Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5, 2107-2125 2024 Publisher: Learning Gate DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate © 2024 by the authors; licensee Learning Gate * Correspondence: akharakit.c@dru.ac.th Design and evaluation of low-power switching power supplies using a zero- voltage boost converter with a snubber circuit Teerawut Savangboon1, Arckarakit Chaithanakulwat2*, Nuttee Thungsuk3, Thaweesak Tanaram4, Papol Sardyoung5 1,2,3Department of Electrical Engineering, Faculty of Science and Technology, Dhonburi Rajabhat University, Samut Prakan 10540, Thailand; teerawut.s@dru.ac.th (T.S.) akharakit.c@dru.ac.th (A.C.) nuttee.t@dru.ac.th (N.T.) 4Department of Power Electrical Engineering Technology, Faculty of Industrial Technology, Pibulsongkram Rajabhat University, 65000, Thailand; tummut2001@yahoo.com (T.T.) 5Department of Electrical Technology Industrial, Faculty of Industrial Technology, Thepsatri Rajabhat University, 15000, Thailand; papol_s@hotmail.com (P.S.). Abstract: Switching power supplies are widely popular because they are sufficiently small to fit all types of electrical appliances. Adjusting the pulse width modulation (PWM) of the switching power supply under high-frequency conditions often causes switching losses. PWM also causes electromagnetic interference (EMI) under high-frequency switching conditions. These problems can be solved using soft switching, which can adequately reduce the losses under switching conditions and EMI-induced noise. Therefore, this study describes the design and evaluation of a zero-voltage boost converter with a snubber circuit for a low-power switching power supply, which reduces the performance loss of the switching power supply under high-frequency conditions. This study was divided into two main parts. The first part focuses on the use of TMS320F28377S microcontrollers, which are outstanding in their precise control and can simulate switching within the MATLAB/Simulink program environment, and studies the switching behavior of boost converters in detail, making the switching power supply high performance and reliable. The second part focuses on evaluating the performance of the boost converter under different conditions, consisting of a state stimulated by the snubber circuit and a non-stimulated state by the snubber circuit. However, the evaluation showed that the boost converter in the space activated by the snubber circuit had an 85.16% increase in performance, which was 6.75% higher than that in the no-stimulation state with the snubber circuit. Similarly, the switching power supply can control and maintain a constant voltage, and this effect is satisfactory and reliable. Keywords: Boost converter, Microcontroller, Snubbers, Zero current, Zero voltage. 1. Introduction DC–DC converter-switching power supplies are important sought-after mechanisms for various renewable energy sources. This DC-DC converter mechanism, in which fast response to changes and easy control are desired, must increase the switching frequency to achieve high power. The device used in the converter and PWM should be small because of its high power and reduced noise level owing to its operation. This high switching frequency often results in high switching losses and electromagnetic interference (EMI) [1]. Therefore, their performance and efficiency are low. Soft-switching techniques have been used to overcome these side effects [2]. Soft switching is typically responsible for eliminating or reducing the switching losses and EMI noise. Therefore, the circuit developed and used to achieve soft switching is called a snubber circuit. In traditional DC-DC converters, the operation of the boost switch must first provide a voltage drop to zero, so that the PWM signal can be controlled to operate as https://orcid.org/0009-0007-0285-2919 https://orcid.org/0000-0002-1865-7508 https://orcid.org/0000-0003-3915-3242 https://orcid.org/0009-0007-3425-2678 https://orcid.org/0009-0006-2730-525 2108 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate a zero-voltage transition. Therefore, this control condition uses a snubber circuit to control the operation of the boost switch when turned off. Thus, the boost switch is activated with a zero-voltage transition without loss. The snubber switch turns on with zero-current switching using the same valve, and the boost diode turns off, but not completely [3]. Similarly, if the snubber switch is off, it turns off under heavy switching conditions. In addition, if the circuit operates at low loads, its operation is inefficient. However, various studies have investigated these problems by using common zero-voltage transition techniques. The method of reducing the current flow through the zero-boost switch while turning off the traditional boost converter is typically used to change the current to zero with a circuit. In this state, the boost-switch control signal is zero when the current is zero. Thus, the boost switch is switched off with a zero voltage change and no loss [4]. Additionally, the boost diode can be turned on under soft switching. The snubber switch and boost diode were turned off using hard-switching. In addition, the