id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-903	Mohapatra, Sushanta K; Pradhan, Kumar P.; Sahu, Prasanna K.	ZTC BIAS POINT OF ADVANCED FIN BASED DEVICE: THE IMPORTANCE AND EXPLORATION	2015	13	.pdf	application/pdf	5899	376	64	The unwanted flow of high leakage current through the well junction and the presence of latch up puts a limit on the use of bulk CMOS devices at high temperatures. Again the degradation in Ioff at high temperatures is due to the lattice vibration and the phonon scattering phenomena play a significant role as T increases.	cache/fuelectenerg-903.pdf	txt/fuelectenerg-903.txt