id	sid	eid	entity	type
gs-1180	1	1	microsoft	ORG
gs-1180	1	2	fullpdf04042022	GPE
gs-1180	1	3	მეცნიერები	GPE
gs-1180	1	4	4	CARDINAL
gs-1180	1	5	2022	CARDINAL
gs-1180	1	6	georgian	NORP
gs-1180	1	7	მეცნიერები	GPE
gs-1180	1	8	4	CARDINAL
gs-1180	1	9	4	CARDINAL
gs-1180	1	10	ia kurashvili1	PERSON
gs-1180	1	11	tornike kimeridze1,2	GPE
gs-1180	1	12	kakhaber shamatava1	GPE
gs-1180	1	13	sichinava1	ORG
gs-1180	1	14	darsavelidze1	PERSON
gs-1180	1	15	1	CARDINAL
gs-1180	1	16	ilia vekua sukhumi institute of physics and	ORG
gs-1180	1	17	2	CARDINAL
gs-1180	1	18	david aghmashenebeli national defence academy	ORG
gs-1180	1	19	georgia	GPE
gs-1180	1	20	60co	CARDINAL
gs-1180	3	1	20-minute	TIME
gs-1180	3	2	20-400°	TIME
gs-1180	4	1	ge	ORG
gs-1180	8	1	ge	ORG
gs-1180	10	1	si-ge	ORG
gs-1180	11	1	si-ge	ORG
gs-1180	12	1	georgian	NORP
gs-1180	12	2	მეცნიერები	GPE
gs-1180	12	3	4	CARDINAL
gs-1180	12	4	2022 324	CARDINAL
gs-1180	13	1	si	ORG
gs-1180	13	2	ge semiconductors	ORG
gs-1180	13	3	si-ge	ORG
gs-1180	17	1	ge	ORG
gs-1180	17	2	≃4	GPE
gs-1180	18	1	ge	ORG
gs-1180	18	2	si-ge	ORG
gs-1180	20	1	ge-doped si crystalline lattice	ORG
gs-1180	20	2	1	CARDINAL
gs-1180	21	1	ge	ORG
gs-1180	21	2	2,3	CARDINAL
gs-1180	22	1	si-ge	ORG
gs-1180	22	2	ge	ORG
gs-1180	22	3	20-400°	QUANTITY
gs-1180	23	1	111	CARDINAL
gs-1180	24	1	0.8–1.0 mm	QUANTITY
gs-1180	25	1	60co	ORDINAL
gs-1180	25	2	5·1016	CARDINAL
gs-1180	25	3	~50	ORG
gs-1180	26	1	metallographic	PERSON
gs-1180	27	1	0.5	CARDINAL
gs-1180	27	2	hms-3000	DATE
gs-1180	28	1	20-400°	QUANTITY
gs-1180	28	2	10-4 torr	QUANTITY
gs-1180	29	1	15 min	DATE
gs-1180	29	2	20°	QUANTITY
gs-1180	31	1	1	CARDINAL
gs-1180	32	1	georgian	NORP
gs-1180	32	2	მეცნიერები	GPE
gs-1180	32	3	4	CARDINAL
gs-1180	32	4	2022	CARDINAL
gs-1180	32	5	50	CARDINAL
gs-1180	32	6	400	CARDINAL
gs-1180	32	7	450	CARDINAL
gs-1180	32	8	120	CARDINAL
gs-1180	32	9	tiv ity	PERSON
gs-1180	32	10	irrad	PERSON
gs-1180	33	1	irrad	PERSON
gs-1180	34	1	n-si+4 .%ge:p	ORG
gs-1180	35	1	20-400°	QUANTITY
gs-1180	35	2	60co	CARDINAL
gs-1180	36	1	120°	QUANTITY
gs-1180	37	1	120	CARDINAL
gs-1180	41	1	ge	ORG
gs-1180	42	1	100	CARDINAL
gs-1180	43	1	20	CARDINAL
gs-1180	43	2	one	CARDINAL
gs-1180	44	1	second	ORDINAL
gs-1180	45	1	200°	QUANTITY
gs-1180	46	1	ge	ORG
gs-1180	47	1	40-50°	QUANTITY
gs-1180	47	2	≈1014 cm-3	ORG
gs-1180	48	1	ge	ORG
gs-1180	48	2	~15%	PERCENT
gs-1180	50	1	200°	QUANTITY
gs-1180	51	1	ge	ORG
gs-1180	51	2	georgian	NORP
gs-1180	51	3	მეცნიერები	GPE
gs-1180	51	4	4	CARDINAL
gs-1180	51	5	2022 326	CARDINAL
gs-1180	52	1	ge	ORG
gs-1180	53	1	sample(fig	GPE
gs-1180	54	1	2	CARDINAL
gs-1180	55	1	two	CARDINAL
gs-1180	55	2	up to	QUANTITY
gs-1180	55	3	80°	QUANTITY
gs-1180	57	1	120-200°	QUANTITY
gs-1180	58	1	50	CARDINAL
