id	sid	tid	token	lemma	pos
cet-2317	1	1	chemical	chemical	NOUN
cet-2317	1	2	engineering	engineering	NOUN
cet-2317	1	3	transactions	transaction	NOUN
cet-2317	1	4	vol	vol	NOUN
cet-2317	1	5	.	.	PROPN
cet-2317	1	6	57	57	NUM
cet-2317	1	7	,	,	PUNCT
cet-2317	1	8	2017	2017	NUM
cet-2317	1	9	a	a	DET
cet-2317	1	10	publication	publication	NOUN
cet-2317	1	11	of	of	ADP
cet-2317	1	12	the	the	DET
cet-2317	1	13	italian	italian	ADJ
cet-2317	1	14	association	association	NOUN
cet-2317	1	15	of	of	ADP
cet-2317	1	16	chemical	chemical	PROPN
cet-2317	1	17	engineering	engineering	NOUN
cet-2317	1	18	online	online	ADV
cet-2317	1	19	at	at	ADP
cet-2317	1	20	www.aidic.it/cet	www.aidic.it/cet	PROPN
cet-2317	1	21	guest	guest	NOUN
cet-2317	1	22	editors	editor	NOUN
cet-2317	1	23	:	:	PUNCT
cet-2317	1	24	sauro	sauro	PROPN
cet-2317	1	25	pierucci	pierucci	PROPN
cet-2317	1	26	,	,	PUNCT
cet-2317	1	27	jiří	jiří	NOUN
cet-2317	1	28	jaromír	jaromír	PROPN
cet-2317	1	29	klemeš	klemeš	PROPN
cet-2317	1	30	,	,	PUNCT
cet-2317	1	31	laura	laura	PROPN
cet-2317	1	32	piazza	piazza	PROPN
cet-2317	1	33	,	,	PUNCT
cet-2317	1	34	serafim	serafim	NOUN
cet-2317	1	35	bakalis	bakali	VERB
cet-2317	1	36	copyright	copyright	NOUN
cet-2317	1	37	©	©	PROPN
cet-2317	1	38	2017	2017	NUM
cet-2317	1	39	,	,	PUNCT
cet-2317	1	40	aidic	aidic	ADJ
cet-2317	1	41	servizi	servizi	PROPN
cet-2317	1	42	s.r.l	s.r.l	PROPN
cet-2317	1	43	.	.	PUNCT
cet-2317	2	1	isbn	isbn	ADJ
cet-2317	2	2	978	978	NUM
cet-2317	2	3	-	-	SYM
cet-2317	2	4	88	88	NUM
cet-2317	2	5	-	-	PUNCT
cet-2317	2	6	9560848	9560848	NUM
cet-2317	2	7	-	-	SYM
cet-2317	2	8	8	8	NUM
cet-2317	2	9	;	;	PUNCT
cet-2317	2	10	issn	issn	PROPN
cet-2317	2	11	2283	2283	NUM
cet-2317	2	12	-	-	SYM
cet-2317	2	13	9216	9216	NUM
cet-2317	2	14	experimental	experimental	NOUN
cet-2317	2	15	,	,	PUNCT
cet-2317	2	16	modelling	modelling	NOUN
cet-2317	2	17	and	and	CCONJ
cet-2317	2	18	theoretical	theoretical	ADJ
cet-2317	2	19	study	study	NOUN
cet-2317	2	20	of	of	ADP
cet-2317	2	21	cnt	cnt	PROPN
cet-2317	2	22	growth	growth	NOUN
cet-2317	2	23	and	and	CCONJ
cet-2317	2	24	connection	connection	NOUN
cet-2317	2	25	on	on	ADP
cet-2317	2	26	a	a	DET
cet-2317	2	27	flip	flip	ADJ
cet-2317	2	28	chip	chip	NOUN
cet-2317	2	29	device	device	NOUN
cet-2317	2	30	to	to	PART
cet-2317	2	31	improve	improve	VERB
cet-2317	2	32	thermal	thermal	ADJ
cet-2317	2	33	management	management	NOUN
cet-2317	2	34	performances	performance	NOUN
cet-2317	2	35	maria	maria	PROPN
cet-2317	2	36	sarno	sarno	PROPN
cet-2317	2	37	,	,	PUNCT
cet-2317	2	38	rosangela	rosangela	PROPN
cet-2317	2	39	piscitelli	piscitelli	PROPN
cet-2317	2	40	*	*	PROPN
cet-2317	2	41	,	,	PUNCT
cet-2317	2	42	francesco	francesco	PROPN
cet-2317	2	43	marra	marra	PROPN
cet-2317	2	44	,	,	PUNCT
cet-2317	2	45	claudia	claudia	PROPN
cet-2317	2	46	cirillo	cirillo	PROPN
cet-2317	2	47	,	,	PUNCT
cet-2317	2	48	paolo	paolo	PROPN
cet-2317	2	49	ciambelli	ciambelli	PROPN
cet-2317	2	50	department	department	PROPN
cet-2317	2	51	of	of	ADP
cet-2317	2	52	industrial	industrial	ADJ
cet-2317	2	53	engineering	engineering	NOUN
cet-2317	2	54	and	and	CCONJ
cet-2317	2	55	centre	centre	NOUN
cet-2317	2	56	nano_mates	nano_mates	PROPN
cet-2317	2	57	,	,	PUNCT
cet-2317	2	58	university	university	NOUN
cet-2317	2	59	of	of	ADP
cet-2317	2	60	salerno	salerno	PROPN
cet-2317	2	61	via	via	ADP
cet-2317	2	62	giovanni	giovanni	PROPN
cet-2317	2	63	paolo	paolo	PROPN
cet-2317	2	64	ii	ii	PROPN
cet-2317	2	65	,	,	PUNCT
cet-2317	2	66	132	132	NUM
cet-2317	2	67	84084	84084	NUM
cet-2317	2	68	fisciano	fisciano	ADJ
cet-2317	2	69	(	(	PUNCT
cet-2317	2	70	sa	sa	PROPN
cet-2317	2	71	)	)	PUNCT
cet-2317	2	72	,	,	PUNCT
cet-2317	2	73	italy	italy	PROPN
cet-2317	2	74	rpiscitelli@unisa.it	rpiscitelli@unisa.it	NOUN
cet-2317	2	75	here	here	ADV
cet-2317	2	76	we	we	PRON
cet-2317	2	77	report	report	VERB
cet-2317	2	78	an	an	DET
cet-2317	2	79	experimental	experimental	ADJ
cet-2317	2	80	,	,	PUNCT
cet-2317	2	81	modelling	modelling	NOUN
cet-2317	2	82	and	and	CCONJ
cet-2317	2	83	theoretical	theoretical	ADJ
cet-2317	2	84	study	study	NOUN
cet-2317	2	85	of	of	ADP
cet-2317	2	86	cnt	cnt	PROPN
cet-2317	2	87	growth	growth	NOUN
cet-2317	2	88	and	and	CCONJ
cet-2317	2	89	connection	connection	NOUN
cet-2317	2	90	on	on	ADP
cet-2317	2	91	a	a	DET
cet-2317	2	92	chip	chip	NOUN
cet-2317	2	93	device	device	NOUN
cet-2317	2	94	with	with	ADP
cet-2317	2	95	a	a	DET
cet-2317	2	96	flip	flip	ADJ
cet-2317	2	97	chip	chip	NOUN
cet-2317	2	98	configuration	configuration	NOUN
cet-2317	2	99	used	use	VERB
cet-2317	2	100	to	to	PART
cet-2317	2	101	improve	improve	VERB
cet-2317	2	102	thermal	thermal	ADJ
cet-2317	2	103	management	management	NOUN
cet-2317	2	104	performances	performance	NOUN
cet-2317	2	105	,	,	PUNCT
cet-2317	2	106	in	in	ADP
cet-2317	2	107	order	order	NOUN
cet-2317	2	108	to	to	PART
cet-2317	2	109	elaborate	elaborate	VERB
cet-2317	2	110	board	board	NOUN
cet-2317	2	111	design	design	NOUN
cet-2317	2	112	analysis	analysis	NOUN
cet-2317	2	113	.	.	PUNCT
cet-2317	3	1	cnts	cnt	NOUN
cet-2317	3	2	growth	growth	PROPN
cet-2317	3	3	was	be	AUX
cet-2317	3	4	obtained	obtain	VERB
cet-2317	3	5	for	for	ADP
cet-2317	3	6	the	the	DET
cet-2317	3	7	first	first	ADJ
cet-2317	3	8	time	time	NOUN
cet-2317	3	9	on	on	ADP
cet-2317	3	10	aln	aln	NOUN
cet-2317	3	11	substrate	substrate	NOUN
cet-2317	3	12	typically	typically	ADV
cet-2317	3	13	used	use	VERB
cet-2317	3	14	in	in	ADP
cet-2317	3	15	high	high	ADJ
cet-2317	3	16	power	power	NOUN
cet-2317	3	17	electronic	electronic	NOUN
cet-2317	3	18	.	.	PUNCT
cet-2317	4	1	the	the	DET
cet-2317	4	2	thermal	thermal	ADJ
cet-2317	4	3	conductivity	conductivity	NOUN
cet-2317	4	4	of	of	ADP
cet-2317	4	5	isolated	isolated	ADJ
cet-2317	4	6	cnt	cnt	PROPN
cet-2317	4	7	was	be	AUX
cet-2317	4	8	1698,5	1698,5	NUM
cet-2317	4	9	w	w	PROPN
cet-2317	4	10	/	/	SYM
cet-2317	4	11	mk	mk	PROPN
cet-2317	4	12	.	.	PUNCT
cet-2317	5	1	moreover	moreover	ADV
cet-2317	5	2	,	,	PUNCT
cet-2317	5	3	the	the	DET
cet-2317	5	4	aim	aim	NOUN
cet-2317	5	5	of	of	ADP
cet-2317	5	6	this	this	DET
cet-2317	5	7	paper	paper	NOUN
cet-2317	5	8	was	be	AUX
cet-2317	5	9	to	to	PART
cet-2317	5	10	study	study	VERB
cet-2317	5	11	the	the	DET
cet-2317	5	12	role	role	NOUN
cet-2317	5	13	of	of	ADP
cet-2317	5	14	the	the	DET
cet-2317	5	15	design	design	NOUN
cet-2317	5	16	parameters	parameter	NOUN
cet-2317	5	17	to	to	PART
cet-2317	5	18	mitigate	mitigate	VERB
cet-2317	5	19	the	the	DET
cet-2317	5	20	effects	effect	NOUN
cet-2317	5	21	of	of	ADP
cet-2317	5	22	a	a	DET
cet-2317	5	23	non	non	ADJ
cet-2317	5	24	-	-	ADJ
cet-2317	5	25	correct	correct	ADJ
cet-2317	5	26	thermal	thermal	ADJ
cet-2317	5	27	management	management	NOUN
cet-2317	5	28	obtained	obtain	VERB
cet-2317	5	29	with	with	ADP
cet-2317	5	30	the	the	DET
cet-2317	5	31	help	help	NOUN
cet-2317	5	32	of	of	ADP
cet-2317	5	33	high	high	ADJ
cet-2317	5	34	thermal	thermal	ADJ
cet-2317	5	35	conductive	conductive	ADJ
cet-2317	5	36	cnt	cnt	PROPN
cet-2317	5	37	connections	connection	NOUN
cet-2317	5	38	bumps	bump	NOUN
cet-2317	5	39	.	.	PUNCT
cet-2317	6	1	with	with	ADP
cet-2317	6	2	the	the	DET
cet-2317	6	3	support	support	NOUN
cet-2317	6	4	of	of	ADP
cet-2317	6	5	a	a	DET
cet-2317	6	6	simulator	simulator	NOUN
cet-2317	6	7	we	we	PRON
cet-2317	6	8	evaluated	evaluate	VERB
cet-2317	6	9	thermal	thermal	ADJ
cet-2317	6	10	performances	performance	NOUN
cet-2317	6	11	to	to	PART
cet-2317	6	12	help	help	VERB
cet-2317	6	13	in	in	ADP
cet-2317	6	14	a	a	DET
cet-2317	6	15	preliminary	preliminary	ADJ
cet-2317	6	16	phase	phase	NOUN
cet-2317	6	17	the	the	DET
cet-2317	6	18	board	board	NOUN
cet-2317	6	19	design	design	NOUN
cet-2317	6	20	.	.	PUNCT
cet-2317	7	1	we	we	PRON
cet-2317	7	2	worked	work	VERB
cet-2317	7	3	on	on	ADP
cet-2317	7	4	a	a	DET
cet-2317	7	5	configuration	configuration	NOUN
cet-2317	7	6	that	that	PRON
cet-2317	7	7	would	would	AUX
cet-2317	7	8	allow	allow	VERB
cet-2317	7	9	the	the	DET
cet-2317	7	10	direct	direct	ADJ
cet-2317	7	11	integration	integration	NOUN
cet-2317	7	12	into	into	ADP
cet-2317	7	13	flip	flip	NOUN
cet-2317	7	14	-	-	PUNCT
cet-2317	7	15	chip	chip	NOUN
cet-2317	7	16	devices	device	NOUN
cet-2317	7	17	in	in	ADP
cet-2317	7	18	order	order	NOUN
cet-2317	7	19	to	to	PART
cet-2317	7	20	reduce	reduce	VERB
cet-2317	7	21	the	the	DET
cet-2317	7	22	thermal	thermal	ADJ
cet-2317	7	23	contact	contact	NOUN
cet-2317	7	24	resistance	resistance	NOUN
cet-2317	7	25	at	at	ADP
cet-2317	7	26	interfaces	interface	NOUN
cet-2317	7	27	from	from	ADP
cet-2317	7	28	the	the	DET
cet-2317	7	29	die	die	NOUN
cet-2317	7	30	through	through	ADP
cet-2317	7	31	the	the	DET
cet-2317	7	32	heat	heat	NOUN
cet-2317	7	33	spreader	spreader	NOUN
cet-2317	7	34	and	and	CCONJ
cet-2317	7	35	the	the	DET
cet-2317	7	36	junction	junction	NOUN
cet-2317	7	37	temperature	temperature	NOUN
cet-2317	7	38	and	and	CCONJ
cet-2317	7	39	thermal	thermal	ADJ
cet-2317	7	40	crosstalk	crosstalk	NOUN
cet-2317	7	41	.	.	PUNCT
cet-2317	8	1	1	1	X
cet-2317	8	2	.	.	X
cet-2317	8	3	introduction	introduction	NOUN
cet-2317	8	4	constant	constant	ADJ
cet-2317	8	5	improvements	improvement	NOUN
cet-2317	8	6	in	in	ADP
cet-2317	8	7	power	power	NOUN
cet-2317	8	8	electronics	electronic	NOUN
cet-2317	8	9	has	have	AUX
cet-2317	8	10	generated	generate	VERB
cet-2317	8	11	an	an	DET
cet-2317	8	12	unavoidable	unavoidable	ADJ
cet-2317	8	13	increase	increase	NOUN
cet-2317	8	14	in	in	ADP
cet-2317	8	15	power	power	NOUN
cet-2317	8	16	density	density	NOUN
cet-2317	8	17	,	,	PUNCT
cet-2317	8	18	created	create	VERB
cet-2317	8	19	more	more	ADJ
cet-2317	8	20	waste	waste	NOUN
cet-2317	8	21	heat	heat	NOUN
cet-2317	8	22	,	,	PUNCT
cet-2317	8	23	reduced	reduce	VERB
cet-2317	8	24	the	the	DET
cet-2317	8	25	efficiency	efficiency	NOUN
cet-2317	8	26	and	and	CCONJ
cet-2317	8	27	lowered	lower	VERB
cet-2317	8	28	the	the	DET
cet-2317	8	29	durability	durability	NOUN
cet-2317	8	30	.	.	PUNCT
cet-2317	9	1	this	this	DET
cet-2317	9	2	issues	issue	NOUN
cet-2317	9	3	become	become	VERB
cet-2317	9	4	even	even	ADV
cet-2317	9	5	more	more	ADV
cet-2317	9	6	challenging	challenging	ADJ
cet-2317	9	7	when	when	SCONJ
cet-2317	9	8	coupled	couple	VERB
cet-2317	9	9	with	with	ADP
cet-2317	9	10	compact	compact	ADJ
cet-2317	9	11	size	size	NOUN
cet-2317	9	12	,	,	PUNCT
cet-2317	9	13	light	light	ADJ
cet-2317	9	14	weight	weight	NOUN
cet-2317	9	15	and	and	CCONJ
cet-2317	9	16	lower	low	ADJ
cet-2317	9	17	cost	cost	NOUN
cet-2317	9	18	requirements	requirement	NOUN
cet-2317	9	19	.	.	PUNCT
cet-2317	10	1	planning	plan	VERB
cet-2317	10	2	how	how	SCONJ
cet-2317	10	3	to	to	PART
cet-2317	10	4	manage	manage	VERB
cet-2317	10	5	the	the	DET
cet-2317	10	6	waste	waste	NOUN
cet-2317	10	7	heat	heat	NOUN
cet-2317	10	8	in	in	ADP
cet-2317	10	9	the	the	DET
cet-2317	10	10	preliminary	preliminary	ADJ
cet-2317	10	11	phase	phase	NOUN
cet-2317	10	12	of	of	ADP
cet-2317	10	13	board	board	NOUN
cet-2317	10	14	layout	layout	PROPN
cet-2317	10	15	design	design	NOUN
cet-2317	10	16	appears	appear	VERB
cet-2317	10	17	fundamental	fundamental	ADJ
cet-2317	10	18	to	to	PART
cet-2317	10	19	mitigate	mitigate	VERB
cet-2317	10	20	the	the	DET
cet-2317	10	21	effects	effect	NOUN
cet-2317	10	22	of	of	ADP
cet-2317	10	23	a	a	DET
cet-2317	10	24	non	non	ADJ
cet-2317	10	25	-	-	ADJ
cet-2317	10	26	correct	correct	ADJ
cet-2317	10	27	thermal	thermal	ADJ
cet-2317	10	28	management	management	NOUN
cet-2317	10	29	.	.	PUNCT
cet-2317	11	1	high	high	ADJ
cet-2317	11	2	electron	electron	NOUN
cet-2317	11	3	mobility	mobility	NOUN
cet-2317	11	4	transistors	transistor	NOUN
cet-2317	11	5	(	(	PUNCT
cet-2317	11	6	hemts	hemts	PROPN
cet-2317	11	7	)	)	PUNCT
cet-2317	11	8	with	with	ADP
cet-2317	11	9	their	their	PRON
cet-2317	11	10	highpower	highpower	NOUN
cet-2317	11	11	,	,	PUNCT
cet-2317	11	12	high	high	ADJ
cet-2317	11	13	frequency	frequency	NOUN
cet-2317	11	14	and	and	CCONJ
cet-2317	11	15	high	high	ADJ
cet-2317	11	16	temperature	temperature	NOUN
cet-2317	11	17	applications	application	NOUN
cet-2317	11	18	show	show	VERB
cet-2317	11	19	a	a	DET
cet-2317	11	20	temperature	temperature	NOUN
cet-2317	11	21	increase	increase	NOUN
cet-2317	11	22	,	,	PUNCT
cet-2317	11	23	in	in	ADP
cet-2317	11	24	channel	channel	NOUN
cet-2317	11	25	region	region	NOUN
cet-2317	11	26	over	over	ADP
cet-2317	11	27	100	100	NUM
cet-2317	11	28	°	°	NOUN
cet-2317	11	29	c	c	NOUN
cet-2317	11	30	than	than	ADP
cet-2317	11	31	ambient	ambient	ADJ
cet-2317	11	32	temperature	temperature	NOUN
cet-2317	11	33	,	,	PUNCT
cet-2317	11	34	as	as	SCONJ
cet-2317	11	35	also	also	ADV
cet-2317	11	36	confirmed	confirm	VERB
cet-2317	11	37	by	by	ADP
cet-2317	11	38	wang	wang	PROPN
cet-2317	11	39	et	et	PROPN
cet-2317	11	40	al	al	PROPN
cet-2317	11	41	.	.	PUNCT
cet-2317	12	1	(	(	PUNCT
cet-2317	12	2	wang	wang	PROPN
cet-2317	12	3	et	et	PROPN
cet-2317	12	4	al	al	PROPN
cet-2317	12	5	.	.	PROPN
cet-2317	12	6	,	,	PUNCT
cet-2317	12	7	2013	2013	NUM
cet-2317	12	8	)	)	PUNCT
cet-2317	12	9	.	.	PUNCT
cet-2317	13	1	often	often	ADV
cet-2317	13	2	,	,	PUNCT
cet-2317	13	3	significant	significant	ADJ
cet-2317	13	4	thermal	thermal	ADJ
cet-2317	13	5	contact	contact	NOUN
cet-2317	13	6	resistance	resistance	NOUN
cet-2317	13	7	at	at	ADP
cet-2317	13	8	multiple	multiple	ADJ
cet-2317	13	9	interfaces	interface	NOUN
cet-2317	13	10	from	from	ADP
cet-2317	13	11	the	the	DET
cet-2317	13	12	die	die	NOUN
cet-2317	13	13	through	through	ADP
cet-2317	13	14	the	the	DET
cet-2317	13	15	heat	heat	NOUN
cet-2317	13	16	spreader	spreader	NOUN
cet-2317	13	17	to	to	ADP
cet-2317	13	18	the	the	DET
cet-2317	13	19	heat	heat	NOUN
cet-2317	13	20	sink	sink	NOUN
cet-2317	13	21	remains	remain	VERB
cet-2317	13	22	a	a	DET
cet-2317	13	23	challenging	challenging	ADJ
cet-2317	13	24	problem	problem	NOUN
cet-2317	13	25	.	.	PUNCT
cet-2317	14	1	limited	limited	ADJ
cet-2317	14	2	cooling	cool	VERB
cet-2317	14	3	capabilities	capability	NOUN
cet-2317	14	4	give	give	VERB
cet-2317	14	5	rise	rise	NOUN
cet-2317	14	6	to	to	ADP
cet-2317	14	7	localized	localized	ADJ
cet-2317	14	8	heating	heating	NOUN
cet-2317	14	9	spots	spot	NOUN
cet-2317	14	10	,	,	PUNCT
cet-2317	14	11	known	know	VERB
cet-2317	14	12	as	as	ADP
cet-2317	14	13	hotspots	hotspot	NOUN
cet-2317	14	14	,	,	PUNCT
cet-2317	14	15	at	at	ADP
cet-2317	14	16	highly	highly	ADV
cet-2317	14	17	active	active	ADJ
cet-2317	14	18	regions	region	NOUN
cet-2317	14	19	of	of	ADP
cet-2317	14	20	a	a	DET
