Georgian Scientists/ . 6 N 1, 2024 167 Georgian Scientists Vol. 6 Issue 1, 2024 https://doi.org/10.52340/gs.2024.06.01.23 60Co SiGe:P , , , , , , , , 5.1016 -2 60Co Si+1,5 .%Ge:P (1015 -3) 1 . . . . SiGe . : SiGe , , , , , . Si-Ge . 1019-1020 -3 Si-Ge . Si- , [1]. Si-Ge Georgian Scientists/ . 6 N 1, 2024 168 . Si-Ge , , , [2]. Si-Ge : Ge-Ge, Ge-Si Si-Si. [3]. , . Si-Ge Si Ge [4]. Si-Ge - . Si- Si-Ge - . Si-Ge Ge- (0-5 .%) , 4%- , . . (105 -2) , . Si-Ge [5]. 0-5 % Si-Ge . Si-Ge , [6]. Georgian Scientists/ . 6 N 1, 2024 169 , , . . [111] Si+1,5 %Ge:P(1015 -3) . . , . (111) NMM-80RF/TRF. 0,5-5,0 10-5-10-3 20-900ºC . (111) Ecopia HMS-3000 . , Si-Ge (111) 5.104 2. . . , 10-15% . . 5.1016 -2 ( .1). [111] Si+2%Ge:P (1015 -3) 1 Si+1,5%Ge:P , . , -3 , 2 . , -2 , 2 14,5 1.1015 430 4.104 4550 20,7 7.1014 380 5.104 4780 Georgian Scientists/ . 6 N 1, 2024 170 , . , . Si-Ge 1,4- . Ge-Ge Si-Ge . , . . SiGe ( .1). .1. Si+2%Ge:P (1015 -3) . 1. , f0=1,4 .; 2. 5.1016 -2 60Co , f0=1,5 .; SiGe:P (0,6 x0,6 x30 3) (111) 1,5 2.10-5 5 . 400, 510, 600-610, 700ºC. Georgian Scientists/ . 6 N 1, 2024 171 780-800ºC . , . . : = . . [7] K h , Tmax fmax - . : = 1 2 . = 1 [7], = 2 . . 2- . SiGe:P 2 Si+1,5%Ge:P , ºC , . , -1 , 2 400 500 600-610 700 1,50 1,65 1,80 2,0-2,10 2.1012 4.1011 3,5.1012 4.1011 4550 5.1016 -2 300 420 510 620 715 1,35 1,55 1,70 1,85 2,10 5.1012 1.1012 9.1011 1,2.1011 2.1011 4700 . Georgian Scientists/ . 6 N 1, 2024 172 . 2 . . 10-15%- , . . , , 10-5 - 10-3 15 -20%- . . . 5-10 . , , 8-12 % - . . 5.1016 -2 , , , 300ºC ( .1.2). (10-5-10-4), , . , , . . , . 2 , , 1010-1012 -1 . Georgian Scientists/ . 6 N 1, 2024 173 . SiGe 300°C , Si1-xGex(x 0,2) . . , 300°C . , 380-300°C . Si-Ge , , , . 300°C . , . , . ( .2). , . . . . , . . . Georgian Scientists/ . 6 N 1, 2024 174 .2. Si+1,5%Ge:P (1015 -3) . 1. , f0=1,4 .; 2. 5.1016 -2 60Co , f0=1,5 . , , 5.1016 -2 60Co SiGe , . 300°C . . (~1,35 , 5.1012 -1) 60- VO ( ) . Si1- xGex (x 0,05) 1014 -2 5.1012 -2 [8,9]. SiGe . , SiGe . Si SiGe . „ [FR-22-328. n-SiGe Georgian Scientists/ . 6 N 1, 2024 175 ]“/ „This work was supported by Shota Rustaveli National Science Foundation of Georgia (SRNSFG) [FR-22-328. Peculiarities of irradiation induced changes of electrophysical and inelastic properties of the monocrystalline n-SiGe alloys]“. 1. K.Kinoshita, Y.Arai, T. Maeda, O.Nakatsuka. Si1-xGex bulk single crsyatls for substrates of electronic devices. J. Materials Science in Semiconductor Processing. 70 (2017) pp.12-17. doi: 10.1016/j.mssp.2016.10.012 2. I.Yonenaga, M.Sakurai, M.H.F.Sluiter, Y.Kawazoe, S.Muto. Atomistics structure and strain relaxation in Czochralski-grown SixGe1-x bulk alloys. J. Materials Science:Materials in Electronics 16 (2005) pp. 429-432. doi: 10.1007/s10854-005-2309-1 3. K.Tanaka, M.Suezawa, I.Yonenaga. Photoluminescence Spectra of Deformed Si-Ge alloy. J.Appl. Phys. 80, 12 (1996) pp. 6991-6997 4. J.Weber, M.I.Alonso. Defect Control in Semiconductors, edited by K.Sumino (Elsevier Science, New York, 1990) p.1453. 5. I.Kurashvili, G.Darsavelidze, G.Bokuchava, I.Tabatadze, G.Chubinidze. Influence of Germanium and Boron Doping on Structural and Physical-Mechanical Characteristics of Monocrystalline Silicon . J. International Scientific Publications: Materials, Methods and Technologies. 8, ISSN 1314-7269. (2014). Pp. 298-302. 6. , , . , , . , , . p-SiGe . Georgian Scientists/ , 4 #1, (2022) .65-72. https://doi.org/10.52340/gs.2022.04.01.07 7. M.S. Blanter, I.S.Golovin, H.Neuhauser, H.-R.Sinning. Internal friction in metallic materials. A handbook. Springer Series in Materials Science. vol. 990, 2007, XVII, 539 p. 8. , , , , . p-SiGe . Georgian Scientists/ , 5, #2, (2023) .63-70. https://doi.org/10.52340/gs.2023.05.02.08 9. I. Kurashvili, G. Darsavelidze, T. Kimeridze, I.Tabatadze, T. Melashvili, A. Sichinava, G. Archuadze. Internal friction temperature spectra in electron-irradiated SiGe alloys. Bulletin of the Georgian National Academy of Sciences, vol. 13, no. 3, (2019) pp.43-49. Georgian Scientists/ . 6 N 1, 2024 176 Pecularities of relaxation internal friction in 60Co gamma photons irradiated monocrystalline SiGe:P alloys Ia Kurashvili, Giorgi Darsavelidze, Giorgi Chubinidze, David Mkheidze, Marina Kadaria, Nargiza Gogolashvili, Tatiana Melashvili Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia Abstract. Relaxation process caused by the interaction of radiation defects and dislocations is revelaed in the internal friction temperature spectrum, in the torsion oscillations frequency range of 1 Hz in the monocrystalline Si+2at.%Ge:P (1015cm-3) alloys irradiated with 60Co gamma photons. A tendency to increase the dynamic shear modulus and activation energy of the deformation origin internal friction relaxation maxima has been experimentally established. The possibilities of controlling the mobility of the dislocations surrounded by thermal and radiation defects are shown based on the increase in the absolute value of the shear modulus and the zigzag changes of temperature. The contribution of radiation defects to the radiation hardening of the test sample is analyzed. The obtained results can be applied in the process of development and creation of materials and devices with specific physical- mechanical characteristics based on SiGe alloys. Keywords: SiGe alloys, gamma radiation, relaxation, dislocation structure, activation energy, shear modulus.