id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-198	Novkovski, Nenad	PHYSICAL MODELING OF ELECTRICAL AND DIELECTRIC PROPERTIES OF HIGH-k Ta2O5 BASED MOS CAPACITORS ON SILICON	2014	15	.pdf	application/pdf	7365	403	64	[34] M. Houssa, M. Tuominen, M. Naili, V. Afanas’ev, A. Stesmans, S. Haukka and M. M. Heyns, “Trap- assisted tunneling in high permittivity gate dielectric stacks”, J. Appl. Increase of the leakage currents with the stress has been attributed to the degradation of the interfacial layer by creation of high density of defects in a part of it.	cache/fuelectenerg-198.pdf	txt/fuelectenerg-198.txt