id	sid	tid	token	lemma	pos
fens-350	1	1	food	food	NOUN
fens-350	1	2	and	and	CCONJ
fens-350	1	3	environment	environment	NOUN
fens-350	1	4	safety	safety	NOUN
fens-350	1	5	journal	journal	NOUN
fens-350	1	6	of	of	ADP
fens-350	1	7	faculty	faculty	NOUN
fens-350	1	8	of	of	ADP
fens-350	1	9	food	food	NOUN
fens-350	1	10	engineering	engineering	NOUN
fens-350	1	11	,	,	PUNCT
fens-350	1	12	tefan	tefan	PROPN
fens-350	1	13	cel	cel	PROPN
fens-350	1	14	mare	mare	PROPN
fens-350	1	15	university	university	PROPN
fens-350	1	16	suceava	suceava	PROPN
fens-350	1	17	volume	volume	PROPN
fens-350	1	18	x	x	NOUN
fens-350	1	19	,	,	PUNCT
fens-350	1	20	issue	issue	VERB
fens-350	1	21	3	3	NUM
fens-350	1	22	2011	2011	NUM
fens-350	1	23	84	84	NUM
fens-350	1	24	the	the	DET
fens-350	1	25	pec	pec	NOUN
fens-350	1	26	as	as	ADP
fens-350	1	27	an	an	DET
fens-350	1	28	easy	easy	ADJ
fens-350	1	29	-	-	PUNCT
fens-350	1	30	to	to	PART
fens-350	1	31	-	-	PUNCT
fens-350	1	32	prepare	prepare	VERB
fens-350	1	33	and	and	CCONJ
fens-350	1	34	cheaper	cheap	ADJ
fens-350	1	35	alternative	alternative	ADJ
fens-350	1	36	power	power	NOUN
fens-350	1	37	source	source	NOUN
fens-350	1	38	g.sh	g.sh	PROPN
fens-350	1	39	.	.	PUNCT
fens-350	2	1	hovsepyan1	hovsepyan1	ADJ
fens-350	2	2	,	,	PUNCT
fens-350	2	3	a.n.kocharyan2	a.n.kocharyan2	NOUN
fens-350	2	4	,	,	PUNCT
fens-350	2	5	s.h.martirosyan2	s.h.martirosyan2	NOUN
fens-350	2	6	,	,	PUNCT
fens-350	2	7	g.o.torosyan2	g.o.torosyan2	PROPN
fens-350	2	8	1institute	1institute	NUM
fens-350	2	9	of	of	ADP
fens-350	2	10	general	general	ADJ
fens-350	2	11	and	and	CCONJ
fens-350	2	12	inorganic	inorganic	ADJ
fens-350	2	13	chemistry	chemistry	NOUN
fens-350	2	14	of	of	ADP
fens-350	2	15	nas	nas	PROPN
fens-350	2	16	of	of	ADP
fens-350	2	17	ra	ra	PROPN
fens-350	2	18	,	,	PUNCT
fens-350	2	19	10	10	NUM
fens-350	2	20	arghutian	arghutian	ADJ
fens-350	2	21	street	street	NOUN
fens-350	2	22	,	,	PUNCT
fens-350	2	23	10	10	NUM
fens-350	2	24	tel	tel	NOUN
fens-350	2	25	.	.	PROPN
fens-350	3	1	564029	564029	NUM
fens-350	3	2	,	,	PUNCT
fens-350	3	3	gohar2007@mail.ru	gohar2007@mail.ru	PROPN
fens-350	3	4	2state	2state	NUM
fens-350	3	5	engineering	engineering	NOUN
fens-350	3	6	university	university	PROPN
fens-350	3	7	of	of	ADP
fens-350	3	8	armenia	armenia	PROPN
fens-350	3	9	,	,	PUNCT
fens-350	3	10	terian	terian	NOUN
fens-350	3	11	105	105	NUM
fens-350	3	12	abstract	abstract	ADJ
fens-350	3	13	:	:	PUNCT
fens-350	3	14	porous	porous	ADJ
fens-350	3	15	cdse	cdse	NOUN
fens-350	3	16	photoelectrochemical	photoelectrochemical	ADJ
fens-350	3	17	converter	converter	NOUN
fens-350	3	18	is	be	AUX
fens-350	3	19	fabricated	fabricate	VERB
fens-350	3	20	and	and	CCONJ
fens-350	3	21	tested	test	VERB
fens-350	3	22	using	use	VERB
fens-350	3	23	highly	highly	ADV
fens-350	3	24	porous	porous	ADJ
fens-350	3	25	substrate	substrate	NOUN
fens-350	3	26	of	of	ADP
fens-350	3	27	metallic	metallic	ADJ
fens-350	3	28	cd	cd	PROPN
fens-350	3	29	.	.	PUNCT
fens-350	4	1	following	follow	VERB
fens-350	4	2	mean	mean	PROPN
fens-350	4	3	pec	pec	PROPN
fens-350	4	4	characteristics	characteristic	NOUN
fens-350	4	5	obtained	obtain	VERB
fens-350	4	6	:	:	PUNCT
fens-350	4	7	efficiency	efficiency	NOUN
fens-350	4	8	:	:	PUNCT
fens-350	4	9	5	5	NUM
fens-350	4	10	%	%	NOUN
fens-350	4	11	.	.	PUNCT
fens-350	5	1	on	on	ADP
fens-350	5	2	the	the	DET
fens-350	5	3	other	other	ADJ
fens-350	5	4	hand	hand	NOUN
fens-350	5	5	,	,	PUNCT
fens-350	5	6	cdse	cdse	PROPN
fens-350	5	7	semiconductor	semiconductor	NOUN
fens-350	5	8	developed	develop	VERB
fens-350	5	9	on	on	ADP
fens-350	5	10	the	the	DET
fens-350	5	11	highly	highly	ADV
fens-350	5	12	porous	porous	ADJ
fens-350	5	13	(	(	PUNCT
fens-350	5	14	60	60	NUM
fens-350	5	15	%	%	NOUN
fens-350	5	16	)	)	PUNCT
fens-350	5	17	cadmium	cadmium	NOUN
fens-350	5	18	substrate	substrate	NOUN
fens-350	5	19	showed	show	VERB
fens-350	5	20	some	some	DET
fens-350	5	21	2	2	NUM
fens-350	5	22	%	%	NOUN
fens-350	5	23	of	of	ADP
fens-350	5	24	efficiency	efficiency	NOUN
fens-350	5	25	with	with	ADP
fens-350	5	26	high	high	ADJ
fens-350	5	27	dark	dark	ADJ
fens-350	5	28	current	current	ADJ
fens-350	5	29	value	value	NOUN
fens-350	5	30	only	only	ADV
fens-350	5	31	.	.	PUNCT
fens-350	6	1	it	it	PRON
fens-350	6	2	was	be	AUX
fens-350	6	3	shown	show	VERB
fens-350	6	4	that	that	SCONJ
fens-350	6	5	the	the	DET
fens-350	6	6	light	light	ADJ
fens-350	6	7	-	-	PUNCT
fens-350	6	8	sensitive	sensitive	ADJ
fens-350	6	9	phase	phase	NOUN
fens-350	6	10	is	be	AUX
fens-350	6	11	monoclinic	monoclinic	ADJ
fens-350	6	12	2	2	NUM
fens-350	6	13	corresponding	correspond	VERB
fens-350	6	14	to	to	ADP
fens-350	6	15	cd0.53se0.47	cd0.53se0.47	NOUN
fens-350	6	16	formula	formula	NOUN
fens-350	6	17	determined	determine	VERB
fens-350	6	18	by	by	ADP
fens-350	6	19	the	the	DET
fens-350	6	20	x	x	NOUN
fens-350	6	21	-	-	NOUN
fens-350	6	22	ray	ray	NOUN
fens-350	6	23	,	,	PUNCT
fens-350	6	24	sem	sem	NOUN
fens-350	6	25	and	and	CCONJ
fens-350	6	26	elementary	elementary	ADJ
fens-350	6	27	analysis	analysis	NOUN
fens-350	6	28	tool	tool	NOUN
fens-350	6	29	methods	method	NOUN
fens-350	6	30	.	.	PUNCT
fens-350	7	1	keywords	keyword	NOUN
fens-350	7	2	:	:	PUNCT
fens-350	7	3	cdse	cdse	PROPN
fens-350	7	4	pec	pec	PROPN
fens-350	7	5	,	,	PUNCT
fens-350	7	6	porous	porous	ADJ
fens-350	7	7	semiconductor	semiconductor	NOUN
fens-350	7	8	electrode	electrode	NOUN
fens-350	7	9	,	,	PUNCT
fens-350	7	10	semiconductor	semiconductor	NOUN
fens-350	7	11	film	film	NOUN
fens-350	7	12	1	1	NUM
fens-350	7	13	.	.	PUNCT
fens-350	7	14	introduction	introduction	NOUN
fens-350	7	15	coming	come	VERB
fens-350	7	16	from	from	ADP
fens-350	7	17	the	the	DET
fens-350	7	18	worldwide	worldwide	ADJ
fens-350	7	19	harsh	harsh	ADJ
fens-350	7	20	ecological	ecological	ADJ
fens-350	7	21	situation	situation	NOUN
fens-350	7	22	,	,	PUNCT
fens-350	7	23	nowadays	nowadays	ADV
fens-350	7	24	more	more	ADJ
fens-350	7	25	and	and	CCONJ
fens-350	7	26	more	more	ADJ
fens-350	7	27	attention	attention	NOUN
fens-350	7	28	induce	induce	VERB
fens-350	7	29	alternative	alternative	ADJ
fens-350	7	30	power	power	NOUN
