id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-926	Lerner, Ralf; Schottmann, Klaus; Hering, Siegfried; Käberlein, Andreas; Fritzsch, Matthias; Schneider, Klaus; Beyer, Daniel; Heinz, Steffen	COMPARISON OF DIFFERENT DEVICE CONCEPTS TO INCREASE THE OPERATING VOLTAGE OF A TRENCH ISOLATED SOI TECHNOLOGY TO ABOVE 900V	2015	12	.pdf	application/pdf	4797	207	56	These capacitors are much smaller than high voltage transistors and can be fabricated in the metal interconnect system of high voltage CMOS technologies with appropriate thickness of Inter Metal Dielectrics, IMD. Highest breakdown voltages have been measured at the simulated deep pwell and close to the simulated ndrift doping conditions.	cache/fuelectenerg-926.pdf	txt/fuelectenerg-926.txt
