id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-13032	Broche, Anisleidy; Cerdeira, Antonio; Iñiguez, Benjamin; Estrada, Magali	DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS	2024	9	.pdf	application/pdf	3812	190	57	Several 2D semiconductor materials are being studied, among which dichalkogenide transition metals (TMDs) with a bandgap above 1 eV, as MoS2, are among the most studied 2D materials for FET devices [3]. In the last years, the possibility of using 2D semiconductors to continue further scaling of metal-oxide-semiconductor field effect transistors has attracted much attention.	cache/fuelectenerg-13032.pdf	txt/fuelectenerg-13032.txt