fens-350	7	31	sources	source	NOUN
fens-350	7	32	,	,	PUNCT
fens-350	7	33	an	an	DET
fens-350	7	34	example	example	NOUN
fens-350	7	35	of	of	ADP
fens-350	7	36	which	which	PRON
fens-350	7	37	is	be	AUX
fens-350	7	38	the	the	DET
fens-350	7	39	photoelectrochemical	photoelectrochemical	ADJ
fens-350	7	40	converter	converter	NOUN
fens-350	7	41	(	(	PUNCT
fens-350	7	42	pec	pec	NOUN
fens-350	7	43	)	)	PUNCT
fens-350	7	44	.	.	PUNCT
fens-350	8	1	semiconductor	semiconductor	NOUN
fens-350	8	2	solar	solar	ADJ
fens-350	8	3	converters	converter	NOUN
fens-350	8	4	are	be	AUX
fens-350	8	5	widely	widely	ADV
fens-350	8	6	known	know	VERB
fens-350	8	7	power	power	NOUN
fens-350	8	8	sources	source	NOUN
fens-350	8	9	capable	capable	ADJ
fens-350	8	10	directly	directly	ADV
fens-350	8	11	to	to	PART
fens-350	8	12	convert	convert	VERB
fens-350	8	13	light	light	ADJ
fens-350	8	14	energy	energy	NOUN
fens-350	8	15	into	into	ADP
fens-350	8	16	electrical	electrical	ADJ
fens-350	8	17	one	one	NUM
fens-350	8	18	.	.	PUNCT
fens-350	9	1	the	the	DET
fens-350	9	2	unique	unique	ADJ
fens-350	9	3	properties	property	NOUN
fens-350	9	4	of	of	ADP
fens-350	9	5	cadmiumchalcogenide	cadmiumchalcogenide	ADJ
fens-350	9	6	compounds	compound	NOUN
fens-350	9	7	(	(	PUNCT
fens-350	9	8	cds	cd	NOUN
fens-350	9	9	;	;	PUNCT
fens-350	9	10	cdse	cdse	NOUN
fens-350	9	11	;	;	PUNCT
fens-350	9	12	cdte	cdte	NOUN
fens-350	9	13	and	and	CCONJ
fens-350	9	14	their	their	PRON
fens-350	9	15	mixed	mixed	ADJ
fens-350	9	16	alloys	alloy	NOUN
fens-350	9	17	)	)	PUNCT
fens-350	9	18	,	,	PUNCT
fens-350	9	19	such	such	ADJ
fens-350	9	20	as	as	ADP
fens-350	9	21	direct	direct	ADJ
fens-350	9	22	transition	transition	NOUN
fens-350	9	23	,	,	PUNCT
fens-350	9	24	optimal	optimal	ADJ
fens-350	9	25	bandgap	bandgap	NOUN
fens-350	9	26	width	width	NOUN
fens-350	9	27	(	(	PUNCT
fens-350	9	28	1.35	1.35	NUM
fens-350	9	29	-	-	SYM
fens-350	9	30	1.85	1.85	NUM
fens-350	9	31	ev	ev	NOUN
fens-350	9	32	)	)	PUNCT
fens-350	9	33	etc	etc	X
fens-350	9	34	.	.	X
fens-350	9	35	,	,	PUNCT
fens-350	9	36	attracted	attract	VERB
fens-350	9	37	immense	immense	ADJ
fens-350	9	38	interest	interest	NOUN
fens-350	9	39	for	for	ADP
fens-350	9	40	the	the	DET
fens-350	9	41	use	use	NOUN
fens-350	9	42	in	in	ADP
fens-350	9	43	pec	pec	NOUN
fens-350	9	44	.	.	PUNCT
fens-350	10	1	on	on	ADP
fens-350	10	2	the	the	DET
fens-350	10	3	other	other	ADJ
fens-350	10	4	hand	hand	NOUN
fens-350	10	5	,	,	PUNCT
fens-350	10	6	electrochemically	electrochemically	ADV
fens-350	10	7	fabricated	fabricate	VERB
fens-350	10	8	semiconductor	semiconductor	NOUN
fens-350	10	9	films	film	NOUN
fens-350	10	10	are	be	AUX
fens-350	10	11	salient	salient	ADJ
fens-350	10	12	by	by	ADP
fens-350	10	13	their	their	PRON
fens-350	10	14	easeof	easeof	ADJ
fens-350	10	15	-	-	PUNCT
fens-350	10	16	technology	technology	NOUN
fens-350	10	17	and	and	CCONJ
fens-350	10	18	low	low	ADJ
fens-350	10	19	-	-	PUNCT
fens-350	10	20	cost	cost	NOUN
fens-350	10	21	virtues	virtue	NOUN
fens-350	10	22	.	.	PUNCT
fens-350	11	1	besides	besides	ADV
fens-350	11	2	,	,	PUNCT
fens-350	11	3	electrochemically	electrochemically	ADV
fens-350	11	4	fabricated	fabricate	VERB
fens-350	11	5	semi	semi	ADJ
fens-350	11	6	-	-	ADJ
fens-350	11	7	conductor	conductor	ADJ
fens-350	11	8	layers	layer	NOUN
fens-350	11	9	can	can	AUX
fens-350	11	10	be	be	AUX
fens-350	11	11	produced	produce	VERB
fens-350	11	12	with	with	ADP
fens-350	11	13	any	any	DET
fens-350	11	14	given	give	VERB
fens-350	11	15	surface	surface	NOUN
fens-350	11	16	area	area	NOUN
fens-350	11	17	and	and	CCONJ
fens-350	11	18	form	form	NOUN
fens-350	11	19	,	,	PUNCT
fens-350	11	20	as	as	SCONJ
fens-350	11	21	they	they	PRON
fens-350	11	22	are	be	AUX
fens-350	11	23	polymorphic	polymorphic	ADJ
fens-350	11	24	and	and	CCONJ
fens-350	11	25	usable	usable	ADJ
fens-350	11	26	in	in	ADP
fens-350	11	27	pecs	pec	NOUN
fens-350	11	28	.	.	PUNCT
fens-350	12	1	conventionally	conventionally	ADV
fens-350	12	2	,	,	PUNCT
fens-350	12	3	cdse	cdse	PROPN
fens-350	12	4	semiconductor	semiconductor	NOUN
fens-350	12	5	films	film	NOUN
fens-350	12	6	are	be	AUX
fens-350	12	7	obtained	obtain	VERB
fens-350	12	8	by	by	ADP
fens-350	12	9	the	the	DET
fens-350	12	10	potentiostatic	potentiostatic	ADJ
fens-350	12	11	tool	tool	NOUN
fens-350	12	12	method	method	NOUN
fens-350	12	13	,	,	PUNCT
fens-350	12	14	which	which	PRON
fens-350	12	15	has	have	VERB
fens-350	12	16	two	two	NUM
fens-350	12	17	inherent	inherent	ADJ
fens-350	12	18	drawbacks	drawback	NOUN
fens-350	12	19	:	:	PUNCT
fens-350	12	20	first	first	ADV
fens-350	12	21	,	,	PUNCT
fens-350	12	22	it	it	PRON
fens-350	12	23	is	be	AUX
fens-350	12	24	impossible	impossible	ADJ
fens-350	12	25	to	to	PART
fens-350	12	26	contain	contain	VERB
fens-350	12	27	the	the	DET
fens-350	12	28	layer	layer	NOUN
fens-350	12	29	thickness	thickness	NOUN
fens-350	12	30	as	as	SCONJ
fens-350	12	31	the	the	DET
fens-350	12	32	cadmium	cadmium	NOUN
fens-350	12	33	ions	ion	NOUN
fens-350	12	34	are	be	AUX
fens-350	12	35	co	co	VERB
fens-350	12	36	-	-	VERB
fens-350	12	37	deposited	deposit	VERB
fens-350	12	38	at	at	ADP
fens-350	12	39	diffusion	diffusion	NOUN
fens-350	12	40	limiting	limit	VERB
fens-350	12	41	current	current	ADJ
fens-350	12	42	density	density	NOUN
fens-350	12	43	values	value	NOUN
fens-350	12	44	;	;	PUNCT
fens-350	12	45	and	and	CCONJ
fens-350	12	46	secondly	secondly	ADV
fens-350	12	47	,	,	PUNCT
fens-350	12	48	the	the	DET
fens-350	12	49	devised	devise	VERB
fens-350	12	50	pec	pec	NOUN
fens-350	12	51	with	with	ADP
fens-350	12	52	cdse	cdse	NOUN
fens-350	12	53	semiconductor	semiconductor	NOUN
fens-350	12	54	exhibited	exhibit	VERB
fens-350	12	55	poor	poor	ADJ
fens-350	12	56	reproducibility	reproducibility	NOUN
fens-350	12	57	and	and	CCONJ
fens-350	12	58	below	below	ADP
fens-350	12	59	-	-	PUNCT
fens-350	12	60	par	par	NOUN
fens-350	12	61	light	light	ADJ
fens-350	12	62	conversion	conversion	NOUN
fens-350	12	63	efficiency	efficiency	NOUN
fens-350	12	64	.	.	PUNCT
fens-350	13	1	it	it	PRON
fens-350	13	2	was	be	AUX
fens-350	13	3	possible	possible	ADJ
