4	done	do	VERB
bibechana-4828	95	5	either	either	CCONJ
bibechana-4828	95	6	in	in	ADP
bibechana-4828	95	7	a	a	DET
bibechana-4828	95	8	liquid	liquid	NOUN
bibechana-4828	95	9	(	(	PUNCT
bibechana-4828	95	10	wet	wet	ADJ
bibechana-4828	95	11	etching	etching	NOUN
bibechana-4828	95	12	)	)	PUNCT
bibechana-4828	95	13	or	or	CCONJ
bibechana-4828	95	14	in	in	ADP
bibechana-4828	95	15	plasma	plasma	NOUN
bibechana-4828	95	16	(	(	PUNCT
bibechana-4828	95	17	dry	dry	ADJ
bibechana-4828	95	18	etching	etching	NOUN
bibechana-4828	95	19	)	)	PUNCT
bibechana-4828	95	20	.	.	PUNCT
bibechana-4828	96	1	still	still	ADV
bibechana-4828	96	2	the	the	DET
bibechana-4828	96	3	most	most	ADV
bibechana-4828	96	4	simple	simple	ADJ
bibechana-4828	96	5	and	and	CCONJ
bibechana-4828	96	6	versatile	versatile	ADJ
bibechana-4828	96	7	anisotropic	anisotropic	NOUN
bibechana-4828	96	8	wet	wet	ADJ
bibechana-4828	96	9	chemical	chemical	NOUN
bibechana-4828	96	10	etching	etch	VERB
bibechana-4828	96	11	for	for	ADP
bibechana-4828	96	12	silicon	silicon	NOUN
bibechana-4828	96	13	is	be	AUX
bibechana-4828	96	14	in	in	ADP
bibechana-4828	96	15	koh	koh	PROPN
bibechana-4828	96	16	.	.	PUNCT
bibechana-4828	97	1	generally	generally	ADV
bibechana-4828	97	2	,	,	PUNCT
bibechana-4828	97	3	etch	etch	NOUN
bibechana-4828	97	4	anisotropy	anisotropy	NOUN
bibechana-4828	97	5	is	be	AUX
bibechana-4828	97	6	given	give	VERB
bibechana-4828	97	7	by	by	ADP
bibechana-4828	97	8	,	,	PUNCT
bibechana-4828	97	9	ea=	ea=	PROPN
bibechana-4828	97	10	1(erl	1(erl	PROPN
bibechana-4828	97	11	/	/	SYM
bibechana-4828	97	12	erv	erv	PROPN
bibechana-4828	97	13	)	)	PUNCT
bibechana-4828	97	14	,	,	PUNCT
bibechana-4828	97	15	where	where	SCONJ
bibechana-4828	97	16	erl	erl	PROPN
bibechana-4828	97	17	and	and	CCONJ
bibechana-4828	97	18	erv	erv	X
bibechana-4828	97	19	are	be	AUX
bibechana-4828	97	20	the	the	DET
bibechana-4828	97	21	lateral	lateral	ADJ
bibechana-4828	97	22	and	and	CCONJ
bibechana-4828	97	23	vertical	vertical	ADJ
bibechana-4828	97	24	etch	etch	NOUN
bibechana-4828	97	25	rates	rate	NOUN
bibechana-4828	97	26	.	.	PUNCT
bibechana-4828	98	1	a	a	DET
bibechana-4828	98	2	process	process	NOUN
bibechana-4828	98	3	is	be	AUX
bibechana-4828	98	4	said	say	VERB
bibechana-4828	98	5	to	to	PART
bibechana-4828	98	6	be	be	AUX
bibechana-4828	98	7	purely	purely	ADV
bibechana-4828	98	8	anisotropic	anisotropic	NOUN
bibechana-4828	98	9	(	(	PUNCT
bibechana-4828	98	10	ea=1	ea=1	NOUN
bibechana-4828	98	11	)	)	PUNCT
bibechana-4828	98	12	if	if	SCONJ
bibechana-4828	98	13	lateral	lateral	ADJ
bibechana-4828	98	14	etch	etch	NOUN
bibechana-4828	98	15	rate	rate	NOUN
bibechana-4828	98	16	is	be	AUX
bibechana-4828	98	17	zero	zero	NUM
bibechana-4828	98	18	.	.	PUNCT
bibechana-4828	99	1	on	on	ADP
bibechana-4828	99	2	the	the	DET
bibechana-4828	99	3	other	other	ADJ
bibechana-4828	99	4	hand	hand	NOUN
bibechana-4828	99	5	,	,	PUNCT
bibechana-4828	99	6	if	if	SCONJ
bibechana-4828	99	7	ea=0	ea=0	NOUN
bibechana-4828	99	8	,	,	PUNCT
bibechana-4828	99	9	lateral	lateral	ADJ
bibechana-4828	99	10	and	and	CCONJ
bibechana-4828	99	11	vertical	vertical	ADJ
bibechana-4828	99	12	etch	etch	NOUN
bibechana-4828	99	13	rates	rate	NOUN
bibechana-4828	99	14	are	be	AUX
bibechana-4828	99	15	identical	identical	ADJ
bibechana-4828	99	16	and	and	CCONJ
bibechana-4828	99	17	etching	etch	VERB
bibechana-4828	99	18	is	be	AUX
bibechana-4828	99	19	said	say	VERB
bibechana-4828	99	20	to	to	PART
bibechana-4828	99	21	be	be	AUX
bibechana-4828	99	22	isotropic	isotropic	ADJ
bibechana-4828	99	23	.	.	PUNCT
bibechana-4828	100	1	the	the	DET
bibechana-4828	100	2	geometry	geometry	NOUN
bibechana-4828	100	3	what	what	PRON
bibechana-4828	100	4	we	we	PRON
bibechana-4828	100	5	got	get	VERB
bibechana-4828	100	6	is	be	AUX
bibechana-4828	100	7	shown	show	VERB
bibechana-4828	100	8	in	in	ADP
bibechana-4828	100	9	fig.1	fig.1	PROPN
bibechana-4828	100	10	below	below	ADV
bibechana-4828	100	11	.	.	PUNCT
bibechana-4828	101	1	fig.1	fig.1	ADJ
bibechana-4828	101	2	:	:	PUNCT
bibechana-4828	101	3	schematic	schematic	ADJ
bibechana-4828	101	4	showing	show	VERB
bibechana-4828	101	5	anisotropic	anisotropic	NOUN
bibechana-4828	101	6	etches	etche	NOUN
bibechana-4828	101	7	of	of	ADP
bibechana-4828	101	8	silicon	silicon	NOUN
bibechana-4828	101	9	the	the	DET
bibechana-4828	101	10	final	final	ADJ
bibechana-4828	101	11	shape	shape	NOUN
bibechana-4828	101	12	of	of	ADP
bibechana-4828	101	13	the	the	DET
bibechana-4828	101	14	etched	etch	VERB
bibechana-4828	101	15	wafer	wafer	NOUN
bibechana-4828	101	16	depends	depend	VERB
bibechana-4828	101	17	highly	highly	ADV
bibechana-4828	101	18	on	on	ADP
bibechana-4828	101	19	relative	relative	ADJ
bibechana-4828	101	20	etching	etch	VERB
bibechana-4828	101	21	speed	speed	NOUN
bibechana-4828	101	22	along	along	ADP
bibechana-4828	101	23	crystallographic	crystallographic	ADJ
bibechana-4828	101	24	planes	plane	NOUN
bibechana-4828	101	25	.	.	PUNCT
bibechana-4828	102	1	the	the	DET
bibechana-4828	102	2	(	(	PUNCT
bibechana-4828	102	3	111	111	NUM
bibechana-4828	102	4	)	)	PUNCT
bibechana-4828	102	5	plane	plane	NOUN
bibechana-4828	102	6	is	be	AUX
bibechana-4828	102	7	comparatively	comparatively	ADV
bibechana-4828	102	8	inert	inert	ADJ
bibechana-4828	102	9	to	to	ADP
bibechana-4828	102	10	alkaline	alkaline	NOUN
bibechana-4828	102	11	etchants	etchant	NOUN
bibechana-4828	102	12	,	,	PUNCT
bibechana-4828	102	13	while	while	SCONJ
bibechana-4828	102	14	the	the	DET
bibechana-4828	102	15	relative	relative	ADJ
bibechana-4828	102	16	etching	etch	VERB
bibechana-4828	102	17	speed	speed	NOUN
bibechana-4828	102	18	of	of	ADP
bibechana-4828	102	19	other	other	ADJ
bibechana-4828	102	20	planes	plane	NOUN
bibechana-4828	102	21	depends	depend	VERB
bibechana-4828	102	22	on	on	ADP
bibechana-4828	102	23	nature	nature	NOUN
bibechana-4828	102	24	of	of	ADP
bibechana-4828	102	25	etchant	etchant	NOUN
bibechana-4828	102	26	,	,	PUNCT
bibechana-4828	102	27	temperature	temperature	NOUN
bibechana-4828	102	28	,	,	PUNCT
bibechana-4828	102	29	concentration	concentration	NOUN
bibechana-4828	102	30	etc	etc	X
bibechana-4828	102	31	.	.	X
bibechana-4828	102	32	in	in	ADP
bibechana-4828	102	33	our	our	PRON
bibechana-4828	102	34	experiment	experiment	NOUN
bibechana-4828	102	35	,	,	PUNCT
bibechana-4828	102	36	we	we	PRON
bibechana-4828	102	37	have	have	AUX
bibechana-4828	102	38	taken	take	VERB
bibechana-4828	102	39	33	33	NUM
bibechana-4828	102	40	%	%	NOUN
bibechana-4828	102	41	koh	koh	PROPN
bibechana-4828	102	42	by	by	ADP
bibechana-4828	102	43	weight	weight	NOUN
bibechana-4828	102	44	as	as	ADP
bibechana-4828	102	45	an	an	DET
bibechana-4828	102	46	etchant	etchant	NOUN
bibechana-4828	102	47	for	for	ADP
bibechana-4828	102	48	silicon	silicon	NOUN
bibechana-4828	102	49	(	(	PUNCT
bibechana-4828	102	50	111	111	NUM
bibechana-4828	102	51	)	)	PUNCT
bibechana-4828	102	52	and	and	CCONJ
bibechana-4828	102	53	(	(	PUNCT
bibechana-4828	102	54	100	100	NUM
bibechana-4828	102	55	)	)	PUNCT
bibechana-4828	102	56	planes	plane	NOUN
bibechana-4828	102	57	ambient	ambient	ADJ
bibechana-4828	102	58	conditions	condition	NOUN
bibechana-4828	102	59	,	,	PUNCT
bibechana-4828	102	60	unless	unless	SCONJ
bibechana-4828	102	61	otherwise	otherwise	ADV
bibechana-4828	102	62	specified	specify	VERB
bibechana-4828	102	63	.	.	PUNCT
bibechana-4828	103	1	3.1	3.1	NUM
bibechana-4828	103	2	surface	surface	NOUN
bibechana-4828	103	3	finish	finish	NOUN
bibechana-4828	103	4	of	of	ADP
bibechana-4828	103	5	etched	etch	VERB
bibechana-4828	103	6	silicon	silicon	NOUN
bibechana-4828	103	7	contaminants	contaminant	NOUN
bibechana-4828	103	8	are	be	AUX
bibechana-4828	103	9	attached	attach	VERB
bibechana-4828	103	10	to	to	ADP
bibechana-4828	103	11	the	the	DET
bibechana-4828	103	12	wafer	wafer	NOUN
bibechana-4828	103	13	surface	surface	NOUN
bibechana-4828	103	14	physically	physically	ADV
bibechana-4828	103	15	or	or	CCONJ
bibechana-4828	103	16	chemically	chemically	ADV
bibechana-4828	103	17	.	.	PUNCT
bibechana-4828	104	1	chemical	chemical	ADJ
bibechana-4828	104	2	cleaning	cleaning	NOUN
bibechana-4828	104	3	is	be	AUX
bibechana-4828	104	4	necessary	necessary	ADJ
bibechana-4828	104	5	in	in	ADP
bibechana-4828	104	6	many	many	ADJ
bibechana-4828	104	7	steps	step	NOUN
bibechana-4828	104	8	during	during	ADP
bibechana-4828	104	9	fabrication	fabrication	NOUN
bibechana-4828	104	10	.	.	PUNCT
bibechana-4828	105	1	the	the	DET
bibechana-4828	105	2	process	process	NOUN
bibechana-4828	105	3	that	that	PRON
bibechana-4828	105	4	is	be	AUX
bibechana-4828	105	5	widely	widely	ADV
bibechana-4828	105	6	used	use	VERB
bibechana-4828	105	7	is	be	AUX
bibechana-4828	105	8	so	so	ADV
bibechana-4828	105	9	called	call	VERB
bibechana-4828	105	10	“	"	PUNCT
bibechana-4828	105	11	rca	rca	ADJ
bibechana-4828	105	12	cleaning	cleaning	NOUN
bibechana-4828	105	13	”	"	PUNCT
bibechana-4828	105	14	consist	consist	NOUN
bibechana-4828	105	15	of	of	ADP
bibechana-4828	105	16	two	two	NUM
bibechana-4828	105	17	consecutive	consecutive	ADJ
bibechana-4828	105	18	cleaning	cleaning	NOUN
bibechana-4828	105	19	solutions	solution	NOUN
bibechana-4828	105	20	including	include	VERB
bibechana-4828	105	21	h2o	h2o	NOUN
bibechana-4828	105	22	-	-	PUNCT
bibechana-4828	105	23	h2o2	h2o2	NOUN
bibechana-4828	105	24	-	-	PUNCT
bibechana-4828	105	25	nh4oh	nh4oh	NUM
bibechana-4828	105	26	(	(	PUNCT
bibechana-4828	105	27	standard	standard	ADJ
bibechana-4828	105	28	clean1	clean1	PROPN
bibechana-4828	105	29	,	,	PUNCT
bibechana-4828	105	30	i.e.	i.e.	X
bibechana-4828	105	31	sc1	sc1	PROPN
bibechana-4828	105	32	clean	clean	ADJ
bibechana-4828	105	33	)	)	PUNCT
bibechana-4828	105	34	and	and	CCONJ
bibechana-4828	105	35	h2o	h2o	PROPN
bibechana-4828	105	36	-	-	PUNCT
bibechana-4828	105	37	h2o2	h2o2	NOUN
bibechana-4828	105	38	-	-	ADJ
bibechana-4828	105	39	hcl	hcl	NOUN
bibechana-4828	105	40	(	(	PUNCT
bibechana-4828	105	41	standard	standard	ADJ
bibechana-4828	105	42	clean	clean	ADJ
bibechana-4828	105	43	2	2	NUM
bibechana-4828	105	44	,	,	PUNCT
bibechana-4828	105	45	i.e.	i.e.	X
bibechana-4828	105	46	sc2	sc2	NOUN
bibechana-4828	105	47	)	)	PUNCT
bibechana-4828	105	48	.	.	PUNCT
bibechana-4828	106	1	the	the	DET
bibechana-4828	106	2	sc1	sc1	NOUN
bibechana-4828	106	3	cleaning	clean	VERB
bibechana-4828	106	4	with	with	ADP
bibechana-4828	106	5	volume	volume	NOUN
bibechana-4828	106	6	ratios	ratio	NOUN
bibechana-4828	106	7	typically	typically	ADV
bibechana-4828	106	8	5:1:1	5:1:1	PROPN
bibechana-4828	106	9	is	be	AUX
bibechana-4828	106	10	to	to	PART
bibechana-4828	106	11	remove	remove	VERB
bibechana-4828	106	12	organic	organic	ADJ
bibechana-4828	106	13	contaminants	contaminant	NOUN
bibechana-4828	106	14	.	.	PUNCT
bibechana-4828	107	1	the	the	DET
bibechana-4828	107	2	sc1	sc1	PROPN
bibechana-4828	107	3	can	can	AUX
