id	sid	tid	token	lemma	pos
gs-1180	1	1	microsoft	microsoft	PROPN
gs-1180	1	2	word	word	PROPN
gs-1180	1	3	fullpdf04042022	fullpdf04042022	PROPN
gs-1180	1	4	georgian	georgian	PROPN
gs-1180	1	5	scientists/ქართველი	scientists/ქართველი	PROPN
gs-1180	1	6	მეცნიერები	მეცნიერები	NOUN
gs-1180	1	7	ტ.	ტ.	VERB
gs-1180	1	8	4	4	NUM
gs-1180	1	9	n	n	PRON
gs-1180	1	10	3	3	NUM
gs-1180	1	11	,	,	PUNCT
gs-1180	1	12	2022	2022	NUM
gs-1180	1	13	323	323	NUM
gs-1180	1	14	georgian	georgian	PROPN
gs-1180	1	15	scientists	scientist	NOUN
gs-1180	1	16	ქართველი	ქართველი	ADJ
gs-1180	1	17	მეცნიერები	მეცნიერები	PROPN
gs-1180	1	18	vol	vol	NOUN
gs-1180	1	19	.	.	NOUN
gs-1180	1	20	4	4	NUM
gs-1180	1	21	issue	issue	NOUN
gs-1180	1	22	4	4	NUM
gs-1180	1	23	,	,	PUNCT
gs-1180	1	24	2022	2022	NUM
gs-1180	1	25	https://doi.org/10.52340/gs.2022.04.04.36	https://doi.org/10.52340/gs.2022.04.04.36	NUM
gs-1180	1	26	peculiarities	peculiarity	NOUN
gs-1180	1	27	of	of	ADP
gs-1180	1	28	the	the	DET
gs-1180	1	29	radiation	radiation	NOUN
gs-1180	1	30	defects	defect	NOUN
gs-1180	1	31	generation	generation	NOUN
gs-1180	1	32	and	and	CCONJ
gs-1180	1	33	their	their	PRON
gs-1180	1	34	isochronal	isochronal	ADJ
gs-1180	1	35	annealing	annealing	NOUN
gs-1180	1	36	in	in	ADP
gs-1180	1	37	monocrystalline	monocrystalline	ADJ
gs-1180	1	38	n	n	CCONJ
gs-1180	1	39	-	-	PUNCT
gs-1180	1	40	si+4at%ge	si+4at%ge	NOUN
gs-1180	1	41	:p	:p	NOUN
gs-1180	1	42	alloy	alloy	NOUN
gs-1180	1	43	ia	ia	PROPN
gs-1180	1	44	kurashvili1	kurashvili1	PROPN
gs-1180	1	45	,	,	PUNCT
gs-1180	1	46	tornike	tornike	PROPN
gs-1180	1	47	kimeridze1,2	kimeridze1,2	PROPN
gs-1180	1	48	,	,	PUNCT
gs-1180	1	49	kakhaber	kakhaber	PROPN
gs-1180	1	50	shamatava1	shamatava1	PROPN
gs-1180	1	51	,	,	PUNCT
gs-1180	1	52	avtandil	avtandil	PROPN
gs-1180	1	53	sichinava1	sichinava1	PROPN
gs-1180	1	54	,	,	PUNCT
gs-1180	1	55	giorgi	giorgi	PROPN
gs-1180	1	56	darsavelidze1	darsavelidze1	PROPN
gs-1180	1	57	1	1	NUM
gs-1180	1	58	lepl	lepl	PROPN
gs-1180	1	59	ilia	ilia	PROPN
gs-1180	1	60	vekua	vekua	PROPN
gs-1180	1	61	sukhumi	sukhumi	PROPN
gs-1180	1	62	institute	institute	PROPN
gs-1180	1	63	of	of	ADP
gs-1180	1	64	physics	physics	PROPN
gs-1180	1	65	and	and	CCONJ
gs-1180	1	66	technology	technology	NOUN
gs-1180	1	67	2	2	NUM
gs-1180	1	68	lepl	lepl	PROPN
gs-1180	1	69	david	david	PROPN
gs-1180	1	70	aghmashenebeli	aghmashenebeli	PROPN
gs-1180	1	71	national	national	PROPN
gs-1180	1	72	defence	defence	PROPN
gs-1180	1	73	academy	academy	PROPN
gs-1180	1	74	of	of	ADP
gs-1180	1	75	georgia	georgia	PROPN
gs-1180	1	76	abstract	abstract	PROPN
gs-1180	1	77	the	the	DET
gs-1180	1	78	effect	effect	NOUN
gs-1180	1	79	of	of	ADP
gs-1180	1	80	60co	60co	ADJ
gs-1180	1	81	gamma	gamma	NOUN
gs-1180	1	82	–	–	PUNCT
gs-1180	1	83	photon	photon	NOUN
gs-1180	1	84	irradiation	irradiation	NOUN
gs-1180	1	85	on	on	ADP
gs-1180	1	86	the	the	DET
gs-1180	1	87	radiation	radiation	NOUN
gs-1180	1	88	defects	defect	NOUN
gs-1180	1	89	generation	generation	NOUN
gs-1180	1	90	and	and	CCONJ
gs-1180	1	91	their	their	PRON
gs-1180	1	92	isochronal	isochronal	ADJ
gs-1180	1	93	annealing	annealing	NOUN
gs-1180	1	94	in	in	ADP
gs-1180	1	95	monocrystalline	monocrystalline	ADJ
gs-1180	1	96	n	n	CCONJ
gs-1180	1	97	-	-	PUNCT
gs-1180	1	98	si+4at%ge	si+4at%ge	NOUN
gs-1180	1	99	:p	:p	NOUN
gs-1180	1	100	alloy	alloy	NOUN
gs-1180	1	101	has	have	AUX
gs-1180	1	102	been	be	AUX
gs-1180	1	103	studied	study	VERB
gs-1180	1	104	.	.	PUNCT
gs-1180	2	1	experimental	experimental	ADJ
gs-1180	2	2	bulk	bulk	ADJ
gs-1180	2	3	crystals	crystal	NOUN
gs-1180	2	4	were	be	AUX
gs-1180	2	5	grown	grow	VERB
gs-1180	2	6	by	by	ADP
gs-1180	2	7	czochralski	czochralski	NOUN
gs-1180	2	8	method	method	NOUN
gs-1180	2	9	in	in	ADP
gs-1180	2	10	ar	ar	PROPN
gs-1180	2	11	atmosphere	atmosphere	NOUN
gs-1180	2	12	.	.	PUNCT
gs-1180	3	1	electrophysical	electrophysical	ADJ
gs-1180	3	2	characteristics	characteristic	NOUN
gs-1180	3	3	were	be	AUX
gs-1180	3	4	determined	determine	VERB
gs-1180	3	5	by	by	ADP
gs-1180	3	6	the	the	DET
gs-1180	3	7	hall	hall	NOUN
gs-1180	3	8	effect	effect	NOUN
gs-1180	3	9	measuring	measure	VERB
gs-1180	3	10	in	in	ADP
gs-1180	3	11	a	a	DET
gs-1180	3	12	constant	constant	ADJ
gs-1180	3	13	magnetic	magnetic	ADJ
gs-1180	3	14	field	field	NOUN
gs-1180	3	15	at	at	ADP
gs-1180	3	16	different	different	ADJ
gs-1180	3	17	stages	stage	NOUN
gs-1180	3	18	of	of	ADP
gs-1180	3	19	20	20	NUM
gs-1180	3	20	-	-	PUNCT
gs-1180	3	21	minute	minute	NOUN
gs-1180	3	22	isochronal	isochronal	ADJ
gs-1180	3	23	annealing	annealing	NOUN
gs-1180	3	24	in	in	ADP
gs-1180	3	25	20	20	NUM
gs-1180	3	26	-	-	SYM
gs-1180	3	27	400	400	NUM
gs-1180	3	28	°	°	NOUN
gs-1180	3	29	c	c	NOUN
gs-1180	3	30	temperature	temperature	NOUN
gs-1180	3	31	interval	interval	NOUN
gs-1180	3	32	.	.	PUNCT
gs-1180	4	1	it	it	PRON
gs-1180	4	2	is	be	AUX
gs-1180	4	3	established	establish	VERB
gs-1180	4	4	,	,	PUNCT
gs-1180	4	5	that	that	SCONJ
gs-1180	4	6	under	under	ADP
gs-1180	4	7	the	the	DET
gs-1180	4	8	influence	influence	NOUN
gs-1180	4	9	of	of	ADP
gs-1180	4	10	compressive	compressive	ADJ
gs-1180	4	11	stresses	stress	NOUN
gs-1180	4	12	localized	localize	VERB
gs-1180	4	13	near	near	ADP
gs-1180	4	14	ge	ge	PROPN
gs-1180	4	15	atoms	atom	NOUN
gs-1180	4	16	in	in	ADP
gs-1180	4	17	the	the	DET
gs-1180	4	18	crystalline	crystalline	ADJ
gs-1180	4	19	lattice	lattice	NOUN
gs-1180	4	20	of	of	ADP
gs-1180	4	21	the	the	DET
gs-1180	4	22	experimental	experimental	ADJ
gs-1180	4	23	sige	sige	ADJ
gs-1180	4	24	alloy	alloy	NOUN
gs-1180	4	25	decrease	decrease	NOUN
gs-1180	4	26	of	of	ADP
gs-1180	4	27	the	the	DET
gs-1180	4	28	annealing	anneal	VERB
gs-1180	4	29	temperature	temperature	NOUN
gs-1180	4	30	of	of	ADP
gs-1180	4	31	radiation	radiation	NOUN
gs-1180	4	32	a	a	DET
gs-1180	4	33	-	-	PUNCT
gs-1180	4	34	centers	center	NOUN
gs-1180	4	35	(	(	PUNCT
gs-1180	4	36	vo	vo	NOUN
gs-1180	4	37	)	)	PUNCT
gs-1180	4	38	takes	take	VERB
gs-1180	4	39	place	place	NOUN
gs-1180	4	40	.	.	PUNCT
gs-1180	5	1	a	a	DET
gs-1180	5	2	change	change	NOUN
gs-1180	5	3	in	in	ADP
gs-1180	5	4	dissociation	dissociation	NOUN
gs-1180	5	5	temperature	temperature	NOUN
gs-1180	5	6	of	of	ADP
gs-1180	5	7	radiation	radiation	NOUN
gs-1180	5	8	e	e	NOUN
gs-1180	5	9	-	-	NOUN
gs-1180	5	10	centers	center	NOUN
gs-1180	5	11	(	(	PUNCT
gs-1180	5	12	pv	pv	NOUN
gs-1180	5	13	)	)	PUNCT
gs-1180	5	14	is	be	AUX
gs-1180	5	15	revealed	reveal	VERB
gs-1180	5	16	,	,	PUNCT
gs-1180	5	17	stipulated	stipulate	VERB
gs-1180	5	18	by	by	ADP
gs-1180	5	19	their	their	PRON
gs-1180	5	20	directed	direct	VERB
gs-1180	5	21	migration	migration	NOUN
gs-1180	5	22	in	in	ADP
gs-1180	5	23	the	the	DET
gs-1180	5	24	stress	stress	NOUN
gs-1180	5	25	field	field	NOUN
gs-1180	5	26	localized	localize	VERB
gs-1180	5	27	near	near	ADP
gs-1180	5	28	dislocation	dislocation	NOUN
gs-1180	5	29	.	.	PUNCT
gs-1180	6	1	keywords	keyword	NOUN
gs-1180	6	2	:	:	PUNCT
gs-1180	6	3	sige	sige	ADJ
gs-1180	6	4	alloy	alloy	NOUN
gs-1180	6	5	,	,	PUNCT
gs-1180	6	6	radiation	radiation	NOUN
gs-1180	6	7	defect	defect	NOUN
gs-1180	6	8	,	,	PUNCT
gs-1180	6	9	gamma	gamma	NOUN
gs-1180	6	10	-	-	PUNCT
gs-1180	6	11	photons	photon	NOUN
gs-1180	6	12	,	,	PUNCT
gs-1180	6	13	isochronal	isochronal	ADJ
gs-1180	6	14	annealing	annealing	NOUN
gs-1180	6	15	.	.	PUNCT
gs-1180	7	1	introduction	introduction	NOUN
gs-1180	7	2	silicon	silicon	NOUN
gs-1180	7	3	-	-	PUNCT
gs-1180	7	4	germanium	germanium	NOUN
gs-1180	7	5	system	system	NOUN
gs-1180	7	6	alloys	alloy	NOUN
gs-1180	7	7	are	be	AUX
gs-1180	7	8	promising	promise	VERB
gs-1180	7	9	materials	material	NOUN
gs-1180	7	10	for	for	ADP
gs-1180	7	11	use	use	NOUN
gs-1180	7	12	in	in	ADP
gs-1180	7	13	modern	modern	ADJ
gs-1180	7	14	semiconductor	semiconductor	NOUN
gs-1180	7	15	device	device	NOUN
gs-1180	7	16	technology	technology	NOUN
gs-1180	7	17	.	.	PUNCT
gs-1180	8	1	the	the	DET
gs-1180	8	2	interest	interest	NOUN
gs-1180	8	3	in	in	ADP
gs-1180	8	4	these	these	DET
gs-1180	8	5	materials	material	NOUN
gs-1180	8	6	is	be	AUX
gs-1180	8	7	enhanced	enhance	VERB
gs-1180	8	8	by	by	ADP
gs-1180	8	9	the	the	DET
gs-1180	8	10	possibility	possibility	NOUN
gs-1180	8	11	of	of	ADP
gs-1180	8	12	smooth	smooth	ADJ
gs-1180	8	13	variation	variation	NOUN
gs-1180	8	14	of	of	ADP
gs-1180	8	15	the	the	DET
gs-1180	8	16	crystal	crystal	PROPN
gs-1180	8	17	lattice	lattice	PROPN
gs-1180	8	18	parameter	parameter	NOUN
gs-1180	8	19	and	and	CCONJ
gs-1180	8	20	the	the	DET
gs-1180	8	21	width	width	NOUN
gs-1180	8	22	of	of	ADP
gs-1180	8	23	energy	energy	NOUN
gs-1180	8	24	band	band	NOUN
gs-1180	8	25	gap	gap	NOUN
gs-1180	8	26	under	under	ADP
gs-1180	8	27	conditions	condition	NOUN
gs-1180	8	28	of	of	ADP
gs-1180	8	29	changing	change	VERB
gs-1180	8	30	si	si	PROPN
gs-1180	8	31	and	and	CCONJ
gs-1180	8	32	ge	ge	PROPN
gs-1180	8	33	content	content	PROPN
gs-1180	8	34	in	in	ADP
gs-1180	8	35	wide	wide	ADJ
gs-1180	8	36	concentration	concentration	NOUN
gs-1180	8	37	ranges	range	NOUN
gs-1180	8	38	.	.	PUNCT
gs-1180	9	1	currently	currently	ADV
gs-1180	9	2	,	,	PUNCT
gs-1180	9	3	highly	highly	ADV
gs-1180	9	4	radiation	radiation	NOUN
gs-1180	9	5	-	-	PUNCT
gs-1180	9	6	resistant	resistant	ADJ
gs-1180	9	7	high	high	ADJ
gs-1180	9	8	-	-	PUNCT
gs-1180	9	9	speed	speed	NOUN
gs-1180	9	10	devices	device	NOUN
gs-1180	9	11	based	base	VERB
gs-1180	9	12	of	of	ADP
gs-1180	9	13	sige	sige	ADJ
gs-1180	9	14	system	system	NOUN
gs-1180	9	15	alloys	alloy	NOUN
gs-1180	9	16	are	be	AUX
gs-1180	9	17	successfully	successfully	ADV
gs-1180	9	18	used	use	VERB
gs-1180	9	19	.	.	PUNCT
gs-1180	10	1	in	in	ADP
gs-1180	10	2	the	the	DET
gs-1180	10	3	world	world	NOUN
gs-1180	10	4	's	's	PART
gs-1180	10	5	leading	lead	VERB
gs-1180	10	6	scientific	scientific	ADJ
gs-1180	10	7	and	and	CCONJ
gs-1180	10	8	technological	technological	ADJ
gs-1180	10	9	centers	center	NOUN
gs-1180	10	10	,	,	PUNCT
gs-1180	10	11	intensive	intensive	ADJ
gs-1180	10	12	work	work	NOUN
gs-1180	10	13	is	be	AUX
gs-1180	10	14	being	be	AUX
gs-1180	10	15	carried	carry	VERB
gs-1180	10	16	out	out	ADP
gs-1180	10	17	to	to	PART
gs-1180	10	18	obtain	obtain	VERB
gs-1180	10	19	si	si	ADJ
gs-1180	10	20	-	-	ADJ
gs-1180	10	21	ge	ge	ADJ
gs-1180	10	22	alloys	alloy	NOUN
gs-1180	10	23	’s	’s	PART
gs-1180	10	24	bulk	bulk	ADJ
gs-1180	10	25	monocrystals	monocrystal	NOUN
gs-1180	10	26	and	and	CCONJ
gs-1180	10	27	epitaxial	epitaxial	ADJ
gs-1180	10	28	structures	structure	NOUN
gs-1180	10	29	of	of	ADP
gs-1180	10	30	a	a	DET
gs-1180	10	31	perfect	perfect	ADJ
gs-1180	10	32	structure	structure	NOUN