fens-350	13	4	to	to	PART
fens-350	13	5	produce	produce	VERB
fens-350	13	6	cdse	cdse	NOUN
fens-350	13	7	semiconductor	semiconductor	NOUN
fens-350	13	8	light	light	ADJ
fens-350	13	9	-	-	PUNCT
fens-350	13	10	sensitive	sensitive	ADJ
fens-350	13	11	electrodes	electrode	NOUN
fens-350	13	12	by	by	ADP
fens-350	13	13	the	the	DET
fens-350	13	14	precipitation	precipitation	NOUN
fens-350	13	15	of	of	ADP
fens-350	13	16	selenium	selenium	NOUN
fens-350	13	17	on	on	ADP
fens-350	13	18	the	the	DET
fens-350	13	19	predeveloped	predevelope	VERB
fens-350	13	20	porous	porous	ADJ
fens-350	13	21	cadmium	cadmium	NOUN
fens-350	13	22	carrier	carrier	NOUN
fens-350	13	23	galvanostatically	galvanostatically	ADV
fens-350	13	24	[	[	X
fens-350	13	25	1	1	NUM
fens-350	13	26	]	]	PUNCT
fens-350	13	27	.	.	PUNCT
fens-350	14	1	on	on	ADP
fens-350	14	2	the	the	DET
fens-350	14	3	other	other	ADJ
fens-350	14	4	hand	hand	NOUN
fens-350	14	5	,	,	PUNCT
fens-350	14	6	substitution	substitution	NOUN
fens-350	14	7	of	of	ADP
fens-350	14	8	ti	ti	NOUN
fens-350	14	9	-	-	NOUN
fens-350	14	10	metal	metal	ADJ
fens-350	14	11	or	or	CCONJ
fens-350	14	12	ni	ni	NOUN
fens-350	14	13	-	-	PUNCT
fens-350	14	14	metal	metal	NOUN
fens-350	14	15	used	use	VERB
fens-350	14	16	as	as	ADP
fens-350	14	17	conventional	conventional	ADJ
fens-350	14	18	substrates	substrate	NOUN
fens-350	14	19	with	with	ADP
fens-350	14	20	cd	cd	NOUN
fens-350	14	21	-	-	PUNCT
fens-350	14	22	metal	metal	NOUN
fens-350	14	23	improves	improve	VERB
fens-350	14	24	both	both	CCONJ
fens-350	14	25	the	the	DET
fens-350	14	26	cdse	cdse	NOUN
fens-350	14	27	pec	pec	VERB
fens-350	14	28	output	output	NOUN
fens-350	14	29	characteristics	characteristic	NOUN
fens-350	14	30	(	(	PUNCT
fens-350	14	31	over	over	ADP
fens-350	14	32	4.5	4.5	NUM
fens-350	14	33	%	%	NOUN
fens-350	14	34	with	with	ADP
fens-350	14	35	practically	practically	ADV
fens-350	14	36	no	no	PRON
fens-350	14	37	dark	dark	ADJ
fens-350	14	38	current	current	NOUN
fens-350	14	39	)	)	PUNCT
fens-350	14	40	and	and	CCONJ
fens-350	14	41	the	the	DET
fens-350	14	42	reproducibility	reproducibility	NOUN
fens-350	14	43	as	as	ADV
fens-350	14	44	well	well	ADV
fens-350	14	45	,	,	PUNCT
fens-350	14	46	as	as	SCONJ
fens-350	14	47	it	it	PRON
fens-350	14	48	was	be	AUX
fens-350	14	49	shown	show	VERB
fens-350	14	50	in	in	ADP
fens-350	14	51	[	[	X
fens-350	14	52	2	2	NUM
fens-350	14	53	]	]	PUNCT
fens-350	14	54	.	.	PUNCT
fens-350	15	1	developed	develop	VERB
fens-350	15	2	technology	technology	NOUN
fens-350	15	3	permits	permit	VERB
fens-350	15	4	to	to	PART
fens-350	15	5	obtain	obtain	VERB
fens-350	15	6	highly	highly	ADV
fens-350	15	7	porous	porous	ADJ
fens-350	15	8	semiconductor	semiconductor	NOUN
fens-350	15	9	electrode	electrode	NOUN
fens-350	15	10	predominantly	predominantly	ADV
fens-350	15	11	having	have	VERB
fens-350	15	12	open	open	ADJ
fens-350	15	13	pores	pore	NOUN
fens-350	15	14	.	.	PUNCT
fens-350	16	1	it	it	PRON
fens-350	16	2	is	be	AUX
fens-350	16	3	known	know	VERB
fens-350	16	4	that	that	SCONJ
fens-350	16	5	porosity	porosity	NOUN
fens-350	16	6	increases	increase	VERB
fens-350	16	7	pec	pec	NOUN
fens-350	16	8	efficiency	efficiency	NOUN
fens-350	16	9	and	and	CCONJ
fens-350	16	10	,	,	PUNCT
fens-350	16	11	at	at	ADP
fens-350	16	12	the	the	DET
fens-350	16	13	same	same	ADJ
fens-350	16	14	time	time	NOUN
fens-350	16	15	,	,	PUNCT
fens-350	16	16	permits	permit	VERB
fens-350	16	17	to	to	PART
fens-350	16	18	reduce	reduce	VERB
fens-350	16	19	pec	pec	NOUN
fens-350	16	20	cell	cell	NOUN
fens-350	16	21	power	power	NOUN
fens-350	16	22	losses	loss	NOUN
fens-350	16	23	incurred	incur	VERB
fens-350	16	24	within	within	ADP
fens-350	16	25	the	the	DET
fens-350	16	26	cell	cell	NOUN
fens-350	16	27	(	(	PUNCT
fens-350	16	28	re	re	VERB
fens-350	16	29	the	the	PRON
fens-350	16	30	[	[	X
fens-350	16	31	2	2	NUM
fens-350	16	32	]	]	NUM
fens-350	16	33	)	)	PUNCT
fens-350	16	34	.	.	PUNCT
fens-350	17	1	cd0.53se0.47	cd0.53se0.47	NOUN
fens-350	17	2	phase	phase	NOUN
fens-350	17	3	formation	formation	NOUN
fens-350	17	4	was	be	AUX
fens-350	17	5	confirmed	confirm	VERB
fens-350	17	6	by	by	ADP
fens-350	17	7	sem	sem	ADJ
fens-350	17	8	and	and	CCONJ
fens-350	17	9	elemental	elemental	ADJ
fens-350	17	10	analysis	analysis	NOUN
fens-350	17	11	methods	method	NOUN
fens-350	17	12	.	.	PUNCT
fens-350	18	1	2	2	X
fens-350	18	2	.	.	X
fens-350	18	3	experimental	experimental	ADJ
fens-350	18	4	electrochemical	electrochemical	ADJ
fens-350	18	5	workstation	workstation	NOUN
fens-350	18	6	600	600	NUM
fens-350	18	7	brand	brand	NOUN
fens-350	18	8	potentiostat	potentiostat	NOUN
fens-350	18	9	(	(	PUNCT
fens-350	18	10	ch	ch	NOUN
fens-350	18	11	instruments	instrument	NOUN
fens-350	18	12	,	,	PUNCT
fens-350	18	13	usa	usa	PROPN
fens-350	18	14	)	)	PUNCT
fens-350	18	15	has	have	AUX
fens-350	18	16	mailto:gohar2007:@mail.ru	mailto:gohar2007:@mail.ru	VERB
fens-350	18	17	food	food	NOUN
fens-350	18	18	and	and	CCONJ
fens-350	18	19	environment	environment	NOUN
fens-350	18	20	safety	safety	NOUN
fens-350	18	21	journal	journal	NOUN
fens-350	18	22	of	of	ADP
fens-350	18	23	faculty	faculty	NOUN
fens-350	18	24	of	of	ADP
fens-350	18	25	food	food	NOUN
fens-350	18	26	engineering	engineering	NOUN
fens-350	18	27	,	,	PUNCT
fens-350	18	28	tefan	tefan	PROPN
fens-350	18	29	cel	cel	PROPN
fens-350	18	30	mare	mare	PROPN
fens-350	18	31	university	university	PROPN
fens-350	18	32	suceava	suceava	PROPN
fens-350	18	33	volume	volume	PROPN
fens-350	18	34	x	x	NOUN
fens-350	18	35	,	,	PUNCT
fens-350	18	36	issue	issue	VERB
fens-350	18	37	3	3	NUM
fens-350	18	38	2011	2011	NUM
fens-350	18	39	85	85	NUM
fens-350	18	40	been	be	AUX
fens-350	18	41	used	use	VERB
fens-350	18	42	both	both	CCONJ
fens-350	18	43	for	for	ADP
fens-350	18	44	the	the	DET
fens-350	18	45	development	development	NOUN
fens-350	18	46	of	of	ADP
fens-350	18	47	cdse	cdse	NOUN
fens-350	18	48	films	film	NOUN
fens-350	18	49	and	and	CCONJ
fens-350	18	50	for	for	ADP
fens-350	18	51	cutting	cut	VERB
fens-350	18	52	the	the	DET
fens-350	18	53	main	main	ADJ
fens-350	18	54	photoelectrochemical	photoelectrochemical	ADJ