cet-2317	14	21	chip	chip	NOUN
cet-2317	14	22	as	as	SCONJ
cet-2317	14	23	confirmed	confirm	VERB
cet-2317	14	24	by	by	ADP
cet-2317	14	25	zhang	zhang	PROPN
cet-2317	14	26	et	et	PROPN
cet-2317	14	27	al	al	PROPN
cet-2317	14	28	.	.	PUNCT
cet-2317	15	1	(	(	PUNCT
cet-2317	15	2	zhang	zhang	PROPN
cet-2317	15	3	et	et	PROPN
cet-2317	15	4	al	al	PROPN
cet-2317	15	5	.	.	PROPN
cet-2317	15	6	,	,	PUNCT
cet-2317	15	7	2011	2011	NUM
cet-2317	15	8	)	)	PUNCT
cet-2317	15	9	.	.	PUNCT
cet-2317	16	1	so	so	ADV
cet-2317	16	2	,	,	PUNCT
cet-2317	16	3	the	the	DET
cet-2317	16	4	possibility	possibility	NOUN
cet-2317	16	5	to	to	PART
cet-2317	16	6	have	have	AUX
cet-2317	16	7	a	a	DET
cet-2317	16	8	connection	connection	NOUN
cet-2317	16	9	medium	medium	NOUN
cet-2317	16	10	which	which	PRON
cet-2317	16	11	can	can	AUX
cet-2317	16	12	itself	itself	PRON
cet-2317	16	13	improve	improve	VERB
cet-2317	16	14	heat	heat	NOUN
cet-2317	16	15	dissipation	dissipation	NOUN
cet-2317	16	16	between	between	ADP
cet-2317	16	17	the	the	DET
cet-2317	16	18	substrate	substrate	NOUN
cet-2317	16	19	and	and	CCONJ
cet-2317	16	20	the	the	DET
cet-2317	16	21	heat	heat	NOUN
cet-2317	16	22	spreader	spreader	NOUN
cet-2317	16	23	appears	appear	VERB
cet-2317	16	24	the	the	DET
cet-2317	16	25	best	good	ADJ
cet-2317	16	26	solution	solution	NOUN
cet-2317	16	27	:	:	PUNCT
cet-2317	16	28	chip	chip	NOUN
cet-2317	16	29	reliability	reliability	NOUN
cet-2317	16	30	improves	improve	VERB
cet-2317	16	31	and	and	CCONJ
cet-2317	16	32	the	the	DET
cet-2317	16	33	thermal	thermal	ADJ
cet-2317	16	34	crosstalk	crosstalk	VERB
cet-2317	16	35	through	through	ADP
cet-2317	16	36	the	the	DET
cet-2317	16	37	channel	channel	NOUN
cet-2317	16	38	region	region	NOUN
cet-2317	16	39	can	can	AUX
cet-2317	16	40	be	be	AUX
cet-2317	16	41	reduced	reduce	VERB
cet-2317	16	42	.	.	PUNCT
cet-2317	17	1	carbon	carbon	NOUN
cet-2317	17	2	nanotubes	nanotube	NOUN
cet-2317	17	3	(	(	PUNCT
cet-2317	17	4	cnts	cnt	NOUN
cet-2317	17	5	)	)	PUNCT
cet-2317	17	6	have	have	AUX
cet-2317	17	7	been	be	AUX
cet-2317	17	8	investigated	investigate	VERB
cet-2317	17	9	as	as	ADP
cet-2317	17	10	a	a	DET
cet-2317	17	11	thermal	thermal	ADJ
cet-2317	17	12	spreader	spreader	NOUN
cet-2317	17	13	medium	medium	NOUN
cet-2317	17	14	to	to	PART
cet-2317	17	15	balance	balance	VERB
cet-2317	17	16	the	the	DET
cet-2317	17	17	temperature	temperature	NOUN
cet-2317	17	18	across	across	ADP
cet-2317	17	19	the	the	DET
cet-2317	17	20	chip	chip	NOUN
cet-2317	17	21	and	and	CCONJ
cet-2317	17	22	reduce	reduce	VERB
cet-2317	17	23	peak	peak	NOUN
cet-2317	17	24	temperature	temperature	NOUN
cet-2317	17	25	.	.	PUNCT
cet-2317	18	1	indeed	indeed	ADV
cet-2317	18	2	cnts	cnts	PROPN
cet-2317	18	3	have	have	VERB
cet-2317	18	4	excellent	excellent	ADJ
cet-2317	18	5	characteristics	characteristic	NOUN
cet-2317	18	6	,	,	PUNCT
cet-2317	18	7	such	such	ADJ
cet-2317	18	8	as	as	ADP
cet-2317	18	9	high	high	ADJ
cet-2317	18	10	current	current	ADJ
cet-2317	18	11	handling	handling	NOUN
cet-2317	18	12	capability	capability	NOUN
cet-2317	18	13	and	and	CCONJ
cet-2317	18	14	low	low	ADJ
cet-2317	18	15	resistance	resistance	NOUN
cet-2317	18	16	(	(	PUNCT
cet-2317	18	17	horibe	horibe	NOUN
cet-2317	18	18	et	et	PROPN
cet-2317	18	19	al	al	PROPN
cet-2317	18	20	,	,	PUNCT
cet-2317	18	21	2004	2004	NUM
cet-2317	18	22	)	)	PUNCT
cet-2317	18	23	,	,	PUNCT
cet-2317	18	24	they	they	PRON
cet-2317	18	25	also	also	ADV
cet-2317	18	26	exhibit	exhibit	VERB
cet-2317	18	27	high	high	ADJ
cet-2317	18	28	thermal	thermal	ADJ
cet-2317	18	29	conductivity	conductivity	NOUN
cet-2317	18	30	(	(	PUNCT
cet-2317	18	31	kim	kim	PROPN
cet-2317	18	32	et	et	PROPN
cet-2317	18	33	al	al	PROPN
cet-2317	18	34	.	.	PROPN
cet-2317	18	35	,	,	PUNCT
cet-2317	18	36	2001	2001	NUM
cet-2317	18	37	;	;	PUNCT
cet-2317	18	38	shioya	shioya	PROPN
cet-2317	18	39	et	et	PROPN
cet-2317	18	40	al	al	PROPN
cet-2317	18	41	.	.	PROPN
cet-2317	18	42	,	,	PUNCT
cet-2317	18	43	2007	2007	NUM
cet-2317	18	44	)	)	PUNCT
cet-2317	18	45	,	,	PUNCT
cet-2317	18	46	and	and	CCONJ
cet-2317	18	47	high	high	ADJ
cet-2317	18	48	aspect	aspect	NOUN
cet-2317	18	49	structure	structure	NOUN
cet-2317	18	50	(	(	PUNCT
cet-2317	18	51	soga	soga	NOUN
cet-2317	18	52	et	et	PROPN
cet-2317	18	53	al	al	PROPN
cet-2317	18	54	.	.	PROPN
cet-2317	18	55	,	,	PUNCT
cet-2317	18	56	2009	2009	NUM
cet-2317	18	57	)	)	PUNCT
cet-2317	18	58	.	.	PUNCT
cet-2317	19	1	lu	lu	PROPN
cet-2317	19	2	et	et	PROPN
cet-2317	19	3	al	al	PROPN
cet-2317	19	4	.	.	PUNCT
cet-2317	20	1	(	(	PUNCT
cet-2317	20	2	lu	lu	INTJ
cet-2317	20	3	et	et	PROPN
cet-2317	20	4	al	al	PROPN
cet-2317	20	5	.	.	PROPN
cet-2317	20	6	,	,	PUNCT
cet-2317	20	7	2012	2012	NUM
cet-2317	20	8	)	)	PUNCT
cet-2317	20	9	validated	validate	VERB
cet-2317	20	10	the	the	DET
cet-2317	20	11	possibility	possibility	NOUN
cet-2317	20	12	to	to	PART
cet-2317	20	13	use	use	VERB
cet-2317	20	14	cnts	cnt	NOUN
cet-2317	20	15	bumps	bump	NOUN
cet-2317	20	16	in	in	ADP
cet-2317	20	17	a	a	DET
cet-2317	20	18	flip	flip	NOUN
cet-2317	20	19	-	-	PUNCT
cet-2317	20	20	chip	chip	NOUN
cet-2317	20	21	configuration	configuration	NOUN
cet-2317	20	22	to	to	PART
cet-2317	20	23	allow	allow	VERB
cet-2317	20	24	direct	direct	ADJ
cet-2317	20	25	integration	integration	NOUN
cet-2317	20	26	into	into	ADP
cet-2317	20	27	devices	device	NOUN
cet-2317	20	28	,	,	PUNCT
cet-2317	20	29	reducing	reduce	VERB
cet-2317	20	30	the	the	DET
cet-2317	20	31	thermal	thermal	ADJ
cet-2317	20	32	contact	contact	NOUN
cet-2317	20	33	resistance	resistance	NOUN
cet-2317	20	34	at	at	ADP
cet-2317	20	35	interfaces	interface	NOUN
cet-2317	20	36	and	and	CCONJ
cet-2317	20	37	avoiding	avoid	VERB
cet-2317	20	38	larger	large	ADJ
cet-2317	20	39	resistance	resistance	NOUN
cet-2317	20	40	due	due	ADP
cet-2317	20	41	to	to	ADP
cet-2317	20	42	defects	defect	NOUN
cet-2317	20	43	via	via	ADP
cet-2317	20	44	solders	solder	NOUN
cet-2317	20	45	bumps	bump	NOUN
cet-2317	20	46	.	.	PUNCT
cet-2317	21	1	indeed	indeed	ADV
cet-2317	21	2	covalent	covalent	ADJ
cet-2317	21	3	bonds	bond	NOUN
cet-2317	21	4	could	could	AUX
cet-2317	21	5	improve	improve	VERB
cet-2317	21	6	adhesion	adhesion	NOUN
cet-2317	21	7	and	and	CCONJ
cet-2317	21	8	minimize	minimize	VERB
cet-2317	21	9	thermal	thermal	ADJ
cet-2317	21	10	resistance	resistance	NOUN
cet-2317	21	11	,	,	PUNCT
cet-2317	21	12	as	as	SCONJ
cet-2317	21	13	stated	state	VERB
cet-2317	21	14	by	by	ADP
cet-2317	21	15	kaur	kaur	PROPN
cet-2317	21	16	et	et	PROPN
cet-2317	21	17	al	al	PROPN
cet-2317	21	18	.	.	PUNCT
cet-2317	22	1	(	(	PUNCT
cet-2317	22	2	kaur	kaur	PROPN
cet-2317	22	3	et	et	PROPN
cet-2317	22	4	al	al	PROPN
cet-2317	22	5	.	.	PROPN
cet-2317	22	6	,	,	PUNCT
cet-2317	22	7	2014	2014	NUM
cet-2317	22	8	)	)	PUNCT
cet-2317	22	9	.	.	PUNCT
cet-2317	23	1	the	the	DET
cet-2317	23	2	flip	flip	NOUN
cet-2317	23	3	-	-	PUNCT
cet-2317	23	4	chip	chip	NOUN
cet-2317	23	5	connection	connection	NOUN
cet-2317	23	6	has	have	VERB
cet-2317	23	7	many	many	ADJ
cet-2317	23	8	advantages	advantage	NOUN
cet-2317	23	9	compared	compare	VERB
cet-2317	23	10	to	to	ADP
cet-2317	23	11	the	the	DET
cet-2317	23	12	wire	wire	NOUN
cet-2317	23	13	bonding	bonding	NOUN
cet-2317	23	14	connections	connection	NOUN
cet-2317	23	15	in	in	ADP
cet-2317	23	16	term	term	NOUN
cet-2317	23	17	of	of	ADP
cet-2317	23	18	thermal	thermal	ADJ
cet-2317	23	19	and	and	CCONJ
cet-2317	23	20	electrical	electrical	ADJ
cet-2317	23	21	aspects	aspect	NOUN
cet-2317	23	22	.	.	PUNCT
cet-2317	24	1	doi	doi	NOUN
cet-2317	24	2	:	:	PUNCT
cet-2317	24	3	10.3303	10.3303	NUM
cet-2317	24	4	/	/	SYM
cet-2317	24	5	cet1757254	cet1757254	NOUN
cet-2317	24	6	please	please	INTJ
cet-2317	24	7	cite	cite	VERB
cet-2317	24	8	this	this	DET
cet-2317	24	9	article	article	NOUN
cet-2317	24	10	as	as	ADP
cet-2317	24	11	:	:	PUNCT
cet-2317	24	12	sarno	sarno	PROPN
cet-2317	24	13	m.	m.	PROPN
cet-2317	24	14	,	,	PUNCT
cet-2317	24	15	piscitelli	piscitelli	PROPN
cet-2317	24	16	r.	r.	PROPN
cet-2317	24	17	,	,	PUNCT
cet-2317	24	18	marra	marra	PROPN
cet-2317	24	19	f.	f.	PROPN
cet-2317	24	20	,	,	PUNCT
cet-2317	24	21	cirillo	cirillo	PROPN
cet-2317	24	22	c.	c.	PROPN
cet-2317	24	23	,	,	PUNCT
cet-2317	24	24	ciambelli	ciambelli	PROPN
cet-2317	24	25	p.	p.	PROPN
cet-2317	24	26	,	,	PUNCT
cet-2317	24	27	2017	2017	NUM
cet-2317	24	28	,	,	PUNCT
cet-2317	24	29	experimental	experimental	ADJ
cet-2317	24	30	,	,	PUNCT
cet-2317	24	31	modelling	modelling	NOUN
cet-2317	24	32	and	and	CCONJ
cet-2317	24	33	theoretical	theoretical	ADJ
cet-2317	24	34	study	study	NOUN
cet-2317	24	35	of	of	ADP
cet-2317	24	36	cnt	cnt	PROPN
cet-2317	24	37	growth	growth	NOUN
cet-2317	24	38	and	and	CCONJ
cet-2317	24	39	connection	connection	NOUN
cet-2317	24	40	on	on	ADP
cet-2317	24	41	a	a	DET
cet-2317	24	42	flip	flip	ADJ
cet-2317	24	43	chip	chip	NOUN
cet-2317	24	44	device	device	NOUN
cet-2317	24	45	to	to	PART
cet-2317	24	46	improve	improve	VERB
cet-2317	24	47	thermal	thermal	ADJ
cet-2317	24	48	management	management	NOUN
cet-2317	24	49	performances	performance	NOUN
cet-2317	24	50	,	,	PUNCT
cet-2317	24	51	chemical	chemical	ADJ
cet-2317	24	52	engineering	engineering	NOUN
cet-2317	24	53	transactions	transaction	NOUN
cet-2317	24	54	,	,	PUNCT
cet-2317	24	55	57	57	NUM
cet-2317	24	56	,	,	PUNCT
cet-2317	24	57	15191524	15191524	NUM
cet-2317	24	58	doi	doi	NOUN
cet-2317	24	59	:	:	PUNCT
cet-2317	24	60	10.3303	10.3303	NUM
cet-2317	24	61	/	/	SYM
cet-2317	24	62	cet1757254	cet1757254	NOUN
cet-2317	24	63	1519	1519	NUM
cet-2317	24	64	here	here	ADV
cet-2317	24	65	we	we	PRON
cet-2317	24	66	report	report	VERB
cet-2317	24	67	an	an	DET
cet-2317	24	68	experimental	experimental	ADJ
cet-2317	24	69	,	,	PUNCT
cet-2317	24	70	modelling	modelling	NOUN
cet-2317	24	71	and	and	CCONJ
cet-2317	24	72	theoretical	theoretical	ADJ
cet-2317	24	73	study	study	NOUN
cet-2317	24	74	of	of	ADP
cet-2317	24	75	cnt	cnt	PROPN
cet-2317	24	76	growth	growth	NOUN
cet-2317	24	77	and	and	CCONJ
cet-2317	24	78	connection	connection	NOUN
cet-2317	24	79	on	on	ADP
cet-2317	24	80	a	a	DET
cet-2317	24	81	chip	chip	NOUN
cet-2317	24	82	device	device	NOUN
cet-2317	24	83	with	with	ADP
cet-2317	24	84	a	a	DET
cet-2317	24	85	flip	flip	ADJ
cet-2317	24	86	chip	chip	NOUN
cet-2317	24	87	configuration	configuration	NOUN
cet-2317	24	88	used	use	VERB
cet-2317	24	89	to	to	PART
cet-2317	24	90	improve	improve	VERB
cet-2317	24	91	thermal	thermal	ADJ
cet-2317	24	92	management	management	NOUN
cet-2317	24	93	performances	performance	NOUN
cet-2317	24	94	,	,	PUNCT
cet-2317	24	95	in	in	ADP
cet-2317	24	96	order	order	NOUN
cet-2317	24	97	to	to	PART
cet-2317	24	98	elaborate	elaborate	VERB
cet-2317	24	99	board	board	NOUN
cet-2317	24	100	design	design	NOUN
cet-2317	24	101	analysis	analysis	NOUN
cet-2317	24	102	.	.	PUNCT
cet-2317	25	1	in	in	ADP
cet-2317	25	2	particular	particular	ADJ
cet-2317	25	3	,	,	PUNCT
cet-2317	25	4	cnts	cnts	PROPN
cet-2317	25	5	growth	growth	NOUN
cet-2317	25	6	by	by	ADP
cet-2317	25	7	a	a	DET
cet-2317	25	8	chemical	chemical	ADJ
cet-2317	25	9	vapour	vapour	NOUN
cet-2317	25	10	deposition	deposition	NOUN
cet-2317	25	11	(	(	PUNCT
cet-2317	25	12	cvd	cvd	PROPN
cet-2317	25	13	)	)	PUNCT
cet-2317	25	14	for	for	ADP
cet-2317	25	15	the	the	DET
cet-2317	25	16	first	first	ADJ
cet-2317	25	17	time	time	NOUN
cet-2317	25	18	on	on	ADP
cet-2317	25	19	an	an	DET
cet-2317	25	20	aln	aln	NOUN
cet-2317	25	21	substrate	substrate	NOUN
cet-2317	25	22	,	,	PUNCT
cet-2317	25	23	typically	typically	ADV
cet-2317	25	24	used	use	VERB
cet-2317	25	25	for	for	ADP
cet-2317	25	26	microelectronic	microelectronic	ADJ
cet-2317	25	27	applications	application	NOUN
cet-2317	25	28	,	,	PUNCT
cet-2317	25	29	was	be	AUX
cet-2317	25	30	obtained	obtain	VERB
cet-2317	25	31	,	,	PUNCT
cet-2317	25	32	and	and	CCONJ
cet-2317	25	33	the	the	DET
cet-2317	25	34	thermal	thermal	ADJ
cet-2317	25	35	conductivity	conductivity	NOUN
cet-2317	25	36	measured	measure	VERB
cet-2317	25	37	.	.	PUNCT
cet-2317	26	1	the	the	DET
cet-2317	26	2	mechanism	mechanism	NOUN
cet-2317	26	3	of	of	ADP
cet-2317	26	4	cnt	cnt	PROPN
cet-2317	26	5	thermal	thermal	ADJ
cet-2317	26	6	management	management	NOUN
cet-2317	26	7	by	by	ADP
cet-2317	26	8	comsol	comsol	NOUN
cet-2317	26	9	modelling	modelling	NOUN
cet-2317	26	10	was	be	AUX
cet-2317	26	11	explored	explore	VERB
cet-2317	26	12	too	too	ADV
cet-2317	26	13	.	.	PUNCT
cet-2317	27	1	2	2	X
cet-2317	27	2	.	.	X
cet-2317	27	3	carbon	carbon	NOUN
cet-2317	27	4	nanotubes	nanotube	NOUN
cet-2317	27	5	synthesis	synthesis	NOUN
cet-2317	27	6	:	:	PUNCT
cet-2317	27	7	experimental	experimental	ADJ
cet-2317	27	8	,	,	PUNCT
cet-2317	27	9	results	result	NOUN
cet-2317	27	10	and	and	CCONJ
cet-2317	27	11	discussion	discussion	NOUN
cet-2317	27	12	.	.	PUNCT
cet-2317	28	1	carbon	carbon	NOUN
cet-2317	28	2	nanotubes	nanotube	NOUN
cet-2317	28	3	forests	forest	NOUN
cet-2317	28	4	were	be	AUX
cet-2317	28	5	prepared	prepare	VERB
cet-2317	28	6	by	by	ADP
cet-2317	28	7	cvd	cvd	PROPN
cet-2317	28	8	in	in	ADP
cet-2317	28	9	a	a	DET
cet-2317	28	10	continuous	continuous	ADJ
cet-2317	28	11	flow	flow	NOUN
cet-2317	28	12	microreactor	microreactor	NOUN
cet-2317	28	13	.	.	PUNCT
cet-2317	29	1	before	before	ADP
cet-2317	29	2	the	the	DET
cet-2317	29	3	synthesis	synthesis	NOUN
cet-2317	29	4	,	,	PUNCT
cet-2317	29	5	an	an	DET
cet-2317	29	6	optimized	optimize	VERB
cet-2317	29	7	catalytic	catalytic	ADJ
cet-2317	29	8	substrate	substrate	NOUN
cet-2317	29	9	,	,	PUNCT
cet-2317	29	10	common	common	ADJ
cet-2317	29	11	deposition	deposition	NOUN
cet-2317	29	12	techniques	technique	NOUN
cet-2317	29	13	resulted	result	VERB
cet-2317	29	14	in	in	ADP
cet-2317	29	15	cnts	cnts	PROPN
cet-2317	29	16	forests	forest	NOUN
cet-2317	29	17	peeling	peel	VERB
cet-2317	29	18	off	off	ADP
cet-2317	29	19	,	,	PUNCT
cet-2317	29	20	was	be	AUX
cet-2317	29	21	obtained	obtain	VERB
cet-2317	29	22	by	by	ADP
cet-2317	29	23	deposition	deposition	NOUN
cet-2317	29	24	of	of	ADP
cet-2317	29	25	nickel	nickel	NOUN
cet-2317	29	26	ferrites	ferrite	NOUN
cet-2317	29	27	nanoparticles	nanoparticle	NOUN
cet-2317	29	28	(	(	PUNCT
cet-2317	29	29	nps	nps	PROPN
cet-2317	29	30	)	)	PUNCT
cet-2317	29	31	(	(	PUNCT
cet-2317	29	32	altavilla	altavilla	PROPN
cet-2317	29	33	et	et	PROPN
cet-2317	29	34	al	al	PROPN
cet-2317	29	35	.	.	PROPN
cet-2317	29	36	,	,	PUNCT
cet-2317	29	37	2009	2009	NUM
cet-2317	29	38	)	)	PUNCT
cet-2317	29	39	on	on	ADP
