Microsoft Word - 41-51 41 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 Study the Effect of Irradiation on Structural and Optical Properties of (CdO) Thin Films that Prepared by Spray Pyrolysis Seham H. S. Ajar Enas Y. A. Ahmad Dept.of Physics/ College of Education for pure sciensce (Ibn Al-Haitham)/ University of Baghdad Esraa A. A. Hussein Dept.of Physics/ College of Education/ University of Al-Mostansiriyah Aeshah A.H. Habib Dept.of Physics/ College of Education for Pure Sciensce (Ibn Al-Haitham)/ University of Baghdad Received in : 5May 2015, Accepted in :23 June 2015 Abstract In this research, the study effect of irradiation on structural and optical properties of thin film (CdO) by spray pyrolysis method, which deposited on glasses substrates at a thickness of (350±20)nm , The flow rate of solution was 5 ml/min and the substrate temperature was held constant at 400˚C.The investigation of (XRD) indicates that the (CdO) films are polycrystalline and type of cubic. The results of the measuring of each sample from grain size, micro strain, dislocation density and number of crystals the grain size decreasing after irradiation with gamma ray from(27.41, 26.29 ,23.63)nm . The absorbance and transmittance spectra have been recorded in the wavelength range (300-1100) nm in order to study the optical properties. the optical band gap for (CdO) decreasing after irradiation with gamma ray from(2.4, 2.35, 2.25)eV with increasing time irradiated, while extinction coefficient, refraction index,the optical conductivity increase after irradiated with gamma ray with increase irradiation time . Cs137 is used to obtain Gamma ray with energy( 662)KeV, activity( 4.3)ci , the irradiation time (1-3)week . Keywords: thin film CdO ,irradiation. 42 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 Introduction Cadmium Oxide is one of the promising transparent conducting oxides (TCOs) from to group of semiconductors [1] and its important material for the development of various technologies of soiled state devise, panel display, optoelectronic components, thermally insulating alas, etc.[2].Cadmium oxide is a transparent oxide the in visible and NIR spectral region. It is n-type semiconducting[3].Therefore it is used in many industrial productions like solar cells, smart windows, flat panel display optical communications, photo-transistors, IR- detectors, storage batteries, ceramic glasses and other optoelectronic applications[4-5]. A variety of methods has been used to prepare thin films of cadmium oxide such thermal evaporation metal organic, chemical bath deposition[6],silar deposition technique[7], rapid thermal oxidation (RTO) of Cd[8],successive ionic layer adsorption and reaction (SILAR) method[9],etc. The effect of radiation onto films represents linear energy transfer (Kev) which is proportional to the square shipment and inversely with the square speed. Due to their small size and light weight have contribute to the current development the filed of electronic digital in addition to the development of space. The effect of irradiation on thin filmsis that it improves the behavior of these membranes where found the optical properties values increased with increasing irradiation dose and that the value of the energy gap less result generate extra energy levels between the valence and conduction bands[10]. Abdulmajed et.al.