boost diode exhibited high reverse recovery loss. A study of these problems was presented to solve the zero-voltage transition technique by having the boost switch turn on with zero-current switching and turn off with zero-voltage transition [5]. Therefore, the switching power loss is reduced compared with that of conventional zero-voltage transition converters. Studies have shown that certain types of converters can reduce the switching losses. The current stress is high, and the overall efficiency is reduced owing to loss of circulation. Voltage stress also occurred at the snubber switches [6]. However, there are many other types of devices that support the flow of current through the boost switch in the circuit as well as devices that are used to support the flow of current through many snubber switches. However, the snubber circuit design process is difficult and complex. According to the literature on snubber circuitless converters, even with soft switching, boost switches are subjected to stress from large amounts of current and voltage. Therefore, soft switching by leaps occurs only in a small fraction of power consumption. According to relevant literature, booster converter circuits are often used in a variety of applications, including modifying the power factor of current LED lamps, voltage regulation, and renewable energy systems [7]. The demand for high power density has led to an increase in high- efficiency DC-DC power generation over the past few decades. Switching converters are a good option for achieving these goals, as they can support power levels of up to several kilowatts while still providing a high efficiency. Furthermore, switching converters, such as aerospace converters, are important, particularly in areas that require low weight. However, the main disadvantage of switching converters is their high stress level. Consequently, the voltage and current of power semiconductor devices and inductive components are overheated because of switching. Zero-voltage and zero-current switching are popular soft switching methods. This method minimizes the voltage and stress of the current in the inductor [8]. Therefore, the speed of change must also be reduced. Therefore, the inverted operation was turned off before the independent wheel diode began to operate. However, resonant snubber circuits have been used in some studies to help the boost switch turn on at zero voltage. However, there are now a variety of zero-voltage and zero-current transition techniques, and many specialized ICs have been produced [9]. Boost converter circuits are highly efficient, and a high step-up voltage gain is widely used in a wide range of applications such as offline AC to DC power supplies and solar power systems. However, a typical converter boost circuit may suffer from high voltage surges through the main power switch and losses in the switching power supplies of the DC-DC converter [10]. This is especially true in applications that require high voltage conversion ratios. In recent years, many researchers have focused on soft-switching techniques to reduce the voltage stress on boost switches and to reduce losses. Zero- voltage and zero-current transitions are the most popular soft-switching techniques for inverter-boost circuits [11]. This can be used to achieve a zero-voltage transition by adding a snubber circuit to the main power switch. The most common solution is to increase the number of snubber circuits, inductors, and capacitors in the circuit snubber to achieve soft-switching. In addition, boost converter operation was configured [12]-[13]. Consequently, the ratio of the maximum output voltage was reduced to 1:4 2109 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate of the input voltage to achieve a higher output voltage. This method involves the addition of a special switch and voltage multiplier to a common boost converter, called a booster converter, with a voltage multiplier cell. However, the voltage stress of the main power switch and diode in the voltage multiplier cell is high, particularly in the case of a high output voltage. Modern power semiconductor switches, including metal oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs), are widely used in power electronics systems, such as switch-mode power supplies, DC-AC converters, motor drivers, and electric vehicles [14]. Currently, power MOSFETs are the most widely used and reliable switches in power electronic systems. The control of the turn-on and turn-off of power MOSFETs is reliable, so it is used to control output power waveforms in applications such as motor drivers and DC-AC inverters. However, as mentioned in the previous subsection, power MOSFETs in boost converters are subjected to high-voltage stress and high turn-on losses. Moreover, a common solution with the addition of a passive snubber circuit results in a greater energy loss with the resistor. Snubber circuits can be used as active clamping circuits to solve the problem of voltage surges in main power switches, but special voltage clamping switches and drive circuits complicate this solution. Similarly, turning off an inductive boost switch is theoretically feasible