id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
iajs-515	Hachim, Fatin G.; Al-Ansari, Ramiz A.; AL-Lamy, Hussein Kh.	Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction	2017	6	.pdf	application/pdf	1657	84	66	8-Sinha, N.P. and Mirsa, M. (1983),Electrical properties of Si films doped Sb by molecular beam epitaxy, Solid-State Electronics,26 (12):1170 –1180. For Sb films prepared at R.T and Ta=473K with (0.25µm),from Fig (1) showed Sb films as a polycrystalline structure, but peaks intensity in fig(b1)increase with the increase of annealing a temperature caused by elimination of voids and the reduction of dangling bond concentration ( structural defects).	cache/iajs-515.pdf	txt/iajs-515.txt