cet-2317	29	40	aluminium	aluminium	NOUN
cet-2317	29	41	nitride	nitride	NOUN
cet-2317	29	42	.	.	PUNCT
cet-2317	30	1	indeed	indeed	ADV
cet-2317	30	2	,	,	PUNCT
cet-2317	30	3	the	the	DET
cet-2317	30	4	“	"	PUNCT
cet-2317	30	5	wet	wet	ADJ
cet-2317	30	6	chemistry	chemistry	NOUN
cet-2317	30	7	”	"	PUNCT
cet-2317	30	8	approach	approach	NOUN
cet-2317	30	9	used	use	VERB
cet-2317	30	10	for	for	ADP
cet-2317	30	11	the	the	DET
cet-2317	30	12	synthesis	synthesis	NOUN
cet-2317	30	13	of	of	ADP
cet-2317	30	14	the	the	DET
cet-2317	30	15	nanoparticles	nanoparticle	NOUN
cet-2317	30	16	results	result	VERB
cet-2317	30	17	in	in	ADP
cet-2317	30	18	a	a	DET
cet-2317	30	19	nanohybrid	nanohybrid	NOUN
cet-2317	30	20	of	of	ADP
cet-2317	30	21	nickel	nickel	NOUN
cet-2317	30	22	ferrites	ferrite	NOUN
cet-2317	30	23	nps	nps	PROPN
cet-2317	30	24	covered	cover	VERB
cet-2317	30	25	by	by	ADP
cet-2317	30	26	hydrophobic	hydrophobic	ADJ
cet-2317	30	27	organic	organic	ADJ
cet-2317	30	28	chains	chain	NOUN
cet-2317	30	29	improving	improve	VERB
cet-2317	30	30	wettability	wettability	NOUN
cet-2317	30	31	and	and	CCONJ
cet-2317	30	32	adhesion	adhesion	NOUN
cet-2317	30	33	on	on	ADP
cet-2317	30	34	the	the	DET
cet-2317	30	35	aln	aln	NOUN
cet-2317	30	36	substrate	substrate	NOUN
cet-2317	30	37	.	.	PUNCT
cet-2317	31	1	acetylene	acetylene	NOUN
cet-2317	31	2	cvd	cvd	PROPN
cet-2317	31	3	,	,	PUNCT
cet-2317	31	4	acetylene	acetylene	NOUN
cet-2317	31	5	was	be	AUX
cet-2317	31	6	chosen	choose	VERB
cet-2317	31	7	because	because	SCONJ
cet-2317	31	8	permits	permit	VERB
cet-2317	31	9	thanks	thank	NOUN
cet-2317	31	10	to	to	ADP
cet-2317	31	11	its	its	PRON
cet-2317	31	12	reactivity	reactivity	NOUN
cet-2317	31	13	to	to	AUX
cet-2317	31	14	growth	growth	VERB
cet-2317	31	15	cnt	cnt	ADV
cet-2317	31	16	at	at	ADP
cet-2317	31	17	lower	low	ADJ
cet-2317	31	18	temperature	temperature	NOUN
cet-2317	31	19	,	,	PUNCT
cet-2317	31	20	was	be	AUX
cet-2317	31	21	carried	carry	VERB
cet-2317	31	22	out	out	ADP
cet-2317	31	23	in	in	ADP
cet-2317	31	24	a	a	DET
cet-2317	31	25	continuous	continuous	ADJ
cet-2317	31	26	flow	flow	NOUN
cet-2317	31	27	microreactor	microreactor	NOUN
cet-2317	31	28	fed	feed	VERB
cet-2317	31	29	by	by	ADP
cet-2317	31	30	acetylene	acetylene	NOUN
cet-2317	31	31	–	–	PUNCT
cet-2317	31	32	helium	helium	NOUN
cet-2317	31	33	gas	gas	NOUN
cet-2317	31	34	mixture	mixture	NOUN
cet-2317	31	35	.	.	PUNCT
cet-2317	32	1	the	the	DET
cet-2317	32	2	temperature	temperature	NOUN
cet-2317	32	3	of	of	ADP
cet-2317	32	4	catalyst	catalyst	NOUN
cet-2317	32	5	bed	bed	NOUN
cet-2317	32	6	was	be	AUX
cet-2317	32	7	measured	measure	VERB
cet-2317	32	8	with	with	ADP
cet-2317	32	9	a	a	DET
cet-2317	32	10	k	k	PROPN
cet-2317	32	11	thermocouple	thermocouple	PROPN
cet-2317	32	12	located	locate	VERB
cet-2317	32	13	inside	inside	ADP
cet-2317	32	14	a	a	DET
cet-2317	32	15	third	third	ADJ
cet-2317	32	16	coaxial	coaxial	ADJ
cet-2317	32	17	quartz	quartz	NOUN
cet-2317	32	18	tube	tube	NOUN
cet-2317	32	19	.	.	PUNCT
cet-2317	33	1	the	the	DET
cet-2317	33	2	reactor	reactor	NOUN
cet-2317	33	3	was	be	AUX
cet-2317	33	4	heated	heat	VERB
cet-2317	33	5	by	by	ADP
cet-2317	33	6	an	an	DET
cet-2317	33	7	electrical	electrical	ADJ
cet-2317	33	8	oven	oven	NOUN
cet-2317	33	9	,	,	PUNCT
cet-2317	33	10	whose	whose	DET
cet-2317	33	11	temperature	temperature	NOUN
cet-2317	33	12	is	be	AUX
cet-2317	33	13	controlled	control	VERB
cet-2317	33	14	by	by	ADP
cet-2317	33	15	a	a	DET
cet-2317	33	16	temperature	temperature	NOUN
cet-2317	33	17	programmer	programmer	NOUN
cet-2317	33	18	–	–	PUNCT
cet-2317	33	19	controller	controller	NOUN
cet-2317	33	20	(	(	PUNCT
cet-2317	33	21	eurotherm	eurotherm	NOUN
cet-2317	33	22	2408	2408	NUM
cet-2317	33	23	)	)	PUNCT
cet-2317	33	24	.	.	PUNCT
cet-2317	34	1	cylinder	cylinder	NOUN
cet-2317	34	2	gases	gas	NOUN
cet-2317	34	3	(	(	PUNCT
cet-2317	34	4	99.998	99.998	NUM
cet-2317	34	5	pure	pure	ADJ
cet-2317	34	6	acetylene	acetylene	NOUN
cet-2317	34	7	and	and	CCONJ
cet-2317	34	8	99.9990	99.9990	NUM
cet-2317	34	9	pure	pure	ADJ
cet-2317	34	10	helium	helium	NOUN
cet-2317	34	11	)	)	PUNCT
cet-2317	34	12	were	be	AUX
cet-2317	34	13	mixed	mix	VERB
cet-2317	34	14	to	to	PART
cet-2317	34	15	obtain	obtain	VERB
cet-2317	34	16	the	the	DET
cet-2317	34	17	stream	stream	NOUN
cet-2317	34	18	to	to	PART
cet-2317	34	19	feed	feed	VERB
cet-2317	34	20	the	the	DET
cet-2317	34	21	reactor	reactor	NOUN
cet-2317	34	22	.	.	PUNCT
cet-2317	35	1	constant	constant	ADJ
cet-2317	35	2	flow	flow	NOUN
cet-2317	35	3	rate	rate	NOUN
cet-2317	35	4	of	of	ADP
cet-2317	35	5	each	each	DET
cet-2317	35	6	gas	gas	NOUN
cet-2317	35	7	was	be	AUX
cet-2317	35	8	provided	provide	VERB
cet-2317	35	9	by	by	ADP
cet-2317	35	10	mass	mass	NOUN
cet-2317	35	11	flow	flow	NOUN
cet-2317	35	12	controller	controller	NOUN
cet-2317	35	13	.	.	PUNCT
cet-2317	36	1	the	the	DET
cet-2317	36	2	reactor	reactor	NOUN
cet-2317	36	3	temperature	temperature	NOUN
cet-2317	36	4	was	be	AUX
cet-2317	36	5	increased	increase	VERB
cet-2317	36	6	from	from	ADP
cet-2317	36	7	298k	298k	PROPN
cet-2317	36	8	up	up	ADP
cet-2317	36	9	to	to	ADP
cet-2317	36	10	873k	873k	NOUN
cet-2317	36	11	under	under	ADP
cet-2317	36	12	helium	helium	NOUN
cet-2317	36	13	flow	flow	NOUN
cet-2317	36	14	and	and	CCONJ
cet-2317	36	15	then	then	ADV
cet-2317	36	16	a	a	DET
cet-2317	36	17	200	200	NUM
cet-2317	36	18	cm3	cm3	NOUN
cet-2317	36	19	/	/	SYM
cet-2317	36	20	min	min	NOUN
cet-2317	36	21	flow	flow	NOUN
cet-2317	36	22	rate	rate	NOUN
cet-2317	36	23	of	of	ADP
cet-2317	36	24	10	10	NUM
cet-2317	36	25	%	%	NOUN
cet-2317	36	26	acetylene	acetylene	NOUN
cet-2317	36	27	in	in	ADP
cet-2317	36	28	helium	helium	NOUN
cet-2317	36	29	was	be	AUX
cet-2317	36	30	introduced	introduce	VERB
cet-2317	36	31	in	in	ADP
cet-2317	36	32	the	the	DET
cet-2317	36	33	reactor	reactor	NOUN
cet-2317	36	34	during	during	ADP
cet-2317	36	35	5	5	NUM
cet-2317	36	36	min	min	NOUN
cet-2317	36	37	.	.	PROPN
cet-2317	37	1	after	after	ADP
cet-2317	37	2	this	this	DET
cet-2317	37	3	time	time	NOUN
cet-2317	37	4	,	,	PUNCT
cet-2317	37	5	the	the	DET
cet-2317	37	6	feed	feed	NOUN
cet-2317	37	7	flow	flow	NOUN
cet-2317	37	8	was	be	AUX
cet-2317	37	9	stopped	stop	VERB
cet-2317	37	10	and	and	CCONJ
cet-2317	37	11	the	the	DET
cet-2317	37	12	reactor	reactor	NOUN
cet-2317	37	13	was	be	AUX
cet-2317	37	14	cooled	cool	VERB
cet-2317	37	15	down	down	ADP
cet-2317	37	16	to	to	ADP
cet-2317	37	17	room	room	NOUN
cet-2317	37	18	temperature	temperature	NOUN
cet-2317	37	19	under	under	ADP
cet-2317	37	20	helium	helium	NOUN
cet-2317	37	21	flow	flow	NOUN
cet-2317	37	22	.	.	PUNCT
cet-2317	38	1	the	the	DET
cet-2317	38	2	images	image	NOUN
cet-2317	38	3	in	in	ADP
cet-2317	38	4	figure	figure	NOUN
cet-2317	38	5	1	1	NUM
cet-2317	38	6	obtained	obtain	VERB
cet-2317	38	7	with	with	ADP
cet-2317	38	8	a	a	DET
cet-2317	38	9	scanning	scanning	NOUN
cet-2317	38	10	electron	electron	NOUN
cet-2317	38	11	microscope	microscope	NOUN
cet-2317	38	12	(	(	PUNCT
cet-2317	38	13	sem	sem	NOUN
cet-2317	38	14	)	)	PUNCT
cet-2317	38	15	leo	leo	PROPN
cet-2317	38	16	420	420	NUM
cet-2317	38	17	allow	allow	VERB
cet-2317	38	18	the	the	DET
cet-2317	38	19	observation	observation	NOUN
cet-2317	38	20	of	of	ADP
cet-2317	38	21	nanotubes	nanotube	NOUN
cet-2317	38	22	inside	inside	ADP
cet-2317	38	23	the	the	DET
cet-2317	38	24	forest	forest	NOUN
cet-2317	38	25	.	.	PUNCT
cet-2317	39	1	their	their	PRON
cet-2317	39	2	outer	outer	ADJ
cet-2317	39	3	diameters	diameter	NOUN
cet-2317	39	4	are	be	AUX
cet-2317	39	5	in	in	ADP
cet-2317	39	6	the	the	DET
cet-2317	39	7	range	range	NOUN
cet-2317	39	8	20	20	NUM
cet-2317	39	9	-	-	SYM
cet-2317	39	10	50	50	NUM
cet-2317	39	11	nm	nm	NOUN
cet-2317	39	12	(	(	PUNCT
cet-2317	39	13	figure	figure	NOUN
cet-2317	39	14	1b	1b	NUM
cet-2317	39	15	)	)	PUNCT
cet-2317	39	16	,	,	PUNCT
cet-2317	39	17	their	their	PRON
cet-2317	39	18	length	length	NOUN
cet-2317	39	19	reached	reach	VERB
cet-2317	39	20	few	few	ADJ
cet-2317	39	21	millimetres	millimetre	NOUN
cet-2317	39	22	at	at	ADP
cet-2317	39	23	increasing	increase	VERB
cet-2317	39	24	time	time	NOUN
cet-2317	39	25	(	(	PUNCT
cet-2317	39	26	figure	figure	NOUN
cet-2317	39	27	1c	1c	NOUN
cet-2317	39	28	)	)	PUNCT
cet-2317	39	29	.	.	PUNCT
cet-2317	40	1	figure	figure	VERB
cet-2317	40	2	1	1	NUM
cet-2317	40	3	:	:	PUNCT
cet-2317	40	4	sem	sem	ADJ
cet-2317	40	5	image	image	NOUN
cet-2317	40	6	of	of	ADP
cet-2317	40	7	aln	aln	PROPN
cet-2317	40	8	covered	cover	VERB
cet-2317	40	9	by	by	ADP
cet-2317	40	10	a	a	DET
cet-2317	40	11	cnt	cnt	PROPN
cet-2317	40	12	forest	forest	NOUN
cet-2317	40	13	(	(	PUNCT
cet-2317	40	14	a	a	DET
cet-2317	40	15	,	,	PUNCT
cet-2317	40	16	b	b	NOUN
cet-2317	40	17	)	)	PUNCT
cet-2317	40	18	.	.	PUNCT
cet-2317	41	1	photo	photo	NOUN
cet-2317	41	2	of	of	ADP
cet-2317	41	3	aln	aln	PROPN
cet-2317	41	4	covered	cover	VERB
cet-2317	41	5	by	by	ADP
cet-2317	41	6	cnt	cnt	PROPN
cet-2317	41	7	forests	forest	NOUN
cet-2317	41	8	,	,	PUNCT
cet-2317	41	9	au	au	PROPN
cet-2317	41	10	covers	cover	VERB
cet-2317	41	11	some	some	DET
cet-2317	41	12	areas	area	NOUN
cet-2317	41	13	of	of	ADP
cet-2317	41	14	the	the	DET
cet-2317	41	15	devices	device	NOUN
cet-2317	41	16	.	.	PUNCT
cet-2317	42	1	in	in	ADP
cet-2317	42	2	order	order	NOUN
cet-2317	42	3	to	to	PART
cet-2317	42	4	estimate	estimate	VERB
cet-2317	42	5	our	our	PRON
cet-2317	42	6	cnts	cnts	PROPN
cet-2317	42	7	thermal	thermal	ADJ
cet-2317	42	8	conductivity	conductivity	NOUN
cet-2317	42	9	we	we	PRON
cet-2317	42	10	analyse	analyse	VERB
cet-2317	42	11	raman	raman	ADJ
cet-2317	42	12	spectra	spectra	ADJ
cet-2317	42	13	finger	finger	NOUN
cet-2317	42	14	print	print	NOUN
cet-2317	42	15	of	of	ADP
cet-2317	42	16	an	an	DET
cet-2317	42	17	isolated	isolated	ADJ
cet-2317	42	18	cnt	cnt	PROPN
cet-2317	42	19	obtained	obtain	VERB
cet-2317	42	20	at	at	ADP
cet-2317	42	21	873k	873k	NOUN
cet-2317	42	22	for	for	ADP
cet-2317	42	23	5	5	NUM
cet-2317	42	24	min	min	NOUN
cet-2317	42	25	(	(	PUNCT
cet-2317	42	26	figure	figure	NOUN
cet-2317	42	27	2	2	NUM
cet-2317	42	28	)	)	PUNCT
cet-2317	42	29	.	.	PUNCT
cet-2317	43	1	g	g	PROPN
cet-2317	43	2	peak	peak	NOUN
cet-2317	43	3	in	in	ADP
cet-2317	43	4	the	the	DET
cet-2317	43	5	graphite	graphite	NOUN
cet-2317	43	6	based	base	VERB
cet-2317	43	7	materials	material	NOUN
cet-2317	43	8	spectra	spectra	NOUN
cet-2317	43	9	manifest	manifest	VERB
cet-2317	43	10	a	a	DET
cet-2317	43	11	strong	strong	ADJ
cet-2317	43	12	temperature	temperature	NOUN
cet-2317	43	13	dependence	dependence	NOUN
cet-2317	43	14	and	and	CCONJ
cet-2317	43	15	allows	allow	VERB
cet-2317	43	16	to	to	PART
cet-2317	43	17	monitor	monitor	VERB
cet-2317	43	18	the	the	DET
cet-2317	43	19	local	local	ADJ
cet-2317	43	20	temperature	temperature	NOUN
cet-2317	43	21	change	change	NOUN
cet-2317	43	22	produced	produce	VERB
cet-2317	43	23	by	by	ADP
cet-2317	43	24	the	the	DET
cet-2317	43	25	variation	variation	NOUN
cet-2317	43	26	of	of	ADP
cet-2317	43	27	the	the	DET
cet-2317	43	28	laser	laser	NOUN
cet-2317	43	29	excitation	excitation	NOUN
cet-2317	43	30	power	power	NOUN
cet-2317	43	31	as	as	SCONJ
cet-2317	43	32	stated	state	VERB
cet-2317	43	33	by	by	ADP
cet-2317	43	34	balandin	balandin	VERB
cet-2317	43	35	et	et	PROPN
cet-2317	43	36	al	al	PROPN
cet-2317	43	37	.	.	PUNCT
cet-2317	44	1	(	(	PUNCT
cet-2317	44	2	balandin	balandin	VERB
cet-2317	44	3	et	et	PROPN
cet-2317	44	4	al	al	PROPN
cet-2317	44	5	.	.	PROPN
cet-2317	44	6	,	,	PUNCT
cet-2317	44	7	2008	2008	NUM
cet-2317	44	8	)	)	PUNCT
cet-2317	44	9	.	.	PUNCT
cet-2317	45	1	local	local	ADJ
cet-2317	45	2	temperature	temperature	NOUN
cet-2317	45	3	rise	rise	NOUN
cet-2317	45	4	as	as	ADP
cet-2317	45	5	a	a	DET
cet-2317	45	6	function	function	NOUN
cet-2317	45	7	of	of	ADP
cet-2317	45	8	the	the	DET
cet-2317	45	9	laser	laser	NOUN
cet-2317	45	10	power	power	NOUN
cet-2317	45	11	can	can	AUX
cet-2317	45	12	be	be	AUX
cet-2317	45	13	utilized	utilize	VERB
cet-2317	45	14	to	to	PART
cet-2317	45	15	extract	extract	VERB
cet-2317	45	16	the	the	DET
cet-2317	45	17	value	value	NOUN
cet-2317	45	18	of	of	ADP
cet-2317	45	19	the	the	DET
cet-2317	45	20	thermal	thermal	ADJ
cet-2317	45	21	conductivity	conductivity	NOUN
cet-2317	45	22	.	.	PUNCT
cet-2317	46	1	k	k	X
cet-2317	46	2	=	=	PUNCT
cet-2317	46	3	1/(2πh)(∆p/∆t	1/(2πh)(∆p/∆t	NUM
cet-2317	46	4	)	)	PUNCT
cet-2317	46	5	,	,	PUNCT
cet-2317	46	6	where	where	SCONJ
cet-2317	46	7	h	h	NOUN
cet-2317	46	8	is	be	AUX
cet-2317	46	9	cnt	cnt	PROPN
cet-2317	46	10	thickness	thickness	NOUN
cet-2317	46	11	and	and	CCONJ
cet-2317	46	12	the	the	DET
cet-2317	46	13	local	local	ADJ
cet-2317	46	14	temperature	temperature	NOUN
cet-2317	46	15	rise	rise	NOUN
cet-2317	46	16	∆t	∆t	NOUN
cet-2317	46	17	is	be	AUX
cet-2317	46	18	due	due	ADJ
cet-2317	46	19	to	to	ADP
cet-2317	46	20	the	the	DET
cet-2317	46	21	changing	change	VERB
cet-2317	46	22	heating	heating	NOUN
cet-2317	46	23	power	power	NOUN
cet-2317	46	24	∆p	∆p	PROPN
cet-2317	46	25	=	=	SYM
cet-2317	46	26	p2p1	p2p1	NOUN
cet-2317	46	27	.	.	PUNCT
cet-2317	47	1	because	because	SCONJ
cet-2317	47	2	the	the	DET
cet-2317	47	3	excitation	excitation	NOUN
cet-2317	47	4	power	power	NOUN
cet-2317	47	5	levels	level	NOUN
cet-2317	47	6	are	be	AUX
cet-2317	47	7	relatively	relatively	ADV
cet-2317	47	8	low	low	ADJ
cet-2317	47	9	,	,	PUNCT
cet-2317	47	10	the	the	DET
cet-2317	47	11	g	g	PROPN
cet-2317	47	12	peak	peak	NOUN
cet-2317	47	13	position	position	NOUN
cet-2317	47	14	linearly	linearly	ADV
cet-2317	47	15	depends	depend	VERB
cet-2317	47	16	on	on	ADP
cet-2317	47	17	the	the	DET
cet-2317	47	18	sample	sample	NOUN
cet-2317	47	19	temperature	temperature	NOUN
cet-2317	47	20	ω	ω	NOUN
cet-2317	47	21	=	=	NOUN
cet-2317	47	22	ωo+	ωo+	NOUN
cet-2317	47	23	xgt	xgt	NOUN
cet-2317	47	24	.	.	PUNCT
cet-2317	48	1	the	the	DET
cet-2317	48	2	final	final	ADJ
cet-2317	48	3	expression	expression	NOUN
cet-2317	48	4	for	for	ADP
cet-2317	48	5	the	the	DET
cet-2317	48	6	thermal	thermal	ADJ
cet-2317	48	7	conductivity	conductivity	NOUN
cet-2317	48	8	in	in	ADP
cet-2317	48	9	the	the	DET
cet-2317	48	10	radial	radial	ADJ
cet-2317	48	11	heat	heat	NOUN
cet-2317	48	12	wave	wave	NOUN
cet-2317	48	13	case	case	NOUN
cet-2317	48	14	can	can	AUX
cet-2317	48	15	be	be	AUX
cet-2317	48	16	written	write	VERB
cet-2317	48	17	as	as	ADP
cet-2317	48	18	:	:	PUNCT
cet-2317	48	19	k	k	PROPN
cet-2317	48	20	=	=	PUNCT
cet-2317	48	21	xg	xg	PROPN
