id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-3869	Davidović, Vojkan; Danković, Danijel; Golubović, Snežana; Djoric-Veljkovic, Snežana; Manić, Ivica; Prijić, Zoran; Prijić, Aneta; Stojadinović, Ninoslav; Stanković, Srboljub	NBT STRESS AND RADIATION RELATED DEGRADATION AND UNDERLYING MECHANISMS IN POWER VDMOSFETS	2018	22	.pdf	application/pdf	11718	584	58	The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. Second concept includes integration of different devices, such as passives, analog/RF, power devices, sensors and actuators and biochips.	cache/fuelectenerg-3869.pdf	txt/fuelectenerg-3869.txt