id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
fuelectenerg-938	Rahimo, Munaf; Storasta, Liutauras	OPTIMIZATION AND ADVANTAGES OF THE BIMODE INSULATED GATE TRANSISTOR	2015	9	.pdf	application/pdf	3466	194	62	IGBT mode versus diode mode losses For the BIGT losses optimization, the main challenge was to enable low diode mode recovery losses while not having a considerable effect on the transistor mode on-state losses. The Bi-mode Insulated Gate Transistor BIGT is a single chip reverse conducting IGBT concept, which is foreseen to replace the standard IGBT / Diode two chip approach in many high power semiconductor applications.	cache/fuelectenerg-938.pdf	txt/fuelectenerg-938.txt