bibechana-4828	107	4	remove	remove	VERB
bibechana-4828	107	5	particles	particle	NOUN
bibechana-4828	107	6	physically	physically	ADV
bibechana-4828	107	7	attached	attach	VERB
bibechana-4828	107	8	to	to	ADP
bibechana-4828	107	9	a	a	DET
bibechana-4828	107	10	wafer	wafer	NOUN
bibechana-4828	107	11	surface	surface	NOUN
bibechana-4828	107	12	by	by	ADP
bibechana-4828	107	13	etching	etch	VERB
bibechana-4828	107	14	with	with	ADP
bibechana-4828	107	15	nh4oh	nh4oh	NUM
bibechana-4828	107	16	that	that	PRON
bibechana-4828	107	17	detaches	detach	VERB
bibechana-4828	107	18	the	the	DET
bibechana-4828	107	19	particles	particle	NOUN
bibechana-4828	107	20	from	from	ADP
bibechana-4828	107	21	the	the	DET
bibechana-4828	107	22	wafer	wafer	NOUN
bibechana-4828	107	23	surface	surface	NOUN
bibechana-4828	107	24	and	and	CCONJ
bibechana-4828	107	25	prevents	prevent	VERB
bibechana-4828	107	26	re	re	NOUN
bibechana-4828	107	27	-	-	NOUN
bibechana-4828	107	28	deposition	deposition	NOUN
bibechana-4828	107	29	.	.	PUNCT
bibechana-4828	108	1	the	the	DET
bibechana-4828	108	2	sc2	sc2	PROPN
bibechana-4828	108	3	clean	clean	ADJ
bibechana-4828	108	4	,	,	PUNCT
bibechana-4828	108	5	with	with	ADP
bibechana-4828	108	6	typical	typical	ADJ
bibechana-4828	108	7	volume	volume	NOUN
bibechana-4828	108	8	ratios	ratio	NOUN
bibechana-4828	108	9	of	of	ADP
bibechana-4828	108	10	6:1:1	6:1:1	NUM
bibechana-4828	108	11	removes	remove	VERB
bibechana-4828	108	12	metals	metal	NOUN
bibechana-4828	108	13	from	from	ADP
bibechana-4828	108	14	wafer	wafer	NOUN
bibechana-4828	108	15	surface	surface	NOUN
bibechana-4828	108	16	and	and	CCONJ
bibechana-4828	108	17	prevents	prevent	VERB
bibechana-4828	108	18	re	re	NOUN
bibechana-4828	108	19	-	-	NOUN
bibechana-4828	108	20	deposition	deposition	NOUN
bibechana-4828	109	1	[	[	X
bibechana-4828	109	2	13	13	NUM
bibechana-4828	109	3	]	]	PUNCT
bibechana-4828	109	4	.	.	PUNCT
bibechana-4828	110	1	a	a	DET
bibechana-4828	110	2	modified	modify	VERB
bibechana-4828	110	3	rca	rca	NOUN
bibechana-4828	110	4	clean	clean	ADJ
bibechana-4828	110	5	(	(	PUNCT
bibechana-4828	110	6	i.e.	i.e.	X
bibechana-4828	110	7	,	,	PUNCT
bibechana-4828	110	8	dilute	dilute	VERB
bibechana-4828	110	9	hf	hf	NOUN
bibechana-4828	110	10	after	after	ADP
bibechana-4828	110	11	sc1	sc1	PROPN
bibechana-4828	110	12	)	)	PUNCT
bibechana-4828	110	13	is	be	AUX
bibechana-4828	110	14	designed	design	VERB
bibechana-4828	110	15	to	to	PART
bibechana-4828	110	16	eliminate	eliminate	VERB
bibechana-4828	110	17	the	the	DET
bibechana-4828	110	18	thin	thin	ADJ
bibechana-4828	110	19	oxide	oxide	NOUN
bibechana-4828	110	20	layer	layer	NOUN
bibechana-4828	110	21	grown	grow	VERB
bibechana-4828	110	22	on	on	ADP
bibechana-4828	110	23	silicon	silicon	NOUN
bibechana-4828	110	24	surface	surface	NOUN
bibechana-4828	110	25	.	.	PUNCT
bibechana-4828	111	1	modification	modification	NOUN
bibechana-4828	111	2	of	of	ADP
bibechana-4828	111	3	rca	rca	PROPN
bibechana-4828	111	4	clean	clean	PROPN
bibechana-4828	111	5	exists	exist	VERB
bibechana-4828	111	6	on	on	ADP
bibechana-4828	111	7	the	the	DET
bibechana-4828	111	8	volume	volume	NOUN
bibechana-4828	111	9	ratios	ratio	NOUN
bibechana-4828	111	10	.	.	PUNCT
bibechana-4828	112	1	as	as	ADP
bibechana-4828	112	2	for	for	ADP
bibechana-4828	112	3	example	example	NOUN
bibechana-4828	112	4	,	,	PUNCT
bibechana-4828	112	5	in	in	ADP
bibechana-4828	112	6	order	order	NOUN
bibechana-4828	112	7	to	to	PART
bibechana-4828	112	8	reduce	reduce	VERB
bibechana-4828	112	9	silicon	silicon	NOUN
bibechana-4828	112	10	surface	surface	NOUN
bibechana-4828	112	11	roughness	roughness	NOUN
bibechana-4828	112	12	one	one	NUM
bibechana-4828	112	13	needs	need	VERB
bibechana-4828	112	14	to	to	PART
bibechana-4828	112	15	greatly	greatly	ADV
bibechana-4828	112	16	reduce	reduce	VERB
bibechana-4828	112	17	the	the	DET
bibechana-4828	112	18	volume	volume	NOUN
bibechana-4828	112	19	fraction	fraction	NOUN
bibechana-4828	112	20	of	of	ADP
bibechana-4828	112	21	nh4oh	nh4oh	NUM
bibechana-4828	112	22	in	in	ADP
bibechana-4828	112	23	sc1	sc1	PROPN
bibechana-4828	112	24	from	from	ADP
bibechana-4828	112	25	the	the	DET
bibechana-4828	112	26	original	original	ADJ
bibechana-4828	112	27	composition	composition	NOUN
bibechana-4828	112	28	.	.	PUNCT
bibechana-4828	113	1	surface	surface	NOUN
bibechana-4828	113	2	taken	take	VERB
bibechana-4828	113	3	by	by	ADP
bibechana-4828	113	4	afm	afm	PROPN
bibechana-4828	113	5	is	be	AUX
bibechana-4828	113	6	depicted	depict	VERB
bibechana-4828	113	7	in	in	ADP
bibechana-4828	113	8	fig	fig	NOUN
bibechana-4828	113	9	.	.	PUNCT
bibechana-4828	114	1	3	3	NUM
bibechana-4828	114	2	below	below	ADV
bibechana-4828	114	3	.	.	PUNCT
bibechana-4828	115	1	other	other	ADJ
bibechana-4828	115	2	cleaning	cleaning	NOUN
bibechana-4828	115	3	processes	process	NOUN
bibechana-4828	115	4	,	,	PUNCT
bibechana-4828	115	5	such	such	ADJ
bibechana-4828	115	6	as	as	ADP
bibechana-4828	115	7	piranha	piranha	NOUN
bibechana-4828	115	8	(	(	PUNCT
bibechana-4828	115	9	h2so4	h2so4	PROPN
bibechana-4828	115	10	-h2o2	-h2o2	PROPN
bibechana-4828	115	11	-	-	PUNCT
bibechana-4828	115	12	h2o	h2o	PROPN
bibechana-4828	115	13	)	)	PUNCT
bibechana-4828	115	14	,	,	PUNCT
bibechana-4828	115	15	ozonized	ozonize	VERB
bibechana-4828	115	16	water	water	NOUN
bibechana-4828	115	17	etc	etc	X
bibechana-4828	115	18	.	.	X
bibechana-4828	115	19	are	be	AUX
bibechana-4828	115	20	also	also	ADV
bibechana-4828	115	21	effective	effective	ADJ
bibechana-4828	115	22	.	.	PUNCT
bibechana-4828	116	1	however	however	ADV
bibechana-4828	116	2	,	,	PUNCT
bibechana-4828	116	3	rca	rca	PROPN
bibechana-4828	116	4	clean	clean	PROPN
bibechana-4828	116	5	have	have	AUX
bibechana-4828	116	6	been	be	AUX
bibechana-4828	116	7	most	most	ADV
bibechana-4828	116	8	popular	popular	ADJ
bibechana-4828	116	9	cleaning	cleaning	NOUN
bibechana-4828	116	10	process	process	NOUN
bibechana-4828	116	11	,	,	PUNCT
bibechana-4828	116	12	is	be	AUX
bibechana-4828	116	13	adopted	adopt	VERB
bibechana-4828	116	14	in	in	ADP
bibechana-4828	116	15	this	this	DET
bibechana-4828	116	16	work	work	NOUN
bibechana-4828	116	17	.	.	PUNCT
bibechana-4828	117	1	shobha	shobha	PROPN
bibechana-4828	117	2	kanta	kanta	PROPN
bibechana-4828	117	3	lamichhane	lamichhane	PROPN
bibechana-4828	117	4	/	/	SYM
bibechana-4828	117	5	bibechana	bibechana	PROPN
bibechana-4828	117	6	8	8	NUM
bibechana-4828	117	7	(	(	PUNCT
bibechana-4828	117	8	2012	2012	NUM
bibechana-4828	117	9	)	)	PUNCT
bibechana-4828	117	10	59	59	NUM
bibechana-4828	117	11	-	-	SYM
bibechana-4828	117	12	65	65	NUM
bibechana-4828	117	13	:	:	PUNCT
bibechana-4828	117	14	bmhss	bmhss	PROPN
bibechana-4828	117	15	,	,	PUNCT
bibechana-4828	117	16	p.63	p.63	ADP
bibechana-4828	117	17	70	70	NUM
bibechana-4828	117	18	75	75	NUM
bibechana-4828	117	19	80	80	NUM
bibechana-4828	117	20	85	85	NUM
bibechana-4828	117	21	90	90	NUM
bibechana-4828	117	22	0.0	0.0	NUM
bibechana-4828	117	23	0.1	0.1	NUM
bibechana-4828	117	24	0.2	0.2	NUM
bibechana-4828	117	25	0.3	0.3	NUM
bibechana-4828	117	26	0.4	0.4	NUM
bibechana-4828	117	27	e	e	NOUN
bibechana-4828	117	28	tc	tc	NUM
bibechana-4828	117	29	h	h	NOUN
bibechana-4828	117	30	r	r	NOUN
bibechana-4828	117	31	a	a	DET
bibechana-4828	117	32	te	te	PROPN
bibechana-4828	117	33	(	(	PUNCT
bibechana-4828	117	34	µµ	µµ	NOUN
bibechana-4828	117	35	µµ	µµ	ADV
bibechana-4828	117	36	m	m	VERB
bibechana-4828	117	37	/m	/m	PUNCT
bibechana-4828	117	38	in	in	ADP
bibechana-4828	117	39	)	)	PUNCT
bibechana-4828	117	40	temperature	temperature	NOUN
bibechana-4828	117	41	(	(	PUNCT
bibechana-4828	117	42	0	0	NUM
bibechana-4828	117	43	c	c	NOUN
bibechana-4828	117	44	)	)	PUNCT
bibechana-4828	117	45	20	20	NUM
bibechana-4828	117	46	40	40	NUM
bibechana-4828	117	47	60	60	NUM
bibechana-4828	117	48	80	80	NUM
bibechana-4828	117	49	100	100	NUM
bibechana-4828	117	50	0	0	NUM
bibechana-4828	117	51	1	1	NUM
bibechana-4828	117	52	2	2	NUM
bibechana-4828	117	53	3	3	NUM
bibechana-4828	117	54	4	4	NUM
bibechana-4828	117	55	5	5	NUM
bibechana-4828	117	56	6	6	NUM
bibechana-4828	117	57	e	e	NOUN
bibechana-4828	117	58	tc	tc	NUM
bibechana-4828	117	59	h	h	NOUN
bibechana-4828	117	60	r	r	NOUN
bibechana-4828	117	61	a	a	DET
bibechana-4828	117	62	te	te	PROPN
bibechana-4828	117	63	(	(	PUNCT
bibechana-4828	117	64	µµ	µµ	NOUN
bibechana-4828	117	65	µµ	µµ	ADV
bibechana-4828	117	66	m	m	VERB
bibechana-4828	117	67	/m	/m	PUNCT
bibechana-4828	117	68	in	in	ADP
bibechana-4828	117	69	)	)	PUNCT
bibechana-4828	117	70	temperature	temperature	NOUN
bibechana-4828	117	71	(	(	PUNCT
bibechana-4828	117	72	0	0	NUM
bibechana-4828	117	73	c	c	NOUN
bibechana-4828	117	74	)	)	PUNCT
bibechana-4828	117	75	100	100	NUM
bibechana-4828	117	76	110	110	NUM
bibechana-4828	117	77	111	111	NUM
bibechana-4828	117	78	(	(	PUNCT
bibechana-4828	117	79	a	a	NOUN
bibechana-4828	117	80	)	)	PUNCT
bibechana-4828	117	81	(	(	PUNCT
bibechana-4828	117	82	b	b	X
bibechana-4828	117	83	)	)	PUNCT
bibechana-4828	117	84	0.0027	0.0027	NUM
bibechana-4828	117	85	0.0030	0.0030	NUM
bibechana-4828	117	86	0.0033	0.0033	NUM
bibechana-4828	117	87	-24	-24	PUNCT
bibechana-4828	117	88	-22	-22	SYM
bibechana-4828	117	89	-20	-20	NUM
bibechana-4828	117	90	-18	-18	NUM
bibechana-4828	117	91	-16	-16	PUNCT
bibechana-4828	117	92	ln	ln	NOUN
bibechana-4828	118	1	(	(	PUNCT
bibechana-4828	118	2	e	e	NOUN
bibechana-4828	118	3	r	r	NOUN
bibechana-4828	118	4	m	m	NOUN
bibechana-4828	118	5	/s	/s	PUNCT
bibechana-4828	118	6	)	)	PUNCT
bibechana-4828	119	1	1	1	NUM
bibechana-4828	119	2	/	/	SYM
bibechana-4828	119	3	t	t	PROPN
bibechana-4828	119	4	(	(	PUNCT
bibechana-4828	119	5	k	k	PROPN
bibechana-4828	119	6	-1	-1	PROPN
bibechana-4828	119	7	)	)	PUNCT
bibechana-4828	119	8	100	100	NUM
bibechana-4828	120	1	110	110	NUM
bibechana-4828	120	2	111	111	NUM
bibechana-4828	120	3	10	10	NUM
bibechana-4828	120	4	20	20	NUM
bibechana-4828	120	5	30	30	NUM
bibechana-4828	120	6	40	40	NUM
bibechana-4828	120	7	50	50	NUM
bibechana-4828	120	8	60	60	NUM
bibechana-4828	120	9	70	70	NUM
bibechana-4828	120	10	0.0	0.0	NUM
bibechana-4828	120	11	0.1	0.1	NUM
bibechana-4828	120	12	0.2	0.2	NUM
bibechana-4828	120	13	0.3	0.3	NUM
bibechana-4828	120	14	0.4	0.4	NUM
bibechana-4828	120	15	0.5	0.5	NUM
bibechana-4828	120	16	0.6	0.6	NUM
bibechana-4828	120	17	0.7	0.7	NUM
bibechana-4828	120	18	e	e	NOUN
bibechana-4828	120	19	tc	tc	NUM
bibechana-4828	121	1	h	h	NOUN
bibechana-4828	122	1	r	r	NOUN
bibechana-4828	122	2	a	a	DET
bibechana-4828	122	3	te	te	PROPN
bibechana-4828	122	4	(	(	PUNCT
bibechana-4828	122	5	m	m	PROPN
bibechana-4828	122	6	ic	ic	PROPN
bibechana-4828	122	7	ro	ro	PROPN
bibechana-4828	122	8	n	n	PROPN
bibechana-4828	122	9	/m	/m	PUNCT
bibechana-4828	122	10	in	in	ADP
bibechana-4828	122	11	)	)	PUNCT
bibechana-4828	122	12	koh	koh	PROPN
bibechana-4828	122	13	concentration	concentration	NOUN
