13015 FACTA UNIVERSITATIS Series: Electronics and Energetics Vol. 38, No 2, June 2025, pp. 263 - 275 https://doi.org/10.2298/FUEE2502263H © 2025 by University of Niš, Serbia | Creative Commons License: CC BY-NC-ND Original scientific paper DESIGN AND SIMULATION OF AN EFFICIENT SOLAR CELL WITH SB2SE3 AND CDTE AS DOUBLE ABSORBER LAYERS Atefeh Halashi1, Ali Naderi2 1Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran 2Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University, Qazvin, Iran ORCID iDs: Atefeh Halashi N/A Ali Naderi https://orcid.org/0000-0001-9891-9805 Abstract. The present study proposes a solar cell using double absorber layers of Sb2Se3 and CdTe. The design aim is to obtain high efficiency while maintaining or improving other main characteristics of solar cell. The proposed Sb2Se3/CdTe/CdS/ZnO/SnO2 solar cell include additional Sb2Se3 layer compared with its conventional counterpart while their total thickness is equal. The SCAPS simulator software has been applied to investigate the device performance. Firstly, the impacts of applying two absorber layers on the cell's performance and their thickness ratio were studied. Then, the effect of limitations such as band gap energy and the impurity concentration of the Sb2Se3 layer, the work function of the back contact metal, and the operating temperature on the cell performance were investigated. For thickness of 1.3 µm of Sb2Se3 layer and 0.7 µm of CdTe layer, the efficiency of 32.40% was obtained. The short circuit current density is JSC=34.55 mA/cm2, the open circuit voltage Voc = 1.06 V, and the Fill Factor is FF = 86.06%. The obtained efficiency is about 5% higher than the structure where only the layer of CdTe is applied as the absorber. Also, the use of Te which is a limited supply material in environment is reduced in proposed structure. Simulation results demonstrate that a solar cell with higher efficiency and more compatible with environment can be achieved using the proposed two absorber layer. Key words: solar cell, double absorber layers, Sb2Se3 layer, efficiency, fill factor 1. INTRODUCTION In the last few decades, the research community witnessed the noteworthy advancement in the field of solar photovoltaic technology (PV). Many groups of solar cells including copper indium gallium selenide (CIGS), perovskite cells, cadmium telluride (CdTe), silicon, and cells based on semiconductor compound III and V have been considered to make more Received September 17, 2024; revised November 10, 2024; accepted November 15, 2024 Corresponding author: Ali Naderi Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University, Qazvin, Iran. E-mail: a.naderi@eng.ikiu.ac.ir https://orcid.org/0000-0001-9891-9805 264 A. HALASHI, A. NADERI competent cells. The thin film CdTe and CIGS based cells as 2nd generation of solar cells present a proper coefficient of absorption in the visible range of spectrum. Sb2Se3 (antimony selenide) is also an appropriate absorber material in photovoltaic applications. Its band gap is direct in the variety of 1.2-1.9 and 1-1/5 eV, related to the deposition methods and operating circumstances. However, there are few reports on applying Sb2Se3 as the BSF (Back Surface Field) layer, in case of heavy doping of 1020 cm-3 [1]. Silicon-based solar cells are efficient cells whose manufacturing techniques are complex and expensive. Reasonable cost third-generation thin-layer solar cells have been evaluated as a potential substitute to monocrystalline silicon (Si) counterparts. The thin layer cells based on a-Si (amorphous silicon), CIGS, and CdTe, have been studied as fruitful structures. The CdTe technology is cheaper than others, 30 percent and 40 percent cheaper than CIGS and a-Si technology, respectively. Thus, the CdTe based cells show higher ratio of efficiency/cost. The polymer and perovskite-based cells have attracted the attention of researcher in recent years. The problem is that these solar cells are unstable, which limits their long-term applications [2]. On the other hand, it is not yet considered for large-scale application because compounds such as lead (Pb) are harmful to human health and biological life. Thin-layer photovoltaics have received more attention. It is due to the use of fewer materials, processing methods with low-temperature, variability of deposition procedures, well-matched with low- cost platforms, and low manufacturing expenses. Thin layer cells based on copper indium di- selenide, CdTe, and CIGS have now reached the commercialization step. But, factors such as the limited supply of Te and In due to scarcity, the Cd toxicity, and expensive price of Ga have