id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-2163	Vandana, B; Das, Jitendra Kumar; Patro, B Shivalal; Mohapatra, Sushanta Kumar	EXPLORATION TOWARDS ELECTROSTATIC INTEGRITY FOR SIGE ON INSULATOR (SG-OI) ON JUNCTIONLESS CHANNEL TRANSISTOR (JLCT)	2017	8	.pdf	application/pdf	3145	200	68	In short channel devices the channel is predominated by gate with affecting electric field lines from source to drain. Though the device takes the Si material properties, the concentration of the Ge at SiGe channel will affect the electric field at low VTH.	cache/fuelectenerg-2163.pdf	txt/fuelectenerg-2163.txt