id	sid	tid	token	lemma	pos
iajs-515	1	1	1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	PROPN
iajs-515	1	2	�	�	PROPN
iajs-515	1	3	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	NUM
iajs-515	1	4	:	:	PUNCT
iajs-515	1	5	a@âig@ú‹	a@âig@ú‹	PROPN
iajs-515	1	6	©	©	PROPN
iajs-515	1	7	@ü‹26@@öü»€a@i1@‚b«@h2013	@ü‹26@@öü»€a@i1@‚b«@h2013	PROPN
iajs-515	1	8	ibn	ibn	PROPN
iajs-515	1	9	al	al	PROPN
iajs-515	1	10	-	-	PUNCT
iajs-515	1	11	haitham	haitham	PROPN
iajs-515	1	12	jour	jour	X
iajs-515	1	13	.	.	PROPN
iajs-515	1	14	for	for	ADP
iajs-515	1	15	pure	pure	ADJ
iajs-515	1	16	&	&	CCONJ
iajs-515	1	17	appl	appl	PROPN
iajs-515	1	18	.	.	PUNCT
iajs-515	2	1	sci	sci	PROPN
iajs-515	2	2	.	.	PUNCT
iajs-515	2	3	vol	vol	NOUN
iajs-515	2	4	.	.	PROPN
iajs-515	3	1	26	26	NUM
iajs-515	3	2	(	(	PUNCT
iajs-515	3	3	1	1	NUM
iajs-515	3	4	)	)	PUNCT
iajs-515	3	5	2013	2013	NUM
iajs-515	3	6	comparison	comparison	NOUN
iajs-515	3	7	i	i	PROPN
iajs-515	3	8	-	-	PUNCT
iajs-515	3	9	v	v	PROPN
iajs-515	3	10	characteristics	characteristic	NOUN
iajs-515	3	11	of	of	ADP
iajs-515	3	12	sb	sb	PROPN
iajs-515	3	13	/	/	SYM
iajs-515	3	14	c	c	PROPN
iajs-515	3	15	-	-	PUNCT
iajs-515	3	16	si	si	PROPN
iajs-515	3	17	and	and	CCONJ
iajs-515	3	18	al	al	PROPN
iajs-515	3	19	/	/	SYM
iajs-515	3	20	c	c	PROPN
iajs-515	3	21	-	-	PUNCT
iajs-515	3	22	si	si	NOUN
iajs-515	3	23	junction	junction	NOUN
iajs-515	3	24	fatin	fatin	NOUN
iajs-515	3	25	g.	g.	PROPN
iajs-515	3	26	hachim	hachim	PROPN
iajs-515	3	27	department	department	PROPN
iajs-515	3	28	of	of	ADP
iajs-515	3	29	physics	physics	PROPN
iajs-515	3	30	/	/	SYM
iajs-515	3	31	college	college	PROPN
iajs-515	3	32	of	of	ADP
iajs-515	3	33	science	science	PROPN
iajs-515	3	34	/	/	SYM
iajs-515	3	35	university	university	PROPN
iajs-515	3	36	of	of	ADP
iajs-515	3	37	thi	thi	PROPN
iajs-515	3	38	-qar	-qar	PROPN
iajs-515	3	39	ramiz	ramiz	PROPN
iajs-515	3	40	a.	a.	PROPN
iajs-515	3	41	al	al	PROPN
iajs-515	3	42	-	-	PUNCT
iajs-515	3	43	ansari	ansari	PROPN
iajs-515	3	44	department	department	PROPN
iajs-515	3	45	of	of	ADP
iajs-515	3	46	physics	physics	PROPN
iajs-515	3	47	/	/	SYM
iajs-515	3	48	college	college	PROPN
iajs-515	3	49	of	of	ADP
iajs-515	3	50	science	science	NOUN
iajs-515	3	51	for	for	ADP
iajs-515	3	52	women	woman	NOUN
iajs-515	3	53	/	/	SYM
iajs-515	3	54	university	university	PROPN
iajs-515	3	55	of	of	ADP
iajs-515	3	56	baghdad	baghdad	PROPN
iajs-515	3	57	hussein	hussein	PROPN
iajs-515	3	58	kh	kh	PROPN
iajs-515	3	59	.	.	PUNCT
iajs-515	4	1	al	al	PROPN
iajs-515	4	2	-	-	PUNCT
iajs-515	4	3	lamy	lamy	PROPN
iajs-515	4	4	department	department	PROPN
iajs-515	4	5	of	of	ADP
iajs-515	4	6	physics	physics	PROPN
iajs-515	4	7	/	/	SYM
iajs-515	4	8	college	college	PROPN
iajs-515	4	9	of	of	ADP
iajs-515	4	10	science/	science/	NUM
iajs-515	4	11	university	university	PROPN
iajs-515	4	12	of	of	ADP
iajs-515	4	13	baghdad	baghdad	PROPN
iajs-515	4	14	received	receive	VERB
iajs-515	4	15	in	in	ADP
iajs-515	4	16	:	:	PUNCT
iajs-515	4	17	15march	15march	NUM
iajs-515	4	18	2012	2012	NUM
iajs-515	4	19	,	,	PUNCT
iajs-515	4	20	accepted	accept	VERB
iajs-515	4	21	in	in	ADP
iajs-515	4	22	:	:	PUNCT
iajs-515	4	23	21	21	NUM
iajs-515	4	24	may	may	PROPN
iajs-515	4	25	2012	2012	NUM
iajs-515	4	26	abstract	abstract	ADJ
iajs-515	4	27	hetero	hetero	NOUN
iajs-515	4	28	junctions	junction	NOUN
iajs-515	4	29	are	be	AUX
iajs-515	4	30	fabricated	fabricate	VERB
iajs-515	4	31	by	by	ADP
iajs-515	4	32	depositing	deposit	VERB
iajs-515	4	33	antimony	antimony	NOUN
iajs-515	4	34	(	(	PUNCT
iajs-515	4	35	sb	sb	NOUN
iajs-515	4	36	)	)	PUNCT
iajs-515	4	37	and	and	CCONJ
iajs-515	4	38	al	al	PROPN
iajs-515	4	39	films	film	NOUN
iajs-515	4	40	on	on	ADP
iajs-515	4	41	n	n	CCONJ
iajs-515	4	42	-	-	PUNCT
iajs-515	4	43	type	type	NOUN
iajs-515	4	44	single	single	ADJ
iajs-515	4	45	crystal(c	crystal(c	PROPN
iajs-515	4	46	-	-	PUNCT
iajs-515	4	47	si	si	NOUN
iajs-515	4	48	)	)	PUNCT
iajs-515	4	49	wafers	wafer	NOUN
iajs-515	4	50	by	by	ADP
iajs-515	4	51	the	the	DET
iajs-515	4	52	method	method	NOUN
iajs-515	4	53	of	of	ADP
iajs-515	4	54	vacuum	vacuum	ADJ
iajs-515	4	55	evaporation	evaporation	NOUN
iajs-515	4	56	with	with	ADP
iajs-515	4	57	thickness	thickness	NOUN
iajs-515	4	58	(	(	PUNCT
iajs-515	4	59	0.25	0.25	NUM
iajs-515	4	60	µm	µm	NOUN
iajs-515	4	61	)	)	PUNCT
iajs-515	4	62	,	,	PUNCT
iajs-515	4	63	with	with	SCONJ
iajs-515	4	64	rate	rate	NOUN
iajs-515	4	65	of	of	ADP
iajs-515	4	66	deposition	deposition	NOUN
iajs-515	4	67	equals	equal	VERB
iajs-515	4	68	to	to	ADP
iajs-515	4	69	2.77	2.77	NUM
iajs-515	4	70	å	å	PROPN
iajs-515	4	71	/	/	SYM
iajs-515	4	72	sec	sec	PROPN
iajs-515	4	73	,	,	PUNCT
iajs-515	4	74	all	all	DET
iajs-515	4	75	samples	sample	NOUN
iajs-515	4	76	are	be	AUX
iajs-515	4	77	annealed	anneal	VERB
iajs-515	4	78	in	in	ADP
iajs-515	4	79	a	a	DET
iajs-515	4	80	vacuum	vacuum	NOUN
iajs-515	4	81	for	for	ADP
iajs-515	4	82	one	one	NUM
iajs-515	4	83	hour	hour	NOUN
iajs-515	4	84	at	at	ADP
iajs-515	4	85	473k	473k	PROPN
iajs-515	4	86	.	.	PUNCT
iajs-515	5	1	the	the	DET
iajs-515	5	2	tests	test	NOUN
iajs-515	5	3	have	have	AUX
iajs-515	5	4	shown	show	VERB
iajs-515	5	5	that	that	SCONJ
iajs-515	5	6	all	all	DET
iajs-515	5	7	the	the	DET
iajs-515	5	8	films	film	NOUN
iajs-515	5	9	have	have	VERB
iajs-515	5	10	polycrystalline	polycrystalline	ADJ
iajs-515	5	11	structure	structure	NOUN
iajs-515	5	12	for	for	ADP
iajs-515	5	13	all	all	DET
iajs-515	5	14	sb	sb	PROPN
iajs-515	5	15	films	film	NOUN
iajs-515	5	16	.	.	PUNCT
iajs-515	6	1	the	the	DET
iajs-515	6	2	barrier	barrier	NOUN
iajs-515	6	3	heights	height	VERB
iajs-515	6	4	in	in	ADP
iajs-515	6	5	(	(	PUNCT
iajs-515	6	6	sb	sb	NOUN
iajs-515	6	7	/	/	SYM
iajs-515	6	8	c	c	PROPN
iajs-515	6	9	-	-	PUNCT
iajs-515	6	10	si	si	NOUN
iajs-515	6	11	)	)	PUNCT
iajs-515	6	12	junction	junction	NOUN
iajs-515	6	13	was	be	AUX
iajs-515	6	14	found	find	VERB
iajs-515	6	15	to	to	PART
iajs-515	6	16	be	be	AUX
iajs-515	6	17	equal	equal	ADJ
iajs-515	6	18	0.825ev	0.825ev	NOUN
iajs-515	6	19	,	,	PUNCT
iajs-515	6	20	but(al	but(al	NOUN
iajs-515	6	21	/	/	SYM
iajs-515	6	22	c	c	NOUN
iajs-515	6	23	-	-	PUNCT
iajs-515	6	24	si	si	NOUN
iajs-515	6	25	)	)	PUNCT
iajs-515	6	26	junction	junction	NOUN
iajs-515	6	27	ohmic	ohmic	ADJ
iajs-515	6	28	contact	contact	NOUN
iajs-515	6	29	.	.	PUNCT
iajs-515	7	1	current	current	ADJ
iajs-515	7	2	-	-	PUNCT
iajs-515	7	3	voltage	voltage	NOUN
iajs-515	7	4	measurements	measurement	NOUN
iajs-515	7	5	confirm	confirm	VERB
iajs-515	7	6	this	this	DET
iajs-515	7	7	behaviour	behaviour	NOUN
iajs-515	7	8	.	.	PUNCT
iajs-515	8	1	keywords	keyword	NOUN
iajs-515	8	2	:	:	PUNCT
iajs-515	8	3	sb	sb	NOUN
iajs-515	8	4	/	/	SYM
iajs-515	8	5	si	si	PROPN
iajs-515	8	6	heterojunctions	heterojunction	NOUN
iajs-515	8	7	,	,	PUNCT
iajs-515	8	8	i	i	PROPN
iajs-515	8	9	-	-	PUNCT
iajs-515	8	10	v	v	PROPN
iajs-515	8	11	characteristics	characteristic	NOUN