[11]was studied prepartion of the subjected to Gamma –ray for (5,10)min and(24)h with energy (0.662)MeV. The results, irradiation leads to decrease in energy gap value. Assmaa[10] study effect of radioactive dose foe Alpha- practical, which energy (5.49)MeVon optical properties of(CdO)which prepared by spray pyrolysis. with doses of values (135,410,1100,5500)rad.The results showed decreasing in energy gap and changes in other properties with absorbed dose. Majidet.al.,[1] studied thin films of CdO and 9 % Mg doped CdO doped have been prepared using spray pyrolysis technique. The deposited thin films were exposed to γ - rays. We have studied the transmission, absorptions and absorption coefficient as a function of photon energy before and after irradiation. The aim of this study is fabrication thin film by spray pyrolysis and study effect irradiation Gamma-Ray with different times on structural and optical properties of (CdO) thin films. Experimental Cadmium Oxide (CdO) films were prepared on glass substrates by spray paralyses technique. The spray solution used of 0.1 M of high purity cadmium acetate dissolved in 100 mil distilled water and add two drops Acetic acidin 15 min. The atomization of the solution into a spray of fine droplets was carried out by the nozzle, with the help of compresses air as carrier gas. The flow rat of solution was 5 ml/min  ,spraying  me  was  10  sec  lasted  by  2  minutes to avoid excessive cooling and the substrate temperature was held constant at 400 ˚C using a chrome – alumel thermocouple with the help of a digital millimeter supplied by Pasco. The nozzle to substrate distance was (30) cm and the diameter of nozzle was 0.3 mm. The substrates were cleaned by alcohol and distilled water before coating. Film thickness is determined by the weight – difference method ( t=M/ρA) where A, is the area of the film, M its mass, t its thickness and ρ its density (8.15 g/cm 3). The structural of CdO film was obtained by X- ray diffraction (SHIMADZU Japan) XRD600,wave length 1.5418 A˚ and the optical transmission absorbance of the films were obtained in Ultraviolet/ Visible/ near 43 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 infrared (200-1100)nm using (UV-visible 1800 spectra photometer) . Cs137 used to obtained Gamma ray with energy( 662) KeV , activity ( 4.3)ci, the irradiation time(1-3)week. cadmium oxide are formed on the substrate surface according to the following reaction [12][13] ……………(1) Results and Discussion Fig. 1 shows the X-ray diffraction (XRD) of CdO thin film ,which appear some peaks at 2θ=33.104o ,38.39o, 55.38o the most peak at 33.10o corresponds to (hkl) (111) with cell constant a=4.68Ao and d=2.703Ao .It clearly shows the CdO thin film is a polycrystalline structure and type of cubic, this result is agrees with[11]. The intensity from films has been increased after the process irradiation and became sharper due to crystallinity. The calculated value of the structural parameters, FWHM, interplanar spacings, grain size, strain and number of crystals determined with the use of the following formulas and using the (ASTM) cards- CdO-00-005-0640: 1-The strain(ε) [14]: ε= βcosθ/4............(2) β the full width at half maximum of (111) peak of XRD pattern, and 2θ is the Bragg angle. 2-Dislocation density(): [15] =1/ (G.s) 2…………………………………….(3) G.s:The crystallites size of the grains in the films is estimated using the Sherer formula [16] : G.s=K /cos……………………………….(4) where K is a constant taken to be 0.94, λ the wavelength of X-Ray used (λ=1.54 Å). 4- Number of Crystals (NO)[17]: NO=t/ (G.s)3………….