Edelweiss Applied Science and Technology 
ISSN: 2576-8484 
Vol. 9, No. 10, 1052-1066 
2025  
Publisher: Learning Gate 
DOI: 10.55214/2576-8484.v9i10.10594 
© 2025 by the authors; licensee Learning Gate 

© 2025 by the authors; licensee Learning Gate 
History: Received: 15 July 2025; Revised: 26 August 2025; Accepted: 29 August 2025; Published: 17 October 2025 
* Correspondence: mazbaneto@gmail.com  

 
 
 
 
 

Temperature-controlled growth of ZnO Thin films by spray pyrolysis: 
Influence on physical properties for photovoltaic applications 

 
Ognanmi Ako1,2, Mazabalo Baneto1,2*, Alphonse Déssoudji Gboglo1,2, Muthusamy Senthilkumar3, 
Muthiah Haris3 
1Centre d’Excellence Régional pour la Maîtrise de l’Electricité (CERME), University of Lomé, 01BP 1515, Lomé, Togo. 
2Laboratory on Solar Energy, Department of Physics, Faculty of Sciences, University of Lomé, 01BP 1515, Lomé, Togo; 
mazbaneto@gmail.com (M.B.). 
3School of Arts and Natural Sciences, Joy University, Raja Nagar, Vadakangulam, Near Kanyakumari, Tirunelveli Dist.-
627116, Tamil Nadu, India. 

 

Abstract: This work investigates the influence of deposition temperature on the structural, 
morphological, and optical properties of zinc oxide (ZnO) thin films synthesized by spray pyrolysis. 
Films were deposited at 300 °C, 350 °C, and 400 °C using a 0.3 M zinc acetate precursor solution, 
followed by annealing at 400 °C for 3 hours. X-ray diffraction revealed that all films are polycrystalline 
with a hexagonal wurtzite structure, exhibiting a preferred (002) orientation that becomes more 
pronounced at higher deposition temperatures. Fourier-transform infrared spectroscopy confirmed the 
presence of characteristic Zn–O vibrations and surface functional groups. Scanning electron microscopy 
showed uniform and dense film coverage, with a distinct change in morphology from aggregated 
nanocrystals at 300 °C to microplates and nanograins at 350 °C and 400 °C. UV-visible spectroscopy 
indicated an increase in optical transmittance with temperature, reaching up to 85% at 400 °C in the 
visible range. The optical band gap slightly increased with deposition temperature, ranging from 3.26 
eV to 3.28 eV. Based on the structural, morphological, and optical properties, 400 °C is identified as the 
optimal deposition temperature for ZnO thin films, offering enhanced crystallinity, surface quality, and 
optical transparency essential for improving the performance of photovoltaic devices. 

Keywords: Deposition temperature, Photovoltaic, Physical properties, Spray pyrolysis, Thin films, Zinc oxide. 

 
1. Introduction  

Zinc oxide (ZnO) is a transparent conductive oxide belonging to the family of II-VI binary 
semiconductors [1]. Over the past few years, it has attracted increasing research interest due to its 
remarkable optoelectronic properties. It exhibits a wide direct bandgap (3.37 eV at 300 K), providing 
excellent transparency in the visible range [2] as well as a high exciton binding energy (60 meV) [3] 
and significant electron mobility (205 cm2V-1s-1) [4]. In addition, its non-toxicity and natural abundance 
[5, 6] make it an attractive and sustainable material. Thanks to this combination of properties, ZnO is 
considered a material of choice and a promising candidate for various applications, including display 
screens [7], gas sensors [8], laser diodes [9] and photovoltaic cells [10]. In solar cells, particularly in 
organic solar cells (OSCs), ZnO thin films are commonly used as electron transport layers (ETLs) [11] 
where their role is to extract and transport charges while ensuring high optical transparency to 
maximize light harvesting [12]. For this purpose, the films must combine enhanced crystallinity, 
smooth surface morphology, and high transmittance in the visible range, as these properties directly 
influence charge mobility, recombination processes, and overall device efficiency [13]. Previous studies 

https://orcid.org/0000-0003-0395-2165
https://orcid.org/0009-0004-0557-0608
https://orcid.org/0000-0001-8567-5610


