Microsoft Word - numero 15 articolo 3 C di Kl Ch kla De Fra AB cer dir add itse hig Th mi nu Th str int cra len Th est tre KE IN M rack pro irect bo laus Vogel hemnitz Unive aus.vogel@s20 etlef Billep aunhofer Resea BSTRACT. W rtain interme rect bonding dition to the elf. It can va gher toughne he fracture to cro-chevron merical anal he maximum ess intensity tensity coeffi ack. The str ngth itself. he paper is timation of d eatments and EYWORDS. C NTRODUCTIO icro E comp millimM opagati onded si , Dirk Wu ersity of Techno 005.tu-chemni p, Maik Wi arch Institutio Wafer bondin ediate layers g technology e wafer mat ary for differ ess of the bo oughness is n-specimen, lysis with exp m force is m y coefficient ficient is the ress intensity focused on dimensionle d annealing t Compliance m ON Electro Mech plex by using metre range ( ion in m ilicon-si ensch, Ale ology, 09107 itz.de, dirk.wu iemer on for Electron ng describe . Current inv y. It is carrie terials, the t rent pre-trea onded interf a suitable va the fractur perimental m measured dur t can be det compliance y coefficien the micro- ss stress inte temperatures method; FE hanical System g different m (smaller than K. Vogel et micro-ch ilicon w exey Shapo Chemnitz uensch@zfm.tu nic Nano Syste s all techno vestigations ed out witho toughness o atments. Fur face. alue to descr re toughnes measuremen ring a micro termined by method. Th t can be dir -chevron-tes ensity coeffi s on the mea E-analysis; Fr ms (MEMS) a aterials in on 100 µm) wh alii, Frattura ed hevron-t wafers orin, Jan M tu-chemnitz.de ems ENAS, ologies for j are focused out intermed f the bonde rthermore, a ribe the dam ss can be d nt of the max o-chevron-te y a FE-simu he complian rectly derive st for direct icient as a fu asured maxi racture tough are applied in ne system. ME hich determin d Integrità Struttu test sam Mehner Technologie-C joining two d on so-calle diate layers ed interface an increase o mage behavio determined ximum force est using a M ulation only. ce of the wh ed from the t bonded sil unction of ge imum force hness; Micro n a wide indus EMS have at nes its functio turale, 15 (2011) mples of Campus 3, 091 or more s d low tempe and at temp also depend of the annea our of the bo either num e. Mode I load One possib hole specime e simulated licon-silicon eometry, the are analysed o-chevron-te strial range. T t least one ty on [1]. They ) 21-28; DOI: 10 f 126 Chemnitz substrates di erature bond peratures be ds on the b aling temper onded interf merically or ding. The m bility to esti en increases compliance n wafers. Ad e influence o d and discuss est; Silicon d Their structur ypical compon often consist 0.3221/IGF-ESIS. z; irectly or us ding as a spe elow 400 °C onding proc rature leads face. Based o by combin minimum of imate the st with a grow e and the cr dditional to of different p sed. direct bondin res become m nent size in s t of two or m 15.03 21 sing ecial C. In cess to a on a ning the tress wing rack the pre- ng. more sub- more http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it mailto: klaus.vogel@s2005.tu-chemnitz.de mailto: dirk.wuensch@zfm.tu-chemnitz.de K. V 22 com dur req Th all ove In like clea tem low Bes in a fre 100 To hyd tem tem con num the out bon for Vogel et alii, Fra mponents an ring the man quired to char he behaviour o technologies erview of diff Without intermedia With intermedia particular, dir e in eutectic an and smoo mperatures ha w pressure pl sides remote a fine vacuum quency of 13 0 V [4]. understand drophilic fus mperatures in mperature is ntacting the w mber of silan e bond streng tside or throu nds between rm covalent si attura ed Integrit nd have to be nufacturing p racterise such of the structu s for joining ferent bondin Bo ate layer Sil Bo wi pla An (AB Th Co Bo ate layer Eu Ad Gl rect bonding or adhesive b oth surfaces ave to be