id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-360	Paskaleva, Albena; Hudec, Boris; Jančovič, Peter; Fröhlich, Karol; Spassov, Dencho	THE INFLUENCE OF TECHNOLOGY AND SWITCHING PARAMETERS ON RESISTIVE SWITCHING BEHAVIOR OF Pt/HfO2/TiN MIM STRUCTURES	2014	10	.pdf	application/pdf	4911	257	30	All switching parameters (Vform, Vset, Vreset, ON/OFF ratio) could be substantially changed by the surface engineering, hence the amount of O and its bonding in TiO-based film as well as RS layer thickness and switching conditions should be carefully optimized to obtain stable RS effects with controllable switching behavior. [14] Y. S. Lin, F. Zheng, et al., “Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices”, J. Appl.	cache/fuelectenerg-360.pdf	txt/fuelectenerg-360.txt