fens-350	18	55	parameters	parameter	NOUN
fens-350	18	56	.	.	PUNCT
fens-350	19	1	platinum	platinum	NOUN
fens-350	19	2	wires	wire	NOUN
fens-350	19	3	served	serve	VERB
fens-350	19	4	as	as	ADP
fens-350	19	5	reference	reference	NOUN
fens-350	19	6	and	and	CCONJ
fens-350	19	7	counter	counter	NOUN
fens-350	19	8	electrodes	electrode	NOUN
fens-350	19	9	.	.	PUNCT
fens-350	20	1	collimated	collimate	VERB
fens-350	20	2	100	100	NUM
fens-350	20	3	w	w	PROPN
fens-350	20	4	halogen	halogen	PROPN
fens-350	20	5	lamp	lamp	NOUN
fens-350	20	6	was	be	AUX
fens-350	20	7	the	the	DET
fens-350	20	8	source	source	NOUN
fens-350	20	9	of	of	ADP
fens-350	20	10	light	light	NOUN
fens-350	20	11	at	at	ADP
fens-350	20	12	65	65	NUM
fens-350	20	13	mw	mw	ADJ
fens-350	20	14	/	/	SYM
fens-350	20	15	cm2	cm2	NOUN
fens-350	20	16	intensity	intensity	NOUN
fens-350	20	17	.	.	PUNCT
fens-350	21	1	the	the	DET
fens-350	21	2	used	use	VERB
fens-350	21	3	technique	technique	NOUN
fens-350	21	4	is	be	AUX
fens-350	21	5	described	describe	VERB
fens-350	21	6	elsewhere	elsewhere	ADV
fens-350	21	7	,	,	PUNCT
fens-350	21	8	for	for	ADP
fens-350	21	9	example	example	NOUN
fens-350	21	10	in	in	ADP
fens-350	21	11	[	[	X
fens-350	21	12	3	3	NUM
fens-350	21	13	]	]	PUNCT
fens-350	21	14	.	.	PUNCT
fens-350	22	1	experiments	experiment	NOUN
fens-350	22	2	were	be	AUX
fens-350	22	3	carried	carry	VERB
fens-350	22	4	out	out	ADP
fens-350	22	5	in	in	ADP
fens-350	22	6	the	the	DET
fens-350	22	7	quartz	quartz	NOUN
fens-350	22	8	cell	cell	NOUN
fens-350	22	9	.	.	PUNCT
fens-350	23	1	on	on	ADP
fens-350	23	2	fig	fig	NOUN
fens-350	23	3	1	1	NUM
fens-350	23	4	the	the	DET
fens-350	23	5	typical	typical	ADJ
fens-350	23	6	volt	volt	NOUN
fens-350	23	7	-	-	PUNCT
fens-350	23	8	ampere	ampere	NOUN
fens-350	23	9	characteristic	characteristic	NOUN
fens-350	23	10	is	be	AUX
fens-350	23	11	presented	present	VERB
fens-350	23	12	from	from	ADP
fens-350	23	13	which	which	PRON
fens-350	23	14	one	one	PRON
fens-350	23	15	can	can	AUX
fens-350	23	16	determine	determine	VERB
fens-350	23	17	main	main	ADJ
fens-350	23	18	pec	pec	NOUN
fens-350	23	19	characteristics	characteristic	NOUN
fens-350	23	20	:	:	PUNCT
fens-350	23	21	open	open	ADJ
fens-350	23	22	circuit	circuit	NOUN
fens-350	23	23	voltage	voltage	NOUN
fens-350	23	24	,	,	PUNCT
fens-350	23	25	voc	voc	NOUN
fens-350	23	26	;	;	PUNCT
fens-350	23	27	short	short	ADJ
fens-350	23	28	circuiting	circuit	VERB
fens-350	23	29	current	current	ADJ
fens-350	23	30	density	density	NOUN
fens-350	23	31	,	,	PUNCT
fens-350	23	32	isc	isc	PROPN
fens-350	23	33	;	;	PUNCT
fens-350	23	34	dark	dark	PROPN
fens-350	23	35	current	current	ADJ
fens-350	23	36	,	,	PUNCT
fens-350	23	37	and	and	CCONJ
fens-350	23	38	fill	fill	NOUN
fens-350	23	39	factor	factor	NOUN
fens-350	23	40	,	,	PUNCT
fens-350	23	41	vm*im	vm*im	NOUN
fens-350	23	42	/	/	SYM
fens-350	23	43	voc*isc	voc*isc	NOUN
fens-350	23	44	.	.	PUNCT
fens-350	24	1	figure	figure	NOUN
fens-350	24	2	1	1	NUM
fens-350	24	3	.	.	NUM
fens-350	24	4	n	n	CCONJ
fens-350	24	5	-	-	PUNCT
fens-350	24	6	type	type	NOUN
fens-350	24	7	semiconductor	semiconductor	NOUN
fens-350	24	8	typical	typical	ADJ
fens-350	24	9	voltampere	voltampere	ADJ
fens-350	24	10	curve	curve	ADJ
fens-350	24	11	redox	redox	NOUN
fens-350	24	12	electrolyte	electrolyte	PROPN
fens-350	24	13	has	have	VERB
fens-350	24	14	the	the	DET
fens-350	24	15	following	follow	VERB
fens-350	24	16	formulae	formulae	NOUN
fens-350	24	17	:	:	PUNCT
fens-350	24	18	naoh	naoh	NOUN
fens-350	24	19	:	:	PUNCT
fens-350	24	20	s	s	X
fens-350	24	21	:	:	PUNCT
fens-350	25	1	na2s	na2s	PROPN
fens-350	25	2	=	=	NOUN
fens-350	25	3	1	1	NUM
fens-350	25	4	:	:	SYM
fens-350	25	5	1	1	NUM
fens-350	25	6	:	:	SYM
fens-350	25	7	1	1	NUM
fens-350	25	8	in	in	ADP
fens-350	25	9	m.	m.	NOUN
fens-350	25	10	the	the	DET
fens-350	25	11	calculated	calculate	VERB
fens-350	25	12	thickness	thickness	NOUN
fens-350	25	13	of	of	ADP
fens-350	25	14	cdse	cdse	NOUN
fens-350	25	15	coating	coat	VERB
fens-350	25	16	was	be	AUX
fens-350	25	17	circa	circa	NOUN
fens-350	25	18	0.5	0.5	NUM
fens-350	25	19	m.	m.	NOUN
fens-350	25	20	redox	redox	PROPN
fens-350	25	21	electrolyte	electrolyte	PROPN
fens-350	25	22	has	have	VERB
fens-350	25	23	the	the	DET
fens-350	25	24	following	follow	VERB
fens-350	25	25	formulae	formulae	NOUN
fens-350	25	26	:	:	PUNCT
fens-350	25	27	naoh	naoh	NOUN
fens-350	25	28	:	:	PUNCT
fens-350	25	29	s	s	X
fens-350	25	30	:	:	PUNCT
fens-350	26	1	na2s	na2s	PROPN
fens-350	26	2	=	=	NOUN
fens-350	26	3	1	1	NUM
fens-350	26	4	:	:	SYM
fens-350	26	5	1	1	NUM
fens-350	26	6	:	:	SYM
fens-350	26	7	1	1	NUM
fens-350	26	8	in	in	ADP
fens-350	26	9	m.	m.	NOUN
fens-350	26	10	rotating	rotating	NOUN
fens-350	26	11	disc	disc	NOUN
fens-350	26	12	electrode	electrode	NOUN
fens-350	26	13	(	(	PUNCT
fens-350	26	14	dia	dia	PROPN
fens-350	26	15	is	be	AUX
fens-350	26	16	5	5	NUM
fens-350	26	17	mm	mm	NOUN
fens-350	26	18	at	at	ADP
fens-350	26	19	800	800	NUM
fens-350	26	20	rpm	rpm	NOUN
fens-350	26	21	)	)	PUNCT
fens-350	26	22	was	be	AUX
fens-350	26	23	used	use	VERB
fens-350	26	24	for	for	ADP
fens-350	26	25	non	non	ADJ
fens-350	26	26	-	-	ADJ
fens-350	26	27	porous	porous	ADJ
fens-350	26	28	cdse	cdse	NOUN
fens-350	26	29	film	film	NOUN
fens-350	26	30	obtainment	obtainment	NOUN
fens-350	26	31	.	.	PUNCT
fens-350	27	1	se	se	PROPN
fens-350	27	2	bath	bath	NOUN
fens-350	27	3	formula	formula	NOUN
fens-350	27	4	is	be	AUX
fens-350	27	5	4	4	NUM
fens-350	27	6	mm	mm	NOUN
fens-350	27	7	seo2	seo2	NOUN
fens-350	27	8	,	,	PUNCT
fens-350	27	9	ph	ph	NOUN
fens-350	27	10	=	=	SYM
fens-350	27	11	2.2	2.2	NUM
fens-350	27	12	t	t	NOUN
fens-350	27	13	=	=	SYM
fens-350	27	14	90	90	NUM
fens-350	27	15	0c	0c	NOUN
fens-350	27	16	,	,	PUNCT
fens-350	27	17	t	t	NOUN
fens-350	27	18	=	=	SYM
fens-350	27	19	4	4	NUM
fens-350	27	20	min	min	NOUN
fens-350	27	21	,	,	PUNCT
fens-350	27	22	j=	j=	ADV
fens-350	27	23	1.2	1.2	NUM
fens-350	27	24	ma	ma	PROPN
fens-350	27	25	/	/	SYM
fens-350	27	26	cm2	cm2	PROPN
fens-350	27	27	.	.	PROPN
fens-350	27	28	porous	porous	ADJ
fens-350	27	29	cdse	cdse	NOUN