redu lasma or ion and sequenti m with typica 3.56 MHz is u the mechani ion bonding n order to dev caused by hy wafers. The b nol groups (Si gth between ugh the nativ the silanol g iloxane bond tà Strutturale, 15 e joined by w process and t h structures. ure depends o two or mor ng technologi onding licon Direct onding (SDB) ith and witho asma activatio nodic Bondin B) hermo- ompression onding utectic Bondin dhesive Bond las Frit Bondi T has a major a bonding are r before annea uced. This red beam treatm ial plasma, a c al ranges of 1 used. Compar ism of a pla g. The proce velop strong ydrogen bon bonding stren i-OH) and wa the two waf ve oxide to th groups. By in ds [5-8]. 5 (2011) 21-28; wafer bonding to provide da on the bonde re substrates es [2, 3]. Mate ) ut on polish of an dopin chem ng silico mater ng subst ing silico polym (ceram epoxy ceram ing subst Table 1: Overv advantage wit required. Thi aling them to duction can b ment. The sur commonly us 10 Pa to 20 P red to conven sma treatmen ess includes t g covalent bo nds between t ngth especiall ater molecule fers. Thereby he bulk mater ncreasing the ; DOI: 10.3221/IG g. To ensure ata for furth ed interface an directly or rial hed wafers of ny orientation ng with natur mical, or therm on, borosilicat rials such as C trate and Au on / glass, pla mers, special m mics, metals, y resins, UV mic adhesives trate + glass f view of bondin thin the pack is technology o temperatur be done using rface can be sed mode is th Pa with a con ntionally bias nt on the su the pre-bond nds. For hyd the water mo ly depends on s. A subseque y, the water m rial. The wafe temperature GF-ESIS.15.03 their functio her FE-simula nd the bondi using certain f silicon (wafe and basic ral, thin mal oxide ) te glass Cu, Au, Ti astics / materials PCB, tapes), adhesives, , photo resist frit - substrate ng technologie kaging proces y uses the for res up to 110 g surface activ activated by he reactive io ntinuous gas f s voltage the i urface, it is n ding at room drophilic dire olecules loca n the number ent heat treat molecules dif ers move clos the opposin onality and re ations, signifi ing process it n intermediat Tempe fers low tem 110 … high te 800 … 210 … 300 … Au-Si Au-Sn Cu-Sn Al-Si 5 ts room t e 430 °C es. s because no rmation of co 00 °C. For m vating proced a variety of n-etching (RI flow in the re ions are only necessary to e m temperatur ect bonding, t ted on the o r of hydrogen tment (anneal ffuse out eith ser towards ea ng silanol gro eliability as w ficant materia tself. Wafer b te layers. Tab erature mperature bo … 400 °C, emperature b … 1100 °C … 450 °C … 400 °C 363 °C, n 280 °C, n 350 °C, 577 °C temperature C additional in ovalent bonds many applica dures prior to f low pressure IE). The RIE eactor chamb y accelerated b explain the p re and an an the bonding opposing waf n bonds and ling) is carried her along the ach other and oups react wi well as the qu al parameters onding descr b. 1 provides onding onding … 300 °C ntermediate la s for joining ations these h bonding suc e plasma mo E-system oper ber. An opera by approxima procedure of nnealing at h process at ro fer surfaces a therefore on d out, to incr e interface to d form hydro ith each othe uality s are ribes s an ayers two high ch as odes. rates ation ately f the high oom after n the rease the ogen er to http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it Th mic exp TH Th as uns Th app par Wh YM On ana T he fracture tou cro-chevron- perimental de HEORY he analy width w of 10 m he height of th well as the structured ch he bonded chi proximately t rameters widt ICK  hile the maxi MIN is determin ne possibility alysis. With T ughness is on specimen, the etermination c ysed samples w and thicknes m, Fig. 1. he specimen d structure hei hip varies for d Figu ip is loaded p to a Mode I th and thickn MAX MIN F Y