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have shown that nanostructured ZnO thin films can meet these requirements [14]. However, the 
properties of ZnO thin films strongly depend on the deposition techniques employed. ZnO can be 
synthesized using various methods, including spin coating [15, 16], dip coating [17, 18], chemical bath 
deposition [19], hydrothermal synthesis [20-22], vacuum thermal evaporation [23-25] and spray 
pyrolysis [26, 27]. Among these methods, spray pyrolysis is particularly advantageous: it is low-cost, 
does not require high vacuum or energy-intensive equipment, allows the simultaneous synthesis of 
multiple samples, and provides good control over the chemical composition of the material [6, 28]. The 
process involves atomizing a precursor solution onto a substrate heated at a controlled temperature [29, 
30]. The quality and properties of thin films prepared by spray pyrolysis are highly dependent on 
deposition parameters, such as solution concentration, solvent type, nozzle-to-substrate distance, spray 
flux density, deposition time, dopant concentration, post-deposition annealing, and substrate 
temperature [31]. Among these parameters, the deposition temperature is particularly critical, as it 
directly influences the crystalline growth, morphology, and optical properties of ZnO [32]. Previous 
studies have reported that temperature can significantly influence ZnO properties, but the results 
remain partially divergent. For instance, Bedia, et al. [32] observed improved transparency with 
increasing temperature, whereas Bettayeb et al. [33] reported a reduction in transmittance at higher 
deposition temperatures due to surface roughening. Ouhaibi et al. [34] highlighted notable changes in 
grain shape and size, while Nezzari et al. [35] demonstrated that higher deposition temperatures 
promote crystallite growth and a slight widening of the band gap. Although these works confirm the 
critical role of deposition temperature, the optimal conditions for obtaining ZnO thin films with the 
combination of structural, morphological, and optical properties required for photovoltaic applications 
have not yet been clearly defined. The precursor concentration also plays a decisive role in crystalline 
growth and film quality. In our previous work [26], it was shown that a zinc acetate concentration of 
0.3 M represents an optimal condition for obtaining well-crystallized ZnO thin films by spray pyrolysis. 
Building on this result, the present study focuses exclusively on the role of deposition temperature. ZnO 
thin films were deposited at 300, 350, and 400 °C using a fixed 0.3 M precursor concentration in order 
to determine how the structural, morphological, and optical properties evolve, and to identify the 
deposition temperature that provides the best balance of crystallinity, morphology, and optical 
transparency for photovoltaic applications. 
 

2. Experimental Details and Characterization 
2.1. Reagents 

Microscope glass slides were used as substrates for ZnO thin film deposition. Zinc acetate dihydrate 

(𝐶𝐻3𝐶𝑂𝑂)2𝑍𝑛 , 2𝐻2𝑂) (Sigma-Aldrich), ethanol (𝐶2𝐻6𝑂), acetone [(𝐶𝐻3)2𝐶𝑂], Nitric acid, nitric acid, 
and distilled water, all analytical grade (> 99% purity), were employed without further purification. A 
2:3 (v/v) distilled water-ethanol mixture was chosen as the solvent due to its low surface tension and 
viscosity [36] which favors fine droplet formation and uniform substrate coverage, while its high 
volatility helps minimize substrate cooling during deposition. 
 
2.2. Substrate Cleaning 

Glass substrates (2.5 cm × 2.0 cm) were first immersed for a few minutes in an aqueous nitric acid 
solution to remove dust and surface impurities. After rinsing with distilled water, the substrates were 
sequentially cleaned in an ultrasonic bath with acetone, ethanol, and distilled water for 15 minutes each 
to eliminate all organic and inorganic contaminants. Finally, the substrates were dried under a stream of 
hot air using a conventional heat blower. 
 
 



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2.3. Formation of ZnO Nanostructured Thin Films 
ZnO thin films were deposited on glass substrates at different temperatures, specifically 300°C, 

350°C, and 400°C, using the spray pyrolysis technique (HOLMARC, HO-TH-64) to study the effect of 
substrate temperature on the physical properties of ZnO thin films. Fig. 1 shows the procedure for 
preparing ZnO thin films. In the spray pyrolysis process, the main sources of Zn used to develop ZnO 
thin films are zinc chloride, zinc nitrate, zinc acetate, and zinc acetylacetonate [28, 37]. In this work, 
zinc acetate is used as the zinc precursor, as our previous work has shown that it provides good physical 
properties [26]. To prepare a 0.3 M solution, a specific mass of zinc acetate was dissolved in distilled 
water and ethanol in a 2:3 volume ratio to obtain a total volume of 20 mL. A few drops of hydrochloric 
acid were added to dissolve the zinc hydroxide precipitate. After 15 minutes of magnetic stirring, the 
solution became clear and ready for deposition using the spray pyrolysis setup. After deposition, all 
samples were annealed at 400 °C for 3 hours to promote good crystallization. 
   

