id	author	title	date	pages	extension	mime	words	sentence	flesch	summary	cache	txt
iajs-820	Shehab, A. A.; Al-Lamy, H. Kh.; Mustafa, M. H.	Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction	2016	7	.pdf	application/pdf	1893	97	62	SCI. VOL.24 (1) 2011 properties of Ge:Sb/Si heterojunction, aluminum [8] were evaporated on the silicon side and Ge:Sb /Si side. Fig.1 shows that XRD pattern recorded on Ge film, coated on slide glass substrate.	cache/iajs-820.pdf	txt/iajs-820.txt