fens-350	27	30	were	be	AUX
fens-350	27	31	prepared	prepare	VERB
fens-350	27	32	according	accord	VERB
fens-350	27	33	to	to	ADP
fens-350	27	34	the	the	DET
fens-350	27	35	technology	technology	NOUN
fens-350	27	36	developed	develop	VERB
fens-350	27	37	for	for	ADP
fens-350	27	38	the	the	DET
fens-350	27	39	fabrication	fabrication	NOUN
fens-350	27	40	of	of	ADP
fens-350	27	41	pasted	paste	VERB
fens-350	27	42	cd	cd	NOUN
fens-350	27	43	electrodes	electrode	NOUN
fens-350	27	44	based	base	VERB
fens-350	27	45	on	on	ADP
fens-350	27	46	polyvinyl	polyvinyl	NOUN
fens-350	27	47	butyral	butyral	ADJ
fens-350	27	48	(	(	PUNCT
fens-350	27	49	pvb	pvb	NOUN
fens-350	27	50	)	)	PUNCT
fens-350	27	51	binder	binder	NOUN
fens-350	28	1	[	[	X
fens-350	28	2	4	4	NUM
fens-350	28	3	]	]	PUNCT
fens-350	28	4	.	.	PUNCT
fens-350	29	1	porosity	porosity	NOUN
fens-350	29	2	of	of	ADP
fens-350	29	3	the	the	DET
fens-350	29	4	electrodes	electrode	NOUN
fens-350	29	5	was	be	AUX
fens-350	29	6	determined	determine	VERB
fens-350	29	7	by	by	ADP
fens-350	29	8	the	the	DET
fens-350	29	9	bet	bet	NOUN
fens-350	29	10	method	method	NOUN
fens-350	29	11	and	and	CCONJ
fens-350	29	12	lies	lie	VERB
fens-350	29	13	within	within	ADP
fens-350	29	14	55–65	55–65	NUM
fens-350	29	15	%	%	NOUN
fens-350	29	16	.	.	PUNCT
fens-350	30	1	further	further	ADJ
fens-350	30	2	development	development	NOUN
fens-350	30	3	of	of	ADP
fens-350	30	4	the	the	DET
fens-350	30	5	se	se	PROPN
fens-350	30	6	layer	layer	NOUN
fens-350	30	7	on	on	ADP
fens-350	30	8	the	the	DET
fens-350	30	9	surface	surface	NOUN
fens-350	30	10	–	–	PUNCT
fens-350	30	11	and	and	CCONJ
fens-350	30	12	partially	partially	ADV
fens-350	30	13	within	within	ADP
fens-350	30	14	the	the	DET
fens-350	30	15	pores	pore	NOUN
fens-350	30	16	of	of	ADP
fens-350	30	17	the	the	DET
fens-350	30	18	cd	cd	PROPN
fens-350	30	19	electrode	electrode	NOUN
fens-350	30	20	–	–	PUNCT
fens-350	30	21	was	be	AUX
fens-350	30	22	performed	perform	VERB
fens-350	30	23	as	as	SCONJ
fens-350	30	24	is	be	AUX
fens-350	30	25	described	describe	VERB
fens-350	30	26	in	in	ADP
fens-350	30	27	our	our	PRON
fens-350	30	28	previous	previous	ADJ
fens-350	30	29	works	work	NOUN
fens-350	30	30	[	[	X
fens-350	30	31	4,5	4,5	NUM
fens-350	30	32	]	]	PUNCT
fens-350	30	33	.	.	PUNCT
fens-350	31	1	scanning	scan	VERB
fens-350	31	2	electron	electron	NOUN
fens-350	31	3	microscopy	microscopy	NOUN
fens-350	31	4	(	(	PUNCT
fens-350	31	5	sem	sem	NOUN
fens-350	31	6	)	)	PUNCT
fens-350	31	7	images	image	NOUN
fens-350	31	8	were	be	AUX
fens-350	31	9	taken	take	VERB
fens-350	31	10	on	on	ADP
fens-350	31	11	vega	vega	PROPN
fens-350	31	12	tescan	tescan	PROPN
fens-350	31	13	instrument	instrument	NOUN
fens-350	31	14	.	.	PUNCT
fens-350	32	1	3	3	X
fens-350	32	2	.	.	X
fens-350	32	3	results	result	NOUN
fens-350	32	4	and	and	CCONJ
fens-350	32	5	discussion	discussion	NOUN
fens-350	32	6	on	on	ADP
fens-350	32	7	figure	figure	NOUN
fens-350	32	8	2	2	NUM
fens-350	32	9	the	the	DET
fens-350	32	10	typical	typical	ADJ
fens-350	32	11	volt	volt	NOUN
fens-350	32	12	-	-	PUNCT
fens-350	32	13	ampere	ampere	NOUN
fens-350	32	14	characteristic	characteristic	NOUN
fens-350	32	15	is	be	AUX
fens-350	32	16	presented	present	VERB
fens-350	32	17	for	for	ADP
fens-350	32	18	the	the	DET
fens-350	32	19	flat	flat	ADJ
fens-350	32	20	(	(	PUNCT
fens-350	32	21	nonporous	nonporous	ADJ
fens-350	32	22	)	)	PUNCT
fens-350	32	23	cdse	cdse	PROPN
fens-350	32	24	pec	pec	NOUN
fens-350	32	25	obtained	obtain	VERB
fens-350	32	26	by	by	ADP
fens-350	32	27	the	the	DET
fens-350	32	28	rotating	rotate	VERB
fens-350	32	29	disc	disc	NOUN
fens-350	32	30	electrode	electrode	NOUN
fens-350	32	31	method	method	NOUN
fens-350	32	32	.	.	PUNCT
fens-350	33	1	figure	figure	NOUN
fens-350	33	2	2	2	NUM
fens-350	33	3	.	.	PUNCT
fens-350	33	4	rde	rde	VERB
fens-350	33	5	output	output	NOUN
fens-350	33	6	in	in	ADP
fens-350	33	7	polysulfide	polysulfide	ADJ
fens-350	33	8	redox	redox	PROPN
fens-350	33	9	electrolyte	electrolyte	NOUN
fens-350	33	10	please	please	INTJ
fens-350	33	11	note	note	VERB
fens-350	33	12	that	that	SCONJ
fens-350	33	13	this	this	DET
fens-350	33	14	figure	figure	NOUN
fens-350	33	15	curve	curve	NOUN
fens-350	33	16	is	be	AUX
fens-350	33	17	reversal	reversal	NOUN
fens-350	33	18	of	of	ADP
fens-350	33	19	the	the	DET
fens-350	33	20	fig	fig	NOUN
fens-350	33	21	.	.	PUNCT
fens-350	34	1	1	1	X
fens-350	34	2	.	.	X
fens-350	34	3	for	for	ADP
fens-350	34	4	the	the	DET
fens-350	34	5	rde	rde	PROPN
fens-350	34	6	case	case	NOUN
fens-350	34	7	we	we	PRON
fens-350	34	8	have	have	VERB
fens-350	34	9	practically	practically	ADV
fens-350	34	10	no	no	DET
fens-350	34	11	dark	dark	ADJ
fens-350	34	12	current	current	NOUN
fens-350	34	13	as	as	SCONJ
fens-350	34	14	one	one	PRON
fens-350	34	15	could	could	AUX
fens-350	34	16	easily	easily	ADV
fens-350	34	17	see	see	VERB
fens-350	34	18	from	from	ADP
fens-350	34	19	the	the	DET
fens-350	34	20	curve	curve	NOUN
fens-350	34	21	pattern	pattern	NOUN
fens-350	34	22	depicted	depict	VERB
fens-350	34	23	on	on	ADP
fens-350	34	24	fig	fig	NOUN
fens-350	34	25	.	.	PUNCT
fens-350	35	1	2	2	X
fens-350	35	2	.	.	X
fens-350	35	3	on	on	ADP
fens-350	35	4	fig	fig	NOUN
fens-350	35	5	.	.	PUNCT
fens-350	36	1	3	3	NUM
fens-350	36	2	the	the	DET
fens-350	36	3	same	same	ADJ
fens-350	36	4	plot	plot	NOUN
fens-350	36	5	for	for	ADP
fens-350	36	6	the	the	DET
fens-350	36	7	porous	porous	ADJ
fens-350	36	8	pec	pec	NOUN
fens-350	36	9	is	be	AUX
fens-350	36	10	provided	provide	VERB
fens-350	36	11	.	.	PUNCT
fens-350	37	1	figure	figure	NOUN
fens-350	37	2	3	3	NUM
fens-350	37	3	.	.	PUNCT
fens-350	37	4	porous	porous	ADJ
fens-350	37	5	cdse	cdse	NOUN
fens-350	37	6	output	output	NOUN
fens-350	37	7	in	in	ADP
fens-350	37	8	polysulfide	polysulfide	ADJ
fens-350	37	9	redox	redox	NOUN
fens-350	37	10	electrolyte	electrolyte	NOUN
fens-350	37	11	here	here	ADV
fens-350	37	12	,	,	PUNCT
fens-350	37	13	as	as	SCONJ
fens-350	37	14	opposed	oppose	VERB
fens-350	37	15	to	to	PART
fens-350	37	16	rde	rde	VERB
fens-350	37	17	experiments	experiment	NOUN
fens-350	37	18	,	,	PUNCT