made worries about the restrictions in PV manufacturing volume. Additional absorber substances in thin film cells have been considered, such as SnS (tin sulphide), FeS2 (iron sulfide), Cu2O (copper oxide), Cu2S (copper sulfide). However, the conversion efficiency obtained from these materials is still much lower than expected. Among all adsorbents, Sb2Se3 is a single-phase, stable, and binary chalcogenide compound [3,4]. CdTe thin-film structures have proven to be competent and gainful in generating solar electricity. They are competitor for CIGS and SI wafers in the commercial photovoltaic market. Significant study consideration has been dedicated to growing the conversion efficiency of these cells, so that has touched 22%. The CdTe efficiency does not depreciate at high temperatures due to its proper stability both chemically and thermally. On the other hand, CdTe has high chemical and thermal stability, which is caused by the large binding energy between Te and Cd (5.75ev). This is far larger than any energy of photons in the solar spectrum. Consequently, cell destruction and the existence of toxic cadmium is not a severe problem in environmental claims. A method to reduce the contest of Te deficiency is to decrease the CdTe thickness, where the normal CdTe thickness is presently about 5 µm. By reducing the thickness, not having significantly reduction in its proficiency, the amount of materials and its cost will also be reduced [5]. In this work, the thickness of the CdTe is considered to be very thin, which leads to less consumption of Te, and because of the less use of toxic Cd, it is better compatible with the environment. To compensate for the decrease in solar cell efficiency caused by the decrease in the thickness of absorber, another material has been used as the second absorber layer. CdTe is one of group II and VI combined polycrystalline semiconductors, with about 1.5eV direct band gap beside considerable absorption coefficient (1×105 cm-1). In recent years, the application of CdTe in the field of thin film solar cells with high efficiency has been significantly developed. Related to long-standing stability, inexpensive Design and simulation of an efficient solar cell with Sb2Se3 and CdTe as... 265 manufacturing of solar cells, and capability of absorbing wavelengths between 350 and 850nm, their production seems promising [6]. Researchers have formerly confirmed efficiency of 18.7% in polycrystalline thin-film CdTe cells. It achieved by means of higher deposition temperatures, back-contact Te layers, and anti-reflective coating [7]. The recombination at the back contact interface can be reduced by using a back contact field layer in CdTe cells, leading to improved open circuit voltage (Voc). By using a NiO layer in the back contact, Di Xiao and colleagues succeeded in making a CdTe-based structure with 12.17% efficiency and Voc of 790mV [8]. Moreover, in 2021, Rahmand and colleagues planned a CdTe-based solar cell in which antimony sulfide was used for the first time as the HTL (hole transport layer) at the back surface field [9]. They reached an efficiency of 28.41%. The Sb2Se3 with hole mobility up to 42 cm2v-1s-1, as a semiconductor is p-type with an orthogonal crystal structure. Its absorption coefficient is high. In addition, Se and Sb are relatively abundant, inexpensive, and less toxic. In 2018, researchers used vapor transfer deposition (VTD) method to Sb2Se3 film deposition laterally in the orientation of 221 type to increase the efficiency equal to 7.6%. Li and colleagues, in 2019 also employed the close- spacing sublimation method to effectively raise Sb2Se3 nanorod arrays with 001orientation on a Mo electrode [10]. They obtained the maximum yield about 9.2% to date. The Voc and short circuit current density (Jsc) of Sb2Se3 solar cells are far from ideal, in spite of such quick advance. To extra progress in the performance of the device, many limitations require to be examined, which leads to a huge burden on experimental study [10]. This study has theoretically investigated the effect of applying two absorber layers of Sb2Se3 and CdTe, as well as the role of changed limitations on solar cell outputs. To evaluate the output of the proposed cell, SCAPS simulator has been used. SCAPS is able to obtain the outputs of the related semiconductor equations; Poisson and carriers continuity equations. SCAPS calculates the answer of the straightforward semiconductor equations in one-dimensional and stable circumstances [11]. Fig. 1 Representation the construction of (a) the basic and (b) the proposed Sb2Se3 / CdTe solar cells 2. SIMULATION OF PROJECTED SOLAR CELL 