(5) 5- the interplanar spacing(d)[18]: Using the Miller indices of these planes, the lattice parameters a=b =c of the unit cell are evaluated according to the relation:[18] d=a/(h2 +k2+l2)1/2……………………(6) where d is the interplanar spacing, and (hkl) are the Miller indices. These ruslts are shown in table 1and2. The decreases of grain size with increase of time irradiation may be attributed to the improvement of growth crystalline that leads to crystallinity and increases of strain and dislocation density with increase time irradiation that leads to increases structural defect Fig. 2 shows the relation between absorbance and photon energy, we found the increase in  absorption with the increase of photon energy,and increase with increase time irradiation.  because irradiation may increase the number of charge carriers which increases the absorption that is films [19]. Fig. 3 shows the relation between transparent and photon energy, we had found decrease with increase of photon energy. Fig. 4 shows the relation between the absorption coefficient (α) and photon energy, was calculated using the formula[20]: =2.303A/t………………………(7) Where A is the optical absorbance, increasing absorption coefficient value with increase of irradiation time in depended on absorbance  and the absorption edge shifted toward long wavelength region. αhν=B(hν-Eg)r …………………..(8) Eg energy gap ,r is constant debend on kind transparent. 44 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 Fig. 5 shows the relation between(αhν)2and photon energy, we had found the values energy gap decreased from(2.4-2.35-2.25)eV with increase time irradiation with γ - rays due to the increase of the density of localized states in the band gap, which causes a shift to lower values this results agree with results [1],[10],[11]. Fig. 6 shows the relation between extinction coefficient and photon energy . It was found that the increasing at extinction coefficient value with increase time irradiation because of increasing absorption coefficient value with increase of irradiation time in depended on relation (7)and relation(9)[21]. K= ………………(9) Where k is the extinction coefficient which is related to the absorption coefficient and the wavelength. Fig. 7shows the relation between refractive index and photon energy,during our showing to curves we notice that the behavior of curves is the same behavior before and after irradiation refractive index is increasing with increasing of photon energy until it arrives peak at photon energies (2.2-2.6) eV ,then it began to decrease, with increasing it these value decrease with increasing time irradiation reflective index is calculated from relation: [22] n =[ -K2]1/2 - …………(10) Where R:The reflection which calculated from the relation: [18] R + T+ A = 1 ………………………………. (11) Fig. 8 shows the relation between optical conductivity and photon energy,the optical conductivity increase with increasing time irradiation with γ - rays . The optical conductivity was calculated using the relation[23] σ = …………..(12) where c:the velocity of light in space. Conclusion 1. CdO thin film is a polycrystalline structure , the dominant orientation (111) 2.increase intensity with increase irradiation time . 3. after irradiated with gamma ray increase irradiation time refers to the increase in absorption value and decrease in transparent value. 4. the values energy gap decreased with increasing irradiation time. 5. the optical conductivity increase after irradiation with increase irradiation time with γ - rays. References 1.Hassouni,M. H.;Mishjil,K. A.; Chiad, S. S.and Habubi, N. F. (2013) , Effect of Gamma Irradiation on the Optical Properties of Mg doped CdO Thin films deposited by Spray Pyrolysis, International Letters of Chem., Phy. and Astronomy,11 ( 26-37) , ISSN 2299- 3843. 2.Rusu, R.S. and Rusu, G.I.(2004) ,The Hall effect in Cdo:Sn thin films,J. Tomul Xlix, 2, (3-10). 3.Virk, H.S.(2011) ,Effect of 90 Mev carbon ion irradiation on cadmium oxide quantum dots, J.Current science, 100, 10, (1540-1543). 