 
Figure 1. 
Experimental procedure for ZnO thin film deposition via spray pyrolysis. 

 
2.4. Characterization of ZnO Nanostructured Thin Films 

The properties of ZnO thin films were analyzed using several complementary techniques. X-ray 

diffraction (EMPYREAN, λ = 1.5406 Å, Cu-Kα) was employed to determine the crystalline structure 
and phase composition. Surface morphology was examined by scanning electron microscopy (ZEISS-
EVO 18, 15 kV). Functional groups and chemical bonds were characterized by Fourier-transform 
infrared spectroscopy (Perkin-Elmer Spectrum 3, 4000 - 400 cm-1 in GladiATR mode). The optical 
transmittance of the thin films was measured using UV-visible spectrophotometry (JASCO V-670). 
 

3. Results and Discussion 
3.1. Structural Properties 

Figure 2 shows the X-ray diffraction (XRD) patterns of ZnO thin films deposited at temperatures 

ranging from 300 °C to 400 °C. For all samples, the diffraction peaks match those of JCPDS card No. 

36-1451, corresponding to the wurtzite phase of ZnO with a hexagonal structure and space group P6₃mc 
[38]. The XRD results indicate that deposition temperature significantly influences the film’s 

crystallographic orientation. At 300 °C, the films exhibit randomly oriented crystallites. However, 

starting from 350 °C, a pronounced preferential orientation along the (002) plane emerges, indicating 
that the crystallites tend to align with their c-axis perpendicular to the substrate surface. This evolution 
is attributed to the increase in kinetic energy of ZnO atoms with temperature, which promotes atomic 

migration toward low-energy crystallographic planes [39]. At lower temperatures, such as 300 °C, the 



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atoms possess insufficient energy to reach energetically favorable positions, resulting in less ordered 
growth [40]. 

Furthermore, when using the spray pyrolysis technique, ZnO tends to grow predominantly along 
the (002) orientation due to the low surface free energy of the (002) plane [41]. To confirm the degree 

of preferential orientation of the crystallites along the (002) axis, the texture coefficient 𝑇𝐶(ℎ𝑘𝑙) for each 

was calculated using equation (1): 

 𝑇𝐶(ℎ𝑘𝑙) =
[

𝐼(ℎ𝑘𝑙)

𝐼𝑟(ℎ𝑘𝑙)
]

1

𝑛
[∑ (

𝐼(ℎ𝑘𝑙)

𝐼𝑟(ℎ𝑘𝑙)
)𝑛 ]

 (1) 

where 𝑇𝐶(ℎ𝑘𝑙) is the texture coefficient, 𝐼(ℎ𝑘𝑙) represents the XRD intensities obtained from the thin 

films, and n is the number of diffraction peaks considered 𝐼𝑟(ℎ𝑘𝑙) is the reference XRD intensity (JCPDS 

card No. 36-1451) for randomly oriented grains.  

The 𝑇𝐶(ℎ𝑘𝑙) values calculated for the (100), (002), and (101) planes as a function of deposition 

temperature are summarized in Table 1. A marked increase in the 𝑇𝐶(002) plane is observed, rising from 

1.613 at 300 °C to 2.820 at 400 °C. At the lower temperature of 300 °C, the 𝑇𝐶(002) values for the 

different planes are relatively close to one another, indicating a nearly random orientation of crystallites. 
This behavior can be attributed to limited atomic mobility at lower temperatures, which hinders the 
rearrangement of atoms into energetically favorable orientations [42]. In contrast, at higher deposition 

temperatures (350 °C and 400 °C), the (002) orientation becomes dominant, with 𝑇𝐶 values increasing to 
2.407 and 2.820, respectively, indicate a strong preferential growth along the c-axis, perpendicular to 
the substrate surface. This is typically associated with improved crystallinity and film quality. The 

correspondingly low 𝑇𝐶 values for the (100) and (101) planes further support the preferential alignment 
along the (002) direction. These results are consistent with the XRD patterns, confirming the 
temperature-dependent evolution of ZnO thin film texture. 
 