gs-1180	10	33	and	and	CCONJ
gs-1180	10	34	controlled	control	VERB
gs-1180	10	35	composition	composition	NOUN
gs-1180	10	36	.	.	PUNCT
gs-1180	11	1	complex	complex	ADJ
gs-1180	11	2	research	research	NOUN
gs-1180	11	3	of	of	ADP
gs-1180	11	4	technological	technological	ADJ
gs-1180	11	5	origin	origin	NOUN
gs-1180	11	6	and	and	CCONJ
gs-1180	11	7	special	special	ADJ
gs-1180	11	8	processing	processing	NOUN
gs-1180	11	9	defects	defect	NOUN
gs-1180	11	10	in	in	ADP
gs-1180	11	11	the	the	DET
gs-1180	11	12	real	real	ADJ
gs-1180	11	13	structure	structure	NOUN
gs-1180	11	14	of	of	ADP
gs-1180	11	15	si	si	ADJ
gs-1180	11	16	-	-	ADJ
gs-1180	11	17	ge	ge	PROPN
gs-1180	11	18	alloys	alloy	NOUN
gs-1180	11	19	is	be	AUX
gs-1180	11	20	an	an	DET
gs-1180	11	21	actual	actual	ADJ
gs-1180	11	22	problem	problem	NOUN
gs-1180	11	23	of	of	ADP
gs-1180	11	24	semiconductor	semiconductor	NOUN
gs-1180	11	25	materials	material	NOUN
gs-1180	11	26	science	science	NOUN
gs-1180	11	27	.	.	PUNCT
gs-1180	12	1	by	by	ADP
gs-1180	12	2	gradually	gradually	ADV
gs-1180	12	3	solving	solve	VERB
gs-1180	12	4	this	this	DET
gs-1180	12	5	problem	problem	NOUN
gs-1180	12	6	,	,	PUNCT
gs-1180	12	7	the	the	DET
gs-1180	12	8	georgian	georgian	ADJ
gs-1180	12	9	scientists/ქართველი	scientists/ქართველი	NOUN
gs-1180	12	10	მეცნიერები	მეცნიერები	NOUN
gs-1180	12	11	ტ.	ტ.	VERB
gs-1180	12	12	4	4	NUM
gs-1180	12	13	n	n	PRON
gs-1180	12	14	3	3	NUM
gs-1180	12	15	,	,	PUNCT
gs-1180	12	16	2022	2022	NUM
gs-1180	12	17	324	324	NUM
gs-1180	12	18	possibilities	possibility	NOUN
gs-1180	12	19	of	of	ADP
gs-1180	12	20	using	use	VERB
gs-1180	12	21	semiconductor	semiconductor	NOUN
gs-1180	12	22	si	si	PROPN
gs-1180	12	23	-	-	ADJ
gs-1180	12	24	ge	ge	PROPN
gs-1180	12	25	alloys	alloy	NOUN
gs-1180	12	26	in	in	ADP
gs-1180	12	27	high	high	ADJ
gs-1180	12	28	-	-	PUNCT
gs-1180	12	29	performance	performance	NOUN
gs-1180	12	30	devices	device	NOUN
gs-1180	12	31	and	and	CCONJ
gs-1180	12	32	systems	system	NOUN
gs-1180	12	33	will	will	AUX
gs-1180	12	34	increase	increase	VERB
gs-1180	12	35	significantly	significantly	ADV
gs-1180	12	36	.	.	PUNCT
gs-1180	13	1	unlike	unlike	ADP
gs-1180	13	2	si	si	PROPN
gs-1180	13	3	and	and	CCONJ
gs-1180	13	4	ge	ge	PROPN
gs-1180	13	5	semiconductors	semiconductor	NOUN
gs-1180	13	6	,	,	PUNCT
gs-1180	13	7	the	the	DET
gs-1180	13	8	properties	property	NOUN
gs-1180	13	9	of	of	ADP
gs-1180	13	10	radiation	radiation	NOUN
gs-1180	13	11	,	,	PUNCT
gs-1180	13	12	deformation	deformation	NOUN
gs-1180	13	13	and	and	CCONJ
gs-1180	13	14	thermal	thermal	ADJ
gs-1180	13	15	origin	origin	NOUN
gs-1180	13	16	defects	defect	NOUN
gs-1180	13	17	in	in	ADP
gs-1180	13	18	bulk	bulk	ADJ
gs-1180	13	19	crystals	crystal	NOUN
gs-1180	13	20	of	of	ADP
gs-1180	13	21	si	si	ADJ
gs-1180	13	22	-	-	ADJ
gs-1180	13	23	ge	ge	PROPN
gs-1180	13	24	alloys	alloy	NOUN
gs-1180	13	25	have	have	AUX
gs-1180	13	26	been	be	AUX
gs-1180	13	27	less	less	ADV
gs-1180	13	28	investigated	investigate	VERB
gs-1180	13	29	.	.	PUNCT
gs-1180	14	1	the	the	DET
gs-1180	14	2	study	study	NOUN
gs-1180	14	3	of	of	ADP
gs-1180	14	4	the	the	DET
gs-1180	14	5	conditions	condition	NOUN
gs-1180	14	6	of	of	ADP
gs-1180	14	7	their	their	PRON
gs-1180	14	8	generation	generation	NOUN
gs-1180	14	9	,	,	PUNCT
gs-1180	14	10	thermal	thermal	ADJ
gs-1180	14	11	stability	stability	NOUN
gs-1180	14	12	and	and	CCONJ
gs-1180	14	13	structural	structural	ADJ
gs-1180	14	14	transformation	transformation	NOUN
gs-1180	14	15	has	have	AUX
gs-1180	14	16	been	be	AUX
gs-1180	14	17	mainly	mainly	ADV
gs-1180	14	18	carried	carry	VERB
gs-1180	14	19	out	out	ADP
gs-1180	14	20	by	by	ADP
gs-1180	14	21	optical	optical	ADJ
gs-1180	14	22	spectroscopy	spectroscopy	NOUN
gs-1180	14	23	methods	method	NOUN
gs-1180	14	24	.	.	PUNCT
gs-1180	15	1	despite	despite	SCONJ
gs-1180	15	2	numerous	numerous	ADJ
gs-1180	15	3	publications	publication	NOUN
gs-1180	15	4	,	,	PUNCT
gs-1180	15	5	there	there	PRON
gs-1180	15	6	is	be	VERB
gs-1180	15	7	practically	practically	ADV
gs-1180	15	8	no	no	DET
gs-1180	15	9	information	information	NOUN
gs-1180	15	10	in	in	ADP
gs-1180	15	11	the	the	DET
gs-1180	15	12	scientific	scientific	ADJ
gs-1180	15	13	literature	literature	NOUN
gs-1180	15	14	about	about	ADP
gs-1180	15	15	the	the	DET
gs-1180	15	16	change	change	NOUN
gs-1180	15	17	in	in	ADP
gs-1180	15	18	the	the	DET
gs-1180	15	19	electrophysical	electrophysical	ADJ
gs-1180	15	20	characteristics	characteristic	NOUN
gs-1180	15	21	of	of	ADP
gs-1180	15	22	radiation	radiation	NOUN
gs-1180	15	23	defects	defect	NOUN
gs-1180	15	24	in	in	ADP
gs-1180	15	25	bulk	bulk	ADJ
gs-1180	15	26	si	si	PROPN
gs-1180	15	27	-	-	ADJ
gs-1180	15	28	ge	ge	ADJ
gs-1180	15	29	alloys	alloy	NOUN
gs-1180	15	30	in	in	ADP
gs-1180	15	31	a	a	DET
gs-1180	15	32	wide	wide	ADJ
gs-1180	15	33	range	range	NOUN
gs-1180	15	34	of	of	ADP
gs-1180	15	35	isochronal	isochronal	ADJ
gs-1180	15	36	annealing	anneal	VERB
gs-1180	15	37	temperatures	temperature	NOUN
gs-1180	15	38	.	.	PUNCT
gs-1180	16	1	this	this	DET
gs-1180	16	2	circumstance	circumstance	NOUN
gs-1180	16	3	significantly	significantly	ADV
gs-1180	16	4	hinders	hinder	VERB
gs-1180	16	5	the	the	DET
gs-1180	16	6	study	study	NOUN
gs-1180	16	7	of	of	ADP
gs-1180	16	8	electrical	electrical	ADJ
gs-1180	16	9	activity	activity	NOUN
gs-1180	16	10	and	and	CCONJ
gs-1180	16	11	thermal	thermal	ADJ
gs-1180	16	12	stability	stability	NOUN
gs-1180	16	13	of	of	ADP
gs-1180	16	14	radiation	radiation	NOUN
gs-1180	16	15	defects	defect	NOUN
gs-1180	16	16	formed	form	VERB
gs-1180	16	17	in	in	ADP
gs-1180	16	18	the	the	DET
gs-1180	16	19	crystalline	crystalline	ADJ
gs-1180	16	20	lattice	lattice	NOUN
gs-1180	16	21	of	of	ADP
gs-1180	16	22	sige	sige	ADJ
gs-1180	16	23	alloys	alloy	NOUN
gs-1180	16	24	.	.	PUNCT
gs-1180	17	1	it	it	PRON
gs-1180	17	2	is	be	AUX
gs-1180	17	3	known	know	VERB
gs-1180	17	4	,	,	PUNCT
gs-1180	17	5	that	that	SCONJ
gs-1180	17	6	the	the	DET
gs-1180	17	7	covalent	covalent	ADJ
gs-1180	17	8	radius	radius	NOUN
gs-1180	17	9	of	of	ADP
gs-1180	17	10	the	the	DET
gs-1180	17	11	ge	ge	PROPN
gs-1180	17	12	atom	atom	PROPN
gs-1180	17	13	is	be	AUX
gs-1180	17	14	≃4	≃4	NOUN
gs-1180	17	15	%	%	NOUN
gs-1180	17	16	larger	large	ADJ
gs-1180	17	17	than	than	ADP
gs-1180	17	18	the	the	DET
gs-1180	17	19	covalent	covalent	ADJ
gs-1180	17	20	radius	radius	NOUN
gs-1180	17	21	of	of	ADP
gs-1180	17	22	the	the	DET
gs-1180	17	23	si	si	PROPN
gs-1180	17	24	atom	atom	NOUN
gs-1180	17	25	.	.	PUNCT
gs-1180	18	1	due	due	ADP
gs-1180	18	2	to	to	ADP
gs-1180	18	3	this	this	PRON
gs-1180	18	4	,	,	PUNCT
gs-1180	18	5	a	a	DET
gs-1180	18	6	localized	localize	VERB
gs-1180	18	7	stress	stress	NOUN
gs-1180	18	8	field	field	NOUN
gs-1180	18	9	is	be	AUX
gs-1180	18	10	formed	form	VERB
gs-1180	18	11	near	near	ADP
gs-1180	18	12	the	the	DET
gs-1180	18	13	ge	ge	PROPN
gs-1180	18	14	atoms	atom	NOUN
gs-1180	18	15	in	in	ADP
gs-1180	18	16	the	the	DET
gs-1180	18	17	crystalline	crystalline	ADJ
gs-1180	18	18	lattice	lattice	NOUN
gs-1180	18	19	of	of	ADP
gs-1180	18	20	si	si	ADJ
gs-1180	18	21	-	-	ADJ
gs-1180	18	22	ge	ge	ADJ
gs-1180	18	23	alloys	alloy	NOUN
gs-1180	18	24	.	.	PUNCT
gs-1180	19	1	it	it	PRON
gs-1180	19	2	affects	affect	VERB
gs-1180	19	3	the	the	DET
gs-1180	19	4	conditions	condition	NOUN
gs-1180	19	5	of	of	ADP
gs-1180	19	6	generation	generation	NOUN
gs-1180	19	7	and	and	CCONJ
gs-1180	19	8	interaction	interaction	NOUN
gs-1180	19	9	of	of	ADP
gs-1180	19	10	defects	defect	NOUN
gs-1180	19	11	in	in	ADP
gs-1180	19	12	the	the	DET
gs-1180	19	13	structure	structure	NOUN
gs-1180	19	14	of	of	ADP
gs-1180	19	15	si	si	ADJ
gs-1180	19	16	-	-	ADJ
gs-1180	19	17	ge	ge	ADJ
gs-1180	19	18	alloys	alloy	NOUN
gs-1180	19	19	.	.	PUNCT
gs-1180	20	1	the	the	DET
gs-1180	20	2	mechanisms	mechanism	NOUN
gs-1180	20	3	of	of	ADP
gs-1180	20	4	formation	formation	NOUN
gs-1180	20	5	and	and	CCONJ
gs-1180	20	6	interaction	interaction	NOUN
gs-1180	20	7	of	of	ADP
gs-1180	20	8	different	different	ADJ
gs-1180	20	9	types	type	NOUN
gs-1180	20	10	of	of	ADP
gs-1180	20	11	radiation	radiation	NOUN
gs-1180	20	12	defects	defect	NOUN
gs-1180	20	13	in	in	ADP
gs-1180	20	14	ge	ge	PROPN
gs-1180	20	15	-	-	PUNCT
gs-1180	20	16	doped	dope	VERB
gs-1180	20	17	si	si	PROPN
gs-1180	20	18	crystalline	crystalline	PROPN
gs-1180	20	19	lattice	lattice	PROPN
gs-1180	20	20	,	,	PUNCT
gs-1180	20	21	have	have	AUX
gs-1180	20	22	been	be	AUX
gs-1180	20	23	studied	study	VERB
gs-1180	20	24	using	use	VERB
gs-1180	20	25	optical	optical	ADJ
gs-1180	20	26	spectroscopy	spectroscopy	NOUN
gs-1180	20	27	methods	method	NOUN
gs-1180	20	28	in	in	ADP
gs-1180	20	29	the	the	DET
gs-1180	20	30	infrared	infrared	ADJ
gs-1180	20	31	range	range	NOUN
gs-1180	20	32	of	of	ADP
gs-1180	20	33	irradiation	irradiation	NOUN
gs-1180	20	34	[	[	X
gs-1180	20	35	1	1	NUM
gs-1180	20	36	]	]	PUNCT
gs-1180	20	37	.	.	PUNCT
gs-1180	21	1	it	it	PRON
gs-1180	21	2	is	be	AUX
gs-1180	21	3	established	establish	VERB
gs-1180	21	4	,	,	PUNCT
gs-1180	21	5	that	that	SCONJ
gs-1180	21	6	at	at	ADP
gs-1180	21	7	low	low	ADJ
gs-1180	21	8	concentrations	concentration	NOUN
gs-1180	21	9	,	,	PUNCT
gs-1180	21	10	ge	ge	PROPN
gs-1180	21	11	atoms	atom	NOUN
gs-1180	21	12	inhibit	inhibit	VERB
gs-1180	21	13	the	the	DET
gs-1180	21	14	annihilation	annihilation	NOUN
gs-1180	21	15	of	of	ADP
gs-1180	21	16	vacancy	vacancy	NOUN
gs-1180	21	17	-	-	PUNCT
gs-1180	21	18	interstitial	interstitial	ADJ
gs-1180	21	19	(	(	PUNCT
gs-1180	21	20	sii	sii	ADJ
gs-1180	21	21	)	)	PUNCT
gs-1180	21	22	atoms	atom	NOUN
gs-1180	21	23	,	,	PUNCT
gs-1180	21	24	while	while	SCONJ
gs-1180	21	25	at	at	ADP
gs-1180	21	26	high	high	ADJ
gs-1180	21	27	ge	ge	PROPN
gs-1180	21	28	concentrations	concentration	NOUN
gs-1180	21	29	,	,	PUNCT
gs-1180	21	30	a	a	DET
gs-1180	21	31	tendency	tendency	NOUN
gs-1180	21	32	to	to	PART
gs-1180	21	33	clusters	cluster	NOUN
gs-1180	21	34	formation	formation	NOUN
gs-1180	21	35	is	be	AUX
gs-1180	21	36	revealed	reveal	VERB
gs-1180	21	37	[	[	X
gs-1180	21	38	2,3	2,3	NUM
gs-1180	21	39	]	]	PUNCT
gs-1180	21	40	.	.	PUNCT
gs-1180	22	1	the	the	DET
gs-1180	22	2	aim	aim	NOUN
gs-1180	22	3	of	of	ADP
gs-1180	22	4	the	the	DET
gs-1180	22	5	present	present	ADJ
gs-1180	22	6	work	work	NOUN
gs-1180	22	7	is	be	AUX
gs-1180	22	8	to	to	PART
gs-1180	22	9	study	study	VERB
gs-1180	22	10	the	the	DET
gs-1180	22	11	formation	formation	NOUN
gs-1180	22	12	and	and	CCONJ
gs-1180	22	13	transformation	transformation	NOUN
gs-1180	22	14	processes	process	NOUN
gs-1180	22	15	of	of	ADP