gs-1180	58	2	450	CARDINAL
gs-1180	58	3	20	CARDINAL
gs-1180	58	4	o	DATE
gs-1180	58	5	nc	GPE
gs-1180	58	6	irrad	PERSON
gs-1180	59	1	irrad	PERSON
gs-1180	60	1	n-si+4	ORG
gs-1180	61	1	2	CARDINAL
gs-1180	61	2	20-400°	QUANTITY
gs-1180	61	3	60co	CARDINAL
gs-1180	63	1	100-220°	QUANTITY
gs-1180	69	1	250-400°	QUANTITY
gs-1180	70	1	georgian	NORP
gs-1180	70	2	მეცნიერები	GPE
gs-1180	70	3	4	CARDINAL
gs-1180	70	4	2022 327	CARDINAL
gs-1180	70	5	60co	CARDINAL
gs-1180	70	6	20-400°	QUANTITY
gs-1180	71	1	3	CARDINAL
gs-1180	72	1	50	CARDINAL
gs-1180	72	2	450	CARDINAL
gs-1180	72	3	0	CARDINAL
gs-1180	72	4	15	CARDINAL
gs-1180	72	5	10 2	CARDINAL
gs-1180	73	1	irrad	PERSON
gs-1180	74	1	irrad	PERSON
gs-1180	75	1	n-si+4	ORG
gs-1180	76	1	3	CARDINAL
gs-1180	76	2	20400	CARDINAL
gs-1180	76	3	60co	CARDINAL
gs-1180	80	1	80°	QUANTITY
gs-1180	81	1	100-200°	QUANTITY
gs-1180	82	1	first	ORDINAL
gs-1180	82	2	ge	ORG
gs-1180	84	1	ge	ORG
gs-1180	86	1	200°	QUANTITY
gs-1180	87	1	ge	ORG
gs-1180	88	1	first	ORDINAL
gs-1180	91	1	n-sige	ORG
gs-1180	91	2	ge	ORG
gs-1180	91	3	at.%ge	PERSON
gs-1180	91	4	1013–1014cm-3	CARDINAL
gs-1180	92	1	georgian	NORP
gs-1180	92	2	მეცნიერები	GPE
gs-1180	92	3	4	CARDINAL
gs-1180	92	4	2022 328	CARDINAL
gs-1180	92	5	150 and 300°	QUANTITY
gs-1180	92	6	two	CARDINAL
gs-1180	92	7	cics	ORG
gs-1180	92	8	350°	QUANTITY
gs-1180	94	1	1	CARDINAL
gs-1180	94	2	londos	ORG
gs-1180	94	3	c. a.	PERSON
gs-1180	94	4	sgourou e. n.	PERSON
gs-1180	94	5	d.	NORP
gs-1180	94	6	chroneos a.	PERSON
gs-1180	94	7	j. mater sci:	PERSON
gs-1180	94	8	2014	DATE
gs-1180	95	1	2.	CARDINAL
gs-1180	95	2	londos	ORG
gs-1180	95	3	c.a.	GPE
gs-1180	95	4	andrianakis a.	PERSON
gs-1180	95	5	emtsev v.	PERSON
gs-1180	95	6	ohyama h.	ORG
gs-1180	95	7	semicond	PERSON
gs-1180	96	1	sci	ORG
gs-1180	96	2	technol	PERSON
gs-1180	96	3	2009	DATE
gs-1180	96	4	24	CARDINAL
gs-1180	97	1	3	CARDINAL
gs-1180	97	2	chroneos a.	PERSON
gs-1180	97	3	sgourou e. n.	PERSON
gs-1180	97	4	c. a.	PERSON
gs-1180	97	5	2015	DATE
gs-1180	97	6	№ 2	ORG
gs-1180	97	7	1	CARDINAL
gs-1180	97	8	02130616	DATE
gs-1180	98	1	მოწვის	GPE
gs-1180	98	2	n-si+4ატ.%ge:p	ORG
gs-1180	98	3	ყურაშვილი1	GPE
gs-1180	98	4	თორნიკე ქიმერიძე1,2	ORG
gs-1180	98	5	შამათავა1	ORG
gs-1180	98	6	ავთანდილ სიჭინავა1	PERSON
gs-1180	98	7	1 1	CARDINAL
gs-1180	98	8	2	CARDINAL
gs-1180	98	9	სახელობის	ORG
gs-1180	98	10	გავლენა	GPE
gs-1180	98	11	n-si+4ატ.%ge:p	ORG
gs-1180	98	12	მიღებულია	GPE
gs-1180	98	13	მეთოდით არგონის	PERSON
gs-1180	98	14	ელექტროფიზიკური	PERSON
gs-1180	98	15	მაგნიტურ ველში ჰოლის კოეფიციენტის	FAC
gs-1180	98	16	20-400°	TIME
gs-1180	98	17	20-წუთიანი	CARDINAL
gs-1180	98	18	გავლენით	ORG
gs-1180	99	1	დისოციაციის ტემპერატურის	ORG
gs-1180	99	2	ცვლილება	DATE
gs-1180	99	3	sige შენადნობი	PERSON