because it can provide an increase in voltage to turn off the MOSFET and bring the power to zero. However, some practical problems may arise, such as power consumption of the control logic and conduction at high frequencies. This study aims to design and evaluate a zero-voltage boost converter with a snubber circuit for low-power switching power supplies to reduce losses and increase the efficiency of switching power supplies under high-frequency conditions. The objectives of this study are as follows: (1) Design and evaluation of a zero-voltage boost converter with a snubber circuit that uses a TMS320F28377S microcontroller to control the switching of power electronics. (2) Using a TMS320F28377S microcontroller, the switching of the device was simulated in the MATLAB/Simulink program environment to study the switching behavior of the boost converter. (3) The evaluation of the performance of this mechanism has two different operating conditions: operating and non-operating conditions of the snubber circuit. The remainder of this article is structured as follows: the second part of the proposed methodology, the third part of the research methodology, the fourth part of the results and discussion, and the fifth part of the conclusion. 2. Proposed Methodology This study aims to investigate and develop a zero-voltage transition technique for a booster converter circuit with the excitation of a snubber circuit. The zero-voltage transition technique has been widely used in literature. Compared with the traditional fixed-frequency switching method, this newly designed and developed zero-voltage transition technique can reduce the EMI problems. In addition, zero-voltage transitions and various soft-switching techniques have been investigated. Among them, the zero-voltage switching technique has attracted much attention because of its advantages, such as the possibility of turning on a power switch with zero voltage and reducing the voltage surge. Many researchers have used resonant switches to achieve soft switching in converters. However, the complexity of configuring different devices in circuits, waveforms, and voltage currents has become an obstacle in the development of resonant switches. Furthermore, it has been demonstrated that the zero- voltage transition technique for boost converters requires complex circuitry and control algorithms. However, the amount of energy transferred from the element and the switching frequency depend on the load conditions. However, the experimental results showed that the resonant current and voltage waveforms were successful, with the help of qualitative and quantitative analyses in the laboratory. Soft- switching characteristics and design rules were evaluated. It has also been successful in predicting large-signal behavior and in conducting theoretical analysis using a zero-voltage transition strategy designed and developed for boost converters. Similarly, snubber circuits are used to eliminate voltage and current surges in switching devices and provide a pathway for the discharge of inductive energy from switching devices, thereby causing a voltage surge rate and protecting the switch from high- 2110 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate voltage stress. In addition, the power loss of the resistors in the snubber circuits and the effects of the snubber circuits are discussed. It has also been shown to reduce the voltage stress in the boost switch and the power loss of the snubber circuits. This verifies that the goal of the stimulation with the snubber circuit can be achieved. The diagram in Fig. 1 shows a boost converter with a zero-voltage transition operating with snubber circuitry. This snubber circuit is intended to allow inductive current to flow when the switch encounters an electromagnetic force (EMF) due to the sudden turn-off of the switch. The function of the snubber circuit starts only when the switch is turned on and does not involve the turn-off of the snubber circuit, which can be customized to protect against voltage and current surges and does not need to absorb all energy [15]. However, because of the energy-absorption time, it can be designed to be longer than the turn-off time. The energy stored in the inductive converter was then transferred to the circuit capacitor. snubber and eventually dispersed with the resistor. However, as shown in Fig. 1, the proposed boost converter comprises a suppressor circuit with a snubber switching device, two resonant inductors, two resonant capacitors, and two snubber diodes. The designed boost converter begins with the operation of the boost switch [16]. It turns on with zero-voltage switching and off with zero-voltage switching. The snubber switch was turned on with zero-current switching, and closed with zero-voltage switching. The boost diode turns on with zero-voltage switching and turns off with zero-current switching, which does not affect the voltage or current stress of the boost switch or diode [17]. This voltage stress does not occur on the snubber switches and diodes if these switching devices are turned on and off under soft switching. However, the proposed converter can operate under the application of