gs-1180	22	16	radiation	radiation	NOUN
gs-1180	22	17	defects	defect	NOUN
gs-1180	22	18	in	in	ADP
gs-1180	22	19	the	the	DET
gs-1180	22	20	n	n	CCONJ
gs-1180	22	21	-	-	PUNCT
gs-1180	22	22	type	type	NOUN
gs-1180	22	23	monocrystalline	monocrystalline	ADJ
gs-1180	22	24	si	si	PROPN
gs-1180	22	25	-	-	ADJ
gs-1180	22	26	ge	ge	PROPN
gs-1180	22	27	alloy	alloy	NOUN
gs-1180	22	28	with	with	ADP
gs-1180	22	29	a	a	DET
gs-1180	22	30	relatively	relatively	ADV
gs-1180	22	31	high	high	ADJ
gs-1180	22	32	ge	ge	PROPN
gs-1180	22	33	content	content	PROPN
gs-1180	22	34	(	(	PUNCT
gs-1180	22	35	≃4at%	≃4at%	PROPN
gs-1180	22	36	)	)	PUNCT
gs-1180	22	37	in	in	ADP
gs-1180	22	38	the	the	DET
gs-1180	22	39	temperature	temperature	NOUN
gs-1180	22	40	range	range	NOUN
gs-1180	22	41	of	of	ADP
gs-1180	22	42	20	20	NUM
gs-1180	22	43	-	-	SYM
gs-1180	22	44	400	400	NUM
gs-1180	22	45	°	°	NOUN
gs-1180	22	46	c	c	NOUN
gs-1180	22	47	isochronal	isochronal	ADJ
gs-1180	22	48	annealing	annealing	NOUN
gs-1180	22	49	.	.	PUNCT
gs-1180	23	1	research	research	NOUN
gs-1180	23	2	methodology	methodology	NOUN
gs-1180	23	3	the	the	DET
gs-1180	23	4	bulk	bulk	ADJ
gs-1180	23	5	crystal	crystal	NOUN
gs-1180	23	6	of	of	ADP
gs-1180	23	7	n	n	CCONJ
gs-1180	23	8	-	-	PUNCT
gs-1180	23	9	si+4at.%ge	si+4at.%ge	NOUN
gs-1180	23	10	:p	:p	NOUN
gs-1180	23	11	alloy	alloy	NOUN
gs-1180	23	12	was	be	AUX
gs-1180	23	13	obtained	obtain	VERB
gs-1180	23	14	by	by	ADP
gs-1180	23	15	the	the	DET
gs-1180	23	16	chokhralski	chokhralski	NOUN
gs-1180	23	17	method	method	NOUN
gs-1180	23	18	in	in	ADP
gs-1180	23	19	an	an	DET
gs-1180	23	20	argon	argon	NOUN
gs-1180	23	21	atmosphere	atmosphere	NOUN
gs-1180	23	22	in	in	ADP
gs-1180	23	23	the	the	DET
gs-1180	23	24	[	[	NOUN
gs-1180	23	25	111	111	NUM
gs-1180	23	26	]	]	PUNCT
gs-1180	23	27	crystallographic	crystallographic	ADJ
gs-1180	23	28	direction	direction	NOUN
gs-1180	23	29	.	.	PUNCT
gs-1180	24	1	for	for	ADP
gs-1180	24	2	irradiation	irradiation	NOUN
gs-1180	24	3	and	and	CCONJ
gs-1180	24	4	subsequent	subsequent	ADJ
gs-1180	24	5	microstructural	microstructural	ADJ
gs-1180	24	6	and	and	CCONJ
gs-1180	24	7	electrophysical	electrophysical	ADJ
gs-1180	24	8	studies	study	NOUN
gs-1180	24	9	double	double	ADJ
gs-1180	24	10	-	-	PUNCT
gs-1180	24	11	polished	polished	ADJ
gs-1180	24	12	specimens	specimen	NOUN
gs-1180	24	13	were	be	AUX
gs-1180	24	14	made	make	VERB
gs-1180	24	15	from	from	ADP
gs-1180	24	16	0.8–1.0	0.8–1.0	ADP
gs-1180	24	17	mm	mm	PROPN
gs-1180	24	18	thickness	thickness	NOUN
gs-1180	24	19	plates	plate	NOUN
gs-1180	24	20	.	.	PUNCT
gs-1180	25	1	gamma	gamma	NOUN
gs-1180	25	2	-	-	PUNCT
gs-1180	25	3	irradiation	irradiation	NOUN
gs-1180	25	4	was	be	AUX
gs-1180	25	5	performed	perform	VERB
gs-1180	25	6	from	from	ADP
gs-1180	25	7	a	a	DET
gs-1180	25	8	60co	60co	ADJ
gs-1180	25	9	source	source	NOUN
gs-1180	25	10	with	with	ADP
gs-1180	25	11	a	a	DET
gs-1180	25	12	fluence	fluence	NOUN
gs-1180	25	13	of	of	ADP
gs-1180	25	14	5·1016	5·1016	NUM
gs-1180	25	15	cm-2	cm-2	NOUN
gs-1180	25	16	at	at	ADP
gs-1180	25	17	a	a	DET
gs-1180	25	18	temperature	temperature	NOUN
gs-1180	25	19	of	of	ADP
gs-1180	25	20	~50	~50	NOUN
gs-1180	25	21	°	°	ADP
gs-1180	25	22	c	c	NOUN
gs-1180	25	23	.	.	PUNCT
gs-1180	26	1	metallographic	metallographic	ADJ
gs-1180	26	2	study	study	NOUN
gs-1180	26	3	was	be	AUX
gs-1180	26	4	carried	carry	VERB
gs-1180	26	5	out	out	ADP
gs-1180	26	6	on	on	ADP
gs-1180	26	7	the	the	DET
gs-1180	26	8	optical	optical	ADJ
gs-1180	26	9	microscope	microscope	NOUN
gs-1180	26	10	nmm-80rf	nmm-80rf	NUM
gs-1180	26	11	/	/	SYM
gs-1180	26	12	trt	trt	PROPN
gs-1180	26	13	.	.	PUNCT
gs-1180	27	1	electrophysical	electrophysical	ADJ
gs-1180	27	2	characteristics	characteristic	NOUN
gs-1180	27	3	were	be	AUX
gs-1180	27	4	determined	determine	VERB
gs-1180	27	5	in	in	ADP
gs-1180	27	6	the	the	DET
gs-1180	27	7	constant	constant	ADJ
gs-1180	27	8	magnetic	magnetic	ADJ
gs-1180	27	9	field	field	NOUN
gs-1180	27	10	of	of	ADP
gs-1180	27	11	0.5	0.5	NUM
gs-1180	27	12	tesla	tesla	PROPN
gs-1180	27	13	induction	induction	NOUN
gs-1180	27	14	on	on	ADP
gs-1180	27	15	the	the	DET
gs-1180	27	16	ecopia	ecopia	PROPN
gs-1180	27	17	hms-3000	hms-3000	VERB
gs-1180	27	18	device	device	NOUN
gs-1180	27	19	by	by	ADP
gs-1180	27	20	hall	hall	NOUN
gs-1180	27	21	effect	effect	NOUN
gs-1180	27	22	measurements	measurement	NOUN
gs-1180	27	23	.	.	PUNCT
gs-1180	28	1	isochronal	isochronal	ADJ
gs-1180	28	2	annealings	annealing	NOUN
gs-1180	28	3	in	in	ADP
gs-1180	28	4	the	the	DET
gs-1180	28	5	temperature	temperature	NOUN
gs-1180	28	6	range	range	NOUN
gs-1180	28	7	of	of	ADP
gs-1180	28	8	20	20	NUM
gs-1180	28	9	-	-	SYM
gs-1180	28	10	400	400	NUM
gs-1180	28	11	°	°	NOUN
gs-1180	28	12	c	c	NOUN
gs-1180	28	13	were	be	AUX
gs-1180	28	14	performed	perform	VERB
gs-1180	28	15	in	in	ADP
gs-1180	28	16	a	a	DET
gs-1180	28	17	vacuum	vacuum	NOUN
gs-1180	28	18	of	of	ADP
gs-1180	28	19	10	10	NUM
gs-1180	28	20	-	-	SYM
gs-1180	28	21	4	4	NUM
gs-1180	28	22	torr	torr	NOUN
gs-1180	28	23	.	.	PUNCT
gs-1180	29	1	at	at	ADP
gs-1180	29	2	each	each	DET
gs-1180	29	3	stage	stage	NOUN
gs-1180	29	4	,	,	PUNCT
gs-1180	29	5	the	the	DET
gs-1180	29	6	duration	duration	NOUN
gs-1180	29	7	of	of	ADP
gs-1180	29	8	isochronal	isochronal	ADJ
gs-1180	29	9	annealing	annealing	NOUN
gs-1180	29	10	was	be	AUX
gs-1180	29	11	15	15	NUM
gs-1180	29	12	min	min	NOUN
gs-1180	29	13	,	,	PUNCT
gs-1180	29	14	and	and	CCONJ
gs-1180	29	15	the	the	DET
gs-1180	29	16	temperature	temperature	NOUN
gs-1180	29	17	step	step	NOUN
gs-1180	29	18	was	be	AUX
gs-1180	29	19	20	20	NUM
gs-1180	29	20	°	°	NOUN
gs-1180	29	21	c	c	NOUN
gs-1180	29	22	.	.	PUNCT
gs-1180	30	1	results	result	NOUN
gs-1180	30	2	and	and	CCONJ
gs-1180	30	3	discussion	discussion	NOUN
gs-1180	30	4	changes	change	NOUN
gs-1180	30	5	in	in	ADP
gs-1180	30	6	the	the	DET
gs-1180	30	7	specific	specific	ADJ
gs-1180	30	8	electrical	electrical	ADJ
gs-1180	30	9	resistivity	resistivity	NOUN
gs-1180	30	10	of	of	ADP
gs-1180	30	11	the	the	DET
gs-1180	30	12	test	test	NOUN
gs-1180	30	13	sample	sample	NOUN
gs-1180	30	14	in	in	ADP
gs-1180	30	15	the	the	DET
gs-1180	30	16	temperature	temperature	NOUN
gs-1180	30	17	interval	interval	NOUN
gs-1180	30	18	of	of	ADP
gs-1180	30	19	isochronal	isochronal	ADJ
gs-1180	30	20	annealing	annealing	NOUN
gs-1180	30	21	are	be	AUX
gs-1180	30	22	non	non	ADJ
gs-1180	30	23	-	-	ADJ
gs-1180	30	24	monotonic	monotonic	ADJ
gs-1180	30	25	and	and	CCONJ
gs-1180	30	26	are	be	AUX
gs-1180	30	27	characterized	characterize	VERB
gs-1180	30	28	by	by	ADP
gs-1180	30	29	the	the	DET
gs-1180	30	30	following	follow	VERB
gs-1180	30	31	properties	property	NOUN
gs-1180	30	32	(	(	PUNCT
gs-1180	30	33	fig	fig	NOUN
gs-1180	30	34	.	.	PUNCT
gs-1180	31	1	1	1	NUM
gs-1180	31	2	)	)	PUNCT
gs-1180	31	3	.	.	PUNCT
gs-1180	32	1	georgian	georgian	ADJ
gs-1180	32	2	scientists/ქართველი	scientists/ქართველი	PROPN
gs-1180	32	3	მეცნიერები	მეცნიერები	NOUN
gs-1180	32	4	ტ.	ტ.	VERB
gs-1180	32	5	4	4	NUM
gs-1180	32	6	n	n	PRON
gs-1180	32	7	3	3	NUM
gs-1180	32	8	,	,	PUNCT
gs-1180	32	9	2022	2022	NUM
gs-1180	32	10	325	325	NUM
gs-1180	32	11	0	0	NUM
gs-1180	32	12	50	50	NUM
gs-1180	32	13	100	100	NUM
gs-1180	32	14	150	150	NUM
gs-1180	32	15	200	200	NUM
gs-1180	32	16	250	250	NUM
gs-1180	32	17	300	300	NUM
gs-1180	32	18	350	350	NUM
gs-1180	32	19	400	400	NUM
gs-1180	32	20	450	450	NUM
gs-1180	32	21	0	0	NUM
gs-1180	32	22	20	20	NUM
gs-1180	32	23	40	40	NUM
gs-1180	32	24	60	60	NUM
gs-1180	32	25	80	80	NUM
gs-1180	32	26	100	100	NUM
gs-1180	32	27	120	120	NUM
gs-1180	32	28	140	140	NUM
gs-1180	32	29	160	160	NUM
gs-1180	32	30	180	180	NUM
gs-1180	32	31	200	200	NUM
gs-1180	32	32	r	r	NOUN
gs-1180	32	33	es	es	NOUN
gs-1180	32	34	is	be	AUX
gs-1180	32	35	tiv	tiv	PROPN
gs-1180	32	36	ity	ity	PROPN
gs-1180	32	37	(	(	PUNCT
gs-1180	32	38	oh	oh	INTJ
gs-1180	32	39	m	m	VERB
gs-1180	32	40	∙c	∙c	ADJ
gs-1180	32	41	m	m	NOUN
gs-1180	32	42	)	)	PUNCT
gs-1180	32	43	temperature	temperature	NOUN
gs-1180	32	44	(	(	PUNCT
gs-1180	32	45	oc	oc	NOUN
gs-1180	32	46	)	)	PUNCT
gs-1180	32	47	after	after	ADP
gs-1180	32	48	irrad	irrad	PROPN
gs-1180	32	49	.	.	PUNCT
gs-1180	33	1	before	before	ADP
gs-1180	33	2	irrad	irrad	PROPN
gs-1180	33	3	.	.	PUNCT
gs-1180	34	1	ატ	ატ	VERB
gs-1180	34	2	n	n	CCONJ
gs-1180	34	3	-	-	PUNCT
gs-1180	34	4	si+4	si+4	NUM
gs-1180	34	5	.%ge	.%ge	ADJ
gs-1180	34	6	:p	:p	ADJ
gs-1180	34	7	fig.1	fig.1	PROPN
gs-1180	34	8	.	.	PUNCT
gs-1180	35	1	temperature	temperature	NOUN
gs-1180	35	2	changes	change	NOUN
gs-1180	35	3	of	of	ADP
gs-1180	35	4	electrical	electrical	ADJ
gs-1180	35	5	resistivity	resistivity	NOUN
gs-1180	35	6	in	in	ADP
gs-1180	35	7	the	the	DET
gs-1180	35	8	isochronal	isochronal	ADJ
gs-1180	35	9	annealing	anneal	VERB
gs-1180	35	10	range	range	NOUN
gs-1180	35	11	of	of	ADP
gs-1180	35	12	20	20	NUM
gs-1180	35	13	-	-	SYM
gs-1180	35	14	400	400	NUM
gs-1180	35	15	°	°	NUM
gs-1180	35	16	c	c	NOUN
gs-1180	35	17	in	in	ADP
gs-1180	35	18	60co	60co	ADJ
gs-1180	35	19	gamma	gamma	NOUN
gs-1180	35	20	-	-	PUNCT
gs-1180	35	21	photon	photon	NOUN
gs-1180	35	22	irradiated	irradiate	VERB
gs-1180	35	23	n	n	CCONJ
gs-1180	35	24	-	-	PUNCT
gs-1180	35	25	si+4at.%ge	si+4at.%ge	NOUN
gs-1180	35	26	:p	:p	NOUN
gs-1180	35	27	alloy	alloy	NOUN
gs-1180	35	28	.	.	PUNCT
gs-1180	36	1	by	by	ADP
gs-1180	36	2	gradually	gradually	ADV
gs-1180	36	3	increasing	increase	VERB
gs-1180	36	4	the	the	DET
gs-1180	36	5	temperature	temperature	NOUN
gs-1180	36	6	of	of	ADP
gs-1180	36	7	isochronal	isochronal	ADJ
gs-1180	36	8	annealing	annealing	NOUN
gs-1180	36	9	,	,	PUNCT
gs-1180	36	10	the	the	DET
gs-1180	36	11	electrical	electrical	ADJ
gs-1180	36	12	resistivity	resistivity	NOUN
gs-1180	36	13	decreases	decrease	VERB
gs-1180	36	14	to	to	ADP
gs-1180	36	15	a	a	DET
gs-1180	36	16	temperature	temperature	NOUN
gs-1180	36	17	of	of	ADP
gs-1180	36	18	120	120	NUM
gs-1180	36	19	°	°	NOUN
gs-1180	36	20	c	c	NOUN
gs-1180	36	21	.	.	PUNCT
gs-1180	37	1	in	in	ADP
gs-1180	37	2	the	the	DET
gs-1180	37	3	range	range	NOUN
gs-1180	37	4	of	of	ADP
gs-1180	37	5	120	120	NUM
gs-1180	37	6	-	-	SYM
gs-1180	37	7	175	175	NUM
gs-1180	37	8	°	°	NOUN
gs-1180	37	9	c	c	NOUN
gs-1180	37	10	,	,	PUNCT
gs-1180	37	11	its	its	PRON
gs-1180	37	12	value	value	NOUN
gs-1180	37	13	increases	increase	VERB
gs-1180	37	14	slightly	slightly	ADV
gs-1180	37	15	.	.	PUNCT
gs-1180	38	1	in	in	ADP
gs-1180	38	2	the	the	DET
gs-1180	38	3	given	give	VERB
gs-1180	38	4	temperature	temperature	NOUN
gs-1180	38	5	range	range	NOUN
gs-1180	38	6	,	,	PUNCT