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Figure 2. 
XRD patterns of ZnO thin films deposited at different temperatures. 

 

The lattice parameters a and c, as well as the interplanar spacing 𝑑ℎ𝑘𝑙  of the hexagonal wurtzite 
structure of all the synthesized ZnO thin films was calculated using relations (2-4) [43] and are 
presented in Table 1. 

 𝑎2 =
λ2(𝐴1𝐵2 − 𝐴2𝐵1)

3(𝐵2 sin2 𝜃1 − 𝐵1 sin2 𝜃2)
  (2) 

 𝑐2 =
λ2(𝐴1𝐵2 − 𝐴2𝐵1)

4(𝐴1 sin2 𝜃2 − 𝐴2 sin2 𝜃1)
 (3) 

 
1

𝑑ℎ𝑘𝑙
2 =

4

3
(

ℎ2 + ℎ𝑘 + 𝑘2

𝑎2 ) +
𝑙2

𝑐2
 (4) 

where λ is the wavelength of the X-rays (1.540 Å), θ is the diffraction angle, h, k, l are the Miller indices, 

𝑑ℎ𝑘𝑙 is the interplanar spacing, and the coefficients A₁, A₂, B₁, and B₂ are determined for a pair of planes  

(ℎ1𝑘1𝑘1) and (ℎ2𝑘2𝑙2) corresponding respectively to the angles θ₁ and θ₂, such that: que 

{
𝐴1 = ℎ1

2 + ℎ1𝑘1 + 𝑘1
2

𝐴2 = ℎ2
2 + ℎ2𝑘2 + 𝑘2

2  ;    {
𝐵1 = 𝑙1

2

𝐵2 = 𝑙2
2 

 
 

As shown in Table 1, the calculated lattice parameters a and c for the ZnO thin films are in close 
agreement with the standard reference values (a = 3.249 Å and c = 5.206 Å) reported in JCPDS card no. 
36-1451 [38]. No significant variation in these parameters is observed with changes in deposition 
temperature, indicating that the hexagonal wurtzite structure is maintained across all samples. The c/a 
ratio remains approximately 1.602 for all films, further confirming the formation of a well-ordered 

10 20 30 40 50 60 70 80
0

8400

16800

25200

0

8400

16800

25200

0

8400

16800

25200

In
te

n
si

ty
 (

a
.u

)

2 Theta (Degree)

 300°C

(0
0
2
)

(1
0
0
)

(1
0
1
)

(1
0
2
)

(1
1
0
)

(1
0
3
)

(1
1
2
)

(0
0
4
)

(0
0
2
)

(1
0
0
) (1

0
1
)

(1
0
2
)

(1
1
0
)

(1
0
3
)

(1
1
2
)

(0
0
4
)

 

 350°C

(0
0
2
)

(1
0
0
)

(1
0
1
)

(1
0
2
)

(1
1
0
)

(1
0
3
)

(1
1
2
)

(0
0
4
)

 

 

 400°C

(0
0
2
)

(1
0
0
)

(1
0
1
)

(1
0
2
)

(1
1
0
) (1

0
3
)

(1
1
2
)

(0
0
4
)

(0
0
2
)

(1
0
0
)

(1
0
1
)

(1
0
2
)

(1
1
0
)

(1
0
3
)

(1
1
2
)

(0
0
4
)



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hexagonal lattice. Similarly, the interplanar spacing values (𝑑ℎ𝑘𝑙), show negligible variation with 

deposition temperature. For all investigated conditions (300 °C, 350 °C, and 400 °C), the (002) 
interplanar spacing remains constant at approximately d = 2.599 Å, which is very close to the standard 

value of 2.603 Å. The slight reduction compared to the theoretical value may be attributed to internal 
stresses or strain effects within the crystal lattice, possibly induced during film growth or post-
deposition annealing [44]. 



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Table 1. 
Lattice parameters and structural properties of ZnO thin films derived from the (002) diffraction peak, deposited at different temperatures. 