a required load without consuming a significant amount of energy. Therefore, the transient interval that occurs has a very small total in the switching cycle, thus causing switch Sb to open in a zero-voltage condition. In this research, the Opt for MOSFET-type semiconductor devices is the primary switch for boost converter switching devices. The reason for using this MOSFET is that capacitor power can only be recovered using the zero-voltage switching technique. An insulated gate two-pole transistor (IGBT) was chosen as the snubber switch because the zero-voltage transition can protect the tail current when it is closed. Figure 1 shows that the main circuit of the converter consists of Vi, which is the input voltage supply that converts AC-DC to a circuit. bridge rectifier. Sb is the boost switch in the boost circuit, LF is the main inductor in the boost circuit, and Cf is the capacitor used to filter the output ripper, Df. It is the boost diode in the boost circuit, and CS is the capacitor in the buffer circuit linked to the boost converter. As for the snubber circuit section, it consists of Dr, Da as snubber diodes, Cr, Ca, and Lr as resonance capacitors and resonant inductors respectively, with Sn as the control switch in the snubber circuit. Fig. 1 If circuit theory is used to analyze the characteristics of the circuit in the overall configuration, a constant input voltage (Vi) is obtained. Capacitor (Cf) must be sufficiently large to maintain a constant output voltage. Similarly, the inductor (Lf) must be large enough to filter and maintain the required input current ripples, and more importantly, the inductor (Lf) must be much larger than Lr. However, let us assume that all semiconductor devices are appropriate, and that the recovery times of Dr and Da, except for Df, which is ignored, ignore the voltage drop. 2111 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate Figure 1. Diagram of a zero-voltage boost converter with a snubbers circuit. 3. Research Methodology The following sections describe the definitions and principles involved, as well as the operational procedures proposed in this study, which are described in detail. 3.1. Analysis of Operation Figure 2. Equivalent circuit of the boost converter and snubber. Figure 2 Equivalent circuits of boost converters and snubber circuits designed and used for performance evaluation based on the configuration defined in. Fig. 3. shows the operating status of the 2112 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate boost converter and the snubber in one cycle. This equivalent circuit can convert the operating state into ten states, as shown in Figure 3 (a) – (j). Figure 3. Schematics of the operation stages of the boost converter and snubber. Figure 3 (a) Stage 1: t0 < t < t1. Boost switches Sb and Sn are in a normal turn-off state as the starting state. In this starting state, IL flows to the output through Df according to the turn-off state of a typical boost converter. This state yielded the following attributes: t = t0, Ib = 0, IDf = IL, ILr = In = 0, VCa = Vo, and VCr = 0. However, the PWM signal is applied to control the switch Sb at t = t0, which is the initial 2113 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate interval. Similarly, IDf is reduced, and Cr is simultaneously charged at the same time. ILr (t) and the voltage of VCr (t) can be expressed as follows: 1 1 1 cos aC o o o V V t V − −  =   −  (1) ( )1( ) coscr o oV t V t V= − + (2) ( )1 1 ( ) sino Lr V I t t Z = (3) From equations (1) - (3) when defined as 1 r r L Z C = and 1 1 r rL C  = (4) Similarly, at t = t1, the current flowing through IDf decreases to zero and the current flowing through In increases by equal to the input current. Therefore, Sn will turn on with zero-current switching because Lr is connected in series and Df will turn off with zero-current switching [18]. Figure 3 (b) Stage 2: t1 < t < t2. In this initial state, time t = t1 yields characteristics Ib = 0, ILr = In = IL, IDf = 0, VCsb = VCr = Vo, and VCr = VCa. Similarly, in this initial state, the Df is turned off, Thus the differentiation of resonsnces through Csb-Da-Sn-Lr-Cr and Ca–Sb–Lr–Cr. The energies of the Csb and Ca capacitors are transferred to Lr and Cr. ILr(t) and VCa(t) can be expressed as follows: ( )2 2 ( ) sinCa o Lr L r V V I t I t L   − = − (5) ( ) ( )2( ) ( ) cosCr Csb Ca o CaV t V t V V t V= = − − + (6) From Equation (5) and Equation (6), when ( ) 2 1 r a sbL C C  = + (7) Similarly, at t = t2, Dr starts (turns on) with zero-voltage switching as soon as the Cr capacitor voltage g is VCr = VL); thus, this state ends. However, Csb and Ca discharges are equal to VCa until the end state and the current of the resonant inductor is equal to ILr. The resonances beginning in the previous stage continue through Csb–Da–Sn–Lr–Dr–VL and Ca–Sb–Lr–Dr–VL. The current ILr increased, whereas VCsb and VCr decreased. The current ILr has its maximum value ILr = ILrmax when VCsb and VCr are equal to VL, after which the current of the resonant inductor is equal to the maximum value, and because of the negative voltage generated between the terminals of lr, ILr begins to decrease continuously [19]-[20]. Similarly, voltages