gs-1180	38	7	the	the	DET
gs-1180	38	8	processes	process	NOUN
gs-1180	38	9	of	of	ADP
gs-1180	38	10	dissociation	dissociation	NOUN
gs-1180	38	11	of	of	ADP
gs-1180	38	12	the	the	DET
gs-1180	38	13	e	e	NOUN
gs-1180	38	14	-	-	NOUN
gs-1180	38	15	center	center	ADJ
gs-1180	38	16	(	(	PUNCT
gs-1180	38	17	pv	pv	NOUN
gs-1180	38	18	)	)	PUNCT
gs-1180	38	19	and	and	CCONJ
gs-1180	38	20	association	association	NOUN
gs-1180	38	21	of	of	ADP
gs-1180	38	22	the	the	DET
gs-1180	38	23	constituent	constituent	NOUN
gs-1180	38	24	components	component	NOUN
gs-1180	38	25	with	with	ADP
gs-1180	38	26	other	other	ADJ
gs-1180	38	27	types	type	NOUN
gs-1180	38	28	of	of	ADP
gs-1180	38	29	radiation	radiation	NOUN
gs-1180	38	30	defects	defect	NOUN
gs-1180	38	31	takes	take	VERB
gs-1180	38	32	place	place	NOUN
gs-1180	38	33	.	.	PUNCT
gs-1180	39	1	in	in	ADP
gs-1180	39	2	both	both	DET
gs-1180	39	3	cases	case	NOUN
gs-1180	39	4	,	,	PUNCT
gs-1180	39	5	changes	change	NOUN
gs-1180	39	6	in	in	ADP
gs-1180	39	7	electrical	electrical	ADJ
gs-1180	39	8	activity	activity	NOUN
gs-1180	39	9	of	of	ADP
gs-1180	39	10	radiation	radiation	NOUN
gs-1180	39	11	defects	defect	NOUN
gs-1180	39	12	are	be	AUX
gs-1180	39	13	expected	expect	VERB
gs-1180	39	14	.	.	PUNCT
gs-1180	40	1	concentration	concentration	NOUN
gs-1180	40	2	of	of	ADP
gs-1180	40	3	germanium	germanium	NOUN
gs-1180	40	4	and	and	CCONJ
gs-1180	40	5	technological	technological	ADJ
gs-1180	40	6	impurities	impurity	NOUN
gs-1180	40	7	(	(	PUNCT
gs-1180	40	8	oi	oi	INTJ
gs-1180	40	9	,	,	PUNCT
gs-1180	40	10	cs	cs	NOUN
gs-1180	40	11	)	)	PUNCT
gs-1180	40	12	are	be	AUX
gs-1180	40	13	high	high	ADJ
gs-1180	40	14	in	in	ADP
gs-1180	40	15	the	the	DET
gs-1180	40	16	test	test	NOUN
gs-1180	40	17	sample	sample	NOUN
gs-1180	40	18	.	.	PUNCT
gs-1180	41	1	this	this	DET
gs-1180	41	2	circumstance	circumstance	NOUN
gs-1180	41	3	on	on	ADP
gs-1180	41	4	the	the	DET
gs-1180	41	5	one	one	NUM
gs-1180	41	6	hand	hand	NOUN
gs-1180	41	7	complicates	complicate	VERB
gs-1180	41	8	(	(	PUNCT
gs-1180	41	9	the	the	DET
gs-1180	41	10	influence	influence	NOUN
gs-1180	41	11	of	of	ADP
gs-1180	41	12	ge	ge	PROPN
gs-1180	41	13	)	)	PUNCT
gs-1180	41	14	,	,	PUNCT
gs-1180	41	15	and	and	CCONJ
gs-1180	41	16	on	on	ADP
gs-1180	41	17	the	the	DET
gs-1180	41	18	other	other	ADJ
gs-1180	41	19	hand	hand	NOUN
gs-1180	41	20	(	(	PUNCT
gs-1180	41	21	the	the	DET
gs-1180	41	22	influence	influence	NOUN
gs-1180	41	23	of	of	ADP
gs-1180	41	24	oi	oi	ADJ
gs-1180	41	25	)	)	PUNCT
gs-1180	41	26	stimulates	stimulate	VERB
gs-1180	41	27	the	the	DET
gs-1180	41	28	formation	formation	NOUN
gs-1180	41	29	of	of	ADP
gs-1180	41	30	a	a	DET
gs-1180	41	31	-	-	PUNCT
gs-1180	41	32	centers	center	NOUN
gs-1180	41	33	(	(	PUNCT
gs-1180	41	34	vo)0	vo)0	PROPN
gs-1180	41	35	with	with	ADP
gs-1180	41	36	the	the	DET
gs-1180	41	37	participation	participation	NOUN
gs-1180	41	38	of	of	ADP
gs-1180	41	39	vacancies	vacancy	NOUN
gs-1180	41	40	(	(	PUNCT
gs-1180	41	41	v	v	NOUN
gs-1180	41	42	)	)	PUNCT
gs-1180	41	43	released	release	VERB
gs-1180	41	44	by	by	ADP
gs-1180	41	45	the	the	DET
gs-1180	41	46	dissociation	dissociation	NOUN
gs-1180	41	47	of	of	ADP
gs-1180	41	48	e	e	NOUN
gs-1180	41	49	-	-	NOUN
gs-1180	41	50	centers	center	NOUN
gs-1180	41	51	.	.	PUNCT
gs-1180	42	1	due	due	ADP
gs-1180	42	2	to	to	ADP
gs-1180	42	3	the	the	DET
gs-1180	42	4	influence	influence	NOUN
gs-1180	42	5	of	of	ADP
gs-1180	42	6	dissociation	dissociation	NOUN
gs-1180	42	7	-	-	PUNCT
gs-1180	42	8	association	association	NOUN
gs-1180	42	9	processes	process	NOUN
gs-1180	42	10	,	,	PUNCT
gs-1180	42	11	the	the	DET
gs-1180	42	12	change	change	NOUN
gs-1180	42	13	in	in	ADP
gs-1180	42	14	electrical	electrical	ADJ
gs-1180	42	15	resistivity	resistivity	NOUN
gs-1180	42	16	at	at	ADP
gs-1180	42	17	temperatures	temperature	NOUN
gs-1180	42	18	of	of	ADP
gs-1180	42	19	100	100	NUM
gs-1180	42	20	-	-	SYM
gs-1180	42	21	175	175	NUM
gs-1180	42	22	°	°	NOUN
gs-1180	42	23	c	c	NOUN
gs-1180	42	24	is	be	AUX
gs-1180	42	25	relatively	relatively	ADV
gs-1180	42	26	slow	slow	ADJ
gs-1180	42	27	.	.	PUNCT
gs-1180	43	1	according	accord	VERB
gs-1180	43	2	to	to	ADP
gs-1180	43	3	literature	literature	NOUN
gs-1180	43	4	data	datum	NOUN
gs-1180	43	5	,	,	PUNCT
gs-1180	43	6	in	in	ADP
gs-1180	43	7	the	the	DET
gs-1180	43	8	interval	interval	NOUN
gs-1180	43	9	of	of	ADP
gs-1180	43	10	20	20	NUM
gs-1180	43	11	-	-	SYM
gs-1180	43	12	175	175	NUM
gs-1180	43	13	°	°	NOUN
gs-1180	43	14	c	c	NOUN
gs-1180	43	15	,	,	PUNCT
gs-1180	43	16	dissociation	dissociation	NOUN
gs-1180	43	17	of	of	ADP
gs-1180	43	18	one	one	NUM
gs-1180	43	19	part	part	NOUN
gs-1180	43	20	of	of	ADP
gs-1180	43	21	e	e	NOUN
gs-1180	43	22	-	-	NOUN
gs-1180	43	23	centers	center	NOUN
gs-1180	43	24	and	and	CCONJ
gs-1180	43	25	distribution	distribution	NOUN
gs-1180	43	26	of	of	ADP
gs-1180	43	27	constituent	constituent	ADJ
gs-1180	43	28	components	component	NOUN
gs-1180	43	29	in	in	ADP
gs-1180	43	30	complexes	complex	NOUN
gs-1180	43	31	of	of	ADP
gs-1180	43	32	radiation	radiation	NOUN
gs-1180	43	33	defects	defect	NOUN
gs-1180	43	34	takes	take	VERB
gs-1180	43	35	place	place	NOUN
gs-1180	43	36	.	.	PUNCT
gs-1180	44	1	the	the	DET
gs-1180	44	2	second	second	ADJ
gs-1180	44	3	part	part	NOUN
gs-1180	44	4	,	,	PUNCT
gs-1180	44	5	as	as	ADP
gs-1180	44	6	a	a	DET
gs-1180	44	7	whole	whole	NOUN
gs-1180	44	8	,	,	PUNCT
gs-1180	44	9	moves	move	NOUN
gs-1180	44	10	by	by	ADP
gs-1180	44	11	diffusion	diffusion	NOUN
gs-1180	44	12	in	in	ADP
gs-1180	44	13	the	the	DET
gs-1180	44	14	crystalline	crystalline	NOUN
gs-1180	44	15	lattice	lattice	NOUN
gs-1180	44	16	and	and	CCONJ
gs-1180	44	17	forms	form	NOUN
gs-1180	44	18	complexes	complex	NOUN
gs-1180	44	19	of	of	ADP
gs-1180	44	20	various	various	ADJ
gs-1180	44	21	compositions	composition	NOUN
gs-1180	44	22	with	with	ADP
gs-1180	44	23	radiation	radiation	NOUN
gs-1180	44	24	defects	defect	NOUN
gs-1180	44	25	(	(	PUNCT
gs-1180	44	26	pov	pov	NOUN
gs-1180	44	27	,	,	PUNCT
gs-1180	44	28	pv2	pv2	NOUN
gs-1180	44	29	,	,	PUNCT
gs-1180	44	30	etc	etc	X
gs-1180	44	31	...	...	PUNCT
gs-1180	44	32	)	)	PUNCT
gs-1180	44	33	.	.	PUNCT
gs-1180	45	1	near	near	ADP
gs-1180	45	2	to	to	ADP
gs-1180	45	3	200	200	NUM
gs-1180	45	4	°	°	NOUN
gs-1180	45	5	c	c	NOUN
gs-1180	45	6	change	change	NOUN
gs-1180	45	7	of	of	ADP
gs-1180	45	8	peak	peak	NOUN
gs-1180	45	9	shape	shape	NOUN
gs-1180	45	10	of	of	ADP
gs-1180	45	11	the	the	DET
gs-1180	45	12	specific	specific	ADJ
gs-1180	45	13	electrical	electrical	ADJ
gs-1180	45	14	resistivity	resistivity	NOUN
gs-1180	45	15	can	can	AUX
gs-1180	45	16	be	be	AUX
gs-1180	45	17	connected	connect	VERB
gs-1180	45	18	with	with	ADP
gs-1180	45	19	the	the	DET
gs-1180	45	20	increase	increase	NOUN
gs-1180	45	21	in	in	ADP
gs-1180	45	22	the	the	DET
gs-1180	45	23	intensity	intensity	NOUN
gs-1180	45	24	of	of	ADP
gs-1180	45	25	a	a	DET
gs-1180	45	26	-	-	PUNCT
gs-1180	45	27	centers	center	NOUN
gs-1180	45	28	dissociation	dissociation	NOUN
gs-1180	45	29	.	.	PUNCT
gs-1180	46	1	the	the	DET
gs-1180	46	2	influence	influence	NOUN
gs-1180	46	3	of	of	ADP
gs-1180	46	4	high	high	ADJ
gs-1180	46	5	concentration	concentration	NOUN
gs-1180	46	6	of	of	ADP
gs-1180	46	7	ge	ge	PROPN
gs-1180	46	8	is	be	AUX
gs-1180	46	9	clearly	clearly	ADV
gs-1180	46	10	revealed	reveal	VERB
gs-1180	46	11	.	.	PUNCT
gs-1180	47	1	in	in	ADP
gs-1180	47	2	particular	particular	ADJ
gs-1180	47	3	,	,	PUNCT
gs-1180	47	4	the	the	DET
gs-1180	47	5	acenters	acenter	NOUN
gs-1180	47	6	dissociation	dissociation	NOUN
gs-1180	47	7	temperature	temperature	NOUN
gs-1180	47	8	decreases	decrease	NOUN
gs-1180	47	9	by	by	ADP
gs-1180	47	10	40	40	NUM
gs-1180	47	11	-	-	SYM
gs-1180	47	12	50	50	NUM
gs-1180	47	13	°	°	NUM
gs-1180	47	14	c	c	NOUN
gs-1180	47	15	compared	compare	VERB
gs-1180	47	16	to	to	ADP
gs-1180	47	17	si	si	INTJ
gs-1180	47	18	,	,	PUNCT
gs-1180	47	19	in	in	ADP
gs-1180	47	20	which	which	PRON
gs-1180	47	21	the	the	DET
gs-1180	47	22	concentration	concentration	NOUN
gs-1180	47	23	of	of	ADP
gs-1180	47	24	p	p	NOUN
gs-1180	47	25	is	be	AUX
gs-1180	47	26	≈1014	≈1014	NOUN
gs-1180	47	27	cm-3	cm-3	NOUN
gs-1180	47	28	.	.	PUNCT
gs-1180	48	1	strong	strong	ADJ
gs-1180	48	2	overlap	overlap	NOUN
gs-1180	48	3	of	of	ADP
gs-1180	48	4	stresses	stress	NOUN
gs-1180	48	5	concentrated	concentrate	VERB
gs-1180	48	6	near	near	ADP
gs-1180	48	7	ge	ge	PROPN
gs-1180	48	8	atoms	atom	NOUN
gs-1180	48	9	(	(	PUNCT
gs-1180	48	10	under	under	ADP
gs-1180	48	11	conditions	condition	NOUN
gs-1180	48	12	of	of	ADP
gs-1180	48	13	high	high	ADJ
gs-1180	48	14	ge	ge	PROPN
gs-1180	48	15	concentration	concentration	NOUN
gs-1180	48	16	)	)	PUNCT
gs-1180	48	17	stimulates	stimulate	VERB
gs-1180	48	18	the	the	DET
gs-1180	48	19	dissociation	dissociation	NOUN
gs-1180	48	20	of	of	ADP
gs-1180	48	21	vo	vo	NOUN
gs-1180	48	22	centers	center	NOUN
gs-1180	48	23	and	and	CCONJ
gs-1180	48	24	also	also	ADV
gs-1180	48	25	association	association	NOUN
gs-1180	48	26	of	of	ADP
gs-1180	48	27	part	part	NOUN
gs-1180	48	28	of	of	ADP
gs-1180	48	29	them	they	PRON
gs-1180	48	30	(	(	PUNCT
gs-1180	48	31	~15	~15	NOUN
gs-1180	48	32	%	%	NOUN
gs-1180	48	33	)	)	PUNCT
gs-1180	48	34	with	with	ADP
gs-1180	48	35	oi	oi	ADJ
gs-1180	48	36	atoms	atom	NOUN
gs-1180	48	37	.	.	PUNCT
gs-1180	49	1	this	this	PRON
gs-1180	49	2	leads	lead	VERB
gs-1180	49	3	to	to	ADP
gs-1180	49	4	the	the	DET
gs-1180	49	5	formation	formation	NOUN
gs-1180	49	6	of	of	ADP
gs-1180	49	7	optically	optically	ADV
gs-1180	49	8	active	active	ADJ
gs-1180	49	9	but	but	CCONJ
gs-1180	49	10	electrically	electrically	ADV
gs-1180	49	11	neutral	neutral	ADJ
gs-1180	49	12	vo2	vo2	NOUN
gs-1180	49	13	complexes	complex	NOUN
gs-1180	49	14	.	.	PUNCT
gs-1180	50	1	above	above	ADP
gs-1180	50	2	200	200	NUM
gs-1180	50	3	°	°	NOUN
gs-1180	50	4	c	c	NOUN
gs-1180	50	5	,	,	PUNCT
gs-1180	50	6	the	the	DET
gs-1180	50	7	electrical	electrical	ADJ
gs-1180	50	8	resistivity	resistivity	NOUN
gs-1180	50	9	decreases	decrease	VERB
gs-1180	50	10	again	again	ADV
gs-1180	50	11	significantly	significantly	ADV
gs-1180	50	12	and	and	CCONJ
gs-1180	50	13	is	be	AUX
gs-1180	50	14	characterized	characterize	VERB
gs-1180	50	15	by	by	ADP
gs-1180	50	16	weakly	weakly	ADJ
gs-1180	50	17	visible	visible	ADJ
gs-1180	50	18	zigzag	zigzag	NOUN
gs-1180	50	19	changes	change	NOUN
gs-1180	50	20	.	.	PUNCT
gs-1180	51	1	in	in	ADP
gs-1180	51	2	these	these	DET
gs-1180	51	3	conditions	condition	NOUN
gs-1180	51	4	,	,	PUNCT
gs-1180	51	5	under	under	ADP
gs-1180	51	6	the	the	DET
