id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-6011	Rajput, Renu; Vaid, Rakesh	FLASH MEMORY DEVICES WITH METAL FLOATING GATE/METAL NANOCRYSTALS AS THE CHARGE STORAGE LAYER: A STATUS REVIEW	2020	13	.pdf	application/pdf	7252	388	59	[52] G. Chen, Z. Huo, L. Jin, Y. Han, X. Li, Su Liu and M. Liu, “Metal floating gate memory device with SiO2/HfO2 dual-layer as engineered tunneling barrier”, IEEE Electron Device Lett., vol. 35, pp. Recently, floating gate memory devices consisting of discrete metal nanocrystals have received huge attention due to their excellent memory performance and high scalability.	cache/fuelectenerg-6011.pdf	txt/fuelectenerg-6011.txt