4.Mummoorthi, M.;Anandhan,N., Marimuthu T. , Ravi G. and Suganya T.,(2014) , “An effect of supporting electrolyte based CdO polycrystalline thin film prepared by electrode position method J. Chem Tech Research, 6, 13, (5304-5308). 45 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 5.Zaien, M.;Ahmed,N.M. and Hassan,Z. (2013), Fabrication and characterization of n- CdO:In/p-Si thin film solar cell by Thermal Evaporation in a Vacuum, J.Electron devices, 17, (1457-1464). 6.Ezekoye,B.A.;Ezekoye,V.A.;Offor;P.O.and UtaziS,C.(2013) Sythesis, Structural and optical characterizations of cadmium oxide (CdO) thin films by chemical bath deposition (CBD) technique,J. Academic, 8, 31, (1597-1601). 7.MahaboobBeevia,M.Anusuyab M.and Saravananc V.,(2010) Characterization of CdO thin films prepared by silar deposition technique,J. Chemical engineering and applications,.1, 2, (150-154). 8.Habubi,N.F.;Ismail,R.A.and Ali,A.M.(2012) Photovoltaic properties of CdO/ porous Si heterojunction photo detector,J. College of Education, Al-Mustansiriah, 3, (11-31). 9.Şahin B.,( 2012),Physical properties of nanostructured CdO films from alkaline baths containing sacchar in as additive, J. Chemical engineering and applications, 3, 11, (165-171). مجلة جامعة النھرين ،تأثير التعرض لجسيمات الفا على الخواص البصرية للغشاء الرقيق )٢٠١٢اسماء احمد (عزيز .10 ).٣١- ٢٧، (١٣، ١٠للعلوم، 11.Ibrahim,A.E, Abd-Aljabaar, N.F.and MahmoodK.H. ,(2010) Study effect irradiation by Gamma-Ray on the structural and optical properties of the thin films"J.University of Tikrit, 1, 5, (54-64). 12.SeoD,J., (2004),Structural and optical properties of CdO films deposited by spray pyrolysis,J. Korean Phys. Soc., 45 (6), (1575–1579). 13.Uplane M.D, Kshirsagar P.N., Lokhande B.J.and BhosaleC.H.,(2000)"Characteristic analysis of spray deposited cadmium oxide thin films"Mater. Chem. Phys., 64,( 75–78). 14.SaeedT. and brien P., (1995)” Thin Solid Films”,271, 35. 15.Hussain S.,(2008), "Investigation of structural and optical properties of nanocrystallineZnO" M.Sc. thesis, Linkpoing University. 16.Emmett F.K, (1967) ,"Hand book of X-ray". 17.Dhanam, M.; prabhu,R.R.and Manoj, P.K.(2008) Investigations on chemical bath deposited Cadmium Selenide thin films,J. Materials chemistry and physics, V 107, 289-296. 18. Yousif, M. G.(1989)Solid state physics , 1, University of Baghdadbook. 19.A. Ashour, Turk J Phys 27 (2003) (551-558). 20.Dakhal, A.(2003), Structural and optical properties of evaporated Zn Oxide, Ti oxide and Zn-Ti oxide films, J. Appl. Phys. A, 77,.677. 21.Ilican,S.;Zor,M.;Caglar,Y.and Caglar,M. (2006),Optical characterization of CdZn(S1- xSex)2 thin films deposited by spraypyrolysis method,J.Optica Applicata,7776(1), (29-37). 22.Ashour,A.;Kaid,M.A;El-Sayed, N.Z. and Ibrahim,A.A. (2006),Physical properties of ZnO thin films deposited by spray pyrolysis technique,J.ApplidSurfase Science,252, (7844-7848). 23.Pankove,J.I. (1975) Optical processes in semiconductors, Dover ublications, Inc. New York, 91. 46 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 Table No.(1): Comparison of structural parameters with (ASTM) cards hkl a(ASTM)Ao a(XRD)Ao d(ASTM)Ao d(XRD)Ao2θ(ASTM) 2θ(XRD) Sa (111)4.69 4.694 2.7120 2.71029 33.0013 33.0236 Before (200) 4.6946 2.34902.3473 38.2849 38.3148 (220)4.693 1.661 1.6593 55.258 55.3193 (111)4.682 2.7036 33.1044 after(1week) (200)4.685 2.3427 38.3926 (220)4.688 1.6751 55.386 (111)4.646 2.68238 33.3773 After(3week) (200)4.653 2.32663 38.6686 (220)4.666 1.64983 55.6659 Table No. (2): Comparison of structural parameters, FWHM, grain size, strain and number of Crystals FWHM (rad) FWHM (deg) No*10-3 (nm)-2 η*10-3 (nm)-2 δ*10-3 G.S (nm) Ts. t(nm) Sa.