gs-1180	51	7	influence	influence	NOUN
gs-1180	51	8	of	of	ADP
gs-1180	51	9	ge	ge	PROPN
gs-1180	51	10	,	,	PUNCT
gs-1180	51	11	the	the	DET
gs-1180	51	12	processes	process	NOUN
gs-1180	51	13	of	of	ADP
gs-1180	51	14	dissosiation	dissosiation	NOUN
gs-1180	51	15	of	of	ADP
gs-1180	51	16	divacancies	divacancie	NOUN
gs-1180	51	17	and	and	CCONJ
gs-1180	51	18	association	association	NOUN
gs-1180	51	19	with	with	ADP
gs-1180	51	20	oi	oi	PROPN
gs-1180	51	21	are	be	AUX
gs-1180	51	22	stimulated	stimulate	VERB
gs-1180	51	23	,	,	PUNCT
gs-1180	51	24	as	as	ADP
gs-1180	51	25	a	a	DET
gs-1180	51	26	result	result	NOUN
gs-1180	51	27	of	of	ADP
gs-1180	51	28	which	which	PRON
gs-1180	51	29	electrically	electrically	ADV
gs-1180	51	30	georgian	georgian	ADJ
gs-1180	51	31	scientists/ქართველი	scientists/ქართველი	NOUN
gs-1180	51	32	მეცნიერები	მეცნიერები	NOUN
gs-1180	51	33	ტ.	ტ.	VERB
gs-1180	51	34	4	4	NUM
gs-1180	51	35	n	n	PRON
gs-1180	51	36	3	3	NUM
gs-1180	51	37	,	,	PUNCT
gs-1180	51	38	2022	2022	NUM
gs-1180	51	39	326	326	NUM
gs-1180	51	40	active	active	ADJ
gs-1180	51	41	vacancies	vacancy	NOUN
gs-1180	51	42	and	and	CCONJ
gs-1180	51	43	thermally	thermally	ADV
gs-1180	51	44	unstable	unstable	ADJ
gs-1180	51	45	v2o	v2o	NOUN
gs-1180	51	46	complexes	complex	NOUN
gs-1180	51	47	are	be	AUX
gs-1180	51	48	formed	form	VERB
gs-1180	51	49	.	.	PUNCT
gs-1180	52	1	all	all	PRON
gs-1180	52	2	mentioned	mention	VERB
gs-1180	52	3	defects	defect	NOUN
gs-1180	52	4	participate	participate	VERB
gs-1180	52	5	in	in	ADP
gs-1180	52	6	the	the	DET
gs-1180	52	7	formation	formation	NOUN
gs-1180	52	8	of	of	ADP
gs-1180	52	9	more	more	ADV
gs-1180	52	10	stable	stable	ADJ
gs-1180	52	11	vmon	vmon	ADJ
gs-1180	52	12	complexes	complex	NOUN
gs-1180	52	13	under	under	ADP
gs-1180	52	14	the	the	DET
gs-1180	52	15	influence	influence	NOUN
gs-1180	52	16	of	of	ADP
gs-1180	52	17	temperature	temperature	NOUN
gs-1180	52	18	and	and	CCONJ
gs-1180	52	19	stresses	stress	NOUN
gs-1180	52	20	concentrated	concentrate	VERB
gs-1180	52	21	near	near	ADP
gs-1180	52	22	ge	ge	PROPN
gs-1180	52	23	atoms	atom	NOUN
gs-1180	52	24	.	.	PUNCT
gs-1180	53	1	the	the	DET
gs-1180	53	2	compensating	compensating	NOUN
gs-1180	53	3	effect	effect	NOUN
gs-1180	53	4	of	of	ADP
gs-1180	53	5	radiation	radiation	NOUN
gs-1180	53	6	defects	defect	NOUN
gs-1180	53	7	generated	generate	VERB
gs-1180	53	8	by	by	ADP
gs-1180	53	9	gamma	gamma	NOUN
gs-1180	53	10	-	-	PUNCT
gs-1180	53	11	photons	photon	NOUN
gs-1180	53	12	led	lead	VERB
gs-1180	53	13	to	to	ADP
gs-1180	53	14	a	a	DET
gs-1180	53	15	decrease	decrease	NOUN
gs-1180	53	16	in	in	ADP
gs-1180	53	17	the	the	DET
gs-1180	53	18	electron	electron	NOUN
gs-1180	53	19	concentration	concentration	NOUN
gs-1180	53	20	in	in	ADP
gs-1180	53	21	the	the	DET
gs-1180	53	22	test	test	NOUN
gs-1180	53	23	sample(fig	sample(fig	PROPN
gs-1180	53	24	.	.	PUNCT
gs-1180	54	1	2	2	NUM
gs-1180	54	2	)	)	PUNCT
gs-1180	54	3	.	.	PUNCT
gs-1180	55	1	such	such	ADJ
gs-1180	55	2	defects	defect	NOUN
gs-1180	55	3	are	be	AUX
gs-1180	55	4	e	e	NOUN
gs-1180	55	5	-	-	NOUN
gs-1180	55	6	centers	center	NOUN
gs-1180	55	7	(	(	PUNCT
gs-1180	55	8	pv	pv	NOUN
gs-1180	55	9	)	)	PUNCT
gs-1180	55	10	,	,	PUNCT
gs-1180	55	11	which	which	PRON
gs-1180	55	12	are	be	AUX
gs-1180	55	13	formed	form	VERB
gs-1180	55	14	under	under	ADP
gs-1180	55	15	irradiation	irradiation	NOUN
gs-1180	55	16	exposure	exposure	NOUN
gs-1180	55	17	and	and	CCONJ
gs-1180	55	18	absorb	absorb	VERB
gs-1180	55	19	two	two	NUM
gs-1180	55	20	electrons	electron	NOUN
gs-1180	55	21	from	from	ADP
gs-1180	55	22	the	the	DET
gs-1180	55	23	conduction	conduction	NOUN
gs-1180	55	24	band.raising	band.raise	VERB
gs-1180	55	25	the	the	DET
gs-1180	55	26	isochronal	isochronal	ADJ
gs-1180	55	27	annealing	anneal	VERB
gs-1180	55	28	temperature	temperature	NOUN
gs-1180	55	29	up	up	ADP
gs-1180	55	30	to	to	PART
gs-1180	55	31	80	80	NUM
gs-1180	55	32	°	°	NOUN
gs-1180	55	33	c	c	NOUN
gs-1180	55	34	leads	lead	VERB
gs-1180	55	35	to	to	ADP
gs-1180	55	36	the	the	DET
gs-1180	55	37	dissociation	dissociation	NOUN
gs-1180	55	38	process	process	NOUN
gs-1180	55	39	of	of	ADP
gs-1180	55	40	e	e	NOUN
gs-1180	55	41	-	-	NOUN
gs-1180	55	42	centers	center	NOUN
gs-1180	55	43	and	and	CCONJ
gs-1180	55	44	,	,	PUNCT
gs-1180	55	45	accordingly	accordingly	ADV
gs-1180	55	46	,	,	PUNCT
gs-1180	55	47	the	the	DET
gs-1180	55	48	release	release	NOUN
gs-1180	55	49	of	of	ADP
gs-1180	55	50	electrons	electron	NOUN
gs-1180	55	51	.	.	PUNCT
gs-1180	56	1	this	this	PRON
gs-1180	56	2	is	be	AUX
gs-1180	56	3	shown	show	VERB
gs-1180	56	4	on	on	ADP
gs-1180	56	5	the	the	DET
gs-1180	56	6	graph	graph	NOUN
gs-1180	56	7	by	by	ADP
gs-1180	56	8	increasing	increase	VERB
gs-1180	56	9	the	the	DET
gs-1180	56	10	concentration	concentration	NOUN
gs-1180	56	11	of	of	ADP
gs-1180	56	12	electrons	electron	NOUN
gs-1180	56	13	.	.	PUNCT
gs-1180	57	1	a	a	DET
gs-1180	57	2	gradual	gradual	ADJ
gs-1180	57	3	increase	increase	NOUN
gs-1180	57	4	of	of	ADP
gs-1180	57	5	the	the	DET
gs-1180	57	6	annealing	anneal	VERB
gs-1180	57	7	temperature	temperature	NOUN
gs-1180	57	8	leads	lead	VERB
gs-1180	57	9	to	to	PART
gs-1180	57	10	decrease	decrease	NOUN
gs-1180	57	11	of	of	ADP
gs-1180	57	12	the	the	DET
gs-1180	57	13	electron	electron	NOUN
gs-1180	57	14	concentration	concentration	NOUN
gs-1180	57	15	into	into	ADP
gs-1180	57	16	a	a	DET
gs-1180	57	17	temperature	temperature	NOUN
gs-1180	57	18	range	range	NOUN
gs-1180	57	19	of	of	ADP
gs-1180	57	20	120	120	NUM
gs-1180	57	21	-	-	SYM
gs-1180	57	22	200	200	NUM
gs-1180	57	23	°	°	NOUN
gs-1180	57	24	c	c	NOUN
gs-1180	57	25	.	.	NOUN
gs-1180	57	26	0	0	NUM
gs-1180	58	1	50	50	NUM
gs-1180	58	2	100	100	NUM
gs-1180	58	3	150	150	NUM
gs-1180	58	4	200	200	NUM
gs-1180	58	5	250	250	NUM
gs-1180	58	6	300	300	NUM
gs-1180	58	7	350	350	NUM
gs-1180	58	8	400	400	NUM
gs-1180	58	9	450	450	NUM
gs-1180	58	10	0	0	NUM
gs-1180	58	11	2	2	NUM
gs-1180	58	12	4	4	NUM
gs-1180	58	13	6	6	NUM
gs-1180	58	14	8	8	NUM
gs-1180	58	15	10	10	NUM
gs-1180	58	16	12	12	NUM
gs-1180	58	17	14	14	NUM
gs-1180	58	18	16	16	NUM
gs-1180	58	19	18	18	NUM
gs-1180	58	20	20	20	NUM
gs-1180	58	21	e	e	NOUN
gs-1180	58	22	le	le	X
gs-1180	58	23	ct	ct	PROPN
gs-1180	58	24	ro	ro	PROPN
gs-1180	58	25	n	n	PROPN
gs-1180	58	26	c	c	PROPN
gs-1180	58	27	o	o	PROPN
gs-1180	58	28	nc	nc	PROPN
gs-1180	58	29	en	en	PROPN
gs-1180	58	30	tr	tr	DET
gs-1180	58	31	a	a	DET
gs-1180	58	32	tio	tio	NOUN
gs-1180	58	33	n	n	CCONJ
gs-1180	58	34	(	(	PUNCT
gs-1180	58	35	1	1	NUM
gs-1180	58	36	01	01	NUM
gs-1180	58	37	3	3	NUM
gs-1180	58	38	c	c	NOUN
gs-1180	58	39	m	m	VERB
gs-1180	58	40	-3	-3	PUNCT
gs-1180	58	41	)	)	PUNCT
gs-1180	58	42	temperature	temperature	NOUN
gs-1180	58	43	(	(	PUNCT
gs-1180	58	44	oc	oc	NOUN
gs-1180	58	45	)	)	PUNCT
gs-1180	58	46	after	after	ADP
gs-1180	58	47	irrad	irrad	PROPN
gs-1180	58	48	.	.	PUNCT
gs-1180	59	1	before	before	ADP
gs-1180	59	2	irrad	irrad	PROPN
gs-1180	59	3	.	.	PUNCT
gs-1180	60	1	ატ	ატ	VERB
gs-1180	60	2	n	n	CCONJ
gs-1180	60	3	-	-	PUNCT
gs-1180	60	4	si+4	si+4	NUM
gs-1180	60	5	.%ge	.%ge	ADJ
gs-1180	60	6	:p	:p	ADJ
gs-1180	60	7	fig	fig	NOUN
gs-1180	60	8	.	.	PUNCT
gs-1180	61	1	2	2	X
gs-1180	61	2	.	.	X
gs-1180	61	3	temperature	temperature	NOUN
gs-1180	61	4	changes	change	NOUN
gs-1180	61	5	of	of	ADP
gs-1180	61	6	electron	electron	NOUN
gs-1180	61	7	concentration	concentration	NOUN
gs-1180	61	8	in	in	ADP
gs-1180	61	9	the	the	DET
gs-1180	61	10	isochronal	isochronal	ADJ
gs-1180	61	11	annealing	anneal	VERB
gs-1180	61	12	range	range	NOUN
gs-1180	61	13	of	of	ADP
gs-1180	61	14	20	20	NUM
gs-1180	61	15	-	-	SYM
gs-1180	61	16	400	400	NUM
gs-1180	61	17	°	°	NUM
gs-1180	61	18	c	c	NOUN
gs-1180	61	19	in	in	ADP
gs-1180	61	20	60co	60co	ADJ
gs-1180	61	21	gamma	gamma	NOUN
gs-1180	61	22	-	-	PUNCT
gs-1180	61	23	photon	photon	NOUN
gs-1180	61	24	irradiated	irradiate	VERB
gs-1180	61	25	n	n	CCONJ
gs-1180	61	26	-	-	PUNCT
gs-1180	61	27	si+4at.%ge	si+4at.%ge	NOUN
gs-1180	61	28	:p	:p	NOUN
gs-1180	61	29	alloy	alloy	NOUN
gs-1180	61	30	.	.	PUNCT
gs-1180	62	1	in	in	ADP
gs-1180	62	2	the	the	DET
gs-1180	62	3	mentioned	mention	VERB
gs-1180	62	4	temperature	temperature	NOUN
gs-1180	62	5	range	range	NOUN
gs-1180	62	6	,	,	PUNCT
gs-1180	62	7	the	the	DET
gs-1180	62	8	participation	participation	NOUN
gs-1180	62	9	of	of	ADP
gs-1180	62	10	free	free	ADJ
gs-1180	62	11	electrons	electron	NOUN
gs-1180	62	12	in	in	ADP
gs-1180	62	13	the	the	DET
gs-1180	62	14	processes	process	NOUN
gs-1180	62	15	of	of	ADP
gs-1180	62	16	recharging	recharge	VERB
gs-1180	62	17	the	the	DET
gs-1180	62	18	dislocations	dislocation	NOUN
gs-1180	62	19	cores	core	NOUN
gs-1180	62	20	and	and	CCONJ
gs-1180	62	21	the	the	DET
gs-1180	62	22	filling	filling	NOUN
gs-1180	62	23	of	of	ADP
gs-1180	62	24	broken	broken	ADJ
gs-1180	62	25	electronic	electronic	ADJ
gs-1180	62	26	bonds	bond	NOUN
gs-1180	62	27	is	be	AUX
gs-1180	62	28	expected	expect	VERB
gs-1180	62	29	.	.	PUNCT
gs-1180	63	1	this	this	DET
gs-1180	63	2	circumstance	circumstance	NOUN
gs-1180	63	3	leads	lead	VERB
gs-1180	63	4	to	to	ADP
gs-1180	63	5	the	the	DET
gs-1180	63	6	decrease	decrease	NOUN
gs-1180	63	7	in	in	ADP
gs-1180	63	8	the	the	DET
gs-1180	63	9	concentration	concentration	NOUN
gs-1180	63	10	of	of	ADP
gs-1180	63	11	electrons	electron	NOUN
gs-1180	63	12	in	in	ADP
gs-1180	63	13	the	the	DET
gs-1180	63	14	interval	interval	NOUN
gs-1180	63	15	100	100	NUM
gs-1180	63	16	-	-	SYM
gs-1180	63	17	220	220	NUM
gs-1180	63	18	°	°	NOUN
gs-1180	63	19	c	c	NOUN
gs-1180	63	20	.	.	PUNCT
gs-1180	64	1	at	at	ADP
gs-1180	64	2	elevated	elevated	ADJ
gs-1180	64	3	temperatures	temperature	NOUN
gs-1180	64	4	(	(	PUNCT
gs-1180	64	5	≥250	≥250	NOUN
gs-1180	64	6	°	°	NOUN
gs-1180	64	7	c	c	NOUN
gs-1180	64	8	)	)	PUNCT
gs-1180	64	9	,	,	PUNCT
gs-1180	64	10	intense	intense	ADJ
gs-1180	64	11	annealing	annealing	NOUN
gs-1180	64	12	of	of	ADP
gs-1180	64	13	electrically	electrically	ADV
gs-1180	64	14	active	active	ADJ
gs-1180	64	15	radiation	radiation	NOUN
gs-1180	64	16	defects	defect	NOUN
gs-1180	64	17	and	and	CCONJ
gs-1180	64	18	formation	formation	NOUN
gs-1180	64	19	of	of	ADP
gs-1180	64	20	multi	multi	ADJ
gs-1180	64	21	-	-	NOUN
gs-1180	64	22	vacancy	vacancy	ADJ
gs-1180	64	23	,	,	PUNCT
gs-1180	64	24	electrically	electrically	ADV
gs-1180	64	25	neutral	neutral	ADJ
gs-1180	64	26	defects	defect	NOUN
gs-1180	64	27	take	take	VERB
gs-1180	64	28	place	place	NOUN
gs-1180	64	29	,	,	PUNCT
gs-1180	64	30	that	that	PRON
gs-1180	64	31	means	mean	VERB
gs-1180	64	32	the	the	DET