VCsb and VCr were also reduced. ILr(t) and VCr(t) can be expressed as follows: 2114 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate ( )3 3 ( ) sino i Lr Lr V V I t t I Z  − = + (8) ( ) ( )3( ) ( ) cosCa Csb o i iV t V t V V t V= = − + (9) The duration of this period was determined using the following equation (10) 1 23 3 1 1 cos i o V t V V −  − =   −  (10) Therefore, Z3 and 3 were obtained from the equation (11) and equation (12) 3 r ra sb L Z C C = + (11) ( ) 3 1 r ra sbL C C  = + (12) At t = t3, VCsb and VCa are zero. Similarly, the ILr current is greater than the input current, and VCsb and VCa are equal to zero (VCsb = VCa = 0). However, the residual current of the input current Lr begins to flow through the antiparallel diode Sb, where this state is complete. Figure 3 (d) Stage 4 (t3 < t < t4) begins at t = t3, ISb = (IL−ILr), ILr = ISn = ILr, IDf = 0, VCsb = VCr = 0, and VCr = Vi. This state begins when the antiparallel diode of Sb is turned on and ILr is reduced to a linear value until it drops to equal IL. However, to operate the soft switch for the primary switch, PWM signal control must be implemented while the parallel protection diode of Sb is in the turn-on state. Similarly, during this period, the PWM signal control is directed to control the boost switch while the boost switch voltage is zero. Therefore, Sb was completely turned on with a zero-voltage transition. However, the state in which the Sb antiparallel diode is in the turn-on state is called a zero-voltage transition. The ILr(t) can be expressed as (13) and (14) 34 Lr r i I t L V = (13) ( ) i Lr Lr r V I t t I L = + (14) Similarly, at t = t4, this state is completed when the current of the resonant inductor decreases to equal IL. Figure 3 (e) Stage 5: (t4 < t < t5) The start time of this state is t = t4, Ib = 0, ILr = In = IL, IDf = 0, VCb = VCa = 0 and VCr = Vi. However, at t = t4, Ib increases and varies with the input current, and the current of ILr decreases to zero. Similarly, ILr(t) can be expressed as (15) and (16) 2115 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate 45 L r i I t L V = (15) ( ) i Lr L t V I t t I L = − + (16) Similarly, t = t5, the state of Ib = Ii (IL), and ILr = 0, which is the Da and Dr turn-off period with zero-current switching, thus completing this state. Figure 3 (f) Stage 6: (t5 < t < t6) The beginning of this state is t = t5, Ib = IL, ILr = In= 0, IDf = 0, VCs = VCa = 0 and VCr = Vi. This state is initiated when the current of ILr is zero and the current of Ib is equal to the input current [21]. Similarly, the boost switch turns on the input current and the resonant inductor is initiated between Cr, Lr, and Ca. Thus, the energy of Cr is transferred to Lr and Ca through antiparallel diode Sn. In this case, the VCr voltage continued to decrease until it was restarted. Similarly, as VCa increased, ILr increased. The ILr current in the reverse direction causes VCr and VCa to remain constant. During this period, the ILr continued to decrease. The snubber switch-control PWM signal Sn is removed during this period, when the antiparallel diode of Sn is in the turn-on state. Therefore, Sn was completely turned off with a zero-voltage transition [22]. The VCr(t) and VCa(t) resonant capacitors can be expressed as (17) and (18) ( )( ) cosi x i x cr x r a V C V C V t t C C = + (17) ( )( ) cosi x i x ca x a r V C V C V t t C C = + (18) From Equation (17) and Equation (18), when Cx and x are equation (19) and (20) r a x r a C C C C C = + (19) 1 x r xL C  = (20) Similarly, this state is complete if t = t6, because the energy of Cr begins to be transferred to Ca. Figure 3 (g) Stage 7: (t6 > t > t7) This is the turn-on state of a typical boost converter. During this stage, the snubber circuit does not operate and Sb continues to turn on, which is equal to the input current. At t = t7, the control PWM signal of Sb is removed and the procedure is complete. Fig. 3 (h) Stage 8: (t7 < t < t8) In this initial state, Ib = IL, ILr = In = 0, IDf = 0, VCb = 0, VCa = Vi and VCr = 0. Cb is then charged, causing VCa to peak under a constant input current. In this case, the voltage rise is limited by Cb, thus causing Sb to switch to zero voltage [23]. Therefore, the VCn (t) snubber circuit can be expressed as (21) and (22) 2116 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate 78 i s i V t C I = (21) ( ) L cb b I V t t C = (22) Similarly, at t = t8, the voltage of Cb is equal to that of Ca (VCb = VCa = Vi), Da turns off under zero-voltage switching, and this state is completed. However, when Da was turned on with zero- voltage switching, the voltage of Cb was equal to that of Ca [24]. Similarly, both Cb and Ca charge linearly under a constant input current, and VCa(t) resonant capacitor can be represented as follows: ( ) ( ) L ca Cb a b I V t V t C C = = + (23) the time of this interval is 89 ( )o a b L V t C C I = + (24) However, at t = t9, the voltages of Cb and Ca are equal to VCb = VCa = Vo; at the same time, Df will turn on with zero-voltage switching, and Da will turn off with zero-voltage switching; this state is completed. Figure 3 (j) Stage 10: (t9 < t < t10) This state is Ib = 0, In = 0, IDf = IL, VCb = VCa = Vo, and VCr = Vi. This state begins when Df is switched on under zero voltage switching. In this state, power from the input and main inductors is transferred to the output, where the load is relayed in the circuit. However, at the end of this state, the transition period is complete and returns to its initial state condition. 