bibechana-4828	122	14	(	(	PUNCT
bibechana-4828	122	15	wt	wt	NOUN
bibechana-4828	122	16	%	%	NOUN
bibechana-4828	122	17	)	)	PUNCT
bibechana-4828	122	18	100	100	NUM
bibechana-4828	122	19	110	110	NUM
bibechana-4828	122	20	111	111	NUM
bibechana-4828	122	21	(	(	PUNCT
bibechana-4828	122	22	c	c	NOUN
bibechana-4828	122	23	)	)	PUNCT
bibechana-4828	122	24	(	(	PUNCT
bibechana-4828	122	25	d	d	X
bibechana-4828	122	26	)	)	PUNCT
bibechana-4828	122	27	fig	fig	NOUN
bibechana-4828	122	28	.	.	PUNCT
bibechana-4828	123	1	2	2	NUM
bibechana-4828	123	2	:	:	PUNCT
bibechana-4828	123	3	behaviors	behavior	NOUN
bibechana-4828	123	4	of	of	ADP
bibechana-4828	123	5	etching	etch	VERB
bibechana-4828	123	6	of	of	ADP
bibechana-4828	123	7	crystalline	crystalline	ADJ
bibechana-4828	123	8	silicon	silicon	NOUN
bibechana-4828	123	9	:	:	PUNCT
bibechana-4828	123	10	(	(	PUNCT
bibechana-4828	123	11	a	a	X
bibechana-4828	123	12	)	)	PUNCT
bibechana-4828	123	13	variation	variation	NOUN
bibechana-4828	123	14	of	of	ADP
bibechana-4828	123	15	er	er	INTJ
bibechana-4828	123	16	along	along	ADP
bibechana-4828	123	17	(	(	PUNCT
bibechana-4828	123	18	111	111	NUM
bibechana-4828	123	19	)	)	PUNCT
bibechana-4828	123	20	plane	plane	NOUN
bibechana-4828	123	21	with	with	ADP
bibechana-4828	123	22	temperature	temperature	NOUN
bibechana-4828	123	23	(	(	PUNCT
bibechana-4828	123	24	b	b	NOUN
bibechana-4828	123	25	)	)	PUNCT
bibechana-4828	123	26	variation	variation	NOUN
bibechana-4828	123	27	of	of	ADP
bibechana-4828	123	28	er	er	INTJ
bibechana-4828	123	29	along	along	ADP
bibechana-4828	123	30	(	(	PUNCT
bibechana-4828	123	31	111	111	NUM
bibechana-4828	123	32	,	,	PUNCT
bibechana-4828	123	33	110	110	NUM
bibechana-4828	123	34	,	,	PUNCT
bibechana-4828	123	35	100	100	NUM
bibechana-4828	123	36	)	)	PUNCT
bibechana-4828	123	37	plane	plane	NOUN
bibechana-4828	123	38	with	with	ADP
bibechana-4828	123	39	temperature	temperature	NOUN
bibechana-4828	123	40	(	(	PUNCT
bibechana-4828	123	41	c	c	NOUN
bibechana-4828	123	42	)	)	PUNCT
bibechana-4828	123	43	arrhenius	arrhenius	NOUN
bibechana-4828	123	44	plot	plot	NOUN
bibechana-4828	123	45	of	of	ADP
bibechana-4828	123	46	er	er	INTJ
bibechana-4828	123	47	for	for	ADP
bibechana-4828	123	48	primary	primary	ADJ
bibechana-4828	123	49	crystal	crystal	NOUN
bibechana-4828	123	50	planes	plane	NOUN
bibechana-4828	123	51	(	(	PUNCT
bibechana-4828	123	52	d	d	NOUN
bibechana-4828	123	53	)	)	PUNCT
bibechana-4828	123	54	variation	variation	NOUN
bibechana-4828	123	55	of	of	ADP
bibechana-4828	123	56	er	er	INTJ
bibechana-4828	123	57	along	along	ADP
bibechana-4828	123	58	(	(	PUNCT
bibechana-4828	123	59	111	111	NUM
bibechana-4828	123	60	,	,	PUNCT
bibechana-4828	123	61	110	110	NUM
bibechana-4828	123	62	,	,	PUNCT
bibechana-4828	123	63	100	100	NUM
bibechana-4828	123	64	)	)	PUNCT
bibechana-4828	123	65	plane	plane	NOUN
bibechana-4828	123	66	with	with	ADP
bibechana-4828	123	67	koh	koh	PROPN
bibechana-4828	123	68	concentration	concentration	PROPN
bibechana-4828	123	69	3.2	3.2	NUM
bibechana-4828	123	70	association	association	NOUN
bibechana-4828	123	71	between	between	ADP
bibechana-4828	123	72	etch	etch	NOUN
bibechana-4828	123	73	rate	rate	NOUN
bibechana-4828	123	74	and	and	CCONJ
bibechana-4828	123	75	activation	activation	NOUN
bibechana-4828	123	76	energy	energy	NOUN
bibechana-4828	123	77	the	the	DET
bibechana-4828	123	78	macroscopic	macroscopic	ADJ
bibechana-4828	123	79	activation	activation	NOUN
bibechana-4828	123	80	energy	energy	NOUN
bibechana-4828	123	81	of	of	ADP
bibechana-4828	123	82	er	er	INTJ
bibechana-4828	123	83	is	be	AUX
bibechana-4828	123	84	explained	explain	VERB
bibechana-4828	123	85	by	by	ADP
bibechana-4828	123	86	the	the	DET
bibechana-4828	123	87	sum	sum	NOUN
bibechana-4828	123	88	of	of	ADP
bibechana-4828	123	89	two	two	NUM
bibechana-4828	123	90	terms	term	NOUN
bibechana-4828	123	91	.	.	PUNCT
bibechana-4828	124	1	one	one	NUM
bibechana-4828	124	2	corresponds	correspond	VERB
bibechana-4828	124	3	to	to	ADP
bibechana-4828	124	4	the	the	DET
bibechana-4828	124	5	average	average	NOUN
bibechana-4828	124	6	of	of	ADP
bibechana-4828	124	7	the	the	DET
bibechana-4828	124	8	microscopic	microscopic	ADJ
bibechana-4828	124	9	activation	activation	NOUN
bibechana-4828	124	10	energies	energy	NOUN
bibechana-4828	124	11	and	and	CCONJ
bibechana-4828	124	12	other	other	ADJ
bibechana-4828	124	13	accounts	account	NOUN
bibechana-4828	124	14	for	for	ADP
bibechana-4828	124	15	the	the	DET
bibechana-4828	124	16	existence	existence	NOUN
bibechana-4828	124	17	of	of	ADP
bibechana-4828	124	18	fluctuation	fluctuation	NOUN
bibechana-4828	124	19	in	in	ADP
bibechana-4828	124	20	the	the	DET
bibechana-4828	124	21	fraction	fraction	NOUN
bibechana-4828	124	22	of	of	ADP
bibechana-4828	124	23	particles	particle	NOUN
bibechana-4828	124	24	at	at	ADP
bibechana-4828	124	25	a	a	DET
bibechana-4828	124	26	fixed	fix	VERB
bibechana-4828	124	27	temperature	temperature	NOUN
bibechana-4828	124	28	.	.	PUNCT
bibechana-4828	125	1	er	er	INTJ
bibechana-4828	125	2	depends	depend	VERB
bibechana-4828	125	3	on	on	ADP
bibechana-4828	125	4	pi	pi	NOUN
bibechana-4828	125	5	and	and	CCONJ
bibechana-4828	125	6	t.	t.	NOUN
bibechana-4828	125	7	in	in	ADP
bibechana-4828	125	8	order	order	NOUN
bibechana-4828	125	9	to	to	PART
bibechana-4828	125	10	understand	understand	VERB
bibechana-4828	125	11	this	this	DET
bibechana-4828	125	12	point	point	NOUN
bibechana-4828	125	13	,	,	PUNCT
bibechana-4828	125	14	we	we	PRON
bibechana-4828	125	15	define	define	VERB
bibechana-4828	125	16	er	er	INTJ
bibechana-4828	125	17	as	as	ADP
bibechana-4828	125	18	∑	∑	VERB
bibechana-4828	125	19	∆	∆	NOUN
bibechana-4828	125	20	∆	∆	X
bibechana-4828	126	1	=	=	SYM
bibechana-4828	126	2	∆	∆	X
bibechana-4828	126	3	∆	∆	X
bibechana-4828	127	1	=	=	PUNCT
bibechana-4828	128	1	i	i	PRON
bibechana-4828	128	2	iimc	iimc	NOUN
bibechana-4828	129	1	mc	mc	PROPN
bibechana-4828	129	2	pz	pz	PROPN
bibechana-4828	129	3	tt	tt	PROPN
bibechana-4828	129	4	z	z	PROPN
bibechana-4828	129	5	er	er	INTJ
bibechana-4828	129	6	...	...	PUNCT
bibechana-4828	129	7	..	..	PUNCT
bibechana-4828	129	8	)	)	PUNCT
bibechana-4828	130	1	(	(	PUNCT
bibechana-4828	130	2	1	1	NUM
bibechana-4828	130	3	(	(	PUNCT
bibechana-4828	130	4	1	1	NUM
bibechana-4828	130	5	)	)	PUNCT
bibechana-4828	130	6	where	where	SCONJ
bibechana-4828	130	7	,	,	PUNCT
bibechana-4828	130	8	..	..	PUNCT
bibechana-4828	130	9	mcz∆	mcz∆	NUM
bibechana-4828	130	10	is	be	AUX
bibechana-4828	130	11	the	the	DET
bibechana-4828	130	12	distance	distance	NOUN
bibechana-4828	130	13	traveled	travel	VERB
bibechana-4828	130	14	by	by	ADP
bibechana-4828	130	15	the	the	DET
bibechana-4828	130	16	center	center	NOUN
bibechana-4828	130	17	of	of	ADP
bibechana-4828	130	18	mass	mass	NOUN
bibechana-4828	130	19	of	of	ADP
bibechana-4828	130	20	the	the	DET
bibechana-4828	130	21	surface	surface	NOUN
bibechana-4828	130	22	,	,	PUNCT
bibechana-4828	130	23	pi	pi	NOUN
bibechana-4828	130	24	,	,	PUNCT
bibechana-4828	130	25	is	be	AUX
bibechana-4828	130	26	the	the	DET
bibechana-4828	130	27	removal	removal	NOUN
bibechana-4828	130	28	probability	probability	NOUN
bibechana-4828	130	29	of	of	ADP
bibechana-4828	130	30	the	the	DET
bibechana-4828	130	31	surface	surface	NOUN
bibechana-4828	130	32	atom	atom	NOUN
bibechana-4828	130	33	i	i	PRON
bibechana-4828	130	34	,	,	PUNCT
bibechana-4828	130	35	and	and	CCONJ
bibechana-4828	130	36	is	be	AUX
bibechana-4828	130	37	given	give	VERB
bibechana-4828	130	38	by	by	ADP
bibechana-4828	130	39	tk	tk	PROPN
bibechana-4828	130	40	e	e	PROPN
bibechana-4828	130	41	ii	ii	PROPN
bibechana-4828	130	42	b	b	PROPN
bibechana-4828	130	43	ia	ia	PROPN
bibechana-4828	130	44	epp	epp	PROPN
bibechana-4828	130	45	−	−	PROPN
bibechana-4828	130	46	=	=	SYM
bibechana-4828	130	47	0	0	NUM
bibechana-4828	130	48	(	(	PUNCT
bibechana-4828	130	49	2	2	NUM
bibechana-4828	130	50	)	)	PUNCT
bibechana-4828	130	51	shobha	shobha	NOUN
bibechana-4828	130	52	kanta	kanta	PROPN
bibechana-4828	130	53	lamichhane	lamichhane	PROPN
bibechana-4828	130	54	/	/	SYM
bibechana-4828	130	55	bibechana	bibechana	PROPN
bibechana-4828	130	56	8	8	NUM
bibechana-4828	130	57	(	(	PUNCT
bibechana-4828	130	58	2012	2012	NUM
bibechana-4828	130	59	)	)	PUNCT
bibechana-4828	130	60	59	59	NUM
bibechana-4828	130	61	-	-	SYM
bibechana-4828	130	62	65	65	NUM
bibechana-4828	130	63	:	:	PUNCT
bibechana-4828	130	64	bmhss	bmhss	PROPN
bibechana-4828	130	65	,	,	PUNCT
bibechana-4828	130	66	p.64	p.64	PROPN
bibechana-4828	130	67	where	where	SCONJ
bibechana-4828	130	68	t	t	PROPN
bibechana-4828	130	69	is	be	AUX
bibechana-4828	130	70	the	the	DET
bibechana-4828	130	71	temperature	temperature	NOUN
bibechana-4828	130	72	,	,	PUNCT
bibechana-4828	130	73	kb	kb	PROPN
bibechana-4828	130	74	is	be	AUX
bibechana-4828	130	75	the	the	DET
bibechana-4828	130	76	boltzmann	boltzmann	PROPN
bibechana-4828	130	77	constant	constant	PROPN
bibechana-4828	130	78	,	,	PUNCT
bibechana-4828	130	79	eai	eai	PROPN
bibechana-4828	130	80	is	be	AUX
bibechana-4828	130	81	the	the	DET
bibechana-4828	130	82	microscopic	microscopic	ADJ
bibechana-4828	130	83	activation	activation	NOUN
bibechana-4828	130	84	energy	energy	NOUN
bibechana-4828	130	85	for	for	ADP
bibechana-4828	130	86	removal	removal	NOUN
bibechana-4828	130	87	of	of	ADP
bibechana-4828	130	88	site	site	NOUN
bibechana-4828	131	1	i	i	PRON
bibechana-4828	131	2	and	and	CCONJ
bibechana-4828	131	3	poi	poi	PROPN
bibechana-4828	131	4	is	be	AUX
bibechana-4828	131	5	a	a	DET
bibechana-4828	131	6	prefactor	prefactor	NOUN
bibechana-4828	131	7	.	.	PUNCT
bibechana-4828	132	1	hence	hence	ADV
bibechana-4828	132	2	,	,	PUNCT
bibechana-4828	132	3	macroscopic	macroscopic	ADJ
bibechana-4828	132	4	and	and	CCONJ
bibechana-4828	132	5	microscopic	microscopic	ADJ
bibechana-4828	132	6	activation	activation	NOUN
bibechana-4828	132	7	energy	energy	NOUN
bibechana-4828	132	8	and	and	CCONJ
bibechana-4828	132	9	temperature	temperature	NOUN
bibechana-4828	132	10	are	be	AUX
bibechana-4828	132	11	interrelated	interrelated	ADJ
bibechana-4828	132	12	.	.	PUNCT
bibechana-4828	133	1	thus	thus	ADV
bibechana-4828	133	2	,	,	PUNCT
bibechana-4828	133	3	er	er	INTJ
bibechana-4828	133	4	is	be	AUX
bibechana-4828	133	5	the	the	DET
bibechana-4828	133	6	distance	distance	NOUN
bibechana-4828	133	7	traveled	travel	VERB
bibechana-4828	133	8	by	by	ADP
bibechana-4828	133	9	the	the	DET
bibechana-4828	133	10	moving	move	VERB
bibechana-4828	133	11	surface	surface	NOUN
bibechana-4828	133	12	per	per	ADP
bibechana-4828	133	13	unit	unit	NOUN
bibechana-4828	133	14	time	time	NOUN
bibechana-4828	133	15	.	.	PUNCT
bibechana-4828	134	1	when	when	SCONJ
bibechana-4828	134	2	the	the	DET
bibechana-4828	134	3	etching	etch	VERB
bibechana-4828	134	4	process	process	NOUN
bibechana-4828	134	5	has	have	AUX
bibechana-4828	134	6	reached	reach	VERB
