id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-344	Mohapatra, Sushanta; Pradhan, Kumar; Sahu, Prasanna	RESOLVING THE BIAS POINT FOR WIDE RANGE OF TEMPERATURE APPLICATIONS IN HIGH-K/METAL GATE NANOSCALE DG-MOSFET	2014	7	.pdf	application/pdf	2963	152	61	At low gate bias the VGSVth(T) term causes the ID to increase with increasing temperature because a low Vth is predicted at higher temperatures. From Fig. 5(b), high gain can be observable for high temperatures in 618 S. K. MOHAPATRA, K. P. PRADHAN, P. K. SAHU subthreshold regime and just a reverse effect in above threshold region.	cache/fuelectenerg-344.pdf	txt/fuelectenerg-344.txt