t w   imum force F ned by FE-sim to estimate th an extension ne of the suita e fracture tou can be execut consist of tw ss t are equal depends on t ight, Fig. 2. different mat ure 1: Geometr Figure 2: Mic perpendicular I crack open ness by FMAX can be mulation. he stress inten n of the cra K. Vogel et able values to ughness of th ted by combin wo single chi [9, 10]. The the height of While the h terial combina ry of a micro-ch cro-chevron-sp to the x-y-pl ning. So the measured du nsity coefficie ack length, t alii, Frattura ed o describe the his specimen c ning experim ips bonded to analysis is fo the unstructu height of the ations. hevron-specim pecimen prepa lane in front fracture toug uring a tensil ent is the com the complian d Integrità Struttu damage beha can be determ ment with num ogether. Beca ocused on spe ured wafer hw1 e structured men compared ared from a pro of the sharp ghness KIC c le test, the m mpliance meth nce of the s turale, 15 (2011) aviour of the mined numeri merical analysi ause they hav ecimens with 1 and the heig chip is kept to an one cent ocessed wafer. notch. The li can be calcul minimum of t hod. It comb specimen inc ) 21-28; DOI: 10 bonded inter ically and exp is. ve a quadrati both a width ght of the stru constant, th t coin. ifting of the c lated against the stress inte ines experim creases too. 0.3221/IGF-ESIS. rface. Based o perimentally. c footprint, t h and a thickn uctured wafer he height of crack fronts le the geomet (1) ensity coeffic ent with num By keeping 15.03 23 on a The their ness r hw2 f the eads rical cient meric the http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it K. V 24 dis rela the Aft [10 the Its tou EX the pre hou and I Vogel et alii, Fra placement uz ative crack len a w   e compliance ( )C   ter scaling the 0] '( )C   e function of ( )Y   minimum, t ughness. XPERIMENT n addition micro-chev divided int e particle conc e-bonded at r urs. The anne d the bottom I attura ed Integrit z constant, the ngths 0 0 a w   C() can be i ( ) zu F   e compliance ( 1 ² E t C       the stress inte 1 2 d C d    the stress int T to the numer vron-test. Bef to the followi centration ha room tempera ealing conditi of the specim tà Strutturale, 15 e reaction for 1 1 a w   interpolated, with the thic ) ensity coeffic 1 0 0 '( )         tensity coeffi rical determin fore carrying ing steps. Fir as to be reduc ature afterwar ions can vary men, Fig. 3. B Figu 5 (2011) 21-28; rces F are sim using the equ ckness t of the cient can be d cient YMIN c nation of the out the expe rst, all Si wafe ced within a s rds. Before di y between dif Before starting ure 3: Preparati ; DOI: 10.3221/IG mulated subje uation e sample, the determined can be calcula stress intensi eriments, the ers are RCA-c spin dryer, aft icing the wafe fferent batche g the experim ion of the micr GF-ESIS.15.03 ected to a wel e Young’s mo ated. Insertin ity coefficient samples have cleaned befor ter rinsing the fer stacks into es. To initiate ment, the spec ro-chevron-sam ll defined cra odulus E and ng YMIN in t the maximu e to be prepa re applying th e wafers in de o specimens, t e the force, tw cimen has to b mples. ack propagati the Poissons Eq. (1) leads um force is m ared. Their pr he low pressu eionised wate they have to b wo studs are be preloaded on. For diffe (2) (3) ratio  of sili (4) (5) s to the frac measured durin reparation can ure plasma. T er. The wafers be annealed f glued on the . erent icon cture ng a n be Then s are for 6 top http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it Th for tow pro Th trea 150 An fur the he experiment rces subjected ward the max opagation bec he first series atment. In th 0 °C, Fig. 5. n increase of rther pre-treat e one for anne t is carried ou d to the applie ximum force comes instabl F s of experim hat case, no p m ea su re d fo rc e [N ] Figure 5: the