bibechana-4828	134	7	steady	steady	ADJ
bibechana-4828	134	8	state	state	NOUN
bibechana-4828	134	9	,	,	PUNCT
bibechana-4828	134	10	er	er	INTJ
bibechana-4828	134	11	is	be	AUX
bibechana-4828	134	12	simply	simply	ADV
bibechana-4828	134	13	the	the	DET
bibechana-4828	134	14	ratio	ratio	NOUN
bibechana-4828	134	15	of	of	ADP
bibechana-4828	134	16	the	the	DET
bibechana-4828	134	17	distance	distance	NOUN
bibechana-4828	134	18	traveled	travel	VERB
bibechana-4828	134	19	by	by	ADP
bibechana-4828	134	20	the	the	DET
bibechana-4828	134	21	center	center	NOUN
bibechana-4828	134	22	of	of	ADP
bibechana-4828	134	23	mass	mass	NOUN
bibechana-4828	134	24	(	(	PUNCT
bibechana-4828	134	25	cm	cm	NOUN
bibechana-4828	134	26	)	)	PUNCT
bibechana-4828	134	27	of	of	ADP
bibechana-4828	134	28	the	the	DET
bibechana-4828	134	29	surface	surface	NOUN
bibechana-4828	134	30	(	(	PUNCT
bibechana-4828	134	31	zcm	zcm	NOUN
bibechana-4828	134	32	)	)	PUNCT
bibechana-4828	134	33	to	to	ADP
bibechana-4828	134	34	the	the	DET
bibechana-4828	134	35	period	period	NOUN
bibechana-4828	134	36	of	of	ADP
bibechana-4828	134	37	time	time	NOUN
bibechana-4828	134	38	elapsed	elapse	VERB
bibechana-4828	134	39	(	(	PUNCT
bibechana-4828	134	40	t	t	NOUN
bibechana-4828	134	41	)	)	PUNCT
bibechana-4828	134	42	.	.	PUNCT
bibechana-4828	135	1	i.e.	i.e.	X
bibechana-4828	135	2	er	er	X
bibechana-4828	135	3	=	=	ADJ
bibechana-4828	135	4	zcm	zcm	NOUN
bibechana-4828	135	5	/	/	SYM
bibechana-4828	135	6	t.	t.	NOUN
bibechana-4828	135	7	during	during	ADP
bibechana-4828	135	8	a	a	DET
bibechana-4828	135	9	modeling	modeling	NOUN
bibechana-4828	135	10	,	,	PUNCT
bibechana-4828	135	11	zcm	zcm	NOUN
bibechana-4828	135	12	can	can	AUX
bibechana-4828	135	13	be	be	AUX
bibechana-4828	135	14	determined	determine	VERB
bibechana-4828	135	15	as	as	ADP
bibechana-4828	135	16	the	the	DET
bibechana-4828	135	17	sum	sum	NOUN
bibechana-4828	135	18	of	of	ADP
bibechana-4828	135	19	all	all	DET
bibechana-4828	135	20	individual	individual	ADJ
bibechana-4828	135	21	shifts	shift	NOUN
bibechana-4828	135	22	(	(	PUNCT
bibechana-4828	135	23	zcm)i	zcm)i	NOUN
bibechana-4828	135	24	of	of	ADP
bibechana-4828	135	25	the	the	DET
bibechana-4828	135	26	surface	surface	NOUN
bibechana-4828	135	27	following	follow	VERB
bibechana-4828	135	28	each	each	DET
bibechana-4828	135	29	successful	successful	ADJ
bibechana-4828	135	30	event	event	NOUN
bibechana-4828	135	31	,	,	PUNCT
bibechana-4828	135	32	i.e.	i.e.	X
bibechana-4828	135	33	the	the	DET
bibechana-4828	135	34	sum	sum	NOUN
bibechana-4828	135	35	over	over	ADP
bibechana-4828	135	36	all	all	DET
bibechana-4828	135	37	successful	successful	ADJ
bibechana-4828	135	38	particle	particle	NOUN
bibechana-4828	135	39	removal	removal	NOUN
bibechana-4828	135	40	is	be	AUX
bibechana-4828	135	41	occurring	occur	VERB
bibechana-4828	135	42	during	during	ADP
bibechana-4828	135	43	‘	'	PUNCT
bibechana-4828	135	44	t	t	X
bibechana-4828	135	45	’	'	PUNCT
bibechana-4828	135	46	.	.	PUNCT
bibechana-4828	136	1	although	although	SCONJ
bibechana-4828	136	2	(	(	PUNCT
bibechana-4828	136	3	zcm)i	zcm)i	PROPN
bibechana-4828	136	4	is	be	AUX
bibechana-4828	136	5	typically	typically	ADV
bibechana-4828	136	6	positive	positive	ADJ
bibechana-4828	136	7	,	,	PUNCT
bibechana-4828	136	8	occasionally	occasionally	ADV
bibechana-4828	136	9	it	it	PRON
bibechana-4828	136	10	may	may	AUX
bibechana-4828	136	11	be	be	AUX
bibechana-4828	136	12	negative	negative	ADJ
bibechana-4828	136	13	if	if	SCONJ
bibechana-4828	136	14	the	the	DET
bibechana-4828	136	15	removal	removal	NOUN
bibechana-4828	136	16	of	of	ADP
bibechana-4828	136	17	site	site	NOUN
bibechana-4828	136	18	i	i	PRON
bibechana-4828	136	19	involves	involve	VERB
bibechana-4828	136	20	a	a	DET
bibechana-4828	136	21	reduction	reduction	NOUN
bibechana-4828	136	22	in	in	ADP
bibechana-4828	136	23	the	the	DET
bibechana-4828	136	24	total	total	ADJ
bibechana-4828	136	25	number	number	NOUN
bibechana-4828	136	26	of	of	ADP
bibechana-4828	136	27	surface	surface	NOUN
bibechana-4828	136	28	sites	site	NOUN
bibechana-4828	136	29	[	[	X
bibechana-4828	136	30	14	14	NUM
bibechana-4828	136	31	]	]	PUNCT
bibechana-4828	136	32	.	.	PUNCT
bibechana-4828	137	1	in	in	ADP
bibechana-4828	137	2	particular	particular	ADJ
bibechana-4828	137	3	,	,	PUNCT
bibechana-4828	137	4	certain	certain	ADJ
bibechana-4828	137	5	sitetypes	sitetype	NOUN
bibechana-4828	137	6	of	of	ADP
bibechana-4828	137	7	our	our	PRON
bibechana-4828	137	8	formula	formula	NOUN
bibechana-4828	137	9	for	for	ADP
bibechana-4828	137	10	wet	wet	ADJ
bibechana-4828	137	11	chemical	chemical	NOUN
bibechana-4828	137	12	etching	etch	VERB
bibechana-4828	137	13	,	,	PUNCT
bibechana-4828	137	14	typically	typically	ADV
bibechana-4828	137	15	contribute	contribute	VERB
bibechana-4828	137	16	to	to	ADP
bibechana-4828	137	17	the	the	DET
bibechana-4828	137	18	motion	motion	NOUN
bibechana-4828	137	19	of	of	ADP
bibechana-4828	137	20	the	the	DET
bibechana-4828	137	21	cm	cm	NOUN
bibechana-4828	137	22	with	with	ADP
bibechana-4828	137	23	a	a	DET
bibechana-4828	137	24	negative	negative	ADJ
bibechana-4828	137	25	shift	shift	NOUN
bibechana-4828	137	26	on	on	ADP
bibechana-4828	137	27	average	average	ADJ
bibechana-4828	137	28	.	.	PUNCT
bibechana-4828	138	1	alternatively	alternatively	ADV
bibechana-4828	138	2	,	,	PUNCT
bibechana-4828	138	3	we	we	PRON
bibechana-4828	138	4	may	may	AUX
bibechana-4828	138	5	consider	consider	VERB
bibechana-4828	138	6	the	the	DET
bibechana-4828	138	7	sum	sum	NOUN
bibechana-4828	138	8	over	over	ADP
bibechana-4828	138	9	all	all	DET
bibechana-4828	138	10	events	event	NOUN
bibechana-4828	138	11	,	,	PUNCT
bibechana-4828	138	12	independently	independently	ADV
bibechana-4828	138	13	of	of	ADP
bibechana-4828	138	14	whether	whether	SCONJ
bibechana-4828	138	15	the	the	DET
bibechana-4828	138	16	event	event	NOUN
bibechana-4828	138	17	is	be	AUX
bibechana-4828	138	18	a	a	DET
bibechana-4828	138	19	successful	successful	ADJ
bibechana-4828	138	20	removal	removal	NOUN
bibechana-4828	138	21	or	or	CCONJ
bibechana-4828	138	22	not	not	PART
bibechana-4828	138	23	.	.	PUNCT
bibechana-4828	139	1	note	note	VERB
bibechana-4828	139	2	that	that	SCONJ
bibechana-4828	139	3	the	the	DET
bibechana-4828	139	4	positive	positive	ADJ
bibechana-4828	139	5	/	/	SYM
bibechana-4828	139	6	negative	negative	ADJ
bibechana-4828	139	7	shift	shift	NOUN
bibechana-4828	139	8	of	of	ADP
bibechana-4828	139	9	the	the	DET
bibechana-4828	139	10	cm	cm	NOUN
bibechana-4828	139	11	of	of	ADP
bibechana-4828	139	12	the	the	DET
bibechana-4828	139	13	surface	surface	NOUN
bibechana-4828	139	14	due	due	ADP
bibechana-4828	139	15	to	to	ADP
bibechana-4828	139	16	the	the	DET
bibechana-4828	139	17	removal	removal	NOUN
bibechana-4828	139	18	of	of	ADP
bibechana-4828	139	19	atom	atom	NOUN
bibechana-4828	139	20	i	i	PRON
bibechana-4828	139	21	,	,	PUNCT
bibechana-4828	139	22	(	(	PUNCT
bibechana-4828	139	23	zcm)i	zcm)i	PROPN
bibechana-4828	139	24	,	,	PUNCT
bibechana-4828	139	25	may	may	AUX
bibechana-4828	139	26	be	be	AUX
bibechana-4828	139	27	calculated	calculate	VERB
bibechana-4828	139	28	independently	independently	ADV
bibechana-4828	139	29	,	,	PUNCT
bibechana-4828	139	30	whether	whether	SCONJ
bibechana-4828	139	31	the	the	DET
bibechana-4828	139	32	atom	atom	NOUN
bibechana-4828	139	33	is	be	AUX
bibechana-4828	139	34	removed	remove	VERB
bibechana-4828	139	35	or	or	CCONJ
bibechana-4828	139	36	not	not	PART
bibechana-4828	139	37	.	.	PUNCT
bibechana-4828	140	1	equation	equation	NOUN
bibechana-4828	140	2	suggests	suggest	VERB
bibechana-4828	140	3	that	that	SCONJ
bibechana-4828	140	4	the	the	DET
bibechana-4828	140	5	etch	etch	NOUN
bibechana-4828	140	6	rate	rate	NOUN
bibechana-4828	140	7	is	be	AUX
bibechana-4828	140	8	composed	compose	VERB
bibechana-4828	140	9	of	of	ADP
bibechana-4828	140	10	two	two	NUM
bibechana-4828	140	11	factors	factor	NOUN
bibechana-4828	140	12	:	:	PUNCT
bibechana-4828	140	13	one	one	NUM
bibechana-4828	140	14	purely	purely	ADV
bibechana-4828	140	15	geometrical	geometrical	ADJ
bibechana-4828	140	16	(	(	PUNCT
bibechana-4828	140	17	the	the	DET
bibechana-4828	140	18	cm	cm	NOUN
bibechana-4828	140	19	-	-	PUNCT
bibechana-4828	140	20	shifts	shift	NOUN
bibechana-4828	140	21	)	)	PUNCT
bibechana-4828	140	22	and	and	CCONJ
bibechana-4828	140	23	one	one	NUM
bibechana-4828	140	24	purely	purely	ADV
bibechana-4828	140	25	numerical	numerical	ADJ
bibechana-4828	140	26	.	.	PUNCT
bibechana-4828	141	1	indeed	indeed	ADV
bibechana-4828	141	2	,	,	PUNCT
bibechana-4828	141	3	er	er	INTJ
bibechana-4828	141	4	is	be	AUX
bibechana-4828	141	5	proportional	proportional	ADJ
bibechana-4828	141	6	to	to	ADP
bibechana-4828	141	7	the	the	DET
bibechana-4828	141	8	average	average	ADJ
bibechana-4828	141	9	number	number	NOUN
bibechana-4828	141	10	of	of	ADP
bibechana-4828	141	11	surface	surface	NOUN
bibechana-4828	141	12	atoms	atom	NOUN
bibechana-4828	141	13	removed	remove	VERB
bibechana-4828	141	14	from	from	ADP
bibechana-4828	141	15	the	the	DET
bibechana-4828	141	16	surface	surface	NOUN
bibechana-4828	141	17	per	per	ADP
bibechana-4828	141	18	unit	unit	NOUN
bibechana-4828	141	19	time	time	NOUN
bibechana-4828	141	20	.	.	PUNCT
bibechana-4828	142	1	here	here	ADV
bibechana-4828	142	2	,	,	PUNCT
bibechana-4828	142	3	proportionality	proportionality	NOUN
bibechana-4828	142	4	constant	constant	ADJ
bibechana-4828	142	5	(	(	PUNCT
bibechana-4828	142	6	z	z	NOUN
bibechana-4828	142	7	)	)	PUNCT
bibechana-4828	142	8	is	be	AUX
bibechana-4828	142	9	precisely	precisely	ADV
bibechana-4828	142	10	a	a	DET
bibechana-4828	142	11	measure	measure	NOUN
bibechana-4828	142	12	of	of	ADP
bibechana-4828	142	13	the	the	DET
bibechana-4828	142	14	average	average	ADJ
bibechana-4828	142	15	shifts	shift	NOUN
bibechana-4828	142	16	in	in	ADP
bibechana-4828	142	17	the	the	DET
bibechana-4828	142	18	cm	cm	NOUN
bibechana-4828	142	19	of	of	ADP
bibechana-4828	142	20	the	the	DET
bibechana-4828	142	21	surface	surface	NOUN
bibechana-4828	142	22	per	per	ADP
bibechana-4828	142	23	removed	remove	VERB
bibechana-4828	142	24	atom	atom	NOUN
bibechana-4828	142	25	.	.	PUNCT
bibechana-4828	143	1	z	z	NOUN
bibechana-4828	143	2	is	be	AUX
bibechana-4828	143	3	an	an	DET
bibechana-4828	143	4	exclusively	exclusively	ADV
bibechana-4828	143	5	geometrical	geometrical	ADJ
bibechana-4828	143	6	feature	feature	NOUN
bibechana-4828	143	7	of	of	ADP
bibechana-4828	143	8	the	the	DET
bibechana-4828	143	9	er	er	INTJ
bibechana-4828	143	10	.	.	PUNCT
bibechana-4828	144	1	in	in	ADP
bibechana-4828	144	2	particular	particular	ADJ
bibechana-4828	144	3	,	,	PUNCT
bibechana-4828	144	4	it	it	PRON
bibechana-4828	144	5	is	be	AUX
bibechana-4828	144	6	independent	independent	ADJ
bibechana-4828	144	7	of	of	ADP
bibechana-4828	144	8	temperature	temperature	NOUN