iajs-515	8	12	of	of	ADP
iajs-515	8	13	sb	sb	PROPN
iajs-515	8	14	/	/	SYM
iajs-515	8	15	si	si	PROPN
iajs-515	8	16	,	,	PUNCT
iajs-515	8	17	structure	structure	NOUN
iajs-515	8	18	properties	property	NOUN
iajs-515	8	19	of	of	ADP
iajs-515	8	20	sb	sb	PROPN
iajs-515	8	21	.	.	PROPN
iajs-515	8	22	153	153	NUM
iajs-515	8	23	|	|	NOUN
iajs-515	8	24	physics	physics	PROPN
iajs-515	8	25	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	PROPN
iajs-515	8	26	�	�	PROPN
iajs-515	8	27	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	NUM
iajs-515	8	28	:	:	PUNCT
iajs-515	8	29	a@âig@ú‹	a@âig@ú‹	PROPN
iajs-515	8	30	©	©	PROPN
iajs-515	8	31	@ü‹26@@öü»€a@i1@‚b«@h2013	@ü‹26@@öü»€a@i1@‚b«@h2013	PROPN
iajs-515	8	32	ibn	ibn	PROPN
iajs-515	8	33	al	al	PROPN
iajs-515	8	34	-	-	PUNCT
iajs-515	8	35	haitham	haitham	PROPN
iajs-515	8	36	jour	jour	X
iajs-515	8	37	.	.	PROPN
iajs-515	9	1	for	for	ADP
iajs-515	9	2	pure	pure	ADJ
iajs-515	9	3	&	&	CCONJ
iajs-515	9	4	appl	appl	PROPN
iajs-515	9	5	.	.	PUNCT
iajs-515	10	1	sci	sci	PROPN
iajs-515	10	2	.	.	PUNCT
iajs-515	10	3	vol	vol	NOUN
iajs-515	10	4	.	.	PROPN
iajs-515	11	1	26	26	NUM
iajs-515	11	2	(	(	PUNCT
iajs-515	11	3	1	1	NUM
iajs-515	11	4	)	)	PUNCT
iajs-515	11	5	2013	2013	NUM
iajs-515	11	6	introduction	introduction	NOUN
iajs-515	11	7	sb	sb	NOUN
iajs-515	11	8	/	/	SYM
iajs-515	11	9	si	si	PROPN
iajs-515	11	10	junctions	junction	NOUN
iajs-515	11	11	have	have	AUX
iajs-515	11	12	attracted	attract	VERB
iajs-515	11	13	many	many	ADJ
iajs-515	11	14	attentions	attention	NOUN
iajs-515	11	15	because	because	SCONJ
iajs-515	11	16	their	their	PRON
iajs-515	11	17	importance	importance	NOUN
iajs-515	11	18	properties	property	NOUN
iajs-515	11	19	for	for	ADP
iajs-515	11	20	this	this	DET
iajs-515	11	21	junction	junction	NOUN
iajs-515	11	22	.	.	PUNCT
iajs-515	12	1	it	it	PRON
iajs-515	12	2	can	can	AUX
iajs-515	12	3	be	be	AUX
iajs-515	12	4	used	use	VERB
iajs-515	12	5	as	as	ADP
iajs-515	12	6	rectifying	rectifying	NOUN
iajs-515	12	7	devices	device	NOUN
iajs-515	12	8	in	in	ADP
iajs-515	12	9	electronic	electronic	ADJ
iajs-515	12	10	applications	application	NOUN
iajs-515	12	11	[	[	X
iajs-515	12	12	1,2	1,2	NUM
iajs-515	12	13	]	]	PUNCT
iajs-515	12	14	.	.	PUNCT
iajs-515	13	1	this	this	DET
iajs-515	13	2	junction	junction	NOUN
iajs-515	13	3	is	be	AUX
iajs-515	13	4	unipolar	unipolar	ADJ
iajs-515	13	5	charge	charge	NOUN
iajs-515	13	6	of	of	ADP
iajs-515	13	7	minority	minority	NOUN
iajs-515	13	8	carrier	carrier	NOUN
iajs-515	13	9	that	that	PRON
iajs-515	13	10	’s	’	VERB
iajs-515	13	11	dominat	dominat	PROPN
iajs-515	13	12	on	on	ADP
iajs-515	13	13	contact	contact	NOUN
iajs-515	13	14	operation	operation	NOUN
iajs-515	13	15	which	which	PRON
iajs-515	13	16	has	have	VERB
iajs-515	13	17	only	only	ADV
iajs-515	13	18	one	one	NUM
iajs-515	13	19	kind	kind	NOUN
iajs-515	13	20	of	of	ADP
iajs-515	13	21	charges	charge	NOUN
iajs-515	13	22	,	,	PUNCT
iajs-515	13	23	by	by	ADP
iajs-515	13	24	it	it	PRON
iajs-515	13	25	we	we	PRON
iajs-515	13	26	could	could	AUX
iajs-515	13	27	get	get	VERB
iajs-515	13	28	the	the	DET
iajs-515	13	29	rectifier	rectifier	NOUN
iajs-515	13	30	character	character	NOUN
iajs-515	13	31	as	as	ADP
iajs-515	13	32	a	a	DET
iajs-515	13	33	result	result	NOUN
iajs-515	13	34	of	of	ADP
iajs-515	13	35	potential	potential	ADJ
iajs-515	13	36	barrier	barrier	NOUN
iajs-515	13	37	that	that	PRON
iajs-515	13	38	creates	create	VERB
iajs-515	13	39	by	by	ADP
iajs-515	13	40	finding	find	VERB
iajs-515	13	41	stable	stable	ADJ
iajs-515	13	42	space	space	NOUN
iajs-515	13	43	charges	charge	NOUN
iajs-515	13	44	in	in	ADP
iajs-515	13	45	semiconductor[3	semiconductor[3	NOUN
iajs-515	13	46	]	]	PUNCT
iajs-515	13	47	.	.	PUNCT
iajs-515	14	1	antimony	antimony	NOUN
iajs-515	14	2	can	can	AUX
iajs-515	14	3	be	be	AUX
iajs-515	14	4	creates	create	VERB
iajs-515	14	5	potential	potential	ADJ
iajs-515	14	6	barrier	barrier	NOUN
iajs-515	14	7	with	with	ADP
iajs-515	14	8	si	si	PROPN
iajs-515	14	9	because	because	SCONJ
iajs-515	14	10	resistivity	resistivity	NOUN
iajs-515	14	11	and	and	CCONJ
iajs-515	14	12	work	work	NOUN
iajs-515	14	13	function	function	NOUN
iajs-515	14	14	,	,	PUNCT
iajs-515	14	15	but	but	CCONJ
iajs-515	14	16	al	al	PROPN
iajs-515	14	17	metal	metal	PROPN
iajs-515	14	18	resistivity	resistivity	NOUN
iajs-515	14	19	is	be	AUX
iajs-515	14	20	low	low	ADJ
iajs-515	14	21	due	due	ADJ
iajs-515	14	22	to	to	ADP
iajs-515	14	23	conduction	conduction	NOUN
iajs-515	14	24	in	in	ADP
iajs-515	14	25	the	the	DET
iajs-515	14	26	metal	metal	NOUN
iajs-515	14	27	.	.	PUNCT
iajs-515	15	1	the	the	DET
iajs-515	15	2	al	al	PROPN
iajs-515	15	3	metal	metal	NOUN
iajs-515	15	4	was	be	AUX
iajs-515	15	5	chosen	choose	VERB
iajs-515	15	6	as	as	ADP
iajs-515	15	7	an	an	DET
iajs-515	15	8	ohmic	ohmic	ADJ
iajs-515	15	9	contact	contact	NOUN
iajs-515	15	10	with	with	ADP
iajs-515	15	11	the	the	DET
iajs-515	15	12	c	c	PROPN
iajs-515	15	13	-	-	PUNCT
iajs-515	15	14	si	si	NOUN
iajs-515	15	15	layer	layer	NOUN
iajs-515	16	1	[	[	X
iajs-515	16	2	1	1	NUM
iajs-515	16	3	]	]	PUNCT
iajs-515	16	4	.	.	PUNCT
iajs-515	17	1	the	the	DET
iajs-515	17	2	aim	aim	NOUN
iajs-515	17	3	of	of	ADP
iajs-515	17	4	this	this	DET
iajs-515	17	5	study	study	NOUN
iajs-515	17	6	is	be	AUX
iajs-515	17	7	prepared	prepared	ADJ
iajs-515	17	8	sb	sb	X
iajs-515	17	9	/	/	SYM
iajs-515	17	10	c	c	PROPN
iajs-515	17	11	-	-	PUNCT
iajs-515	17	12	si	si	PROPN
iajs-515	17	13	and	and	CCONJ
iajs-515	17	14	al	al	PROPN
iajs-515	17	15	/	/	SYM
iajs-515	17	16	c	c	PROPN
iajs-515	17	17	-	-	PUNCT
iajs-515	17	18	si	si	NOUN
iajs-515	17	19	junction	junction	NOUN
iajs-515	17	20	in	in	SCONJ
iajs-515	17	21	order	order	NOUN
iajs-515	17	22	to	to	PART
iajs-515	17	23	study	study	VERB
iajs-515	17	24	the	the	DET
iajs-515	17	25	φb	φb	NOUN
iajs-515	17	26	,	,	PUNCT
iajs-515	17	27	is	be	AUX
iajs-515	17	28	and	and	CCONJ
iajs-515	17	29	β	β	X
iajs-515	17	30	as	as	ADP
iajs-515	17	31	a	a	DET
iajs-515	17	32	function	function	NOUN
iajs-515	17	33	to	to	ADP
iajs-515	17	34	annealing	annealing	NOUN
iajs-515	17	35	and	and	CCONJ
iajs-515	17	36	thickness	thickness	NOUN
iajs-515	17	37	.	.	PUNCT
iajs-515	18	1	experimental	experimental	ADJ
iajs-515	18	2	part	part	PROPN
iajs-515	18	3	sb	sb	PROPN
iajs-515	18	4	and	and	CCONJ
iajs-515	18	5	al	al	PROPN
iajs-515	18	6	films	film	NOUN
iajs-515	18	7	were	be	AUX
iajs-515	18	8	deposited	deposit	VERB
iajs-515	18	9	on	on	ADP
iajs-515	18	10	the	the	DET
iajs-515	18	11	silicon	silicon	NOUN
iajs-515	18	12	substrates	substrate	NOUN
iajs-515	18	13	by	by	ADP
iajs-515	18	14	the	the	DET
iajs-515	18	15	method	method	NOUN
iajs-515	18	16	of	of	ADP
iajs-515	18	17	vacuum	vacuum	NOUN
iajs-515	18	18	evaporation	evaporation	NOUN
iajs-515	18	19	(	(	PUNCT
iajs-515	18	20	type	type	NOUN
iajs-515	18	21	edward	edward	NOUN
iajs-515	18	22	coating	coating	NOUN
iajs-515	18	23	system	system	NOUN
iajs-515	18	24	)	)	PUNCT
