id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-2941	Estrada, Magali; Hernandez-Barrios, Yoanlys; Moldovan, Oana; Cerdeira, Antonio; Lime, Francois; Pavanello, Marcelo; Iñiguez, Benjamin	EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS IN-GA-ZN-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE	2017	9	.pdf	application/pdf	3891	168	55	Key words: amorphous oxide semiconductor, thin-film transistor, behavior with temperature, distribution of states 1. INTRODUCTION In 2004, Nomura et al. [1] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, pp.	cache/fuelectenerg-2941.pdf	txt/fuelectenerg-2941.txt