cet-2317	48	22	1/(2hπ)(dω	1/(2hπ)(dω	NUM
cet-2317	48	23	/	/	SYM
cet-2317	48	24	dp	dp	NOUN
cet-2317	48	25	)	)	PUNCT
cet-2317	48	26	-1	-1	X
cet-2317	48	27	(	(	PUNCT
cet-2317	48	28	1	1	X
cet-2317	48	29	)	)	PUNCT
cet-2317	48	30	where	where	SCONJ
cet-2317	48	31	dω	dω	NOUN
cet-2317	48	32	is	be	AUX
cet-2317	48	33	a	a	DET
cet-2317	48	34	small	small	ADJ
cet-2317	48	35	shift	shift	NOUN
cet-2317	48	36	in	in	ADP
cet-2317	48	37	the	the	DET
cet-2317	48	38	g	g	PROPN
cet-2317	48	39	peak	peak	NOUN
cet-2317	48	40	position	position	NOUN
cet-2317	48	41	due	due	ADP
cet-2317	48	42	to	to	ADP
cet-2317	48	43	the	the	DET
cet-2317	48	44	variation	variation	NOUN
cet-2317	48	45	dp	dp	NOUN
cet-2317	48	46	in	in	ADP
cet-2317	48	47	the	the	DET
cet-2317	48	48	heating	heating	NOUN
cet-2317	48	49	power	power	NOUN
cet-2317	48	50	on	on	ADP
cet-2317	48	51	the	the	DET
cet-2317	48	52	sample	sample	NOUN
cet-2317	48	53	surface	surface	NOUN
cet-2317	48	54	.	.	PUNCT
cet-2317	49	1	we	we	PRON
cet-2317	49	2	obtained	obtain	VERB
cet-2317	49	3	a	a	DET
cet-2317	49	4	value	value	NOUN
cet-2317	49	5	of	of	ADP
cet-2317	49	6	1698,5	1698,5	NUM
cet-2317	49	7	w	w	PROPN
cet-2317	49	8	/	/	SYM
cet-2317	49	9	mk	mk	PROPN
cet-2317	49	10	.	.	PUNCT
cet-2317	50	1	a	a	DET
cet-2317	50	2	b	b	PROPN
cet-2317	50	3	c	c	PROPN
cet-2317	50	4	aln	aln	PROPN
cet-2317	50	5	substrate	substrate	NOUN
cet-2317	50	6	cnts	cnts	PROPN
cet-2317	50	7	forest	forest	PROPN
cet-2317	50	8	cnts	cnts	PROPN
cet-2317	50	9	cnts	cnts	PROPN
cet-2317	50	10	forest	forest	PROPN
cet-2317	50	11	1520	1520	NUM
cet-2317	50	12	figure	figure	NOUN
cet-2317	50	13	2	2	NUM
cet-2317	50	14	:	:	PUNCT
cet-2317	50	15	raman	raman	NOUN
cet-2317	50	16	spectra	spectra	NOUN
cet-2317	50	17	at	at	ADP
cet-2317	50	18	two	two	NUM
cet-2317	50	19	different	different	ADJ
cet-2317	50	20	laser	laser	NOUN
cet-2317	50	21	power	power	NOUN
cet-2317	50	22	.	.	PUNCT
cet-2317	51	1	3	3	X
cet-2317	51	2	.	.	X
cet-2317	51	3	numerical	numerical	ADJ
cet-2317	51	4	analysis	analysis	NOUN
cet-2317	51	5	the	the	DET
cet-2317	51	6	numerical	numerical	ADJ
cet-2317	51	7	analysis	analysis	NOUN
cet-2317	51	8	of	of	ADP
cet-2317	51	9	heat	heat	NOUN
cet-2317	51	10	transfer	transfer	NOUN
cet-2317	51	11	in	in	ADP
cet-2317	51	12	the	the	DET
cet-2317	51	13	flip	flip	NOUN
cet-2317	51	14	-	-	PUNCT
cet-2317	51	15	chip	chip	NOUN
cet-2317	51	16	device	device	NOUN
cet-2317	51	17	has	have	AUX
cet-2317	51	18	been	be	AUX
cet-2317	51	19	conducted	conduct	VERB
cet-2317	51	20	assuming	assume	VERB
cet-2317	51	21	the	the	DET
cet-2317	51	22	configuration	configuration	NOUN
cet-2317	51	23	and	and	CCONJ
cet-2317	51	24	geometrical	geometrical	ADJ
cet-2317	51	25	characteristics	characteristic	NOUN
cet-2317	51	26	shown	show	VERB
cet-2317	51	27	in	in	ADP
cet-2317	51	28	figure	figure	NOUN
cet-2317	51	29	3	3	NUM
cet-2317	51	30	:	:	PUNCT
cet-2317	51	31	chip	chip	NOUN
cet-2317	51	32	layout	layout	NOUN
cet-2317	51	33	(	(	PUNCT
cet-2317	51	34	phemt	phemt	PROPN
cet-2317	51	35	fet	fet	PROPN
cet-2317	51	36	in	in	ADP
cet-2317	51	37	gan	gan	PROPN
cet-2317	51	38	/	/	SYM
cet-2317	51	39	sapphire	sapphire	NOUN
cet-2317	51	40	technology	technology	NOUN
cet-2317	51	41	)	)	PUNCT
cet-2317	51	42	;	;	PUNCT
cet-2317	51	43	chip	chip	NOUN
cet-2317	51	44	size	size	NOUN
cet-2317	51	45	:	:	PUNCT
cet-2317	51	46	1	1	NUM
cet-2317	51	47	mm	mm	NOUN
cet-2317	51	48	x	x	SYM
cet-2317	51	49	0.8	0.8	NUM
cet-2317	51	50	mm	mm	NOUN
cet-2317	51	51	x	x	SYM
cet-2317	51	52	mm	mm	PROPN
cet-2317	51	53	0.33	0.33	NUM
cet-2317	51	54	;	;	PUNCT
cet-2317	51	55	gate	gate	NOUN
cet-2317	51	56	area	area	NOUN
cet-2317	51	57	:	:	PUNCT
cet-2317	51	58	6	6	NUM
cet-2317	51	59	rectangular	rectangular	ADJ
cet-2317	51	60	fingers	finger	NOUN
cet-2317	51	61	(	(	PUNCT
cet-2317	51	62	100	100	NUM
cet-2317	51	63	µm	µm	PART
cet-2317	51	64	x	x	SYM
cet-2317	51	65	1	1	NUM
cet-2317	51	66	µm	µm	NOUN
cet-2317	51	67	)	)	PUNCT
cet-2317	51	68	at	at	ADP
cet-2317	51	69	50	50	NUM
cet-2317	51	70	µm	µm	ADP
cet-2317	51	71	distance	distance	NOUN
cet-2317	51	72	;	;	PUNCT
cet-2317	51	73	sapphire	sapphire	NOUN
cet-2317	51	74	substrate	substrate	NOUN
cet-2317	51	75	thickness	thickness	NOUN
cet-2317	51	76	:	:	PUNCT
cet-2317	51	77	329	329	NUM
cet-2317	51	78	µm	µm	NUM
cet-2317	51	79	;	;	PUNCT
cet-2317	51	80	fet	fet	PROPN
cet-2317	51	81	mounted	mount	VERB
cet-2317	51	82	upside	upside	ADV
cet-2317	51	83	down	down	ADV
cet-2317	51	84	,	,	PUNCT
cet-2317	51	85	directly	directly	ADV
cet-2317	51	86	interconnected	interconnect	VERB
cet-2317	51	87	to	to	ADP
cet-2317	51	88	the	the	DET
cet-2317	51	89	substrate	substrate	NOUN
cet-2317	51	90	through	through	ADP
cet-2317	51	91	6	6	NUM
cet-2317	51	92	bumps	bump	NOUN
cet-2317	51	93	of	of	ADP
cet-2317	51	94	carbon	carbon	NOUN
cet-2317	51	95	nanotubes	nanotube	NOUN
cet-2317	51	96	:	:	PUNCT
cet-2317	51	97	bumps	bump	NOUN
cet-2317	51	98	dimensions	dimension	NOUN
cet-2317	51	99	are	be	AUX
cet-2317	51	100	100	100	NUM
cet-2317	51	101	x	x	SYM
cet-2317	51	102	40	40	NUM
cet-2317	51	103	µm	µm	NOUN
cet-2317	51	104	and	and	CCONJ
cet-2317	51	105	variable	variable	ADJ
cet-2317	51	106	thickness	thickness	NOUN
cet-2317	51	107	:	:	PUNCT
cet-2317	51	108	10	10	NUM
cet-2317	51	109	,	,	PUNCT
cet-2317	51	110	20	20	NUM
cet-2317	51	111	,	,	PUNCT
cet-2317	51	112	30	30	NUM
cet-2317	51	113	microns	micron	NOUN
cet-2317	51	114	;	;	PUNCT
cet-2317	51	115	aln	aln	NOUN
cet-2317	51	116	substrate	substrate	NOUN
cet-2317	51	117	1	1	NUM
cet-2317	51	118	cm	cm	NOUN
cet-2317	51	119	x	x	SYM
cet-2317	51	120	1	1	NUM
cet-2317	51	121	cm	cm	NOUN
cet-2317	51	122	x	x	SYM
cet-2317	51	123	0.6	0.6	NUM
cet-2317	51	124	mm	mm	NOUN
cet-2317	51	125	.	.	PUNCT
cet-2317	52	1	as	as	ADP
cet-2317	52	2	general	general	ADJ
cet-2317	52	3	approach	approach	NOUN
cet-2317	52	4	,	,	PUNCT
cet-2317	52	5	the	the	DET
cet-2317	52	6	following	follow	VERB
cet-2317	52	7	heat	heat	NOUN
cet-2317	52	8	transfer	transfer	NOUN
cet-2317	52	9	equation	equation	NOUN
cet-2317	52	10	has	have	AUX
cet-2317	52	11	been	be	AUX
cet-2317	52	12	considered	consider	VERB
cet-2317	52	13	in	in	ADP
cet-2317	52	14	each	each	DET
cet-2317	52	15	subdomain	subdomain	NOUN
cet-2317	52	16	:	:	PUNCT
cet-2317	52	17	𝜌𝑖𝐶𝑝𝑖	𝜌𝑖𝐶𝑝𝑖	ADJ
cet-2317	52	18	𝜕𝑇𝑖	𝜕𝑇𝑖	NOUN
cet-2317	52	19	𝜕𝑡	𝜕𝑡	PROPN
cet-2317	52	20	−	−	PROPN
cet-2317	52	21	∇	∇	X
cet-2317	52	22	∙	∙	PROPN
cet-2317	52	23	(	(	PUNCT
cet-2317	52	24	k𝑖∇t𝑖	k𝑖∇t𝑖	NUM
cet-2317	52	25	)	)	PUNCT
cet-2317	52	26	=	=	NOUN
cet-2317	53	1	q𝑖	q𝑖	NOUN
cet-2317	53	2	(	(	PUNCT
cet-2317	53	3	2	2	NUM
cet-2317	53	4	)	)	PUNCT
cet-2317	53	5	where	where	SCONJ
cet-2317	53	6	the	the	DET
cet-2317	53	7	subscript	subscript	NOUN
cet-2317	53	8	i	i	PRON
cet-2317	53	9	refers	refer	VERB
cet-2317	53	10	to	to	ADP
cet-2317	53	11	the	the	DET
cet-2317	53	12	subdomain	subdomain	NOUN
cet-2317	53	13	in	in	ADP
cet-2317	53	14	which	which	PRON
cet-2317	53	15	,	,	PUNCT
cet-2317	53	16	time	time	NOUN
cet-2317	53	17	-	-	PUNCT
cet-2317	53	18	by	by	ADP
cet-2317	53	19	-	-	PUNCT
cet-2317	53	20	time	time	NOUN
cet-2317	53	21	,	,	PUNCT
cet-2317	53	22	the	the	DET
cet-2317	53	23	heat	heat	NOUN
cet-2317	53	24	transfer	transfer	NOUN
cet-2317	53	25	equation	equation	NOUN
cet-2317	53	26	is	be	AUX
cet-2317	53	27	solved	solve	VERB
cet-2317	53	28	.	.	PUNCT
cet-2317	54	1	at	at	ADP
cet-2317	54	2	the	the	DET
cet-2317	54	3	boundary	boundary	NOUN
cet-2317	54	4	between	between	ADP
cet-2317	54	5	two	two	NUM
cet-2317	54	6	materials	material	NOUN
cet-2317	54	7	,	,	PUNCT
cet-2317	54	8	continuity	continuity	NOUN
cet-2317	54	9	of	of	ADP
cet-2317	54	10	temperature	temperature	NOUN
cet-2317	54	11	and	and	CCONJ
cet-2317	54	12	heat	heat	NOUN
cet-2317	54	13	flux	flux	NOUN
cet-2317	54	14	has	have	AUX
cet-2317	54	15	been	be	AUX
cet-2317	54	16	considered	consider	VERB
cet-2317	54	17	.	.	PUNCT
cet-2317	55	1	the	the	DET
cet-2317	55	2	heat	heat	NOUN
cet-2317	55	3	source	source	NOUN
cet-2317	55	4	term	term	NOUN
cet-2317	55	5	qi	qi	PROPN
cet-2317	55	6	has	have	AUX
cet-2317	55	7	been	be	AUX
cet-2317	55	8	considered	consider	VERB
cet-2317	55	9	null	null	ADJ
cet-2317	55	10	everywhere	everywhere	ADV
cet-2317	55	11	except	except	SCONJ
cet-2317	55	12	in	in	ADP
cet-2317	55	13	the	the	DET
cet-2317	55	14	fingers	finger	NOUN
cet-2317	55	15	.	.	PUNCT
cet-2317	56	1	the	the	DET
cet-2317	56	2	heat	heat	NOUN
cet-2317	56	3	transfer	transfer	NOUN
cet-2317	56	4	equation	equation	NOUN
cet-2317	56	5	(	(	PUNCT
cet-2317	56	6	eq	eq	NOUN
cet-2317	56	7	.	.	NOUN
cet-2317	56	8	2	2	NUM
cet-2317	56	9	)	)	PUNCT
cet-2317	56	10	has	have	AUX
cet-2317	56	11	been	be	AUX
cet-2317	56	12	solved	solve	VERB
cet-2317	56	13	in	in	ADP
cet-2317	56	14	fully	fully	ADV
cet-2317	56	15	3d	3d	NUM
cet-2317	56	16	domain	domain	NOUN
cet-2317	56	17	(	(	PUNCT
cet-2317	56	18	constituted	constitute	VERB
cet-2317	56	19	by	by	ADP
cet-2317	56	20	subdomains	subdomain	NOUN
cet-2317	56	21	representing	represent	VERB
cet-2317	56	22	the	the	DET
cet-2317	56	23	various	various	ADJ
cet-2317	56	24	materials	material	NOUN
cet-2317	56	25	involved	involve	VERB
cet-2317	56	26	in	in	ADP
cet-2317	56	27	the	the	DET
cet-2317	56	28	flip	flip	NOUN
cet-2317	56	29	-	-	PUNCT
cet-2317	56	30	chip	chip	NOUN
cet-2317	56	31	structure	structure	NOUN
cet-2317	56	32	)	)	PUNCT
cet-2317	56	33	and	and	CCONJ
cet-2317	56	34	at	at	ADP
cet-2317	56	35	stationary	stationary	ADJ
cet-2317	56	36	conditions	condition	NOUN
cet-2317	56	37	,	,	PUNCT
cet-2317	56	38	applying	apply	VERB
cet-2317	56	39	–	–	PUNCT
cet-2317	56	40	as	as	ADP
cet-2317	56	41	boundary	boundary	ADJ
cet-2317	56	42	conditions	condition	NOUN
cet-2317	56	43	–	–	PUNCT
cet-2317	56	44	a	a	DET
cet-2317	56	45	convective	convective	ADJ
cet-2317	56	46	heat	heat	NOUN
cet-2317	56	47	flux	flux	NOUN
cet-2317	56	48	toward	toward	ADP
cet-2317	56	49	the	the	DET
cet-2317	56	50	air	air	NOUN
cet-2317	56	51	surrounding	surround	VERB
cet-2317	56	52	the	the	DET
cet-2317	56	53	flip	flip	NOUN
cet-2317	56	54	-	-	PUNCT
cet-2317	56	55	chip	chip	NOUN
cet-2317	56	56	device	device	NOUN
cet-2317	56	57	,	,	PUNCT
cet-2317	56	58	except	except	SCONJ
cet-2317	56	59	for	for	ADP
cet-2317	56	60	lower	low	ADJ
cet-2317	56	61	surface	surface	NOUN
cet-2317	56	62	of	of	ADP
cet-2317	56	63	aln	aln	PROPN
cet-2317	56	64	layer	layer	NOUN
cet-2317	56	65	where	where	SCONJ
cet-2317	56	66	a	a	DET
cet-2317	56	67	constant	constant	ADJ
cet-2317	56	68	temperature	temperature	NOUN
cet-2317	56	69	of	of	ADP
cet-2317	56	70	313.15	313.15	NUM
cet-2317	56	71	k	k	PROPN
cet-2317	56	72	was	be	AUX
cet-2317	56	73	imposed	impose	VERB
cet-2317	56	74	.	.	PUNCT
cet-2317	57	1	of	of	ADP
cet-2317	57	2	course	course	NOUN
cet-2317	57	3	,	,	PUNCT
cet-2317	57	4	each	each	DET
cet-2317	57	5	component	component	NOUN
cet-2317	57	6	has	have	AUX
cet-2317	57	7	been	be	AUX
cet-2317	57	8	characterized	characterize	VERB
cet-2317	57	9	by	by	ADP
cet-2317	57	10	its	its	PRON
cet-2317	57	11	own	own	ADJ
cet-2317	57	12	thermal	thermal	ADJ
cet-2317	57	13	conductivity	conductivity	NOUN
cet-2317	57	14	.	.	PUNCT
cet-2317	58	1	in	in	ADP
cet-2317	58	2	the	the	DET
cet-2317	58	3	case	case	NOUN
cet-2317	58	4	of	of	ADP
cet-2317	58	5	fingers	finger	NOUN
cet-2317	58	6	,	,	PUNCT
cet-2317	58	7	a	a	DET
cet-2317	58	8	further	further	ADJ
cet-2317	58	9	term	term	NOUN
cet-2317	58	10	of	of	ADP
cet-2317	58	11	heat	heat	NOUN
cet-2317	58	12	source	source	NOUN
cet-2317	58	13	has	have	AUX
cet-2317	58	14	been	be	AUX
cet-2317	58	15	introduced	introduce	VERB
cet-2317	58	16	,	,	PUNCT
cet-2317	58	17	to	to	PART
cet-2317	58	18	take	take	VERB
cet-2317	58	19	into	into	ADP
cet-2317	58	20	account	account	NOUN
cet-2317	58	21	the	the	DET
cet-2317	58	22	3	3	NUM
cet-2317	58	23	w	w	NOUN
cet-2317	58	24	of	of	ADP
cet-2317	58	25	power	power	NOUN
cet-2317	58	26	generated	generate	VERB
cet-2317	58	27	by	by	ADP
cet-2317	58	28	the	the	DET
cet-2317	58	29	fingers	finger	NOUN
cet-2317	58	30	themselves	themselves	PRON
cet-2317	58	31	.	.	PUNCT
cet-2317	59	1	the	the	DET
cet-2317	59	2	set	set	NOUN
cet-2317	59	3	constituted	constitute	VERB
cet-2317	59	4	by	by	ADP
cet-2317	59	5	the	the	DET
cet-2317	59	6	heat	heat	NOUN
cet-2317	59	7	transfer	transfer	NOUN
cet-2317	59	8	equation	equation	NOUN
cet-2317	59	9	and	and	CCONJ
cet-2317	59	10	boundary	boundary	ADJ
cet-2317	59	11	conditions	condition	NOUN
cet-2317	59	12	equations	equation	NOUN
cet-2317	59	13	has	have	AUX
cet-2317	59	14	been	be	AUX
cet-2317	59	15	compiled	compile	VERB
cet-2317	59	16	and	and	CCONJ
cet-2317	59	17	solved	solve	VERB
cet-2317	59	18	by	by	ADP
cet-2317	59	19	means	mean	NOUN
cet-2317	59	20	of	of	ADP
cet-2317	59	21	commercial	commercial	ADJ
cet-2317	59	22	package	package	NOUN
cet-2317	59	23	comsol	comsol	NOUN
cet-2317	59	24	5.2	5.2	NUM
cet-2317	59	25	,	,	PUNCT
cet-2317	59	26	using	use	VERB
cet-2317	59	27	a	a	DET
cet-2317	59	28	mesh	mesh	NOUN
cet-2317	59	29	discretization	discretization	NOUN
cet-2317	59	30	to	to	PART
cet-2317	59	31	solve	solve	VERB
cet-2317	59	32	from	from	ADP
cet-2317	59	33	46843	46843	NUM
cet-2317	59	34	to	to	ADP
cet-2317	59	35	200000	200000	NUM
cet-2317	59	36	degrees	degree	NOUN
cet-2317	59	37	of	of	ADP
cet-2317	59	38	freedom	freedom	NOUN
cet-2317	59	39	.	.	PUNCT
cet-2317	60	1	the	the	DET
cet-2317	60	2	mathematical	mathematical	ADJ
cet-2317	60	3	set	set	NOUN
cet-2317	60	4	has	have	AUX
cet-2317	60	5	been	be	AUX
cet-2317	60	6	solved	solve	VERB
cet-2317	60	7	in	in	ADP
cet-2317	60	8	the	the	DET
cet-2317	60	9	fully	fully	ADV
cet-2317	60	10	3d	3d	ADJ
cet-2317	60	11	domain	domain	NOUN
cet-2317	60	12	in	in	ADP
cet-2317	60	13	order	order	NOUN
cet-2317	60	14	to	to	PART
cet-2317	60	15	reduce	reduce	VERB
cet-2317	60	16	errors	error	NOUN
cet-2317	60	17	coming	come	VERB
cet-2317	60	18	from	from	ADP
cet-2317	60	19	2d	2d	NUM
cet-2317	60	20	approximation	approximation	NOUN
cet-2317	60	21	in	in	ADP
cet-2317	60	22	term	term	NOUN
cet-2317	60	23	of	of	ADP
cet-2317	60	24	influence	influence	NOUN
cet-2317	60	25	of	of	ADP
cet-2317	60	26	gate	gate	ADJ
cet-2317	60	27	width	width	NOUN
cet-2317	60	28	on	on	ADP
cet-2317	60	29	self	self	NOUN
cet-2317	60	30	-	-	PUNCT
cet-2317	60	31	heating	heating	NOUN
cet-2317	60	32	end	end	NOUN
cet-2317	60	33	in	in	ADP
cet-2317	60	34	terms	term	NOUN
cet-2317	60	35	of	of	ADP
cet-2317	60	36	fingers	finger	NOUN
cet-2317	60	37	number	number	NOUN
cet-2317	60	38	for	for	ADP
cet-2317	60	39	the	the	DET