iajs-515	18	25	with	with	ADP
iajs-515	18	26	pressur	pressur	NOUN
iajs-515	18	27	10	10	NUM
iajs-515	18	28	-	-	SYM
iajs-515	18	29	5	5	NUM
iajs-515	18	30	mbar	mbar	NOUN
iajs-515	18	31	.	.	PUNCT
iajs-515	19	1	the	the	DET
iajs-515	19	2	thickness	thickness	NOUN
iajs-515	19	3	of	of	ADP
iajs-515	19	4	each	each	DET
iajs-515	19	5	deposited	deposit	VERB
iajs-515	19	6	thin	thin	ADJ
iajs-515	19	7	film	film	NOUN
iajs-515	19	8	is	be	AUX
iajs-515	19	9	(	(	PUNCT
iajs-515	19	10	0.25	0.25	NUM
iajs-515	19	11	µm	µm	NOUN
iajs-515	19	12	)	)	PUNCT
iajs-515	19	13	,	,	PUNCT
iajs-515	19	14	the	the	DET
iajs-515	19	15	junctions	junction	NOUN
iajs-515	19	16	are	be	AUX
iajs-515	19	17	annealed	anneal	VERB
iajs-515	19	18	in	in	ADP
iajs-515	19	19	a	a	DET
iajs-515	19	20	vacuum	vacuum	NOUN
iajs-515	19	21	at	at	ADP
iajs-515	19	22	a	a	DET
iajs-515	19	23	temperature	temperature	NOUN
iajs-515	19	24	of	of	ADP
iajs-515	19	25	437k	437k	NOUN
iajs-515	19	26	for	for	ADP
iajs-515	19	27	one	one	NUM
iajs-515	19	28	hour	hour	NOUN
iajs-515	19	29	.	.	PUNCT
iajs-515	20	1	sb	sb	PROPN
iajs-515	20	2	structure	structure	PROPN
iajs-515	20	3	was	be	AUX
iajs-515	20	4	studied	study	VERB
iajs-515	20	5	by	by	ADP
iajs-515	20	6	x	x	ADJ
iajs-515	20	7	-	-	NOUN
iajs-515	20	8	ray	ray	NOUN
iajs-515	20	9	diffraction	diffraction	NOUN
iajs-515	20	10	fig	fig	NOUN
iajs-515	20	11	(	(	PUNCT
iajs-515	20	12	1	1	NUM
iajs-515	20	13	)	)	PUNCT
iajs-515	20	14	comparative	comparative	NOUN
iajs-515	20	15	with	with	ADP
iajs-515	20	16	standard	standard	ADJ
iajs-515	20	17	value	value	NOUN
iajs-515	20	18	in	in	ADP
iajs-515	20	19	astm	astm	PROPN
iajs-515	20	20	,	,	PUNCT
iajs-515	20	21	used	use	VERB
iajs-515	20	22	a	a	DET
iajs-515	20	23	philips	philips	PROPN
iajs-515	20	24	x	x	NOUN
iajs-515	20	25	-	-	NOUN
iajs-515	20	26	ray	ray	NOUN
iajs-515	20	27	diffractometer	diffractometer	NOUN
iajs-515	20	28	system	system	NOUN
iajs-515	20	29	which	which	PRON
iajs-515	20	30	records	record	VERB
iajs-515	20	31	the	the	DET
iajs-515	20	32	intensity	intensity	NOUN
iajs-515	20	33	as	as	ADP
iajs-515	20	34	a	a	DET
iajs-515	20	35	function	function	NOUN
iajs-515	20	36	of	of	ADP
iajs-515	20	37	bragg	bragg	PROPN
iajs-515	20	38	's	's	PART
iajs-515	20	39	angle	angle	NOUN
iajs-515	20	40	.	.	PUNCT
iajs-515	21	1	the	the	DET
iajs-515	21	2	source	source	NOUN
iajs-515	21	3	of	of	ADP
iajs-515	21	4	radiation	radiation	NOUN
iajs-515	21	5	was	be	AUX
iajs-515	21	6	cu(kα	cu(kα	PROPN
iajs-515	21	7	)	)	PUNCT
iajs-515	21	8	with	with	ADP
iajs-515	21	9	wavelength	wavelength	NOUN
iajs-515	21	10	λ=1.5406a	λ=1.5406a	PROPN
iajs-515	21	11	°	°	PROPN
iajs-515	21	12	,	,	PUNCT
iajs-515	21	13	the	the	DET
iajs-515	21	14	current	current	NOUN
iajs-515	21	15	was	be	AUX
iajs-515	21	16	30ma	30ma	ADJ
iajs-515	21	17	and	and	CCONJ
iajs-515	21	18	the	the	DET
iajs-515	21	19	voltage	voltage	NOUN
iajs-515	21	20	was	be	AUX
iajs-515	21	21	40	40	NUM
iajs-515	21	22	kv	kv	PROPN
iajs-515	21	23	,	,	PUNCT
iajs-515	21	24	the	the	DET
iajs-515	21	25	current	current	ADJ
iajs-515	21	26	-	-	PUNCT
iajs-515	21	27	voltage	voltage	NOUN
iajs-515	21	28	measurements	measurement	NOUN
iajs-515	21	29	in	in	ADP
iajs-515	21	30	the	the	DET
iajs-515	21	31	dark	dark	NOUN
iajs-515	21	32	were	be	AUX
iajs-515	21	33	done	do	VERB
iajs-515	21	34	for	for	ADP
iajs-515	21	35	the	the	DET
iajs-515	21	36	sb	sb	PROPN
iajs-515	21	37	/	/	SYM
iajs-515	21	38	si	si	PROPN
iajs-515	21	39	heterojuntion	heterojuntion	NOUN
iajs-515	21	40	by	by	ADP
iajs-515	21	41	using	use	VERB
iajs-515	21	42	keithley	keithley	PROPN
iajs-515	21	43	digital	digital	ADJ
iajs-515	21	44	electrometer	electrometer	NOUN
iajs-515	21	45	616	616	NUM
iajs-515	21	46	and	and	CCONJ
iajs-515	21	47	d.c	d.c	PROPN
iajs-515	21	48	.	.	PUNCT
iajs-515	21	49	power	power	NOUN
iajs-515	21	50	supply	supply	NOUN
iajs-515	21	51	.	.	PUNCT
iajs-515	22	1	the	the	DET
iajs-515	22	2	bias	bias	NOUN
iajs-515	22	3	voltage	voltage	NOUN
iajs-515	22	4	was	be	AUX
iajs-515	22	5	varied	varied	ADJ
iajs-515	22	6	in	in	ADP
iajs-515	22	7	the	the	DET
iajs-515	22	8	range	range	NOUN
iajs-515	22	9	of	of	ADP
iajs-515	22	10	(	(	PUNCT
iajs-515	22	11	0	0	NUM
iajs-515	22	12	–	–	PUNCT
iajs-515	22	13	1.4	1.4	NUM
iajs-515	22	14	)	)	PUNCT
iajs-515	22	15	volt	volt	NOUN
iajs-515	22	16	in	in	ADP
iajs-515	22	17	the	the	DET
iajs-515	22	18	case	case	NOUN
iajs-515	22	19	of	of	ADP
iajs-515	22	20	forward	forward	ADV
iajs-515	22	21	and	and	CCONJ
iajs-515	22	22	reverse	reverse	ADJ
iajs-515	22	23	bias	bias	NOUN
iajs-515	22	24	.	.	PUNCT
iajs-515	23	1	from	from	ADP
iajs-515	23	2	plots	plot	NOUN
iajs-515	23	3	of	of	ADP
iajs-515	23	4	the	the	DET
iajs-515	23	5	relation	relation	NOUN
iajs-515	23	6	between	between	ADP
iajs-515	23	7	the	the	DET
iajs-515	23	8	forward	forward	ADV
iajs-515	23	9	current	current	ADJ
iajs-515	23	10	and	and	CCONJ
iajs-515	23	11	bias	bias	NOUN
iajs-515	23	12	voltage	voltage	NOUN
iajs-515	23	13	,	,	PUNCT
iajs-515	23	14	potential	potential	ADJ
iajs-515	23	15	barrier	barrier	NOUN
iajs-515	23	16	height	height	NOUN
iajs-515	23	17	(	(	PUNCT
iajs-515	23	18	φb	φb	NOUN
iajs-515	23	19	)	)	PUNCT
iajs-515	23	20	can	can	AUX
iajs-515	23	21	be	be	AUX
iajs-515	23	22	determined	determine	VERB
iajs-515	23	23	from	from	ADP
iajs-515	23	24	[	[	X
iajs-515	23	25	4	4	NUM
iajs-515	23	26	]	]	PUNCT
iajs-515	23	27	:	:	PUNCT
iajs-515	23	28	is	be	AUX
iajs-515	23	29	=	=	PUNCT
iajs-515	23	30	a	a	PROPN
iajs-515	23	31	*	*	PUNCT
iajs-515	23	32	t2	t2	PROPN
iajs-515	23	33	exp	exp	NOUN
iajs-515	23	34	(	(	PUNCT
iajs-515	23	35	-qφb	-qφb	X
iajs-515	23	36	/	/	SYM
iajs-515	23	37	kbt)	kbt)	NOUN
iajs-515	23	38	…	…	SYM
iajs-515	23	39	…	…	PUNCT
iajs-515	23	40	…	…	PUNCT
iajs-515	23	41	…	…	PUNCT
iajs-515	23	42	…	…	PUNCT
iajs-515	23	43	…	…	PUNCT
iajs-515	23	44	…	…	PUNCT
iajs-515	23	45	…	…	PUNCT
iajs-515	23	46	…	…	PUNCT
iajs-515	23	47	…	…	PUNCT
iajs-515	23	48	…	…	PUNCT
iajs-515	23	49	.(1	.(1	NUM
iajs-515	23	50	)	)	PUNCT
iajs-515	23	51	where	where	SCONJ
iajs-515	23	52	a	a	PRON
iajs-515	23	53	*	*	PUNCT
iajs-515	23	54	is	be	AUX
iajs-515	23	55	the	the	DET
iajs-515	23	56	effective	effective	ADJ
iajs-515	23	57	richardson	richardson	PROPN
iajs-515	23	58	constant	constant	PROPN
iajs-515	23	59	modified	modify	VERB
iajs-515	23	60	to	to	PART
iajs-515	23	61	take	take	VERB
iajs-515	23	62	account	account	NOUN
iajs-515	23	63	of	of	ADP
iajs-515	23	64	both	both	CCONJ
iajs-515	23	65	the	the	DET
iajs-515	23	66	effective	effective	ADJ
iajs-515	23	67	mass	mass	NOUN
iajs-515	23	68	of	of	ADP
iajs-515	23	69	the	the	DET
iajs-515	23	70	electrons	electron	NOUN
iajs-515	23	71	in	in	ADP
iajs-515	23	72	the	the	DET
iajs-515	23	73	semiconductor	semiconductor	NOUN
iajs-515	23	74	,	,	PUNCT
iajs-515	23	75	kb	kb	PROPN
iajs-515	23	76	is	be	AUX
iajs-515	23	77	the	the	DET
iajs-515	23	78	botzman	botzman	NOUN
iajs-515	23	79	's	's	PART
iajs-515	23	80	constant(1.3806×10	constant(1.3806×10	PROPN