annealing tment and an ealing temper ut displaceme ed deflection FMAX before le and the spe Figure 4: Exper ments focus o plasma activat 0.00 0.0 0.3 0.6 0.9 1.2 1.5 1.8 m ea su re d fo rc e [N ] Force displace g temperature n annealing te ratures of onl K. Vogel et ent controlled . When the c e decreasing a ecimen fails. T rimental setup on the heat tion has been 0.01 0.02 ap ement curves fo e leads to an emperature o ly 40 °C. alii, Frattura ed d. Therefore rack length a again. When The measured for the measu treatment of n carried out. 2 0.03 pplied displace for different he n increase of of 150 °C, the d Integrità Struttu a micro-chev a reaches its c the crack len d force becom rement of the f the specime Their anneal 0.04 0.05 ement [mm] eat treatments the measured e measured m turale, 15 (2011) vron-tester is ritical value, t ngth exceeds mes almost ze maximum forc ens. All spec ling temperat 0.06 0 40°C 100°C 150°C (annealing tem d maximum f maximum for ) 21-28; DOI: 10 used to mea the measured the value a1 ero again. ce. cimens have tures vary bet 0.07 mperatures). force. For sp rce is about 3 0.3221/IGF-ESIS. asure the reac d force conve 1 the stable c no further tween 40 °C pecimens with 35 % higher t 15.03 25 ction erges rack pre- and h no than http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it K. V 26 In in dur ref pla five sam For wit for RE wa neg Th coe Bas the par A h me sur Ap spe act sam tem T Vogel et alii, Fra addition to th the introduct ration of the ference specim asma (N2-plas e minutes. Th mples vary be r specimens w thout any pla r oxygen plasm ESULTS he varia therefor By keep fers (Si-Si geo gligible variati he variation of efficients. So sed on the ge e fracture tou rameters of th heat treatmen easured maxim rfaces of the w pplying the sa ecimens is hig tivated specim mples with an mperatures. T attura ed Integrit he heat treatm tion, the surf plasma treat mens have n sma) have bee he annealing etween 1.38 N m ea su re d fo rc e [N ] with plasma a asma activatio ma. ation of geom re to different ping the struc ometry 2) ins ion of Y() c f the wafer h the values of eometry, the m ughness can he manufactu nt at higher t mum force a wafers, either ame annealing gher than the mens varies fo n annealing tà Strutturale, 15 ment, the infl face activatio tment can als no plasma ac en taken into temperature N and 4.26 N, 0.00 0 0 1 2 3 4 5 Figure 6: F activation, th on. The maxim metries and bo t fracture tou cture height h tead of a sam can be observ height leads to f Y() decreas minima of the be determin uring process. temperatures and the fractu r in oxygen or g temperature e one of sam or different a temperature 5 (2011) 21-28; luence of the on can be car so vary. Thre ctivation. Mo account. The of 100 °C w , Fig. 6. 0.02 0.04 applie Force displacem e measured m mum forces ond paramete ughness. hS constant, a mple consistin ved, Fig. 7. o a significant se with increa e stress inten ned. Using th . Smaller frac leads to hig ure toughnes r nitrogen pla e, the maxim mples with any annealing tem of 40 °C is ; DOI: 10.3221/IG pre-treatmen rried out usin ee different p reover, plasm e duration for was the same 4 0.06 ed displaceme ment curves fo maximum for for samples a ers leads to di and changing ng of an unstr t deviation be asing wafer he sity coefficien he same geo cture toughne gher maximum ss of the spec asma, before b mum force an y other pre-t mperatures. Fu much highe GF-ESIS.15.03 nt has to be c ng different pre-treatments ma activation r the plasma t for all three s 0.08 0 ent [mm] or different pre rces are appro activated in n ifferent functi g the position ructured and etween the fu eight. nt and the ma ometries the esses can be o m forces and cimens can b bonding, Fig. d therefore t treatment. Th urthermore, t er than the o characterised plasmas and s are compar ns in oxygen treatment for stacks, too. T 0.10 0.12 reference oxygen plasm nitrogen plasm -treatments. oximately thr nitrogen plasm ions for the s n of the struc a structured c unctions and aximum force fracture toug observed for l d also to high be significantl . 