id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-869	Jena, Biswajit; Pradhan, Kumar Prasannajit; Sahu, Prasanna Kumar; Dash, Sidharth; Mishra, Guru Prasad; Mohapatra, Sushanta Kumar	INVESTIGATION ON CYLINDRICAL GATE ALL AROUND (GAA) TO NANOWIRE MOSFET FOR CIRCUIT APPLICATION	2015	7	.pdf	application/pdf	3052	172	65	It is clear from Table 2 that while the gate length is reduced the analog performance like transconductance (gm) is increased because of high drain current for shorter gate length devices. Drain current (ID) in log scale as a function of the gate to source voltage (VGS) for VDS=50 mV for different φM (a) SM-CGAA (b) DM-CGAA Fig. 4 (a) and (b) reveal the ID dependency on silicon body thickness (tSi) of both SM and DM CGAA MOSFETs.	cache/fuelectenerg-869.pdf	txt/fuelectenerg-869.txt