iajs-515	23	81	-	-	PUNCT
iajs-515	23	82	23	23	NUM
iajs-515	23	83	j	j	PROPN
iajs-515	23	84	/	/	SYM
iajs-515	23	85	k	k	PROPN
iajs-515	23	86	)	)	PUNCT
iajs-515	23	87	,	,	PUNCT
iajs-515	23	88	q	q	PROPN
iajs-515	23	89	is	be	AUX
iajs-515	23	90	the	the	DET
iajs-515	23	91	electronic	electronic	ADJ
iajs-515	23	92	charge	charge	NOUN
iajs-515	23	93	,	,	PUNCT
iajs-515	23	94	t	t	PROPN
iajs-515	23	95	is	be	AUX
iajs-515	23	96	the	the	DET
iajs-515	23	97	absolute	absolute	ADJ
iajs-515	23	98	temperature	temperature	NOUN
iajs-515	23	99	,	,	PUNCT
iajs-515	23	100	the	the	DET
iajs-515	23	101	constant	constant	ADJ
iajs-515	23	102	is	be	AUX
iajs-515	23	103	is	be	AUX
iajs-515	23	104	the	the	DET
iajs-515	23	105	saturation	saturation	NOUN
iajs-515	23	106	current	current	ADJ
iajs-515	23	107	.	.	PUNCT
iajs-515	24	1	φb=	φb=	NOUN
iajs-515	24	2	𝐾𝐵𝑇	𝐾𝐵𝑇	PROPN
iajs-515	24	3	𝑞	𝑞	PART
iajs-515	24	4	𝐿𝑛	𝐿𝑛	PROPN
iajs-515	24	5	𝐴∗𝑇2	𝐴∗𝑇2	VERB
iajs-515	24	6	𝐼𝑠	𝐼𝑠	PROPN
iajs-515	24	7	…	…	PUNCT
iajs-515	24	8	…	…	PUNCT
iajs-515	24	9	…	…	PUNCT
iajs-515	24	10	…	…	PUNCT
iajs-515	24	11	…	…	PUNCT
iajs-515	24	12	…	…	PUNCT
iajs-515	24	13	…	…	PUNCT
iajs-515	24	14	…	…	PUNCT
iajs-515	24	15	…	…	PUNCT
iajs-515	24	16	…	…	PUNCT
iajs-515	24	17	…	…	PUNCT
iajs-515	24	18	…	…	PUNCT
iajs-515	24	19	…	…	PUNCT
iajs-515	24	20	…	…	PUNCT
iajs-515	24	21	…	…	PUNCT
iajs-515	24	22	…	…	PUNCT
iajs-515	24	23	.(2	.(2	NUM
iajs-515	24	24	)	)	PUNCT
iajs-515	25	1	the	the	DET
iajs-515	25	2	ideality	ideality	NOUN
iajs-515	25	3	factor	factor	NOUN
iajs-515	25	4	(	(	PUNCT
iajs-515	25	5	β	β	NOUN
iajs-515	25	6	)	)	PUNCT
iajs-515	25	7	can	can	AUX
iajs-515	25	8	be	be	AUX
iajs-515	25	9	determined	determine	VERB
iajs-515	25	10	by	by	ADP
iajs-515	25	11	the	the	DET
iajs-515	25	12	relation	relation	NOUN
iajs-515	25	13	:	:	PUNCT
iajs-515	25	14			NOUN
iajs-515	25	15			PUNCT
iajs-515	26	1			PROPN
iajs-515	26	2			NOUN
iajs-515	26	3			VERB
iajs-515	26	4	⋅=β	⋅=β	PUNCT
iajs-515	26	5	s	s	VERB
iajs-515	26	6	fb	fb	INTJ
iajs-515	27	1	i	i	PRON
iajs-515	27	2	iln	iln	PROPN
iajs-515	27	3	v	v	INTJ
iajs-515	27	4	tk	tk	PROPN
iajs-515	27	5	q	q	X
iajs-515	27	6	…	…	PUNCT
iajs-515	27	7	…	…	PUNCT
iajs-515	27	8	…	…	PUNCT
iajs-515	27	9	…	…	PUNCT
iajs-515	27	10	…	…	PUNCT
iajs-515	27	11	…	…	PUNCT
iajs-515	27	12	…	…	PUNCT
iajs-515	27	13	…	…	PUNCT
iajs-515	27	14	…	…	PUNCT
iajs-515	27	15	…	…	PUNCT
iajs-515	27	16	…	…	PUNCT
iajs-515	27	17	…	…	PUNCT
iajs-515	27	18	…	…	PUNCT
iajs-515	27	19	…	…	PUNCT
iajs-515	27	20	.(3	.(3	NOUN
iajs-515	27	21	)	)	PUNCT
iajs-515	27	22	where	where	SCONJ
iajs-515	27	23	if	if	SCONJ
iajs-515	27	24	is	be	AUX
iajs-515	27	25	the	the	DET
iajs-515	27	26	forward	forward	ADJ
iajs-515	27	27	bias	bias	NOUN
iajs-515	27	28	current	current	ADJ
iajs-515	27	29	,	,	PUNCT
iajs-515	27	30	the	the	DET
iajs-515	27	31	ideality	ideality	NOUN
iajs-515	27	32	factor	factor	NOUN
iajs-515	27	33	(	(	PUNCT
iajs-515	27	34	β	β	NOUN
iajs-515	27	35	)	)	PUNCT
iajs-515	27	36	is	be	AUX
iajs-515	27	37	related	relate	VERB
iajs-515	27	38	to	to	ADP
iajs-515	27	39	the	the	DET
iajs-515	27	40	various	various	ADJ
iajs-515	27	41	physical	physical	ADJ
iajs-515	27	42	properties	property	NOUN
iajs-515	27	43	of	of	ADP
iajs-515	27	44	the	the	PRON
iajs-515	27	45	of	of	ADP
iajs-515	27	46	heterojunction	heterojunction	NOUN
iajs-515	27	47	.	.	PUNCT
iajs-515	28	1	results	result	NOUN
iajs-515	28	2	and	and	CCONJ
iajs-515	28	3	discussion	discussion	NOUN
iajs-515	28	4	for	for	ADP
iajs-515	28	5	sb	sb	PROPN
iajs-515	28	6	films	film	NOUN
iajs-515	28	7	prepared	prepare	VERB
iajs-515	28	8	at	at	ADP
iajs-515	28	9	r.t	r.t	PROPN
iajs-515	28	10	and	and	CCONJ
iajs-515	28	11	ta=473k	ta=473k	VERB
iajs-515	28	12	with	with	ADP
iajs-515	28	13	(	(	PUNCT
iajs-515	28	14	0.25µm),from	0.25µm),from	NUM
iajs-515	28	15	fig	fig	NOUN
iajs-515	28	16	(	(	PUNCT
iajs-515	28	17	1	1	X
iajs-515	28	18	)	)	PUNCT
iajs-515	28	19	showed	show	VERB
iajs-515	28	20	sb	sb	PROPN
iajs-515	28	21	films	film	NOUN
iajs-515	28	22	as	as	ADP
iajs-515	28	23	a	a	DET
iajs-515	28	24	polycrystalline	polycrystalline	ADJ
iajs-515	28	25	structure	structure	NOUN
iajs-515	28	26	,	,	PUNCT
iajs-515	28	27	but	but	CCONJ
iajs-515	28	28	peaks	peak	NOUN
iajs-515	28	29	intensity	intensity	NOUN
iajs-515	28	30	in	in	ADP
iajs-515	28	31	fig(b1)increase	fig(b1)increase	NOUN
iajs-515	28	32	with	with	ADP
iajs-515	28	33	the	the	DET
iajs-515	28	34	increase	increase	NOUN
iajs-515	28	35	of	of	ADP
iajs-515	28	36	annealing	anneal	VERB
iajs-515	28	37	a	a	DET
iajs-515	28	38	temperature	temperature	NOUN
iajs-515	28	39	caused	cause	VERB
iajs-515	28	40	by	by	ADP
iajs-515	28	41	elimination	elimination	NOUN
iajs-515	28	42	of	of	ADP
iajs-515	28	43	voids	voids	NOUN
iajs-515	28	44	and	and	CCONJ
iajs-515	28	45	the	the	DET
iajs-515	28	46	reduction	reduction	NOUN
iajs-515	28	47	of	of	ADP
iajs-515	28	48	dangling	dangle	VERB
iajs-515	28	49	bond	bond	NOUN
iajs-515	28	50	concentration	concentration	NOUN
iajs-515	28	51	(	(	PUNCT
iajs-515	28	52	structural	structural	ADJ
iajs-515	28	53	defects	defect	NOUN
iajs-515	28	54	)	)	PUNCT
iajs-515	28	55	.	.	PUNCT
iajs-515	29	1	these	these	DET
iajs-515	29	2	results	result	NOUN
iajs-515	29	3	are	be	AUX
iajs-515	29	4	in	in	ADP
iajs-515	29	5	agreement	agreement	NOUN
iajs-515	29	6	with	with	ADP
iajs-515	29	7	[	[	X
iajs-515	29	8	5	5	NUM
iajs-515	29	9	]	]	PUNCT
iajs-515	29	10	.	.	PUNCT
iajs-515	30	1	these	these	DET
iajs-515	30	2	xrd	xrd	NOUN
iajs-515	30	3	peaks	peak	NOUN
iajs-515	30	4	were	be	AUX
iajs-515	30	5	shown	show	VERB
iajs-515	30	6	to	to	PART
iajs-515	30	7	be	be	AUX
iajs-515	30	8	the	the	DET
iajs-515	30	9	(	(	PUNCT
iajs-515	30	10	003	003	NUM
iajs-515	30	11	)	)	PUNCT
iajs-515	30	12	,	,	PUNCT
iajs-515	30	13	(	(	PUNCT
iajs-515	30	14	110	110	NUM
iajs-515	30	15	)	)	PUNCT
iajs-515	30	16	and	and	CCONJ
iajs-515	30	17	(	(	PUNCT
iajs-515	30	18	006	006	NUM
iajs-515	30	19	)	)	PUNCT
iajs-515	30	20	are	be	AUX
iajs-515	30	21	listed	list	VERB
iajs-515	30	22	in	in	ADP
iajs-515	30	23	table(1	table(1	PROPN
iajs-515	30	24	)	)	PUNCT
iajs-515	30	25	according	accord	VERB
iajs-515	30	26	to	to	ADP
iajs-515	30	27	astm	astm	PROPN
iajs-515	30	28	system	system	NOUN
iajs-515	30	29	.	.	PUNCT
iajs-515	31	1	the	the	DET
iajs-515	31	2	current	current	ADJ
iajs-515	31	3	voltage	voltage	NOUN
iajs-515	31	4	(	(	PUNCT
iajs-515	31	5	i	i	NOUN
iajs-515	31	6	-	-	PUNCT
iajs-515	31	7	v	v	NOUN
iajs-515	31	8	)	)	PUNCT
iajs-515	31	9	characteristics	characteristic	NOUN
iajs-515	31	10	of	of	ADP
iajs-515	31	11	al	al	PROPN
iajs-515	31	12	/	/	SYM
iajs-515	31	13	si	si	PROPN
iajs-515	31	14	all	all	DET
iajs-515	31	15	fabricated	fabricate	VERB
iajs-515	31	16	junctions	junction	NOUN
iajs-515	31	17	of	of	ADP
iajs-515	31	18	the	the	DET
iajs-515	31	19	forward	forward	NOUN
iajs-515	31	20	and	and	CCONJ
iajs-515	31	21	reverse	reverse	ADJ
iajs-515	31	22	biased	bias	VERB
iajs-515	31	23	are	be	AUX
