Plane Thermoelastic Waves in Infinite Half-Space Caused FACTA UNIVERSITATIS Series: Electronics and Energetics Vol. 30, N o 3, September 2017, pp. 429 - 429 DOI: 10.2298/FUEE1703429E Corrigendum Tomislav Suligoj, Marko Koričić, Josip Žilak, Hidenori Mochizuki, So-Ichi Morita, Katsumi Shinomura, Hisaya Imai HORIZONTAL CURRENT BIPOLAR TRANSISTOR (HCBT) – A LOW-COST, HIGH- PERFORMANCE FLEXIBLE BICMOS TECHNOLOGY FOR RF COMMUNICATION APPLICATIONS. Facta Universitatis, Series: Electronics and Energetics (FU Elec Energ), Vol. 28, No 4, December 2015, pp. 507 - 525. DOI: 10.2298/FUEE1504507S  The Editor-in-Chief has been informed that in the article Tomislav Suligoj, Marko Koričić, Josip Žilak, Hidenori Mochizuki, So-Ichi Morita, Katsumi Shinomura, Hisaya Imai. Horizontal Current Bipolar Transistor (HCBT) – A Low-Cost, High-Performance Flexible BICMOS Technology for RF Communication Applications. Facta Universitatis, Series: Electronics and Energetics, Vol. 28. No 4, 2015, pp. 507-525. DOI: 10.2298/FUEE1504507S Fig. 15 with its legend has been ommited in published version of the paper. After further discussion with the corresponding author, Editor-in-Chief has decided to publish a corrigendum for this article, providing the figure and legend of Fig. 15. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 -13 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 I C C u rr en t, ( A ) Base-Emitter Voltage, (V) Single-poly Double Emitter V CE =2 V I B 0 2 4 6 8 10 0 20 40 60 80 100 C o lle ct o r C u rr en t , ( A ) Collector-Emitter Voltage, (V) w hill =0.36 m w hill =0.5 m w hill =0.6 m single poly HCBT I B =0.1 A (a) (b) Fig. 15 Measured DC characteristics of double-emitter (DE) HCBT: (a) Comparison between the Gummel characteristics of DE HCBT with n-hill width whill=0.36 µm (b) Output characteristics of DE HCBTs with different n-hill widths (whill). Single polysilicon region HCBT is added for the reference. Link to the corrected article doi:10.2298/FUEE1504507S Received March 2, 2017 doi:10.2298/FUEE1504507S