3.2. Design Principles This section describes the design principle of the zero-voltage boost converter with a circuit. The snubber in this research is divided into two components: a boost converter design part and a snubber circuit design part, which contain the evaluation parameters listed in Table 1. However, for this evaluation, the configuration duty cycle (D) = 70%, the estimated efficiency (η) = 95%, the estimated ripple input (ΔIL) = 20%, and the approximate input power (Pi) = 640 W, so the maximum value of the input current (Iimax) is 1 max 1 640 1.15 1.15 7.37 100 i P I A V     = = =       Similarly, once the maximum input current is determined, the snubber inductor can be selected as 2117 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate 9 max 300 3 55 10 2.24 7.37 o r rr i V L t H I −= =    This design required a snubber circuit switch device to support high currents of up to 3Iimax. Therefore, the capacitance of Cr must not exceed 10 nF. The proposed boost converter uses a PWM signal to control the boost switch when the boost switch has zero voltage and Sb current is negative. Therefore, the boost switch operates under zero-voltage transition. Similarly, a zero-voltage transition period occurs when the Sb current is negative, as described in Stage 4. Table 1. Parameters of the design and evaluation of the mechanism. Parameter Symbol Value Output voltage Vo 300 V Input voltage V1 100 V Output power Po 500 W Switching frequency fs 100 kHz Main inductance Lf 450 H Output capacitor Cf 300 F Resonance inductance Lr 4.5 H Resonance capacitor 1 Cr 10 nF Resonance capacitor 2 Ca 10 nF Snubber capacitor Cs 3.5 nF Boost diode Df 80 A/600 V/trr = 55x109 Snubber diode 1 Dr 80 A/600 V/trr = 55x109 Snubber diode 2 Da 80 A/600 V/trr = 55x109 However, the minimum zero-voltage transition period was calculated as 548 ns. As shown in Figure 4 (b), the zero-voltage change depends on the time and value of Cr and Ca capacitors. Therefore, the values of Cr and Ca capacitors used must not exceed 10 nF. In the design of the Lr inductor and Ca capacitor, the optimal value of the Lr inductor is 6 μH and the value of the Ca capacitor is 10 nF. If the design is designed to increase the value, the duration of the zero-voltage and zero-current transitions will increase, which causes a loss of renewable energy. Thus, the loss in the entire system increases, and the efficiency decreases. Similarly, this boost converter offers a Cs capacitor, that is, the capacitor of the snubber circuit, and the turn-off time of the boost switch should be greater than the zero-voltage transition. Therefore, the value of capacitor Cs is defined as 3.3 nF. 4. Results and Discussion This topic involves conducting experiments on the designed and constructed mechanisms. However, during the evaluation, we simulated the results using the MATLAB/Simulink program and compared them with the actual measurements taken from the created mechanisms. Our assessment focused on the initial power loss and performance of the boost converter circuit, with specific attention paid to evaluating the effectiveness of the zero-voltage switch. Additionally, we evaluated the performance of both non-sububber and snubber excitation circuits in the second part of our evaluation. Nevertheless, the MATLAB/Simulink program offers a user-friendly simulation schematic that provides accurate results. This is illustrated in Fig. 4. 2118 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate F i g u r e 4 . Schematic of the simulation implemented in MATLAB/Simulink. The analysis involved investigating the behavior of the device within the circuit. The main waveform related to the zero-voltage switch operation of the boost converter is measured when the snubber is activated. The measured waveform was then compared to the waveform generated using the MATLAB/Simulink simulation, as shown in Fig. 5. F i g u r e 5 . Experiments on boost converter and snubber. As shown in Figures 6 (a) and (b), the operation occurred during the time interval t0 < t < t1. During this time, Sb and Sn were in the turn-off state, allowing the input current to flow through diode Df. This turning off of the boost converter circuit occurs before t = t0, and the specific parameters are set as t = t0, Ib = 0, IDf = IL, ILr = In = 0, VCa = Vo, and VCr = 0. As switch Sn 2119 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate turns on at t = t0 with a certain ratio of the PWM waveform, Da is enabled under zero- current switching conditions. This led to an increase in the current of Sn and a decrease in IDf. Simultaneously, Cr was also charged. Similarly, at t = t1, IDf decreases to zero and the current of Sn approaches the input current. Simultaneously, Cr is charged to a certain VCa. This implies that Sn operates under zero-current switching conditions because the series Lr and