iajs-515	31	24	shown	show	VERB
iajs-515	31	25	in	in	ADP
iajs-515	31	26	figure	figure	NOUN
iajs-515	31	27	(	(	PUNCT
iajs-515	31	28	2).it	2).it	PRON
iajs-515	31	29	can	can	AUX
iajs-515	31	30	be	be	AUX
iajs-515	31	31	seen	see	VERB
iajs-515	31	32	from	from	ADP
iajs-515	31	33	this	this	DET
iajs-515	31	34	curve	curve	NOUN
iajs-515	31	35	that	that	SCONJ
iajs-515	31	36	the	the	DET
iajs-515	31	37	linear	linear	ADJ
iajs-515	31	38	154	154	NUM
iajs-515	31	39	|	|	NOUN
iajs-515	31	40	physics	physics	PROPN
iajs-515	31	41	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	PROPN
iajs-515	31	42	�	�	PROPN
iajs-515	31	43	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	NUM
iajs-515	31	44	:	:	PUNCT
iajs-515	31	45	a@âig@ú‹	a@âig@ú‹	PROPN
iajs-515	31	46	©	©	PROPN
iajs-515	31	47	@ü‹26@@öü»€a@i1@‚b«@h2013	@ü‹26@@öü»€a@i1@‚b«@h2013	PROPN
iajs-515	31	48	ibn	ibn	PROPN
iajs-515	31	49	al	al	PROPN
iajs-515	31	50	-	-	PUNCT
iajs-515	31	51	haitham	haitham	PROPN
iajs-515	31	52	jour	jour	X
iajs-515	31	53	.	.	PROPN
iajs-515	31	54	for	for	ADP
iajs-515	31	55	pure	pure	ADJ
iajs-515	31	56	&	&	CCONJ
iajs-515	31	57	appl	appl	PROPN
iajs-515	31	58	.	.	PUNCT
iajs-515	32	1	sci	sci	PROPN
iajs-515	32	2	.	.	PUNCT
iajs-515	32	3	vol	vol	NOUN
iajs-515	32	4	.	.	PROPN
iajs-515	33	1	26	26	NUM
iajs-515	33	2	(	(	PUNCT
iajs-515	33	3	1	1	NUM
iajs-515	33	4	)	)	PUNCT
iajs-515	33	5	2013	2013	NUM
iajs-515	33	6	relation	relation	NOUN
iajs-515	33	7	shape	shape	NOUN
iajs-515	33	8	behavior	behavior	NOUN
iajs-515	33	9	between	between	ADP
iajs-515	33	10	current	current	ADJ
iajs-515	33	11	and	and	CCONJ
iajs-515	33	12	voltage	voltage	NOUN
iajs-515	33	13	for	for	ADP
iajs-515	33	14	all	all	DET
iajs-515	33	15	samples	sample	NOUN
iajs-515	33	16	prepared	prepare	VERB
iajs-515	33	17	with	with	ADP
iajs-515	33	18	thickness	thickness	NOUN
iajs-515	33	19	(	(	PUNCT
iajs-515	33	20	0.25	0.25	NUM
iajs-515	33	21	µm	µm	NOUN
iajs-515	33	22	)	)	PUNCT
iajs-515	33	23	and	and	CCONJ
iajs-515	33	24	annealed	anneal	VERB
iajs-515	33	25	temperature	temperature	NOUN
iajs-515	33	26	of	of	ADP
iajs-515	33	27	473k	473k	PROPN
iajs-515	33	28	.	.	PUNCT
iajs-515	34	1	this	this	DET
iajs-515	34	2	behavior	behavior	NOUN
iajs-515	34	3	may	may	AUX
iajs-515	34	4	be	be	AUX
iajs-515	34	5	interpreted	interpret	VERB
iajs-515	34	6	by	by	ADP
iajs-515	34	7	the	the	DET
iajs-515	34	8	work	work	NOUN
iajs-515	34	9	function	function	NOUN
iajs-515	34	10	of	of	ADP
iajs-515	34	11	al	al	PROPN
iajs-515	34	12	and	and	CCONJ
iajs-515	34	13	c	c	PROPN
iajs-515	34	14	-	-	PUNCT
iajs-515	34	15	si	si	X
iajs-515	34	16	are	be	AUX
iajs-515	34	17	nearly	nearly	ADV
iajs-515	34	18	similar	similar	ADJ
iajs-515	34	19	(	(	PUNCT
iajs-515	34	20	that	that	PRON
iajs-515	34	21	’s	’s	ADV
iajs-515	34	22	mean	mean	VERB
iajs-515	34	23	the	the	DET
iajs-515	34	24	junctions	junction	NOUN
iajs-515	34	25	do	do	AUX
iajs-515	34	26	not	not	PART
iajs-515	34	27	creat	creat	VERB
iajs-515	34	28	the	the	DET
iajs-515	34	29	depletion	depletion	NOUN
iajs-515	34	30	layer	layer	NOUN
iajs-515	34	31	)	)	PUNCT
iajs-515	34	32	,	,	PUNCT
iajs-515	34	33	(	(	PUNCT
iajs-515	34	34	φb	φb	NOUN
iajs-515	34	35	)	)	PUNCT
iajs-515	34	36	is	be	AUX
iajs-515	34	37	zero	zero	NUM
iajs-515	34	38	or	or	CCONJ
iajs-515	34	39	negative	negative	ADJ
iajs-515	34	40	and	and	CCONJ
iajs-515	34	41	electron	electron	NOUN
iajs-515	35	1	can	can	AUX
iajs-515	35	2	flow	flow	VERB
iajs-515	35	3	freely	freely	ADV
iajs-515	35	4	in	in	ADP
iajs-515	35	5	the	the	DET
iajs-515	35	6	two	two	NUM
iajs-515	35	7	directions	direction	NOUN
iajs-515	35	8	.in	.in	PUNCT
iajs-515	35	9	ohmic	ohmic	ADJ
iajs-515	35	10	contact	contact	NOUN
iajs-515	35	11	no	no	DET
iajs-515	35	12	potential	potential	ADJ
iajs-515	35	13	barrier	barrier	NOUN
iajs-515	35	14	will	will	AUX
iajs-515	35	15	be	be	AUX
iajs-515	35	16	formed	form	VERB
iajs-515	35	17	between	between	ADP
iajs-515	35	18	al	al	PROPN
iajs-515	35	19	electrode	electrode	PROPN
iajs-515	35	20	and	and	CCONJ
iajs-515	35	21	c	c	NOUN
iajs-515	35	22	-	-	PUNCT
iajs-515	35	23	si	si	NOUN
iajs-515	35	24	layer	layer	NOUN
iajs-515	35	25	.	.	PUNCT
iajs-515	36	1	these	these	DET
iajs-515	36	2	results	result	NOUN
iajs-515	36	3	are	be	AUX
iajs-515	36	4	in	in	ADP
iajs-515	36	5	agreement	agreement	NOUN
iajs-515	36	6	with	with	ADP
iajs-515	36	7	[	[	X
iajs-515	36	8	6	6	NUM
iajs-515	36	9	]	]	PUNCT
iajs-515	36	10	.	.	PUNCT
iajs-515	37	1	but(i	but(i	NOUN
iajs-515	37	2	-	-	PUNCT
iajs-515	37	3	v	v	NOUN
iajs-515	37	4	)	)	PUNCT
iajs-515	37	5	characteristics	characteristic	NOUN
iajs-515	37	6	of	of	ADP
iajs-515	37	7	sb	sb	PROPN
iajs-515	37	8	/	/	SYM
iajs-515	37	9	si	si	X
iajs-515	38	1	in	in	ADP
iajs-515	38	2	figure	figure	NOUN
iajs-515	38	3	(	(	PUNCT
iajs-515	38	4	3	3	NUM
iajs-515	38	5	)	)	PUNCT
iajs-515	38	6	show	show	VERB
iajs-515	38	7	this	this	DET
iajs-515	38	8	curve	curve	NOUN
iajs-515	38	9	the	the	DET
iajs-515	38	10	forward	forward	ADJ
iajs-515	38	11	characteristics	characteristic	NOUN
iajs-515	38	12	shows	show	VERB
iajs-515	38	13	exponential	exponential	ADJ
iajs-515	38	14	behaviour	behaviour	NOUN
iajs-515	38	15	,	,	PUNCT
iajs-515	38	16	the	the	DET
iajs-515	38	17	current	current	NOUN
iajs-515	38	18	increasing	increase	VERB
iajs-515	38	19	rapidly	rapidly	ADV
iajs-515	38	20	with	with	ADP
iajs-515	38	21	voltage	voltage	NOUN
iajs-515	38	22	according	accord	VERB
iajs-515	38	23	to	to	ADP
iajs-515	38	24	equation	equation	NOUN
iajs-515	38	25	(	(	PUNCT
iajs-515	38	26	1	1	NUM
iajs-515	38	27	)	)	PUNCT
iajs-515	38	28	,	,	PUNCT
iajs-515	38	29	for	for	ADP
iajs-515	38	30	all	all	DET
iajs-515	38	31	samples	sample	NOUN
iajs-515	38	32	prepared	prepare	VERB
iajs-515	38	33	with	with	ADP
iajs-515	38	34	thickness	thickness	NOUN
iajs-515	38	35	(	(	PUNCT
iajs-515	38	36	0.25	0.25	NUM
iajs-515	38	37	µm	µm	NOUN
iajs-515	38	38	)	)	PUNCT
iajs-515	38	39	and	and	CCONJ
iajs-515	38	40	annealed	anneal	VERB
iajs-515	38	41	temperature	temperature	NOUN
iajs-515	38	42	of	of	ADP
iajs-515	38	43	473k	473k	NOUN
iajs-515	38	44	,	,	PUNCT
iajs-515	38	45	that	that	PRON
iajs-515	38	46	’s	’s	ADV
iajs-515	38	47	mean	mean	VERB
iajs-515	38	48	the	the	DET
iajs-515	38	49	junctions	junction	NOUN
iajs-515	38	50	creat	creat	VERB
iajs-515	38	51	the	the	DET
iajs-515	38	52	depletion	depletion	NOUN
iajs-515	38	53	layer(w	layer(w	NOUN
iajs-515	38	54	)	)	PUNCT
iajs-515	38	55	and	and	CCONJ
iajs-515	38	56	barrier	barrier	NOUN
iajs-515	38	57	height(φb	height(φb	PROPN
iajs-515	38	58	)	)	PUNCT
iajs-515	38	59	.	.	PUNCT
iajs-515	39	1	this	this	PRON
iajs-515	39	2	is	be	AUX
iajs-515	39	3	in	in	ADP
iajs-515	39	4	good	good	ADJ
iajs-515	39	5	agreement	agreement	NOUN
iajs-515	39	6	with	with	ADP
iajs-515	39	7	[	[	X
iajs-515	39	8	7,8	7,8	NUM
iajs-515	39	9	]	]	PUNCT
iajs-515	39	10	.	.	PUNCT
iajs-515	40	1	from	from	ADP
iajs-515	40	2	this	this	DET
iajs-515	40	3	figure	figure	NOUN
iajs-515	40	4	the	the	DET
