id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-12276	Rao, G. Purnachandra; Lenka, Trupti Ranjan; Nguyen, Hieu Pham Trung	REALIZATION OF KINK EFFECT IN THE DRAIN CHARACTERISTICS OF III-NITRIDE/Β-GA2O3 NANO-HEMT DUE TO TRAPS AND SELF-HEATING	2024	11	.pdf	application/pdf	4684	276	57	[15] C. Sharma, R. Laishram, Amit, D. S. Rawal, S. Vinayak and R. Singh, Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices, AIP Adv., vol. 7, no. 8, p. 085209, 2017. HEMT devices are immensely beneficial for high-frequency and high-power based applications due to their excellent mobility and exceptional saturation velocity.	cache/fuelectenerg-12276.pdf	txt/fuelectenerg-12276.txt