id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-1709	Pejovic, Milic Momcilo	P-CHANNEL MOSFET AS A SENSOR AND DOSIMETER OF IONIZING RADIATION	2016	33	.pdf	application/pdf	12701	772	65	17 Threshold voltage shift VT as a function of radiation dose of gamma and X-ray D, for 1 m gate oxide thick layer RADFETs irradiated with Virr = 5V. 526 M. PEJOVIĆ Fitting of experimental data for gamma radiation dose in the range from 0 to 5 Gy (Figs. 16 and 17) using the expr. 12 Sensitivity S as a function of gate bias Virr during irradiation for RADFETs with a 100 nm thick gate oxide layer for radiation dose of 50 Gy. Fig.	cache/fuelectenerg-1709.pdf	txt/fuelectenerg-1709.txt