gs-1180	64	33	weakening	weakening	NOUN
gs-1180	64	34	of	of	ADP
gs-1180	64	35	compensating	compensate	VERB
gs-1180	64	36	effect	effect	NOUN
gs-1180	64	37	of	of	ADP
gs-1180	64	38	radiation	radiation	NOUN
gs-1180	64	39	defects	defect	NOUN
gs-1180	64	40	.	.	PUNCT
gs-1180	65	1	this	this	PRON
gs-1180	65	2	creates	create	VERB
gs-1180	65	3	the	the	DET
gs-1180	65	4	conditions	condition	NOUN
gs-1180	65	5	for	for	ADP
gs-1180	65	6	increasing	increase	VERB
gs-1180	65	7	the	the	DET
gs-1180	65	8	concentration	concentration	NOUN
gs-1180	65	9	of	of	ADP
gs-1180	65	10	electrons	electron	NOUN
gs-1180	65	11	.	.	PUNCT
gs-1180	66	1	it	it	PRON
gs-1180	66	2	is	be	AUX
gs-1180	66	3	possible	possible	ADJ
gs-1180	66	4	that	that	SCONJ
gs-1180	66	5	the	the	DET
gs-1180	66	6	processes	process	NOUN
gs-1180	66	7	of	of	ADP
gs-1180	66	8	diffuse	diffuse	ADJ
gs-1180	66	9	distribution	distribution	NOUN
gs-1180	66	10	of	of	ADP
gs-1180	66	11	the	the	DET
gs-1180	66	12	dissociation	dissociation	NOUN
gs-1180	66	13	products	product	NOUN
gs-1180	66	14	of	of	ADP
gs-1180	66	15	radiation	radiation	NOUN
gs-1180	66	16	defects	defect	NOUN
gs-1180	66	17	occur	occur	VERB
gs-1180	66	18	simultaneously	simultaneously	ADV
gs-1180	66	19	in	in	ADP
gs-1180	66	20	the	the	DET
gs-1180	66	21	cores	core	NOUN
gs-1180	66	22	of	of	ADP
gs-1180	66	23	dislocations	dislocation	NOUN
gs-1180	66	24	and	and	CCONJ
gs-1180	66	25	in	in	ADP
gs-1180	66	26	the	the	DET
gs-1180	66	27	surrounding	surround	VERB
gs-1180	66	28	atmospheres	atmosphere	NOUN
gs-1180	66	29	of	of	ADP
gs-1180	66	30	impurities	impurity	NOUN
gs-1180	66	31	and	and	CCONJ
gs-1180	66	32	defects	defect	NOUN
gs-1180	66	33	.	.	PUNCT
gs-1180	67	1	in	in	ADP
gs-1180	67	2	such	such	ADJ
gs-1180	67	3	conditions	condition	NOUN
gs-1180	67	4	,	,	PUNCT
gs-1180	67	5	it	it	PRON
gs-1180	67	6	is	be	AUX
gs-1180	67	7	possible	possible	ADJ
gs-1180	67	8	to	to	PART
gs-1180	67	9	release	release	VERB
gs-1180	67	10	electrons	electron	NOUN
gs-1180	67	11	from	from	ADP
gs-1180	67	12	bonds	bond	NOUN
gs-1180	67	13	and	and	CCONJ
gs-1180	67	14	participate	participate	VERB
gs-1180	67	15	in	in	ADP
gs-1180	67	16	new	new	ADJ
gs-1180	67	17	bonds	bond	NOUN
gs-1180	67	18	in	in	ADP
gs-1180	67	19	a	a	DET
gs-1180	67	20	certain	certain	ADJ
gs-1180	67	21	number	number	NOUN
gs-1180	67	22	of	of	ADP
gs-1180	67	23	them	they	PRON
gs-1180	67	24	.	.	PUNCT
gs-1180	68	1	for	for	ADP
gs-1180	68	2	example	example	NOUN
gs-1180	68	3	,	,	PUNCT
gs-1180	68	4	si	si	PROPN
gs-1180	68	5	atom	atom	NOUN
gs-1180	68	6	complexes	complex	NOUN
gs-1180	68	7	near	near	ADP
gs-1180	68	8	the	the	DET
gs-1180	68	9	vacancy	vacancy	NOUN
gs-1180	68	10	-	-	PUNCT
gs-1180	68	11	dislocation	dislocation	NOUN
gs-1180	68	12	can	can	AUX
gs-1180	68	13	be	be	AUX
gs-1180	68	14	formed	form	VERB
gs-1180	68	15	.	.	PUNCT
gs-1180	69	1	such	such	ADJ
gs-1180	69	2	transformations	transformation	NOUN
gs-1180	69	3	,	,	PUNCT
gs-1180	69	4	which	which	PRON
gs-1180	69	5	are	be	AUX
gs-1180	69	6	practically	practically	ADV
gs-1180	69	7	difficult	difficult	ADJ
gs-1180	69	8	to	to	PART
gs-1180	69	9	control	control	VERB
gs-1180	69	10	,	,	PUNCT
gs-1180	69	11	cause	cause	VERB
gs-1180	69	12	a	a	DET
gs-1180	69	13	zigzag	zigzag	NOUN
gs-1180	69	14	increase	increase	NOUN
gs-1180	69	15	in	in	ADP
gs-1180	69	16	the	the	DET
gs-1180	69	17	concentration	concentration	NOUN
gs-1180	69	18	of	of	ADP
gs-1180	69	19	free	free	ADJ
gs-1180	69	20	electrons	electron	NOUN
gs-1180	69	21	in	in	ADP
gs-1180	69	22	the	the	DET
gs-1180	69	23	temperature	temperature	NOUN
gs-1180	69	24	interval	interval	NOUN
gs-1180	69	25	of	of	ADP
gs-1180	69	26	250	250	NUM
gs-1180	69	27	-	-	PUNCT
gs-1180	69	28	400	400	NUM
gs-1180	69	29	°	°	NOUN
gs-1180	69	30	c	c	NOUN
gs-1180	69	31	.	.	PUNCT
gs-1180	70	1	georgian	georgian	ADJ
gs-1180	70	2	scientists/ქართველი	scientists/ქართველი	PROPN
gs-1180	70	3	მეცნიერები	მეცნიერები	NOUN
gs-1180	70	4	ტ.	ტ.	VERB
gs-1180	70	5	4	4	NUM
gs-1180	70	6	n	n	PRON
gs-1180	70	7	3	3	NUM
gs-1180	70	8	,	,	PUNCT
gs-1180	70	9	2022	2022	NUM
gs-1180	70	10	327	327	NUM
gs-1180	70	11	the	the	DET
gs-1180	70	12	temperature	temperature	NOUN
gs-1180	70	13	dependence	dependence	NOUN
gs-1180	70	14	of	of	ADP
gs-1180	70	15	the	the	DET
gs-1180	70	16	mobility	mobility	NOUN
gs-1180	70	17	of	of	ADP
gs-1180	70	18	the	the	DET
gs-1180	70	19	electrons	electron	NOUN
gs-1180	70	20	in	in	ADP
gs-1180	70	21	60co	60co	ADJ
gs-1180	70	22	gamma	gamma	NOUN
gs-1180	70	23	-	-	PUNCT
gs-1180	70	24	photon	photon	NOUN
gs-1180	70	25	irradiated	irradiate	VERB
gs-1180	70	26	n	n	CCONJ
gs-1180	70	27	-	-	PUNCT
gs-1180	70	28	si+4at.%ge	si+4at.%ge	NOUN
gs-1180	70	29	:p	:p	NOUN
gs-1180	70	30	alloy	alloy	NOUN
gs-1180	70	31	under	under	ADP
gs-1180	70	32	the	the	DET
gs-1180	70	33	conditions	condition	NOUN
gs-1180	70	34	of	of	ADP
gs-1180	70	35	isochronal	isochronal	ADJ
gs-1180	70	36	annealing	annealing	NOUN
gs-1180	70	37	is	be	AUX
gs-1180	70	38	characterized	characterize	VERB
gs-1180	70	39	by	by	ADP
gs-1180	70	40	abundance	abundance	NOUN
gs-1180	70	41	of	of	ADP
gs-1180	70	42	maxima	maxima	NOUN
gs-1180	70	43	and	and	CCONJ
gs-1180	70	44	minima	minima	NOUN
gs-1180	70	45	of	of	ADP
gs-1180	70	46	different	different	ADJ
gs-1180	70	47	intensities	intensity	NOUN
gs-1180	70	48	in	in	ADP
gs-1180	70	49	the	the	DET
gs-1180	70	50	temperature	temperature	NOUN
gs-1180	70	51	interval	interval	NOUN
gs-1180	70	52	of	of	ADP
gs-1180	70	53	20	20	NUM
gs-1180	70	54	-	-	SYM
gs-1180	70	55	400	400	NUM
gs-1180	70	56	°	°	ADP
gs-1180	70	57	c	c	X
gs-1180	70	58	(	(	PUNCT
gs-1180	70	59	fig	fig	NOUN
gs-1180	70	60	.	.	PUNCT
gs-1180	71	1	3	3	NUM
gs-1180	71	2	)	)	PUNCT
gs-1180	71	3	.	.	PUNCT
gs-1180	72	1	0	0	NUM
gs-1180	72	2	50	50	NUM
gs-1180	72	3	100	100	NUM
gs-1180	72	4	150	150	NUM
gs-1180	72	5	200	200	NUM
gs-1180	72	6	250	250	NUM
gs-1180	72	7	300	300	NUM
gs-1180	72	8	350	350	NUM
gs-1180	72	9	400	400	NUM
gs-1180	72	10	450	450	NUM
gs-1180	72	11	0	0	NUM
gs-1180	72	12	1	1	NUM
gs-1180	72	13	2	2	NUM
gs-1180	72	14	3	3	NUM
gs-1180	72	15	4	4	NUM
gs-1180	72	16	5	5	NUM
gs-1180	72	17	6	6	NUM
gs-1180	72	18	7	7	NUM
gs-1180	72	19	8	8	NUM
gs-1180	72	20	9	9	NUM
gs-1180	72	21	10	10	NUM
gs-1180	72	22	11	11	NUM
gs-1180	72	23	12	12	NUM
gs-1180	72	24	13	13	NUM
gs-1180	72	25	14	14	NUM
gs-1180	72	26	15	15	NUM
gs-1180	72	27	ch	ch	PROPN
gs-1180	72	28	ar	ar	PROPN
gs-1180	72	29	ge	ge	PROPN
gs-1180	72	30	s	s	PROPN
gs-1180	72	31	ca	can	AUX
gs-1180	72	32	rr	rr	VERB
gs-1180	72	33	ie	ie	ADV
gs-1180	72	34	rs	rs	PROPN
gs-1180	72	35	m	m	PROPN
gs-1180	72	36	ob	ob	NOUN
gs-1180	72	37	ili	ili	NOUN
gs-1180	72	38	ty	ty	INTJ
gs-1180	72	39	(	(	PUNCT
gs-1180	72	40	10	10	NUM
gs-1180	72	41	2	2	NUM
gs-1180	72	42	c	c	NOUN
gs-1180	72	43	m	m	VERB
gs-1180	72	44	2	2	NUM
gs-1180	72	45	/	/	SYM
gs-1180	72	46	(	(	PUNCT
gs-1180	72	47	v	v	NOUN
gs-1180	72	48	s	s	NOUN
gs-1180	72	49	)	)	PUNCT
gs-1180	72	50	)	)	PUNCT
gs-1180	73	1	temperature	temperature	NOUN
gs-1180	73	2	(	(	PUNCT
gs-1180	73	3	oc	oc	NOUN
gs-1180	73	4	)	)	PUNCT
gs-1180	73	5	after	after	ADP
gs-1180	73	6	irrad	irrad	PROPN
gs-1180	73	7	.	.	PUNCT
gs-1180	74	1	before	before	ADP
gs-1180	74	2	irrad	irrad	PROPN
gs-1180	74	3	.	.	PUNCT
gs-1180	75	1	ატ	ატ	VERB
gs-1180	75	2	n	n	CCONJ
gs-1180	75	3	-	-	PUNCT
gs-1180	75	4	si+4	si+4	NUM
gs-1180	75	5	.%ge	.%ge	ADJ
gs-1180	75	6	:p	:p	ADJ
gs-1180	75	7	fig	fig	NOUN
gs-1180	75	8	.	.	PUNCT
gs-1180	76	1	3	3	X
gs-1180	76	2	.	.	X
gs-1180	76	3	temperature	temperature	NOUN
gs-1180	76	4	changes	change	NOUN
gs-1180	76	5	of	of	ADP
gs-1180	76	6	electron	electron	NOUN
gs-1180	76	7	mobility	mobility	NOUN
gs-1180	76	8	in	in	ADP
gs-1180	76	9	the	the	DET
gs-1180	76	10	isochronal	isochronal	ADJ
gs-1180	76	11	annealing	annealing	NOUN
gs-1180	76	12	range	range	NOUN
gs-1180	76	13	of	of	ADP
gs-1180	76	14	20400	20400	NUM
gs-1180	76	15	°	°	ADP
gs-1180	76	16	c	c	NOUN
gs-1180	76	17	in	in	ADP
gs-1180	76	18	60co	60co	ADJ
gs-1180	76	19	gamma	gamma	NOUN
gs-1180	76	20	-	-	PUNCT
gs-1180	76	21	photon	photon	NOUN
gs-1180	76	22	irradiated	irradiate	VERB
gs-1180	76	23	n	n	CCONJ
gs-1180	76	24	-	-	PUNCT
gs-1180	76	25	si+4at.%ge	si+4at.%ge	NOUN
gs-1180	76	26	:p	:p	NOUN
gs-1180	76	27	alloy	alloy	NOUN
gs-1180	76	28	.	.	PUNCT
gs-1180	77	1	at	at	ADP
gs-1180	77	2	room	room	NOUN
gs-1180	77	3	temperature	temperature	NOUN
gs-1180	77	4	,	,	PUNCT
gs-1180	77	5	the	the	DET
gs-1180	77	6	free	free	ADJ
gs-1180	77	7	electrons	electron	NOUN
gs-1180	77	8	mobility	mobility	NOUN
gs-1180	77	9	in	in	ADP
gs-1180	77	10	the	the	DET
gs-1180	77	11	gamma	gamma	NOUN
gs-1180	77	12	-	-	PUNCT
gs-1180	77	13	irradiated	irradiate	VERB
gs-1180	77	14	samples	sample	NOUN
gs-1180	77	15	is	be	AUX
gs-1180	77	16	increased	increase	VERB
gs-1180	77	17	in	in	ADP
gs-1180	77	18	comparison	comparison	NOUN
gs-1180	77	19	with	with	ADP
gs-1180	77	20	the	the	DET
gs-1180	77	21	non	non	ADJ
gs-1180	77	22	-	-	ADJ
gs-1180	77	23	irradiated	irradiated	ADJ
gs-1180	77	24	sample	sample	NOUN
gs-1180	77	25	.	.	PUNCT
gs-1180	78	1	obviously	obviously	ADV
gs-1180	78	2	,	,	PUNCT
gs-1180	78	3	the	the	DET
gs-1180	78	4	compensating	compensating	NOUN
gs-1180	78	5	effect	effect	NOUN
gs-1180	78	6	of	of	ADP
gs-1180	78	7	radiation	radiation	NOUN
gs-1180	78	8	defects	defect	NOUN
gs-1180	78	9	reduces	reduce	VERB
gs-1180	78	10	the	the	DET
gs-1180	78	11	number	number	NOUN
gs-1180	78	12	of	of	ADP
gs-1180	78	13	electrically	electrically	ADV
gs-1180	78	14	active	active	ADJ
gs-1180	78	15	sputtering	sputtering	ADJ
gs-1180	78	16	centers	center	NOUN
gs-1180	78	17	.	.	PUNCT
gs-1180	79	1	accordingly	accordingly	ADV
gs-1180	79	2	,	,	PUNCT
gs-1180	79	3	opportunities	opportunity	NOUN
gs-1180	79	4	to	to	PART
gs-1180	79	5	increase	increase	VERB
gs-1180	79	6	the	the	DET
gs-1180	79	7	mobility	mobility	NOUN
gs-1180	79	8	of	of	ADP
gs-1180	79	9	electrons	electron	NOUN
gs-1180	79	10	are	be	AUX
gs-1180	79	11	created	create	VERB
gs-1180	79	12	.	.	PUNCT
gs-1180	80	1	isochronal	isochronal	ADJ
gs-1180	80	2	annealing	annealing	NOUN
gs-1180	80	3	at	at	ADP
gs-1180	80	4	80	80	NUM
gs-1180	80	5	°	°	NOUN
gs-1180	80	6	c	c	NOUN
gs-1180	80	7	leads	lead	VERB
gs-1180	80	8	to	to	ADP
gs-1180	80	9	a	a	DET
gs-1180	80	10	noticeable	noticeable	ADJ
gs-1180	80	11	decrease	decrease	NOUN
gs-1180	80	12	in	in	ADP
gs-1180	80	13	mobility	mobility	NOUN
gs-1180	80	14	,	,	PUNCT
gs-1180	80	15	as	as	ADP
gs-1180	80	16	the	the	DET
gs-1180	80	17	concentration	concentration	NOUN
gs-1180	80	18	of	of	ADP
gs-1180	80	19	electrons	electron	NOUN
gs-1180	80	20	in	in	ADP
