id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-10684	Lazzaz, Abdelaziz; Bousbahi, Khaled; Ghamnia, Mustapha	PERFORMANCE ANALYSIS OF FINFET BASED INVERTER, NAND AND NOR CIRCUITS AT 10 NM ,7 NM AND 5 NM NODE TECHNOLOGIES	2023	16	.pdf	application/pdf	5632	268	59	Performance Аnalysis of FinFET based Inverter NAND and NOR Circuits at 10 nm, 7 nm ... 13 Table 3 Calculated parameters of different CMOS FinFET gates Device FinFET NOT gate FinFET NAND gate FinFET NOR gate Technlogy node 10 nm 7 nm 5 nm 10 nm 7 nm 5 nm 10 nm 7nm 5 nm VDD 0.80 0.8 0 0.65 0.80 0.80 0.65 0.80 0.80 0.65 VSP(V) 0.385 0.385 0.386 0.397 0.391 0.3999 0.379 0.373 0.371 VIL(V) 0.3243 0.3243 0.3189 0.3445 0.3445 0.3351 0.3148 0.3189 0.3202 VOH(V) 0.7750 0.7687 0.7656 0.7509 0.7562 0.7562 0.7187 0.7718 0.7562 VIH(V) 0.4378 0.4391 0.4418 0.4513 0.4472 0.4472 0.4189 0.4216 0.4437 VOL(V) 0.0531 0.0406 0.0406 0.0375 0.0437 0.0406 0.0343 0.05 0.0437 NML(V) 0.2712 0.2836 0.2782 0.3070 0.3007 0.2944 0.2804 0.2689 0.2764 NMH(V) 0.3372 0.3296 0.3238 0.2996 0.3090 0.3090 0.2998 0.3502 0.3125 td (ps) 1.6 1.5 1.4 2.20 2.20 2.10 1.10 1.10 1.0 P( W ) 0.446 0.357 0.460 0.475 0.686 0.5950 0.325 0.416 0.401 PDP (10-18W.s) 0.7136 0.5355 0.6440 1.0450 1.5092 1.2495 0.3575 0.4576 0.4010 P: power dissipation in static CMOS, PDP: Power Delay Product. So, the above literature survey indicates the importance of using high-k dielectrics in FinFET devices and the importance of multi gate FinFET to overcome the SCE and to improve the channel control.	cache/fuelectenerg-10684.pdf	txt/fuelectenerg-10684.txt