 
Temperatures (°C) 𝟐𝜽(°) β (°) D(nm) d(Å) 

δ (×1014 
lines/m2) 

Lattice parameters 
L(Å) 𝑽(Å𝟑) 

𝑻𝑪(𝒉𝒌𝒍) 

a (Å) c(Å) c /a (100) (002) (101) 
300 34.486 0.386 21.530 2.599 2.157 3.241 5.202 1.605 1.974 47.317 0.618 1.613 0.769 

350 34.486 0.369 22.512 2.599 1.973 3.249 5.191 1.598 1.976 47.448 0.200 2.407 0.394 
400 34.486 0.400 20.772 2.599 2.318 3.239 5.215 1.610 1.974 47.370 0.062 2.820 0.118 

JCPDS N°31-1451 34.422 - - 2.603 - 3.250 5.207 1.602 - 47.622 - - - 



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The influence of temperature on crystallite size, bond length, unit cell volume, and dislocation 
density was studied. To this end, the crystallite size (D) was calculated using the Debye-Scherrer 
formula (Equation 5) [45]: 

 𝐷 =
0.9𝜆

𝛽𝑐𝑜𝑠𝜃
 (5) 

where k is a constant taken as 0.9, λ is the wavelength of the X-ray source used (1.540 Å), β is the 

full width at half maximum (FWHM) of the peak, and θ is the Bragg diffraction angle. The FWHM of 

the (002) diffraction peak exhibits a slight decrease from 0.386° at 300 °C to 0.369° at 350 °C, indicating 
an improvement in crystallinity. The corresponding crystallite sizes, calculated using the Debye-

Scherrer equation, increase from 21.53 nm to 22.51 nm. This enhancement is likely due to increased 

thermal energy at 350 °C, which facilitates atomic mobility and promotes better structural organization 

[42]. However, at 400 °C, the FWHM increases to 0.400°, suggesting a reduction in crystallite size to 

20.77 nm. This decrease may be attributed to structural rearrangements or the generation of additional 
defects caused by excessive thermal energy during deposition [42]. Such effects can disrupt long-range 
order and reduce average crystallite dimensions, despite the higher substrate temperature. 

The dislocation density (δ), which represents the number of defects resulting from internal 
deformation and the mismatch between the substrate and crystal growth, was calculated according to 
equation (6) [31]: 

 𝛿 =
1

𝐷2
 (6) 

where D is the crystallite size. A low dislocation density reflects a more structurally perfect crystal 
with fewer defects, which is essential for enhancing the electronic and optical properties of ZnO thin 

films. At a deposition temperature of 300 °C, the dislocation density is relatively high (2.157×1014 
lines/m2), indicating a significant number of crystal imperfections. This elevated defect density is 

consistent with the small crystal size (21.53 nm) and disordered grain growth observed at this 

temperature. As the deposition temperature increases to 350 °C, the dislocation density decreases 
markedly to 1.973×1014 lines/m2. This reduction corresponds with an increase in crystallite size 

(22.51 nm), reflecting improved crystalline quality. The enhanced atomic mobility at this temperature 
promotes grain coalescence and the reduction of structural defects, leading to better film organization 
and fewer dislocations [46]. However, at 400°C, the dislocation density increases again to 2.318×1014 
lines/m2, despite a strong preferential orientation along (002). This increase may result from rapid 
recrystallization, sub-grain formation, or internal stresses induced by local overheating [47]. Such 
phenomena can fragment crystallites or introduce new defects, thereby compromising structural 
uniformity. These results suggest the existence of an optimal deposition temperature, here identified as 

350 °C, above which excessive thermal energy begins to degrade the crystalline integrity of the ZnO 
films. 
The volume of the hexagonal cell (v) was evaluated by equation (7) [48]: 

 𝑣 = (
√3

2
) 𝑎2𝑐  (7) 

The unit cell volume of ZnO thin films shows a slight variation with deposition temperature, 

increasing from 47.317 ų at 300 °C to a maximum of 47.448 ų at 350 °C, before decreasing slightly to 

47.370 ų at 400 °C. The highest volume observed at 350 °C coincides with the temperature at which 
the crystallite size is maximized and the (002) preferential orientation is most pronounced. This 
suggests that the crystal growth at this temperature is more ordered and experiences fewer internal 
strains. 
The bond length of ZnO is calculated by equation (8) [49]: 



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 𝐿 = √
𝑎2

3
+ (

1

2
− 𝑢)

2

. 𝑐2 (8) 

where u is a parameter related to the c/a ratio, and u is a measure of the amount of each atom displaced 
relative to the next along the c axis, and is given by the following formula (9) [50]: 

 𝑢 =
𝑎2

3𝑐2
+ 0,25   (9) 

The Zn-O bond length also exhibits minimal variation with temperature, ranging from 1.974 Å to 

1.976 Å. This stability indicates that the local atomic arrangement remains largely unaffected by 
thermal fluctuations, reflecting the robustness of the Zn-O chemical bonding within the wurtzite lattice. 
 