(CdO) 0.0055089 0.3158 16.99 1.33 1.32 27.41 400 350 Before 0.0057427 0.3292 19.26 1.45 1.37 26.29 After(1week) 0.006395 0.3666 26.83 1.79 1.53 23.63 After(3week)                     47 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015                   Figare No.(1) Shows the X-ray diffraction (XRD) for the CdO before and after (rad.)(1,3)week         0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80 90 intensity(CPS) 2θ 0 100 200 300 400 500 0 20 40 60 80 100 Intensity(CP S) 0 100 200 300 400 500 600 700 0 20 40 60 80 100 Intensity(CPS) 2θ 2θ before After (1)week After(3)week 48 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015   Figare No.(2) shows the relation between absorbance and photon energy Figare No.(3) shows the relation between transmition and photon energy Figare No.(4) shows the relation between absorption coefficient and photon energy 0 20 40 60 80 100 1 1.5 2 2.5 3 3.5 A b so rb a n ce A%before A%a er1week A%a er3week 0 10 20 30 40 50 60 70 80 1 1.5 2 2.5 3 3.5 Tr a n sm it io n T%before T%a er1week T%a er3week hν (eV) hν (eV) 0 10000 20000 30000 40000 50000 60000 70000 80000 90000 100000 0 1 2 3 A b so rp ti o n  c o e ff ic ie n t α before α after1week αafter3week hν(eV) 49 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 `Figare No.(5) shows the relation between(αhν)2and photon energy Figare No.(6) show the relation between extinction coefficient and photon energy Figare No.(7) shows the relation between refractive index and photon energy 0 1E+10 2E+10 3E+10 4E+10 5E+10 6E+10 7E+10 8E+10 9E+10 1 1.5 2 2.5 3 3.5 (α h ν )2 (e V .c m ‐1 )2 (α E)^2before (α E)^2after 1week (α E)^2after 3Week hν (eV) 0 0.05 0.1 0.15 0.2 0.25 0.3 1 1.5 2 2.5 3 3.5 e x ti n ct io n  c o e ff ic ie n t Kbefore K a er3week K a er1week hν(eV) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1 1.5 2 2.5 3 3.5 re fr a ct iv e  i n d e x n a er3week n a er1week n before hν(eV) 50 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 Figare No.(8) shows the relation between optical conductivity and photon energy 0 1E+14 2E+14 3E+14 4E+14 5E+14 6E+14 1 1.5 2 2.5 3 3.5 O p ti ca l  co n d u ct iv it y σo.p(befor) σo.p(after)1WEEK σo.p(after)3WEEK hν (eV) 51 | Physics ٢٠١٥) عام 2العدد ( 28مجلة إبن الھيثم للعلوم الصرفة و التطبيقية المجلد Ibn Al-Haitham J. for Pure & Appl. Sci. Vol. 28 (2) 2015 دراسة تاثير التشعيع على الخواص التركيبية والبصرية الغشية اوكسيد المحضرة بطريقة الرش الكيميائي الحراريالكادميوم الرقيقة رسھام حسن سلمان عج ايناس ياسين عبد احمد يزياء / كلية التربية للعلوم الصرفة(ابن الھيثم)/جامعة بغدادفقسم ال اسراء اكرم عباس حسين قسم الفيزياء/ كلية التربية/ الجامعة المستنصرية عائشة علي حسين حبيب التربية للعلوم الصرفة(ابن الھيثم)/جامعة بغداديزياء / كلية فقسم ال ٢٠١٥حزيران ٢٣، قبل في:٢٠١٥ايار ٥استلم في: الخالصة في ھذه البحث تم دراسة تاثير التشعيع على الخواص التركيبية والبصرية الغشية اوكسيد الكادميوم المحضرة ودرجة ml/min 5 ومعدل الرش nm(20±350) , وبسمكبطريقة الرش الكيميائي الحراري على قواعد زجاجية وباستخدام تقنية حيود االشعة السينية وجد ان االغشية ذات تركيب متعدد التبلور ومن النوع C˚ 400 حرارة القاعدة المكعب قد وجد كل من الحجم الحبيبي وتشوه البلورة وكثافة االنخالعات وعدد الطبقات وقد وجد ان الحجم الحبيبي يقل من (27.41, 26.29 ,23.63)nmةل الموجياطوتصاصية والنفاذية ضمن مدى االاالم سجل طيف .بعد التشعيع باشعة كاما تقل بزيادة زمن بعد التشعيع باشعى كاما وقد وجد ان فجوة الطاقة لغرض دراسة الحواص البصرية (300-1100) معامل الخمود ومعامل االنكسار والتوصيلية البصرية تزداد بزيادة بينما ازداد كل من eV(2.25 ,2.35 ,2.4)التشعيع من وكان زمن ) ci(4.3 وبفعالية 662KeVذو طاقة للحصول على اشعة كامااستخدم 137Csالمصدر المشع ،تشعيعزمن ال التشعيع اسبوع وثالثة أسابيع اغشية رقيقة، اوكسيد الكادميوم، تشعيع. الكلمات المفتاحية: