id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
gs-1113	Kurashvili, Ia ; Kimeridze, Tornike ; Chubinidze, Giorgi ; Gogolashvili, Nargiza ; Darsavelidze, Giorgi 	Electrophysical Properties of Monocrystalline n-Si+0.4at%Ge:P Alloy irradiated by 60Co Gamma Photons 	2022	6	.pdf	application/pdf	2447	116	48	Following temperature changes of the electrophysical properties up to the temperature of 400°C are carried out under the p-type conductivity of the sample. Temperature changes of current carriers mobility in the isochronal annealing process of n-Si + 0.4 at% Ge: P irradiated by 60Co gamma-photons In the test sample, which is a solid solution of low-content germanium SiGe, peculiar changes in the mobility of electrons and holes are expected, which may be one of the main reasons for the n-p conversion.	cache/gs-1113.pdf	txt/gs-1113.txt