fens-350	37	19	we	we	PRON
fens-350	37	20	have	have	AUX
fens-350	37	21	increased	increase	VERB
fens-350	37	22	dark	dark	ADJ
fens-350	37	23	current	current	ADJ
fens-350	37	24	and	and	CCONJ
fens-350	37	25	lower	low	ADJ
fens-350	37	26	output	output	NOUN
fens-350	37	27	.	.	PUNCT
fens-350	38	1	actually	actually	ADV
fens-350	38	2	,	,	PUNCT
fens-350	38	3	this	this	PRON
fens-350	38	4	is	be	AUX
fens-350	38	5	a	a	DET
fens-350	38	6	result	result	NOUN
fens-350	38	7	of	of	ADP
fens-350	38	8	poor	poor	ADJ
fens-350	38	9	se	se	ADJ
fens-350	38	10	deposition	deposition	NOUN
fens-350	38	11	inside	inside	ADP
fens-350	38	12	the	the	DET
fens-350	38	13	pores	pore	NOUN
fens-350	38	14	of	of	ADP
fens-350	38	15	the	the	DET
fens-350	38	16	cd	cd	NOUN
fens-350	38	17	-	-	PUNCT
fens-350	38	18	metal	metal	NOUN
fens-350	38	19	voc	voc	NOUN
fens-350	38	20	vm	vm	PROPN
fens-350	38	21	o	o	PROPN
fens-350	39	1	+	+	CCONJ
fens-350	39	2	i	i	PRON
fens-350	39	3	m	m	VERB
fens-350	39	4	isc	isc	PROPN
fens-350	40	1	+	+	PROPN
fens-350	40	2	i	i	PROPN
fens-350	40	3	food	food	NOUN
fens-350	40	4	and	and	CCONJ
fens-350	40	5	environment	environment	NOUN
fens-350	40	6	safety	safety	NOUN
fens-350	40	7	journal	journal	NOUN
fens-350	40	8	of	of	ADP
fens-350	40	9	faculty	faculty	NOUN
fens-350	40	10	of	of	ADP
fens-350	40	11	food	food	NOUN
fens-350	40	12	engineering	engineering	NOUN
fens-350	40	13	,	,	PUNCT
fens-350	40	14	tefan	tefan	PROPN
fens-350	40	15	cel	cel	PROPN
fens-350	40	16	mare	mare	PROPN
fens-350	40	17	university	university	PROPN
fens-350	40	18	suceava	suceava	PROPN
fens-350	40	19	volume	volume	PROPN
fens-350	40	20	x	x	NOUN
fens-350	40	21	,	,	PUNCT
fens-350	40	22	issue	issue	VERB
fens-350	40	23	3	3	NUM
fens-350	40	24	2011	2011	NUM
fens-350	40	25	86	86	NUM
fens-350	40	26	substrate	substrate	NOUN
fens-350	40	27	serving	serve	VERB
fens-350	40	28	as	as	ADP
fens-350	40	29	active	active	ADJ
fens-350	40	30	short	short	ADJ
fens-350	40	31	-	-	PUNCT
fens-350	40	32	circuiting	circuit	VERB
fens-350	40	33	centers	center	NOUN
fens-350	40	34	of	of	ADP
fens-350	40	35	the	the	DET
fens-350	40	36	pec	pec	NOUN
fens-350	40	37	.	.	PUNCT
fens-350	41	1	this	this	PRON
fens-350	41	2	is	be	AUX
fens-350	41	3	hard	hard	ADJ
fens-350	41	4	-	-	PUNCT
fens-350	41	5	toovercome	toovercome	NOUN
fens-350	41	6	technological	technological	ADJ
fens-350	41	7	issue	issue	NOUN
fens-350	41	8	with	with	ADP
fens-350	41	9	regard	regard	NOUN
fens-350	41	10	to	to	ADP
fens-350	41	11	porous	porous	ADJ
fens-350	41	12	systems	system	NOUN
fens-350	41	13	and	and	CCONJ
fens-350	41	14	our	our	PRON
fens-350	41	15	further	further	ADJ
fens-350	41	16	investigations	investigation	NOUN
fens-350	41	17	are	be	AUX
fens-350	41	18	focused	focus	VERB
fens-350	41	19	on	on	ADP
fens-350	41	20	the	the	DET
fens-350	41	21	use	use	NOUN
fens-350	41	22	of	of	ADP
fens-350	41	23	forced	force	VERB
fens-350	41	24	convection	convection	NOUN
fens-350	41	25	to	to	PART
fens-350	41	26	cover	cover	VERB
fens-350	41	27	the	the	DET
fens-350	41	28	inner	inner	ADJ
fens-350	41	29	pores	pore	NOUN
fens-350	41	30	of	of	ADP
fens-350	41	31	cd	cd	NOUN
fens-350	41	32	substrate	substrate	NOUN
fens-350	41	33	with	with	ADP
fens-350	41	34	cdse	cdse	NOUN
fens-350	41	35	layer	layer	NOUN
fens-350	41	36	.	.	PUNCT
fens-350	42	1	on	on	ADP
fens-350	42	2	figure	figure	NOUN
fens-350	42	3	3	3	NUM
fens-350	42	4	the	the	DET
fens-350	42	5	electron	electron	NOUN
fens-350	42	6	-	-	PUNCT
fens-350	42	7	microscope	microscope	NOUN
fens-350	42	8	images	image	NOUN
fens-350	42	9	of	of	ADP
fens-350	42	10	semiconductor	semiconductor	NOUN
fens-350	42	11	cdse	cdse	NOUN
fens-350	42	12	porous	porous	ADJ
fens-350	42	13	film	film	NOUN
fens-350	42	14	are	be	AUX
fens-350	42	15	presented	present	VERB
fens-350	42	16	.	.	PUNCT
fens-350	43	1	a	a	DET
fens-350	43	2	b	b	NOUN
fens-350	43	3	c	c	X
fens-350	43	4	figure	figure	NOUN
fens-350	43	5	4	4	NUM
fens-350	43	6	.	.	PUNCT
fens-350	43	7	sem	sem	ADJ
fens-350	43	8	images	image	NOUN
fens-350	43	9	of	of	ADP
fens-350	43	10	the	the	DET
fens-350	43	11	semiconductor	semiconductor	NOUN
fens-350	43	12	cdse	cdse	NOUN
fens-350	43	13	porous	porous	ADJ
fens-350	43	14	film	film	NOUN
fens-350	43	15	magnifications	magnification	NOUN
fens-350	43	16	:	:	PUNCT
fens-350	43	17	a.	a.	NOUN
fens-350	43	18	10220x	10220x	PROPN
fens-350	43	19	,	,	PUNCT
fens-350	43	20	b.	b.	PROPN
fens-350	43	21	3950x	3950x	PROPN
fens-350	43	22	,	,	PUNCT
fens-350	43	23	c.	c.	NOUN
fens-350	43	24	1000x	1000x	NUM
fens-350	43	25	.	.	PUNCT
fens-350	44	1	as	as	ADP
fens-350	44	2	fig	fig	NOUN
fens-350	44	3	.	.	PUNCT
fens-350	45	1	3c	3c	NUM
fens-350	45	2	shows	show	VERB
fens-350	45	3	,	,	PUNCT
fens-350	45	4	the	the	DET
fens-350	45	5	produced	produce	VERB
fens-350	45	6	porous	porous	ADJ
fens-350	45	7	layers	layer	NOUN
fens-350	45	8	are	be	AUX
fens-350	45	9	homogenous	homogenous	ADJ
fens-350	45	10	with	with	ADP
fens-350	45	11	even	even	ADJ
fens-350	45	12	distribution	distribution	NOUN
fens-350	45	13	of	of	ADP
fens-350	45	14	the	the	DET
fens-350	45	15	binder	binder	NOUN
fens-350	45	16	(	(	PUNCT
fens-350	45	17	pvb	pvb	NOUN
fens-350	45	18	)	)	PUNCT
fens-350	45	19	throughout	throughout	ADP
fens-350	45	20	the	the	DET
fens-350	45	21	porous	porous	ADJ
fens-350	45	22	structure	structure	NOUN
fens-350	45	23	.	.	PUNCT
fens-350	46	1	according	accord	VERB
fens-350	46	2	to	to	ADP
fens-350	46	3	fig	fig	NOUN
fens-350	46	4	.	.	PUNCT
fens-350	47	1	3a	3a	NUM
fens-350	47	2	,	,	PUNCT
fens-350	47	3	the	the	DET
fens-350	47	4	diameter	diameter	NOUN
fens-350	47	5	of	of	ADP
fens-350	47	6	the	the	DET
fens-350	47	7	main	main	ADJ
fens-350	47	8	pores	pore	NOUN
fens-350	47	9	is	be	AUX
fens-350	47	10	ca	can	AUX
fens-350	47	11	2	2	NUM
fens-350	47	12	µm	µm	NOUN
fens-350	47	13	.	.	PUNCT
fens-350	48	1	the	the	DET
fens-350	48	2	results	result	NOUN
fens-350	48	3	of	of	ADP
fens-350	48	4	an	an	DET
fens-350	48	5	elementary	elementary	ADJ
fens-350	48	6	analysis	analysis	NOUN
fens-350	48	7	are	be	AUX
fens-350	48	8	presented	present	VERB
fens-350	48	9	in	in	ADP
fens-350	48	10	the	the	DET