cet-2317	60	40	total	total	ADJ
cet-2317	60	41	thermal	thermal	ADJ
cet-2317	60	42	contribution	contribution	NOUN
cet-2317	60	43	(	(	PUNCT
cet-2317	60	44	bertoluzza	bertoluzza	NOUN
cet-2317	60	45	et	et	PROPN
cet-2317	60	46	al	al	PROPN
cet-2317	60	47	.	.	PROPN
cet-2317	60	48	,	,	PUNCT
cet-2317	60	49	2009	2009	NUM
cet-2317	60	50	)	)	PUNCT
cet-2317	60	51	.	.	PUNCT
cet-2317	61	1	the	the	DET
cet-2317	61	2	three	three	NUM
cet-2317	61	3	points	point	NOUN
cet-2317	61	4	in	in	ADP
cet-2317	61	5	the	the	DET
cet-2317	61	6	figure	figure	NOUN
cet-2317	61	7	below	below	ADV
cet-2317	61	8	are	be	AUX
cet-2317	61	9	used	use	VERB
cet-2317	61	10	as	as	ADP
cet-2317	61	11	temperature	temperature	NOUN
cet-2317	61	12	monitoring	monitoring	NOUN
cet-2317	61	13	points	point	NOUN
cet-2317	61	14	.	.	PUNCT
cet-2317	62	1	the	the	DET
cet-2317	62	2	positions	position	NOUN
cet-2317	62	3	were	be	AUX
cet-2317	62	4	chosen	choose	VERB
cet-2317	62	5	basing	base	VERB
cet-2317	62	6	on	on	ADP
cet-2317	62	7	the	the	DET
cet-2317	62	8	criticality	criticality	NOUN
cet-2317	62	9	of	of	ADP
cet-2317	62	10	spatial	spatial	ADJ
cet-2317	62	11	portion	portion	NOUN
cet-2317	62	12	in	in	ADP
cet-2317	62	13	order	order	NOUN
cet-2317	62	14	to	to	PART
cet-2317	62	15	maximize	maximize	VERB
cet-2317	62	16	their	their	PRON
cet-2317	62	17	thermal	thermal	ADJ
cet-2317	62	18	behaviour	behaviour	NOUN
cet-2317	62	19	.	.	PUNCT
cet-2317	63	1	figure	figure	VERB
cet-2317	63	2	3	3	NUM
cet-2317	63	3	:	:	PUNCT
cet-2317	63	4	sketch	sketch	NOUN
cet-2317	63	5	of	of	ADP
cet-2317	63	6	flip	flip	NOUN
cet-2317	63	7	-	-	PUNCT
cet-2317	63	8	chip	chip	NOUN
cet-2317	63	9	and	and	CCONJ
cet-2317	63	10	planar	planar	ADJ
cet-2317	63	11	view	view	NOUN
cet-2317	63	12	of	of	ADP
cet-2317	63	13	the	the	DET
cet-2317	63	14	device	device	NOUN
cet-2317	63	15	.	.	PUNCT
cet-2317	64	1	1427,12	1427,12	NUM
cet-2317	65	1	1577,88	1577,88	NUM
cet-2317	65	2	1725,92	1725,92	NUM
cet-2317	65	3	in	in	ADP
cet-2317	65	4	te	te	PROPN
cet-2317	65	5	n	n	CCONJ
cet-2317	65	6	si	si	INTJ
cet-2317	66	1	ty	ty	INTJ
cet-2317	66	2	(	(	PUNCT
cet-2317	66	3	a	a	DET
cet-2317	66	4	.u	.u	NOUN
cet-2317	66	5	.	.	PUNCT
cet-2317	66	6	)	)	PUNCT
cet-2317	67	1	raman	raman	NOUN
cet-2317	67	2	shift	shift	NOUN
cet-2317	67	3	cm-1	cm-1	NOUN
cet-2317	67	4	100	100	NUM
cet-2317	67	5	%	%	NOUN
cet-2317	67	6	50	50	NUM
cet-2317	67	7	%	%	NOUN
cet-2317	67	8	1521	1521	NUM
cet-2317	67	9	the	the	DET
cet-2317	67	10	assumptions	assumption	NOUN
cet-2317	67	11	made	make	VERB
cet-2317	67	12	for	for	ADP
cet-2317	67	13	the	the	DET
cet-2317	67	14	simulations	simulation	NOUN
cet-2317	67	15	were	be	AUX
cet-2317	67	16	:	:	PUNCT
cet-2317	67	17	the	the	DET
cet-2317	67	18	device	device	NOUN
cet-2317	67	19	dc	dc	PROPN
cet-2317	67	20	alimented	aliment	VERB
cet-2317	67	21	;	;	PUNCT
cet-2317	67	22	power	power	NOUN
cet-2317	67	23	dissipated	dissipate	VERB
cet-2317	67	24	by	by	ADP
cet-2317	67	25	fingers	finger	NOUN
cet-2317	67	26	:	:	PUNCT
cet-2317	67	27	3	3	NUM
cet-2317	67	28	watt	watt	NOUN
cet-2317	67	29	;	;	PUNCT
cet-2317	67	30	the	the	DET
cet-2317	67	31	heat	heat	NOUN
cet-2317	67	32	sink	sink	NOUN
cet-2317	67	33	was	be	AUX
cet-2317	67	34	simulated	simulate	VERB
cet-2317	67	35	by	by	ADP
cet-2317	67	36	the	the	DET
cet-2317	67	37	use	use	NOUN
cet-2317	67	38	of	of	ADP
cet-2317	67	39	a	a	DET
cet-2317	67	40	wall	wall	NOUN
cet-2317	67	41	at	at	ADP
cet-2317	67	42	constant	constant	ADJ
cet-2317	67	43	temperature	temperature	NOUN
cet-2317	67	44	of	of	ADP
cet-2317	67	45	40	40	NUM
cet-2317	67	46	°	°	NOUN
cet-2317	67	47	c	c	NOUN
cet-2317	67	48	;	;	PUNCT
cet-2317	67	49	cnt	cnt	PROPN
cet-2317	67	50	thermal	thermal	ADJ
cet-2317	67	51	conductivity	conductivity	NOUN
cet-2317	67	52	was	be	AUX
cet-2317	67	53	varied	varied	ADJ
cet-2317	67	54	in	in	ADP
cet-2317	67	55	the	the	DET
cet-2317	67	56	range	range	NOUN
cet-2317	67	57	:	:	PUNCT
cet-2317	67	58	60	60	NUM
cet-2317	67	59	-	-	SYM
cet-2317	67	60	3000	3000	NUM
cet-2317	67	61	w/(m	w/(m	NUM
cet-2317	67	62	k	k	NOUN
cet-2317	67	63	)	)	PUNCT
cet-2317	67	64	.	.	PUNCT
cet-2317	68	1	chip	chip	NOUN
cet-2317	68	2	was	be	AUX
cet-2317	68	3	installed	instal	VERB
cet-2317	68	4	in	in	ADP
cet-2317	68	5	the	the	DET
cet-2317	68	6	centre	centre	NOUN
cet-2317	68	7	of	of	ADP
cet-2317	68	8	the	the	DET
cet-2317	68	9	package	package	NOUN
cet-2317	68	10	.	.	PUNCT
cet-2317	69	1	the	the	DET
cet-2317	69	2	scope	scope	NOUN
cet-2317	69	3	of	of	ADP
cet-2317	69	4	the	the	DET
cet-2317	69	5	simulations	simulation	NOUN
cet-2317	69	6	was	be	AUX
cet-2317	69	7	to	to	PART
cet-2317	69	8	verify	verify	VERB
cet-2317	69	9	the	the	DET
cet-2317	69	10	cooling	cool	VERB
cet-2317	69	11	capacity	capacity	NOUN
cet-2317	69	12	of	of	ADP
cet-2317	69	13	the	the	DET
cet-2317	69	14	heat	heat	NOUN
cet-2317	69	15	spreaders	spreader	NOUN
cet-2317	69	16	in	in	ADP
cet-2317	69	17	different	different	ADJ
cet-2317	69	18	configurations	configuration	NOUN
cet-2317	69	19	by	by	ADP
cet-2317	69	20	monitoring	monitor	VERB
cet-2317	69	21	chip	chip	NOUN
cet-2317	69	22	temperature	temperature	NOUN
cet-2317	69	23	.	.	PUNCT
cet-2317	70	1	heat	heat	NOUN
cet-2317	70	2	transfers	transfer	NOUN
cet-2317	70	3	through	through	ADP
cet-2317	70	4	the	the	DET
cet-2317	70	5	mounted	mount	VERB
cet-2317	70	6	package	package	NOUN
cet-2317	70	7	to	to	ADP
cet-2317	70	8	the	the	DET
cet-2317	70	9	surroundings	surrounding	NOUN
cet-2317	70	10	for	for	ADP
cet-2317	70	11	conduction	conduction	NOUN
cet-2317	70	12	and	and	CCONJ
cet-2317	70	13	heat	heat	NOUN
cet-2317	70	14	dissipates	dissipate	VERB
cet-2317	70	15	from	from	ADP
cet-2317	70	16	all	all	DET
cet-2317	70	17	air	air	NOUN
cet-2317	70	18	-	-	PUNCT
cet-2317	70	19	exposed	expose	VERB
cet-2317	70	20	surfaces	surface	NOUN
cet-2317	70	21	for	for	ADP
cet-2317	70	22	natural	natural	ADJ
cet-2317	70	23	heat	heat	NOUN
cet-2317	70	24	convection	convection	NOUN
cet-2317	70	25	,	,	PUNCT
cet-2317	70	26	which	which	PRON
cet-2317	70	27	is	be	AUX
cet-2317	70	28	modelled	model	VERB
cet-2317	70	29	according	accord	VERB
cet-2317	70	30	to	to	ADP
cet-2317	70	31	newton	newton	PROPN
cet-2317	70	32	law	law	PROPN
cet-2317	70	33	.	.	PUNCT
cet-2317	71	1	the	the	DET
cet-2317	71	2	considered	consider	VERB
cet-2317	71	3	heat	heat	NOUN
cet-2317	71	4	transfer	transfer	NOUN
cet-2317	71	5	model	model	NOUN
cet-2317	71	6	,	,	PUNCT
cet-2317	71	7	based	base	VERB
cet-2317	71	8	on	on	ADP
cet-2317	71	9	fourier	fourier	ADJ
cet-2317	71	10	law	law	NOUN
cet-2317	71	11	for	for	ADP
cet-2317	71	12	heat	heat	NOUN
cet-2317	71	13	conduiction	conduiction	NOUN
cet-2317	71	14	,	,	PUNCT
cet-2317	71	15	can	can	AUX
cet-2317	71	16	efficiently	efficiently	ADV
cet-2317	71	17	and	and	CCONJ
cet-2317	71	18	accurately	accurately	ADV
cet-2317	71	19	describe	describe	VERB
cet-2317	71	20	the	the	DET
cet-2317	71	21	thermal	thermal	ADJ
cet-2317	71	22	effects	effect	NOUN
cet-2317	71	23	at	at	ADP
cet-2317	71	24	feature	feature	NOUN
cet-2317	71	25	length	length	NOUN
cet-2317	71	26	scales	scale	VERB
cet-2317	71	27	much	much	ADV
cet-2317	71	28	longer	long	ADJ
cet-2317	71	29	than	than	ADP
cet-2317	71	30	the	the	DET
cet-2317	71	31	mean	mean	ADJ
cet-2317	71	32	free	free	ADJ
cet-2317	71	33	path	path	NOUN
cet-2317	71	34	of	of	ADP
cet-2317	71	35	phonons	phonon	NOUN
cet-2317	71	36	(	(	PUNCT
cet-2317	71	37	i.e.	i.e.	X
cet-2317	71	38	,	,	PUNCT
cet-2317	71	39	200	200	NUM
cet-2317	71	40	-	-	SYM
cet-2317	71	41	300	300	NUM
cet-2317	71	42	nm	nm	NOUN
cet-2317	71	43	in	in	ADP
cet-2317	71	44	silicon	silicon	NOUN
cet-2317	71	45	)	)	PUNCT
cet-2317	71	46	as	as	ADV
cet-2317	71	47	also	also	ADV
cet-2317	71	48	investigated	investigate	VERB
cet-2317	71	49	by	by	ADP
cet-2317	71	50	zhang	zhang	PROPN
cet-2317	71	51	et	et	PROPN
cet-2317	71	52	al	al	PROPN
cet-2317	71	53	.	.	PUNCT
cet-2317	72	1	(	(	PUNCT
cet-2317	72	2	zhang	zhang	PROPN
cet-2317	72	3	et	et	PROPN
cet-2317	72	4	al	al	PROPN
cet-2317	72	5	.	.	PROPN
cet-2317	72	6	,	,	PUNCT
cet-2317	72	7	2011	2011	NUM
cet-2317	72	8	)	)	PUNCT
cet-2317	72	9	.	.	PUNCT
cet-2317	73	1	in	in	ADP
cet-2317	73	2	the	the	DET
cet-2317	73	3	nano	nano	NOUN
cet-2317	73	4	-	-	PUNCT
cet-2317	73	5	meter	meter	NOUN
cet-2317	73	6	regime	regime	NOUN
cet-2317	73	7	,	,	PUNCT
cet-2317	73	8	where	where	SCONJ
cet-2317	73	9	the	the	DET
cet-2317	73	10	mean	mean	ADJ
cet-2317	73	11	free	free	ADJ
cet-2317	73	12	path	path	NOUN
cet-2317	73	13	of	of	ADP
cet-2317	73	14	phonons	phonon	NOUN
cet-2317	73	15	approaches	approach	VERB
cet-2317	73	16	device	device	NOUN
cet-2317	73	17	feature	feature	NOUN
cet-2317	73	18	scale	scale	NOUN
cet-2317	73	19	,	,	PUNCT
cet-2317	73	20	ballistic	ballistic	ADJ
cet-2317	73	21	phonon	phonon	NOUN
cet-2317	73	22	transport	transport	NOUN
cet-2317	73	23	is	be	AUX
cet-2317	73	24	the	the	DET
cet-2317	73	25	primary	primary	ADJ
cet-2317	73	26	heat	heat	NOUN
cet-2317	73	27	transfer	transfer	NOUN
cet-2317	73	28	mechanism	mechanism	NOUN
cet-2317	73	29	.	.	PUNCT
cet-2317	74	1	since	since	SCONJ
cet-2317	74	2	the	the	DET
cet-2317	74	3	fourier	fourier	NOUN
cet-2317	74	4	model	model	NOUN
cet-2317	74	5	can	can	AUX
cet-2317	74	6	not	not	PART
cet-2317	74	7	model	model	VERB
cet-2317	74	8	this	this	DET
cet-2317	74	9	phenomenon	phenomenon	NOUN
cet-2317	74	10	accurately	accurately	ADV
cet-2317	74	11	,	,	PUNCT
cet-2317	74	12	other	other	ADJ
cet-2317	74	13	techniques	technique	NOUN
cet-2317	74	14	such	such	ADJ
cet-2317	74	15	as	as	ADP
cet-2317	74	16	the	the	DET
cet-2317	74	17	gray	gray	ADJ
cet-2317	74	18	phonon	phonon	NOUN
cet-2317	74	19	boltzmann	boltzmann	PROPN
cet-2317	74	20	transport	transport	NOUN
cet-2317	74	21	equation	equation	NOUN
cet-2317	74	22	(	(	PUNCT
cet-2317	74	23	bte	bte	NOUN
cet-2317	74	24	)	)	PUNCT
cet-2317	74	25	under	under	ADP
cet-2317	74	26	the	the	DET
cet-2317	74	27	relaxation	relaxation	NOUN
cet-2317	74	28	time	time	NOUN
cet-2317	74	29	approximation	approximation	NOUN
cet-2317	74	30	can	can	AUX
cet-2317	74	31	be	be	AUX
cet-2317	74	32	used	use	VERB
cet-2317	74	33	to	to	PART
cet-2317	74	34	model	model	VERB
cet-2317	74	35	the	the	DET
cet-2317	74	36	nanometer	nanometer	NOUN
cet-2317	74	37	device	device	NOUN
cet-2317	74	38	regions	region	NOUN
cet-2317	74	39	.	.	PUNCT
cet-2317	75	1	on	on	ADP
cet-2317	75	2	the	the	DET
cet-2317	75	3	other	other	ADJ
cet-2317	75	4	hand	hand	NOUN
cet-2317	75	5	,	,	PUNCT
cet-2317	75	6	our	our	PRON
cet-2317	75	7	dimensions	dimension	NOUN
cet-2317	75	8	are	be	AUX
cet-2317	75	9	larger	large	ADJ
cet-2317	75	10	than	than	SCONJ
cet-2317	75	11	mean	mean	VERB
cet-2317	75	12	free	free	ADJ
cet-2317	75	13	path	path	NOUN
cet-2317	75	14	of	of	ADP
cet-2317	75	15	phonons	phonon	NOUN
cet-2317	75	16	so	so	SCONJ
cet-2317	75	17	the	the	DET
cet-2317	75	18	fourier	fourier	NOUN
cet-2317	75	19	model	model	NOUN
cet-2317	75	20	can	can	AUX
cet-2317	75	21	accurately	accurately	ADV
cet-2317	75	22	describe	describe	VERB
cet-2317	75	23	our	our	PRON
cet-2317	75	24	device	device	NOUN
cet-2317	75	25	’s	’s	PART
cet-2317	75	26	thermal	thermal	ADJ
cet-2317	75	27	properties	property	NOUN
cet-2317	75	28	.	.	PUNCT
cet-2317	76	1	in	in	ADP
cet-2317	76	2	order	order	NOUN
cet-2317	76	3	to	to	PART
cet-2317	76	4	evaluate	evaluate	VERB
cet-2317	76	5	nanotubes	nanotube	NOUN
cet-2317	76	6	thermal	thermal	ADJ
cet-2317	76	7	influence	influence	NOUN
cet-2317	76	8	,	,	PUNCT
cet-2317	76	9	we	we	PRON
cet-2317	76	10	conducted	conduct	VERB
cet-2317	76	11	four	four	NUM
cet-2317	76	12	simulations	simulation	NOUN
cet-2317	76	13	set	set	VERB
cet-2317	76	14	by	by	ADP
cet-2317	76	15	varying	vary	VERB
cet-2317	76	16	the	the	DET
cet-2317	76	17	followings	following	NOUN
cet-2317	76	18	parameters	parameter	NOUN
cet-2317	76	19	:	:	PUNCT
cet-2317	76	20			DET
cet-2317	76	21	cnt	cnt	PROPN
cet-2317	76	22	’s	’s	PART
cet-2317	76	23	connection	connection	NOUN
cet-2317	76	24	height	height	NOUN
cet-2317	76	25	,	,	PUNCT
cet-2317	76	26			DET
cet-2317	76	27	cnt	cnt	PROPN
cet-2317	76	28	’s	’s	PART
cet-2317	76	29	thermal	thermal	ADJ
cet-2317	76	30	conductivity	conductivity	NOUN
cet-2317	76	31	;	;	PUNCT
cet-2317	76	32			PRON
cet-2317	76	33	cnt	cnt	PROPN
cet-2317	76	34	number	number	NOUN
cet-2317	76	35	and	and	CCONJ
cet-2317	76	36	spatial	spatial	ADJ
cet-2317	76	37	position	position	NOUN
cet-2317	76	38			DET
cet-2317	76	39	device	device	NOUN
cet-2317	76	40	’s	’s	PART
cet-2317	76	41	thermal	thermal	ADJ
cet-2317	76	42	conditions	condition	NOUN
cet-2317	76	43	.	.	PUNCT
cet-2317	77	1	cnt	cnt	PROPN
cet-2317	77	2	height	height	PROPN
cet-2317	77	3	significantly	significantly	ADV
cet-2317	77	4	influences	influence	VERB
cet-2317	77	5	the	the	DET
cet-2317	77	6	capacity	capacity	NOUN
cet-2317	77	7	of	of	ADP
cet-2317	77	8	heat	heat	NOUN
cet-2317	77	9	dissipation	dissipation	NOUN
cet-2317	77	10	in	in	ADP
cet-2317	77	11	the	the	DET
cet-2317	77	12	various	various	ADJ
cet-2317	77	13	points	point	NOUN
cet-2317	77	14	of	of	ADP
cet-2317	77	15	the	the	DET
cet-2317	77	16	channel	channel	NOUN
cet-2317	77	17	region	region	NOUN
cet-2317	77	18	.	.	PUNCT
cet-2317	78	1	results	result	NOUN
cet-2317	78	2	show	show	VERB
cet-2317	78	3	that	that	SCONJ
cet-2317	78	4	the	the	DET
cet-2317	78	5	bumps	bump	NOUN
cet-2317	78	6	of	of	ADP
cet-2317	78	7	smaller	small	ADJ
cet-2317	78	8	thickness	thickness	NOUN
cet-2317	78	9	(	(	PUNCT
cet-2317	78	10	10	10	NUM
cet-2317	78	11	µm	µm	NOUN
cet-2317	78	12	)	)	PUNCT
cet-2317	78	13	facilitate	facilitate	VERB
cet-2317	78	14	the	the	DET
cet-2317	78	15	dispersion	dispersion	NOUN
cet-2317	78	16	of	of	ADP
cet-2317	78	17	heat	heat	NOUN
cet-2317	78	18	towards	towards	ADP
cet-2317	78	19	the	the	DET
cet-2317	78	20	substrate	substrate	NOUN
cet-2317	78	21	of	of	ADP
cet-2317	78	22	aluminium	aluminium	NOUN
cet-2317	78	23	nitride	nitride	NOUN
cet-2317	78	24	.	.	PUNCT
cet-2317	79	1	figure	figure	VERB
cet-2317	79	2	4	4	NUM
cet-2317	79	3	reports	report	VERB
cet-2317	79	4	the	the	DET
cet-2317	79	5	temperature	temperature	NOUN
cet-2317	79	6	results	result	NOUN
cet-2317	79	7	of	of	ADP
cet-2317	79	8	the	the	DET
cet-2317	79	9	three	three	NUM
cet-2317	79	10	configurations	configuration	NOUN
cet-2317	79	11	(	(	PUNCT
cet-2317	79	12	20	20	NUM
cet-2317	79	13	,	,	PUNCT
cet-2317	79	14	30	30	NUM
cet-2317	79	15	,	,	PUNCT
cet-2317	79	16	40	40	NUM
cet-2317	79	17	microns	micron	NOUN
cet-2317	79	18	’	'	PUNCT
cet-2317	79	19	bumps	bump	NOUN
cet-2317	79	20	)	)	PUNCT