8. the fracture to he deviation b the fracture t one of non-a as well. As al different pro red in the pre (O2-plasma) r the activated The maximum 2 ma ma ee times high ma are a little stress intensit cture by usin chip (Si-Si ge minima of th e recorded du ghness only lower anneali her fracture t ly increased oughness of between oxyg toughness of activated spec lready mentio ocess gases. esent paper. and in nitro d stacks was b m forces of th her than the o e bit smaller t ty coefficient ng two structu ometry 1), on he stress inten uring experim depends on ing temperatu toughnesses. by activating oxygen activ gen and nitro plasma activ cimens at hig oned The The ogen both hese once than and ured nly a nsity ment, the ures. The g the vated ogen vated gher http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it CO act of b T ONCLUSION he comp the influ treatmen tivated wafers bonding stren T st re ss in te ns ity co ef fic ie nt Y ( ) Figure 7: E NS pliance meth uence of the s nt and the b s during the m ngth. 0.0 50 60 70 80 90 100 st re ss in te ns ity c oe ffi ci en t Y ( ) Estimation of 0 0 1 2 3 4 5 6 m ax im um fo rc e [N ] Figure 8: M od is a suitab specimen geo bonding temp manufacturin K. Vogel et 0.1 0 r dimensionless 50 40 ann Maximum forc ble approach ometry is con perature itself ng process lea alii, Frattura ed .2 0.3 relative crack MIN s stress intensit 100 nealing tempe non-activate oxygen acti nitrogen act ces for differen to estimate nsidered durin f directly affe ads to signific d Integrità Struttu 0.4 length  Si-Si geom Si-Si geom ty coefficient a 0 1 erature [°C] ed vated tivated nt pre and heat the fracture t ng the calcula ect the measu cantly reduced turale, 15 (2011) 0.5 metry 1 metry 2 as a function of 150 Anne treatments. toughness of ation of stress ured maximu d annealing t ) 21-28; DOI: 10 0.6 f geometry. ealing [°C] f direct bond s intensity coe um force. Th temperatures 0.3221/IGF-ESIS. ed wafers. W efficient, the he use of pla without any 15.03 27 While pre- asma loss http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it K. V 28 Cu the dep RE [1] [2] [3] [4] [5] [6] [7] [8] [9] [10 Vogel et alii, Fra urrently, the s e results of t pending on th EFERENCES G. Gerlach, M. Wiemer B. Michel, R M. Wiemer, D. Wuensch Q. Tong, U M. Wiemer 682E (2001 A. Ploessl, G T. Suni, Di (2006). J. Bagdahn, 0] D. Munz, R attura ed Integrit stress intensit the complian he applied loa S , W. Doetzel: r, J. Froemel, R. Aschenbre , J. Froemel, M h, B. Mueller, U. Goesele, Se , T. Otto, T. ). G. Kraeuter, irect wafer b A. Ploessl, M R.T. Bubsey, J tà Strutturale, 15 ty coefficient nce method. ad will be carr Introduction T. Gessner, enner, (2004) M. Haubold, , M. Wiemer, emiconductor Gessner, K. Materials Sci bonding for M. Wiemer, M J.E. Srawley, I 5 (2011) 21-28; is calculated In addition t ried out in fu n to microsys T. Otto, In: T 307. C. Jia, D. Wu , T. Gessner, r wafer bondi Hiller, K. Ka ence and Eng MEMS and M. Petzold, El Int. J. of Frac ; DOI: 10.3221/IG d using anoth to the nume uture. tem technolo The World o uensch, T. Ge H. Mischke, ing, John Wile apser, H. Seid gineering, R2 microelectro lectrochemica cture, 16(4) (1 GF-ESIS.15.03 her numeric a eric calculatio ogy. John Wil of Electronic essner, ECS T In: MNI Pro ey & Sons, Lt del, J. Bagdah 5 (1999) 1. onics, PhD th al Society, (20 1980) 359. approach, the ons the meas ley & Sons, L Packaging an Transactions, ceedings, Da td., New Yor hn, M. Petzol hesis, Helsink 001) 218. e energy relea surement of Ltd., (2008). nd System In , 16(8) (2008) rmstadt, (201 rk, (1999). d, Materials R ki University ase rate, to ve the crack len tegration, Ed 81. 