iajs-515	40	5	current	current	ADJ
iajs-515	40	6	increases	increase	NOUN
iajs-515	40	7	slightly	slightly	ADV
iajs-515	40	8	with	with	ADP
iajs-515	40	9	the	the	DET
iajs-515	40	10	increase	increase	NOUN
iajs-515	40	11	of	of	ADP
iajs-515	40	12	the	the	DET
iajs-515	40	13	annealing	anneal	VERB
iajs-515	40	14	temperature	temperature	NOUN
iajs-515	40	15	because	because	SCONJ
iajs-515	40	16	increasing	increase	VERB
iajs-515	40	17	temperatures	temperature	NOUN
iajs-515	40	18	cause	cause	VERB
iajs-515	40	19	a	a	DET
iajs-515	40	20	rearrangement	rearrangement	NOUN
iajs-515	40	21	of	of	ADP
iajs-515	40	22	the	the	DET
iajs-515	40	23	interface	interface	NOUN
iajs-515	40	24	atoms	atom	NOUN
iajs-515	40	25	and	and	CCONJ
iajs-515	40	26	reduce	reduce	VERB
iajs-515	40	27	surface	surface	NOUN
iajs-515	40	28	states	state	NOUN
iajs-515	40	29	and	and	CCONJ
iajs-515	40	30	dislocalized	dislocalize	VERB
iajs-515	40	31	at	at	ADP
iajs-515	40	32	interface	interface	NOUN
iajs-515	40	33	layer	layer	NOUN
iajs-515	40	34	between	between	ADP
iajs-515	40	35	a	a	DET
iajs-515	40	36	-	-	PUNCT
iajs-515	40	37	sb	sb	NOUN
iajs-515	40	38	and	and	CCONJ
iajs-515	40	39	c	c	PROPN
iajs-515	40	40	-	-	PUNCT
iajs-515	40	41	si	si	X
iajs-515	40	42	which	which	PRON
iajs-515	40	43	leads	lead	VERB
iajs-515	40	44	to	to	ADP
iajs-515	40	45	the	the	DET
iajs-515	40	46	improvement	improvement	NOUN
iajs-515	40	47	of	of	ADP
iajs-515	40	48	the	the	DET
iajs-515	40	49	junctions	junction	NOUN
iajs-515	40	50	characteristics	characteristic	NOUN
iajs-515	40	51	.	.	PUNCT
iajs-515	41	1	this	this	PRON
iajs-515	41	2	was	be	AUX
iajs-515	41	3	in	in	ADP
iajs-515	41	4	agreement	agreement	NOUN
iajs-515	41	5	with	with	ADP
iajs-515	41	6	[	[	X
iajs-515	41	7	9,1	9,1	PRON
iajs-515	41	8	]	]	X
iajs-515	41	9	.	.	PUNCT
iajs-515	42	1	also	also	ADV
iajs-515	42	2	we	we	PRON
iajs-515	42	3	can	can	AUX
iajs-515	42	4	notice	notice	VERB
iajs-515	42	5	form	form	NOUN
iajs-515	42	6	table	table	NOUN
iajs-515	42	7	(	(	PUNCT
iajs-515	42	8	2	2	NUM
iajs-515	42	9	)	)	PUNCT
iajs-515	42	10	that	that	SCONJ
iajs-515	42	11	the	the	DET
iajs-515	42	12	value	value	NOUN
iajs-515	42	13	of	of	ADP
iajs-515	42	14	the	the	DET
iajs-515	42	15	ideality	ideality	NOUN
iajs-515	42	16	factor	factor	NOUN
iajs-515	42	17	and	and	CCONJ
iajs-515	42	18	saturation	saturation	NOUN
iajs-515	42	19	current	current	ADJ
iajs-515	42	20	decreases	decrease	NOUN
iajs-515	42	21	but	but	CCONJ
iajs-515	42	22	potential	potential	ADJ
iajs-515	42	23	barrier	barrier	NOUN
iajs-515	42	24	height	height	NOUN
iajs-515	42	25	increases	increase	NOUN
iajs-515	42	26	with	with	ADP
iajs-515	42	27	the	the	DET
iajs-515	42	28	increase	increase	NOUN
iajs-515	42	29	of	of	ADP
iajs-515	42	30	annealing	anneal	VERB
iajs-515	42	31	temperature	temperature	NOUN
iajs-515	42	32	.	.	PUNCT
iajs-515	43	1	this	this	DET
iajs-515	43	2	behavior	behavior	NOUN
iajs-515	43	3	attributed	attribute	VERB
iajs-515	43	4	to	to	ADP
iajs-515	43	5	reduction	reduction	NOUN
iajs-515	43	6	of	of	ADP
iajs-515	43	7	dangling	dangle	VERB
iajs-515	43	8	bonds	bond	NOUN
iajs-515	43	9	as	as	ADV
iajs-515	43	10	well	well	ADV
iajs-515	43	11	as	as	ADP
iajs-515	43	12	the	the	DET
iajs-515	43	13	density	density	NOUN
iajs-515	43	14	of	of	ADP
iajs-515	43	15	states	state	NOUN
iajs-515	43	16	in	in	ADP
iajs-515	43	17	sb	sb	PROPN
iajs-515	43	18	.	.	PROPN
iajs-515	43	19	conclusions	conclusion	VERB
iajs-515	43	20	the	the	DET
iajs-515	43	21	structural	structural	ADJ
iajs-515	43	22	nature	nature	NOUN
iajs-515	43	23	of	of	ADP
iajs-515	43	24	the	the	DET
iajs-515	43	25	sb	sb	PROPN
iajs-515	43	26	is	be	AUX
iajs-515	43	27	polycrystalline	polycrystalline	ADJ
iajs-515	43	28	but	but	CCONJ
iajs-515	43	29	after	after	SCONJ
iajs-515	43	30	the	the	DET
iajs-515	43	31	annealing	annealing	NOUN
iajs-515	43	32	process	process	NOUN
iajs-515	43	33	crystallization	crystallization	NOUN
iajs-515	43	34	of	of	ADP
iajs-515	43	35	sb	sb	PROPN
iajs-515	43	36	films	film	NOUN
iajs-515	43	37	increases	increase	VERB
iajs-515	43	38	because	because	SCONJ
iajs-515	43	39	of	of	ADP
iajs-515	43	40	the	the	DET
iajs-515	43	41	decrease	decrease	NOUN
iajs-515	43	42	of	of	ADP
iajs-515	43	43	the	the	DET
iajs-515	43	44	dangling	dangle	VERB
iajs-515	43	45	bond	bond	NOUN
iajs-515	43	46	.	.	PUNCT
iajs-515	44	1	the	the	DET
iajs-515	44	2	current	current	ADJ
iajs-515	44	3	-	-	PUNCT
iajs-515	44	4	voltage	voltage	NOUN
iajs-515	44	5	measurements	measurement	NOUN
iajs-515	44	6	of	of	ADP
iajs-515	44	7	sb	sb	PROPN
iajs-515	44	8	/	/	SYM
iajs-515	44	9	c	c	PROPN
iajs-515	44	10	-	-	PUNCT
iajs-515	44	11	si	si	NOUN
iajs-515	44	12	heterojunction	heterojunction	NOUN
iajs-515	44	13	case	case	NOUN
iajs-515	44	14	the	the	DET
iajs-515	44	15	value	value	NOUN
iajs-515	44	16	of	of	ADP
iajs-515	44	17	ideality	ideality	NOUN
iajs-515	44	18	factor	factor	NOUN
iajs-515	44	19	decreases	decrease	VERB
iajs-515	44	20	with	with	ADP
iajs-515	44	21	the	the	DET
iajs-515	44	22	increase	increase	NOUN
iajs-515	44	23	of	of	ADP
iajs-515	44	24	annealing	anneal	VERB
iajs-515	44	25	temperatures	temperature	NOUN
iajs-515	44	26	but	but	CCONJ
iajs-515	44	27	potential	potential	ADJ
iajs-515	44	28	barrier	barrier	NOUN
iajs-515	44	29	height	height	NOUN
iajs-515	44	30	increases	increase	NOUN
iajs-515	44	31	with	with	ADP
iajs-515	44	32	the	the	DET
iajs-515	44	33	increase	increase	NOUN
iajs-515	44	34	of	of	ADP
iajs-515	44	35	annealing	anneal	VERB
iajs-515	44	36	temperature	temperature	NOUN
iajs-515	44	37	,	,	PUNCT
iajs-515	44	38	this	this	DET
iajs-515	44	39	behavior	behavior	NOUN
iajs-515	44	40	is	be	AUX
iajs-515	44	41	attributed	attribute	VERB
iajs-515	44	42	to	to	ADP
iajs-515	44	43	reduction	reduction	NOUN
iajs-515	44	44	of	of	ADP
iajs-515	44	45	dangling	dangle	VERB
iajs-515	44	46	bonds	bond	NOUN
iajs-515	44	47	as	as	ADV
iajs-515	44	48	well	well	ADV
iajs-515	44	49	as	as	ADP
iajs-515	44	50	the	the	DET
iajs-515	44	51	density	density	NOUN
iajs-515	44	52	of	of	ADP
iajs-515	44	53	states(defects	states(defect	NOUN
iajs-515	44	54	)	)	PUNCT
iajs-515	44	55	in	in	ADP
iajs-515	44	56	sb	sb	PROPN
iajs-515	44	57	.	.	PROPN
iajs-515	44	58	references	reference	NOUN
iajs-515	44	59	1	1	NUM
iajs-515	44	60	-	-	PUNCT
iajs-515	44	61	gong	gong	NOUN
iajs-515	44	62	,	,	PUNCT
iajs-515	44	63	s.	s.	PROPN
iajs-515	44	64	;	;	PUNCT
iajs-515	44	65	robertsson	robertsson	PROPN
iajs-515	44	66	.h.hentzell	.h.hentzell	PROPN
iajs-515	44	67	,	,	PUNCT
iajs-515	44	68	hultman	hultman	ADJ
iajs-515	44	69	.l	.l	PROPN
iajs-515	44	70	.	.	PUNCT
iajs-515	45	1	;	;	PUNCT
iajs-515	45	2	hornstzirom	hornstzirom	ADP
iajs-515	45	3	.s	.s	NOUN
iajs-515	45	4	,	,	PUNCT
iajs-515	45	5	and	and	CCONJ
iajs-515	45	6	radnoczi	radnoczi	NOUN
iajs-515	45	7	,	,	PUNCT
iajs-515	45	8	g.(1987	g.(1987	PROPN
iajs-515	45	9	)	)	PUNCT
iajs-515	45	10	,	,	PUNCT
iajs-515	45	11	alsb	alsb	PROPN
iajs-515	45	12	doped	dope	VERB