gs-1180	80	21	the	the	DET
gs-1180	80	22	conduction	conduction	NOUN
gs-1180	80	23	band	band	NOUN
gs-1180	80	24	increases	increase	NOUN
gs-1180	80	25	due	due	ADJ
gs-1180	80	26	to	to	ADP
gs-1180	80	27	the	the	DET
gs-1180	80	28	influence	influence	NOUN
gs-1180	80	29	of	of	ADP
gs-1180	80	30	electrons	electron	NOUN
gs-1180	80	31	released	release	VERB
gs-1180	80	32	by	by	ADP
gs-1180	80	33	the	the	DET
gs-1180	80	34	dissociation	dissociation	NOUN
gs-1180	80	35	of	of	ADP
gs-1180	80	36	e	e	NOUN
gs-1180	80	37	-	-	NOUN
gs-1180	80	38	centers	center	NOUN
gs-1180	80	39	.	.	PUNCT
gs-1180	81	1	the	the	DET
gs-1180	81	2	sharp	sharp	ADJ
gs-1180	81	3	increase	increase	NOUN
gs-1180	81	4	and	and	CCONJ
gs-1180	81	5	decrease	decrease	NOUN
gs-1180	81	6	of	of	ADP
gs-1180	81	7	the	the	DET
gs-1180	81	8	mobility	mobility	NOUN
gs-1180	81	9	in	in	ADP
gs-1180	81	10	the	the	DET
gs-1180	81	11	interval	interval	NOUN
gs-1180	81	12	of	of	ADP
gs-1180	81	13	100	100	NUM
gs-1180	81	14	-	-	PUNCT
gs-1180	81	15	200	200	NUM
gs-1180	81	16	°	°	NOUN
gs-1180	81	17	c	c	NOUN
gs-1180	81	18	is	be	AUX
gs-1180	81	19	stipulated	stipulate	VERB
gs-1180	81	20	by	by	ADP
gs-1180	81	21	many	many	ADJ
gs-1180	81	22	factors	factor	NOUN
gs-1180	81	23	.	.	PUNCT
gs-1180	82	1	first	first	ADV
gs-1180	82	2	of	of	ADP
gs-1180	82	3	all	all	PRON
gs-1180	82	4	,	,	PUNCT
gs-1180	82	5	it	it	PRON
gs-1180	82	6	should	should	AUX
gs-1180	82	7	be	be	AUX
gs-1180	82	8	noted	note	VERB
gs-1180	82	9	the	the	DET
gs-1180	82	10	areas	area	NOUN
gs-1180	82	11	created	create	VERB
gs-1180	82	12	by	by	ADP
gs-1180	82	13	strong	strong	ADJ
gs-1180	82	14	inhomogeneous	inhomogeneous	ADJ
gs-1180	82	15	distribution	distribution	NOUN
gs-1180	82	16	of	of	ADP
gs-1180	82	17	ge	ge	PROPN
gs-1180	82	18	atoms	atom	NOUN
gs-1180	82	19	,	,	PUNCT
gs-1180	82	20	with	with	ADP
gs-1180	82	21	different	different	ADJ
gs-1180	82	22	lattice	lattice	NOUN
gs-1180	82	23	parameters	parameter	NOUN
gs-1180	82	24	and	and	CCONJ
gs-1180	82	25	localized	localized	ADJ
gs-1180	82	26	stress	stress	NOUN
gs-1180	82	27	fields	field	NOUN
gs-1180	82	28	.	.	PUNCT
gs-1180	83	1	under	under	ADP
gs-1180	83	2	such	such	ADJ
gs-1180	83	3	conditions	condition	NOUN
gs-1180	83	4	,	,	PUNCT
gs-1180	83	5	the	the	DET
gs-1180	83	6	lifetime	lifetime	NOUN
gs-1180	83	7	of	of	ADP
gs-1180	83	8	charge	charge	NOUN
gs-1180	83	9	-	-	PUNCT
gs-1180	83	10	carrying	carry	VERB
gs-1180	83	11	electrons	electron	NOUN
gs-1180	83	12	varies	vary	VERB
gs-1180	83	13	over	over	ADP
gs-1180	83	14	a	a	DET
gs-1180	83	15	wide	wide	ADJ
gs-1180	83	16	range	range	NOUN
gs-1180	83	17	,	,	PUNCT
gs-1180	83	18	even	even	ADV
gs-1180	83	19	a	a	DET
gs-1180	83	20	small	small	ADJ
gs-1180	83	21	change	change	NOUN
gs-1180	83	22	in	in	ADP
gs-1180	83	23	which	which	PRON
gs-1180	83	24	significantly	significantly	ADV
gs-1180	83	25	changes	change	VERB
gs-1180	83	26	the	the	DET
gs-1180	83	27	magnitude	magnitude	NOUN
gs-1180	83	28	of	of	ADP
gs-1180	83	29	the	the	DET
gs-1180	83	30	mobility	mobility	NOUN
gs-1180	83	31	.	.	PUNCT
gs-1180	84	1	on	on	ADP
gs-1180	84	2	the	the	DET
gs-1180	84	3	other	other	ADJ
gs-1180	84	4	hand	hand	NOUN
gs-1180	84	5	,	,	PUNCT
gs-1180	84	6	in	in	ADP
gs-1180	84	7	the	the	DET
gs-1180	84	8	deformed	deform	VERB
gs-1180	84	9	areas	area	NOUN
gs-1180	84	10	with	with	ADP
gs-1180	84	11	a	a	DET
gs-1180	84	12	high	high	ADJ
gs-1180	84	13	content	content	NOUN
gs-1180	84	14	of	of	ADP
gs-1180	84	15	ge	ge	PROPN
gs-1180	84	16	,	,	PUNCT
gs-1180	84	17	new	new	ADJ
gs-1180	84	18	energetic	energetic	ADJ
gs-1180	84	19	states	state	NOUN
gs-1180	84	20	are	be	AUX
gs-1180	84	21	realized	realize	VERB
gs-1180	84	22	for	for	ADP
gs-1180	84	23	the	the	DET
gs-1180	84	24	transformation	transformation	NOUN
gs-1180	84	25	of	of	ADP
gs-1180	84	26	radiation	radiation	NOUN
gs-1180	84	27	defects	defect	NOUN
gs-1180	84	28	.	.	PUNCT
gs-1180	85	1	in	in	ADP
gs-1180	85	2	particular	particular	ADJ
gs-1180	85	3	,	,	PUNCT
gs-1180	85	4	it	it	PRON
gs-1180	85	5	is	be	AUX
gs-1180	85	6	possible	possible	ADJ
gs-1180	85	7	to	to	PART
gs-1180	85	8	accelerate	accelerate	VERB
gs-1180	85	9	the	the	DET
gs-1180	85	10	formation	formation	NOUN
gs-1180	85	11	and	and	CCONJ
gs-1180	85	12	dissociation	dissociation	NOUN
gs-1180	85	13	of	of	ADP
gs-1180	85	14	a	a	DET
gs-1180	85	15	-	-	PUNCT
gs-1180	85	16	centers	center	NOUN
gs-1180	85	17	,	,	PUNCT
gs-1180	85	18	as	as	ADV
gs-1180	85	19	well	well	ADV
gs-1180	85	20	as	as	ADP
gs-1180	85	21	changes	change	NOUN
gs-1180	85	22	in	in	ADP
gs-1180	85	23	electronic	electronic	ADJ
gs-1180	85	24	states	state	NOUN
gs-1180	85	25	based	base	VERB
gs-1180	85	26	on	on	ADP
gs-1180	85	27	configurational	configurational	ADJ
gs-1180	85	28	changes	change	NOUN
gs-1180	85	29	of	of	ADP
gs-1180	85	30	divacancies	divacancie	NOUN
gs-1180	85	31	and	and	CCONJ
gs-1180	85	32	e	e	NOUN
gs-1180	85	33	-	-	NOUN
gs-1180	85	34	centers	center	NOUN
gs-1180	85	35	related	relate	VERB
gs-1180	85	36	to	to	ADP
gs-1180	85	37	p	p	NOUN
gs-1180	85	38	-	-	PUNCT
gs-1180	85	39	v	v	NOUN
gs-1180	85	40	complexes	complex	NOUN
gs-1180	85	41	.	.	PUNCT
gs-1180	86	1	the	the	DET
gs-1180	86	2	formation	formation	NOUN
gs-1180	86	3	of	of	ADP
gs-1180	86	4	dielectric	dielectric	ADJ
gs-1180	86	5	areas	area	NOUN
gs-1180	86	6	is	be	AUX
gs-1180	86	7	not	not	PART
gs-1180	86	8	excluded	exclude	VERB
gs-1180	86	9	,	,	PUNCT
gs-1180	86	10	which	which	PRON
gs-1180	86	11	is	be	AUX
gs-1180	86	12	indicated	indicate	VERB
gs-1180	86	13	by	by	ADP
gs-1180	86	14	the	the	DET
gs-1180	86	15	increase	increase	NOUN
gs-1180	86	16	in	in	ADP
gs-1180	86	17	the	the	DET
gs-1180	86	18	shape	shape	NOUN
gs-1180	86	19	of	of	ADP
gs-1180	86	20	the	the	DET
gs-1180	86	21	peak	peak	NOUN
gs-1180	86	22	of	of	ADP
gs-1180	86	23	electrical	electrical	ADJ
gs-1180	86	24	resistivity	resistivity	NOUN
gs-1180	86	25	near	near	ADP
gs-1180	86	26	200	200	NUM
gs-1180	86	27	°	°	NOUN
gs-1180	86	28	c	c	NOUN
gs-1180	86	29	temperature	temperature	NOUN
gs-1180	86	30	.	.	PUNCT
gs-1180	87	1	in	in	ADP
gs-1180	87	2	the	the	DET
gs-1180	87	3	areas	area	NOUN
gs-1180	87	4	of	of	ADP
gs-1180	87	5	high	high	ADJ
gs-1180	87	6	ge	ge	PROPN
gs-1180	87	7	content	content	PROPN
gs-1180	87	8	,	,	PUNCT
gs-1180	87	9	at	at	ADP
gs-1180	87	10	elevated	elevated	ADJ
gs-1180	87	11	temperatures	temperature	NOUN
gs-1180	87	12	,	,	PUNCT
gs-1180	87	13	the	the	DET
gs-1180	87	14	vacancy	vacancy	NOUN
gs-1180	87	15	and	and	CCONJ
gs-1180	87	16	internodal	internodal	ADJ
gs-1180	87	17	type	type	NOUN
gs-1180	87	18	dielectric	dielectric	NOUN
gs-1180	87	19	and	and	CCONJ
gs-1180	87	20	metallic	metallic	ADJ
gs-1180	87	21	dispersed	disperse	VERB
gs-1180	87	22	inclusions	inclusion	NOUN
gs-1180	87	23	intensively	intensively	ADV
gs-1180	87	24	interact	interact	VERB
gs-1180	87	25	with	with	ADP
gs-1180	87	26	each	each	DET
gs-1180	87	27	other	other	ADJ
gs-1180	87	28	.	.	PUNCT
gs-1180	88	1	first	first	ADV
gs-1180	88	2	of	of	ADP
gs-1180	88	3	all	all	PRON
gs-1180	88	4	,	,	PUNCT
gs-1180	88	5	the	the	DET
gs-1180	88	6	vacancy	vacancy	NOUN
gs-1180	88	7	origin	origin	NOUN
gs-1180	88	8	inclusions	inclusion	NOUN
gs-1180	88	9	are	be	AUX
gs-1180	88	10	suppressed	suppress	VERB
gs-1180	88	11	.	.	PUNCT
gs-1180	89	1	dissociation	dissociation	NOUN
gs-1180	89	2	products	product	NOUN
gs-1180	89	3	are	be	AUX
gs-1180	89	4	associated	associate	VERB
gs-1180	89	5	with	with	ADP
gs-1180	89	6	components	component	NOUN
gs-1180	89	7	of	of	ADP
gs-1180	89	8	internodal	internodal	ADJ
gs-1180	89	9	complexes	complex	NOUN
gs-1180	89	10	.	.	PUNCT
gs-1180	90	1	such	such	ADJ
gs-1180	90	2	changes	change	NOUN
gs-1180	90	3	reduce	reduce	VERB
gs-1180	90	4	the	the	DET
gs-1180	90	5	intensity	intensity	NOUN
gs-1180	90	6	of	of	ADP
gs-1180	90	7	electron	electron	NOUN
gs-1180	90	8	scattering	scattering	NOUN
gs-1180	90	9	and	and	CCONJ
gs-1180	90	10	lead	lead	VERB
gs-1180	90	11	to	to	ADP
gs-1180	90	12	the	the	DET
gs-1180	90	13	tendency	tendency	NOUN
gs-1180	90	14	to	to	PART
gs-1180	90	15	increase	increase	VERB
gs-1180	90	16	the	the	DET
gs-1180	90	17	mobility	mobility	NOUN
gs-1180	90	18	to	to	ADP
gs-1180	90	19	the	the	DET
gs-1180	90	20	initial	initial	ADJ
gs-1180	90	21	level	level	NOUN
gs-1180	90	22	.	.	PUNCT
gs-1180	91	1	in	in	ADP
gs-1180	91	2	the	the	DET
gs-1180	91	3	experimental	experimental	ADJ
gs-1180	91	4	n	n	CCONJ
gs-1180	91	5	-	-	PUNCT
gs-1180	91	6	sige	sige	ADJ
gs-1180	91	7	alloy	alloy	NOUN
gs-1180	91	8	,	,	PUNCT
gs-1180	91	9	the	the	DET
gs-1180	91	10	high	high	ADJ
gs-1180	91	11	concentration	concentration	NOUN
gs-1180	91	12	of	of	ADP
gs-1180	91	13	ge	ge	PROPN
gs-1180	91	14	(	(	PUNCT
gs-1180	91	15	~4	~4	PROPN
gs-1180	91	16	at.%ge	at.%ge	PROPN
gs-1180	91	17	)	)	PUNCT
gs-1180	91	18	and	and	CCONJ
gs-1180	91	19	the	the	DET
gs-1180	91	20	increased	increase	VERB
gs-1180	91	21	concentration	concentration	NOUN
gs-1180	91	22	of	of	ADP
gs-1180	91	23	phosphorus	phosphorus	NOUN
gs-1180	91	24	(	(	PUNCT
gs-1180	91	25	1013–1014cm-3	1013–1014cm-3	NUM
gs-1180	91	26	)	)	PUNCT
gs-1180	91	27	create	create	VERB
gs-1180	91	28	additional	additional	ADJ
gs-1180	91	29	opportunities	opportunity	NOUN
gs-1180	91	30	for	for	ADP
gs-1180	91	31	zigzagging	zigzag	VERB
gs-1180	91	32	changes	change	NOUN
gs-1180	91	33	of	of	ADP
gs-1180	91	34	zone	zone	NOUN
gs-1180	91	35	electron	electron	NOUN
gs-1180	91	36	mobility	mobility	NOUN
gs-1180	91	37	.	.	PUNCT
gs-1180	92	1	in	in	ADP
gs-1180	92	2	particular	particular	ADJ
gs-1180	92	3	,	,	PUNCT
gs-1180	92	4	georgian	georgian	ADJ
gs-1180	92	5	scientists/ქართველი	scientists/ქართველი	NOUN
gs-1180	92	6	მეცნიერები	მეცნიერები	NOUN
gs-1180	92	7	ტ.	ტ.	VERB
gs-1180	92	8	4	4	NUM
gs-1180	92	9	n	n	PRON
gs-1180	92	10	3	3	NUM
gs-1180	92	11	,	,	PUNCT
gs-1180	92	12	2022	2022	NUM
gs-1180	92	13	328	328	NUM
gs-1180	92	14	according	accord	VERB
gs-1180	92	15	to	to	ADP
gs-1180	92	16	literature	literature	NOUN
gs-1180	92	17	,	,	PUNCT
gs-1180	92	18	in	in	ADP
gs-1180	92	19	the	the	DET
gs-1180	92	20	vicinity	vicinity	NOUN
gs-1180	92	21	of	of	ADP
gs-1180	92	22	150	150	NUM
gs-1180	92	23	and	and	CCONJ
gs-1180	92	24	300	300	NUM
gs-1180	92	25	°	°	NOUN
gs-1180	92	26	c	c	NOUN
gs-1180	92	27	temperatures	temperature	NOUN
gs-1180	92	28	two	two	NUM
gs-1180	92	29	-	-	PUNCT
gs-1180	92	30	step	step	NOUN
gs-1180	92	31	annealing	annealing	NOUN
gs-1180	92	32	of	of	ADP
gs-1180	92	33	cics	cic	NOUN
gs-1180	92	34	complexes	complex	NOUN
gs-1180	92	35	takes	take	VERB
gs-1180	92	36	place	place	NOUN
gs-1180	92	37	,	,	PUNCT