3.2. Morphological Properties 

Figure 2 shows SEM images of thin films deposited at 300 °C, 350 °C, and 400 °C. The films 
deposited at 350 °C and 400 °C exhibit dense, homogeneous, and smooth surfaces, whereas the film 
obtained at 300 °C appears more porous, with a less compact morphology. At 300 °C, the surface is 
characterized by aggregates and grains composed of small crystals, along with the presence of 
irregularly shaped microplates. These microstructures tend to diminish with increasing temperature, 
indicating a thermally driven morphological evolution. This change is attributed to temperature-

dependent growth mechanisms [39]. At 300 °C, the precursor droplets reach the substrate, where 
solvent evaporation and only partial decomposition of zinc acetate occur. This incomplete 
decomposition at this temperature, despite the known decomposition onset of zinc acetate around 180–

200 °C, may explain the possible residual presence of organic species, although no secondary phases 

were detected in XRD, likely due to their low concentration. In contrast, at 400 °C, solvent evaporation 
occurs before the droplets reach the substrate, enabling more complete precursor decomposition [42]. 
The enhanced thermal energy at higher temperatures also promotes grain coalescence, leading to the 
formation of larger, well-defined aggregates and a more compact film structure. Notably, the grains 
formed at 350°C become larger at 400°C, indicating an agglomeration effect favored by increased atomic 
mobility and surface diffusion [42]. These morphological observations are in good agreement with 
XRD results. 
 

 
Figure 1. 
SEM images of ZnO thin films deposited at different temperatures (a) 300 °C, (b) 350 °C and (c) 400 °C. 

 
3.3. Optical Properties 

Figure 4 shows the optical transmission spectra of ZnO thin films deposited at different 
temperatures. Measurements were performed in the UV-visible range (400 - 900 nm). In this spectral 
region, pronounced interference fringes are observed, originating from multiple reflections at the film 

200nm 



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surface and the film/substrate interface, as well as from light scattering, which is more pronounced for 
small grain sizes. The presence of such fringes also indicates a relatively smooth surface and a uniform 
film, which is consistent with the SEM observations at higher deposition temperatures. 

 

 
Figure 4. 
(a) Optical transmittance spectra of ZnO thin films deposited at different temperatures and (b) Tauc’s plot of ZnO thin films for 
different temperatures. 

 
All deposited films exhibit good transmittance (≥ 75%) in the visible region, with a decrease in 

transmittance observed between 300 and 400 nm, corresponding to the fundamental absorption edge of 
ZnO related to electronic bandgap transitions. In the visible range (400-700 nm), optical transmittance 
increases significantly with deposition temperature, rising from approximately 75% at 300 °C to 80% at 
350 °C, and reaching about 85% at 400 °C. This improvement at higher temperatures is attributed to 
enhanced crystallinity and reduced defect density, as confirmed by XRD analysis, which showed 
narrower diffraction peaks and a stronger preferential orientation along the (002) plane. A better 
crystalline structure minimizes grain boundary scattering and defect-related absorption, thereby 
allowing more efficient light transmission through the films. Furthermore, SEM micrographs revealed a 
denser and more compact microstructure at higher deposition temperatures, which also contributes to 
reduced diffuse scattering. These combined effects improved crystal ordering, reduced internal stresses, 
and smoother, more compact surface morphology, result in superior optical transparency. Such high 
transmittance, particularly at 400 °C, is advantageous for photovoltaic applications, where maximizing 
light entry into the active layer is critical for device efficiency. 

The optical band gap energy (Eg) was estimated from the absorption spectra by analyzing the 

variation of the absorption coefficient (α) as a function of photon energy, in accordance with Tauc’s 
relation [51]: 

 (𝛼ℎ𝜗)𝑛 = 𝐴(ℎ𝜗 − 𝐸𝑔)   (10) 

where α, n, Eg, and ℎ𝜗 are the absorption coefficient, power factor of the transition mode, band-gap 

energy, and photon energy, respectively. Fig 4.b shows the plots of (𝛼ℎ𝜗)2 versus (ℎ𝜗) for the ZnO 
samples deposited at 300, 350, and 400 °C. Extrapolating the linear portion of each curve to the energy 
axis yielded Eg values of 3.26, 3.27, and 3.28 eV, respectively. This slight increase in Eg with deposition 
temperature can be attributed to the reduction of structural disorder and defect density within the films 
[32] as suggested by the XRD results showing improved crystallinity, a lower defect concentration 