fens-350	48	11	table	table	NOUN
fens-350	48	12	.	.	PUNCT
fens-350	49	1	table	table	NOUN
fens-350	49	2	the	the	DET
fens-350	49	3	results	result	NOUN
fens-350	49	4	of	of	ADP
fens-350	49	5	semiconductor	semiconductor	NOUN
fens-350	49	6	cdse	cdse	NOUN
fens-350	49	7	electrode	electrode	PROPN
fens-350	49	8	elementary	elementary	ADJ
fens-350	49	9	analysis	analysis	NOUN
fens-350	49	10	element	element	NOUN
fens-350	49	11	weight%	weight%	X
fens-350	49	12	atomic%	atomic%	X
fens-350	49	13	o	o	NOUN
fens-350	49	14	13.38	13.38	NUM
fens-350	49	15	43.23	43.23	NUM
fens-350	49	16	na	na	PART
fens-350	49	17	4.55	4.55	NUM
fens-350	49	18	10.23	10.23	NUM
fens-350	49	19	s	s	PART
fens-350	49	20	3.20	3.20	NUM
fens-350	49	21	5.15	5.15	NUM
fens-350	49	22	se	se	ADP
fens-350	49	23	26.36	26.36	NUM
fens-350	49	24	17.25	17.25	NUM
fens-350	49	25	cd	cd	PROPN
fens-350	49	26	52.51	52.51	NUM
fens-350	49	27	24.14	24.14	NUM
fens-350	49	28	as	as	SCONJ
fens-350	49	29	it	it	PRON
fens-350	49	30	follows	follow	VERB
fens-350	49	31	from	from	ADP
fens-350	49	32	the	the	DET
fens-350	49	33	table	table	NOUN
fens-350	49	34	,	,	PUNCT
fens-350	49	35	the	the	DET
fens-350	49	36	mass	mass	ADJ
fens-350	49	37	content	content	NOUN
fens-350	49	38	of	of	ADP
fens-350	49	39	sulfur	sulfur	NOUN
fens-350	49	40	is	be	AUX
fens-350	49	41	3.2	3.2	NUM
fens-350	49	42	%	%	NOUN
fens-350	49	43	which	which	PRON
fens-350	49	44	inculcates	inculcate	VERB
fens-350	49	45	into	into	ADP
fens-350	49	46	the	the	DET
fens-350	49	47	electrode	electrode	NOUN
fens-350	49	48	structure	structure	NOUN
fens-350	49	49	due	due	ADP
fens-350	49	50	to	to	ADP
fens-350	49	51	presence	presence	NOUN
fens-350	49	52	of	of	ADP
fens-350	49	53	free	free	ADJ
fens-350	49	54	cd	cd	PROPN
fens-350	49	55	on	on	ADP
fens-350	49	56	the	the	DET
fens-350	49	57	surface	surface	NOUN
fens-350	49	58	of	of	ADP
fens-350	49	59	the	the	DET
fens-350	49	60	electrode	electrode	NOUN
fens-350	49	61	to	to	PART
fens-350	49	62	produce	produce	VERB
fens-350	49	63	cds	cd	NOUN
fens-350	49	64	.	.	PUNCT
fens-350	50	1	this	this	PRON
fens-350	50	2	is	be	AUX
fens-350	50	3	a	a	DET
fens-350	50	4	non	non	ADJ
fens-350	50	5	-	-	ADJ
fens-350	50	6	direct	direct	ADJ
fens-350	50	7	proof	proof	NOUN
fens-350	50	8	of	of	ADP
fens-350	50	9	the	the	DET
fens-350	50	10	presence	presence	NOUN
fens-350	50	11	of	of	ADP
fens-350	50	12	metallic	metallic	ADJ
fens-350	50	13	phase	phase	NOUN
fens-350	50	14	on	on	ADP
fens-350	50	15	the	the	DET
fens-350	50	16	cdse	cdse	NOUN
fens-350	50	17	porous	porous	ADJ
fens-350	50	18	structure	structure	NOUN
fens-350	50	19	which	which	PRON
fens-350	50	20	is	be	AUX
fens-350	50	21	the	the	DET
fens-350	50	22	main	main	ADJ
fens-350	50	23	culprit	culprit	NOUN
fens-350	50	24	of	of	ADP
fens-350	50	25	deterioration	deterioration	NOUN
fens-350	50	26	of	of	ADP
fens-350	50	27	the	the	DET
fens-350	50	28	characteristics	characteristic	NOUN
fens-350	50	29	’	'	PUNCT
fens-350	50	30	of	of	ADP
fens-350	50	31	the	the	DET
fens-350	50	32	porous	porous	ADJ
fens-350	50	33	pec	pec	NOUN
fens-350	50	34	.	.	PUNCT
fens-350	51	1	on	on	ADP
fens-350	51	2	the	the	DET
fens-350	51	3	other	other	ADJ
fens-350	51	4	hand	hand	NOUN
fens-350	51	5	,	,	PUNCT
fens-350	51	6	the	the	DET
fens-350	51	7	mass	mass	ADJ
fens-350	51	8	ration	ration	NOUN
fens-350	51	9	of	of	ADP
fens-350	51	10	cd	cd	PROPN
fens-350	51	11	and	and	CCONJ
fens-350	51	12	se	se	X
fens-350	51	13	in	in	ADP
fens-350	51	14	the	the	DET
fens-350	51	15	semiconductor	semiconductor	NOUN
fens-350	51	16	is	be	AUX
fens-350	51	17	21.2/19.2	21.2/19.2	PROPN
fens-350	51	18	,	,	PUNCT
fens-350	51	19	respectively	respectively	ADV
fens-350	51	20	if	if	SCONJ
fens-350	51	21	we	we	PRON
fens-350	51	22	exclude	exclude	VERB
fens-350	51	23	se	se	X
fens-350	51	24	in	in	ADP
fens-350	51	25	-	-	PUNCT
fens-350	51	26	electrode	electrode	NOUN
fens-350	51	27	structure	structure	NOUN
fens-350	51	28	invasion	invasion	NOUN
fens-350	51	29	.	.	PUNCT
fens-350	52	1	this	this	DET
fens-350	52	2	result	result	NOUN
fens-350	52	3	corresponds	correspond	VERB
fens-350	52	4	to	to	ADP
fens-350	52	5	cd0.53se0.47	cd0.53se0.47	PROPN
fens-350	52	6	which	which	PRON
fens-350	52	7	is	be	AUX
fens-350	52	8	close	close	ADJ
fens-350	52	9	to	to	ADP
fens-350	52	10	of	of	ADP
fens-350	52	11	lightsensitive	lightsensitive	ADJ
fens-350	52	12	monoclinic	monoclinic	ADJ
fens-350	52	13	2	2	NUM
fens-350	52	14	phase	phase	NOUN
fens-350	52	15	composition	composition	NOUN
fens-350	52	16	.	.	PUNCT
fens-350	53	1	conclusion	conclusion	NOUN
fens-350	53	2	experiments	experiment	NOUN
fens-350	53	3	show	show	VERB
fens-350	53	4	that	that	SCONJ
fens-350	53	5	it	it	PRON
fens-350	53	6	is	be	AUX
fens-350	53	7	possible	possible	ADJ
fens-350	53	8	to	to	PART
fens-350	53	9	develop	develop	VERB
fens-350	53	10	cdse	cdse	VERB
fens-350	53	11	light	light	ADJ
fens-350	53	12	-	-	PUNCT
fens-350	53	13	sensitive	sensitive	ADJ
fens-350	53	14	phase	phase	NOUN
fens-350	53	15	electrochemically	electrochemically	ADV
fens-350	53	16	corresponding	correspond	VERB
fens-350	53	17	to	to	ADP
fens-350	53	18	monoclinic	monoclinic	ADJ
fens-350	53	19	2	2	NUM
fens-350	53	20	phase	phase	NOUN
fens-350	53	21	on	on	ADP
fens-350	53	22	the	the	DET
fens-350	53	23	highly	highly	ADV
fens-350	53	24	-	-	PUNCT
fens-350	53	25	porous	porous	ADJ
fens-350	53	26	substrate	substrate	NOUN
fens-350	53	27	.	.	PUNCT
fens-350	54	1	higher	high	ADJ
fens-350	54	2	porosity	porosity	NOUN
fens-350	54	3	not	not	PART
fens-350	54	4	only	only	ADV
fens-350	54	5	increases	increase	VERB
fens-350	54	6	the	the	DET
fens-350	54	7	light	light	ADJ
fens-350	54	8	response	response	NOUN
fens-350	54	9	of	of	ADP
fens-350	54	10	the	the	DET
fens-350	54	11	pec	pec	NOUN
fens-350	54	12	due	due	ADP
fens-350	54	13	to	to	ADP
fens-350	54	14	band	band	NOUN
fens-350	54	15	bending	bending	NOUN
fens-350	54	16	of	of	ADP
fens-350	54	17	the	the	DET
fens-350	54	18	cdse	cdse	NOUN
fens-350	54	19	semiconductor	semiconductor	NOUN
fens-350	54	20	,	,	PUNCT
fens-350	54	21	but	but	CCONJ
fens-350	54	22	the	the	DET
fens-350	54	23	porous	porous	ADJ