gs-1180	92	38	while	while	SCONJ
gs-1180	92	39	at	at	ADP
gs-1180	92	40	350	350	NUM
gs-1180	92	41	°	°	NOUN
gs-1180	92	42	c	c	NOUN
gs-1180	92	43	the	the	DET
gs-1180	92	44	a	a	PRON
gs-1180	92	45	-	-	PUNCT
gs-1180	92	46	centers	center	NOUN
gs-1180	92	47	are	be	AUX
gs-1180	92	48	practically	practically	ADV
gs-1180	92	49	completely	completely	ADV
gs-1180	92	50	annealed	anneal	VERB
gs-1180	92	51	.	.	PUNCT
gs-1180	93	1	these	these	DET
gs-1180	93	2	processes	process	NOUN
gs-1180	93	3	are	be	AUX
gs-1180	93	4	accompanied	accompany	VERB
gs-1180	93	5	by	by	ADP
gs-1180	93	6	zigzag	zigzag	NOUN
gs-1180	93	7	changes	change	NOUN
gs-1180	93	8	in	in	ADP
gs-1180	93	9	the	the	DET
gs-1180	93	10	concentration	concentration	NOUN
gs-1180	93	11	of	of	ADP
gs-1180	93	12	zone	zone	NOUN
gs-1180	93	13	electrons	electron	NOUN
gs-1180	93	14	and	and	CCONJ
gs-1180	93	15	,	,	PUNCT
gs-1180	93	16	accordingly	accordingly	ADV
gs-1180	93	17	,	,	PUNCT
gs-1180	93	18	their	their	PRON
gs-1180	93	19	mobility	mobility	NOUN
gs-1180	93	20	.	.	PUNCT
gs-1180	94	1	references	reference	NOUN
gs-1180	94	2	1	1	NUM
gs-1180	94	3	.	.	PUNCT
gs-1180	94	4	londos	londos	PROPN
gs-1180	94	5	c.	c.	PROPN
gs-1180	94	6	a.	a.	PROPN
gs-1180	94	7	,	,	PUNCT
gs-1180	94	8	sgourou	sgourou	PROPN
gs-1180	94	9	e.	e.	PROPN
gs-1180	94	10	n.	n.	PROPN
gs-1180	94	11	,	,	PUNCT
gs-1180	94	12	hall	hall	PROPN
gs-1180	94	13	d.	d.	PROPN
gs-1180	94	14	,	,	PUNCT
gs-1180	94	15	chroneos	chroneos	PROPN
gs-1180	94	16	a.	a.	PROPN
gs-1180	94	17	,	,	PUNCT
gs-1180	94	18	vacancy	vacancy	NOUN
gs-1180	94	19	-	-	PUNCT
gs-1180	94	20	oxygen	oxygen	NOUN
gs-1180	94	21	defects	defect	NOUN
gs-1180	94	22	in	in	ADP
gs-1180	94	23	silicon	silicon	NOUN
gs-1180	94	24	:	:	PUNCT
gs-1180	94	25	the	the	DET
gs-1180	94	26	impact	impact	NOUN
gs-1180	94	27	of	of	ADP
gs-1180	94	28	isovalent	isovalent	ADJ
gs-1180	94	29	doping	doping	NOUN
gs-1180	94	30	,	,	PUNCT
gs-1180	94	31	j.	j.	PROPN
gs-1180	94	32	mater	mater	PROPN
gs-1180	94	33	sci	sci	PROPN
gs-1180	94	34	:	:	PUNCT
gs-1180	94	35	mater	mater	NOUN
gs-1180	94	36	electron	electron	PROPN
gs-1180	94	37	,	,	PUNCT
gs-1180	94	38	2014	2014	NUM
gs-1180	94	39	,	,	PUNCT
gs-1180	94	40	№	№	ADV
gs-1180	94	41	25	25	NUM
gs-1180	94	42	,	,	PUNCT
gs-1180	94	43	p.2395–2410	p.2395–2410	NOUN
gs-1180	94	44	.	.	PUNCT
gs-1180	95	1	2	2	X
gs-1180	95	2	.	.	X
gs-1180	95	3	londos	londos	PROPN
gs-1180	95	4	c.a	c.a	PROPN
gs-1180	95	5	.	.	PROPN
gs-1180	95	6	,	,	PUNCT
gs-1180	95	7	andrianakis	andrianakis	PROPN
gs-1180	95	8	a.	a.	NOUN
gs-1180	95	9	,	,	PUNCT
gs-1180	95	10	emtsev	emtsev	NOUN
gs-1180	95	11	v.	v.	PROPN
gs-1180	95	12	,	,	PUNCT
gs-1180	95	13	ohyama	ohyama	PROPN
gs-1180	95	14	h.	h.	PROPN
gs-1180	95	15	,	,	PUNCT
gs-1180	95	16	radiation	radiation	NOUN
gs-1180	95	17	-	-	PUNCT
gs-1180	95	18	induced	induce	VERB
gs-1180	95	19	defects	defect	NOUN
gs-1180	95	20	in	in	ADP
gs-1180	95	21	czochralski	czochralski	NOUN
gs-1180	95	22	-	-	PUNCT
gs-1180	95	23	grown	grow	VERB
gs-1180	95	24	silicon	silicon	NOUN
gs-1180	95	25	containing	contain	VERB
gs-1180	95	26	carbon	carbon	NOUN
gs-1180	95	27	and	and	CCONJ
gs-1180	95	28	germanium	germanium	NOUN
gs-1180	95	29	,	,	PUNCT
gs-1180	95	30	semicond	semicond	PROPN
gs-1180	95	31	.	.	PUNCT
gs-1180	96	1	sci	sci	PROPN
gs-1180	96	2	.	.	PROPN
gs-1180	96	3	technol	technol	PROPN
gs-1180	96	4	.	.	PROPN
gs-1180	96	5	,	,	PUNCT
gs-1180	96	6	2009	2009	NUM
gs-1180	96	7	,	,	PUNCT
gs-1180	96	8	vol	vol	NOUN
gs-1180	96	9	.	.	PROPN
gs-1180	96	10	24	24	NUM
gs-1180	96	11	,	,	PUNCT
gs-1180	96	12	№	№	NOUN
gs-1180	96	13	075002	075002	NUM
gs-1180	96	14	,	,	PUNCT
gs-1180	96	15	p.1	p.1	NOUN
gs-1180	96	16	-	-	SYM
gs-1180	96	17	7	7	NUM
gs-1180	96	18	.	.	NOUN
gs-1180	97	1	3	3	NUM
gs-1180	97	2	.	.	X
gs-1180	97	3	chroneos	chroneos	PROPN
gs-1180	97	4	a.	a.	PROPN
gs-1180	97	5	,	,	PUNCT
gs-1180	97	6	sgourou	sgourou	PROPN
gs-1180	97	7	e.	e.	PROPN
gs-1180	97	8	n.	n.	PROPN
gs-1180	97	9	,	,	PUNCT
gs-1180	97	10	londos	londos	PROPN
gs-1180	97	11	c.	c.	PROPN
gs-1180	97	12	a.	a.	PROPN
gs-1180	97	13	,	,	PUNCT
gs-1180	97	14	schwingenschlögl	schwingenschlögl	PROPN
gs-1180	97	15	u.	u.	PROPN
gs-1180	97	16	,	,	PUNCT
gs-1180	97	17	oxygen	oxygen	NOUN
gs-1180	97	18	defect	defect	NOUN
gs-1180	97	19	processes	process	NOUN
gs-1180	97	20	in	in	ADP
gs-1180	97	21	silicon	silicon	NOUN
gs-1180	97	22	and	and	CCONJ
gs-1180	97	23	silicon	silicon	NOUN
gs-1180	97	24	germanium	germanium	NOUN
gs-1180	97	25	,	,	PUNCT
gs-1180	97	26	applied	apply	VERB
gs-1180	97	27	physics	physics	NOUN
gs-1180	97	28	reviews	review	NOUN
gs-1180	97	29	,	,	PUNCT
gs-1180	97	30	2015	2015	NUM
gs-1180	97	31	,	,	PUNCT
gs-1180	97	32	№	№	ADP
gs-1180	97	33	2	2	NUM
gs-1180	97	34	,	,	PUNCT
gs-1180	97	35	p.021306	p.021306	NOUN
gs-1180	97	36	-	-	PUNCT
gs-1180	97	37	1	1	NUM
gs-1180	97	38	–	–	PUNCT
gs-1180	97	39	02130616	02130616	NUM
gs-1180	97	40	.	.	PUNCT
gs-1180	98	1	რადიაციული	რადიაციული	PROPN
gs-1180	98	2	დეფექტების	დეფექტების	PROPN
gs-1180	98	3	ჩასახვისა	ჩასახვისა	PROPN
gs-1180	98	4	და	და	PROPN
gs-1180	98	5	მოწვის	მოწვის	PROPN
gs-1180	98	6	პროცესების	პროცესების	PROPN
gs-1180	98	7	თავისებურებანი	თავისებურებანი	NOUN
gs-1180	98	8	მონოკრისტალურ	მონოკრისტალურ	CCONJ
gs-1180	98	9	n	n	CCONJ
gs-1180	98	10	-	-	PUNCT
gs-1180	98	11	si+4ატ.%ge	si+4ატ.%ge	NOUN
gs-1180	98	12	:p	:p	NOUN
gs-1180	98	13	შენადნობში	შენადნობში	NOUN
gs-1180	98	14	ია	ია	ADP
gs-1180	98	15	ყურაშვილი1	ყურაშვილი1	NOUN
gs-1180	98	16	,	,	PUNCT
gs-1180	98	17	თორნიკე	თორნიკე	PROPN
gs-1180	98	18	ქიმერიძე1,2	ქიმერიძე1,2	PROPN
gs-1180	98	19	,	,	PUNCT
gs-1180	98	20	კახაბერ	კახაბერ	ADJ
gs-1180	98	21	შამათავა1	შამათავა1	PROPN
gs-1180	98	22	,	,	PUNCT
gs-1180	98	23	ავთანდილ	ავთანდილ	PROPN
gs-1180	98	24	სიჭინავა1	სიჭინავა1	PROPN
gs-1180	98	25	,	,	PUNCT
gs-1180	98	26	გიორგი	გიორგი	VERB
gs-1180	98	27	დარსაველიძე	დარსაველიძე	ADV
gs-1180	98	28	1	1	NUM
gs-1180	98	29	1	1	NUM
gs-1180	98	30	სსიპ	სსიპ	NOUN
gs-1180	98	31	სოხუმის	სოხუმის	PROPN
gs-1180	98	32	ილია	ილია	PROPN
gs-1180	98	33	ვეკუას	ვეკუას	ADJ
gs-1180	98	34	ფიზიკა-ტექნიკის	ფიზიკა-ტექნიკის	ADJ
gs-1180	98	35	ინსტიტუტი	ინსტიტუტი	NOUN
gs-1180	98	36	2	2	NUM
gs-1180	98	37	სსიპ	სსიპ	NOUN
gs-1180	98	38	დავით	დავით	PROPN
gs-1180	98	39	აღმაშენებლის	აღმაშენებლის	PROPN
gs-1180	98	40	სახელობის	სახელობის	PROPN
gs-1180	98	41	საქართველოს	საქართველოს	NOUN
gs-1180	98	42	ეროვნული	ეროვნული	VERB
gs-1180	98	43	თავდაცვის	თავდაცვის	NOUN
gs-1180	98	44	აკადემია	აკადემია	VERB
gs-1180	98	45	აბსტრაქტი.	აბსტრაქტი.	ADJ
gs-1180	98	46	შესწავლილია	შესწავლილია	ADJ
gs-1180	98	47	60co	60co	PROPN
gs-1180	98	48	გამა-ფოტონებით	გამა-ფოტონებით	ADJ
gs-1180	98	49	დასხივების	დასხივების	ADJ
gs-1180	98	50	გავლენა	გავლენა	ADJ
gs-1180	98	51	მაღალი	მაღალი	PROPN
gs-1180	98	52	კონცენტრაციით	კონცენტრაციით	ADJ
gs-1180	98	53	გერმანიუმის	გერმანიუმის	PROPN
gs-1180	98	54	შემცველ	შემცველ	NOUN
gs-1180	98	55	მონოკრისტალურ	მონოკრისტალურ	CCONJ
gs-1180	98	56	n	n	CCONJ
gs-1180	98	57	-	-	PUNCT
gs-1180	98	58	si+4ატ.%ge	si+4ატ.%ge	NOUN
gs-1180	98	59	:p	:p	NOUN
gs-1180	98	60	შენადნობში	შენადნობში	PROPN
gs-1180	98	61	რადიაციული	რადიაციული	PROPN
gs-1180	98	62	დეფექტების	დეფექტების	PROPN
gs-1180	98	63	ჩასახვისა	ჩასახვისა	NOUN
gs-1180	98	64	და	და	PROPN
gs-1180	98	65	იზოქრონულად	იზოქრონულად	ADJ
gs-1180	98	66	მოწვების	მოწვების	PROPN
gs-1180	98	67	პროცესებზე.	პროცესებზე.	NOUN
gs-1180	98	68	საცდელი	საცდელი	PROPN
gs-1180	98	69	მოცულობითი	მოცულობითი	NOUN
gs-1180	98	70	კრისტალები	კრისტალები	VERB
gs-1180	98	71	მიღებულია	მიღებულია	ADJ
gs-1180	98	72	ჩოხრალსკის	ჩოხრალსკის	VERB
gs-1180	98	73	მეთოდით	მეთოდით	PROPN
gs-1180	98	74	არგონის	არგონის	PROPN
gs-1180	98	75	ატმოსფეროში.	ატმოსფეროში.	PROPN
gs-1180	98	76	ელექტროფიზიკური	ელექტროფიზიკური	PROPN
gs-1180	98	77	მახასიათებლები	მახასიათებლები	PROPN
gs-1180	98	78	განსაზღვრული	განსაზღვრული	PROPN
gs-1180	98	79	იქნა	იქნა	NOUN
gs-1180	98	80	მუდმივ	მუდმივ	PROPN
gs-1180	98	81	მაგნიტურ	მაგნიტურ	PROPN
gs-1180	98	82	ველში	ველში	PROPN
gs-1180	98	83	ჰოლის	ჰოლის	PROPN
gs-1180	98	84	კოეფიციენტის	კოეფიციენტის	ADV
gs-1180	98	85	გაზომვებით	გაზომვებით	PROPN
gs-1180	98	86	20	20	NUM
gs-1180	98	87	-	-	SYM
gs-1180	98	88	400	400	NUM
gs-1180	98	89	°	°	NOUN
gs-1180	98	90	c	c	NOUN
gs-1180	98	91	ტემპერატურულ	ტემპერატურულ	NOUN
gs-1180	98	92	ინტერვალში	ინტერვალში	VERB
gs-1180	98	93	20-წუთიანი	20-წუთიანი	NUM
gs-1180	98	94	იზოქრონული	იზოქრონული	NOUN
gs-1180	98	95	მოწვების	მოწვების	ADJ
gs-1180	98	96	სხვადასხვა	სხვადასხვა	PROPN
gs-1180	98	97	ეტაპზე.	ეტაპზე.	NOUN
gs-1180	98	98	დადგენილია	დადგენილია	VERB
gs-1180	98	99	,	,	PUNCT
gs-1180	98	100	რომ	რომ	PROPN
gs-1180	98	101	საცდელი	საცდელი	PROPN
gs-1180	98	102	sige	sige	PROPN
gs-1180	98	103	შენადნობის	შენადნობის	PROPN
gs-1180	98	104	კრისტალურ	კრისტალურ	VERB
gs-1180	98	105	მესერში	მესერში	PROPN
gs-1180	98	106	გერმანიუმის	გერმანიუმის	PROPN
gs-1180	98	107	ატომებთან	ატომებთან	ADJ
gs-1180	98	108	ლოკალიზებული	ლოკალიზებული	PROPN
gs-1180	98	109	შემკუმშავი	შემკუმშავი	PROPN
gs-1180	98	110	ძაბვების	ძაბვების	PROPN
gs-1180	98	111	გავლენით	გავლენით	PROPN
gs-1180	98	112	ადგილი	ადგილი	NOUN
gs-1180	98	113	აქვს	აქვს	PROPN
gs-1180	98	114	რადიაციული	რადიაციული	PROPN
gs-1180	98	115	a-ცენტრების	a-ცენტრების	PROPN
gs-1180	98	116	(	(	PUNCT
gs-1180	98	117	vo	vo	NOUN
gs-1180	98	118	)	)	PUNCT
gs-1180	98	119	მოწვის	მოწვის	PROPN
gs-1180	98	120	ტემპერატურის	ტემპერატურის	PROPN
gs-1180	98	121	შემცირებას.	შემცირებას.	PROPN
gs-1180	99	1	გამოვლენილია	გამოვლენილია	VERB
gs-1180	99	2	რადიაციული	რადიაციული	PROPN
gs-1180	99	3	e-ცენტრების	e-ცენტრების	PROPN
gs-1180	99	4	(	(	PUNCT
gs-1180	99	5	pv	pv	NOUN
gs-1180	99	6	)	)	PUNCT
gs-1180	99	7	დისოციაციის	დისოციაციის	NOUN
gs-1180	99	8	ტემპერატურის	ტემპერატურის	PROPN
gs-1180	99	9	ცვლილება	ცვლილება	PROPN
gs-1180	99	10	,	,	PUNCT
gs-1180	99	11	განპირობებული	განპირობებული	PROPN
gs-1180	99	12	მათი	მათი	PROPN
gs-1180	99	13	მიმართული	მიმართული	PROPN
gs-1180	99	14	მიგრაციით	მიგრაციით	VERB
gs-1180	99	15	დისლოკაციებთან	დისლოკაციებთან	ADJ
gs-1180	99	16	ლოკალიზებული	ლოკალიზებული	ADV
gs-1180	99	17	ძაბვების	ძაბვების	NOUN
gs-1180	99	18	ველში.	ველში.	VERB
gs-1180	99	19	საკვანძო	საკვანძო	PROPN
gs-1180	99	20	სიტყვები	სიტყვები	NOUN
gs-1180	99	21	:	:	PUNCT
gs-1180	99	22	sige	sige	ADJ
gs-1180	99	23	შენადნობი	შენადნობი	NOUN
gs-1180	99	24	,	,	PUNCT
gs-1180	99	25	რადიაციული	რადიაციული	PROPN
gs-1180	99	26	დეფექტი	დეფექტი	ADJ
gs-1180	99	27	,	,	PUNCT
gs-1180	99	28	გამა-ფოტონები	გამა-ფოტონები	NOUN
gs-1180	99	29	,	,	PUNCT
gs-1180	99	30	იზოქრონული	იზოქრონული	ADJ
gs-1180	99	31	მოწვა.	მოწვა.	NOUN