2.1. Cell Construction Figure (1) presents the schematic construction of a CdTe-based and the proposed cell with two absorber layers. Sb2Se3 and CdTe are the absorber layers. The thickness of absorber layer is more than the other layers, so it allows more sunlight to be absorbed in 266 A. HALASHI, A. NADERI this layer [12]. CdS, which has a high absorption coefficient, appropriate ohmic contact, and low resistance, has been used in the buffer layer. SnO2 is chosen as TCO (transparent conductive oxide) and ZnO as high resistivity transparent (HRT) layer. Also, platinum is applied as the back contact metal. It should be mentioned that the thickness for Sb2Se3 and CdTe of proposed cell mentioned in figure is selected such that the cell characteristics obtain the proper values where it will be discussed in other sections. Table 1 Input parameters of SCAPS 1-D to simulate the device performance Sb2Se3 CdTe CdS Zno SnO2 Parameters 3.9 3.9 4.0 4.0 4.0 Electron affinity (eV) 15 320 100 25 100 Mobility of Electron (cm2/VS) 5.1 40 25 25 25 Mobility of hole (cm2/VS) 1 107 1 107 1 107 1 107 1 107 Electron thermal velocity (cm/s) 1.3 0.7 0.06 0.05 0.05 Thickness (µm) 1.8 1019 1.8 1019 1.8 1019 2.4 1018 1.8 1019 VB effective density of states (cm-3) 2.2 1018 8 1017 2.2 1018 1.8 1019 2.2 1018 CB effective density of states (cm-3) 1 107 1 107 1 107 1 107 1 107 Hole thermal velocity (cm/s) 1 1018 1 1014 0 0 0 Acceptor density NA (cm-3) 0 0 1 1018 1 1019 1 1017 Donor density (cm-3) 1.33 1.5 2.4 3.37 3.6 Bandgap (ev) 18 9.4 10 9 9 Dielectric Permittivity Neutral Donor Neutral - Donor Defect type 1 1012 1 1013 1 1014 - 1 1015 Nt total (cm-1) 0.6 0.75 0.6 - 1.8 Energy level related to a reference (eV) Single Gaussian Single - Gaussian Energetic Distribution Above EV midgap Above EV - midgap Reference for defect energy level Et 10-15 10-15 10-15 - 10-15 Holes capture Cross-Section (cm2) 10-15 10-12 10-15 - 10-12 Electron capture Cross-Section (cm2) 2.2. Parameters of Simulation The characteristics of the proposed Sb2Se3/CdTe/CdS/ZnO/SnO2 cell have been extracted from the [13, 14, 15, 16] references, and they are outlined in Table (1). The defect energy distribution of CdTe and SnO2 is Gaussian with a characteristic energy of 0.1eV [13]. Also, the defect of the interface is also collected from reference [1] and summarized in table (2). Table 2 Interface defect characteristics Parameter CdS/CdTe interface Sb2Se3 CdTe interf Defect type Neutral Neural Total density (cm-2) 1.0 1014 1.0 1014 The energy related to Reference (eV) 0.25 0.25 Reference for defect energy level Et Above highest Ev Above highest Ev Holes/Electrons capture cross section (cm2) 1 10-19 1 10-19 Design and simulation of an efficient solar cell with Sb2Se3 and CdTe as... 267 3. DISCUSSION AND RESULTS The current work aimed to design a solar cell with high efficiency and simultaneously more compatibility with the environment. Here, a 2 µm thickness CdTe-based solar cell was first simulated as the only absorber layer. Then, the CdTe thickness has been decreased. It is more economical since it applies less Te that is less abundant, and more compatible with the environment due to the less usage of the toxic Cd. However, by reducing the thickness of the CdTe layer, the efficiency experiences a reduction, as depicted in Figure 2. It should be mentioned that between 1 µm and 2 µm, the efficiency experiences small changes (about 1%). Here the thickness of basic structure is selected to be 2 µm but one can choose a thickness between 1 µm and 2 µm without losing considerable efficiency. In Figure 2, the solar cell includes only one absorber layer. In next simulations, the second absorber layer is inserted but the total thickness of absorber layers (CdTe/Sb2Se3) is 2µm. To evaluate the effect of using two absorber layers, firstly, the total 2µm thickness is devoted to Cd and then the effects of reducing the CdTe thickness and increasing Sb2Se3 have been investigated. Fig. 2 Influence of reducing the CdTe absorber thickness on efficiency Fig. 3 The consequence of reducing the CdTe layer thickness and using two absorber layers on the QE of the structure. By increasing the Sb2Se3 thickness, the QE increases 268 A. HALASHI, A. NADERI Figure 3, presents the cell quantum efficiency (QE). The decrease in efficiency is due to the decrease in QE for the wavelengths greater than 500 nm. For one absorber layer the QE is zero for wavelength greater than 850 nm. By adding second absorber layer, which is placed at the front of the cell, the decrease in solar cell efficiency is compensated. Sb2Se3 has well abundance and less toxicity, and depending on the