fens-350	54	24	structure	structure	NOUN
fens-350	54	25	could	could	AUX
fens-350	54	26	lead	lead	VERB
fens-350	54	27	to	to	PART
fens-350	54	28	pec	pec	VERB
fens-350	54	29	overall	overall	ADJ
fens-350	54	30	output	output	NOUN
fens-350	54	31	power	power	NOUN
fens-350	54	32	enhancement	enhancement	NOUN
fens-350	54	33	thanks	thank	NOUN
fens-350	54	34	to	to	ADP
fens-350	54	35	reduced	reduced	ADJ
fens-350	54	36	voltage	voltage	NOUN
fens-350	54	37	drop	drop	NOUN
fens-350	54	38	in	in	ADP
fens-350	54	39	the	the	DET
fens-350	54	40	electrolyte	electrolyte	NOUN
fens-350	54	41	.	.	PUNCT
fens-350	55	1	this	this	PRON
fens-350	55	2	is	be	AUX
fens-350	55	3	because	because	SCONJ
fens-350	55	4	,	,	PUNCT
fens-350	55	5	in	in	ADP
fens-350	55	6	this	this	DET
fens-350	55	7	pec	pec	NOUN
fens-350	55	8	configuration	configuration	NOUN
fens-350	55	9	,	,	PUNCT
fens-350	55	10	the	the	DET
fens-350	55	11	counter	counter	ADJ
fens-350	55	12	electrode	electrode	NOUN
fens-350	55	13	could	could	AUX
fens-350	55	14	be	be	AUX
fens-350	55	15	positioned	position	VERB
fens-350	55	16	directly	directly	ADV
fens-350	55	17	behind	behind	ADP
fens-350	55	18	the	the	DET
fens-350	55	19	semiconductor	semiconductor	NOUN
fens-350	55	20	electrode	electrode	NOUN
fens-350	55	21	as	as	SCONJ
fens-350	55	22	it	it	PRON
fens-350	55	23	has	have	AUX
fens-350	55	24	open	open	ADV
fens-350	55	25	-	-	PUNCT
fens-350	55	26	ended	end	VERB
fens-350	55	27	pores	pore	NOUN
fens-350	55	28	with	with	ADP
fens-350	55	29	redox	redox	ADJ
fens-350	55	30	ions	ion	NOUN
fens-350	55	31	’	'	PUNCT
fens-350	55	32	shorter	short	ADJ
fens-350	55	33	run	run	NOUN
fens-350	55	34	path	path	NOUN
fens-350	55	35	in	in	ADP
fens-350	55	36	between	between	ADP
fens-350	55	37	the	the	DET
fens-350	55	38	lightsensitive	lightsensitive	ADJ
fens-350	55	39	and	and	CCONJ
fens-350	55	40	counter	counter	NOUN
fens-350	55	41	electrode	electrode	NOUN
fens-350	55	42	.	.	PUNCT
fens-350	56	1	references	reference	NOUN
fens-350	56	2	1	1	NUM
fens-350	56	3	.	.	PUNCT
fens-350	56	4	martirosyan	martirosyan	PROPN
fens-350	56	5	s.	s.	PROPN
fens-350	56	6	,	,	PUNCT
fens-350	56	7	hovsepyan	hovsepyan	PROPN
fens-350	56	8	g.	g.	PROPN
fens-350	56	9	,	,	PUNCT
fens-350	56	10	zourabyan	zourabyan	NOUN
fens-350	56	11	p.	p.	NOUN
fens-350	56	12	method	method	NOUN
fens-350	56	13	of	of	ADP
fens-350	56	14	binary	binary	PROPN
fens-350	56	15	chaleogenide	chaleogenide	PROPN
fens-350	56	16	semiconductor	semiconductor	NOUN
fens-350	56	17	film	film	NOUN
fens-350	56	18	fabrication	fabrication	NOUN
fens-350	56	19	.	.	PUNCT
fens-350	57	1	patent	patent	NOUN
fens-350	57	2	#	#	SYM
fens-350	57	3	139	139	NUM
fens-350	57	4	.	.	PUNCT
fens-350	58	1	industrial	industrial	ADJ
fens-350	58	2	property	property	NOUN
fens-350	58	3	#	#	SYM
fens-350	58	4	4	4	NUM
fens-350	58	5	,	,	PUNCT
fens-350	58	6	2003	2003	NUM
fens-350	58	7	.	.	PUNCT
fens-350	59	1	2	2	X
fens-350	59	2	.	.	X
fens-350	59	3	martirosyan	martirosyan	PROPN
fens-350	59	4	s.	s.	PROPN
fens-350	59	5	streamlining	streamline	VERB
fens-350	59	6	cdse	cdse	PROPN
fens-350	59	7	/	/	SYM
fens-350	59	8	cds	cds	PROPN
fens-350	59	9	pec	pec	PROPN
fens-350	59	10	characteristics	characteristic	NOUN
fens-350	59	11	using	use	VERB
fens-350	59	12	cd	cd	PROPN
fens-350	59	13	metal	metal	NOUN
fens-350	59	14	collector.solar	collector.solar	ADJ
fens-350	59	15	energy	energy	NOUN
fens-350	59	16	materials	material	NOUN
fens-350	59	17	and	and	CCONJ
fens-350	59	18	solar	solar	ADJ
fens-350	59	19	cells	cell	NOUN
fens-350	59	20	.	.	PUNCT
fens-350	60	1	elsevier	elsevier	NOUN
fens-350	60	2	,	,	PUNCT
fens-350	60	3	70	70	NUM
fens-350	60	4	,	,	PUNCT
fens-350	60	5	p.	p.	NOUN
fens-350	60	6	115	115	NUM
fens-350	60	7	(	(	PUNCT
fens-350	60	8	2001	2001	NUM
fens-350	60	9	)	)	PUNCT
fens-350	60	10	3	3	NUM
fens-350	60	11	.	.	PUNCT
fens-350	60	12	bouroushian	bouroushian	PROPN
fens-350	60	13	m.	m.	NOUN
fens-350	60	14	,	,	PUNCT
fens-350	60	15	loizos	loizos	PROPN
fens-350	60	16	z.	z.	PROPN
fens-350	60	17	,	,	PUNCT
fens-350	60	18	spyrellis	spyrellis	PROPN
fens-350	60	19	n.	n.	NOUN
fens-350	60	20	,	,	PUNCT
fens-350	60	21	maurin	maurin	NOUN
fens-350	60	22	g.	g.	PROPN
fens-350	60	23	thin	thin	PROPN
fens-350	60	24	solid	solid	ADJ
fens-350	60	25	films	film	NOUN
fens-350	60	26	.	.	PUNCT
fens-350	61	1	101	101	NUM
fens-350	61	2	,	,	PUNCT
fens-350	61	3	(	(	PUNCT
fens-350	61	4	1993	1993	NUM
fens-350	61	5	)	)	PUNCT
fens-350	61	6	4	4	NUM
fens-350	61	7	.	.	X
fens-350	61	8	martirosyan	martirosyan	PROPN
fens-350	61	9	s.	s.	PROPN
fens-350	61	10	,	,	PUNCT
fens-350	61	11	hovsepyan	hovsepyan	PROPN
fens-350	61	12	g.	g.	PROPN
fens-350	61	13	,	,	PUNCT
fens-350	61	14	kocharyan	kocharyan	PROPN
fens-350	61	15	h.	h.	PROPN
fens-350	61	16	porous	porous	ADJ
fens-350	61	17	cdse	cdse	NOUN
fens-350	61	18	films	film	NOUN
fens-350	61	19	in	in	ADP
fens-350	61	20	pecs	pecs	NOUN
fens-350	61	21	third	third	ADJ
fens-350	61	22	international	international	ADJ
fens-350	61	23	conference	conference	NOUN
fens-350	61	24	of	of	ADP
fens-350	61	25	renewable	renewable	ADJ
fens-350	61	26	and	and	CCONJ
fens-350	61	27	pure	pure	ADJ
fens-350	61	28	energy	energy	NOUN
fens-350	61	29	.	.	PUNCT
fens-350	62	1	–	–	PUNCT
fens-350	62	2	yerevan	yerevan	PROPN
fens-350	62	3	2008	2008	NUM
fens-350	62	4	,	,	PUNCT
fens-350	62	5	june	june	PROPN
fens-350	62	6	27	27	NUM
fens-350	62	7	-	-	SYM
fens-350	62	8	29	29	NUM
fens-350	62	9	.	.	PUNCT
fens-350	62	10	5	5	NUM
fens-350	62	11	.	.	X
fens-350	62	12	martirosyan	martirosyan	PROPN
fens-350	62	13	s.	s.	PROPN
fens-350	62	14	,	,	PUNCT
fens-350	62	15	kocharyan	kocharyan	PROPN
fens-350	62	16	h.	h.	PROPN
fens-350	62	17	porous	porous	ADJ
fens-350	62	18	cdse	cdse	NOUN
fens-350	62	19	electrodes	electrode	VERB
fens-350	62	20	fabrication	fabrication	NOUN
fens-350	62	21	international	international	ADJ
fens-350	62	22	conference	conference	NOUN
fens-350	62	23	:	:	PUNCT
fens-350	62	24	enikolopov	enikolopov	PROPN
fens-350	62	25	's	's	PART
fens-350	62	26	readings.2006	readings.2006	PROPN
fens-350	62	27	.	.	PUNCT
fens-350	63	1	p.98	p.98	PRON