Df are turned off. Simulation Experimental (a) PWM of the Sb switch Simulation Experimental (b) PWM of the Sn switch F i g u r e 6 . Simulation and experimental results of the switch operation . Figure 6 (a) and (b) show the design and evaluation of a zero-voltage boost converter with a snubber circuit that uses a TMS320F28377S microcontroller to control the switching of power electronics. It was found that the mechanism can be operated for its intended purpose. Similarly, using a TMS320F28377S microcontroller simulating the switching of a device in the environment of a MATLAB/Simulink program, the switching behavior of the boost converter can be objectively studied and the theoretical accuracy described can be confirmed. Figure 7. When T1 < T < T2, the initial state is T = T1, and the characteristics of the voltage and current in different devices are Ib = 0, ILr = In = IL, IDf = 0, VCsb = VCr = Vo, and VCr = VCa. However, once the diode (Df) turns off, two distinct resonance characteristics are observed in the configurations of Csb-Da-Sn-Lr-Cr and Ca–Sb–Lr–Cr. The energy stored in the Cs and Cr capacitors is then transferred to Lr and Cr. When t = t2, the snubber diode Dr is activated using zero-voltage switching conditions as soon as the capacitor voltage Cr matches the input voltage. At this 2120 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate point, the Ca and Cr capacitors discharge from the VCa voltage and reach the end of their discharge cycle. Simulation Experimental Fig ure 7 . Simulation and experimental results of the device. The above experiments can determine whether the mechanism can work as intended, and from the simulation, the switching behavior of boost and snubber converters can be studied. Figure 8 (a) and (b) show that the above experiments can be used to determine whether the mechanism can work as intended, and the switching behavior of the snubber can be studied. When the condition begins at time t = t2, the device in the circuit will have a current and voltage represented by Isb = 0, ILr = Isn, IDf = 0, VCs = VCr = Vca and Vcr = Vi. Stage 2 resonance continued through the Cs-Da-Sb-Lr-Dr-Vi 2121 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate and Cr-Sb-Lr-Dr-Vi pathways. During this process, the current of the ILr inductor increases, whereas the voltages Vcs and Vcr decrease. F i g u r e 8 . 2122 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate Snubber switch simulation and experimental results . Once the current in the inductor reaches its maximum, ILr starts to decrease owing to the negative pressure at the terminals of the Lr inductor. Consequently, voltages Vcs and Vcr also decrease synchronously. Nevertheless, in the subsequent section, a prototype mechanism trial was devised to juxtapose the performance traits of two distinct categories: one incorporating a zero-voltage switch, and the other devoid of such a switch. The device parameters for this evaluation are listed in Table 1, which has already been described above. Based on the specifications listed in Table 1, the tests included an input voltage of 100 volts and an output voltage of 300 volts. The switch frequency used in this experiment was 100 kHz. This mechanism could supply power to a load of 500 W. This experimental procedure examines the input and output currents of a specially designed mechanism to evaluate the relationship between the input and output powers as well as the overall performance. As shown in Table 2, the results of the experiments clearly demonstrate that the zero-voltage switches exhibit a significantly superior performance. Table 2. Performance comparison of the two switch characteristics. To validate the experiment, the prototype mechanism was compared with a simulation. The results obtained from the analysis of Fig. 9 (a) and (b) indicate that the operation of the Sb switch under zero- voltage switching conditions introduces new intervals for voltage and current switching, resulting in the smooth operation of the switch. This significantly reduces the stress on the switch device and minimizes electromagnetic interference (EMI). These findings are considered satisfactory. However, it is important to note that achieving a complete soft switch requires an appropriate design of the inductor, capacitor, and PCB layouts tailored to a specific application. Figure 9. The operating state of the zero-voltage switch master mechanism with snubber. Status ZVS Vin (V) Iin (A) Pin (W) Vout(V) Iout(A) Pout(W)  (%) Operate 100 6.4 640 315 1.73 545 85.16 Non operate 100 6.8 680 307 1.76 540 78.41 2123 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate Figure 9 . (a) and (b) Analysis of current operation under conditions with a snubber circuit, referring to the functioning of an electrical system that includes the use of a snubber circuit. A snubber circuit is a protection mechanism that is connected in parallel with a load or switch, and helps control and manage the voltage or current in the circuit. In this context, the current operation under conditions with a snubber circuit involves the flow of electrical current through the circuit while the snubber circuit is actively functioning. The