deposition methods, can have a direct band gap in the variety of 1-1.5 eV, and considering that its energy is less than CdTe in this range, this material is chosen to be the second absorber layer. The effect of its application on quantum efficiency is revealed in Figure 3. As it is given in the figure, if CdTe is used as the only absorber layer, the quantum efficiency will be zero for the photons with a wavelength longer than 850nm. By applying Sb2Se3 as the second absorber layer, the cell would be able to absorb photons with longer than 850nm wavelength, and due to absorbing more photons, the cell's efficiency improves. It was observed from Figure 3 that by applying two absorber layers with different band gap energy, the cell absorbs more extensive solar energy, which increases the cell's efficiency. In subsequent, the effects of thickness ratio of the absorber layers, the Sb2Se3 band gap energy, temperature, etc., on the characteristics of the structure including Voc, Jsc, FF, and efficiency (η) are examined. The efficiency and FF of the solar cell can be calculated by means of the bellow relations [17], where Pin is input power, Vm and Im are maximum values of voltage and current, respectively. 2 . . , ( 1000 )SC OC in in I V FF w P P m  = = (1) m m SC OC I V FF I V  =  (2) 3.1. Examination of the Thickness Ratio of the Sb2Se3 and CdTe and the Effect of Using Two Different Absorber Layers The absorber thickness is a significant restriction that affects the capabilities of the solar cell. A thick layer permits further photons to be absorbed, thus producing further electron-hole pairs and improving proficiency. Because of weak optical absorption, a thin absorber layer reduces the optical current, thus the efficiency. In another word, if the absorber layer is too thick, it will lead to a longer transmission path of the optically produced carriers; thus, the recombination increases. Also, there is an optimal thickness for the absorber layer beyond which the output parameters do not improve significantly. In this work, the thickness ratio of the two absorber layers has been changed. Table 3 displays the thickness ratio of the two absorbers, and Figure 4 presents the output characteristics of the solar cell concerning these thicknesses. Table 3 Several thickness ratio of CdTe and Sb2Se3 absorber layers A7 A6 A5 A4 A3 A2 A1 Structure 1/1.9 0.5/1.5 0.7/1.3 1/ 1.3/0.7 1.7/0.3 2/0 CdTe/Sb2Se3 Thickness (µm) As seen in Figure 4, η, JSC, and FF are greater when the absorber layer is composed of two different types of material than the state where it is only constituted of one type of material. Therefore, the efficiency can be improved by applying double absorber layers, Design and simulation of an efficient solar cell with Sb2Se3 and CdTe as... 269 which is due to the absorption of a wider range of solar energy. Consequently, FF will also be improved according to the relation (2). According to Figure 4, the utmost Voc corresponds to (A1) that only the CdTe absorber layer has been used, and it caused by the decrease in the back surface field recombination. Yet, the short circuit current in this state is less than in the other states. In the case of the thickness ratio of 0.7/1.3 of the CdTe/Sb2Se3 absorber, the efficiency of the solar cell has amplified by 5% related to the first state where only one layer with the thickness equal to 2 µm was applied as the absorber. Considering that the reduction of the thickness of cadmium telluride leads to an increase in its deficiency, and on the other hand, according to Figure 4, the variations in the efficiency is less for the thicknesses less than 0.7 µm, this ratio of thickness has been considered for the absorber layer. Afterward, for this thickness ratio of the absorber layers, the influence of other parameters on the cell's capability was surveyed. Fig. 4 Influence of absorber layers thicknesses on the characteristics of the solar cell 3.2. Effect of Band Gap Energy of Sb2Se3 Layer Depending on the deposition methods, Sb2Se3 has a direct band gap among 1-1.5 and 1.2-1.9 electron volts. Figure (5) shows the effect of band gap energy in this range. As the band gap energy of Sb2Se3 increased, the short-circuit current decreased, as a result of the decrease in photon absorption at longer wavelengths Eg ˃ Eph. The Voc is also first enlarged and then fixed. By change in bandgap, the variation in VOC is in inverse direction of ISC. The VOC increases with bandgap. But for bandgaps larger than 0.4 eV, 270 A. HALASHI, A. NADERI due to the increase in recombination, its increase is stopped and approximately is fixed. As the energy gap increases, FF and output efficiency firstly increase and then decrease. Maximum efficiency is achieved in Eg=1.33ev (32.40%). In fact, the combined effects have led to an increase in Pm in Eg=1.33 ev, where the increase in Voc has covered the decrease in JSC . 