cet-2317	79	21	along	along	ADP
cet-2317	79	22	x	x	PART
cet-2317	79	23	coordinate	coordinate	NOUN
cet-2317	79	24	.	.	PUNCT
cet-2317	80	1	the	the	DET
cet-2317	80	2	figure	figure	NOUN
cet-2317	80	3	shows	show	VERB
cet-2317	80	4	the	the	DET
cet-2317	80	5	simulations	simulation	NOUN
cet-2317	80	6	conducted	conduct	VERB
cet-2317	80	7	using	use	VERB
cet-2317	80	8	a	a	DET
cet-2317	80	9	k	k	NOUN
cet-2317	80	10	value	value	NOUN
cet-2317	80	11	of	of	ADP
cet-2317	80	12	60	60	NUM
cet-2317	80	13	w/(m	w/(m	NUM
cet-2317	80	14	k	k	NOUN
cet-2317	80	15	)	)	PUNCT
cet-2317	80	16	.	.	PUNCT
cet-2317	81	1	no	no	DET
cet-2317	81	2	substantial	substantial	ADJ
cet-2317	81	3	differences	difference	NOUN
cet-2317	81	4	in	in	ADP
cet-2317	81	5	term	term	NOUN
cet-2317	81	6	of	of	ADP
cet-2317	81	7	thermal	thermal	ADJ
cet-2317	81	8	crosstalk	crosstalk	NOUN
cet-2317	81	9	between	between	ADP
cet-2317	81	10	the	the	DET
cet-2317	81	11	different	different	ADJ
cet-2317	81	12	configurations	configuration	NOUN
cet-2317	81	13	are	be	AUX
cet-2317	81	14	found	find	VERB
cet-2317	81	15	.	.	PUNCT
cet-2317	82	1	the	the	DET
cet-2317	82	2	lowest	low	ADJ
cet-2317	82	3	temperature	temperature	NOUN
cet-2317	82	4	was	be	AUX
cet-2317	82	5	recorded	record	VERB
cet-2317	82	6	,	,	PUNCT
cet-2317	82	7	as	as	SCONJ
cet-2317	82	8	expected	expect	VERB
cet-2317	82	9	considering	consider	VERB
cet-2317	82	10	the	the	DET
cet-2317	82	11	increased	increase	VERB
cet-2317	82	12	conduction	conduction	NOUN
cet-2317	82	13	path	path	NOUN
cet-2317	82	14	,	,	PUNCT
cet-2317	82	15	in	in	ADP
cet-2317	82	16	the	the	DET
cet-2317	82	17	case	case	NOUN
cet-2317	82	18	in	in	ADP
cet-2317	82	19	which	which	PRON
cet-2317	82	20	the	the	DET
cet-2317	82	21	height	height	NOUN
cet-2317	82	22	of	of	ADP
cet-2317	82	23	the	the	DET
cet-2317	82	24	connecting	connect	VERB
cet-2317	82	25	bumps	bump	NOUN
cet-2317	82	26	is	be	AUX
cet-2317	82	27	the	the	DET
cet-2317	82	28	smallest	small	ADJ
cet-2317	82	29	.	.	PUNCT
cet-2317	83	1	this	this	DET
cet-2317	83	2	effect	effect	NOUN
cet-2317	83	3	is	be	AUX
cet-2317	83	4	more	more	ADV
cet-2317	83	5	evident	evident	ADJ
cet-2317	83	6	for	for	ADP
cet-2317	83	7	low	low	ADJ
cet-2317	83	8	values	value	NOUN
cet-2317	83	9	of	of	ADP
cet-2317	83	10	thermal	thermal	ADJ
cet-2317	83	11	conductivity	conductivity	NOUN
cet-2317	83	12	(	(	PUNCT
cet-2317	83	13	about	about	ADV
cet-2317	83	14	60	60	NUM
cet-2317	83	15	w	w	NOUN
cet-2317	83	16	/	/	SYM
cet-2317	83	17	m	m	PROPN
cet-2317	83	18	k	k	NOUN
cet-2317	83	19	)	)	PUNCT
cet-2317	83	20	.	.	PUNCT
cet-2317	84	1	increasing	increase	VERB
cet-2317	84	2	thermal	thermal	ADJ
cet-2317	84	3	conductivity	conductivity	NOUN
cet-2317	84	4	,	,	PUNCT
cet-2317	84	5	thermal	thermal	ADJ
cet-2317	84	6	management	management	NOUN
cet-2317	84	7	is	be	AUX
cet-2317	84	8	improved	improve	VERB
cet-2317	84	9	,	,	PUNCT
cet-2317	84	10	all	all	DET
cet-2317	84	11	the	the	DET
cet-2317	84	12	monitoring	monitoring	NOUN
cet-2317	84	13	points	point	NOUN
cet-2317	84	14	show	show	VERB
cet-2317	84	15	a	a	DET
cet-2317	84	16	smaller	small	ADJ
cet-2317	84	17	temperature	temperature	NOUN
cet-2317	84	18	value	value	NOUN
cet-2317	84	19	but	but	CCONJ
cet-2317	84	20	this	this	DET
cet-2317	84	21	effect	effect	NOUN
cet-2317	84	22	is	be	AUX
cet-2317	84	23	mitigated	mitigate	VERB
cet-2317	84	24	after	after	ADP
cet-2317	84	25	a	a	DET
cet-2317	84	26	given	give	VERB
cet-2317	84	27	value	value	NOUN
cet-2317	84	28	of	of	ADP
cet-2317	84	29	k	k	NOUN
cet-2317	84	30	:	:	PUNCT
cet-2317	84	31	the	the	DET
cet-2317	84	32	temperatures	temperature	NOUN
cet-2317	84	33	reach	reach	VERB
cet-2317	84	34	practically	practically	ADV
cet-2317	84	35	constant	constant	ADJ
cet-2317	84	36	values	value	NOUN
cet-2317	84	37	at	at	ADP
cet-2317	84	38	a	a	DET
cet-2317	84	39	thermal	thermal	ADJ
cet-2317	84	40	conductivity	conductivity	NOUN
cet-2317	84	41	of	of	ADP
cet-2317	84	42	1200	1200	NUM
cet-2317	84	43	w/(m	w/(m	NUM
cet-2317	84	44	k	k	NOUN
cet-2317	84	45	)	)	PUNCT
cet-2317	84	46	,	,	PUNCT
cet-2317	84	47	see	see	VERB
cet-2317	84	48	figure	figure	NOUN
cet-2317	84	49	4	4	NUM
cet-2317	84	50	that	that	PRON
cet-2317	84	51	shows	show	VERB
cet-2317	84	52	the	the	DET
cet-2317	84	53	temperature	temperature	NOUN
cet-2317	84	54	of	of	ADP
cet-2317	84	55	monitoring	monitor	VERB
cet-2317	84	56	centre	centre	NOUN
cet-2317	84	57	point	point	NOUN
cet-2317	84	58	.	.	PUNCT
cet-2317	85	1	moreover	moreover	ADV
cet-2317	85	2	,	,	PUNCT
cet-2317	85	3	our	our	PRON
cet-2317	85	4	simulations	simulation	NOUN
cet-2317	85	5	show	show	VERB
cet-2317	85	6	that	that	SCONJ
cet-2317	85	7	after	after	ADP
cet-2317	85	8	this	this	DET
cet-2317	85	9	value	value	NOUN
cet-2317	85	10	,	,	PUNCT
cet-2317	85	11	bumps	bump	NOUN
cet-2317	85	12	thickness	thickness	NOUN
cet-2317	85	13	has	have	VERB
cet-2317	85	14	no	no	DET
cet-2317	85	15	influence	influence	NOUN
cet-2317	85	16	on	on	ADP
cet-2317	85	17	the	the	DET
cet-2317	85	18	monitor	monitor	NOUN
cet-2317	85	19	points	point	NOUN
cet-2317	85	20	temperature	temperature	NOUN
cet-2317	85	21	.	.	PUNCT
cet-2317	86	1	it	it	PRON
cet-2317	86	2	can	can	AUX
cet-2317	86	3	be	be	AUX
cet-2317	86	4	seen	see	VERB
cet-2317	86	5	from	from	ADP
cet-2317	86	6	the	the	DET
cet-2317	86	7	figures	figure	NOUN
cet-2317	86	8	that	that	SCONJ
cet-2317	86	9	cnts	cnt	NOUN
cet-2317	86	10	let	let	VERB
cet-2317	86	11	the	the	DET
cet-2317	86	12	temperature	temperature	NOUN
cet-2317	86	13	decrease	decrease	NOUN
cet-2317	86	14	of	of	ADP
cet-2317	86	15	about	about	ADV
cet-2317	86	16	30	30	NUM
cet-2317	86	17	°	°	SYM
cet-2317	86	18	c	c	NOUN
cet-2317	86	19	in	in	ADP
cet-2317	86	20	few	few	ADJ
cet-2317	86	21	microns	micron	NOUN
cet-2317	86	22	length	length	NOUN
cet-2317	86	23	.	.	PUNCT
cet-2317	87	1	figure	figure	VERB
cet-2317	87	2	4	4	NUM
cet-2317	87	3	:	:	PUNCT
cet-2317	87	4	temperature	temperature	NOUN
cet-2317	87	5	profile	profile	NOUN
cet-2317	87	6	along	along	ADP
cet-2317	87	7	x	x	PUNCT
cet-2317	87	8	axis	axis	NOUN
cet-2317	87	9	gained	gain	VERB
cet-2317	87	10	at	at	ADP
cet-2317	87	11	different	different	ADJ
cet-2317	87	12	bumps	bump	NOUN
cet-2317	87	13	heights	height	NOUN
cet-2317	87	14	and	and	CCONJ
cet-2317	87	15	with	with	ADP
cet-2317	87	16	k=60	k=60	PROPN
cet-2317	87	17	w	w	PROPN
cet-2317	87	18	/	/	SYM
cet-2317	87	19	mk	mk	PROPN
cet-2317	87	20	.	.	PUNCT
cet-2317	88	1	temperature	temperature	NOUN
cet-2317	88	2	profile	profile	NOUN
cet-2317	88	3	vs	vs	ADP
cet-2317	88	4	thermal	thermal	ADJ
cet-2317	88	5	conductivity	conductivity	NOUN
cet-2317	88	6	at	at	ADP
cet-2317	88	7	the	the	DET
cet-2317	88	8	device	device	NOUN
cet-2317	88	9	centre	centre	NOUN
cet-2317	88	10	for	for	ADP
cet-2317	88	11	different	different	ADJ
cet-2317	88	12	bumps	bump	NOUN
cet-2317	88	13	’	'	PUNCT
cet-2317	88	14	connection	connection	NOUN
cet-2317	88	15	height	height	NOUN
cet-2317	88	16	.	.	PUNCT
cet-2317	89	1	10	10	NUM
cet-2317	89	2	50	50	NUM
cet-2317	89	3	90	90	NUM
cet-2317	89	4	130	130	NUM
cet-2317	89	5	170	170	NUM
cet-2317	89	6	210	210	NUM
cet-2317	89	7	0,00	0,00	X
cet-2317	89	8	0,42	0,42	NUM
cet-2317	90	1	0,59	0,59	NUM
cet-2317	90	2	0,79	0,79	NOUN
cet-2317	90	3	t	t	PROPN
cet-2317	90	4	(	(	PUNCT
cet-2317	90	5	°	°	ADP
cet-2317	90	6	c	c	NOUN
cet-2317	90	7	)	)	PUNCT
cet-2317	90	8	10	10	NUM
cet-2317	90	9	micron	micron	NOUN
cet-2317	90	10	30	30	NUM
cet-2317	90	11	micron	micron	NOUN
cet-2317	90	12	20	20	NUM
cet-2317	90	13	micron	micron	NOUN
cet-2317	90	14	x	x	PUNCT
cet-2317	90	15	axis	axis	NOUN
cet-2317	90	16	70	70	NUM
cet-2317	90	17	110	110	NUM
cet-2317	90	18	150	150	NUM
cet-2317	90	19	190	190	NUM
cet-2317	90	20	50	50	NUM
cet-2317	90	21	1050	1050	NUM
cet-2317	90	22	2050	2050	NUM
cet-2317	90	23	t	t	NOUN
cet-2317	90	24	(	(	PUNCT
cet-2317	90	25	°	°	ADP
cet-2317	90	26	c	c	NOUN
cet-2317	90	27	)	)	PUNCT
cet-2317	90	28	10	10	NUM
cet-2317	90	29	micron	micron	NOUN
cet-2317	90	30	20	20	NUM
cet-2317	90	31	micron	micron	NOUN
cet-2317	90	32	30	30	NUM
cet-2317	90	33	micron	micron	NOUN
cet-2317	90	34	thermal	thermal	ADJ
cet-2317	90	35	conductivity	conductivity	NOUN
cet-2317	91	1	k	k	PROPN
cet-2317	91	2	(	(	PUNCT
cet-2317	91	3	w	w	PROPN
cet-2317	91	4	/	/	SYM
cet-2317	91	5	mk	mk	PROPN
cet-2317	91	6	)	)	PUNCT
cet-2317	91	7	1522	1522	NUM
cet-2317	91	8	our	our	PRON
cet-2317	91	9	simulation	simulation	NOUN
cet-2317	91	10	evidences	evidence	VERB
cet-2317	91	11	also	also	ADV
cet-2317	91	12	that	that	SCONJ
cet-2317	91	13	cnt	cnt	PROPN
cet-2317	91	14	bump	bump	VERB
cet-2317	91	15	width	width	ADJ
cet-2317	91	16	influences	influence	NOUN
cet-2317	91	17	heat	heat	NOUN
cet-2317	91	18	dissipation	dissipation	NOUN
cet-2317	91	19	ability	ability	NOUN
cet-2317	91	20	for	for	ADP
cet-2317	91	21	low	low	ADJ
cet-2317	91	22	values	value	NOUN
cet-2317	91	23	of	of	ADP
cet-2317	91	24	thermal	thermal	ADJ
cet-2317	91	25	conductivity	conductivity	NOUN
cet-2317	91	26	(	(	PUNCT
cet-2317	91	27	60	60	NUM
cet-2317	91	28	w	w	NOUN
cet-2317	91	29	/	/	SYM
cet-2317	91	30	m	m	PROPN
cet-2317	91	31	k	k	NOUN
cet-2317	91	32	)	)	PUNCT
cet-2317	91	33	;	;	PUNCT
cet-2317	91	34	after	after	SCONJ
cet-2317	91	35	a	a	DET
cet-2317	91	36	value	value	NOUN
cet-2317	91	37	of	of	ADP
cet-2317	91	38	about	about	ADV
cet-2317	91	39	1250	1250	NUM
cet-2317	91	40	w	w	PROPN
cet-2317	91	41	/	/	SYM
cet-2317	91	42	mk	mk	PROPN
cet-2317	91	43	,	,	PUNCT
cet-2317	91	44	a	a	DET
cet-2317	91	45	different	different	ADJ
cet-2317	91	46	bump	bump	NOUN
cet-2317	91	47	’s	’s	PART
cet-2317	91	48	width	width	NOUN
cet-2317	91	49	does	do	AUX
cet-2317	91	50	n’t	not	PART
cet-2317	91	51	change	change	VERB
cet-2317	91	52	thermal	thermal	ADJ
cet-2317	91	53	profile	profile	NOUN
cet-2317	91	54	.	.	PUNCT
cet-2317	92	1	in	in	ADP
cet-2317	92	2	order	order	NOUN
cet-2317	92	3	to	to	PART
cet-2317	92	4	improve	improve	VERB
cet-2317	92	5	conduction	conduction	NOUN
cet-2317	92	6	process	process	NOUN
cet-2317	92	7	and	and	CCONJ
cet-2317	92	8	prevent	prevent	VERB
cet-2317	92	9	risk	risk	NOUN
cet-2317	92	10	caused	cause	VERB
cet-2317	92	11	from	from	ADP
cet-2317	92	12	negative	negative	ADJ
cet-2317	92	13	-	-	PUNCT
cet-2317	92	14	bias	bias	NOUN
cet-2317	92	15	temperature	temperature	NOUN
cet-2317	92	16	instability	instability	NOUN
cet-2317	92	17	a	a	DET
cet-2317	92	18	simulation	simulation	NOUN
cet-2317	92	19	was	be	AUX
cet-2317	92	20	also	also	ADV
cet-2317	92	21	performed	perform	VERB
cet-2317	92	22	covering	cover	VERB
cet-2317	92	23	all	all	DET
cet-2317	92	24	chip	chip	NOUN
cet-2317	92	25	surface	surface	NOUN
cet-2317	92	26	with	with	ADP
cet-2317	92	27	a	a	DET
cet-2317	92	28	fine	fine	ADJ
cet-2317	92	29	layer	layer	NOUN
cet-2317	92	30	of	of	ADP
cet-2317	92	31	gold	gold	NOUN
cet-2317	92	32	.	.	PUNCT
cet-2317	93	1	all	all	DET
cet-2317	93	2	temperatures	temperature	NOUN
cet-2317	93	3	are	be	AUX
cet-2317	93	4	much	much	ADV
cet-2317	93	5	lower	low	ADJ
cet-2317	93	6	than	than	ADP
cet-2317	93	7	that	that	PRON
cet-2317	93	8	measured	measure	VERB
cet-2317	93	9	during	during	ADP
cet-2317	93	10	previous	previous	ADJ
cet-2317	93	11	simulations	simulation	NOUN
cet-2317	93	12	,	,	PUNCT
cet-2317	93	13	see	see	VERB
cet-2317	93	14	figure	figure	NOUN
cet-2317	93	15	5	5	NUM
cet-2317	93	16	.	.	PUNCT
cet-2317	94	1	the	the	DET
cet-2317	94	2	au	au	ADJ
cet-2317	94	3	layer	layer	NOUN
cet-2317	94	4	results	result	VERB
cet-2317	94	5	able	able	ADJ
cet-2317	94	6	to	to	PART
cet-2317	94	7	reduce	reduce	VERB
cet-2317	94	8	the	the	DET
cet-2317	94	9	occurrence	occurrence	NOUN
cet-2317	94	10	of	of	ADP
cet-2317	94	11	peak	peak	NOUN
cet-2317	94	12	over	over	ADP
cet-2317	94	13	-	-	PUNCT
cet-2317	94	14	temperature	temperature	NOUN
cet-2317	94	15	along	along	ADP
cet-2317	94	16	the	the	DET
cet-2317	94	17	chip	chip	NOUN
cet-2317	94	18	,	,	PUNCT
cet-2317	94	19	increasing	increase	VERB
cet-2317	94	20	the	the	DET
cet-2317	94	21	heat	heat	NOUN
cet-2317	94	22	dissipation	dissipation	NOUN
cet-2317	94	23	area	area	NOUN
cet-2317	94	24	and	and	CCONJ
cet-2317	94	25	improving	improve	VERB
cet-2317	94	26	the	the	DET
cet-2317	94	27	dissipation	dissipation	NOUN
cet-2317	94	28	efficiency	efficiency	NOUN
cet-2317	94	29	in	in	ADP
cet-2317	94	30	a	a	DET
cet-2317	94	31	simplest	simple	ADJ
cet-2317	94	32	way	way	NOUN
cet-2317	94	33	than	than	ADP
cet-2317	94	34	the	the	DET
cet-2317	94	35	complex	complex	ADJ
cet-2317	94	36	3d	3d	NOUN
cet-2317	94	37	cnt	cnt	PROPN
cet-2317	94	38	architecture	architecture	NOUN
cet-2317	94	39	reported	report	VERB
cet-2317	94	40	by	by	ADP
cet-2317	94	41	zhang	zhang	PROPN
cet-2317	94	42	et	et	PROPN
cet-2317	94	43	al	al	PROPN
cet-2317	94	44	.	.	PUNCT
cet-2317	95	1	(	(	PUNCT
cet-2317	95	2	zhang	zhang	PROPN
cet-2317	95	3	et	et	PROPN
cet-2317	95	4	al	al	PROPN
cet-2317	95	5	.	.	PROPN
cet-2317	95	6	,	,	PUNCT
cet-2317	95	7	2011	2011	NUM
cet-2317	95	8	)	)	PUNCT
cet-2317	95	9	.	.	PUNCT
cet-2317	96	1	figure	figure	VERB
cet-2317	96	2	5	5	NUM
cet-2317	96	3	:	:	PUNCT
cet-2317	96	4	temperature	temperature	NOUN
cet-2317	96	5	profile	profile	NOUN
cet-2317	96	6	along	along	ADV
cet-2317	96	7	x	x	PUNCT
cet-2317	96	8	axis	axis	NOUN
cet-2317	96	9	at	at	ADP
cet-2317	96	10	bumps	bump	NOUN
cet-2317	96	11	heights	height	NOUN
cet-2317	96	12	of	of	ADP
cet-2317	96	13	10	10	NUM
cet-2317	96	14	µm	µm	NOUN
cet-2317	96	15	,	,	PUNCT
cet-2317	96	16	with	with	ADP
cet-2317	96	17	k=60w	k=60w	PROPN
cet-2317	96	18	/	/	SYM
cet-2317	96	19	mk	mk	PROPN
cet-2317	96	20	and	and	CCONJ
cet-2317	96	21	au	au	ADJ
cet-2317	96	22	layer	layer	NOUN
cet-2317	96	23	.	.	PUNCT
cet-2317	97	1	for	for	ADP
cet-2317	97	2	a	a	DET
cet-2317	97	3	k	k	PROPN
cet-2317	97	4	value	value	NOUN
cet-2317	97	5	of	of	ADP
cet-2317	97	6	300	300	NUM
cet-2317	97	7	w	w	PROPN
cet-2317	97	8	/	/	SYM
cet-2317	97	9	mk	mk	PROPN
cet-2317	97	10	,	,	PUNCT
cet-2317	97	11	the	the	DET
cet-2317	97	12	maximum	maximum	ADJ
cet-2317	97	13	junction	junction	NOUN
cet-2317	97	14	temperature	temperature	NOUN
cet-2317	97	15	gained	gain	VERB
cet-2317	97	16	in	in	ADP
cet-2317	97	17	the	the	DET
cet-2317	97	18	chip	chip	NOUN
cet-2317	97	19	is	be	AUX
cet-2317	97	20	less	less	ADJ
cet-2317	97	21	than	than	ADP
cet-2317	97	22	85	85	NUM
cet-2317	97	23	°	°	NOUN
cet-2317	97	24	c	c	NOUN
cet-2317	97	25	,	,	PUNCT
cet-2317	97	26	see	see	VERB
cet-2317	97	27	figure	figure	NOUN
cet-2317	97	28	6	6	NUM
cet-2317	97	29	.	.	PUNCT
cet-2317	98	1	in	in	ADP