bibechana-4828	144	9	.	.	PUNCT
bibechana-4828	145	1	although	although	SCONJ
bibechana-4828	145	2	z	z	NOUN
bibechana-4828	145	3	may	may	AUX
bibechana-4828	145	4	take	take	VERB
bibechana-4828	145	5	different	different	ADJ
bibechana-4828	145	6	values	value	NOUN
bibechana-4828	145	7	for	for	ADP
bibechana-4828	145	8	different	different	ADJ
bibechana-4828	145	9	surface	surface	NOUN
bibechana-4828	145	10	orientations	orientation	NOUN
bibechana-4828	145	11	,	,	PUNCT
bibechana-4828	145	12	z	z	PROPN
bibechana-4828	145	13	does	do	AUX
bibechana-4828	145	14	not	not	PART
bibechana-4828	145	15	depend	depend	VERB
bibechana-4828	145	16	on	on	ADP
bibechana-4828	145	17	temperature	temperature	NOUN
bibechana-4828	145	18	for	for	ADP
bibechana-4828	145	19	a	a	DET
bibechana-4828	145	20	specified	specify	VERB
bibechana-4828	145	21	orientation	orientation	NOUN
bibechana-4828	145	22	.	.	PUNCT
bibechana-4828	146	1	this	this	PRON
bibechana-4828	146	2	is	be	AUX
bibechana-4828	146	3	an	an	DET
bibechana-4828	146	4	important	important	ADJ
bibechana-4828	146	5	observation	observation	NOUN
bibechana-4828	146	6	because	because	SCONJ
bibechana-4828	146	7	the	the	DET
bibechana-4828	146	8	appearance	appearance	NOUN
bibechana-4828	146	9	of	of	ADP
bibechana-4828	146	10	negative	negative	ADJ
bibechana-4828	146	11	cm	cm	NOUN
bibechana-4828	146	12	-	-	PUNCT
bibechana-4828	146	13	shifts	shift	NOUN
bibechana-4828	146	14	(	(	PUNCT
bibechana-4828	146	15	zcm)i	zcm)i	PROPN
bibechana-4828	146	16	may	may	AUX
bibechana-4828	146	17	be	be	AUX
bibechana-4828	146	18	accepted	accept	VERB
bibechana-4828	146	19	as	as	ADP
bibechana-4828	146	20	the	the	DET
bibechana-4828	146	21	interpretation	interpretation	NOUN
bibechana-4828	146	22	of	of	ADP
bibechana-4828	146	23	the	the	DET
bibechana-4828	146	24	relative	relative	ADJ
bibechana-4828	146	25	importance	importance	NOUN
bibechana-4828	146	26	(	(	PUNCT
bibechana-4828	146	27	weight	weight	NOUN
bibechana-4828	146	28	)	)	PUNCT
bibechana-4828	146	29	of	of	ADP
bibechana-4828	146	30	the	the	DET
bibechana-4828	146	31	different	different	ADJ
bibechana-4828	146	32	particle	particle	NOUN
bibechana-4828	146	33	types	type	NOUN
bibechana-4828	146	34	for	for	ADP
bibechana-4828	146	35	the	the	DET
bibechana-4828	146	36	calculation	calculation	NOUN
bibechana-4828	146	37	of	of	ADP
bibechana-4828	146	38	an	an	DET
bibechana-4828	146	39	average	average	NOUN
bibechana-4828	146	40	.	.	PUNCT
bibechana-4828	147	1	actually	actually	ADV
bibechana-4828	147	2	,	,	PUNCT
bibechana-4828	147	3	the	the	DET
bibechana-4828	147	4	interpretation	interpretation	NOUN
bibechana-4828	147	5	becomes	become	VERB
bibechana-4828	147	6	meaningless	meaningless	ADJ
bibechana-4828	147	7	if	if	SCONJ
bibechana-4828	147	8	some	some	PRON
bibechana-4828	147	9	of	of	ADP
bibechana-4828	147	10	the	the	DET
bibechana-4828	147	11	weights	weight	NOUN
bibechana-4828	147	12	are	be	AUX
bibechana-4828	147	13	negative	negative	ADJ
bibechana-4828	147	14	.	.	PUNCT
bibechana-4828	148	1	however	however	ADV
bibechana-4828	148	2	,	,	PUNCT
bibechana-4828	148	3	the	the	DET
bibechana-4828	148	4	use	use	NOUN
bibechana-4828	148	5	of	of	ADP
bibechana-4828	148	6	i	i	PRON
bibechana-4828	148	7	is	be	AUX
bibechana-4828	148	8	free	free	ADJ
bibechana-4828	148	9	of	of	ADP
bibechana-4828	148	10	these	these	DET
bibechana-4828	148	11	artifacts	artifact	NOUN
bibechana-4828	148	12	and	and	CCONJ
bibechana-4828	148	13	allows	allow	VERB
bibechana-4828	148	14	unambiguous	unambiguous	ADJ
bibechana-4828	148	15	interpretation	interpretation	NOUN
bibechana-4828	148	16	,	,	PUNCT
bibechana-4828	148	17	as	as	SCONJ
bibechana-4828	148	18	shown	show	VERB
bibechana-4828	148	19	in	in	ADP
bibechana-4828	148	20	this	this	DET
bibechana-4828	148	21	study	study	NOUN
bibechana-4828	148	22	.	.	PUNCT
bibechana-4828	149	1	there	there	PRON
bibechana-4828	149	2	are	be	VERB
bibechana-4828	149	3	three	three	NUM
bibechana-4828	149	4	alternate	alternate	ADJ
bibechana-4828	149	5	ways	way	NOUN
bibechana-4828	149	6	to	to	PART
bibechana-4828	149	7	determine	determine	VERB
bibechana-4828	149	8	the	the	DET
bibechana-4828	149	9	rate	rate	NOUN
bibechana-4828	149	10	of	of	ADP
bibechana-4828	149	11	removal	removal	NOUN
bibechana-4828	149	12	of	of	ADP
bibechana-4828	149	13	particles	particle	NOUN
bibechana-4828	149	14	[	[	X
bibechana-4828	149	15	15	15	NUM
bibechana-4828	149	16	]	]	X
bibechana-4828	149	17	:	:	PUNCT
bibechana-4828	149	18	(	(	PUNCT
bibechana-4828	149	19	i	i	NOUN
bibechana-4828	149	20	)	)	PUNCT
bibechana-4828	149	21	as	as	SCONJ
bibechana-4828	149	22	in	in	ADP
bibechana-4828	149	23	the	the	DET
bibechana-4828	149	24	case	case	NOUN
bibechana-4828	149	25	of	of	ADP
bibechana-4828	149	26	the	the	DET
bibechana-4828	149	27	er	er	INTJ
bibechana-4828	149	28	,	,	PUNCT
bibechana-4828	149	29	of	of	ADP
bibechana-4828	149	30	the	the	DET
bibechana-4828	149	31	removal	removal	NOUN
bibechana-4828	149	32	of	of	ADP
bibechana-4828	149	33	particles	particle	NOUN
bibechana-4828	149	34	can	can	AUX
bibechana-4828	149	35	be	be	AUX
bibechana-4828	149	36	determined	determine	VERB
bibechana-4828	149	37	using	use	VERB
bibechana-4828	149	38	only	only	ADJ
bibechana-4828	149	39	successful	successful	ADJ
bibechana-4828	149	40	events	event	NOUN
bibechana-4828	149	41	.	.	PUNCT
bibechana-4828	150	1	note	note	VERB
bibechana-4828	150	2	that	that	SCONJ
bibechana-4828	150	3	the	the	DET
bibechana-4828	150	4	averages	average	NOUN
bibechana-4828	150	5	of	of	ADP
bibechana-4828	150	6	the	the	DET
bibechana-4828	150	7	number	number	NOUN
bibechana-4828	150	8	of	of	ADP
bibechana-4828	150	9	surface	surface	NOUN
bibechana-4828	150	10	atoms	atom	NOUN
bibechana-4828	150	11	n	n	PRON
bibechana-4828	150	12	are	be	AUX
bibechana-4828	150	13	not	not	PART
bibechana-4828	150	14	constant	constant	ADJ
bibechana-4828	150	15	.	.	PUNCT
bibechana-4828	151	1	(	(	PUNCT
bibechana-4828	151	2	ii	ii	NOUN
bibechana-4828	151	3	)	)	PUNCT
bibechana-4828	151	4	the	the	DET
bibechana-4828	151	5	rate	rate	NOUN
bibechana-4828	151	6	of	of	ADP
bibechana-4828	151	7	removal	removal	NOUN
bibechana-4828	151	8	of	of	ADP
bibechana-4828	151	9	particles	particle	NOUN
bibechana-4828	151	10	can	can	AUX
bibechana-4828	151	11	be	be	AUX
bibechana-4828	151	12	written	write	VERB
bibechana-4828	151	13	in	in	ADP
bibechana-4828	151	14	terms	term	NOUN
bibechana-4828	151	15	of	of	ADP
bibechana-4828	151	16	a	a	DET
bibechana-4828	151	17	sum	sum	NOUN
bibechana-4828	151	18	over	over	ADP
bibechana-4828	151	19	the	the	DET
bibechana-4828	151	20	different	different	ADJ
bibechana-4828	151	21	types	type	NOUN
bibechana-4828	151	22	of	of	ADP
bibechana-4828	151	23	surface	surface	NOUN
bibechana-4828	151	24	sites	site	NOUN
bibechana-4828	151	25	.	.	PUNCT
bibechana-4828	152	1	the	the	DET
bibechana-4828	152	2	rate	rate	NOUN
bibechana-4828	152	3	of	of	ADP
bibechana-4828	152	4	removal	removal	NOUN
bibechana-4828	152	5	of	of	ADP
bibechana-4828	152	6	particles	particle	NOUN
bibechana-4828	152	7	may	may	AUX
bibechana-4828	152	8	also	also	ADV
bibechana-4828	152	9	be	be	AUX
bibechana-4828	152	10	expressed	express	VERB
bibechana-4828	152	11	in	in	ADP
bibechana-4828	152	12	terms	term	NOUN
bibechana-4828	152	13	of	of	ADP
bibechana-4828	152	14	the	the	DET
bibechana-4828	152	15	average	average	ADJ
bibechana-4828	152	16	fraction	fraction	NOUN
bibechana-4828	152	17	of	of	ADP
bibechana-4828	152	18	particles	particle	NOUN
bibechana-4828	152	19	removed	remove	VERB
bibechana-4828	152	20	per	per	ADP
bibechana-4828	152	21	unit	unit	NOUN
bibechana-4828	152	22	time	time	NOUN
bibechana-4828	152	23	.	.	PUNCT
bibechana-4828	153	1	here	here	ADV
bibechana-4828	153	2	we	we	PRON
bibechana-4828	153	3	have	have	AUX
bibechana-4828	153	4	defined	define	VERB
bibechana-4828	153	5	as	as	ADP
bibechana-4828	153	6	the	the	DET
bibechana-4828	153	7	average	average	ADJ
bibechana-4828	153	8	fraction	fraction	NOUN
bibechana-4828	153	9	of	of	ADP
bibechana-4828	153	10	particles	particle	NOUN
bibechana-4828	153	11	.	.	PUNCT
bibechana-4828	154	1	activation	activation	NOUN
bibechana-4828	154	2	energy	energy	NOUN
bibechana-4828	154	3	,	,	PUNCT
bibechana-4828	154	4	in	in	ADP
bibechana-4828	154	5	relation	relation	NOUN
bibechana-4828	154	6	to	to	ADP
bibechana-4828	154	7	the	the	DET
bibechana-4828	154	8	er	er	INTJ
bibechana-4828	154	9	,	,	PUNCT
bibechana-4828	154	10	the	the	DET
bibechana-4828	154	11	activation	activation	NOUN
bibechana-4828	154	12	energy	energy	NOUN
bibechana-4828	154	13	(	(	PUNCT
bibechana-4828	154	14	ea	ea	NOUN
bibechana-4828	154	15	)	)	PUNCT
bibechana-4828	154	16	is	be	AUX
bibechana-4828	154	17	,	,	PUNCT
bibechana-4828	154	18	by	by	ADP
bibechana-4828	154	19	definition	definition	NOUN
bibechana-4828	154	20	,	,	PUNCT
bibechana-4828	154	21	the	the	DET
bibechana-4828	154	22	slope	slope	NOUN
bibechana-4828	154	23	of	of	ADP
bibechana-4828	154	24	the	the	DET
bibechana-4828	154	25	curve	curve	NOUN
bibechana-4828	154	26	.	.	PUNCT
bibechana-4828	155	1	3.3	3.3	NUM
bibechana-4828	155	2	etched	etch	VERB
bibechana-4828	155	3	crystallographic	crystallographic	ADJ
bibechana-4828	155	4	planes	plane	NOUN
bibechana-4828	155	5	it	it	PRON
bibechana-4828	155	6	is	be	AUX
bibechana-4828	155	7	essential	essential	ADJ
bibechana-4828	155	8	to	to	PART
bibechana-4828	155	9	monitor	monitor	VERB
bibechana-4828	155	10	the	the	DET
bibechana-4828	155	11	evolution	evolution	NOUN
bibechana-4828	155	12	of	of	ADP
bibechana-4828	155	13	the	the	DET
bibechana-4828	155	14	surface	surface	NOUN
bibechana-4828	155	15	configuration	configuration	NOUN
bibechana-4828	155	16	and	and	CCONJ
bibechana-4828	155	17	roughness	roughness	NOUN
bibechana-4828	155	18	during	during	ADP
bibechana-4828	155	19	etching	etch	VERB
bibechana-4828	155	20	.	.	PUNCT
bibechana-4828	156	1	although	although	SCONJ
bibechana-4828	156	2	we	we	PRON
bibechana-4828	156	3	are	be	AUX
bibechana-4828	156	4	dealing	deal	VERB
bibechana-4828	156	5	with	with	ADP
bibechana-4828	156	6	ideal	ideal	ADJ
bibechana-4828	156	7	conditions	condition	NOUN
bibechana-4828	156	8	,	,	PUNCT
bibechana-4828	156	9	this	this	PRON
bibechana-4828	156	10	gives	give	VERB
bibechana-4828	156	11	us	we	PRON
bibechana-4828	156	12	an	an	DET
bibechana-4828	156	13	idea	idea	NOUN
bibechana-4828	156	14	of	of	ADP
bibechana-4828	156	15	the	the	DET
bibechana-4828	156	16	difference	difference	NOUN
bibechana-4828	156	17	in	in	ADP
bibechana-4828	156	18	etching	etch	VERB
bibechana-4828	156	19	between	between	ADP
bibechana-4828	156	20	the	the	DET
bibechana-4828	156	21	different	different	ADJ
bibechana-4828	156	22	planes	plane	NOUN
bibechana-4828	156	23	.	.	PUNCT
bibechana-4828	157	1	it	it	PRON
bibechana-4828	157	2	is	be	AUX
bibechana-4828	157	3	thought	think	VERB
bibechana-4828	157	4	that	that	SCONJ
bibechana-4828	157	5	all	all	DET
