id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-2264	Pesic-Brdjanin, Tatjana	SPICE MODELING OF IONIZING RADIATION EFFECTS IN CMOS DEVICES	2016	18	.pdf	application/pdf	6328	302	62	NQS MOS transistor model In [13] a physically based NQS MOS transistor model is described, which belongs to a group of models based on surface potential. NQS SOI transistor model A compact model for n-channel fully depleted SOI MOS transistor with double gate (FD SOI transistor) is developed based on the NQS MOS model, and it is applicable for asymmetrical and symmetrical planar structures [14].	cache/fuelectenerg-2264.pdf	txt/fuelectenerg-2264.txt