10) 66. Research Soc y of Technol erify ngth d. by ciety, logy, http://dx.medra.org/10.3221/IGF-ESIS.15.03&auth=true http://www.gruppofrattura.it << /ASCII85EncodePages false /AllowTransparency false /AutoPositionEPSFiles true /AutoRotatePages /None /Binding /Left /CalGrayProfile (Dot Gain 20%) /CalRGBProfile (sRGB IEC61966-2.1) /CalCMYKProfile (U.S. Web Coated \050SWOP\051 v2) /sRGBProfile (sRGB IEC61966-2.1) /CannotEmbedFontPolicy /Error /CompatibilityLevel 1.4 /CompressObjects /Tags /CompressPages true /ConvertImagesToIndexed true /PassThroughJPEGImages true /CreateJobTicket false /DefaultRenderingIntent /Default /DetectBlends true /DetectCurves 0.0000 /ColorConversionStrategy /CMYK /DoThumbnails false /EmbedAllFonts true /EmbedOpenType false /ParseICCProfilesInComments true /EmbedJobOptions true /DSCReportingLevel 0 /EmitDSCWarnings false /EndPage -1 /ImageMemory 1048576 /LockDistillerParams false /MaxSubsetPct 100 /Optimize true /OPM 1 /ParseDSCComments true /ParseDSCCommentsForDocInfo true /PreserveCopyPage true /PreserveDICMYKValues true /PreserveEPSInfo true /PreserveFlatness true /PreserveHalftoneInfo false /PreserveOPIComments true /PreserveOverprintSettings true /StartPage 1 /SubsetFonts true /TransferFunctionInfo /Apply /UCRandBGInfo /Preserve /UsePrologue false /ColorSettingsFile () /AlwaysEmbed [ true ] /NeverEmbed [ true ] /AntiAliasColorImages false /CropColorImages true /ColorImageMinResolution 300 /ColorImageMinResolutionPolicy /OK /DownsampleColorImages true /ColorImageDownsampleType /Bicubic /ColorImageResolution 300 /ColorImageDepth -1 /ColorImageMinDownsampleDepth 1 /ColorImageDownsampleThreshold 1.50000 /EncodeColorImages true /ColorImageFilter /DCTEncode /AutoFilterColorImages true /ColorImageAutoFilterStrategy /JPEG /ColorACSImageDict << /QFactor 0.15 /HSamples [1 1 1 1] /VSamples [1 1 1 1] >> /ColorImageDict << /QFactor 0.15 /HSamples [1 1 1 1] /VSamples [1 1 1 1] >> /JPEG2000ColorACSImageDict << /TileWidth 256 /TileHeight 256 /Quality 30 >> /JPEG2000ColorImageDict << /TileWidth 256 /TileHeight 256 /Quality 30 >> /AntiAliasGrayImages false /CropGrayImages true /GrayImageMinResolution 300 /GrayImageMinResolutionPolicy /OK /DownsampleGrayImages true /GrayImageDownsampleType /Bicubic /GrayImageResolution 300 /GrayImageDepth -1 /GrayImageMinDownsampleDepth 2 /GrayImageDownsampleThreshold 1.50000 /EncodeGrayImages true /GrayImageFilter /DCTEncode /AutoFilterGrayImages true /GrayImageAutoFilterStrategy /JPEG /GrayACSImageDict << /QFactor 0.15 /HSamples [1 1 1 1] /VSamples [1 1 1 1] >> /GrayImageDict << /QFactor 0.15 /HSamples [1 1 1 1] /VSamples [1 1 1 1] >> /JPEG2000GrayACSImageDict << /TileWidth 256 /TileHeight 256 /Quality 30 >> /JPEG2000GrayImageDict << /TileWidth 256 /TileHeight 256 /Quality 30 >> /AntiAliasMonoImages false /CropMonoImages true /MonoImageMinResolution 1200 /MonoImageMinResolutionPolicy /OK /DownsampleMonoImages true /MonoImageDownsampleType /Bicubic /MonoImageResolution 1200 /MonoImageDepth -1 /MonoImageDownsampleThreshold 1.50000 /EncodeMonoImages true /MonoImageFilter /CCITTFaxEncode /MonoImageDict << /K -1 >> /AllowPSXObjects false /CheckCompliance [ /None ] /PDFX1aCheck false /PDFX3Check false /PDFXCompliantPDFOnly false /PDFXNoTrimBoxError true /PDFXTrimBoxToMediaBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXSetBleedBoxToMediaBox true /PDFXBleedBoxToTrimBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXOutputIntentProfile () /PDFXOutputConditionIdentifier () /PDFXOutputCondition () /PDFXRegistryName () /PDFXTrapped /False /CreateJDFFile false /Description << /ARA /BGR /CHS /CHT /CZE /DAN /DEU /ESP /ETI /FRA /GRE /HEB /HRV (Za stvaranje Adobe PDF dokumenata najpogodnijih za visokokvalitetni ispis prije tiskanja koristite ove postavke. 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