bibechana-4828	157	6	faces	face	VERB
bibechana-4828	157	7	that	that	PRON
bibechana-4828	157	8	are	be	AUX
bibechana-4828	157	9	rough	rough	ADJ
bibechana-4828	157	10	in	in	ADP
bibechana-4828	157	11	the	the	DET
bibechana-4828	157	12	atomic	atomic	ADJ
bibechana-4828	157	13	scale	scale	NOUN
bibechana-4828	157	14	etch	etch	NOUN
bibechana-4828	157	15	in	in	ADP
bibechana-4828	157	16	the	the	DET
bibechana-4828	157	17	same	same	ADJ
bibechana-4828	157	18	manner	manner	NOUN
bibechana-4828	157	19	.	.	PUNCT
bibechana-4828	158	1	this	this	PRON
bibechana-4828	158	2	is	be	AUX
bibechana-4828	158	3	supported	support	VERB
bibechana-4828	158	4	by	by	ADP
bibechana-4828	158	5	the	the	DET
bibechana-4828	158	6	afm	afm	PROPN
bibechana-4828	158	7	micrograph	micrograph	NOUN
bibechana-4828	158	8	representation	representation	NOUN
bibechana-4828	158	9	of	of	ADP
bibechana-4828	158	10	one	one	NUM
bibechana-4828	158	11	plane	plane	NOUN
bibechana-4828	158	12	viz	viz	NOUN
bibechana-4828	158	13	.	.	PUNCT
bibechana-4828	159	1	(	(	PUNCT
bibechana-4828	159	2	111	111	NUM
bibechana-4828	159	3	)	)	PUNCT
bibechana-4828	159	4	.	.	PUNCT
bibechana-4828	160	1	this	this	PRON
bibechana-4828	160	2	is	be	AUX
bibechana-4828	160	3	a	a	DET
bibechana-4828	160	4	characteristic	characteristic	ADJ
bibechana-4828	160	5	feature	feature	NOUN
bibechana-4828	160	6	of	of	ADP
bibechana-4828	160	7	rough	rough	ADJ
bibechana-4828	160	8	faces	face	NOUN
bibechana-4828	160	9	at	at	ADP
bibechana-4828	160	10	the	the	DET
bibechana-4828	160	11	atomic	atomic	ADJ
bibechana-4828	160	12	level	level	NOUN
bibechana-4828	160	13	when	when	SCONJ
bibechana-4828	160	14	etched	etch	VERB
bibechana-4828	160	15	with	with	ADP
bibechana-4828	160	16	an	an	DET
bibechana-4828	160	17	alkaline	alkaline	NOUN
bibechana-4828	160	18	solution	solution	NOUN
bibechana-4828	160	19	.	.	PUNCT
bibechana-4828	161	1	shobha	shobha	NOUN
bibechana-4828	161	2	kanta	kanta	PROPN
bibechana-4828	161	3	lamichhane	lamichhane	PROPN
bibechana-4828	161	4	/	/	SYM
bibechana-4828	161	5	bibechana	bibechana	PROPN
bibechana-4828	161	6	8	8	NUM
bibechana-4828	161	7	(	(	PUNCT
bibechana-4828	161	8	2012	2012	NUM
bibechana-4828	161	9	)	)	PUNCT
bibechana-4828	161	10	59	59	NUM
bibechana-4828	161	11	-	-	SYM
bibechana-4828	161	12	65	65	NUM
bibechana-4828	161	13	:	:	PUNCT
bibechana-4828	161	14	bmhss	bmhss	PROPN
bibechana-4828	161	15	,	,	PUNCT
bibechana-4828	161	16	p.65	p.65	X
bibechana-4828	161	17	fig.3	fig.3	PROPN
bibechana-4828	161	18	:	:	PUNCT
bibechana-4828	161	19	structure	structure	NOUN
bibechana-4828	161	20	of	of	ADP
bibechana-4828	161	21	(	(	PUNCT
bibechana-4828	161	22	111	111	NUM
bibechana-4828	161	23	)	)	PUNCT
bibechana-4828	161	24	silicon	silicon	NOUN
bibechana-4828	161	25	plane	plane	NOUN
bibechana-4828	161	26	as	as	SCONJ
bibechana-4828	161	27	seen	see	VERB
bibechana-4828	161	28	from	from	ADP
bibechana-4828	161	29	the	the	DET
bibechana-4828	161	30	top	top	NOUN
bibechana-4828	161	31	and	and	CCONJ
bibechana-4828	161	32	its	its	PRON
bibechana-4828	161	33	afm	afm	PROPN
bibechana-4828	161	34	micrograph	micrograph	NOUN
bibechana-4828	161	35	.	.	PUNCT
bibechana-4828	162	1	seidel	seidel	PROPN
bibechana-4828	162	2	et	et	PROPN
bibechana-4828	162	3	al	al	PROPN
bibechana-4828	163	1	[	[	X
bibechana-4828	163	2	6	6	NUM
bibechana-4828	163	3	]	]	PUNCT
bibechana-4828	163	4	has	have	AUX
bibechana-4828	163	5	carried	carry	VERB
bibechana-4828	163	6	out	out	ADP
bibechana-4828	163	7	precise	precise	ADJ
bibechana-4828	163	8	experiments	experiment	NOUN
bibechana-4828	163	9	to	to	PART
bibechana-4828	163	10	determine	determine	VERB
bibechana-4828	163	11	the	the	DET
bibechana-4828	163	12	values	value	NOUN
bibechana-4828	163	13	of	of	ADP
bibechana-4828	163	14	the	the	DET
bibechana-4828	163	15	er	er	INTJ
bibechana-4828	163	16	of	of	ADP
bibechana-4828	163	17	the	the	DET
bibechana-4828	163	18	three	three	NUM
bibechana-4828	163	19	silicon	silicon	NOUN
bibechana-4828	163	20	orientations	orientation	NOUN
bibechana-4828	163	21	(	(	PUNCT
bibechana-4828	163	22	100	100	NUM
bibechana-4828	163	23	)	)	PUNCT
bibechana-4828	163	24	,	,	PUNCT
bibechana-4828	163	25	(	(	PUNCT
bibechana-4828	163	26	110	110	NUM
bibechana-4828	163	27	)	)	PUNCT
bibechana-4828	163	28	and	and	CCONJ
bibechana-4828	163	29	(	(	PUNCT
bibechana-4828	163	30	111	111	NUM
bibechana-4828	163	31	)	)	PUNCT
bibechana-4828	163	32	.	.	PUNCT
bibechana-4828	164	1	in	in	ADP
bibechana-4828	164	2	their	their	PRON
bibechana-4828	164	3	experiments	experiment	NOUN
bibechana-4828	164	4	,	,	PUNCT
bibechana-4828	164	5	the	the	DET
bibechana-4828	164	6	concentration	concentration	NOUN
bibechana-4828	164	7	of	of	ADP
bibechana-4828	164	8	koh	koh	PROPN
bibechana-4828	164	9	was	be	AUX
bibechana-4828	164	10	also	also	ADV
bibechana-4828	164	11	modified	modify	VERB
bibechana-4828	164	12	.	.	PUNCT
bibechana-4828	165	1	the	the	DET
bibechana-4828	165	2	result	result	NOUN
bibechana-4828	165	3	shows	show	VERB
bibechana-4828	165	4	that	that	SCONJ
bibechana-4828	165	5	the	the	DET
bibechana-4828	165	6	anisotropic	anisotropic	NOUN
bibechana-4828	165	7	ratio	ratio	NOUN
bibechana-4828	165	8	(	(	PUNCT
bibechana-4828	165	9	110)/(100	110)/(100	NUM
bibechana-4828	165	10	)	)	PUNCT
bibechana-4828	165	11	has	have	VERB
bibechana-4828	165	12	a	a	DET
bibechana-4828	165	13	small	small	ADJ
bibechana-4828	165	14	dependence	dependence	NOUN
bibechana-4828	165	15	on	on	ADP
bibechana-4828	165	16	the	the	DET
bibechana-4828	165	17	concentrations	concentration	NOUN
bibechana-4828	165	18	(	(	PUNCT
bibechana-4828	165	19	from	from	ADP
bibechana-4828	165	20	10–60	10–60	NUM
bibechana-4828	165	21	%	%	NOUN
bibechana-4828	165	22	)	)	PUNCT
bibechana-4828	165	23	,	,	PUNCT
bibechana-4828	165	24	and	and	CCONJ
bibechana-4828	165	25	the	the	DET
bibechana-4828	165	26	value	value	NOUN
bibechana-4828	165	27	is	be	AUX
bibechana-4828	165	28	on	on	ADP
bibechana-4828	165	29	the	the	DET
bibechana-4828	165	30	order	order	NOUN
bibechana-4828	165	31	of	of	ADP
bibechana-4828	165	32	1.55	1.55	NUM
bibechana-4828	165	33	at	at	ADP
bibechana-4828	165	34	800c	800c	NUM
bibechana-4828	165	35	.	.	PUNCT
bibechana-4828	166	1	the	the	DET
bibechana-4828	166	2	macroscopic	macroscopic	ADJ
bibechana-4828	166	3	activation	activation	NOUN
bibechana-4828	166	4	energies	energy	NOUN
bibechana-4828	166	5	were	be	AUX
bibechana-4828	166	6	found	find	VERB
bibechana-4828	166	7	to	to	PART
bibechana-4828	166	8	be	be	AUX
bibechana-4828	166	9	similar	similar	ADJ
bibechana-4828	166	10	for	for	ADP
bibechana-4828	166	11	(	(	PUNCT
bibechana-4828	166	12	100	100	NUM
bibechana-4828	166	13	)	)	PUNCT
bibechana-4828	166	14	and	and	CCONJ
bibechana-4828	166	15	(	(	PUNCT
bibechana-4828	166	16	110	110	NUM
bibechana-4828	166	17	)	)	PUNCT
bibechana-4828	166	18	planes	plane	NOUN
bibechana-4828	167	1	[	[	X
bibechana-4828	167	2	16	16	NUM
bibechana-4828	167	3	]	]	PUNCT
bibechana-4828	167	4	,	,	PUNCT
bibechana-4828	167	5	being	be	AUX
bibechana-4828	167	6	approximately	approximately	ADV
bibechana-4828	167	7	0.6	0.6	NUM
bibechana-4828	167	8	ev	ev	NOUN
bibechana-4828	167	9	.	.	PUNCT
bibechana-4828	168	1	we	we	PRON
bibechana-4828	168	2	found	find	VERB
bibechana-4828	168	3	an	an	DET
bibechana-4828	168	4	anisotropic	anisotropic	NOUN
bibechana-4828	168	5	ratio	ratio	NOUN
bibechana-4828	168	6	(	(	PUNCT
bibechana-4828	168	7	110)/(100	110)/(100	NUM
bibechana-4828	168	8	)	)	PUNCT
bibechana-4828	168	9	of	of	ADP
bibechana-4828	168	10	the	the	DET
bibechana-4828	168	11	same	same	ADJ
bibechana-4828	168	12	order	order	NOUN
bibechana-4828	168	13	as	as	ADP
bibechana-4828	168	14	above	above	ADV
bibechana-4828	168	15	(	(	PUNCT
bibechana-4828	168	16	1.5	1.5	NUM
bibechana-4828	168	17	)	)	PUNCT
bibechana-4828	168	18	.	.	PUNCT
bibechana-4828	169	1	for	for	ADP
bibechana-4828	169	2	activation	activation	NOUN
bibechana-4828	169	3	energies	energy	NOUN
bibechana-4828	169	4	,	,	PUNCT
bibechana-4828	169	5	we	we	PRON
bibechana-4828	169	6	found	find	VERB
bibechana-4828	169	7	approximately	approximately	ADV
bibechana-4828	169	8	0.6	0.6	NUM
bibechana-4828	169	9	ev	ev	INTJ
bibechana-4828	169	10	for	for	ADP
bibechana-4828	169	11	(	(	PUNCT
bibechana-4828	169	12	100	100	NUM
bibechana-4828	169	13	)	)	PUNCT
bibechana-4828	169	14	and	and	CCONJ
bibechana-4828	169	15	(	(	PUNCT
bibechana-4828	169	16	110	110	NUM
bibechana-4828	169	17	)	)	PUNCT
bibechana-4828	169	18	planes	plane	NOUN
bibechana-4828	169	19	.	.	PUNCT
bibechana-4828	170	1	4	4	X
bibechana-4828	170	2	.	.	X
bibechana-4828	170	3	conclusion	conclusion	VERB
bibechana-4828	170	4	the	the	DET
bibechana-4828	170	5	etching	etch	VERB
bibechana-4828	170	6	mechanism	mechanism	NOUN
bibechana-4828	170	7	is	be	AUX
bibechana-4828	170	8	‘	'	PUNCT
bibechana-4828	170	9	layer	layer	NOUN
bibechana-4828	170	10	-	-	PUNCT
bibechana-4828	170	11	by	by	ADP
bibechana-4828	170	12	-	-	PUNCT
bibechana-4828	170	13	layer	layer	NOUN
bibechana-4828	170	14	’	'	PUNCT
bibechana-4828	170	15	removal	removal	NOUN
bibechana-4828	170	16	.	.	PUNCT
bibechana-4828	171	1	this	this	DET
bibechana-4828	171	2	mechanism	mechanism	NOUN
bibechana-4828	171	3	leads	lead	VERB
bibechana-4828	171	4	to	to	ADP
bibechana-4828	171	5	a	a	DET
bibechana-4828	171	6	particular	particular	ADJ
bibechana-4828	171	7	evolution	evolution	NOUN
bibechana-4828	171	8	of	of	ADP
bibechana-4828	171	9	the	the	DET
bibechana-4828	171	10	roughness	roughness	NOUN
bibechana-4828	171	11	which	which	PRON
bibechana-4828	171	12	shows	show	VERB
bibechana-4828	171	13	an	an	DET
bibechana-4828	171	14	alternation	alternation	NOUN
bibechana-4828	171	15	of	of	ADP
bibechana-4828	171	16	peaks	peak	NOUN
bibechana-4828	171	17	.	.	PUNCT
bibechana-4828	172	1	anisotropic	anisotropic	NOUN
bibechana-4828	172	2	etching	etch	VERB
bibechana-4828	172	3	of	of	ADP
bibechana-4828	172	4	silicon	silicon	NOUN
bibechana-4828	172	5	with	with	ADP
bibechana-4828	172	6	koh	koh	PROPN
bibechana-4828	172	7	is	be	AUX
bibechana-4828	172	8	a	a	DET
bibechana-4828	172	9	well	well	ADV
bibechana-4828	172	10	-	-	PUNCT
bibechana-4828	172	11	known	know	VERB
bibechana-4828	172	12	method	method	NOUN
bibechana-4828	172	13	of	of	ADP
bibechana-4828	172	14	forming	form	VERB
bibechana-4828	172	15	grooves	groove	NOUN
bibechana-4828	172	16	in	in	ADP
bibechana-4828	172	17	the	the	DET
bibechana-4828	172	18	silicon	silicon	NOUN
bibechana-4828	172	19	-	-	PUNCT
bibechana-4828	172	20	surface	surface	NOUN
bibechana-4828	172	21	.	.	PUNCT
bibechana-4828	173	1	etching	etch	VERB
bibechana-4828	173	2	of	of	ADP
bibechana-4828	173	3	(	(	PUNCT
bibechana-4828	173	4	100	100	NUM
bibechana-4828	173	5	)	)	PUNCT
bibechana-4828	173	6	silicon	silicon	NOUN
bibechana-4828	173	7	on	on	ADP
bibechana-4828	173	8	silicon	silicon	NOUN
bibechana-4828	173	9	on	on	ADP
bibechana-4828	173	10	insulator	insulator	NOUN