snubber circuit is designed to absorb and dissipate excess energy or voltage spikes that may occur in the circuit, thereby protecting sensitive components from damage. During current operation, the snubber circuit operates in conjunction with a load or switch, allowing the electrical current to flow through the circuit while regulating and protecting against sudden surges or fluctuations in voltage. This ensures the smooth and efficient operation of the electrical system while minimizing the risk of damage to components or equipment. Overall, current operation under conditions with a snubber circuit involves the safe and controlled flow of electrical current through the circuit, owing to the presence of a snubber circuit that helps protect against voltage spikes and fluctuations. Simulation Experimental (a) (b) Figure 10. The operating state of the no-switch conditions master mechanism. Similarly, the results of the experiments conducted under no-switch conditions at zero voltage are shown in Fig. 10 (a) and (b). However, it has been discovered that abruptly turning off the switch during periods and high-frequency ranges can trigger activation of the Sb switch. This can lead to elevated stress levels, increased electromagnetic interference (EMI), and other effects. It should be noted that damage, particularly to the switching device, is a potential outcome in a circuit failure. However, comparing the experimental and simulation results can establish the accuracy of the research hypotheses set forth in the objectives. However, after conducting experiments on the prototype mechanisms and comparing them with simulations, it is evident that there is a certain level of consistency that affirms their principled validity and reliability. Furthermore, it is important to note that the performance of a mechanism varies with changes in input voltage. In the following section, we provide conclusions and recommendations for those interested in further advancing this topic. 5. Conclusion This study introduces a technique called the zero-voltage switch for the boost converter mechanism. This technique involves the use of snubber band excitation through the microcontroller control 2124 Edelweiss Applied Science and Technology ISSN: 2576-8484 Vol. 8, No. 5: 2107-2125, 2024 DOI: 10.55214/25768484.v8i5.1959 © 2024 by the authors; licensee Learning Gate TMS320F2879D to generate the boost switch control signal (Sb) for the boost converter circuit. In addition, the contract circuit uses a snubber switch (Sn) in the snubber mechanism. However, the evaluation and experiments were conducted in accordance with three defined objectives. An analysis of the boost switch waveform shows that, during the turn-off phase, the current in the boost switch flows in the negative direction, whereas during the turn-on phase, the current flows in the positive direction when the voltage is zero, which follows the method described above. The experimental results were compared with simulations using the MATLAB/Simulink program, and the waveform characteristics were found to be consistent. By incorporating snubber excitation, it was observed that the efficiency of the boost circuit can be increased to 85.16%, which is 6.75% greater than that without a zero-voltage switch. If the simulation evaluation results are considered and analyzed in comparison with the prototype mechanism, the results are similar. However, the simulation using MATLAB/Simulink is a mathematical simulation that does not have any dynamic effects. Similarly, experiments with prototype mechanisms have many effects, such as duty cycle ratio, operating frequency adjustment, and equipment parameter tolerance. Furthermore, a boost converter circuit with snubber excitation can operate reliably even under voltage drop or overvoltage conditions because it eliminates stressful situations and prevents equipment breakdown caused by EMI losses. Similarly, regarding recommendations and guidelines for enhancements, prospective individuals should carefully select and devise the most appropriate apparatus to ensure the long-lasting nature of the PCB and its mechanism, ultimately resulting in enhanced efficiency. However, one must also consider the character of the generation process of the digital control signal when determining the frequency of switches to effectively satisfy the required responsiveness. Acknowledgment: The researchers and working group express their gratitude to Dhonburi Rajabhat University, Thailand, for their support in providing laboratories and research instruments that allowed them to successfully achieve their objectives. Copyright: © 2024 by the authors. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). References [1] da Silva, Evandro Soares, et al. "An improved boost PWM soft-single-switched converter with low voltage and current stresses." IEEE Transactions on Industrial Electronics 48.6 (2001): 1174-1179. [2] Li, Wuhua, et al. "Interleaved converter with voltage multiplier cell for high step-up and high-efficiency conversion." IEEE transactions on power electronics 25.9 (2010): 2397-2408. [3] Mohammadsalehian, Shamim, et al. 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