iajs-515	45	13	polycrystalline	polycrystalline	NOUN
iajs-515	45	14	si	si	X
iajs-515	45	15	by	by	ADP
iajs-515	45	16	the	the	DET
iajs-515	45	17	metal	metal	NOUN
iajs-515	45	18	-	-	PUNCT
iajs-515	45	19	induced	induce	VERB
iajs-515	45	20	crystallization	crystallization	NOUN
iajs-515	45	21	,	,	PUNCT
iajs-515	45	22	j.appl.phys	j.appl.phy	NOUN
iajs-515	45	23	,	,	PUNCT
iajs-515	45	24	62	62	NUM
iajs-515	45	25	(	(	PUNCT
iajs-515	45	26	9	9	NUM
iajs-515	45	27	):	):	PUNCT
iajs-515	45	28	3726	3726	NUM
iajs-515	45	29	-	-	SYM
iajs-515	45	30	3727	3727	NUM
iajs-515	45	31	.	.	PUNCT
iajs-515	46	1	2youngkim	2youngkim	NUM
iajs-515	46	2	,	,	PUNCT
iajs-515	46	3	r.	r.	PROPN
iajs-515	46	4	and	and	CCONJ
iajs-515	46	5	gikim	gikim	PROPN
iajs-515	46	6	,	,	PUNCT
iajs-515	46	7	h	h	NOUN
iajs-515	46	8	.(2007	.(2007	NUM
iajs-515	46	9	)	)	PUNCT
iajs-515	46	10	,	,	PUNCT
iajs-515	46	11	the	the	DET
iajs-515	46	12	deposition	deposition	NOUN
iajs-515	46	13	of	of	ADP
iajs-515	46	14	sb	sb	PROPN
iajs-515	46	15	/	/	SYM
iajs-515	46	16	ge	ge	PROPN
iajs-515	46	17	films	film	NOUN
iajs-515	46	18	by	by	ADP
iajs-515	46	19	metal	metal	NOUN
iajs-515	46	20	organic	organic	ADJ
iajs-515	46	21	chemical	chemical	NOUN
iajs-515	46	22	vapor	vapor	NOUN
iajs-515	46	23	deposition	deposition	NOUN
iajs-515	46	24	,	,	PUNCT
iajs-515	46	25	j.of	j.of	VERB
iajs-515	46	26	appl.phys,102	appl.phys,102	PRON
iajs-515	46	27	,	,	PUNCT
iajs-515	46	28	083531,1	083531,1	NOUN
iajs-515	46	29	-	-	PUNCT
iajs-515	46	30	4	4	NUM
iajs-515	46	31	.	.	X
iajs-515	47	1	3sze	3sze	NUM
iajs-515	47	2	,	,	PUNCT
iajs-515	47	3	s.	s.	PROPN
iajs-515	47	4	m.	m.	PROPN
iajs-515	47	5	(	(	PUNCT
iajs-515	47	6	2001	2001	NUM
iajs-515	47	7	)	)	PUNCT
iajs-515	47	8	,	,	PUNCT
iajs-515	47	9	semiconductor	semiconductor	NOUN
iajs-515	47	10	devices	device	NOUN
iajs-515	47	11	:	:	PUNCT
iajs-515	47	12	physics	physics	NOUN
iajs-515	47	13	and	and	CCONJ
iajs-515	47	14	technology	technology	NOUN
iajs-515	47	15	.	.	PUNCT
iajs-515	48	1	2nd	2nd	ADJ
iajs-515	48	2	ed	ed	NOUN
iajs-515	48	3	.	.	PUNCT
iajs-515	49	1	new	new	PROPN
iajs-515	49	2	york	york	PROPN
iajs-515	49	3	:	:	PUNCT
iajs-515	50	1	john	john	PROPN
iajs-515	50	2	wiley	wiley	PROPN
iajs-515	50	3	and	and	CCONJ
iajs-515	50	4	sons	son	NOUN
iajs-515	50	5	,	,	PUNCT
iajs-515	50	6	unipolar	unipolar	ADJ
iajs-515	50	7	devices	device	NOUN
iajs-515	50	8	,	,	PUNCT
iajs-515	50	9	221	221	NUM
iajs-515	50	10	-	-	SYM
iajs-515	50	11	222	222	NUM
iajs-515	50	12	.	.	PUNCT
iajs-515	51	1	4milnes	4milne	NOUN
iajs-515	51	2	,	,	PUNCT
iajs-515	51	3	a.g.and	a.g.and	PROPN
iajs-515	51	4	feucht	feucht	PROPN
iajs-515	51	5	.d.l	.d.l	PROPN
iajs-515	51	6	,	,	PUNCT
iajs-515	51	7	(	(	PUNCT
iajs-515	51	8	1972	1972	NUM
iajs-515	51	9	)	)	PUNCT
iajs-515	51	10	,	,	PUNCT
iajs-515	51	11	heterojunction	heterojunction	NOUN
iajs-515	51	12	and	and	CCONJ
iajs-515	51	13	metal	metal	NOUN
iajs-515	51	14	-	-	PUNCT
iajs-515	51	15	semiconductors	semiconductor	NOUN
iajs-515	51	16	junctions	junction	NOUN
iajs-515	51	17	,	,	PUNCT
iajs-515	51	18	academic	academic	ADJ
iajs-515	51	19	press	press	NOUN
iajs-515	51	20	,	,	PUNCT
iajs-515	51	21	newyork	newyork	NOUN
iajs-515	51	22	and	and	CCONJ
iajs-515	51	23	london	london	PROPN
iajs-515	51	24	.	.	PUNCT
iajs-515	52	1	5wang	5wang	NUM
iajs-515	52	2	,	,	PUNCT
iajs-515	52	3	y.	y.	PROPN
iajs-515	52	4	;	;	PUNCT
iajs-515	52	5	biest	bi	ADJ
iajs-515	52	6	,	,	PUNCT
iajs-515	52	7	o.	o.	PROPN
iajs-515	52	8	;	;	PUNCT
iajs-515	52	9	leuven	leuven	NOUN
iajs-515	52	10	,	,	PUNCT
iajs-515	52	11	k.	k.	PROPN
iajs-515	52	12	;	;	PUNCT
iajs-515	52	13	arenberg	arenberg	PROPN
iajs-515	52	14	and	and	CCONJ
iajs-515	52	15	gordon	gordon	PROPN
iajs-515	52	16	,	,	PUNCT
iajs-515	52	17	(	(	PUNCT
iajs-515	52	18	2005	2005	NUM
iajs-515	52	19	)	)	PUNCT
iajs-515	52	20	,	,	PUNCT
iajs-515	52	21	20th	20th	PROPN
iajs-515	52	22	europea	europea	X
iajs-515	52	23	photovoltaic	photovoltaic	PROPN
iajs-515	52	24	solar	solar	ADJ
iajs-515	52	25	energy	energy	NOUN
iajs-515	52	26	conference	conference	NOUN
iajs-515	52	27	,	,	PUNCT
iajs-515	52	28	1179	1179	NUM
iajs-515	52	29	-	-	SYM
iajs-515	52	30	1181	1181	NUM
iajs-515	52	31	.	.	PUNCT
iajs-515	53	1	6fang	6fang	NUM
iajs-515	53	2	,	,	PUNCT
iajs-515	53	3	y.k	y.k	PROPN
iajs-515	53	4	.	.	PROPN
iajs-515	53	5	yang	yang	PROPN
iajs-515	53	6	.	.	PUNCT
iajs-515	54	1	(	(	PUNCT
iajs-515	54	2	1989	1989	NUM
iajs-515	54	3	)	)	PUNCT
iajs-515	54	4	,	,	PUNCT
iajs-515	54	5	the	the	DET
iajs-515	54	6	effect	effect	NOUN
iajs-515	54	7	of	of	ADP
iajs-515	54	8	heat	heat	NOUN
iajs-515	54	9	temperature	temperature	NOUN
iajs-515	54	10	on	on	ADP
iajs-515	54	11	the	the	DET
iajs-515	54	12	electrical	electrical	ADJ
iajs-515	54	13	resistivity	resistivity	NOUN
iajs-515	54	14	of	of	ADP
iajs-515	54	15	sb	sb	PROPN
iajs-515	54	16	deposited	deposit	VERB
iajs-515	54	17	by	by	ADP
iajs-515	54	18	means	mean	NOUN
iajs-515	54	19	of	of	ADP
iajs-515	54	20	molecular	molecular	ADJ
iajs-515	54	21	beam	beam	NOUN
iajs-515	54	22	on	on	ADP
iajs-515	54	23	si	si	PROPN
iajs-515	54	24	,	,	PUNCT
iajs-515	54	25	thin	thin	ADJ
iajs-515	54	26	solid	solid	ADJ
iajs-515	54	27	films	film	NOUN
iajs-515	54	28	,	,	PUNCT
iajs-515	54	29	176	176	NUM
iajs-515	54	30	,	,	PUNCT
iajs-515	54	31	(	(	PUNCT
iajs-515	54	32	1	1	NUM
iajs-515	54	33	)	)	PUNCT
iajs-515	54	34	,	,	PUNCT
iajs-515	54	35	91	91	NUM
iajs-515	54	36	-	-	SYM
iajs-515	54	37	97	97	NUM
iajs-515	54	38	.	.	PUNCT
iajs-515	55	1	7ahssan	7ahssan	NUM
iajs-515	55	2	,	,	PUNCT
iajs-515	55	3	h.s	h.s	PROPN
iajs-515	55	4	.	.	PROPN
iajs-515	55	5	(	(	PUNCT
iajs-515	55	6	2009	2009	NUM
iajs-515	55	7	)	)	PUNCT
iajs-515	55	8	,	,	PUNCT
iajs-515	55	9	electronic	electronic	ADJ
iajs-515	55	10	transport	transport	NOUN
iajs-515	55	11	mechanicm	mechanicm	NOUN
iajs-515	55	12	of	of	ADP
iajs-515	55	13	se	se	X
iajs-515	55	14	/	/	SYM
iajs-515	55	15	c	c	X
iajs-515	55	16	-	-	PUNCT
iajs-515	55	17	si	si	X
iajs-515	55	18	diode	diode	NOUN
iajs-515	55	19	,	,	PUNCT
iajs-515	55	20	m.sc	m.sc	PROPN
iajs-515	55	21	.	.	PUNCT
iajs-515	56	1	thesis	thesis	PROPN
iajs-515	56	2	,	,	PUNCT
iajs-515	56	3	baghdad	baghdad	PROPN
iajs-515	56	4	univ	univ	PROPN
iajs-515	56	5	.	.	PUNCT
iajs-515	57	1	8	8	NUM
iajs-515	57	2	-	-	PUNCT
iajs-515	57	3	sinha	sinha	NOUN
iajs-515	57	4	,	,	PUNCT
iajs-515	57	5	n.p	n.p	PROPN
iajs-515	57	6	.	.	PROPN
iajs-515	57	7	and	and	CCONJ
iajs-515	57	8	mirsa	mirsa	PROPN
iajs-515	57	9	,	,	PUNCT
iajs-515	57	10	m.	m.	NOUN
iajs-515	57	11	(	(	PUNCT
iajs-515	57	12	1983),electrical	1983),electrical	NUM
iajs-515	57	13	properties	property	NOUN
iajs-515	57	14	of	of	ADP
iajs-515	57	15	si	si	NOUN
iajs-515	57	16	films	film	NOUN
iajs-515	57	17	doped	dope	VERB
iajs-515	57	18	sb	sb	PROPN
iajs-515	57	19	by	by	ADP
iajs-515	57	20	molecular	molecular	ADJ
iajs-515	57	21	beam	beam	NOUN
iajs-515	57	22	epitaxy	epitaxy	PROPN
iajs-515	57	23	,	,	PUNCT
iajs-515	57	24	solid	solid	ADJ