3.3. The Effect of Sb2Se3 Impurity Concentration (NA) NA plays an important role on cell efficiency. In Figure 6, NA changes in the range of 1013-1018 cm-3. It can be seen that the increase of NA has led to the improvement of FF and thus the efficiency. The higher efficiency is obtained at higher Sb2Se3 concentration. Minority carriers life time is proportional to the added impurity. The higher NA, the longer life time, which means collecting more photons at absorber layer and increase in efficiency and FF. Fig. 5 The influence of band gap energy on , , FF and ɳ 3.4. The Temperature Effects The temperature affects the band gap of semiconductors. The band gap energy of a semiconductor decreases with growing the temperature. For temperatures more than 300K, the band gap changes can be studied according to the following equation: Design and simulation of an efficient solar cell with Sb2Se3 and CdTe as... 271 2 ( ) (0)g g T E T E T   = − + (3) in which temperature is T, Eg(T) is the semiconductor band gap, and Eg(0) is its value in T=0K, α and β are the connection parameters [18]. Figure 7 shows influence of increasing temperature on cell performance which are the direct results of reduced bandgap energy by temperature. Due to the importance of temperature effects on cell performance, its dependency is investigated in Figure 7. By increase in temperature, the velocity of carriers increases. It means higher recombination rate and reduced efficiency. Fig. 6 impurity concentration effects on output parameters of the cell 3.5. Effect of Metal Work Function of Back Contact Choosing the proper metal is essential to achieve maximum efficiency. Figure 8 shows the effect of the work function of the metal on the output characteristics of the structure. In this study, different materials such as Pt, Au, Ni, Mo, Ag, Zn, Cu, and Al have been used. As can be seen, with the growth in the metal work function, the efficiency rises, which indicates the decrease in the height of the barrier with the growth in the work function of the metal. The efficiency for work function more than 5.65ev is fixed. 272 A. HALASHI, A. NADERI Fig. 7 Characteristics of the Sb2Se3/CdTe solar cell versus the operating temperature Fig. 8 Result of metal work function change on , FF, , and ɳ Design and simulation of an efficient solar cell with Sb2Se3 and CdTe as... 273 3.6. Energy Band Diagram, QE and Current-Voltage Curve Figure 9a illustrates energy band diagram of SnO2:F/ZnO/CdS/CdTe/Sb2Se3/Pt structure, and 9b and 9c show QE and (J-V) curves for different band gap energy values of Sb2Se3 in this cell. The performance characteristics are compared with the experimentally and numerically characteristics in the other works for the CdTe based solar cells as presented in Table 4. Based on Table 4, compared to other structures, the proposed structure includes less use of a limited source material (Te). Also, its VOC, ISC, FF, and efficiency show that by using two absorber layers, an efficient and more compatible with environment solar cell can be achieved. Fig. 9 (a) Energy band diagram of SnO2:F/ZnO/CdS/CdTe/Sb2Se3/Pt structure. (b) and (c) QE and J-V curves for different band gap energy values of Sb2Se3 Table 4 Device characteristics of the proposed structure in comparison with the reported Cd cells. 274 A. HALASHI, A. NADERI Structure Experime- ntal/ Sim ulation Thickness of Absorber layer (μm) Voc (V) Jsc (mA/cm2) FF (%) ɳ (%) Ref. FTO/Cds/CdTe/BCS/ITO Exp 3 0.823 21.2 70.4 12.3 [19] Sno2:F/Cds//CdTe/Cd1-xMgxTe/Cu/Te /Au Exp 3 1.01446 24.32 75.96 17.53 [13] Sno2:F/MZO/Cds:o/CdTe/Mo/Al/Cr Exp 3-5 0.8625 26.8 78.2 18.05 [20] Sno2 /CdSe/CdTe/Al Sim 4 0.870 24.32 76.19 16.13 [21] Au/ZnTe:Cu/CdTe/Cd1-xZnxS/ITO Sim 2.5 1.1 27.18 66.65 19.93 [22] ZnTe/Zns/CdTe/Si Sim 2.5 1.01 29.32 72.06 21.38 [23] ITO/Tio2/Cds/CdTe/Mos2/Au Sim 3 1.141 27.69 83.80 26.49 [24] Tio2/Cds/CdTe/Cuo/Pt Sim 3 1.107 28.48 89.10 28.11 [25] CdTe/CISSE/Si/CdS/Zno Sim 3 0.8136 41.1436 79.36 27.38 [26] CuSCN/CdTe/CdS/ZnO:Al Sim 4 1.03 27.4 80.17 22.62 [27] FTO/MZO/CdTe/Te:Cu Sim 2.5 0.92 26.15 87.03 21.04 [28] SnO2:F/ZnO/CdS/CdTe/ Sb2Se3/Pt Sim 2 1.06 34.55 86.06 32.40 This work 4. CONCLUSION In this work, a solar cell based on CdTe has been designed and simulated. Firstly, the absorber layer thickness has been decreased, which led to a decrease in the cell efficiency. 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