cet-2317	98	2	all	all	DET
cet-2317	98	3	the	the	DET
cet-2317	98	4	conditions	condition	NOUN
cet-2317	98	5	the	the	DET
cet-2317	98	6	highest	high	ADJ
cet-2317	98	7	temperatures	temperature	NOUN
cet-2317	98	8	were	be	AUX
cet-2317	98	9	reached	reach	VERB
cet-2317	98	10	in	in	ADP
cet-2317	98	11	the	the	DET
cet-2317	98	12	center	center	NOUN
cet-2317	98	13	of	of	ADP
cet-2317	98	14	the	the	DET
cet-2317	98	15	package	package	NOUN
cet-2317	98	16	,	,	PUNCT
cet-2317	98	17	likely	likely	ADJ
cet-2317	98	18	due	due	ADP
cet-2317	98	19	to	to	ADP
cet-2317	98	20	its	its	PRON
cet-2317	98	21	symmetry	symmetry	NOUN
cet-2317	98	22	.	.	PUNCT
cet-2317	99	1	therefore	therefore	ADV
cet-2317	99	2	the	the	DET
cet-2317	99	3	central	central	ADJ
cet-2317	99	4	points	point	NOUN
cet-2317	99	5	are	be	AUX
cet-2317	99	6	the	the	DET
cet-2317	99	7	critical	critical	ADJ
cet-2317	99	8	ones	one	NOUN
cet-2317	99	9	for	for	ADP
cet-2317	99	10	reliability	reliability	NOUN
cet-2317	99	11	issues	issue	NOUN
cet-2317	99	12	.	.	PUNCT
cet-2317	100	1	we	we	PRON
cet-2317	100	2	also	also	ADV
cet-2317	100	3	tested	test	VERB
cet-2317	100	4	the	the	DET
cet-2317	100	5	introduction	introduction	NOUN
cet-2317	100	6	of	of	ADP
cet-2317	100	7	a	a	DET
cet-2317	100	8	major	major	ADJ
cet-2317	100	9	number	number	NOUN
cet-2317	100	10	of	of	ADP
cet-2317	100	11	cnt	cnt	PROPN
cet-2317	100	12	’s	’s	PART
cet-2317	100	13	bumps	bump	NOUN
cet-2317	100	14	with	with	ADP
cet-2317	100	15	a	a	DET
cet-2317	100	16	k	k	NOUN
cet-2317	100	17	value	value	NOUN
cet-2317	100	18	of	of	ADP
cet-2317	100	19	300	300	NUM
cet-2317	100	20	w	w	NOUN
cet-2317	100	21	/	/	SYM
cet-2317	100	22	mk	mk	PROPN
cet-2317	100	23	,	,	PUNCT
cet-2317	100	24	see	see	VERB
cet-2317	100	25	figure	figure	NOUN
cet-2317	100	26	7	7	NUM
cet-2317	100	27	left	left	ADJ
cet-2317	100	28	side	side	NOUN
cet-2317	100	29	.	.	PUNCT
cet-2317	101	1	increasing	increase	VERB
cet-2317	101	2	bumps	bump	NOUN
cet-2317	101	3	number	number	NOUN
cet-2317	101	4	,	,	PUNCT
cet-2317	101	5	thermal	thermal	ADJ
cet-2317	101	6	management	management	NOUN
cet-2317	101	7	results	result	NOUN
cet-2317	101	8	improved	improve	VERB
cet-2317	101	9	,	,	PUNCT
cet-2317	101	10	in	in	ADP
cet-2317	101	11	terms	term	NOUN
cet-2317	101	12	of	of	ADP
cet-2317	101	13	maximum	maximum	ADJ
cet-2317	101	14	temperature	temperature	NOUN
cet-2317	101	15	reached	reach	VERB
cet-2317	101	16	in	in	ADP
cet-2317	101	17	the	the	DET
cet-2317	101	18	device	device	NOUN
cet-2317	101	19	as	as	ADP
cet-2317	101	20	junction	junction	NOUN
cet-2317	101	21	temperature	temperature	NOUN
cet-2317	101	22	and	and	CCONJ
cet-2317	101	23	maximum	maximum	ADJ
cet-2317	101	24	temperature	temperature	NOUN
cet-2317	101	25	differences	difference	NOUN
cet-2317	101	26	along	along	ADP
cet-2317	101	27	x	x	NOUN
cet-2317	101	28	axis	axis	NOUN
cet-2317	101	29	,	,	PUNCT
cet-2317	101	30	see	see	VERB
cet-2317	101	31	figure	figure	NOUN
cet-2317	101	32	7	7	NUM
cet-2317	101	33	right	right	ADJ
cet-2317	101	34	side	side	NOUN
cet-2317	101	35	.	.	PUNCT
cet-2317	102	1	considering	consider	VERB
cet-2317	102	2	the	the	DET
cet-2317	102	3	case	case	NOUN
cet-2317	102	4	of	of	ADP
cet-2317	102	5	more	more	ADJ
cet-2317	102	6	devices	device	NOUN
cet-2317	102	7	working	work	VERB
cet-2317	102	8	together	together	ADV
cet-2317	102	9	,	,	PUNCT
cet-2317	102	10	we	we	PRON
cet-2317	102	11	performed	perform	VERB
cet-2317	102	12	also	also	ADV
cet-2317	102	13	simulations	simulation	NOUN
cet-2317	102	14	in	in	ADP
cet-2317	102	15	the	the	DET
cet-2317	102	16	absence	absence	NOUN
cet-2317	102	17	of	of	ADP
cet-2317	102	18	natural	natural	ADJ
cet-2317	102	19	convection	convection	NOUN
cet-2317	102	20	towards	towards	ADP
cet-2317	102	21	lateral	lateral	ADJ
cet-2317	102	22	walls	wall	NOUN
cet-2317	102	23	of	of	ADP
cet-2317	102	24	the	the	DET
cet-2317	102	25	device	device	NOUN
cet-2317	102	26	.	.	PUNCT
cet-2317	103	1	we	we	PRON
cet-2317	103	2	found	find	VERB
cet-2317	103	3	that	that	SCONJ
cet-2317	103	4	also	also	ADV
cet-2317	103	5	in	in	ADP
cet-2317	103	6	this	this	DET
cet-2317	103	7	case	case	NOUN
cet-2317	103	8	cnt	cnt	PROPN
cet-2317	103	9	’s	’s	PART
cet-2317	103	10	bumps	bump	NOUN
cet-2317	103	11	showed	show	VERB
cet-2317	103	12	improved	improved	ADJ
cet-2317	103	13	thermal	thermal	ADJ
cet-2317	103	14	management	management	NOUN
cet-2317	103	15	performance	performance	NOUN
cet-2317	103	16	also	also	ADV
cet-2317	103	17	if	if	SCONJ
cet-2317	103	18	compared	compare	VERB
cet-2317	103	19	with	with	ADP
cet-2317	103	20	a	a	DET
cet-2317	103	21	common	common	ADJ
cet-2317	103	22	flip	flip	ADJ
cet-2317	103	23	chip	chip	NOUN
cet-2317	103	24	device	device	NOUN
cet-2317	103	25	,	,	PUNCT
cet-2317	103	26	with	with	ADP
cet-2317	103	27	cu6sn5	cu6sn5	PROPN
cet-2317	103	28	solders	solders	PROPN
cet-2317	103	29	bumps	bump	NOUN
cet-2317	103	30	in	in	ADP
cet-2317	103	31	a	a	DET
cet-2317	103	32	forced	force	VERB
cet-2317	103	33	convection	convection	NOUN
cet-2317	103	34	regime	regime	NOUN
cet-2317	103	35	,	,	PUNCT
cet-2317	103	36	1	1	NUM
cet-2317	103	37	m	m	PROPN
cet-2317	103	38	/	/	SYM
cet-2317	103	39	s	s	PROPN
cet-2317	103	40	,	,	PUNCT
cet-2317	103	41	of	of	ADP
cet-2317	103	42	transformer	transformer	ADJ
cet-2317	103	43	oil	oil	NOUN
cet-2317	103	44	at	at	ADP
cet-2317	103	45	273	273	NUM
cet-2317	103	46	k.	k.	NOUN
cet-2317	103	47	figure	figure	NOUN
cet-2317	103	48	6	6	NUM
cet-2317	103	49	:	:	PUNCT
cet-2317	103	50	left	leave	VERB
cet-2317	103	51	side	side	NOUN
cet-2317	103	52	:	:	PUNCT
cet-2317	103	53	device	device	NOUN
cet-2317	103	54	temperature	temperature	NOUN
cet-2317	103	55	with	with	ADP
cet-2317	103	56	bumps	bump	NOUN
cet-2317	103	57	’	'	PUNCT
cet-2317	103	58	connection	connection	NOUN
cet-2317	103	59	height	height	NOUN
cet-2317	103	60	of	of	ADP
cet-2317	103	61	10	10	NUM
cet-2317	103	62	µm	µm	NOUN
cet-2317	103	63	and	and	CCONJ
cet-2317	103	64	with	with	ADP
cet-2317	103	65	au	au	ADJ
cet-2317	103	66	layer	layer	NOUN
cet-2317	103	67	kbumps=300	kbumps=300	INTJ
cet-2317	103	68	w	w	PROPN
cet-2317	103	69	/	/	SYM
cet-2317	103	70	mk	mk	PROPN
cet-2317	103	71	.	.	PUNCT
cet-2317	104	1	right	right	ADJ
cet-2317	104	2	side	side	NOUN
cet-2317	104	3	:	:	PUNCT
cet-2317	104	4	temperature	temperature	NOUN
cet-2317	104	5	profile	profile	NOUN
cet-2317	104	6	along	along	ADV
cet-2317	104	7	x	x	PUNCT
cet-2317	104	8	coordinate	coordinate	NOUN
cet-2317	104	9	(	(	PUNCT
cet-2317	104	10	bumps	bump	NOUN
cet-2317	104	11	height	height	NOUN
cet-2317	104	12	of	of	ADP
cet-2317	104	13	10	10	NUM
cet-2317	104	14	µm	µm	NUM
cet-2317	104	15	)	)	PUNCT
cet-2317	104	16	.	.	PUNCT
cet-2317	105	1	0	0	NUM
cet-2317	106	1	40	40	NUM
cet-2317	106	2	80	80	NUM
cet-2317	106	3	120	120	NUM
cet-2317	106	4	0,00	0,00	NUM
cet-2317	106	5	0,40	0,40	NUM
cet-2317	106	6	0,56	0,56	NOUN
cet-2317	106	7	0,72	0,72	X
cet-2317	107	1	t	t	PROPN
cet-2317	107	2	(	(	PUNCT
cet-2317	107	3	°	°	ADP
cet-2317	107	4	c	c	NOUN
cet-2317	107	5	)	)	PUNCT
cet-2317	107	6	x	x	SYM
cet-2317	107	7	axis	axis	VERB
cet-2317	107	8	40	40	NUM
cet-2317	107	9	80	80	NUM
cet-2317	107	10	120	120	NUM
cet-2317	107	11	0,44	0,44	NOUN
cet-2317	107	12	0,64	0,64	NUM
cet-2317	108	1	t	t	PROPN
cet-2317	108	2	(	(	PUNCT
cet-2317	108	3	°	°	ADP
cet-2317	108	4	c	c	NOUN
cet-2317	108	5	)	)	PUNCT
cet-2317	108	6	k=60w	k=60w	PROPN
cet-2317	108	7	/	/	SYM
cet-2317	108	8	mk	mk	PROPN
cet-2317	108	9	k=300w	k=300w	NOUN
cet-2317	108	10	/	/	SYM
cet-2317	108	11	mk	mk	NOUN
cet-2317	108	12	x	x	PUNCT
cet-2317	108	13	axis	axis	ADJ
cet-2317	108	14	1523	1523	NUM
cet-2317	108	15	figure	figure	NOUN
cet-2317	108	16	7	7	NUM
cet-2317	108	17	:	:	PUNCT
cet-2317	108	18	temperature	temperature	NOUN
cet-2317	108	19	result	result	NOUN
cet-2317	108	20	differences	difference	NOUN
cet-2317	108	21	between	between	ADP
cet-2317	108	22	6	6	NUM
cet-2317	108	23	and	and	CCONJ
cet-2317	108	24	13	13	NUM
cet-2317	108	25	bumps	bump	NOUN
cet-2317	108	26	simulations	simulation	NOUN
cet-2317	108	27	4	4	NUM
cet-2317	108	28	.	.	PUNCT
cet-2317	109	1	conclusions	conclusion	NOUN
cet-2317	109	2	cnts	cnts	PROPN
cet-2317	109	3	have	have	AUX
cet-2317	109	4	been	be	AUX
cet-2317	109	5	successful	successful	ADJ
cet-2317	109	6	grown	grow	VERB
cet-2317	109	7	on	on	ADP
cet-2317	109	8	a	a	DET
cet-2317	109	9	aln	aln	NOUN
cet-2317	109	10	substrate	substrate	NOUN
cet-2317	109	11	and	and	CCONJ
cet-2317	109	12	their	their	PRON
cet-2317	109	13	conductivity	conductivity	NOUN
cet-2317	109	14	measured	measure	VERB
cet-2317	109	15	with	with	ADP
cet-2317	109	16	the	the	DET
cet-2317	109	17	help	help	NOUN
cet-2317	109	18	of	of	ADP
cet-2317	109	19	raman	raman	NOUN
cet-2317	109	20	spectra	spectra	PROPN
cet-2317	109	21	.	.	PROPN
cet-2317	109	22	simulation	simulation	PROPN
cet-2317	109	23	results	result	NOUN
cet-2317	109	24	showed	show	VERB
cet-2317	109	25	significant	significant	ADJ
cet-2317	109	26	temperature	temperature	NOUN
cet-2317	109	27	reduction	reduction	NOUN
cet-2317	109	28	at	at	ADP
cet-2317	109	29	lower	low	ADJ
cet-2317	109	30	bumps	bump	NOUN
cet-2317	109	31	height	height	NOUN
cet-2317	109	32	and	and	CCONJ
cet-2317	109	33	in	in	ADP
cet-2317	109	34	presence	presence	NOUN
cet-2317	109	35	of	of	ADP
cet-2317	109	36	an	an	DET
cet-2317	109	37	au	au	ADJ
cet-2317	109	38	layer	layer	NOUN
cet-2317	109	39	.	.	PUNCT
cet-2317	110	1	from	from	ADP
cet-2317	110	2	the	the	DET
cet-2317	110	3	simulations	simulation	NOUN
cet-2317	110	4	it	it	PRON
cet-2317	110	5	can	can	AUX
cet-2317	110	6	be	be	AUX
cet-2317	110	7	stated	state	VERB
cet-2317	110	8	that	that	SCONJ
cet-2317	110	9	cnt	cnt	PROPN
cet-2317	110	10	width	width	PROPN
cet-2317	110	11	influences	influence	NOUN
cet-2317	110	12	heat	heat	NOUN
cet-2317	110	13	dissipation	dissipation	NOUN
cet-2317	110	14	for	for	ADP
cet-2317	110	15	low	low	ADJ
cet-2317	110	16	values	value	NOUN
cet-2317	110	17	of	of	ADP
cet-2317	110	18	thermal	thermal	ADJ
cet-2317	110	19	conductivity	conductivity	NOUN
cet-2317	110	20	(	(	PUNCT
cet-2317	110	21	60	60	NUM
cet-2317	110	22	w	w	NOUN
cet-2317	110	23	/	/	SYM
cet-2317	110	24	m	m	PROPN
cet-2317	110	25	k	k	NOUN
cet-2317	110	26	)	)	PUNCT
cet-2317	110	27	;	;	PUNCT
cet-2317	110	28	after	after	SCONJ
cet-2317	110	29	a	a	DET
cet-2317	110	30	value	value	NOUN
cet-2317	110	31	of	of	ADP
cet-2317	110	32	about	about	ADV
cet-2317	110	33	1250	1250	NUM
cet-2317	110	34	w	w	PROPN
cet-2317	110	35	/	/	SYM
cet-2317	110	36	mk	mk	PROPN
cet-2317	110	37	,	,	PUNCT
cet-2317	110	38	different	different	ADJ
cet-2317	110	39	bump	bump	NOUN
cet-2317	110	40	’s	’s	PART
cet-2317	110	41	width	width	NOUN
cet-2317	110	42	does	do	AUX
cet-2317	110	43	n’t	not	PART
cet-2317	110	44	change	change	VERB
cet-2317	110	45	significantly	significantly	ADV
cet-2317	110	46	thermal	thermal	ADJ
cet-2317	110	47	profile	profile	NOUN
cet-2317	110	48	.	.	PUNCT
cet-2317	111	1	increasing	increase	VERB
cet-2317	111	2	bumps	bump	NOUN
cet-2317	111	3	number	number	NOUN
cet-2317	111	4	,	,	PUNCT
cet-2317	111	5	thermal	thermal	ADJ
cet-2317	111	6	management	management	NOUN
cet-2317	111	7	is	be	AUX
cet-2317	111	8	improved	improve	VERB
cet-2317	111	9	.	.	PUNCT
cet-2317	112	1	considering	consider	VERB
cet-2317	112	2	the	the	DET
cet-2317	112	3	case	case	NOUN
cet-2317	112	4	of	of	ADP
cet-2317	112	5	more	more	ADJ
cet-2317	112	6	devices	device	NOUN
cet-2317	112	7	working	work	VERB
cet-2317	112	8	together	together	ADV
cet-2317	112	9	,	,	PUNCT
cet-2317	112	10	our	our	PRON
cet-2317	112	11	simulation	simulation	NOUN
cet-2317	112	12	demonstrate	demonstrate	VERB
cet-2317	112	13	that	that	SCONJ
cet-2317	112	14	also	also	ADV
cet-2317	112	15	in	in	ADP
cet-2317	112	16	this	this	DET
cet-2317	112	17	case	case	NOUN
cet-2317	112	18	the	the	DET
cet-2317	112	19	effect	effect	NOUN
cet-2317	112	20	of	of	ADP
cet-2317	112	21	cnt	cnt	PROPN
cet-2317	112	22	’s	’s	PART
cet-2317	112	23	bumps	bump	NOUN
cet-2317	112	24	is	be	AUX
cet-2317	112	25	helpful	helpful	ADJ
cet-2317	112	26	.	.	PUNCT
cet-2317	113	1	furthermore	furthermore	ADV
cet-2317	113	2	,	,	PUNCT
cet-2317	113	3	the	the	DET
cet-2317	113	4	configuration	configuration	NOUN
cet-2317	113	5	including	include	VERB
cet-2317	113	6	cnt	cnt	PROPN
cet-2317	113	7	bumps	bump	NOUN
cet-2317	113	8	gives	give	VERB
cet-2317	113	9	better	well	ADJ
cet-2317	113	10	results	result	NOUN
cet-2317	113	11	than	than	ADP
cet-2317	113	12	that	that	PRON
cet-2317	113	13	obtained	obtain	VERB
cet-2317	113	14	using	use	VERB
cet-2317	113	15	a	a	DET
cet-2317	113	16	common	common	ADJ
cet-2317	113	17	flip	flip	ADJ
cet-2317	113	18	chip	chip	NOUN
cet-2317	113	19	device	device	NOUN
cet-2317	113	20	,	,	PUNCT
cet-2317	113	21	with	with	ADP
cet-2317	113	22	cu6sn5	cu6sn5	PROPN
cet-2317	113	23	solders	solders	PROPN
cet-2317	113	24	bumps	bump	NOUN
cet-2317	113	25	in	in	ADP
cet-2317	113	26	a	a	DET
cet-2317	113	27	forced	force	VERB
cet-2317	113	28	convection	convection	NOUN
cet-2317	113	29	regime	regime	NOUN
cet-2317	113	30	,	,	PUNCT
cet-2317	113	31	1	1	NUM
cet-2317	113	32	m	m	PROPN
cet-2317	113	33	/	/	SYM
cet-2317	113	34	s	s	PROPN
cet-2317	113	35	,	,	PUNCT
cet-2317	113	36	of	of	ADP
cet-2317	113	37	transformer	transformer	ADJ
cet-2317	113	38	oil	oil	NOUN
cet-2317	113	39	at	at	ADP
cet-2317	113	40	273	273	NUM
cet-2317	113	41	k.	k.	NOUN
cet-2317	113	42	the	the	DET
cet-2317	113	43	best	good	ADJ
cet-2317	113	44	result	result	NOUN
cet-2317	113	45	was	be	AUX
cet-2317	113	46	obtained	obtain	VERB
cet-2317	113	47	in	in	ADP
cet-2317	113	48	the	the	DET
cet-2317	113	49	configuration	configuration	NOUN
cet-2317	113	50	with	with	ADP
cet-2317	113	51	au	au	ADJ
cet-2317	113	52	layer	layer	NOUN
cet-2317	113	53	and	and	CCONJ
cet-2317	113	54	10	10	NUM
cet-2317	113	55	µm	µm	NOUN
cet-2317	113	56	connection	connection	NOUN
cet-2317	113	57	height	height	PROPN
cet-2317	113	58	cnts	cnts	PROPN
cet-2317	113	59	,	,	PUNCT
cet-2317	113	60	resulting	result	VERB
cet-2317	113	61	in	in	ADP
cet-2317	113	62	a	a	DET
cet-2317	113	63	better	well	ADJ
cet-2317	113	64	hotspots	hotspot	NOUN
cet-2317	113	65	management	management	NOUN
cet-2317	113	66	.	.	PUNCT
cet-2317	114	1	reference	reference	NOUN
cet-2317	114	2	altavilla	altavilla	PROPN
cet-2317	114	3	c.	c.	PROPN
cet-2317	114	4	,	,	PUNCT
cet-2317	114	5	sarno	sarno	PROPN
cet-2317	114	6	m.	m.	PROPN
cet-2317	114	7	,	,	PUNCT
cet-2317	114	8	ciambelli	ciambelli	PROPN
cet-2317	114	9	p.	p.	PROPN