iajs-515	57	25	-	-	PUNCT
iajs-515	57	26	state	state	NOUN
iajs-515	57	27	electronics,26	electronics,26	NOUN
iajs-515	57	28	(	(	PUNCT
iajs-515	57	29	12):1170	12):1170	NUM
iajs-515	57	30	–	–	SYM
iajs-515	57	31	1180	1180	NUM
iajs-515	57	32	.	.	PUNCT
iajs-515	58	1	9hobart	9hobart	NUM
iajs-515	58	2	,	,	PUNCT
iajs-515	58	3	k.	k.	PROPN
iajs-515	58	4	godbey	godbey	PROPN
iajs-515	58	5	.	.	PUNCT
iajs-515	59	1	d	d	PROPN
iajs-515	59	2	and	and	CCONJ
iajs-515	59	3	thompson	thompson	PROPN
iajs-515	59	4	,	,	PUNCT
iajs-515	59	5	(	(	PUNCT
iajs-515	59	6	1992	1992	NUM
iajs-515	59	7	)	)	PUNCT
iajs-515	59	8	,	,	PUNCT
iajs-515	59	9	post	post	ADJ
iajs-515	59	10	-	-	ADJ
iajs-515	59	11	growth	growth	ADJ
iajs-515	59	12	annealing	annealing	NOUN
iajs-515	59	13	of	of	ADP
iajs-515	59	14	low	low	ADJ
iajs-515	59	15	temperature	temperature	NOUN
iajs-515	59	16	-	-	PUNCT
iajs-515	59	17	grown	grow	VERB
iajs-515	59	18	sb	sb	NOUN
iajs-515	59	19	-	-	ADJ
iajs-515	59	20	doped	dope	VERB
iajs-515	59	21	si	si	X
iajs-515	59	22	molecular	molecular	ADJ
iajs-515	59	23	beam	beam	NOUN
iajs-515	59	24	epitaxial	epitaxial	ADJ
iajs-515	59	25	films	film	NOUN
iajs-515	59	26	,	,	PUNCT
iajs-515	59	27	appl.phys.lett	appl.phys.lett	PROPN
iajs-515	59	28	,	,	PUNCT
iajs-515	59	29	61(1):76	61(1):76	NOUN
iajs-515	59	30	-	-	SYM
iajs-515	59	31	78	78	NUM
iajs-515	59	32	155	155	NUM
iajs-515	59	33	|	|	NOUN
iajs-515	59	34	physics	physics	NOUN
iajs-515	59	35	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	@1a@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@úó‘ój	PROPN
iajs-515	59	36	�	�	PROPN
iajs-515	59	37	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	n€a@î@úœäñ€a@‚ï‹»‹€@·ró	NUM
iajs-515	59	38	:	:	PUNCT
iajs-515	59	39	a@âig@ú‹	a@âig@ú‹	PROPN
iajs-515	59	40	©	©	PROPN
iajs-515	59	41	@ü‹26@@öü»€a@i1@‚b«@h2013	@ü‹26@@öü»€a@i1@‚b«@h2013	PROPN
iajs-515	59	42	ibn	ibn	PROPN
iajs-515	59	43	al	al	PROPN
iajs-515	59	44	-	-	PUNCT
iajs-515	59	45	haitham	haitham	PROPN
iajs-515	59	46	jour	jour	X
iajs-515	59	47	.	.	PROPN
iajs-515	60	1	for	for	ADP
iajs-515	60	2	pure	pure	ADJ
iajs-515	60	3	&	&	CCONJ
iajs-515	60	4	appl	appl	PROPN
iajs-515	60	5	.	.	PUNCT
iajs-515	61	1	sci	sci	PROPN
iajs-515	61	2	.	.	PUNCT
iajs-515	61	3	vol	vol	NOUN
iajs-515	61	4	.	.	PROPN
iajs-515	62	1	26	26	NUM
iajs-515	62	2	(	(	PUNCT
iajs-515	62	3	1	1	NUM
iajs-515	62	4	)	)	PUNCT
iajs-515	62	5	2013	2013	NUM
iajs-515	62	6	table	table	NOUN
iajs-515	62	7	(	(	PUNCT
iajs-515	62	8	1	1	NUM
iajs-515	62	9	):	):	PUNCT
iajs-515	62	10	the	the	DET
iajs-515	62	11	structural	structural	ADJ
iajs-515	62	12	parameters	parameter	NOUN
iajs-515	62	13	of	of	ADP
iajs-515	62	14	sb	sb	PROPN
iajs-515	62	15	film	film	PROPN
iajs-515	62	16	ta	ta	PROPN
iajs-515	62	17	(	(	PUNCT
iajs-515	62	18	k	k	NOUN
iajs-515	62	19	)	)	PUNCT
iajs-515	62	20	2θ	2θ	NUM
iajs-515	62	21	d	d	NOUN
iajs-515	62	22	(	(	PUNCT
iajs-515	62	23	å)exp	å)exp	PROPN
iajs-515	62	24	d(å)std	d(å)std	PROPN
iajs-515	62	25	.	.	PUNCT
iajs-515	63	1	hkl	hkl	PROPN
iajs-515	63	2	rt	rt	PROPN
iajs-515	63	3	23.709	23.709	NUM
iajs-515	63	4	3.749	3.749	NUM
iajs-515	63	5	3.753	3.753	NUM
iajs-515	63	6	(	(	PUNCT
iajs-515	63	7	003	003	NUM
iajs-515	63	8	)	)	PUNCT
iajs-515	63	9	42.08	42.08	NUM
iajs-515	63	10	2.145	2.145	NUM
iajs-515	63	11	2.152	2.152	NUM
iajs-515	63	12	(	(	PUNCT
iajs-515	63	13	110	110	NUM
iajs-515	63	14	)	)	PUNCT
iajs-515	63	15	48.479	48.479	NUM
iajs-515	63	16	1.876	1.876	NUM
iajs-515	63	17	1.87	1.87	NUM
iajs-515	63	18	(	(	PUNCT
iajs-515	63	19	006	006	NUM
iajs-515	63	20	)	)	PUNCT
iajs-515	63	21	473	473	NUM
iajs-515	63	22	23.673	23.673	NUM
iajs-515	63	23	3.755	3.755	NUM
iajs-515	63	24	3.753	3.753	NUM
iajs-515	63	25	(	(	PUNCT
iajs-515	63	26	003	003	NUM
iajs-515	63	27	)	)	PUNCT
iajs-515	63	28	42.003	42.003	NUM
iajs-515	63	29	2.149	2.149	NUM
iajs-515	63	30	2.152	2.152	NUM
iajs-515	63	31	(	(	PUNCT
iajs-515	63	32	110	110	NUM
iajs-515	63	33	)	)	PUNCT
iajs-515	63	34	48.487	48.487	NUM
iajs-515	63	35	1.876	1.876	NUM
iajs-515	63	36	1.87	1.87	NUM
iajs-515	63	37	(	(	PUNCT
iajs-515	63	38	006	006	NUM
iajs-515	63	39	)	)	PUNCT
iajs-515	63	40	table	table	NOUN
iajs-515	63	41	(	(	PUNCT
iajs-515	63	42	2	2	NUM
iajs-515	63	43	):	):	PUNCT
iajs-515	63	44	values	value	NOUN
iajs-515	63	45	of	of	ADP
iajs-515	63	46	ideality	ideality	NOUN
iajs-515	63	47	factor	factor	NOUN
iajs-515	63	48	(	(	PUNCT
iajs-515	63	49	β	β	NOUN
iajs-515	63	50	)	)	PUNCT
iajs-515	63	51	,	,	PUNCT
iajs-515	63	52	saturation	saturation	NOUN
iajs-515	63	53	current	current	NOUN
iajs-515	63	54	(	(	PUNCT
iajs-515	63	55	is	be	AUX
iajs-515	63	56	)	)	PUNCT
iajs-515	63	57	and	and	CCONJ
iajs-515	63	58	potential	potential	ADJ
iajs-515	63	59	barrier	barrier	NOUN
iajs-515	63	60	height	height	NOUN
iajs-515	63	61	(	(	PUNCT
iajs-515	63	62	фb	фb	NOUN
iajs-515	63	63	)	)	PUNCT
iajs-515	63	64	for	for	ADP
iajs-515	63	65	sb	sb	PROPN
iajs-515	63	66	/	/	SYM
iajs-515	63	67	c	c	PROPN
iajs-515	63	68	-	-	PUNCT
iajs-515	63	69	si	si	X
iajs-515	63	70	hetero	hetero	NOUN
iajs-515	63	71	junction	junction	NOUN
iajs-515	63	72	with	with	ADP
iajs-515	63	73	thickness	thickness	NOUN
iajs-515	63	74	0.25μm	0.25μm	X
iajs-515	63	75	and	and	CCONJ
iajs-515	63	76	annealing	anneal	VERB
iajs-515	63	77	temperatures	temperature	NOUN
iajs-515	63	78	(	(	PUNCT
iajs-515	63	79	rt	rt	PROPN
iajs-515	63	80	,	,	PUNCT
iajs-515	63	81	473k	473k	PROPN
iajs-515	63	82	)	)	PUNCT
iajs-515	63	83	.	.	PUNCT
iajs-515	64	1	fig	fig	NOUN
iajs-515	64	2	.	.	PUNCT
iajs-515	65	1	(	(	PUNCT
iajs-515	65	2	1	1	NUM
iajs-515	65	3	):	):	PUNCT
iajs-515	65	4	xrd	xrd	NOUN
iajs-515	65	5	of	of	ADP
iajs-515	65	6	sb	sb	PROPN
iajs-515	65	7	with	with	ADP
iajs-515	65	8	different	different	ADJ
iajs-515	65	9	annealing	anneal	VERB
iajs-515	65	10	temperatures	temperature	NOUN
iajs-515	65	11	(	(	PUNCT
iajs-515	65	12	a):as	a):as	PROPN
iajs-515	65	13	deposited(303k	deposited(303k	NOUN
iajs-515	65	14	)	)	PUNCT
iajs-515	65	15	(	(	PUNCT
iajs-515	65	16	b):ta=473k	b):ta=473k	NOUN
iajs-515	65	17	thickness	thickness	NOUN
iajs-515	65	18	(	(	PUNCT
iajs-515	65	19	µm	µm	NOUN
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iajs-515	69	30	rt,473k	rt,473k	NOUN
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iajs-515	77	18	رقائق	رقائق	PROPN
iajs-515	77	19	من	من	PRON
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iajs-515	79	3	وفسر	وفسر	PROPN
iajs-515	79	4	ذلك	ذلك	PROPN
iajs-515	79	5	لعدم	لعدم	PROPN
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iajs-515	80	3	c	c	PROPN
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iajs-515	81	16	،	،	X
iajs-515	81	17	(	(	PUNCT
iajs-515	81	18	sb	sb	NOUN
iajs-515	81	19	/	/	SYM
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iajs-515	81	25	المفتاحیة	المفتاحیة	ADJ
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iajs-515	82	1	|	|	NOUN
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