bibechana-4828	173	11	wafers	wafer	NOUN
bibechana-4828	173	12	was	be	AUX
bibechana-4828	173	13	carried	carry	VERB
bibechana-4828	173	14	out	out	ADP
bibechana-4828	173	15	over	over	ADP
bibechana-4828	173	16	a	a	DET
bibechana-4828	173	17	wide	wide	ADJ
bibechana-4828	173	18	range	range	NOUN
bibechana-4828	173	19	of	of	ADP
bibechana-4828	173	20	temperatures	temperature	NOUN
bibechana-4828	173	21	and	and	CCONJ
bibechana-4828	173	22	concentrations	concentration	NOUN
bibechana-4828	173	23	.	.	PUNCT
bibechana-4828	174	1	using	use	VERB
bibechana-4828	174	2	statistical	statistical	ADJ
bibechana-4828	174	3	methods	method	NOUN
bibechana-4828	174	4	,	,	PUNCT
bibechana-4828	174	5	we	we	PRON
bibechana-4828	174	6	show	show	VERB
bibechana-4828	174	7	that	that	SCONJ
bibechana-4828	174	8	the	the	DET
bibechana-4828	174	9	factors	factor	NOUN
bibechana-4828	174	10	important	important	ADJ
bibechana-4828	174	11	in	in	ADP
bibechana-4828	174	12	the	the	DET
bibechana-4828	174	13	silicon	silicon	NOUN
bibechana-4828	174	14	er	er	INTJ
bibechana-4828	174	15	are	be	AUX
bibechana-4828	174	16	reaction	reaction	NOUN
bibechana-4828	174	17	temperature	temperature	NOUN
bibechana-4828	174	18	,	,	PUNCT
bibechana-4828	174	19	koh	koh	PROPN
bibechana-4828	174	20	concentration	concentration	NOUN
bibechana-4828	174	21	,	,	PUNCT
bibechana-4828	174	22	and	and	CCONJ
bibechana-4828	174	23	interaction	interaction	NOUN
bibechana-4828	174	24	between	between	ADP
bibechana-4828	174	25	them	they	PRON
bibechana-4828	174	26	.	.	PUNCT
bibechana-4828	175	1	the	the	DET
bibechana-4828	175	2	activation	activation	NOUN
bibechana-4828	175	3	energy	energy	NOUN
bibechana-4828	175	4	belongs	belong	VERB
bibechana-4828	175	5	to	to	ADP
bibechana-4828	175	6	etching	etch	VERB
bibechana-4828	175	7	at	at	ADP
bibechana-4828	175	8	different	different	ADJ
bibechana-4828	175	9	koh	koh	PROPN
bibechana-4828	175	10	concentration	concentration	NOUN
bibechana-4828	175	11	was	be	AUX
bibechana-4828	175	12	calculated	calculate	VERB
bibechana-4828	175	13	from	from	ADP
bibechana-4828	175	14	arrhenius	arrhenius	PROPN
bibechana-4828	175	15	plots	plot	NOUN
bibechana-4828	175	16	.	.	PUNCT
bibechana-4828	176	1	in	in	ADP
bibechana-4828	176	2	addition	addition	NOUN
bibechana-4828	176	3	,	,	PUNCT
bibechana-4828	176	4	in	in	ADP
bibechana-4828	176	5	this	this	DET
bibechana-4828	176	6	work	work	NOUN
bibechana-4828	176	7	we	we	PRON
bibechana-4828	176	8	report	report	VERB
bibechana-4828	176	9	a	a	DET
bibechana-4828	176	10	qualitative	qualitative	ADJ
bibechana-4828	176	11	study	study	NOUN
bibechana-4828	176	12	of	of	ADP
bibechana-4828	176	13	the	the	DET
bibechana-4828	176	14	surface	surface	NOUN
bibechana-4828	176	15	roughness	roughness	NOUN
bibechana-4828	176	16	formed	form	VERB
bibechana-4828	176	17	in	in	ADP
bibechana-4828	176	18	koh	koh	PROPN
bibechana-4828	176	19	etching	etch	VERB
bibechana-4828	176	20	.	.	PUNCT
bibechana-4828	177	1	the	the	DET
bibechana-4828	177	2	smoothness	smoothness	ADJ
bibechana-4828	177	3	increases	increase	VERB
bibechana-4828	177	4	with	with	ADP
bibechana-4828	177	5	temperature	temperature	NOUN
bibechana-4828	177	6	to	to	ADP
bibechana-4828	177	7	a	a	DET
bibechana-4828	177	8	critical	critical	ADJ
bibechana-4828	177	9	point	point	NOUN
bibechana-4828	177	10	and	and	CCONJ
bibechana-4828	177	11	then	then	ADV
bibechana-4828	177	12	decreases	decrease	VERB
bibechana-4828	177	13	at	at	ADP
bibechana-4828	177	14	very	very	ADV
bibechana-4828	177	15	high	high	ADJ
bibechana-4828	177	16	temperature	temperature	NOUN
bibechana-4828	177	17	and	and	CCONJ
bibechana-4828	177	18	concentration	concentration	NOUN
bibechana-4828	177	19	.	.	PUNCT
bibechana-4828	178	1	results	result	NOUN
bibechana-4828	178	2	presented	present	VERB
bibechana-4828	178	3	here	here	ADV
bibechana-4828	178	4	are	be	AUX
bibechana-4828	178	5	temperature	temperature	NOUN
bibechana-4828	178	6	dependent	dependent	ADJ
bibechana-4828	178	7	er	er	INTJ
bibechana-4828	178	8	along	along	ADP
bibechana-4828	178	9	the	the	DET
bibechana-4828	178	10	crystallographic	crystallographic	ADJ
bibechana-4828	178	11	orientations	orientation	NOUN
bibechana-4828	178	12	.	.	PUNCT
bibechana-4828	179	1	based	base	VERB
bibechana-4828	179	2	on	on	ADP
bibechana-4828	179	3	this	this	DET
bibechana-4828	179	4	work	work	NOUN
bibechana-4828	179	5	,	,	PUNCT
bibechana-4828	179	6	temperature	temperature	NOUN
bibechana-4828	179	7	is	be	AUX
bibechana-4828	179	8	a	a	DET
bibechana-4828	179	9	crucial	crucial	ADJ
bibechana-4828	179	10	factor	factor	NOUN
bibechana-4828	179	11	,	,	PUNCT
bibechana-4828	179	12	which	which	PRON
bibechana-4828	179	13	control	control	NOUN
bibechana-4828	179	14	er	er	INTJ
bibechana-4828	179	15	.	.	PUNCT
bibechana-4828	179	16	activation	activation	NOUN
bibechana-4828	179	17	and	and	CCONJ
bibechana-4828	179	18	cohesive	cohesive	ADJ
bibechana-4828	179	19	energies	energy	NOUN
bibechana-4828	179	20	along	along	ADP
bibechana-4828	179	21	the	the	DET
bibechana-4828	179	22	crystallographic	crystallographic	ADJ
bibechana-4828	179	23	planes	plane	NOUN
bibechana-4828	179	24	are	be	AUX
bibechana-4828	179	25	thus	thus	ADV
bibechana-4828	179	26	microscopic	microscopic	ADJ
bibechana-4828	179	27	quantities	quantity	NOUN
bibechana-4828	179	28	that	that	PRON
bibechana-4828	179	29	determine	determine	VERB
bibechana-4828	179	30	er	er	INTJ
bibechana-4828	179	31	.	.	PUNCT
bibechana-4828	180	1	er	er	INTJ
bibechana-4828	180	2	is	be	AUX
bibechana-4828	180	3	slow	slow	ADJ
bibechana-4828	180	4	for	for	ADP
bibechana-4828	180	5	(	(	PUNCT
bibechana-4828	180	6	111	111	NUM
bibechana-4828	180	7	)	)	PUNCT
bibechana-4828	180	8	face	face	NOUN
bibechana-4828	180	9	and	and	CCONJ
bibechana-4828	180	10	fast	fast	VERB
bibechana-4828	180	11	in	in	ADP
bibechana-4828	180	12	(	(	PUNCT
bibechana-4828	180	13	110	110	NUM
bibechana-4828	180	14	)	)	PUNCT
bibechana-4828	180	15	.	.	PUNCT
bibechana-4828	181	1	strong	strong	ADJ
bibechana-4828	181	2	er	er	INTJ
bibechana-4828	181	3	anisotropy	anisotropy	NOUN
bibechana-4828	181	4	allows	allow	VERB
bibechana-4828	181	5	us	we	PRON
bibechana-4828	181	6	a	a	DET
bibechana-4828	181	7	precious	precious	ADJ
bibechana-4828	181	8	control	control	NOUN
bibechana-4828	181	9	of	of	ADP
bibechana-4828	181	10	lateral	lateral	ADJ
bibechana-4828	181	11	dimension	dimension	NOUN
bibechana-4828	181	12	of	of	ADP
bibechana-4828	181	13	the	the	DET
bibechana-4828	181	14	microstructure	microstructure	NOUN
bibechana-4828	181	15	bound	bind	VERB
bibechana-4828	181	16	by	by	ADP
bibechana-4828	181	17	the	the	DET
bibechana-4828	181	18	(	(	PUNCT
bibechana-4828	181	19	111	111	NUM
bibechana-4828	181	20	)	)	PUNCT
bibechana-4828	181	21	surface	surface	NOUN
bibechana-4828	181	22	and	and	CCONJ
bibechana-4828	181	23	activation	activation	NOUN
bibechana-4828	181	24	energy	energy	NOUN
bibechana-4828	181	25	depends	depend	VERB
bibechana-4828	181	26	on	on	ADP
bibechana-4828	181	27	the	the	DET
bibechana-4828	181	28	step	step	NOUN
bibechana-4828	181	29	-	-	PUNCT
bibechana-4828	181	30	free	free	ADJ
bibechana-4828	181	31	energy	energy	NOUN
bibechana-4828	181	32	and	and	CCONJ
bibechana-4828	181	33	undersaturation	undersaturation	NOUN
bibechana-4828	181	34	.	.	PUNCT
bibechana-4828	182	1	references	reference	NOUN
bibechana-4828	182	2	[	[	X
bibechana-4828	182	3	1	1	NUM
bibechana-4828	182	4	]	]	PUNCT
bibechana-4828	182	5	k.	k.	PROPN
bibechana-4828	182	6	e.	e.	PROPN
bibechana-4828	182	7	petersen	petersen	PROPN
bibechana-4828	182	8	ieee	ieee	PROPN
bibechana-4828	182	9	proc	proc	PROPN
bibechana-4828	182	10	.	.	PUNCT
bibechana-4828	183	1	70	70	NUM
bibechana-4828	183	2	(	(	PUNCT
bibechana-4828	183	3	1982	1982	NUM
bibechana-4828	183	4	)	)	PUNCT
bibechana-4828	183	5	420	420	NUM
bibechana-4828	183	6	.	.	PUNCT
bibechana-4828	184	1	[	[	X
bibechana-4828	184	2	2	2	X
bibechana-4828	184	3	]	]	X
bibechana-4828	184	4	d.	d.	PROPN
bibechana-4828	184	5	l.	l.	PROPN
bibechana-4828	184	6	kendall	kendall	PROPN
bibechana-4828	184	7	,	,	PUNCT
bibechana-4828	184	8	annual	annual	ADJ
bibechana-4828	184	9	rev	rev	X
bibechana-4828	184	10	.	.	PROPN
bibechana-4828	184	11	mater	mater	PROPN
bibechana-4828	184	12	.	.	PUNCT
bibechana-4828	185	1	sci	sci	PROPN
bibechana-4828	185	2	.	.	PUNCT
bibechana-4828	186	1	vol	vol	NOUN
bibechana-4828	186	2	9	9	NUM
bibechana-4828	186	3	,	,	PUNCT
bibechana-4828	186	4	ed	ed	NOUN
bibechana-4828	186	5	r	r	NOUN
bibechana-4828	186	6	a	a	DET
bibechana-4828	186	7	huggins	huggins	PROPN
bibechana-4828	186	8	(	(	PUNCT
bibechana-4828	186	9	1979	1979	NUM
bibechana-4828	186	10	)	)	PUNCT
bibechana-4828	186	11	373	373	NUM
bibechana-4828	186	12	.	.	PUNCT
bibechana-4828	187	1	[	[	X
bibechana-4828	187	2	3	3	X
bibechana-4828	187	3	]	]	X
bibechana-4828	187	4	h.	h.	NOUN
bibechana-4828	187	5	namatsu	namatsu	PROPN
bibechana-4828	187	6	,	,	PUNCT
bibechana-4828	187	7	m.	m.	NOUN
bibechana-4828	187	8	nagase	nagase	PROPN
bibechana-4828	187	9	,	,	PUNCT
bibechana-4828	187	10	k.	k.	PROPN
bibechana-4828	187	11	kurihara	kurihara	PROPN
bibechana-4828	187	12	,	,	PUNCT
bibechana-4828	187	13	k.	k.	PROPN
bibechana-4828	187	14	iwadate	iwadate	PROPN
bibechana-4828	187	15	and	and	CCONJ
bibechana-4828	187	16	k.murase	k.murase	NOUN
bibechana-4828	187	17	,	,	PUNCT
bibechana-4828	187	18	microelectron	microelectron	PROPN
bibechana-4828	187	19	.	.	PUNCT
bibechana-4828	188	1	eng	eng	PROPN
bibechana-4828	188	2	.	.	PROPN
bibechana-4828	188	3	27	27	NUM
bibechana-4828	188	4	(	(	PUNCT
bibechana-4828	188	5	1995	1995	NUM
bibechana-4828	188	6	)	)	PUNCT
bibechana-4828	188	7	7	7	NUM
bibechana-4828	188	8	.	.	X
bibechana-4828	188	9	shobha	shobha	PROPN
bibechana-4828	188	10	kanta	kanta	PROPN
bibechana-4828	188	11	lamichhane	lamichhane	PROPN
bibechana-4828	188	12	/	/	SYM
bibechana-4828	188	13	bibechana	bibechana	PROPN
bibechana-4828	188	14	8	8	NUM
bibechana-4828	188	15	(	(	PUNCT
bibechana-4828	188	16	2012	2012	NUM
bibechana-4828	188	17	)	)	PUNCT
bibechana-4828	188	18	59	59	NUM
bibechana-4828	188	19	-	-	SYM
bibechana-4828	188	20	65	65	NUM
bibechana-4828	188	21	:	:	PUNCT
bibechana-4828	188	22	bmhss	bmhss	PROPN
bibechana-4828	188	23	,	,	PUNCT
bibechana-4828	188	24	p.66	p.66	X
bibechana-4828	188	25	[	[	X
bibechana-4828	188	26	4	4	X
bibechana-4828	188	27	]	]	X
bibechana-4828	188	28	o.	o.	PROPN
bibechana-4828	188	29	j.	j.	PROPN
bibechana-4828	188	30	glembocki	glembocki	PROPN
bibechana-4828	188	31	,	,	PUNCT
bibechana-4828	188	32	e	e	PROPN
bibechana-4828	188	33	d	d	NOUN
bibechana-4828	188	34	palik	palik	NOUN
bibechana-4828	188	35	,	,	PUNCT
bibechana-4828	188	36	g	g	PROPN
bibechana-4828	188	37	r	r	PROPN
bibechana-4828	188	38	de	de	X
bibechana-4828	188	39	guel	guel	NOUN
bibechana-4828	188	40	and	and	CCONJ
bibechana-4828	188	41	d	d	PROPN
bibechana-4828	188	42	l	l	PROPN