cet-2317	114	10	2009	2009	NUM
cet-2317	114	11	,	,	PUNCT
cet-2317	114	12	synthesis	synthesis	NOUN
cet-2317	114	13	of	of	ADP
cet-2317	114	14	ordered	order	VERB
cet-2317	114	15	layers	layer	NOUN
cet-2317	114	16	of	of	ADP
cet-2317	114	17	monodisperse	monodisperse	PROPN
cet-2317	114	18	cofe2o4	cofe2o4	NOUN
cet-2317	114	19	nanoparticles	nanoparticle	NOUN
cet-2317	114	20	for	for	ADP
cet-2317	114	21	catalyzed	catalyze	VERB
cet-2317	114	22	growth	growth	NOUN
cet-2317	114	23	of	of	ADP
cet-2317	114	24	carbon	carbon	NOUN
cet-2317	114	25	nanotubes	nanotube	NOUN
cet-2317	114	26	on	on	ADP
cet-2317	114	27	silicon	silicon	NOUN
cet-2317	114	28	substrate	substrate	NOUN
cet-2317	114	29	,	,	PUNCT
cet-2317	114	30	chem	chem	NOUN
cet-2317	114	31	.	.	PUNCT
cet-2317	115	1	mater	mater	NOUN
cet-2317	115	2	.	.	PUNCT
cet-2317	116	1	21	21	NUM
cet-2317	116	2	,	,	PUNCT
cet-2317	116	3	4851	4851	NUM
cet-2317	116	4	-	-	SYM
cet-2317	116	5	4858	4858	NUM
cet-2317	116	6	.	.	PUNCT
cet-2317	117	1	balandin	balandin	VERB
cet-2317	117	2	a.a	a.a	PROPN
cet-2317	117	3	.	.	PROPN
cet-2317	117	4	,	,	PUNCT
cet-2317	117	5	ghosh	ghosh	PROPN
cet-2317	117	6	s.	s.	PROPN
cet-2317	117	7	,	,	PUNCT
cet-2317	117	8	bao	bao	PROPN
cet-2317	117	9	w.	w.	PROPN
cet-2317	117	10	,	,	PUNCT
cet-2317	117	11	calizo	calizo	PROPN
cet-2317	117	12	i.	i.	PROPN
cet-2317	117	13	,	,	PUNCT
cet-2317	117	14	teweldebrhan	teweldebrhan	PROPN
cet-2317	117	15	d.	d.	PROPN
cet-2317	117	16	,	,	PUNCT
cet-2317	117	17	miao	miao	PROPN
cet-2317	117	18	f.	f.	PROPN
cet-2317	117	19	,	,	PUNCT
cet-2317	117	20	lau	lau	PROPN
cet-2317	117	21	c.n	c.n	PROPN
cet-2317	117	22	.	.	PROPN
cet-2317	117	23	2008	2008	NUM
cet-2317	117	24	,	,	PUNCT
cet-2317	117	25	superior	superior	ADJ
cet-2317	117	26	thermal	thermal	ADJ
cet-2317	117	27	conductivity	conductivity	NOUN
cet-2317	117	28	of	of	ADP
cet-2317	117	29	single	single	ADJ
cet-2317	117	30	-	-	PUNCT
cet-2317	117	31	layer	layer	NOUN
cet-2317	117	32	graphene	graphene	NOUN
cet-2317	117	33	,	,	PUNCT
cet-2317	117	34	nanolett	nanolett	NOUN
cet-2317	117	35	.	.	PUNCT
cet-2317	117	36	8	8	NUM
cet-2317	117	37	,	,	PUNCT
cet-2317	117	38	902907	902907	NUM
cet-2317	117	39	.	.	PUNCT
cet-2317	118	1	bertoluzza	bertoluzza	PROPN
cet-2317	118	2	f.	f.	PROPN
cet-2317	118	3	,	,	PUNCT
cet-2317	118	4	delmonte	delmonte	PROPN
cet-2317	118	5	n.	n.	PROPN
cet-2317	118	6	,	,	PUNCT
cet-2317	118	7	menozzi	menozzi	PROPN
cet-2317	118	8	r.	r.	PROPN
cet-2317	118	9	2009	2009	NUM
cet-2317	118	10	,	,	PUNCT
cet-2317	118	11	three	three	NUM
cet-2317	118	12	-	-	PUNCT
cet-2317	118	13	dimensional	dimensional	ADJ
cet-2317	118	14	finite	finite	ADJ
cet-2317	118	15	-	-	ADJ
cet-2317	118	16	element	element	ADJ
cet-2317	118	17	thermal	thermal	ADJ
cet-2317	118	18	simulation	simulation	NOUN
cet-2317	118	19	of	of	ADP
cet-2317	118	20	ganbased	ganbase	VERB
cet-2317	118	21	hemts	hemts	PROPN
cet-2317	118	22	,	,	PUNCT
cet-2317	118	23	microelettron	microelettron	PROPN
cet-2317	118	24	.	.	PUNCT
cet-2317	118	25	reliab	reliab	PROPN
cet-2317	118	26	.	.	PUNCT
cet-2317	119	1	49	49	NUM
cet-2317	119	2	,	,	PUNCT
cet-2317	119	3	468	468	NUM
cet-2317	119	4	-	-	SYM
cet-2317	119	5	473	473	NUM
cet-2317	119	6	.	.	PUNCT
cet-2317	119	7	horibe	horibe	NOUN
cet-2317	119	8	m.	m.	NOUN
cet-2317	119	9	,	,	PUNCT
cet-2317	119	10	nihei	nihei	PROPN
cet-2317	119	11	m.	m.	NOUN
cet-2317	119	12	,	,	PUNCT
cet-2317	119	13	kondo	kondo	PROPN
cet-2317	119	14	d.	d.	PROPN
cet-2317	119	15	,	,	PUNCT
cet-2317	119	16	kawabata	kawabata	PROPN
cet-2317	119	17	a.	a.	PROPN
cet-2317	119	18	,	,	PUNCT
cet-2317	119	19	awano	awano	PROPN
cet-2317	119	20	y.	y.	PROPN
cet-2317	119	21	2004	2004	NUM
cet-2317	119	22	,	,	PUNCT
cet-2317	119	23	influence	influence	NOUN
cet-2317	119	24	of	of	ADP
cet-2317	119	25	growth	growth	NOUN
cet-2317	119	26	mode	mode	NOUN
cet-2317	119	27	of	of	ADP
cet-2317	119	28	carbon	carbon	NOUN
cet-2317	119	29	nanotubes	nanotube	NOUN
cet-2317	119	30	on	on	ADP
cet-2317	119	31	physical	physical	ADJ
cet-2317	119	32	properties	property	NOUN
cet-2317	119	33	for	for	ADP
cet-2317	119	34	multiwalled	multiwalle	VERB
cet-2317	119	35	carbon	carbon	NOUN
cet-2317	119	36	nanotube	nanotube	NOUN
cet-2317	119	37	films	film	NOUN
cet-2317	119	38	grown	grow	VERB
cet-2317	119	39	by	by	ADP
cet-2317	119	40	catalystic	catalystic	ADJ
cet-2317	119	41	chemical	chemical	NOUN
cet-2317	119	42	vapor	vapor	NOUN
cet-2317	119	43	deposition	deposition	NOUN
cet-2317	119	44	,	,	PUNCT
cet-2317	119	45	jpn	jpn	PROPN
cet-2317	119	46	.	.	PUNCT
cet-2317	120	1	j.	j.	PROPN
cet-2317	120	2	appl	appl	PROPN
cet-2317	120	3	.	.	PUNCT
cet-2317	121	1	phys	phy	NOUN
cet-2317	121	2	.	.	PUNCT
cet-2317	122	1	43	43	NUM
cet-2317	122	2	,	,	PUNCT
cet-2317	122	3	7337	7337	NUM
cet-2317	122	4	-	-	SYM
cet-2317	122	5	7341	7341	NUM
cet-2317	122	6	.	.	PUNCT
cet-2317	123	1	kaur	kaur	PROPN
cet-2317	123	2	s.	s.	PROPN
cet-2317	123	3	,	,	PUNCT
cet-2317	123	4	raravikar	raravikar	NOUN
cet-2317	123	5	n.	n.	NOUN
cet-2317	123	6	,	,	PUNCT
cet-2317	123	7	helms	helms	PROPN
cet-2317	123	8	b.a	b.a	PROPN
cet-2317	123	9	.	.	PROPN
cet-2317	123	10	,	,	PUNCT
cet-2317	123	11	prasher	prasher	PROPN
cet-2317	123	12	r.	r.	PROPN
cet-2317	123	13	,	,	PUNCT
cet-2317	123	14	ogletree	ogletree	PROPN
cet-2317	123	15	d.f	d.f	PROPN
cet-2317	123	16	.	.	PROPN
cet-2317	123	17	2014	2014	NUM
cet-2317	123	18	,	,	PUNCT
cet-2317	123	19	enhanced	enhance	VERB
cet-2317	123	20	thermal	thermal	ADJ
cet-2317	123	21	transport	transport	NOUN
cet-2317	123	22	at	at	ADP
cet-2317	123	23	covalently	covalently	ADV
cet-2317	123	24	functionalized	functionalize	VERB
cet-2317	123	25	carbon	carbon	NOUN
cet-2317	123	26	nanotube	nanotube	NOUN
cet-2317	123	27	array	array	NOUN
cet-2317	123	28	interfaces	interface	NOUN
cet-2317	123	29	,	,	PUNCT
cet-2317	123	30	nat	nat	PROPN
cet-2317	123	31	.	.	PUNCT
cet-2317	124	1	comm	comm	NOUN
cet-2317	124	2	.	.	PUNCT
cet-2317	125	1	5	5	NUM
cet-2317	125	2	,	,	PUNCT
cet-2317	125	3	3082	3082	NUM
cet-2317	125	4	.	.	PUNCT
cet-2317	126	1	kim	kim	PROPN
cet-2317	126	2	p.	p.	PROPN
cet-2317	126	3	,	,	PUNCT
cet-2317	126	4	shi	shi	PROPN
cet-2317	126	5	l.	l.	PROPN
cet-2317	126	6	,	,	PUNCT
cet-2317	126	7	majumdar	majumdar	PROPN
cet-2317	126	8	a.	a.	PROPN
cet-2317	126	9	,	,	PUNCT
cet-2317	126	10	mceuen	mceuen	PROPN
cet-2317	126	11	p.	p.	PROPN
cet-2317	126	12	l.	l.	PROPN
cet-2317	126	13	2001	2001	NUM
cet-2317	126	14	,	,	PUNCT
cet-2317	126	15	thermal	thermal	ADJ
cet-2317	126	16	transport	transport	NOUN
cet-2317	126	17	measurements	measurement	NOUN
cet-2317	126	18	of	of	ADP
cet-2317	126	19	individual	individual	ADJ
cet-2317	126	20	multiwalled	multiwalle	VERB
cet-2317	126	21	nanotubes	nanotube	NOUN
cet-2317	126	22	,	,	PUNCT
cet-2317	126	23	phys	phy	NOUN
cet-2317	126	24	.	.	PUNCT
cet-2317	127	1	rev	rev	PROPN
cet-2317	127	2	.	.	PROPN
cet-2317	127	3	lett	lett	PROPN
cet-2317	127	4	.	.	PUNCT
cet-2317	128	1	87	87	NUM
cet-2317	128	2	,	,	PUNCT
cet-2317	128	3	2155021	2155021	NUM
cet-2317	128	4	-	-	SYM
cet-2317	128	5	2155024	2155024	NUM
cet-2317	128	6	.	.	PUNCT
cet-2317	129	1	lu	lu	PROPN
cet-2317	129	2	x.	x.	PROPN
cet-2317	129	3	,	,	PUNCT
cet-2317	129	4	shi	shi	PROPN
cet-2317	129	5	t.	t.	PROPN
cet-2317	129	6	,	,	PUNCT
cet-2317	129	7	xia	xia	PROPN
cet-2317	129	8	q.	q.	PROPN
cet-2317	129	9	,	,	PUNCT
cet-2317	129	10	liao	liao	PROPN
cet-2317	129	11	g.	g.	PROPN
cet-2317	129	12	2012	2012	NUM
cet-2317	129	13	,	,	PUNCT
cet-2317	129	14	thermal	thermal	ADJ
cet-2317	129	15	conduction	conduction	NOUN
cet-2317	129	16	analysis	analysis	NOUN
cet-2317	129	17	and	and	CCONJ
cet-2317	129	18	characterization	characterization	NOUN
cet-2317	129	19	of	of	ADP
cet-2317	129	20	solder	solder	NOUN
cet-2317	129	21	bumps	bump	NOUN
cet-2317	129	22	in	in	ADP
cet-2317	129	23	flip	flip	ADJ
cet-2317	129	24	chip	chip	NOUN
cet-2317	129	25	package	package	NOUN
cet-2317	129	26	,	,	PUNCT
cet-2317	129	27	appl	appl	PROPN
cet-2317	129	28	.	.	PROPN
cet-2317	129	29	therm	therm	PROPN
cet-2317	129	30	.	.	PUNCT
cet-2317	130	1	eng	eng	PROPN
cet-2317	130	2	.	.	PROPN
cet-2317	130	3	36	36	NUM
cet-2317	130	4	,	,	PUNCT
cet-2317	130	5	181	181	NUM
cet-2317	130	6	-	-	SYM
cet-2317	130	7	187	187	NUM
cet-2317	130	8	.	.	PUNCT
cet-2317	131	1	shioya	shioya	PROPN
cet-2317	131	2	h.	h.	PROPN
cet-2317	131	3	,	,	PUNCT
cet-2317	131	4	iwai	iwai	PROPN
cet-2317	131	5	t.	t.	PROPN
cet-2317	131	6	,	,	PUNCT
cet-2317	131	7	kondo	kondo	PROPN
cet-2317	131	8	d.	d.	PROPN
cet-2317	131	9	,	,	PUNCT
cet-2317	131	10	nihei	nihei	PROPN
cet-2317	131	11	m.	m.	NOUN
cet-2317	131	12	awano	awano	PROPN
cet-2317	131	13	y.	y.	PROPN
cet-2317	131	14	2007	2007	NUM
cet-2317	131	15	,	,	PUNCT
cet-2317	131	16	evaluation	evaluation	NOUN
cet-2317	131	17	of	of	ADP
cet-2317	131	18	thermal	thermal	ADJ
cet-2317	131	19	conductivity	conductivity	NOUN
cet-2317	131	20	of	of	ADP
cet-2317	131	21	a	a	DET
cet-2317	131	22	multi	multi	ADJ
cet-2317	131	23	-	-	ADJ
cet-2317	131	24	walled	walled	ADJ
cet-2317	131	25	carbon	carbon	NOUN
cet-2317	131	26	nanotube	nanotube	NOUN
cet-2317	131	27	using	use	VERB
cet-2317	131	28	the	the	DET
cet-2317	131	29	δvgs	δvg	NOUN
cet-2317	131	30	method	method	NOUN
cet-2317	131	31	,	,	PUNCT
cet-2317	131	32	jpn	jpn	PROPN
cet-2317	131	33	.	.	PUNCT
cet-2317	132	1	j.	j.	PROPN
cet-2317	132	2	appl.phys	appl.phys	PROPN
cet-2317	132	3	.	.	PROPN
cet-2317	132	4	46	46	NUM
cet-2317	132	5	,	,	PUNCT
cet-2317	132	6	3139	3139	NUM
cet-2317	132	7	-	-	SYM
cet-2317	132	8	3143	3143	NUM
cet-2317	132	9	.	.	PUNCT
cet-2317	133	1	soga	soga	PROPN
cet-2317	133	2	i.	i.	PROPN
cet-2317	133	3	,	,	PUNCT
cet-2317	133	4	kondo	kondo	PROPN
cet-2317	133	5	d.	d.	PROPN
cet-2317	133	6	,	,	PUNCT
cet-2317	133	7	yamaguchi	yamaguchi	PROPN
cet-2317	133	8	y.	y.	PROPN
cet-2317	133	9	,	,	PUNCT
cet-2317	133	10	iwai	iwai	PROPN
cet-2317	133	11	t.	t.	PROPN
cet-2317	133	12	2009	2009	NUM
cet-2317	133	13	,	,	PUNCT
cet-2317	133	14	thermal	thermal	ADJ
cet-2317	133	15	management	management	NOUN
cet-2317	133	16	for	for	ADP
cet-2317	133	17	flip	flip	NOUN
cet-2317	133	18	-	-	PUNCT
cet-2317	133	19	chip	chip	NOUN
cet-2317	133	20	high	high	ADJ
cet-2317	133	21	power	power	NOUN
cet-2317	133	22	amplifiers	amplifier	NOUN
cet-2317	133	23	utilizing	utilize	VERB
cet-2317	133	24	carbon	carbon	NOUN
cet-2317	133	25	nanotube	nanotube	NOUN
cet-2317	133	26	bumps	bump	NOUN
cet-2317	133	27	,	,	PUNCT
cet-2317	133	28	ieee	ieee	NOUN
cet-2317	133	29	international	international	ADJ
cet-2317	133	30	symposium	symposium	NOUN
cet-2317	133	31	on	on	ADP
cet-2317	133	32	radio	radio	NOUN
cet-2317	133	33	-	-	PUNCT
cet-2317	133	34	frequency	frequency	NOUN
cet-2317	133	35	integration	integration	NOUN
cet-2317	133	36	technology	technology	NOUN
cet-2317	133	37	,	,	PUNCT
cet-2317	133	38	978	978	NUM
cet-2317	133	39	,	,	PUNCT
cet-2317	133	40	221	221	NUM
cet-2317	133	41	-	-	SYM
cet-2317	133	42	224	224	NUM
cet-2317	133	43	.	.	PUNCT
cet-2317	134	1	wang	wang	PROPN
cet-2317	134	2	y.	y.	PROPN
cet-2317	134	3	h.	h.	PROPN
cet-2317	134	4	,	,	PUNCT
cet-2317	134	5	liang	liang	PROPN
cet-2317	134	6	y.	y.	PROPN
cet-2317	134	7	c.	c.	PROPN
cet-2317	134	8	,	,	PUNCT
cet-2317	134	9	samundra	samundra	PROPN
cet-2317	134	10	g.	g.	PROPN
cet-2317	134	11	s.	s.	PROPN
cet-2317	134	12	,	,	PUNCT
cet-2317	134	13	chang	chang	PROPN
cet-2317	134	14	t.	t.	PROPN
cet-2317	134	15	f.	f.	PROPN
cet-2317	134	16	,	,	PUNCT
cet-2317	134	17	huang	huang	PROPN
cet-2317	134	18	g.	g.	PROPN
cet-2317	134	19	h.	h.	PROPN
cet-2317	134	20	,	,	PUNCT
cet-2317	134	21	yuan	yuan	PROPN
cet-2317	134	22	l.	l.	PROPN
cet-2317	134	23	,	,	PUNCT
cet-2317	134	24	lo	lo	PROPN
cet-2317	134	25	g.	g.	PROPN
cet-2317	134	26	q.	q.	PROPN
cet-2317	134	27	2013	2013	NUM
cet-2317	134	28	,	,	PUNCT
cet-2317	134	29	modelling	model	VERB
cet-2317	134	30	temperature	temperature	NOUN
cet-2317	134	31	dependence	dependence	NOUN
cet-2317	134	32	on	on	ADP
cet-2317	134	33	algan	algan	PROPN
cet-2317	134	34	/	/	SYM
cet-2317	134	35	gan	gan	PROPN
cet-2317	134	36	power	power	NOUN
cet-2317	134	37	hemt	hemt	PROPN
cet-2317	134	38	device	device	NOUN
cet-2317	134	39	characteristics	characteristic	NOUN
cet-2317	134	40	,	,	PUNCT
cet-2317	134	41	semicond	semicond	PROPN
cet-2317	134	42	.	.	PUNCT
cet-2317	135	1	sci	sci	PROPN
cet-2317	135	2	.	.	PROPN
cet-2317	135	3	technol	technol	PROPN
cet-2317	135	4	.	.	PROPN
cet-2317	135	5	28	28	NUM
cet-2317	135	6	,	,	PUNCT
cet-2317	135	7	125010	125010	NUM
cet-2317	135	8	(	(	PUNCT
cet-2317	135	9	10pp	10pp	NOUN
cet-2317	135	10	)	)	PUNCT
cet-2317	135	11	.	.	PUNCT
cet-2317	136	1	zhang	zhang	PROPN
cet-2317	136	2	w.	w.	PROPN
cet-2317	136	3	,	,	PUNCT
cet-2317	136	4	huang	huang	PROPN
cet-2317	136	5	j.	j.	PROPN
cet-2317	136	6	yang	yang	PROPN
cet-2317	136	7	s.	s.	PROPN
cet-2317	136	8	,	,	PUNCT
cet-2317	136	9	gupta	gupta	PROPN
cet-2317	136	10	p.	p.	NOUN
cet-2317	136	11	2011	2011	NUM
cet-2317	136	12	,	,	PUNCT
cet-2317	136	13	case	case	NOUN
cet-2317	136	14	study	study	NOUN
cet-2317	136	15	:	:	PUNCT
cet-2317	136	16	alleviating	alleviate	VERB
cet-2317	136	17	hotspots	hotspot	NOUN
cet-2317	136	18	and	and	CCONJ
cet-2317	136	19	improving	improve	VERB
cet-2317	136	20	chip	chip	NOUN
cet-2317	136	21	reliability	reliability	NOUN
cet-2317	136	22	via	via	ADP
cet-2317	136	23	carbon	carbon	NOUN
cet-2317	136	24	nanotube	nanotube	ADJ
cet-2317	136	25	thermal	thermal	ADJ
cet-2317	136	26	interface	interface	NOUN
cet-2317	136	27	,	,	PUNCT
cet-2317	136	28	design	design	NOUN
cet-2317	136	29	,	,	PUNCT
cet-2317	136	30	automation	automation	NOUN
cet-2317	136	31	&	&	CCONJ
cet-2317	136	32	test	test	PROPN
cet-2317	136	33	in	in	ADP
cet-2317	136	34	europe	europe	PROPN
cet-2317	136	35	conference	conference	PROPN
cet-2317	136	36	&	&	CCONJ
cet-2317	136	37	exhibition	exhibition	PROPN
cet-2317	136	38	00	00	NUM
cet-2317	136	39	,	,	PUNCT
cet-2317	136	40	1	1	NUM
cet-2317	136	41	-	-	SYM
cet-2317	136	42	6	6	NUM
cet-2317	136	43	0	0	NUM
cet-2317	136	44	40	40	NUM
cet-2317	136	45	80	80	NUM
cet-2317	136	46	120	120	NUM
cet-2317	136	47	0,44	0,44	NOUN
cet-2317	136	48	0,64	0,64	NUM
cet-2317	136	49	t	t	PROPN
cet-2317	136	50	(	(	PUNCT
cet-2317	136	51	°	°	ADP
cet-2317	136	52	c	c	NOUN
cet-2317	136	53	)	)	PUNCT
cet-2317	136	54	6	6	NUM
cet-2317	136	55	bumps	bump	NOUN
cet-2317	136	56	13	13	NUM
cet-2317	136	57	bumps	bump	NOUN
cet-2317	136	58	x	x	SYM
cet-2317	136	59	axis	axis	NOUN
cet-2317	136	60	1524	1524	NUM