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limits the formation of localized states within the band gap, thus sharpening the absorption edge and 
shifting it towards higher energies. Such behavior is consistent with reports in the literature [32] 
where improved atomic ordering at higher temperatures leads to a widening of the optical band gap. 
Furthermore, the combination of high transparency (up to 85% in the visible range) and a suitable band 
gap close to 3.28 eV makes the film deposited at 400°C particularly promising for use as an electron 
transport layer in photovoltaic devices. 
 
3.4. FTIR Analysis 

Figure 5 shows the FT-IR spectra of ZnO thin films deposited on glass substrates at different 
temperatures. The results indicate that the deposition temperature does not significantly affect the 
functional groups or chemical bonds present in the films. In the range of 3500 - 4000 cm-1, peaks 
characteristic of O-H vibrations are observed, independent of the deposition temperature. These may 
originate from the ethanol used as the solvent [52]. All samples also exhibit absorption bands at 2919 
and 760 cm-1, corresponding to the C-H stretching vibrations of alkane groups [53] likely derived from 
zinc acetate dihydrate. Peaks around 2150 cm-1 are associated with the O=C=O stretching mode of 
carbon dioxide, while a band at 1590 cm-1 is attributed to symmetric C=O stretching [54]. Signals 
between 700 and 1200 cm-1 correspond to H-O-H bending vibrations, due to the presence of 
crystallization water from the solvent [55]. The band at 883 cm-1 is also related to water deformation 
vibrations. Finally, the region around 460 cm-1, present in all samples, is characteristic of Zn-O 
vibrations, in agreement with previous studies [56]. 
 

 
Figure 5. 
FTIR spectra of ZnO thin films deposited at different temperatures. 

 

4. Conclusion  
ZnO thin films were deposited on glass substrates at 300 °C, 350 °C, and 400 °C using spray 

pyrolysis methods. The effect of temperature on the physical properties was studied. X-ray diffraction 
analysis showed that all films crystallize in the hexagonal wurtzite phase, with increasing preferential 
orientation along the (002) plane as the deposition temperature rises, due to enhanced atomic mobility. 

SEM images revealed that films grown at 350 °C and 400 °C are dense, uniform, and smooth, whereas 

those deposited at 300 °C exhibited a porous morphology with grain aggregates. Optical transmission in 
the visible region improved with increasing temperature, reaching a maximum transmittance of 85% at 

4000 3500 3000 2500 2000 1500 1000 500

0

50

100

150

200

250

300

C
-H

7
6
0

8
8
3

T
ra

n
sm

it
ta

n
ce

 (
%

)

Wavenumber (cm-1)

300°C

350°C

400°C

2
9
1
9

2
1
5
0

C-H

1
5
9
0

O=C=O C=O
Z

n
O

4
5
0

H
-O

-H



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400 °C, which is attributed to better crystallinity and reduced structural defects. The bandgap energy 

increased with deposition temperature, measuring 3.26 eV, 3.27 eV, and 3.28 eV for films deposited at 

300, 350, and 400 °C, respectively. FT-IR analysis confirmed the presence of characteristic Zn–O bond 

vibrations in all samples. Considering the structural, morphological, and optical properties, 400 °C is 
identified as the optimal deposition temperature for ZnO thin films intended for photovoltaic 
applications, providing enhanced crystallinity, surface quality, and optical transparency essential for 
device performance. 
 

Funding: 
This research work received financial support from Centre d’Excellence Régional pour la Maîtrise de 
l’Electricité (CERME) of the University of Lomé (crédit IDA 6512-TG, Don IDA 536IDA). 
 

Transparency: 
The authors confirm that the manuscript is an honest, accurate, and transparent account of the study; 
that no vital features of the study have been omitted; and that any discrepancies from the study as 
planned have been explained. This study followed all ethical practices during writing. 
 

Acknowledgements: 
The authors would like to thank FICCI-DST (Government of India) for their support through the CV 
Raman International Fellowship Program for African Researchers. 
 

Copyright:  
© 2025 by the authors. This article is an open access article distributed under the terms and conditions 
of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 
 

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