bibechana-4828	188	43	kendall	kendall	PROPN
bibechana-4828	188	44	,	,	PUNCT
bibechana-4828	188	45	j.	j.	PROPN
bibechana-4828	188	46	electrochem	electrochem	PROPN
bibechana-4828	188	47	.	.	PUNCT
bibechana-4828	189	1	soc	soc	PROPN
bibechana-4828	189	2	.	.	PUNCT
bibechana-4828	190	1	138	138	NUM
bibechana-4828	190	2	(	(	PUNCT
bibechana-4828	190	3	1991	1991	NUM
bibechana-4828	190	4	)	)	PUNCT
bibechana-4828	190	5	1055	1055	NUM
bibechana-4828	190	6	.	.	PUNCT
bibechana-4828	191	1	[	[	X
bibechana-4828	191	2	5	5	X
bibechana-4828	191	3	]	]	PUNCT
bibechana-4828	191	4	e.	e.	PROPN
bibechana-4828	191	5	d.	d.	PROPN
bibechana-4828	191	6	palik	palik	PROPN
bibechana-4828	191	7	,	,	PUNCT
bibechana-4828	191	8	v	v	NOUN
bibechana-4828	191	9	m	m	NOUN
bibechana-4828	191	10	bermudez	bermudez	PROPN
bibechana-4828	191	11	and	and	CCONJ
bibechana-4828	191	12	o	o	PROPN
bibechana-4828	191	13	j	j	PROPN
bibechana-4828	191	14	glembocki	glembocki	PROPN
bibechana-4828	191	15	,	,	PUNCT
bibechana-4828	191	16	j.	j.	PROPN
bibechana-4828	191	17	electrochem	electrochem	PROPN
bibechana-4828	191	18	.	.	PUNCT
bibechana-4828	192	1	soc	soc	PROPN
bibechana-4828	192	2	.	.	PUNCT
bibechana-4828	193	1	132	132	NUM
bibechana-4828	193	2	(	(	PUNCT
bibechana-4828	193	3	1985	1985	NUM
bibechana-4828	193	4	)	)	PUNCT
bibechana-4828	193	5	871	871	NUM
bibechana-4828	193	6	.	.	PUNCT
bibechana-4828	194	1	[	[	X
bibechana-4828	194	2	6	6	NUM
bibechana-4828	194	3	]	]	PUNCT
bibechana-4828	194	4	h.	h.	PROPN
bibechana-4828	194	5	seidel	seidel	PROPN
bibechana-4828	194	6	,	,	PUNCT
bibechana-4828	194	7	l.	l.	PROPN
bibechana-4828	194	8	csepregi	csepregi	PROPN
bibechana-4828	194	9	,	,	PUNCT
bibechana-4828	194	10	a	a	DET
bibechana-4828	194	11	heuberger	heuberger	NOUN
bibechana-4828	194	12	and	and	CCONJ
bibechana-4828	194	13	h	h	NOUN
bibechana-4828	194	14	baumgartel	baumgartel	NOUN
bibechana-4828	194	15	,	,	PUNCT
bibechana-4828	194	16	j.	j.	PROPN
bibechana-4828	194	17	electrochem	electrochem	PROPN
bibechana-4828	194	18	.	.	PUNCT
bibechana-4828	195	1	soc	soc	NOUN
bibechana-4828	195	2	137	137	NUM
bibechana-4828	195	3	(	(	PUNCT
bibechana-4828	195	4	1990	1990	NUM
bibechana-4828	195	5	)	)	PUNCT
bibechana-4828	195	6	3612	3612	NUM
bibechana-4828	195	7	.	.	PUNCT
bibechana-4828	196	1	[	[	X
bibechana-4828	196	2	7	7	X
bibechana-4828	196	3	]	]	X
bibechana-4828	196	4	e.	e.	PROPN
bibechana-4828	196	5	vazonyi	vazonyi	PROPN
bibechana-4828	196	6	and	and	CCONJ
bibechana-4828	196	7	t.	t.	PROPN
bibechana-4828	196	8	szkufcik	szkufcik	PROPN
bibechana-4828	196	9	,	,	PUNCT
bibechana-4828	196	10	journal	journal	NOUN
bibechana-4828	196	11	of	of	ADP
bibechana-4828	196	12	micromechanics	micromechanic	NOUN
bibechana-4828	196	13	and	and	CCONJ
bibechana-4828	196	14	microengineering	microengineere	VERB
bibechana-4828	196	15	13	13	NUM
bibechana-4828	196	16	(	(	PUNCT
bibechana-4828	196	17	2003	2003	NUM
bibechana-4828	196	18	)	)	PUNCT
bibechana-4828	196	19	165	165	NUM
bibechana-4828	196	20	.	.	PUNCT
bibechana-4828	197	1	[	[	X
bibechana-4828	197	2	8	8	NUM
bibechana-4828	197	3	]	]	X
bibechana-4828	197	4	n.	n.	PROPN
bibechana-4828	197	5	p.	p.	PROPN
bibechana-4828	197	6	krivorotov	krivorotov	NOUN
bibechana-4828	197	7	,	,	PUNCT
bibechana-4828	197	8	y.	y.	PROPN
bibechana-4828	197	9	g.	g.	PROPN
bibechana-4828	197	10	svinolupov	svinolupov	PROPN
bibechana-4828	197	11	,	,	PUNCT
bibechana-4828	197	12	t.	t.	PROPN
bibechana-4828	197	13	i	i	PROPN
bibechana-4828	197	14	izaak	izaak	PROPN
bibechana-4828	197	15	,	,	PUNCT
bibechana-4828	197	16	v.	v.	ADP
bibechana-4828	197	17	v.	v.	ADP
bibechana-4828	197	18	bychkov	bychkov	NOUN
bibechana-4828	197	19	,	,	PUNCT
bibechana-4828	197	20	sensors	sensor	NOUN
bibechana-4828	197	21	and	and	CCONJ
bibechana-4828	197	22	actuatiors	actuatior	NOUN
bibechana-4828	197	23	a	a	DET
bibechana-4828	197	24	113(2004	113(2004	NUM
bibechana-4828	197	25	)	)	PUNCT
bibechana-4828	197	26	350	350	NUM
bibechana-4828	197	27	.	.	PUNCT
bibechana-4828	198	1	[	[	X
bibechana-4828	198	2	9	9	NUM
bibechana-4828	198	3	]	]	SYM
bibechana-4828	198	4	k	k	X
bibechana-4828	198	5	..	..	PUNCT
bibechana-4828	198	6	mylvaganam	mylvaganam	PROPN
bibechana-4828	198	7	and	and	CCONJ
bibechana-4828	198	8	c.	c.	PROPN
bibechana-4828	198	9	l.	l.	PROPN
bibechana-4828	198	10	zhang	zhang	PROPN
bibechana-4828	198	11	,	,	PUNCT
bibechana-4828	198	12	key	key	ADJ
bibechana-4828	198	13	engineering	engineering	NOUN
bibechana-4828	198	14	materials	material	NOUN
bibechana-4828	198	15	233	233	NUM
bibechana-4828	198	16	(	(	PUNCT
bibechana-4828	198	17	2003	2003	NUM
bibechana-4828	198	18	)	)	PUNCT
bibechana-4828	198	19	615	615	NUM
bibechana-4828	198	20	.	.	PUNCT
bibechana-4828	199	1	[	[	X
bibechana-4828	199	2	10	10	NUM
bibechana-4828	199	3	]	]	X
bibechana-4828	199	4	p.	p.	NOUN
bibechana-4828	199	5	sutter	sutter	PROPN
bibechana-4828	199	6	,	,	PUNCT
bibechana-4828	199	7	e.	e.	PROPN
bibechana-4828	199	8	sutter	sutter	PROPN
bibechana-4828	199	9	and	and	CCONJ
bibechana-4828	199	10	m.	m.	NOUN
bibechana-4828	199	11	g.	g.	PROPN
bibechana-4828	199	12	lagally	lagally	ADV
bibechana-4828	199	13	,	,	PUNCT
bibechana-4828	199	14	surface	surface	NOUN
bibechana-4828	199	15	science	science	NOUN
bibechana-4828	199	16	30	30	NUM
bibechana-4828	199	17	(	(	PUNCT
bibechana-4828	199	18	2003)1	2003)1	NUM
bibechana-4828	199	19	.	.	PUNCT
bibechana-4828	200	1	[	[	X
bibechana-4828	200	2	11	11	NUM
bibechana-4828	200	3	]	]	PUNCT
bibechana-4828	200	4	p.	p.	NOUN
bibechana-4828	200	5	waish	waish	PROPN
bibechana-4828	200	6	,	,	PUNCT
bibechana-4828	200	7	r.	r.	PROPN
bibechana-4828	200	8	omeitchenko	omeitchenko	PROPN
bibechana-4828	200	9	,	,	PUNCT
bibechana-4828	200	10	r.	r.	PROPN
bibechana-4828	200	11	k.	k.	PROPN
bibechana-4828	200	12	kalla	kalla	PROPN
bibechana-4828	200	13	,	,	PUNCT
bibechana-4828	200	14	a.	a.	PROPN
bibechana-4828	200	15	nakano	nakano	PROPN
bibechana-4828	200	16	and	and	CCONJ
bibechana-4828	200	17	p.	p.	PROPN
bibechana-4828	200	18	vashishta	vashishta	PROPN
bibechana-4828	200	19	,	,	PUNCT
bibechana-4828	200	20	applied	apply	VERB
bibechana-4828	200	21	physics	physics	NOUN
bibechana-4828	200	22	letters	letter	NOUN
bibechana-4828	200	23	82	82	NUM
bibechana-4828	200	24	(	(	PUNCT
bibechana-4828	200	25	2003	2003	NUM
bibechana-4828	200	26	)	)	PUNCT
bibechana-4828	200	27	118	118	NUM
bibechana-4828	200	28	.	.	PUNCT
bibechana-4828	201	1	[	[	X
bibechana-4828	201	2	12	12	NUM
bibechana-4828	201	3	]	]	PUNCT
bibechana-4828	201	4	x.	x.	PROPN
bibechana-4828	201	5	yan	yan	PROPN
bibechana-4828	201	6	,	,	PUNCT
bibechana-4828	201	7	t.	t.	PROPN
bibechana-4828	201	8	xu	xu	PROPN
bibechana-4828	201	9	,	,	PUNCT
bibechana-4828	201	10	g.	g.	PROPN
bibechana-4828	201	11	chen	chen	PROPN
bibechana-4828	201	12	,	,	PUNCT
bibechana-4828	201	13	s.	s.	PROPN
bibechana-4828	201	14	yang	yang	PROPN
bibechana-4828	201	15	,	,	PUNCT
bibechana-4828	201	16	and	and	CCONJ
bibechana-4828	201	17	huiwenliu	huiwenliu	PROPN
bibechana-4828	201	18	,	,	PUNCT
bibechana-4828	201	19	journal	journal	NOUN
bibechana-4828	201	20	of	of	ADP
bibechana-4828	201	21	physics	physics	PROPN
bibechana-4828	202	1	d	d	PROPN
bibechana-4828	202	2	:	:	PUNCT
bibechana-4828	202	3	applied	applied	ADJ
bibechana-4828	202	4	physics	physics	NOUN
bibechana-4828	202	5	37	37	NUM
bibechana-4828	202	6	(	(	PUNCT
bibechana-4828	202	7	2004	2004	NUM
bibechana-4828	202	8	)	)	PUNCT
bibechana-4828	202	9	907	907	NUM
bibechana-4828	202	10	.	.	PUNCT
bibechana-4828	203	1	[	[	X
bibechana-4828	203	2	13	13	NUM
bibechana-4828	203	3	]	]	PUNCT
bibechana-4828	203	4	p.	p.	NOUN
bibechana-4828	203	5	j.french	j.french	NOUN
bibechana-4828	203	6	and	and	CCONJ
bibechana-4828	203	7	a.	a.	PROPN
bibechana-4828	203	8	g.	g.	PROPN
bibechana-4828	203	9	r.	r.	PROPN
bibechana-4828	203	10	evans	evans	PROPN
bibechana-4828	203	11	,	,	PUNCT
bibechana-4828	203	12	solid	solid	ADJ
bibechana-4828	203	13	state	state	NOUN
bibechana-4828	203	14	electronics	electronic	NOUN
bibechana-4828	203	15	32	32	NUM
bibechana-4828	203	16	(	(	PUNCT
bibechana-4828	203	17	1989	1989	NUM
bibechana-4828	203	18	)	)	PUNCT
bibechana-4828	203	19	1	1	NUM
bibechana-4828	203	20	.	.	PUNCT
bibechana-4828	204	1	[	[	X
bibechana-4828	204	2	14	14	NUM
bibechana-4828	204	3	]	]	PUNCT
bibechana-4828	204	4	p.	p.	NOUN
bibechana-4828	204	5	j	j	PROPN
bibechana-4828	204	6	french	french	PROPN
bibechana-4828	204	7	.	.	PUNCT
bibechana-4828	205	1	and	and	CCONJ
bibechana-4828	205	2	a.g.r	a.g.r	PROPN
bibechana-4828	205	3	evans	evans	PROPN
bibechana-4828	205	4	,	,	PUNCT
bibechana-4828	205	5	journal	journal	NOUN
bibechana-4828	205	6	of	of	ADP
bibechana-4828	205	7	physics	physics	PROPN
bibechana-4828	205	8	e	e	NOUN
bibechana-4828	205	9	:	:	PUNCT
bibechana-4828	205	10	scientific	scientific	ADJ
bibechana-4828	205	11	instruments	instrument	NOUN
bibechana-4828	205	12	19	19	NUM
bibechana-4828	205	13	(	(	PUNCT
bibechana-4828	205	14	1986	1986	NUM
bibechana-4828	205	15	)	)	PUNCT
bibechana-4828	205	16	1055	1055	NUM
bibechana-4828	205	17	.	.	PUNCT
bibechana-4828	206	1	[	[	X
bibechana-4828	206	2	15	15	NUM
bibechana-4828	206	3	]	]	X
bibechana-4828	206	4	j.	j.	PROPN
bibechana-4828	206	5	duck	duck	PROPN
bibechana-4828	206	6	lee	lee	PROPN
bibechana-4828	206	7	,	,	PUNCT
bibechana-4828	206	8	b.	b.	PROPN
bibechana-4828	206	9	chang	chang	PROPN
bibechana-4828	206	10	shim	shim	PROPN
bibechana-4828	206	11	,	,	PUNCT
bibechana-4828	206	12	h.	h.	PROPN
bibechana-4828	206	13	soo	soo	PROPN
bibechana-4828	206	14	and	and	CCONJ
bibechana-4828	206	15	b.	b.	PROPN
bibechana-4828	206	16	gook	gook	PROPN
bibechana-4828	206	17	,	,	PUNCT
bibechana-4828	206	18	electron	electron	NOUN
bibechana-4828	206	19	device	device	NOUN
bibechana-4828	206	20	letters	letter	NOUN
bibechana-4828	206	21	20	20	NUM
bibechana-4828	206	22	(	(	PUNCT
bibechana-4828	206	23	1999	1999	NUM
bibechana-4828	206	24	)	)	PUNCT
bibechana-4828	206	25	215	215	NUM
bibechana-4828	206	26	.	.	PUNCT
bibechana-4828	207	1	[	[	X
bibechana-4828	207	2	16	16	NUM
bibechana-4828	207	3	]	]	PUNCT
bibechana-4828	207	4	k.	k.	PROPN
bibechana-4828	207	5	e.	e.	PROPN
bibechana-4828	207	6	bean	bean	PROPN
bibechana-4828	207	7	and	and	CCONJ
bibechana-4828	207	8	w.	w.	PROPN
bibechana-4828	207	9	r.	r.	PROPN
bibechana-4828	207	10	runyan	runyan	PROPN
bibechana-4828	207	11	,	,	PUNCT
bibechana-4828	207	12	semiconductor	semiconductor	NOUN
bibechana-4828	207	13	integrated	integrate	VERB
bibechana-4828	207	14	circuit	circuit	NOUN
bibechana-4828	207	15	processing	processing	NOUN
bibechana-4828	207	16	technology	technology	NOUN
bibechana-4828	207	17	,	,	PUNCT
bibechana-4828	207	18	addisionwesley	addisionwesley	NOUN
bibechana-4828	207	19	,	,	PUNCT
bibechana-4828	207	20	new	new	PROPN
bibechana-4828	207	21	york	york	PROPN
bibechana-4828	207	22	1990	1990	NUM
bibechana-4828	207	23	.	.	PUNCT